A grinding block and its preparation method and grinding method

Abstract

The present invention relates to the field of abrasives, and provides a grinding block, a preparation method thereof, and a grinding method. The grinding block comprises a base and a silicon carbide abrasive layer attached to the base; the roughness of the silicon carbide abrasive layer is 2μm-4.5μm; the roughness of the base is 1μm-3μm. The grinding block provided by the present invention is suitable for grinding SiC materials, has high grinding efficiency, and basically does not cause undesirable damage to the grinding part during the grinding process, such as large scratches, and does not introduce impurity elements.

Description

Technical Field

[0001] The invention relates to the field of abrasives, and in particular to a grinding block, a preparation method of the grinding block and a grinding method. Background Art

[0002] Currently, the most commonly used grinding blocks for grinding silicon carbide are diamond grinding blocks. Diamond grinding blocks have low purity and are prone to introduce impurities into the part to be polished during the grinding process, which reduces the purity of the part to be polished and fails to meet the grinding requirements of high-precision equipment.

[0003] Diamond grinding blocks have a good grinding effect due to their high hardness, but too high a hardness can easily cause the grinding block to leave grinding marks due to frictional contact during the grinding process of the part to be polished, causing damage to the part to be polished.

[0004] Diamond grinding blocks generate a lot of heat during the grinding process, which will affect the grinding accuracy and even damage the workpiece or the grinding block. Diamond grinding blocks are easily oxidized at high temperatures, which will also affect their grinding performance. Therefore, it is urgent to provide a grinding block with better grinding effect. Summary of the invention

[0005] The purpose of the present invention is to overcome the above problems existing in the prior art and provide a grinding block, a method for preparing the grinding block and a grinding method. The grinding block provided by the present invention comprises a base and a silicon carbide abrasive layer attached to the base, which is suitable for grinding SiC materials, has high grinding efficiency and basically does not cause undesirable damage to the grinding part during the grinding process, such as large scratches, and does not introduce impurity elements.

[0006] In order to achieve the above-mentioned object, the first aspect of the present invention provides a grinding block, the grinding block comprising a base and a silicon carbide abrasive grain layer attached to the base;

[0007] The roughness of the silicon carbide abrasive layer is 2 μm-4.5 μm;

[0008] The roughness of the base is 1 μm-3 μm.

[0009] Preferably, the base is provided with a first edge region and a first central region, and the roughness of the first edge region is greater than the roughness of the first central region.

[0010] A second aspect of the present invention provides a method for preparing the grinding block as described above, the method comprising depositing a silicon carbide abrasive layer on a base by chemical vapor deposition to obtain the grinding block.

[0011] A third aspect of the present invention provides a grinding method, comprising using the grinding block described in the first aspect to grind a portion to be grinded.

[0012] The present invention adopts the above technical solution to achieve the following beneficial effects:

[0013] The grinding block of the present invention is suitable for grinding SiC materials, so that the grinding block has higher grinding efficiency during the grinding process, and basically does not cause unexpected damage to the grinding part such as large scratches, etc., and can also avoid introducing impurities into the grinding part.

[0014] The endpoints and any values ​​of the range disclosed in this article are not limited to the precise range or value, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of each range, the endpoint values ​​of each range and the individual point values, and the individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed in this article. Herein, in the absence of special instructions, data ranges include endpoints. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 Shown is the SEM image of the silicon carbide abrasive layer. DETAILED DESCRIPTION

[0016] The specific embodiments of the present invention are described in detail below. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0017] Unless otherwise defined, all scientific and technical terms used in the present invention have the same meanings as commonly understood by one of ordinary skill in the art to which the present invention relates.

[0018] A first aspect of the present invention provides a grinding block, comprising a base and a silicon carbide abrasive layer attached to the base; the roughness of the silicon carbide abrasive layer is 2 μm-4.5 μm; the roughness of the base is 1 μm-3 μm.

[0019] The base can be in any shape, such as cylindrical, rectangular or cube.

[0020] In some embodiments, the hardness of the base is 8 GPA-30 GPA, for example, it can be 8 GPA, 10 GPA, 12 GPA, 15 GPA, 18 GPA, 20 GPA, 25 GPA, 27 GPA and 30 GPA.

[0021] In some embodiments, the hardness of the base is 14 GPA-26 GPA. When the hardness of the base is within the above range, the part to be polished will not be substantially damaged, such as a large degree of scratches, during the polishing process.

[0022] In some embodiments, the susceptor is a carbon-based susceptor or a silicon-based susceptor.

[0023] In some embodiments, the carbon-based susceptor is a graphite susceptor.

[0024] In some embodiments, the silicon-based susceptor is a pure silicon susceptor or a silicon-containing compound susceptor.

[0025] In some embodiments, the silicon-containing compound base includes at least one of silicon germanium (SiGe), silicon carbide (SiC), and silicon nitride (Si3N4).

[0026] In some specific embodiments, the susceptor is a graphite susceptor.

[0027] In the present invention, the roughness of the base is 1 μm-3 μm, for example, it can be 1 μm, 1.4 μm, 1.8 μm, 2 μm, 2.4 μm, 2.8 μm and 3 μm.

[0028] In the present invention, the roughness of the material is detected by a roughness detector, and the hardness is measured by a Vickers hardness tester.

[0029] In some embodiments, the base is provided with a first edge region and a first center region, and the roughness of the first edge region is greater than the roughness of the first center region. It should be noted that the edge region described in the present invention is relative to the center region, the center region is located at the center of the base, and the edge region is the other region of the base except the center region. The roughness of the first edge region is greater than the roughness of the first center region, which is conducive to making the silicon carbide grinding block have a better grinding effect on the part to be polished.

[0030] In some embodiments, the roughness of the first edge region is 2 μm-3 μm, for example, 2 μm, 2.2 μm, 2.4 μm, 2.6 μm, 2.8 μm and 3 μm.

[0031] In some embodiments, the roughness of the first central area is 1 μm-2.5 μm, for example, 1 μm, 1.2 μm, 1.4 μm, 1.6 μm, 1.8 μm, 2 μm, 2.2 μm, 2.4 μm and 2.5 μm.

[0032] In some embodiments, the area ratio of the first central region to the first edge region is (1-4):1, for example, it can be 1:1, 2:1, 3:1 and 4:1.

[0033] In some embodiments, the difference between the roughness of the first edge region and the roughness of the first central region is 0.5 μm-2 μm, for example, 0.5 μm, 0.8 μm, 1 μm, 1.2 μm, 1.4 μm, 1.6 μm, 1.8 μm and 2 μm.

[0034] In the present invention, the roughness of the silicon carbide abrasive layer is 2 μm-4.5 μm; for example, it can be 2 μm, 2.4 μm, 2.8 μm, 3 μm, 3.2 μm, 3.4 μm, 3.6 μm, 3.6 μm, 4 μm, 4.2 μm and 4.5 μm.

[0035] In some embodiments, the silicon carbide abrasive grain layer is provided with a second central region and a second edge region, and the roughness of the second edge region is greater than the roughness of the second central region. The second central region of the silicon carbide abrasive grain layer is the silicon carbide abrasive grain layer deposited on the first central region of the base, and the second edge region of the silicon carbide abrasive grain layer is the silicon carbide abrasive grain layer deposited on the first edge region of the base.

[0036] In some embodiments, the roughness of the second central region is 2.8 μm-3.5 μm, for example, 2.8 μm, 3 μm, 3.2 μm, 3.4 μm and 3.5 μm.

[0037] In some embodiments, the roughness of the second edge region is 3.5 μm-4.5 μm, for example, 3.5 μm, 3.8 μm, 4 μm, 4.2 μm, 4.4 μm and 4.5 μm.

[0038] In some embodiments, the difference between the roughness of the second edge region and the roughness of the second center region is 0.7 μm-1.7 μm, for example, 0.7 μm, 0.8 μm, 1 μm, 1.2 μm, 1.4 μm, 1.6 μm and 1.7 μm.

[0039] In some embodiments, the area ratio of the second central region to the second edge region is (1-4):1, for example, 1:1, 2:1, 3:1 and 4:1.

[0040] In some embodiments, the silicon carbide abrasive layer has a relatively high purity, which may be greater than 99.9995%, and the purity is tested by GDMS.

[0041] In some embodiments, the hardness of the silicon carbide abrasive layer is 25 GPA-38 GPA, for example, 25 GPA, 30 GPA, 32 GPA, 34 GPA, 36 GPA and 38 GPA.

[0042] In some embodiments, the hardness of the silicon carbide abrasive layer is 28 GPA-35 GPA.

[0043] In some embodiments, the density of the silicon carbide abrasive layer is 2.9 g / cm 3 -3.2g / cm 3 , for example, it can be 2.9 g / cm3 , 3g / cm 3 、3.1g / cm 3 、3.11g / cm 3 、3.12g / cm 3 、3.13g / cm 3 、3.14g / cm 3 、3.15g / cm 3 、3.16g / cm 3 、3.17g / cm 3 、3.18g / cm 3 、3.19g / cm 3 and 3.2g / cm 3 .

[0044] In the present invention, the density of the silicon carbide abrasive layer is tested by a drainage method.

[0045] In some embodiments, the thickness of the silicon carbide abrasive layer is 150 μm-200 μm, for example, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm and 200 μm.

[0046] In some embodiments, the porosity of the silicon carbide abrasive layer is 6%-8%, for example, 6%, 7% and 8%.

[0047] In the present invention, the porosity of the silicon carbide abrasive layer is tested by a water displacement method.

[0048] In some embodiments, the average particle size of the silicon carbide abrasive grains in the silicon carbide abrasive grain layer is 10 μm-50 μm, for example, 10 μm, 20 μm, 30 μm, 35 μm, 40 μm, 45 μm and 50 μm, preferably 30 μm-50 μm.

[0049] In the present invention, the average particle size of the silicon carbide abrasive grains in the silicon carbide abrasive grain layer is tested by SEM.

[0050] A second aspect of the present invention provides a method for preparing the above-mentioned grinding block, which comprises depositing a silicon carbide abrasive layer on a base by chemical vapor deposition to obtain the grinding block.

[0051] In some embodiments, the gas used in the deposition process includes a carbon silicon source gas and a reducing gas.

[0052] In some embodiments, the flow ratio of the carbon silicon source gas and the reducing gas is 1:(2-20), for example, it can be 1:2, 1:4, 1:5, 1:6, 1:8, 1:10, 1:14, 1:18 and 1:20, preferably 1:(4-10).

[0053] In some embodiments, the carbon silicon gas source includes carbosilane and / or chlorosilane having carbon atoms of C1-C4.

[0054] In some embodiments, the carbosilane includes at least one of monosilane, disilane, and trisilane.

[0055] In some embodiments, the chlorosilane includes at least one of methylchlorosilane, dimethylchlorosilane, and trichloromethylsilane.

[0056] In some specific embodiments, the carbon silicon gas source is trichloromethylsilane.

[0057] In some embodiments, the reducing gas includes hydrogen.

[0058] In some embodiments, the type of the dilution gas is not particularly limited and may be various inert gases, such as argon, helium, and neon.

[0059] In some embodiments, the volume fraction of the dilution gas is 15%-50%, where the volume fraction of the dilution gas is the percentage of the volume of the dilution gas to the volume of the total participating gas.

[0060] In some embodiments, the deposition process parameters include: a deposition temperature of 1150°C-1400°C, for example, it can be 1150°C, 1200°C, 1250°C, 1300°C, 1350°C and 1400°C, and is preferably 1200°C-1300°C; a deposition pressure of 6kPaPa-18kPaPa, for example, it can be 6kPa, 8kPa, 10kPa, 12kPa, 14kPa, 16kPa and 18kPa, and is preferably 9kPa-12kPa; a deposition time of 4h-12h, for example, it can be 4h, 5h, 6h, 7h, 8h, 9h, 10h, 11h and 12h, and is preferably 5h-8h.

[0061] A third aspect of the present invention provides a grinding method, comprising using the grinding block of the first aspect to grind a portion to be grinded.

[0062] In some embodiments, the surface of the grinding block can be any shape, for example, it can be round, square, and rectangular. During use, a round grinding block can be used for grinding first, and the corners of the grinding part can be ground with a square or rectangular grinding block.

[0063] In some embodiments, the hardness of the silicon carbide abrasive layer is 1-1.25 times the hardness of the portion to be polished, for example, 1 times, 1.05 times, 1.1 times, 1.2 times and 1.25 times, preferably 1-1.2 times.

[0064] In some embodiments, the roughness of the silicon carbide abrasive layer is 1-2 times the roughness of the part to be polished, for example, it can be 1 times, 1.1 times, 1.2 times, 1.3 times, 1.5 times, 1.6 times, 1.8 times and 2 times, preferably 1.2-1.8 times.

[0065] In some embodiments, the material of the portion to be polished is silicon carbide, and the polishing block will basically not cause undesirable damage such as large scratches to the portion to be polished during the polishing process.

[0066] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0067] Unless otherwise specified, the materials and reagents used in the following examples can be obtained from commercial sources.

[0068] The present invention is described in detail below in conjunction with specific embodiments, which are used to understand but not to limit the present invention.

[0069] The grinding blocks of the following examples and comparative examples were prepared according to the following method.

[0070] Example 1

[0071] This example is used to illustrate the preparation of the grinding block of the present invention.

[0072] (1) A graphite substrate with a roughness of 2.978 μm and a hardness of 20 GPA was placed in a chemical vapor deposition device, evacuated, heated to 1250°C, and kept warm for 10 min.

[0073] (2) CH3SiCl3 gas and H2 are introduced into the chemical vapor deposition equipment with dilution gas Ar, wherein the flow ratio of CH3SiCl3 gas to H2 is 1:4, the flow rate of dilution gas Ar is 20% of the mixed gas, the temperature is maintained at 1250°C, the pressure is set to 10 kPa, and the deposition time is 480 min. After the chemical vapor deposition is completed, the introduction of CH3SiCl3, H2 and Ar is stopped, and the mixture is cooled to room temperature to obtain a grinding block containing a silicon carbide abrasive layer.

[0074] Figure 1 Shown is the SEM image of the silicon carbide abrasive layer.

[0075] Example 2

[0076] This embodiment is used to illustrate the different roughness levels of the graphite base.

[0077] Example 2-1

[0078] The operation was carried out according to the method described in Example 1, except that the roughness of the graphite base was 2.323 μm.

[0079] Example 2-2

[0080] The operation was carried out according to the method described in Example 1, except that the roughness of the graphite base was 1.097 μm.

[0081] Example 3

[0082] This embodiment is used to illustrate the different hardness levels of the graphite base.

[0083] Example 3-1

[0084] The operation was performed according to the method described in Example 1, except that the hardness of the graphite base was 16 GPA.

[0085] Example 3-2

[0086] The operation was carried out according to the method described in Example 1, except that the hardness of the graphite base was 9 GPA.

[0087] Example 3-3

[0088] The method described in Example 1 was followed, except that the hardness of the graphite base was 27 GPA.

[0089] Example 4

[0090] This embodiment is used to illustrate that when a graphite base is divided into a central area and an edge area, the roughness of the central area of ​​the graphite base is different from the roughness of the edge area, and the central area and the edge area have different sizes.

[0091] Example 4-1

[0092] The operation was performed according to the method described in Example 1, except that the graphite base was divided into a central area and an edge area, the area ratio of the first central area to the first edge area of ​​the graphite base was 3:1, the roughness of the central area was 2.054 μm, and the roughness of the edge area was 2.951 μm. The shape of the central area was substantially consistent with the overall shape of the grinding block.

[0093] Example 4-2

[0094] The operation was carried out according to the method described in Example 4-1, except that the roughness of the central area was 1.058 μm and the roughness of the edge area was 2.125 μm.

[0095] Example 4-3

[0096] The operation was performed according to the method described in Example 4-1, except that the area ratio of the first central region and the first edge region of the graphite base was 1:1.

[0097] Example 5

[0098] This example is used to illustrate the effect of deposition temperature on the polishing block.

[0099] Example 5-1

[0100] The method described in Example 1 was followed, except that the deposition temperature was 1285°C.

[0101] Example 5-2

[0102] The method described in Example 1 was followed, except that the deposition temperature was 1180°C.

[0103] Example 5-3

[0104] The method described in Example 1 was followed, except that the deposition temperature was 1395°C.

[0105] Example 6

[0106] This embodiment is used to illustrate the effect of deposition pressure on the grinding block.

[0107] Example 6-1

[0108] The operation was carried out in accordance with the method described in Example 1, except that the deposition pressure was 11.5 kPa.

[0109] Example 6-2

[0110] The operation was carried out in accordance with the method described in Example 1, except that the deposition pressure was 6.5 kPa.

[0111] Example 6-3

[0112] The operation was carried out in accordance with the method described in Example 1, except that the deposition pressure was 15 kPa.

[0113] Example 7

[0114] This embodiment is used to illustrate the influence of the flow ratio of the carbon silicon gas source and the reducing gas on the polishing block.

[0115] Example 7-1

[0116] The operation is carried out according to the method described in Example 1, except that the flow ratio of the CH3SiCl3 gas and H2 is 1:8.

[0117] Example 7-2

[0118] The operation is carried out according to the method described in Example 1, except that the flow ratio of the CH3SiCl3 gas and H2 is 1:2.

[0119] Example 7-3

[0120] The operation was carried out in accordance with the method described in Example 1, except that the flow ratio of the CH3SiCl3 gas and H2 was 1:16.

[0121] Example 8

[0122] This example is used to illustrate the effect of deposition time on the grinding block.

[0123] The method described in Example 1 was followed, except that the deposition time was 600 min.

[0124] Comparative Example 1

[0125] This comparative example is used to illustrate a grinding block that is not suitable for the roughness of a graphite base.

[0126] The operation was carried out according to the method described in Example 1, except that the roughness of the graphite base was 0.511 μm.

[0127] Comparative Example 2

[0128] This comparative example is used to illustrate that when the deposition conditions are not suitable, the prepared grinding block is not suitable for the roughness of the silicon carbide abrasive layer.

[0129] The method described in Example 1 was followed, except that the deposition temperature was 1420° C., the deposition pressure was 5050 Pa, the flow ratio of the carbon silicon gas source and the reducing gas was 1:20, the deposition time was 1080 min, and the roughness of the obtained silicon carbide abrasive layer was 1.139 μm.

[0130] Test Case

[0131] (1) The roughness, hardness, thickness and average particle size of the silicon carbide abrasive layer in the grinding blocks prepared in the examples and preparation examples were tested. The results are shown in Table 1.

[0132] The roughness is tested by a handheld roughness tester; the hardness is tested by a Vickers hardness tester; the thickness is tested by X-ray reflection method, and the average particle size is tested by SEM.

[0133] (2) Grinding time

[0134] Take the silicon carbide part to be polished with a diameter of 300 mm and an average height of 1 mm (specifically the average height of the grains protruding from the same smooth surface) deposited under the same deposition conditions, grind it to 0.3 mm, record the grinding time, and the results are shown in Table 1.

[0135] Table 1

[0136]

[0137] The silicon carbide grinding block of the present invention has a good grinding effect, can grind a target grinding part of a certain height to a predetermined height in a short time, and has a high grinding efficiency. At the same time, compared with the comparative example, the grinding block in the above embodiment basically does not cause unexpected damage to the grinding part during the grinding process, such as large scratches.

[0138] It should be noted that, in this article, the terms "comprise", "include" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved, for example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0139] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A grinding block, characterized in that: It includes a base and a silicon carbide abrasive layer attached to the base; the roughness of the silicon carbide abrasive layer is 2μm-4.5μm; the roughness of the base is 1μm-3μm, the base is a silicon carbide base, the hardness of the base is 14GPA-26GPA, the average particle size of silicon carbide abrasives in the silicon carbide abrasive layer is 30μm-50μm, the thickness of the silicon carbide abrasive layer is 150μm-200μm, and the grinding block is used for grinding silicon carbide.

2. The grinding block according to claim 1, characterized in that: The hardness of the silicon carbide abrasive layer is 25GPA-38GPA, and / or, The density of the silicon carbide abrasive layer is 2.9 g / cm 3 -3.2g / cm 3 and / or, The porosity of the silicon carbide abrasive layer is 6%-8%.

3. The grinding block according to claim 1, characterized in that: The base is provided with a first edge region and a first central region, and the roughness of the first edge region is greater than the roughness of the first central region, and the area ratio of the first central region to the first edge region is (1-4):1, and / or, The silicon carbide abrasive layer is provided with a second central region and a second edge region, and the roughness of the second edge region is greater than the roughness of the second central region, and the area ratio of the second central region to the second edge region is (1-4):

1.

4. The grinding block according to claim 3, characterized in that: The roughness of the first edge region is 2 μm-3 μm; and / or, the roughness of the first central region is 1 μm-2.5 μm; and / or, The roughness of the second central area is 2.8 μm-3.5 μm; and / or, The roughness of the second edge region is 3.5 μm-4.5 μm.

5. A method for preparing the grinding block according to any one of claims 1 to 4, characterized in that: The method comprises depositing a silicon carbide abrasive grain layer on a base by chemical vapor deposition to obtain the grinding block; The gas used in the deposition process includes a carbon silicon gas source and a reducing gas; the flow ratio of the carbon silicon gas source to the reducing gas is 1:(2-20); The carbon silicon gas source includes carbosilane and / or chlorosilane with carbon atoms of C1-C4; and / or the reducing gas includes hydrogen.

6. The method according to claim 5, characterized in that The deposition process parameters include: deposition temperature of 1150°C-1400°C, deposition pressure of 6kPa-18kPa, and deposition time of 4h-12h.

7. A grinding method, characterized in that: The method comprises using the grinding block described in any one of claims 1 to 4 to grind the portion to be grinded.

8. The grinding method according to claim 7, characterized in that: The hardness of the silicon carbide abrasive layer is 1-1.25 times the hardness of the part to be polished, and the roughness of the silicon carbide abrasive layer is 1.2-1.8 times the roughness of the part to be polished.

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