A wafer cleaning support device

Abstract

The present invention provides a supporting device for wafer cleaning, which comprises: a limiting component with a hollow cavity, a heating component arranged in the hollow cavity, and a gas supply pipe; the limiting component comprises: a driving disk, a fixing ring arranged above the driving disk, and a positioning sheath protruding longitudinally from the top of the fixing ring to limit the wafer, the driving disk and the fixing ring enclose a hollow cavity, the gas supply pipe is arranged at the bottom of the driving disk and longitudinally penetrates the driving disk to transport gas into the hollow cavity, an annular gas gap is formed between the heating component and the fixing ring for gas to blow toward the edge of the bottom surface of the wafer, and a gap is formed between the heating component and the gas supply pipe for gas transported by the gas supply pipe to flow toward the annular gas gap. Through the present invention, the backflow of the cleaning liquid from the edge of the wafer is prevented, and the mechanical parts inside the device are protected.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor cleaning, and in particular to a supporting device for wafer cleaning. Background Art

[0002] Wafer cleaning is an important process step in the semiconductor manufacturing process, which aims to remove pollutants generated by the contact of the wafer with various organic substances, particles and metals during the processing, forming and polishing process, including dust, metal ions, organic residues, etc. During the cleaning process, the wafer needs to be placed on a supporting device, and the wafer is fixed by the process chuck contained in the supporting device and is in a high-speed rotating state. The cleaning liquid is sprayed on the surface of the high-speed rotating wafer to clean and dissolve the pollutants on the surface of the wafer. Under the action of centrifugal force, the cleaning liquid and the pollutants are thrown out from the surface of the wafer together, thereby achieving the purpose of cleaning the wafer. However, some specific cleaning liquids need to be kept at a certain temperature to play an excellent cleaning role. In order to ensure the quality of wafer cleaning, the existing supporting device uses a heating element (for example, a heating tube) to heat the wafer while cleaning the wafer. Due to the limitations of the design of the heating element, the heating element will produce a temperature difference between the edge and the center of the wafer, resulting in uneven heating. In addition, when the temperature is high, the parts and heating elements contained in the supporting device may be scrapped due to the high temperature, thereby affecting the stability of the operation of the supporting device. In addition, during the wafer cleaning process, cleaning liquid is transported from the top of the wafer to flow on the surface of the wafer and is thrown out from the edge of the wafer. However, due to insufficient throwing force or excessive cleaning liquid, some cleaning liquid will flow from the edge of the wafer to the back of the wafer and cause backflow, thereby causing the cleaning liquid to contaminate the mechanical parts contained in the supporting device and cause damage to the mechanical parts.

[0003] In view of this, it is necessary to improve the wafer supporting device in the prior art to solve the above problems. Summary of the invention

[0004] The purpose of the present invention is to solve the problem that the heating element in the existing wafer supporting device heats the wafer while cleaning the wafer, but due to the limitations of the design of the heating element, the heating element heats the wafer unevenly, and under high temperature conditions, the heating element and other parts contained in the supporting device will be scrapped due to the high temperature. In addition, during the wafer cleaning process, some cleaning liquid will flow from the edge of the wafer to the back of the wafer, thereby causing backflow and damage to mechanical parts.

[0005] To achieve the above object, the present invention provides a wafer cleaning support device, comprising:

[0006] A limiting component having a hollow cavity, a heating component arranged in the hollow cavity, and an air supply pipe;

[0007] The limiting assembly includes: a driving disk, a fixing ring arranged above the driving disk, and a positioning sheath protruding longitudinally from the top of the fixing ring to limit the wafer, the driving disk and the fixing ring form a hollow cavity, the gas supply pipe is arranged at the bottom of the driving disk and longitudinally penetrates the driving disk to transport gas into the hollow cavity, an annular air gap is formed between the heating assembly and the fixing ring for gas to be blown toward the edge of the bottom surface of the wafer, and a gap is formed between the heating assembly and the gas supply pipe for the gas transported by the gas supply pipe to flow toward the annular air gap.

[0008] As a further improvement of the present invention, the heating assembly includes: a heating plate, a cooling plate and a control plate arranged in sequence from top to bottom longitudinally, a plurality of heating units are evenly arranged on the upper surface of the heating plate, and the annular air gap is formed between the heating plate, the cooling plate, the control plate and the fixing ring.

[0009] As a further improvement of the present invention, the limiting assembly also includes: a protective plate arranged on the top of the heating plate and longitudinally exposing the annular air gap, the wafer is limited above the protective plate by the positioning sheath, and the wafer is separated from the protective plate by a certain distance.

[0010] As a further improvement of the present invention, the cooling plate is provided with a plurality of first holes in a circumferential direction, and the heating plate is provided with second holes longitudinally aligned with the first holes.

[0011] As a further improvement of the present invention, the limiting assembly also includes: a turntable embedded in the driving disk facing the side of the fixed ring and a first driving member for driving the turntable to rotate axially, the positioning sheath is configured as at least three and circumferentially arranged at the edge of the turntable and longitudinally penetrates the fixed ring, a first gear is formed at the edge of the turntable, a second gear meshing with the first gear is formed at the bottom of the positioning sheath, a positioning plate for longitudinally limiting the wafer and a positioning column for laterally limiting the wafer are formed at the top of the positioning sheath, the turntable is driven by the first driving member to rotate axially and the positioning sheath is driven to rotate axially to adjust the size of the lateral space formed between the positioning columns, so that the positioning sheath can be switched between a wafer clamped state and an un-wafer clamped state.

[0012] As a further improvement of the present invention, a protrusion with an arc surface is provided at the bottom of the turntable and passes through the driving disk. The driving disk has a strip-shaped slot for the protrusion to move. The first driving member is provided at the bottom of the protrusion and extends longitudinally upward to form a driving shaft. A top block with a sloped surface is provided at the top of the driving shaft. The top block is driven by the first driving member to move longitudinally upward. The slope slides along the surface contour of the arc surface and pushes the turntable to rotate axially, thereby driving the positioning sheath to rotate axially and move from a wafer clamping state to an un-wafer clamping state.

[0013] As a further improvement of the present invention, at least one reset member is arranged between the driving disk and the rotating disk, a column extending into the rotating disk is convexly arranged on the surface of the driving disk facing the rotating disk, a hooking portion is formed on the inner side of the rotating disk, and two ends of the reset member are respectively connected to the column and the hooking portion;

[0014] When the first driving member stops driving the turntable to rotate axially, the resetting member drives the positioning sheath to return to a wafer clamping state.

[0015] As a further improvement of the present invention, a limiting hole for accommodating the positioning sheath is provided on the inner side of the driving disk, and a connecting portion with a through hole is formed by protruding downwards of the driving disk, and the air supply pipe passes through the driving disk from the through hole;

[0016] The limiting assembly also includes: a second driving member arranged at the bottom of the driving disk, the second driving member forming a hollow shaft connected to the driving disk, and when the positioning sheath is in a wafer clamping state, the second driving member drives the hollow shaft to rotate axially to drive the driving disk to rotate axially, and simultaneously drives the turntable, the positioning sheath and the fixed ring to rotate synchronously.

[0017] As a further improvement of the present invention, the hollow shaft sleeve is arranged on the outside of the air supply pipe, and the first driving member is arranged on the peripheral side of the second driving member, and the limiting assembly also includes: a baffle plate arranged between the turntable and the control plate, the control plate has a small hole for connecting the supply line, and the cooling plate and the heating plate respectively start to longitudinally expose the first mounting hole and the second mounting hole of the small hole.

[0018] As a further improvement of the present invention, the gas transported by the gas supply pipe is hot gas, and is nitrogen.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] A heating component is arranged in the hollow cavity formed by the limiting component, and a gas supply pipe is arranged at the bottom of the driving disk included in the limiting component to longitudinally penetrate the driving disk to transport gas into the hollow cavity. An annular air gap is formed between the heating component and the fixing ring included in the limiting component, and a gap is formed between the heating component and the gas supply pipe for the gas transported by the gas supply pipe to flow to the annular air gap. During the wafer cleaning process, the gas transported by the gas supply pipe flows from the gap to the annular air gap, and blows from the annular air gap to the edge of the bottom surface of the wafer, quickly blowing the cleaning liquid at the edge of the wafer away from the wafer, preventing some cleaning liquid from flowing from the edge of the wafer to the back of the wafer, thereby causing backflow and causing damage to mechanical parts. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A three-dimensional diagram of a wafer cleaning support device shown in the present invention at a viewing angle;

[0022] Figure 2 A three-dimensional image of a wafer placed on a wafer cleaning support device at a certain viewing angle;

[0023] Figure 3 for Figure 1 The wafer cleaning support device shown omits a three-dimensional view of the heating assembly and the protection plate at one viewing angle;

[0024] Figure 4 for Figure 1 The wafer cleaning support device shown is a three-dimensional view in which the fixing ring is omitted from one viewing angle;

[0025] Figure 5 for Figure 2 A cross-sectional view of a wafer shown being placed on a wafer cleaning support device;

[0026] Figure 6 A three-dimensional diagram of a heating component at a viewing angle;

[0027] Figure 7 A partial three-dimensional diagram of a wafer cleaning support device at a viewing angle;

[0028] Figure 8 A partial three-dimensional diagram of a wafer cleaning support device at another viewing angle;

[0029] Fig. 9 A stereoscopic diagram of the turntable and the positioning sheath at a certain viewing angle;

[0030] Fig.10 A three-dimensional diagram of a drive disk at one viewing angle;

[0031] Fig.11 is a three-dimensional diagram of the drive disk from another viewing angle;

[0032] Fig.12 It is a stereoscopic diagram of the second driving member and the hollow shaft from a certain viewing angle. DETAILED DESCRIPTION

[0033] The present invention is described in detail below in conjunction with the various embodiments shown in the accompanying drawings, but it should be noted that these embodiments are not limitations of the present invention, and any equivalent transformations or substitutions in functions, methods, or structures made by ordinary technicians in the field based on these embodiments are all within the scope of protection of the present invention.

[0034] It is particularly important to note that in the present invention, "horizontally" refers to Figure 2 The direction along the X-axis shown in the figure is the longitudinal direction. Figure 2 The direction along the Y axis is shown in .

[0035] Ginseng Figures 1 to 12 As shown, the present invention shows a specific embodiment of a wafer cleaning supporting device (hereinafter referred to as "device 100"), which is used to clean the wafer 10 to remove impurities (including dust, metal ions, organic residues, etc.) on the surface of the wafer 10. During the cleaning process, the heating plate 31 included in the heating component 30 is used to heat the wafer 10, thereby achieving the purpose of heating the cleaning liquid, so that the cleaning liquid on the surface cleans the wafer 10 at a specific temperature to ensure the cleaning effect, and during the cleaning process, gas is transported through the gas supply pipe 40 and blown to the edge of the bottom surface of the wafer 10, so that the cleaning liquid at the edge of the wafer 10 is quickly blown away from the wafer 10, so as to prevent some cleaning liquid from flowing from the edge of the wafer 10 to the back of the wafer 10, thereby causing backflow and causing damage to mechanical parts.

[0036] Specifically, refer to Figures 1 to 5As shown, the device 100 includes: a limiting assembly 20 with a hollow cavity A, a heating assembly 30 disposed in the hollow cavity A, and a gas supply pipe 40. The limiting assembly 20 includes: a driving disk 21, a fixing ring 22 disposed above the driving disk 21, and a positioning sheath 23 protruding longitudinally from the top of the fixing ring 22 to limit the wafer 10. The driving disk 21 and the fixing ring 22 enclose a hollow cavity A, and the gas supply pipe 40 is disposed at the bottom of the driving disk 21 and longitudinally penetrates the driving disk 21 to transport gas into the hollow cavity A. An annular air gap A1 is formed between the heating assembly 30 and the fixing ring 22 for blowing gas toward the bottom edge of the wafer 10, and a gap A2 is formed between the heating assembly 30 and the gas supply pipe 40 for the gas transported by the gas supply pipe 40 to flow toward the annular air gap A1. When cleaning the wafer 10, the wafer 10 is placed on the top of the fixing ring 22 and clamped by the positioning sheath 23 to simultaneously limit the lateral position and longitudinal position of the wafer 10. The heating component 30 is arranged in the hollow cavity A formed by the driving disk 21 and the fixing ring 22, that is, the heating component 30 is arranged at the bottom of the wafer 10. Based on this, the wafer 10 is heated by the heating component 30, and at the same time, the cleaning liquid is sprayed from the top of the wafer 10 to the surface of the wafer 10, thereby achieving the purpose of heating the cleaning liquid, so that the cleaning liquid cleans the wafer 10 at a specific temperature to ensure the cleaning effect of the wafer 10. During the cleaning process, gas is transported to the hollow cavity A through the gas supply pipe 40 disposed at the bottom of the drive disk 21 and penetrating the drive disk 21. The gas flows horizontally along the gap A2 in the hollow cavity A and flows to the annular air gap A1, and flows vertically upward from the annular air gap A1 and blows to the bottom edge of the wafer 10, so as to quickly blow the cleaning liquid at the edge of the wafer 10 away from the wafer 10, and prevent some cleaning liquid from flowing from the edge of the wafer 10 to the back of the wafer 10, thereby causing backflow and causing damage to mechanical parts. In addition, the gas blown out of the gas supply pipe 40 is hot gas, and is nitrogen, so that the edge of the wafer 10 can be heated again by hot gas to reduce the temperature difference between the edge and the center of the wafer 10, and ensure the uniformity of heating of the wafer 10. In the present invention, the gas is preferably hot nitrogen.

[0037] In one embodiment, Figure 6As shown, the heating assembly 30 includes: a heating plate 31, a cooling plate 32 and a control plate 33 which are arranged in sequence from top to bottom longitudinally, a plurality of heating units 311 are evenly arranged on the upper surface of the heating plate 31, and an annular air gap A1 is formed between the heating plate 31, the cooling plate 32, the control plate 33 and the fixing ring 22, that is, the annular air gap A1 is formed between the whole formed by the heating plate 31, the cooling plate 32 and the control plate 33 and the fixing ring 22. The control disk 33 controls the heating disk 31 to perform a heating operation, and specifically the heating unit 311 arranged on the surface of the heating disk 31 radiates heat to heat the wafer 10, and a cooling disk 32 is arranged between the heating disk 31 and the control disk 33, and the control disk 33 controls the cooling disk 32 to perform a cooling operation, and specifically the heating disk 31 and the control disk 33 are cooled simultaneously by the cooling disk 32, thereby reducing the temperatures of the heating disk 31 and the control disk 33 at the same time, thereby solving the problem in the prior art that when the temperature of the wafer support device is high, the heating element and other parts contained in the support device will be scrapped due to the high temperature.

[0038] It should be noted that, in the present invention, the heating unit 311 may be, for example, an LED heating lamp or other components, the cooling plate 32 may be, for example, a water cooling tube or a refrigeration tube, etc., and the control plate 33 is provided with a control component for controlling the brightness and lighting time of the LED heating lamp. At the same time, the control plate 33 is provided with a small hole 331 for connecting the supply line, and the cooling plate 32 and the heating plate 31 are respectively provided with a first mounting hole 322 and a second mounting hole 313 for longitudinally exposing the small hole 331, thereby allowing the wiring to be carried out through the small hole 331, the first mounting hole 322 and the second mounting hole 313, and the gas transported by the gas supply pipe 40 can also flow in the hollow cavity A through the small hole 331, the first mounting hole 322 and the second mounting hole 313, and flow horizontally and flow to the annular air gap A1 under the obstruction of the protective plate 24, and flow longitudinally upward from the annular air gap A1 and blow to the bottom edge of the wafer 10.

[0039] Ginseng Figure 4 and Figure 5As shown, the limiting assembly 20 also includes: a protective plate 24 disposed on the top of the heating plate 31 and longitudinally exposing the annular air gap A1, the wafer 10 is limited above the protective plate 24 by the positioning sheath 23, and the wafer 10 is separated from the protective plate 24 by a certain distance. The protective plate 24 is disposed on the top of the heating plate 31 to prevent the cleaning liquid from splashing and flowing into the heating plate 31 to cause damage to its internal parts, so as to protect the heating assembly 20 and especially the heating plate 31, and the protective plate 24 longitudinally exposes the annular air gap A1, which can also be understood as the annular air gap A1 formed between the whole formed by the protective plate 24, the heating plate 31, the cooling plate 32, and the control plate 33 and the fixing ring 22, to prevent the protective plate 24 from blocking the gas from blowing from the annular air gap A1 to the bottom edge of the wafer 10, and to ensure that the gas can be completely blown to the bottom edge of the wafer 10. At the same time, when the wafer 10 is assembled in the device 100 (i.e., when it is restricted by the positioning sheath 23), the wafer 10 is separated from the protective plate 24 by a certain distance, thereby providing a subsequent flow space for the gas to be blown to the edge of the bottom surface of the wafer 10, and making the gas more convergent to ensure the liquid blowing effect of the gas, and also prevent the pollution problem caused by the contact between the protective plate 24 and the bottom surface of the wafer 10, and when the gas is hot gas, it can ensure the heating effect of the hot gas on the edge of the wafer 10. Preferably, the distance between the wafer 10 and the protective plate 24 is 15-30 mm, and the distance between the wafer 10 and the heating plate 31 is 30 mm.

[0040] In the present application, preferably, gaps (not marked) are formed between the protection plate 24, the heating plate 31, the cooling plate 32 and the control plate 33, thereby facilitating the gas transported by the gas supply pipe 40 to flow horizontally inside the hollow cavity A and flow toward the annular air gap A1, and then flow vertically upward from the annular air gap A1 and blow toward the bottom edge of the wafer 10.

[0041] Ginseng Figure 6 As shown, the cooling plate 32 is provided with a plurality of first holes 321 in the axial direction, and the heating plate 31 is provided with second holes 312 longitudinally aligned with the first holes 321, thereby ensuring the cooling efficiency of the cooling plate 32 on both the heating plate 31 and the control plate 33. Since the heating unit 311 provided on the heating plate 31 is provided on the upper surface of the heating plate 31, and the cooling plate 32 is provided below the heating plate 31, when the heating plate 31 is cooled by the cooling plate 32, the heat emitted by the heating unit 311 is taken away from the second holes 312 by the cooling plate 32, so as to cool the heating plate 31; similarly, the heat emitted by the control plate 33 is taken away from the first holes 321 by the cooling plate 32, so as to cool the control plate 33.

[0042] Ginseng Figures 7 to 9As shown, the limiting assembly 20 also includes: a turntable 25 embedded in the driving disk 21 toward the side of the fixed ring 22 and a first driving member 26 for driving the turntable 25 to rotate axially, the positioning sheath 23 is configured as at least three and circumferentially arranged at the edge of the turntable 25 and longitudinally penetrates the fixed ring 22, a first gear 251 is formed at the edge of the turntable 25, a second gear 231 meshing with the first gear 251 is formed at the bottom of the positioning sheath 23, a positioning plate 232 for longitudinally limiting the wafer 10 and a positioning column 233 for transversely limiting the wafer 10 are formed at the top of the positioning sheath 23, the first driving member 26 drives the turntable 25 to rotate axially and drives the positioning sheath 23 to rotate axially to adjust the size of the transverse space formed between the positioning columns 233, so that the positioning pin 23 can be switched between a state of clamping the wafer 10 and a state of not clamping the wafer 10.

[0043] Specifically, the positioning plate 232 and the positioning column 233 are both formed at the top of the positioning sheath 23, and the positioning column 233 is formed on the side of the positioning plate 232. The positioning sheath 23 is configured to be at least three and circumferentially arranged at the edge of the turntable 25. At the same time, the positioning sheath 23 longitudinally penetrates the fixing ring 22, and the wafer 10 is placed on the positioning plates 232 formed by at least three positioning sheaths 23, respectively, to prevent the wafer 10 from falling under the influence of its own gravity, thereby realizing the longitudinal restriction of the wafer 10, and the positioning column 233 formed on the side of the positioning plate 232 jointly clamps the wafer 10, thereby realizing the lateral restriction of the wafer 10, thereby achieving the purpose of limiting the wafer 10 above the limit assembly 20. The first gear 251 formed at the edge of the turntable 25 and the second gear 231 formed at the bottom of the positioning sheath 23 are meshed with each other, and the turntable 25 is driven by the first driving member 26 to rotate axially and form a first central axis B1, and the turntable 25 drives the positioning sheath 23 to rotate axially and form a second central axis B2.

[0044] Since at least three positioning sheaths 23 are configured, and each positioning sheath 23 forms an independent corresponding second central axis B2, and the movement process of each positioning sheath 23 is similar, in the following description, only the movement process of a single positioning sheath 23 is specifically shown for exemplary description. When the first driving member 26 drives the turntable 25 to rotate around the first center axis B1 along the direction C1, the first gear 251 and the second gear 231 engage with each other to drive the positioning sheath 23 to rotate along the direction D2, so that the lateral space formed between the positioning columns 233 formed at the top of at least three positioning sheaths 23 becomes larger, until the side of the positioning column 233 is no longer in contact with the wafer 10, prompting the positioning sheath 23 to move to a state where the wafer 10 is not clamped; when the first driving member 26 drives the turntable 25 to rotate around the first center axis B1 along the direction C2, the first gear 251 and the second gear 231 engage with each other to drive the positioning sheath 23 to rotate along the direction D1, so that the lateral space formed between the positioning columns 233 formed at the top of at least three positioning sheaths 23 becomes smaller, until the side of the positioning column 233 is in contact with the wafer 10, prompting the positioning sheath 23 to move to a state where the wafer 10 is clamped. On the contrary, the first driving member 26 can also drive the turntable 25 to rotate around the first central axis B1 along the direction C2, and the first gear 251 and the second gear 231 are engaged with each other to drive the positioning sheath 23 to rotate along the direction D1, so that the lateral space formed between the positioning columns 233 formed at the top of at least three positioning sheaths 23 becomes larger, until the side of the positioning column 233 is not in contact with the wafer 10, prompting the positioning sheath 23 to move to a state where the wafer 10 is not clamped; the first driving member 26 drives the turntable 25 to rotate around the first central axis B1 along the direction C1, and the first gear 251 and the second gear 231 are engaged with each other to drive the positioning sheath 23 to rotate along the direction D2, so that the lateral space formed between the positioning columns 233 formed at the top of at least three positioning sheaths 23 becomes smaller, until the side of the positioning column 233 is in contact with the wafer 10, prompting the positioning sheath 23 to move to a state where the wafer 10 is clamped. This embodiment does not make any specific limitation to this, but it should be noted that no matter the positioning sheath 23 is in a state of clamping the wafer 10 or in a state of not clamping the wafer 10, or in a switching process of moving from a state of clamping the wafer 10 to a state of not clamping the wafer 10, the positioning column 233 is located on the outside of the wafer 10.

[0045] In the following description, the first driving member 26 drives the turntable 25 to rotate along the direction C1 around the first central axis B1, and drives the positioning sheath 23 to rotate along the direction D2, so that the positioning sheath 23 moves from the state of clamping the wafer 10 to the state of not clamping the wafer 10; and the first driving member 26 drives the turntable 25 to rotate along the direction C2 around the first central axis B1, and drives the positioning sheath 23 to rotate along the direction D1, so that the positioning sheath 23 moves from the state of not clamping the wafer 10 to the state of clamping the wafer 10.

[0046] In one embodiment, Figure 7 and Fig.10 As shown, a protrusion 252 with an arc surface 253 penetrating through the driving disk 21 is provided at the bottom of the turntable 25, and a strip-shaped slot 211 is provided on the driving disk 21 for the protrusion 252 to move. A first driving member 26 is provided at the bottom of the protrusion 252 and extends longitudinally upward to form a driving shaft 261, and a top block 262 with a slope surface 263 is provided on the top of the driving shaft 261. The top block 262 is driven by the first driving member 26 to move longitudinally upward, and the slope surface 263 slides along the surface contour of the arc surface 253 and pushes the turntable 25 to rotate axially, thereby driving the positioning sheath 23 to move from a state of clamping the wafer 10 to a state of not clamping the wafer 10. There is a certain deviation between the protrusion 252 and the top block 262 in the longitudinal direction and they are partially aligned, that is, when the first driving member 26 drives the top block 262 to move longitudinally upward, the slope 263 formed by the top block 262 first contacts the arc surface 253 formed by the protrusion 252. At this time, the top block 262 cannot continue to move longitudinally upward due to the contact between the top block 262 and the protrusion 252. Therefore, in order to provide space for the top block 262 to continue to move longitudinally upward, the slope 263 slides along the surface contour of the arc surface 253, thereby driving the protrusion 252 to rotate axially in the strip gap 211 and around the first central axis B1, thereby achieving the purpose of pushing the turntable 25 to rotate axially around the first central axis B1. For example, the first driving member 26 drives the driving shaft 261 to extend longitudinally upward, driving the top block 262 to move longitudinally upward, driving the top block 262 to move longitudinally upward, and the slope 263 slides along the surface contour of the arc surface 253, driving the protrusion 252 to rotate axially in the strip gap 211 and around the first center axis B1, pushing the turntable 25 to rotate around the first center axis B1 along the direction C1, and the first gear 251 and the second gear 231 engage with each other to drive the positioning sheath 23 to rotate along the direction D2, so that the lateral space formed between the positioning columns 233 formed at the top of at least three positioning sheaths 23 becomes larger, until the side of the positioning column 233 is no longer in contact with the wafer 10, prompting the positioning sheath 23 to move from the state of clamping the wafer 10 to the state of not clamping the wafer 10.

[0047] It should be noted that, in the present application, the aforementioned protrusions 252 may be configured in plurality, and accordingly, the first driving member 26 may also be configured in plurality or only in one, and an exemplary description is given by taking the configuration of two protrusions 252 and two first driving members 26 as an example. In order to ensure the stability of the axial rotation of the driving turntable 25, the two protrusions 252 may be arranged opposite to each other, and the two first driving members 26 may also be arranged opposite to each other, and are respectively arranged at the bottom of the two protrusions 252, and at the same time, top blocks 262 are respectively arranged on the tops of the two first driving members 26, thereby the two top blocks 262 are independently driven by the two first driving members 26, and the slope 263 formed by the top block 262 slides along the surface contour of the arc surface 253 formed by the protrusion 252, thereby jointly driving the turntable 25 to rotate axially. In order to further ensure the synchronization of the two first driving members 26, a fixing ring 264 is set on the top of the driving shaft 261 extended from the two first driving members 26, the tops of the two driving shafts 261 are connected to the fixing ring 264, and the two top blocks 262 are set on the top of the fixing ring 264, so that the two first driving members 26 simultaneously drive the fixing ring 264 to move longitudinally upward, thereby driving the two top blocks 262 to move longitudinally upward synchronously.

[0048] Ginseng Figure 8 As shown, at least one reset member 27 is arranged between the driving disk 21 and the rotating disk 25. The driving disk 21 is provided with a column 212 extending into the rotating disk 25 on the surface facing the rotating disk 25. A hooking portion 254 is formed on the inner side of the rotating disk 25. The two ends of the reset member 27 are respectively connected to the column 212 and the hooking portion 254. When the first driving member 26 stops driving the rotating disk 25 to rotate axially, the reset member 27 drives the positioning sheath 23 to reset to the wafer clamping state. Specifically, the reset member 27 can be a spring, for example. When the first driving member 26 drives the driving shaft 261 to shrink longitudinally downward, driving the top block 262 to move longitudinally downward, at this time, the rotating disk 25 is not subjected to the force applied by the first driving member 26, so that the column 212 and the hooking portion 254 are close to each other under the action of the reset member 27, thereby driving the rotating disk 25 to rotate around the first central axis B1 along the direction C2, and driving the positioning sheath 23 to rotate along the direction D1, so that the positioning sheath 23 moves from the state of not clamping the wafer 10 to the state of clamping the wafer 10.

[0049] Ginseng Figure 7 , Figures 10 to 12As shown, the inner side of the driving disk 21 is provided with a limiting hole 213 for accommodating the positioning sheath 23, and the driving disk 21 is provided with a connection portion 214 with a through hole 215 protruding downward, and the inner side of the rotating disk 25 is provided with an opening 255 for the connection portion 214 to pass through. The limiting assembly 20 also includes: a baffle 29 disposed between the rotating disk 25 and the control disk 33 to effectively isolate the rotating disk 25 and the control disk 33, thereby realizing that the rotating disk 25 and the positioning sheath 23 are stably restricted in the driving disk 21, and the baffle 29 is sleeved on the outer side of the air supply pipe 40 and abuts against the connection portion 214, and the gap A2 is specifically formed between the baffle 29 and the control disk 33. The air supply pipe 40 passes through the driving disk 21 from the through hole 215 to transport gas to the hollow cavity A. The limiting assembly 20 also includes: a second driving member 28 arranged at the bottom of the driving disk 21, the second driving member 28 forms a hollow shaft 281 connected to the driving disk 21, and when the positioning sheath 23 is in a state of clamping the wafer 10, the second driving member 28 drives the hollow shaft 281 to rotate axially to drive the driving disk 21 to rotate axially, and simultaneously drives the turntable 21, the positioning sheath 23 and the fixing ring 22 to rotate axially.

[0050] During the cleaning process of the wafer 10, in order to ensure the uniformity of the cleaning liquid spraying and avoid defects caused by static electricity, it is necessary to control the rotation of the wafer 10. When the positioning sheath 23 is in the state of clamping the wafer 10, the second driving member 28 drives the hollow shaft 281 to rotate axially around the first central axis B1, driving the driving disk 21 to rotate axially around the first central axis B1. Since the turntable 25 and the positioning sheath 23 are limited inside the driving disk 21, the positioning sheath 23 longitudinally penetrates the fixed ring 22 and the fixed ring 22 is connected to the driving disk 21, the turntable 25, the positioning sheath 23 and the fixed ring 22 are synchronously driven to rotate axially around the first central axis B1, based on which the wafer 10 clamped by the positioning sheath 23 is synchronously driven to rotate axially around the first central axis B1. Among them, the hollow shaft 281 is sleeved on the outside of the air supply pipe 40, and the first driving member 26 is arranged on the peripheral side of the second driving member 28, thereby ensuring that the device 100 is compact and stable in structure.

[0051] In the supporting device 100 for wafer cleaning shown in the present invention, the turntable 21 is first driven to rotate axially by the first driving member 26, thereby driving the positioning sheath 23 to rotate axially, causing the positioning sheath 23 to move from a state of clamping the wafer 10 to a state of not clamping the wafer 10. Then, the wafer 10 is placed on the surface of the positioning plate 232 formed by the positioning sheath 23 by a robot or manually, and the turntable 21 is driven to rotate axially by the first driving member 26, thereby driving the positioning sheath 23 to rotate axially, causing the positioning sheath 23 to move from a state of not clamping the wafer 10 to a state of clamping the wafer 10 to clamp the wafer 10. Finally, cleaning liquid is sprayed from the top of the wafer 10 to the surface of the wafer 10 to clean the wafer 10. During the cleaning process, the second driving member 28 synchronously drives the driving disk 21, the turntable 25, the positioning sheath 23 and the fixing ring 22 to rotate axially synchronously, and drives the wafer 10 clamped by the positioning sheath 23 to rotate axially synchronously to ensure the cleaning effect; at the same time, the wafer 10 is heated by the heating component 30, so that the cleaning liquid cleans the wafer 10 at a specific temperature, further ensuring the cleaning effect; in addition, gas is transported to the hollow cavity A through the gas supply pipe 40, and the gas flows from the gap A2 to the annular air gap A1, and is blown from the annular air gap A1 to the bottom edge of the wafer 10, so that the cleaning liquid at the edge of the wafer 10 is quickly blown away from the wafer 10, to prevent some cleaning liquid from flowing from the edge of the wafer 10 to the back of the wafer 10, thereby causing backflow and causing damage to mechanical parts. The gas is hot gas, and when the hot gas is blown to the bottom edge of the wafer 10, the edge of the wafer 10 can be heated again to ensure the uniformity of heating, thereby solving the problem of uneven heating of the wafer by the heating element due to the limitations of the design of the heating element. In addition, a cooling plate 32 is provided between the heating plate 31 and the control plate 33 included in the heating assembly 30 to cool the heating plate 31 and the control plate 33, thereby solving the problem that the heating element and other parts included in the supporting device will be scrapped due to high temperature under the existing high temperature conditions.

[0052] The series of detailed descriptions listed above are only specific descriptions of feasible implementation methods of the present invention. They are not intended to limit the scope of protection of the present invention. Any equivalent implementation methods or changes that do not deviate from the technical spirit of the present invention should be included in the scope of protection of the present invention.

[0053] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

[0054] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A wafer cleaning support device, characterized in that: include: A limiting component having a hollow cavity, a heating component arranged in the hollow cavity, and an air supply pipe; The limiting assembly includes: a driving disk, a fixing ring arranged above the driving disk, and a positioning sheath protruding longitudinally from the top of the fixing ring to limit the wafer, the driving disk and the fixing ring enclose the hollow cavity, the gas supply pipe is arranged at the bottom of the driving disk and longitudinally penetrates the driving disk to transport gas into the hollow cavity, an annular gas gap is formed between the heating assembly and the fixing ring for gas to blow toward the edge of the bottom surface of the wafer, and a gap is formed between the heating assembly and the gas supply pipe for the gas transported by the gas supply pipe to flow toward the annular gas gap; The heating component includes: a heating plate, a cooling plate and a control plate arranged in sequence from top to bottom vertically, a plurality of heating units are evenly arranged on the upper surface of the heating plate, and the gas transported by the gas supply pipe is hot gas, the annular air gap is formed between the heating plate, the cooling plate, the control plate and the fixing ring, the limiting component also includes: a protective plate arranged on the top of the heating plate and longitudinally exposing the annular air gap, the wafer is limited above the protective plate by the positioning sheath, and the wafer is separated from the protective plate by a certain distance.

2. The wafer cleaning support device according to claim 1, characterized in that: The cooling plate is provided with a plurality of first holes in a circumferential direction, and the heating plate is provided with second holes which are longitudinally aligned with the first holes.

3. The wafer cleaning support device according to claim 1, characterized in that: The limiting assembly also includes: a turntable embedded in the driving disk toward the side of the fixed ring and a first driving member driving the turntable to rotate axially, the positioning sheath is configured to be at least three and circumferentially arranged at the edge of the turntable and longitudinally penetrate the fixed ring, a first gear is formed at the edge of the turntable, a second gear meshing with the first gear is formed at the bottom of the positioning sheath, a positioning plate for longitudinally limiting the wafer and a positioning column for transversely limiting the wafer are formed at the top of the positioning sheath, the turntable is driven by the first driving member to rotate axially and the positioning sheath is driven to rotate axially to adjust the size of the transverse space formed between the positioning columns, so that the positioning sheath can be switched between a wafer clamping state and an un-wafer clamping state.

4. The wafer cleaning support device according to claim 3, characterized in that: A protrusion with an arc surface is set at the bottom of the turntable and passes through the driving disk. The driving disk has a strip-shaped slot for the protrusion to move. The first driving member is set at the bottom of the protrusion and extends longitudinally upward to form a driving shaft. A top block with a sloped surface is set on the top of the driving shaft. The top block is driven by the first driving member to move longitudinally upward. The slope slides along the surface contour of the arc surface and pushes the turntable to rotate axially, thereby driving the positioning sheath to rotate axially and move from a wafer clamping state to an un-wafer clamping state.

5. The wafer cleaning support device according to claim 4, characterized in that: At least one reset member is arranged between the driving disk and the rotating disk, the driving disk is provided with a column extending into the rotating disk on the surface facing the rotating disk, a hooking portion is formed on the inner side of the rotating disk, and two ends of the reset member are respectively connected to the column and the hooking portion; When the first driving member stops driving the turntable to rotate axially, the resetting member drives the positioning sheath to return to a wafer clamping state.

6. The wafer cleaning support device according to claim 3, characterized in that: The inner side of the driving disk is provided with a limiting hole for accommodating the positioning sheath, and the driving disk is provided with a connection portion with a through hole protruding downward, and the air supply pipe passes through the driving disk from the through hole; The limiting assembly also includes: a second driving member arranged at the bottom of the driving disk, the second driving member forming a hollow shaft connected to the driving disk, and when the positioning sheath is in a wafer clamping state, the second driving member drives the hollow shaft to rotate axially to drive the driving disk to rotate axially, and simultaneously drives the turntable, the positioning sheath and the fixed ring to rotate synchronously.

7. The wafer cleaning support device according to claim 6, characterized in that: The hollow shaft sleeve is arranged on the outside of the air supply pipe, and the first driving member is arranged on the peripheral side of the second driving member, and the limiting assembly also includes: a baffle plate arranged between the turntable and the control plate, the control plate has a small hole for connecting the supply line, and the cooling plate and the heating plate respectively start to longitudinally expose the first mounting hole and the second mounting hole of the small hole.

8. The wafer cleaning support device according to any one of claims 1 to 7, characterized in that: The gas transported by the gas supply pipe is nitrogen.

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