Display panel and method for manufacturing the same

By forming a light-transmitting modification layer and a black modification layer on the base film of the display panel, the LED chip is directly molded, which solves the problems of complex process and uneven surfaces in the prior art, and improves the preparation efficiency and display effect.

CN114497294BActive Publication Date: 2024-12-31SHENZHEN TCL NEW-TECH CO LTD
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Patent Information

Application Number
CN202210094429.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-01-26
Publication Date
2024-12-31
Estimated Expiration
2042-01-26

AI Technical Summary

Technical Problem

During the preparation process of Mini-LED or Micro-LED display panels, the process in the prior art is complex and the surface of the black matrix or vinyl layer is inconsistent, which affects the display effect and leads to low preparation efficiency.

Method used

By setting the light-transmissive layer and the black layer on the base film in turn, and performing pre-crosslinking processing to form the light-transmissive layer and the black modification layer, the substrate of the LED chip is directly buckled on the black modification layer, and the LED is molded to make The chip penetrates through the black modified layer and is partially located in the light-transmitting modified layer to avoid etching processes and simplify the process flow.

Benefits of technology

The surface flatness of the black modified layer is improved, the number of molding processes is reduced, and the preparation efficiency and display effect of the display panel are improved.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present application provides a display panel and a method for preparing the same. Through the semi-cured light-transmitting modified layer and the black modified layer formed by pre-crosslinking treatment, the user can directly buckle the substrate with the LED chip installed on the black modified layer; then mold the substrate so that the LED chip penetrates the semi-cured black modified layer and is partially located in the light-transmitting modified layer. In this way, the LED chip part located in the light-transmitting modified layer can emit light for display; it also avoids the need to use an etching process to process the black glue layer in the traditional process, improves the surface flatness of the black modified layer; and compared with the prior art, it also reduces one molding process, thereby improving the preparation efficiency of the display panel.
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Description

Technical Field

[0001] The present application relates to the technical field of display devices, and in particular to a display panel and a method for preparing the same. Background Art

[0002] In the field of Mini-LED or Micro-LED display panel preparation, a black matrix is ​​usually coated on a PCB board with multiple Mini-LED chips or Micro-LED chips installed in an array on the surface, or the chip is embedded in a pre-made black glue layer through molding and other processes; then part of the black material on the surface of the black matrix or the black glue layer is etched away to expose the chip; finally, a transparent glue layer is molded on the chip, or a transparent film layer is attached to the chip for packaging to make a direct display panel.

[0003] Among them, the etching process in the preparation process easily leads to the inconsistency of the surface height of the black matrix or the black glue layer, which affects the display effect of the display panel. In addition, the process is complicated, resulting in low preparation efficiency of the display panel. Summary of the invention

[0004] The present application provides a display panel and a method for manufacturing the same, so as to solve the technical problem of low manufacturing efficiency of the display panel in the prior art.

[0005] In one aspect, the present application provides a method for preparing a display panel, comprising:

[0006] providing a base film;

[0007] A light-transmitting layer and a black layer are sequentially arranged on one side of the base film;

[0008] Pre-crosslinking the light-transmitting layer and the black layer, so that the light-transmitting layer forms a light-transmitting modified layer, and the black layer forms a black modified layer;

[0009] A substrate with a plurality of LED chips mounted in a surface array is arranged on the black modified layer, and the substrate is molded so that the LED chips penetrate the black modified layer and at least part of the LED chips are located in the light-transmitting modified layer.

[0010] The light-transmitting modified layer and the black modified layer are cured.

[0011] In a possible implementation of the present application, after the step of forming the black layer into a black modified layer, the method includes:

[0012] A microstructure is formed on the surface of the black modified layer, and the microstructure is arranged corresponding to the LED chip.

[0013] In a possible implementation of the present application, in the step of forming a microstructure on the surface of the black modified layer, the method includes:

[0014] The surface of the black modified layer is cut to form a plurality of separation lines on the surface of the black modified layer.

[0015] In a possible implementation of the present application, the dividing line includes a plurality of first dividing lines arranged in parallel at intervals, and / or a plurality of second dividing lines arranged in parallel at intervals;

[0016] An included angle between an extension direction of the first dividing line and an extension direction of the second dividing line is B, wherein B satisfies: 60°≤B≤120°.

[0017] In a possible implementation of the present application, in the step of sequentially providing a light-transmitting layer and a black layer on one side of the base film, the method includes:

[0018] Provide translucent glue and black glue;

[0019] Softening the light-transmitting glue and the black glue;

[0020] The light-transmitting layer and the black layer are sequentially coated on one side of the base film.

[0021] In a possible implementation of the present application, the optical transmittance of the base film is E, wherein E satisfies: 30%≤E≤70%.

[0022] In a possible implementation of the present application, before sequentially providing a light-transmitting layer and a black layer on one side of the base film, the method includes:

[0023] A reduction layer is disposed on the base film, wherein the reduction layer is disposed on a side of the base film close to the light-transmitting layer and / or a side of the base film away from the light-transmitting layer.

[0024] In a possible implementation of the present application, after providing a reduction layer on the base film, the method includes:

[0025] When the reflection reduction layer is disposed on the side of the base film close to the light-transmitting layer, a protective layer is disposed on the side of the base film away from the light-transmitting layer; or

[0026] When the reflection reduction layer is disposed on a side of the base film away from the light-transmitting layer, the protective layer is disposed on a side of the reflection reduction layer away from the base film.

[0027] In a possible implementation of the present application, the material of the protective layer includes at least one of Al2O3 and SiO2; and / or

[0028] The material of the reduction layer includes at least one of SiO2 and SiN; and / or

[0029] The material of the base film is one of PET, PC or PI; and / or

[0030] The materials of the light-transmitting layer and the black layer are both silicone-modified epoxy resins. The black layer contains at least one filler selected from nano carbon black and graphite, and the content of the nano carbon black and / or the graphite is D, wherein D satisfies: 2%≤D≤5%.

[0031] On the other hand, the present application also provides a display panel, which is prepared by the above-mentioned preparation method.

[0032] The present application provides a display panel and a preparation method thereof. Through the semi-cured light-transmitting modified layer and the black modified layer formed by pre-crosslinking treatment, the user can directly buckle the substrate with the LED chip installed on the black modified layer; then mold the substrate so that the LED chip penetrates the semi-cured black modified layer and is partially located in the light-transmitting modified layer. In this way, the LED chip part located in the light-transmitting modified layer can emit light and display; it also avoids the need to use an etching process to process the black glue layer in the traditional process, improves the surface flatness of the black modified layer; and compared with the prior art, it also reduces one molding process, thereby improving the preparation efficiency of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0034] Figure 1 A flow chart of a method for preparing a display panel provided in an embodiment of the present application;

[0035] Figure 2 A schematic diagram of the structure of an embodiment of a display panel provided in an embodiment of the present application;

[0036] Figure 3 A schematic diagram of the structure of another embodiment of a display panel provided in an embodiment of the present application;

[0037] Figure 4 A top view of a black modified layer having a surface microstructure provided in an embodiment of the present application.

[0038] Reference numerals:

[0039] The display panel 100 , the substrate 200 , the LED chip 300 , the black modified layer 400 , the microstructure 410 , the separation line 420 , the first separation line 421 , the second separation line 422 , the light-transmitting modified layer 500 , the base film 600 , the reflection reduction layer 700 , and the protective layer 800 . DETAILED DESCRIPTION

[0040] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0041] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0042] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0043] In the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0044] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the various specific processes and material examples provided by the present application, but those of ordinary skill in the art can appreciate the application of other processes and / or the use of other materials.

[0045] Please refer to Figures 1 to 4 The present invention provides a method for manufacturing a display panel 100, comprising the following steps:

[0046] A base film 600 is provided.

[0047] It should be noted that the base film 600 is used to support and install other film layers in the display panel 100, such as the reflection reduction layer 700 and / or the protective layer 800, etc., and it usually has a certain light transmittance.

[0048] Specifically, the base film 600 is made of materials such as PET, PC, or PI.

[0049] The base film 600 is made of the above materials, which can ensure the light transmittance of the base film 600 ; and can provide the base film 600 with a certain bending ability, thereby extending the service life of the base film 600 .

[0050] Preferably, the optical transmittance of the base film 600 is 30% to 70%.

[0051] By adding nano carbon black or black dye fillers such as graphite into the base film 600 , the light transmittance of the base film 600 can be reduced, thereby improving the display uniformity of the display panel 100 .

[0052] Furthermore, in some other embodiments, the optical transmittance of the base film 600 may be greater than 70%, or even 100%, etc., which is not excessively limited herein.

[0053] Specifically, the thickness of the base film 600 is not greater than 100 μm, which can reduce the overall thickness of the display panel 100 .

[0054] In the embodiment of the present application, after completing the above steps, a light-transmitting layer and a black layer are sequentially disposed on one side of the base film 600 .

[0055] In the prior art, a black matrix is ​​usually coated on the substrate 200 on which a plurality of LED chips 300 are arrayed, or the LED chips 300 are embedded in a prefabricated black glue layer by molding or other processes; then a portion of the black material on the surface of the black matrix or the black glue layer is etched away to expose the LED chips 300; finally, a transparent glue layer is molded on the LED chips 300, or a transparent film layer is attached to the LED chips 300 for packaging. The process is complicated, and the etching process easily leads to inconsistent surface heights of the black matrix or the black glue layer, which affects the display effect of the display panel 100.

[0056] Specifically, the materials of the light-transmitting layer and the black layer are both silicone-modified epoxy resin, and the black layer contains at least one filler of nano carbon black or graphite, and the content of nano carbon black and / or graphite is D, wherein D satisfies: 2%≤D≤5%.

[0057] It is understandable that the main materials constituting the light-transmitting layer and the black layer are the same, and the silicone-modified epoxy resin is a transparent material. By filling the black layer with nano carbon black or graphite, the optical transmittance of the black layer can be reduced; accordingly, when the LED chip 300 emits light, the black layer can better absorb and block the light of the LED chip 300 from entering the substrate 200, avoiding the chaotic scattering of multiple light rays, and at the same time, the part of the LED chip 300 located in the transparent light-transmitting layer emits light, thereby improving the display effect of the display panel 100.

[0058] Furthermore, in other embodiments, the filler filled in the black layer can be any other black dye or composition, etc., as long as the black layer can absorb and block light well, and no excessive restrictions are made here.

[0059] Furthermore, in some other embodiments, D may also satisfy: 0.5%≤D<2%, or 5%<D≤20%, etc., which are not excessively limited here.

[0060] In some embodiments, the method further includes: providing a light-transmitting glue and a black glue; softening the light-transmitting glue and the black glue; and sequentially coating a light-transmitting layer and a black layer on one side of the base film 600 .

[0061] It should be noted that the organosilicon-modified epoxy resin is mostly solid at room temperature, wherein the solid organosilicon-modified epoxy resin is a light-transmitting glue, and the solid organosilicon-modified epoxy resin doped with a black dye is a black glue.

[0062] By heating and softening the light-transmitting glue and the black glue, the staff can conveniently wet-coat the light-transmitting layer and the black layer on the base film 600, thereby improving the preparation efficiency of the display panel 100; and the surface of the light-transmitting layer and the black layer formed by coating is relatively smooth, which can reduce the refraction of light and improve the display effect of the display panel 100.

[0063] Specifically, the softening temperature of the light-transmitting glue and the black glue is 30°C to 100°C.

[0064] Specifically, the thickness of the light-transmitting layer is 5 μm to 50 μm, and the thickness of the black layer is 30 μm to 100 μm.

[0065] Furthermore, in other embodiments, the user may select light-transmitting layers and black layers within a suitable thickness range according to actual needs, and no excessive limitations are imposed herein.

[0066] In some embodiments, before sequentially setting a light-transmitting layer and a black layer on one side of the base film 600, the preparation method further includes: setting a reduction layer 700 on the base film 600, wherein the reduction layer 700 is set on a side of the base film 600 close to the light-transmitting layer, and / or a side of the base film 600 away from the light-transmitting layer.

[0067] It should be noted that the reflection reduction layer 700 is used to reduce the reflection of light.

[0068] By arranging the reflection reduction layer 700 on the side of the base film 600 close to the light-transmitting layer and / or the side of the base film 600 away from the light-transmitting layer, that is, away from the LED chip 300 and close to the light-emitting side of the display panel 100, the re-reflection of the ambient light incident into the display panel 100 can be reduced, thereby reducing the glare phenomenon of the display panel 100 and improving the display contrast and display effect of the display panel 100.

[0069] Optionally, the reduction layer 700 may be disposed on any side surface of the base film 600 .

[0070] Specifically, the material of the reduction layer 700 includes at least one of SiO 2 and SiN, and the reduction layer 700 is prepared on the base film 600 by dry evaporation or wet coating.

[0071] Preferably, the anti-reflection layer 700 may be an AR anti-reflection film.

[0072] In some embodiments, after the reduction layer 700 is set on the base film 600, the preparation method further includes: when the reduction layer 700 is set on the side of the base film 600 close to the light-transmitting layer, a protective layer 800 is set on the side of the base film 600 away from the light-transmitting layer; or when the reduction layer 700 is set on the side of the base film 600 away from the light-transmitting layer, a protective layer 800 is set on the side of the reduction layer 700 away from the base film 600.

[0073] By setting a protective layer 800 on the side away from the LED chip 300 and close to the light emitting side of the display panel 100, that is, setting the protective layer 800 on the outermost side of the display panel 100, the surface hardness of the display panel 100 can be significantly improved, the impact of external impurities and / or falling on the display panel 100 can be reduced, and the service life of the display panel 100 can be extended.

[0074] Specifically, the material of the protective layer 800 includes at least one of Al 2 O 3 and SiO 2 , and the protective layer 800 is prepared on the base film 600 or the subtraction layer 700 by dry evaporation.

[0075] Furthermore, in some other embodiments, the protective layer 800 may also be made of UV-curable modified polyurethane material, which is not limited here.

[0076] In the embodiment of the present application, after completing the above steps, the light-transmitting layer and the black layer are pre-crosslinked, the light-transmitting layer forms a light-transmitting modified layer 500 , and the black layer forms a black modified layer 400 .

[0077] After the pre-crosslinking treatment, the light-transmitting layer and the black layer are partially solidified, and the light-transmitting modified layer 500 and the black modified layer 400 are formed respectively, which effectively improves the overall structural strength and supporting function of the base film 600, the light-transmitting modified layer 500 and the black modified layer 400, and is conducive to the subsequent laying of the substrate 200. In addition, the flow of the organosilicon-modified epoxy resin in the light-transmitting modified layer 500 and the black modified layer 400 is reduced, and wrinkles and other problems such as the light-transmitting modified layer 500 or the black modified layer 400 are avoided in the subsequent molding process of the substrate 200.

[0078] In some embodiments, after the step of forming the black layer into the black modified layer 400 , the preparation method further includes: forming a microstructure 410 on the surface of the black modified layer 400 , wherein the microstructure 410 is arranged corresponding to the LED chip 300 .

[0079] It should be noted that in the molding process of the substrate 200, due to the uneven heating of the light-transmitting glue and the black glue in the previous softening and / or pre-crosslinking process, especially when heating the large-sized base film 600, some areas in the light-transmitting modified layer 500 and the black modified layer 400 are excessively pre-crosslinked, and the hardness of some areas is relatively high. In the subsequent molding process of the substrate 200, the molding force needs to be increased to allow the LED chip 300 to pass through the black modified layer 400, which is easy to damage the LED chip 300.

[0080] By forming a microstructure 410 on the surface of the black modified layer 400, and the microstructure 410 is arranged corresponding to the LED chip 300; when the substrate 200 is molded, the pressure applied by the LED chip 300 to penetrate the black modified layer 400 can be significantly reduced, thereby protecting the light-emitting surface of the LED chip 300.

[0081] In some embodiments, in the step of forming the microstructure 410 on the surface of the black modified layer 400 , the preparation method further includes: cutting the surface of the black modified layer 400 , and forming a plurality of separation lines 420 on the surface of the black modified layer 400 .

[0082] It should be noted that, during the molding process of the substrate 200, the pressure allows the LED chip 300 to pass through the black modified layer 400, but since the black modified layer 400 is in a semi-cured state, the semi-cured black glue inside it still has a certain viscosity. As a result, after the LED chip 300 passes through the black modified layer 400, part of the semi-cured black glue is likely to remain on its surface, which seriously affects the display effect of the display panel 100.

[0083] A plurality of separation lines 420 are formed on the surface of the black modified layer 400 by adopting a cutting process, that is, the microstructure 410 on the surface of the black modified layer 400 is composed of a plurality of fine grooves, and at the same time, the grooves are arranged corresponding to the LED chip 300; when the substrate 200 is molded, the LED chip 300 can pass through the black modified layer 400 through these fine grooves, that is, the contact area between the surface of the LED chip 300 and the semi-cured black glue is reduced, which greatly reduces the part of the semi-cured black glue remaining on the surface of the LED chip 300, and improves the display effect of the display panel 100.

[0084] Furthermore, in some other embodiments, the microstructure 410 may be formed on the surface of the black modified layer 400 by using a process such as etching, which is not limited here.

[0085] In some embodiments, the dividing line 420 includes a plurality of first dividing lines 421 disposed in parallel at intervals, and / or a plurality of second dividing lines 422 disposed in parallel at intervals; the angle between the extension direction of the first dividing line 421 and the extension direction of the second dividing line 422 is B, where B satisfies: 60°≤B≤120°.

[0086] It can be understood that the microstructure 410 in the embodiment of the present application is composed of a staggered first dividing line 421 and a second dividing line 422, that is, the intersection of the first dividing line and the second dividing line can correspond to an LED chip 300, and the microstructure 410 is composed of a plurality of rectangular blocks arranged in an array. When the substrate 200 is molded, the LED chip 300 squeezes the black modified layer 400, and the semi-cured black glue moves around the LED chip 300, which can significantly reduce the resistance encountered by the LED chip 300 passing through the black modified layer 400, and further reduce the semi-cured black glue remaining on the surface of the LED chip 300, thereby improving the display effect of the display panel 100.

[0087] In addition, by setting the angle B between the first dividing line 421 and the second dividing line 422 , the semi-cured black glue can move in all directions around the LED chip 300 when the substrate 200 is molded, thereby reducing wrinkles on the surface of the black modified layer 400 .

[0088] Furthermore, in some other embodiments, B may also satisfy: 45°≤B<60°, or 60°<B≤75°, etc., which are not excessively limited here.

[0089] In some embodiments, the microstructure 410 may also be composed of a plurality of triangular blocks, hexagonal blocks, or irregularly shaped blocks, which are not limited here.

[0090] In an embodiment of the present application, after completing the above steps, a substrate 200 with a plurality of LED chips 300 mounted in a surface array is disposed on the black modified layer 400, and the substrate 200 is molded so that the LED chip 300 passes through the black modified layer 400, and the LED chip 300 is at least partially located in the light-transmitting modified layer 500.

[0091] It can be understood that, since the optical transmittance of the light-transmitting modified layer 500 is close to 100%, the portion of the LED chip 300 located in the light-transmitting modified layer 500 is the light-emitting surface.

[0092] By molding the substrate 200 , the LED chip 300 can pass through the black modified layer 400 relatively quickly, and the LED chip 300 is at least partially located in the light-transmitting modified layer 500 .

[0093] In some embodiments, the microstructure 410 is disposed on the light-transmitting modification layer 500 .

[0094] It is understandable that, since the LED chip 300 is at least partially located in the light-transmitting modified layer 500 , when the substrate 200 is molded, part of the LED chip 300 will still be embedded in the light-transmitting modified layer 500 , which can easily cause wrinkles on the surface of the light-transmitting modified layer 500 .

[0095] By setting the microstructure 410 on the light-transmitting modification layer 500, part of the light-transmitting glue in a semi-cured state on the light-transmitting modification layer 500 can be removed, and installation space can be reserved for the LED chip 300 embedded in the light-transmitting modification layer 500, thereby improving the surface uniformity of the light-transmitting modification layer 500 and further improving the display effect of the display panel 100.

[0096] Optionally, an etching process may be used to etch a plurality of arrays of pits (not shown in the figure) in the light-transmitting modified layer 500 , and the plurality of pits are arranged one by one corresponding to the LED chips 300 .

[0097] Alternatively, a cutting process may be used to cut a third dividing line and / or a fourth dividing line on the surface of the light-transmitting modified layer 500 . The principle and effect are the same or similar to the first dividing line 421 and the second dividing line 422 described above, and are not elaborated on herein.

[0098] Alternatively, when the first separation line 421 and / or the second separation line 422 are cut to form, the first separation line 421 and / or the second separation line 422 may pass through the black modified layer 400, and a third separation line and / or a fourth separation line may be formed on the light-transmitting modified layer 500. That is, at least two separation lines 420 are formed by cutting once. No further limitation is given here.

[0099] In the embodiment of the present application, after completing the above steps, the light-transmitting modified layer 500 and the black modified layer 400 are cured.

[0100] It should be noted that the black modified layer 400 and the light-transmitting modified layer 500 are in a pre-cured state and still have a certain fluidity; and due to the microstructure 410, the surface of the black modified layer 400 and the light-transmitting modified layer 500 is easily affected by the movement of the display panel 100 and becomes uneven, resulting in poor display effect.

[0101] By curing the light-transmitting modified layer 500 and the black modified layer 400, the semi-cured black glue and the semi-cured light-transmitting glue can be completely cured, thereby improving the support effect and structural stability of the display panel 100. Moreover, the black glue and the light-transmitting glue can be completely cured to fill the gap between the microstructure 410 and the LED chip 300; in particular, when the dividing line 420 is set, the dividing line on the light-transmitting modified layer 500 and / or the black modified layer 400 will disappear after curing; so that the light-transmitting modified layer 500 and / or the black modified layer 400 after curing are independently formed into a complete whole, thereby improving the surface uniformity of the light-transmitting modified layer 500 and the black modified layer 400, thereby improving the display effect of the display panel 100.

[0102] Specifically, the curing temperature may be 100°C to 160°C.

[0103] In summary, the present application provides a semi-cured light-transmitting modified layer 500 and a black modified layer 400 formed by pre-crosslinking treatment, and the user can directly buckle the substrate 200 with the LED chip 300 mounted on the black modified layer 400; then mold the substrate 200 so that the LED chip 300 penetrates the semi-cured black modified layer 400 and is partially located in the light-transmitting modified layer 500. In this way, the LED chip 300 located in the light-transmitting modified layer 500 can emit light for display; it also avoids the need to use an etching process to process the black glue layer in the traditional process, and improves the surface flatness of the black modified layer 400; and compared with the prior art, it also reduces one molding process, and improves the preparation efficiency of the display panel 100.

[0104] The present application also provides a display panel 100, which is prepared by the preparation method described by He Shuwen. Therefore, the display panel 100 has all the same beneficial effects, and the present invention will not be repeated here.

[0105] Specifically, the LED chip 300 includes a red LED chip, a green LED chip, a blue LED chip and other light-emitting chips of various colors. A control circuit is also provided on the substrate 200 to electrically connect the LED chip 300. The control circuit (not shown in the figure) is used to control and adjust the light-emitting display of the LED chip 300. The substrate 200 may be a PCB board.

[0106] In particular, the LED chip 300 provided in the embodiment of the present application may be a Mini-LED chip, or a Micro-LED chip, etc.

[0107] The embodiment of the present application does not impose any specific restrictions on the applicability of the display panel 100, which can be any product or component with a display function, such as a television, a laptop computer, a tablet computer, a wearable display device (such as a smart bracelet, a smart watch, etc.), a mobile phone, a virtual reality device, an augmented reality device, a car display, an advertising light box, etc.

[0108] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0109] The display panel 100 and the preparation method thereof provided in the embodiments of the present application are introduced in detail above. The principles and implementation methods of the present application are explained in this article using specific examples. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for preparing a display panel, characterized in that: include: providing a base film; A light-transmitting layer and a black layer are sequentially arranged on one side of the base film; Pre-crosslinking the light-transmitting layer and the black layer, so that the light-transmitting layer forms a light-transmitting modified layer, and the black layer forms a black modified layer; Disposing a substrate with a plurality of LED chips mounted in a surface array on the black modified layer, and molding the substrate so that the LED chips penetrate the black modified layer and at least part of the LED chips are located in the light-transmitting modified layer; The light-transmitting modified layer and the black modified layer are cured.

2. The preparation method according to claim 1, characterized in that After the step of forming the black layer into a black modified layer, the method comprises: A microstructure is formed on the surface of the black modified layer, and the microstructure is arranged corresponding to the LED chip.

3. The preparation method according to claim 2, characterized in that: In the step of forming a microstructure on the surface of the black modified layer, the method comprises: The surface of the black modified layer is cut to form a plurality of separation lines on the surface of the black modified layer.

4. The preparation method according to claim 3, characterized in that: The dividing lines include a plurality of first dividing lines arranged in parallel and at intervals, and / or a plurality of second dividing lines arranged in parallel and at intervals; An included angle between an extending direction of the first dividing line and an extending direction of the second dividing line is B, wherein B satisfies: 60°≤B≤120°.

5. The preparation method according to claim 1, characterized in that: In the step of sequentially providing a light-transmitting layer and a black layer on one side of the base film, the method comprises: Provide translucent glue and black glue; Softening the light-transmitting glue and the black glue; The light-transmitting layer and the black layer are sequentially coated on one side of the base film.

6. The preparation method according to claim 1, characterized in that: The optical transmittance of the base film is E, wherein E satisfies: 30%≤E≤70%.

7. The preparation method according to claim 1, characterized in that: Before sequentially providing a light-transmitting layer and a black layer on one side of the base film, the method comprises: A reduction layer is disposed on the base film, wherein the reduction layer is disposed on a side of the base film close to the light-transmitting layer and / or a side of the base film away from the light-transmitting layer.

8. The preparation method according to claim 7, characterized in that: After providing a reduction layer on the base film, the method comprises: When the reflection reduction layer is disposed on the side of the base film close to the light-transmitting layer, a protective layer is disposed on the side of the base film away from the light-transmitting layer; or When the reflection reduction layer is disposed on a side of the base film away from the light-transmitting layer, the protective layer is disposed on a side of the reflection reduction layer away from the base film.

9. The preparation method according to claim 8, characterized in that: The material of the protective layer includes at least one of Al2O3 and SiO2; and / or The material of the reduction layer includes at least one of SiO2 and SiN; and / or The material of the base film is one of PET, PC or PI; and / or The materials of the light-transmitting layer and the black layer are both silicone-modified epoxy resins. The black layer contains at least one filler selected from nano carbon black and graphite, and the content of the nano carbon black and / or the graphite is D, wherein D satisfies: 2%≤D≤5%.

10. A display panel, characterized in that: The display panel is prepared by the preparation method according to any one of claims 1 to 9.