Packaging structure and manufacturing method thereof

Abstract

The present invention provides a packaging structure and a manufacturing method thereof, wherein the packaging structure includes a circuit board and a heating element. The circuit board includes a multi-layer circuit layer and a composite material layer. The thermal conductivity of the composite material layer is between 450W / mK and 700W / mK. The heating element is arranged on the circuit board and electrically connected to the circuit layer. The heat generated by the heating element is transferred to the outside through the composite material layer. The packaging structure of the present invention conducts the heat generated by the heating element to the outside in a horizontal direction through a composite material layer having a thermal conductivity greater than that of copper (400W / mK). Therefore, in addition to being able to conduct heat more quickly, it can also have better heat dissipation efficiency.

Description

Technical Field

[0001] The present invention relates to a semiconductor structure and a manufacturing method thereof, and in particular to a packaging structure and a manufacturing method thereof. Background Art

[0002] In ELIC (Every Layer Interconnection Count) circuit board structures, circuit layers struggle to achieve effective heat dissipation or thermal conductivity. To address this issue, current methods include: 1.) copper electroplating to form thermal pads, bars, and x-vias; 2.) embedded copper blocks; and 3.) metal cores to conduct heat vertically (i.e., in the Z direction). However, using electroplated copper to form thermal pads, bars, and x-vias limits the size of the heat conduction path. Furthermore, embedded copper blocks conduct heat vertically through the copper blocks, making them unsuitable for structures with very thin interlayers. Furthermore, while using metal as the core layer material allows for horizontal heat transfer, it also requires blind vias to conduct the heat source to the underlying metal core, representing indirect contact heat transfer. This means that in multilayer boards, the vertical heat transfer path is blocked by other layers, preventing widespread external contact. Consequently, the heat source is confined to the center of the board, resulting in limited heat dissipation. Summary of the Invention

[0003] The present invention is directed to a packaging structure with better heat conduction effect.

[0004] The present invention also provides a method for manufacturing a packaging structure, which is used to manufacture the above-mentioned packaging structure and can have a better heat conduction effect.

[0005] According to an embodiment of the present invention, a package structure includes a circuit board and a heating element. The circuit board includes multiple circuit layers and a composite material layer. The thermal conductivity of the composite material layer is between 450 W / mK and 700 W / mK. The heating element is disposed on the circuit board and electrically connected to the circuit layer. Heat generated by the heating element is transferred to the outside world through the composite material layer.

[0006] In the packaging structure according to an embodiment of the present invention, the composite material layer includes a first material and a second material, wherein the thermal conductivity of the first material is greater than the thermal conductivity of the second material.

[0007] In the packaging structure according to the embodiment of the present invention, the first material is graphene, and the second material is copper.

[0008] In the packaging structure according to an embodiment of the present invention, the above-mentioned multi-layer circuit layer includes an inner circuit layer, at least one first build-up circuit layer and at least one second build-up circuit layer. The circuit board includes a core substrate, a first build-up structure and a second build-up structure. The core substrate includes a core layer, a composite material layer and an inner circuit layer. The composite material layer and the inner circuit layer are respectively located on opposite sides of the core layer. The first build-up structure is configured on one side of the core substrate and includes at least one first dielectric layer, at least one first build-up circuit layer and an opening. The first dielectric layer is located between the first build-up circuit layer and the composite material layer. The opening extends from the first build-up circuit layer to the composite material layer and exposes a portion of the composite material layer. The heating element is configured in the opening. The second build-up structure is configured on the other side of the core substrate and includes at least one second dielectric layer and a second build-up circuit layer. The second dielectric layer is located between the second build-up circuit layer and the inner circuit layer.

[0009] In the packaging structure according to an embodiment of the present invention, the above-mentioned packaging structure also includes an insulating adhesive layer and an electrical connection layer. The insulating adhesive layer is arranged between the opening and the heating element. The heating element has an active surface and a back surface opposite to each other and a surrounding surface connecting the active surface and the back surface, and includes a first electrode and a second electrode located on the active surface. The insulating adhesive layer covers the back surface and the surrounding surface of the heating element. The heating element contacts the composite material layer through the insulating adhesive layer. The electrical connection layer connects the first build-up layer circuit layer and the first electrode of the heating element and connects the first build-up layer circuit layer and the second electrode of the heating element. The electrical connection layer exposes part of the active surface of the heating element and part of the first dielectric layer of the first build-up layer structure.

[0010] In the packaging structure according to an embodiment of the present invention, the above-mentioned packaging structure also includes a conductive through-hole, which penetrates the first dielectric layer of the first build-up layer structure, the core layer of the core substrate and the second dielectric layer of the second build-up layer structure, and electrically connects the first build-up layer circuit layer and the second build-up layer circuit layer.

[0011] In a packaging structure according to an embodiment of the present invention, the heating element has an active surface and a back surface facing each other, and includes a first electrode and a second electrode located on the active surface. The composite material layer includes a first composite material portion and a second composite material portion that are separated from each other. The first electrode is structurally and electrically connected to the first composite material portion. The second electrode is structurally and electrically connected to the second composite material portion.

[0012] In a package structure according to an embodiment of the present invention, the package structure further includes a third build-up structure and a fourth build-up structure. The third build-up structure is disposed on the first build-up structure and electrically connected to the first build-up wiring layer. The fourth build-up structure is disposed on the second build-up structure and electrically connected to the second build-up wiring layer.

[0013] In the packaging structure according to an embodiment of the present invention, the above-mentioned circuit layer includes a first circuit layer, a second circuit layer and a third circuit layer. The circuit board has a through hole and also includes a core substrate, a first build-up layer structure, a second build-up layer structure and a conductive connection layer. The core substrate includes a core dielectric layer and a first circuit layer and a second circuit layer located on opposite sides of the core dielectric layer. The first build-up layer structure is configured on the first circuit layer of the core substrate. The first build-up layer structure includes a first dielectric layer and a composite material layer. The first dielectric layer is located between the composite material layer and the first circuit layer. The second build-up layer structure is configured on the second circuit layer of the core substrate. The second build-up layer structure includes a second dielectric layer and a third circuit layer. The second dielectric layer is located between the second circuit layer and the third circuit layer, and the through hole penetrates the first build-up layer structure, the core substrate and the second build-up layer structure. The conductive connection layer is configured on the inner wall of the through hole and is electrically connected to the composite material layer, the first circuit layer, the second circuit layer and the third circuit layer.

[0014] In the package structure according to an embodiment of the present invention, the package structure further includes a solder mask layer disposed on the circuit board and located between the heating element and the composite material layer. The solder mask layer fills the through hole and covers the conductive connection layer, the composite material layer, and the third circuit layer, while exposing a portion of the composite material layer and a portion of the third circuit layer.

[0015] In a packaging structure according to an embodiment of the present invention, the heating element is disposed on the composite material layer exposed by the solder mask. The heating element has an active surface and a back surface facing each other and includes a first electrode and a second electrode located on the active surface. The composite material layer includes a first composite material portion and a second composite material portion separated from each other. The first electrode is structurally and electrically connected to the first composite material portion, and the second electrode is structurally connected to the second composite material portion.

[0016] According to an embodiment of the present invention, a method for manufacturing a packaging structure includes the following steps: providing a circuit board. The circuit board includes multiple circuit layers and a composite material layer, wherein the thermal conductivity of the composite material layer is between 450 W / mK and 700 W / mK. A heating element is disposed on the circuit board. The heating element is electrically connected to the circuit layer, wherein heat generated by the heating element is transferred to the outside through the composite material layer.

[0017] In the method for manufacturing a package structure according to an embodiment of the present invention, the composite material layer includes a first material and a second material, wherein the thermal conductivity of the first material is greater than the thermal conductivity of the second material.

[0018] In the method for manufacturing a package structure according to an embodiment of the present invention, the first material is graphene, and the second material is copper.

[0019] In the manufacturing method of the packaging structure according to an embodiment of the present invention, the above-mentioned circuit layer includes an inner circuit layer, at least one first build-up circuit layer and at least one second build-up circuit layer. The step of providing a circuit board includes providing a core substrate. The core substrate includes a core layer, a composite material layer and an inner circuit layer. The composite material layer and the inner circuit layer are respectively located on opposite sides of the core layer. A first build-up structure is formed on one side of the core substrate. The first build-up structure includes at least one first dielectric layer and a first build-up circuit layer. The first dielectric layer is located between the first build-up circuit layer and the composite material layer. An opening is formed extending from the first build-up circuit layer to the composite material layer, and a portion of the composite material layer is exposed. A second build-up structure is formed on the other side of the core substrate. The second build-up structure includes at least one second dielectric layer and a second build-up circuit layer. The second dielectric layer is located between the second build-up circuit layer and the inner circuit layer.

[0020] In the method for manufacturing a packaging structure according to an embodiment of the present invention, the method for manufacturing the packaging structure further includes the following steps. After forming the opening and before configuring the heating element on the circuit board, an insulating adhesive layer is provided in the opening. Configure the heating element in the opening. The heating element has an active surface and a back surface opposite to each other and a surrounding surface connecting the active surface and the back surface, and includes a first electrode and a second electrode located on the active surface. The insulating adhesive layer covers the back surface and the surrounding surface of the heating element. The heating element contacts the composite material layer through the insulating adhesive layer. An electrical connection layer is formed to connect the first build-up layer circuit layer and the first electrode of the heating element and to connect the first build-up layer circuit layer and the second electrode of the heating element. The electrical connection layer exposes part of the active surface of the heating element and part of the first dielectric layer of the first build-up layer structure.

[0021] In a method for manufacturing a package structure according to an embodiment of the present invention, the method further includes forming a conductive via extending through the first dielectric layer of the first build-up structure, the core layer of the core substrate, and the second dielectric layer of the second build-up structure. The conductive via electrically connects the first build-up circuit layer and the second build-up circuit layer.

[0022] In a method for manufacturing a packaging structure according to an embodiment of the present invention, the step of configuring a heating element on a circuit board includes: configuring the heating element in an opening. The heating element has an active surface and a back surface facing each other and includes a first electrode and a second electrode located on the active surface. The composite material layer includes a first composite material portion and a second composite material portion that are separated from each other. The first electrode is structurally and electrically connected to the first composite material portion. The second electrode is structurally and electrically connected to the second composite material portion.

[0023] In a method for manufacturing a package structure according to an embodiment of the present invention, the method further includes: after forming the first build-up structure, forming a third build-up structure on the first build-up structure. The third build-up structure is electrically connected to the first build-up wiring layer. After forming the second build-up structure, forming a fourth build-up structure on the second build-up structure. The second build-up structure is electrically connected to the second build-up wiring layer.

[0024] In the manufacturing method of the packaging structure according to an embodiment of the present invention, the above-mentioned circuit layer includes a first circuit layer, a second circuit layer, and a third circuit layer. The step of providing a circuit board includes providing a core substrate. The core substrate includes a core dielectric layer and a first circuit layer and a second circuit layer located on opposite sides of the core dielectric layer. A first build-up layer structure is formed on the first circuit layer of the core substrate. The first build-up layer structure includes a first dielectric layer and a composite material layer. The first dielectric layer is located between the composite material layer and the first circuit layer. A second build-up layer structure is formed on the second circuit layer of the core substrate. The second build-up layer structure includes a second dielectric layer and a third circuit layer. The second dielectric layer is located between the second circuit layer and the third circuit layer. A through hole is formed to penetrate the first build-up layer structure, the core substrate, and the second build-up layer structure. A conductive connection layer is formed on the inner wall of the through hole and electrically connected to the composite material layer, the first circuit layer, the second circuit layer, and the third circuit layer.

[0025] In a method for manufacturing a package structure according to an embodiment of the present invention, the method further includes forming a solder mask layer on the circuit board before placing the heating element on the circuit board. The solder mask layer fills the through hole and covers the conductive connection layer, the composite material layer, and the third circuit layer, while exposing a portion of the composite material layer and a portion of the third circuit layer.

[0026] In the method for manufacturing a packaging structure according to an embodiment of the present invention, the step of configuring a heating element on a circuit board includes configuring the heating element on the composite material layer exposed by the solder mask. The heating element has an active surface and a back surface facing each other and includes a first electrode and a second electrode located on the active surface. The composite material layer includes a first composite material portion and a second composite material portion separated from each other. The first electrode is structurally and electrically connected to the first composite material portion. The second electrode is structurally connected to the second composite material portion.

[0027] Based on the above, in the design of the packaging structure of the present invention, the circuit board includes a composite material layer with a thermal conductivity between 450W / mK and 700W / mK, and the heat generated by the heating element is transferred to the outside world through the composite material layer. In other words, the packaging structure of the present invention conducts the heat generated by the heating element to the outside world in a horizontal direction through the composite material layer with a thermal conductivity greater than that of copper (400W / mK). Therefore, in addition to faster heat dissipation, it also has better heat dissipation efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figures 1A to 1G is a cross-sectional schematic diagram of a method for manufacturing a packaging structure according to an embodiment of the present invention;

[0029] Figures 2A to 2B is a cross-sectional schematic diagram of partial steps of a method for manufacturing a packaging structure according to another embodiment of the present invention;

[0030] Figures 3A to 3E is a cross-sectional schematic diagram of a method for manufacturing a packaging structure according to another embodiment of the present invention;

[0031] Figures 4A to 4D FIG2 is a cross-sectional schematic diagram of a method for manufacturing a packaging structure according to another embodiment of the present invention.

[0032] Description of Reference Numerals

[0033] 100a, 100b, 100c, 100d: packaging structure;

[0034] 110a, 110b, 110c, 110d: circuit boards;

[0035] 111a, 111b, 111d: core layer;

[0036] 112a, 112b, 112c, 112c', 112d, 112d': composite material layer;

[0037] 112c1, 112d1: first composite material portion;

[0038] 112c2, 112d2: second composite material portion;

[0039] 113a1, 113b1, 113c4, 113d1: a first dielectric layer;

[0040] 113a2, 113b2, 113c5, 113d2: second dielectric layer;

[0041] 113a3, 113a4, 113b3, 113b4, 113c1, 113c2, 113c3, 113c6, 113c7: dielectric layer;

[0042] 114a1, 114b1: inner circuit layer;

[0043] 114a2, 114a2', 114b2, 114c4: first build-up circuit layer;

[0044] 114a3, 114b3, 114c5: second build-up circuit layer;

[0045] 114a4, 114a6, 114b4, 114b6, 114c1, 114c2, 114c3, 114c3, 114c3', 114c6, 114c7: circuit layer;

[0046] 114d1: first circuit layer;

[0047] 114d2: second circuit layer;

[0048] 114d3, 114d3': third circuit layer;

[0049] 114a5, 114b5, 114b7, 114b9, 114c8: via holes;

[0050] 115a, 115c: opening;

[0051] 117a1, 117a2, 117b, 117c, 119c1, 119c2, 119c3: conductive through holes;

[0052] 120: insulating rubber layer;

[0053] 130a, 130c, 130d: heating elements;

[0054] 131: active side;

[0055] 132a1, 132c1, 132d1: first electrodes;

[0056] 132a2, 132c2, 132d2: second electrodes;

[0057] 133: back;

[0058] 135: surrounding surface;

[0059] 140: electrical connection layer;

[0060] 150: conductive connecting layer;

[0061] 160: solder mask;

[0062] B11, B11', B12, B13, B14: first build-up structure;

[0063] B21, B22, B23, B24: second build-up structure;

[0064] B31, B32, B33: the third added layer structure;

[0065] B41, B42, B43: fourth build-up structure;

[0066] C1, C2, C3, C4: core substrate;

[0067] T:Through hole. DETAILED DESCRIPTION

[0068] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0069] Figures 1A to 1G 1 is a cross-sectional view of a method for manufacturing a packaging structure according to an embodiment of the present invention. Figure 1A , providing a core substrate C1. The core substrate C1 includes a core layer 111a, a composite material layer 112a, and an inner circuit layer 114a1. The composite material layer 112a and the inner circuit layer 114a1 are respectively located on opposite sides of the core layer 111a. Here, the thermal conductivity of the composite material layer 112a is, for example, between 450W / mK and 700W / mK, wherein the composite material layer 112a includes a first material and a second material, and the thermal conductivity of the first material is greater than the thermal conductivity of the second material. Preferably, the first material is, for example, graphene, and the second material is, for example, copper. In other words, the thermal conductivity of the composite material layer 112a of this embodiment is greater than the thermal conductivity of copper (400W / mK). In addition, the resistivity of the composite material layer 112a (2X 10^-8Ωm) is lower than the resistivity of copper (1.7X 10^-8Ωm), which means that the composite material layer 112a has the ability to conduct electricity. The composite material layer 112a has a coefficient of thermal expansion (CTE) similar to that of copper, approximately 16 ppm / °C to 17 ppm / °C, and a hardness of approximately 71 Hv to 75 Hv. The composite material layer 112a is formed by pulse reverse electrodeposition (PRED).

[0070] Next, please refer to Figure 1BLamination is used to form a first build-up structure B11 and a second build-up structure B21 on opposite sides of a core substrate C1. The first build-up structure B11 includes at least one first dielectric layer (schematically showing a first dielectric layer 113a1) and at least one first build-up circuit layer (schematically showing a first build-up circuit layer 114a2). The first dielectric layer 113a1 is located between the first build-up circuit layer 114a2 and the composite material layer 112a. The second build-up structure B21 includes at least one second dielectric layer (schematically showing a second dielectric layer 113a2), a second build-up circuit layer (schematically showing a second build-up circuit layer 114a3), and at least one conductive via (schematically showing a conductive via 117a1). Second dielectric layer 113a2 is located between second build-up circuit layer 114a3 and inner circuit layer 114a1, and second build-up circuit layer 114a3 is electrically connected to inner circuit layer 114a1 via conductive via 117a1. In other words, the multilayer circuit layer herein includes inner circuit layer 114a1, first build-up circuit layer 114a2, and second build-up circuit layer 114a3. The material of inner circuit layer 114a1, first build-up circuit layer 114a2, and second build-up circuit layer 114a3 is, for example, copper. Thus, a circuit board 110a including multilayer circuit layers and a composite material layer 112a is provided. Preferably, if Figure 1B As shown, the thickness of the composite material layer 112a of this embodiment is greater than the thickness of the inner circuit layer 114a1, the thickness of the first build-up circuit layer 114a2, and the thickness of the second build-up circuit layer 114a3.

[0071] Next, please also refer to Figure 1B and Figure 1C The first build-up layer structure B11 is subjected to lithography processes such as exposure, development, and etching to form a patterned first build-up layer circuit layer 114a2' that exposes a portion of the first dielectric layer 113a1, and an opening 115a that extends from the first build-up layer circuit layer 114a2' to the composite material layer 112a and exposes a portion of the composite material layer 112a.

[0072] Next, please refer to Figure 1D , providing an insulating adhesive layer 120 in the opening 115a. Here, the insulating adhesive layer 120 is directly located on the composite material layer 112a exposed by the opening 115a. The insulating adhesive layer 120 has both adhesive and insulating effects.

[0073] Next, please refer to Figure 1E, a heating element 130a is disposed within the opening 115a. Specifically, the heating element 130a has an active surface 131 and a back surface 133 facing each other, and a peripheral surface 135 connecting the active surface 131 and the back surface 133. The heating element 130a includes a first electrode 132a1 and a second electrode 132a2 located on the active surface 131. The heating element 130a is disposed within the opening 115a with the active surface 131 facing upward and is secured within the opening 115a by an insulating adhesive layer 120. Here, the insulating adhesive layer 120 covers the back surface 133 and the peripheral surface 135 of the heating element 130a, and the heating element 130a contacts the composite material layer 112a through the insulating adhesive layer 120. The heating element 130a may be, for example, an electronic chip or an optoelectronic device, but is not limited thereto. The electronic chip may be an integrated circuit chip, such as a graphics chip, a memory chip, a semiconductor chip, or a single chip or a chip module. The optoelectronic device may be, for example, a light-emitting diode (LED), a laser diode, or a gas discharge light source. Of course, the heating element 130a can also be any object that generates heat, such as a running motor or heater, etc. Here, the heating element 130a is described by taking a semiconductor chip as an example.

[0074] Next, please refer to Figure 1F An electrical connection layer 140 is formed to connect the first build-up wiring layer 114a2' to the first electrode 132a1 of the heating element 130a, and to connect the first build-up wiring layer 114a2' to the second electrode 132a2 of the heating element 130a. The electrical connection layer 140 exposes a portion of the active surface 131 of the heating element 130a and a portion of the first dielectric layer 113a1 of the first build-up structure B11'. Here, the heating element 130a is disposed on the circuit board 110a and is electrically connected to the wiring layer (i.e., the first build-up wiring layer 114a2') via the electrical connection layer 140. The heat generated by the heating element 130a is transferred to the outside world through the composite material layer 112a. In other words, the electricity of the heating element 130a is transferred by the electrical connection layer 140, while the heat of the heating element 130a is dissipated by the composite material layer 112a. In other words, the composite material layer 112a only has the function of dissipating heat and does not have the function of conducting electricity.

[0075] Finally, please refer to Figure 1GLamination is used to form a third build-up structure B31 on the first build-up structure B11', and a fourth build-up structure B41 on the second build-up structure B21. The third build-up structure B31 includes at least one dielectric layer (schematically showing a dielectric layer 113a3), at least one circuit layer (schematically showing a circuit layer 114a4), and a plurality of vias 114a5. The circuit layer 114a4 is electrically connected to the first build-up circuit layer 114a2' via the vias 114a5 and the electrical connection layer 140. The fourth build-up structure B41 includes at least one dielectric layer (schematically shown as a dielectric layer 113a4), at least one circuit layer (schematically shown as a circuit layer 114a6), and at least one conductive via (schematically shown as a conductive via 117a2). Dielectric layer 113a4 is located between the second build-up circuit layer 114a3 and the circuit layer 114a6, and the circuit layer 114a6 is electrically connected to the second build-up circuit layer 114a3 via the conductive via 117a2. Thus, the package structure 100a with embedded components is completed.

[0076] Regarding the structure, please refer to Figure 1G , the packaging structure 100a of this embodiment includes a circuit board 110a and a heating element 130a. The circuit board 110a includes multiple circuit layers and a composite material layer 112a, wherein the circuit layer includes an inner circuit layer 114a1, a first build-up circuit layer 114a2', and a second build-up circuit layer 114a3. The thermal conductivity of the composite material layer 112a is between 450W / mK and 700W / mK. The heating element 130a is configured on the circuit board 110a and is electrically connected to the circuit layer (i.e., the first build-up circuit layer 114a2'). The heat generated by the heating element 130a is transferred to the outside through the composite material layer 112a.

[0077] More specifically, the circuit board 110a of this embodiment includes a core substrate C1, a first build-up layer structure B11', and a second build-up layer structure B21. The core substrate C1 includes a core layer 111a, a composite material layer 112a, and an inner circuit layer 114a1. The composite material layer 112a and the inner circuit layer 114a1 are respectively located on opposite sides of the core layer 111a. The composite material layer 112a includes a first material and a second material, wherein the thermal conductivity of the first material is greater than the thermal conductivity of the second material. Preferably, the first material is graphene, and the second material is copper. The first build-up layer structure B11' is configured on one side of the core substrate C1 and includes a first dielectric layer 113a1, a first build-up circuit layer 114a2', and an opening 115a. The first dielectric layer 113a1 is located between the first build-up circuit layer 114a2' and the composite material layer 112a. Opening 115a extends from first build-up wiring layer 114a2' to composite material layer 112a, exposing a portion of composite material layer 112a. Heat-generating element 130a is disposed within opening 115a and located on composite material layer 112a exposed by opening 115a. Second build-up structure B21 is disposed on the other side of core substrate C1 and includes a second dielectric layer 113a2, a second build-up wiring layer 114a3, and conductive vias 117a1. Second dielectric layer 113a2 is located between second build-up wiring layer 114a3 and inner wiring layer 114a1, and second build-up wiring layer 114a3 is electrically connected to inner wiring layer 114a1 via conductive vias 117a1.

[0078] Furthermore, the packaging structure 100a of this embodiment further includes an insulating adhesive layer 120 and an electrical connection layer 140. The insulating adhesive layer 120 is disposed between the opening 115a and the heating element 130a. The heating element 130a has an active surface 131 and a back surface 133 facing each other, and a peripheral surface 135 connecting the active surface 131 and the back surface 133, and includes a first electrode 132a1 and a second electrode 132a2 located on the active surface 131. The insulating adhesive layer 120 covers the back surface 133 and the peripheral surface 135 of the heating element 130a, and the heating element 130a contacts the composite material layer 112a through the insulating adhesive layer 120. The electrical connection layer 140 connects the first build-up circuit layer 114a2' to the first electrode 132a1 of the heating element 130a, and connects the first build-up circuit layer 114a2' to the second electrode 132a2 of the heating element 130a. The electrical connection layer 140 exposes a portion of the active surface 131 of the heating element 130 a and a portion of the first dielectric layer 113 a 1 of the first build-up structure B11 ′.

[0079] In addition, the package structure 100a of this embodiment further includes a third build-up structure B31 and a fourth build-up structure B41. The third build-up structure B31 is disposed on the first build-up structure B11' and is electrically connected to the first build-up circuit layer 114a2'. The third build-up structure B31 includes a dielectric layer 113a3, a circuit layer 114a4, and vias 114a5, wherein the circuit layer 114a4 is electrically connected to the first build-up circuit layer 114a2' via the vias 114a5 and the electrical connection layer 140. The fourth build-up structure B41 is disposed on the second build-up structure B21 and is electrically connected to the second build-up circuit layer 114a3. The fourth build-up structure B41 includes a dielectric layer 113a4, a circuit layer 114a6, and conductive vias 117a2, wherein the dielectric layer 113a4 is located between the second build-up circuit layer 114a3 and the circuit layer 114a6, and the circuit layer 114a6 is electrically connected to the second build-up circuit layer 114a3 through the conductive vias 117a2.

[0080] In short, in the package structure design of this embodiment, the circuit board 110a includes a composite material layer 112a having a thermal conductivity between 450W / mK and 700W / mK. Heat generated by the heating element 130a is transferred to the outside world through the composite material layer 112a. In other words, the package structure 100a of this embodiment transfers the heat generated by the heating element 130a to the outside world in a horizontal direction via the composite material layer 112a, which has a thermal conductivity greater than that of copper (400W / mK). Therefore, compared to conventional methods of electroplating copper to form thermal pads, bars, x-vias, embedded copper blocks, or using a metal core to divert heat vertically (i.e., the Z direction), the composite material layer 112a of this embodiment has a higher thermal conductivity than copper, and therefore can dissipate heat faster in the horizontal direction than in the vertical direction. Therefore, in addition to dissipating heat more quickly, the package structure 100a of this embodiment also has better heat dissipation efficiency. Furthermore, in the package structure 100a of this embodiment, the heat generated by the heating element 130a is transferred to the outside through the composite material layer 112a, while the electrical property of the heating element 130a is transferred through the electrical connection layer 140, thereby forming a thermal and electrical separation structure.

[0081] It should be noted that the following embodiments share the same component numbers and some of the contents of the previous embodiments, wherein the same reference numerals are used to represent the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, please refer to the previous embodiments, and the following embodiments will not repeat them.

[0082] Figures 2A to 2B FIG1 is a cross-sectional view of a partial step of a method for manufacturing a packaging structure according to another embodiment of the present invention. Figure 1B After the steps, please refer to Figure 2A Conductive vias 117b are formed by laser drilling and electroplating to penetrate the first dielectric layer 113b1 of the first build-up structure B12, the core layer 111b of the core substrate C2, and the second dielectric layer 113b2 of the second build-up structure B22. The second build-up structure B22 also includes a plurality of conductive vias 114b7, wherein the second build-up circuit layer 114b3 is electrically connected to the inner circuit layer 114b1 through the conductive vias 114b7. Figure 1C 、 Figure 1D 、 Figure 1E and Figure 1F , wherein the conductive via 117b is electrically connected to the first build-up circuit layer 114b2 and the second build-up circuit layer 114b3, and the conductive via 117b does not contact the composite material layer 112b.

[0083] Afterwards, please refer to Figure 2B A third build-up structure B32 is formed on the first build-up structure B12 by lamination, and a fourth build-up structure B42 is formed on the second build-up structure B22 by lamination. The third build-up structure B32 includes at least one dielectric layer (schematically showing a dielectric layer 113b3), at least one circuit layer (schematically showing a circuit layer 114b4), and a plurality of vias 114b5, wherein the circuit layer 114b4 is electrically connected to the first build-up circuit layer 114b2 through the vias 114b5. The fourth build-up structure B42 includes at least one dielectric layer (schematically showing a dielectric layer 113b4), at least one circuit layer (schematically showing a circuit layer 114b6), and a plurality of vias 114b9, wherein the dielectric layer 113b4 is located between the second build-up circuit layer 114b3 and the circuit layer 114b6. Thus, the package structure 100b with embedded components has been completed, and the package structure 100b is a thermal and electrical separation structure.

[0084] Figures 3A to 3E This is a cross-sectional diagram of a method for manufacturing a packaging structure according to another embodiment of the present invention. Figure 3AA core substrate C3 is provided, wherein the core substrate C3 includes a composite material layer 112c, dielectric layers 113c1, 113c2, 113c3, and circuit layers 114c1, 114c2, and 114c3. Dielectric layer 113c1 is located between circuit layer 114c1 and circuit layer 114c2. Here, circuit layers 114c1 and 114c2 are patterned circuit layers, wherein circuit layer 114c1 is electrically connected to circuit layer 114c2 via conductive vias 117c. Dielectric layer 113c2 is located between circuit layer 114c1 and composite material layer 112c, and dielectric layer 113c3 is located between circuit layer 114c2 and circuit layer 114c3.

[0085] Next, please also refer to Figure 3A and Figure 3B A laser process is performed to form conductive vias 119c1, electrically connecting circuit layer 114c2 and circuit layer 114c3. Next, a patterning process is performed to form a patterned composite material layer 112c' and a patterned circuit layer 114c3'. Composite material layer 112c' includes a first composite material portion 112c1 and a second composite material portion 112c2, which are separated from each other. Composite material layer 112c' exposes a portion of dielectric layer 113c2, while circuit layer 114c3' exposes a portion of dielectric layer 113c3.

[0086] Next, please refer to Figure 3C , a first build-up structure B13 is formed on one side of the core substrate C3 by lamination. The first build-up structure B13 includes at least one first dielectric layer (schematically showing a first dielectric layer 113c4) and at least one first build-up circuit layer (schematically showing a first build-up circuit layer 114c4). The first dielectric layer 113c4 is located between the first build-up circuit layer 114c4 and the composite material layer 112c'. Next, a second build-up structure B23 is formed on the other side of the core substrate C3 by lamination. The second build-up structure B23 includes at least one second dielectric layer (schematically showing a second dielectric layer 113c5), a second build-up circuit layer (schematically showing a second build-up circuit layer 114c5) and at least one conductive via (schematically showing a conductive via 119c2). The second dielectric layer 113c5 is located between the second build-up circuit layer 114c5 and the circuit layer 114c3', and the second build-up circuit layer 114c5 is electrically connected to the circuit layer 114c3' through the conductive via 119c2.

[0087] Please refer to Figure 3CAn opening 115c is formed extending from the first build-up circuit layer 114c4 to the composite material layer 112c', and exposing a portion of the first composite material portion 112c1 and a portion of the second composite material portion 112c2 of the composite material layer 112c'.

[0088] Afterwards, please refer to Figure 3D The heating element 130c is disposed in the opening 115c with the active surface 131 facing downward. The first electrode 132c1 is structurally and electrically connected to the first composite material portion 112c1. The second electrode 132c2 is structurally and electrically connected to the second composite material portion 112c2.

[0089] Finally, please refer to Figure 3E , a laser drilling process is performed to form a conductive hole 114c8 to electrically connect the circuit layer 114c4 and the first composite material portion 112c1 of the composite material layer 112c'. Then, a third build-up layer structure B33 is formed on the first build-up layer structure B13 by lamination, and a fourth build-up layer structure B43 is formed on the second build-up layer structure B23 by lamination. The third build-up layer structure B33 includes at least one dielectric layer (schematically showing a dielectric layer 113c6) and at least one circuit layer (schematically showing a circuit layer 114c6), wherein the dielectric layer 113c6 is located between the circuit layer 114c6 and the circuit layer 114c4 and covers the heating element 130c. The fourth build-up structure B43 includes at least one dielectric layer (schematically shown as a dielectric layer 113c7), at least one circuit layer (schematically shown as a circuit layer 114c7), and at least one conductive via (schematically shown as a conductive via 119c3). Dielectric layer 113c7 is located between circuit layer 114c5 and circuit layer 114c7, and circuit layer 114c7 is electrically connected to circuit layer 114c5 via conductive via 119c3. Thus, a package structure 100c with embedded components is completed.

[0090] In short, in the packaging structure 100c of this embodiment, the first electrode 132c1 of the heating element 130c is electrically connected to the circuit layer 114c4 through the first composite material portion 112c1 and the conductive hole 114c8. In other words, in addition to having the function of heat dissipation, the first composite material portion 112c1 also has the function of conducting electricity. The heat energy generated by the heating element 130c can be transferred to the outside world through the composite material layer 112c' that is in direct contact with the second electrode 132c2. In other words, the packaging structure 100c of this embodiment can be regarded as a thermoelectric integrated structure. In addition to being able to quickly transfer the heat generated by the heating element 130c to the outside world, it also has better electrical conductivity.

[0091] Figures 4A to 4D FIG. 1 is a cross-sectional view of a method for manufacturing a package structure according to another embodiment of the present invention. Regarding the method for manufacturing the package structure of this embodiment, first, please refer to Figure 4A , providing a core substrate C4. The core substrate C4 includes a core dielectric layer 111d and a first circuit layer 114d1 and a second circuit layer 114d2 located on opposite sides of the core dielectric layer 111d. Here, the first circuit layer 114d1 and the second circuit layer 114d2 are patterned circuit layers.

[0092] Next, please refer to Figure 4A , a first build-up structure B14 is formed on the first circuit layer 114d1 of the core substrate C4 by lamination. The first build-up structure B14 includes a first dielectric layer 113d1 and a composite material layer 112d, wherein the first dielectric layer 113d1 is located between the composite material layer 112d and the first circuit layer 114d1. Next, a second build-up structure B24 is formed on the second circuit layer 114d2 of the core substrate C4 by lamination. The second build-up structure B24 includes a second dielectric layer 113d2 and a third circuit layer 114d3. The second dielectric layer 113d2 is located between the second circuit layer 114d2 and the third circuit layer 114d3. In other words, the multi-layer circuit layer here includes the first circuit layer 114d1, the second circuit layer 114d2, and the third circuit layer 114d3.

[0093] Next, please refer to Figure 4B The composite material layer 112d and the third circuit layer 114d3 are patterned to form a patterned composite material layer 112d' and a patterned third circuit layer 114d3'. Here, the composite material layer 112d' includes a first composite material portion 112d1 and a second composite material portion 112d2 that are separated from each other. Next, a through hole T is formed to penetrate the first build-up layer structure B14, the core substrate C4, and the second build-up layer structure B24. Then, a conductive connection layer 150 is formed on the inner wall of the through hole T by electroplating and is electrically connected to the composite material layer 112d', the first circuit layer 114d1, the second circuit layer 114d2, and the third circuit layer 114d3'. At this point, the production of the circuit board 110d is completed.

[0094] Afterwards, please refer to Figure 4CA solder mask layer 160 is formed on the circuit board 110d by printing. The solder mask layer 160 fills the through-hole T and covers the conductive connection layer 150, the composite material layer 112d', and the third circuit layer 114d3', while exposing portions of the composite material layer 112d' and the third circuit layer 114d3'. Specifically, the solder mask layer 160 exposes a portion of the first composite material portion 112d1 and a portion of the second composite material portion 112d2 of the composite material layer 112d'.

[0095] Finally, please refer to Figure 4D , placing the heating element 130d on the composite material layer 112d' exposed by the solder mask 160. The heating element 130d is placed on the circuit board 110d with its active surface 131 facing downward. The first electrode 132d1 is structurally and electrically connected to the first composite material portion 112d1, while the second electrode 132d2 is structurally connected to the second composite material portion 112d2. In other words, both the first electrode 132d1 and the second electrode 132d2 are in direct contact with the composite material layer 112d', but the first electrode 132d1 and the second electrode 132d2 are not electrically connected to each other. At this point, the production of the package structure 100d is complete.

[0096] In short, in the packaging structure 100d of this embodiment, the first electrode 132d1 of the heating element 130d can be electrically connected to the conductive connection layer 150 through the first composite material portion 112d1. That is, in addition to having a heat-conducting function, the first composite material portion 112d1 also has an electrical conductivity function. The heat energy generated by the heating element 130d can be transferred to the outside world through the second composite material portion 112d2 that is in direct contact with the second electrode 132d2. In other words, the packaging structure 100d of this embodiment can be regarded as a thermoelectric integrated structure. In addition to being able to quickly transfer the heat generated by the heating element 130d to the outside world, it also has better electrical conductivity.

[0097] In summary, in the packaging structure design of the present invention, the circuit board includes a composite material layer with a thermal conductivity between 450W / mK and 700W / mK, and the heat generated by the heating element is transferred to the outside world through the composite material layer. In other words, the packaging structure of the present invention uses the composite material layer, which has a thermal conductivity greater than that of copper (400W / mK), to transfer the heat generated by the heating element to the outside world in a horizontal direction. Therefore, in addition to faster heat dissipation, it also has better heat dissipation efficiency.

[0098] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A packaging structure, characterized in that: include: A circuit board, comprising a plurality of circuit layers and a composite material layer, wherein the thermal conductivity of the composite material layer is between 450 W / mK and 700 W / mK; as well as A heating element is disposed on the circuit board and electrically connected to the multi-layer circuit layer, wherein the heat generated by the heating element is transferred to the outside through the composite material layer. The multi-layer circuit layer includes an inner circuit layer, at least one first build-up circuit layer and at least one second build-up circuit layer, and the circuit board includes: A core substrate, comprising a core layer, the composite material layer and the inner circuit layer, wherein the composite material layer and the inner circuit layer are respectively located on two opposite sides of the core layer; A first build-up layer structure is disposed on one side of the core substrate and includes at least one first dielectric layer, the at least one first build-up layer circuit layer, and an opening, wherein the first dielectric layer is located between the at least one first build-up layer circuit layer and the composite material layer, and the opening extends from the at least one first build-up layer circuit layer to the composite material layer and exposes a portion of the composite material layer, and the heating element is disposed in the opening; and The second build-up layer structure is disposed on the other side of the core substrate and includes at least one second dielectric layer and the at least one second build-up layer circuit layer, wherein the second dielectric layer is located between the at least one second build-up layer circuit layer and the inner circuit layer.

2. The packaging structure according to claim 1, characterized in that: The composite material layer includes a first material and a second material, and the thermal conductivity of the first material is greater than the thermal conductivity of the second material.

3. The packaging structure according to claim 2, characterized in that: The first material is graphene, and the second material is copper.

4. The packaging structure according to claim 1, characterized in that: Also includes: an insulating adhesive layer, disposed between the opening and the heating element, wherein the heating element has an active surface and a back surface opposite to each other and a peripheral surface connecting the active surface and the back surface, and includes a first electrode and a second electrode located on the active surface, the insulating adhesive layer covers the back surface and the peripheral surface of the heating element, and the heating element contacts the composite material layer through the insulating adhesive layer; as well as An electrical connection layer connects the at least one first build-up layer circuit layer and the first electrode of the heating element and connects the at least one first build-up layer circuit layer and the second electrode of the heating element, wherein the electrical connection layer exposes a portion of the active surface of the heating element and a portion of the first dielectric layer of the first build-up layer structure.

5. The packaging structure according to claim 4, characterized in that: Also includes: The conductive via penetrates the at least one first dielectric layer of the first build-up structure, the core layer of the core substrate and the at least one second dielectric layer of the second build-up structure, and electrically connects the at least one first build-up circuit layer and the at least one second build-up circuit layer.

6. The packaging structure according to claim 1, characterized in that: The heating element has an active surface and a back surface opposite to each other and includes a first electrode and a second electrode located on the active surface. The composite material layer includes a first composite material portion and a second composite material portion separated from each other, and the first electrode is structurally and electrically connected to the first composite material portion, and the second electrode is structurally and electrically connected to the second composite material portion.

7. The packaging structure according to claim 1, characterized in that: Also includes: A third build-up layer structure, disposed on the first build-up layer structure and electrically connected to the at least one first build-up layer circuit layer; as well as The fourth build-up layer structure is disposed on the second build-up layer structure and is electrically connected to the at least one second build-up layer circuit layer.

8. A packaging structure, characterized in that: include: A circuit board, comprising a plurality of circuit layers and a composite material layer, wherein the thermal conductivity of the composite material layer is between 450 W / mK and 700 W / mK; as well as A heating element is disposed on the circuit board and electrically connected to the multi-layer circuit layer, wherein the heat generated by the heating element is transferred to the outside through the composite material layer; The multi-layer circuit layer includes a first circuit layer, a second circuit layer and a third circuit layer, and the circuit board has a through hole and further includes: A core substrate, comprising a core dielectric layer and the first circuit layer and the second circuit layer located on opposite sides of the core dielectric layer; A first build-up layer structure is disposed on the first circuit layer of the core substrate, the first build-up layer structure comprising a first dielectric layer and the composite material layer, wherein the first dielectric layer is located between the composite material layer and the first circuit layer; A second build-up structure is disposed on the second circuit layer of the core substrate, the second build-up structure includes a second dielectric layer and the third circuit layer, wherein the second dielectric layer is located between the second circuit layer and the third circuit layer, and the through hole penetrates the first build-up structure, the core substrate and the second build-up structure; and The conductive connection layer is disposed on the inner wall of the through hole and is electrically connected to the composite material layer, the first circuit layer, the second circuit layer and the third circuit layer.

9. The packaging structure according to claim 8, characterized in that: Also includes: The solder mask is disposed on the circuit board and is located between the heating element and the composite material layer, wherein the solder mask fills the through hole and covers the conductive connection layer, the composite material layer and the third circuit layer, and exposes part of the composite material layer and part of the third circuit layer.

10. The packaging structure according to claim 9, characterized in that: The heating element is configured on the composite material layer exposed by the solder mask layer. The heating element has an active surface and a back surface opposite to each other and includes a first electrode and a second electrode located on the active surface. The composite material layer includes a first composite material portion and a second composite material portion separated from each other, and the first electrode is structurally and electrically connected to the first composite material portion, and the second electrode is structurally connected to the second composite material portion.

11. A method for manufacturing a packaging structure, characterized in that: include: A circuit board is provided, the circuit board comprising a plurality of circuit layers and a composite material layer, wherein the thermal conductivity of the composite material layer is between 450 W / mK and 700 W / mK; and A heating element is disposed on the circuit board, the heating element is electrically connected to the multi-layer circuit layer, wherein the heat generated by the heating element is transferred to the outside through the composite material layer, The multi-layer circuit layer includes an inner circuit layer, at least one first build-up circuit layer and at least one second build-up circuit layer. The step of providing the circuit board includes: Providing a core substrate, the core substrate comprising a core layer, the composite material layer and the inner circuit layer, the composite material layer and the inner circuit layer are respectively located on two opposite sides of the core layer; forming a first build-up structure on one side of the core substrate, the first build-up structure comprising at least one first dielectric layer and the at least one first build-up circuit layer, wherein the first dielectric layer is located between the at least one first build-up circuit layer and the composite material layer; forming an opening extending from the at least one first build-up circuit layer to the composite material layer and exposing a portion of the composite material layer; and A second build-up structure is formed on the other side of the core substrate, wherein the second build-up structure includes at least one second dielectric layer and the at least one second build-up circuit layer, wherein the second dielectric layer is located between the at least one second build-up circuit layer and the inner circuit layer.

12. The method for manufacturing a packaging structure according to claim 11, characterized in that: The composite material layer includes a first material and a second material, and the thermal conductivity of the first material is greater than the thermal conductivity of the second material.

13. The method for manufacturing a packaging structure according to claim 12, characterized in that: The first material is graphene, and the second material is copper.

14. The method for manufacturing a packaging structure according to claim 11, characterized in that: Also includes: After forming the opening and before disposing the heating element on the circuit board, providing an insulating adhesive layer in the opening; The heating element is arranged in the opening, wherein the heating element has an active surface and a back surface opposite to each other and a peripheral surface connecting the active surface and the back surface, and includes a first electrode and a second electrode located on the active surface, the insulating adhesive layer covers the back surface and the peripheral surface of the heating element, and the heating element contacts the composite material layer through the insulating adhesive layer; as well as An electrical connection layer is formed to connect the at least one first build-up layer circuit layer with the first electrode of the heating element and to connect the at least one first build-up layer circuit layer with the second electrode of the heating element, wherein the electrical connection layer exposes a portion of the active surface of the heating element and a portion of the first dielectric layer of the first build-up layer structure.

15. The method for manufacturing a packaging structure according to claim 14, characterized in that: Also includes: A conductive via is formed to penetrate the at least one first dielectric layer of the first build-up structure, the core layer of the core substrate, and the at least one second dielectric layer of the second build-up structure, wherein the conductive via electrically connects the at least one first build-up wiring layer and the at least one second build-up wiring layer.

16. The method for manufacturing a packaging structure according to claim 11, characterized in that: The step of configuring the heating element on the circuit board includes: The heating element is configured in the opening, wherein the heating element has an active surface and a back surface opposite to each other and includes a first electrode and a second electrode located on the active surface, the composite material layer includes a first composite material portion and a second composite material portion separated from each other, and the first electrode is structurally and electrically connected to the first composite material portion, and the second electrode is structurally and electrically connected to the second composite material portion.

17. The method for manufacturing a packaging structure according to claim 11, characterized in that: Also includes: After forming the first build-up layer structure, forming a third build-up layer structure on the first build-up layer structure, wherein the third build-up layer structure is electrically connected to the at least one first build-up layer circuit layer; as well as After forming the second build-up layer structure, forming a fourth build-up layer structure on the second build-up layer structure, wherein the second build-up layer structure is electrically connected to the at least one second build-up layer circuit layer.

18. A method for manufacturing a packaging structure, characterized in that: include: A circuit board is provided, the circuit board comprising a plurality of circuit layers and a composite material layer, wherein the thermal conductivity of the composite material layer is between 450 W / mK and 700 W / mK; and A heating element is disposed on the circuit board, the heating element is electrically connected to the multi-layer circuit layer, wherein the heat generated by the heating element is transferred to the outside through the composite material layer, The multi-layer circuit layer includes a first circuit layer, a second circuit layer and a third circuit layer, and the step of providing the circuit board includes: Providing a core substrate, the core substrate comprising a core dielectric layer and the first circuit layer and the second circuit layer located on opposite sides of the core dielectric layer; forming a first build-up layer structure on the first circuit layer of the core substrate, wherein the first build-up layer structure comprises a first dielectric layer and the composite material layer, wherein the first dielectric layer is located between the composite material layer and the first circuit layer; forming a second build-up layer structure on the second circuit layer of the core substrate, wherein the second build-up layer structure comprises a second dielectric layer and the third circuit layer, wherein the second dielectric layer is located between the second circuit layer and the third circuit layer; forming a through hole to penetrate the first build-up layer structure, the core substrate, and the second build-up layer structure; and A conductive connection layer is formed on the inner wall of the through hole and is electrically connected to the composite material layer, the first circuit layer, the second circuit layer and the third circuit layer.

19. The method for manufacturing a packaging structure according to claim 18, characterized in that: Also includes: Before configuring the heating element on the circuit board, a solder mask is formed on the circuit board, wherein the solder mask fills the through hole and covers the conductive connection layer, the composite material layer and the third circuit layer, and exposes part of the composite material layer and part of the third circuit layer.

20. The method for manufacturing a packaging structure according to claim 19, characterized in that: The step of configuring the heating element on the circuit board includes: The heating element is configured on the composite material layer exposed by the solder mask layer, the heating element has an active surface and a back surface opposite to each other and includes a first electrode and a second electrode located on the active surface, the composite material layer includes a first composite material portion and a second composite material portion separated from each other, and the first electrode is structurally and electrically connected to the first composite material portion, and the second electrode is structurally connected to the second composite material portion.

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