Wafer processing method, equipment and storage medium

Abstract

The present invention discloses a wafer processing method, which includes: dividing the processing area of ​​the wafer to be processed into at least two processing sub-areas; determining the processing sequence and processing direction corresponding to each processing sub-area; controlling the wafer cutting device to perform cutting operations on each processing sub-area in sequence according to the processing sequence; after completing the cutting operation of the wafer to be processed, controlling the wafer splitting device to perform splitting operations on each processing sub-area in sequence along the cutting lines according to the processing sequence. The present invention also discloses a wafer processing device and a storage medium. By partitioning the wafer to be processed into at least two processing sub-areas, and then determining the processing sequence and processing direction corresponding to each processing sub-area, the wafer is processed according to the processing sequence and the processing direction, which solves the problem that the edge of the wafer is curled due to processing the wafer along a single processing direction, thereby affecting the wafer processing effect.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer processing method, equipment and storage medium. Background Art

[0002] Most wafers are currently circular. When laser cutting is performed on wafers, the thermal effect of the laser energy and the thermal influence of the wafers are prone to warping, which is particularly evident at the edge of the wafer. After the wafer is warped, it is easy to cause defocusing and thus reduce the cutting quality. In addition, when the wafer is split and broken, the warping of the wafer is difficult to locate and affects the positioning accuracy. The reduction in cutting quality will also reduce the quality of the splits. When the quality of the splits is reduced, the splitting force needs to be increased to compensate. At this time, the wafer is more likely to deform during the splitting process. Local fractures and dislocations will also aggravate the occurrence of splitting problems, and then a vicious cycle will occur, resulting in low overall splitting quality. In addition, splitting in a single direction is also prone to cause extrusion of the wafer bottom film, causing a certain deformation of the wafer, thereby reducing the splitting effect. Based on the reduced cutting quality and splitting effect, the wafer processing effect is poor.

[0003] The above contents are only used to assist in understanding the technical solution of the present invention and do not constitute an admission that the above contents are prior art. Summary of the invention

[0004] The main purpose of the present invention is to provide a wafer processing method, equipment and storage medium, aiming to solve the problem that processing the wafer in a single direction causes serious wafer edge curling, which affects the wafer processing effect.

[0005] To achieve the above object, the present invention provides a wafer processing method, which is applied to a wafer processing device, wherein the wafer processing device includes a wafer cutting device and a wafer splitting device, and the steps of the wafer processing method include:

[0006] Dividing a to-be-processed area of ​​the to-be-processed wafer into at least two processing sub-areas;

[0007] Determine the processing order and processing direction corresponding to each of the processing sub-areas;

[0008] Controlling the wafer cutting device to perform cutting operations on each of the processing sub-areas in sequence according to the processing sequence to form cutting lines on the surface of the wafer to be processed, wherein the cutting operation is performed on the processing sub-areas in a corresponding processing direction;

[0009] After completing the cutting operation of the wafer to be processed, the wafer splitting device is controlled to perform the splitting operation on each of the processing sub-areas in turn along the cutting lines according to the processing sequence to complete the splitting of the wafer to be processed, wherein the method of performing the splitting operation on the processing sub-areas is to perform the splitting operation on the cutting lines of the processing sub-areas in turn along the corresponding processing direction.

[0010] Optionally, the step of determining the processing order and processing direction corresponding to each processing sub-area includes:

[0011] Determining the processing order of each processing sub-area according to the spacing between each processing sub-area;

[0012] The center position of the wafer to be processed is determined, and the direction in which each processing sub-region extends from the edge to the center position is determined as the processing direction of each processing sub-region.

[0013] Optionally, the step of determining the processing order of each processing sub-area according to the spacing between each processing sub-area comprises:

[0014] Determining a first sub-region to be processed;

[0015] Acquire the distance between the first sub-region to be processed and other processing sub-regions, and determine the other processing sub-region with the largest distance from the first sub-region to be processed as the second sub-region to be processed;

[0016] Obtaining the distance between the second sub-region to be processed and other processing sub-regions except the first sub-region to be processed and the second sub-region to be processed, and determining the other processing sub-regions except the first sub-region to be processed and the second sub-region to be processed with the largest distance from the second sub-region to be processed as the third sub-region to be processed;

[0017] Determine each sub-region to be processed in turn according to the spacing between the determined sub-region to be processed and other undetermined sub-regions to be processed to obtain the Nth sub-region to be processed, and determine the processing order according to the first sub-region to be processed, the second sub-region to be processed, the third sub-region to be processed to the Nth sub-region to be processed.

[0018] Optionally, the wafer cutting device includes a laser emitter, and the step of controlling the wafer cutting device to perform cutting operations on each of the processing sub-areas in sequence according to the processing sequence to form cutting lines on the surface of the wafer to be processed includes:

[0019] Obtaining preset cutting patterns corresponding to respective processing sub-areas of the wafer to be processed;

[0020] Controlling the laser emitter to perform a cutting operation on the first sub-region to be processed along the preset cutting lines in a processing direction corresponding to the first sub-region to be processed;

[0021] After completing the cutting operation of the first sub-region to be processed, controlling the laser emitter to perform a cutting operation on the second sub-region to be processed along the preset cutting lines in a processing direction corresponding to the second sub-region to be processed;

[0022] Cutting operations are performed sequentially on the third to-be-processed area to the Nth to-be-processed area to complete the cutting operation on the wafer to be processed and to form cutting lines on the surface of the wafer to be processed.

[0023] Optionally, the wafer splitting device includes a splitting knife, and after completing the cutting operation of the wafer to be processed, the step of controlling the wafer splitting device to perform a splitting operation on each of the processing sub-areas in sequence along the cutting lines according to the processing sequence to complete the splitting of the wafer to be processed includes:

[0024] Controlling the splitting knife to sequentially perform splitting operations on the cutting lines of the first sub-region to be processed in a processing direction corresponding to the first sub-region to be processed;

[0025] After completing the splitting operation on all the cutting lines corresponding to the first area to be processed, controlling the splitting knife to sequentially perform the splitting operation on the cutting lines of the second sub-area to be processed in the processing direction corresponding to the second sub-area to be processed;

[0026] The splitting operation is performed on the third to-be-processed region to the Nth to-be-processed region in sequence to complete the splitting operation on the wafer to be processed.

[0027] Optionally, before the step of dividing the to-be-processed area of ​​the to-be-processed wafer into at least two processing sub-areas, the step further includes:

[0028] Adhere at least two wafers to be processed to a base film fixed on a steel ring in a preset adhesion manner to complete the bonding operation of the wafers to be processed;

[0029] The wafer to be processed after bonding is placed on a processing station.

[0030] Optionally, the preset adhesion mode is a symmetric matrix attachment mode, and the wafer processing method further includes:

[0031] Determine the processing sub-areas corresponding to each of the wafers to be processed, and determine the processing order and processing direction corresponding to each of the wafers to be processed, wherein the processing order and processing direction corresponding to the wafers to be processed arranged in the same row and / or arranged in the same column are the same;

[0032] Controlling the wafer cutting device to simultaneously perform cutting operations on the wafers to be processed arranged in the same row or the same column according to the processing sequence and the processing direction, so as to complete the cutting operations of all the wafers to be processed;

[0033] After detecting that all wafers to be processed have completed the cutting operation, the wafer cutting device is controlled to simultaneously perform the splitting operation on the wafers to be processed arranged in the same row or column according to the processing sequence and the processing direction to complete the splitting operation of all wafers to be processed.

[0034] In addition, to achieve the above-mentioned purpose, the present invention also provides a wafer processing equipment, which includes a wafer cutting device and a wafer splitting device. The wafer processing equipment includes: a memory, a processor, and a wafer processing program stored in the memory and runnable on the processor. When the wafer processing program is executed by the processor, the steps of the wafer processing method as described above are implemented.

[0035] Optionally, the wafer cutting device comprises a laser emitter, and the wafer splitting device comprises a cleaver.

[0036] In addition, to achieve the above-mentioned purpose, the present invention also provides a storage medium, on which a wafer processing program is stored, and when the wafer processing program is executed by a processor, the steps of the wafer processing method as described above are implemented.

[0037] A wafer processing method, device and storage medium proposed in an embodiment of the present invention divide the wafer to be processed into at least two processing sub-areas before performing cutting operations and splitting operations on the wafer, match a corresponding processing sequence and processing direction for each of the processing sub-areas, and then control the wafer cutting device to perform cutting operations on each of the processing sub-areas in sequence according to the processing sequence, wherein each processing sub-area is matched with a corresponding processing direction, and the manner in which the cutting operation is performed on any processing sub-area is to perform the cutting operation on the processing sub-area according to the processing direction corresponding to the processing sub-area, and after the wafer cutting device completes the cutting operations on each of the processing sub-areas in sequence according to the processing sequence, a plurality of cutting lines are formed on the wafer surface of the wafer to be processed, thereby controlling the wafer splitting. The chip device performs the splitting operation on each of the processing sub-areas in turn along the cutting lines according to the processing sequence until the splitting operation on all the processing sub-areas is completed, wherein the way of performing the splitting operation on the processing sub-areas is to perform the splitting operation on the cutting lines on the processing sub-areas in turn according to the processing direction corresponding to the processing sub-areas. The embodiment of the present invention divides the processing area into partitions, and then processes each partition in accordance with the processing sequence, thereby preventing the problem of processing failure caused by processing the entire wafer in a single direction. The embodiment of the present invention assigns a corresponding processing direction to each processing sub-area, further reducing the edge curling of each processing area, thereby reducing the edge curling of the entire wafer, thereby improving the wafer cutting quality and wafer splitting quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 It is a schematic diagram of the structure of a wafer processing equipment in the hardware operating environment involved in the embodiment of the present invention;

[0039] Figure 2 It is a schematic diagram of the process of the first embodiment of the wafer processing method of the present invention;

[0040] Figure 3 A schematic diagram of dividing the area to be processed into two processing sub-areas;

[0041] Figure 4 It is a schematic diagram of processing sequence and processing direction;

[0042] Figure 5 It is a detailed flow chart of step S20 of the first embodiment of the wafer processing method of the present invention;

[0043] Figure 6 It is a detailed flow chart of step S21 of the first embodiment of the wafer processing method of the present invention;

[0044] Figure 7 It is a detailed flow chart of step S30 of the first embodiment of the wafer processing method of the present invention;

[0045] Figure 8 This is an example of a preset cutting pattern;

[0046] Fig. 9 It is a detailed flow chart of step S40 of the first embodiment of the wafer processing method of the present invention;

[0047] Fig.10 It is a schematic diagram of the process of the second embodiment of the wafer processing method of the present invention;

[0048] Fig.11 Schematic diagram of wafer bonding with different attachment methods;

[0049] Fig.12 It is a schematic diagram of the process of the second embodiment of the wafer processing method of the present invention;

[0050] Fig.13 A schematic diagram showing the processing sequence and processing direction corresponding to each wafer to be processed in a 2*2 matrix is ​​shown.

[0051] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0052] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0053] The main solution of the embodiment of the present invention is: dividing the processing area of ​​the wafer to be processed into at least two processing sub-areas; determining the processing sequence and processing direction corresponding to each of the processing sub-areas; controlling the wafer cutting device to perform cutting operations on each of the processing sub-areas in turn according to the processing sequence to form cutting lines on the surface of the wafer to be processed, wherein the method of performing the cutting operation on the processing sub-area is to perform the cutting operation on the processing sub-area in the corresponding processing direction; after completing the cutting operation of the wafer to be processed, controlling the wafer splitting device to perform the splitting operation on each of the processing sub-areas in turn along the cutting lines according to the processing sequence to complete the splitting of the wafer to be processed, wherein the method of performing the splitting operation on the processing sub-area is to perform the splitting operation on the cutting lines of the processing sub-area in turn in the corresponding processing direction.

[0054] like Figure 1 As shown, Figure 1 It is a schematic diagram of the structure of wafer processing equipment in the hardware operating environment involved in the embodiment of the present invention.

[0055] The terminal of the embodiment of the present invention is a wafer processing equipment, which includes a wafer cutting device and a wafer splitting device. The wafer cutting device is used to cut the wafer to form cutting lines on the wafer, that is, corresponding grooves appear at the cutting lines, and the wafer splitting device is used to perform splitting on the cutting lines.

[0056] Optionally, the wafer cutting device comprises a laser emitter, which may be a picosecond emitter or a nanosecond emitter.

[0057] Optionally, when a wafer is cut and split using a wafer cutting device and a wafer splitting device, the cutting lines of the wafer cutting device are consistent with the splitting lines of the wafer splitting device, that is, the cutting lines formed on the surface of the wafer after the cutting operation are the splitting lines corresponding to the wafer splitting device, and the splitting lines are used to guide the wafer splitting device to perform the splitting operation.

[0058] Optionally, the wafer processing equipment proposed in the present invention also includes a main control device, which is used to control the laser parameters of the wafer cutting device. When the operator uses the wafer processing equipment to cut and split, the preset cutting pattern can be first imported into the main control device. After receiving the preset cutting pattern, the main control device sets the laser cutting parameters of the wafer cutting device and the splitting parameters of the splitting device according to the preset cutting pattern. Furthermore, after the wafer is laser cut by the wafer cutting device, the main control device identifies the cutting patterns on the cut wafer, and controls the wafer splitting device to split the laser cut wafer according to the cutting patterns on the laser cut wafer, thereby ensuring that the cutting patterns of the wafer are consistent with the splitting patterns.

[0059] Optionally, the laser splitting device includes a splitting knife, which splits the cutting lines from top to bottom to separate the wafers on both sides of the cutting lines, wherein the laser splitting device includes two wafer carriers, the wafer carriers are used to carry the wafers, and there is a gap of a preset distance between the wafer carriers. When the wafer is split, the cutting lines corresponding to the wafer are placed at the positions corresponding to the gaps, and the splitting knife is located directly above the gaps. When the splitting knife splits downward along the vertical direction, the splitting knife just performs the splitting operation on the cutting lines on the gaps, thereby completing the splitting operation.

[0060] Optionally, the wafer processing equipment may further include: a processor 1001, such as a CPU, a network interface 1004, a user interface 1003, a memory 1005, and a communication bus 1002. Among them, the communication bus 1002 is used to realize the connection and communication between these components. The user interface 1003 may include a display screen (Display), an input unit such as a keyboard (Keyboard), and the optional user interface 1003 may also include a standard wired interface and a wireless interface. The network interface 1004 may optionally include a standard wired interface and a wireless interface (such as a WI-FI interface). The memory 1005 may be a high-speed RAM memory, or a stable memory (non-volatile memory), such as a disk memory. The memory 1005 may also be a storage device independent of the aforementioned processor 1001.

[0061] Those skilled in the art will understand that Figure 1 The terminal structure shown in the figure does not constitute a limitation on the terminal, and may include more or less components than shown in the figure, or combine certain components, or arrange the components differently.

[0062] like Figure 1 As shown, the memory 1005 as a computer storage medium may include an operating system, a network communication module, a user interface module, and a wafer processing program.

[0063] exist Figure 1 In the terminal shown, the network interface 1004 is mainly used to connect to the backend server and communicate data with the backend server; the user interface 1003 is mainly used to connect to the client (user end) and communicate data with the client; and the processor 1001 can be used to call the wafer processing program stored in the memory 1005 and perform the following operations:

[0064] Dividing a to-be-processed area of ​​the to-be-processed wafer into at least two processing sub-areas;

[0065] Determine the processing order and processing direction corresponding to each of the processing sub-areas;

[0066] Controlling the wafer cutting device to perform cutting operations on each of the processing sub-areas in sequence according to the processing sequence to form cutting lines on the surface of the wafer to be processed, wherein the cutting operation is performed on the processing sub-areas in a corresponding processing direction;

[0067] After completing the cutting operation of the wafer to be processed, the wafer splitting device is controlled to perform the splitting operation on each of the processing sub-areas in turn along the cutting lines according to the processing sequence to complete the splitting of the wafer to be processed, wherein the method of performing the splitting operation on the processing sub-areas is to perform the splitting operation on the cutting lines of the processing sub-areas in turn along the corresponding processing direction.

[0068] Further, the processor 1001 may call the wafer processing program stored in the memory 1005, and further perform the following operations:

[0069] Determining the processing order of each processing sub-area according to the spacing between each processing sub-area;

[0070] The center position of the wafer to be processed is determined, and the direction in which each processing sub-region extends from the edge to the center position is determined as the processing direction of each processing sub-region.

[0071] Further, the processor 1001 may call the wafer processing program stored in the memory 1005, and further perform the following operations:

[0072] Determining a first sub-region to be processed;

[0073] Acquire the distance between the first sub-region to be processed and other processing sub-regions, and determine the other processing sub-region with the largest distance from the first sub-region to be processed as the second sub-region to be processed;

[0074] Obtaining the distance between the second sub-region to be processed and other processing sub-regions except the first sub-region to be processed and the second sub-region to be processed, and determining the other processing sub-regions except the first sub-region to be processed and the second sub-region to be processed with the largest distance from the second sub-region to be processed as the third sub-region to be processed;

[0075] The sub-regions to be processed are determined in sequence based on the spacing between the determined sub-regions to be processed and other undetermined sub-regions to be processed to obtain the Nth sub-region to be processed, and the processing order is determined based on the first sub-region to be processed, the second sub-region to be processed, the third sub-region to be processed to the Nth sub-region to be processed.

[0076] Further, the processor 1001 may call the wafer processing program stored in the memory 1005, and further perform the following operations:

[0077] Obtaining preset cutting patterns corresponding to respective processing sub-areas of the wafer to be processed;

[0078] Controlling the laser emitter to perform a cutting operation on the first sub-region to be processed along the preset cutting lines in a processing direction corresponding to the first sub-region to be processed;

[0079] After completing the cutting operation of the first sub-region to be processed, controlling the laser emitter to perform a cutting operation on the second sub-region to be processed along the preset cutting lines in a processing direction corresponding to the second sub-region to be processed;

[0080] Cutting operations are performed sequentially on the third to-be-processed area to the Nth to-be-processed area to complete the cutting operation on the wafer to be processed and to form cutting lines on the surface of the wafer to be processed.

[0081] Further, the processor 1001 may call the wafer processing program stored in the memory 1005, and further perform the following operations:

[0082] Controlling the splitting knife to sequentially perform splitting operations on the cutting lines of the first sub-region to be processed in a processing direction corresponding to the first sub-region to be processed;

[0083] After completing the splitting operation on all the cutting lines corresponding to the first area to be processed, controlling the splitting knife to sequentially perform the splitting operation on the cutting lines of the second sub-area to be processed in the processing direction corresponding to the second sub-area to be processed;

[0084] The splitting operation is performed on the third to-be-processed region to the Nth to-be-processed region in sequence to complete the splitting operation on the wafer to be processed.

[0085] Further, the processor 1001 may call the wafer processing program stored in the memory 1005, and further perform the following operations:

[0086] Adhere at least two wafers to be processed to a base film fixed on a steel ring in a preset adhesion manner to complete the bonding operation of the wafers to be processed;

[0087] The wafer to be processed after bonding is placed on a processing station.

[0088] Further, the processor 1001 may call the wafer processing program stored in the memory 1005, and further perform the following operations:

[0089] Determine the processing sub-areas corresponding to each of the wafers to be processed, and determine the processing order and processing direction corresponding to each of the wafers to be processed, wherein the processing order and processing direction corresponding to the wafers to be processed arranged in the same row and / or arranged in the same column are the same;

[0090] Controlling the wafer cutting device to simultaneously perform cutting operations on the wafers to be processed arranged in the same row or the same column according to the processing sequence and the processing direction, so as to complete the cutting operations of all the wafers to be processed;

[0091] After detecting that all wafers to be processed have completed the cutting operation, the wafer cutting device is controlled to simultaneously perform the splitting operation on the wafers to be processed arranged in the same row or column according to the processing sequence and the processing direction to complete the splitting operation of all wafers to be processed.

[0092] First embodiment

[0093] Reference Figure 2 A first embodiment of the present invention provides a wafer processing method, the wafer processing method comprising:

[0094] Step S10, dividing the to-be-processed area of ​​the to-be-processed wafer into at least two processing sub-areas;

[0095] Step S20, determining the processing order and processing direction corresponding to each of the processing sub-areas;

[0096] Step S30, controlling the wafer cutting device to perform a cutting operation on each of the processing sub-areas in sequence according to the processing sequence to form cutting lines on the surface of the wafer to be processed, wherein the cutting operation is performed on the processing sub-areas in a corresponding processing direction;

[0097] Step S40, after completing the cutting operation of the wafer to be processed, control the wafer splitting device to perform the splitting operation on each of the processing sub-areas in turn along the cutting lines according to the processing sequence to complete the splitting of the wafer to be processed, wherein the method of performing the splitting operation on the processing sub-areas is to perform the splitting operation on the cutting lines of the processing sub-areas in turn in the corresponding processing direction.

[0098] In this embodiment, it is applied to wafer processing equipment, and the wafer processing equipment includes a wafer cutting device and a wafer splitting device. The wafer to be processed is a wafer after bonding. The wafer to be processed can be a wafer with electrodes on its surface. The wafer with electrodes on its surface is covered with preset cutting lines. The wafer to be processed can also be a glass wafer such as a slide glass, a filter, etc., whose surface is not covered with electrodes. The glass wafer without electrodes on its surface does not have preset cutting lines on its surface.

[0099] Optionally, after obtaining the wafer to be processed, the area to be processed of the wafer to be processed is divided into at least two processing sub-areas. It can be understood that the embodiment of the present application divides the area to be processed into various processing sub-areas, which does not mean that the wafer to be processed is actually divided.

[0100] Optionally, the method of dividing the area to be processed of the wafer to be processed into at least two sub-areas includes horizontal division and vertical division. The horizontal division is to select at least one dividing line in the horizontal direction and use the dividing line to horizontally divide the area to be processed; the vertical division is to select at least one dividing line in the vertical direction and use the dividing line to vertically divide the area to be processed.

[0101] Optionally, the method of dividing the processing area of ​​the wafer to be processed into at least two sub-areas can be to determine the number of areas and the division method according to the surface feature data of the wafer to be processed, and divide the processing area of ​​the wafer to be processed into at least two sub-areas according to the number of areas and the division method. Wherein, the surface feature data includes but is not limited to the surface area, the preset cutting lines covering the surface of the wafer, and the surface processing accuracy. The specific method of determining the number of areas and the division method according to the surface feature data can be that the larger the surface area, the more areas, the smaller the surface area, the smaller the number of areas, the higher the surface processing accuracy, the more areas, the lower the processing accuracy, and the fewer areas. The method of determining the division method can be that after determining the number of areas N, the dividing line is determined to be the number of areas-1, that is, N-1, and N-1 dividing lines are selected from the preset cutting lines. According to the dividing lines, the processing area of ​​the wafer is divided into N processing areas. Optionally, the spacing between the dividing lines is the same.

[0102] Optionally, the method of dividing the area to be processed of the wafer to be processed into at least two sub-areas can also be based on preset rules to divide the area to be processed into at least two sub-areas. The preset rules can be user-defined settings, or can be determined by the user in real time according to the wafer to be processed. The preset rules include but are not limited to splitting the area to be processed into two, splitting the area to be processed into two, splitting the area to be processed into two,... splitting the area to be processed into two.

[0103] Optionally, the sizes of the processing sub-areas can be the same or different, see Figure 3 , Figure 3 A schematic diagram showing the division of the area to be processed into two processing sub-areas is shown.

[0104] Optionally, based on the wafer surface of the wafer to be processed including two preset cutting lines in different directions, the two different directions are perpendicular to each other, and the embodiment of the present application defines the two directions in the horizontal direction and the vertical direction. When the wafer to be processed is processed, the preset cutting lines in one direction need to be processed. After completing the processing in one direction, the wafer to be processed is rotated 90 degrees, and the preset cutting lines in the other direction are processed. Based on this, when the area to be processed is divided into at least two processing sub-areas, the area to be processed in one direction is divided into at least two processing sub-areas, and then the area to be processed in another direction is divided into at least two processing sub-areas. When the actual processing is carried out, the processing of the area to be processed in one direction is completed first, and then the wafer to be processed is rotated 90 degrees to complete the processing of the area to be processed in another direction. It can be understood that the method of processing the areas to be processed in different directions is the same, and the embodiment of the present application is analyzed by example with one direction (horizontal direction).

[0105] Optionally, after determining each of the processing sub-regions, the processing sequence and processing direction corresponding to each of the processing sub-regions are determined. The processing sequence and processing direction corresponding to each of the processing sub-regions are different. For example, referring to Figure 4 , the processing sub-area includes processing sub-area 1, processing sub-area 2, processing sub-area 3, and processing sub-area. The numbers are used to indicate the processing order, and the arrows are used to indicate the processing direction. The processing order can be: first process processing sub-area 1, then process processing sub-area 3, then process processing sub-area 2, and finally process processing sub-area 4. The processing directions corresponding to each processing sub-area can be: the processing direction corresponding to processing sub-area 1 is from top to bottom, the processing direction of the processing sub-area is from top to bottom, the processing direction of processing sub-area 3 is from bottom to top, the processing direction of processing sub-area 4 is from bottom to top.

[0106] Optionally, the processing sequence may be determined randomly, referring to Figure 4 The processing order may be: processing sub-area 1-processing sub-area 2-processing sub-area 3-processing sub-area 4; or processing sub-area 1-processing sub-area 3-processing sub-area 4-processing sub-area 5, etc. The processing direction may also be randomly selected. Figure 4 There are four processing sub-areas, the direction of the processing sub-area 1 can be from bottom to top, the direction of the processing sub-area 2 can be from bottom to top, the processing direction of the processing sub-area 3 can also be from top to bottom, and the processing direction of the processing sub-area 4 can also be from top to bottom.

[0107] Optionally, in the embodiments of the present application, refer to Figure 5 , Figure 5A schematic diagram of a process for determining the processing sequence and processing direction corresponding to each processing sub-area is shown, and the step S20 includes:

[0108] Step S21, determining the processing order of each processing sub-area according to the spacing between each processing sub-area;

[0109] Step S22, determining the center position of the wafer to be processed, and determining the processing direction of each processing sub-region according to the direction in which each processing sub-region extends from the edge to the center position.

[0110] Optionally, when the processing area of ​​the wafer to be processed is divided into a plurality of processing sub-areas, the number of the processing sub-areas is more than 2, for example, 3 or 4, and the spacing between each processing sub-area is different. For example, referring to Figure 4 Among the four processing sub-areas shown, the distance between processing sub-area 1 and processing sub-area 2 is 0 mm, the distance between processing sub-area 1 and processing sub-area 3 is 10 mm, the distance between processing sub-area 1 and processing sub-area 4 is 20 mm, the distance between processing sub-area 2 and processing sub-area 3 is 0 mm, the distance between processing sub-area 2 and processing sub-area 4 is 10 mm, and the distance between processing sub-area 3 and processing sub-area 4 is 0 mm.

[0111] Optionally, when laser cutting is actually performed on the wafer to be processed, it is assumed that laser cutting is performed on processing sub-area 1 first. At this time, the thermal effect of the laser energy and the degree of thermal influence become smaller as the spacing increases, that is, the degree of thermal effect on processing sub-area 2 is the highest, and the degree of thermal effect on processing sub-area 4 is the lowest. If at this time, after laser cutting processing sub-area 1 is completed, processing sub-area 2 is directly processed, based on the fact that processing sub-area 2 has been subjected to a higher thermal effect before processing, laser cutting is performed on processing sub-area 2 at this time, and the laser energy value borne by processing sub-area 2 far exceeds the preset laser energy value for processing processing sub-area 2. At this time, it is easy to cause cutting failure of processing sub-area 2, and based on the thermal effect on processing sub-area 4 The influence degree is the lowest. After the laser cutting process is completed on the processing sub-area 1, the laser cutting process is performed on the processing sub-area 4. Because the influence degree of the thermal effect on the processing sub-area 4 before processing is the lowest, which is equivalent to being basically not affected by the thermal effect, the processing of the processing sub-area 4 based on the laser emitter can greatly reduce the curling degree of the processing sub-area 4, thereby improving the cutting effect. It can be understood that in the process of performing the cutting operation on the processing sub-area 4, the processing sub-area 2 and the processing sub-area 3 can dissipate the heat affected by the thermal effect they are subjected to, so as to reduce the influence degree of their own thermal effect, and then after processing the processing sub-area 4, return to process the processing sub-area 2, and then process the processing sub-area 3. Through the above method, the wafer cutting effect can be greatly improved.

[0112] Based on this, the method of determining the processing order of each processing sub-region according to the spacing between each processing sub-region may be to determine the first processing sub-regions corresponding to the spacing exceeding the preset distance according to the spacing, determine the processing order of the first processing sub-region, and determine the processing order of the processing sub-regions other than the first processing sub-region according to the processing order of the first processing sub-region, wherein the processing order of the first processing sub-region may be determined by comparing the distances between each first processing sub-region and the center of the circle, the processing order of the first processing sub-region with the largest distance is the most forward, and then comparing the spacings between the first processing sub-regions other than the most forward first processing sub-region and the most forward first processing sub-region, and determining the next processing sub-region corresponding to the most forward first processing sub-region with the largest spacing with the most forward first processing sub-region, and so on, so as to determine the processing order of the first processing sub-regions corresponding to the spacing exceeding the preset distance in turn, and then after determining the processing order of each first processing sub-region, determine the processing order of the processing sub-regions other than the first processing sub-region according to the processing order of the first processing sub-region. For example, referring to Figure 4, the preset distance is 10 mm, and the distance between the processing sub-area 1 and the processing sub-area 4 is 20 mm, that is, the first processing sub-area is the processing sub-area 1 and the processing sub-area 4, that is, the processing sub-area 1 and the processing sub-area 4 are processed first, and when the processing order of the first processing sub-area is to process the processing sub-area 1 first and then the processing sub-area 4, the processing order of the processing sub-area 2 and the processing sub-area 3 is determined to be to process the processing sub-area 2 first and then the processing sub-area 3.

[0113] It can be understood that the embodiment of the present application assigns a corresponding processing sequence to each of the processing sub-areas, so as to reduce the occurrence of continuous cutting operations on two processing sub-areas with a smaller distance. In addition, the greater the spacing, the farther the two processing sub-areas corresponding to the spacing are from the center of the wafer. When the wafer is actually processed, the area closer to the center of the wafer has a higher degree of adhesion with the base film and is less likely to curl. The area farther away from the center of the wafer has a lower degree of adhesion with the base film than the area close to the center of the wafer. The embodiment of the present application first performs laser cutting operations on the area farther away from the center of the wafer, and then performs laser cutting operations on the area close to the center. This can avoid the situation where the area far away from the center is affected by thermal effects when the area close to the center is processed first, resulting in a higher possibility and degree of edge curling. It can be understood that edge warping can easily cause laser defocusing and thus affect the cutting quality, thereby reducing the processing effect. The embodiment of the present application can greatly reduce the degree of edge curling, thereby improving the cutting quality and processing effect.

[0114] Optionally, in yet another embodiment, referring to Figure 6 , the step S21 comprises:

[0115] Step S211, determining a first sub-region to be processed;

[0116] Step S212, obtaining the distance between the first sub-region to be processed and other processing sub-regions, and determining the other processing sub-region having the largest distance from the first sub-region to be processed as the second sub-region to be processed;

[0117] Step S213, obtaining the distance between the second sub-region to be processed and other processing sub-regions except the first sub-region to be processed and the second sub-region to be processed, and determining the other processing sub-region except the first sub-region to be processed and the second sub-region to be processed which has the largest distance from the second sub-region to be processed as the third sub-region to be processed;

[0118] Step S214, determine each sub-region to be processed in turn according to the spacing between the determined sub-region to be processed and other undetermined sub-regions to be processed to obtain the Nth sub-region to be processed, and determine the processing order according to the first sub-region to be processed, the second sub-region to be processed, the third sub-region to be processed to the Nth sub-region to be processed.

[0119] Optionally, the first sub-region to be processed is one of the processing sub-regions of each of the processing sub-regions, and the first sub-region to be processed is a processing sub-region that satisfies a preset rule, and the preset rule may be one of the two processing sub-regions corresponding to the largest spacing among the spacings, and the preset rule may also be the processing sub-region with the largest distance from the center of the circle of the region to be processed. Figure 4 , Figure 4 Four processing sub-areas are shown, wherein the spacing between processing sub-area 1 and processing sub-area 2 is 0 mm, the spacing between processing sub-area 1 and processing sub-area 3 is 10 mm, the spacing between processing sub-area 1 and processing sub-area 4 is 20 mm, the spacing between processing sub-area 2 and processing sub-area 3 is 0 mm, the spacing between processing sub-area 2 and processing sub-area 4 is 10 mm, the spacing between processing sub-area 3 and processing sub-area 4 is 0 mm, the distance between processing sub-area 1 and the center of a circle is 10 mm, the distance between processing sub-area 2 and the center of a circle is 0 mm, the distance between processing sub-area 3 and the center of a circle is 0 mm, and the distance between processing sub-area 4 and the center of a circle is 10 mm, wherein one of the two processing sub-areas corresponding to the largest spacing among the spacings may be processing sub-area 1 or processing sub-area 4, and the processing sub-area having the largest distance from the center of the circle of the area to be processed may also be processing sub-area 1 or processing sub-area 4. Optionally, when there are at least two processing sub-regions satisfying the preset rule, the processing sub-region with the smallest sequence number is taken as the first sub-region to be processed, that is, processing sub-region 1.

[0120] Optionally, after determining the first area to be processed, the spacing between the first sub-area to be processed and other processing sub-areas is determined based on the spacing between each processing sub-area, and the other processing sub-areas are processing sub-areas other than the processing sub-areas corresponding to the first sub-area to be processed in all processing sub-areas corresponding to the wafer to be processed. After determining the spacing, the other processing sub-area with the largest spacing from the first sub-area to be processed is determined as the second sub-area to be processed. Figure 4 , the processing sub-region farthest from the first sub-region to be processed (processing sub-region 1) is processing sub-region 4, that is, processing sub-region 4 is determined as the second sub-region to be processed.

[0121] Optionally, after determining the second sub-region to be processed, the distance between the second sub-region to be processed and other processing sub-regions other than the first sub-region to be processed and the second sub-region to be processed is determined according to the distance between each processing sub-region, and the processing sub-region other than the first sub-region to be processed and the second sub-region to be processed having the largest distance from the second sub-region to be processed is determined as the third sub-region to be processed. Figure 3 , the processing sub-region farthest from the second sub-region to be processed (processing sub-region 4) is processing sub-region 2, that is, processing sub-region 2 is determined as the third sub-region to be processed, and the remaining processing sub-region 3 is the fourth sub-region to be processed.

[0122] Optionally, each sub-region to be processed is determined in turn according to the spacing between the determined sub-region to be processed and other undetermined sub-regions to be processed to obtain the Nth sub-region to be processed, and the processing order is determined according to the first sub-region to be processed, the second sub-region to be processed, the third sub-region to be processed to the Nth sub-region to be processed.

[0123] Optionally, the processing direction of each processing sub-area is determined by obtaining the center position of the wafer to be processed, and determining the processing direction of each processing sub-area according to the direction extending from the edge to the center position of each processing sub-area. The center position is the center of the circle, and the edge can be the preset cutting line farthest from the center of the circle, or the area farthest from the center of the circle, for example: Figure 4 , the processing direction of the processing sub-area 1 is from top to bottom. It can be understood that the area of ​​the edge (farthest from the center of the circle) corresponding to the processing sub-area 1 is the uppermost tangent point of the wafer, and the center position is below the processing sub-area 1. The direction extending from the uppermost tangent point to the center position is from top to bottom, and thus it can be determined that the processing direction of the processing sub-area 1 is from top to bottom.

[0124] Optionally, the processing direction of each processing sub-area is the direction extending from the edge to the center. It can be understood that the length of the preset cutting lines on the surface of the wafer is longer as it approaches the center of the circle and shorter as it is farther away from the center of the circle. When the direction extending from the edge to the center of the circle is used as the processing direction, the preset cutting lines far from the center of the circle can be processed first according to the processing direction, and gradually processed from the preset cutting lines far from the center of the circle to the preset cutting lines near the center of the circle. The length of the processed preset cutting lines becomes longer and longer with the processing direction. It can be understood that the farther the distance between the preset cutting lines and the center of the circle is, the lower the degree of adhesion between the preset cutting lines and the bottom film is, and the more easily affected by the degree of extrusion of the bottom film. If the laser gradually processes from the shorter preset cutting lines to the longer preset cutting lines, it can be avoided that when the area near the center of the circle is processed first, the area far from the center of the circle is affected by the thermal effect, resulting in a higher possibility of edge curling and a higher degree of curling, thereby also avoiding the influence of the extrusion of the bottom film on the cutting lines far from the center of the circle, and preventing the cutting lines far from the center of the circle from curling due to the extrusion of the bottom film.

[0125] Optionally, after determining the processing direction and processing sequence of each processing sub-area, the wafer cutting device is controlled to complete the cutting operation of the wafer to be processed according to the processing direction and the processing sequence, and after completing the cutting operation, the wafer cutting device is controlled to complete the splitting operation of the wafer to be processed. The method of performing the cutting operation on the processing sub-area is to perform the cutting operation on the processing sub-area in the corresponding processing direction.

[0126] Optionally, refer to Figure 7 , the S30 includes:

[0127] S31, obtaining preset cutting lines corresponding to each processing sub-area of ​​the wafer to be processed;

[0128] S32, controlling the laser emitter to perform a cutting operation on the first sub-region to be processed along the preset cutting line in a processing direction corresponding to the first sub-region to be processed;

[0129] S33, after completing the cutting operation on the first sub-region to be processed, controlling the laser emitter to perform a cutting operation on the second sub-region to be processed along the preset cutting lines in a processing direction corresponding to the second sub-region to be processed;

[0130] S34, performing cutting operations on the third to-be-processed area to the Nth to-be-processed area in sequence, so as to complete the cutting operation on the wafer to be processed and form cutting lines on the surface of the wafer to be processed.

[0131] Optionally, when the surface of the wafer to be processed is covered with electrodes, the preset cutting lines are determined according to the arrangement of the electrodes and the gaps between the electrodes, that is, the surface is covered with preset cutting lines; when the surface of the wafer to be processed is not covered with electrodes, the preset cutting lines can be formed by the user setting the cutting track. Figure 8 , Figure 8 An example diagram showing a preset cutting pattern is shown. Figure 8 The dotted lines represent the preset cutting lines corresponding to the processing sub-areas. Processing sub-area 1 includes preset cutting line 1, preset cutting line 2, preset cutting line 3, and preset cutting line 4.

[0132] Optionally, the wafer cutting device includes a laser emitter, and after determining the preset cutting lines corresponding to each processing sub-region, the cutting operation is performed on each processing sub-region in sequence according to the processing sequence. Specifically, the laser emitter is first controlled to process the first sub-region to be processed, and after the cutting operation of the first sub-region to be processed is completed, the laser emitter is controlled to process the second sub-region to be processed, and then the third sub-region to be processed is processed, and so on, until the cutting operation of all processing sub-regions is completed.

[0133] Optionally, the cutting operation is performed on the processing sub-region in a corresponding processing direction. Specifically, the laser emitter is controlled to perform a cutting operation on the first sub-region to be processed along the preset cutting line in the processing direction corresponding to the first sub-region to be processed. For example, referring to Figure 8 , Figure 8 The processing direction of the first sub-area to be processed is shown to be from top to bottom, and the process of the laser emitter performing processing along the preset cutting lines in the processing direction includes: according to the processing direction from top to small, first processing the preset cutting line 1, then processing the preset cutting line 2, then processing the preset cutting line 3, and finally processing the preset cutting line 4.

[0134] Optionally, in another embodiment, before controlling the laser emitter to perform the cutting operation, the laser emission parameters are determined according to the preset cutting lines, and the laser emission parameters include laser power, laser wavelength, cutting depth, number of cutting times, etc. After determining the laser emission parameters, the laser emitter is controlled according to the laser emission parameters to perform the cutting operation on the first sub-region to be processed in the processing direction corresponding to the first sub-region to be processed along the preset cutting lines; after completing the cutting operation on the first sub-region to be processed, the laser emitter is controlled to perform the cutting operation on the second sub-region to be processed in the processing direction corresponding to the second sub-region to be processed along the preset cutting lines; the cutting operation is performed on the third to Nth regions to be processed in turn to complete the cutting operation on the wafer to be processed; after completing the cutting operation on each processing sub-region of the wafer to be processed in turn, cutting lines are formed on the surface of the wafer to be processed, and the cutting lines are preset cutting lines with a certain cutting depth, that is, the positions of the preset cutting lines and the cutting lines coincide, and the cutting lines are the preset cutting lines after processing.

[0135] Optionally, based on the need to perform cutting operations on the preset cutting lines in the horizontal direction and the cutting lines in the vertical direction when performing a cutting operation on the wafer to be processed, the embodiment of the present application can first perform a cutting operation on the preset cutting lines in the horizontal direction in a partitioned processing manner, and then rotate the wafer to be processed 90 degrees, and then perform a cutting operation on the preset cutting lines in the vertical direction. It can be understood that after completing the cutting operations on the preset cutting lines in two directions, a plurality of cutting lines with cutting depths are formed on the surface of the wafer to be processed. Based on the fact that the cutting lines include horizontal and vertical directions, the cutting lines on the surface of the wafer to be processed are in a grid-like shape.

[0136] Optionally, after completing the cutting operation of the wafer to be processed, the wafer splitting device is controlled to perform the splitting operation on each of the processing sub-areas in turn along the cutting lines according to the processing sequence to complete the splitting of the wafer to be processed, wherein the method of performing the splitting operation on the processing sub-areas is to perform the splitting operation on the cutting lines of the processing sub-areas in turn in the corresponding processing direction.

[0137] Optionally, in another embodiment, the method of controlling the wafer splitting device to perform the splitting operation on each processing sub-region includes controlling the splitting device to divide the wafer to be processed into each independent processing sub-region according to the dividing lines corresponding to each processing sub-region. At this time, each processing sub-region is independent of each other, and performing a splitting operation on any processing sub-region will not affect other processing sub-regions. After each processing sub-region is split into each independent processing sub-region, the splitting operation is performed on each processing sub-region according to the processing direction.

[0138] Optionally, in yet another embodiment, referring to Fig. 9 , the S40 includes:

[0139] S41, controlling the splitting knife to sequentially perform splitting operations on the cutting lines of the first sub-region to be processed in a processing direction corresponding to the first sub-region to be processed;

[0140] S42, after completing the splitting operation on all the cutting lines corresponding to the first area to be processed, controlling the splitting knife to sequentially perform the splitting operation on the cutting lines of the second sub-area to be processed in the processing direction corresponding to the second sub-area to be processed;

[0141] S43, performing the splitting operation on the third to-be-processed region to the Nth to-be-processed region in sequence to complete the splitting operation on the wafer to be processed.

[0142] Optionally, it is applied to a wafer splitting device, the wafer splitting device includes a splitting knife, and after the wafer to be processed completes the cutting operation, the wafer surface of the wafer to be processed includes a plurality of cutting lines corresponding to the preset cutting lines, based on which, after determining the cutting lines corresponding to each processing sub-area, the cutting operation is performed on each processing sub-area in sequence according to the processing sequence. Specifically, the splitting knife is first controlled to process the first sub-area to be processed, and after completing the splitting operation of the first sub-area to be processed, the splitting knife is controlled to process the second sub-area to be processed, and then the third sub-area to be processed is processed, and so on, until the splitting operation of all processing sub-areas is completed.

[0143] Optionally, the splitting operation is performed on the processing sub-region in a manner of sequentially performing the splitting operation on the cutting lines of the processing sub-region in a corresponding processing direction. Specifically, the splitting knife is controlled to perform the splitting operation on the first sub-region to be processed along the cutting lines in the processing direction corresponding to the first sub-region to be processed. For example, referring to Figure 8 , Figure 8 The processing direction of the first sub-area to be processed is shown to be from top to bottom, and the process of the laser emitter processing along the cutting lines in the processing direction includes: according to the processing direction from top to small, first process cutting line 1, then process cutting line 2, then process cutting line 3, and finally process cutting line 4.

[0144] Optionally, in another embodiment, before controlling the laser emitter to perform the splitting operation, the splitting parameters are determined according to the splitting lines, and the splitting parameters include the number of splitting times, the splitting order, the blade length, the blade width, etc. After determining the splitting parameters, the splitting knife is controlled according to the splitting parameters to perform the splitting operation on the first sub-region to be processed in the processing direction corresponding to the first sub-region to be processed along the cutting lines; after completing the splitting operation on the first sub-region to be processed, the splitting knife is controlled to perform the splitting operation on the second sub-region to be processed in the processing direction corresponding to the second sub-region to be processed along the cutting lines; the splitting operation is performed on the third to Nth regions to be processed in turn to complete the splitting operation on the wafer to be processed; after completing the splitting operation on each processing sub-region of the wafer to be processed in turn, the wafer to be processed is divided into a plurality of grains.

[0145] Optionally, based on the need to perform a splitting operation on the wafer to be processed on the preset cutting lines in the horizontal direction and the cutting lines in the vertical direction, the embodiment of the present application can first perform a splitting operation on the cutting lines in the horizontal direction in a partitioned processing manner, and then rotate the wafer to be processed 90 degrees, and then perform a splitting operation on the cutting lines in the vertical direction. It can be understood that after completing the splitting operation on the cutting lines in two directions, the wafer to be processed is divided into several grains.

[0146] In an embodiment of the present application, the processing area of ​​the wafer to be processed is divided into at least two processing sub-areas, and then the processing order is determined according to the distance between each processing sub-area and the processing direction is determined according to the direction from the edge to the center of each processing sub-area, and then the wafer cutting device is controlled to perform cutting operations on each processing sub-area in sequence according to the processing order to achieve processing from the edge to the center of the circle, and the distance between two consecutively processed processing sub-areas exceeds a preset distance to prevent the next processed sub-area from being affected by the thermal effect of the currently processed sub-area. In addition, when the embodiment of the present application performs a cutting operation on each processing sub-area, it cuts from the edge to the center of the circle. When processing starts from the edge, the unprocessed area is basically not affected by heat, the deformation amount is effectively controlled, and the length of the preset cutting lines of the current processing is less than The length of the preset cutting lines to be processed is further reduced, and the deformation of the wafer is further reduced. In addition, when the wafer to be processed is subjected to the splitting operation, the wafer splitting device is controlled to perform cutting operations on each processing sub-area in turn according to the processing sequence, so as to realize processing from the edge to the center of the circle, and the distance between two processing sub-areas processed continuously exceeds the preset distance. Moreover, when the embodiment of the present application performs the splitting operation on each processing sub-area, the splitting is performed from the edge to the center of the circle, rather than cutting in a single direction, so as to avoid the situation where the wafer bottom film is squeezed due to the splitting in a single direction, causing the wafer to deform, thereby affecting the splitting effect. The embodiment of the present application improves the wafer warping problem in the wafer laser cutting process by partitioning processing, controlling the processing sequence and processing direction of each area, improving the overall laser cutting quality and splitting quality, thereby improving the wafer processing quality.

[0147] Second embodiment

[0148] Based on the first embodiment, refer to Fig.10 , the S10 also includes:

[0149] S50, adhering at least two wafers to be processed to a base film fixed on a steel ring in a preset adhesion manner to complete a bonding operation of the wafers to be processed;

[0150] S60, placing the wafer to be processed after bonding at a processing station.

[0151] In an embodiment of the present application, in order to improve the wafer processing efficiency, the embodiment of the present application proposes a method for processing at least two wafers at the same time. Based on this, before performing the wafer cutting operation and the wafer splitting operation, at least two wafers to be processed are adhered to the base film fixed on the steel ring in a preset patch manner. The number of wafers to be processed can be 2 or 3, which can be determined according to the size of the wafer to be processed and the size of the steel ring. The preset adhesion method can be diagonal attachment or symmetrical matrix attachment. Fig.11 , Fig.11 The following diagram shows two examples of wafer bonding methods. Fig.11 The left side is attached diagonally. Fig.11 The right side is symmetrical matrix attachment. The preset attachment method can be set by the user or determined in real time according to the type of wafer. The types of wafers include wafers with electrodes on the surface and wafers without electrodes on the surface. Because the surface is covered with electrodes, the wafer surface has preset cutting lines. If a symmetrical matrix attachment method is adopted, the wafers are placed on the base film, and the wafers in the same row or column will be misaligned. At this time, when laser cutting and splitting operations are performed on the misaligned wafers in the same row or column, the laser or splitting knife cannot align all wafers in the same row or column at the same time, which may easily cause the laser to be emitted to the location of the electrode, or the splitting knife to split the electrode, thereby damaging the electrode on the wafer. Based on this, the wafer with electrodes on the surface is attached diagonally, and the wafer without electrodes on the surface is attached symmetrically. Alternatively, diagonal attachment can be used.

[0152] Optionally, after completing the bonding operation of all wafers to be processed, the wafers to be processed after bonding are placed in a processing station, and then the step of dividing the processing area of ​​the wafer to be processed into at least two processing sub-areas is performed to perform cutting operations and splitting operations on each of the wafers to be processed.

[0153] Optionally, refer to Fig.12 When the preset attachment method is a symmetrical matrix attachment method, the wafer processing method further includes:

[0154] S70, determining the processing sub-areas corresponding to the respective wafers to be processed, and determining the processing order and processing direction corresponding to the respective wafers to be processed, wherein the processing order and processing direction corresponding to the wafers to be processed arranged in the same row and / or arranged in the same column are the same;

[0155] S80, controlling the wafer cutting device to simultaneously perform cutting operations on the wafers to be processed arranged in the same row or the same column according to the processing sequence and the processing direction, so as to complete the cutting operations of all the wafers to be processed;

[0156] S90, after detecting that the cutting operation is completed for all the wafers to be processed, controlling the wafer cutting device to simultaneously perform the splitting operation on the wafers to be processed arranged in the same row or column according to the processing sequence and the processing direction, so as to complete the splitting operation of all the wafers to be processed.

[0157] Optionally, the symmetric matrix may be a 3*3 matrix, a 2*2 matrix, or a 4*4 matrix. The embodiment of the present application takes a 2*2 matrix as an example for analysis.

[0158] Optionally, the specific implementation process of determining the processing sub-areas corresponding to each of the wafers to be processed is: determine the number of areas, the number of areas corresponding to each wafer can be the same or different, the number of areas is the number of processing sub-areas into which each wafer to be processed is divided, and each wafer to be processed is divided according to the number of areas to determine the processing sub-areas corresponding to each of the wafers to be processed.

[0159] Optionally, after determining the processing sub-areas of each wafer to be processed, the processing order and processing direction corresponding to each wafer to be processed are determined, wherein the processing order and processing direction corresponding to the wafers to be processed arranged in the same row and / or arranged in the same column are the same, for example, referring to Fig.13 , Fig.13 The processing sequence and processing direction corresponding to each wafer to be processed in a 2*2 matrix are shown.

[0160] Optionally, after determining the processing sequence and processing direction corresponding to each wafer to be processed, the wafer cutting device is controlled to simultaneously perform cutting operations on the wafers to be processed arranged in the same row or the same column according to the processing sequence and the processing direction, so as to complete the cutting operations on all the wafers to be processed. For example, when the processing sequence includes processing sub-area 1 as the first sub-area to be processed, and the processing sequence is from top to bottom, the wafer cutting device is controlled to simultaneously perform cutting operations on the preset cutting lines 1 corresponding to the two wafers in the first row, and after completing the cutting operation of the preset cutting lines 1 in the same row, the wafer cutting device is controlled to simultaneously perform cutting operations on the preset cutting lines 2 of the two wafers in the first row, and then complete the cutting operations on the preset cutting lines 3 and the preset cutting lines 4 in turn. After completing the cutting operation of the processing sub-area 1, the cutting operation is completed on the second area to be processed (i.e., processing sub-area 4), until the cutting operations of all the wafers to be processed in the first row are completed, and then the cutting operations of all the wafers to be processed in the second row are completed.

[0161] It can be understood that it takes N cutting times to process one wafer, and 4N cutting times to process four wafers, while the number of cutting times in the embodiment of the present application is 2N, which greatly reduces the number of cutting times and the number of times the wafers are moved, while saving the use of base film and steel rings, improving the cutting process efficiency and saving the use of base film.

[0162] Optionally, after detecting that the cutting operation is completed for all wafers to be processed, the wafer cutting device is controlled to simultaneously perform the splitting operation on the wafers to be processed arranged in the same row or column according to the processing sequence and the processing direction, so as to complete the splitting operation of all wafers to be processed. Since the processing sequence and processing direction corresponding to the splitting operation are similar to the cutting operation, they will not be repeated here.

[0163] Optionally, when the preset attachment mode is diagonal attachment, the wafer processing method further includes:

[0164] Determine the processing sub-areas corresponding to each of the wafers to be processed, and determine the processing order and processing direction corresponding to each of the wafers to be processed;

[0165] Controlling the wafer cutting device to perform cutting operations on each wafer to be processed in sequence according to the processing sequence and the processing direction, so as to complete the cutting operations on all wafers to be processed;

[0166] After detecting that the cutting operation is completed for all the wafers to be processed, the wafer cutting device is controlled to perform the splitting operation on the wafers to be processed according to the processing sequence and the processing direction, so as to complete the splitting operation of all the wafers to be processed.

[0167] Optionally, when the preset attachment method is diagonal attachment, there is only one wafer to be processed in the same row or column. When cutting each wafer to be processed, each wafer to be processed can be directly processed in turn. Specifically, the method of processing each wafer to be processed is the same as that in the first embodiment, and will not be repeated here.

[0168] It can be understood that when the preset attachment method is diagonal attachment, the usage of the base film and the steel ring is reduced, and the number of loading and unloading times is reduced, thereby reducing the wafer processing time and improving the wafer processing efficiency.

[0169] In an embodiment of the present application, at least two wafers are mounted on a base film, that is, a plurality of wafers to be processed are attached to the base film. After the mounting of the wafers to be processed is completed, the wafer cutting device and the wafer splitting device are controlled to process the wafers in the same row or column at the same time, which greatly reduces the number of processing times and thus improves the processing efficiency. In addition, the present application reduces the use of the base film and reduces the production cost by placing a plurality of wafers on the base film.

[0170] In addition, an embodiment of the present invention further proposes a computer-readable storage medium, on which a wafer processing program is stored. When the wafer processing program is executed by a processor, the steps of the various embodiments described above are implemented.

[0171] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or system including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or system. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or system including the element.

[0172] The serial numbers of the above embodiments of the present invention are only for description and do not represent the advantages or disadvantages of the embodiments.

[0173] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present invention is essentially or the part that contributes to the prior art can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) as described above, and includes a number of instructions for a terminal device (which can be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in each embodiment of the present invention.

[0174] The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A wafer processing method, characterized in that: Applied to wafer processing equipment, the wafer processing equipment includes a wafer cutting device and a wafer splitting device, the wafer cutting device includes a laser emitter, the wafer splitting device includes a splitting knife, and the steps of the wafer processing method include: Adhere at least two wafers to be processed to a base film fixed on a steel ring in a preset adhesion manner to complete the bonding operation of the wafers to be processed; Placing the wafer to be processed after bonding at a processing station; Dividing the to-be-processed area of ​​the to-be-processed wafer into at least two processing sub-areas; Determining the processing order of each processing sub-area according to the spacing between each processing sub-area; The step of determining the processing order of each processing sub-area according to the spacing between each processing sub-area comprises: Determining a first sub-region to be processed; Acquire the distance between the first sub-region to be processed and other processing sub-regions, and determine the other processing sub-region with the largest distance from the first sub-region to be processed as the second sub-region to be processed; Obtaining the distance between the second sub-region to be processed and other processing sub-regions except the first sub-region to be processed and the second sub-region to be processed, and determining the other processing sub-region except the first sub-region to be processed and the second sub-region to be processed which has the largest distance from the second sub-region to be processed as the third sub-region to be processed; Determine each sub-region to be processed according to the intervals between the determined sub-region to be processed and other undetermined sub-regions to be processed in turn to obtain the Nth sub-region to be processed, and determine the processing order according to the first sub-region to be processed, the second sub-region to be processed, the third sub-region to be processed to the Nth sub-region to be processed; Determine the center position of the wafer to be processed, and determine the processing direction of each processing sub-area according to the direction extending from the edge to the center position of each processing sub-area; Controlling the wafer cutting device to perform cutting operations on each of the processing sub-areas in sequence according to the processing sequence to form cutting lines on the surface of the wafer to be processed, wherein the cutting operation is performed on the processing sub-areas in a corresponding processing direction; The step of controlling the wafer cutting device to perform cutting operations on each of the processing sub-areas in sequence according to the processing sequence to form cutting lines on the surface of the wafer to be processed includes: Obtaining preset cutting patterns corresponding to respective processing sub-areas of the wafer to be processed; Controlling the laser emitter to perform a cutting operation on the first sub-region to be processed along the preset cutting lines in a processing direction corresponding to the first sub-region to be processed; After completing the cutting operation of the first sub-region to be processed, controlling the laser emitter to perform a cutting operation on the second sub-region to be processed along the preset cutting line in a processing direction corresponding to the second sub-region to be processed; Performing cutting operations on the third to-be-processed sub-region to the Nth to-be-processed sub-region in sequence to complete the cutting operation on the wafer to be processed and to form cutting lines on the surface of the wafer to be processed; Controlling the splitting knife to sequentially perform splitting operations on the cutting lines of the first sub-region to be processed in a processing direction corresponding to the first sub-region to be processed; After completing the splitting operation on all the cutting lines corresponding to the first sub-region to be processed, controlling the splitting knife to sequentially perform the splitting operation on the cutting lines of the second sub-region to be processed in the processing direction corresponding to the second sub-region to be processed; Sequentially performing a splitting operation on the third to-be-processed sub-region to the Nth to-be-processed sub-region to complete the splitting operation on the wafer to be processed, thereby completing the splitting of the wafer to be processed; The preset adhesion mode is a symmetrical matrix attachment mode, and the wafer processing method further includes: Determine the processing sub-areas corresponding to each of the wafers to be processed, and determine the processing order and processing direction corresponding to each of the wafers to be processed, wherein the processing order and processing direction corresponding to the wafers to be processed arranged in the same row and / or arranged in the same column are the same; Controlling the wafer cutting device to simultaneously perform cutting operations on the wafers to be processed arranged in the same row or the same column according to the processing sequence and the processing direction, so as to complete the cutting operations of all the wafers to be processed; After detecting that all wafers to be processed have completed the cutting operation, the wafer cutting device is controlled to simultaneously perform the splitting operation on the wafers to be processed arranged in the same row or column according to the processing sequence and the processing direction to complete the splitting operation of all wafers to be processed.

2. A wafer processing equipment, characterized in that: The wafer processing equipment includes a wafer cutting device and a wafer splitting device, and the wafer processing equipment includes: a memory, a processor, and a wafer processing program stored in the memory and executable on the processor. When the wafer processing program is executed by the processor, the steps of the wafer processing method as described in claim 1 are implemented.

3. The wafer processing equipment according to claim 2, characterized in that: The wafer cutting device comprises a laser emitter, and the wafer splitting device comprises a cleaver.

4. A storage medium, characterized in that: The storage medium stores a wafer processing program, and when the wafer processing program is executed by the processor, the steps of the wafer processing method according to claim 1 are implemented.

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