A key dimension measurement marking structure

Abstract

The present invention discloses a key dimension measurement mark structure, the structure includes a target area and a first graphic area located in the target area, the first graphic area and the target area are on different horizontal planes, wherein the first graphic area has a first measurement part and a second measurement part with different line widths, and the first measurement part and the second measurement part form an asymmetric open continuous pattern. The first measurement part and the second measurement part form an asymmetric open continuous pattern, which will not produce a closed area, which is different from the closed pattern used in the prior art, so as to solve the problem that the photoresist is easy to spill out in the closed graphic area, reduce defects, and improve the yield.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing equipment, and in particular to a key dimension measurement mark structure. Background Art

[0002] At present, in the semiconductor manufacturing process, a line width scanning electron microscope, also known as a critical dimension scanning electron microscope (CD-SEM or CDSEM), is used to measure the critical dimensions of the graphics made on the wafer. With the development of semiconductor manufacturing technology, the critical dimension (CD) of semiconductor devices is getting smaller and smaller. In order to ensure the accuracy of the graphics on the wafer after photolithography, after the pattern on the mask is transferred to the wafer through exposure and development, the wafer with the pattern will be placed on the CDSEM machine to confirm whether the size of the pattern meets the requirements of large-scale integrated circuit design, so as to understand the accuracy of photolithography.

[0003] Because the patterns and edges of the wafer with patterns are relatively rough, it is difficult to measure the large line width layer feature size (layerCD) and the implant layer feature size (Implant layer CD), which is easily interfered by large noise and causes inaccurate measurement. In view of the fact that the large line width layer feature size and the implant layer feature size are difficult to measure, CDSEM generally measures the key dimension measurement unit on the wafer to monitor the feature dimension status of this layer. Currently, the key dimension measurement unit mostly uses closed patterns such as P-type patterns and R-type patterns, which can easily cause the closed photoresist to spill out in the subsequent process, thereby causing defects; or the size design is improper and the pattern cannot be analyzed. Summary of the invention

[0004] The object of the present invention is to provide a key dimension measurement mark structure for solving the problem that the photoresist in the key dimension measurement part of the prior art is easy to spill out in the closed pattern area.

[0005] To achieve the above-mentioned purpose and other related purposes, the present invention provides a key dimension measurement mark structure, which includes a target area and a first graphic area located in the target area, wherein the first graphic area and the target area are on different horizontal planes, wherein the first graphic area has a first measurement portion and a second measurement portion with different line widths, and the first measurement portion and the second measurement portion form an asymmetric open continuous pattern.

[0006] The first graphic area can be configured to be convex or concave relative to the target area so that the first graphic area and the target area are on different horizontal planes; the first measuring part and the second measuring part in the first graphic area form an asymmetric open continuous pattern, and no closed area is generated, which is different from the closed pattern used in the prior art, so as to solve the problem that the photoresist is easy to spill out in the closed graphic area, thereby causing defects and affecting the yield.

[0007] Optionally, the target area includes a first edge extending along a first direction and a second edge extending along a second direction, the first measuring portion extends along the first edge, the second measuring portion extends along the second edge, the first measuring portion has a first height in the first direction, the second measuring portion has a second height in the second direction, and the first height is greater than or equal to the second height.

[0008] Optionally, a line width of the first measurement portion is greater than a line width of the second measurement portion.

[0009] Optionally, the first measuring portion has a first shortest distance from the first side, the second measuring portion has a second shortest distance from the second side, the first shortest distance is less than or equal to the line width of the first measuring portion, and the second shortest distance is less than or equal to the line width of the second measuring portion. Because the target area is limited, the smaller the target area is set, the better. The first graphic area is set near the edge of the target area to reserve an area for subsequent further settings such as the second graphic area.

[0010] Optionally, in the first direction, the first measuring portion has a first end, in the second direction, the second measuring portion has a second end, and the first end is connected to the second end. The first measuring portion and the second measuring portion in the first figure have a common end.

[0011] Optionally, the first height is at least four times the line width of the first measuring portion, that is, the first height is more than four times the line width of the first measuring portion, so that the height of the first measuring portion is much greater than the line width.

[0012] Optionally, the first graphic area and the target area have different light transmittances.

[0013] Optionally, the target area further includes a second graphic area, the second graphic area includes auxiliary graphic areas arranged at intervals, the auxiliary graphic area includes a first auxiliary graphic area and a second auxiliary graphic area, wherein the first auxiliary graphic area includes a plurality of first auxiliary graphics arranged at intervals, the second auxiliary graphic area includes a plurality of second auxiliary graphics arranged at intervals, and the first auxiliary graphics and the second auxiliary graphics have different line widths. The second graphic area is a dense area, and two auxiliary graphics with different line widths are set as measurement feature graphics, and multiple auxiliary graphics with different measurement characteristics are set for each measurement feature graphic, and multiple rows of auxiliary graphics with different measurement characteristics are set, which can effectively reduce or avoid the possibility of pattern destruction.

[0014] Optionally, the first auxiliary graphic and the second auxiliary graphic are on the same horizontal plane.

[0015] Optionally, the first auxiliary graphic, the second auxiliary graphic and the first graphic area are on the same horizontal plane.

[0016] Optionally, the first auxiliary graphic area and the second auxiliary graphic area are arranged at intervals along a direction parallel to the second measuring portion, and the first auxiliary graphics and the second auxiliary graphics are arranged at intervals along a direction parallel to the first measuring portion.

[0017] Optionally, line widths of the first auxiliary pattern and the second auxiliary pattern are both smaller than line widths of the first measurement portion and the second measurement portion.

[0018] Optionally, each of the first auxiliary graphics in the first auxiliary graphics area has a first interval on the same horizontal plane as the target area, and the line width of the first interval and the line width of the first auxiliary graphics are both greater than or equal to the first resolution, and each of the second auxiliary graphics in the second auxiliary graphics area has a second interval on the same horizontal plane as the target area, and the line width of the second interval and the line width of the second auxiliary graphics are both greater than or equal to the second resolution, wherein the first resolution and the second resolution are the minimum resolutions of different exposure machines. Different exposure machines have different minimum resolutions. If the size of the measurement mark structure is not appropriate, there is a risk that the pattern cannot be resolved, causing defects that affect the yield. The present invention sets two auxiliary graphics areas with appropriate measurement sizes to ensure that the exposure machine resolves the pattern, is not prone to defects, and improves the yield.

[0019] Optionally, the first graphic area and the second graphic area have the same light transmittance, and the second graphic area and the target area have different light transmittances.

[0020] Optionally, a horizontal plane at which the first graphic area is located is lower than a horizontal plane at which the target area is located.

[0021] The key dimension measurement mark of the present invention has a simple structure, and its unique structure can solve the problem that the photoresist is easy to spill out in the closed pattern area, thereby causing defects and affecting the yield. The auxiliary pattern area can effectively reduce or avoid the possibility of pattern damage. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The specific features of the invention involved in this application are shown in the attached claims. The features and advantages of the invention involved in this application can be better understood by referring to the exemplary embodiments and drawings described in detail below. A brief description of the drawings is as follows:

[0023] Figure 1 Schematic diagram of a critical dimension measurement mark structure of the present invention.

[0024] Figure 2 Another schematic diagram of the critical dimension measurement mark structure of the present invention. DETAILED DESCRIPTION

[0025] The following describes the implementation of the present application in conjunction with the specific embodiments illustrated. Those familiar with the technology can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0026] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present invention will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted. The figures shown are for display purposes only and are not limited to their dimensions.

[0027] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of the illustration to another component, these terms are used in this specification only for convenience, such as according to the direction of the examples described in the drawings. It is understood that if the device of the illustration is turned upside down, the component described as "upper" will become the component "lower". When a certain structure is "on" other structures, it may mean that the certain structure is formed integrally on the other structure, or that the certain structure is "directly" disposed on the other structure, or that the certain structure is "indirectly" disposed on the other structure through another structure.

[0028] The terms "a", "an", "the" and "said" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to indicate an open-ended inclusive meaning and mean that there may be additional elements / components / etc. in addition to the listed elements / components / etc. The terms "first" and "second" are used only as labels and are not intended to limit the quantity of their objects.

[0029] In response to the above problems, the present application provides a key dimension measurement mark structure for solving the problem that photoresist in the key dimension measurement part of the prior art is easy to spill out in the closed graphic area, reducing the risk of defects caused by photoresist spilling out and improving the yield.

[0030] like Figure 1 As shown, it is a schematic diagram of a key dimension measurement mark structure in one embodiment of the present application, the key dimension measurement mark structure 100 includes a target area 110 and a first graphic area 120 located in the target area 110, the first graphic area 120 and the target area 110 are on different horizontal planes, wherein the first graphic area 120 has a first measurement portion 121 and a second measurement portion 122 with different line widths, and the first measurement portion 121 and the second measurement portion 122 form an asymmetric open continuous pattern.

[0031] The first graphic area 120 can be configured to be convex or concave relative to the target area 110 (the target area 110 is on the wafer and is at the same horizontal plane as the wafer surface) so that the first graphic area 120 and the target area 110 are at different horizontal planes; the first measuring part 121 and the second measuring part 122 in the first graphic area 120 form an asymmetric open continuous pattern, and no closed area will be generated, which is different from the closed pattern used in the prior art, so as to solve the problem that the photoresist is easy to spill out in the closed graphic area, reduce defects, and improve the yield.

[0032] In one embodiment of the present invention, the target area 110 includes a first edge 111 extending along a first direction and a second edge 112 extending along a second direction, the first measuring portion 121 extends along the first edge 111, the second measuring portion 122 extends along the second edge 112, the first measuring portion 121 has a first height A in the first direction, the second measuring portion 122 has a second height B in the second direction, and the first height A is greater than or equal to the second height B.

[0033] In one embodiment of the present invention, the line width C of the first measuring portion 121 is greater than the line width D of the second measuring portion 122 , so that the first graphic area 120 has multiple measurement standards, and different line widths correspond to different measurement standards.

[0034] In one embodiment of the present invention, the first measuring portion 121 has a first shortest distance M from the first side 111, and the second measuring portion 122 has a second shortest distance N from the second side 112, the first shortest distance M is less than or equal to the line width C of the first measuring portion 121, and the second shortest distance N is less than or equal to the line width D of the second measuring portion 122. Because the target area 110 is limited, the smaller the target area 110 is set, the better. The first graphic area 120 is set at a place close to the edge of the target area 110, and an area is reserved for subsequent further settings such as the second graphic area 130. The target area 110 is generally set to a regular shape, for example, it may include but is not limited to a square, a rectangle, etc.

[0035] In one embodiment of the present invention, in the first direction, the first measuring portion 121 has a first end, in the second direction, the second measuring portion 122 has a second end, and the first end is connected to the second end. The first measuring portion 121 and the second measuring portion 122 in the first graphic area 120 have a common end, which may include but is not limited to an L-shaped pattern.

[0036] In one embodiment of the present invention, the first height A is at least four times the line width C of the first measuring portion 121 . That is, the first height A is four times or more the line width C of the first measuring portion 121 , so that the height A of the first measuring portion 121 is much larger than the line width C.

[0037] In one embodiment of the present invention, the first graphic area 120 and the target area 110 have different light transmittances. For example, one can be set to be a light-transmitting area and the other to be a light-impermeable area; if the first graphic area 120 is a light-transmitting area, the pattern left on the wafer after exposure will be the pattern of the first graphic area 120. Specifically, if the first graphic area 120 is a linear light-transmitting area, then the pattern formed on the wafer by the first graphic area 120 is a linear structure that is more protruding than the target area 110, and vice versa.

[0038] In one embodiment of the present invention, Figure 2As shown, the target area 110 also includes a second graphic area 130, the second graphic area 130 includes auxiliary graphic areas arranged at intervals, the auxiliary graphic areas include a first auxiliary graphic area 131 and a second auxiliary graphic area 132, wherein the first auxiliary graphic area 131 includes a plurality of first auxiliary graphics 1311 arranged at intervals, the second auxiliary graphic area 132 includes a plurality of second auxiliary graphics 1321 arranged at intervals, and the first auxiliary graphics 1311 and the second auxiliary graphics 1321 have different line widths. The second graphic area 130 is used as a dense area, some feature measurement parts are added to the dense area, two auxiliary graphics with different line widths, namely the first auxiliary graphics 1311 and the second auxiliary graphics 1321, are set as measurement feature graphics, multiple are set for each measurement feature graphic, and multiple rows of auxiliary graphics with different measurement features are set, which can effectively reduce or avoid the possibility of pattern destruction. The dense area of ​​the existing key dimension measurement part is generally composed of the same pattern distributed at equal distances, or only one row of the same pattern distributed at non-equidistant distances. In this pattern, each type of measurement feature has only one graphic, which makes the pattern have a greater risk of damage.

[0039] In one embodiment of the present invention, the first auxiliary pattern 1311 and the second auxiliary pattern 1321 are on the same horizontal plane. In this case, they can be made simultaneously in one process.

[0040] In one embodiment of the present invention, the first auxiliary pattern 1311, the second auxiliary pattern 1321 and the first pattern area 120 are on the same horizontal plane. In this case, they can be manufactured simultaneously in one process.

[0041] In one embodiment of the present invention, the first auxiliary graphic area 131 and the second auxiliary graphic area 132 are arranged at intervals along a direction parallel to the second measuring portion 122 , and the first auxiliary graphic 1311 and the second auxiliary graphic 1321 are arranged at intervals along a direction parallel to the first measuring portion 121 .

[0042] In one embodiment of the present invention, the line widths of the first auxiliary pattern 1311 and the second auxiliary pattern 1321 are both smaller than the line widths of the first measuring portion 121 and the second measuring portion 122. That is, the line width X of the first auxiliary pattern 1311 is smaller than both the line width C of the first measuring portion 121 and the line width D of the second measuring portion 122; the line width Y of the second auxiliary pattern 1321 is smaller than both the line width C of the first measuring portion 121 and the line width D of the second measuring portion 122. When the line width C of the first measuring portion 121 is larger than the line width D of the second measuring portion 122, the line width X of the first auxiliary pattern 1311 is smaller than the line width D of the second measuring portion 122; the line width Y of the second auxiliary pattern 1321 is smaller than the line width D of the second measuring portion 122. The patterns in the first pattern area 120 and the second pattern area 130 are set to different sizes, so that more measurement patterns of different measurement sizes can be obtained, which is suitable for a variety of measurement scenarios.

[0043] In one embodiment of the present invention, there is a first interval between each of the first auxiliary graphics 1311 in the first auxiliary graphics area 131, which is on the same horizontal plane as the target area 110, and the line width E of the first interval and the line width X of the first auxiliary graphics 1311 are both greater than or equal to the first resolution. There is a second interval between each of the second auxiliary graphics 1321 in the second auxiliary graphics area 132, which is on the same horizontal plane as the target area 110, and the line width F of the second interval and the line width Y of the second auxiliary graphics 1321 are both greater than or equal to the second resolution, wherein the first resolution and the second resolution are the minimum resolutions of different exposure machines. The units of the first resolution and the second resolution should be the same as the line width unit. Different exposure machines have different minimum resolutions. If the size of the measurement mark structure is not appropriate, there is a risk that the pattern cannot be resolved, resulting in defects that affect the yield. The present invention sets two auxiliary graphics areas with appropriate measurement sizes to ensure that the exposure machine resolves the pattern, is not prone to defects, and improves the yield.

[0044] In one embodiment of the present invention, the first graphic area 120 and the second graphic area 130 have the same light transmittance, and the second graphic area 130 and the target area 110 have different light transmittances, so as to obtain a pattern having the first graphic area 120 and the second graphic area 130. The second graphic area 130 may be convex or concave relative to the target area 110; from the perspective of process, it is better to make the second graphic area 130 concave relative to the target area 110. If the second graphic area 130 is convex relative to the target area 110, the second graphic area 130 will be an isolated area, and the pattern stability is slightly worse than when it is concave.

[0045] In one embodiment of the present invention, a horizontal plane where the first graphic area 120 is located is lower than a horizontal plane where the target area 110 is located, that is, the first measuring portion 121 and the second measuring portion 122 in the first graphic area 120 are recessed relative to the target area 110 .

[0046] In one embodiment of the present invention, the second graphic area 130 is preferably located within the range of the first height A of the first measurement portion 121 and the second height B of the second measurement portion 122, so as to obtain a smaller target area 110. Since the measurement pattern will eventually be formed on the wafer, the area occupied by the measurement pattern is also the area of ​​the wafer. If the measurement pattern area is too large, it will inevitably occupy the area of ​​other areas. Therefore, under the premise of reasonable use of the wafer area, the area of ​​each area in the measurement pattern area needs to be reasonably allocated to avoid unnecessary area waste.

[0047] The size of each graphic structure in the key dimension measurement mark structure 100 of the present invention can be set to a variety of sizes, and can be specifically set according to the minimum resolution of the exposure machine used and the limited requirements of the key dimension measurement mark structure 100 of the present invention, so as to expand the scope of application of the key dimension measurement mark structure 100. In one embodiment of the present application, the first measuring part 121 and the second measuring part 122 have a common end to form an L-shaped pattern. The first height A of the first measuring part 121 can be set to 2.8μm-8μm, the line width C can be set to 0.7μm-2μm, and the first height A is at least four times the line width C of the first measuring part 121. The second height B of the second measuring part 122 can be set to 6μm, and the line width D can be set to 0.3μm-0.7μm. And it needs to be satisfied that: the line width C of the first measuring part 121 is greater than the line width D of the second measuring part 122.

[0048] The first shortest distance M can be set to 0.32 μm-1 μm and is smaller than or equal to the line width C of the first measuring portion 121 . The second shortest distance N can be set to 0.32 μm-0.7 μm and is smaller than or equal to the line width D of the second measuring portion 122 .

[0049] The line width X of the first auxiliary pattern 1311 is smaller than the line width D of the second measuring portion 122, and the line width E of the first interval and the line width X of the first auxiliary pattern 1311 are both greater than or equal to the minimum resolution. The line width E of the first interval and the line width X of the first auxiliary pattern 1311 can be the same or different.

[0050] The line width Y of the second auxiliary pattern 1321 is smaller than the line width D of the second measuring portion 122, and the line width F of the second interval and the line width Y of the second auxiliary pattern 1321 are both greater than or equal to the minimum resolution. The line width F of the second interval and the line width Y of the second auxiliary pattern 1321 can be the same or different.

[0051] The first auxiliary pattern 1311 and the second auxiliary pattern 1321 have different line widths. For example, the line width X of the first auxiliary pattern 1311 may be smaller than the line width Y of the second auxiliary pattern 1321.

[0052] There are many types of exposure machines. The light source of the exposure machine may include but is not limited to KrF laser or ArF laser excimer laser. KrF laser generally has a wavelength of 248nm, and ArF laser generally has a wavelength of 193nm. In actual use, the corresponding laser is selected according to the corresponding process conditions. When the corresponding laser is selected, the corresponding photoresist needs to be selected. For example, when using Arf laser, the photoresist used is Arf layer, and when using KrF laser, the photoresist used is KrF layer. For different types of exposure machines, the key dimension measurement mark structure 100 of the present invention only needs to adjust the size of the key dimension measurement mark structure 100 according to the minimum resolution of the exposure machine used, without changing its structure, to ensure that the pattern can be resolved.

[0053] For example, for the I-line layer (ie, the photoresist layer), the minimum resolution of the exposure machine is 350 nm (0.35 μm); the line width C of the first measurement portion 121 can be set to 2 μm; and the line width D of the second measurement portion 122 can be set to 0.7 μm.

[0054] The line width X of the first auxiliary pattern 1311 may be set to be greater than or equal to 0.35 μm and less than or equal to 0.5 μm, the line width E of the first interval between the first auxiliary patterns 1311 may be set to be greater than or equal to 0.35 μm and less than or equal to 0.5 μm, and the line width E of the first interval and the line width X of the first auxiliary pattern 1311 are both greater than or equal to 0.35 μm. The line width E of the first interval and the line width X of the first auxiliary pattern 1311 may be the same or different.

[0055] The line width Y of the second auxiliary pattern 1321 can be set to be greater than 0.5 μm and less than 0.7 μm, the line width F of the second interval between each second auxiliary pattern 1321 can be set to be greater than 0.5 μm and less than 0.7 μm, and the line width F of the second interval and the line width Y of the second auxiliary pattern 1321 are both greater than or equal to 0.35 μm. The line width F of the second interval and the line width Y of the second auxiliary pattern 1321 can be the same or different.

[0056] For example, for the Krf layer, the minimum resolution of the exposure machine is 110 nm (0.11 μm); the line width C of the first measurement portion 121 can be set to 2 μm; and the line width D of the second measurement portion 122 can be set to 0.7 μm.

[0057] The line width X of the first auxiliary pattern 1311 may be set to be greater than or equal to 0.11 μm and less than or equal to 0.3 μm, the line width E of the first interval between each of the first auxiliary patterns 1311 may be set to be greater than or equal to 0.11 μm and less than or equal to 0.3 μm, and the line width E of the first interval and the line width X of the first auxiliary pattern 1311 are both greater than or equal to 0.11 μm. The line width E of the first interval and the line width X of the first auxiliary pattern 1311 may be the same or different.

[0058] The line width Y of the second auxiliary pattern 1321 can be set to be greater than 0.3 μm and less than 0.7 μm, the line width F of the second interval between each second auxiliary pattern 1321 can be set to be greater than 0.3 μm and less than 0.7 μm, and the line width F of the second interval and the line width Y of the second auxiliary pattern 1321 are both greater than or equal to 0.11 μm. The line width F of the second interval and the line width Y of the second auxiliary pattern 1321 can be the same or different.

[0059] For example, for the Arf layer, the minimum resolution of the exposure machine is 65 nm (0.065 μm); the line width C of the first measurement portion 121 can be set to 0.7 μm; and the line width D of the second measurement portion 122 can be set to 0.3 μm.

[0060] The line width X of the first auxiliary pattern 1311 may be set to be greater than or equal to 0.065 μm and less than or equal to 0.2 μm, the line width E of the first interval between each of the first auxiliary patterns 1311 may be set to be greater than or equal to 0.065 μm and less than or equal to 0.2 μm, and the line width E of the first interval and the line width X of the first auxiliary pattern 1311 are both greater than or equal to 0.065 μm. The line width E of the first interval and the line width X of the first auxiliary pattern 1311 may be the same or different.

[0061] The line width Y of the second auxiliary pattern 1321 can be set to be greater than 0.2 μm and less than 0.3 μm, the line width F of the second interval between each second auxiliary pattern 1321 can be set to be greater than 0.2 μm and less than 0.3 μm, and the line width F of the second interval and the line width Y of the second auxiliary pattern 1321 are both greater than or equal to 0.065 μm. The line width F of the second interval and the line width Y of the second auxiliary pattern 1321 can be the same or different.

[0062] Compared with the prior art, the key dimension measurement mark structure disclosed in this application can solve the problem that the photoresist is easy to spill out in the closed pattern area, thus causing defects and affecting the yield. Cooperating with the auxiliary pattern area can effectively reduce or avoid the possibility of pattern damage.

[0063] The above embodiments are merely illustrative of the principles and effects of the present application and are not intended to limit the present application. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed in the present application shall still be covered by the claims of the present application.

Claims

1. A key dimension measurement mark structure, characterized in that: The structure includes a target area and a first graphic area located in the target area, the first graphic area and the target area are located at different horizontal planes, wherein the first graphic area has a first measurement portion and a second measurement portion with different line widths, and the first measurement portion and the second measurement portion form an asymmetric open continuous pattern; The target area also includes a second graphic area, the second graphic area includes auxiliary graphic areas arranged at intervals, the auxiliary graphic area includes a first auxiliary graphic area and a second auxiliary graphic area, wherein the first auxiliary graphic area includes a plurality of first auxiliary graphics arranged at intervals, the second auxiliary graphic area includes a plurality of second auxiliary graphics arranged at intervals, the first auxiliary graphics and the second auxiliary graphics have different line widths, and the first auxiliary graphics, the second auxiliary graphics and the first graphic area are on the same horizontal plane; There is a first interval between each of the first auxiliary graphics in the first auxiliary graphics area and is on the same horizontal plane as the target area, and the line width of the first interval and the line width of the first auxiliary graphics are both greater than or equal to a first resolution. There is a second interval between each of the second auxiliary graphics in the second auxiliary graphics area and is on the same horizontal plane as the target area, and the line width of the second interval and the line width of the second auxiliary graphics are both greater than or equal to a second resolution, wherein the first resolution and the second resolution are the minimum resolutions of different exposure machines.

2. The marking structure according to claim 1, characterized in that: The target area includes a first side extending along a first direction and a second side extending along a second direction, the first measuring portion extends along the first side, the second measuring portion extends along the second side, the first measuring portion has a first height in the first direction, the second measuring portion has a second height in the second direction, and the first height is greater than or equal to the second height.

3. The marking structure according to claim 2, characterized in that: The line width of the first measurement portion is greater than the line width of the second measurement portion.

4. The marking structure according to claim 2, characterized in that: The first measuring portion has a first shortest distance from the first side, and the second measuring portion has a second shortest distance from the second side, the first shortest distance is less than or equal to the line width of the first measuring portion, and the second shortest distance is less than or equal to the line width of the second measuring portion.

5. The marking structure according to claim 2, characterized in that: In the first direction, the first measuring portion has a first end, and in the second direction, the second measuring portion has a second end, and the first end is connected to the second end.

6. The marking structure according to claim 2, characterized in that: The first height is at least four times greater than a line width of the first measuring portion.

7. The marking structure according to claim 1, characterized in that: The first graphic area and the target area have different light transmittances.

8. The marking structure according to claim 1, characterized in that: The first auxiliary pattern and the second auxiliary pattern are on the same horizontal plane.

9. The marking structure according to claim 1, characterized in that: The first auxiliary pattern area and the second auxiliary pattern area are arranged at intervals along a direction parallel to the second measuring portion, and the first auxiliary pattern and the second auxiliary pattern are arranged at intervals along a direction parallel to the first measuring portion.

10. The marking structure according to claim 1, characterized in that: The line widths of the first auxiliary pattern and the second auxiliary pattern are both smaller than the line widths of the first measurement portion and the second measurement portion.

11. The marking structure according to claim 1, characterized in that: The first graphic area and the second graphic area have the same light transmittance, and the second graphic area and the target area have different light transmittances.

12. The marking structure according to claim 1, characterized in that: The horizontal plane where the first graphic area is located is lower than the horizontal plane where the target area is located.

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