Epitaxial chamber with full wafer laser heating

By introducing laser heating components into the semiconductor processing chamber, the problems of complexity and large footprint of traditional chambers are solved, achieving greater process flexibility and precise heating, and reducing costs.

CN115516617BActive Publication Date: 2026-03-17APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-08-11
Publication Date
2026-03-17

AI Technical Summary

Technical Problem

Traditional semiconductor processing chambers are complex in hardware, occupy a large area, and lack process variability. Lamp heating results in high costs and insufficient flexibility.

Method used

A laser heating component is used, in which a laser passes through a cooling plate to heat the substrate. Combined with upper and lower heating devices, precise control of the substrate is achieved, replacing the traditional lamp heating component.

Benefits of technology

It simplifies the chamber structure, reduces the floor space, improves process flexibility and heating accuracy, and reduces costs.

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Abstract

An apparatus for heating a substrate within a thermal processing chamber is disclosed. The apparatus includes a chamber body, a gas inlet, a gas outlet, an upper window, a lower window, a substrate support, and an upper heating device. The upper heating device is a laser heating device and includes one or more laser assemblies. The laser assembly includes a light source, a cooling plate, an optical fiber, and an illumination window.
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Description

Technical Field

[0001] The embodiments described herein generally relate to laser heating systems within thermal process chambers. More specifically, the embodiments described herein relate to laser heating assemblies having one or more lasers disposed through a cooling plate and oriented to heat a substrate within a thermal process chamber. Background Technology

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. However, conventional hardware for processing substrates is large and requires multiple chamber components. Furthermore, conventional hardware lacks processes with variability.

[0003] Previous attempts to reduce chamber complexity and increase process flexibility in epitaxial processing have been limited by the use of lamps as the primary source of chamber heating. Furthermore, conventional approaches are costly and require a large footprint, occupying a significant portion of the workspace. Therefore, there is a need for improved thermal process chambers in semiconductor processing. Summary of the Invention

[0004] This disclosure generally relates to apparatus and methods for semiconductor processing in a heat treatment chamber. In one embodiment, the chamber for substrate processing includes a chamber body, a gas inlet disposed through a side wall of the chamber body, a gas outlet disposed through a side wall of the chamber body and opposite to the gas inlet, an upper window, a lower window, and an upper heating device. The upper heating device includes an upper cooling plate, one or more upper base members disposed on the upper cooling plate, one or more upper light sources, one or more optical fibers connected at a first end to one or more upper light sources and at a second end to the upper base members, and an illumination window disposed within the upper base members and between the one or more optical fibers and the upper window.

[0005] In another embodiment, the chamber for substrate processing includes a chamber body, a gas inlet disposed through a side wall of the chamber body, a gas outlet disposed through a side wall of the chamber body and opposite to the gas inlet, an upper window, a lower window, an upper heating device, and a lower heating device. The upper heating device includes an upper cooling plate (the upper cooling plate has one or more openings disposed through the upper cooling plate), one or more upper base members disposed on the upper cooling plate, one or more upper light sources, one or more optical fibers connected to the one or more upper light sources and the upper base members, and an illumination window disposed within the upper base members and between the one or more optical fibers and the upper window.

[0006] In another embodiment, the chamber for substrate processing includes a chamber body, a gas inlet disposed through a side wall of the chamber body, a gas outlet disposed through a side wall of the chamber body and opposite to the gas inlet, an upper window, a lower window, a substrate support member disposed between the upper and lower windows, an upper heating device, and a lower heating device. The upper heating device includes an upper cooling plate (the upper cooling plate having one or more openings disposed through it), one or more upper base members disposed on the upper cooling plate, one or more upper light sources, one or more optical fibers connected to the one or more upper light sources and the upper base members, and an illumination window disposed within the upper base members and between the one or more optical fibers and the upper window. Diverging laser light is supplied to the optical fibers through the one or more upper light sources. Attached Figure Description

[0007] To gain a more detailed understanding of the features described above, a more specific description of the disclosure can be obtained by referring to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be considered as limiting the scope, as the disclosure allows for other equally effective embodiments.

[0008] Figures 1A-1B The figure shows a schematic cross-sectional view of the processing chamber according to the first and second embodiments described herein.

[0009] Figures 2A-2B The figure shows a schematic cross-sectional view of the processing chamber according to the third and fourth embodiments described herein.

[0010] Figure 3 The diagram is similar to Figures 1A-1B or Figures 2A-2B A schematic cross-sectional view of the laser component seen in any of them.

[0011] Figure 4A This is a schematic plan view of the heating distribution on the substrate according to the first embodiment.

[0012] Figure 4B This is a schematic plan view of the heating distribution on the substrate according to the second embodiment.

[0013] Figures 5A-5C The figure shows a schematic cross-sectional view of the processing chamber according to the fifth, sixth and seventh embodiments.

[0014] For ease of understanding, the same reference numerals have been used to denote common elements in the figures where possible. It is envisioned that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0015] Embodiments of this disclosure generally relate to apparatus and methods for semiconductor processing, and more specifically, to thermal processing chambers. The thermal processing chamber is an epitaxial deposition chamber. The thermal processing chamber includes a substrate support, a chamber body, a gas inlet disposed through a side wall of the chamber body, a gas outlet disposed through a side wall of the chamber body and opposite to the gas inlet, an upper window, a lower window, and an upper heating device. The upper heating device includes an upper cooling plate, one or more upper base members disposed on the upper cooling plate, one or more upper light sources, one or more optical fibers connected at a first end to the one or more upper light sources and at a second end to the upper base members, and an illumination window disposed within the upper base members and between the one or more optical fibers and the upper window.

[0016] The embodiments described herein utilize a laser heating apparatus designed to heat a substrate. The laser heating apparatus is designed to heat the entire surface of the substrate disposed within an epitaxial deposition chamber. The use of a laser heating apparatus allows for more direct control of substrate heating. As described herein, existing epitaxial deposition chambers can be modified using a laser heating apparatus to allow for the use of the apparatus in chambers containing upper and lower quartz windows. Alternatively, the laser heating apparatus can allow for the formation of different epitaxial deposition structures, significantly simplifying the processing chamber and enabling the use of a laser heating apparatus instead of a lamp assembly.

[0017] Figures 1A-1B The figure shows a schematic cross-sectional view of the processing chambers 100a and 100b according to the first and second embodiments described herein. Figure 1A The processing chamber 100a includes a chamber body 106, a process gas inlet 132, a gas outlet 136, an upper window 110, a lower window 112, an upper heating device 175, and a substrate support 124. Both the first processing chamber 100a and the second processing chamber 100b have a lower heating assembly. The first processing chamber 100a further includes a lower lamp assembly 144.

[0018] The chamber body 106 is the outer body of the first processing chamber 100a. The chamber body 106 surrounds the processing volume 102 and forms the sidewalls of the processing volume 102. The chamber body 106 supports a cover 108 and an upper heating device 175 disposed on the cover 108. The chamber body 106 may be an aluminum chamber body. In some embodiments, the chamber body 106 includes multiple components. The processing volume 102 is defined by the chamber body 106, an upper window 110, and a lower window 112. A substrate support 124 is disposed within the processing volume 102.

[0019] A gasket 130 is disposed on the inner surface of the chamber body 106. The gasket 130 protects the chamber body 106 from damage and contamination by byproducts of substrate processing. The gasket 130 may be an aluminum or alumina gasket and may include a protective coating. The gasket 130 is easily removable and can be replaced periodically during preventative maintenance.

[0020] A process gas inlet 132 and a gas outlet 136 are disposed through the chamber body 106. The process gas inlet 132 is fluidly connected to a process gas supply device 138 and a processing volume 102. The process gas inlet 132 includes a plurality of gas inlets, such that the process gas inlet 132 includes five or more gas inlets (not shown) equidistantly spaced along a first side of the chamber body 106. Each process gas inlet 132 is configured to allow process gas to flow from the process gas supply device 138 into the processing volume 102. The process gas supply device 138 may be any suitable gas supply device capable of supplying process gas for substrate processing to the processing volume 102. Suitable gases include silicon-containing precursors, nitrogen-containing precursors, and oxygen-containing precursors, etc.

[0021] Gas outlet 136 is disposed opposite to process gas inlet 132, such that gas outlet 136 is a gas discharge outlet 136, and process gas is discharged from processing volume 102. Gas outlet 136 is located directly opposite process gas inlet 132. Gas outlet 136 may include three or more gas outlets 136. Gas outlet 136 is connected to pump 142, such as a vacuum pump. Gas outlet 136 is fluidly connected to processing volume 102 and pump 142.

[0022] A purge gas inlet 134 is located below the process gas inlet 132 and passes through the chamber body 106. The purge gas inlet 134 fluidly connects the processing volume 102 to the purge gas supply device 140. The purge gas inlet 134 is parallel to the process gas inlet 132. When the substrate support 124 is in the processing position, the purge gas inlet 134 is located in a plane vertically below the substrate support surface 126. The purge gas supplied by the purge gas inlet 134 and the purge gas supply device 140 can be any suitable purge gas, such as argon, nitrogen, or helium.

[0023] The upper window 110 is disposed above the substrate support 124 and within the chamber body 106. The upper window 110 includes a central window 114 and peripheral supports 118. The central window 114 has a dome shape and curves outward from the processing volume 102 and the substrate support 124. The central window 114 is a quartz dome and is optically transparent, allowing radiant energy generated by the heating components to pass through it. The central window 114 is supported by peripheral supports 118, which are disposed along the outer edge of the central window 114. The peripheral supports 118 are connected to the central window 114 and may also be made of quartz. The peripheral supports 118 are disposed on the top of a portion of the chamber body 106, such that the peripheral supports 118 are supported by the chamber body 106. Although illustrated as a dome, it is contemplated that the upper window 110 may alternatively be planar.

[0024] The lower window 112 is located below the support body 171 of the substrate support 124 and below the upper window 110. The lower window is located within the chamber body 106 and includes a central window 116 and a peripheral support 120. The central window 116 has a dome shape and curves outward from the processing volume 102 and the substrate support 124. The central window 116 is disposed around the support axis 150 of the substrate support 124. The central window 116 is a quartz dome and is optically transparent, allowing radiant energy generated by the heating components to pass through it. The central window 116 is supported by the peripheral support 120, which is disposed along the outer edge of the central window 116. The peripheral support 120 is connected to the central window 116 and may also be quartz. The peripheral support 120 is disposed on the top of a ledge within the chamber body 106, such that the peripheral support 118 is supported by the chamber body 106. Although the illustration shows a dome, it is envisioned that the lower window 112 could instead be flat.

[0025] The lower light assembly 144 is disposed below the lower window 112. The lower light assembly 144 is configured to heat the lower surface 170 of the support body 171 via a plurality of heating lamps 146. The heating lamps 146 can be distributed and disposed below the lower window 112 in a predetermined manner. The lower light assembly 144 can be disposed above the bottom 148 of the chamber.

[0026] A substrate support 124 is disposed within the chamber body 106, such that the substrate support 124 is within the processing volume 102. The substrate support 124 includes a support shaft 150, a support body 171, a substrate support surface 126, and a lower surface 170. The support body 171 is disposed on top of the support shaft 150. The support shaft 150 extends downward from the lower surface 170 and passes through an opening in the lower window 112. The substrate support surface 126 is the top surface of the support body 171 and is parallel to the lower surface 170. A substrate 104 may be disposed on the substrate support surface 126.

[0027] The upper heating device 175 includes an upper cooling plate 155, one or more upper base members 158 disposed on the upper cooling plate 155, one or more upper light sources 162, and one or more optical fibers 160 connected to the one or more upper light sources 162 and the one or more upper base members 158. The upper heating device 175 is disposed on top of the cover 108 and above the upper window 110. The upper heating device 175 is configured to heat the top surface 128 of the substrate 104.

[0028] In the first processing chamber 100a, there are ten or more openings 156 passing through the upper cooling plate 155. Each of the ten or more openings 156 includes a sidewall arranged at an acute angle relative to the vertical direction. The cover 108 includes a plurality of cover openings 109. The plurality of cover openings 109 are aligned with the openings 156 formed through the upper cooling plate 155. An upper base member 158 is disposed adjacent to each opening 156. Each of the one or more upper base members 158 has an optical fiber 160 connected to the upper base member. Each optical fiber 160 is connected to one or more upper light sources 162. The one or more upper light sources 162 may be located inside a containment block. The one or more upper light sources 162 project laser light through the optical fiber 160 and through the openings 156 in the upper cooling plate 155. The laser light diverges after exiting the optical fiber 160 and is projected onto the top surface 128 of the substrate 104. The upper heating device 175 provides controlled heating to the substrate 104 and can be used in place of a heating lamp, such as the heating lamp used in the lower lamp assembly 144.

[0029] Controller 164 is connected to both the lower lamp assembly 144 and the upper heating device 175. Controller 164 controls the settings of each of the upper light source 162 and the heating lamp 146. Controller 164 supplies power to each of the lower lamp assembly 144 and the upper heating device 175. Controller 164 can receive input from one or more sensors (not shown) used to measure the temperature of the substrate 104, and can adjust the settings of the lower lamp assembly 144 or the upper heating device 175 accordingly.

[0030] Figure 1B This is a schematic cross-sectional view of the second processing chamber 100b. The second processing chamber 100b is similar to the first processing chamber 100a, but includes a lower heating device 145 instead of a lower lamp assembly 144.

[0031] The lower heating device 145 includes a lower cooling plate 182, one or more lower base members 180 disposed on the lower cooling plate 182, one or more lower light sources 176, and one or more optical fibers 178 connected to the one or more lower light sources 176 and the one or more lower base members 180. The lower heating device 145 is disposed below the bottom 148 of the chamber and below the lower window 112. The lower heating device 145 is configured to heat the lower surface 170 of the support chuck.

[0032] In the second processing chamber 100b, there are ten or more openings 156 through the upper cooling plate 155 and ten or more openings 184 through the lower cooling plate 182. Each of the ten or more openings 184 is an angled opening, such that the opening 184 includes a sidewall set at an acute angle relative to the vertical direction. The ten or more openings 184 through the lower cooling plate 182 are similar to those regarding... Figure 1A Ten or more openings 156 are described. The chamber bottom 148 includes a plurality of bottom openings 111. The plurality of bottom openings 111 are aligned with openings 184 formed through the lower cooling plate 182. A lower base member 180 is disposed adjacent to each opening 184. Each of the one or more lower base members 180 has an optical fiber 178 connected to the lower base member. Each optical fiber 178 may be connected to one or more lower light sources 176. The one or more lower light sources 176 may be located inside the enclosed block. The one or more lower light sources 176 project laser light through the optical fiber 178 and through the openings 184 within the lower cooling plate 182. The laser light diverges after exiting the optical fiber 178 and is projected onto the lower surface 170 of the support chuck of the support body 171. A lower heating device 145 provides controlled heating to the lower surface 170 of the support chuck and may be used in place of a heating lamp, such as the heating lamp used in the lower lamp assembly 144.

[0033] Controller 164 is connected to both the upper heating element 175 and the lower heating element 145. Controller 164 controls the settings of each of the upper light source 162 and the lower light source 176. Controller 164 can supply power to each of the lower heating element 145 and the upper heating element 175. Controller 164 can receive input from one or more sensors (not shown) for measuring the temperature of the substrate 104 and can adjust the settings of the lower lamp assembly 144 or the upper heating element 175 accordingly. In the second processing chamber 100b, when the lamp assembly is not used, the temperature of the substrate 104 can be measured using a pyrometer (not shown).

[0034] Figures 2A-2BThe figures show schematic cross-sectional views of processing chambers 200a and 200b according to the third and fourth embodiments described herein. Processing chamber 200a is a heat treatment chamber. Processing chamber 200a includes a chamber body 201, a gas inlet 132, a gas outlet 136, a substrate support 124, an upper window 204, a lower window 206, an upper heating device 175, a lower heating device 145, and a controller 164. The gas inlet 132, gas outlet 136, substrate support 124, upper heating device 175, lower heating device 145, and controller 164 are similar to those described above regarding... Figure 1A and Figure 1B Each of the described entities.

[0035] A chamber body 201 surrounds a processing volume 202. The chamber body 201 encloses at least a portion of the processing volume 202 and has at least two openings for a heating system to be fitted into the chamber body. An upper heating element 175 covers a first opening of the chamber body 201, such as a top opening, while a lower heating element 145 covers a second opening of the chamber body 201, such as a bottom opening. The chamber body 201 includes a process gas inlet 132, a purge gas inlet 134, and a gas outlet 136 disposed through the chamber body 201. The process gas inlet 132 and the purge gas inlet 134 are disposed along a first side of the chamber body 201. The gas outlet 136 is disposed opposite to the process gas inlet 132 and the purge gas inlet 134 such that the gas outlet 136 forms an angle of approximately 180 degrees with the process gas inlet 132 and / or the purge gas inlet 134, and is disposed along a second side of the chamber body 201.

[0036] A chamber-side liner 210 is disposed on the inner surface of the chamber body 201. The chamber-side liner 210 covers the inner surface of the chamber body 201 and protects the chamber body 201 from damage caused by heating the substrate 104 using the upper heating device 175 and the lower heating device 145. The chamber-side liner 210 is a quartz liner, such as an opaque quartz liner. The opacity of the chamber-side liner 210 allows radiant energy dispersed throughout the chamber body 201 to be absorbed by the chamber-side liner 210 before impacting the chamber body 201. The chamber-side liner 210 can serve as a heat sink within the chamber body 201, absorbing radiant energy and helping to maintain a constant temperature within the processing volume 202.

[0037] The upper window 204 is disposed adjacent to the upper heating element 175 such that it is positioned opposite the upper base member 158 along the bottom surface of the upper cooling plate 155 of the upper heating element 175. The upper window 204 is a flat window and is made of quartz. The upper window 204 is quartz and has a reflective coating on its lower surface, such that radiant energy impacting the upper window 204 is reflected. The reflective quartz material is used to protect the upper cooling plate 155 from process gases and radiant energy within the processing volume 202. The reflective coating of the upper window 204 may be a multilayer dielectric coating, such as a gold layer having a protective oxide or nitride layer formed thereon. The reflective coating may also be a modified quartz material that has been enhanced to improve reflectivity. The reflective coating is used to enhance reflection in the infrared range. The upper window 204 includes a plurality of window openings 212 disposed therein. The window openings 212 are aligned with each opening 156 of the upper cooling plate 155. The number of window openings 212 is equal to the number of openings 156 in the upper cooling plate 155. The openings 156 and window openings 212 are arranged to deliver laser light from the upper heating device 175 to the substrate 104. The openings 156 and window openings 212 can be arranged in concentric circles, arrays, or spiral patterns.

[0038] The lower window 206 is disposed adjacent to the lower heating element 145 such that it is positioned opposite the lower base member 180 along the top surface of the lower cooling plate 182 of the lower heating element 145. The lower window 206 is a flat window and may be made of quartz. The lower window 206 is quartz and has a reflective coating on its lower surface, such that radiant energy impacting the lower window 206 is reflected. The reflective quartz material is used to protect the lower cooling plate 182 from process gases and radiant energy within the processing volume 202. The reflective coating of the lower window 206 may be a multilayer dielectric coating, such as a gold layer having a protective oxide or nitride layer formed thereon. The reflective coating may also be a modified quartz material that has been enhanced to improve reflectivity. The reflective coating is used to enhance reflection in the infrared range. The lower window 206 includes a plurality of window openings 214 disposed therein. The window openings 214 are aligned with each opening 184 of the lower cooling plate 182. The number of window openings 214 is equal to the number of openings 184 on the lower cooling plate 182.

[0039] Processing chamber 200a is composed of Figure 1B The second processing chamber 100b is significantly simplified. Processing chamber 200a has a flat upper cooling plate 155 and upper window 204, as well as a flat lower cooling plate 182 and lower window 206. The planarity of the upper cooling plate 155, upper window 204, lower cooling plate 182 and lower window 206 allows for a reduction in chamber size and overall floor space.

[0040] Figure 2BThe diagram illustrates processing chamber 200b. Processing chamber 200b is similar to... Figure 2A The processing chamber 200a is modified, but the upper heating device 220 and the lower heating device 230 replace the upper heating device 175 and the lower heating device 145. The upper window 204 and the lower window 206 are modified so that the upper window opening 240 and the lower window opening 250 are aligned with the openings 238 and 248, respectively.

[0041] The upper heating device 220 includes an upper cooling plate 155, one or more upper base members 236 disposed on the upper cooling plate 155, one or more upper light sources 232, and one or more optical fibers 234 connected to the one or more upper light sources 232 and the one or more upper base members 236. The upper heating device 220 is disposed on the top of the upper window 204. The upper heating device 220 is configured to heat the top surface 128 of the substrate 104.

[0042] In the processing chamber 200b, there are one or more openings 238 passing through the upper cooling plate 155. Figure 2B In the illustrated embodiment, an opening 238 is formed through the upper cooling plate 155. The opening 238 is centered above the substrate 104 and above the substrate support surface 126 of the substrate support member 124. Each opening 238 is an angled opening such that it includes sidewalls arranged at an acute angle relative to the vertical direction. An upper base member 236 is disposed adjacent to each opening 238. Each of one or more upper base members 236 has an optical fiber 234 connected to the upper base member. Each optical fiber 234 is connected to one or more upper light sources 232. The one or more upper light sources 232 may be located inside an enclosed block. The one or more upper light sources 232 project laser light through the optical fiber 234 and through the opening 238 within the upper cooling plate 155. The laser light diverges after exiting the optical fiber 234 and is projected onto the top surface 128 of the substrate 104.

[0043] The lower heating device 230 includes a lower cooling plate 182, one or more lower base members 246 disposed on the lower cooling plate 182, one or more lower light sources 242, and one or more optical fibers 244 connected to the one or more lower light sources 242 and the one or more lower base members 246. The lower heating device 230 is disposed below the lower window 206. The lower heating device 230 is configured to heat the substrate support 124 and / or the positioned substrate 104.

[0044] In the processing chamber 200b, there are one or more openings 248 passing through the lower cooling plate 182. Each of the one or more openings 248 is an angled opening such that the opening 248 includes a sidewall set at an acute angle relative to the vertical direction. The one or more openings 248 passing through the lower cooling plate 182 are similar to those regarding... Figure 1BThe described opening 184. In some embodiments, one or more openings 248 include two openings through the lower cooling plate 182. Each of the two openings may be horizontally offset from the center of the substrate support surface 126 such that each of the two openings 248 is on an opposite side of the support axis 150 of the substrate support 124. In other embodiments, a single opening, such as a single opening, may be present through the lower cooling plate 182, such that the single opening is horizontally offset from the center of the substrate support surface 126. The single opening may include a lens assembly that allows the offset single opening to project a uniform ring of radiated energy onto the lower surface 170 of the support chuck of the support body 171, wherein the uniform ring of radiated energy is centered around the support axis 150.

[0045] A lower base member 246 is disposed adjacent to each opening 248. Each of the one or more lower base members 246 has an optical fiber 244 connected to the lower base member. Each optical fiber 244 may be connected to one or more lower light sources 242. The one or more lower light sources 242 may be located inside the enclosed block. The one or more lower light sources 242 project laser light through the optical fiber 244 and through the opening 248 in the lower cooling plate 182. The laser light diverges after leaving the optical fiber 244 and is projected onto the lower surface 170 of the support chuck of the support body 171. A lower heating device 230 provides controlled heating to the lower surface 170 of the support chuck and may be used in place of a heating lamp, such as the heating lamp used in the lower lamp assembly 144.

[0046] The upper window 204 is disposed adjacent to the upper heating device 220, such that the upper window 204 is disposed opposite to the upper base member 236 along the bottom surface of the upper heating device 220. The upper window 204 covers the top of the processing chamber 200b and is part of the entire cover assembly. The upper window 204 is... Figure 2A The upper window 204 is made of a similar material to the upper window 204 described herein. The upper window 204 includes at least one window opening 240 disposed therein. The window opening 240 is aligned with the opening 238 of the upper cooling plate 155. The number of window openings 240 is equal to the number of openings 238 of the upper cooling plate 155.

[0047] The lower window 206 is disposed adjacent to the lower heating device 230, such that the lower window 206 is disposed opposite to the lower base member 246 along the top surface of the lower cooling plate 182 of the lower heating device 230. The lower window 206 is a flat window and may be similar in material to... Figure 2AThe lower window 206 includes one or more window openings 250 disposed therein. The window openings 250 are aligned with each opening 248 of the lower cooling plate 182. The number of window openings 250 is equal to the number of openings 248 of the lower cooling plate 182. In some embodiments, only one opening 248 is formed through the cooling plate 182, and a lower base member 246 is adjacent to the opening 248. In this embodiment, the lower window 206 includes one window opening 250 adjacent to the opening 248. In some embodiments, two openings 248 are formed through the cooling plate 182, and there are two window openings 250 formed adjacent to and aligned with the two openings 248.

[0048] Processing chamber 200b is composed of Figure 1B The second processing chamber 100b is significantly simplified. Processing chamber 200b has a flat upper cooling plate 155 and upper window 204, as well as a flat lower cooling plate 182 and lower window 206. The planarity of the upper cooling plate 155, upper window 204, lower cooling plate 182 and lower window 206 allows for a reduction in chamber size and overall floor space.

[0049] Figure 3 The diagram is similar to that in Figures 1A-1B or Figures 2A-2B A schematic cross-sectional view of laser assembly 300 as seen in any of the above. Laser assembly 300 includes a portion of upper cooling plate 155, a portion of upper window 204, upper base member 158, optical fiber 160, light source 162, and illumination window 308. Upper cooling plate 155, upper window 204, upper base member 158, optical fiber 160, and light source 162 have been described above. Laser assembly 300 is similar to any laser assembly used in upper heating devices 175, 220 and lower heating devices 145, 230, and can be used in place of each of them. Elements of laser assembly 300 may be incorporated into and belong to upper heating devices 175, 220 or lower heating devices 145, 230.

[0050] The upper cooling plate 155 includes an upper surface 332 and a lower surface 334. Both the upper surface 332 and the lower surface 334 are flat surfaces. The upper surface 332 is opposite to the lower surface 334. The upper cooling plate 155 includes cooling channels 306 disposed therein. The cooling channels 306 are formed through the upper cooling plate 155 and are used to circulate water or other cooling fluids through the upper cooling plate 155. The cooling channels 306 can be arranged in any suitable manner and configured to maintain the upper cooling plate 155 at a temperature below about 250°C, such as below about 200°C, such as below about 150°C, such as below 100°C. In some embodiments, the temperature of the upper cooling plate 155 is from about 25°C to about 100°C, such as from about 25°C to about 70°C. The top surface of the upper cooling plate 155 is generally cooler than the bottom surface of the upper cooling plate 155. The upper cooling plate 155 comprises a metallic material, such as aluminum or nickel-plated stainless steel. The upper cooling plate 155 may also comprise a copper material. Other corrosion-resistant alloys with high thermal conductivity can also be used.

[0051] In some embodiments, the cooling channel 306 is a conduit disposed on the upper cooling plate 155 and its upper surface 332, and therefore does not pass through the upper cooling plate 155 itself. The upper cooling plate 155 has at least one O-ring groove 312 disposed within its upper surface 332. The O-ring groove 312 is circular and is formed below the illumination window 308. An O-ring or other seal is disposed in the O-ring groove 312 to facilitate the formation of a fluid-tight vacuum seal.

[0052] The opening 156 formed through the upper cooling plate 155 is a conical frustum, making it partially conical. The opening 156 is narrower at the upper surface 332 of the upper cooling plate 155 and wider at the lower surface 334. In embodiments where the optical element is positioned between the optical fiber 160 and the opening 156, the diameter of the opening 156 at the upper surface 332 is approximately 0.1 mm to approximately 15 mm, such as approximately 1 mm to approximately 10 mm, such as approximately 2 mm to approximately 7 mm. When the optical element is positioned between the optical fiber 160 and the opening 156, the diameter of the opening 156 at the lower surface 334 is approximately 2 mm to approximately 25 mm, such as approximately 5 mm to approximately 20 mm. In embodiments utilizing a fiber laser as the optical fiber 160, the diameter of the opening 156 at the upper surface 332 is approximately 10 micrometers to approximately 200 micrometers, such as approximately 50 micrometers to approximately 150 micrometers, such as approximately 100 micrometers. In the embodiment utilizing a fiber laser as the fiber 160, the diameter of the opening 156 at the lower surface 334 is approximately 50 micrometers to approximately 250 micrometers, such as approximately 75 micrometers to approximately 150 micrometers, such as approximately 100 micrometers. The cooling plate opening wall 302 may be tilted relative to the lower surface 334 of the upper cooling plate 155 at an angle of approximately 45 degrees to 85 degrees, such as an angle of approximately 5 degrees to approximately 55 degrees relative to the vertical direction passing through the opening 156 and perpendicular to the lower surface 334 of the upper cooling plate 155, such as approximately 5 degrees to approximately 45 degrees, such as approximately 10 degrees to approximately 35 degrees.

[0053] The upper window 204 is disposed adjacent to the lower surface 334 of the upper cooling plate 155. The upper window 204 includes a top surface 336 and a bottom surface 338. The top surface 336 and the bottom surface 338 are flat surfaces and are parallel to each other. The top surface 336 of the upper window 204 contacts the lower surface 334 of the upper cooling plate 155. The upper window 204 includes a window opening 212 disposed through the upper window. The window opening 212 is aligned with the opening 156 through the upper cooling plate 155.

[0054] Window opening 212 is a truncated cone, making opening 156 partially conical. Window opening 212 is narrower at the top surface 336 of the upper window 204 and wider at the bottom surface 338 of the upper window 204. The diameter of window opening 212 at the top surface 336 is equal to the diameter of opening 156 at the lower surface 334 of the upper cooling plate 155. The diameter of window opening 212 at the bottom surface 338 is approximately 0.1 mm to approximately 20 mm, such as approximately 2 mm to approximately 20 mm, such as approximately 5 mm to approximately 10 mm. Window opening wall 304 may be inclined at an angle of approximately 45 degrees to 85 degrees relative to the bottom surface 338 of the upper window 204, such as an angle of approximately 55 degrees to approximately 80 degrees relative to the bottom surface 338 of the upper window 204. The angle of window opening wall 304 is equal to the angle of cooling plate opening wall 302.

[0055] The upper window 204 is made of quartz. In some embodiments, the upper window 204 is a reflective quartz material. The reflective quartz material can reflect more than 40% of the radiant energy impacting the upper window 204, such as more than 50% or more than 60% of the radiant energy. The upper window 204 has a thickness 330 of about 1 mm to about 30 mm, such as about 2 mm to about 25 mm, such as about 5 mm to about 20 mm.

[0056] The upper base member 158 may be a cylindrical component. The upper base member 158 may be a laser head holder, a screw attachment, or any other device for holding the optical fiber 160 adjacent to the upper cooling plate 155. The upper base member 158 is made of aluminum, stainless steel, or copper. In some embodiments, the upper base member 158 is made of the same material as the upper cooling plate 155. Using similar materials allows for similar thermal expansion. The upper base member 158 is disposed on the upper surface 332 of the upper cooling plate 155. The upper base member 158 includes an illumination window 308 disposed within the upper base member. The upper base member 158 further includes at least a portion of one end of the optical fiber 160 disposed within the upper base member. The upper base member 158 includes a central passage 350 disposed within the upper base member. The central passage 350 is a vertical passage passing through the center of the upper base member 158. At least a portion of the optical fiber 160 and the illumination window 308 are disposed within the central passage 350.

[0057] The upper base member 158 further includes an O-ring groove 310 disposed therein. The O-ring groove 310 is disposed adjacent to the illumination window 308. The O-ring groove 310 is sized to receive an O-ring or other seal and is disposed opposite to the O-ring groove 312 of the upper cooling plate 155. The illumination window 308 is disposed between the O-ring groove 312 of the upper cooling plate 155 and the O-ring groove 310 of the upper base member 158. The upper base member 158 is fastened to the upper surface 332 of the upper cooling plate 155. The upper base member 158 can be fastened to the upper surface 332 by means of an adhesive such as glue or a fastener such as a bolt.

[0058] Optical fiber 160 is used to transmit laser irradiation from light source 162 to upper base member 158 and irradiation window 308. Optical fiber 160 includes an inner fiber 340 and an outer cladding 344. The inner fiber 340 is an optical fiber cable for transmitting laser irradiation. The outer cladding 344 is a cladding surrounding the inner fiber 340 to protect it. The outer diameter 342 of the inner fiber 340 is from about 300 micrometers to about 1000 micrometers, such as from about 400 micrometers to about 900 micrometers, such as from about 500 micrometers to about 800 micrometers. In some embodiments, the outer diameter of the inner fiber 340 is about 600 micrometers. In some embodiments, the outer diameter 320 of the outer cladding 344 is from about 5 millimeters to about 12 millimeters, such as from about 6 millimeters to about 10 millimeters, such as about 8 millimeters. Optical fiber 160 may have near-perfect internal reflection, such that all light within optical fiber 160 is completely reflected and does not escape along the length of optical fiber 160.

[0059] Laser 322 is output from the end of optical fiber 160. Laser 322 may be a diverging laser. Laser 322 is an infrared laser or a visible laser, with an output wavelength of radiant energy between about 400 nanometers (nm) and 1 millimeter (mm), such as about 400 nm to about 1700 nm, such as about 400 nm to about 1100 nm, for example, about 700 nm to about 1100 nm. Laser 322 has an output power of about 10 watts to about 10000 watts, such as about 100 watts to about 5000 watts, such as about 200 watts to about 1000 watts. Laser 322 is directed toward illumination window 308. Laser 322 is manipulated by optical components within illumination window 308 and output as a conical beam 324 having an upper diameter 316 of about 2 mm to about 10 mm (such as about 4 mm to about 7 mm). The conical beam 324 is divergent and expands as it approaches the top surface 128 of the substrate 104. The conical beam 324 expands and has a bottom diameter 318 of approximately 50 mm to approximately 100 mm, such as approximately 70 mm to approximately 80 mm, at the top surface 128 of the substrate 104. The conical beam 324 travels a vertical distance 314 of approximately 50 mm to approximately 150 mm, such as approximately 75 mm to approximately 125 mm, from the illumination window 308 to the top surface 128 of the substrate 104. The ratio of the vertical distance 314 to the bottom diameter 318 is approximately 2:1 to approximately 1:1.5, such as approximately 1.5:1 to approximately 1:1.

[0060] In the embodiments described herein, the optical fiber 160 and the illumination window 308 are configured such that less than 1% of the energy emitted by the optical fiber 160 is absorbed by the window, the upper base member 158, or the optical fiber 160 itself after being emitted by the optical fiber 160, such as less than about 0.5%, such as less than about 0.25%, such as less than about 0.15%. In some embodiments, the illumination window 308 absorbs about 1.6 watts of power from the laser 322 before emitting the laser 322 as a conical beam 324.

[0061] The light source 162 may be a single laser diode or a plurality of laser diodes. In embodiments where the light source 162 is a single laser diode, the light source 162 is a high-power laser diode, and optical components may be used to split the beam to flow through each optical fiber 160. In embodiments utilizing multiple light sources 162, the light sources 162 are directly coupled to a single optical fiber 160. In some embodiments, the number of light sources 162 is equal to the number of openings 156 formed through the upper cooling plate 155, such as ten or more light sources 162.

[0062] The illumination window 308 is an optical component or includes one or more optical components disposed within the illumination window. The illumination window 308 is configured to emit a diverging laser 322 and form a conical beam 324. The illumination window 308 may be a lens or may include lenses such as diverging lenses or coaxial lenses. In some embodiments, the illumination window 308 may form a single or multiple annular beams.

[0063] Laser 322 and conical beam 324 include infrared radiation (IR) or visible radiation, and in some embodiments have wavelengths of about 1 micrometer or greater. The wavelength of laser 322 is described in more detail herein.

[0064] Each of the upper heating device 220, the lower heating device 145, and the lower heating device 230 includes, for example, regarding Figure 3 The components described. In the embodiment describing the laser assembly 300 of the lower heating device 145 and the lower heating device 230, each word in the descriptive terms "upper" / "top" and "lower" / "bottom" can be reversed.

[0065] Figure 4A This is a schematic plan view of the heat distribution on the top surface 128 of the substrate 104 according to the first embodiment. The heat distribution includes a plurality of hot spots 401. The hot spots 401 are formed by a conical beam 324 emitted by the laser component 300, such that a single conical beam 324 forms each of the plurality of hot spots 401. Figure 4AHot spot 401 is shown in a spiral pattern 403. Spiral pattern 403 can be further described as a coil. Hot spot 401 formed by each conical bundle 324 can reach temperatures of about 800°C to about 1500°C, such as about 900°C to about 1300°C, such as about 1000°C to about 1200°C.

[0066] There may be more than 10 laser components 300 and hot spots 401, such as more than 15 laser components 300 and hot spots 401, such as more than 20 laser components 300 and hot spots 401. Each hot spot 401 may overlap with other hot spots 401. Figure 4A The hot spot 401 shown is illustrative. The diameter of the hot spot 401 can be greater than about 50 mm, such as greater than about 60 mm, such as about 50 mm to about 100 mm, such as about 60 mm to about 80 mm. In one example, the hot spots 401 are positioned at different radial distances from the center of the substrate 104, such that uniform heating of the substrate 104 is achieved when the substrate 104 is rotated. In such examples, the radial distances of the hot spots 401 can overlap, although the hot spots 401 can be angularly offset from each other.

[0067] Figure 4B This is a schematic plan view of the heat distribution on the substrate 104 according to the second embodiment. The second embodiment of the heat distribution along the top surface 128 of the substrate 104 includes a plurality of concentric heated regions 402. Each concentric heated region 402 includes a central region 410 and a plurality of annular regions 412. Annular gaps 404 may exist between the heated regions 402. The size of the annular gaps 404 can be adjusted by changing the thickness 408 of each heated region 402. In some embodiments, the thickness 408 of the heated regions 402 is adjusted such that there are no annular gaps 404, and the entire top surface 128 of the substrate 104 is covered within the heated regions 402.

[0068] In some embodiments, there may be seven or more heated zones 402, such as ten or more heated zones 402, such as fourteen or more heated zones. The diameter of the central zone 410 may be the same as the thickness 408 of each annular zone 412. The thickness 408 of each annular zone 412 may be from about 5 mm to about 50 mm, such as from about 10 mm to about 40 mm. The thickness 406 of the annular gap 404 may be about 0 mm, such that the thickness 406 of the annular gap 404 is negligible.

[0069] Each heating zone 402 may be formed by a single laser assembly 300, or all heating zones 402 may be formed by a single laser assembly 300. In embodiments where each heating zone 402 is formed by a single laser assembly 300, at least one laser assembly 300 is horizontally offset from the center of the top surface 128 of the substrate 104. In embodiments where a single laser element 300 generates all heating zones 402, a single laser assembly 300 may be used. The single laser assembly 300 may include one or more coaxial lenses within the illumination window.

[0070] Figures 5A-5C The figures are schematic cross-sectional views of processing chambers 500a, 500b, and 500c according to the fifth, sixth, and seventh embodiments. Processing chambers 500a, 500b, and 500c include one or more digital optical processing components 522 and 524 disposed within an upper base member 236 and one or more lower base members 246. Figure 5A The processing chamber 500a is similar to Figure 2B The processing chamber 200b is modified, but upper heating devices 520 and lower heating devices 530 replace upper heating devices 220 and lower heating devices 230. Upper heating device 520 further includes an upper digital light processing (DLP) component 522, while lower heating device 530 further includes a lower DLP component 524. Upper DLP components 522 and lower DLP components 524 are connected to a controller 164. Controller 164 can control DLP components 522, 524 to control the distribution of radiant energy within the processing volume 202.

[0071] An upper heating device 520 is disposed on top of an upper cooling plate 155, and one or more upper base members 236 are disposed on the upper cooling plate 155. One or more optical fibers 234 are connected to one or more upper light sources 232 and one or more upper base members 236. An upper DLP assembly 522 is disposed within the upper base member 236 and uses a digital micromirror display (DMD) to guide the light emitted by one or more optical fibers 234 across the top surface 128 of the substrate 104. The upper heating device 520 is disposed on top of an upper window 204. The upper heating device 520 is configured to heat the top surface 128 of the substrate 104.

[0072] A lower heating device 530 is disposed on the bottom of the lower cooling plate 182, and one or more lower base members 246 are disposed on the lower cooling plate 182. One or more optical fibers 244 are connected to one or more lower light sources 242 and one or more lower base members 246. A lower DLP assembly 524 is disposed within the lower base member 246, and a DMD is used to scatter the light emitted by one or more optical fibers 244 across the lower surface 170 of the support body 171. The lower heating device 530 is disposed on the bottom of the lower window 206.

[0073] The radiant energy emitted by the upper heating device 520 is shown as a beam 526, which is scattered toward different regions of the substrate 104. One or more optical fibers 234 may be a bundle of optical fibers 234. Each optical fiber 234 includes a separate radiant energy source, such as a separate upper light source 232. The radiant energy emitted by the lower heating device 530 is shown as a beam 528, which is scattered toward different regions of the substrate 104. One or more optical fibers 244 may be a bundle of optical fibers 244, such that each optical fiber 244 includes a separate radiant energy source, such as a separate lower light source 242.

[0074] As an alternative to the DLP component, each of the upper DLP component 522 and the lower DLP component 524 can be replaced by a liquid crystal display (LCD) component. The LCD component performs a similar function to the DLP component and can be used to scatter and control the radiated energy provided by the optical fiber 234.

[0075] Figure 5B The processing chamber 500b is similar to Figure 5A The processing chamber 500a has an upper heating element 540 and a lower heating element 550, which replace the upper heating element 520 and the lower heating element 530. The upper heating element 540 includes an upper DLP assembly 522 disposed above the opening 238. In the processing chamber 500b, an upper light source 232 is adjacent to the upper DLP assembly 522 and is configured to provide a focused beam 552 to the upper DLP assembly 522, which is then redirected into a dispersed beam 554 across the substrate 104. The focused beam 552 can be a plurality of beams generated by the light source within the upper light source 232, which helps to improve control and adjustability. The lower heating element 530 also includes a lower DLP assembly 524 disposed adjacent to and below the opening 248. The lower light source 242 is configured to provide a focused beam 556 to the lower DLP assembly 524. The focused beam 556 is redirected into beam 558 after contacting the lower DLP assembly 524 and dispersed across the lower surface 170 of the support body 171. The focused beam 556 may be a plurality of beams generated by the laser diode within the lower light source 242.

[0076] Figure 5C The processing chamber 500c is similar to Figure 5A The processing chamber 500a and Figure 5B The processing chamber 500b is replaced by an upper heating device 560 and a lower heating device 570, but the upper heating devices 520, 540 and the lower heating devices 530, 550 are replaced by an upper heating device 560 and a lower heating device 570. The upper heating device 560 includes an upper DLP assembly 522 disposed above the opening 238 and a laser source 562 disposed through the side wall of the chamber body 201, such that the laser source 562 is disposed through the chamber side liner 210. In the processing chamber 500c, the laser source 562 is configured to provide a focused beam 552 to the upper DLP assembly 522, and then the focused beam 552 is redirected into a dispersed beam 554 across the substrate 104. The focused beam 552 may be a plurality of beams generated by a laser diode within the laser source 562. The lower heating device 570 also includes a lower DLP assembly 524 disposed adjacent to and below the opening 248, and a laser source 566 disposed (or mounted to) a side wall of the chamber body 201, such that the laser source 566 is disposed (or mounted to) a chamber side liner 210. In some embodiments, multiple laser sources 566 may be present. The laser sources 566 are configured to provide a focused beam 556 to the lower DLP assembly 524. The focused beam 556 is redirected into a beam 558 after contacting the lower DLP assembly 524 and dispersed across the lower surface 170 of the support body 171. The focused beam 556 may be a plurality of beams generated by a laser diode within the lower light source 242.

[0077] Laser sources 562 and 566 emit focused beams 552 and 556 into processing volume 202. Upper DLP assembly 522 includes a DMD assembly 564 for reflecting the focused beam 552 into beam 554. Lower DLP assembly 524 includes a DMD assembly 568 for reflecting the focused beam 556 into beam 558.

[0078] It is estimated that when using, such as Figure 1A and Figure 1B In the embodiment shown, approximately 10% of the energy emitted by the laser assembly 300 is absorbed by the upper window 110 and the lower window 112. Therefore, by allowing the conical beam 324 to pass unobstructed through the opening in the window, as shown... Figures 2A-2B The upper window 204 and lower window 206 shown improve the efficiency of the laser heating system described herein. Each window opening 212 includes an anti-reflective coating disposed on the window opening wall 304. The anti-reflective coating makes the window opening 212 almost 99% transparent.

[0079] Using laser assembly 300 to heat substrate 104 reduces the overall system cost and increases control over heating. The use of laser increases control over application direction, improves the variability of the heating process, and reduces the need for extensive encapsulation and protection of the chambers. The use of laser assembly 300 also improves the accuracy of the pyrometers within processing chambers 200a and 200b. The pyrometer accuracy is improved because the heating radiation wavelength of the laser is selected to be significantly different from the wavelength measured by the pyrometer. Therefore, the pyrometer can use a narrowband filter to filter out noise generated by the laser. The radiation generated by the lamp has a broad wavelength and produces significant noise in pyrometer measurements.

[0080] The light sources described herein may include light sources other than laser diodes connected to an optical fiber. In some embodiments, the light source is a lamp or laser diode coupled to a fiber laser. Fiber lasers offer flexibility in light source placement, allowing the light source to be placed adjacent to the processing chamber rather than on its cover. This allows other instruments to be placed on top of the processing chamber cover.

[0081] Although the foregoing describes embodiments of the present disclosure, other and further embodiments of the present disclosure may be designed without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the appended claims.

Claims

1. A chamber for substrate processing, comprising: a chamber body; a gas inlet disposed through a sidewall of the chamber body; a gas outlet disposed through a sidewall of the chamber body and opposite the gas inlet; an upper window; and lower window; an upper heating device, the upper heating device further comprising: an upper cooling plate; one or more upper pedestal members disposed on the upper cooling plate; one or more upper light sources; one or more optical fibers connected at a first end to the one or more upper light sources and at a second end to the upper pedestal members; and an illumination window disposed within the upper pedestal members and between the one or more optical fibers and the upper window.

2. The chamber of claim 1, further comprising a lower heating device, the lower heating device comprising: a lower cooling plate; one or more lower pedestal members disposed on the lower cooling plate; one or more lower light sources; one or more optical fibers connected at a first end to the one or more lower light sources and at a second end to the lower pedestal members; and an illumination window disposed within the lower pedestal members and between the one or more optical fibers and the lower window.

3. The chamber of claim 1, wherein the one or more upper light sources comprise ten or more light sources.

4. The chamber of claim 1, wherein the illumination window further comprises a lens for diverging a laser beam emitted by the one or more optical fibers into a conical beam.

5. The chamber of claim 1, wherein the upper cooling plate comprises one or more coolant channels disposed therein.

6. The chamber of claim 1, wherein the upper window is a quartz window.

7. The chamber of claim 6, wherein the quartz window is a reflective quartz window having one or more window openings disposed therethrough.

8. The chamber of claim 6, wherein the upper window is a dome-shaped window.

9. The chamber of claim 1, wherein the upper cooling plate further comprises one or more openings disposed therethrough.

10. The chamber of claim 9, wherein the one or more openings have a conical frustum shape.

11. A chamber for substrate processing, comprising: a chamber body; a gas inlet disposed through a sidewall of the chamber body; a gas outlet disposed through a sidewall of the chamber body and opposite the gas inlet; an upper window; a lower window; an upper heating device, the upper heating device further comprising: an upper cooling plate having one or more openings disposed therethrough; one or more upper pedestal members disposed on the upper cooling plate; one or more upper light sources; one or more optical fibers connected to the one or more upper light sources and the upper pedestal members; and an illumination window disposed within the upper pedestal members and between the one or more optical fibers and the upper window. ​ ​ ​ an illumination window disposed within the upper base member and between the one or more optical fibers and the upper window; and a lower heating device.

12. The chamber of claim 11, wherein the upper window is an upper quartz dome and the lower window is a lower quartz dome.

13. The chamber of claim 11, wherein the upper window is an upper reflective quartz liner and the lower window is a lower reflective quartz liner.

14. The chamber of claim 13, further comprising an opaque quartz body liner disposed on an inner surface of the chamber body.

15. The chamber of claim 14, wherein the upper window further comprises one or more window openings disposed therethrough and the lower window further comprises one or more window openings disposed therethrough.

16. The chamber of claim 15, wherein the one or more openings have a shape of a conical frustum and a narrow portion of the conical frustum is adjacent to the one or more upper base members.

17. The chamber of claim 16, wherein a wide portion of the conical frustum is adjacent to the upper window and aligned with the one or more window openings disposed through the upper window.

18. A chamber for substrate processing, comprising: a chamber body; a gas inlet disposed through a sidewall of the chamber body; a gas outlet disposed through a sidewall of the chamber body and opposite the gas inlet; an upper window; a lower window; a substrate support disposed between the upper window and the lower window; an upper heating device, the upper heating device further comprising: an upper cooling plate having one or more openings disposed therethrough; one or more upper base members disposed on the upper cooling plate; one or more upper light sources; one or more optical fibers connected to the one or more upper light sources and the upper base member, wherein divergent laser light is supplied to the optical fibers by the one or more upper light sources; and an illumination window disposed within the upper base member and between the one or more optical fibers and the upper window; and a lower heating device.

19. The chamber of claim 18, wherein the illumination window comprises a coaxial lens.

20. The chamber of claim 18, wherein the upper window is disposed on a bottom surface of the upper cooling plate and the upper cooling plate is disposed on a top portion of the chamber body.

Citation Information

Patent Citations

  • Wafer spot heating with beam width modulation

    US20190371631A1