Organic device, mask set, mask, and method for manufacturing an organic device

Abstract

The present application provides an organic device, a mask set, a mask, and a method for manufacturing an organic device. The organic device can include a substrate, a first electrode on the substrate, an organic layer on the first electrode, and a second electrode on the organic layer. In a case where the substrate is observed in a direction of a normal line of the substrate, the organic device can include a first display region including the second electrode having a first occupancy ratio, and a second display region including the second electrode having a second occupancy ratio smaller than the first occupancy ratio. The second display region can include the second electrode, and a transmissive region surrounded by the second electrode in a plan view. The transmissive region can include a first transmissive region, and a second transmissive region adjacent to the first transmissive region across the second electrode. It can be that the first transmissive region has a first shape, and the second transmissive region has a second shape different from the first shape.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to an organic device, a mask set, a mask, and a method for manufacturing an organic device. BACKGROUND

[0002] In recent years, in electronic devices such as smartphones or tablet computers, the market is demanding high-fineness display devices. A display device, for example, has a pixel density of 400 ppi or more, or 800 ppi or more, or the like.

[0003] An organic EL display device is attracting attention because it has good responsiveness and / or low power consumption. As a method of forming a pixel of an organic EL display device, a method of causing a material constituting a pixel to adhere to a substrate by evaporation is known. For example, first, a substrate on which an anode is formed in a pattern corresponding to an element is prepared. Next, an organic material is caused to adhere to the anode via a through-hole of a mask, thereby forming an organic layer on the anode. Next, a conductive material is caused to adhere to the organic layer via a through-hole of the mask, thereby forming a cathode on the organic layer.

[0004] Patent Document 1: Japanese Patent No. 3539597

[0005] The larger the area of the cathode, the lower the resistance of the cathode. On the other hand, the larger the area of the cathode, the lower the transmittance of light in the organic device. SUMMARY

[0006] An organic device of one embodiment of the present disclosure can include a substrate, a first electrode over the substrate, an organic layer over the first electrode, and a second electrode over the organic layer. The organic device can include a first display region including the second electrode having a first area ratio, and a second display region including the second electrode having a second area ratio smaller than the first area ratio, when viewed in a direction perpendicular to the substrate. The second display region can include the second electrode, and a transmissive region surrounded by the second electrode in a plan view. The transmissive region can include a first transmissive region, and a second transmissive region adjacent to the first transmissive region with the second electrode therebetween. The first transmissive region can have a first shape, and the second transmissive region can have a second shape different from the first shape.

[0007] According to one embodiment of the present disclosure, the transmittance of light in an organic device can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0008] Figure 1 FIG. 1 is a top view of an example of an organic device of one embodiment of the present disclosure.

[0009] Figure 2is a plan view showing a second display region of the organic device.

[0010] Figure 3 is a plan view showing an example of the second electrode of the second display region.

[0011] Figure 4 is a plan view showing an example of a classification method of the transmissive region of the second display region.

[0012] Figure 5 is a plan view showing an example of the pixel group.

[0013] Figure 6 is a plan view showing an example of the branch electrode of the second electrode.

[0014] Figure 7 is a plan view showing a region surrounded by the double-dotted line labeled with reference numeral VII in the organic device of Figure 3 .

[0015] Figure 8 is a plan view showing a state in which the second electrode is removed from the organic device of Figure 7 .

[0016] Figure 9 is a sectional view of the organic device of Figure 7 along the line A-A.

[0017] Figure 10 is a sectional view of the organic device of Figure 7 along the line B-B.

[0018] Figure 11 is a view showing an example of an evaporation apparatus provided with a mask apparatus.

[0019] Figure 12 is a plan view showing an example of the mask apparatus.

[0020] Figure 13 is a plan view showing a mask of the mask apparatus.

[0021] Figure 14 is a view showing the first mask apparatus and the second mask apparatus.

[0022] Figure 15 is a view showing an example of a cross-sectional structure of the mask.

[0023] Figure 16 is a plan view showing an example of the first mask.

[0024] Figure 17 is a plan view showing an example of the second mask.

[0025] Figure 18 is a plan view showing an example of the mask stack.

[0026] Figure 19 is a plan view showing an example of a classification method of an overlapping region of a mask laminate.

[0027] Figure 20 is a plan view showing an example of a sub region of an overlapping region.

[0028] Figure 21 is a plan view showing an example of a 2nd display region of a reference method.

[0029] Figure 22 is a plan view showing an example of a 2nd display region.

[0030] Figure 23 is a plan view showing an example of a mask laminate.

[0031] Figure 24 is a plan view showing an example of a 1st mask.

[0032] Figure 25 is a plan view showing an example of a 2nd mask.

[0033] Figure 26 is a plan view showing an example of a 3rd mask.

[0034] Figure 27 is a plan view showing an example of a 2nd display region.

[0035] Figure 28 is a plan view showing an example of a mask laminate.

[0036] Figure 29 is a plan view showing an example of a 1st mask.

[0037] Figure 30 is a plan view showing an example of a 2nd mask.

[0038] Figure 31 is a plan view showing a 2nd electrode of Example 1.

[0039] Figure 32 is a graph showing an evaluation method of a diffraction characteristic of a 2nd electrode.

[0040] Figure 33 is a graph showing an evaluation result of a 2nd electrode of Example 1.

[0041] Figure 34 is a graph showing an evaluation result of a 2nd electrode of Example 1.

[0042] Figure 35 is a plan view showing a 2nd electrode of Example 2.

[0043] Figure 36is a graph showing evaluation results of the second electrode of Example 2.

[0044] Figure 37 is a graph showing evaluation results of the second electrode of Example 2.

[0045] Figure 38 is a plan view showing an example of an organic device.

[0046] Figure 39 is a plan view showing an example of a second display region.

[0047] Figure 40 is a plan view showing an example of a mask for forming an inhibitory layer.

[0048] Figure 41 is a sectional view showing an example of a process of forming an inhibitory layer.

[0049] Figure 42 is a plan view showing an example of a mask for forming a second electrode.

[0050] Figure 43 is a sectional view showing an example of a process of forming a second electrode.

[0051] Figure 44 is a sectional view showing an example of a process of forming a second electrode.

[0052] Figure 45 is a sectional view showing an example of a process of removing a second electrode.

[0053] Figure 46 is a plan view showing a second electrode of Example 3.

[0054] Figure 47 is a plan view showing a second electrode of Example 4.

[0055] Figure 48 is a plan view showing a second electrode of Example 5.

[0056] Figure 49 is a plan view showing a second electrode of Example 6. DETAILED DESCRIPTION

[0057] In the present specification and the accompanying drawings, unless specifically stated otherwise, the terms "substrate", "base material", "board", "sheet", and "film" and the like, which indicate a substance that becomes the basis of a certain structure, are not distinguished from each other only according to the difference in the name.

[0058] In the present specification and the accompanying drawings, unless specifically stated otherwise, the terms such as "parallel", "perpendicular", or the like with respect to the designation of the shape and the geometric conditions and their degrees, or the values of the length, the angle, and the like are not limited to the strict meanings, but are to be interpreted within a range in which the same function can be expected.

[0059] In the present specification and the accompanying drawings, unless specifically stated otherwise, in the case where a certain structure of a certain member or a certain region or the like is "on" or "under", "upper side" or "lower side", or "above" or "below" a certain structure of another member or another region or the like, the case where the certain structure is in direct contact with the certain structure is included. Also, the case where another structure is included between the certain structure and the certain structure, that is, the case where the contact is indirect is also included. In addition, unless specifically stated otherwise, the terms such as "on", "upper side", or "above", or "under", "lower side", or "below" can also be reversed.

[0060] In the present specification and the accompanying drawings, unless specifically stated otherwise, there are cases where the same reference numerals or similar reference numerals are assigned to the same portions or portions having the same function, and the repeated description thereof is omitted. In addition, there are cases where the size proportions of the drawings are different from the actual proportions for the convenience of explanation, or a part of the structure is omitted from the drawings.

[0061] In the present specification and the accompanying drawings, unless specifically stated otherwise, the embodiments of the present disclosure can also be combined with other embodiments or modified examples within a range where no contradiction occurs. In addition, the other embodiments can be combined with each other, or the other embodiments and the modified examples can be combined within a range where no contradiction occurs. In addition, the modified examples can also be combined with each other within a range where no contradiction occurs.

[0062] In the present specification and the accompanying drawings, unless specifically stated otherwise, in the case where a plurality of steps are disclosed with respect to a manufacturing method or the like, other steps that are not disclosed can be implemented between the disclosed steps. In addition, the order of the disclosed steps is arbitrary within a range where no contradiction occurs.

[0063] In the present specification and the accompanying drawings, unless specifically stated otherwise, the range expressed by a symbol such as "~" includes the values or elements placed before and after the symbol "~". For example, the value range defined by the expression "34 mass% to 38 mass%" is the same as the value range defined by the expression "34 mass% or more and 38 mass% or less". For example, the range defined by the expression "masks 50A to 50B" includes the mask 50A and the mask 50B.

[0064] In one embodiment of the present specification, a mask set having a plurality of masks is described as being used for forming an electrode on a substrate at the time of manufacturing an organic EL display device. However, the use of the mask set is not particularly limited, and the present embodiment can be applied to a mask set for various uses. For example, the mask set of the present embodiment can also be used in order to form an electrode of a device for displaying or projecting an image or a video for expressing virtual reality (so-called VR) or augmented reality (so-called AR). In addition, the mask set of the present embodiment can also be used in order to form an electrode of a liquid crystal display device or an electrode of a display device other than an organic EL display device. In addition, the mask set of the present embodiment can also be used in order to form an electrode of a pressure sensor or an electrode of an organic device other than a display device.

[0065] The first aspect of the present disclosure is an organic device including:

[0066] a substrate;

[0067] a first electrode over the substrate;

[0068] an organic layer over the first electrode; and

[0069] a second electrode over the organic layer,

[0070] the organic device includes: a first display region including the second electrode having a first area ratio; and a second display region including the second electrode having a second area ratio smaller than the first area ratio,

[0071] the second display region includes: the second electrode; and a transmissive region surrounded by the second electrode in plan view,

[0072] the transmissive region includes: a first transmissive region having a first shape; and a second transmissive region adjacent to the first transmissive region with the second electrode interposed therebetween,

[0073] the second transmissive region has a second shape different from the first shape.

[0074] The second aspect of the present disclosure can be that, in the organic device of the above-described first aspect, an area of the first transmissive region is different from an area of the second transmissive region.

[0075] The 3rd aspect of the present disclosure can be that, in any of the organic devices of the 1st aspect or the 2nd aspect described above, the transmission region includes a 3rd transmission region adjacent to the 1st transmission region and the 2nd transmission region across the 2nd electrode. The 3rd transmission region can have a 3rd shape different from the 1st shape and the 2nd shape.

[0076] The 4th aspect of the present disclosure can be that, in any of the organic devices of the 1st aspect to the 3rd aspect described above, the transmission region includes a 4th transmission region adjacent to the 1st transmission region and the 2nd transmission region across the 2nd electrode. The 4th transmission region can have a 4th shape different from the 1st shape and the 2nd shape.

[0077] The 5th aspect of the present disclosure can be that, in any of the organic devices of the 1st aspect to the 4th aspect described above, 80% or more of the transmission region corresponds to the 1st transmission region.

[0078] The 6th aspect of the present disclosure can be that, in any of the organic devices of the 1st aspect to the 5th aspect described above, the 2nd display region has a 1st breakage rate of 80% or more. It can be that the 1st breakage rate is a percentage of a total of a number of 1st breakage groups with respect to a number of pixel groups including 4 of the organic layers, the 1st breakage groups being groups of broken pixels, a path connecting 4 of the organic layers of the broken pixel groups partially including the transmission region.

[0079] The 7th aspect of the present disclosure can be that, in any of the organic devices of the 1st aspect to the 6th aspect described above, in the 2nd display region, the 2nd electrode includes a dry electrode and a branch electrode connected to the dry electrode. The branch electrode can include: 2 1st electrode terminals in a 1st electrode direction; and 1 2nd electrode terminal in a 2nd electrode direction intersecting the 1st electrode direction. The 2 1st electrode terminals and the 1 2nd electrode terminal can be connected to the transmission region.

[0080] The 8th aspect of the present disclosure can be that, in the organic device of the 7th aspect described above, the 2nd electrode can include a 1st layer and a 2nd layer. The 1st display region can include electrode overlap regions arranged in a 23rd period along a 2nd direction of the element. It can be that the electrode overlap regions include the 1st layer and the 2nd layer when viewed in plan. The 1st electrode terminal can have a width of 0.4 times or more of the 23rd period.

[0081] The 9th aspect of the present disclosure can be any of the above-mentioned 7th aspect or the above-mentioned 8th aspect, wherein the second electrode can include a first layer and a second layer. The first display region can include electrode overlapping regions arranged in a 13th period in the element first direction. The electrode overlapping regions can include the first layer and the second layer in plan view. The width of the second electrode end can be 0.4 times or more of the 13th period.

[0082] The 10th aspect of the present disclosure is a mask set including two or more masks including a mask region and a through-hole,

[0083] The mask stack in which the two or more masks overlap includes a through region overlapping the through-hole in a normal direction of the mask, and in the normal direction of the mask, the mask stack includes a mask first region including the through region having a first opening ratio, and a mask second region including the through region having a second opening ratio smaller than the first opening ratio,

[0084] The mask second region includes the through region, and an overlapping region surrounded by the through region in plan view,

[0085] The overlapping region includes the mask region of the two or more masks in plan view,

[0086] The overlapping region includes a first overlapping region having a first mask shape, and a second overlapping region adjacent to the first overlapping region across the through region,

[0087] The second overlapping region has a second mask shape different from the first mask shape.

[0088] The 11th aspect of the present disclosure can be the mask set of the above-mentioned 10th aspect, wherein the area of the first overlapping region can be different from the area of the second overlapping region.

[0089] The 12th aspect of the present disclosure can be the mask set of any of the above-mentioned 10th aspect or the above-mentioned 11th aspect, wherein the overlapping region includes a third overlapping region adjacent to the first overlapping region and the second overlapping region across the through region. The third overlapping region can have a third mask shape different from the first mask shape and the second mask shape.

[0090] The 13th aspect of the present disclosure can be that, in the mask set of each of the above-mentioned 10th aspect to the above-mentioned 12th aspect, the overlapping region includes a fourth overlapping region that is adjacent to the first overlapping region and the second overlapping region across the through region. The fourth overlapping region can have a fourth mask shape that is different from the first mask shape and the second mask shape.

[0091] The 14th aspect of the present disclosure can be that, in the mask set of each of the above-mentioned 10th aspect to the above-mentioned 13th aspect, 80% or more of the overlapping region corresponds to the first overlapping region.

[0092] The 15th aspect of the present disclosure can be that, in the mask set of each of the above-mentioned 10th aspect to the above-mentioned 14th aspect, in the mask second region, the through region includes a dry region and a branch region connected to the dry region. It can be that the branch region includes two first region ends in a hole first direction and one second region end in a hole second direction that intersects the hole first direction. It can be that the two first region ends and the one second region end are connected to the overlapping region.

[0093] The 16th aspect of the present disclosure can be that, in the mask set of the above-mentioned 15th aspect, the mask first region includes a hole overlapping region arranged in a 27th period along a mask second direction. It can be that the hole overlapping region includes two or more of the through holes of the mask in a plan view. It can be that the width of the first region end is 0.4 times or more of the 27th period.

[0094] The 17th aspect of the present disclosure can be that, in the mask set of any of the above-mentioned 15th aspect or the above-mentioned 16th aspect, the mask first region includes a hole overlapping region arranged in a 17th period along a mask first direction. It can be that the hole overlapping region includes two or more of the through holes of the mask in a plan view. It can be that the width of the second region end is 0.4 times or more of the 17th period.

[0095] The 18th aspect of the present disclosure is a mask having a mask third direction and a mask fourth direction that intersects the mask third direction, in which,

[0096] The mask includes a shielding region and a through hole,

[0097] In a case where the mask is observed along a normal direction of the mask, the mask includes a mask third region including the through hole having a third opening ratio, and a mask fourth region including the through hole having a fourth opening ratio that is smaller than the third opening ratio,

[0098] In the mask third region, the through holes are arranged in the mask third direction at a third 35 periodicity,

[0099] In the mask fourth region, an average value of distances between center points of two of the through holes arranged in the mask third direction is 1.1 times or more of the third 35 periodicity.

[0100] The 19th aspect of the present disclosure can be that, in the mask of the above-mentioned 18th aspect, in the mask fourth region, a standard deviation of distances between center points of two of the through holes arranged in the mask third direction is 0.2 times or more of the third 35 periodicity.

[0101] The 20th aspect of the present disclosure is a method for manufacturing an organic device, the method for manufacturing an organic device including a second electrode forming step of forming a second electrode on an organic layer on a first electrode on a substrate using a mask set described above,

[0102] The second electrode forming step includes:

[0103] a step of forming a first layer of the second electrode by an evaporation method using a first one of the masks; and

[0104] a step of forming a second layer of the second electrode by an evaporation method using a second one of the masks.

[0105] One embodiment of the present disclosure is described in detail with reference to the drawings. Furthermore, the embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not interpreted as being limited to only these embodiments.

[0106] First, the organic device 100 is described. The organic device 100 includes an electrode formed by using a mask set of the present embodiment. Figure 1 is a plan view showing an example of the organic device 100 when viewed in a normal direction of a substrate of the organic device 100. In the following description, a case of viewing in a normal direction of a surface of a substance serving as a basis such as a substrate is also referred to as plan view.

[0107] The organic device 100 includes a substrate and a plurality of elements 115 arranged in an in-plane direction of the substrate. The element 115 is, for example, a pixel. As shown in Figure 1 In a plan view, the organic device 100 can include a first display region 101 and a second display region 102. The second display region 102 can have a smaller area than the first display region 101. As shown in Figure 1 The second display region 102 can be surrounded by the first display region 101. Although not shown, a part of an outer edge of the second display region 102 can be on the same line as a part of an outer edge of the first display region 101.

[0108] Figure 2 It is Figure 1 A magnified top view of the second display area 102 and its surroundings. In the first display area 101, the elements 115 can also be arranged along two different directions. Figure 1 and Figure 2 In the example shown, two or more elements 115 in the first display area 101 can also be arranged along the first element direction G1. The two or more elements 115 in the first display area 101 can also be arranged along the second element direction G2, which intersects the first element direction G1. The second element direction G2 can also be perpendicular to the first element direction G1.

[0109] The organic device 100 includes a second electrode 140. The second electrode 140 is located on the organic layer 130, which will be described later. The second electrode 140 can be electrically connected to two or more organic layers 130. For example, the second electrode 140 can overlap with two or more organic layers 130 when viewed from above. The second electrode 140 located in the first display area 101 is also referred to as the second electrode 140X. The second electrode 140 located in the second display area 102 is also referred to as the second electrode 140Y.

[0110] The second electrode 140X has a first occupancy rate. The first occupancy rate is calculated by dividing the total area of ​​the second electrodes 140 located in the first display area 101 by the area of ​​the first display area 101. The second electrode 140Y has a second occupancy rate. The second occupancy rate is calculated by dividing the total area of ​​the second electrodes 140 located in the second display area 102 by the area of ​​the second display area 102. The second occupancy rate can be less than the first occupancy rate. For example, as... Figure 2 As shown, the second display area 102 may include a non-transmissive area 103 and a transmissive area 104. The transmissive area 104 does not overlap with the second electrode 140Y when viewed from above. The transmissive area 104 may be surrounded by the second electrode 140Y when viewed from above. The non-transmissive area 103 overlaps with the second electrode 140Y when viewed from above.

[0111] The ratio of the second area occupancy to the first area occupancy can be 0.2 or more, 0.3 or more, or 0.4 or more, for example. The ratio of the second area occupancy to the first area occupancy can be 0.6 or less, 0.7 or less, or 0.8 or less, for example. The range of the ratio of the second area occupancy to the first area occupancy can be defined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the second area occupancy to the first area occupancy can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the second area occupancy to the first area occupancy can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the second area occupancy to the first area occupancy can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the second area occupancy to the first area occupancy can be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0112] The transmittance of the non-transmissive region 103 is also referred to as a first transmittance. The transmittance of the transmissive region 104 is also referred to as a second transmittance. Since the transmissive region 104 does not include the second electrode 140Y, the second transmittance is higher than the first transmittance. Therefore, in the second display region 102 including the transmissive region 104, light reaching the organic device 100 can reach an optical member or the like on the back surface side of the substrate through the transmissive region 104. The optical member is, for example, a member that enables a certain function by detecting light, such as a camera. Since the second display region 102 includes the non-transmissive region 103, an image can be displayed in the second display region 102 in the case where the element 115 is a pixel. In this way, the second display region 102 can detect light and display an image. The function of the second display region 102 enabled by detecting light is, for example, a sensor such as a camera, a fingerprint sensor, a face authentication sensor, or the like. The higher the second transmittance of the transmissive region 104 of the second display region 102 and the lower the second area occupancy, the more the amount of light received by the sensor can be increased.

[0113] In a case where any of the size of the non-transmission region 103 in the element first direction G1 and the element second direction G2 and the size of the transmission region 104 in the element first direction G1 and the element second direction G2 is 1 mm or less, the first transmittance and the second transmittance are measured using a microspectrophotometer. As the microspectrophotometer, any of OSP-SP200 manufactured by Olympus Corporation or LCF series manufactured by DKK TOA Corporation can be used. Any of the microspectrophotometers can measure the transmittance in a visible light region of 380 nm or more and 780 nm or less. Any of quartz or borosilicate glass for TFT liquid crystal, alkali-free glass for TFT liquid crystal is used as a reference. The measurement result at 550 nm is used as the first transmittance and the second transmittance.

[0114] In a case where both the size of the non-transmission region 103 in the element first direction G1 and the element second direction G2 and the size of the transmission region 104 in the element first direction G1 and the element second direction G2 are more than 1 mm, the first transmittance and the second transmittance are measured using a spectrophotometer. As the spectrophotometer, any of ultraviolet-visible spectrophotometers UV-2600i or UV-3600i Plus manufactured by Shimadzu Corporation can be used. By mounting a micro-beam diaphragm unit on the spectrophotometer, it is possible to measure the transmittance of a region having a size of at most 1 mm. Air is used as a reference. The measurement result at 550 nm is used as the first transmittance and the second transmittance.

[0115] The ratio of the second transmittance TR2 to the first transmittance TR1, TR2 / TR1, can be, for example, 1.2 or more, 1.5 or more, or 1.8 or more. TR2 / TR1 can, for example, be 2 or less, 3 or less, or 4 or less. The range of TR2 / TR1 can be defined by a first group consisting of 1.2, 1.5, and 1.8 and / or a second group consisting of 2, 3, and 4. The range of TR2 / TR1 can be defined by a combination of any one value from the first group and any one value from the second group. The range of TR2 / TR1 can be defined by a combination of any two values ​​from the first group. The range of TR2 / TR1 can be defined by a combination of any two values ​​from the second group. For example, TR2 / TR1 can be 1.2 or higher and 4 or lower, 1.2 or higher and 3 or lower, 1.2 or higher and 2 or lower, 1.2 or higher and 1.8 or lower, 1.2 or higher and 1.5 or lower, 1.5 or higher and 4 or lower, 1.5 or higher and 3 or lower, 1.5 or higher and 2 or lower, 1.5 or higher and 1.8 or lower, 1.8 or higher and 4 or lower, 1.8 or higher and 3 or lower, 1.8 or higher and 2 or lower, 2 or higher and 4 or lower, 2 or higher and 3 or lower, 3 or higher and 4 or lower.

[0116] like Figure 2 As shown, the second electrode 140 may include an electrode connection terminal. The electrode connection terminal connects the second electrode 140Y and the second electrode 140X. The electrode connection terminal corresponds to the boundary between the second electrode 140X and the second electrode 140Y. The electrode connection terminal may include a first electrode connection terminal 140Z1, a second electrode connection terminal 140Z2, a third electrode connection terminal 140Z3, and a fourth electrode connection terminal 140Z4. The first electrode connection terminal 140Z1 is located on one side of the boundary in the first direction G1 of the element. The second electrode connection terminal 140Z2 is located on the other side of the boundary in the first direction G1 of the element. The third electrode connection terminal 140Z3 is located on one side of the boundary in the second direction G2 of the element. The fourth electrode connection terminal 140Z4 is located on the other side of the boundary in the second direction G2 of the element.

[0117] exist Figure 2In the illustrated example, the boundary line that defines the "boundary on one side in the element first direction G1" extends in the element second direction G2. Thus, the angle that the boundary line that defines the "boundary on one side in the element first direction G1" makes with the element first direction G1 is 90°. Although not illustrated, the boundary line that defines the "boundary on one side in the element first direction G1" can not be a straight line. For example, in the case where the outline of the second display region 102 is circular, the boundary line that defines the "boundary on one side in the element first direction G1" is a circular arc. In this case, the angle that the boundary line that defines the "boundary on one side in the element first direction G1" makes with the element first direction G1 exceeds 45° and is 90° or less. In other words, a boundary line that makes an angle exceeding 45° and 90° or less with respect to the element first direction G1 and that is located on one side in the element first direction G1 can be determined as the "boundary on one side in the element first direction G1". Similarly, a boundary line that makes an angle exceeding 45° and 90° or less with respect to the element first direction G1 and that is located on the other side in the element first direction G1 can be determined as the "boundary on the other side in the element first direction G1". A boundary line that makes an angle exceeding 45° and 90° or less with respect to the element second direction G2 and that is located on one side in the element second direction G2 can be determined as the "boundary on one side in the element second direction G2". A boundary line that makes an angle exceeding 45° and 90° or less with respect to the element second direction G2 and that is located on the other side in the element second direction G2 can be determined as the "boundary on the other side in the element second direction G2".

[0118] As Figure 2 illustrated, the second electrode 140Y of the second display region 102 can include a region that is continuous from one electrode connection end to another electrode connection end. For example, the second electrode 140Y can include the following regions. The regions can be repeated with each other. The second electrode 140Y can include all of the following types of regions. The second electrode 140Y can also include a part of the following types of regions.

[0119] • a region that is continuous from the first electrode connection end 140Z1 to the second electrode connection end 140Z2

[0120] • a region that is continuous from the first electrode connection end 140Z1 to the third electrode connection end 140Z3

[0121] • a region that is continuous from the first electrode connection end 140Z1 to the fourth electrode connection end 140Z4

[0122] • a region that is continuous from the second electrode connection end 140Z2 to the third electrode connection end 140Z3

[0123] • a region that is continuous from the second electrode connection end 140Z2 to the fourth electrode connection end 140Z4

[0124] • A region from the 3rd electrode connection terminal 140Z3 to the 4th electrode connection terminal 140Z4

[0125] Figure 3 is a plan view that enlarges the 2nd electrode 140X of the 1st display region 101 and the 2nd electrode 140Y of the 2nd display region 102. The 2nd electrode 140X and the 2nd electrode 140Y can both overlap the organic layer 130 when viewed from above. The organic layer 130 is one constituent element of the element 115.

[0126] In the 1st display region 101, the organic layer 130 can be arranged in the 11th period P11 along the element 1st direction G1. In the 2nd display region 102, the organic layer 130 can be arranged in the 12th period P12 along the element 1st direction G1. The 12th period P12 can be larger than the 11th period P11. As described later, the 12th period P12 can also be the same as the 11th period P11.

[0127] The ratio of the 12th period P12 to the 11th period P11 can be, for example, 1.0 or more, 1.1 or more, 1.3 or more, or 1.5 or more. The ratio of the 12th period P12 to the 11th period P11 can be, for example, 2.0 or less, 3.0 or less, or 4.0 or less. The range of the ratio of the 12th period P12 to the 11th period P11 can be defined by a first group consisting of 1.0, 1.1, 1.3, and 1.5 and / or a second group consisting of 2.0, 3.0, and 4.0. The range of the ratio of the 12th period P12 to the 11th period P11 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the 12th period P12 to the 11th period P11 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the 12th period P12 to the 11th period P11 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the 12th period P12 to the 11th period P11 can be 1.0 or more and 4.0 or less, 1.0 or more and 3.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.0 or more and 1.3 or less, 1.0 or more and 1.1 or less, 1.1 or more and 4.0 or less, 1.1 or more and 3.0 or less, 1.1 or more and 2.0 or less, 1.1 or more and 1.5 or less, 1.1 or more and 1.3 or less, 1.3 or more and 4.0 or less, 1.3 or more and 3.0 or less, 1.3 or more and 2.0 or less, 1.3 or more and 1.5 or less, 1.5 or more and 4.0 or less, 1.5 or more and 3.0 or less, 1.5 or more and 2.0 or less, 2.0 or more and 4.0 or less, 2.0 or more and 3.0 or less, 3.0 or more and 4.0 or less. In a case where the ratio of the 12th period P12 to the 11th period P11 is small, the difference between the pixel density of the second display region 102 and the pixel density of the first display region 101 becomes small. Thus, it is possible to suppress the generation of a visual difference between the first display region 101 and the second display region 102.

[0128] In the first display region 101, the organic layer 130 can be arranged in a 21st period P21 along the element second direction G2. In the second display region 102, the organic layer 130 can be arranged in a 22nd period P22 along the element second direction G2. The 22nd period P22 can be larger than the 21st period P21. As described later, the 22nd period P22 can also be the same as the 21st period P21.

[0129] The ratio of period 22 P22 to period 21 P21 can be, for example, 1.0 or higher, 1.1 or higher, 1.3 or higher, or 1.5 or higher. The ratio of period 22 P22 to period 21 P21 can be, for example, 2.0 or lower, 3.0 or lower, or 4.0 or lower. The range of the ratio of period 22 P22 to period 21 P21 can be defined by a first group consisting of 1.0, 1.1, 1.3, and 1.5 and / or a second group consisting of 2.0, 3.0, and 4.0. The range of the ratio of period 22 P22 to period 21 P21 can be defined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of period 22 P22 to period 21 P21 can be defined by a combination of any two values ​​from the first group. The range of the ratio of period 22 P22 to period 21 P21 can be defined by any combination of two values ​​included in the second group above. For example, the ratio of period 22 P22 to period 21 P21 can be greater than or equal to 1.0 and less than 4.0, greater than or equal to 1.0 and less than 3.0, greater than or equal to 1.0 and less than 2.0, greater than or equal to 1.0 and less than 1.5, greater than or equal to 1.0 and less than 1.3, greater than or equal to 1.0 and less than 1.1, greater than or equal to 1.1 and less than 4.0, greater than or equal to 1.1 and less than 3.0, greater than or equal to 1.1 and less than 2.0, or greater than or equal to 1.1 and less than 1.5. The values ​​can be 1.1 or higher and 1.3 or lower, 1.3 or higher and 4.0 or lower, 1.3 or higher and 3.0 or lower, 1.3 or higher and 2.0 or lower, 1.3 or higher and 1.5 or lower, 1.5 or higher and 4.0 or lower, 1.5 or higher and 3.0 or lower, 1.5 or higher and 2.0 or lower, 2.0 or higher and 4.0 or lower, 2.0 or higher and 3.0 or lower, or 3.0 or higher and 4.0 or lower. When the ratio of the 22nd period P22 to the 21st period P21 is small, the difference between the pixel density of the second display area 102 and the pixel density of the first display area 101 becomes smaller. Therefore, visual differences between the first display area 101 and the second display area 102 can be suppressed.

[0130] like Figure 3 As shown, the second electrode 140Y can be irregularly arranged. Therefore, the transmission region 104 surrounded by the second electrode 140Y can have an irregular shape. This suppresses the mutual reinforcement of diffracted light when passing through the transmission region 104. Therefore, it is possible to suppress the incidence of highly intensified diffracted light on the sensor. Thus, for example, it is possible to suppress image blurring generated by the sensor.

[0131] An example of an irregular shape will be described. As shown in Figure 3 The transmission region 104 can include a first transmission region 1041 and a second transmission region 1042. The second transmission region 1042 is adjacent to the first transmission region 1041 with the second electrode 140Y interposed therebetween. The first transmission region 1041 has a first shape. The second transmission region 1042 can have a second shape different from the first shape. The specific difference between the first shape and the second shape is arbitrary. For example, the area of the second shape can be different from the area of the first shape.

[0132] The "first transmission region 1041" can not be a term indicating a specific transmission region 104. For example, as shown in Figure 4 a transmission region 104 different from that of Figure 3 may also correspond to the first transmission region 1041. Figure 4 The shape of the second electrode 140 and the transmission region 104 is the same as that of Figure 3 The shape of the second electrode 140 and the transmission region 104 is the same as that of Figure 4 In the example of Figure 4 In the example of

[0133] In a case where only a plurality of other transmission regions 104 having the same shape exist around one transmission region 104 as an object, the one transmission region 104 as an object is not referred to as the first transmission region 1041.

[0134] The second display area 102 may have a first concordance rate. The first concordance rate is a percentage of the total number of first concordance rates relative to the total number of transmission areas 104. The first concordance rate is the number of transmission areas 104 that can be referred to as the first transmission area 1041 in relation to the second transmission area 1042. The first concordance rate may, for example, be 80% or more, 85% or more, or 90% or more. The first concordance rate may, for example, be 95% or less, 97% or less, or 99% or less. The range of the first concordance rate can be defined by a first group consisting of 80%, 85%, and 90% and / or a second group consisting of 95%, 97%, and 99%. The range of the first concordance rate can be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the first concordance rate can be defined by a combination of any two values ​​included in the first group. The range of the first compliance rate can be defined by any combination of two values ​​included in the second group above. For example, the first compliance rate can be above 80% and below 99%, or above 80% and below 97%, or above 80% and below 95%, or above 80% and below 90%, or above 80% and below 85%, or above 85% and below 99%, or above 85% and below 97%, or above 85% and below 95%, or above 85% and below 90%, or above 90% and below 99%, or above 90% and below 97%, or above 90% and below 95%, or above 95% and below 99%, or above 95% and below 97%, or above 97% and below 99%.

[0135] The second transmission region 1042 can be adjacent to the first transmission region 1041, separated by the first electrode 120 and the second electrode 140Y. Figure 3 and Figure 4 In the example shown, the second transmission region 1042 is adjacent to the first transmission region 1041 in the first direction G1 of the element, separated by the first electrode 120 and the second electrode 140Y.

[0136] like Figure 3 and Figure 4 As shown, the transmission region 104 may include a third transmission region 1043. The third transmission region 1043 is adjacent to the first transmission region 1041 and the second transmission region 1042 across the second electrode 140Y. The third transmission region 1043 may have a third shape that is different from the first and second shapes. For example, the area of ​​the third shape may be different from the area of ​​the first and second shapes.

[0137] The second display area 102 may have a second concordance rate. The second concordance rate is a percentage of the total number of second concordance rates relative to the total number of transmission areas 104. The second concordance rate is the number of transmission areas 104 that can be referred to as the first transmission area 1041 in relation to the second transmission area 1042 and the third transmission area 1043. The range of the first concordance rate described above can be used as the range of the second concordance rate.

[0138] The third transmission region 1043 can be adjacent to the first transmission region 1041, separated by the first electrode 120 and the second electrode 140Y. Figure 3 and Figure 4 In the example shown, the third transmission region 1043 is adjacent to the first transmission region 1041 in the second direction G2 of the element, separated by the first electrode 120 and the second electrode 140Y.

[0139] like Figure 3 and Figure 4 As shown, the transmission region 104 may include a fourth transmission region 1044. The fourth transmission region 1044 is adjacent to the first transmission region 1041 and the second transmission region 1042 across the second electrode 140Y. The fourth transmission region 1044 may have a fourth shape different from the first and second shapes. For example, the area of ​​the fourth shape may be different from the area of ​​the first and second shapes. The fourth shape may also be different from the third shape.

[0140] The second display area 102 may have a third concordance rate. The third concordance rate is a percentage of the total number of third concordance rates relative to the total number of transmission areas 104. The third concordance rate is the number of transmission areas 104 that can be referred to as the first transmission area 1041 in relation to the second transmission area 1042, the third transmission area 1043, and the fourth transmission area 1044. The range of the first concordance rate described above can be used as the range of the third concordance rate.

[0141] The fourth transmission region 1044 can be adjacent to the first transmission region 1041, separated by the first electrode 120 and the second electrode 140Y. Figure 4 In the example shown, the fourth transmission region 1044 is adjacent to the first transmission region 1041 in the second direction G2 of the element, separated by the first electrode 120 and the second electrode 140Y.

[0142] like Figure 3 and Figure 4As shown, the transmission region 104 may include a fifth transmission region 1045. The fifth transmission region 1045 is adjacent to the first transmission region 1041 across the second electrode 140Y. The fifth transmission region 1045 may also be adjacent to the fourth transmission region 1044 across the second electrode 140Y. The fifth transmission region 1045 may have a fifth shape different from the first shape. For example, the area of ​​the fifth shape may be different from the area of ​​the first shape. The fifth shape may also be different from the second, third, and fourth shapes.

[0143] The second display area 102 may have a fourth concordance rate. The fourth concordance rate is a percentage of the total number of fourth concordance rates relative to the total number of transmission areas 104. The fourth concordance rate is the number of transmission areas 104 that can be referred to as the first transmission area 1041 in relation to the second transmission area 1042, the third transmission area 1043, the fourth transmission area 1044, and the fifth transmission area 1045. The range of the first concordance rate described above can be used as the range of the fourth concordance rate.

[0144] The fifth transmission region 1045 can be adjacent to the first transmission region 1041, separated by the first electrode 120 and the second electrode 140Y. Figure 3 and Figure 4 In the example shown, the fifth transmission region 1045 is adjacent to the first transmission region 1041 in the second direction G2 of the element, separated by the first electrode 120 and the second electrode 140Y.

[0145] like Figure 3 and Figure 4 As shown, the transmission region 104 may include a sixth transmission region 1046. The sixth transmission region 1046 is adjacent to the first transmission region 1041 across the second electrode 140Y. The sixth transmission region 1046 may have a sixth shape different from the first shape. For example, the area of ​​the sixth shape may be different from the area of ​​the first shape. The sixth shape may be different from the second, third, fourth, and fifth shapes.

[0146] The second display area 102 may have a fifth coincidence rate. The fifth coincidence rate is a percentage of the total number of fifth coincidence rates relative to the total number of transmission areas 104. The fifth coincidence rate is the number of transmission areas 104 that can be referred to as the first transmission area 1041 in relation to the second transmission area 1042, the third transmission area 1043, the fourth transmission area 1044, the fifth transmission area 1045, and the sixth transmission area 1046. The range of the first coincidence rate described above can be used as the range of the fifth coincidence rate.

[0147] The sixth transmission region 1046 can be adjacent to the first transmission region 1041, separated by the first electrode 120 and the second electrode 140Y. Figure 3 and Figure 4In the illustrated example, the 6th transmission region 1046 is adjacent to the 1st transmission region 1041 with the 1st electrode 120 and the 2nd electrode 140Y interposed therebetween in the element 1st direction G1.

[0148] Two transmission regions 104 having different shapes can be adjacent with the 1st electrode 120 and the 2nd electrode 140Y interposed therebetween in a direction in which the plurality of 1st electrodes 120 are regularly arranged. Figure 4 In the illustrated example, as described above, in the element 1st direction G1, the 1st transmission region 1041 is adjacent to the 2nd transmission region 1042, and the 1st transmission region 1041 is adjacent to the 6th transmission region 1046. Figure 3 In the illustrated example, as described above, in the element 2nd direction G2, the 1st transmission region 1041 is adjacent to the 3rd transmission region 1043, and the 1st transmission region 1041 is adjacent to the 4th transmission region 1044, and the 1st transmission region 1041 is adjacent to the 5th transmission region 1045.

[0149] According to the present embodiment, it is possible to suppress a case where light diffracted when passing through the transmission region 104 in a direction in which the plurality of 1st electrodes 120 are regularly arranged reinforces each other.

[0150] As described above, in the illustrated example, the 1st transmission region 1041 is adjacent to the 2nd transmission region 1042 with the 1st electrode 120 and the 2nd electrode 140Y interposed therebetween in the element 1st direction G1. Figure 5 As illustrated, the 2nd electrode 140Y or the transmission region 104 is present between two organic layers 130 adjacent in the element 1st direction G1 or the element 2nd direction G2. The structure of the 2nd display region 102 in the region between the two organic layers 130 adjacent in plan view can be classified into an 11th type T11, a 12th type T12, a 13th type T13, a 21st type T21, a 22nd type T22, or a 23rd type T23.

[0151] The 11th type T11 includes, between two organic layers 130 adjacent in the element 1st direction G1, a transmission region 104 having a size of 0.5 x the 12th period P12 or more in the element 1st direction G1.

[0152] The 12th type T12 includes, between two organic layers 130 adjacent in the element 1st direction G1, a transmission region 104 having a size of less than 0.5 x the 12th period P12 in the element 1st direction G1.

[0153] The 13th type T13 includes, between two organic layers 130 adjacent in the element 1st direction G1, the 2nd electrode 140Y continuously extending in the element 1st direction G1.

[0154] The 21st type T21 includes, between two organic layers 130 adjacent in the element 2nd direction G2, a transmission region 104 having a size of 0.5 x the 22nd period P22 or more in the element 2nd direction G2.

[0155] The 22nd type T22 includes, between two organic layers 130 adjacent in the element second direction G2, a transmissive region 104 having a size of less than 0.5 x the 22nd period P22 in the element second direction G2.

[0156] The 23rd type T23 includes, between two organic layers 130 adjacent in the element second direction G2, a second electrode 140Y continuously extending in the element second direction G2.

[0157] Although not illustrated, the structure of the second display region 102 between two adjacent organic layers 130 can also be classified into other types.

[0158] The 13th type T13 and the 23rd type T23 are preferably not locally concentrated. For example, a pixel group 115G including four organic layers 130 preferably includes any of the 11th type T11, the 12th type T12, the 21st type T21, and the 22nd type T22. In the case where the pixel group 115G includes any of the 11th type T11, the 12th type T12, the 21st type T21, and the 22nd type T22, the second electrode 140Y is broken somewhere of a path linking the four organic layers 130 in the element first direction G1 or the element second direction G2 in plan view. That is, the path linking the four organic layers 130 locally includes the transmissive region 104. Thereby, it is possible to suppress mutual enhancement of light diffracted when passing through the transmissive region 104. The pixel group 115G including any of the 11th type T11, the 12th type T12, the 21st type T21, and the 22nd type T22 is also referred to as a broken pixel group.

[0159] Figure 3 is a view that enlarges a part of Figure 3 The pixel group 115G includes a first organic layer 1301, a second organic layer 1302, a third organic layer 1303, and a fourth organic layer 1304. The first organic layer 1301 and the second organic layer 1302 are adjacent in the element first direction G1. The third organic layer 1303 and the fourth organic layer 1304 are adjacent in the element first direction G1. The first organic layer 1301 and the third organic layer 1303 are adjacent in the element second direction G2. The second organic layer 1302 and the fourth organic layer 1304 are adjacent in the element second direction G2.

[0160] The region between the first organic layer 1301 and the second organic layer 1302 is constituted by the 11th type T11. The region between the third organic layer 1303 and the fourth organic layer 1304 is constituted by the 12th type T12. The region between the first organic layer 1301 and the third organic layer 1303 is constituted by the 21st type T21. The region between the second organic layer 1302 and the fourth organic layer 1304 is constituted by the 23rd type T23.

[0161] The second display area 102 may have a first segmentation rate. The first segmentation rate is a percentage of the total number of pixel groups 115G present in the second display area 102 relative to the total number of segments. The first segmentation number includes any of the pixel groups 115G from types 11 (T11), 12 (T12), 21 (T21), and 22 (T22). The first segmentation rate may, for example, be 80% or higher, 85% or higher, or 90% or higher. The first segmentation rate may, for example, be 95% or lower, 97% or lower, or 99% or lower. The range of the first segmentation rate can be defined by a first group consisting of 80%, 85%, and 90% and / or a second group consisting of 95%, 97%, and 99%. The range of the first segmentation rate can be defined by a combination of any one value from the first group and any one value from the second group. The range of the first discrimination rate can be defined by any combination of two values ​​from the first group of values ​​mentioned above. The range of the first discrimination rate can be defined by any combination of two values ​​from the second group of values ​​mentioned above. For example, the first discrimination rate can be above 80% and below 99%, or above 80% and below 97%, or above 80% and below 95%, or above 80% and below 90%, or above 80% and below 85%, or above 85% and below 99%, or above 85% and below 97%, or above 85% and below 95%, or above 85% and below 90%, or above 90% and below 99%, or above 90% and below 97%, or above 90% and below 95%, or above 95% and below 99%, or above 95% and below 97%, or above 97% and below 99%.

[0162] like Figure 3 As shown, the second display area 102 may include an 11-12 arrangement T11-12 of type 11 and type 12 arranged in the first direction G1 of the element. The second display area 102 may include an 11-13 arrangement T11-13 of type 11 and type 13 arranged in the first direction G1 of the element. The second display area 102 may include a 12-13 arrangement of type 12 and type 13 arranged in the first direction G1 of the element.

[0163] The second display region 102 can include a 21-22 arrangement of the 21st type T21 and the 22nd type T22 arranged in the element second direction G2. The second display region 102 can include a 21-23 arrangement of the 21st type T21 and the 23rd type T23 arranged in the element second direction G2. The second display region 102 can include a 22-23 arrangement of the 22nd type T21 and the 23rd type T23 arranged in the element second direction G2.

[0164] As shown in FIG. 1, the second electrode 140Y can include a trunk electrode 141 and a branch electrode 142. The trunk electrode 141 constitutes a path from one electrode connection end to another electrode connection end. The branch electrode 142 is connected to the trunk electrode 141. Figure 4 Figure 6 As shown in FIG. 1, the second electrode 140Y can include a trunk electrode 141 and a branch electrode 142. The trunk electrode 141 constitutes a path from one electrode connection end to another electrode connection end. The branch electrode 142 is connected to the trunk electrode 141.

[0165] Figure 7 FIG. 14 is a plan view showing an example of the branch electrode 142. The branch electrode 142 can be a first branch electrode 142A, and can be a second branch electrode 142B.

[0166] The first branch electrode 142A includes two first electrode ends 1421 and one second electrode end 1422. The first electrode end 1421 is an end portion of the branch electrode 142 in the electrode fifth direction G5. The two first electrode ends 1421 are opposed in a direction perpendicular to the electrode fifth direction G5. The electrode fifth direction G5 can be parallel to the element first direction G1. Although not shown, the electrode fifth direction G5 can not be parallel to the element first direction G1. The second electrode end 1422 is an end portion of the branch electrode 142 in the electrode sixth direction G6. The electrode sixth direction G6 intersects the electrode fifth direction G5. The electrode sixth direction G6 can be perpendicular to the electrode fifth direction G5. The two first electrode ends 1421 and the one second electrode end 1422 are in contact with the transmission region 104.

[0167] The second branch electrode 142B includes one first electrode end 1421 and two second electrode ends 1422. The two second electrode ends 1422 are opposed in a direction perpendicular to the electrode sixth direction G6. The one first electrode end 1421 and the two second electrode ends 1422 are in contact with the transmission region 104.

[0168] ​The width W51 of the first electrode end 1421 can have a certain ratio with respect to the 21st period P21. The ratio of the width W51 to the 21st period P21 can be, for example, 0.4 or more, 0.6 or more, or 0.8 or more. The ratio of the width W51 to the 21st period P21 can be, for example, 1.2 or less, 1.4 or less, or 1.6 or less. The range of the ratio of the width W51 to the 21st period P21 can be defined by a first group consisting of 0.4, 0.6, and 0.8 and / or a second group consisting of 1.2, 1.4, and 1.6. The range of the ratio of the width W51 to the 21st period P21 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the width W51 to the 21st period P21 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the width W51 to the 21st period P21 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the width W51 to the 21st period P21 can be 0.4 or more and 1.6 or less, 0.4 or more and 1.4 or less, 0.4 or more and 1.2 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.6 or less, 0.6 or more and 1.6 or less, 0.6 or more and 1.4 or less, 0.6 or more and 1.2 or less, 0.6 or more and 0.8 or less, 0.8 or more and 1.6 or less, 0.8 or more and 1.4 or less, 0.8 or more and 1.2 or less, 1.2 or more and 1.6 or less, 1.2 or more and 1.4 or less, or 1.4 or more and 1.6 or less.

[0169] The width W51 can be, for example, 20 μm or more, 40 μm or more, or 60 μm or more. The width W51 can be, for example, 110 μm or less, 130 μm or less, or 150 μm or less. The range of the width W51 can be defined by a first group consisting of 20 μm, 40 μm, and 60 μm and / or a second group consisting of 110 μm, 130 μm, and 150 μm. The range of the width W51 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the width W51 can be defined by a combination of any two of the values included in the first group described above. The range of the width W51 can be defined by a combination of any two of the values included in the second group described above. For example, the width W51 can be 20 μm or more and 150 μm or less, 20 μm or more and 130 μm or less, 20 μm or more and 110 μm or less, 20 μm or more and 60 μm or less, 20 μm or more and 40 μm or less, 40 μm or more and 150 μm or less, 40 μm or more and 130 μm or less, 40 μm or more and 110 μm or less, 40 μm or more and 60 μm or less, 60 μm or more and 150 μm or less, 60 μm or more and 130 μm or less, 60 μm or more and 110 μm or less, 110 μm or more and 150 μm or less, 110 μm or more and 130 μm or less, or 130 μm or more and 150 μm or less.

[0170] The width W61 of the second electrode end 1422 can have a certain ratio with respect to the eleventh period P11. The ratio of the width W61 to the eleventh period P11 can be, for example, 0.4 or more, 0.6 or more, or 0.8 or more. The ratio of the width W61 to the eleventh period P11 can be, for example, 1.2 or less, 1.4 or less, or 1.6 or less. The range of the ratio of the width W61 to the eleventh period P11 can be defined by a first group consisting of 0.4, 0.6, and 0.8 and / or a second group consisting of 1.2, 1.4, and 1.6. The range of the ratio of the width W61 to the eleventh period P11 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the width W61 to the eleventh period P11 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the width W61 to the eleventh period P11 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the width W61 to the eleventh period P11 can be 0.4 or more and 1.6 or less, 0.4 or more and 1.4 or less, 0.4 or more and 1.2 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.6 or less, 0.6 or more and 1.6 or less, 0.6 or more and 1.4 or less, 0.6 or more and 1.2 or less, 0.6 or more and 0.8 or less, 0.8 or more and 1.6 or less, 0.8 or more and 1.4 or less, 0.8 or more and 1.2 or less, 1.2 or more and 1.6 or less, 1.2 or more and 1.4 or less, or 1.4 or more and 1.6 or less.

[0171] The width W61 can be 20 μm or more, 40 μm or more, or 60 μm or more, for example. The width W61 can be 110 μm or less, 130 μm or less, or 150 μm or less, for example. The range of the width W61 can be defined by the first group consisting of 20 μm, 40 μm, and 60 μm and / or the second group consisting of 110 μm, 130 μm, and 150 μm. The range of the width W61 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the width W61 can be defined by a combination of any two of the values included in the first group described above. The range of the width W61 can be defined by a combination of any two of the values included in the second group described above. For example, the width W61 can be 20 μm or more and 150 μm or less, 20 μm or more and 130 μm or less, 20 μm or more and 110 μm or less, 20 μm or more and 60 μm or less, 20 μm or more and 40 μm or less, 40 μm or more and 150 μm or less, 40 μm or more and 130 μm or less, 40 μm or more and 110 μm or less, 40 μm or more and 60 μm or less, 60 μm or more and 150 μm or less, 60 μm or more and 130 μm or less, 60 μm or more and 110 μm or less, 110 μm or more and 150 μm or less, 110 μm or more and 130 μm or less, or 130 μm or more and 150 μm or less.

[0172] By including the branch electrode 142 in the second electrode 140Y, the second electrode 140Y is easily arranged irregularly. Thus, the light diffracted when passing through the transmission region 104 can be further suppressed from being enhanced mutually.

[0173] The layer structure of the second electrode 140 will be described. Figure 3 is an enlarged plan view of the area surrounded by the double-dot chain line labeled with the reference sign VII in the organic device 100 of Figure 7 is an enlarged plan view of the area surrounded by the double-dot chain line labeled with the reference sign VII in the organic device 100 of

[0174] The second electrode 140 can include a plurality of layers. For example, the second electrode 140 can include a first layer 140A and a second layer 140B. The first layer 140A and the second layer 140B are formed by an evaporation method using the first mask 50A and the second mask 50B, respectively, which will be described later.

[0175] In the first display region 101, the first layers 140A can be arranged in the element third direction G3 and the element fourth direction G4. The element third direction G3 is a direction that intersects both the element first direction Gl and the element second direction G2. The angle that the element third direction G3 makes with respect to the element first direction Gl and the element second direction G2 is, for example, 20° or more and 70° or less. The element fourth direction G4 is a direction that intersects both the element first direction Gl and the element second direction G2. The angle that the element fourth direction G4 makes with respect to the element first direction Gl and the element second direction G2 is, for example, 20° or more and 70° or less. The element third direction G3 intersects the element fourth direction G4. For example, the element third direction G3 can also be orthogonal to the element fourth direction G4.

[0176] The reference sign G31 denotes a gap between two first layers 140A adjacent in the element third direction G3. The gap G31 can be, for example, 5 μm or more, 10 μm or more, or 15 μm or more. The gap G31 can be, for example, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the gap G31 can be defined by a first group consisting of 5 μm, 10 μm, and 15 μm and / or a second group consisting of 30 μm, 40 μm, and 50 μm. The range of the gap G31 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the gap G31 can be defined by a combination of any two of the values included in the first group described above. The range of the gap G31 can be defined by a combination of any two of the values included in the second group described above. For example, the gap G31 can be 5 μm or more and 50 μm or less, 5 μm or more and 40 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 30 μm or more and 50 μm or less, 30 μm or more and 40 μm or less, or 40 μm or more and 50 μm or less.

[0177] The reference sign G41 denotes a gap between two first layers 140A adjacent in the element fourth direction G4. As the range of the gap G41, the range of the gap G31 described above can be adopted.

[0178] In the first display region 101, the second layers 140B can be arranged in the element third direction G3 and the element fourth direction G4 in the same manner as the first layers 140A. As a range of the interval between two second layers 140B adjacent in the element third direction G3, the range of the interval G31 described above can be employed. As a range of the interval between two second layers 140B adjacent in the element fourth direction G4, the range of the interval G41 described above can be employed.

[0179] The first layers 140A can be connected to the second layers 140B in the element first direction G1. In this case, as shown in FIG. 1, in the first display region 101, the electrode overlapping regions 145 can be arranged in the element first direction G1 at a thirteenth pitch P13. The electrode overlapping region 145 is a region in which a plurality of layers of the second electrode 140 overlap when viewed in plan. In this embodiment, the electrode overlapping region 145 is a region in which the first layer 140A and the second layer 140B overlap. As a range of the thirteenth pitch P13, the range of the eleventh pitch P11 described above can be employed. Figure 8

[0180] The first layers 140A can be connected to the second layers 140B in the element second direction G2. In this case, in the first display region 101, the electrode overlapping regions 145 can be arranged in the element second direction G2 at a twenty-third pitch P23. As a range of the twenty-third pitch P23, the range of the twenty-first pitch P21 described above can be employed.

[0181] The width W51 of the first electrode end 1421 described above can have a certain ratio with respect to the twenty-third pitch P23. As a range of the ratio of the width W51 to the twenty-third pitch P23, the range of the ratio of the width W51 to the twenty-first pitch P21 can be employed.

[0182] The width W61 of the second electrode end 1422 described above can have a certain ratio with respect to the thirteenth pitch P13. As a range of the ratio of the width W61 to the thirteenth pitch P13, the range of the ratio of the width W61 to the eleventh pitch P11 can be employed.

[0183] ​The area of the electrode overlapping region 145 can be smaller than the area of the first layer 140A. The ratio of the area of the electrode overlapping region 145 to the area of the first layer 140A can be, for example, 0.02 or more, 0.05 or more, or 0.10 or more. The ratio of the area of the electrode overlapping region 145 to the area of the first layer 140A can be, for example, 0.20 or less, 0.30 or less, or 0.40 or less. The range of the ratio of the area of the electrode overlapping region 145 to the area of the first layer 140A can be defined by the first group consisting of 0.02, 0.05, and 0.10 and / or the second group consisting of 0.20, 0.30, and 0.40. The range of the ratio of the area of the electrode overlapping region 145 to the area of the first layer 140A can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the area of the electrode overlapping region 145 to the area of the first layer 140A can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the area of the electrode overlapping region 145 to the area of the first layer 140A can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the area of the electrode overlapping region 145 to the area of the first layer 140A can be 0.02 or more and 0.40 or less, 0.02 or more and 0.30 or less, 0.02 or more and 0.20 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 0.50 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, 0.20 or more and 0.40 or less, 0.20 or more and 0.30 or less, or 0.30 or more and 0.40 or less.

[0184] The area of the electrode overlapping region 145 can be smaller than the area of the second layer 140B. As the range of the ratio of the area of the electrode overlapping region 145 to the area of the second layer 140B, the range of the "ratio of the area of the electrode overlapping region 145 to the area of the first layer 140A" described above can be adopted.

[0185] Figure 7 is a view showing the state of the light emitting element 100 when the light emitting element 100 is viewed from the side of the first layer 140A. Figure 7A plan view of the state in which the organic device 100 is removed of the second electrode 140. The organic layer 130 can include a first organic layer 130A, a second organic layer 130B, and a third organic layer 130C. The first organic layer 130A, the second organic layer 130B, and the third organic layer 130C can be, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. In the following description, in the case where the structure of the organic layer common to the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C is described, the term "organic layer 130" and the reference numeral are used.

[0186] For the configuration of the second electrode 140 and the organic layer 130 in plan view, the organic device 100 is observed by using a digital microscope with a high magnification. Based on the observation result, the above-mentioned occupancy, area, size, interval, and the like can be calculated. In the case where the organic device 100 is provided with a cover such as a cover glass, the cover can be removed or destroyed, and then the second electrode 140 and the organic layer 130 can be observed. Instead of the digital microscope, a scanning electron microscope can be used.

[0187] As shown in FIGS. 1A and 1B, the organic device 100 can include a substrate 110, a first electrode 120, an organic layer 130, and a second electrode 140. The first electrode 120 can be provided on the substrate 110. The organic layer 130 can be provided on the first electrode 120. The second electrode 140 can be provided on the organic layer 130. Figure 8 Figure 9 As shown in FIGS. 1A and 1B, the organic device 100 can include a substrate 110, a first electrode 120, an organic layer 130, and a second electrode 140. The first electrode 120 can be provided on the substrate 110. The organic layer 130 can be provided on the first electrode 120. The second electrode 140 can be provided on the organic layer 130.

[0188] Next, an example of the layer structure of the organic device 100 will be described. Figure 7 is a cross-sectional view of the organic device of Figure 10 along line A-A. Figure 7 is a cross-sectional view of the organic device of Figure 11 along line B-B.

[0189] The organic device 100 can include a substrate 110 and an element 115 provided on the substrate 110. The element 115 can include a first electrode 120, an organic layer 130 provided on the first electrode 120, and a second electrode 140 provided on the organic layer 130.

[0190] The organic device 100 can include an insulating layer 160 provided between two adjacent first electrodes 120 in plan view. The insulating layer 160 can include, for example, polyimide. The insulating layer 160 can overlap with the end portion of the first electrode 120.

[0191] The insulating layer 160 can overlap with the electrode overlapping region 145 in plan view. For example, the electrode overlapping region 145 can be surrounded by the outline of the insulating layer 160 in plan view.

[0192] ​The electrode overlapping region 145 includes a plurality of layers of the second electrode 140. Therefore, the electrode overlapping region 145 has a lower transmittance than one layer of the second electrode 140. When light that has passed through the electrode overlapping region 145 is emitted from the organic device 100, the intensity of the light sometimes becomes uneven. By overlapping the insulating layer 160 with the electrode overlapping region 145, it is possible to suppress the intensity of the light from becoming uneven.

[0193] The organic device 100 can be of an active matrix type. For example, although not illustrated, the organic device 100 can be provided with a switch. The switch is electrically connected to each of the plurality of elements 115. The switch is, for example, a transistor. The switch can control the on / off of the voltage or the current to the corresponding element 115.

[0194] The substrate 110 can be a plate-shaped member having insulating properties. The substrate 110 preferably has transparency that allows light to pass therethrough.

[0195] In a case where the substrate 110 has a prescribed transparency, the transparency of the substrate 110 is preferably a degree of transparency that allows light emitted from the organic layer 130 to pass therethrough and be displayed. For example, the transmittance of the substrate 110 in the visible light region is preferably 70% or more, and more preferably 80% or more. The transmittance of the substrate 110 can be measured by a test method for total light transmittance of plastics-transparent materials according to JIS K7361-1.

[0196] The substrate 110 can or can not have flexibility. The substrate 110 can be appropriately selected in accordance with the use of the organic device 100.

[0197] As a material of the substrate 110, for example, a rigid material such as quartz glass, Pyrex (registered trademark) glass, synthetic quartz plate, alkali-free glass, or the like that does not have flexibility, or a flexible material such as a resin film, an optical resin plate, thin glass, or the like that has flexibility can be used. In addition, the substrate can be a laminate having a barrier layer on one or both sides of a resin film.

[0198] The thickness of the substrate 110 can be appropriately selected in accordance with the material used for the substrate 110, the use of the organic device 100, or the like, and can be, for example, 0.005 mm or more. In addition, the thickness of the substrate 110 can be 5 mm or less.

[0199] By applying a voltage between the first electrode 120 and the second electrode 140 or causing a current to flow between the first electrode 120 and the second electrode 140, the element 115 can realize a certain function. For example, in a case where the element 115 is a pixel of an organic EL display device, the element 115 can emit light that constitutes an image.

[0200] The first electrode 120 includes a material having conductivity. For example, the first electrode 120 includes a metal, a metal oxide having conductivity, another inorganic material having conductivity, or the like. The first electrode 120 can include a metal oxide having transparency and conductivity such as indium tin oxide.

[0201] As the material constituting the first electrode 120, a metal such as Au, Cr, Mo, Ag, Mg, an inorganic oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, and indium oxide, a conductive polymer such as a metal-doped polythiophene, or the like can be used. These conductive materials can be used alone or in combination with two or more. In the case of using two or more, layers each composed of the materials can be stacked. Alternatively, an alloy including two or more of the materials can be used. For example, a magnesium alloy such as MgAg or the like can be used.

[0202] The organic layer 130 contains an organic material. The organic layer 130 can exert a certain function when electricity is applied to the organic layer 130. The electricity application refers to application of a voltage to the organic layer 130 or passage of a current through the organic layer 130. As the organic layer 130, a light-emitting layer that emits light by electricity application, a layer that changes the transmittance or refractive index of light by electricity application, or the like can be used. The organic layer 130 can include an organic semiconductor material.

[0203] The stacked structure including the first electrode 120, the first organic layer 130A, and the second electrode 140 is also referred to as the first element 115A. The stacked structure including the first electrode 120, the second organic layer 130B, and the second electrode 140 is also referred to as the second element 115B. The stacked structure including the first electrode 120, the third organic layer 130C, and the second electrode 140 is also referred to as the third element. In the case where the organic device 100 is an organic EL display device, the first element 115A, the second element 115B, and the third element are sub-pixels, respectively.

[0204] In the following description, in the case where the structure of an element common to the first element 115A, the second element 115B, and the third element is described, the term and the reference numeral "element 115" are used.

[0205] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 positioned therebetween is driven. In the case where the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130, and the light is extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0206] In the case where the organic layer 130 includes a light-emitting layer that emits light by electricity application, the organic layer 130 can further include a hole-injection layer, a hole-transport layer, an electron-transport layer, an electron-injection layer, or the like.

[0207] For example, in the case where the first electrode 120 is an anode, the organic layer 130 can have a hole injection transport layer between the light-emitting layer and the first electrode 120. The hole injection transport layer can be a hole injection layer having a hole injection function, a hole transport layer having a hole transport function, or both a hole injection function and a hole transport function. In addition, the hole injection transport layer can be a layer in which a hole injection layer and a hole transport layer are stacked.

[0208] In the case where the second electrode 140 is a cathode, the organic layer 130 can have an electron injection transport layer between the light-emitting layer and the second electrode 140. The electron injection transport layer can be an electron injection layer having an electron injection function, an electron transport layer having an electron transport function, or both an electron injection function and an electron transport function. In addition, the electron injection transport layer can be a layer in which an electron injection layer and an electron transport layer are stacked.

[0209] The light-emitting layer contains a light-emitting material. The light-emitting layer can contain an additive that provides good leveling.

[0210] As the light-emitting material, a known material can be used, such as a pigment-based material, a metal complex-based material, a polymer-based material, or the like.

[0211] As the pigment-based material, for example, a cyclopentadiene derivative, a tetraphenylbutadiene derivative, a triphenylamine derivative, an oxadiazole derivative, a pyrazoloquinoline derivative, a diphenylstyrylbenzene derivative, a diphenylstyrylarylene derivative, a thiol derivative, a thiophene ring compound, a pyridine ring compound, a perinone derivative, a perylene derivative, an oligothiophene derivative, an oxadiazole dimer, a pyrazoline dimer, or the like can be used.

[0212] As the metal complex-based material, for example, an aluminum quinolyl complex, a beryllium benzoquinolyl complex, a zinc benzoxazole complex, a zinc benzothiazole complex, a zinc azomethine complex, a zinc porphyrin complex, a eucalyptus complex, or the like, a metal complex having Al, Zn, Be, or the like or a rare earth metal such as Tb, Eu, Dy as a central metal and having an oxadiazole, a thiadiazole, a phenylpyridine, a phenylbenzimidazole, a quinoline structure, or the like as a ligand can be used.

[0213] As the polymer-based material, for example, a poly-p-phenylenevinylene derivative, a polythiophene derivative, a poly-p-phenylene derivative, a polysilane derivative, a polyacetylene derivative, a polyvinylcarbazole derivative, a polyfluorene derivative, a polyquinoxaline derivative, a copolymer thereof, or the like can be used.

[0214] For the purpose of improving luminous efficiency, changing the wavelength of light emission, and the like, the light-emitting layer can contain a dopant. As the dopant, for example, a perylene derivative, a coumarin derivative, a rubrene derivative, a quinacridone derivative, a squarylium derivative, a porphyrin derivative, a styryl colorant, a naphthacene derivative, a pyrazoline derivative, decacyclene, phenoxazone, a quinoxaline derivative, a carbazole derivative, a fluorene derivative, and the like can be used. In addition, as the dopant, an organometallic complex having a heavy metal ion such as platinum or iridium at the center and exhibiting phosphorescence can be used. As the dopant, one kind alone can be used, or two or more kinds can be used.

[0215] In addition, as the light-emitting material and the dopant, for example, the materials described in

[0094] to

[0099] of Japanese Patent Application Publication No. 2010-272891 or

[0053] to

[0057] of International Publication No. 2012 / 132126 can be used.

[0216] The film thickness of the light-emitting layer is not particularly limited as long as it is a film thickness that can provide a site for recombination of electrons and holes and exhibit a light-emitting function, and can be, for example, 1 nm or more, and can be, for example, 500 nm or less.

[0217] As the hole-injection-transporting material used for the hole-injection-transporting layer, a known material can be used. For example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a pyrazolone derivative, a phenylenediamine derivative, an arylamine derivative, an amino-substituted chalcone derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, a hydrazone derivative, a stilbene derivative, a silazane derivative, a polythiophene derivative, a polyaniline derivative, a polypyrole derivative, an aniline derivative, an anthracene derivative, a carbazole derivative, a fluorene derivative, a diphenylstyrylbenzene derivative, a polyphenylacetylene derivative, a porphyrin derivative, a styrylamine derivative, and the like can be used. In addition, a spiro compound, a phthalocyanine compound, a metal oxide, and the like can be exemplified. In addition, for example, the compounds described in Japanese Patent Application Publication No. 2011-119681, International Publication No. 2012 / 018082, Japanese Patent Application Publication No. 2012-069963, and

[0106] of International Publication No. 2012 / 132126 can be appropriately selected and used.

[0218] In addition, in the case where the hole-injection-transporting layer is a hole-injection-transporting layer in which a hole-injection layer and a hole-transporting layer are stacked, the hole-injection layer can contain the additive A, the hole-transporting layer can contain the additive A, and the hole-injection layer and the hole-transporting layer can contain the additive A. The additive A can be a low-molecular compound or a high-molecular compound. Specifically, a fluorine-based compound, an ester-based compound, a hydrocarbon-based compound, and the like can be used.

[0219] As the electron-injection-transporting material used for the electron-injection-transporting layer, a known material can be used. For example, an alkali metal, an alloy of an alkali metal, a halide of an alkali metal, an alkaline earth metal, a halide of an alkaline earth metal, an oxide of an alkaline earth metal, an organic complex of an alkali metal, a halide or an oxide of magnesium, aluminum oxide, or the like can be used. In addition, as the electron-injection-transporting material, for example, bathocuproin, bathophenanthroline, a phenanthroline derivative, a triazole derivative, an oxadiazole derivative, a pyridine derivative, a nitro-substituted fluorene derivative, an anthracenequinone dimalonate derivative, a diphenylquinone derivative, a thiopyran dioxide derivative, an aromatic ring tetracarboxylic anhydride such as naphthalene or perylene, a carbodiimide, a fluorenylidene methane derivative, an anthracenequinone dimalonate derivative, an anthraceneone derivative, a quinoxaline derivative, a metal complex such as a hydroxyquinoline complex, a phthalocyanine compound, a stilbenylpyrazine derivative, or the like can be used.

[0220] In addition, a metal-doped layer in which an alkali metal or an alkaline earth metal is doped in an electron-transporting organic material can be formed, and used as the electron-injection-transporting layer. As the electron-transporting organic material, for example, bathocuproin, bathophenanthroline, a phenanthroline derivative, a triazole derivative, an oxadiazole derivative, a pyridine derivative, a metal complex such as tris(8-hydroxyquinoline)aluminum (Alq3), and a high-molecular derivative thereof, or the like can be used. In addition, as the metal to be doped, Li, Cs, Ba, Sr, or the like can be used.

[0221] The second electrode 140 includes a material having conductivity such as a metal. The second electrode 140 is formed on the organic layer 130 by an evaporation method using a mask to be described later. As the material constituting the second electrode 140, platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, or the like can be used. These materials can be used alone or two or more kinds of materials can be used in combination. In the case of using two or more kinds, layers composed of the respective materials can be stacked. In addition, an alloy including two or more kinds of materials can be used. For example, a magnesium alloy such as MgAg, an aluminum alloy such as AlLi, AlCa, AlMg, an alloy of an alkali metal and an alkaline earth metal, or the like can be used.

[0222] The thickness of the second electrode 140 can be, for example, 5 nm or more, 10 nm or more, 50 nm or more, or 100 nm or more. The thickness of the second electrode 140 can be, for example, 200 nm or less, 500 nm or less, 1 μm or less, or 100 μm or less. The range of the thickness of the second electrode 140 can be defined by a first group consisting of 5 nm, 10 nm, 50 nm, and 100 nm and / or a second group consisting of 200 nm, 500 nm, 1 μm, and 100 μm. The range of the thickness of the second electrode 140 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the thickness of the second electrode 140 can be defined by a combination of any two of the values included in the first group. The range of the thickness of the second electrode 140 can be defined by a combination of any two of the values included in the second group. For example, the thickness of the second electrode 140 can be 5 nm or more and 100 μm or less, 5 nm or more and 1 μm or less, 5 nm or more and 500 nm or less, 5 nm or more and 200 nm or less, 5 nm or more and 100 nm or less, 5 nm or more and 50 nm or less, 5 nm or more and 10 nm or less, 10 nm or more and 100 μm or less, 10 nm or more and 1 μm or less, 10 nm or more and 500 nm or less, 10 nm or more and 200 nm or less, 10 nm or more and 100 nm or less, 50 nm or more and 100 μm or less, 50 nm or more and 1 μm or less, 50 nm or more and 500 nm or less, 50 nm or more and 200 nm or less, 50 nm or more and 100 nm or less, 100 nm or more and 100 μm or less, 100 nm or more and 1 μm or less, 100 nm or more and 500 nm or less, 100 nm or more and 200 nm or less, 200 nm or more and 100 μm or less, 200 nm or more and 1 μm or less, 200 nm or more and 500 nm or less, 500 nm or more and 100 μm or less, 500 nm or more and 1 μm or less, or 1 μm or more and 100 μm or less.

[0223] The smaller the thickness of the electrode 140, the higher the transmittance of the electrode 140 and the non-transmissive region 103. Light incident on the non-transmissive region 103 can also reach the sensor in accordance with the transmittance of the non-transmissive region 103. By increasing the transmittance of the non-transmissive region 103, the amount of light received by the sensor can be increased.

[0224] The thickness of the substrate 110, the thickness of the second electrode 140, and the thickness of each component of the organic device 100 can be measured by observing an image of a cross section of the organic device 100 using a scanning electron microscope.

[0225] Next, a method of forming the second electrode 140 of the above-described organic device 100 by an evaporation method will be described. Figure 11 is a view showing an evaporation apparatus 10. The evaporation apparatus 10 performs an evaporation process of evaporating an evaporation material onto an object.

[0226] The evaporation apparatus 10 can have an evaporation source 6, a heater 8, and a mask apparatus 40 inside thereof. The evaporation apparatus 10 can have an exhaust unit for making the inside of the evaporation apparatus 10 a vacuum atmosphere. The evaporation source 6 is, for example, a crucible. The evaporation source 6 houses an evaporation material 7 such as a conductive material. The heater 8 heats the evaporation source 6 to evaporate the evaporation material 7 in a vacuum atmosphere. The mask apparatus 40 is disposed in opposition to the crucible 6.

[0227] As shown in Figure 12 , the mask apparatus 40 can have at least one mask 50 and a frame 41 that supports the mask 50. The frame 41 can include a first frame surface 41a and a second frame surface 41b. The mask 50 can be fixed to the first frame surface 41a. The second frame surface 41b is located on the opposite side of the first frame surface 41a. In addition, the frame 41 can include an opening 42. The opening 42 penetrates from the first frame surface 41a to the second frame surface 41b. The mask 50 can be fixed to the frame 41 in a manner that it crosses the opening 42 when viewed from above. In addition, the frame 41 can support the mask 50 in a state that it is stretched in the surface direction thereof. Thus, the mask 50 can be inhibited from being deflected.

[0228] As the mask 50, the first mask 50A or the second mask 50B described later can be used. In the following description, in the case of describing the mask structure common to the first mask 50A and the second mask 50B, the term "mask 50" and the reference numeral are used. The same applies to the components of the mask such as the through hole, the shield region, and the like described later, and in the case of describing the content common to the first mask 50A and the second mask 50B, the reference numeral without the letter such as "53", "54", and the like is used. On the other hand, in the case of describing the content peculiar to each of the first mask 50A and the second mask 50B, the reference numeral with the corresponding letter such as "A", "B", and the like attached after the number is sometimes used.

[0229] The mask 50 of the mask device 40 opposes the substrate 110. The substrate 110 is an object to which the evaporation material 7 is attached. The substrate 110 includes a first surface 111 and a second surface 112. The first surface 111 opposes the mask 50. The mask 50 includes a plurality of through holes 53. The through holes 53 allow the evaporation material 7 flying from the evaporation source 6 to pass therethrough. The evaporation material 7 that has passed through the through holes 53 is attached to the first surface 111 of the substrate 110. The mask 50 includes a first surface 51a and a second surface 51b. The first surface 51a opposes the first surface 111. The second surface 51b is located on the opposite side of the first surface 51a. The through holes 53 pass through from the first surface 51a to the second surface 51b.

[0230] The evaporation device 10 can include a substrate holder 2 that holds the substrate 110. The substrate holder 2 can be movable in the thickness direction of the substrate 110. The substrate holder 2 can be movable in the surface direction of the substrate 110. The substrate holder 2 can control the inclination of the substrate 110. For example, the substrate holder 2 can include a plurality of chucks mounted to the outer edge of the substrate 110. Each of the chucks can be independently movable in the thickness direction and the surface direction of the substrate 110.

[0231] The evaporation device 10 can include a mask holder 3 that holds the mask device 40. The mask holder 3 can be movable in the thickness direction of the mask 50. The mask holder 3 can be movable in the surface direction of the mask 50. For example, the mask holder 3 can include a plurality of chucks mounted to the outer edge of the frame 41. Each of the chucks can be independently movable in the thickness direction and the surface direction of the mask 50.

[0232] By moving at least either one of the substrate holder 2 and the mask holder 3, the position of the mask 50 of the mask device 40 with respect to the substrate 110 can be adjusted.

[0233] The evaporation device 10 can include a cooling plate 4. The cooling plate 4 can be disposed on the second surface 112 side of the substrate 110. The cooling plate 4 can have a flow path for circulating a refrigerant inside the cooling plate 4. The cooling plate 4 can suppress the temperature of the substrate 110 from rising during the evaporation process.

[0234] The evaporation device 10 can include a magnet 5 disposed on the side of the second surface 112. The magnet 5 can overlap the cooling plate 4. The magnet 5 can attract the mask 50 toward the substrate 110 by magnetic force. Thus, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. Thus, the generation of a shadow in the evaporation process can be suppressed. Therefore, the dimensional accuracy and the positional accuracy of the second electrode 140 can be improved. In the present application, the shadow refers to a phenomenon in which the evaporation material 7 enters the gap between the mask 50 and the substrate 110, thereby making the thickness of the second electrode 140 uneven. In addition, the mask 50 can be attracted toward the substrate 110 by an electrostatic chuck using electrostatic force.

[0235] Next, the mask device 40 will be described. Figure 13 is a plan view illustrating the mask device 40. The mask device 40 can include two or more masks 50. The mask 50 can be fixed to the frame 41, for example, by welding.

[0236] The frame 41 includes a pair of first edges 411 and a pair of second edges 412. The frame 41 can have a rectangular profile. The mask 50 in a state in which tension is applied can be fixed to the first edge 411. The first edge 411 can be longer than the second edge 412. The frame 41 can include an opening 42 surrounded by the pair of first edges 411 and the pair of second edges 412.

[0237] The mask 50 includes at least one unit 52. The unit 52 includes a through-hole 53 and a shield region 54. The mask 50 can include two or more units 52. In the case where the mask 50 is used to manufacture a display device such as an organic EL display device, one unit 52 can correspond to one display region, i.e., one screen, of one organic EL display device. One unit 52 can also correspond to a plurality of display regions. The mask 50 can include the shield region 54 between the units 52. Although not illustrated, the mask 50 can also include the through-hole 53 between the units 52.

[0238] Each unit 52 can have a profile that is substantially quadrangular in plan view, more accurately, a profile that is substantially rectangular in plan view. Each unit 52 can have various shapes of profiles according to the shape of the display region of the organic EL display device. For example, each unit 52 can have a circular profile.

[0239] Figure 14 is a plan view that is an enlarged representation of one example of the mask 50. The mask 50 has a mask first direction D1 and a mask second direction D2 that intersects the mask first direction D1. The mask first direction D1 can be orthogonal to the mask second direction D2. It can be that the mask first direction D1 corresponds to the element first direction G1 and the mask second direction D2 corresponds to the element second direction G2.

[0240] The mask 50 has through-holes 53 and a shield region 54. The through-holes 53 are arranged in the mask first direction Dl and the mask second direction D2.

[0241] When the mask 50 is viewed in the normal direction of the first surface 51a, the mask 50 has a mask third region M3 and a mask fourth region M4. The mask third region M3 corresponds to the first display region 101 of the organic device 100. The mask fourth region M4 corresponds to the second display region 102 of the organic device 100.

[0242] In the mask third region M3, the through-holes 53 have a third opening ratio. The third opening ratio is calculated by dividing the sum of the areas of the through-holes 53 located in the mask third region M3 by the area of the mask third region M3. In the mask fourth region M4, the through-holes 53 have a fourth opening ratio. The fourth opening ratio is calculated by dividing the sum of the areas of the through-holes 53 located in the mask fourth region M4 by the area of the mask fourth region M4. The fourth opening ratio can be smaller than the third opening ratio.

[0243] The ratio of the fourth opening ratio to the third opening ratio can be, for example, 0.2 or more, 0.3 or more, or 0.4 or more. The ratio of the fourth opening ratio to the third opening ratio can be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the fourth opening ratio to the third opening ratio can be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0244] The mask 50 can have a calibration mark 50M. The calibration mark 50M is formed, for example, at a corner of the unit 52 of the mask 50. The calibration mark 50M can be used for alignment of the mask 50 with respect to the substrate 110 in a process of forming the second electrode 140 on the substrate 110 by the evaporation method using the mask 50. The calibration mark 50M can be formed, for example, at a position overlapping the frame 41. The calibration mark 50M can be used for alignment of the mask 50 with the frame 41 in manufacturing the mask apparatus 40.

[0245] In the process of forming the second electrode 140, a plurality of masks 50 can be used. For example, as shown in FIG. 6, the mask 50 can include a first mask 50A and a second mask 50B. The first mask 50A and the second mask 50B can constitute different mask apparatuses 40. The mask apparatus 40 including the first mask 50A will be referred to as a first mask apparatus 40A. The mask apparatus 40 including the second mask 50B will be referred to as a second mask apparatus 40B. Figure 15

[0246] In the process of forming the second electrode 140, for example, the first layer 140A of the second electrode 140 is formed on the substrate 110 using the first mask apparatus 40A in the evaporation apparatus 10. Subsequently, the second layer 140B of the second electrode 140 is formed on the substrate 110 using the second mask apparatus 40B in the evaporation apparatus 10. In this way, in the process of forming the second electrode 140 of the organic device 100, a plurality of masks 50, such as the first mask 50A and the second mask 50B, are used in sequence. A group of the plurality of masks 50 used for forming the second electrode 140 of the organic device 100 will be referred to as a mask group.

[0247] Figures 16-20 FIG. 7 is a view showing an example of a cross-sectional structure of the mask 50. The mask 50 has a plurality of through-holes 53 formed in a metal plate 51. The through-holes 53 penetrate the metal plate 51 from a first face 51a to a second face 51b.

[0248] The through-hole 53 can include a first recess 531 and a second recess 532. The first recess 531 is located on the first face 51a side. The second recess 532 is located on the second face 51b side. The first recess 531 is connected to the second recess 532 in the thickness direction of the metal plate 51.

[0249] The size r2 of the second recess 532 can be larger than the size r1 of the first recess 531 when viewed from above. The first recess 531 can be formed by processing the metal plate 51 from the first face 51a side using etching or the like. The second recess 532 can be formed by processing the metal plate 51 from the second face 51b side using etching or the like. The first recess 531 and the second recess 532 are connected at a connection portion 533.

[0250] ​The through-hole 53 has a through portion 534. The opening area of the through-hole 53 in plan view is smallest in the through portion 534. The through portion 534 can be demarcated by the connecting portion 533.

[0251] In the evaporation method using the mask 50, the evaporation material 7 that has passed through the through portion 534 of the through-hole 53 from the second surface 51b side to the first surface 51a side is attached to the substrate 110, and thereby the above-described first layer 140A, the second layer 140B, the third layer 140C, and the like are formed on the substrate 110. The profile of the layers formed on the substrate 110 in the in-plane direction of the substrate 110 is determined by the profile of the through portion 534 in plan view. In the plan view of the mask 50 described later, the profile of the through-hole 53 is the profile of the through portion 534. Figure 13 The profile of the through-hole 53 shown in the plan view is the profile of the through portion 534. The area of the through-hole 53 can be the area of the through portion 534. The size of the through-hole 53 in plan view can be the size r of the through portion 534.

[0252] The region of the metal plate 51 other than the through portion 534 can shield the evaporation material 7 toward the substrate 110. The region of the metal plate 51 other than the through portion 534 is also referred to as a shield region 54. In the plan view of the mask 50, the shield region 54 is shown in hatching with oblique lines. Figure 14 、 Figure 16 、 Figure 17 、 Figure 15 In the plan view of the mask 50, the shield region 54 is shown in hatching with oblique lines.

[0253] The shield region 54 of the mask fourth region M4 can include a recess that does not pass through the metal plate 51. By providing the recess in the mask fourth region M4, it is possible to reduce the rigidity of the mask fourth region M4. Thereby, it is possible to reduce the difference between the rigidity of the mask fourth region M4 and the rigidity of the mask third region M3. Therefore, it is possible to suppress the occurrence of wrinkles on the mask 50 due to the difference in rigidity. Wrinkles are likely to occur, for example, when a tension is applied to the mask 50.

[0254] The thickness T of the mask 50 can be, for example, 5 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The thickness T of the mask 50 can be, for example, 25 μm or less, 30 μm or less, 50 μm or less, or 100 μm or less. The thickness T of the mask 50 can be limited by a first group consisting of 5 μm, 10 μm, 15 μm, and 20 μm and / or a second group consisting of 25 μm, 30 μm, 50 μm, and 100 μm. The thickness T of the mask 50 can be limited by a combination of any one of the values included in the first group and any one of the values included in the second group. The thickness T of the mask 50 can be limited by a combination of any two of the values included in the first group. The thickness T of the mask 50 can be limited by a combination of any two of the values included in the second group. For example, the thickness T of the mask 50 can be 5 μm or more and 100 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 100 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 100 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 30 μm or less, 30 μm or more and 100 μm or less, 30 μm or more and 50 μm or less, or 50 μm or more and 100 μm or less.

[0255] As a method of measuring the thickness T of the mask 50, a contact type measurement method can be employed. As the contact type measurement method, "MT1271" of a length gauge HEIDENHAIM-METRO manufactured by HEIDENHAIM Co., Ltd. provided with a ball bushing guide type plunger can be used.

[0256] The cross-sectional shape of the through-hole 53 is not limited toFigure 16 The through-hole 53 can be formed by various methods other than etching. For example, the mask 50 can be formed by plating in a manner to produce the through-hole 53.

[0257] As a material constituting the mask 50, for example, a nickel-containing iron alloy can be used. The iron alloy can contain cobalt in addition to nickel. For example, as a material of the mask 50, an iron alloy in which the total content of nickel and cobalt is 30% by mass or more and 54% by mass or less and the content of cobalt is 0% by mass or more and 6% by mass or less can be used. As the iron alloy containing nickel or nickel and cobalt, an Invar alloy material containing 34% by mass or more and 38% by mass or less of nickel, a super Invar alloy material containing cobalt in addition to 30% by mass or more and 34% by mass or less of nickel, a low thermal expansion Fe-Ni-based plating alloy containing 38% by mass or more and 54% by mass or less of nickel, and the like can be listed. By using such an iron alloy, the thermal expansion coefficient of the mask 50 can be reduced. For example, in a case where a glass substrate is used as the substrate 110, the thermal expansion coefficient of the mask 50 can be set to a value as low as that of the glass substrate. Thereby, at the time of the vapor deposition process, it is possible to suppress a case where the dimensional accuracy or the positional accuracy of the vapor deposition layer formed on the substrate 110 is reduced due to a difference in the thermal expansion coefficient between the mask 50 and the substrate 110.

[0258] Next, the first mask 50A will be described in detail. Figure 16 is a plan view that enlarges the mask third region M3 and the mask fourth region M4 of the first mask 50A. The first mask 50A has a first through-hole 53A and a first shield region 54A.

[0259] The first mask 50A has a mask first direction D1, a mask second direction D2, a mask third direction D3, and a mask fourth direction D4. In the vapor deposition process, the mask first direction D1 can be parallel to the element first direction G1. In the vapor deposition process, the mask second direction D2 can be parallel to the element second direction G2. The mask third direction D3 is a direction that intersects both the mask first direction D1 and the mask second direction D2. The angle that the mask third direction D3 makes with respect to the mask first direction D1 and the mask second direction D2 is, for example, 20° or more and 70° or less. The mask fourth direction D4 is a direction that intersects both the mask first direction D1 and the mask second direction D2. The angle that the mask fourth direction D4 makes with respect to the mask first direction D1 and the mask second direction D2 is, for example, 20° or more and 70° or less. The mask third direction D3 intersects the mask fourth direction D4. For example, the mask third direction D3 can be orthogonal to the mask fourth direction D4.

[0260] In the third region M3 of the mask, the first through hole 53A can be arranged along the third direction D3 of the mask with a period of 35 P35. In the third region M3 of the mask, the first through hole 53A can be arranged along the fourth direction D4 of the mask with a period of 45 P45.

[0261] The designation G35 indicates the spacing between two adjacent first through-holes 53A located in the third region M3 of the mask and in the third direction D3 of the mask. The spacing G35 can be, for example, 5 μm or more, 10 μm or more, or 15 μm or more. The spacing G35 can be, for example, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the spacing G35 can be defined by a first group consisting of 5 μm, 10 μm, and 15 μm and / or a second group consisting of 30 μm, 40 μm, and 50 μm. The range of the spacing G35 can be defined by a combination of any one value from the first group and any one value from the second group. The range of the spacing G35 can be defined by a combination of any two values ​​from the first group. The range of the spacing G35 can be defined by a combination of any two values ​​from the second group. For example, the spacing G35 can be greater than 5μm and less than 50μm, greater than 5μm and less than 40μm, greater than 5μm and less than 30μm, greater than 5μm and less than 15μm, greater than 5μm and less than 10μm, greater than 10μm and less than 50μm, greater than 10μm and less than 40μm, greater than 10μm and less than 30μm, greater than 10μm and less than 15μm, greater than 15μm and less than 50μm, greater than 15μm and less than 40μm, greater than 15μm and less than 30μm, greater than 30μm and less than 50μm, greater than 30μm and less than 40μm, or greater than 40μm and less than 50μm.

[0262] The designation G45 indicates the spacing between two adjacent first through holes 53A located in the fourth region M4 of the mask and in the fourth direction D4 of the mask. The range of the spacing G45 can be the range of the spacing G35 described above.

[0263] like Figure 17 As shown, in the fourth region M4 of the mask, the first through-hole 53A can be arranged along the third direction D3 of the mask. In the fourth region M4 of the mask, the distance K35 between the center points of two adjacent first through-holes 53A in the third direction D3 of the mask can be N1 times the 35th period P35. N1 can be a number greater than 1. N1 can be an integer greater than 1. The value of N1 can vary depending on the position.

[0264] The average of N1 may be, for example, 1.1 or more, 1.2 or more, or 1.5 or more. The average of N1 may be, for example, 2.0 or less, 2.5 or less, or 3.0 or less. The range of the average of N1 can be defined by a first group consisting of 1.1, 1.2, and 1.5 and / or a second group consisting of 2.0, 2.5, and 3.0. The range of the average of N1 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the average of N1 can be defined by a combination of any two of the values included in the first group described above. The range of the average of N1 can be defined by a combination of any two of the values included in the second group described above. For example, the average of N1 can be 1.1 or more and 3.0 or less, 1.1 or more and 2.5 or less, 1.1 or more and 2.0 or less, 1.1 or more and 1.5 or less, 1.1 or more and 1.2 or less, 1.2 or more and 3.0 or less, 1.2 or more and 2.5 or less, 1.2 or more and 2.0 or less, 1.2 or more and 1.5 or less, 1.5 or more and 3.0 or less, 1.5 or more and 2.5 or less, 1.5 or more and 2.0 or less, 2.0 or more and 3.0 or less, 2.0 or more and 2.5 or less, 2.5 or more and 3.0 or less.

[0265] The ratio of the standard deviation of N1 to the average value of N1 may be, for example, 0.2 or more, 0.3 or more, or 0.4 or more. The ratio of the standard deviation of N1 to the average value of N1 may be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the standard deviation of N1 to the average value of N1 can be defined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the standard deviation of N1 to the average value of N1 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the standard deviation of N1 to the average value of N1 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the standard deviation of N1 to the average value of N1 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the standard deviation of N1 to the average value of N1 can be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0266] In the mask fourth region M4, the first through holes 53A can be arranged along the mask fourth direction D4. In the mask fourth region M4, the distance K45 between the center points of two first through holes 53A adjacent in the mask fourth direction D4 can be N2 times the 45th period P45. N2 can be a number of 1 or more. N2 can be an integer of 1 or more. The value of N2 can be different depending on the position. As a range of the average value of N2, the range of the average value of N1 described above can be adopted. As a range of the ratio of the standard deviation of N2 to the average value of N2, the range of the "ratio of the standard deviation of N1 to the average value of N1" described above can be adopted.

[0267] Reference Signs List Figure 18 The second mask 50B will be described. For portions of the second mask 50B that are similarly configured as the first mask 50A, the description of the overlapping portions is sometimes omitted.

[0268] The second mask 50B has second through holes 53B and a second shield region 54B. In the mask third region M3, the second through holes 53B can be arranged in the 36th period P36 along the mask third direction D3 as with the first through holes 53A. The 36th period P36 can be the same as the 35th period P35 in the first mask 50A. In the mask third region M3, the second through holes 53B can be arranged in the 46th period P46 along the mask fourth direction D4 as with the first through holes 53A. The 46th period P46 can be the same as the 45th period P45 in the first mask 50A.

[0269] The reference sign G36 denotes a gap between two second through holes 53B adjacent in the mask third direction D3 in the mask third region M3. As a range of the gap G36, the range of the gap G35 described above can be adopted.

[0270] The reference sign G46 denotes a gap between two second through holes 53B adjacent in the mask fourth direction D4 in the mask third region M3. As a range of the gap G46, the range of the gap G35 described above can be adopted.

[0271] In the mask fourth region M4, the second through holes 53B can be arranged along the mask third direction D3. In the mask fourth region M4, a distance K36 between center points of two second through holes 53B adjacent in the mask third direction D3 can be N3 times the 36th period P36. N3 can be a number of 1 or more. N3 can be an integer of 1 or more. The value of N3 can vary depending on the position. As a range of an average value of N3, the range of the average value of N1 described above can be adopted. As a range of a ratio of a standard deviation of N3 to the average value of N3, the range of the "ratio of the standard deviation of N1 to the average value of N1" described above can be adopted.

[0272] In the mask fourth region M4, the second through holes 53B can be arranged along the mask fourth direction D4. In the mask fourth region M4, a distance K46 between center points of two second through holes 53B adjacent in the mask fourth direction D4 can be N4 times the 46th period P46. N4 can be a number of 1 or more. N4 can be an integer of 1 or more. The value of N4 can vary depending on the position. As a range of an average value of N4, the range of the average value of N1 described above can be adopted. As a range of a ratio of a standard deviation of N4 to the average value of N4, the range of the "ratio of the standard deviation of N1 to the average value of N1" described above can be adopted.

[0273] In the method of measuring the shape and arrangement of the through holes 53A to 53B of each mask 50A to 50B, parallel light is made to enter one of the first surface 51a and the second surface 51b in the normal direction of each mask. The parallel light exits from the other of the first surface 51a and the second surface 51b. The shape of the region occupied by the exiting light is measured as the shape of the through hole 53.

[0274] The method of calculating N1 is described. The method of calculating N1 is described. First, using a dimension measuring instrument AMIC-701 manufactured by SOKIA, the arrangement and shape of all the first through holes 53A located in the fourth region M4 of the mask are measured and analyzed. Thus, the distance K35 is calculated with respect to all the first through holes 53A located in the fourth region M4 of the mask. Also, the arrangement and shape of the first through holes 53A located in the third region M3 of the mask are measured and analyzed. Thus, the 35th period P35 is calculated. Next, the distance K35 is divided by the 35th period P35. Thus, N1 related to all the first through holes 53A located in the fourth region M4 of the mask can be calculated. N2, N3, and N4 are also calculated in the same manner. N1, N2, N3, and N4 can also be calculated based on a design drawing or design values used to manufacture the mask.

[0275] Next, the positional relationship between the first mask 50A and the second mask 50B is described. Figure 18 is a plan view showing the mask stack 55. The mask stack 55 has two or more masks 50 stacked. Figure 18 The mask stack 55 shown has the first mask 50A and the second mask 50B stacked.

[0276] In the mask stack 55, the calibration marks 50M of each mask 50A to 50B can be coincident. Alternatively, each mask 50A to 50B can be stacked based on the arrangement of the units 52 of each mask 50A to 50B. Alternatively, each mask 50A to 50B can be stacked based on the arrangement of the through holes 53A to 53B and the shield regions 54A to 54B of each mask 50A to 50B. When the masks 50A to 50B are stacked, tension can or can not be applied to each mask 50A to 50B.

[0277] In addition, a drawing of a state in which two or more masks 50 are stacked can be obtained by superimposing the image data of each mask 50. For example, first, using a photographing device, image data related to the outline of each through hole 53A to 53B of each mask 50A to 50B is obtained. Next, using an image processing device, the image data of each mask 50A to 50B is superimposed. Thus, a drawing of a state in which two or more masks 50 are stacked can be obtained. Figure 18Such a figure. At the time of taking image data, tension can be applied to each mask 50A to 50B, or tension can not be applied. For a figure of a state in which 2 or more masks 50 are overlapped, a design figure for manufacturing each mask 50A to 50C can be overlapped to obtain.

[0278] As Figure 18 illustrated, the mask stack 55 has a through region 55A, an overlapping region 58, and a hole overlapping region 59.

[0279] The through region 55A contains at least 1 of the through holes 53 of the masks 50 included in the mask stack 55 in plan view. In Figure 18 the example illustrated, the through region 55A contains at least 1 of the through holes 53A to 53B of each mask 50A to 50B. That is, the through region 55A overlaps at least any one of the through holes 53A to 53B of each mask 50A to 50B in plan view. Therefore, in the vapor deposition process, at least 1 layer of the second electrode 140 is formed in a region of the substrate 110 corresponding to the through region 55A.

[0280] The hole overlapping region 59 is a region in which the through holes 53 of 2 or more masks 50 overlap in plan view. That is, the hole overlapping region 59 contains at least 2 of the through holes 53 of 2 or more masks 50 included in the mask stack 55 in plan view. In Figure 18 the example illustrated, the hole overlapping region 59 is a region in which the first through hole 53A and the second through hole 53B overlap in plan view. That is, the hole overlapping region 59 contains the first through hole 53A and the second through hole 53B. Therefore, in the vapor deposition process, at least 2 layers of the second electrode 140 are formed in a region of the substrate 110 corresponding to the hole overlapping region 59.

[0281] The overlapping region 58 is a region in which all of the shielding regions 54 of each mask 50 overlap in plan view. That is, the overlapping region 58 contains all of the shielding regions 54 of each mask 50 in plan view. In other words, the overlapping region 58 does not overlap with any of the through holes 53 of each mask in plan view. In Figure 18 the example illustrated, the overlapping region 58 is a region in which the first shielding region 54A and the second shielding region 54B overlap in plan view. That is, the overlapping region 58 contains the first shielding region 54A and the second shielding region 54B. Therefore, in the vapor deposition process, the second electrode 140 is not formed in a region of the substrate 110 corresponding to the hole overlapping region 59. That is, in the vapor deposition process, a transmission region 104 is formed in a region of the substrate 110 corresponding to the overlapping region 58.

[0282] When viewed from above, the mask layer stack 55 has a mask first region Ml and a mask second region M2. The mask first region Ml corresponds to the first display region 101 of the organic device 100. The mask second region M2 corresponds to the second display region 102 of the organic device 100.

[0283] In the mask first region Ml, the through regions 55A have a first aperture ratio. The first aperture ratio is calculated by dividing the sum of the areas of the through regions 55A located in the mask first region Ml by the area of the mask first region Ml. In the mask second region M2, the through regions 55A have a second aperture ratio. The second aperture ratio is calculated by dividing the sum of the areas of the through regions 55A located in the mask second region M2 by the area of the mask second region M2. The second aperture ratio can be smaller than the first aperture ratio.

[0284] The ratio of the second aperture ratio to the first aperture ratio can be, for example, 0.2 or more, 0.3 or more, or 0.4 or more. The ratio of the second aperture ratio to the first aperture ratio can be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the second aperture ratio to the first aperture ratio can be defined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the second aperture ratio to the first aperture ratio can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the second aperture ratio to the first aperture ratio can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the second aperture ratio to the first aperture ratio can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the second aperture ratio to the first aperture ratio can be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0285] In the mask first region M1, the first through holes 53A and the second through holes 53B can be alternately arranged in the mask first direction D1. The first through holes 53A can be connected with the second through holes 53B in the mask first direction D1. In this case, in the mask first region M1, the hole overlapping regions 59 can be arranged in the 17th period P17 along the mask first direction D1.

[0286] In the mask first region M1, the first through holes 53A and the second through holes 53B can be alternately arranged in the mask second direction D2. The first through holes 53A can be connected with the second through holes 53B in the mask second direction D2. In this case, in the mask first region M1, the hole overlapping regions 59 can be arranged in the 27th period P27 along the mask second direction D2.

[0287] The area of the hole overlapping region 59 can be smaller than the area of the first through-hole 53A. The ratio of the area of the hole overlapping region 59 to the area of the first through-hole 53A can be, for example, 0.02 or more, 0.05 or more, or 0.10 or more. The ratio of the area of the hole overlapping region 59 to the area of the first through-hole 53A can be, for example, 0.20 or less, 0.30 or less, or 0.40 or less. The range of the ratio of the area of the hole overlapping region 59 to the area of the first through-hole 53A can be defined by a first group consisting of 0.01, 0.05, and 0.10 and / or a second group consisting of 0.20, 0.30, and 0.40. The range of the ratio of the area of the hole overlapping region 59 to the area of the first through-hole 53A can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the area of the hole overlapping region 59 to the area of the first through-hole 53A can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the area of the hole overlapping region 59 to the area of the first through-hole 53A can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the area of the hole overlapping region 59 to the area of the first through-hole 53A can be 0.01 or more and 0.40 or less, 0.01 or more and 0.30 or less, 0.01 or more and 0.20 or less, 0.01 or more and 0.10 or less, 0.01 or more and 0.05 or less, 0.05 or more and 0.40 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, 0.20 or more and 0.40 or less, 0.20 or more and 0.30 or less, or 0.30 or more and 0.40 or less.

[0288] The area of the hole overlapping region 59 can be smaller than the area of the second through-hole 53B. As the range of the ratio of the area of the hole overlapping region 59 to the area of the second through-hole 53B, the range of the "ratio of the area of the hole overlapping region 59 to the area of the first through-hole 53A" described above can be adopted.

[0289] As shown in FIG. 6, in the mask second region M2, the overlapping regions 58 can be irregularly arranged. Thus, the transmission regions 104 corresponding to the overlapping regions 58 can have irregular shapes. Figure 18 Examples of irregular shapes will be described. As shown in FIG. 7, the overlapping regions 58 can be arranged in a zigzag manner in the mask second region M2. Thus, the transmission regions 104 corresponding to the overlapping regions 58 can have irregular shapes.

[0290] Figure 19 ​As shown, the overlapping region 58 may include a first overlapping region 581 and a second overlapping region 582. The second overlapping region 582 is adjacent to the first overlapping region 581 across the through region 55A. The first overlapping region 581 has a first mask shape. The second overlapping region 582 may have a second mask shape different from the first mask shape. The specific differences between the first mask shape and the second mask shape are arbitrary. For example, the area of ​​the second mask shape may be different from the area of ​​the first mask shape.

[0291] "First overlapping region 581" may not be a term referring to a specific overlapping region 58. For example, as Figure 18 As shown, with Figure 19 Different overlapping regions 58 can correspond to the first overlapping region 581. Figure 18 The shapes of the through region 55A and the overlapping region 58 are similar to Figure 19 The through region 55A and the overlapping region 58 have the same shape. Figure 19 In the example, there also exists an overlapping region 58 that is adjacent to the first overlapping region 581 across a through region 55A and has a different shape from the first overlapping region 581. That is, in Figure 18 In the example, in the relationship with the first overlapping region 581, there is also an overlapping region 58 that conforms to the second overlapping region 582. Thus, when two overlapping regions 58 adjacent to each other across the through region 55A have different shapes, one overlapping region 58 can be called the first overlapping region 581, and the other overlapping region 58 can be called the second overlapping region 582.

[0292] The mask second region M2 can have an 11th coincidence rate. The 11th coincidence rate is a percentage of a total of the number of overlapping regions 58 with respect to the number of the 11th coincidences. The 11th coincidences are the number of overlapping regions 58 that can be referred to as the first overlapping regions 581 in relation to the second overlapping regions 582. The 11th coincidence rate can be, for example, 80% or more, 85% or more, or 90% or more. The 11th coincidence rate can be, for example, 95% or less, 97% or less, or 99% or less. The range of the 11th coincidence rate can be defined by a first group consisting of 80%, 85%, and 90% and / or a second group consisting of 95%, 97%, and 99%. The range of the 11th coincidence rate can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the 11th coincidence rate can be defined by a combination of any two of the values included in the first group described above. The range of the 11th coincidence rate can be defined by a combination of any two of the values included in the second group described above. For example, the 11th coincidence rate can be 80% or more and 99% or less, 80% or more and 97% or less, 80% or more and 95% or less, 80% or more and 90% or less, 80% or more and 85% or less, 85% or more and 99% or less, 85% or more and 97% or less, 85% or more and 95% or less, 85% or more and 90% or less, 90% or more and 99% or less, 90% or more and 97% or less, 90% or more and 95% or less, 95% or more and 99% or less, 95% or more and 97% or less, 97% or more and 99% or less.

[0293] As shown in Figure 19 and Figure 18 The overlapping regions 58 can include a third overlapping region 583. The third overlapping region 583 is adjacent to the first overlapping regions 581 and the second overlapping regions 582 across the through region 55A. The third overlapping region 583 can have a third mask shape different from the first mask shape and the second mask shape. For example, the area of the third mask shape can be different from the area of the first mask shape and the area of the second mask shape.

[0294] The mask second region M2 can have a 12th coincidence rate. The 12th coincidence rate is a percentage of a total of the number of overlapping regions 58 with respect to the number of the 12th coincidences. The 12th coincidences are the number of overlapping regions 58 that can be referred to as the first overlapping regions 581 in relation to the second overlapping regions 582 and the third overlapping regions 583. As the range of the 12th coincidence rate, the range of the 11th coincidence rate described above can be adopted.

[0295] AsFigure 19 and Figure 18 As illustrated in FIG. 6, the overlapping regions 58 can include a fourth overlapping region 584. The fourth overlapping region 584 is adjacent to the first overlapping region 581 and the second overlapping region 582 across the through region 55A. The fourth overlapping region 584 can have a fourth mask shape different from the first mask shape and the second mask shape. For example, the area of the fourth mask shape can be different from the area of the first mask shape and the area of the second mask shape. The fourth mask shape can also be different from the third mask shape.

[0296] The mask second region M2 can have a thirteenth coincidence rate. The thirteenth coincidence rate is a percentage of a thirteenth coincidence number with respect to a total of the number of the overlapping regions 58. The thirteenth coincidence number is the number of the overlapping regions 58 that can be called the first overlapping region 581 in relation to the second overlapping region 582, the third overlapping region 583, and the fourth overlapping region 584. As a range of the thirteenth coincidence rate, the above-described range of the eleventh coincidence rate can be employed.

[0297] As illustrated in FIG. 6, the overlapping regions 58 can include a fourth overlapping region 584. The fourth overlapping region 584 is adjacent to the first overlapping region 581 and the second overlapping region 582 across the through region 55A. The fourth overlapping region 584 can have a fourth mask shape different from the first mask shape and the second mask shape. For example, the area of the fourth mask shape can be different from the area of the first mask shape and the area of the second mask shape. The fourth mask shape can also be different from the third mask shape. Figure 19 and Figure 18 As illustrated in FIG. 6, the overlapping regions 58 can include a fifth overlapping region 585. The fifth overlapping region 585 is adjacent to the first overlapping region 581 across the through region 55A. The fifth overlapping region 585 can be adjacent to the fourth overlapping region 584 across the through region 55A. The fifth overlapping region 585 can have a fifth mask shape different from the first mask shape. For example, the area of the fifth mask shape can be different from the area of the first mask shape. The fifth mask shape can also be different from the second mask shape, the third mask shape, and the fourth mask shape.

[0298] The mask second region M2 can have a fourteenth coincidence rate. The fourteenth coincidence rate is a percentage of a fourteenth coincidence number with respect to a total of the number of the overlapping regions 58. The fourteenth coincidence number is the number of the overlapping regions 58 that can be called the first overlapping region 581 in relation to the second overlapping region 582, the third overlapping region 583, the fourth overlapping region 584, and the fifth overlapping region 585. As a range of the fourteenth coincidence rate, the above-described range of the eleventh coincidence rate can be employed.

[0299] As illustrated in FIG. 6, the overlapping regions 58 can include a fourth overlapping region 584. The fourth overlapping region 584 is adjacent to the first overlapping region 581 and the second overlapping region 582 across the through region 55A. The fourth overlapping region 584 can have a fourth mask shape different from the first mask shape and the second mask shape. For example, the area of the fourth mask shape can be different from the area of the first mask shape and the area of the second mask shape. The fourth mask shape can also be different from the third mask shape. Figure 19 and Figure 18 As illustrated in FIG. 6, the overlapping regions 58 can include a sixth overlapping region 586. The sixth overlapping region 586 is adjacent to the first overlapping region 581 across the through region 55A. The sixth overlapping region 586 can have a sixth mask shape different from the first mask shape. For example, the area of the sixth mask shape can be different from the area of the first mask shape. The sixth mask shape can also be different from the second mask shape, the third mask shape, the fourth mask shape, and the fifth mask shape.

[0300] The mask second region M2 can have a 15th coincidence rate. The 15th coincidence rate is a percentage of a 15th coincidence number with respect to a total of the number of the overlapping regions 58. The 15th coincidence number is the number of the overlapping regions 58 that can be called the first overlapping region 581 in relation to the second overlapping region 582, the third overlapping region 583, the fourth overlapping region 584, the fifth overlapping region 585, and the sixth overlapping region 586. As a range of the 15th coincidence rate, the above-described range of the 11th coincidence rate can be adopted.

[0301] Next, the through region 55A will be described. As shown in FIG. 6, the through region 55A can include a connection end 55Z. The connection end 55Z connects the through region 55A of the mask second region M2 and the through region 55A of the mask first region Ml. The connection end 55Z is the through region 55A at the boundary of the mask first region Ml and the mask second region M2. The connection end 55Z can include a first connection end, a second connection end, a third connection end, and a fourth connection end, like the electrode connection end 140Z of the second electrode 140 described above. The first connection end is at the boundary on one side in the mask first direction Dl. The second connection end is at the boundary on the other side in the mask first direction Dl. The third connection end is at the boundary on one side in the mask second direction D2. The fourth connection end is at the boundary on the other side in the mask second direction D2. Figure 19 Figure 20 As with the second electrode 140Y of the second display region 102, the through region 55A of the mask second region M2 can include a region that is continuous from one connection end to another connection end. For example, the through region 55A can include the following regions. Each region can be repeated with each other. The through region 55A can include all of the following types of regions. The through region 55A can also include a part of the following types of regions.

[0302] • a region that is continuous from the first connection end to the second connection end

[0303] • a region that is continuous from the first connection end to the third connection end

[0304] • a region that is continuous from the first connection end to the fourth connection end

[0305] • a region that is continuous from the second connection end to the third connection end

[0306] • a region that is continuous from the second connection end to the fourth connection end

[0307] • a region that is continuous from the third connection end to the fourth connection end

[0308] • a region that is continuous from the third connection end to the fourth connection end

[0309] As shown in FIG. 6, the through region 55A of the mask second region M2 can include a region that is continuous from one connection end to another connection end. For example, the through region 55A can include the following regions. Each region can be repeated with each other. The through region 55A can include all of the following types of regions. The through region 55A can also include a part of the following types of regions. Figure 8 Figure 7 ​​As shown, the through region 55A of the mask second region M2 can include a trunk region 56 and a branch region 57. The trunk region 56 constitutes a path that is continuous from one connection end to another connection end. The branch region 57 is connected to the trunk region 56.

[0310] Figure 21 FIG. 7 is a plan view showing an example of the branch region 57. The branch region 57 can be a first branch region 57A or a second branch region 57B.

[0311] The first branch region 57A includes two first region ends 571 and one second region end 572. The first region end 571 is an end of the branch region 57 in a mask fifth direction D5. The two first region ends 571 are opposed in a direction perpendicular to the mask fifth direction D5. The mask fifth direction D5 can be parallel to the mask first direction Dl. Although not shown, the mask fifth direction D5 can not be parallel to the mask first direction Dl. The second region end 572 is an end of the branch region 57 in a mask sixth direction D6. The mask sixth direction D6 intersects the mask fifth direction D5. The mask sixth direction D6 can be perpendicular to the mask fifth direction D5. The two first region ends 571 and the one second region end 572 are connected to the overlap region 58.

[0312] The second branch region 57B includes one first region end 571 and two second region ends 572. The two second region ends 572 are opposed in a direction perpendicular to the mask sixth direction D6. The one first region end 571 and the two second region ends 572 are connected to the overlap region 58.

[0313] The width W55 of the 1st region end 571 can have a certain ratio with respect to the 27th period P27. The ratio of the width W55 to the 27th period P27 can be 0.4 or more, 0.6 or more, or 0.8 or more, for example. The ratio of the width W55 to the 27th period P27 can be 1.2 or less, 1.4 or less, or 1.6 or less, for example. The range of the ratio of the width W55 to the 27th period P27 can be defined by a 1st group consisting of 0.4, 0.6, and 0.8 and / or a 2nd group consisting of 1.2, 1.4, and 1.6. The range of the ratio of the width W55 to the 27th period P27 can be defined by a combination of any one of the values included in the 1st group described above and any one of the values included in the 2nd group described above. The range of the ratio of the width W55 to the 27th period P27 can be defined by a combination of any two of the values included in the 1st group described above. The range of the ratio of the width W55 to the 27th period P27 can be defined by a combination of any two of the values included in the 2nd group described above. For example, the ratio of the width W55 to the 27th period P27 can be 0.4 or more and 1.6 or less, 0.4 or more and 1.4 or less, 0.4 or more and 1.2 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.6 or less, 0.6 or more and 1.6 or less, 0.6 or more and 1.4 or less, 0.6 or more and 1.2 or less, 0.6 or more and 0.8 or less, 0.8 or more and 1.6 or less, 0.8 or more and 1.4 or less, 0.8 or more and 1.2 or less, 1.2 or more and 1.6 or less, 1.2 or more and 1.4 or less, or 1.4 or more and 1.6 or less.

[0314] The width W65 of the 2nd region end 572 can have a certain ratio with respect to the 17th period P17. The ratio of the width W65 to the 17th period P17 can be, for example, 0.4 or more, 0.6 or more, or 0.8 or more. The ratio of the width W65 to the 17th period P17 can be, for example, 1.2 or less, 1.4 or less, or 1.6 or less. The range of the ratio of the width W65 to the 17th period P17 can be defined by a 1st group consisting of 0.4, 0.6, and 0.8 and / or a 2nd group consisting of 1.2, 1.4, and 1.6. The range of the ratio of the width W65 to the 17th period P17 can be defined by a combination of any one of the values included in the above 1st group and any one of the values included in the above 2nd group. The range of the ratio of the width W65 to the 17th period P17 can be defined by a combination of any two of the values included in the above 1st group. The range of the ratio of the width W65 to the 17th period P17 can be defined by a combination of any two of the values included in the above 2nd group. For example, the ratio of the width W65 to the 17th period P17 can be 0.4 or more and 1.6 or less, 0.4 or more and 1.4 or less, 0.4 or more and 1.2 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.6 or less, 0.6 or more and 1.6 or less, 0.6 or more and 1.4 or less, 0.6 or more and 1.2 or less, 0.6 or more and 0.8 or less, 0.8 or more and 1.6 or less, 0.8 or more and 1.4 or less, 0.8 or more and 1.2 or less, 1.2 or more and 1.6 or less, 1.2 or more and 1.4 or less, or 1.4 or more and 1.6 or less.

[0315] By including the branch region 57 in the through region 55A, it is easy to irregularly arrange the through region 55A. Therefore, it is possible to irregularly form the 2nd electrode 140Y. Thus, it is possible to further suppress the mutual enhancement of light diffracted when passing through the transmission region 104.

[0316] Next, an example of a method of manufacturing the organic device 100 will be described.

[0317] First, a substrate 110 on which the 1st electrode 120 is formed is prepared. The 1st electrode 120 is formed, for example, by forming a conductive layer constituting the 1st electrode 120 on the substrate 110 by a sputtering method or the like, and then patterning the conductive layer by a photolithography method or the like. The insulating layer 160 located between two adjacent 1st electrodes 120 in plan view can be formed on the substrate 110.

[0318] Next, as shown in FIG. 6A, the 2nd electrode 140Y is formed on the substrate 110 on which the 1st electrode 120 is formed. The 2nd electrode 140Y is formed, for example, by forming a conductive layer constituting the 2nd electrode 140Y on the substrate 110 by a sputtering method or the like, and then patterning the conductive layer by a photolithography method or the like. Figure 21As shown, the organic layer 130 including the first organic layer 130A and the second organic layer 130B is formed on the first electrode 120. The first organic layer 130A can be formed, for example, by an evaporation method using a mask having a through-hole corresponding to the first organic layer 130A. For example, by causing an organic material or the like to be evaporated onto the first electrode 120 corresponding to the first organic layer 130A via the mask, the first organic layer 130A can be formed. The second organic layer 130B can also be formed by an evaporation method using a mask having a through-hole corresponding to the second organic layer 130B.

[0319] Next, the second electrode formation process can be performed. In the second electrode formation process, the second electrode 140 is formed on the organic layer 130 using the mask set described above. First, a process of forming the first layer 140A of the second electrode 140 by an evaporation method using the first mask 50A can be performed. For example, a conductive material such as metal or the like is evaporated on the organic layer 130 or the like via the first mask 50A. Thereby, the first layer 140A can be formed. Next, a process of forming the second layer 140B of the second electrode 140 by an evaporation method using the second mask 50B can be performed. For example, a conductive material such as metal or the like is evaporated on the organic layer 130 or the like via the second mask 50B. Thereby, the second layer 140B can be formed. In this way, as shown, the second electrode 140 including the first layer 140A and the second layer 140B can be formed. Figure 3

[0320] Further, the order in which the first layer 140A and the second layer 140B are formed is not particularly limited. For example, the evaporation process can also be performed in the order of the second layer 140B, the first layer 140A.

[0321] Effects of the mode of the present disclosure are summarized.

[0322] In a case where the second display region 102 of the organic device 100 includes the transmissive region 104, light reaching the organic device 100 can pass through the transmissive region 104 to reach an optical member or the like on the back surface side of the substrate. Therefore, the second display region 102 can detect light and display an image. Therefore, the function of a sensor such as a camera, a fingerprint sensor, or the like can be implemented in the second display region 102.

[0323] In a case where the shape of the transmissive region 104 is not fixed, light diffracted when passing through the transmissive region 104 can be suppressed from mutually enhancing. Therefore, diffracted light having a high intensity can be suppressed from being incident on the sensor. Thereby, for example, blurring of an image generated by the sensor can be suppressed.

[0324] Figure 22 is a plan view showing an example of the second display region 102 of the reference mode enlarged. In the example shown in FIG. 8A, the transmissive region 104 is formed in the second display region 102. The transmissive region 104 is formed in the second display region 102, for example, by performing a process of forming the second electrode 140 on the organic layer 130 using the mask set described above. Figure 22 ​In the example shown, the shape of the transmission region 104 is constant. Specifically, the transmission region 104 is square when viewed from above. In this case, light that diffracts when passing through the transmission region 104 sometimes mutually reinforces in a particular direction. Thus, there are cases in which the image generated by the sensor provided in the second display region 102 becomes blurred.

[0325] In contrast, according to the above-described Figure 3 example, since the shape of the transmission region 104 is not constant, it is possible to suppress light that diffracts when passing through the transmission region 104 from mutually reinforcing. Thus, it is possible to suppress diffracted light having a high intensity from being incident on the sensor. Thereby, for example, it is possible to suppress the image generated by the sensor from becoming blurred.

[0326] In addition, various modifications can be made to the above-described one embodiment. Hereinafter, other embodiments will be described as needed with reference to the drawings. In the following description and the drawings used in the following description, for portions that can be configured identically to the above-described one embodiment, the same reference numerals are used as those used for the corresponding portions in the above-described one embodiment, and redundant descriptions are omitted. In addition, in cases where the effects obtained in the above-described one embodiment are obviously obtained in other embodiments as well, descriptions thereof are sometimes omitted.

[0327] In the above-described one embodiment, an example in which the organic layer 130 of the first display region 101 and the organic layer 130 of the second display region 102 have the same size is shown. However, the organic layer 130 of the second display region 102 can have a different size from the organic layer 130 of the first display region 101. For example, as shown in FIG. 14, the organic layer 130 of the second display region 102 can have a larger size than the organic layer 130 of the first display region 101. Figure 7

[0328] Figure 22 The first display region 101 shown has the same structure as the above-described first display region 101 shown in FIGS. 1A and 1B. Specifically, in the first display region 101, the organic layer 130 including the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C is arranged in the element first direction G1 and the element second direction G2. The second electrode 140X includes the first layer 140A, the second layer 140B, and the third layer 140C. One first layer 140A or one second layer 140B overlaps with one organic layer 130 when viewed from above. Figure 3 Figure 24

[0329] ​​​In the second display region 102, the second electrode 140Y can include the first layer 140A, the second layer 140B, and the third layer 140C. The first layer 140A, the second layer 140B, and the third layer 140C are formed by an evaporation method using the first mask 50A, the second mask 50B, and the third mask 50C, which will be described later, respectively.

[0330] The third layer 140C can overlap with the organic layer 130 including the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C. The first layer 140A and the second layer 140B can not overlap with the organic layer 130.

[0331] In Figure 25 In the example, the second electrode 140Y can be irregularly arranged. Thus, the transmission region 104 surrounded by the second electrode 140Y can have an irregular shape. For example, the transmission region 104 can include the first transmission region 1041 and the second transmission region 1042, like the example of Figure 26 In the example, the second electrode 140Y can be irregularly arranged. Thus, the transmission region 104 surrounded by the second electrode 140Y can have an irregular shape. For example, the transmission region 104 can include the first transmission region 1041 and the second transmission region 1042, like the example of

[0332] Figure 24 FIG. 1A is a plan view illustrating an example of the first mask 50A. Figure 16 FIG. 2A is a plan view illustrating an example of the second mask 50B. Figure 17 FIG. 3A is a plan view illustrating an example of the third mask 50C.

[0333] As illustrated in Figure 26 The first mask 50A includes the first through-hole 53A and the first shield region 54A. Like the example illustrated in Figure 23 In the mask fourth region M4, a distance K35 between the center points of two first through-holes 53A adjacent in the mask third direction D3 can be N1 times the 35th period P35. In the mask fourth region M4, a distance K45 between the center points of two first through-holes 53A adjacent in the mask fourth direction D4 can be N2 times the 45th period P45.

[0334] As illustrated in Figure 18 The second mask 50B includes the second through-hole 53B and the second shield region 54B. Like the example illustrated in Figure 18The example shown is the same as in the mask third region M3, the distance K36 between the center points of the two second through holes 53B adjacent in the mask third direction D3 in the mask fourth region M4 can be N3 times the 36th period P36. In the mask fourth region M4, the distance K46 between the center points of the two second through holes 53B adjacent in the mask fourth direction D4 can be N4 times the 46th period P46.

[0335] As shown, the third mask 50C includes a mask third region M3 and a mask fourth region M4. The third mask 50C can have a third through hole 53C and a third shield region 54C in the mask fourth region M4. The third through hole 53C can be arranged in the 18th period P18 in the mask first direction D1. The third through hole 53C can be arranged in the 28th period P28 in the mask second direction D2. The third mask 50C includes the third shield region 54C in the mask third region M3. The third mask 50C can not include the third through hole 53C in the mask third region M3. Figure 22

[0336] Figure 27 is a plan view showing the mask stack 55. The mask stack 55 has the first mask 50A, the second mask 50B, and the third mask 50C overlapping. In the mask stack 55, the first through hole 53A and the second through hole 53B can be connected to the third through hole 53C in the mask first direction D1. The first through hole 53A and the second through hole 53B can be connected to the third through hole 53C in the mask second direction D2.

[0337] The mask stack 55 has a through region 55A, an overlapping region 58, and a hole overlapping region 59. As with the example of Figure 27 In the mask second region M2, the overlapping region 58 can be irregularly arranged, as with the example of Figure 27 As with the example of the overlapping region 58, the overlapping region 58 can include a first overlapping region 581 and a second overlapping region 582. The overlapping region 58 can include a third overlapping region 583. The overlapping region 58 can include a fourth overlapping region 584. The overlapping region 58 can include a fifth overlapping region 585. The overlapping region 58 can include a sixth overlapping region 586.

[0338] ​In the second electrode forming step, the second electrode 140 is formed using a mask set including the first mask 50A, the second mask 50B, and the third mask 50C. First, a process of forming the first layer 140A of the second electrode 140 by an evaporation method using the first mask 50A can be performed. Next, a process of forming the second layer 140B of the second electrode 140 by an evaporation method using the second mask 50B can be performed. Next, the third layer 140C of the second electrode 140 can be formed by an evaporation method using the third mask 50C. Thus, as shown in FIG. 1 1, the second electrode 140 including the first layer 140A, the second layer 140B, and the third layer 140C can be formed. Figure 3

[0339] In the above-described embodiment, an example in which the organic layer 130 including the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C overlaps one layer of the second electrode 140 in plan view is shown. However, the organic layer 130 can overlap two or more layers of the second electrode 140. For example, as shown in FIG. 12, the first organic layer 130A and the third organic layer 130C can overlap one layer of the second electrode 140, and the second organic layer 130B can overlap another layer of the second electrode 140. Figure 29

[0340] Figure 30 As shown in FIG. 13, the second electrode 140 can include the first layer 140A and the second layer 140B. The first layer 140A can include the eleventh layer 140A1 and the twelfth layer 140A2. The twelfth layer 140A2 can have a larger area than the eleventh layer 140A1. The second layer 140B can include the twenty-first layer 140B1 and the twenty-second layer 140B2. The twenty-second layer 140B2 can have a larger area than the twenty-first layer 140B1.

[0341] The eleventh layer 140A1 can be connected to the twenty-second layer 140B2 in the element first direction G1. The eleventh layer 140A1 can be connected to the twenty-first layer 140B1 in the element second direction G2. The twenty-first layer 140B1 can be connected to the twelfth layer 140A2 in the element first direction G1. The twenty-second layer 140B2 can be connected to the twelfth layer 140A2 in the element second direction G2.

[0342] One first organic layer 130A and one third organic layer 130C can overlap one twelfth layer 140A2 or one twenty-second layer 140B2 in plan view. One second organic layer 130B can overlap one eleventh layer 140A1 or one twenty-first layer 140B1 in plan view.

[0343] In the above-described embodiment, an example in which the organic layer 130 including the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C overlaps one layer of the second electrode 140 in plan view is shown. However, the organic layer 130 can overlap two or more layers of the second electrode 140. For example, as shown in FIG. 12, the first organic layer 130A and the third organic layer 130C can overlap one layer of the second electrode 140, and the second organic layer 130B can overlap another layer of the second electrode 140. Figure 29 ​​In the example, the second electrode 140Y may be arranged irregularly. Thus, the transmissive region 104 surrounded by the second electrode 140Y can have an irregular shape. For example, the same as Figure 16 the example, the transmissive region 104 may include a first transmissive region 1041 and a second transmissive region 1042. The transmissive region 104 may include a third transmissive region 1043. The transmissive region 104 may include a fourth transmissive region 1044. The transmissive region 104 may include a fifth transmissive region 1045. The transmissive region 104 may include a sixth transmissive region 1046.

[0344] Figure 30 is a top view showing an example of the first mask 50A. Figure 17 is a top view showing an example of the second mask 50B.

[0345] As Figure 28 shown, the first mask 50A includes a first through hole 53A and a first shielding region 54A. The same as Figure 18 the example shown, in the mask fourth region M4, the distance K35 between the centers of two adjacent first through holes 53A in the mask third direction D3 may be N1 times the 35th period P35. In the mask fourth region M4, the distance K45 between the centers of two adjacent first through holes 53A in the mask fourth direction D4 may be N2 times the 45th period P45.

[0346] As Figure 18 shown, the second mask 50B includes a second through hole 53B and a second shielding region 54B. The same as Figure 38 the example shown, in the mask fourth region M4, the distance K36 between the centers of two adjacent second through holes 53B in the mask third direction D3 may be N3 times the 36th period P36. In the mask fourth region M4, the distance K46 between the centers of two adjacent second through holes 53B in the mask fourth direction D4 may be N4 times the 46th period P46.

[0347] Figure 39 is a top view showing the mask stack 55. The mask stack 55 includes the overlapping first mask 50A and second mask 50B.

[0348] The mask stack 55 includes a through region 55A, an overlapping region 58, and a hole overlapping region 59. The same as Figure 38 the example, in the mask second region M2, the overlapping region 58 may be arranged irregularly. Thus, the transmissive region 104 corresponding to the overlapping region 58 can have an irregular shape. For example, the same as Figure 39Similarly, overlapping region 58 can contain first overlapping region 581 and second overlapping region 582. Overlapping region 58 can contain third overlapping region 583. Overlapping region 58 can contain fourth overlapping region 584. Overlapping region 58 can contain fifth overlapping region 585. Overlapping region 58 can contain sixth overlapping region 586.

[0349] Reference Figure 38 and Figure 38 An example of organic device 100 will be described.

[0350] Figure 39 This is a top view showing an example of the organic device 100. The element 115 located in the first display area 101 is also referred to as element 115X. The element 115 located in the second display area 102 is also referred to as element 115Y.

[0351] In the first display area 101, the organic layer of element 115X can be arranged along the first direction G1 of the element with an 11th period P11. In the second display area 102, the organic layer of element 115Y can be arranged along the first direction G1 of the element with a 12th period P12. The 12th period P12 can be the same as the 11th period P11. By making the 12th period P12 the same as the 11th period P11, it is possible to suppress the visual difference between the first display area 101 and the second display area 102.

[0352] In the first display area 101, the organic layer of element 115X can be arranged along the second direction G2 of the element with a 21st period P21. In the second display area 102, the organic layer of element 115Y can be arranged along the second direction G2 of the element with a 22nd period P22. The 22nd period P22 can be the same as the 21st period P21. By making the 22nd period P22 the same as the 21st period P21, it is possible to suppress the visual difference between the first display area 101 and the second display area 102.

[0353] Figure 39 It is shown Figure 39 The second display area 102 is a top view of an example. Figure 39 In the diagram, the first electrode 120, covered by the second electrode 140, is indicated by a dashed line. The first electrode 120 may include a first A electrode 120A, a first B electrode 120B, and a first C electrode 120C. The first A electrode 120A overlaps with the first organic layer as described above when viewed from above. The first B electrode 120B overlaps with the second organic layer as described above when viewed from above. The first C electrode 120C overlaps with the third organic layer as described from above when viewed from above.

[0354] Component 115X may include at least one first A electrode 120A, at least one first B electrode 120B, and at least one first C electrode 120C. For example, component 115X may include one first A electrode 120A, one first B electrode 120B, and two first C electrodes 120C. The period of component 115X in the first direction G1 and the second direction G2 may be determined based on any period of the first A electrode 120A or the first B electrode 120B.

[0355] Element 115Y may also include, like element 115X, at least one first A electrode 120A, at least one first B electrode 120B, and at least one first C electrode 120C. For example, element 115Y may also include, like element 115X, one first A electrode 120A, one first B electrode 120B, and two first C electrodes 120C. The period of element 115Y in the first direction G1 and the second direction G2 may be determined based on any period of the first A electrode 120A or the first B electrode 120B.

[0356] The area of ​​element 115Y in the second display area 102 can be smaller than the area of ​​element 115X in the first display area 101. For example, the area of ​​the organic layer of element 115Y in the second display area 102 can be smaller than the area of ​​the organic layer of element 115X in the first display area 101. For example, the area of ​​the first electrode of element 115Y in the second display area 102 can be smaller than the area of ​​the first electrode of element 115X in the first display area 101. By making the area of ​​element 115Y smaller than the area of ​​element 115X, thus, as Figure 39 As shown, a first transmissive region 1041, a second transmissive region 1042, a third transmissive region 1043, and other transmissive regions 104 can be formed in the second display region 102. Figure 39 In the example shown, the area of ​​the first electrode of element 115X is the sum of the areas of one first A electrode 120A, one first B electrode 120B, and two first C electrodes 120C. Figure 39 In the example shown, the area of ​​the first electrode of element 115Y is the sum of the areas of one first A electrode 120A, one first B electrode 120B, and two first C electrodes 120C.

[0357] The ratio of the area of the first electrode of the element 115Y to the area of the first electrode of the element 115X can be, for example, 0.1 or more, 0.2 or more, or 0.3 or more. The ratio of the area of the first electrode of the element 115Y to the area of the first electrode of the element 115X can be, for example, 0.5 or less, 0.7 or less, or 0.9 or less. The ratio of the area of the first electrode of the element 115Y to the area of the first electrode of the element 115X can be limited to a range by a first group consisting of 0.1, 0.2, and 0.3 and / or a second group consisting of 0.5, 0.7, and 0.9. The ratio of the area of the first electrode of the element 115Y to the area of the first electrode of the element 115X can be limited to a range by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The ratio of the area of the first electrode of the element 115Y to the area of the first electrode of the element 115X can be limited to a range by a combination of any two of the values included in the first group described above. The ratio of the area of the first electrode of the element 115Y to the area of the first electrode of the element 115X can be limited to a range by a combination of any two of the values included in the second group described above. For example, the ratio of the area of the first electrode of the element 115Y to the area of the first electrode of the element 115X can be 0.1 or more and 0.9 or less, 0.1 or more and 0.7 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, 0.2 or more and 0.9 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.5 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.9 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.5 or less, 0.5 or more and 0.9 or less, 0.5 or more and 0.7 or less, or 0.7 or more and 0.9 or less.

[0358] The two transmission regions 104 having different shapes can be adjacent to each other with the first electrode 120 and the second electrode 140Y interposed therebetween in a direction in which the plurality of first electrodes 120 are regularly arranged. Figures 40 to 43 In the example shown, the plurality of first electrodes 120 are also regularly arranged in the element third direction G3 and the element fourth direction G4. In the example shown, Figure 40 In the example shown, in the element third direction G3, the first transmission region 1041 and the third transmission region 1043 are adjacent to each other with the first electrode 120 and the second electrode 140Y interposed therebetween. In the example shown, Figure 41 In the example shown, the element third direction G3 forms an angle of 45° with the element first direction G1 and the element second direction G2. In the example shown, Figure 41 In the example shown, the element fourth direction G4 is perpendicular to the element third direction G3.

[0359] Referring to Figure 42 An example of a method of forming the transmission region 104 will be described. Specifically, an example in which a suppression layer is formed on the substrate 110 before the process of forming the second electrode 140 will be described. The suppression layer has a characteristic of making it difficult for the conductive material constituting the second electrode 140 to adhere.

[0360] Figure 43 is a plan view showing an example of a mask 60 used to form the suppression layer. The mask 60 includes at least one unit 62. The unit 62 includes a through-hole 63 and a shield region 64. The mask 60 can include two or more units 62. One unit 62 can correspond to one display region of the organic EL display device, that is, one screen.

[0361] The mask 60 has a mask third region M3 and a mask fourth region M4, like the mask 50 described above. The mask third region M3 corresponds to the first display region 101 of the organic device 100. The mask fourth region M4 corresponds to the second display region 102 of the organic device 100.

[0362] The mask third region M3 includes the shield region 64. The mask third region M3 can not include the through-hole 63. That is, the entire region of the mask third region M3 can be composed of the shield region 64.

[0363] The mask fourth region M4 includes the through-hole 63 and the shield region 64. The through-hole 63 of the mask fourth region M4 corresponds to the transmission region 104. The shield region 64 can be irregularly arranged. Thus, the through-hole 63 surrounded by the shield region 64 can have an irregular shape. For example, the mask fourth region M4 can include two through-holes 63 having different shapes and adjacent with the shield region 64 therebetween. For example, the mask fourth region M4 can include a first through-hole to a sixth through-hole corresponding to the first transmission region 1041 to the sixth transmission region 1046 described above.

[0364] Figure 42 is a cross-sectional view showing an example of a suppression layer forming process of forming the suppression layer 170. The suppression layer forming process is performed after the process of forming the organic layer 130 and before the process of forming the second electrode 140.

[0365] The suppression layer forming process can include a process of evaporating a material of the suppression layer 170 onto the substrate 110 via the mask 60. As Figure 43 indicated, the suppression layer 170 is formed on the substrate 110 in a region overlapping with the through-hole 63.

[0366] Figure 44Fig. 6 is a plan view showing an example of a mask 50 used to form the second electrode 140. The mask 50 includes at least one unit 52. The unit 52 is composed of a through-hole 53. The unit 52 is surrounded by a shield region 54.

[0367] Figure 45 Fig. 7 is a sectional view showing an example of a process of forming the second electrode 140. The second electrode 140 is formed by causing the material of the second electrode 140 to be vapor-deposited to the substrate 110 through the mask 50. Figure 44 As described above, the suppression layer 170 has a property that the conductive material constituting the second electrode 140 is difficult to adhere. As shown in Fig. 7, it is possible to suppress the second electrode 140 from being formed on the suppression layer 170. Therefore, the region where the suppression layer 170 is formed can function as the transmission region 104. Figure 44

[0368] The suppression layer 170 has transparency. For example, the transmittance of the laminate including the substrate 110 and the suppression layer 170 is preferably 70% or more, and more preferably 80% or more. The transmittance of the laminate including the substrate 110 and the suppression layer 170 can be measured by the test method for total light transmittance of plastics - transparent materials according to JIS K7361-1.

[0369] The material of the suppression layer 170 can be a material of a nucleation inhibiting coating described in WO2017072678A1 or WO2019150327A1. For example, the material of the suppression layer 170 can include a low-molecular organic material and an organic polymer or the like. The organic material can be, for example, a polycyclic aromatic compound. The polycyclic aromatic compound includes an organic molecule including a core portion and at least one terminal portion bonded to the core portion. The organic molecule can contain one or a plurality of heteroatoms of nitrogen, sulfur, oxygen, phosphorus, aluminum, or the like. The number of terminal portions can be one or more, can be two or more, can be three or more, or can be four or more. In the case where the organic molecule includes two or more terminal portions, the two or more terminal portions can be the same or can be different.

[0370] The terminal portion can include a biphenyl portion represented by any of the following chemical structures (l-a), (l-b), and (l-c).

[0371] (l-a)

[0372]

[0373] (l-b)

[0374]

[0375] (l-c)​

[0376]

[0377] Substituents Raand Rbmay be independently selected from deuterium, fluorine, alkyl including C1-C4 alkyl, cycloalkyl, arylalkyl, silyl, aryl, heteroaryl, fluoroalkyl, and any combination thereof.

[0378] Referring to Figure 42 and Figure 45 An example of a method of forming the transmissive region 104 will be described. Specifically, an example in which the transmissive region 104 is formed by partially removing the second electrode 140 will be described.

[0379] Example 1 is a cross-sectional view illustrating an example of a process of forming the second electrode 140. Figure 31 The second electrode 140 is formed by, for example, evaporating a material of the second electrode 140 onto the substrate 110 via a mask 50 as illustrated in Figure 32 In this case, the second electrode 140 is formed over the entire region of the first display region 101 and the second display region 102.

[0380] After the process of forming the second electrode 140, a process of partially removing the second electrode 140 is performed. For example, as illustrated in Figure 33 laser light L is partially irradiated to the second electrode 140 of the second display region 102. The second electrode 140 irradiated with the laser light L is scattered, and thus the transmissive region 104 is formed.

[0381] Although not illustrated, the laser light L can be irradiated to the second electrode 140 via a laser mask. The laser mask includes a through-hole corresponding to the transmissive region 104.

[0382]

EMBODIMENT

[0383] Next, the embodiments of the present disclosure will be described more specifically by way of examples, but the embodiments of the present disclosure are not limited by the following examples as long as the gist of the present disclosure is not exceeded.

[0384] Figure 34

[0385] Diffracted light generated in light passing through the transmissive region 104 was verified by simulation.

[0386] The substrate 110 and the second electrode 140 illustrated in Figure 33 are designed. The second electrode 140 is irregularly arranged. Therefore, the transmissive region 104 surrounded by the second electrode 140 can have an irregular shape.

[0387] Based on Figure 34The intensity distribution of light passing through the transmission region 104 and reaching the screen 113 was calculated by simulation. First, light LI was made to enter the substrate 110 in the direction of the normal line of the substrate 110. Next, the diffraction of light by the second electrode 140 was calculated by simulation. Reference symbol L2 denotes light that proceeds straight without being diffracted and reaches the screen 113. Reference symbol Pc denotes the arrival point of light L3 on the screen 113. Reference symbol L3 denotes light that is diffracted by the second electrode 140. The wavelength of light LI was 550 nm. The distance between the second electrode 140 and the screen 113 was 5000 mm. The refraction of light by the substrate 110 was ignored.

[0388] The result of the simulation is shown in Example 2 and Figure 35 . The horizontal axis represents the distance from the point Pc. The vertical axis represents the intensity of light reaching the screen 113. Figure 36 is the result of simulation in the case where the transmittance of the second electrode 140 was set to 0%. Figure 37 is the result of simulation in the case where the transmittance of the second electrode 140 was set to 60%.

[0389] Figure 36

[0390] The substrate 110 and the second electrode 140 shown in Figure 37 were designed. The second electrode 140 was regularly arranged in a lattice shape. Therefore, the transmission region 104 surrounded by the second electrode 140 was a square.

[0391] The intensity distribution of light passing through the transmission region 104 and reaching the screen 113 was calculated by simulation. The result of the simulation is shown in Figure 33 and Figure 36 . Figure 34 is the result of simulation in the case where the transmittance of the second electrode 140 was set to 0%. Figure 37 is the result of simulation in the case where the transmittance of the second electrode 140 was set to 60%.

[0392] From the comparison between Example 3 and Figure 46 , and the comparison between Example 4 and Figure 47 , it is understood that by making the transmission region 104 have an irregular shape, it is possible to suppress the arrival of diffracted light L3 having a high intensity at the screen 113.

[0393] Example 5

[0394] The substrate 110 and the second electrode 140 shown in Figure 48The first A electrode 120A, the first B electrode 120B, the first C electrode 120C, and the second electrode 140 are shown. Multiple transmission regions 104 are all cross-shaped. The multiple transmission regions 104 are regularly arranged along the first direction G1 and the second direction G2 of the element.

[0395] Similar to Example 1, the intensity distribution of light passing through the transmission region 104 and reaching the screen 113 was calculated through simulation. The simulation settings are as follows.

[0396] • Transmittance of transmission region 104: 100%

[0397] • Transmittance of the second electrode 140: 60%

[0398] • Transmittance of electrode 1A 120A, electrode 1B 120B, and electrode 1C 120C: 0%

[0399] The maximum intensity of the diffracted light appearing in the intensity distribution is 9.5%. The intensity of the diffracted light is normalized by the intensity of the light at point Pc on screen 113.

[0400] Example 6

[0401] Designed Figure 49 The first A electrode 120A, the first B electrode 120B, the first C electrode 120C, and the second electrode 140 are shown. The period of element 115 in the first element direction G1 and the second element direction G2 is the same as in Example 3. The plurality of transmission regions 104 are all rectangular. The plurality of transmission regions 104 are regularly arranged along the first element direction G1 and the second element direction G2.

[0402] Similar to Example 3, the intensity distribution of light passing through transmission region 104 and reaching screen 113 was calculated through simulation. The maximum intensity of diffracted light appearing in the intensity distribution is 9.5%.

[0403] ​

[0404] Designed ​ The first A electrode 120A, the first B electrode 120B, the first C electrode 120C, and the second electrode 140 are shown. The period of element 115 in the first direction G1 and the second direction G2 is the same as in Example 3.

[0405] In Example 5, the second electrode 140Y is irregularly arranged. Therefore, the transmission region 104 surrounded by the second electrode 140Y has an irregular shape. The transmission region 104 is located between two adjacent elements 115 in the first direction G1 and between two adjacent elements 115 in the second direction G2. A portion of the transmission region 104 is circular. A portion of the transmission region 104 is quadrilateral. The quadrilateral portion of the transmission region 104 is connected to adjacent transmission regions 104.

[0406] Example 5 includes two adjacent circular transmission regions 104 on the third direction G3 of the element, separated by one element 115. Example 5 also includes two adjacent circular transmission regions 104 on the fourth direction G4 of the element, separated by one element 115. In Example 5, the angle between the third direction G3 of the element and the first and second directions G2 of the element is 45°. In Example 5, the fourth direction G4 of the element is perpendicular to the third direction G3. In Example 5, the probability that two circular transmission regions 104 are adjacent on the third direction G3 is 1 / 16. The probability is the ratio of the number of the second combination to the number of the first combination. The number of the first combination is the number of combinations of two adjacent transmission regions 104 on the third direction G3 or the fourth direction G4, separated by one element 115. The number of the second combination is the number of combinations of two circular transmission regions 104 that are adjacent to each other in the third direction G3 or the fourth direction G4 of the element, separated by one element 115.

[0407] Similar to Example 3, the intensity distribution of light passing through transmission region 104 and reaching screen 113 was calculated through simulation. The maximum intensity of diffracted light appearing in the intensity distribution is 5.5%.

[0408] ​

[0409] Designed ​ The first A electrode 120A, the first B electrode 120B, the first C electrode 120C, and the second electrode 140 are shown. The period of element 115 in the first direction G1 and the second direction G2 is the same as in Example 3.

[0410] In Example 6, the second electrode 140Y is also irregularly arranged, similar to that in Example 5. Therefore, the transmission region 104 surrounded by the second electrode 140Y has an irregular shape. The transmission region 104 is located between two adjacent elements 115 in the first direction G1 and between two adjacent elements 115 in the second direction G2. A portion of the transmission region 104 is circular. A portion of the transmission region 104 is quadrilateral. The quadrilateral portion of the transmission region 104 is connected to the adjacent transmission region 104.

[0411] Example 6 includes two circular transmission regions 104 adjacent to each other with one element 115 in the element third direction G3, as in the case of Example 5. Example 6 includes two circular transmission regions 104 adjacent to each other with one element 115 in the element fourth direction G4, as in the case of Example 5. In Example 5, the probability that two circular transmission regions 104 are adjacent to each other with one element 115 is 1 / 4.

[0412] As in the case of Example 3, the intensity distribution of the light passing through the transmission region 104 and reaching the screen 113 was calculated by simulation. The maximum value of the intensity of the diffracted light appearing in the intensity distribution was 5.3%.

Claims

1. An organic device, wherein the organic device comprises: a substrate; and a plurality of elements arranged along an in-plane direction of the substrate, a plurality of elements arranged along an element first direction and an element second direction perpendicular to the element first direction, the element comprises: a first electrode on the substrate; an organic layer on the first electrode; and a second electrode on the organic layer, the organic device comprises, when viewed along a normal direction of the substrate: a first display region including the second electrode having a first occupancy; and a second display region including the second electrode having a second occupancy smaller than the first occupancy, the second display region includes: the second electrode; and a transmissive region surrounded by the second electrode when viewed in plan, the transmissive region includes: a first transmissive region; a second transmissive region adjacent to the first transmissive region across the second electrode in the element first direction; and a third transmissive region adjacent to the first transmissive region across the second electrode in the element second direction, the first transmissive region has a first shape, the second transmissive region has a second shape different from the first shape, the third transmissive region has a third shape different from the first shape and the second shape.

2. The organic device according to claim 1, wherein an area of the first transmissive region is different from an area of the second transmissive region.

3. The organic device according to claim 1, wherein the transmissive region includes a fourth transmissive region adjacent to the first transmissive region and the second transmissive region across the second electrode, the fourth transmissive region has a fourth shape different from the first shape, the second shape, and the third shape.

4. The organic device according to any one of claims 1 to 3, wherein in 80% or more of the transmissive regions in the transmissive regions in the second display region, other transmissive regions having different shapes exist adjacently across the second electrode.

5. The organic device according to any one of claims 1 to 3, wherein the second display region has a first breakage rate of 80% or more, the first breakage rate is a percentage of a first breakage number with respect to a total of a number of pixel groups including four organic layers, the four organic layers of the pixel group include a first organic layer, a second organic layer, a third organic layer, and a fourth organic layer, the first organic layer and the second organic layer are adjacent in the element first direction, the third organic layer and the fourth organic layer are adjacent in the element first direction, the first organic layer and the third organic layer are adjacent in the element second direction, the second organic layer and the fourth organic layer are adjacent in the element second direction, the first breakage number is a number of broken pixel groups, a pixel group in which a path connecting the four organic layers partially includes the transmissive region is referred to as the broken pixel group.

6. The organic device according to any one of claims 1 to 3, wherein in the second display region, the second electrode includes a dry electrode and a branch electrode connected to the dry electrode, the branch electrode includes two first electrode ends in the element first direction and one second electrode end in the element second direction, the two first electrode ends and the one second electrode end are in contact with the transmission region.

7. The organic device according to claim 6, wherein the second electrode includes a first layer and a second layer, the first display region includes electrode overlapping regions arranged in a 23rd period along the element second direction, the electrode overlapping regions include the first layer and the second layer when viewed in plan, a width of the first electrode end is 0.4 times or more of the 23rd period.

8. The organic device according to claim 6, wherein the second electrode includes a first layer and a second layer, the first display region includes electrode overlapping regions arranged in a 13th period along the element first direction, the electrode overlapping regions include the first layer and the second layer when viewed in plan, a width of the second electrode end is 0.4 times or more of the 13th period.

9. A mask set used for manufacturing the second electrode of the organic device according to claim 1, wherein the mask set includes two or more masks including at least a first mask and a second mask, the masks include a shield region and a through-hole, a mask stack in which the two or more masks are overlaid includes a through region overlapping the through-hole when viewed in a normal direction of the masks, the mask stack includes, when viewed in the normal direction of the masks, a mask first region including the through region having a first opening ratio, and a mask second region including the through region having a second opening ratio smaller than the first opening ratio, the mask second region includes the through region, and an overlapping region surrounded by the through region when viewed in plan, the overlapping region includes the shield regions of the two or more masks when viewed in plan, the overlapping region includes a first overlapping region, a second overlapping region adjacent to the first overlapping region across the through region in a mask first direction corresponding to the element first direction, and a third overlapping region adjacent to the first overlapping region and the second overlapping region across the through region in a mask second direction corresponding to the element second direction, the first overlapping region has a first mask shape, the second overlapping region has a second mask shape different from the first mask shape, the third overlapping region has a third mask shape different from the first mask shape and the second mask shape.

10. The mask set according to claim 9, wherein an area of the first overlapping region is different from an area of the second overlapping region.

11. The mask set according to claim 9, wherein the overlapping region includes a fourth overlapping region adjacent to the first overlapping region and the second overlapping region across the through region. ​ The fourth overlapping region has a fourth mask shape different from the first mask shape, the second mask shape, and the third mask shape.

12. The mask set according to any one of claims 9 to 11, wherein In 80% or more of the overlapping region in the mask second region, other overlapping regions having different shapes exist adjacently across the through region.

13. The mask set according to any one of claims 9 to 11, wherein In the mask second region, the through region includes a dry region and a branch region connected to the dry region, The branch region includes two first region ends in the element first direction and one second region end in the element second direction, The two first region ends and the one second region end are connected to the overlapping region.

14. The mask set according to claim 13, wherein The mask first region includes hole overlapping regions arranged in a 27th period along the element second direction, The hole overlapping regions include two or more through holes of the mask in plan view, The width of the first region end is 0.4 times or more of the 27th period.

15. The mask set according to claim 13, wherein The mask first region includes hole overlapping regions arranged in a 17th period along the element first direction, The hole overlapping regions include two or more through holes of the mask in plan view, The width of the second region end is 0.4 times or more of the 17th period.

16. A method for manufacturing an organic device, wherein The method for manufacturing an organic device includes a second electrode forming step of forming a second electrode on an organic layer on a first electrode on a substrate using the mask set according to any one of claims 9 to 11, The second electrode forming step includes: a step of forming a first layer of the second electrode by an evaporation method using the first mask; and a step of forming a second layer of the second electrode by an evaporation method using the second mask.

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