Liquid supply mechanism, substrate processing apparatus, and substrate processing method

Abstract

The liquid supply mechanism has a nozzle that ejects a treatment liquid toward a substrate, a supply flow path that supplies the treatment liquid to the nozzle, a valve that adjusts flow in the supply flow path, and a buffer portion that temporarily stores the treatment liquid in an internal space of the buffer portion midway from the valve toward the nozzle.

Description

Technical Field

[0001] This disclosure relates to a liquid supply mechanism, a substrate processing apparatus, and a substrate processing method. Background Technology

[0002] Patent Document 1 discloses a technique for supplying resist to a substrate via a supply path and a nozzle. In the supply path, a pneumatic valve and a backflow valve, which serve as on / off valves, are sequentially arranged from the upstream side to the downstream side.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-139665 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] One aspect of this disclosure provides a technique for preventing particles generated by valve operation from adhering to a substrate.

[0008] Solution for solving the problem

[0009] One aspect of the liquid supply mechanism disclosed herein includes: a nozzle that sprays a processing liquid onto a substrate; a supply flow path that supplies the processing liquid to the nozzle; a valve that adjusts the flow in the supply flow path; and a buffer that temporarily stores the processing liquid in its internal space midway from the valve toward the nozzle.

[0010] The effects of the invention

[0011] According to one aspect of this disclosure, it is possible to prevent particles generated by valve operation from adhering to the substrate. Attached Figure Description

[0012] Figure 1 This is a diagram illustrating a substrate processing apparatus according to one embodiment.

[0013] Figure 2 This is a flowchart illustrating a substrate processing method according to one embodiment.

[0014] Figure 3 This is a timing diagram illustrating a substrate processing method according to one embodiment.

[0015] Figure 4 The diagrams show the positions of the particles according to one embodiment: (A) shows the position at the beginning of step S2, (B) shows the position at the end of step S2, and (C) shows... Figure 3 The diagram shows the position midway through step S5.

[0016] Figure 5 The diagrams shown are of the state of the buffer section according to one embodiment, (A) is a diagram showing the state in step S2, and (B) is a diagram showing the state in step S5.

[0017] Figure 6 (A) is a diagram showing the state of the buffer section involved in the first modified example, and (B) is a diagram showing the state in step S2.

[0018] Figure 7 The diagrams shown are: (A) showing the state of the buffer section involved in the second variation; (B) showing the state in step S5.

[0019] Figure 8 This is a diagram showing the buffer section involved in the third variation.

[0020] Figure 9 This is a diagram showing the buffer section involved in the fourth variation.

[0021] Figure 10 This is a diagram illustrating the recycling flow path and return flow path involved in one embodiment.

[0022] Figure 11 This is a diagram showing the buffer section involved in the modified example. Detailed Implementation

[0023] Embodiments of this disclosure will now be described with reference to the accompanying drawings. Furthermore, sometimes the same reference numerals are used to label the same or corresponding structures in the various drawings, and descriptions are omitted.

[0024] First, refer to Figure 1 The substrate processing apparatus 1 will now be described. The substrate processing apparatus 1 processes the substrate W using a processing liquid L. The substrate W may include, for example, a silicon wafer or a compound semiconductor wafer. Alternatively, the substrate W may be a glass substrate. The substrate processing apparatus 1 includes a liquid processing unit 2 and a control unit 9.

[0025] The liquid processing unit 2 includes: a processing container 21 for housing a substrate W; a holding disk 22 for holding the substrate W inside the processing container 21; a rotating mechanism 23 for rotating the holding disk 22; and a liquid supply mechanism 24 for supplying processing liquid L to the substrate W held by the holding disk 22.

[0026] The holding disk 22 holds the substrate W horizontally, for example, with the substrate surface Wa facing upwards. The holding disk 22... Figure 1 The middle part is a mechanical holding plate, but it can also be a vacuum holding plate or an electrostatic holding plate, etc.

[0027] The rotating mechanism 23 rotates the holding disk 22. The rotation axis 22a of the holding disk 22 is vertically arranged. The holding disk 22 holds the substrate W in such a way that the center of the substrate surface Wa is aligned with the rotation center line of the holding disk 22.

[0028] The liquid supply mechanism 24 has a nozzle 25 for spraying processing liquid L onto the substrate W. The nozzle 25 sprays the processing liquid L onto the substrate W held by the holding plate 22. The nozzle 25 is positioned above the holding plate 22 and sprays the processing liquid L onto the substrate W from above. The processing liquid L is supplied to the center of the rotating substrate surface Wa and forms a liquid film by spreading radially throughout the substrate surface Wa through centrifugal force.

[0029] In this embodiment, a processing liquid L is supplied to the substrate surface Wa, but multiple processing liquids L may be supplied to the substrate W in a predetermined order. For example, a pharmaceutical solution, a rinsing solution, and a drying solution may be supplied sequentially as the processing liquid L. First, a liquid film of the pharmaceutical solution is formed on the substrate surface Wa. Then, the liquid film of the pharmaceutical solution is replaced by a liquid film of the rinsing solution. After that, the liquid film of the rinsing solution is replaced by a liquid film of the drying solution.

[0030] The chemical solution is supplied to the center of the rotating substrate surface Wa, and the entire substrate surface Wa is treated by centrifugal force diffusing radially throughout Wa. The chemical solution is not particularly limited, and examples include DHF (dilute hydrofluoric acid), SC-1 (an aqueous solution containing ammonium hydroxide and hydrogen peroxide), and SC-2 (an aqueous solution containing hydrogen chloride and hydrogen peroxide). The chemical solution can be either alkaline or acidic. Multiple chemical solutions can also be supplied sequentially; in this case, a rinsing solution film is formed between the formation of the liquid film of the first chemical solution and the formation of the liquid film of the second chemical solution.

[0031] The rinsing solution is supplied to the center of the rotating substrate surface Wa, and the residual drug solution on the substrate surface Wa is rinsed off by centrifugal force spreading radially throughout the substrate surface Wa, forming a liquid film of the rinsing solution on the substrate surface Wa. Pure water, such as DIW (deionized water), is used as the rinsing solution.

[0032] A drying solution is supplied to the center of the rotating substrate surface Wa, and centrifugal force diffuses it radially throughout the substrate surface Wa to wash away any remaining rinsing solution, forming a liquid film of the drying solution on the substrate surface Wa. A drying solution with a surface tension lower than that of the rinsing solution is used. This helps to suppress the collapse of the raised or recessed pattern caused by surface tension. The drying solution can be, for example, an organic solvent such as IPA (isopropanol).

[0033] After the formation of the drying liquid film, the supply position of the drying liquid can be moved from the center of the substrate surface Wa towards the periphery. An opening is formed in the center of the drying liquid film, and this opening gradually expands from the center of the substrate surface Wa towards the periphery.

[0034] Multiple treatment liquids L can be sprayed from multiple nozzles 25 or from the same nozzle 25.

[0035] The liquid supply mechanism 24 has a supply flow path 26 for supplying the processing liquid L to the nozzle 25. The nozzle 25 is provided at the downstream end of the supply flow path 26. In addition, the liquid supply mechanism 24 has, for example, an on / off valve 27 and a flow regulating valve 28 as valves for adjusting the flow in the supply flow path 26.

[0036] When the on / off valve 27 opens the supply path 26, the nozzle 25 ejects the treatment fluid L. Its flow rate is controlled by the flow regulating valve 28. Conversely, when the on / off valve 27 closes the supply path 26, the nozzle 25 stops ejecting the treatment fluid L.

[0037] The flow regulating valve 28 is, for example, a constant pressure valve. The flow rate of the processed fluid through the constant pressure valve is controlled by the pressure supplied from the electro-pneumatic regulator to the operating port of the constant pressure valve. A flow meter 29 is provided in the supply flow path 26, and the flow regulating valve 28 is controlled so that the detected value of the flow meter 29 becomes the target value.

[0038] The on / off valve 27 and the flow regulating valve 28 can be integrated. Multiple integrated valves are referred to as a valve unit. Alternatively, the on / off valve 27 and the flow regulating valve 28 can be installed separately; in this case, a flow meter 29 can be installed between the on / off valve 27 and the flow regulating valve 28. The order of the on / off valve 27, the flow regulating valve 28, and the flow meter 29 is not particularly limited.

[0039] Various valves 27 and 28 are arranged in the supply flow path 26 as described above. When these valves 27 and 28 are activated, sliding occurs between the mechanical components constituting the valves 27 and 28, generating... Figure 4 The particle P1 shown in (A) flows together with the treatment liquid L and is ejected from nozzle 25.

[0040] Furthermore, the number of valves installed in the supply flow path 26 is not limited to two; it can be one or more. Additionally, the type of valve installed in the supply flow path 26 is not limited to on / off valves and flow regulating valves. For example, directional switching valves or pressure regulating valves can also be installed. Any valve could potentially become a source of particulate P1 generation.

[0041] Therefore, the liquid supply mechanism 24 of this embodiment has a buffer section 30 that temporarily accumulates the processing liquid L midway from the valves 27 and 28 toward the nozzle 25. The buffer section 30 temporarily accumulates the processing liquid L in its internal space 31, such as... Figure 4 As shown in (B), the particles P1 are temporarily trapped in the internal space 31. Therefore, the spraying of the processing liquid L onto the substrate W can be stopped before the particles P1 are ejected from the nozzle 25. Thus, the adhesion of the particles P1 to the substrate W can be suppressed.

[0042] Furthermore, when there are multiple valves, if a buffer portion 30 is provided downstream of at least one valve, the adhesion of particles P1 to the substrate W can be suppressed. However, when there are multiple valves, it is preferable to provide the buffer portion 30 downstream of all valves. Details of the buffer portion 30 will be described later.

[0043] like Figure 1 As shown, the liquid processing unit 2 has a cup 40 for recovering the processing liquid L supplied to the substrate W. The cup 40 contains the substrate W held by the holding plate 22 and recovers the processing liquid L that is thrown off the substrate W. A drain pipe 41 and an exhaust pipe 42 are provided at the bottom of the cup 40. The drain pipe 41 discharges the liquid accumulated inside the cup 40. In addition, the exhaust pipe 42 discharges the gas inside the cup 40.

[0044] Additionally, the liquid treatment unit 2 has a nozzle slot 45 for the nozzle 25 to standby. The nozzle slot 45 is located outside the cup 40 and receives the treatment liquid L ejected from the nozzle 25. Particles P1 generated by the operation of valves 27 and 28 are ejected from the nozzle 25 into the nozzle slot 45 along with the treatment liquid L.

[0045] Additionally, the liquid treatment unit 2 has a moving mechanism 46 for moving the nozzle 25. The moving mechanism 46 moves the nozzle 25 radially along the substrate W. The moving mechanism 46 has, for example, a rotating arm 46a that holds the nozzle 25 and a rotating mechanism (not shown) that rotates the rotating arm 46a. The rotating mechanism can also be used as a mechanism for raising and lowering the rotating arm 46a. The rotating arm 46a is horizontally arranged, holding the nozzle 25 at one end in the long side direction, and rotating the nozzle 25 about a rotation axis extending downward from the other end in the long side direction. Alternatively, the moving mechanism 46 can have a guide rail and a linear motion mechanism instead of the rotating arm 46a and the rotating mechanism. The guide rail is horizontally arranged, and the linear motion mechanism moves the nozzle 25 along the guide rail. The moving mechanism 46 only needs to keep the nozzle 25 at the processing position NP1 (e.g., at the point where the processing liquid L is sprayed onto the substrate W) Figure 1 The position indicated by the solid line in the middle) and the standby position NP0 for spraying treatment fluid from the nozzle slot 45 (e.g., in Figure 1 You can move between the positions indicated by the dotted lines.

[0046] The control unit 9 controls the rotating mechanism 23, the liquid supply mechanism 24, the moving mechanism 46, etc. The control unit 9 may be, for example, a computer. Figure 2 As shown, the device includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs for controlling various processes executed in the board processing apparatus 1. The control unit 9 controls the operation of the board processing apparatus 1 by causing the CPU 91 to execute the programs stored in the storage medium 92.

[0047] Next, refer to Figure 2 and Figure 3 This will explain the substrate processing method. Figure 2 and Figure 3 The substrate processing method shown is implemented under the control of the control unit 9. Figure 2 Steps S1 to S5 shown are repeated. The series of processes consisting of steps S1 to S5 will be referred to as a cycle.

[0048] First, in step S1, a conveying device (not shown) moves the substrate W into the processing container 21. After placing the substrate W on the holding tray 22, the conveying device withdraws from the processing container 21. The holding tray 22 receives the substrate W from the conveying device and holds the substrate W.

[0049] Next, the rotating mechanism 23 rotates the substrate W together with the holding disk 22, and the moving mechanism 46 moves the nozzle 25 from the standby position NP0 to the processing position NP1. During this period, the nozzle 25 does not spray the processing liquid L.

[0050] Next, in step S2, nozzle 25 supplies processing liquid L to the center of the rotating substrate surface Wa, forming a liquid film of processing liquid L across the entire substrate surface Wa. Specifically, in Figure 3 At time t1, the opening / closing valve 27 opens the supply flow path 26, and the flow regulating valve 28 adjusts the ejection flow rate of the nozzle 25 to the preset flow rate FR1. For example... Figure 4 As shown in (A), particulate P1 is sometimes generated due to the operation of these valves 27, 28.

[0051] Furthermore, particles P1 can also be generated at the end of step S5 in the previous cycle. At the end of step S5, the on / off valve 27 closes the supply flow path 26, and the flow regulating valve 28 adjusts the ejection flow rate of the nozzle 25 to zero. The operation of these valves 27 and 28 also generates particles P1. Until the start of step S2 in the current cycle, the particles P1 generated at the end of step S5 in the previous cycle do not move. This is because, prior to that, the processing fluid L does not flow along the supply flow path 26.

[0052] At the start of step S2 (time t1), when the opening / closing valve 27 opens the supply flow path 26, the processing liquid L begins to flow along the supply flow path 26. As a result, the particles P1 are flushed away by the processing liquid L and begin to move from valves 27 and 28 toward nozzle 25. A buffer section 30 is provided midway from valves 27 and 28 toward nozzle 25.

[0053] The buffer section 30 temporarily traps the particles P1 within the internal space 31 by temporarily storing the processing liquid L within the internal space 31. In this state, the processing liquid L can be sprayed onto the substrate W, thus suppressing the ejection of particles P1 onto the substrate W. Therefore, the adhesion of particles P1 to the substrate W can be suppressed.

[0054] At the end of step S2 (time t2), the on / off valve 27 closes the supply path 26, and the flow adjustment valve 28 adjusts the ejection flow rate of the nozzle 25 to zero. At this time, as... Figure 4 As shown in (B), the particle P1 does not reach the nozzle 25, but is captured, for example, in the internal space 31 of the buffer section 30.

[0055] The volume of the internal space 31 is, for example, larger than the total amount of processing liquid L ejected from the nozzle 25 in step S2 of one cycle. The total amount can be determined by integrating the flow rate over time. The large volume of the internal space 31 allows for the processing of the substrate W using the clean processing liquid L accumulated in the internal space 31 before the start of step S2. Furthermore, as... Figure 4 As shown in (A), at the beginning of step S2, particle P1 is located upstream of buffer section 30.

[0056] The internal space 31 of the buffer section 30 is, for example, cylindrical. The inner diameter of the buffer section 30 is larger than the inner diameter of the supply flow path 26. This allows for a larger volume per unit length compared to the case where the inner diameters of the buffer section 30 and the supply flow path 26 are the same. Furthermore, if the length of the buffer section 30 is long, its inner diameter can also be the same as that of the supply flow path 26. The buffer section 30 only needs to have a volume larger than the total amount of treatment liquid L ejected from the nozzle 25 in step S2 of one cycle.

[0057] Next, in step S3, the rotating mechanism 23 rotates the substrate W together with the holding disk 22, and the processing liquid L is thrown off the substrate W by centrifugal force to dry the substrate W. Figure 3 The rotational speed in step S3 is the same as that in step S2, but it can also be greater than that in step S2. At the end of step S3, the rotating mechanism 23 stops the rotation of the holding disk 22.

[0058] Next, in step S4, a conveying device (not shown) enters the interior of the processing container 21, receives the substrate W from the holding tray 22, and moves the received substrate W out of the processing container 21. Thus, the processing of the substrate W is completed.

[0059] like Figure 3 As shown, step S5 can also be performed during steps S3 and S4 described above. Performing multiple processes simultaneously can increase productivity. Step S5 is performed after the moving mechanism 46 moves the nozzle 25 from the processing position NP1 to the standby position NP0. The nozzle 25 does not spray the processing liquid L during the movement.

[0060] In step S5, nozzle 25 sprays treatment liquid L into nozzle slot 45. Specifically, in Figure 3 At time t3, the opening and closing valve 27 opens the supply flow path 26, and the flow regulating valve 28 adjusts the ejection flow of the nozzle 25 to the preset flow rate FR2.

[0061] When the on / off valve 27 opens the supply flow path 26, the processing liquid L begins to flow along the supply flow path 26. As a result, the particles P1 are flushed away by the processing liquid L and begin to move from the buffer section 30 toward the nozzle 25. Then, as... Figure 4 As shown in (C), the particle P1 is ejected from the nozzle 25 into the nozzle slot 45.

[0062] In step S5, not only the aforementioned particles P1, but also particles P2 are ejected from nozzle 25 into nozzle groove 45. For example... Figure 4 As shown in (B), particle P2 is generated at the end of step S2 (time t2).

[0063] At the end of step S2, the on / off valve 27 closes the supply flow path 26, and the flow adjustment valve 28 adjusts the ejection flow rate of the nozzle 25 to zero. Particles P2 are generated due to the operation of these valves 27 and 28. The particles P2 generated at the end of step S2 do not move until the start of step S5. This is because, prior to that, the treatment fluid L does not flow along the supply flow path 26.

[0064] Furthermore, particles P2 can also be generated at the beginning of step S5 (time t3). At the beginning of step S5, the on / off valve 27 opens the supply flow path 26, and the flow regulating valve 28 adjusts the ejection flow rate of the nozzle 25 to a preset flow rate FR2. The operation of these valves 27 and 28 also generates particles P2.

[0065] At the beginning of step S5 (time t3), when the on / off valve 27 opens the supply flow path 26, the processing fluid L begins to flow along the supply flow path 26. As a result, the particles P2 are flushed away by the processing fluid L and begin to move from valves 27 and 28 toward nozzle 25. Then, before the end of step S5, the particles P2 are ejected from nozzle 25 into nozzle slot 45.

[0066] In step S5 of one cycle, the total amount of processing liquid L ejected from nozzle 25 is greater than the volume from the outlet of the upstream valve 28 to the outlet of nozzle 25. Particles P2 can be ejected from nozzle 25 into nozzle groove 45 before the end of step S5, thereby allowing clean processing liquid L to accumulate in buffer section 30. This accumulated clean processing liquid L can then be supplied to substrate W in step S2 of the next cycle.

[0067] At the end of step S5 (time t4), the on / off valve 27 closes the supply flow path 26, and the flow adjustment valve 28 adjusts the ejection flow of the nozzle 25 to zero.

[0068] Furthermore, in this embodiment, the next cycle begins after the current cycle ends, but it can also begin before the current cycle ends. Step S5 of the current cycle and step S1 of the next cycle can also be performed simultaneously. Both steps S1 and S5 are performed while the nozzle 25 is in a standby state in the nozzle slot 45. If a portion of the current cycle and a portion of the next cycle are performed simultaneously, productivity can be improved.

[0069] Next, refer to Figure 3 and Figure 5 This explains how to set the flow rate of the treatment fluid L. For example... Figure 3 As shown, the control unit 9 can also control the liquid supply mechanism 24 so that the flow rate FR2 in step S5 is greater than the flow rate FR1 in step S2. In step S2, the nozzle 25 sprays the processing liquid L onto the substrate W, and in step S5, the nozzle 25 sprays the processing liquid L into the nozzle groove 45.

[0070] According to this embodiment, the flow rate in step S5 is greater than that in step S2, resulting in a higher flow velocity and a greater force exerted by the treatment liquid L on the particles P1. Therefore, in step S5, the particles P1 can be efficiently flushed away to efficiently clean the inner wall surface of the buffer section 30. On the other hand, in step S2, the peeling of the particles P1 pre-attached to the inner wall surface of the buffer section 30 can be suppressed, and the adhesion of the particles P1 to the substrate W can be suppressed.

[0071] like Figure 5 As shown in (A), in step S2, nozzle 25 sprays processing liquid L onto substrate W. Therefore, the flow rate FR1 in step S2 can also be set to generate laminar flow without turbulence inside buffer section 30. In the case of laminar flow, the flow velocity decreases from the center of the flow toward the periphery. The flow velocity is approximately zero at the inner wall surface of buffer section 30, thus preventing the peeling off of particles P1 adhering to the inner wall surface of buffer section 30.

[0072] On the other hand, such as Figure 5As shown in (B), in step S5, nozzle 25 sprays treatment liquid L onto nozzle groove 45. Therefore, the flow rate FR2 in step S5 can also be set to generate turbulence instead of laminar flow inside the buffer section 30. By generating turbulence, particles P1 adhering to the inner wall surface of the buffer section 30 can be peeled off, and the accumulation of particles P1 can be suppressed.

[0073] Next, refer to Figure 6 The buffer section 30 involved in the first modified example will be explained. The buffer section 30 may also have a gas inlet section 32 for introducing a gas such as nitrogen into the internal space 31 of the buffer section 30. The gas inlet section 32 includes, for example, a port 32a connected to a gas pipe. Bubbles B are formed by introducing the gas, and bubbles B are used to adsorb particles P1. Particles P1 and bubbles B can be discharged efficiently together.

[0074] like Figure 6 As shown in (A), in step S2, the nozzle 25 sprays the processing liquid L onto the substrate W. Therefore, in step S2, the gas inlet 32 ​​does not introduce gas into the internal space 31 of the buffer section 30. The formation of bubbles B is prevented, thus preventing the peeling off of particles P1 adhering to the inner wall surface of the buffer section 30.

[0075] On the other hand, such as Figure 6 As shown in (B), in step S5, nozzle 25 sprays treatment liquid L into nozzle groove 45. Therefore, in step S5, gas inlet 32 ​​introduces gas into the internal space 31 of buffer section 30. Bubbles B are formed, thus enabling the removal of particles P1 adhering to the inner wall surface of buffer section 30 and suppressing the accumulation of particles P1.

[0076] Furthermore, in this modified example, the flow rate of the treatment liquid L can be made different in steps S2 and S5, similar to the above-described embodiment.

[0077] Next, refer to Figure 7 The buffer section 30 involved in the second modification will be explained. The buffer section 30 may also have electrodes 33 and 34 for forming an electric field E in the internal space 31 of the buffer section 30. The electrodes 33 and 34 form the electric field E in a direction perpendicular to the flow direction of the processing liquid L or in a direction inclined relative to the flow direction of the processing liquid L. When the particle P1 is charged, the particle P1 can be captured by the electric field E. Furthermore, when most of the particles P1 are only positively or negatively charged, the electrodes 33 and 34 may also form the electric field E in the flow direction of the processing liquid L.

[0078] like Figure 7As shown in (A), in step S2, nozzle 25 sprays processing liquid L onto substrate W. Therefore, in step S2, electrodes 33 and 34 form an electric field E. Charged particles P1 can be captured by the electric field E, thereby preventing particles P1 from adhering to substrate W.

[0079] On the other hand, such as Figure 7 As shown in (B), in step S5, nozzle 25 sprays the treatment liquid L onto nozzle groove 45. Therefore, in step S5, electrodes 33 and 34 do not form an electric field E. Charged particles P1 can be directly flushed away, and charged particles P1 can be efficiently discharged from buffer section 30.

[0080] Furthermore, in this modified example, the flow rate of the processing liquid L can be made different in steps S2 and S5, similar to the embodiment described above. Additionally, the electrodes 33 and 34 of this modified example can be used in conjunction with the gas inlet section 32 of the first modified example.

[0081] When the buffer section 30 has electrodes 33 and 34, the liquid supply mechanism 24 may also have a charge-removing section 35, which removes the charge from the processing liquid L after passing through the buffer section 30 and before being ejected from the nozzle 25. The charge-removing section 35 may include, for example, a wiring 35a that grounds the nozzle 25. The wiring 35a may also ground the piping connecting the buffer section 30 and the nozzle 25. By spraying the decharged processing liquid L onto the substrate W, damage to the substrate W can be suppressed. Furthermore, the charging of the substrate W can be suppressed, and the adhesion of particles to the substrate W can be suppressed.

[0082] Next, refer to Figure 8 The third modification involves the buffer section 30. This modification includes multiple buffer sections 30, which can be connected to each other. When the type of processing fluid L changes and the volume of the buffer section 30 is insufficient, the number of buffer sections 30 can be increased to expand the volume of the internal space 31 of the buffer section 30. A connector 36 can also be provided to connect two adjacent buffer sections 30.

[0083] Next, refer to Figure 9 The buffer section 30 involved in the fourth modification will be explained. The buffer section 30 in this modification includes a flexible tube 37 forming an internal space 31, and a housing 38 forming a pressure-reducing chamber around the tube 37. When the pressure-reducing chamber is depressurized by a vacuum pump 39 or the like, the tube 37 expands, and the volume of the internal space 31 increases. In this modification, similar to the third modification described above, when the type of processing liquid L changes and the volume of the buffer section 30 is insufficient, the volume of the internal space 31 of the buffer section 30 can be increased.

[0084] Next, refer to Figure 10The flow of the processing liquid L outside the liquid treatment unit 2 will be explained. The substrate processing apparatus 1 has a recovery flow path 5 and a return flow path 6. The recovery flow path 5 recovers the processing liquid L ejected from the nozzle 25 into the nozzle groove 45, and the return flow path 6 returns the processing liquid L from the recovery flow path 5 to the supply flow path 26 of the liquid supply mechanism 24. A filter 61 is provided in the return flow path 6. Through the filter 61, particles P1 and P2 generated due to the operation of valves 27 and 28 can be captured, thereby enabling the reuse of the processing liquid L and reducing the amount of waste processing liquid L.

[0085] The recovery flow path 5 and the return flow path 6 are connected via tank 7. The return flow path 6 is a circulation flow path 6 that returns the processed liquid L taken from tank 7 back to tank 7. The upstream end of the circulation flow path 6 is connected to tank 7, and the downstream end of the circulation flow path 6 is also connected to tank 7. The upstream end of the supply flow path 26 of the liquid supply mechanism 24 is connected to the circulation flow path 6. Processed liquid L can be supplied to multiple liquid processing units 2 from the circulation flow path 6.

[0086] A thermometer 62 is provided midway through the circulation path 6 for detecting the temperature of the processing liquid L; a pump 63 for pumping the processing liquid L; and a temperature regulator 64 for regulating the temperature of the processing liquid L. The temperature regulator 64 includes a heater for heating the processing liquid L. Under the control of the control unit 9, the temperature regulator 64 heats the processing liquid L, causing the temperature detected by the thermometer 62 to become the set temperature. The processing liquid L is heated to process the substrate W at a temperature higher than room temperature. The temperature regulator 64 may also include a cooler for cooling the processing liquid L. Alternatively, the processing liquid L may be used to process the substrate W at room temperature. In this case, the thermometer 62 and the temperature regulator 64 are not required.

[0087] The recovery flow path 5 includes an independent flow path 51 for each liquid treatment unit 2, and a common flow path 52 shared by multiple liquid treatment units 2. The upstream end of the independent flow path 51 is connected to the nozzle slot 45, and the downstream end of the independent flow path 51 is connected to the common flow path 52. The downstream end of the common flow path 52 is connected to the tank 7.

[0088] Next, refer to Figure 11 The liquid supply mechanism 24 involved in the modified example will be explained. In this modified example, the liquid supply mechanism 24 has a temperature regulator 65 in the buffer section 30 for adjusting the temperature of the processing liquid L. Since the processing liquid L takes time to pass through the buffer section 30, the temperature regulator 65 prevents the processing liquid L from cooling naturally during this period. Therefore, it is possible to spray the processing liquid L at the desired temperature onto the substrate W.

[0089] Temperature regulator 65 is, for example, part of circulation flow path 6 and is piping surrounding buffer section 30. The outer diameter of buffer section 30 is smaller than the inner diameter of circulation flow path 6, and buffer section 30 is disposed inside circulation flow path 6. The heat of the process fluid L flowing in circulation flow path 6 can suppress the cooling of the process fluid L flowing in buffer section 30. The inner diameter of buffer section 30 can also be the same as the inner diameter of supply flow path 26, making it easy to dispose of buffer section 30 inside circulation flow path 6.

[0090] Furthermore, the temperature regulator 65 may not be part of the circulation path 6, but may be provided independently of the circulation path 6, and may include, for example, an electric heater. Additionally, the temperature regulator 65 may be located inside the buffer section 30 rather than outside the buffer section 30.

[0091] The foregoing has described embodiments of the liquid supply mechanism, substrate processing apparatus, and substrate processing method involved in this disclosure, but this disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations can be made within the scope of the claims. These, of course, also fall within the technical scope of this disclosure.

[0092] This application claims priority to Japan Patent Application No. 2020-085338, filed with the Japan Patent Office on May 14, 2020, and the entire contents of Japan Patent Application No. 2020-085338 are incorporated herein by reference.

[0093] Explanation of reference numerals in the attached figures

[0094] 24: Liquid supply mechanism; 25: Nozzle; 26: Supply flow path; 27: On / off valve; 28: Flow regulating valve; 30: Buffer section; 31: Internal space.

Claims

1. A liquid supply mechanism, comprising: A nozzle that sprays a treatment liquid onto a substrate; A supply path that supplies the treatment fluid to the nozzle; A valve that adjusts the flow in the supply path; and A buffer section temporarily stores the treatment fluid in its internal space midway from the valve toward the nozzle to temporarily trap particles within the internal space; the valve is the source of the particle generation. in, When the valve opens the supply path, the nozzle sprays the treatment fluid; when the valve closes the supply path, the nozzle stops spraying the treatment fluid. The internal space of the buffer section is cylindrical. The inner diameter of the buffer section is larger than the inner diameter of the supply flow path.

2. The liquid supply mechanism according to claim 1, wherein, The buffer section includes a gas inlet section for introducing gas into the internal space.

3. The liquid supply mechanism according to claim 1 or 2, wherein, The buffer section has electrodes for generating an electric field in the internal space.

4. The liquid supply mechanism according to claim 3, wherein, It also has a charge removal section for removing the charge of the treatment liquid after it passes through the buffer section and before it is ejected from the nozzle.

5. The liquid supply mechanism according to any one of claims 1, 2, and 4, wherein, The buffer section can increase the volume of the internal space.

6. The liquid supply mechanism according to claim 5, wherein, The system is equipped with multiple buffer sections, and one buffer section can be connected to the other buffer sections.

7. The liquid supply mechanism according to claim 5, wherein, The buffer section includes a flexible tube forming the internal space and a shell forming a pressure-reducing chamber around the tube.

8. The liquid supply mechanism according to any one of claims 1, 2, 4, 6, and 7, wherein, The buffer section has a temperature regulator for adjusting the temperature of the treatment liquid.

9. A substrate processing apparatus comprising: The liquid supply mechanism according to any one of claims 1 to 8; A nozzle slot in which the nozzle is in standby mode; A recovery flow path for recovering the treatment fluid ejected from the nozzle into the nozzle slot; A return flow path, which is used to return the processed liquid from the recovery flow path to the supply flow path of the liquid supply mechanism; as well as A filter is provided in the return flow path.

10. The substrate processing apparatus according to claim 9, wherein, The recycling path and the return path are connected via a tank. The return flow path is a circulation path that returns the processed liquid taken from the tank back to the tank. The upstream end of the supply flow path of the liquid supply mechanism is connected to the circulation flow path.

11. The substrate processing apparatus according to claim 9 or 10, wherein, It also includes a control unit that controls the liquid supply mechanism. The control unit controls the liquid supply mechanism so that the treatment liquid is sprayed from the nozzle into the nozzle slot during the period when the nozzle is idle in the nozzle slot.

12. The substrate processing apparatus according to claim 11, wherein, The control unit controls the liquid supply mechanism such that the flow rate of the processing liquid ejected from the nozzle into the nozzle slot is greater than the flow rate of the processing liquid ejected from the nozzle into the substrate.

13. A substrate processing method, comprising: The processing liquid is sprayed from the nozzle onto the substrate; The treatment fluid is supplied from the supply flow path to the nozzle; The flow in the supply path is adjusted by a valve; as well as The processing liquid is temporarily stored in the internal space of a buffer section located midway from the valve toward the nozzle to temporarily capture the particles within the internal space. The valve is the source of the particle generation. Specifically, when the valve opens the supply path, the nozzle sprays the treatment liquid; when the valve closes the supply path, the nozzle stops spraying the treatment liquid. The internal space of the buffer section is cylindrical. The inner diameter of the buffer section is larger than the inner diameter of the supply flow path.

14. The substrate processing method according to claim 13, further comprising: The nozzle is placed in standby mode in the nozzle slot; While the nozzle is in standby mode in the nozzle slot, the treatment liquid is sprayed from the nozzle into the nozzle slot; as well as The flow rate of the processing liquid ejected from the nozzle into the nozzle slot is controlled to be greater than the flow rate of the processing liquid ejected from the nozzle into the substrate.

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