An annealing device and an annealing method

Abstract

The present application provides an annealing device and an annealing method. The annealing device includes: an annealing furnace, and an adjusting device disposed in the annealing furnace for adjusting the working parameters inside the annealing furnace, where the working parameters include temperature parameters and / or humidity parameters. Since there is an adjusting device in the annealing furnace, the working parameters inside the annealing furnace can be adjusted based on requirements, and appropriate working parameters can be provided at each stage of annealing, thereby ensuring the annealing effect.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing, and more specifically to an annealing device and an annealing method. Background Art

[0002] In the semiconductor industry, the processing of semiconductor wafers includes various heat treatments such as film formation, oxidation diffusion, modification, and annealing. In actual production, in order to obtain specific properties, ion implantation is usually performed on semiconductor wafers, and annealing treatment can eliminate the structural defects generated by ion implantation under specific working parameters, so it becomes particularly important.

[0003] In perovskite solar cells, preparing a perovskite absorption layer with high crystallinity is a prerequisite for achieving high conversion efficiency. In order to increase the grain size of perovskite, additives such as chlorides (such as MACl) are often introduced into the solution to induce perovskite crystallization, which can significantly improve the crystallization quality of perovskite. However, when introducing this additive, the subsequent annealing process usually needs to be carried out in a certain humidity environment to accelerate the escape of Cl in the film layer through water molecules. In addition, the perovskite film has different humidity requirements at different annealing stages. At the initial stage of annealing, a relatively high humidity will have an adverse effect on the film layer. It is necessary to increase the humidity after annealing for a period of time. In addition, before the end of annealing, it is necessary to anneal at a low humidity to evaporate the water vapor.

[0004] In the existing annealing process for large-area substrates, the substrate is placed on a heating table for heating. In order to achieve annealing in a certain humidity environment, the environment around the entire heating table is usually humidified. On the one hand, this humidity control method cannot meet the humidity requirements of perovskite at different annealing stages; on the other hand, due to the high temperature on the surface of the substrate, water vapor usually flows towards the direction of lower temperature and condenses on the surface of low-temperature objects, resulting in the inability to reach the desired humidity near the surface of the substrate. Summary of the Invention

[0005] In view of this, the present application provides an annealing device and an annealing method, and the solutions are as follows:

[0006] An annealing device, comprising:

[0007] An annealing furnace;

[0008] An adjusting device disposed in the annealing furnace for adjusting the working parameters inside the annealing furnace; wherein, the working parameters include temperature parameters and / or humidity parameters.

[0009] Preferably, in the above annealing device, the annealing furnace has a furnace cavity, the bottom of the furnace cavity is a heating plate that can be separated from the side wall of the furnace cavity, and the side of the heating plate facing the furnace cavity is used to place the substrate to be processed;

[0010] Among them, the adjusting device is arranged at the top of the furnace chamber and is used to adjust the working parameters of the furnace chamber.

[0011] Preferably, in the above annealing device, the annealing furnace has an isolation component, which has a first state and a second state. In the first state, in the direction from the bottom of the furnace chamber to the top of the furnace chamber, the isolation component is used to isolate the furnace chamber into a first space and a second space. In the second state, the isolation component can make the first space and the second space communicate with each other.

[0012] Preferably, in the above annealing device, the furnace chamber has opposite first side walls and second side walls;

[0013] The isolation component includes: a first sub-isolation component, one end of which is rotatably fixed to the first side wall; a second sub-isolation component, one end of which is rotatably fixed to the second side wall;

[0014] In the first state, the other end of the first sub-isolation component overlaps with the other end of the second sub-isolation component in the above direction to isolate the furnace chamber into the first space and the second space; in the second state, the first sub-isolation component rotates and fits to the first side wall, and the second sub-isolation component rotates and fits to the second side wall.

[0015] Preferably, in the above annealing device, the adjusting device includes:

[0016] A sensor component, which is used to collect the working parameters in the furnace chamber;

[0017] A control component, which is used to control the working parameters in the furnace chamber.

[0018] Preferably, in the above annealing device, the sensor component includes:

[0019] A hygrometer, which is used to collect the humidity parameters in the furnace chamber;

[0020] A thermometer, which is used to collect the temperature parameters in the furnace chamber.

[0021] Preferably, in the above annealing device, the control component includes:

[0022] A heating pipe, which is used to control the temperature parameters in the furnace chamber;

[0023] An air inlet and an air outlet located at the bottom of the furnace chamber. The air inlet is used to input humidified gas into the furnace chamber, and the air outlet is used to discharge the gas in the furnace chamber. The humidity parameters in the furnace chamber are controlled through the air inlet and the air outlet.

[0024] Preferably, in the above annealing device, it further includes:

[0025] An exhaust valve, located outside the furnace chamber and communicating with the air outlet;

[0026] An intake valve, located outside the furnace chamber and communicating with the air inlet.

[0027] Preferably, in the above annealing device, there is a sealing gasket between the heating plate and the side wall of the furnace chamber, and the sealing gasket is used to seal the furnace chamber.

[0028] Preferably, in the above annealing device, the top of the annealing furnace has a mechanical control component for controlling the relative movement of the side wall and the top of the furnace chamber with respect to the heating plate.

[0029] An annealing method includes:

[0030] Using the annealing device described in any one of the above to perform annealing treatment on the substrate to be processed.

[0031] Preferably, in the above annealing method, the substrate to be processed requires multiple annealing stages with different working parameters;

[0032] The annealing method includes:

[0033] In different annealing stages, respectively using independent said annealing devices to perform annealing treatment on the substrate to be processed;

[0034] Wherein, before the end of the previous annealing stage, the working parameters required for the subsequent annealing stage are pre-controlled by the annealing device corresponding to the subsequent annealing stage.

[0035] From the above description, it can be seen that the present application provides an annealing device and an annealing method. The annealing device includes: an annealing furnace, and an adjustment device arranged in the annealing furnace for adjusting the working parameters inside the annealing furnace. Among them, the working parameters include temperature parameters and / or humidity parameters. Since there is an adjustment device in the annealing furnace, it can adjust the working parameters inside the annealing furnace based on requirements, and appropriate working parameters can be provided in each stage of annealing, thereby ensuring the annealing effect. Description of the Drawings

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative efforts.

[0037] The structures, proportions, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those familiar with this technology to understand and read, and are not used to limit the implementation conditions of this application. Therefore, they do not have substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects that this application can produce and the purposes that can be achieved, should still fall within the scope covered by the technical content disclosed in this application.

[0038] Figure 1 is a schematic structural diagram of an annealing device provided by an embodiment of this application;

[0039] Figure 2 is Figure 1 a schematic structural diagram when the side wall and the bottom of the furnace cavity in the shown annealing device are in a separated state;

[0040] Figure 3 is Figure 1 a schematic structural diagram of the shown annealing device in the second state;

[0041] Figure 4 is a schematic structural diagram of another annealing device provided by an embodiment of this application;

[0042] Figure 5 is a schematic structural diagram of yet another annealing device provided by an embodiment of this application;

[0043] Figure 6 is Figure 5 a schematic structural diagram of the shown annealing device in the second state. Detailed implementation manners

[0044] Next, the embodiments in this application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope protected by this application.

[0045] To make the above objects, features, and advantages of this application more obvious and understandable, the following further details this application in conjunction with the drawings and specific implementation manners.

[0046] Refer to Figure 1 , Figure 1 which is a schematic structural diagram of an annealing device provided by an embodiment of this application.

[0047] In Figure 1The annealing device shown in the figure includes: an annealing furnace 13; an adjusting device 15 arranged inside the annealing furnace 13 for adjusting the working parameters inside the annealing furnace 13, where the working parameters include temperature parameters and / or humidity parameters.

[0048] Since there is an adjusting device 15 inside the annealing furnace 13, it can adjust the working parameters inside the annealing furnace 13 based on requirements, and appropriate working parameters can be provided at each stage of annealing, ensuring the annealing effect.

[0049] In the embodiment of the present application, taking the working parameters including temperature parameters and humidity parameters as an example for illustration, obviously in other ways, it can also only include one of the temperature parameters and humidity parameters.

[0050] Reference Figure 2 , Figure 2 is Figure 1 the structural schematic diagram when the side wall and the bottom of the furnace cavity in the shown annealing device are in a separated state. Among them, Figure 1 the side wall and the bottom of the furnace cavity in the figure are in a sealed state.

[0051] As Figure 1 and Figure 2 shown in the annealing device, the annealing furnace 13 has a furnace cavity 18, the bottom of the furnace cavity 18 is a heating plate 10 that can be separated from the side wall 19 of the furnace cavity, and the side of the heating plate 10 facing the furnace cavity 18 is used to place the substrate 12 to be processed; among them, the adjusting device 15 is arranged at the top of the furnace cavity 18 for adjusting the working parameters inside the furnace cavity 18.

[0052] The heating plate 10 can be separated from the side wall 19 of the furnace cavity, which is convenient for placing and taking out the substrate 12 to be processed. The heating plate 10 fixes the substrate 12 to be processed by means of vacuum adsorption, ensuring that during the annealing process, the substrate 12 to be processed can always be attached to the heating plate 10, providing a more uniform and stable heating effect.

[0053] Reference Figure 3 , Figure 3 is Figure 1 the structural schematic diagram when the annealing device shown is in the second state, where Figure 1 is the schematic diagram when the annealing device is in the first state. The isolation component 14 has a first state and a second state. In the first state, in the direction from the bottom of the furnace cavity 18 to the top of the furnace cavity 18, the isolation component 14 is used to isolate the furnace cavity 18 into a first space 18a and a second space 18b. In the second state, the isolation component 14 can make the first space 18a and the second space 18b communicate.

[0054] When the annealing furnace 13 is equipped with the isolation component 14 inside, when the substrate 12 to be processed is subjected to the previous process, the isolation component 14 can be adjusted to the first state, the working parameters in the first space are preset, and the working parameters in the first space are adjusted to the set value. After the substrate 12 to be processed completes the previous process, the bottom of the furnace chamber 18 can be separated, and after the substrate 12 to be processed is placed on the surface of the heating plate 10, the heating plate 10 and the side wall 19 are connected to seal the furnace chamber 18, and then the isolation component 14 is controlled to be in the second state. On the one hand, the waiting time for adjusting the working parameters to the required target working parameters is reduced, and the working efficiency is improved. On the other hand, after switching from the first state to the second state, the substrate 12 to be processed can quickly be in the target working parameters or approximately in the target working parameter environment, ensuring the annealing quality.

[0055] Among them, the set value is greater than the target working parameter, so that after switching to the second state, when the first space 18a and the second space 18b are connected, the space inside the entire furnace chamber 18 is the same as or close to the working parameter and the target working parameter. When in the second state, the working parameters can be adjusted through the adjusting device to reach the target working parameter. The difference between the temperature parameter in the set value and the target temperature parameter, and the difference between the humidity parameter in the set value and the target humidity parameter can be set based on the relative sizes of the first space 18a and the second space 18b.

[0056] Optionally, the ratio of the volume V1 of the first space 18a to the volume V2 of the second space 18b can be set to be greater than 10. When the ratio of the first space 18a to the second space 18b is greater than 10, when the first space 18a and the second space 18b are connected, the fluctuations of the working parameters generated during the temperature and humidity exchange of the gas in the furnace chamber are smaller.

[0057] In the embodiment of the present application, the furnace chamber 18 has opposite first side wall 191 and second side wall 192; the isolation component 14 inside the furnace chamber includes: a first sub-isolation component 141, one end of the first sub-isolation component 141 is rotatably fixed to the first side wall 191; a second sub-isolation component 142, one end of the second sub-isolation component 142 is rotatably fixed to the second side wall 192; in the first state, the other end of the first sub-isolation component 141 overlaps with the other end of the second sub-isolation component 142 in the direction to isolate the furnace chamber 18 into the first space 18a and the second space 18b, and in the second state, the first sub-isolation component 141 rotates and fits to the first side wall 191, and the second sub-isolation component 142 rotates and fits to the second side wall 192.

[0058] The first sub-isolation component 141 and the first side wall 191 are connected by a rotating shaft, and the second sub-isolation component 142 is connected to the second side wall 192 by a rotating shaft. The first sub-isolation component 141 and the second sub-isolation component 142 can be independently controlled to open and close, and the rotating shaft can fix the isolation component 14 at any position, and the opening degree of the isolation component 14 can be controlled according to requirements.

[0059] Reference Figure 4 , Figure 4 FIG. is a schematic structural diagram of another annealing device provided by an embodiment of the present application. In this way, the first sub-isolation component 141 of the isolation component 14 and the second sub-isolation component 142 are overlapped, the first sub-isolation component 141 can move horizontally relative to the second sub-isolation component 142, and the second sub-isolation component 142 is horizontally fixed on the second side wall 192. By moving the first sub-isolation component 141. Similarly, the switching control between the first state and the second state can be realized.

[0060] Reference Figure 5 and Figure 6 , Figure 5 FIG. is a schematic structural diagram of yet another annealing device provided by an embodiment of the present application. Figure 6 is Figure 5 a schematic structural diagram of the annealing device shown in the second state, where Figure 5 FIG. shows a schematic diagram of the annealing device in the first state. Among them, the isolation component 14 includes a plurality of foldable isolation plates. In Figure 5 , the plurality of isolation plates in the isolation component 14 are unfolded and in the first state, isolating the first space 18a from the second space 18b. When the plurality of isolation plates of the isolation component 14 are folded together and in the second state, referring to Figure 6 , the first space 18a and the second space 18b are more greatly connected, and when adjusting the working parameters in the furnace chamber 18 subsequently, the substrate 12 to be processed can be covered more quickly. Through the unfolding and folding of the plurality of isolation plates of the isolation component 14, the transformation from the first state to the second state is realized, and the opening degree of the isolation component 14 can be adjusted according to requirements.

[0061] In the annealing device according to the embodiment of the present application, the adjusting device 15 includes: a sensor component 152 for collecting the working parameters in the furnace chamber 18, and a control component 151 for controlling the working parameters in the furnace chamber 18.

[0062] The annealing device described in the embodiments of the present application can preset the working parameters before the annealing process. After completing the presetting of the working parameters, the substrate 12 to be processed is placed, the side wall 19 of the furnace body is abutted and sealed with the heating plate 10, the isolation component 14 is opened, and the annealing starts.

[0063] It should be noted that when the annealing is divided into multiple stages, multiple annealing devices can be used to anneal the substrate 12 to be processed under corresponding working parameters respectively, so that appropriate working parameters can be used for annealing in different annealing stages.

[0064] In the above embodiment, the sensor component 152 can detect the working parameters in the furnace cavity. The sensor component 152 includes: a hygrometer 152b for collecting the humidity parameter in the furnace cavity 18; a thermometer 152a for collecting the temperature parameter in the furnace cavity 18.

[0065] The sensing end of the hygrometer 152b is located inside the furnace cavity 18 for collecting the humidity in the furnace cavity 18, while the display end of the hygrometer 152b is located outside the furnace cavity 18. Similarly, the sensing port of the thermometer 152a is also located inside the furnace cavity 18, and there is also a display end outside the furnace cavity 18. It can monitor the working parameters in the furnace cavity 18 to facilitate further adjustment of the inside of the furnace cavity 18 according to the shown working parameters.

[0066] The control component 151 includes: a heating tube 151a for controlling the temperature parameter in the furnace cavity 18; an air inlet 151b and an air outlet 151c located at the bottom of the furnace cavity 18. The air inlet 151b is used to input humidified gas into the furnace cavity 18, and the air outlet 151c is used to discharge the gas in the furnace cavity 18. The humidity parameter in the furnace cavity 18 is controlled through the air inlet 151b and the air outlet 151c.

[0067] Among them, the heating tube 151a is located inside the furnace chamber 18, capable of heating the furnace chamber 18 to a preset temperature and capable of real-time adjustment according to the temperature parameters collected by the thermometer 152a. The air inlet 151b and the air outlet 151c are used in cooperation to adjust the humidity inside the furnace chamber 18 according to preset parameters. It should be noted that the air inlet 151b is not only capable of inputting humidifying gas into the furnace chamber 18. When the humidity inside the furnace chamber 18 is greater than the preset humidity parameter, the air inlet 151b will input dry gas into the furnace chamber 18 to reduce the humidity inside the furnace chamber 18 to the preset humidity. And because of the air inlet 151b, inert gas (such as Ar and N2, etc.) can be filled into the furnace chamber 18 to prevent reaction with some gases in the air during the annealing process and affect the performance of the material. It should be noted that when the substrate 12 to be processed needs to react with a gas during the annealing process, the gas can be directly filled into the furnace chamber 18.

[0068] When using the above control component 151 to adjust the working parameters in the first space 18a, usually the temperature parameter is adjusted first to form a uniform temperature field inside the first space 18a, and then the humidity parameter is adjusted to prevent the humidifying gas from moving towards the direction with lower temperature, improving the problem of condensate water generated due to uneven internal temperature and then affecting the annealing effect.

[0069] The annealing device further includes: an exhaust valve 172, located outside the furnace chamber 18 and communicated with the air outlet 151c; an intake valve 171, located outside the furnace chamber 18 and communicated with the air inlet 151b.

[0070] After having the exhaust valve 172 and the intake valve 171, the humidity adjustment inside the furnace chamber 18 becomes more precise, and the input amount of the humidifying gas can be controlled to ensure that the gap between the final humidity and the preset humidity parameter becomes smaller or even consistent. When the isolation component 14 is in the first state, closing both the exhaust valve 172 and the intake valve 171 can provide a sealed first space 18a. Thus, the heating efficiency in the first space 18a is ensured.

[0071] At the same time, because of the exhaust valve 172 and the intake valve 171, when adjusting the working parameters in the first space 18a, the humidity parameter can be adjusted first. After the humidity parameter in the first space 18a reaches the preset value, the intake valve 171 and the exhaust valve 172 are closed, and then the temperature parameter in the first space 18a is adjusted, thereby improving the efficiency of adjusting the working parameters.

[0072] In the annealing device introduced in the above application embodiment, there is a sealing gasket 11 between the heating plate 10 and the side wall 19 of the furnace cavity 18, and the sealing gasket 11 is used to seal the furnace cavity 18.

[0073] It can be understood that after adding the sealing gasket 11 between the side wall 19 of the furnace and the heating plate 10, it can be ensured that the inside of the furnace cavity 18 formed after the two are connected is airtight. And the sealing gasket 11 can be present on the heating plate 10 or on the side wall 19, and at the same time, the sealing gasket 11 is heat-resistant.

[0074] Among them, for the furnace cavity 18, a device is also required to control the separation of the side wall 19 and the heating plate 10. There is a mechanical control component 16 at the top of the annealing furnace 13, which is used to control the relative movement of the side wall 19 and the top of the furnace cavity 18 with respect to the heating plate 10.

[0075] After having a mechanical control component 16, when operating on the substrate 12 to be processed, the mechanical control component 16 can be used to separate the heating plate 10 from the side wall 19 for operation, reducing the risk.

[0076] This application also provides an annealing method, in which the device in any of the above embodiments is adopted to perform annealing treatment on the substrate 12 to be processed.

[0077] In the embodiment of this application, taking the annealing of perovskite batteries as an example, the annealing method is introduced:

[0078] Step S1, introduce humidified gas into the first space 18a and heat it to reach the set temperature parameter T1 and humidity parameter R1.

[0079] Step S2, heat the substrate 12 to be processed. After reaching the set temperature, the heating plate 10 is connected to the side wall 19.

[0080] It should be noted that heating the substrate 12 to be processed at this time is the first stage of annealing. At this time, the humidity requirement is not high, and the isolation component 14 can be in the closed state. Among them, steps S1 and S2 can be carried out synchronously.

[0081] Step S3, open the isolation component 14 and continue annealing.

[0082] This step corresponds to the second stage of annealing, which requires a relatively humid environment. When the isolation component 14 is opened, the internal gases are quickly mixed. Since the volume of the first space 18a is more than ten times that of the second space 18b, the humidity still meets the annealing requirements after mixing.

[0083] Step S4, open the intake valve 171 and the exhaust valve 172, and continue annealing.

[0084] This step corresponds to the last stage of annealing, which should be carried out in an environment with lower humidity. Therefore, open the intake valve 171 and the exhaust valve 172. Then, the low-humidity gas is introduced into the cavity through the air inlet 151b, and the gas with higher humidity in the furnace cavity is discharged through the air outlet 151c until the set humidity parameter R2 is reached.

[0085] In the above embodiment, an annealing method is introduced, in which the substrate 12 to be processed requires multiple annealing stages with different working parameters; the annealing method includes: in different annealing stages, the annealing device is used to anneal the substrate 12 to be processed separately; wherein, before the end of the previous annealing stage, the working parameters required for the next annealing stage are pre-controlled by the annealing device corresponding to the next annealing stage.

[0086] By equipping with multiple annealing devices, the working parameters required for the next annealing stage can be adjusted in another annealing device during the process of the previous annealing stage. It should be noted that the adjustment needs to be carried out when the isolation component 14 is in the first state. After the previous annealing stage is completed, connect one of the heating plates to the side wall 19 of another annealing device, and set the isolation component 14 to the second state, and continue annealing. Thus, the problem of temperature and humidity mismatch at the beginning of the next annealing stage after the end of one annealing stage is solved, and the yield rate and annealing efficiency are greatly improved. The connection between the heating plate and another annealing device is completed by the mechanical control component 16 introduced above. The mechanical control component 16 can move the side wall 19 and the top of one annealing furnace 13, and move the side wall 19 and the top of another annealing furnace 13 onto the heating plate 10 and connect them.

[0087] In this application, taking the annealing of perovskite batteries as an example, the annealing device and its method of this application are described. It should be noted that the annealing device and its method of this application are not limited to annealing perovskite batteries, and can also be used in annealing application scenarios such as silicon carbide devices and single crystal silicon devices.

[0088] In this specification, each embodiment is described in a progressive, or parallel, or a combination of progressive and parallel ways. The key point of each embodiment is to illustrate the differences from other embodiments. The same or similar parts between each embodiment can be referred to each other. For the annealing method disclosed in the embodiment, since it corresponds to the annealing device disclosed in the embodiment, the description is relatively simple. For the relevant parts, refer to the description of the annealing device part.

[0089] It should be noted that in the description of the present application, it should be understood that the descriptions of the figures and embodiments are illustrative rather than restrictive. The same figure reference numerals throughout the embodiments of the specification identify the same structures. Additionally, for the sake of understanding and ease of description, some layers, films, panels, regions, etc. may be exaggerated in thickness in the figures. At the same time, it can be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element can be directly on the other element or there may be intervening elements. Additionally, "on" means positioning the element on or below another element, but does not inherently mean positioning on the upper side of another element according to the direction of gravity.

[0090] The orientation or positional relationship indicated by terms such as "upper", "lower", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be intervening components present at the same time.

[0091] It should also be noted that in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including", or any other variation thereof is intended to cover non-exclusive inclusion, such that an article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such article or device. Without further limitation, an element defined by the statement "comprising one..." does not exclude the presence of additional identical elements in the article or device comprising the above elements.

[0092] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to these embodiments shown herein, but rather is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An annealing device, characterized in that, Comprising: Annealing furnace; The annealing furnace has a furnace chamber, the bottom of the furnace chamber is a heating plate separable from the side wall of the furnace chamber, and the side of the heating plate facing the furnace chamber is for placing the substrate to be processed; the top of the annealing furnace has a mechanical control component for controlling the relative movement of the side wall and the top of the furnace chamber with respect to the heating plate; An adjusting device provided in the annealing furnace and provided at the top of the furnace chamber for adjusting the working parameters in the furnace chamber; wherein, the working parameters include temperature parameters and / or humidity parameters; The annealing furnace has an isolation component, the isolation component has a first state and a second state, in the first state, in the direction from the bottom of the furnace chamber to the top of the furnace chamber, the isolation component is used to isolate the furnace chamber into a first space and a second space, and in the second state, the isolation component can make the first space and the second space communicate; The furnace chamber has opposite first side wall and second side wall; the isolation component includes: a first sub-isolation component, one end of the first sub-isolation component is rotatably fixed to the first side wall; a second sub-isolation component, one end of the second sub-isolation component is rotatably fixed to the second side wall; in the first state, the other end of the first sub-isolation component overlaps with the other end of the second sub-isolation component in the direction to isolate the furnace chamber into the first space and the second space; in the second state, the first sub-isolation component rotates and fits to the first side wall, and the second sub-isolation component rotates and fits to the second side wall.

2. The annealing device according to claim 1, characterized in that, The adjusting device includes: A sensor component for collecting the working parameters in the furnace chamber; A control component for controlling the working parameters in the furnace chamber.

3. The annealing device according to claim 2, wherein The sensor component includes: A hygrometer for collecting the humidity parameters in the furnace chamber; A thermometer for collecting the temperature parameters in the furnace chamber.

4. The annealing device according to claim 2, characterized in that, The control component includes: A heating tube for controlling the temperature parameters in the furnace chamber; An air inlet and an air outlet located at the bottom of the furnace chamber, the air inlet is for inputting humidified gas into the furnace chamber, and the air outlet is for discharging the gas in the furnace chamber, and the humidity parameters in the furnace chamber are controlled through the air inlet and the air outlet.

5. The annealing device according to claim 4, wherein Further comprising: An exhaust valve located outside the furnace chamber and communicated with the air outlet; An inlet valve located outside the furnace chamber and communicated with the air inlet.

6. The annealing device according to claim 1, characterized in that, A sealing gasket is provided between the heating plate and the side wall of the furnace chamber, and the sealing gasket is used to seal the furnace chamber.

7. An annealing method, characterized in that, Comprising: Annealing the substrate to be processed by using the annealing device according to any one of claims 1-6.

8. The annealing method according to claim 7, characterized in that, The substrate to be processed requires annealing stages with different working parameters; The annealing method includes: In different annealing stages, annealing the substrate to be processed by using independent annealing devices respectively; Wherein, before the end of the previous annealing stage, the working parameters required for the subsequent annealing stage are pre-controlled by the annealing device corresponding to the subsequent annealing stage.

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