A gas injection mechanism and a gas phase reaction device

Abstract

The present invention provides a gas injection mechanism and a gas phase reaction device, wherein the gas injection mechanism comprises a first gas injection mechanism located in a middle area for conveying a first gas, and a second gas injection mechanism located in a peripheral area surrounding the first gas injection mechanism for conveying a second gas, wherein the second gas injection mechanism comprises a plurality of second gas conveying channels, at least some of the second gas conveying channels are rotating gas flow channels, the velocity of the gas flow ejected along the rotating gas flow channel comprises an axial component and a tangential component, and the ratio of the tangential component to the axial component is greater than 0, thereby forming a rotating gas flow, and the rotation direction of the rotating gas flow is consistent with the rotation direction of the carrier plate during the reaction process, and the existence of the tangential component of the velocity of the rotating gas flow makes the flow field in the reaction chamber in the edge area flow collision mixing and streamline turning process smoother, thereby suppressing or completely eliminating the generation of vortices in the reaction chamber.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices and apparatuses, and in particular to a gas injection mechanism and a gas phase reaction apparatus. Background Art

[0002] The reaction chamber is a crucial chamber in the semiconductor device manufacturing process, in which the reaction chamber of the gas phase reaction device is brought in by gas and the flow field is established. For example, in the reaction chamber that grows materials by gas phase reaction, during the process growth, the transportation of gas source materials and the removal of byproducts after the growth reaction are completed by the reaction chamber flow field established by the carrier gas and the reactant gas.

[0003] The carrier plate that carries the material growth substrate in the airflow usually rotates during the material growth process. For the reaction chamber where the carrier plate needs to rotate, due to the rotation of the carrier plate, the gas flow near the outer edge of the carrier plate has a tangential flow velocity formed by the dragging of the carrier plate in addition to the flow velocity along the main axis of the reaction chamber. The existence of the tangential flow velocity will increase the total velocity of the airflow in the edge flow field, especially when the carrier plate rotates at a high speed. The tangential flow velocity is large, which will generate vortices in the flow field in the direction of the incoming flow in the edge area of ​​the carrier plate. The gas vortex will have many negative effects on the use of the cavity: reducing the uniformity of the grown material on the substrate in the vortex area and the nearby area; reducing the stability of the cavity growth environment and the growth process, etc.

[0004] For the reaction chamber where the gas carries the reactants, during the actual material growth process, the distribution and shape of the gas flow field are usually adjusted by adjusting the following three overall process parameters: the total gas volume of the reaction chamber process, the reaction chamber pressure, and the carrier plate speed. By setting and adjusting the above three overall process adjustment parameters, the above-mentioned gas vortex can be suppressed and eliminated in a certain direction and range; but such adjustment itself limits the available process parameter range. In addition, in the process of adjusting these overall process parameters to eliminate gas vortices, the amount of carrier gas and source material gas often increases, resulting in a decrease in the efficiency of source material use, and an increase in material consumption and growth costs. Summary of the invention

[0005] In view of the above-mentioned defects of the gas phase reaction device in the prior art, the present invention provides a gas injection mechanism and a gas phase reaction device to solve one or more of the above-mentioned problems.

[0006] In order to achieve the above object, a first aspect of the present invention provides a gas injection mechanism for a gas phase reaction device, the gas injection mechanism comprising:

[0007] A first gas injection mechanism, used for delivering a first gas, located in a middle area of ​​the gas injection mechanism, wherein the first gas injection mechanism comprises a plurality of first gas delivery channels;

[0008] a second gas injection mechanism, for delivering a second gas, located in a peripheral area of ​​the gas injection mechanism and surrounding the first gas injection mechanism; the second gas injection mechanism comprises a first side and a second side arranged opposite to each other, the first side being configured as a gas outlet side; the second gas injection mechanism comprises a plurality of second gas delivery channels, at least some of the second gas delivery channels being rotating gas flow channels;

[0009] The air flow velocity of the second gas ejected along the rotating air flow channel includes an axial component and a tangential component, and the ratio of the tangential component to the axial component is greater than 0, so that the second gas is ejected along the rotating air flow channel to form a rotating air flow, and the rotation direction of the rotating air flow is consistent with the rotation direction of the supporting plate located in the gas phase reaction device and arranged opposite to the gas injection mechanism during the reaction process.

[0010] Optionally, during the gas phase reaction, the average molecular weight of the second gas is greater than or equal to the average molecular weight of the first gas.

[0011] Optionally, the first gas is a reaction source gas and a carrier gas, used to react to generate a target product, and the second gas is one or more of a purge gas, a carrier gas, and a reaction source gas. The second gases do not react with each other, or the second gases react with each other but do not generate the target product.

[0012] Optionally, the second gas injection mechanism covers the edge of the carrier plate, and the coverage area does not exceed 36% of the area of ​​the carrier plate, or the second gas injection mechanism is located outside the carrier plate.

[0013] Optionally, the second gas delivery channels are arranged into at least one concentric annular area, and the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from each rotating airflow channel contained in the same concentric annular area is the same.

[0014] Optionally, the second gas delivery channel is arranged into a plurality of concentric annular areas, and the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from each concentric annular area is the same, or the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from the outermost annular area is not less than the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from the innermost annular area, or the ratio of the tangential component to the axial component of the velocity of the rotating airflow gradually increases from the innermost annular area to the outermost annular area of ​​the concentric annular areas.

[0015] Optionally, the velocity of the rotating airflow ejected from at least part of the rotating airflow channel further includes a radial component, wherein a ratio of the tangential component to the axial component is ≥0.1, and a ratio of the radial component to the axial component is ≤0.5.

[0016] Optionally, the second gas delivery channels are arranged into a plurality of concentric annular regions, so that the swirling airflow channels where the velocity of the ejected swirling airflow includes the radial component are located in the remaining annular regions outside the innermost annular region.

[0017] Optionally, the ratio of the radial component to the axial component of the velocity of the rotating airflow ejected from each concentric annular region except the innermost annular region is the same; or the ratio of the radial component to the axial component of the velocity of the rotating airflow ejected from the outermost annular region is not less than the ratio of the radial component to the axial component of the velocity of the rotating airflow ejected from the sub-inner annular region adjacent to the innermost annular region; or the ratio of the radial component to the axial component of the velocity of the rotating airflow gradually increases from the sub-inner annular region to the outermost annular region of the concentric annular regions.

[0018] Optionally, the vapor deposition device comprises at least one isolation element, which separates the second gas injection mechanism into a plurality of mutually independent sub-regions, and the second gas delivered in at least two of the sub-regions is independently regulated.

[0019] Optionally, the multiple sub-regions are multiple concentric annular regions, the flow rate of the second gas introduced into the outermost sub-region is not less than the flow rate of the second gas introduced into the innermost sub-region, and / or the average molecular weight of the second gas introduced into the outermost sub-region is not less than the average molecular weight of the second gas introduced into the innermost sub-region.

[0020] Optionally, the multiple sub-regions are multiple concentric annular regions, and the flow rate of the second gas introduced gradually increases from the innermost sub-region to the outermost sub-region, and / or the average molecular weight of the second gas introduced gradually increases.

[0021] A second aspect of the present invention provides a gas phase reaction device, comprising:

[0022] a reaction chamber;

[0023] A carrier plate is disposed in the reaction chamber, wherein the rotation speed of the carrier plate during the reaction is ≥ 200 RPM;

[0024] The gas injection mechanism is arranged opposite to the carrier plate, and the gas injection mechanism is the gas injection mechanism provided by the first aspect of the present invention.

[0025] As described above, the gas injection mechanism and gas phase reaction device of the present invention have the following beneficial effects:

[0026] The gas injection mechanism of the present invention is used for a gas phase reaction device, including a first gas injection mechanism located in the middle area for conveying a first gas, and a second gas injection mechanism located in the peripheral area surrounding the first gas injection mechanism for conveying a second gas, the second gas injection mechanism includes a plurality of second gas conveying channels, at least part of the second gas conveying channels are rotating gas flow channels, the speed of the gas flow ejected along the rotating gas flow channel includes an axial component and a tangential component, and the ratio of the tangential component to the axial component is greater than 0, so a rotating gas flow is formed, and the direction of the rotating gas flow is consistent with the rotation direction of the carrier plate during the reaction process. Since the speed of the rotating gas flow has a tangential component, the tangential component has a tangential speed and momentum, so that the relative speed of the gas flow in the middle flow field and the gas flow in the edge flow field in the reaction chamber is reduced, so that the flow collision mixing and streamline turning process of the flow field in the reaction chamber in the edge area is smoother, thereby suppressing or completely eliminating the generation of vortices in the reaction chamber, so that the laminar flow characteristics of the reaction chamber flow field are more stable. At the same time, the overall process parameters, such as the total process gas volume of the reaction chamber, the pressure of the reaction chamber, the rotation speed of the carrier plate, etc., are also expanded. The expansion of the applicable range of the above process parameters can further help improve the utilization rate of carrier gas and source material gas, thereby effectively reducing the cost of material growth. At the same time, it can also reduce the particle defects in the growing material on the carrier plate in the reaction chamber and improve the yield of the product. The above effect is particularly obvious when the carrier plate rotates at a high speed (above 200 RPM).

[0027] The gas phase reaction device with the above-mentioned gas injection mechanism can reduce and suppress the generation of gas flow vortices, obtain a uniform and stable gas flow field, thereby expanding the settable range of process parameters, helping to improve the utilization rate of carrier gas and source material gas, and thus effectively reducing the cost of material growth. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 The diagram shows a front cross-sectional view of a reaction chamber of a gas phase reaction device where a gas injection mechanism provided by an embodiment of the present invention is located.

[0029] Figure 2 Shown is a bottom view schematic diagram of a first gas injection mechanism according to an embodiment of the present invention.

[0030] Figure 3 Display as Figure 2 A bottom view schematically showing a gas injection mechanism in an optional embodiment is shown.

[0031] Figure 4 Display as Figure 2A bottom view schematically shows a second gas injection mechanism of the gas injection mechanism shown.

[0032] Figure 5 Display as Figure 2 The three-dimensional structural schematic diagram of the second gas injection mechanism of the gas injection mechanism shown is a top view.

[0033] Figure 6 Display as Figure 4 Schematic side cross-sectional view of line HH in FIG.

[0034] Figure 7 Display as Figure 5 The schematic cross-sectional view of the second gas injection mechanism in the radial direction AA is shown, and the three-dimensional perspective structure of the second gas injection mechanism is shown from a top view.

[0035] Figure 8 The figure shows a deformation of the second gas injection mechanism in the first gas injection mechanism of an embodiment of the present invention, wherein the tubular channel in the second gas injection mechanism is shown in a partial perspective manner.

[0036] Fig. 9 Display as Figure 8 A partial enlarged view of part P.

[0037] Fig.10 Display as Figure 8 The schematic radial cross-sectional view of the second gas injection mechanism is shown, and the three-dimensional perspective structure of the second gas injection mechanism is shown from a top view.

[0038] Fig.11 It is a schematic diagram of the three-dimensional structure of the second gas injection mechanism in the second gas injection mechanism according to an embodiment of the present invention, viewed from a top perspective.

[0039] Fig.12 The second gas injection mechanism is shown along Fig.11 The schematic cross-sectional view in the radial direction L0-L0 is shown, and the three-dimensional perspective structure of the second gas injection mechanism is shown from a top view.

[0040] Fig.13 Display as Fig.11 A bottom view schematically shows a second gas injection mechanism.

[0041] Fig.14 Display as Fig.13 Schematic side cross-sectional view of line HH in FIG.

[0042] Fig.15 Display as Fig.13 Schematic diagram of the front cross-section along line KK in FIG.

[0043] Fig.16Shown is a deformation of the second gas injection mechanism in the second gas injection mechanism of an embodiment of the present invention, wherein the tubular channel in the second gas injection mechanism is shown in a partial perspective manner.

[0044] Fig.17 Display as Fig.16 A partial enlarged schematic diagram of the P′ part.

[0045] Fig.18 Display as Fig.16 A schematic front cross-sectional view of the CC is shown.

[0046] Fig.19 Display as Fig.16 The second gas injection mechanism is shown as a radial cross-sectional schematic diagram, and the three-dimensional perspective structure of the second gas injection mechanism is shown from a top view.

[0047] Fig. 20 It is a schematic diagram of the structure from a top view of a second gas injection mechanism having a plurality of mutually independent sub-regions according to an embodiment of the present invention.

[0048] Component number description

[0049] 100 Gas injection mechanism 1024 first side

[0050] 101 first gas injection mechanism 1025 second side

[0051] 1010 First gas delivery channel 1027 (1027') Annular groove

[0052] 1010-1 First gap 10271 (10271') First annular groove

[0053] 1010-2 Second gap 10272 (10272') Second annular groove

[0054] 102 (102', 102", 102') Second gas injection mechanism 10273 (10273') Third annular groove

[0055] 1020 (1020', 1020", 1020'") Second gas delivery channel 103 Isolation element

[0056] 1020"-1 Pipe 110 First circumference

[0057] 1026 (1026', 1026", 1026"') Rotating airflow channel 120 Second circumference

[0058] 1026-1 (1026'-1) Conical channel 130 Third circumference

[0059] 1026-2 (1026'-2, 1026"-2, 1026"'-2) Tubular channel 200 Reaction chamber

[0060] 1021 First sub-area 201 Carrying plate

[0061] 1022 Second sub-area 300 Gas supply end

[0062] 1023 Third sub-area 301 Gas supply pipeline DETAILED DESCRIPTION

[0063] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0064] This embodiment provides a gas injection mechanism 100, which is used to Figure 1 In the gas phase reaction device shown, the gas injection mechanism 100 is arranged in the reaction chamber 200 of the gas phase reaction device, and is used to transport the reaction gas into the reaction chamber 200. A carrier plate 201 is arranged in the reaction chamber 200, and the gas injection mechanism 100 is arranged opposite to the carrier plate 201. The gas phase reaction device can be, for example, a gas phase deposition device, specifically, a chemical vapor deposition device, a physical vapor deposition device, a plasma enhanced vapor deposition device, a metal organic chemical vapor deposition (MOCVD) device, etc. This embodiment is described by taking the gas injection mechanism of the MOCVD device as an example. It should be understood that the device is only exemplary, and the present invention is not limited to this device.

[0065] like Figure 1 As shown, the gas phase reaction device of this embodiment has a reaction chamber 200. The cross section of the reaction chamber 200 of the gas phase reaction device is generally a circular or quasi-circular structure, or may be a rectangular structure or other structures well known to those skilled in the art, which will not be elaborated here. The reaction chamber 200 may be a vertical flow chamber with vertical air intake, or a horizontal flow chamber with central air intake. The reaction chamber 200 may be an upright chamber in which the gas injection mechanism 100 and the carrier plate 201 are arranged opposite to each other, with the gas injection mechanism 100 located at the upper part and the carrier plate 201 located at the lower part, or it may be an inverted chamber in which the gas injection mechanism 100 and the carrier plate 201 are arranged opposite to each other, with the carrier plate 201 located at the upper part and the gas injection mechanism 100 located at the lower part. For ease of description, this embodiment is described in detail with reference to FIG. Figure 1The cross section of the reaction chamber 200 shown is circular, and the gas injection mechanism 100 is located at the upper part and the carrier plate 201 is located at the lower part. Take the upright vertical flow chamber as an example to illustrate the gas injection mechanism 100.

[0066] Reference Figure 1 and Figure 2 , a carrier plate 201 for carrying a substrate to be processed is provided in the reaction chamber 200, and the carrier plate 201 rotates around the rotation axis A of the rotation axis during the gas phase reaction. The gas injection mechanism 100 is arranged opposite to the carrier plate 201, for example, it is arranged at the top of the reaction chamber 200, and the gas is injected into the reaction chamber 200, and the carrier plate 201 is located below the gas injection mechanism 100. The gas injection mechanism 100 provided in this embodiment has a disc-shaped structure as a whole, including a first gas injection mechanism 101 for conveying a first gas and a second gas injection mechanism 102 for conveying a second gas. The first gas injection mechanism 101 is located in the middle area of ​​the gas injection mechanism 100, and the second gas injection mechanism 102 is located in the peripheral area of ​​the gas injection mechanism 100, and is arranged around the first gas injection mechanism 101. The gas phase reaction device also includes a gas supply end 300 and a gas supply pipeline 301 . The gas supply end 300 is connected to the first gas injection mechanism 101 and the second gas injection mechanism 102 through the gas supply pipeline 301 , and is used to supply the first gas to the first gas injection mechanism 101 and the second gas to the second gas injection mechanism 102 .

[0067] Also refer to Figure 1 As shown, the second gas injection mechanism 102 has a first side 1024 and a second side 1025 that are arranged opposite to each other, and the first side 1024 is a gas outlet surface facing the carrier plate 201. Similarly, the first gas injection mechanism 101 also has a gas outlet surface facing the carrier plate 201. A main axis B is defined, and the main axis B is perpendicular to the surface where the first side 1024 is located (which can be equivalent to the gas outlet surface of the disc-shaped gas injection mechanism 100) and passes through the geometric center of the gas outlet surface of the gas injection mechanism 100. The main axis B may be parallel to the rotation axis A of the carrier plate 201, or may not be parallel. Preferably, the main axis B is parallel to the rotation axis A of the carrier plate 201. Preferably, the main axis B coincides with the rotation axis A.

[0068] Figure 2 The bottom cross-sectional schematic diagram of the gas injection mechanism 100 is shown. It should be understood that in the present invention, the "bottom view" refers to the viewing direction from the first side 1024 to the second side 1025, and the "top view" refers to the viewing direction from the second side 1025 to the first side 1024.

[0069] like Figure 2As shown, the first gas injection mechanism 101 includes a plurality of first gas delivery channels 1010, which are distributed in the first gas injection mechanism 101. In this embodiment, the first gas delivery channel 1010 is configured as a slit-shaped channel, which extends in the same direction. During the gas phase reaction, the first gas is a reaction source gas and a carrier gas, which is used to react to generate a target product. Exemplarily, for group III-V MOCVD, the first gas is a group III metal organic source gas, a group V hydride source gas, and a carrier gas. The first gas delivery channel 1010 includes a first slit 1010-1 and a second slit 1010-2, the first slit 1010-1 is used to transport the group III metal organic source gas and the carrier gas to the gas phase reaction area, and the second slit 1010-2 is used to transport the group V hydride source gas and the carrier gas to the gas phase reaction area, thereby providing the group III metal organic source gas and the group V hydride source gas to react on the substrate to be processed to generate group III-V compounds.

[0070] Preferably, the first slits 1010-1 and the second slits 1010-2 are alternately arranged in the first gas injection mechanism 101. Preferably, a third slit (not shown) is further included between the alternately arranged first slits 1010-1 and the second slits 1010-2, and a carrier gas (or purge gas) that does not contain reactive gas and does not react with reactive gas flows out from the third slit.

[0071] In another optional embodiment of this embodiment, if Figure 3 As shown, the first gas delivery channel 1010 is a hole-shaped structure, for example, a circular hole, an elliptical hole, a diamond hole or the like. These holes can be arranged as concentric ring areas, or strip-shaped interval distribution areas, or several groups of holes staggered distribution, or several fan-shaped areas, etc. Those skilled in the art can adjust the shape and position relationship of the hole distribution according to actual process requirements, which is not limited here.

[0072] In another optional embodiment of the present embodiment, the first gas delivery channel may also be a combination of a slit channel and a hole structure, wherein the distribution, shape and positional relationship of the slit channel and the hole structure may also be adjusted according to actual process requirements.

[0073] In this embodiment, the airflow direction formed by the first gas ejected from the first gas delivery channel 1010 is parallel to the main axis B, that is, the first gas delivery channel 1010 is a vertical airflow channel, and the airflow direction formed is vertically toward the carrier plate 201 .

[0074] Also refer to Figure 2 and Figure 3In this embodiment, the second gas injection mechanism 102 includes a plurality of second gas delivery channels 1020 for delivering a second gas, which may be one or more of a purge gas, a carrier gas, and a reaction source gas. Preferably, the second gases do not react with each other or react with each other but do not generate a target product. If the second gas injection mechanism 102 introduces all the reaction sources involved in the reaction, unnecessary growth (such as deposition on the vessel wall) will be caused, and source gas will be wasted, reducing the maintenance cycle of the equipment. In addition, some reaction sources will enter the internal gas phase reaction area, affecting the uniformity of the grown material. In this embodiment, the second gases introduced into the second gas delivery channel 1020 do not react with each other or react with each other but do not generate a target product, so the above problems can be effectively avoided and the uniformity of the grown material can be improved. Exemplarily, for group III-V MOCVD, the second gas may be a group V hydride source gas and a carrier gas, or a purge gas.

[0075] like Figure 4 and Figure 5 As shown, a plurality of second gas delivery channels 1020 can be distributed in the second gas injection mechanism 102 in any manner. In this embodiment, at least part of the second gas delivery channels 1020 are rotating gas flow channels 1026, that is, the second gas delivery channels 1020 can all be rotating gas flow channels 1026 (the second gas is ejected along the rotating gas flow channels 1026 to form a rotating gas flow), or can be a combination of a vertical gas flow channel similar to the first gas delivery channel 1010 (the direction of the formed gas flow is vertically toward the carrier plate) and a rotating gas flow channel 1026.

[0076] The air flow velocity of the second gas ejected along the rotating air flow channel 1026 includes an axial component and a tangential component, that is, Figure 1 The axial and tangential components are shown. And the ratio of the tangential component to the axial component is greater than 0, so that the second gas is ejected along the above-mentioned rotating airflow channel 1026 to form a rotating airflow, and the direction of the rotating airflow is consistent with the rotation direction of the carrier plate during the reaction process.

[0077] In the reaction chamber 200, the carrier plate 201 is usually rotating, and the rotation makes the flow field near the edge of the carrier plate 201 have not only the flow velocity along the main axis direction of the reaction chamber 200, but also the tangential flow velocity formed by the dragging of the carrier plate 201. The tangential flow velocity will increase the total velocity of the airflow in the edge flow field, especially when the tangential flow velocity is large, a vortex will be generated in the flow field in the direction of the incoming flow in the edge area of ​​the carrier plate 201, and the faster the rotation speed of the carrier plate 201, the easier it is to generate a vortex. Since the rotating airflow injected by the gas injection mechanism 100 of the present invention at the periphery has a tangential velocity and momentum, and the rotation direction of the rotating airflow is consistent with the rotation direction of the carrier plate 201, the relative velocity of the airflow from the edge and the internal injection flow to the edge of the carrier plate (and dragged by the carrier plate) can be reduced, and the flow collision mixing and streamline turning process of the flow field in the edge area are smoother, thereby being able to suppress or completely eliminate the generation of vortices. If the direction of the rotating airflow is inconsistent with the rotating direction of the carrier plate 201, the relative speed between the airflow at the edge of the carrier plate 201 and the incoming flow will increase, which will intensify the vortex.

[0078] In an optional embodiment, during the gas phase reaction, the average molecular weight of the second gas is greater than or equal to the average molecular weight of the first gas. In this way, the gas flow in the peripheral area has a greater momentum than the gas flow in the middle area, so that the flow collision mixing and streamline turning process in the edge area of ​​the flow field in the reaction chamber is smoother, and the effect of stabilizing the flow field in the reaction chamber can be better obtained.

[0079] In an optional embodiment, the second gas injection mechanism 102 is located outside the carrier plate 201. In another optional embodiment, due to the adoption of the rotating airflow channel 1026 that can generate a rotating airflow, the second gas injection mechanism 102 can cover the edge of the carrier plate 201, and the coverage area does not exceed 36% of the area of ​​the carrier plate 201 (that is, the radius of the uncovered area along the radial direction of the carrier plate is greater than or equal to 80% of the radius of the carrier plate). Compared with the prior art, under the premise of ensuring the uniformity of growth in the effective growth area on the carrier plate, the area of ​​the carrier plate covered by the second gas injection mechanism 102 is increased, which can reduce the waste of reaction source gas and further improve the efficiency of reaction source use.

[0080] In an optional embodiment, the second gas delivery channels 1020 are distributed in the second gas injection mechanism 102. Optionally, at least part of the second gas delivery channels 1020 are distributed in a ring shape or a fan ring shape in the peripheral area of ​​the gas injection mechanism 100.

[0081] Preferably, the second gas delivery channels 1020 are arranged to form at least one concentric annular region. Preferably, the second gas delivery channels 1020 are arranged to form multiple concentric annular regions, each of which has the same number of second gas delivery channels 1020, or at least two concentric annular regions have different numbers of second gas delivery channels 1020, and the specific number distribution depends on the process requirements; preferably, the second gas delivery channels 1020 in each concentric annular region are arranged in radial alignment, preferably, the second gas delivery channels 1020 in each concentric annular region are arranged in a staggered manner in the radial direction. Preferably, the tangential component of the velocity of the rotating gas flow ejected from each rotating gas flow channel 1026 contained in the same concentric annular region is the same as the ratio of the axial component.

[0082] by Figure 4 and Figure 5 Taking the disc-shaped gas injection mechanism 100 shown as an example, the second gas delivery channel 1020 is distributed along the circumference in the second gas injection mechanism 102. Optionally, when the second gas delivery channel 1020 is distributed along the circumference in the second gas injection mechanism 102, it can be distributed along one circumference or multiple circumferences in the second gas injection mechanism 102. When the second gas delivery channel 1020 is distributed along multiple circumferences in the second gas injection mechanism 102, the multiple circumferences are concentric circumferences or non-concentric circumferences. Preferably, the second gas delivery channel 1020 is distributed along multiple concentric circumferences in the second gas injection mechanism 102. Figure 4 and Figure 5As shown, it is exemplarily shown that the second gas delivery channel 1020 is distributed in the second gas injection mechanism 102 along three concentric circles - the first circle 110 (equivalent to the innermost annular area), the second circle 120 (equivalent to the sub-inner annular area) and the third circle 130 (equivalent to the outermost annular area), and at least one circle contains a rotating airflow channel 1026. When the rotating airflow channels 1026 are distributed on multiple circles, the number of rotating airflow channels 1026 on each circle can be the same or different. Among them, the ratio of the tangential component to the axial component of the speed of the rotating airflow ejected from the rotating airflow channel 1026 in the first circle 110 is x1, the ratio of the tangential component to the axial component of the speed of the rotating airflow ejected from the rotating airflow channel 1026 in the second circle 120 is x2, and the ratio of the tangential component to the axial component of the speed of the rotating airflow ejected from the rotating airflow channel 1026 in the third circle 130 is x3. The ratio of the tangential component to the axial component of the speed of the rotating airflow ejected from each concentric annular area can be the same, that is, x1=x2=x3; preferably, the ratio of the tangential component to the axial component of the speed of the rotating airflow ejected from the outermost annular area (third circumference 130) is not less than the ratio of the tangential component to the axial component of the speed of the rotating airflow ejected from the innermost annular area (first circumference 110), that is, x3≥x1, or from the innermost annular area (first circumference 110) to the outermost annular area (third circumference 130) of the concentric annular areas, the ratio of the tangential component to the axial component of the speed of the rotating airflow gradually increases, that is, x1<x2<x3. When the second gas delivery channel 1020 is arranged to form more than three concentric annular areas, the same applies and will not be repeated here. Therefore, the proportional distribution of the tangential component and the axial component of the velocity of the rotating airflow ejected from the rotating airflow channel 1026 can be designed according to different reaction chambers and process requirements, so that the difference between the airflow velocity direction of the airflow ejected from the rotating airflow channel 1026 on the first circle 110 close to the middle area (i.e., the area where the first gas injection mechanism 101 is located) and the airflow velocity direction of the airflow ejected from the first gas injection mechanism 101 (the first gas delivery channel 1010 is a vertical airflow channel) is minimized, thereby reducing the impact on the airflow in the internal gas phase reaction area. The tangential velocity and momentum of the airflow ejected from the rotating airflow channel 1026 on the second circle 120 and the third circle 130 are gradually increased to reduce the impact of flow mixing in the edge area, thereby improving the stability of the overall airflow, and at the same time can help improve the utilization rate of the carrier gas and the source material gas, thereby effectively reducing the cost of material growth, and at the same time can also reduce the particle defects in the growing material on the carrier plate 201 in the reaction chamber 200, thereby improving the product yield.

[0083] In an optional embodiment, the velocity of the rotating airflow ejected from at least part of the rotating airflow channel 1026 also includes a radial component, that is, a velocity along the Figure 1The axial, tangential and radial components are shown. The ratio of the tangential component to the axial component is ≥ 0.1, and the ratio of the radial component to the axial component is ≤ 0.5. For reaction chambers with different structural proportions and usage scenarios, the introduction of the above-mentioned rotating airflow with a radial component in the airflow velocity can further reduce the vortex. However, the radial component should not be too large, otherwise it will have a significant impact on the airflow in the internal gas phase reaction area.

[0084] Preferably, the second gas delivery channels 1020 are arranged to form a plurality of concentric annular regions, and the ratio of the radial component to the axial component of the velocity of the swirl gas flow ejected from each swirl gas flow channel contained in the same concentric annular region is the same.

[0085] Preferably, the rotating airflow channel 1026 including the radial component is not located in the annular area closest to the middle area (i.e., the area where the first gas injection mechanism 101 is located), that is, it is located in the remaining annular areas outside the innermost annular area, so that the difference between the airflow velocity direction of the airflow ejected from the rotating airflow channel 1026 and the airflow velocity direction of the airflow ejected from the first gas injection mechanism 101 is minimized, thereby reducing the vortex while reducing the impact on the airflow in the internal gas phase reaction area.

[0086] Likewise Figure 4 and Figure 5 Taking the disc-shaped gas injection mechanism 100 shown as an example, it is shown that the second gas delivery channel 1020 is distributed in the second gas injection mechanism 102 along three concentric circles - the first circle 110 (equivalent to the innermost annular area), the second circle 120 (equivalent to the sub-inner annular area) and the third circle 130 (equivalent to the outermost annular area). The ratio of the tangential component to the axial component of the speed of the rotating airflow ejected from the rotating airflow channel 1026 in the first circle 110 is x1, and the ratio of the radial component to the axial component is y1. The ratio of the tangential component to the axial component of the speed of the rotating airflow ejected from the rotating airflow channel 1026 in the second circle 120 is x2, and the ratio of the radial component to the axial component is y2. The ratio of the tangential component to the axial component of the speed of the rotating airflow ejected from the rotating airflow channel 1026 in the third circle 130 is x3, and the ratio of the radial component to the axial component is y3.

[0087] Preferably, the swirl airflow channel 1026 including the radial component may be located on the second circumference 120 and / or the third circumference 130, but not on the first circumference 110, that is, y1=0, and at least one of y2 and y3 is not 0. Further preferably, the ratio of the radial component to the axial component of the speed of the swirl airflow ejected from the remaining concentric annular regions except the innermost annular region (the first circumference 110) is the same, that is, y2=y3; or the ratio of the radial component to the axial component of the speed of the swirl airflow ejected from the outermost annular region (the third circumference 130) is not less than the ratio of the radial component to the axial component of the speed of the swirl airflow ejected from the sub-inner annular region (the second circumference 120) adjacent to the innermost annular region, that is, y3≥y2; or from the sub-inner annular region (the second circumference 120) of the concentric annular region to the outermost annular region (the third circumference 130), the ratio of the radial component to the axial component of the speed of the swirl airflow gradually increases, that is, y2<y3. When the second gas delivery channels 1020 are arranged to form more than three concentric annular regions, the same is true and will not be repeated here. Therefore, the proportional distribution of the radial component and the axial component of the velocity of the swirl gas flow ejected from the swirl gas flow channel 1026 can be designed according to different reaction chambers and process requirements, so as to reduce the vortex and the influence on the gas flow in the internal gas phase reaction area.

[0088] In an optional embodiment, the second gas delivered by the second gas injection mechanism 102 comes from the same gas supply end, and the gas delivered by the second gas injection mechanism 102 is uniformly regulated.

[0089] like Figure 1 As shown, the second gas injection mechanism 102 located in the outer area of ​​the gas injection mechanism 100 is fed with the same gas from the gas supply end 300, so the type and composition of the second gas delivered to the reaction chamber 200 by the second gas delivery channel 1020 are the same. It should be pointed out that the above-mentioned same gas does not refer to a single gas type, but refers to the same gas delivered to the reaction chamber 200 by each second gas delivery channel 1020, which can be a single gas or a mixed gas. For example, for III-V group MOCVD, the second gas can be a V group hydride source gas and a carrier gas, or a purge gas.

[0090] A control unit (not shown), such as a valve, a mass flow controller, a pressure controller, etc., is also provided between the gas supply end 300 and the second gas injection mechanism 102. The control unit uniformly regulates the gas of the second gas injection mechanism 102, thereby ensuring that the type and composition of the gas transported in the second gas injection mechanism 102 are the same.

[0091] In an optional embodiment, the second gas injection mechanism 102 is divided into a plurality of mutually independent sub-regions, and the second gas delivered in at least two sub-regions is independently regulated.

[0092] like Fig. 20 As shown, only a schematic diagram of the structure of the second gas injection mechanism 102 from a top view is shown, and the second gas injection mechanism 102 is divided into a plurality of independent sub-regions by at least one isolation member 103. In an optional embodiment, the reaction chamber 200 is provided with a top plate (not shown), which covers the second side 1025 of the second gas injection mechanism 102, and a plurality of isolation members 103 are provided on the top plate. The isolation members 103 may be edges of the top plate protruding in the direction of the second side 1025 of the second gas injection mechanism 102, and the isolation members 103 are located between the second side 1025 of the second gas injection mechanism 102 and the top plate. When the top plate is covered and installed on the second side 1025 of the second gas injection mechanism 102, the isolation members 103 divide the second gas delivery channel 1020 in the second gas injection mechanism 102 into a plurality of sub-regions. In an optional embodiment, as Fig. 20 As shown, the isolation member 103 can be formed as an edge protruding from the second side 1025 of the second gas injection mechanism 102 toward the top plate. The isolation member 103 is located between the second side 1025 of the second gas injection mechanism 102 and the top plate. When the top plate is covered and installed on the second side 1025 of the second gas injection mechanism 102, the isolation member 103 divides the second gas delivery channel 1020 in the second gas injection mechanism 102 into a plurality of sub-areas.

[0093] The isolation member 103 may be distributed in a circular form along the circumference of the second gas injection mechanism 102, dividing the second gas injection mechanism 102 into at least two concentric annular sub-regions. Alternatively, the isolation member 103 may be formed in the second gas injection mechanism 102 extending from the center to the edge of the gas injection mechanism 100, dividing the second gas injection mechanism 102 into at least two fan-shaped sub-regions, preferably, the areas of at least two fan-shaped sub-regions are the same.

[0094] like Fig. 20As shown, taking the disc-shaped gas injection mechanism 100 in the circular reaction chamber 200 as an example, the isolation members 103 are distributed in a circumferential form along the circumference of the second gas injection mechanism 102, and the isolation members 103 and the sidewalls of the second gas injection mechanism 102 divide the second gas injection mechanism 102 into three sub-regions: a first sub-region 1021 located at the innermost radial side, a second sub-region 1022 located outside the first sub-region 1021, and a third sub-region 1023 located at the outermost radial side. In an optional embodiment, the first sub-region 1021, the second sub-region 1022, and the third sub-region 1023 are respectively connected to independent gas supply ports 300. Exemplarily, the gas supply end 300 includes several different gas sources, each sub-region is connected to several different gas sources, and a control unit (not shown) is provided between the gas source and each sub-region, such as a valve, a mass flow controller, a pressure controller, etc. The control unit controls the gas entering each sub-region separately, so that the composition and flow rate of the gas entering the first sub-region 1021, the second sub-region 1022 and the third sub-region 1023 can be the same or different, and the above parameters can be independently controlled, thereby separately controlling the flow rate or composition of the gas entering the first sub-region 1021, the second sub-region 1022 and the third sub-region 1023. In this way, the control diversity of the gas entering the reaction chamber 200 through the second gas injection mechanism 102 is increased, and a better effect of suppressing or completely eliminating the vortex gas flow in the reaction chamber is obtained.

[0095] In addition to the case where each of the above sub-areas is connected to a plurality of different gas sources, the first sub-area 1021 and the second sub-area 1022 can also be connected to the same gas source and regulated by the same control unit, while the third sub-area 1023 is connected to another gas source and regulated separately by another control unit. There are other similar combinations, as long as the gases in the sub-areas can be regulated separately, which will not be described here.

[0096] Preferably, the multiple sub-regions are multiple concentric annular regions, and the flow rate of the gas introduced into the outermost sub-region is adjusted to be not less than the flow rate of the gas introduced into the innermost sub-region; or the average molecular weight of the gas introduced into the outermost sub-region is adjusted to be not less than the average molecular weight of the gas introduced into the innermost sub-region; or the flow rate of the gas introduced into the outermost sub-region is adjusted to be not less than the flow rate of the gas introduced into the innermost sub-region, and the average molecular weight of the gas introduced into the outermost sub-region is not less than the average molecular weight of the gas introduced into the innermost sub-region. Preferably, from the innermost sub-region to the outermost sub-region, the flow rate of the gas introduced is adjusted to gradually increase; or the average molecular weight of the gas introduced is adjusted to gradually increase; or both the flow rate and the average molecular weight of the gas introduced are adjusted to gradually increase. Preferably, from the innermost sub-region to the outermost sub-region, the flow rate of the incoming gas is adjusted to gradually increase, and the flow rate of the gas in at least two adjacent sub-regions is the same; or the average molecular weight of the incoming gas is adjusted to gradually increase, and the average molecular weight of the gas in at least two adjacent sub-regions is the same; or the flow rate and average molecular weight of the incoming gas are adjusted to gradually increase, and the flow rate of the gas in at least two adjacent sub-regions is the same and the average molecular weight of the gas is the same.

[0097] by Fig. 20 As shown in the figure, along the radial direction from the inside to the outside, the flow rates of the second gas injected from the first sub-region 1021, the second sub-region 1022 and the third sub-region 1023 are F1, F2, and F3 respectively, and the average molecular weights of the injected second gases are M1, M2, and M3 respectively, wherein each sub-region is independently regulated so that: F1≤F2≤F3, or, M1≤M2≤M3, or, F1≤F2≤F3 and M1≤M2≤M3.

[0098] Since in the reaction chamber 200, the closer to the inner area, the more the gas flow needs to be adjusted and matched through fine distribution, the design of the second gas injection mechanism 102 sub-area being independently regulated can reduce the impact of the rotating gas flow on the gas flow in the inner area, which is beneficial to balance the gas injected into the reaction chamber 200 and improve the utilization rate of the gas.

[0099] The gas injection mechanism is described above by taking the upright vertical flow chamber in which the gas injection mechanism is located at the top and the carrier plate is located at the bottom as an example. It should be understood that in any type of reaction chamber, as long as the reaction chamber may generate vortices due to the rotation of the carrier plate, the gas injection mechanism provided by the present invention can be used to suppress or completely eliminate the vortex and balance the gas flow.

[0100] Accordingly, an embodiment of the present invention further provides a gas phase reaction device using the above-mentioned gas injection mechanism, referring to Figure 1The gas phase reaction device includes a reaction chamber 200, a carrier plate 201 and a gas injection mechanism 100. The carrier plate 201 is arranged in the reaction chamber 200, and the carrier plate 201 rotates during the gas phase reaction, and its rotation speed is greater than or equal to 200RPM. The gas injection mechanism 100 is arranged opposite to the carrier plate 201. The reaction chamber 200 can be a vertical flow chamber with vertical air intake, or a horizontal flow chamber with central air intake. The gas phase reaction device with the above-mentioned gas injection mechanism can reduce and suppress the generation of air flow vortices, obtain a uniform and stable gas flow field, thereby expanding the settable range of process parameters, helping to improve the utilization rate of carrier gas and source material gas, and thus can effectively reduce the cost of material growth.

[0101] The gas injection mechanism 100 of the present invention and the gas phase reaction device using the gas injection mechanism 100 are described above. In the embodiment of the present invention, the second gas injection mechanism 102 in the gas injection mechanism 100 can be implemented by various specific structures, see the following embodiments for details.

[0102] Embodiment 1

[0103] Figures 4 to 7 The structure of the second gas injection mechanism 102 in the first gas injection mechanism 100 is shown.

[0104] The second gas injection mechanism 102 includes a plurality of second gas delivery channels 1020, at least some of which are rotating gas flow channels 1026. Figure 6 and Figure 7 , respectively showing Figure 4 A side cross-sectional view of line HH in FIG. Figure 5 The cross-sectional schematic diagram of the radial direction AA is shown, and the three-dimensional perspective structure of the second gas injection mechanism is shown from a top view, so as to illustrate the structure of the rotating airflow channel 1026 in the second gas injection mechanism 102 for ejecting the rotating airflow having the tangential component and the axial component of the airflow velocity. Figure 6 and Figure 7 As shown, the rotating airflow channel 1026 includes a tubular channel 1026-2 extending from the second side 1025 to the first side 1024 and a conical channel 1026-1 connected to the tubular channel 1026-2. The top of the conical channel 1026-1 is connected to the tubular channel 1026-2, and the bottom of the conical channel 1026-1 is located on the first side of the second gas injection mechanism 102, which is the gas outlet surface, and the gas outlet surface is a non-circular gas outlet surface, for example, it can be an ellipse, a diamond, a rectangle, a triangle, a semicircle or a polygon. Preferably, as Figure 7 As shown, the cone bottom of the cone-shaped channel 1026-1 is elliptical.

[0105] Definition: The tangent line about the main axis B passing through the bottom centroid point O of the conical channel 1026-1 (the centroid of the bottom surface of the cone is the geometric center of the cone bottom) is the tangent line of point O, the straight line passing through the bottom centroid point O of the conical channel 1026-1 and parallel to the main axis B is the axial line of point O, and the tangent plane where the bottom centroid point O is located is the tangent plane about the main axis B passing through the bottom centroid point O, that is, the plane formed by the tangent line of point O and the axial line of point O.

[0106] The projection of the cone axis of the conical channel 1026-1 on the tangent plane where the centroid O of its bottom surface is located has an angle of That is, the projection of the cone axis of the conical channel 1026-1 on the tangent plane where the bottom centroid O is located can be inclined or parallel to the main axis B; the projection of the tube axis of the tubular channel 1026-2 connected to the conical channel 1026-1 on the tangent plane where the bottom centroid O of the conical channel 1026-1 is located has an angle of 1 / 2 with the main axis B. That is, the projection of the axis of the tubular channel 1026-2 on the tangent plane where the bottom surface centroid O is located can be inclined or parallel to the main axis B. and angle At least one of them is not 0, that is, if the projection of the cone axis of the conical channel 1026-1 on the tangent plane where the centroid O of its bottom surface is located is parallel to the main axis B Then the projection of the axis of the tubular channel 1026-2 on the tangent plane where the bottom centroid O of the conical channel 1026-1 is located is inclined relative to the main axis B. Or if the projection of the axis of the tubular channel 1026-2 on the tangent plane where the centroid O of the bottom surface of the conical channel 1026-1 is located is parallel to the main axis B Then the projection of the cone axis of the conical channel 1026-1 on the tangent plane where the centroid O of its bottom surface is located is inclined relative to the main axis B. Or the projection of the axis of the tubular channel 1026-2 on the tangent plane where the bottom centroid O of the conical channel 1026-1 is located is inclined relative to the main axis B. At the same time, the projection of the cone axis of the conical channel 1026-1 on the tangent plane where the centroid O of its bottom surface is located is also inclined relative to the main axis B. There is an angle between the projection of the cone axis of the conical channel 1026-1 and / or the tube axis of the tubular channel 1026-2 on the tangent plane where the bottom surface centroid O of the conical channel 1026-1 is located and the main axis B, which means that the air flow velocity of the gas ejected from the channel includes a tangential component and an axial component, thus forming a rotating air flow channel 1026.

[0107] For ease of understanding, this embodiment takes the example that the cone axis of the cone-shaped channel 1026-1 and the tube axis of the tube channel 1026-2 are both located on the tangent plane where the bottom centroid O of the cone-shaped channel 1026-1 is located. Figure 4 and Figure 6 As shown, Figure 6 Display as Figure 4 The side view of the line HH in the figure is as follows: Figure 4 The tangent plane where the bottom centroid O of the conical channel 1026-1 of the rotating airflow channel 1026 marked in the figure is located. The bottom centroid of the conical channel 1026-1 is defined as point O (the bottom centroid of the conical channel is the geometric center of the bottom of the cone), the top of the cone is point O1, the end point of the tube axis of the tubular channel 1026-2 located at the connection between the tubular channel 1026-2 and the conical channel 1026-1 is point O2, and the geometric center of one end of the tubular channel 1026-2 located at the second side 1025 of the second gas injection mechanism 102 is point O3, that is, the line connecting point O and point O1 is the cone axis OO1 of the conical channel 1026-1, the line connecting point O2 and point O3 is the tube axis O2O3 of the tubular channel 1026-2, and the straight line passing through the bottom centroid O of the conical channel 1026-1 and parallel to the main axis B is the axial line ON of point O. In this case, the projection of the cone axis OO1 of the cone-shaped channel 1026-1 on the tangent plane where the bottom centroid O is located is the cone axis OO1 of the cone-shaped channel 1026-1 itself, and the projection of the tube axis O2O3 of the tubular channel 1026-2 connected to the cone-shaped channel 1026-1 on the tangent plane where the bottom centroid O of the cone-shaped channel 1026-1 is located is the tube axis O2O3 of the tubular channel 1026-2 itself. At this time, there is an angle between the cone axis OO1 of the cone-shaped channel 1026-1 and ON (ON is parallel to the main axis B). The tube axis O2O3 of the tubular channel 1026-2 is angularly spaced from O2N' (O2N' is parallel to the main axis B). And, the angle and angle At least one of them is not 0.

[0108] As for the case where the cone axis of the conical channel 1026-1 and the tube axis of the tubular channel 1026-2 are not located on the tangent plane where the bottom centroid O of the conical channel 1026-1 is located, it is not difficult to understand that as long as there is an angle between the projection of the cone axis of the conical channel 1026-1 and / or the tube axis of the tubular channel 1026-2 on the tangent plane where the bottom centroid O of the conical channel 1026-1 is located and the axial line of the point O (parallel to the main axis B) (generally speaking, in terms of actual processing and application, the angle is not 90°), the air flow velocity of the gas ejected from the second gas delivery channel 1020 can include a tangential component and an axial component, and the second gas delivery channel 1020 is formed into a rotating air flow channel 1026.

[0109] The second gas provided by the external gas supply end 300 flows into the reaction chamber 200 through the rotating gas flow channel 1026. During the reaction process, the arrangement of multiple rotating gas flow channels 1026 on the first side 1024 of the second gas injection mechanism 102 forms a rotating gas flow when the second gas is ejected from the rotating gas flow channel 1026. The rotating gas flow has both axial velocity and momentum as well as tangential velocity and momentum.

[0110] In this embodiment, the arrangement of the rotating airflow channel 1026 on the second gas injection mechanism makes the rotating direction of the rotating airflow consistent with the rotating direction of the carrier plate 201 arranged opposite to the gas injection mechanism 100 in the gas phase reaction device during the reaction process.

[0111] In this embodiment, by adjusting The angle of rotation is used to adjust the ratio of the tangential component to the axial component of the rotating airflow velocity. The larger it is, the greater the ratio of the tangential component to the axial component, and the more obvious the rotational characteristics of the rotating airflow are.

[0112] The ratio of the tangential component to the axial component of the speed of the rotating airflow should not be too large, otherwise it will have a significant impact on the airflow in the internal area, which is not conducive to the balanced injection of gas into the reaction chamber 200. Preferably, Preferably,

[0113] Preferably, the angle with horns At least one of them is not less than 5°, so that the generated rotating airflow effect is more obvious.

[0114] Preferably, in each rotating airflow channel 1026, the angle with horns The sizes of the tubular channel 1026-2 and the cone axis of the conical channel 1026-1 are the same, and the tube axis of the tubular channel 1026-2 and the cone axis of the conical channel 1026-1 are parallel or collinear with each other, which makes it easier to control the direction of the rotating airflow.

[0115] Optionally, in the second gas injection mechanism 102, at least part of the rotating gas flow channel 1026 has at least one of the following features: (1) the angle Same; (2) The above angle (3) The areas of the cone bottoms of the cone-shaped channels 1026-1 are the same. That is, the rotating gas flow channels 1026 can have the same structure or different structures. The rotating gas flow channels 1026 are specifically designed according to different reaction chambers and process requirements, so as to minimize the eddy current in the gas flow field near the edge of the carrier plate 201.

[0116] It should be pointed out that each rotating airflow channel 1026 is not limited to only including one tubular channel 1026-2 and one conical channel 1026-1. The rotating airflow channel 1026 may include an unlimited number of tubular channels 1026-2 and conical channels 1026-1. For example, two tubular channels 1026-2 are connected to one conical channel 1026-1, or one tubular channel 1026-2 is connected to two conical channels 1026-1. Taking one tubular channel 1026-2 connected to two conical channels 1026-1 as an example, the two conical channels 1026-1 are stacked, the tubular channel 1026-2 is connected to the top of the first conical channel, the first conical channel is connected to the second conical channel, and the bottom of the second conical channel is located on the air outlet side. At this time, the bottom surface centroid O is the bottom surface centroid of the second conical channel. The projection of the cone axis of the first cone-shaped channel on the tangent plane where the centroid O of the bottom surface is located has an angle of 1. There is an angle between the projection of the cone axis of the second cone-shaped channel 1026-1 on the tangent plane where the bottom surface centroid O is located and the main axis B. The projection of the axis of the tubular channel on the tangent plane where the centroid O of the bottom surface is located has an angle of if only and If at least one of them is not 0, a rotating airflow channel can be formed.

[0117] In this embodiment, the second gas delivery channel 1020 is distributed in the second gas injection mechanism 102 . Optionally, at least part of the second gas delivery channels 1020 are distributed in an annular or fan-shaped manner in the peripheral area of ​​the gas injection mechanism 100. Preferably, the second gas delivery channels 1020 are arranged to form a concentric annular area; preferably, the second gas delivery channels 1020 are arranged to form a plurality of concentric annular areas, each of which has the same number of second gas delivery channels 1020, or at least two concentric annular areas have different numbers of second gas delivery channels 1020, and the specific number distribution depends on the process requirements; preferably, the second gas delivery channels 1020 in each concentric annular area are arranged in radial alignment, preferably, the second gas delivery channels 1020 in each concentric annular area are arranged in a staggered manner in the radial direction; preferably, the area of ​​the outermost annular area is not less than the area of ​​the innermost annular area; or the area of ​​the concentric annular area gradually increases from the innermost annular area to the outermost annular area; or the area of ​​the concentric annular area gradually increases from the innermost annular area to the outermost annular area, and the areas in at least two adjacent annular areas are the same.

[0118] by Figure 4 and Figure 5 Taking the disc-shaped gas injection mechanism 100 as an example, the second gas delivery channels 1020 are distributed along the circumference in the second gas injection mechanism 102. Optionally, when the second gas delivery channels 1020 are distributed along the circumference in the second gas injection mechanism 102, they can be distributed along one circumference or multiple circumferences in the second gas injection mechanism 102.

[0119] When the second gas delivery channels 1020 are distributed along multiple circumferences in the second gas injection mechanism 102, the multiple circumferences are concentric circumferences or non-concentric circumferences. Preferably, the second gas delivery channels 1020 are distributed along multiple concentric circumferences in the second gas injection mechanism 102, for example, Figure 4 and Figure 5As shown, the second gas delivery channels 1020 are exemplarily shown to be distributed in the second gas injection mechanism 102 along three concentric circles, namely the first circle 110, the second circle 120 and the third circle 130. The number of the second gas delivery channels 1020 on each circle can be the same or different, and the size of the second gas delivery channels 1020 on each circle can be the same or different, and at least one circle contains a rotating gas flow channel 1026. When the rotating gas flow channels 1026 are distributed on multiple circles, the number of the rotating gas flow channels 1026 on each circle can be the same or different. Regardless of whether the number of rotating airflow channels 1026 on each circumference is the same, from the innermost annular area to the outermost annular area of ​​the concentric annular areas (i.e., from the first circumference 110 to the third circumference 130), the rotating airflow channels 1026 have at least one of the following characteristics: (1) the area of ​​the cone bottom in the outermost annular area is not less than the area of ​​the cone bottom in the innermost annular area; or the area of ​​the cone bottom of the conical channel 1026-1 gradually increases; or the area of ​​the cone bottom of the conical channel 1026-1 gradually increases, and the areas of the cone bottoms of at least two adjacent annular areas are the same; (2) the angle in the outermost annular area is equal to the area of ​​the cone bottom. Not less than the angle in the innermost annular area or angle gradually increase; or The angles in at least two adjacent annular regions gradually increase. Same; (3) Angle in the outermost annular area Not less than the angle in the innermost annular area or angle gradually increase; or gradually increases and at least two adjacent annular regions The same. Therefore, through and The design is used to adjust the proportional distribution of the tangential component and the axial component of the velocity of the rotating airflow ejected from each annular area, so that the difference between the airflow velocity direction of the airflow ejected from the rotating airflow channel 1026 on the first circle 110 close to the inner area (i.e., the first gas injection mechanism 101) and the airflow velocity direction of the airflow ejected from the first gas injection mechanism 101 (the first gas delivery channel 1010 is a vertical airflow channel) is minimized, thereby reducing the impact on the airflow in the internal gas phase reaction area, and the tangential velocity and momentum of the airflow ejected from the rotating airflow channel 1026 on the second circle 120 and the third circle 130 are gradually increased to reduce the impact of flow mixing in the edge area, thereby improving the stability of the overall airflow, and at the same time helping to improve the utilization rate of the carrier gas and the source material gas, thereby effectively reducing the cost of material growth, and at the same time reducing the particle defects in the growth material on the carrier plate 201 in the reaction chamber 200, thereby improving the product yield.

[0120] It should be noted that, preferably, the angles of the rotating airflow channels contained in the same concentric annular area are However, in some cases, in order to obtain a better spatial distribution in the rotating airflow, it may be selected that the angles of each rotating airflow channel in the same concentric annular area are When the angles of the rotating airflow channels contained in the same concentric annular area are When the angles of the above-mentioned different concentric annular regions are not exactly the same, When compared, the angles in each concentric annular area is the angle of each rotating airflow channel 1026 in each concentric annular region Similarly, the angle The same is true for the design, which will not be repeated here.

[0121] Figures 8 to 10 A deformation of the second gas injection mechanism 102 in the first gas injection mechanism 100, namely the second gas injection mechanism 102', is shown to illustrate the structure of the rotating gas flow channel 1026' in which the velocity of the ejected gas flow has tangential, axial and radial components.

[0122] like Figure 8 As shown, the second gas delivery channel 1020' in the second gas injection mechanism 102' of the present embodiment includes a rotating airflow channel 1026'. The structure of the rotating airflow channel 1026' is similar to that of the rotating airflow channel 1026, including a tubular channel 1026'-2 and a conical channel 1026'-1. The cone top of the conical channel 1026'-1 is connected to the tubular channel 1026'-2. Similarly, the tangent plane about the main axis B passing through the bottom surface centroid point O of the conical channel 1026'-1 is defined as the tangent plane where the bottom surface centroid point O of the conical channel 1026'-1 is located. The projection of the cone axis of the conical channel 1026'-1 on the tangent plane where the bottom surface centroid point O is located has an angle with the main axis B. The projection of the axis of the tubular channel 1026'-2 connected to the conical channel 1026'-1 on the tangent plane where the bottom centroid O of the conical channel 1026'-1 is located has an angle of 1:1 with respect to the main axis B. And the angle and angle At least one of the angles is not 0. The difference between the rotating airflow channel 1026' and the rotating airflow channel 1026 is that: there is an angle θ1 between the vertical plane where the cone axis of at least part of the rotating airflow channel 1026' is located and the tangent plane where the bottom centroid of the cone-shaped channel 1026'-1 is located, there is an angle θ2 between the vertical plane where the tube axis is located and the tangent plane where the bottom centroid of the cone-shaped channel 1026'-1 is located, and at least one of the angles θ1 and θ2 is not 0, so that the airflow velocity of the gas ejected from at least part of the rotating airflow channel 1026' includes a tangential component, an axial component and a radial component.

[0123] like Fig. 9 As shown, it is shown Figure 8 A partial enlarged view of the circle P portion. The cone bottom centroid of the cone-shaped channel 1026'-1 is defined as point O, the cone top is point O1, the end point of the tube axis of the tubular channel 1026'-2 at the connection between the tubular channel 1026'-2 and the cone-shaped channel 1026'-1 is point O2, and the geometric center of one end of the tubular channel 1026'-2 located on the second side 1025 of the second gas injection mechanism 102' is point O3, that is, the line connecting point O and point O1 is the cone axis OO1 of the cone-shaped channel 1026'-1, and the line connecting point O2 and point O3 is the cone axis OO1 of the tubular channel 102 The tangent plane of the tube axis O2O3 of 6'-2 passing through point O about the main axis B is the tangent plane P1 where point O is located, that is, the plane formed by the tangent line of point O (the tangent line about the main axis B at point O) and the axial line of point O (the straight line passing through point O and parallel to the main axis B), the plane formed by the cone axis OO1 and the axial line of point O is the cone axis vertical plane P2; the plane passing through point O2 and parallel to the tangent plane P1 is defined as P3, the plane formed by the tube axis O2O3 and the axial line of point O2 (the straight line passing through point O2 and parallel to the main axis B) is the tube axis vertical plane P4. Similarly, Fig. 9 As shown, the tangent plane P1 at point O forms an angle θ1 with the cone axis perpendicular plane P2, and the tube axis perpendicular plane P4 forms an angle θ2 with the plane P3, and at least one of the angles θ1 and θ2 is not equal to 0°. If θ1 = 0° and θ2 = 0°, the structure is Figure 7 The rotating airflow channel 1026 shown (the cone axis and the tube axis are both located on the tangent plane where the bottom surface centroid point O is located, and the airflow velocity of the ejected gas only includes the tangential component and the axial component).

[0124] Preferably, the angle θ1 and the angle θ2 are of the same size, and the vertical plane where the cone axis is located is in the same direction of inclination with respect to the tangent plane where the bottom centroid O of the conical channel 1026'-1 is located.

[0125] The ratio of the radial component to the axial component of the speed of the rotating airflow should not be too large, otherwise it will have a significant impact on the airflow in the inner region, which is not conducive to the balanced injection of gas into the reaction chamber 200. Preferably, 0°≤θ1≤30°, 0°≤θ2≤30°.

[0126] Thus, the structure of the rotating airflow channel 1026' is formed as follows: Fig.10 As shown, the tubular channel 1026'-2 and / or the conical channel 1026'-1 are tilted relative to the tangent plane (the plane formed by the tangential line and the axial line thereat) of the bottom centroid of the conical channel 1026'-1 of the rotating airflow channel 1026 about the main axis B.

[0127] The gas velocity injected by the rotating gas flow channel 1026' of this embodiment includes not only axial and tangential components but also radial components. For reaction chambers of different structural proportions and usage scenarios, introducing a rotating gas flow including a radial component can further reduce eddy currents.

[0128] In general, the ratio of the tangential component to the axial component of the cone axis vector is The ratio of the tangential component to the axial component of the tube axis vector is The ratio of the radial component to the axial component of the cone axis vector is The ratio of the radial component to the axial component of the tube axis vector is Preferably, by adjusting the rotation airflow channel 1026' θ1 and θ2 make the ratio of the tangential component to the axial component of the rotating airflow velocity ≥0.1, and the ratio of the radial component to the axial component ≤0.5, so as to reduce the vortex and the impact on the airflow in the internal reaction area.

[0129] Preferably, the second gas delivery channel 1020 is arranged into a plurality of concentric annular regions, and in the innermost annular region, θ1=0° and θ2=0°, that is, the air flow velocity of the air flow ejected from the innermost annular region does not include a radial component, and the rotating air flow channel 1026' is only located in the remaining annular regions outside the innermost annular region. Preferably, in the remaining concentric annular regions except the innermost annular region, by adjusting the rotating air flow channel 1026' in each concentric annular region, θ1 and θ2, so that the ratio of the radial component to the axial component of the speed of the rotating airflow ejected from the remaining concentric annular areas is the same; or the ratio of the radial component to the axial component of the speed of the rotating airflow ejected from the outermost annular area is not less than the ratio of the radial component to the axial component of the speed of the rotating airflow ejected from the sub-inner annular area adjacent to the innermost annular area; or the ratio of the radial component to the axial component of the speed of the rotating airflow gradually increases from the sub-inner annular area to the outermost annular area of ​​the concentric annular areas.

[0130] Embodiment 2

[0131] Figures 11 to 15 The structure of the second gas injection mechanism 102 ″ in the second gas injection mechanism 100 is shown.

[0132] like Figures 11 to 15 As shown, the second gas delivery channel 1020" in the second gas injection mechanism 102" of the present embodiment includes a plurality of pipes 1020"-1 and at least one annular groove 1027, wherein at least one annular groove 1027 is connected to the plurality of pipes 1020"-1 to cooperate with the outflow of gas in the pipes 1020"-1, and the opening side of the annular groove 1027 (i.e., the side away from the pipe 1020"-1) is the gas outlet side facing the carrier plate 201. The annular groove 1027 may be any one of a conical groove, a trapezoidal groove, a rectangular groove, an arc groove and a polygonal groove, that is, the cross-sectional shape of the annular groove 1027 in the thickness direction of the second gas injection mechanism 102" is any one of a conical, trapezoidal, rectangular, arcuate and polygonal shape. Preferably, in the same second gas injection mechanism 102", the annular groove 1027 is a groove with the same cross-sectional shape. As shown Fig.12 As shown, the conduit 1020"-1 extends from the second side 1025 to the first side 1024 of the second gas injection mechanism 102".

[0133] like Fig.11 As shown, a plurality of pipelines 1020"-1 can be distributed in the second gas injection mechanism 102" in any manner, for example, they can be distributed in a ring shape or a fan shape. Preferably, the pipelines 1020"-1 are distributed in a ring shape, and more preferably, they can be distributed along a plurality of concentric annular regions. The number of pipelines 1020"-1 in each concentric annular region is the same; or, the number of pipelines 1020"-1 in the outermost annular region is greater than the number of pipelines 1020"-1 in the innermost annular region; or, the number of pipelines 1020"-1 gradually increases from the innermost annular region to the outermost annular region of a plurality of concentric annular regions; or, the number of pipelines 1020"-1 gradually increases from the innermost annular region to the outermost annular region of a plurality of concentric annular regions, and the number of pipelines 1020"-1 in at least two adjacent annular regions is the same. The specific quantity distribution of pipelines 1020"-1 depends on the process requirements. For example, as Fig.11 As shown, the pipeline 1020"-1 is distributed along three concentric annular areas, including an inner annular area, a middle annular area and an outer annular area, and the corresponding numbers of pipelines 1020"-1 are N1, N2, and N3, respectively, where N1=N2=N3; or N3>N1, N1≤N2≤N3.

[0134] like Fig.12As shown, the number of the annular grooves 1027 can be one or more.

[0135] When the number of the annular groove 1027 is one, the annular groove 1027 is connected to all the pipelines 1020"-1 in the second gas injection mechanism 102", and the pipelines 1020"-1 can be distributed in one annular area or along multiple concentric annular areas.

[0136] Preferably, if Fig.12 As shown, the number of the annular grooves 1027 is multiple, and they are formed into multiple concentric annular grooves 1027. The pipeline 1020"-1 is distributed along multiple concentric annular areas. Each of the multiple concentric annular grooves 1027 is arranged corresponding to at least one concentric annular area, so that each concentric annular groove 1027 is connected to the pipeline 1020"-1 in the corresponding concentric annular area. In an optional embodiment, the number of annular grooves 1027 is the same as the number of concentric annular areas, and each of the multiple annular grooves 1027 is arranged corresponding to a concentric annular area, that is, the annular grooves 1027 correspond one-to-one with the concentric circular areas. Each annular groove 1027 is connected to the pipeline 1020"-1 distributed on the corresponding concentric annular area, and the pipeline 1020"-1 distributed on each concentric annular area corresponding to each annular groove 1027 is distributed in at least one ring. In other optional embodiments, the number of annular grooves 1027 and the number of concentric annular areas may also be different. For example, the number of annular grooves 1027 is multiple and less than the number of concentric annular areas, and each of the multiple annular grooves 1027 is arranged corresponding to at least one of the multiple concentric annular areas, so that each concentric annular groove 1027 is connected to the pipe 1020"-1 in the corresponding concentric annular area. For example, at least two adjacent concentric annular areas among the multiple concentric annular areas are connected to one of the multiple annular grooves 1027, and the remaining concentric annular areas are connected to the remaining annular grooves 1027 one-to-one.

[0137] Definition: The endpoint of the tube axis of each pipeline 1020"-1 at the connection between the pipeline 1020"-1 and the annular groove 1027 is point O1, and the tangent plane passing through the O1 point about the main axis B is the tangent plane where the O1 point of the pipeline is located. In this embodiment, at least part of the second gas delivery channel 1020" is a rotating airflow channel 1026", and the pipeline in the rotating airflow channel 1026" is referred to as a tubular channel 1026"-2. The projection of the tube axis of the tubular channel 1026"-2 in the rotating airflow channel 1026" on the tangent plane where the corresponding O1 point is located has an angle with the main axis B. The angle is not 0, so that the gas flowing out from the second gas injection mechanism 102" forms a rotating airflow, the airflow velocity of the rotating airflow includes an axial component and a tangential component, and the rotation direction of the rotating airflow is consistent with the rotation direction of the carrier plate 201 during the reaction process.

[0138] For ease of understanding, this embodiment takes the example that the axis of the tubular channel 1026"-2 is located on the tangent plane where the point O1 of the tubular channel is located. Fig.13 and Fig.14 As shown, Fig.14 Display as Fig.13 The side view of the line HH in the figure is as follows: Fig.13 The tangent plane where the point O1 of the middle tubular channel 1026"-2 is located.

[0139] like Fig.14 As shown, the end point of the tube axis of the tubular channel 1026"-2 in the rotating airflow channel 1026" at the connection between the tubular channel 1026"-2 and the annular groove 1027 is defined as point O1 (i.e., the lower end point of the tube axis), the geometric center of the tube axis of the tubular channel 1026"-2 at one end of the second side 1025 of the second gas injection mechanism 102" is point O3 (i.e., the upper end point of the tube axis), and the tube axis of the tubular channel 1026"-2 is O1O3. In this case, the projection of the tube axis O1O3 of the tubular channel 1026"-2 on the tangent plane where its point O1 is located is the tube axis O1O3 itself. At this time, the tube axis O1O3 of the tubular channel 1026"-2 is aligned with the main axis B (refer to Fig.14 The straight line O3B') shown parallel to the main axis B has an angle horn Not 0. That is, the tubular channel 1026"-2 in the rotating airflow channel 1026" is inclined relative to the main axis B. Optionally, the tubular channel 1020"-1 in the second gas injection mechanism 102" may all be tubular channels 1026"-2 inclined relative to the main axis B; or may be tubular channels 1026"-2 that are partially parallel to the main axis B and partially inclined relative to the main axis B. The tubular channel 1026"-2 inclined relative to the main axis B makes the airflow velocity of the gas flowing out of the second gas injection mechanism 102" include an axial component and a tangential component, thereby forming a rotating airflow, and the rotation direction of the rotating airflow is consistent with the rotation direction of the carrier plate 201 during the reaction process.

[0140] For the case where the axis of the tubular channel 1026"-2 is not located on the tangent plane where its point O1 is located, it is not difficult to understand that as long as there is an angle between the projection of the axis of the tubular channel 1026"-2 on the tangent plane where its point O1 is located and the main axis B, the air flow velocity of the gas ejected from the second gas delivery channel 1020" can include an axial component and a tangential component, thereby forming a rotating airflow.

[0141] In this embodiment, by adjusting the angle To adjust the ratio of the tangential component to the axial component of the rotating airflow velocity. The larger the value, the greater the ratio of the tangential component to the axial component, and the more obvious the rotation characteristics of the rotating airflow. However, the ratio of the tangential component to the axial component of the rotating airflow velocity should not be too large, otherwise it will have a greater impact on the airflow in the internal area, which is not conducive to the balanced injection of gas into the reaction chamber 200. Preferably,

[0142] In this embodiment, in the tubular channel 1026"-2 inclined relative to the main axis B, the angle between the projection of the axis of at least part of the tubular channel 1026"-2 on the tangent plane where the O1 point is located and the main axis B is When the second gas injection mechanism 102" includes a plurality of concentric annular grooves 1027, the tubular channel 1026"-2 is distributed along a plurality of concentric annular regions, and the plurality of concentric annular grooves 1027 correspond to the plurality of concentric annular regions one by one, preferably, the angle between the projection of the tube axis of the tubular channel 1026"-2 distributed along the same concentric annular region on the tangent plane where the O1 point is located and the main axis B is Preferably, the angle between the projection of the tube axis of the tubular channel 1026"-2 distributed in each concentric annular region on the tangent plane where the O1 point is located and the main axis B is Preferably, the angle between the projection of the axis of the tubular channel 1026"-2 in the outermost annular region on the tangent plane where the O1 point is located and the main axis B is Not less than the angle between the projection of the axis of the tubular passage 1026"-2 in the innermost annular region on the tangent plane where the O1 point is located and the main axis B Preferably, from the innermost annular region to the outermost annular region of the plurality of concentric annular regions, the angle between the projection of the axis of the tubular channel 1026"-2 on the tangent plane where the O1 point is located and the main axis B is Gradually increase, or angle The angles in at least two adjacent annular regions increase gradually. The same. For example, Fig.11As shown, the tubular channel 1026"-2 is distributed along three concentric annular regions, including an inner annular region, a middle annular region and an outer annular region. The angles between the projection of the tube axis of the corresponding tubular channel 1026"-2 on the tangent plane where the O1 point is located and the main axis B are respectively in, or or

[0143] It should be noted that, preferably, the angles of the rotating airflow channels contained in the same concentric annular area are However, in some cases, in order to obtain a better spatial distribution in the rotating airflow, it may be selected that the angles of each rotating airflow channel in the same concentric annular area are When the angles of the rotating airflow channels contained in the same concentric annular area are When the angles of the above-mentioned different concentric annular regions are not exactly the same, When compared, the angles in each concentric annular area is the angle of each rotating airflow channel 1026" in each concentric annular region The average value of .

[0144] Accordingly, the specific structure (e.g., angle) of the second gas delivery channel 1020" in the second gas injection mechanism 102" can be modified according to different reaction chambers and process requirements. ) is designed to adjust the proportional distribution of the tangential component and the axial component of the velocity of the rotating airflow ejected from each annular area, such as the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from each concentric annular area is the same, or the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from the outermost annular area is not less than the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from the innermost annular area, or the ratio of the tangential component to the axial component of the velocity of the rotating airflow gradually increases from the innermost annular area to the outermost annular area of ​​the concentric annular areas, thereby minimizing the vortex in the gas flow field near the edge of the carrier plate 201, reducing the impact on the airflow in the internal gas phase reaction area, and improving the stability of the overall airflow.

[0145] Preferably, the number of the annular grooves 1027 is multiple, and when a plurality of concentric annular grooves 1027 are formed, the opening widths of the concentric annular grooves 1027 are the same, or the opening width of the outermost annular groove 1027 is greater than the opening width of the innermost annular groove 1027; or the opening widths of the concentric annular grooves 1027 gradually increase from the innermost annular groove 1027 to the outermost annular groove 1027; or the opening widths of the concentric annular grooves 1027 gradually increase from the innermost annular groove 1027 to the outermost annular groove 1027. Increase, and the opening widths of at least two adjacent annular grooves 1027 are the same; or the opening area of ​​the outermost annular groove 1027 is greater than the opening area of ​​the innermost annular groove 1027, or the opening areas of each concentric annular groove 1027 gradually increase from the innermost annular groove 1027 to the outermost annular groove 1027; or the opening area of ​​each concentric annular groove 1027 gradually increases from the innermost annular groove 1027 to the outermost annular groove 1027, and the opening areas of at least two adjacent annular grooves 1027 are the same.

[0146] For example, Fig.12 and 15 As shown, the pipe 1020"-1 is distributed along three concentric annular regions, and the annular groove 1027 includes three concentric annular grooves from the inside to the outside: a first annular groove 10271, a second annular groove 10272 and a third annular groove 10273. The first annular groove 10271, the second annular groove 10272 and the third annular groove 10273 correspond to the three concentric annular regions one by one, and are respectively connected to the pipe 1020"-1 in the concentric annular regions. Optionally, the plurality of concentric annular grooves 1027 are arranged from the inside to the outside (for example Fig.15 As shown, from the first annular groove 10271 to the third annular groove 10273, the corresponding groove opening widths are d1, d2, and d3, and the corresponding groove opening areas are S1, S2, and S3, respectively. The opening widths of the annular grooves 1027 are the same, for example Fig.15 d1=d2=d3; or the opening width d3 of the annular groove 1027 is greater than d1, d1≤d2≤d3; or the opening area S3 of the annular groove 1027 is greater than S1, S1≤S2≤S3.

[0147] The specific structure of the annular groove 1027 depends on the process requirements, which is beneficial to the process growth process. The opening width of the annular groove 1027, the opening area of ​​the annular groove 1027 and the material growth characteristics further optimize the rotating airflow.

[0148] Figures 16 to 19A deformation of the second gas injection mechanism 102" in the second gas injection mechanism 100, namely the second gas injection mechanism 102"', is shown to illustrate the structure of the rotating gas flow channel 1026"' in which the velocity of the ejected gas flow has tangential, axial and radial components.

[0149] Reference Figures 16 to 19 In this embodiment, at least part of the second gas delivery channel 1020"' in the second gas injection mechanism 102"' is a rotating gas flow channel 1026"', and the structure of the rotating gas flow channel 1026"' is similar to that of the rotating gas flow channel 1026", including a tubular channel 1026"'-2 and an annular groove 1027', and the projection of the tube axis of the tubular channel 1026"'-2 on the tangent plane where the O1 point is located has an angle with the main axis B. horn is not 0, so that the air flow velocity of the gas ejected from the rotating air flow channel 1026"' includes a tangential component. The difference between the rotating air flow channel 1026"' and the rotating air flow channel 1026" is that the air flow velocity of the gas ejected from the rotating air flow channel 1026"' also includes a radial component. Specifically, Fig.17 , showing Fig.16 The partial enlarged view of the P' portion. There is an angle θ between the vertical plane where the tube axis O1O3 of at least part of the rotating gas flow channel 1026"' is located and the tangent plane where the point O1 is located, wherein the point O1 is the end point of the tube axis of the tubular channel 1026"'-2 at the connection between the tubular channel 1026"'-2 and the annular groove 1027' (i.e., the lower end point of the tube axis), and the point O3 is the other end point of the tube axis of the tubular channel 1026"'-2, located at the geometric center of one end of the second side 1025 of the second gas injection mechanism 102"' The center of the tubular channel 1026"'-2 is the upper end point of the tube axis, and the straight line passing through point O1 and parallel to the main axis B is the axial line O1O' of point O1. The vertical plane where the tube axis O1O3 of the tubular channel 1026"'-2 is located is the plane formed by the tube axis O1O3 and the axial line O1O'; the tangent plane passing through point O1 about the main axis B is the tangent plane where point O1 of the tubular channel 1026"'-2 is located, that is, the plane formed by the tangent line of point O1 (the tangent line about the main axis B at point O1) and the axial line O1O'.

[0150] Reference Fig.18 , while referring to Fig.19 The annular groove 1027' forms a first intersection line and a second intersection line with the surface where the gas outlet side is located. Fig.19 As an example, the third annular groove 10273' forms a first intersection line L1 and a second intersection line L2 with the surface where the gas outlet side is located, and a plane passing through the main axis B and the axial line O1O' is defined as the P0 plane (along Fig.16The first intersection line L1 and the P0 plane have a first intersection point M, the second intersection line L2 and the P0 plane have a second intersection point N, and an angle γ is formed between O1M and O1N. The angle bisector of the angle γ is O1Q, and an angle δ is formed between O1Q and the axial line O1O', wherein at least one of the angle δ and the angle θ is not 0. An angle γi is formed between O1M and O1O', and an angle γo is formed between O1N and O1O', and the magnitude of δ is half of the difference Δγ between the angle γi and the angle γo. Preferably, the angle δ is equal to the angle θ, and the tubular channel 1026"'-2 and the annular groove 1027' are both inclined relative to the tangent plane where the point O1 is located, and the inclination directions of the two are consistent, that is, the end of the angle bisector O1Q close to the carrier plate 201 and the end of the tube axis close to the carrier plate 201 are both inclined in the same direction away from or close to the main axis. For example, both are inclined in the same direction away from the main axis B. In particular, when δ = 0 and θ = 0, that is, Fig.12 The structure shown (the tube axis of the tubular channel and the angular bisector of the annular groove are both located on the tangent plane where the point O1 is located, and the gas flow velocity of the ejected gas only includes the tangential component and the axial component).

[0151] The gas flow velocity of the gas injected by the inclined tubular channel 1026"'-2 and the annular groove 1027' of the present embodiment includes not only axial and tangential components, but also radial components. For reaction chambers of different structural proportions and usage scenarios, introducing a rotating gas flow including a radial component in the above-mentioned gas flow velocity can further reduce eddy currents.

[0152] In general, the ratio of the tangential component to the axial component of the tube axis vector is The ratio of the radial component to the axial component of the tube axis vector is The ratio of the radial component to the axial component of the annular groove angle bisector O1Q vector is tanδ. Preferably, by adjusting the rotation airflow channel 1026' θ and δ, so that the ratio of the tangential component to the axial component of the air flow velocity is ≥0.1, and the ratio of the radial component to the axial component is ≤0.5, so as to reduce the vortex and reduce the impact on the air flow in the internal reaction area.

[0153] Preferably, the second gas delivery channel 1020"' is arranged into a plurality of concentric annular regions, and in the innermost annular region, θ=0° and δ=0°, that is, the rotating airflow channel 1026"' that makes the velocity of the ejected rotating airflow include a radial component is not located in the annular region closest to the middle region, that is, the rotating airflow channel 1026"' is only located in the remaining annular regions outside the innermost annular region. Preferably, in the remaining concentric annular regions except the innermost annular region, by adjusting the rotating airflow channel 1026"' in each concentric annular region θ and δ, so that the ratio of the radial component to the axial component of the speed of the rotating airflow ejected from the remaining concentric annular regions is the same; or the ratio of the radial component to the axial component of the speed of the rotating airflow ejected from the outermost annular region is not less than the ratio of the radial component to the axial component of the speed of the rotating airflow ejected from the sub-inner annular region adjacent to the innermost annular region; or the ratio of the radial component to the axial component of the speed of the rotating airflow gradually increases from the sub-inner annular region to the outermost annular region of the concentric annular regions.

[0154] Embodiment 3

[0155] This embodiment provides a gas injection mechanism, which is used in a gas phase reaction device, for example, a gas phase deposition device. Figure 1 As shown, the gas phase reaction device also includes a reaction chamber 200, and the gas injection mechanism 100 is arranged opposite to the carrier plate 201, and is used to deliver the reaction gas to the reaction chamber 200. In this embodiment, the second gas injection mechanism 102 in the gas injection mechanism 100 includes a plurality of second gas delivery channels 1020, and the second gas delivery channels 1020 can all be the structure of any one of the rotating gas flow channels in Example 1 to Example 2, can be a combination of any rotating gas flow channels in Example 1 to Example 2, and can also be a combination of a vertical gas flow channel and any one or more rotating gas flow channels in Example 1 to Example 2. The specific type of the second gas delivery channel can be determined according to different gas phase deposition devices, usage scenarios and process requirements.

[0156] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A gas injection mechanism for a gas phase reaction device, characterized in that: The gas injection mechanism comprises: A first gas injection mechanism, used for delivering a first gas, located in a middle area of ​​the gas injection mechanism, wherein the first gas injection mechanism comprises a plurality of first gas delivery channels; a second gas injection mechanism, for delivering a second gas, located in a peripheral area of ​​the gas injection mechanism and surrounding the first gas injection mechanism; the second gas injection mechanism comprises a first side and a second side arranged opposite to each other, the first side being configured as a gas outlet side; the second gas injection mechanism comprises a plurality of second gas delivery channels, at least some of the second gas delivery channels being rotating gas flow channels; Among them, each of the rotating airflow channels includes a tubular channel extending from the second side to the first side and a conical channel connected to the tubular channel, and the bottom of the conical channel is located on the first side, so that the airflow velocity of the second gas ejected along the rotating airflow channel includes an axial component and a tangential component, and the ratio of the tangential component to the axial component is ≥0.

1. The second gas is ejected along the rotating airflow channel to form a rotating airflow, and the rotation direction of the rotating airflow is consistent with the rotation direction of the supporting plate located in the gas phase reaction device and arranged opposite to the gas injection mechanism during the reaction process.

2. The gas injection mechanism according to claim 1, characterized in that: During the gas phase reaction, the average molecular weight of the second gas is greater than or equal to the average molecular weight of the first gas.

3. The gas injection mechanism according to claim 2, characterized in that: The first gas is a reaction source gas and a carrier gas, Used to react to generate the target product, the second gas is one or more of a purge gas, a carrier gas, and a reaction source gas, the second gases do not react with each other, or the second gases react with each other but do not generate the target product.

4. The gas injection mechanism according to claim 1, characterized in that: The second gas injection mechanism covers the edge of the carrier plate, and the coverage area does not exceed 36% of the area of ​​the carrier plate, or the second gas injection mechanism is located outside the carrier plate.

5. The gas injection mechanism according to claim 1, characterized in that: The second gas delivery channels are arranged into at least one concentric annular area, and the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from each of the rotating airflow channels contained in the same concentric annular area is the same.

6. The gas injection mechanism according to claim 1, characterized in that: The second gas delivery channels are arranged into a plurality of concentric annular regions, and the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from each concentric annular region is the same.

7. The gas injection mechanism according to claim 1, characterized in that: The second gas delivery channel is arranged into a plurality of concentric annular areas, and the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from the outermost annular area is not less than the ratio of the tangential component to the axial component of the velocity of the rotating airflow ejected from the innermost annular area.

8. The gas injection mechanism according to claim 1, characterized in that: The second gas delivery channels are arranged into a plurality of concentric annular areas, and the ratio of the tangential component to the axial component of the velocity of the rotating airflow gradually increases from the innermost annular area to the outermost annular area of ​​the concentric annular areas.

9. The gas injection mechanism according to claim 1, characterized in that: The velocity of the rotating airflow ejected from at least part of the rotating airflow channel further includes a radial component, wherein a ratio of the radial component to the axial component is ≤0.

5.

10. The gas injection mechanism according to claim 9, characterized in that: The second gas delivery channels are arranged into a plurality of concentric annular regions, so that the swirling airflow channels where the velocity of the ejected swirling airflow includes the radial component are located in the remaining annular regions outside the innermost annular region.

11. The gas injection mechanism according to claim 10, characterized in that: The radial component and the axial component of the velocity of the rotating airflow ejected from the remaining concentric annular areas except the innermost annular area are in the same ratio.

12. The gas injection mechanism according to claim 10, characterized in that: The ratio of the radial component to the axial component of the velocity of the rotating airflow ejected from the outermost annular region is not less than the ratio of the radial component to the axial component of the velocity of the rotating airflow ejected from the sub-inner annular region adjacent to the innermost annular region.

13. The gas injection mechanism according to claim 10, characterized in that: From the second inner annular region to the outermost annular region of the concentric annular regions, the ratio of the radial component to the axial component of the velocity of the swirling airflow gradually increases.

14. The gas injection mechanism according to claim 1, characterized in that: The gas phase reaction device comprises at least one isolating element, which separates the second gas injection mechanism into a plurality of mutually independent sub-regions, and the second gas transported in at least two of the sub-regions is independently regulated.

15. The gas injection mechanism according to claim 14, characterized in that: The multiple sub-regions are multiple concentric annular regions, the flow rate of the second gas introduced into the outermost sub-region is not less than the flow rate of the second gas introduced into the innermost sub-region, and / or the average molecular weight of the second gas introduced into the outermost sub-region is not less than the average molecular weight of the second gas introduced into the innermost sub-region.

16. The gas injection mechanism according to claim 14, characterized in that: The multiple sub-regions are multiple concentric annular regions, and the flow rate of the second gas introduced gradually increases from the innermost sub-region to the outermost sub-region, and / or the average molecular weight of the second gas introduced gradually increases.

17. A gas phase reaction device, characterized in that: include: a reaction chamber; A carrier plate is disposed in the reaction chamber, wherein the rotation speed of the carrier plate during the reaction is ≥ 200 RPM; A gas injection mechanism is arranged opposite to the carrier plate, and the gas injection mechanism is the gas injection mechanism according to any one of claims 1 to 16.

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