Packaging module and preparation method thereof, and electronic equipment

Abstract

The present application provides a packaging module, including a circuit substrate, a first heat dissipation device and a second heat dissipation device. The circuit substrate includes a first circuit layer, a first packaging layer and a second circuit layer stacked in sequence. A first electronic component is electrically connected to the first circuit layer. The second circuit layer includes a heat dissipation area and an edge area connected to the heat dissipation area. The first electronic component is also electrically connected to the heat dissipation area. The edge area is electrically connected to a lead terminal. The first packaging layer encapsulates the first electronic component and the first circuit layer. The first heat dissipation device is located on the surface of the first circuit layer. The second heat dissipation device is located on the surface of the heat dissipation area. The present application also provides a method for preparing the packaging module and an electronic device using the packaging module. The packaging module of the present application, through the design of the first circuit layer and the second circuit layer, enables the first electronic component to be installed with heat dissipation devices on both the front and back sides to achieve double-sided heat dissipation, thereby improving heat dissipation efficiency.

Description

Technical Field

[0001] The present application relates to a double-sided heat dissipation packaging module, a preparation method of the packaging module, and an electronic device using the packaging module. Background Art

[0002] In order to adapt to the increasingly higher power demand, power semiconductor devices, especially power supply type power semiconductor devices, are evolving towards being lighter, thinner, shorter and higher in power density. Therefore, the heat dissipation requirements for power semiconductor devices are becoming increasingly higher.

[0003] like Figure 1 As shown, it is an existing power semiconductor device, in which the back of a chip 1' is soldered on a circuit board 2', a heat sink 3 is connected to the surface of the circuit board 2' facing away from the chip 1', and lead pins are designed on the front of the chip 1'.

[0004] However, since the front side of the chip 1' requires bonding wires 4', it is difficult to design a heat dissipation method. Usually, only single-sided heat dissipation can be used, and the heat dissipation capacity is limited. The internal heat cannot be discharged in time, which may cause the temperature of the power semiconductor device to be too high, affecting the working efficiency and life of the power semiconductor device. In severe cases, it may cause internal components to fail or burn. Summary of the invention

[0005] A first aspect of the present application provides a packaging module, which includes a circuit substrate, a first heat dissipation device and a second heat dissipation device. The circuit substrate includes a first circuit layer, a first packaging layer and a second circuit layer stacked in sequence. A first electronic component is electrically connected to the first circuit layer. The second circuit layer includes a heat dissipation area and an edge area connected to the heat dissipation area. The first electronic component is also electrically connected to the heat dissipation area. A lead terminal is electrically connected to the edge area. The first packaging layer encapsulates the first electronic component and the first circuit layer. The first heat dissipation device is located on a surface of the first circuit layer away from the first electronic component. The second heat dissipation device is located on a surface of the heat dissipation area away from the first electronic component.

[0006] The present application achieves the purpose of installing the first heat sink on the back of the first electronic component by mounting the non-working surface (i.e., the back surface) of the first electronic component without pins on the first circuit layer, and by using the first circuit layer; at the same time, by setting a second circuit layer including a heat sink and an edge zone on the working surface (i.e., the front surface) of the first electronic component with pins, it is convenient to lead the side of the pins on the first electronic component to the edge zone of the second circuit layer to connect the lead terminal, and a mounting position is reserved on the heat sink of the second circuit layer, thereby achieving the purpose of setting the second heat sink on the front of the first electronic component. The packaging module of the present application achieves double-sided heat dissipation without affecting the lead-out of the pins of the first electronic component, thereby improving the heat dissipation efficiency of the packaging module, thereby improving the working efficiency and service life of the packaging module, and is conducive to the development of the packaging module in the direction of high density and lightness, thinness and miniaturization.

[0007] In combination with the first aspect, in some embodiments, a first heat conducting component is provided between the first circuit layer and the first heat dissipation device.

[0008] In combination with the first aspect, in some embodiments, a second heat conducting component is provided between the heat dissipation area and the second heat dissipation device.

[0009] By providing the first heat-conducting component and the second heat-conducting component, the heat in the circuit substrate can be quickly discharged and the heat dissipation efficiency can be improved.

[0010] In combination with the first aspect, in some embodiments, the packaging module also includes a second packaging layer, which encapsulates the first heat-conducting component, the circuit substrate and the second heat-conducting component, the surface of the first heat-conducting component facing away from the circuit substrate and the surface of the second heat-conducting component facing away from the circuit substrate are exposed in the second packaging layer, and the lead terminal extends out of the second packaging layer.

[0011] By adding a second packaging layer, the connection stability between the various parts in the packaging module can be improved, thereby improving the reliability of the packaging module.

[0012] In combination with the first aspect, in some embodiments, the lead terminal extends out from a side wall of the second packaging layer.

[0013] Leading the lead terminal out from the side wall of the second packaging layer can provide a larger installation area for the second heat dissipation device and improve the heat dissipation efficiency.

[0014] In combination with the first aspect, in some embodiments, the second circuit layer includes a wire and a first metal layer, both ends of the wire are electrically connected to the first electronic component and the lead terminal respectively, and the first metal layer is located in the heat dissipation area and connected to the second heat dissipation device.

[0015] By adding a large-area first metal layer in the heat dissipation zone, the contact area between the second circuit layer and the second heat-conducting component is increased, which is beneficial to improving the heat dissipation effect of the packaging module.

[0016] In combination with the first aspect, in some embodiments, a third heat-conducting component encapsulated in the first encapsulation layer is further provided on the first circuit layer, and the third heat-conducting component is respectively connected to the first circuit layer and the second circuit layer.

[0017] By arranging the third heat-conducting component in the first packaging layer, the heat accumulated in the first packaging layer can be effectively exported to the first circuit layer and the second circuit layer, thereby improving the heat export efficiency inside the packaging module.

[0018] In combination with the first aspect, in some embodiments, a second electronic component is electrically connected to the second circuit layer.

[0019] By arranging the second electronic component on the second circuit layer, the space utilization inside the circuit substrate can be improved, thereby increasing the packaging density of the packaging module.

[0020] In combination with the first aspect, in some embodiments, the first heat-conducting component includes a first insulating heat-conducting layer and a second metal layer stacked together, and the first insulating heat-conducting layer is located between the first circuit layer and the second metal layer.

[0021] The first insulating heat-conducting layer can be used to insulate the circuit substrate, and the introduction of the second metal layer can improve the heat dissipation efficiency. Moreover, the first insulating heat-conducting layer can be pressed and connected to the circuit substrate without introducing a welding process, thus simplifying the process.

[0022] In combination with the first aspect, in some embodiments, the second heat-conducting component includes a stacked second insulating heat-conducting layer and a third metal layer, and the second insulating heat-conducting layer is located between the second circuit layer and the third metal layer.

[0023] The second insulating heat-conducting layer can be used to insulate the circuit substrate, and the third metal layer can be used to improve the heat dissipation efficiency. The second insulating heat-conducting layer can be pressed and connected to the circuit substrate without the need for welding, thus simplifying the process.

[0024] In combination with the first aspect, in some embodiments, the second heat-conducting component includes a second insulating heat-conducting layer and two third metal layers located on opposite surfaces of the second insulating heat-conducting layer, and one of the third metal layers is connected to the second circuit layer through a connecting layer, and the material of the connecting layer is a thermally conductive material.

[0025] The second heat-conducting component with the third metal layer on both sides is connected to the circuit substrate through the heat-conducting connecting layer to achieve the purpose of insulation and heat conduction. At the same time, multiple second heat-conducting components can be arranged according to the distribution of heat sources inside the circuit substrate, and other electronic components can be introduced on the second circuit layer, thereby improving the flexibility of the packaging module structure design.

[0026] A second aspect of the present application provides a method for preparing a packaging module, the method comprising the steps of:

[0027] A circuit substrate is provided, the circuit substrate comprising a first circuit layer, a first packaging layer and a second circuit layer stacked in sequence, the first circuit layer being electrically connected to a first electronic component, the second circuit layer comprising a heat dissipation area and an edge area connected to the heat dissipation area, the first electronic component is also electrically connected to the heat dissipation area, the edge area is electrically connected to a lead terminal, and the first packaging layer encapsulates the first electronic component and the first circuit layer;

[0028] Disposing a first heat dissipation device on a surface of the first circuit layer away from the first electronic component;

[0029] A second heat dissipation device is arranged on the surface of the heat dissipation area away from the first electronic component, so as to obtain the packaging module.

[0030] The preparation method of the packaging module provided by the present application is convenient for mounting the first heat sink on the back of the first electronic component by designing the first circuit layer; at the same time, by designing the second circuit layer including the heat dissipation area and the edge area on the front of the first electronic component, the pins of the first electronic component are led out to the edge area of ​​the second circuit layer, and the heat dissipation area of ​​the second circuit layer is reserved as the installation position of the second heat sink, so as to achieve the purpose of mounting the second heat sink on the front of the first electronic component, thereby enabling the packaging module to achieve double-sided heat dissipation without affecting the mounting lead terminal, and effectively improving the heat dissipation effect. The preparation method of the packaging module of the present application is simple in process, easy to implement, low in cost, and convenient for mass production, and the number of welding times in the whole process is small, the molding efficiency is high, and the reliability of the packaging module is high.

[0031] In combination with the second aspect, in some embodiments, a first heat conducting component is provided between the first circuit layer and the first heat dissipation device, and the method for preparing the circuit substrate comprises the steps of:

[0032] forming the first circuit layer on the surface of the first heat conducting component;

[0033] electrically connecting the first electronic component to the surface of the first circuit layer;

[0034] forming the first packaging layer on the surface of the first heat-conducting component, so that the first packaging layer encapsulates the first electronic component and the first circuit layer;

[0035] forming the second circuit layer on a surface of the first packaging layer facing away from the first heat conducting component, and electrically connecting the second circuit layer to the first electronic component; and

[0036] The lead terminal is disposed on the edge region of the second circuit layer so as to electrically connect the lead terminal to the second circuit layer, thereby forming the circuit substrate on the surface of the first heat-conducting component.

[0037] In combination with the second aspect, in some embodiments, after the circuit substrate is formed on the surface of the first heat conducting component, the method for preparing the packaging module further includes the steps of:

[0038] A second heat conducting component is disposed on the heat dissipation area of ​​the second circuit layer.

[0039] By directly molding the circuit substrate on the surface of the first heat-conducting component and installing the second heat-conducting component, a structure including the circuit substrate, the first heat-conducting component and the second heat-conducting component can be molded in one step. The molding method is simple, easy to implement, and convenient for mass production. In addition, the number of welding times in the entire process is small, the molding efficiency is high, and the reliability of the packaging module is high.

[0040] In combination with the second aspect, in some embodiments, a first heat conducting component is provided between the first circuit layer and the first heat dissipation device, and a second heat conducting component is provided between the heat dissipation area and the second heat dissipation device. After obtaining the circuit substrate, the method for preparing the packaging module further includes the steps of:

[0041] The first heat-conducting component, the circuit substrate, and the second heat-conducting component are sequentially stacked and pressed together.

[0042] The circuit substrate is first molded, and then the first heat-conducting component and the second heat-conducting component are pressed together with the circuit substrate to form a whole. The circuit substrate is molded separately, and then the circuit substrate with the first heat-conducting component and the second heat-conducting component is molded by pressing. The molding method is simple, the molding process is further simplified, the molding difficulty of the packaging module is reduced, the versatility of the circuit substrate is improved, the molding efficiency is improved, the number of welding times can be further reduced, the reliability of the packaging module is improved, and the yield of the product is improved.

[0043] In conjunction with the second aspect, in some embodiments, the method for preparing the circuit substrate comprises the steps of:

[0044] forming a second copper layer on the surface of the release layer of the carrier;

[0045] patterning the second copper layer to form the first circuit layer;

[0046] electrically connecting the first electronic component to the surface of the first circuit layer;

[0047] forming the first packaging layer on the surface of the peeling layer, so that the first packaging layer encapsulates the first electronic component and the first circuit layer;

[0048] forming the second circuit layer on the surface of the first packaging layer facing away from the peeling layer, and electrically connecting the second circuit layer to the first circuit layer;

[0049] electrically connecting the lead terminal on the second circuit layer; and

[0050] The carrier is removed to obtain the circuit substrate.

[0051] Through the above circuit substrate preparation process, the first circuit layer can be buried in the first packaging layer, reducing the thickness of the circuit substrate. In addition, the circuit substrate preparation process is simple, the molding efficiency is high, the product yield is high, and the cost is low, which is convenient for mass production.

[0052] In combination with the second aspect, in some embodiments, before forming the first encapsulation layer, the method for preparing the circuit substrate further includes the steps of:

[0053] A third heat conducting component is disposed on the first circuit layer, and the third heat conducting component is connected to the first circuit layer.

[0054] In combination with the second aspect, in some embodiments, after forming the second circuit layer, the method for preparing the packaging module further includes the steps of:

[0055] A second electronic component is electrically connected to the second circuit layer.

[0056] In combination with the second aspect, in some embodiments, the second circuit layer is formed by using a redistribution technology.

[0057] The second circuit layer formed by the rewiring technology can lead the pins with high density distribution on the surface of the first electronic component to the edge area of ​​the second circuit layer, which is convenient for connecting the lead terminal in the edge area to realize the lateral lead-out of the lead terminal; at the same time, a heat dissipation area is reserved for installing the second heat dissipation device, thereby achieving the purpose of double-sided heat dissipation of the first electronic component. In addition, the thickness of the second circuit layer formed by the rewiring technology is relatively thin, which is conducive to reducing the total thickness of the circuit substrate compared to the second circuit layer formed by the traditional circuit forming method, and thus conducive to the lightness, thinness and miniaturization of the packaging module.

[0058] In combination with the second aspect, in some embodiments, before providing the first heat dissipation device and the second heat dissipation device, the method for preparing the packaging module further includes the steps of:

[0059] A second packaging layer is provided for packaging the first heat-conducting component, the circuit substrate and the second heat-conducting component, the surface of the first heat-conducting component facing away from the circuit substrate and the surface of the second heat-conducting component facing away from the circuit substrate are exposed in the second packaging layer, and the lead terminal extends out of the second packaging layer.

[0060] A third aspect of the present application provides an electronic device, which includes a housing and the packaging module as described above located in the housing. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] Figure 1 It is a structural schematic diagram of a packaging module in the prior art.

[0062] Figure 2 It is a schematic diagram of the structure of a packaging module according to an embodiment of the present application.

[0063] Figure 3 yes Figure 2 A schematic structural diagram of a circuit substrate, a first heat-conducting component and a second heat-conducting component.

[0064] Figure 4 It is a top view of the second circuit layer in the packaging module of one embodiment of the present application.

[0065] Figure 5 It is a schematic diagram of the structure of the connection pad in the packaging module of one embodiment of the present application.

[0066] Figure 6 It is a structural schematic diagram of a packaging module according to another embodiment of the present application.

[0067] Figure 7 It is a structural schematic diagram of a packaging module according to another embodiment of the present application.

[0068] Fig. 8A It is a flow chart of a method for preparing a packaging module according to an embodiment of the present application.

[0069] Figure 8B It is a flow chart of a method for preparing a circuit substrate according to an embodiment of the present application.

[0070] Figure 8C It is a flow chart of a method for preparing a packaging module according to another embodiment of the present application.

[0071] Fig.8D It is a flow chart of a method for preparing a circuit substrate according to another embodiment of the present application.

[0072] Fig. 9A The following is a schematic diagram of the preparation process of the packaging module according to an embodiment of the present application. Figure 1 .

[0073] Fig. 9B The following is a schematic diagram of the preparation process of the packaging module according to an embodiment of the present application. Figure 2 .

[0074] Fig. 9C The following is a schematic diagram of the preparation process of the packaging module according to an embodiment of the present application. Figure 3 .

[0075] Fig.9D The following is a schematic diagram of the preparation process of the packaging module according to an embodiment of the present application. Figure 4 .

[0076] Fig.9E The following is a schematic diagram of the preparation process of the packaging module according to an embodiment of the present application. Figure 5 .

[0077] Fig.9F The following is a schematic diagram of the preparation process of the packaging module according to an embodiment of the present application. Figure 6 .

[0078] Figure 9G The following is a schematic diagram of the preparation process of the packaging module according to an embodiment of the present application. Figure 7 .

[0079] Fig.10 It is a schematic diagram of the preparation process of a packaging module according to another embodiment of the present application.

[0080] Fig.11A is a schematic diagram of a preparation process of a circuit substrate according to another embodiment of the present application Figure 1 .

[0081] Fig. 11B is a schematic diagram of a preparation process of a circuit substrate according to another embodiment of the present application Figure 2 .

[0082] Fig. 11C is a schematic diagram of a preparation process of a circuit substrate according to another embodiment of the present application Figure 3 .

[0083] Fig.11D is a schematic diagram of a preparation process of a circuit substrate according to another embodiment of the present application Figure 4 .

[0084] Fig.12 It is a schematic diagram of the structure of an electronic device according to an embodiment of the present application. DETAILED DESCRIPTION

[0085] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

[0086] Most common power semiconductor devices have single-sided heat dissipation. A heat dissipation device is set on the back of the chip, and leads need to be designed on the front of the chip. It is difficult to achieve double-sided heat dissipation, and the heat dissipation efficiency is low.

[0087] For this reason, please see Figure 2 As shown, in order to improve the heat dissipation efficiency of power semiconductor devices, the present application provides a packaging module 100 that can achieve double-sided heat dissipation. The packaging module 100 can be a power semiconductor device for power processing, including frequency conversion, voltage conversion, current conversion, power management, etc.

[0088] like Figure 2 and Figure 3 As shown, the packaging module 100 includes a circuit substrate 2, a first heat sink 10 and a second heat sink 20, wherein the circuit substrate 2 includes a first circuit layer 21, a first packaging layer 22 and a second circuit layer 23 stacked in sequence, the first circuit layer 21 is electrically connected to a first electronic component 24, the second circuit layer 23 includes a heat sink area A and an edge area B connected to the heat sink area A, the first electronic component 24 is also electrically connected to the heat sink area A, the edge area B is electrically connected to a lead terminal 25, and the first packaging layer 22 encapsulates the first electronic component 24 and the first circuit layer 21. The first heat sink 10 is located on the surface of the first circuit layer 21 away from the first electronic component 24; the second heat sink 20 is located on the surface of the heat sink area A away from the first electronic component 24.

[0089] like Figure 2 and Figure 3 As shown, the first circuit layer 21 of the circuit substrate 2 is buried in the first packaging layer 22 , which is beneficial to reducing the thickness of the circuit substrate 2 .

[0090] The first electronic component 24 may include one or more active devices, such as active chips, including but not limited to power chips, digital chips, radio frequency chips, etc. In this embodiment, the first electronic component 24 may include power chips such as insulated gate bipolar transistors (IGBT), silicon carbide (SiC), and gallium nitride (GaN). It is understandable that the first electronic component 24 may also include one or more passive devices, including but not limited to resistors, capacitors, inductors, filters, couplers, etc. The back side (i.e., the non-active side) of the first electronic component 24 can be set on the first circuit layer 21 by a mounting method, and specifically can be mounted on the surface of the first circuit layer 21 by flip-chip bonding.

[0091] The material of the first packaging layer 22 is an insulating thermally conductive packaging material, which generally includes an insulating resin and an insulating thermally conductive filler. The insulating resin can be selected from one of ABF resin, prepreg (PP), epoxy resin, BT resin, polyphenylene oxide (PPO), polyimide (PI), polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). Specifically, in this embodiment, the insulating resin used in the first packaging layer 22 can be ABF resin, which is conducive to the production of fine lines and is suitable for encapsulating chips with high pin counts and high transmission. The insulating thermally conductive filler can be selected from particles such as nano silicon oxide powder, nano silicon nitride powder, nano silicon carbide powder, nano boron nitride powder, and nano aluminum oxide powder. For example, the insulating thermally conductive packaging material can be obtained by uniformly dispersing ABF resin and thermally conductive insulating filler. The first packaging layer 22 formed by the insulating thermally conductive ABF resin has the characteristics of high thermal conductivity, good dielectric properties, low thermal expansion coefficient, high strength, high hardness, non-toxicity and harmlessness, and is suitable for the packaging of precision electronic components.

[0092] like Figure 3 As shown, by forming a first through hole 221 on the first packaging layer 22 and forming a conductor 26 in the first through hole 221, the second circuit layer 23 is electrically connected to the first electronic component 24, and then the pins on the first electronic component 24 are led out. The first through hole 221 is formed by laser punching or mechanical punching. The shape of the first through hole 221 is not limited, and it can be a circular through hole, or it can be other shapes, such as a rectangle, a triangle, or other irregular shapes. The first through hole 221 that passes through the first packaging layer 22 above the first electronic component 24 is formed by a conventional punching method. The punching method is simple, easy to implement, and low in cost. In addition, the material of the first packaging layer 22 is selected as ABF packaging material, which is conducive to laser forming a smaller first through hole 221 to adapt to the pin lead-out of the first electronic component 24 with a high number of pins and high transmission.

[0093] The conductor 26 is formed by electroplating copper in the first through hole 221. The conductor 26 is formed by electroplating, which can improve the connection stability between the conductor 26 and the first electronic component 24. The process is simple, easy to implement, and low in cost. In addition, the conductor 26 can be arranged according to the actual pin position of the first electronic component 24 by electroplating, and the structural form of the conductor 26 can be designed as needed, with little limitation. In other embodiments, the conductor 26 can also be formed by filling the first through hole 221 with conductive paste and curing. The conductor 26 is formed by filling the conductive paste and curing. The process is simple, easy to operate, and low in cost. In addition, a portion of the first packaging layer 22 is polished away by polishing, so that the end of the conductor 26 away from the first electronic component 24 is completely exposed from the surface of the first packaging layer 22 away from the first insulating heat-conducting layer 11, which is convenient for subsequent circuit lead-out to form the second circuit layer 23.

[0094] like Figure 3 and Figure 4As shown, the heat dissipation area A of the second circuit layer 23 is roughly located in the middle of the second circuit layer 23, and the edge area B is located outside the heat dissipation area A, wherein the first through hole 221 and the conductor 26 are distributed on the front of the first electronic component 24, that is, located in the heat dissipation area A. The second circuit layer 23 is a redistribution layer formed by using redistribution layer (RDL) technology. The RDL technology can enlarge the spacing of the conductors 26 with a higher distribution density, and lead the conductors 26 corresponding to the heat dissipation area A to the edge area B, so as to facilitate welding the lead terminal 25 in the edge area B, and set the second heat dissipation device 20 in the heat dissipation area A. Specifically, the second circuit layer 23 includes a wire 231, a connection pad 232 and a first metal layer 233. Among them, the connection pad 232 is distributed in the edge area B, one end of the wire 231 is electrically connected to the conductor 26 in the heat dissipation area A, and the other end extends from the heat dissipation area A to the edge area B, and is electrically connected to the connection pad 232 in the edge area B. The first metal layer 233 is located in the heat dissipation area A and is not connected to the wire 231. By adding a large area of ​​the first metal layer 233, a flat surface is provided for the connection of the second heat dissipation device 20, and the large area of ​​the first metal layer 233 can also improve the heat dissipation effect. Through the rewiring design of the second circuit layer 23, the multiple conductors 26 with high density and vertical distribution in the heat dissipation area A are led out through the wire 231 and the multiple connection pads 232 evenly arranged in the edge area B, so as to realize the lead-out of the pins on the multiple first electronic components 24, and facilitate the welding of the lead terminal 25 in the edge area B to realize the lateral lead-out of the lead terminal 25; at the same time, the large area of ​​the first metal layer 233 in the heat dissipation area A of the second circuit layer 23 is exposed, so as to facilitate the connection of the second heat dissipation device 20, thereby achieving the purpose of arranging the second heat dissipation device 20 on the front of the first electronic component 24. In addition, the second circuit layer 23 formed by the RDL technology is thinner, which is beneficial to reducing the thickness of the circuit substrate 2 compared to forming the second circuit layer by a traditional circuit forming method, and further beneficial to making the packaging module 100 thinner and smaller.

[0095] like Figure 3 and Figure 4 As shown, the arrangement of the plurality of connection pads 232 can be set according to the number of pins of the actual first electronic component 24 and the specific position of the lead terminal 25 actually connected, and the plurality of connection pads 232 can be arranged in an array and evenly distributed in the edge area B. The shape and size of the connection pad 232 are not limited, and can be circular, such as Figure 5As shown, it can also be other shapes, such as rectangle, triangle, long strip with a certain aspect ratio, or other irregular shapes. The present application can reasonably arrange the position, size and shape of the connection pad 232 according to the actual number of the first electronic components 24, thereby reducing the layout area of ​​the connection pad 232, reducing the area of ​​the edge area B, and then increasing the area of ​​the heat dissipation area A, so as to improve the heat dissipation efficiency of the packaging module 100.

[0096] The plurality of connection pads 232 may be arranged regularly and evenly, such as Figure 3 As shown, the plurality of connection pads 232 may be arranged in an array. In other embodiments, the plurality of connection pads 232 may also be arranged irregularly or unevenly. Figure 4 As shown, the shape of the plurality of connection pads 232 can be a strip with different aspect ratios, or a circle. Such a design can facilitate the identification of the pins of the first electronic component 24 and prevent the wrong connection between different pins and the lead terminal 25.

[0097] like Figure 2 and Figure 4 As shown, the connection pad 232 is electrically connected to the lead terminal 25 by anisotropic conductive adhesive. The electrical connection between the lead terminal 25 and the connection pad 232 is achieved by affixing the anisotropic conductive adhesive. The connection stability is high. When the lead terminal 25 is bent or shaken, the reliability of the package module 100 will not be reduced. Moreover, affixing the anisotropic conductive adhesive is easy to operate, which can reduce the number of welding times, improve efficiency, and reduce costs. In addition, the thickness of the anisotropic conductive adhesive is relatively thin and will not take up too much space. It can be understood that the connection pad 232 can also be electrically connected to the lead terminal 25 by welding.

[0098] like Figure 2 and Figure 3As shown, a third heat-conducting component 29 is also provided on the first circuit layer 21, and the third heat-conducting component 29 is encapsulated in the first encapsulation layer 22, and the two opposite surfaces of the third heat-conducting component 29 are respectively connected to the first circuit layer 21 and the second circuit layer 23. By adding the third heat-conducting component 29 in the first encapsulation layer 22, the heat accumulated in the first encapsulation layer 22 can be further quickly conducted to the first circuit layer 21 and the second circuit layer 23 through the third heat-conducting component 29, and further conducted to the encapsulation module 100, thereby improving the heat dissipation efficiency inside the first encapsulation layer 22. In this embodiment, a second through hole 222 is provided in the first encapsulation layer 22 corresponding to the third heat-conducting component 29, and a heat conductor 28 is provided in the second through hole 222, wherein the heat conductor 28 is in contact with the third heat-conducting component 29. In this embodiment, the third heat-conducting component 29 can be a metal block, and when the first electronic component 24 is installed, the third heat-conducting component 29 can be attached to the surface of the first circuit layer 21, and specifically, the third heat-conducting component 29 can be fixed on the first circuit layer 21 by means of heat-conducting glue or welding.

[0099] Understandable, such as Figure 6 As shown, in other embodiments, a second electronic component 27 may be further disposed on the second circuit layer 23, and the second electronic component 27 may include one or more active devices, such as active chips, including but not limited to driver chips, power chips, digital chips, radio frequency chips, etc. It can be understood that the second electronic component 27 may also include one or more passive devices, including but not limited to resistors, capacitors, inductors, filters, couplers, etc. In this embodiment, the second electronic component 27 may be a gate-level driver chip, which is electrically connected to the first electronic component 24 through the second circuit layer 23 to achieve the purpose of driving the first electronic component 24.

[0100] like Figure 2 and Figure 3 As shown, a first heat-conducting component 1 is provided between the first circuit layer 21 and the first heat sink 10, which can improve the heat conduction efficiency between the circuit substrate 2 and the first heat sink 10. The first heat-conducting component 1 includes a first insulating heat-conducting layer 11, and a second metal layer 12 located on a first surface 111 of the first insulating heat-conducting layer 11, the first circuit layer 21 is located on a second surface 112 of the first insulating heat-conducting layer 11, the second surface 112 is arranged opposite to the first surface 111, and the first packaging layer 22 is located on the second surface 112.

[0101] The material of the first insulating heat-conducting layer 11 can be a high thermal conductivity insulating resin or insulating ceramic, but is not limited thereto. The second metal layer 12 can be a metal layer. In this embodiment, the first heat-conducting component 1 can be a ceramic copper-clad plate (direct bonding copper, DBC) or an active metal brazing copper-clad plate (active metal bonding, AMB), etc. This type of first heat-conducting component 1 not only has higher thermal conductivity, high bonding strength between the copper layer and the ceramic base layer (such as silicon nitride ceramic), but also has a low thermal expansion coefficient (especially the thermal expansion coefficient of the AMB ceramic copper-clad plate is almost close to that of silicon), which can be applied to high voltage operations without local discharge. It can be understood that the metal layer can be thickened by electroplating on the surface of the metal layer of the original ceramic copper-clad plate to form the second metal layer 12 to achieve a more ideal thermal conductivity effect.

[0102] The circuit substrate 2 is directly formed on the first surface 111 of the first insulating heat-conducting layer 11, and the first circuit layer 21 and the first heat-conducting component 1 are an integral structure. In this embodiment, the first surface 111 and the second surface 112 of the first insulating heat-conducting layer 11 are respectively covered with metal layers, that is, an integral structure including the first circuit layer 21 and the first heat-conducting component 1 is prepared by a double-sided copper-clad laminate. Among them, the metal layer on the first surface 111 of the first insulating heat-conducting layer 11 is used as the second metal layer 12, and a metal layer is provided on the second surface 112 of the first insulating heat-conducting layer 11, and the metal layer is patterned to prepare the first circuit layer 21. The first circuit layer 21 is in close contact with the first heat-conducting component 1 and has a strong bonding force, and has a good heat conduction effect. The first heat-conducting component 1 can quickly export the heat of the first circuit layer 21 to the first heat dissipation device 10, which is beneficial to improving the back heat dissipation efficiency of the first electronic component 24.

[0103] like Figure 2 and Figure 3As shown, a second heat-conducting component 3 is provided between the heat dissipation area A and the second heat dissipation device 20, wherein the second heat-conducting component 3 can improve the heat conduction efficiency between the heat dissipation area A and the second heat dissipation device 20. The second heat-conducting component 3 includes a second insulating heat-conducting layer 31 and a third metal layer 32 located on two opposite surfaces of the second insulating heat-conducting layer 31, wherein the material of the second insulating heat-conducting layer 31 can be a high thermal conductivity insulating resin or insulating ceramic, or other materials that can simultaneously play an insulating and heat-conducting role. The third metal layer 32 is a copper layer. In this embodiment, the second heat-conducting component 3 can be a DBC board, or an AMB board, etc. The DBC board or the AMB board has a high thermal conductivity, a high thermal conductivity efficiency, and a low thermal expansion coefficient (especially the thermal expansion coefficient of the AMB board is almost close to that of silicon), which can be applied to high voltage operation without partial discharge phenomenon. The second heat-conducting component 3 can be connected to the heat dissipation area A through a connecting layer 4. Specifically, the connecting layer 4 can be formed by curing a thermally conductive resin, or can be formed by soldering or silver sintering. It is understandable that the number of the second heat-conducting components 3 can be one or more, and the number of the second heat-conducting components 3 can be set according to the distribution of the first metal layer 233 and the wire 231 in the heat dissipation area A. It is also understandable that Figure 5 As shown, in other embodiments, the number and installation position of the second heat-conducting components 3 can be set according to whether the second electronic components 27 need to be installed on the second circuit layer 23. The second heat-conducting components 3 with the third metal layer 32 on both sides are connected to the circuit substrate 2 through the heat-conducting connection layer 4 to achieve the purpose of insulation and heat conduction. At the same time, multiple second heat-conducting components 3 can be arranged according to the distribution of the heat source inside the circuit substrate 2, and other electronic components (such as the second electronic components 27) can be introduced on the second circuit layer 23, thereby improving the flexibility of the structural design of the packaging module 100.

[0104] like Figure 2 As shown, the packaging module 100 further includes a second packaging layer 30, which encapsulates the first heat-conducting component 1, the circuit substrate 2, and the second heat-conducting component 3, and the surface of the second heat-conducting component 3 away from the second circuit layer 23 and the surface of the first heat-conducting component 1 away from the first circuit layer 21 are exposed in the second packaging layer 30, and the lead terminal 25 extends out of the second packaging layer 30. By adding the second packaging layer 30, the connection stability between the circuit substrate 2, the first heat-conducting component 1 and the second heat-conducting component 3 can be improved, thereby improving the reliability of the packaging module 100.

[0105] The material of the second encapsulation layer 30 is an insulating thermally conductive encapsulation material, which generally includes an insulating resin and an insulating thermally conductive filler. The insulating resin may be selected from one of ABF resin, prepreg (PP), epoxy resin, BT resin, polyphenylene oxide (PPO), polyimide (PI), polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). Specifically, in this embodiment, the insulating resin used in the first encapsulation layer 22 may be epoxy resin, and the insulating thermally conductive filler may be selected from particles such as nano silicon oxide powder, nano silicon nitride powder, nano silicon carbide powder, nano boron nitride powder, and nano aluminum oxide powder. For example, the insulating thermally conductive encapsulation material may be obtained by uniformly dispersing epoxy resin and thermally conductive insulating filler. The epoxy resin is a modified epoxy resin treated with nano silicon dioxide. The thermally conductive insulating material is a modified silicon carbide powder treated with a silane coupling agent. The second packaging layer 30 obtained by filling the thermally conductive insulating material with modified nano-epoxy resin has the characteristics of high thermal conductivity, good dielectric properties, low thermal expansion coefficient, high strength, high hardness, non-toxicity, etc., and is suitable for the packaging of precision electronic components. It can be understood that other materials with high thermal conductivity, good dielectric properties, low thermal expansion coefficient, high strength, high hardness, non-toxicity, etc. can also be applied to the packaging module 100 provided in this application.

[0106] like Figure 2 As shown, the first heat sink 10 and the second heat sink 20 can be air-cooled heat sinks or water-cooled heat sinks, but are not limited thereto. The first heat sink 10 and the second heat sink 20 can be connected to the first heat-conducting component 1 and the second heat-conducting component 3 respectively through a thermally conductive adhesive layer (such as thermally conductive silicone) or a welding layer. In this embodiment, due to the presence of the second encapsulation layer 30, the surface of the second heat-conducting component 3 facing away from the second circuit layer 23 is flush with the surface of the second encapsulation layer 30, providing a flat working surface for the thermally conductive adhesive layer or the welding layer, which is beneficial to improving the connection stability of the second heat sink 20 and at the same time beneficial to improving the heat dissipation efficiency.

[0107] In the packaging module 100 provided in the embodiment of the present application, the second circuit layer 23 is formed by using the rewiring technology on the working surface (i.e., the front surface) where the pins are provided on the first electronic component 24, so that the pins of the first electronic component 24 are conveniently led out to the edge area B of the second circuit layer 23, which is convenient for welding the lead terminal 25, and at the same time, space in the heat dissipation area A is reserved to facilitate the installation of the second heat-conducting component 3, thereby achieving the purpose of setting the second heat dissipation device 20 on the front surface of the first electronic component 24; the first circuit layer 21 is directly formed on the first heat-conducting component 1 with the second metal layer 12, and the non-working surface (i.e., the back surface) of the first electronic component 24 where the pins are not provided is installed on the first circuit layer 21, and the first heat-conducting component 1 is set on the back surface of the first electronic component 24 through the first circuit layer 21, so as to achieve the purpose of connecting with the first heat dissipation device 10. The packaging module 100 of the present application achieves double-sided heat dissipation of the first electronic component 24 without affecting the pin lead-out of the first electronic component 24, thereby improving the heat dissipation efficiency of the packaging module 100, thereby improving the working efficiency and service life of the packaging module 100, and is conducive to the development of the packaging module 100 towards high density and lightness. The packaging module 100 provided by the present application is not only suitable for silicon-based high-power modules, but also for third-generation semiconductor chips, which can effectively improve the heat dissipation efficiency of the power module, thereby improving the working efficiency and performance reliability of the power module.

[0108] See also Figure 7 The packaging module 200 of another embodiment of the present application is structurally different from the packaging module 100 in the aforementioned embodiment in that: the second heat-conducting component 3a in the packaging module 200 in this embodiment includes a second insulating heat-conducting layer 31a in contact with the second circuit layer 23, and a third metal layer 32a arranged on the surface of the second insulating heat-conducting layer 31a away from the second circuit layer 23, and the number of the second heat-conducting component 3a is one, and it covers the heat dissipation area A of the second circuit layer 23.

[0109] In this embodiment, the second heat-conducting component 3a is directly pressed on the surface of the second circuit layer 23, and does not need to be connected to the second circuit layer 23 by means of heat-conducting adhesive or welding. The second heat-conducting component 3a can be a DBC board or an AMB board, and the third metal layer 32a can be thickened by electroplating to achieve the best heat dissipation effect.

[0110] Compared with the aforementioned embodiments, the second heat-conducting component 3a in the packaging module 200 of the present embodiment can fully cover the heat dissipation area A without any gaps, thereby increasing the contact area between the second heat-conducting component 3a and the second circuit layer 23, effectively improving the heat dissipation efficiency, and the second heat-conducting component 3a is directly pressed on the surface of the second circuit layer 23 without the need for an intermediate connecting layer, thereby simplifying the process and improving the bonding strength between the second heat-conducting component 3a and the second circuit layer 23, thereby improving the stability of the packaging module 200 and facilitating reducing the thickness of the packaging module 200.

[0111] like Fig. 8A As shown, an embodiment of the present application also provides a method for preparing the above-mentioned packaging module 100, which includes the following steps (it is understood that the following steps can be combined with the attached FIG. 9A to FIG. 9G ).

[0112] S1. Provide a circuit substrate 2, wherein the circuit substrate 2 includes a first circuit layer 21, a first packaging layer 22 and a second circuit layer 23 stacked in sequence, wherein the first circuit layer 21 is electrically connected to a first electronic component 24, the second circuit layer 23 includes a heat dissipation area A and an edge area B connected to the heat dissipation area A, the first electronic component 24 is also electrically connected to the heat dissipation area A, and the edge area B is electrically connected to a lead terminal 25, and the first packaging layer 22 encapsulates the first electronic component 24 and the first circuit layer 21.

[0113] S2, disposing a first heat dissipation device 10 on a surface of the first circuit layer 21 away from the first electronic component 24 .

[0114] S3 , disposing a second heat dissipation device 20 on the surface of the heat dissipation area A away from the first electronic component 24 , thereby obtaining the packaging module 100 .

[0115] Step S1 please refer to Figure 8B , combined with reference FIG. 9A to FIG. 9G A first heat-conducting component 1 is provided between the first circuit layer 21 and the first heat sink 10, and the method for preparing the circuit substrate 2 comprises the steps of:

[0116] S11: Fig. 9A and Fig. 9B As shown, the first circuit layer 21 is formed on the surface of the first heat conducting component 1 .

[0117] like Fig. 9A As shown, a double-sided substrate 50 is provided. The double-sided substrate 50 includes a first heat-conducting component 1 and a first copper layer 13 , wherein the first copper layer 13 is disposed on the second surface 112 of the first insulating heat-conducting layer 11 .

[0118] like Fig. 9BAs shown, the first copper layer 13 is patterned to form a first circuit layer 21 .

[0119] The first copper layer 13 is patterned by lamination, exposure, development and etching to form a first circuit layer 21 .

[0120] S12, such as Fig. 9C As shown, the first electronic component 24 is electrically connected to the surface of the first circuit layer 21 .

[0121] The first electronic component 24 is soldered to the corresponding position of the first circuit layer 21 by flip-chip soldering.

[0122] While the first electronic component 24 is installed on the first circuit layer 21, a third heat conducting component 29 may also be provided on the first circuit layer 21. In this embodiment, the third heat conducting component 29 may be a metal block and may be mounted on the first circuit layer 21 by welding.

[0123] S13, such as Fig.9D As shown, the first packaging layer 22 is formed on the surface of the first heat conducting component 1 , so that the first packaging layer 22 encapsulates the first electronic component 24 and the first circuit layer 21 .

[0124] S14, such as Fig.9E As shown, the second circuit layer 23 is formed on the surface of the first packaging layer 22 facing away from the first heat conducting component 1 , and the second circuit layer 23 is electrically connected to the first electronic component 24 .

[0125] A first through hole 221 is formed on the first packaging layer 22 above the first electronic component 24, and a conductor 26 is formed in the first through hole 221. The pins on the first electronic component 24 are led out through the conductor 26 to realize the electrical connection between the first electronic component 24 and the second circuit layer 23. The heat dissipation area A is roughly located in the middle of the second circuit layer 23, the edge area B is located on the side of the heat dissipation area A, the conductor 26 is arranged corresponding to the heat dissipation area A, and the second circuit layer 23 includes a wire 231, a connection pad 232 and a first metal layer 233. Among them, the connection pad 232 is distributed in the edge area B, one end of the wire 231 is electrically connected to the conductor 26 in the heat dissipation area A, and the other end extends from the heat dissipation area A to the edge area B, and is electrically connected to the connection pad 232 in the edge area B. The first metal layer 233 is located in the heat dissipation area A and is not conductive with the wire 231. It is understandable that a second through hole 222 can be set at a position of the first packaging layer 22 corresponding to the third heat conducting component 29, and a heat conductor 28 can be set in the second through hole 222 so that the heat conductor 28 contacts the third heat conducting component 29 to achieve the purpose of conducting heat inside the first packaging layer 22.

[0126] The second circuit layer 23 is a rewiring layer formed by rewiring technology. First, the first through hole 221 and the second through hole 222 are formed on the first packaging layer 22. Then, the conductor 26 and the heat conductor 28 are formed in the first through hole 221 and the second through hole 222 respectively by electroplating. Then, a copper layer is formed by electroplating on the surface of the first packaging layer 22 away from the first heat-conducting component 1. Finally, the second circuit layer 23 is formed by lamination, exposure, development and etching. The RDL technology can enlarge the spacing of the conductors 26 with a higher distribution density, and lead the conductors 26 corresponding to the heat dissipation area A to the edge area B, so as to facilitate the subsequent welding of the lead terminal 25 in the edge area B and the setting of the second heat-conducting component 3 in the heat dissipation area A. The second circuit layer 23 formed by the RDL technology is thinner, which is conducive to reducing the total thickness of the circuit substrate 2 compared with the second circuit layer formed by the traditional circuit forming method.

[0127] In this embodiment, the first through hole 221 and the second through hole 222 can be formed by laser drilling or mechanical drilling, the conductor 26 can be formed by copper electroplating or by filling conductive paste and curing, and the thermal conductor 28 can be formed by copper electroplating, by filling conductive paste and curing, or by filling other thermal conductive materials and curing.

[0128] S15, such as Fig.9F As shown, the lead terminal 25 is provided on the edge area B of the second circuit layer 23 so that the lead terminal 25 is electrically connected to the second circuit layer 23 , thereby forming the circuit substrate 2 on the surface of the first heat-conducting component 1 .

[0129] The lead terminal 25 can be connected to the connection pad 232 by applying anisotropic conductive adhesive or welding.

[0130] After the circuit substrate 2 is formed on the surface of the first heat-conducting component 1, the method for preparing the packaging module 100 further includes the following steps:

[0131] A second heat conducting component 3 is disposed on the heat dissipation area A of the second circuit layer 23 .

[0132] The second heat-conducting component 3 can be connected to the second circuit layer 23 through the connecting layer 4, wherein the connecting layer 4 can be a heat-conducting adhesive layer (such as heat-conducting silicone) or a welding layer. In this embodiment, the second heat-conducting component 3 is attached to the surface of the second circuit layer 23 through the heat-conducting silicone, which is conducive to simplifying the process, reducing the number of welding times, improving molding efficiency, reducing costs, and at the same time, it is conducive to improving the stability of the packaging module 100.

[0133] By directly molding the circuit substrate 2 on the surface of the first heat-conducting component 1 and installing the second heat-conducting component 3, a whole including the circuit substrate 2, the first heat-conducting component 1 and the second heat-conducting component 3 can be molded in one step. The molding method is simple, easy to implement, and convenient for mass production. In addition, the number of welding times in the entire process is small, the molding efficiency is high, and the reliability of the packaging module 100 is high.

[0134] like Figure 9G As shown, before providing the first heat dissipation device 10 and the second heat dissipation device 20, the method for preparing the packaging module 100 further includes the steps of:

[0135] A second packaging layer 30 is provided for packaging the first heat-conducting component 1, the circuit substrate 2 and the second heat-conducting component 3. The surface of the first heat-conducting component 1 facing away from the circuit substrate 2 and the surface of the second heat-conducting component 3 facing away from the circuit substrate 2 are exposed in the second packaging layer 30, and the lead terminal 25 extends out of the second packaging layer 30.

[0136] By adding the second packaging layer 30 , the stability of the packaging module 100 can be improved.

[0137] Please refer to step S2 and step S3 together. Figure 2 The first heat sink 10 and the second heat sink 20 can be connected to the first heat conducting component 1 and the second heat conducting component 3 respectively through a heat conducting layer or a welding layer.

[0138] The preparation method of the packaging module 100 provided in the present application forms a circuit substrate 2 directly on the surface of the first heat-conducting component 1, and the circuit substrate 2 includes a first circuit layer 21 and a second circuit layer 23, wherein the first circuit layer 21 is convenient for mounting the first heat dissipation device 10 on the back side of the first electronic component 24; the second circuit layer 23 is formed by a rewiring technology, which is convenient for leading the high-density pins of the first electronic component 24 to the edge area B of the second circuit layer 23 on the front side of the first electronic component 24, and reserving the heat dissipation area A of the second circuit layer 23 for mounting the second heat-conducting component 3, so as to achieve the purpose of mounting the second heat dissipation device 20 on the front side of the first electronic component 24, thereby enabling the packaging module 100 to achieve double-sided heat dissipation without affecting the mounting of the lead terminal 25, effectively improving the heat dissipation effect, and the second circuit layer 23 formed by the rewiring technology is thinner, which is beneficial to reducing the total thickness of the circuit substrate 2 compared with the second circuit layer formed by the traditional circuit forming method, thereby facilitating the packaging module 100 to be thinner and smaller. The preparation method of the packaging module 100 of the present application is simple in process, relatively easy to implement, low in cost, and convenient for mass production. In addition, the number of welding times in the entire process is small, the molding efficiency is high, and the reliability of the packaging module 100 is improved.

[0139] See also Figure 8C Another embodiment of the present application further provides a method for preparing a packaging module 200. The difference between the method for preparing the packaging module 200 of this embodiment and the method for preparing the packaging module 100 of the aforementioned embodiment is that: a first heat-conducting component 1 is provided between the first circuit layer 21 and the first heat dissipation device 10, a second heat-conducting component 3a is provided between the heat dissipation area A and the second heat dissipation device 20, and the method for preparing the circuit substrate 2 and the connection method between the circuit substrate 2 and the first heat-conducting component 1 and the second heat-conducting component 3a are different. The method for preparing the packaging module 200 of this embodiment includes the following steps:

[0140] S1a, in conjunction with Fig.10 The first heat-conducting component 1, the circuit substrate 2 and the second heat-conducting component 3a are sequentially stacked and pressed together.

[0141] It is understandable that after the first heat conducting component 1 and the second heat conducting component 3a are pressed together, the second metal layer 12 on the first heat conducting component 1 and the third metal layer 32a on the second heat conducting component 3a may be electroplated and thickened according to actual needs.

[0142] S2a, in conjunction with Figure 7 A first heat dissipation device 10 is disposed on a surface of the first heat-conducting component 1 that is away from the circuit substrate 2 .

[0143] S3a, in conjunction with Figure 7 A second heat dissipation device 20 is disposed on the surface of the second heat-conducting component 3 a away from the circuit substrate 2 , thereby obtaining the packaging module 200 .

[0144] The installation of the first heat dissipation device 10 and the second heat dissipation device 20 may refer to the method of the aforementioned embodiment.

[0145] Step S1a, see Fig.8D , combined with reference FIG. 11A to FIG. 11D The specific formation method of the circuit substrate 2 includes the following steps:

[0146] S11a, such as Fig.11A As shown, a second copper layer 43 is formed on the surface of the release layer 42 of the carrier 40 .

[0147] The carrier 40 includes a substrate layer 41 and the peeling layer 42 located on at least one surface of the substrate layer 41 . The second copper layer 43 is formed on the surface of the peeling layer 42 away from the substrate layer 41 .

[0148] The base material layer 41 is a carrier plate for forming the circuit substrate 2, and the material of the base material layer 41 is not limited. The peeling layer 42 serves to temporarily bond the base material layer 41 and the second copper layer 43, and the peeling layer 42 is an insulating material, and the peeling layer 42 can be made of a colloid that is easily separated or removed in subsequent processing.

[0149] Step S12a: Fig. 11B As shown, the second copper layer 43 is patterned to form the first circuit layer 21 .

[0150] Specifically, the first circuit layer 21 is formed by coating the surface of the second copper layer 43 and sequentially performing exposure, development and etching.

[0151] Step S13a: Fig. 11C As shown, the first electronic component 24 is electrically connected to the surface of the first circuit layer 21 .

[0152] The mounting method of the first electronic component 24 may refer to the aforementioned method.

[0153] Step S14a: Fig. 11C As shown, a first packaging layer 22 is formed on the surface of the peeling layer 42 , so that the first packaging layer 22 encapsulates the first electronic component 24 and the first circuit layer 21 .

[0154] Step S15a: Fig. 11C As shown, a second circuit layer 23 is formed on the surface of the first packaging layer 22 away from the peeling layer 42 , and the second circuit layer 23 is electrically connected to the first circuit layer 21 .

[0155] The molding method of the second circuit layer 23 can be found in the above method.

[0156] Step S16a: Fig.11D As shown, the lead terminal 25 is electrically connected to the second circuit layer 232 .

[0157] Step S17a: Fig.11D As shown, the carrier board 40 is removed to obtain the circuit substrate 2 .

[0158] It is understandable that a third heat conducting component 29 may be provided on the first circuit layer 21 and a second electronic component 27 may be provided on the second circuit layer 23 . For specific methods, please refer to the aforementioned embodiment.

[0159] Before providing the first heat dissipation device 10 and the second heat dissipation device 20, the method for preparing the packaging module 200 further includes the following steps:

[0160] A second packaging layer 30 is provided for packaging the first heat-conducting component 1, the circuit substrate 2 and the second heat-conducting component 3a. The surface of the first heat-conducting component 1 facing away from the circuit substrate 2 and the surface of the second heat-conducting component 3a facing away from the circuit substrate 2 are exposed in the second packaging layer 30, and the lead terminal 25 extends out of the second packaging layer 30.

[0161] First, a circuit substrate 2 having a first circuit layer 21 and a second circuit layer 23 is prepared, and then the first heat-conducting component 1 and the second heat-conducting component 3a are pressed on the surfaces of the first circuit layer 21 and the second circuit layer 23 by pressing. The molding method is simple, which further reduces the number of welding times and improves the molding efficiency and reliability of the packaging module 200. In addition, the circuit substrate 2 is molded separately, which further simplifies the molding process and reduces the molding difficulty of the packaging module 100. Moreover, the circuit substrate 2 has high versatility, and the pressing efficiency with the second heat-conducting component 3a and the first heat-conducting component 1 is improved, thereby improving the molding efficiency of the packaging module 100 and improving the product yield.

[0162] like Fig.12 As shown, the present application also provides an electronic device 300, which includes a shell 301 and a high-power packaging module 100 (or 200) as described above located in the shell 301. The electronic device 300 can be a vehicle power supply, a photovoltaic inverter, a site energy source, and an industrial motor drive, etc. In this embodiment, the electronic device 300 is an electric vehicle charging pile.

[0163] It should be noted that the above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application; the implementation methods of the present application and the features in the implementation methods can be combined with each other without conflict. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A packaging module, characterized in that: include: A circuit substrate, comprising a first circuit layer, a first packaging layer and a second circuit layer stacked in sequence, wherein a first electronic component is electrically connected to the first circuit layer, the second circuit layer is a rewiring layer, the second circuit layer comprises a heat dissipation area and an edge area connected to the heat dissipation area, the first electronic component is electrically connected to the heat dissipation area via a conductor penetrating the first packaging layer, a lead terminal is electrically connected to the edge area, the first packaging layer encapsulates the first electronic component and the first circuit layer, wherein the lead terminal is located on a surface of the second circuit layer away from the first circuit layer, the second circuit layer comprises a wire and a first metal layer, two ends of the wire are electrically connected to the conductor and the lead terminal respectively, and the first metal layer is located in the heat dissipation area and is not conductive to the wire; A first heat dissipation device is located on a surface of the first circuit layer facing away from the first electronic component; and A second heat sink is located on the surface of the heat sink area away from the first electronic component. A second heat conduction component is provided between the heat sink area and the second heat sink. The second heat conduction component is respectively connected to the first metal layer and the second heat sink.

2. The packaging module according to claim 1, characterized in that: A first heat-conducting component is provided between the first circuit layer and the first heat dissipation device.

3. The packaging module according to claim 2, characterized in that: The packaging module also includes a second packaging layer, which encapsulates the first heat-conducting component, the circuit substrate and the second heat-conducting component. The surface of the first heat-conducting component facing away from the circuit substrate and the surface of the second heat-conducting component facing away from the circuit substrate are exposed in the second packaging layer, and the lead terminal extends out of the second packaging layer.

4. The packaging module according to claim 3, characterized in that: The lead terminal extends from a side wall of the second packaging layer.

5. The packaging module according to claim 1, characterized in that: A third heat-conducting component encapsulated in the first encapsulation layer is also provided on the first circuit layer, and the third heat-conducting component is respectively connected to the first circuit layer and the second circuit layer.

6. The packaging module according to claim 1, characterized in that: The second circuit layer is also electrically connected to a second electronic component.

7. The packaging module according to claim 2, characterized in that: The first heat-conducting component includes a first insulating heat-conducting layer and a second metal layer stacked together, and the first insulating heat-conducting layer is located between the first circuit layer and the second metal layer.

8. The packaging module according to claim 1, characterized in that: The second heat-conducting component includes a second insulating heat-conducting layer and a third metal layer stacked together, and the second insulating heat-conducting layer is located between the second circuit layer and the third metal layer.

9. The packaging module according to claim 1, characterized in that: The second heat-conducting component includes a second insulating heat-conducting layer and two third metal layers located on two opposite surfaces of the second insulating heat-conducting layer. One of the third metal layers is connected to the second circuit layer via a connecting layer, and the material of the connecting layer is a heat-conducting material.

10. A method for preparing a packaging module, characterized in that: Includes steps: A circuit substrate is provided, the circuit substrate comprising a first circuit layer, a first packaging layer and a second circuit layer stacked in sequence, the first circuit layer being electrically connected to a first electronic component, the second circuit layer being formed by adopting a rewiring technology, the second circuit layer comprising a heat dissipation area and an edge area connected to the heat dissipation area, the first electronic component being electrically connected to the heat dissipation area via a conductor penetrating the first packaging layer, the edge area being electrically connected to a lead terminal, the first packaging layer packaging the first electronic component and the first circuit layer, wherein the lead terminal is located on a surface of the second circuit layer away from the first circuit layer, the second circuit layer comprising a wire and a first metal layer, two ends of the wire being electrically connected to the conductor and the lead terminal respectively, and the first metal layer being located in the heat dissipation area and not conducting with the wire; Disposing a first heat dissipation device on a surface of the first circuit layer away from the first electronic component; Disposing a second heat-conducting component on a surface of the heat-dissipating area away from the first electronic component, wherein the second heat-conducting component is connected to the first metal layer; and A second heat dissipation device is arranged on a surface of the second heat-conducting component away from the heat dissipation area, thereby obtaining the packaging module.

11. The method for preparing a packaging module according to claim 10, characterized in that: A first heat-conducting component is provided between the first circuit layer and the first heat sink, and the method for preparing the circuit substrate comprises the steps of: forming the first circuit layer on the surface of the first heat conducting component; electrically connecting the first electronic component to the surface of the first circuit layer; forming the first packaging layer on the surface of the first heat-conducting component, so that the first packaging layer encapsulates the first electronic component and the first circuit layer; forming the second circuit layer on the surface of the first packaging layer facing away from the first heat-conducting component, and electrically connecting the second circuit layer to the first electronic component; as well as The lead terminal is disposed on the edge region of the second circuit layer so as to electrically connect the lead terminal to the second circuit layer, thereby forming the circuit substrate on the surface of the first heat-conducting component.

12. The method for preparing a packaging module according to claim 10, characterized in that: A first heat-conducting component is provided between the first circuit layer and the first heat dissipation device, and a second heat-conducting component is provided between the heat dissipation area and the second heat dissipation device. After obtaining the circuit substrate, the method for preparing the packaging module further comprises the steps of: The first heat-conducting component, the circuit substrate, and the second heat-conducting component are sequentially stacked and pressed together.

13. The method for preparing a packaging module according to claim 12, characterized in that: The method for preparing the circuit substrate comprises the steps of: forming a second copper layer on the surface of the release layer of the carrier; patterning the second copper layer to form the first circuit layer; electrically connecting the first electronic component to the surface of the first circuit layer; forming the first packaging layer on the surface of the peeling layer, so that the first packaging layer encapsulates the first electronic component and the first circuit layer; forming the second circuit layer on the surface of the first packaging layer facing away from the peeling layer, and electrically connecting the second circuit layer to the first circuit layer; electrically connecting the lead terminal on the second circuit layer; as well as The carrier is removed to obtain the circuit substrate.

14. The method for preparing a packaging module according to claim 11 or 13, characterized in that: Before forming the first encapsulation layer, the method for preparing the circuit substrate further comprises the steps of: A third heat conducting component is disposed on the first circuit layer, and the third heat conducting component is connected to the first circuit layer.

15. The method for preparing a packaging module according to claim 11 or 13, characterized in that: After forming the second circuit layer, the method for preparing the packaging module further comprises the steps of: A second electronic component is electrically connected to the second circuit layer.

16. The method for preparing a packaging module according to claim 11, characterized in that: Before providing the first heat dissipation device and the second heat dissipation device, the method for preparing the packaging module further comprises the steps of: A second packaging layer is provided for packaging the first heat-conducting component, the circuit substrate and the second heat-conducting component, the surface of the first heat-conducting component facing away from the circuit substrate and the surface of the second heat-conducting component facing away from the circuit substrate are exposed in the second packaging layer, and the lead terminal extends out of the second packaging layer.

17. An electronic device, characterized in that: The invention comprises a shell and a packaging module as claimed in any one of claims 1 to 9 located in the shell.

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