Electronic device comprising a semiconductor module

Abstract

An electronic device (100) applied to an electric motor includes a wiring substrate (101), an electric connection wiring (150) disposed at a substantially center of the wiring substrate and connected to a power source, a plurality of motor connection wirings (114-116) disposed at a periphery side of the wiring substrate compared to the electric connection wiring and connected to the electric motor, and a plurality of semiconductor modules (120) each including a plurality of semiconductor elements (123b, 124b) and a resin mold (125) integrally sealing the plurality of semiconductor elements. The plurality of semiconductor modules are disposed on the electric connection wiring or at a position at the periphery side of the wiring substrate compared to the electric connection wiring and at a center side of the wiring substrate compared to the motor connection wirings, and electrodes of at least a part of the plurality of semiconductor modules are mounted on the electric connection wiring.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Japanese Application No. 2019-194218 filed on October 25, 2019, and Japanese Application No. 2020-174268 filed on October 15, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to electronic devices that include semiconductor modules. Background Technology

[0004] Patent Document 1 describes an electric power steering device that includes a wiring board with power conversion circuits for two systems used to drive and control an electric motor. The power conversion circuits for the two systems are formed approximately symmetrically with respect to the center line of the wiring board, and are arranged adjacently with a positive power path on the central side and a negative power path on the peripheral side, and further have terminals arranged around them.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-55488

[0006] In the wiring substrate of Patent Document 1, three independently packaged semiconductor modules constitute a high-potential MOSFET, a low-potential MOSFET, and a phase relay MOSFET, which serve as switching elements for a power conversion circuit. Therefore, wiring is required around the semiconductor modules to connect them, which increases impedance and inductance. Furthermore, sufficient space must be provided on the wiring substrate for the wiring. Summary of the Invention

[0007] In view of the above, the purpose of this disclosure is to provide a technique for simplifying the wiring of semiconductor modules connected to each other on a wiring board in an electronic device applied to an electric motor.

[0008] This disclosure provides an electronic device for use in an electric motor. The electronic device includes: a wiring substrate; electrical connection wiring disposed approximately at the center of the wiring substrate; a plurality of motor connection wirings disposed on the peripheral side of the wiring substrate compared to the electrical connection wirings and connected to the electric motor; and a plurality of semiconductor modules having a plurality of semiconductor elements and a resin mold integrally sealing the plurality of semiconductor elements. The plurality of semiconductor modules are disposed on the electrical connection wirings, or disposed at a position on the peripheral side compared to the electrical connection wirings and on the central side compared to the motor connection wirings, and electrodes of at least a portion of the plurality of semiconductor modules are mounted on the electrical connection wirings.

[0009] According to the electronic device disclosed herein, multiple semiconductor modules, in which multiple semiconductor elements are integrally sealed within a resin mold, are disposed on electrical connection wiring, or disposed at a position peripheral to the electrical connection wiring and central to the motor connection wiring. By integrally sealing multiple semiconductor elements within a resin mold, the wiring connecting the semiconductor elements disposed on the wiring substrate can be simplified. Furthermore, by mounting electrodes of at least a portion of the multiple semiconductor modules on the electrical connection wiring, at least a portion of the semiconductor modules and the electrical connection wiring can be disposed in an overlapping manner, reducing the area of ​​the wiring surrounding the semiconductor modules. Therefore, the area of ​​the wiring from the motor connection wiring to the electrical connection wiring, and the wiring surrounding the semiconductor modules, can be reduced. As a result, in the wiring substrate, the wiring connecting multiple motor connection wiring and multiple semiconductor elements can be simplified, reducing the space required for wiring and lowering the impedance and inductance of the wiring. Attached Figure Description

[0010] The above-mentioned objects, as well as other objects, features, and advantages of this disclosure, become clearer from the following detailed description with reference to the accompanying drawings.

[0011] Figure 1 This is a schematic diagram illustrating an example of an electric power steering system to which the electronic device of the first embodiment can be applied.

[0012] Figure 2 This is a top view of the electronic device according to the first embodiment.

[0013] Figure 3 yes Figure 2 A top view of the semiconductor module included in the electronic device shown.

[0014] Figure 4 yes Figure 3 Sectional view along line IV-IV,

[0015] Figure 5 It means Figure 3 The diagram shows a cross-sectional view of the semiconductor components in the semiconductor module.

[0016] Figure 6 It means that it can be applied. Figure 2 The diagram shows an example of a motor drive circuit for an electronic device.

[0017] Figure 7 This is a top view of the electronic device involved in the variation example.

[0018] Figure 8 These are the top view and sectional view of the electronic device involved in the variation example.

[0019] Figure 9 yes Figure 8 A top view of the semiconductor module included in the electronic device shown.

[0020] Figure 10 yes Figure 9 X-ray cross-sectional view,

[0021] Figure 11 This is a top view of the electronic device according to the second embodiment.

[0022] Figure 12 It means that it can be applied. Figure 11 The diagram shows an example of a motor drive circuit for an electronic device.

[0023] Figure 13 This is a top view of the electronic device according to the third embodiment.

[0024] Figure 14 It means that it can be applied. Figure 13 The diagram shows an example of a motor drive circuit for an electronic device.

[0025] Figure 15 This is a top view of the electronic device according to the fourth embodiment.

[0026] Figure 16 This is a top view of a modified electronic device.

[0027] Figure 17 It means that it can be applied. Figure 15 as well as Figure 16 The diagram shows an example of a motor drive circuit for an electronic device.

[0028] Figure 18 This is a top view of the electronic device according to the fifth embodiment.

[0029] Figure 19 It means that it can be applied. Figure 18 The diagram shows an example of a motor drive circuit for an electronic device.

[0030] Figure 20 This is a top view of the electronic device according to the sixth embodiment.

[0031] Figure 21 It means that it can be applied. Figure 20 The diagram shows an example of a motor drive circuit for an electronic device.

[0032] Figure 22 This is a top view of a modified electronic device.

[0033] Figure 23 It means that it can be applied. Figure 22 The diagram shows an example of a motor drive circuit for an electronic device.

[0034] Figure 24 This is a top view showing the state in the electronic device of the seventh embodiment where electrical connection wiring has been removed.

[0035] Figure 25 It means in Figure 24 The diagram shows a top view of the electronic device with its electrical wiring in place.

[0036] Figure 26 yes Figure 24 A top view of the semiconductor module included in the electronic device shown.

[0037] Figure 27 It means in Figure 26 The diagram shown is a top view of the semiconductor module excluding the resin mold.

[0038] Figure 28 yes Figure 27 Sectional view along line XXVIII-XXVIII,

[0039] Figure 29 yes Figure 27 XXIX-XXIX line cross-sectional view,

[0040] Figure 30 This is a top view of a modified electronic device.

[0041] Figure 31 It means Figures 26-29 The diagram shows an example of a semiconductor module installation.

[0042] Figure 32 It means Figures 26-29 The diagram shows an example of a semiconductor module installation.

[0043] Figure 33 This is a top view showing a modified example of a semiconductor module.

[0044] Figure 34 It means in Figure 33 The diagram shown is a three-dimensional representation of the semiconductor module without the resin mold.

[0045] Figure 35 It means in Figure 33 The diagram shown is a top view of the semiconductor module excluding the resin mold.

[0046] Figure 36 yes Figure 35 Sectional view along line XXXVI-XXXVI. Detailed Implementation

[0047] (First Implementation)

[0048] The electronic device 100 of the first embodiment can be applied to Figure 1 The drive circuit of the electric power steering (EPS) system 80 of the vehicle shown is described. The EPS 80 includes a steering wheel 90 forming a control lever, a steering shaft 91, a pinion 92, a rack and pinion 93, and an EPS device 81. The steering shaft 91 is connected to the steering wheel 90. A pinion 92 is provided at the front end of the steering shaft 91. The pinion 92 meshes with the rack and pinion 93. Wheels 95 are rotatably connected to both ends of the rack and pinion 93 via tie rods or the like. When the driver rotates the steering wheel 90, the steering shaft 91 rotates. The rotational motion of the steering shaft 91 is converted into linear motion of the rack and pinion 93 by the pinion 92, and the wheels 95 are steered at a steering angle corresponding to the displacement of the rack and pinion 93.

[0049] The EPS device 81 includes a torque sensor 94, a reducer 96, and an electromechanical electric motor 40. The torque sensor 94 is located on the steering shaft 91 and detects the output torque of the steering shaft 91, i.e., the steering torque Trq. The electric motor 40 includes a rotary motor section 41 and an energizing circuit section 42. The rotary motor section 41 generates an auxiliary torque corresponding to the detected steering torque Trq and the steering direction of the steering wheel 90. The energizing circuit section 42 performs drive control of the rotary motor section 41. The reducer 96 reduces the rotation of the rotor shaft of the rotary motor section 41 and transmits the auxiliary torque to the steering shaft 91.

[0050] like Figure 1 , 2 As shown, an electronic device 100 in the shape of a roughly circular plate is disposed inside the housing of the power-conducting circuit section 42. Figure 2 This is a view of the electronic device 100 from the rotary motor section 41 side. The electronic device 100 includes a generally circular wiring board 101 and a fixing part 102 provided around the periphery of the wiring board 101. The fixing part 102 has a hole that allows the electronic device 100 to be fixed to the rotary motor section 41 side by screwing in a bolt.

[0051] The electronic device 100 also includes a first motor output terminal 111, a second motor output terminal 112, a third motor output terminal 113, a first motor connection wiring 114, a second motor connection wiring 115, a third motor connection wiring 116, a first semiconductor module 120, a second semiconductor module 130, a third semiconductor module 140, an electrical connection wiring 150, and a power supply terminal 160. These components are disposed on the surface of the wiring board 101 on the side of the rotary motor section 41.

[0052] like Figure 2 As shown, the electrical connection wiring 150 is positioned in the center of the wiring substrate 101 in the x-direction, near the center (close to the center). Figure 2Located on the right side of the image, and extending in the y direction. The electrical connection wiring 150 is connected to the main battery that supplies power to the EPS80 via the power supply terminal 160.

[0053] On the peripheral side (positive x-axis side) of the wiring substrate 101, a first motor output terminal 111, a second motor output terminal 112, and a third motor output terminal 113 are sequentially arranged from the positive y-axis side toward the negative y-axis side. A first motor connection wiring 114 extends substantially linearly from the first motor output terminal 111 toward the center side (negative x-axis side) of the wiring substrate 101 where the electrical connection wiring 150 is arranged. A second motor connection wiring 115 extends substantially linearly from the second motor output terminal 112 toward the center side (negative x-axis side) of the wiring substrate 101 where the electrical connection wiring 150 is arranged. A third motor connection wiring 116 extends substantially linearly from the third motor output terminal 113 toward the center side (negative x-axis side) of the wiring substrate 101 where the electrical connection wiring 150 is arranged. The wiring direction of the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116 is towards the direction of the electrical connection wiring 150 (x direction), and the arrangement direction of the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116 is the direction orthogonal to the wiring direction on the wiring substrate 101 (y direction).

[0054] The first semiconductor module 120 is disposed between the first motor connection wiring 114 and the electrical connection wiring 150. The second semiconductor module 130 is disposed between the second motor connection wiring 115 and the electrical connection wiring 150. The third semiconductor module 140 is disposed between the third motor connection wiring 116 and the electrical connection wiring 150.

[0055] The first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are semiconductor modules with the same structure, such as... Figure 3 , 4As shown, the shape, when viewed from above, has four external terminals 121 protruding in the positive x-axis direction and four external terminals 122 protruding in the negative x-axis direction from a generally rectangular resin mold 125 having two opposite sides in the x-direction and two opposite sides in the y-direction. The first semiconductor module 120 is configured to be generally parallel to the wiring direction (x-direction) of the first motor connection wiring 114 when viewed from above. More specifically, it is configured such that, when viewed from above, two opposite sides of the four sides of the generally rectangular upper surface of the first semiconductor module 120 are generally parallel to the wiring direction of the first motor connection wiring 114. Similarly, the second semiconductor module 130 and the third semiconductor module 140 are also configured to be generally parallel to the wiring direction (x-direction) of the second motor connection wiring 115 and the third motor connection wiring 116, respectively, when viewed from above. More specifically, the configuration is such that, when viewed from above, two opposite sides of the four sides of the generally rectangular upper surface of the second semiconductor module 130 and the third semiconductor module 140 are approximately parallel to the wiring directions of the second motor connection wiring 115 and the third motor connection wiring 116, respectively.

[0056] The first semiconductor module 120 includes a first semiconductor element portion 123, a second semiconductor element portion 124, a resin mold 125, and external terminals 121 and 122. The first semiconductor element portion 123 includes a semiconductor element 123b, a first electrode 123c, and a second electrode 123a. The second semiconductor element portion 124 includes a semiconductor element 124b, a first electrode 124c, and a second electrode 124a. The resin mold 125 integrally seals the first semiconductor element portion 123 and the second semiconductor element portion 124.

[0057] Semiconductor elements 123b and 124b have the same element structure and are... Figure 5 A vertically insulated gate semiconductor device with the structure shown. More specifically, it is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

[0058] Semiconductor elements 123b and 124b include a semiconductor substrate 60, a source electrode 71, and a drain electrode 72. The source electrode 71 is formed to contact the upper surface 60u of the semiconductor substrate 60. The drain electrode 72 is formed to contact the lower surface 60b of the semiconductor substrate 60. The upper surface 60u corresponds to a first surface, and the lower surface 60b corresponds to a second surface. On the semiconductor substrate 60, n electrodes are sequentially stacked starting from the lower surface 60b side. + Region 61, n － Area 62, and p + Area 63. In p +A portion of the upper surface side of region 63 is formed with n + Region 64. A through-hole is formed from the upper surface 60u of the semiconductor substrate 60. + Area 64 and p + Region 63, and reach n － A channel 73 is formed on the upper surface side of region 62. A gate insulating film 74 is formed on the inner wall surface of the channel 73, and a gate electrode 75 is filled in the channel 73 in a state of being insulated from the semiconductor substrate 60 by the gate insulating film 74. The upper surface of the gate electrode 75 is covered by an insulating film 76, which insulates the gate electrode 75 from the source electrode 71. Furthermore, the material of the semiconductor substrate 60 is not particularly limited, but examples include silicon (Si), silicon carbide (SiC), gallium nitride (GaN), etc.

[0059] If a positive voltage is applied to the gate electrodes 75 of the first semiconductor element 133 and the second semiconductor element 143, then along the gate insulating film 74 at p + Region 63 forms an n-type channel, and in the semiconductor substrate 60, n-type charge carriers move from the source electrode 71 side to the drain electrode 72 side. Thus, current flows from the drain electrode 72 side to the source electrode 71 side. That is, in semiconductor elements 123b and 124b, switching control of the switching elements of semiconductor elements 123b and 124b can be performed by controlling the gate voltage applied to the gate electrode 75. The source electrode 71 corresponds to the first electrode, and the source terminal electrically connected to the source electrode 71 in the external terminals corresponds to the first terminal. Similarly, the drain electrode 72 corresponds to the second electrode, and the drain terminal electrically connected to the drain electrode 72 in the external terminals corresponds to the second terminal.

[0060] Semiconductor elements 123b and 124b are configured such that the source electrode 71 faces the side of the rotary motor section 41 (the positive direction of the z-axis), and the drain electrode faces the opposite side (the negative direction of the z-axis), with the long side direction being the x-direction. Semiconductor elements 123b and 124b are integrally sealed in a side-by-side configuration along the y-axis with the same orientation. The gate pads of semiconductor elements 123b and 124b are located at the same positions in each semiconductor element. Among the external terminals 121 and 122, the drain terminal of semiconductor element 123b is external terminal 121a and 121b connected to the second electrode 123a, the source terminal is external terminal 122b connected to the first electrode 123c, and the gate terminal is external terminal 122a. In addition, the drain terminal of the semiconductor element 124b is an external terminal 122c and 122d connected to the second electrode 124a, the source terminal is an external terminal 121c connected to the first electrode 124c, and the gate terminal is an external terminal 121d.

[0061] Semiconductor elements 123b and 124b are arranged in a direction parallel to the wiring directions (x-direction) of the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116, and perpendicular to the wiring directions (y-direction) of the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116. The drain terminals (external terminals 121a and 121b) of semiconductor element 123b and the source terminals (external terminals 121c) of semiconductor element 124b are soldered to the first motor connection wiring 114. The drain terminals (external terminals 122c and 122d) of semiconductor element 124b are soldered to the electrical connection wiring 150.

[0062] Similarly, the external terminals of the second semiconductor module 130 protruding in the positive x-axis direction are soldered to the second motor connection wiring 115. The external terminals of the second semiconductor module 130 protruding in the negative x-axis direction are soldered to the electrical connection wiring 150. The external terminals of the third semiconductor module 140 protruding in the positive x-axis direction are soldered to the third motor connection wiring 116. The external terminals of the third semiconductor module 140 protruding in the negative x-axis direction are soldered to the electrical connection wiring 150.

[0063] Electronic device 100 is applied to Figure 6 The motor drive circuit shown is as follows. Figure 6 As shown, the rotary motor section 41 can be a rotary motor of either permanent magnet excitation type or winding excitation type. The stator of the rotary motor section 41 includes a winding group M. The winding group M includes a U-phase winding U, a V-phase winding V, and a W-phase winding W connected in a star configuration. The first ends of each of the U, V, and W-phase windings U, V, and W are connected at the neutral point. The electrical angles θe of the U, V, and W-phase windings U, V, and W are offset from each other by 120°.

[0064] The power supply circuit section 42 includes an inverter INV (which functions as a power converter), a power relay SR, and a reverse connection protection relay SC. The inverter INV includes switch groups SU, SV, and SW, each switch group comprising an upper arm switch and a lower arm switch. The second terminal of the U-phase winding U is connected to the connection point between the upper and lower arm switches in switch group SU. The second terminal of the V-phase winding V is connected to the connection point between the upper and lower arm switches in switch group SV. The second terminal of the W-phase winding W is connected to the connection point between the upper and lower arm switches in switch group SW.

[0065] The high-potential terminal H of the upper arm switches of switch groups SU, SV, and SW is connected to the positive terminal of the battery V, which serves as the DC power supply, via power relay SR, reverse connection protection relay SC, and inductor L. A bypass capacitor C is connected in parallel with battery V. The negative terminal of battery V is connected to ground. The low-potential terminal of the lower arm switches of switch groups SU, SV, and SW is connected to ground via resistors RU, RV, and RW.

[0066] As the switching elements constituting switch groups SU, SV, and SW, MOSFETs as illustrated by semiconductor elements 123b and 124b can be used. In each switch group SU, SV, and SW, the source electrode of the MOSFET used as the upper arm switch and the drain electrode of the MOSFET used as the lower arm switch are connected and connected in series.

[0067] A first semiconductor module 120 can be used as a semiconductor module that integrates the upper and lower arm switches of switch group SU. A second semiconductor module 130 can be used as a semiconductor module that integrates the upper and lower arm switches of switch group SV. A third semiconductor module 140 can be used as a semiconductor module that integrates the upper and lower arm switches of switch group SW. The first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 can be applied to inverter INV.

[0068] Alternatively, MOSFETs as illustrated in semiconductor elements 123b and 124b can be used as switching elements constituting the power relay SR and the reverse connection protection relay SC. The power relay SR and the reverse connection protection relay SC are connected in series by connecting the source electrodes of the MOSFETs to each other.

[0069] Furthermore, when using MOSFETs such as semiconductor elements 123b and 124b as switching elements, their body diodes can be used as return diodes. Therefore, although in Figure 6 The reverse parallel connection of the return diodes is not described for each switch, but it is possible to connect return diodes to each switch.

[0070] The power-on circuit section 42 detects the current flowing in resistors RU, RV, and RW, and outputs it as the phase currents Iur, Ivr, and Iwr of U, V, and W, respectively.

[0071] The power supply circuit unit 42 includes an ECU, primarily composed of a microcomputer. The ECU operates the switches of the inverter INV to control the torque of the rotating motor unit 41 to a torque command value Tr*. For example, the torque command value Tr* is set based on the steering torque Trq detected by the torque sensor 94. The power supply circuit unit 42, through the ECU, calculates the electrical angle θe of the rotating motor unit 41 based on the output signal of the angle sensor. Furthermore, an angle sensor can be, for example, an angle sensor comprising a magnetic generating unit (i.e., a magnet) provided on the rotor side of the rotating motor unit 41, and a magnetic detection element positioned close to the magnet. For example, the functions provided by the ECU can be provided by software recorded in a physical memory device and a computer or hardware executing that software, or a combination thereof.

[0072] As described above, the electronic device 100 can be applied to the power-on circuit section 42, which corresponds to the drive circuit of the EPS80. Furthermore, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 can be applied to the switches SU, SV, and SW of the inverter circuit shown as the inverter INV, respectively.

[0073] As described above, in the electronic device 100 of the first embodiment, the electrical connection wiring 150 is disposed approximately at the center of the wiring substrate 101 in a first direction (x-direction) and extends in a second direction (y-direction) orthogonal to the first direction. The first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116 are disposed on the peripheral side of the wiring substrate 101, which is on the positive x-axis side relative to the electrical connection wiring 150. The first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116 are arranged sequentially from the positive y-axis side toward the negative y-axis side, and extend approximately parallel to the negative x-axis direction of the electrical connection wiring 150.

[0074] Furthermore, a first semiconductor module 120, a second semiconductor module 130, and a third semiconductor module 140 are respectively disposed between the electrical connection wiring 150 and the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116. The first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are semiconductor modules integrally sealed within a resin mold, forming two semiconductor elements (MOSFETs) of switch groups SU, SV, and SW disposed between the electrical connection wiring 150 and the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116. In the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140, the two semiconductor elements of switch groups SU, SV, and SW are interconnected within the resin mold, so it is not necessary to provide wiring for connecting the two semiconductor elements on the wiring substrate 101 on the side (xy plane direction) of the resin mold.

[0075] Furthermore, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are respectively disposed on the peripheral side compared to the electrical connection wiring 150, and disposed on the central side compared to the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116. The drain terminals of the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are joined to the electrical connection wiring 150. Therefore, it is possible to configure at least a portion of the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 to overlap with the electrical connection wiring 150, thereby reducing the area of ​​the wiring around the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140. As a result, in the wiring substrate 101, the wiring consisting of the first semiconductor module 120, the second semiconductor module 130, the third semiconductor module 140, the first motor connection wiring 114, the second motor connection wiring 115, the third motor connection wiring 116, etc., can be simplified, the space used for wiring can be reduced, and the impedance and inductance of the wiring can be reduced.

[0076] Furthermore, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are respectively configured between the electrical connection wiring 150 and the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116, so as to be approximately parallel to the connected motor connection wiring. Therefore, the length of the wiring from each motor output terminal 111 to 113 to the electrical connection wiring 150 can be minimized. Additionally, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are arranged side-by-side such that the direction of extension of the external terminals 121 and 122 is approximately parallel to the wiring direction of the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116, i.e., the x-direction. By configuring them in this way, it is easy to configure the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 to be approximately parallel to the first motor connection wiring 114, the second motor connection wiring 115, and the third motor connection wiring 116, respectively.

[0077] (Modified Example)

[0078] Although in the first embodiment, the first semiconductor module 120, the second semiconductor module 130, and the third semiconductor module 140 are arranged with two semiconductor elements within the resin mold facing approximately parallel in the y-direction, this is not a limitation.

[0079] like Figure 7 As shown in the first semiconductor module 220, second semiconductor module 230, and third semiconductor module 240, two semiconductor elements within the resin mold can also be arranged in a substantially parallel orientation in the x-direction. The first semiconductor module 220, second semiconductor module 230, and third semiconductor module 240 are the same semiconductor modules as the first semiconductor module 120, etc., arranged relative to... Figure 2 The orientation of the center is rotated 90° counterclockwise.

[0080] Furthermore, the electrical connection wiring 250 extends approximately in a straight line along the arrangement direction of the first semiconductor module 220, the second semiconductor module 230, and the third semiconductor module 240, i.e., the y-direction. The electrical connection wiring 250 connects to the semiconductor element disposed on one side. Figure 3 , 6 The drain pad contacts are on the lower surface of the semiconductor element 124b) on the upper arm side shown. The first semiconductor module 220, the second semiconductor module 230, and the third semiconductor module 240 are arranged on the electrical connection wiring 250, thus reducing the mounting area on the wiring substrate 201. The other components of the electronic device 200 are the same as those of the electronic device 100, so the description is omitted by replacing the reference number in the 100 segment with the 200 segment.

[0081] In addition, such as Figure 8 As shown in the first semiconductor module 320, second semiconductor module 330, and third semiconductor module 340, two semiconductor elements within the resin mold can also be mounted in the thickness direction (z-direction) of the wiring substrate 301. Furthermore, the first semiconductor module 320, second semiconductor module 330, and third semiconductor module 340 are semiconductor modules with the same structure. The configuration of the first semiconductor module 320 is applied to the second semiconductor module 330 or the third semiconductor module 340 by replacing the 320 segment of the reference number with the 330 segment or the 340 segment.

[0082] like Figure 8 As shown in (b), the wiring substrate 301 is a stacked substrate on which the resist layer 361, substrate layer 362, wiring layer 363, substrate layer 364, wiring layer 365, substrate layer 366, and resist layer 367 are sequentially stacked from the surface on which the third semiconductor module 340 is mounted. Substrate layers 362 and 364 are insulating layers made of an insulator called a core material, and wiring layers 363 and 365 are made of electrode materials such as copper. The third motor connection wiring 316 and the electrical connection wiring 350 are disposed on the substrate layer 362, and the third motor output terminal 313 is connected to the third motor connection wiring 316 on the substrate layer 362. The resist layer 361 is formed on the third motor connection wiring 316 in a region from near the mounting surface of the third semiconductor module 340 to near the front of the third motor output terminal 313, and the upper surface of the third motor output terminal 313 is not covered by the resist layer 361. The third motor output terminal 313 extends from the substrate layer 362 to the resist layer 367 in the thickness direction (z-axis direction) of the wiring substrate 301. The wiring layers 363 and 365 are electrically connected to the third motor output terminal 313.

[0083] like Figure 9 , 10As shown, the first semiconductor module 320 includes a first semiconductor element portion 323 disposed on the positive z-axis side, a second semiconductor element portion 324 disposed on the negative z-axis side, a resin mold 325, and external terminals 321 and 322. The first semiconductor element portion 323 includes a semiconductor element 323b and a first electrode 323c. The second semiconductor element portion 324 includes a semiconductor element 324b, a first electrode 324c, and a second electrode 324a. Semiconductor elements 323b and 324b are MOSFETs having the same element structure as semiconductor elements 123b and 124b, and are arranged with the source electrode 71 side facing the positive z-axis direction. The first electrode 324c is bonded to the surface of the semiconductor element 324b on the source electrode 71 side and to the surface of the semiconductor element 323b on the drain electrode 72 side. The resin mold 325 integrally seals the first semiconductor element portion 323 and the second semiconductor element portion 324. External terminal 321 is electrically connected to semiconductor element 323b on the first semiconductor element section 323 side. External terminal 322 is electrically connected to semiconductor element 324b on the second semiconductor element section 324 side.

[0084] according to Figure 8 The electronic device 300 shown has a smaller planar (xy-direction) area for the first semiconductor module 320, the second semiconductor module 330, and the third semiconductor module 340 due to the stacking of semiconductor elements 323b and 324b. As a result, the mounting area of ​​each semiconductor module on the wiring substrate 301 can be further reduced.

[0085] In addition, with Figure 7 The electronic device 200 shown is the same, in Figure 8 In the illustrated electronic device 300, the electrical connection wiring 350 extends approximately linearly along the arrangement direction of the first semiconductor module 320, the second semiconductor module 330, and the third semiconductor module 340, i.e., the y-direction. Since the first semiconductor module 320, the second semiconductor module 330, and the third semiconductor module 340 are disposed on the electrical connection wiring 350 and contact the drain pad electrically connected to the drain electrode 72 of the semiconductor element 324b, the mounting area on the wiring substrate 301 can be reduced. Furthermore, in the electronic device 300, the wiring substrate 301 has wiring layers 363 and 365 in its inner layers. Therefore, as... Figure 6The negative-side power path shown can utilize wiring layers 363 and 365. By arranging the wiring constituting the positive-side power path on the substrate surface of the wiring substrate 301 and arranging the wiring constituting the negative-side power path in the inner layer of the substrate, it is not necessary to arrange both the positive-side and negative-side power paths on the same layer of the wiring substrate, thus enabling substrate miniaturization. In addition, by arranging the negative-side power path in the inner layer of the substrate, the degree of freedom in the arrangement of various components arranged on the substrate is increased, making it easier to arrange various components for reducing the wiring distance from the motor connection wiring to the electrical connection wiring and the wiring distance around the semiconductor module. The other components in the electronic device 300 are the same as those in the electronic device 100, so the description is omitted by replacing the reference number in the 100 segment with the 300 segment.

[0086] (Second Implementation)

[0087] Although the first embodiment illustrates a semiconductor module in which multiple semiconductor modules integrate two semiconductor elements constituting the upper and lower arms of the inverter circuit within a resin mold, it is not limited to this. As described in the second embodiment, multiple semiconductor modules may each contain three semiconductor elements.

[0088] like Figure 11 As shown, in the electronic device 400, a first motor output terminal 411, a second motor output terminal 412, and a third motor output terminal 413 are sequentially arranged on the peripheral side (positive x-axis side) of the wiring board 401, from the positive y-axis side toward the negative y-axis side. A first motor connection wiring 414 extends substantially linearly from the first motor output terminal 411 toward the center side (negative x-axis side) of the wiring board 401 where the electrical connection wiring 450 is arranged. A second motor connection wiring 115 extends substantially linearly from the second motor output terminal 412 toward the center side (negative x-axis side) of the wiring board 401 where the electrical connection wiring 450 is arranged. A third motor connection wiring 416 extends substantially linearly from the third motor output terminal 413 toward the center side (negative x-axis side) of the wiring board 401 where the electrical connection wiring 450 is arranged.

[0089] Semiconductor modules 420 and 430 are arranged approximately parallel in the x-direction between the first motor connection wiring 414, the second motor connection wiring 415, and the third motor connection wiring 416 and the electrical connection wiring 450. Semiconductor module 420 is disposed across the first motor connection wiring 414, the second motor connection wiring 415, and the third motor connection wiring 416. Semiconductor module 430 is disposed on the electrical connection wiring 450, which extends approximately linearly in the y-direction. Semiconductor modules 420 and 430 are connected by intermediate wirings 417, 418, and 419, respectively. Intermediate wirings 417, 418, and 419 are portions of the first motor connection wiring 414, the second motor connection wiring 415, and the third motor connection wiring 416, respectively. Semiconductor module 420 is disposed on the peripheral side of the electrical connection wiring 450, while semiconductor module 430 is disposed on the electrical connection wiring 450. Furthermore, semiconductor modules 420 and 430 are positioned on the central side compared to the first motor connection wiring 414, the second motor connection wiring 415, and the third motor connection wiring 416. The drain terminal of the semiconductor module 430 is connected to the electrical connection wiring 450.

[0090] Semiconductor modules 420 and 430 are configured to be relative to Figure 3 , 4 The first semiconductor module 120 shown includes two semiconductor elements 123b and 124b, and a semiconductor module containing three semiconductor elements is further added with the same semiconductor elements. Semiconductor modules 420 and 430 are configured with the three semiconductor elements arranged approximately parallel in the y-direction. When viewed from above, the opposite two sides of the four sides of the generally rectangular upper surface of semiconductor modules 420 and 430 are approximately parallel to the wiring directions of the first motor connection wiring 414, the second motor connection wiring 415, and the third motor connection wiring 416. The drain pads of the three semiconductor elements of semiconductor module 420 are in contact with the first motor connection wiring 414, the second motor connection wiring 415, and the third motor connection wiring 416, respectively. The drain pads of the three semiconductor elements of semiconductor module 430 are in contact with the electrical connection wiring 450. External terminals electrically connected to the source electrodes 71 of the three semiconductor elements included in semiconductor module 430 are connected to the intermediate wirings 417, 418, and 419. Furthermore, although not shown, the external terminals of semiconductor modules 420 and 430 protrude in a direction that is substantially parallel to the wiring direction of the first motor connection wiring 414, the second motor connection wiring 415, and the third motor connection wiring 416, which are respectively connected.

[0091] Semiconductor modules 420 and 430 can serve as Figure 12 (a) and Figure 12(b) shows an inverter circuit containing three semiconductor elements, in which a switch group SP comprising the upper arm of each phase and a switch group SN comprising the lower arm are used in the inverter circuit. More specifically, semiconductor module 420 can be used as switch group SN, and semiconductor module 430 can be used as switch group SP. Furthermore, Figure 12 The drive circuit shown in (a), apart from the configuration of the switch group, is similar to... Figure 6 The driving circuit shown is the same. Additionally, Figure 12 The drive circuit shown in (b) is only different in that it replaces the three resistors RU, RV, and RW, and is connected to ground via a resistor R. Figure 12 (a) is different; the other components are different. Figure 12 (a) Same.

[0092] (Third Implementation)

[0093] Although the first embodiment illustrates an electronic device 100 comprising only a semiconductor module in which multiple semiconductor elements are integrally contained within a resin mold, it is not limited thereto. Figure 13 Like the electronic device 500 shown, it may also include a semiconductor module that contains a single semiconductor element within a resin mold, in addition to a semiconductor module that integrally contains multiple semiconductor elements within a resin mold.

[0094] like Figure 13 As shown, in the electronic device 500, similar to the first embodiment, a first semiconductor module 520 is disposed between the first motor connection wiring 514 and the electrical connection wiring 550, substantially parallel to the wiring direction of the first motor connection wiring 514. In the electronic device 500, a semiconductor module 529 containing a semiconductor element is also disposed on the first motor connection wiring 514.

[0095] Similarly, a second semiconductor module 530 is disposed between the second motor connection wiring 515 and the electrical connection wiring 550, substantially parallel to the wiring direction of the second motor connection wiring 515. A semiconductor module 539 containing a semiconductor element is disposed on the second motor connection wiring 515. A third semiconductor module 540 is disposed between the third motor connection wiring 516 and the electrical connection wiring 550, substantially parallel to the wiring direction of the third motor connection wiring 516. A semiconductor module 549 containing a semiconductor element is disposed on the third motor connection wiring 516. That is, the first semiconductor module 520, the second semiconductor module 530, and the third semiconductor module 540 are disposed on the peripheral side compared to the electrical connection wiring 550, and on the central side compared to the first motor connection wiring 514, the second motor connection wiring 515, and the third motor connection wiring 516.

[0096] Furthermore, semiconductor modules 529, 539, and 549 are configured relative to Figure 3 , 4 The first semiconductor module 120 shown includes two semiconductor elements 123b and 124b, while a semiconductor module includes one semiconductor element. Although not shown, the external terminals of the first semiconductor module 520, the second semiconductor module 530, and the third semiconductor module 540 protrude opposite each other in a direction substantially parallel to the wiring direction of the first motor connection wiring 514, the second motor connection wiring 515, and the third motor connection wiring 516, respectively. The drain terminals of the first semiconductor module 520, the second semiconductor module 530, and the third semiconductor module 540 are joined to the electrical connection wiring 550. The other configurations of the electronic device 500 are the same as those of the electronic device 100, so the description is omitted by replacing the reference number in the 100 segment with the 500 segment.

[0097] Electronic device 500 can be applied to Figure 14 The driving circuit shown. Semiconductor modules 529, 539, and 549 can respectively serve as... Figure 14 The switch group SN, configured as shown, between the switch groups SU, SV, SW and the U, V, W phase windings, is used in the inverter circuit. More specifically, the semiconductor module 420 can be used as switches SSU, SSV, SSW. Furthermore, Figure 14 The drive circuit shown has switches SSU, SSV, and SSW between the switch groups SU, SV, SW and the U, V, W phase windings U, V, W, which is consistent with... Figure 6 The driving circuit shown is different; other components are the same. Figure 6 The driving circuits shown are the same.

[0098] (Fourth Implementation)

[0099] In the fourth embodiment, an electronic device 600 comprising a group of multiple electrical connection wires, motor connection wires, and semiconductor modules disposed therebetween will be described.

[0100] exist Figure 15 In the electronic device 600 shown, the two groups of electrical connection wiring, motor connection wiring, and semiconductor module are arranged to be approximately linearly symmetrical with respect to the central line L1 extending in the x direction and y direction through the wiring substrate 601.

[0101] On the wiring substrate 601, on the positive x-axis side relative to the central line L1, are provided a first motor output terminal 611a, a second motor output terminal 612a, a third motor output terminal 613a, a first motor connection wiring 614a, a second motor connection wiring 615a, a third motor connection wiring 616a, a first semiconductor module 620a, a second semiconductor module 630a, a third semiconductor module 640a, semiconductor modules 629a, 639a, and 649a, an electrical connection wiring 650, and a power supply terminal 660. The power supply terminal 660a is relative to... Figure 13 The power terminal 560 shown is positioned in the positive x-axis direction. The other configurations of the wiring board 601 on the positive x-axis side compared to the center line L1 are the same. Figure 13 Since the components on the wiring board 501 of the electronic device 500 shown are identical, the description is omitted by replacing the reference number of the 500 segment with the 600 segment and further adding the superscript a.

[0102] The wiring substrate 601, on the negative x-axis side relative to the central line L1, includes a first motor output terminal 611b, a second motor output terminal 612b, a third motor output terminal 613b, a first motor connection wiring 614b, a second motor connection wiring 615b, a third motor connection wiring 616b, a first semiconductor module 620b, a second semiconductor module 630b, a third semiconductor module 640b, semiconductor modules 629b, 639b, and 649b, an electrical connection wiring 650, and a power supply terminal 660. The other configurations on the negative x-axis side of the wiring substrate 601 relative to the central line L1 are the same as those on the positive x-axis side (represented by subscript "a") after reversing their positions relative to the central line L1; therefore, the description is omitted by replacing subscript "a" with subscript "b".

[0103] like Figure 15 As shown, in the electronic device 600, a pair of electrical connection wires 650a and 650b are arranged on both sides of the central line L1 of the wiring board 601. A pair of first motor output terminals 611a and 611b, second motor output terminals 612a and 612b, and third motor output terminals 613a and 613b are arranged on the periphery of the wiring board 602 in the positive or negative x-axis direction. Between the electrical connection wires 650a and 650b and the first motor output terminals 611a and 611b, the second motor output terminals 612a and 612b, and the third motor output terminals 613a and 613b, first motor connection wires 614a and 614b, second motor connection wires 615a and 615b, and third motor connection wires 616a and 616b extending substantially linearly in the x-direction are respectively arranged.

[0104] Furthermore, first semiconductor modules 620a and 620b are arranged approximately parallel to the wiring direction of the first motor connection wires 614a and 614b between the first motor connection wires 614a and 614b and the electrical connection wires 650a and 650b, respectively. Semiconductor modules 629a and 629b are respectively disposed on the first motor connection wires 614a and 614b. Second semiconductor modules 630a and 630b are arranged approximately parallel to the wiring direction of the second motor connection wires 615a and 615b between the second motor connection wires 615a and 615b and the electrical connection wires 650a and 650b, respectively. Semiconductor modules 639a and 639b are respectively disposed on the second motor connection wires 615a and 615b. Third semiconductor modules 640a and 640b are respectively arranged between the third motor connection wirings 616a and 616b and the electrical connection wirings 650a and 650b, and are arranged approximately parallel to the wiring direction of the third motor connection wirings 616a and 616b. Semiconductor modules 649a and 649b are respectively disposed on the third motor connection wirings 616a and 616b.

[0105] Specifically, the first semiconductor module 620a, the second semiconductor module 630a, and the third semiconductor module 640a are respectively disposed on the peripheral side compared to the electrical connection wiring 650a, and are disposed on the central side compared to the first motor connection wiring 614a, the second motor connection wiring 615a, and the third motor connection wiring 616a. Furthermore, the first semiconductor module 620b, the second semiconductor module 630b, and the third semiconductor module 640b are respectively disposed on the peripheral side compared to the electrical connection wiring 650b, and are disposed on the central side compared to the first motor connection wiring 614b, the second motor connection wiring 615b, and the third motor connection wiring 616b.

[0106] Furthermore, although not shown, the external terminals of the first semiconductor modules 620a, 620b, the second semiconductor modules 630a, 630b, and the third semiconductor modules 640a, 640b protrude opposite each other in a direction substantially parallel to the wiring direction of the first motor connection wirings 614a, 614b, the second motor connection wirings 615a, 615b, and the third motor connection wirings 616a, 616b, respectively. The drain terminals of the first semiconductor modules 620a, 630a, and 640a are connected to the electrical connection wiring 650a. Additionally, the drain terminals of the first semiconductor modules 620b, 630b, and 640b are connected to the electrical connection wiring 650b.

[0107] (Modified Example)

[0108] like Figure 16As shown in the electronic device 610, the two sets of electrical connection wiring, motor connection wiring, and semiconductor module can also be arranged to be approximately symmetrical about the center O1 in the x and y directions relative to the wiring substrate 601. Figure 16 The superscript "a" indicates the components and Figure 15 The electronic device shown is the same as 600, so the description is omitted.

[0109] The wiring substrate 601, on the negative x-axis side relative to the center O1, includes a first motor output terminal 611c, a second motor output terminal 612c, a third motor output terminal 613c, a first motor connection wiring 614c, a second motor connection wiring 615c, a third motor connection wiring 616c, a first semiconductor module 620c, a second semiconductor module 630c, a third semiconductor module 640c, semiconductor modules 629c, 639c, and 649c, an electrical connection wiring 650, and a power supply terminal 660. The other configurations on the negative x-axis side of the wiring substrate 601 relative to the center O1 are the same as those on the positive x-axis side (represented by subscript "a") rotated 180° in the xy plane with the center O1 as the axis; therefore, the description is omitted by replacing subscript "a" with subscript "c".

[0110] Electronic devices 600 and 610 can be applied to Figure 17 The drive circuit for the three-phase inverters INV1 and INV2, as shown, includes two systems. Figure 17 In the driving circuit shown, the winding group M has a pair of U, V, W phase windings U1, V1, W1 and U, V, W phase windings U2, V2, W2. Figure 17 The components of INV1, etc., indicated by the subscript "1" on the left are circuit group 1 connected to the U, V, W phase windings U1, V1, W1 of winding group M. Figure 17 The subscript "2" on the right indicates that INV2 and other components are circuit group 2 connected to the U, V, and W phase windings U2, V2, and W2 of winding group M. The circuit configurations of circuit groups 1 and 2 are respectively... Figure 14 The drive circuits shown are identical, so the description is omitted by adding subscripts "1" or "2". By being configured as in electronic devices 600 and 610, and having multiple electrical connection wires, motor connection wires, and semiconductor modules arranged between them, it can be applied to inverter circuits of two or more systems.

[0111] (Fifth Implementation)

[0112] like Figure 18 , 19 As shown, it can also be an electronic device 700 that can be applied to an H-bridge circuit in a system. For example... Figure 18As shown, the electronic device 700 includes a first motor output terminal 711, a second motor output terminal 712, a first motor connection wiring 714, a second motor connection wiring 715, a first semiconductor module 720, a second semiconductor module 730, an electrical connection wiring 750, and a power supply terminal 760 on a wiring substrate 701. The first semiconductor module 720 is arranged between the first motor connection wiring 714 and the electrical connection wiring 750, substantially parallel to the wiring direction of the first motor connection wiring 714. The second semiconductor module 730 is arranged between the second motor connection wiring 715 and the electrical connection wiring 750, substantially parallel to the wiring direction of the second motor connection wiring 715. That is, the first semiconductor module 720 and the second semiconductor module 730 are respectively arranged on the peripheral side compared to the electrical connection wiring 750, and on the central side compared to the first motor connection wiring 714 and the second motor connection wiring 715.

[0113] Furthermore, although not shown, the external terminals of the first semiconductor module 720 and the second semiconductor module 730 protrude opposite each other in a direction substantially parallel to the wiring direction of the first motor connection wiring 714 and the second motor connection wiring 715, which are respectively connected. The drain terminals of the first semiconductor module 720 and the second semiconductor module 730 are joined to the electrical connection wiring 750.

[0114] Figure 19 The driving circuit shown is in Figure 6 The three-phase motor drive circuit shown is used as a two-phase motor drive circuit, which is different from... Figure 6 The circuits are different, but the rest are the same. Winding group M has phase A winding A and phase B winding B, each with its first terminal connected at the neutral point. Inverter INV includes switch groups SA and SB, which contain a pair of upper and lower arm switches. The second terminal of phase A winding A is connected to the connection point of the upper and lower arm switches in switch group SA. The second terminal of phase B winding B is connected to the connection point of the upper and lower arm switches in switch group SB.

[0115] The high-potential terminal H of the upper arm switches of switch groups SA and SB is connected to the positive terminal of the battery V, which serves as the DC power supply, via power relay SR, reverse connection protection relay SC, and inductor L. A bypass capacitor C is connected in parallel with battery V. The negative terminal of battery V is connected to ground. The low-potential terminal of the lower arm switches of switch groups SA and SB is connected to ground via resistors RA and RB.

[0116] A first semiconductor module 720 can be used as a semiconductor module that integrates the upper and lower arm switches of switch group SA. A second semiconductor module 730 can be used as a semiconductor module that integrates the upper and lower arm switches of switch group SB. The electronic device 700 can be applied to... Figure 19The diagram shows an H-bridge circuit for a system.

[0117] (Sixth Implementation Method)

[0118] like Figure 20 As shown, an electronic device 800 capable of being applied to an H-bridge circuit in two systems can also be provided. The electronic device 800 includes, on a wiring substrate 801, first motor output terminals 811a and 811b, second motor output terminals 812a and 812b, first motor connection wiring 814a and 814b, second motor connection wiring 815a and 815b, first semiconductor module 820a and 820b, second semiconductor module 830a and 830b, electrical connection wiring 850, and a power supply terminal 860.

[0119] In the electronic device 800, a generally L-shaped electrical connection wiring 850 is provided at approximately the center of a wiring substrate 801. The electrical connection wiring 850 includes a first portion 850a extending in the y direction from approximately the center of the wiring substrate 801 in the x direction, and a second portion 850b extending in the x direction from approximately the center of the wiring substrate 801 in the y direction. The first portion 850a and the second portion 850b are integrally formed.

[0120] A first motor output terminal 811a and a second motor output terminal 812a are disposed on the periphery of the wiring substrate 801 in the positive x-axis direction. Between the first portion 850a of the electrical connection wiring and the first motor output terminal 811a and the second motor output terminal 812a, a first motor connection wiring 814a and a second motor connection wiring 815a extending substantially linearly in the x-direction are disposed. Furthermore, a first semiconductor module 820a is disposed between the first motor connection wiring 814a and the first portion 850a of the electrical connection wiring, substantially parallel to the wiring direction of the first motor connection wiring 814a. A second semiconductor module 830a is disposed between the second motor connection wiring 815a and the first portion 850a of the electrical connection wiring, substantially parallel to the wiring direction of the second motor connection wiring 815a.

[0121] A first motor output terminal 811b and a second motor output terminal 812b are disposed on the periphery of the wiring substrate 801 in the positive direction of the y-axis. Between the second portion 850b of the electrical connection wiring and the first motor output terminal 811b and the second motor output terminal 812b, a first motor connection wiring 814b and a second motor connection wiring 815b extending substantially linearly in the y-direction are disposed. Furthermore, a first semiconductor module 820b is disposed between the first motor connection wiring 814b and the second portion 850b of the electrical connection wiring, substantially parallel to the wiring direction of the first motor connection wiring 814b. A second semiconductor module 830b is disposed between the second motor connection wiring 815b and the second portion 850b of the electrical connection wiring, substantially parallel to the wiring direction of the second motor connection wiring 815b. That is, the first semiconductor modules 820a, 820b and the second semiconductor modules 830a, 830b are respectively disposed on the peripheral side compared with the electrical connection wiring 850, and are disposed on the central side compared with the first motor connection wiring 814a, 814b and the second motor connection wiring 815a, 815b.

[0122] The first semiconductor modules 820a, 820b and the second semiconductor modules 830a, 830b are semiconductor modules with the same structure as the first semiconductor module 120 of the first embodiment. The first semiconductor module 820a and the second semiconductor module 830a each contain two semiconductor elements within a resin mold, which are arranged in a substantially parallel orientation in the x-direction. The first semiconductor module 820b and the second semiconductor module 830b each contain two semiconductor elements within a resin mold, which are arranged in a substantially parallel orientation in the y-direction. Although not shown, the external terminals of the first semiconductor modules 820a, 820b and the second semiconductor modules 830a, 830b protrude opposite each other in a direction substantially parallel to the wiring directions of the first motor connection wirings 814a, 814b and the second motor connection wirings 815a, 815b, respectively. The drain terminals of the first semiconductor modules 820a and the second semiconductor modules 830a are joined to the electrical connection wiring 850a. The drain terminals of the first semiconductor module 820b and the second semiconductor module 830b are connected to the electrical connection wiring 850b.

[0123] Electronic device 800 can be applied to Figure 21 The drive circuit shown is as shown. Figure 21 The driving circuit shown is an H-bridge circuit for two systems. The winding group M has a pair of A and B phase windings A1, B1 and A and B phase windings A2, B2. Figure 21 The subscript "1" on the left indicates that each component of INV1, etc., is circuit group 1 connected to the A and B phase windings A1 and B1 of winding group M. Figure 21The subscript "2" on the right indicates that each component of INV2, etc., is circuit group 2 connected to the A and B phase windings A2 and B2 of winding group M. Inverter INV1 includes switch groups SA1 and SB1, which include a pair of upper arm switches and lower arm switches. Inverter INV2 includes switch groups SA2 and SB2, which also include a pair of upper arm switches and lower arm switches. The second terminal of phase A winding A1 is connected to the connection point of the upper arm switch and lower arm switch in switch group SA1. The second terminal of phase B winding B1 is connected to the connection point of the upper arm switch and lower arm switch in switch group SB1. The second terminal of phase A winding A2 is connected to the connection point of the upper arm switch and lower arm switch in switch group SA2. The second terminal of phase B winding B2 is connected to the connection point of the upper arm switch and lower arm switch in switch group SB2.

[0124] The high-potential terminal H of the upper arm switches of switch groups SA1, SB1, SA2, and SB2 is connected to the positive terminal of the battery V, which serves as the DC power supply, via power relay SR, reverse connection protection relay SC, and inductor L. A bypass capacitor C is connected in parallel with battery V. The negative terminal of battery V is connected to ground. The low-potential terminal of the lower arm switches of switch groups SA1 and SB1 is connected to ground via resistors RA1 and RB1. The low-potential terminal of the lower arm switches of switch groups SA2 and SB2 is connected to ground via resistors RA2 and RB2.

[0125] A first semiconductor module 820a can be used as a semiconductor module that integrates the upper and lower arm switches of switch group SA1. A second semiconductor module 830a can be used as a semiconductor module that integrates the upper and lower arm switches of switch group SB1. A first semiconductor module 820b can be used as a semiconductor module that integrates the upper and lower arm switches of switch group SA2. A second semiconductor module 830b can be used as a semiconductor module that integrates the upper and lower arm switches of switch group SB2. By connecting the motor connection wiring of the two groups and the semiconductor modules to the same electrical connection wiring, as in electronic device 800, an H-bridge circuit can be applied to both systems.

[0126] (Modified Example)

[0127] In the sixth embodiment, the two sets of motor connection wiring and semiconductor modules are connected to the same electrical connection wiring, but this is not a limitation. Alternatively, as... Figure 22 Like the electronic device 900 shown, three or more sets of motor connection wires and semiconductor modules are connected to the same electrical connection wire.

[0128] The electronic device 900 includes, on a wiring substrate 901, first motor output terminals 911a and 911b, second motor output terminals 912a and 912b, first motor connection wiring 914a and 914b, second motor connection wiring 915a and 915b, first semiconductor module 920a and 920b, second semiconductor module 930a and 930b, electrical connection wiring 950, and power supply terminal 960. In the electronic device 900, a generally rectangular electrical connection wiring 950 with its long side in the y-direction is located approximately at the center of the wiring substrate 901.

[0129] A first motor output terminal 911a and a second motor output terminal 912a are disposed on the periphery of the wiring substrate 901 in the positive x-axis direction. Between the electrical connection wiring 950 and the first motor output terminal 911a and the second motor output terminal 912a, a first motor connection wiring 914a and a second motor connection wiring 915a extending substantially linearly in the x-direction are disposed. Furthermore, a first semiconductor module 920a is disposed between the first motor connection wiring 914a and the electrical connection wiring 950, substantially parallel to the wiring direction of the first motor connection wiring 914a. A second semiconductor module 930a is disposed between the second motor connection wiring 915a and the electrical connection wiring 950, substantially parallel to the wiring direction of the second motor connection wiring 915a.

[0130] A first motor output terminal 911b and a second motor output terminal 912b are disposed on the periphery of the wiring substrate 901 in the positive direction of the y-axis. Between the electrical connection wiring 950 and the first motor output terminal 911b and the second motor output terminal 912b, a first motor connection wiring 914b and a second motor connection wiring 915b extending substantially linearly in the y-direction are disposed. Furthermore, a first semiconductor module 920b is disposed between the first motor connection wiring 914b and the electrical connection wiring 950, substantially parallel to the wiring direction of the first motor connection wiring 914b. A second semiconductor module 930b is disposed between the second motor connection wiring 915b and the electrical connection wiring 950, substantially parallel to the wiring direction of the second motor connection wiring 915b.

[0131] A first motor output terminal 911c and a second motor output terminal 912c are disposed on the peripheral side of the wiring substrate 901 in the negative x-axis direction. Between the electrical connection wiring 950 and the first motor output terminal 911c and the second motor output terminal 912c, a first motor connection wiring 914c and a second motor connection wiring 915c extending substantially linearly in the x-direction are disposed. Furthermore, a first semiconductor module 920c is disposed between the first motor connection wiring 914c and the electrical connection wiring 950, substantially parallel to the wiring direction of the first motor connection wiring 914c. A second semiconductor module 930c is disposed between the second motor connection wiring 915c and the electrical connection wiring 950, substantially parallel to the wiring direction of the second motor connection wiring 915c.

[0132] The first semiconductor modules 920a, 920b, 920c and the second semiconductor modules 930a, 930b, 930c are semiconductor modules with the same structure as the first semiconductor module 120 in the first embodiment. The first semiconductor module 920a and the second semiconductor module 930a each contain two semiconductor elements within a resin mold, and these two semiconductor elements are arranged in a substantially parallel configuration in the x-direction with the same orientation. The first semiconductor module 920b and the second semiconductor module 930b each contain two semiconductor elements within a resin mold, and these two semiconductor elements are arranged in a substantially parallel configuration in the y-direction with the same orientation. The first semiconductor module 920c and the second semiconductor module 930c each contain two semiconductor elements within a resin mold, and these two semiconductor elements are arranged in a substantially parallel configuration in the x-direction with the same orientation. Although not shown in the figure, the external terminals of the first semiconductor modules 920a, 920b, 920c and the second semiconductor modules 930a, 930b, 930c protrude opposite each other in a direction that is substantially parallel to the wiring direction of the first motor connection wiring 914a, 914b, 914c and the second motor connection wiring 915a, 915b, 915c respectively.

[0133] Electronic device 900 can be applied to Figure 23 The H-bridge circuits of the three systems shown are as follows. The winding group M has A and B phase windings A1 and B1, A and B phase windings A2 and B2, and A and B phase windings A3 and B3. Figure 23 The subscript “1” indicates that each component of INV1, etc., is circuit group 1 connected to the A and B phase windings A1 and B1 of winding group M. Figure 23 The components of INV2, etc., represented by the subscript "2" are circuit groups 2 connected to the A and B phase windings A2 and B2 of winding group M. Figure 23 The subscript “3” indicates that each component of INV3, etc., is circuit group 3 connected to the A and B phase windings A3 and B3 of winding group M.

[0134] Inverter INV1 includes switch groups SA1 and SB1, which contain a pair of upper and lower arm switches. Inverter INV2 includes switch groups SA2 and SB2, which contain a pair of upper and lower arm switches. Inverter INV3 includes switch groups SA3 and SB3, which contain a pair of upper and lower arm switches. The second terminal of phase A winding A1 is connected to the connection point of the upper and lower arm switches in switch group SA1. The second terminal of phase B winding B1 is connected to the connection point of the upper and lower arm switches in switch group SB1. The second terminal of phase A winding A2 is connected to the connection point of the upper and lower arm switches in switch group SA2. The second terminal of phase B winding B2 is connected to the connection point of the upper and lower arm switches in switch group SB2. The second terminal of phase A winding A3 is connected to the connection point of the upper and lower arm switches in switch group SA3. The second terminal of phase B winding B3 is connected to the connection point of the upper and lower arm switches in switch group SB3.

[0135] The high-potential terminal H of the upper arm switches of switch groups SA1, SB1, SA2, SB2, SA3, and SB3 is connected to the positive terminal of the battery V, which serves as the DC power supply, via the power relay SR, the reverse connection protection relay SC, and the inductor L. A bypass capacitor C is connected in parallel with the battery V. The negative terminal of the battery V is connected to ground. The low-potential terminal of the lower arm switches of switch groups SA1 and SB1 is connected to ground via resistors RA1 and RB1. The low-potential terminal of the lower arm switches of switch groups SA2 and SB2 is connected to ground via resistors RA2 and RB2. The low-potential terminal of the lower arm switches of switch groups SA3 and SB3 is connected to ground via resistors RA3 and RB3.

[0136] A first semiconductor module 920a can be used as a semiconductor module that integrates the upper arm switch and lower arm switch of switch group SA1. A second semiconductor module 930a can be used as a semiconductor module that integrates the upper arm switch and lower arm switch of switch group SB1. A first semiconductor module 920b can be used as a semiconductor module that integrates the upper arm switch and lower arm switch of switch group SA2. A second semiconductor module 930b can be used as a semiconductor module that integrates the upper arm switch and lower arm switch of switch group SB2. A first semiconductor module 920c can be used as a semiconductor module that integrates the upper arm switch and lower arm switch of switch group SA3. A second semiconductor module 930c can be used as a semiconductor module that integrates the upper arm switch and lower arm switch of switch group SB3.

[0137] According to the above embodiments, the following effects can be obtained. A first semiconductor module 920c can be used as the semiconductor module that integrates the upper arm switch and the lower arm switch of the switch assembly SA3. A second semiconductor module 930c can be used as the semiconductor module that integrates the upper arm switch and the lower arm switch of the switch assembly SB3.

[0138] (Seventh Implementation)

[0139] In the seventh embodiment, the same as in the fourth embodiment, an electronic device 1000 that provides a group of multiple electrical connection wires, motor connection wires, and semiconductor modules disposed therebetween will be described.

[0140] exist Figure 24 , 25 In the electronic device 1000 shown, the two sets of electrical connection wiring, motor connection wiring and semiconductor module are arranged to be approximately linearly symmetrical with respect to the central line L10 extending in the y direction from approximately the center of the wiring substrate 1001 in the x direction.

[0141] On the positive x-axis side of the wiring substrate 1001 relative to the central line L10, there are a first motor output terminal 1011a, a second motor output terminal 1012a, a third motor output terminal 1013a, a first motor connection wiring 1014a, a second motor connection wiring 1015a, a third motor connection wiring 1016a, a first semiconductor module 1020a, a second semiconductor module 1030a, a third semiconductor module 1040a, semiconductor modules 1029a, 1039a, and 1049a, an electrical connection wiring 1050a, and an integrated circuit 1060a. The integrated circuit 1060a performs switching control on the first semiconductor module 1020a, the second semiconductor module 1030a, and the third semiconductor module 1040a.

[0142] On the negative x-axis side of the wiring substrate 1001 relative to the central line L10, there are a first motor output terminal 1011b, a second motor output terminal 1012b, a third motor output terminal 1013b, a first motor connection wiring 1014b, a second motor connection wiring 1015b, a third motor connection wiring 1016b, a first semiconductor module 1020b, a second semiconductor module 1030b, a third semiconductor module 1040b, semiconductor modules 1029b, 1039b, and 1049b, an electrical connection wiring 1050b, and an integrated circuit 1060b. The integrated circuit 1060b performs switching control on the first semiconductor module 1020b, the second semiconductor module 1030b, and the third semiconductor module 1040b.

[0143] The other configurations of the wiring substrate 1001 on the negative x-axis side relative to the central line L1 are substantially the same as those on the positive x-axis side (represented by subscript "a") after reversing them relative to the central line L10. Therefore, the description is omitted by replacing subscript "a" with subscript "b". On the wiring substrate 1001, semiconductor modules such as first semiconductor modules 1020a and 1020b, and an arithmetic unit such as integrated circuits 1060a and 1060b that control the operation of an electric motor are mounted on the same substrate. By arranging the drive circuit composed of semiconductor modules and the control circuit of the arithmetic unit on the same substrate, in addition to the miniaturization effect of the product, noise suppression effects resulting from shortening the wiring of high-frequency signal lines can also be obtained. Furthermore, the configuration that functions as the arithmetic unit only needs to be mounted on the same substrate as the first semiconductor modules 1020a and 1020b, etc., either on the same surface as the mounting surface of the first semiconductor modules 1020a and 1020b, etc., or on their back side. Specifically, as... Figure 24 , 25 As shown, integrated circuits 1060a and 1060b, which function as arithmetic units, can be mounted on the same surface as the mounting surface of the first semiconductor modules 1020a and 1020b, while the microcomputer, which functions as the main arithmetic unit, is mounted on its back side.

[0144] like Figure 24 As shown, in the electronic device 1000, a pair of electrical connection wires 1050a and 1050b are arranged on both sides of the central line L10 of the wiring board 1001. A pair of first motor output terminals 1011a and 1011b, second motor output terminals 1012a and 1012b, and third motor output terminals 1013a and 1013b are arranged on the periphery of the wiring board 1002 in the positive or negative x-axis direction. Between the electrical connection wires 1050a and 1050b and the first motor output terminals 1011a and 1011b, the second motor output terminals 1012a and 1012b, and the third motor output terminals 1013a and 1013b, first motor connection wires 1014a and 1014b, second motor connection wires 1015a and 1015b, and third motor connection wires 1016a and 1016b extending substantially linearly in the x-direction are respectively arranged.

[0145] In the electronic device 1000, first semiconductor modules 1020a and 1020b, second semiconductor modules 1030a and 1030b, and third semiconductor modules 1040a and 1040b are used below them. Figure 24 , 25The semiconductor module has electrodes of two semiconductor elements exposed from the resin mold (shown on the positive z-axis side). In the seventh embodiment, one of the two exposed electrodes of the two semiconductor elements is connected to the first motor connection wiring 1014a, 1014b, the second motor connection wiring 1015a, 1015b, and the third motor connection wiring 1016a, 1016b, and the other is connected to the electrical connection wiring 1050a, 1050b.

[0146] As an example of a semiconductor module that can be used as a first semiconductor module 1020a, 1020b, a second semiconductor module 1030a, 1030b, and a third semiconductor module 1040a, 1040b, semiconductor module 1200 is as follows: Figures 26-29 As shown.

[0147] like Figures 26-29 As shown, the semiconductor module 1200 includes a first semiconductor element 1233 and a second semiconductor element 1243, a resin mold 1220 that integrally seals the first semiconductor element 1233 and the second semiconductor element 1243, conductive components 1201 to 1205, and conductive components 1211, 1212, 1231, and 1241. Figures 26-29 The x and y directions shown represent the sides of the semiconductor module 1200, and the xy plane represents the planar direction of the semiconductor module 1200. The z direction is the up-down direction orthogonal to the planar direction.

[0148] Figure 26 (a) is a top view of semiconductor module 1200. Figure 26 (b) is a view of the semiconductor module 1200 from below. Figure 27 This is a top-down view of the components within the resin mold 1220 of the semiconductor module 1200. Figure 28 , 29 This is a cross-sectional view of the components within the resin mold 1220 of the semiconductor module 1200. Furthermore, in Figures 27-29 In the diagram, the location of the resin mold 1220 is indicated by a dashed line.

[0149] like Figures 26-29 As shown, within the resin mold 1220, the second semiconductor element 1243 is integrally sealed in a configuration arranged with its orientation in the x-axis direction, rotated 180° relative to the first semiconductor element 1233 with the vertical direction (z-direction) as the center. The first semiconductor element 1233 and the second semiconductor element 1243 are semiconductor elements with the same structure, shape, and size, and are roughly rectangular when viewed from above.

[0150] On the side of the first semiconductor element 1233, a conductive component 1231, a bonding component 1232, the first semiconductor element 1233, a bonding component 1234, and a conductive component 1211 are arranged sequentially from top to bottom. On the side of the second semiconductor element 1243, a conductive component 1241, a bonding component 1242, the second semiconductor element 1243, a bonding component 1244, and a conductive component 1212 are arranged sequentially from top to bottom. Corner pins 1206 to 1209 are arranged near the four corners of the resin mold 1220.

[0151] When viewed from below, the entire underside of the conductive components 1201-1205 and the conductive component 1211 is exposed from the resin mold 1220.

[0152] In semiconductor module 1200, such as Figure 26 As shown in (b), the conductive components 1201 to 1205, which function as gate terminals, source terminals, or drain terminals, are exposed on the lower surface side (negative direction of the z-axis) of the resin mold 1220, but do not protrude in the y-direction, which is the side.

[0153] The conductive component 1212 includes a lower section 1212a that is not exposed from the resin mold 1220, and a higher section 1212b that is exposed from the resin mold 1220. The higher section 1212b is a generally rectangular portion disposed below and around the second semiconductor element 1243. The lower section 1212a is an elongated rectangular portion extending from the end of the higher section 1212b toward the side where the first semiconductor element 1233 is disposed (the negative x-axis side).

[0154] The conductive component 1231 is generally rectangular in top view and includes an extension 1231a and a pad portion 1231b. The pad portion 1231b is located on the upper surface side of the first semiconductor element 1233 and is bonded to the upper surface side (source electrode side) of the first semiconductor element 1233 via a bonding member 1232. The extension portion 1231a extends from the pad portion 1231b in the negative y-axis direction, extending above the lower section 1212a of the conductive component 1212. The lower end face of the extension portion 1231a is bonded to the upper surface of the lower section 1212a via a bonding member 1234. Through the conductive components 1231 and 1212, the lower surface side, i.e., the drain electrode side, of the second semiconductor element 1243 is electrically connected to the upper surface side, i.e., the source electrode side, of the first semiconductor element 1233.

[0155] The conductive component 1241 is similar to the conductive component 1231, and is generally rectangular in top view, having an extension 1241a and a pad portion 1241b. The pad portion 1241b is located on the upper surface side of the second semiconductor element 1243 and is bonded to the upper surface side (source electrode side) of the second semiconductor element 1243 via a bonding member 1242. The extension portion 1241a extends from the pad portion 1241b in the positive direction of the y-axis and extends above the conductive component 1205. The lower end face of the extension portion 1241a is bonded to the upper surface of the conductive component 1205 via a bonding member 1244.

[0156] Conductive component 1201 is connected to conductive component 1211, which functions as the drain pad of the first semiconductor element 1233, and functions as the drain terminal of the first semiconductor element 1233. Conductive component 1202 is electrically connected to the gate electrode of the first semiconductor element 1233 and functions as the gate terminal of the first semiconductor element 1233. Conductive component 1203 is electrically connected to the gate electrode of the second semiconductor element 1243 and functions as the gate terminal of the second semiconductor element 1243. Angle pins 1206 to 1209 function as potential-free terminals that are not connected to any electrode of the first semiconductor element 1233 or the second semiconductor element 1243.

[0157] Conductive component 1204 is connected to conductive component 1212, which functions as the drain pad of the second semiconductor element 1243. Conductive component 1212 is electrically connected to the drain electrode of the second semiconductor element 1243 and the source electrode of the first semiconductor element 1233, so conductive component 1204 functions as both the source terminal of the first semiconductor element 1233 and the drain terminal of the second semiconductor element 1243. Conductive component 1205 is electrically connected to conductive component 1241, which functions as the source pad of the second semiconductor element 1243, and functions as the drain terminal of the second semiconductor element 1243.

[0158] like Figures 26-29 As shown, a low section 1212a is provided in the y-direction, opposite to the first semiconductor element 1233 and the conductive components 1201 and 1202, which function as gate and drain terminals, respectively. Furthermore, the low section 1212a is covered by a resin mold 1220 on the lower surface of the semiconductor module 1200, resulting in an area on the surface of the resin mold 1220 where no components are exposed. This area corresponds to a common wiring area.

[0159] The common wiring region is a strip-shaped area extending approximately straight from one side to the other on the surface of the resin mold 1220 where the conductive component 1211 is exposed. The conductive component 1211 is present within the common wiring region, and there are no conductive components other than the conductive component 1201 that are at the same potential as the conductive component 1211. Therefore, if the semiconductor module 1200 is used as... Figure 24 The first semiconductor module 1020a, 1020b, the second semiconductor module 1030a, 1030b, and the third semiconductor module 1040a, 1040b shown in Figure 25 are arranged on both sides of the central line L10, with three semiconductor modules 1200 arranged in the same orientation in the y-direction, approximately orthogonal to the long side opposite in the y-direction. This ensures a common wiring area that runs in a strip along the y-direction covering each of the three semiconductor modules. The common wiring area is a roughly rectangular area extending in the y-direction on the side of the central line L10 compared to the conductive component 1202.

[0160] Within the shared wiring area, only the conductive component 1211 and the conductive component 1201 at the same potential as the conductive component 1211 are exposed from the resin mold 1220. Therefore, by providing a shared wiring area that connects to the three conductive components 1211 respectively contained in the three semiconductor modules arranged on both sides of the central line L10, the three conductive components 1211 can be electrically connected to each other. Furthermore, the wiring width of the shared wiring (the width in the x direction orthogonal to the y direction, which is the wiring direction) is wider than the wiring width (width in the x direction) of the conductive components 1201 to 1203, and the width in the x direction of the shared wiring area ensures that the width of the shared wiring can be provided. The conductive component 1211 corresponds to an electrode for the shared wiring.

[0161] In the semiconductor module 1200, the components constituting the semiconductor module 1200 (multiple semiconductor elements, multiple conductive parts, etc.) are configured such that, when a common wiring electrode (conductive part 1211) is connected to a common wiring, the common wiring can be provided from one opposite side to the other on the surface of the resin mold exposing the common wiring electrode, without being electrically connected to non-common wiring electrodes (conductive parts 1201-1205, 1212). Therefore, as Figure 24 , 25 As shown, three semiconductor modules 1200 arranged on each side of the central line L10 can be electrically connected to each other on the mounting surface side of the semiconductor module 1200. As a result, the wiring space on the side of the semiconductor module 1200 can be reduced, which can help to miniaturize the wiring substrate 1001. In addition, the wiring taken out on the side of the semiconductor element to connect the three semiconductor elements can be omitted. As a result, the wiring area is reduced and the wiring resistance is reduced, which can suppress the heat generated by the wiring.

[0162] Furthermore, the semiconductor module 1200 may also have terminals related to the transmission and reception of drive signals for transistors (more specifically, IGBTs) formed by semiconductor elements 1233 and 1243 within it. When mounting the semiconductor module 1200 with solder, even if one of the transistor drive signal transmission and reception terminals breaks due to thermal stress, the presence of other unbroken terminals prevents poor electrical connection. Additionally, it is preferable that the transistor drive signal transmission and reception terminals are terminals other than pins 1206 to 1209. Pins 1206 to 1209 are preferably used for purposes other than high-current paths, drive signals, etc., which are related to the main functions of the semiconductor module 1200. Specifically, they can be suitably used as terminals for applications such as non-potential terminals, connection terminals for noise reduction components, or terminals for protection components.

[0163] (Modified Example)

[0164] exist Figure 24 , 25 In the example, the first semiconductor module 1020a, the second semiconductor module 1030a, and the third semiconductor module 1040a are arranged in a straight line in the y direction at approximately the same position in the x direction. Similarly, the first semiconductor module 1020b, the second semiconductor module 1030b, and the third semiconductor module 1040b are also arranged in a straight line in the y direction at approximately the same position in the x direction, but this is not a limitation.

[0165] exist Figure 30 Electronic device 1100 is shown as an example of other electronic devices that have multiple electrical connection wires, motor connection wires, and a group of semiconductor modules arranged in front of them. Figure 30 In the electronic device 1100 shown, similar to the electronic device 1000, the two groups of electrical connection wiring, motor connection wiring, and semiconductor module are arranged to be approximately linearly symmetrical with respect to the central line L11 extending in the y direction from approximately the center of the wiring substrate 1101 in the x direction.

[0166] In electronic device 1100, the positions of the first semiconductor modules 1120a and 1120b, the second semiconductor modules 1130a and 1130b, the semiconductor modules 1129b and 1139b, and the semiconductor module 1139a differ from those in electronic device 1000. Furthermore, due to the different positions of the semiconductor modules, the shapes of the electrical connection wirings 1150a and 1150b, the first motor connection wirings 1114a and 1114b, and the second motor connection wiring 1115a differ from those in electronic device 1000. Other configurations are the same as in electronic device 1000, so the description is omitted by replacing the reference number in the 1000 segment with the 1100 segment.

[0167] In electronic device 1100, the second semiconductor module 1130a and the third semiconductor module 1140a are positioned approximately at the same location in the x-direction, but the position of the first semiconductor module 1120a is offset towards the periphery (positive x-direction) of the wiring substrate 1101 compared to the second semiconductor module 1130a and the third semiconductor module 1140a. To connect the first semiconductor module 1120a, the second semiconductor module 1130a, and the third semiconductor module 1140a, the shape of the electrical connection wiring 1150a protrudes towards the periphery of the wiring substrate 1101 from the position of the first semiconductor module 1120a, which differs from the shape of the electrical connection wiring 1050a.

[0168] Furthermore, although the second semiconductor module 1130b and the third semiconductor module 1140b are roughly at the same position in the x-direction, the position of the first semiconductor module 1120b is offset towards the periphery of the wiring substrate 1101 (the negative x-direction side) compared to the second semiconductor module 1130b and the third semiconductor module 1140b. To connect the first semiconductor module 1120b, the second semiconductor module 1130b, and the third semiconductor module 1140b, the shape of the electrical connection wiring 1150b protrudes towards the periphery of the wiring substrate 1101 from the position of the first semiconductor module 1120b, which differs from the shape of the electrical connection wiring 1050b.

[0169] Like the electronic device 1100, even if the first to third semiconductor modules connected by electrical connection wiring are not arranged in a straight line, the first to third semiconductor modules can be electrically connected by deforming the shape of the electrical connection wiring in accordance with the position of the first to third semiconductor modules.

[0170] Furthermore, electronic devices 1000 and 1100 may also have a metal casing on the side opposite to the wiring substrate via the first to third semiconductor modules. For example, such as Figure 31 As shown, it can also be configured as an electronic device including a semiconductor module 1200, a wiring substrate 1250, and a housing 1270. The semiconductor module 1200, when mounted on the wiring substrate 1250, functions as follows: Figure 26 The upper surface side (the positive z-axis side) shown is set in a way that is below. Figure 31 The housing 1270 is shown with an opening at the top (negative z-axis direction). The upper surface of the housing 1270 is covered by the wiring substrate 1250.

[0171] The wiring substrate 1250 includes a substrate portion 1251, a wiring portion 1253, and a resist portion 1252 disposed around the wiring portion 1253. The wiring portion 1253 and the resist portion 1252 are disposed on the surface of the substrate portion 1251 in the positive z-axis direction, forming a wiring pattern. A bonding member 1262 is disposed in contact with the upper surface of the conductive wiring portion 1253, and the semiconductor module 1200 is bonded to the wiring substrate 1250 via the bonding member 1262. More specifically, conductive members 1211 and 1212 are bonded and fixed to the wiring portion 1253 via the bonding member 1262. The bonding member 1262 is made of, for example, solder material. The resist portion 1252 is made of, for example, an anti-corrosion resin material such as epoxy resin. The housing 1270 is formed of a metal such as aluminum.

[0172] like Figure 31 As shown, the side of the semiconductor module 1200 opposite to the wiring substrate 1250, i.e., the reverse mounting surface, is the surface in the positive z-axis direction. This surface is covered by a resin mold 1220 made of a high-heat-dissipation resin material, and the conductive components are not exposed. The side of the resin mold 1220 opposite to the wiring substrate 1250 is in contact with the housing 1270. The depth of the housing 1270 (the height of the inner wall surface in the z-direction) is approximately equal to the combined thickness (the length in the z-direction) of the semiconductor module 1200 and the bonding components 1261 and 1262.

[0173] The resin mold 1220 is made of a high heat dissipation resin material, so heat generated in the semiconductor module 1200 and the wiring substrate 1250 can be dissipated through the resin mold 1220. Furthermore, since the resin mold 1220 is in contact with the housing 1270, heat generated in the semiconductor module 1200 and the wiring substrate 1250 can be efficiently dissipated to the housing 1270 through the resin mold 1220.

[0174] exist Figure 32 The electronic device 183 is shown as another example of a state in which a semiconductor module 1200 is mounted on a wiring substrate 1250. The semiconductor module 1200 and... Figure 31 Similarly, when mounted on the wiring board 1250, in the following state... Figure 26 The upper surface side (the positive z-axis side) shown is set in a way that is below. Figure 32 The housing 1271 has an opening at the top (negative z-axis direction). The upper surface of the housing 1271 is covered by the wiring substrate 1250.

[0175] exist Figure 32Within housing 1271, semiconductor module 1200 is housed with its sides (x and y directions) and bottom (positive z-axis direction) covered by heat dissipation component 1280. Housing 1271 is constructed identically to housing 1270 except for its depth. The depth of housing 1271 is approximately the same as the sum of the thicknesses of semiconductor module 1200 and bonding components 1261, 1262 plus the thickness dg of heat dissipation component 1280. Even if there is a deviation due to design tolerances in the difference between the thickness of semiconductor module 1200 and bonding components 1261, 1262 and the depth of housing 1271, the heat dissipation path to housing 1271 can be ensured by adjusting the thickness dg of heat dissipation component 1280, which fills the space between housing 1271 and semiconductor module 1200.

[0176] The heat dissipation component 1280 is made of a gel-like material such as resin or silicon, or a high-heat-dissipation material such as a filler mixed in an adhesive to improve heat dissipation. For example, a composite oxide material with high thermal conductivity, such as alumina, can be selected as the filler for the high-heat-dissipation material. The thermal conductivity of the heat dissipation component 1280 can be adjusted by changing the type and percentage of the filler.

[0177] Preferably, the heat dissipation component 1280 is adjusted to have a thermal conductivity equal to or higher than that of the resin mold 1220. For example, if the thermal conductivity of the resin mold 1220 is set to km and the thermal conductivity of the heat dissipation component 1280 is set to kg, then km ≥ 2 W / (m·K) is preferred, and km ≥ 3 W / (m·K) is particularly preferred. Furthermore, kg ≥ km is sufficient, and kg > km is preferred. Conventionally, in semiconductor modules with exposed electrodes on the reverse mounting surface, based on the idea of ​​dissipating heat from the exposed electrodes, it is not necessary to increase the thermal conductivity of the resin mold, and it is as low as less than 1 W / (m·K). In contrast, by using a resin mold 1220 with higher thermal conductivity as in this embodiment, even if the electrodes of the semiconductor module 1200 are covered by the resin mold 1220, the heat generated in the semiconductor module 1200 can be efficiently dissipated to the housings 1270 and 1271. Furthermore, by making the thermal conductivity (km) and (kg) higher than the thermal conductivity of the wiring substrate 1250 side (e.g., the thermal conductivity of the resist portion 1252), heat can be dissipated more efficiently to the housing 1270 and 1271 side. In addition, the thermal conductivity of the aluminum housing 1270 and 1271 is about 100 to 300 W / (m·K), which is significantly improved relative to km and kg.

[0178] Furthermore, since the reverse mounting surface of the semiconductor module 1200 is covered by the resin mold 1220, the conductive components that function as electrodes are not exposed. Therefore, compared to semiconductor modules where the electrodes are exposed on the reverse mounting surface, the thickness dg of the heat dissipation component 1280 can be reduced. The resin mold 1220 has higher insulation properties than the heat dissipation component 1280, requiring a smaller thickness to ensure insulation. Therefore, compared to semiconductor modules where the electrodes are exposed on the reverse mounting surface, the distance between the lower surface of the electrodes (conductive components 1231 and 1241 in this embodiment) on the reverse mounting surface side of the semiconductor module 1200 and the upper surface of the housing 1271 can be shortened. As a result, the mounting portion of the semiconductor module 1200 can be miniaturized compared to conventional designs.

[0179] In addition, Figure 31 , 32 In this paper, the installation state of the semiconductor module 1200 of the seventh embodiment has been described. However, for the semiconductor modules described in the above embodiments where the reverse mounting surface is covered by a resin mold, it is possible to replace it with... Figure 31 , 32 The semiconductor module 1200 shown.

[0180] Furthermore, the semiconductor module possesses multiple semiconductor elements that can be used as... Figure 3 As shown in Figure 4, these are semiconductor devices of the same size and shape. They can also be like... Figures 26-29 The images show different semiconductor components.

[0181] Multiple semiconductor elements may be arranged with the same orientation as adjacent semiconductor elements and substantially parallel to them. Alternatively, multiple semiconductor elements may be arranged with the opposite orientation to adjacent semiconductor elements and substantially point-symmetrical to them. Furthermore, the semiconductor module may also include a bonding conductive member that bonds a first electrode (e.g., a source electrode) of a first semiconductor element to a second electrode (e.g., a drain electrode) of a second semiconductor element arranged adjacent to the first semiconductor element.

[0182] Furthermore, multiple semiconductor elements can also be stacked via bonding conductive components. For example, as in... Figure 8 As briefly explained in the text, the two semiconductor elements that function as the upper and lower arms of each phase of the inverter circuit can also be housed in the semiconductor module in a state where they overlap in the thickness direction of the wiring substrate. For example, if the first to third semiconductor modules contain two semiconductor elements that function as the upper and lower arms of the inverter circuit, they can also be configured as follows: Figures 33-36The semiconductor module 1300 shown. The semiconductor module 1300 includes an upper semiconductor element 1360 and a lower semiconductor element 1370, a resin mold 1330 that integrally seals the upper semiconductor element 1360 and the lower semiconductor element 1370, and external terminals 1301 to 1304, 1311 to 1314. Figures 33-36 The x-axis and y-axis directions shown represent the sides of the semiconductor module 1300, and the xy-plane direction represents the planar direction of the semiconductor module 1300. The z-axis direction is the up-down direction orthogonal to the planar direction.

[0183] like Figure 33 As shown, the semiconductor module 1300 has eight external terminals 1301-1304, 1311-1314 protruding in the y-axis direction from a resin mold 1330 that is generally rectangular in shape when viewed from above. The external terminals 1301-1304 are arranged sequentially from the positive x-axis direction toward the negative x-axis direction on the side of the resin mold 1330, i.e., in the positive y-axis direction (first direction), and extend along the y-axis direction as their long side. The external terminals 1311-1314 are arranged sequentially from the positive x-axis direction toward the negative y-axis direction in the negative y-axis direction, which is a second direction opposite to the first direction and separated from the resin mold 1330, and extend along the y-axis direction as their long side.

[0184] like Figures 33-36 As shown, an upper semiconductor element 1360 and a lower semiconductor element 1370 are integrally sealed within a resin mold 1330 in a stacked state along the z-axis. The upper semiconductor element 1360 and the lower semiconductor element 1370 are semiconductor elements with the same structure, shape, and size, and are roughly rectangular when viewed from above. If the upper semiconductor element 1360 and the lower semiconductor element 1370 are stacked vertically without offset from each other in the planar direction with the same orientation, then angles 1361 and 1371, angles 1362 and 1372, angles 1363 and 1373, and angles 1364 and 1374 are approximately at the same position in the planar direction.

[0185] The upper semiconductor element 1360 and the lower semiconductor element 1370 are having Figure 5 A vertically insulated gate semiconductor device with the structure shown. More specifically, a power MOSFET.

[0186] The upper semiconductor element 1360 and the lower semiconductor element 1370 are respectively oriented with the source electrode 71 facing upwards (positive z-axis direction) and the drain electrode facing downwards (negative z-axis direction), with the upper semiconductor element 1360 positioned upwards and the lower semiconductor element 1370 positioned downwards. Figures 33-36As shown, the upper semiconductor element 1360 is configured such that its long side is the y-axis direction when viewed from above, and the lower semiconductor element 1370 is configured such that its long side is the x-axis direction when viewed from above. That is, when viewed from above, the upper semiconductor element 1360 is positioned relative to the lower semiconductor element 1370 in an orientation approximately 90° counterclockwise with the vertical direction as the axis.

[0187] like Figures 33-36 As shown, the semiconductor module 1300 includes a first conductive component 1321, a second conductive component 1323, an upper semiconductor element 1360, a third conductive component 1324, a fourth conductive component 1325, a lower semiconductor element 1370, and an electrode pad 1322, stacked sequentially from top to bottom. The semiconductor module 1300 also has conductive bonding plates 1305, 1306, 1315, and 1316 at the same vertical position as the electrode pad 1322. Bonding plate 1305 is integrally formed with external terminal 1301. Bonding plate 1306 is integrally formed with external terminals 1302 to 1304. Bonding plate 1315 is integrally formed with external terminal 1311. Bonding plate 1316 is integrally formed with external terminals 1312 to 1314. In addition, external terminals 1301-1304, 1311-1314, bonding plates 1305, 1306, 1315, 1316, and electrode pads 1322 are fabricated on the lead frame. The semiconductor module 1300 also includes conductive gate connection components 1307 and 1317.

[0188] The second conductive component 1323 corresponds to the source electrode formed on the upper surface side of the upper semiconductor element 1360. When viewed from above, the second conductive component 1323 has a shape with one of the four corners of a rectangle cut off, and the gate pad of the upper semiconductor element 1360 is disposed in the cut-off portion. The upper surface of the second conductive component 1323 is bonded to the lower surface of the first conductive component 1321 via solder. The gate pads of the upper semiconductor element 1360 and the lower semiconductor element 1370 are located at positions that are approximately the same when viewed from above. More specifically, the gate pad of the upper semiconductor element 1360 is located near corner 1364, and the gate pad of the lower semiconductor element 1370 is located near corner 1374.

[0189] The first conductive component 1321, when viewed from above, is approximately L-shaped and extends along the positive y-axis to a position above the bonding plate 1306. At the position above the bonding plate 1306, the first conductive component 1321 has a connecting portion 1321a extending downwards to reach the bonding plate 1306. The lower surface of the connecting portion 1321a is bonded to the upper surface of the bonding plate 1306 via solder. Thus, the source electrode of the upper semiconductor element 1360 is electrically connected to the external terminals 1302-1304.

[0190] The lower side of the upper semiconductor element 1360 is the drain electrode side, which is bonded to the upper surface of the third conductive component 1324 via solder. The fourth conductive component 1325 corresponds to the source electrode formed on the upper surface side of the lower semiconductor element 20. The fourth conductive component 1325 is bonded to the third conductive component 1324 via solder.

[0191] The third conductive component 1324, when viewed from above, is approximately L-shaped and extends in the negative y-axis direction to a position above the bonding plate 1316. The third conductive component 1324, at its position above the bonding plate 1316, has a connecting portion 1324a extending downwards to reach the bonding plate 1316. The lower surface of the connecting portion 1324a is bonded to the upper surface of the bonding plate 1316 via solder. Thus, the drain electrode of the upper semiconductor element 1360 and the source electrode of the lower semiconductor element 1370 are electrically connected to the external terminals 1312-1314. The first conductive component 1321 and the third conductive component 1324 are so-called clips, but in addition to clips, wire bonding, wire tape, etc., can also be used.

[0192] The second conductive component 1323 and the fourth conductive component 1325 are the source electrodes of the upper semiconductor element 1360 and the lower semiconductor element 1370, respectively, and have the same shape and size. Similar to the positional relationship between the upper semiconductor element 1360 and the lower semiconductor element 1370, the second conductive component 1323 is configured relative to the fourth conductive component 1325 in an orientation approximately 90 degrees counterclockwise with the vertical direction as the axis. By configuring it in this way, the position of the gate pad of the upper semiconductor element 1360 is at an angle that is both positive x-axis and positive y-axis, while the position of the gate pad of the lower semiconductor element 1370 is at an angle that is both positive x-axis and negative y-axis.

[0193] The lower surface of the semiconductor element 1370 is the drain electrode, which is bonded to the electrode pad 1322 via solder. For example... Figure 33As shown in (b), electrode pad 1322 is exposed on the lower surface of resin mold 1330 and is electrically connected to the drain electrode of the lower semiconductor element 20. The drain electrode of the lower semiconductor element 20 is not electrically connected to any of the external terminals 1301-1304, 1311-1314.

[0194] The first conductive component 1321, the second conductive component 1323, the third conductive component 1324, and the fourth conductive component 1325 are thicker than the electrode pad 1322. Each conductive component is thicker and therefore has more weight, thus suppressing positional shifts in the upper semiconductor element 1360 and the lower semiconductor element 1370 that are mounted in contact with any of the conductive components. In other words, because each conductive component is thicker than the electrode pad 1322, positional shifts within the resin mold 1330 of the semiconductor module 1300 can be suppressed.

[0195] The gate connection member 1307 includes a columnar portion extending vertically from the upper surface of the bonding plate 1305, and a beam-shaped portion extending from the columnar portion in an inclined direction that forms the negative x-axis and y-axis to the upper surface of the upper semiconductor element 1360. The lower surface of the columnar portion is bonded to the upper surface of the bonding plate 1305 via solder. The beam-shaped portion is electrically connected to the gate electrode of the upper semiconductor element 1360 via the gate pad. Thus, the gate electrode of the upper semiconductor element 1360 is electrically connected to the external terminal 1301.

[0196] The gate connection member 1317 includes a columnar portion extending vertically from the upper surface of the bonding plate 1315, and a beam-shaped portion extending from the columnar portion in the positive y-axis direction to the upper surface of the lower semiconductor element 20. The lower surface of the columnar portion is bonded to the upper surface of the bonding plate 1315 via solder. The beam-shaped portion is electrically connected to the gate electrode of the lower semiconductor element 20 via the gate pad. Thus, the gate electrode of the lower semiconductor element 20 is electrically connected to the external terminal 1311. The gate connection members 1307 and 1317 are so-called gate clips, but in addition to clips, wire bonding, wire tape, etc., can also be used.

[0197] External terminal 1301 is a first gate terminal electrically connected to the gate electrode of the upper semiconductor element 1360. External terminal 1311 is a second gate terminal electrically connected to the gate electrode 75 of the lower semiconductor element 1370. External terminals 1302 to 1304 are first source terminals electrically connected to the source electrode of the upper semiconductor element 1360. External terminals 1312 to 1314 are second source terminals electrically connected to the source electrode of the lower semiconductor element 1370, and first drain terminals electrically connected to the drain electrode of the upper semiconductor element 1360.

[0198] According to the above-described embodiments, the following effects can be obtained.

[0199] Electronic devices 100, 200, 300, 400, 500, 600, 610, 700, 800, and 900 are used in electric motors and include: a wiring board (e.g., wiring board 101); electrical connection wiring (e.g., electrical connection wiring 150) disposed approximately at the center of the wiring board and connected to a power source; a plurality of motor connection wiring (e.g., first motor connection wiring 114, second motor connection wiring 115, and third motor connection wiring 116) disposed on the peripheral side of the wiring board compared to the electrical connection wiring and connected to the electric motor; and a plurality of semiconductor modules (e.g., first semiconductor module 120, second semiconductor module 130, and third semiconductor module 140) respectively disposed corresponding to the plurality of motor connection wiring.

[0200] Multiple semiconductor modules include multiple semiconductor elements (e.g., semiconductor elements 123b, 124b) and a resin mold (e.g., resin mold 125) that integrally seals the multiple semiconductor elements. Therefore, the wiring connecting the semiconductor elements disposed on the wiring substrate can be simplified.

[0201] Furthermore, multiple semiconductor modules are disposed on the electrical connection wiring, or disposed at a position that is peripheral to the electrical connection wiring and central to the motor connection wiring. Moreover, electrodes of at least a portion of the multiple semiconductor modules are mounted on the electrical connection wiring. By mounting electrodes of at least a portion of the multiple semiconductor modules on the electrical connection wiring, at least a portion of the semiconductor modules and the electrical connection wiring can be arranged in an overlapping manner, reducing the area of ​​the wiring surrounding the semiconductor modules. Therefore, the area of ​​the wiring from the multiple motor connection wiring to the electrical connection wiring, and the area of ​​the wiring surrounding the semiconductor modules, can be reduced.

[0202] In the aforementioned electronic device, a semiconductor module and an arithmetic unit that controls the operation of an electric motor can be mounted on the same wiring substrate. By arranging a drive circuit composed of a semiconductor module and a control circuit of the arithmetic unit on the same substrate, in addition to the miniaturization effect of the product, noise suppression effect resulting from shortening the wiring of high-frequency signal lines can also be achieved.

[0203] In the aforementioned electronic device, the wiring substrate may also be a stacked substrate having a wiring layer in the inner layer of the substrate. For example, by arranging wiring forming the power path on the substrate surface and arranging wiring forming the power path on the negative side in the inner layer of the substrate, it is not necessary to arrange both the power paths on the positive and negative sides on the same layer of the wiring substrate, thus enabling the substrate to be miniaturized.

[0204] In the aforementioned electronic device, the following configurations may also be provided. For example, as in electronic device 100, it is preferable that the external terminals (e.g., external terminals 121, 122) that are electrically connected to the multiple semiconductor modules protrude from the resin mold in a direction that is substantially parallel to the wiring direction of the multiple motor connection wiring.

[0205] Alternatively, as in electronic devices 100 and 200, it is preferable that the multiple semiconductor modules comprise multiple semiconductor elements arranged substantially parallel or substantially perpendicular to the wiring directions of the wiring connected to the multiple motors. Or, as in electronic device 300, it is preferable that the multiple semiconductor modules comprise multiple semiconductor elements overlapped and mounted in the thickness direction of the wiring substrate.

[0206] In addition, as with electronic devices 200 and 300, the electrical connection wiring preferably extends in a generally straight line, and at least one of a plurality of semiconductor modules is disposed on the electrical connection wiring.

[0207] Electronic devices 100, 200, 300, 400, 500, 600, 610, 700, 800, and 900 can be configured for use in inverter circuits or H-bridge circuits. For example, as with electronic devices 100, 200, 300, 500, 600, 610, 700, 800, and 900, multiple semiconductor modules can be used as upper and lower arms of each phase of the inverter circuit. Alternatively, as with electronic device 400, multiple semiconductor modules can be used as an entire upper or lower arm of each phase of the inverter circuit.

[0208] Multiple semiconductor modules applied to an inverter circuit, such as semiconductor module 1300, can be semiconductor modules containing upper and lower arms of each phase of an inverter circuit. They can also be semiconductor modules containing semiconductor elements as upper arms and semiconductor elements as lower arms that are mounted overlapping in the thickness direction of a wiring substrate.

[0209] Alternatively, as shown in electronic devices 600, 610, 1000, and 1100, it can also be an electronic device that has a three-phase inverter circuit with multiple upper and lower arms serving as each phase, provided on a wiring substrate, and which uses semiconductor modules.

[0210] Alternatively, as shown in the wiring substrate 1250, the wiring substrate may include a wiring portion 1253 for providing the semiconductor module and a resist portion 1252 disposed around the wiring portion 1253. In this case, it is preferable that the thermal conductivity of the resin mold 1220 mounted on the wiring substrate 1250 is higher than that of the resist portion 1252. Heat dissipation of the wiring substrate 1250 and the semiconductor module 1200 can be promoted through the resin mold 1220.

[0211] Alternatively, as shown in semiconductor module 1200, the surface of semiconductor module 1200 facing the wiring substrate 1250 may be covered by resin mold 1220. This is suitable for use when the resin mold is disposed between the wiring substrate 1250 and the housings 1270 and 1271 disposed on the side facing the wiring substrate 1250, as in semiconductor module 1200. Specifically, by configuring the resin mold to contact the housing, heat generated in the semiconductor module or wiring substrate can be dissipated to the housing side via the resin mold. Furthermore, the resin mold may also be configured to contact the housing via a heat dissipation member disposed between it and the housing. In this case, it is preferable that the thermal conductivity of the heat dissipation member is higher than that of the resin mold.

[0212] The aforementioned electronic devices can be appropriately used for installation in the electric power steering system 80, and can contribute to the miniaturization of its drive circuit and the improvement of heat dissipation.

[0213] Alternatively, at least a portion of the four corners of the resin mold, which is generally rectangular when viewed from above, may be provided with corner pins 1206-1209 as non-potential terminals. Furthermore, it is preferable that the semiconductor module has multiple terminals other than the corner pins, serving as terminals for transmitting and receiving drive signals for the semiconductor elements. Even if one of the multiple terminals is disconnected, the presence of other unconnected terminals prevents the inability to transmit or receive drive signals. Moreover, it is preferable that the corner pins are used for purposes other than those related to the main function of the semiconductor module.

[0214] Furthermore, in the embodiments described above, the example shown is a channel-gate MOSFET where an n-channel is formed by the application of a gate voltage, but it is not limited to this. For example, a planar gate type could also be used, or a different type could be used. Figure 5 The p-channel type in the IGBT can be either p-type or n-type, or it can be an insulated-gate bipolar transistor (IGBT) or a reverse-conducting IGBT (RC-IGBT). Furthermore, when the semiconductor element is an IGBT, the emitter electrode is equivalent to the first electrode, and the collector electrode is equivalent to the second electrode. External terminals electrically connected to the emitter electrode are equivalent to the first terminal, and external terminals electrically connected to the collector electrode are equivalent to the second terminal.

[0215] In addition, Figure 6In drive circuits such as those for IGBTs, voltage-controlled semiconductor switching elements such as IGBTs can be used instead of MOSFETs as individual switches. When using IGBTs without return-current diodes as individual switches, it is preferable to provide return-current diodes for each switch. Specifically, for example, return-current diodes can be connected in anti-parallel to each switch, or a reverse-conducting IGBT (RC-IGBT) with return-current diodes fabricated on the same semiconductor substrate as the IGBT can be used as each switch.

[0216] While this disclosure has been described with reference to embodiments, it should be understood that this disclosure is not limited to those embodiments or structures. This disclosure also includes various modifications and variations within the same scope. Furthermore, various combinations, methods, and other combinations or methods that contain only one element, or more than one element, are also within the scope and spirit of this disclosure.

Claims

1. An electronic device applied to an electric motor, wherein, have: Wiring substrate; Electrical connection wiring is disposed in the center of the aforementioned wiring substrate and connected to the power supply; Multiple motor connection wirings are arranged on the peripheral side of the wiring substrate compared to the electrical connection wirings, and are connected to the electric motors. as well as Multiple semiconductor modules, comprising multiple semiconductor elements, and a resin mold integrally sealing the multiple semiconductor elements. The aforementioned semiconductor modules are configured on the aforementioned electrical connection wiring, or configured at a position that is peripheral to the aforementioned electrical connection wiring and central to the aforementioned motor connection wiring. Electrodes of at least a portion of the aforementioned plurality of semiconductor modules are mounted on the aforementioned electrical connection wiring. The aforementioned wiring substrate includes a wiring portion for providing the aforementioned semiconductor module, and a resist portion disposed around the aforementioned wiring portion. The thermal conductivity of the resin mold is higher than that of the corrosion-resistant part. A housing is also provided on the side opposite the aforementioned wiring substrate, separated from the aforementioned semiconductor module. The heat generated in the semiconductor module or the wiring substrate is dissipated to the housing via the resin mold.

2. The electronic device according to claim 1, wherein, In the aforementioned wiring substrate, the aforementioned semiconductor module and the computing unit that controls the operation of the aforementioned electric motor are mounted on the same substrate.

3. The electronic device according to claim 1, wherein, The aforementioned wiring substrate is a stacked substrate with a wiring layer in the inner layer of the substrate.

4. The electronic device according to claim 1, wherein, The aforementioned semiconductor modules are configured such that external terminals electrically connected to the aforementioned semiconductor elements protrude from the aforementioned resin mold and are parallel to the wiring direction of the aforementioned motor connection wiring.

5. The electronic device according to claim 1, wherein, The aforementioned semiconductor modules include the aforementioned semiconductor elements arranged parallel or perpendicular to the wiring direction of the aforementioned motor connection wiring.

6. The electronic device according to claim 1, wherein, The aforementioned semiconductor modules comprise the aforementioned semiconductor elements mounted overlapping each other in the thickness direction of the wiring substrate.

7. The electronic device according to claim 1, wherein, The aforementioned electrical connection wiring extends in a straight line, and at least one of the aforementioned plurality of semiconductor modules is disposed on the aforementioned electrical connection wiring.

8. The electronic device according to claim 1, wherein, It is used in inverter circuits or H-bridge circuits.

9. The electronic device according to claim 1, wherein, The semiconductor module, when viewed from above, is rectangular. At least a portion of the four corners of the resin mold has corner pins that serve as non-potential terminals.

10. The electronic device according to claim 9, wherein, The semiconductor module described above has multiple terminals other than the aforementioned corner pins, which serve as terminals for transmitting and receiving drive signals for the aforementioned semiconductor element.

11. The electronic device according to claim 9, wherein, The aforementioned corner pins are used for purposes other than terminals related to the main functions of the semiconductor module.

12. The electronic device according to claim 1, wherein, The aforementioned semiconductor modules are used as the upper and lower arms of each phase of the inverter circuit.

13. The electronic device according to claim 1, wherein, The aforementioned semiconductor modules are used as the upper or lower arm of each phase of the inverter circuit.

14. The electronic device according to claim 12, wherein, The aforementioned plurality of semiconductor modules are applied to the inverter circuit as upper and lower arms of each phase of the inverter circuit. The plurality of semiconductor modules include semiconductor elements as upper arms and semiconductor elements as lower arms, wherein the semiconductor elements as upper arms and semiconductor elements as lower arms are mounted overlappingly in the thickness direction of the wiring substrate.

15. The electronic device according to claim 14, wherein, The aforementioned wiring substrate has multiple upper and lower arms for each phase, and the aforementioned semiconductor modules are applied to a three-phase inverter circuit.

16. The electronic device according to claim 1, wherein, The surface of the semiconductor module opposite to the wiring substrate is covered by the resin mold.

17. The electronic device according to claim 1, wherein, The resin mold contacts the housing via a heat dissipation component disposed between the resin mold and the housing. The thermal conductivity of the aforementioned heat dissipation component is greater than that of the aforementioned resin mold.

18. The electronic device according to any one of claims 1 to 17, wherein, Installed in electric power steering systems.

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