A magnetic field measurement system and method for magnetron sputtering coating composite current collector

Abstract

The present invention discloses a magnetic field measurement system and method for a composite current collector for magnetron sputtering coating, which relates to the field of magnetic field measurement technology. The method comprises: a first metal layer, a second metal layer, a base film, a third metal layer and a fourth metal layer, forming a composite current collector; in the magnetron sputtering process of coating the first metal layer or the third metal layer, plasma is generated by applying a high-frequency electric field in a plasma reaction chamber, so that the plasma bombards a target material; wherein a first magnet is installed at a first preset position below the target material; a second magnet is installed at a second preset position below the target material; the first magnet and the second magnet are used to bind the plasma around the target material; before measuring, it is determined whether the magnetron sputtering device is in a first state; when the magnetron sputtering device is in the first state, the magnetic field distribution of the preset area is measured based on a magnetic field measuring instrument to obtain magnetic field distribution data. The present application improves the sputtering efficiency.

Description

Technical Field

[0001] The present application relates to the field of magnetic field measurement technology, and in particular, to a magnetic field measurement system and method for a magnetron sputtering coating composite current collector. Background Art

[0002] The composite current collector in lithium-ion batteries mainly refers to metal foil, such as copper foil and aluminum foil. It mainly collects the current generated by the active materials of the battery and forms a larger current for external output. Therefore, the current collector is required to have high conductivity. The current development trend of the global battery industry is towards light, thin, short, high heat resistance, multifunctionality, high density, high reliability and low cost. Therefore, the selection of substrate becomes a very important influencing factor.

[0003] In the preparation process of composite current collectors. Magnetron sputtering, as an efficient physical vapor deposition method, plays an important role in the production of composite current collectors due to its advantages of low deposition temperature, fast deposition speed, good uniformity of the deposited film, and composition close to the target material composition. Magnetron sputtering technology is an advanced physical vapor deposition process that is widely used in the preparation of various functional films. This technology has the advantages of low deposition temperature, good film quality, good uniformity, and fast deposition speed. It is particularly suitable for the preparation of large-area uniform, dense and hard films.

[0004] Magnetic field measurement is crucial for magnetron sputtering systems because it directly affects sputtering efficiency and film quality. Magnetic field measurement technology has been widely used in many fields, such as geophysics, space science, biomedicine, military technology, and industrial flaw detection.

[0005] Therefore, it is very meaningful to propose a magnetic field measurement method for magnetron sputtering coating composite current collector. Summary of the invention

[0006] The embodiments of the present application provide a magnetic field measurement system and method for a magnetron sputtering coated composite current collector to solve the above technical problems.

[0007] The present application provides a magnetic field measurement system for a composite current collector for magnetron sputtering coating, comprising a composite current collector forming unit, a magnetron sputtering unit, a magnetron sputtering equipment state judgment unit, a magnetic field measurement unit, and an evaluation result determination unit; wherein,

[0008] The composite current collector forming unit is used to coat a first metal layer on one side of the base film by magnetron sputtering coating technology, and then coat a second metal layer; coat a third metal layer on the other side of the base film by magnetron sputtering coating technology, and then coat a fourth metal layer; the first metal layer, the second metal layer, the base film, the third metal layer and the fourth metal layer form a composite current collector;

[0009] The magnetron sputtering unit is used to generate plasma by applying a high-frequency electric field in a plasma reaction chamber during the magnetron sputtering process of the first metal layer or the third metal layer, so that the plasma bombards the target material; wherein a first magnet is installed at a first preset position below the target material; a second magnet is installed at a second preset position below the target material; the first magnet and the second magnet are used to bind the plasma around the target material; the plasma interacts with the surface of the target material, causing the atoms and molecules on the surface of the target material to recombine and dissociate;

[0010] The magnetron sputtering device state judgment unit is used to judge whether the magnetron sputtering device is in a first state before measuring; wherein, in the first state, the sputtering power, vacuum degree, argon purity, distance between the target and the substrate, and temperature of the substrate of the magnetron sputtering device meet a first condition;

[0011] The magnetic field measuring unit is used to measure the magnetic field distribution of a preset area based on a magnetic field measuring instrument to obtain magnetic field distribution data when the magnetron sputtering device is in the first state; wherein the magnetic field distribution includes magnetic field intensity and uniformity;

[0012] The evaluation result determination unit is used to evaluate the influence of the magnetic field on the sputtering efficiency and the film quality according to the measured magnetic field distribution data to obtain an evaluation result.

[0013] Furthermore, the magnetic field measurement system for magnetron sputtering coating composite current collector also includes:

[0014] A repeated measurement unit is used to evaluate the influence of the magnetic field on the sputtering efficiency and the film quality according to the magnetic field distribution data obtained by measurement, and after obtaining the evaluation result, adjust the parameters of the magnetic field according to the evaluation result; after adjusting the parameters of the magnetic field, repeat the step of measuring the magnetic field distribution of the preset area until the preset magnetic field distribution effect and the preset sputtering effect are achieved.

[0015] Furthermore, the parameters of the magnetic field include the position of the first magnet, the magnetic field strength of the first magnet, the position of the second magnet, and the magnetic field strength of the second magnet.

[0016] The present application provides a magnetic field measurement method for a magnetron sputtering-coated composite current collector, comprising: coating a first metal layer on one side of a base film by a magnetron sputtering coating technique, and then coating a second metal layer; coating a third metal layer on the other side of the base film by the magnetron sputtering coating technique, and then coating a fourth metal layer; the first metal layer, the second metal layer, the base film, the third metal layer and the fourth metal layer form a composite current collector;

[0017] During magnetron sputtering of the first metal layer or the third metal layer, plasma is generated by applying a high-frequency electric field in a plasma reaction chamber, so that the plasma bombards a target material;

[0018] A first magnet is installed at a first preset position below the target; a second magnet is installed at a second preset position below the target; the first magnet and the second magnet are used to bind the plasma around the target; the plasma interacts with the surface of the target, causing the atoms and molecules on the surface of the target to recombine and dissociate;

[0019] Before measuring, determining whether the magnetron sputtering device is in a first state; wherein, in the first state, the sputtering power, vacuum degree, argon purity, distance between the target and the substrate, and temperature of the substrate of the magnetron sputtering device meet a first condition;

[0020] When the magnetron sputtering device is in the first state, the magnetic field distribution of the preset area is measured based on the magnetic field measuring instrument to obtain magnetic field distribution data; wherein the magnetic field distribution includes magnetic field intensity and uniformity;

[0021] Based on the measured magnetic field distribution data, the influence of the magnetic field on the sputtering efficiency and the film quality is evaluated to obtain an evaluation result.

[0022] Furthermore, after evaluating the influence of the magnetic field on the sputtering efficiency and the film quality according to the measured magnetic field distribution data and obtaining the evaluation result, the method further includes:

[0023] adjusting parameters of the magnetic field according to the evaluation results;

[0024] After adjusting the parameters of the magnetic field, the step of measuring the magnetic field distribution in the preset area is repeated until a preset magnetic field distribution effect and a preset sputtering effect are achieved.

[0025] Furthermore, the target material is a composite copper foil or a composite aluminum foil; the magnetic field distribution in the preset area includes the magnetic field strength and uniformity in the target surface area and the magnetic field strength and uniformity in the substrate area; when the magnetron sputtering device is in the first state, the magnetic field distribution in the preset area is measured based on the magnetic field measuring instrument to obtain the magnetic field distribution data, including:

[0026] Using the magnetic field measuring instrument to measure the magnetic field strength and uniformity of the target surface area to obtain first magnetic field data;

[0027] Using the magnetic field measuring instrument to measure the magnetic field strength and uniformity of the substrate area to obtain second magnetic field data;

[0028] The magnetic field distribution data is obtained according to the first magnetic field data and the second magnetic field data.

[0029] Further, the measuring of the magnetic field strength and uniformity of the target surface area by the magnetic field measuring instrument to obtain first magnetic field data includes:

[0030] Adjusting the position of the detection plane of the magnetic field measuring instrument relative to the target surface area so that the distance from the detection plane of the magnetic field measuring instrument to the target surface area is equal to the distance between the target surface area and the first magnet;

[0031] Acquire a first magnetic field strength of a first sub-region included in the target surface region and a second magnetic field strength of a second sub-region included in the target surface region; wherein the first sub-region and the second sub-region are any two different regions included in the target surface region;

[0032] When the difference between the first magnetic field strength and the second magnetic field strength is greater than a first preset difference threshold, adjusting the distance from the detection plane of the magnetic field measuring instrument to the surface area of ​​the target material so that after the distance is adjusted, the difference between the first magnetic field strength and the second magnetic field strength is less than the first preset difference threshold;

[0033] After adjusting the distance, obtaining the magnetic field intensity data of each sub-area on the surface area of ​​the target material detected;

[0034] Calculating the uniformity of the magnetic field on the target surface area according to the detected magnetic field strength of each sub-area on the target surface area;

[0035] The first magnetic field data is determined according to the magnetic field intensity data of each sub-region of the target material surface region and the uniformity of the magnetic field on the target material surface region.

[0036] Further, the magnetic field strength and uniformity of the substrate region are measured by the magnetic field measuring instrument to obtain second magnetic field data, including:

[0037] Acquire the detected third magnetic field strength of the third sub-region included in the substrate region and the fourth magnetic field strength of the fourth sub-region included in the substrate region; wherein the third sub-region and the fourth sub-region are any two different regions included in the substrate region;

[0038] When the difference between the third magnetic field strength and the fourth magnetic field strength is greater than a second preset difference threshold, adjusting the distance between the detection plane of the magnetic field measuring instrument and the substrate area, so that after the distance is adjusted, the difference between the third magnetic field strength and the fourth magnetic field strength is less than the second preset difference threshold;

[0039] After adjusting the distance, obtaining the magnetic field intensity data of each sub-area detected on the substrate area;

[0040] Calculating the uniformity of the magnetic field on the substrate area according to the detected magnetic field strength of each sub-area on the substrate area;

[0041] The second magnetic field data is determined according to the magnetic field intensity data of each sub-region of the substrate region and the uniformity of the magnetic field on the substrate region.

[0042] Furthermore, the parameters of the magnetic field include the position of the first magnet, the magnetic field strength of the first magnet, the position of the second magnet, and the magnetic field strength of the second magnet.

[0043] Further, the target material is a copper target material or an aluminum target material; the material of the base film is polyethylene terephthalate, polypropylene or polyimide; the first metal layer is a copper metal layer or an aluminum metal layer; the second metal layer is a copper metal layer or an aluminum metal layer; the third metal layer is a copper metal layer or an aluminum metal layer; the fourth metal layer is a copper metal layer or an aluminum metal layer; the process of plating the second metal layer adopts vacuum evaporation coating technology or chemical electroplating technology; the process of plating the fourth metal layer adopts the vacuum evaporation coating technology or the chemical electroplating technology; the magnetic field measuring instrument includes at least one of the following: a torque magnetometer, a fluxmeter, an impact galvanometer and a rotating coil magnetometer;

[0044] The first condition includes: the sputtering power is in the range of 0.3 kilowatts to 30 kilowatts, the vacuum degree is higher than 0.002 Pa; the purity of argon gas is greater than 99.9%; the distance between the target and the substrate is in the range of 8 to 12 centimeters; the temperature of the substrate is in the range of 80 to 200 degrees Celsius.

[0045] Based on the embodiments provided in the present application, a first metal layer is coated on one side of a base film by magnetron sputtering coating technology, and then a second metal layer is coated thereon; a third metal layer is coated on the other side of the base film by magnetron sputtering coating technology, and then a fourth metal layer is coated thereon; the first metal layer, the second metal layer, the base film, the third metal layer and the fourth metal layer form a composite current collector; during the magnetron sputtering process of coating the first metal layer or the third metal layer, a plasma is generated by applying a high-frequency electric field in a plasma reaction chamber, so that the plasma bombards a target material; wherein a first magnet is installed at a first preset position below the target material; a second preset position below the target material A second magnet is installed at the position; the first magnet and the second magnet are used to bind the plasma around the target material; the plasma interacts with the surface of the target material, causing the atoms and molecules on the surface of the target material to recombine and dissociate; before measuring, it is determined whether the magnetron sputtering device is in the first state; when the magnetron sputtering device is in the first state, the magnetic field distribution of the preset area is measured based on the magnetic field measuring instrument to obtain the magnetic field distribution data; wherein the magnetic field distribution includes the magnetic field intensity and uniformity; according to the measured magnetic field distribution data, the influence of the magnetic field on the sputtering efficiency and the film quality is evaluated to obtain the evaluation result. This method not only improves the sputtering efficiency and the film quality by precisely controlling the magnetic field and plasma, but also enhances the controllability and repeatability of the process, providing a strong guarantee for the preparation of high-quality films. Specifically, it has the following beneficial effects: Improving sputtering efficiency: By installing the first magnet and the second magnet at a preset position below the target material, the plasma can be effectively bound around the target material. The confinement of this magnetic field increases the bombardment frequency of the positive ions in the plasma on the target material, thereby improving the sputtering efficiency and improving the film quality: the plasma interacts with the target surface, promoting the recombination and dissociation of atoms and molecules on the target surface. This process helps to form a more uniform and dense film, improving the quality and performance of the film; precisely control the sputtering conditions: determine whether the magnetron sputtering equipment is in the first state before measurement, ensuring that the sputtering process is carried out under optimal conditions, which helps to obtain better sputtering effects; optimize the magnetic field distribution: use a magnetic field measuring instrument to measure the magnetic field distribution in a preset area, and obtain magnetic field distribution data including magnetic field strength and uniformity; the strength and uniformity of the magnetic field directly affect the stability of the plasma and the sputtering efficiency; evaluation and adjustment: based on the measured magnetic field distribution data, evaluate the impact of the magnetic field on the sputtering efficiency and film quality, and obtain the evaluation results. This evaluation result can be used to further adjust the magnetic field parameters, optimize the sputtering process, and ensure that the desired film properties are obtained; improve process repeatability and reliability: through the above method steps, the consistency of each sputtering process can be ensured, and the process repeatability and reliability of film quality can be improved; strong adaptability: this method allows sputtering of targets of different materials and different requirements, has good adaptability and flexibility, and can be widely used in various film preparation fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] The drawings described herein are used to provide a further understanding of the embodiments of the present invention and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0047] Figure 1 It is a structural diagram of an optional magnetic field measurement system for a composite current collector for magnetron sputtering coating according to an embodiment of the present application;

[0048] Figure 2 The present invention is a flowchart of an optional magnetic field measurement method for a composite current collector deposited by magnetron sputtering according to an embodiment of the present application.

[0049] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0050] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0051] Alternatively, if Figure 1 As shown, the present application provides a magnetic field measurement system for a composite current collector for magnetron sputtering coating, comprising a composite current collector forming unit 105, a magnetron sputtering unit 101, a magnetron sputtering device state judgment unit 102, a magnetic field measurement unit 103 and an evaluation result determination unit 104; wherein,

[0052] The composite current collector forming unit 105 is used to coat a first metal layer on one side of the base film by magnetron sputtering coating technology, and then coat a second metal layer; coat a third metal layer on the other side of the base film by magnetron sputtering coating technology, and then coat a fourth metal layer; the first metal layer, the second metal layer, the base film, the third metal layer and the fourth metal layer form a composite current collector;

[0053] The magnetron sputtering unit 101 is used to generate plasma by applying a high-frequency electric field in a plasma reaction chamber during the magnetron sputtering process of coating the first metal layer or the third metal layer, so that the plasma bombards the target material; wherein a first magnet is installed at a first preset position below the target material; a second magnet is installed at a second preset position below the target material; the first magnet and the second magnet are used to bind the plasma around the target material; the plasma interacts with the surface of the target material, causing the atoms and molecules on the surface of the target material to recombine and dissociate;

[0054] The magnetron sputtering device state judgment unit 102 is used to judge whether the magnetron sputtering device is in a first state before measuring; wherein, in the first state, the sputtering power, vacuum degree, argon purity, distance between the target and the substrate, and temperature of the substrate of the magnetron sputtering device meet a first condition;

[0055] The magnetic field measuring unit 103 is used to measure the magnetic field distribution of a preset area based on a magnetic field measuring instrument to obtain magnetic field distribution data when the magnetron sputtering device is in the first state; wherein the magnetic field distribution includes magnetic field intensity and uniformity;

[0056] The evaluation result determination unit 104 is used to evaluate the influence of the magnetic field on the sputtering efficiency and the film quality according to the measured magnetic field distribution data to obtain an evaluation result.

[0057] Furthermore, the magnetic field measurement system for magnetron sputtering coating composite current collector also includes:

[0058] The repeated measurement unit is used to evaluate the influence of the magnetic field on the sputtering efficiency and the film quality according to the measured magnetic field distribution data, and after obtaining the evaluation results, adjust the parameters of the magnetic field according to the evaluation results; after adjusting the parameters of the magnetic field, repeat the step of measuring the magnetic field distribution of the preset area until the preset magnetic field distribution effect and the preset sputtering effect are achieved.

[0059] Furthermore, the parameters of the magnetic field include the position of the first magnet, the magnetic field strength of the first magnet, the position of the second magnet, and the magnetic field strength of the second magnet.

[0060] Alternatively, if Figure 2 As shown, the present application provides a magnetic field measurement method for a magnetron sputtering film-coated composite current collector, comprising:

[0061] S201, coating one side of the base film with a first metal layer by magnetron sputtering coating technology, and then coating the second metal layer; coating the other side of the base film with a third metal layer by magnetron sputtering coating technology, and then coating the fourth metal layer; the first metal layer, the second metal layer, the base film, the third metal layer and the fourth metal layer form a composite current collector;

[0062] S202, in the magnetron sputtering process of coating the first metal layer or the third metal layer, applying a high-frequency electric field in a plasma reaction chamber to generate plasma, so that the plasma bombards the target material;

[0063] A first magnet is installed at a first preset position below the target; a second magnet is installed at a second preset position below the target; the first magnet and the second magnet are used to bind plasma around the target; the plasma interacts with the surface of the target, causing the atoms and molecules on the surface of the target to recombine and dissociate;

[0064] S203, before measuring, determining whether the magnetron sputtering device is in a first state; wherein, in the first state, the sputtering power, vacuum degree, argon purity, distance between the target and the substrate, and temperature of the substrate of the magnetron sputtering device meet a first condition;

[0065] The first condition includes: sputtering power in the range of 0.3 kilowatts to 30 kilowatts, vacuum degree higher than 0.002 Pa, argon purity greater than 99.9%, distance between target and substrate in the range of 8 to 12 centimeters, and substrate temperature in the range of 80 to 200 degrees Celsius. Under the first condition, the magnetron sputtering equipment operates relatively stably.

[0066] S204, when the magnetron sputtering device is in the first state, measuring the magnetic field distribution of the preset area based on the magnetic field measuring instrument to obtain magnetic field distribution data; wherein the magnetic field distribution includes magnetic field intensity and uniformity;

[0067] S205, evaluating the influence of the magnetic field on the sputtering efficiency and the film quality according to the measured magnetic field distribution data, and obtaining an evaluation result.

[0068] Based on the embodiments provided in the present application, in the magnetron sputtering process, plasma is generated by applying a high-frequency electric field in a plasma reaction chamber, so that the plasma bombards the target material; wherein a first magnet is installed at a first preset position below the target material; a second magnet is installed at a second preset position below the target material; the first magnet and the second magnet are used to bind the plasma around the target material; the plasma interacts with the surface of the target material, causing the atoms and molecules on the surface of the target material to recombine and dissociate; before measuring, it is determined whether the magnetron sputtering device is in the first state; when the magnetron sputtering device is in the first state, the magnetic field distribution of the preset area is measured based on the magnetic field measuring instrument to obtain the magnetic field distribution data; wherein the magnetic field distribution includes magnetic field strength and uniformity; according to the measured magnetic field distribution data, the influence of the magnetic field on the sputtering efficiency and the film quality is evaluated to obtain the evaluation result. This method not only improves the sputtering efficiency and the film quality by precisely controlling the magnetic field and plasma, but also enhances the controllability and repeatability of the process, providing a strong guarantee for the preparation of high-quality films. Specifically, it has the following beneficial effects: Improve sputtering efficiency: By installing the first magnet and the second magnet at a preset position below the target material, the plasma can be effectively confined around the target material. The confinement of the magnetic field increases the bombardment frequency of the positive ions in the plasma on the target material, thereby improving the sputtering efficiency; Improve film quality: The plasma interacts with the target material surface, promoting the recombination and dissociation of atoms and molecules on the target material surface. This process helps to form a more uniform and dense film, improving the quality and performance of the film; precisely control the sputtering conditions: determine whether the magnetron sputtering equipment is in the first state before measurement, ensuring that the sputtering process is carried out under optimal conditions, which helps to obtain better sputtering effects; optimize the magnetic field distribution: use a magnetic field measuring instrument to measure the magnetic field distribution in a preset area, and obtain magnetic field distribution data including magnetic field strength and uniformity; the strength and uniformity of the magnetic field directly affect the stability of the plasma and the sputtering efficiency; evaluation and adjustment: based on the measured magnetic field distribution data, evaluate the impact of the magnetic field on the sputtering efficiency and film quality, and obtain the evaluation results. This evaluation result can be used to further adjust the magnetic field parameters, optimize the sputtering process, and ensure that the desired film properties are obtained; improve process repeatability and reliability: through the above method steps, the consistency of each sputtering process can be ensured, and the process repeatability and reliability of film quality can be improved; strong adaptability: this method allows sputtering of targets of different materials and different requirements, has good adaptability and flexibility, and can be widely used in various film preparation fields.

[0069] Furthermore, after evaluating the influence of the magnetic field on the sputtering efficiency and the film quality according to the measured magnetic field distribution data and obtaining the evaluation result, the method further includes:

[0070] adjusting parameters of the magnetic field according to the evaluation results;

[0071] After adjusting the parameters of the magnetic field, the step of measuring the magnetic field distribution in the preset area is repeated until a preset magnetic field distribution effect and a preset sputtering effect are achieved.

[0072] Based on the embodiments provided in the present application, the following beneficial effects are achieved: Optimizing sputtering efficiency: By adjusting the magnetic field parameters, the electron confinement capability can be enhanced, the plasma density can be increased, and thus the sputtering rate and film uniformity can be increased; Improving film quality: The optimization of the magnetic field helps to improve the microstructure morphology of the film, making it more uniform and dense, and reducing the formation of defects such as columnar crystals; Improving target utilization: By optimizing the magnetic field distribution, the uneven etching on the target can be reduced, the service life of the target can be extended, and the sputtering efficiency can be improved; Achieving more precise control: Repeatedly measuring the magnetic field distribution in a preset area can ensure the accuracy of the magnetic field parameter adjustment until the expected magnetic field distribution effect and sputtering effect are achieved; Enhancing process repeatability: Through systematic evaluation and adjustment, a standardized sputtering process can be established to improve the repeatability of film preparation; Improving film performance: The optimized magnetic field distribution helps to obtain a film with desired properties, such as hardness, elastic modulus, resistivity, etc.; Reducing production costs: Improving the utilization rate of the target and the sputtering efficiency can reduce the consumption of precious metals or high-purity alloy materials and reduce production costs.

[0073] Furthermore, the target material is a composite copper foil or a composite aluminum foil; the magnetic field distribution in the preset area includes the magnetic field strength and uniformity in the target surface area and the magnetic field strength and uniformity in the substrate area; when the magnetron sputtering device is in the first state, the magnetic field distribution in the preset area is measured based on the magnetic field measuring instrument to obtain magnetic field distribution data, including:

[0074] Using a magnetic field measuring instrument to measure the magnetic field strength and uniformity of the target surface area to obtain first magnetic field data;

[0075] Using a magnetic field measuring instrument to measure the magnetic field strength and uniformity of the substrate area to obtain second magnetic field data;

[0076] Magnetic field distribution data is obtained according to the first magnetic field data and the second magnetic field data.

[0077] Based on the embodiments provided in the present application, the following beneficial effects are achieved: Improving the bonding force between the film and the substrate: By measuring the magnetic field strength and uniformity in the target surface area, the sputtering conditions can be optimized, the adhesion between the film and the substrate can be increased, thereby improving the bonding strength and durability of the film; Improving the microstructure of the film: The measurement and analysis of the magnetic field distribution helps to understand the microstructure morphology of the film under different magnetic field conditions, thereby improving the crystal structure and mechanical properties of the film; Optimizing the sputtering efficiency: Measuring the magnetic field strength and uniformity in the substrate area can adjust the magnetic field parameters to make the plasma distribution more uniform and reduce the unevenness on the target. The difference in sputtering rate at the same position can improve the sputtering efficiency; improve the utilization rate of the target material: through magnetic field measurement and optimization, the uneven etching on the target material can be reduced, the service life of the target can be extended, and the utilization rate of the target material can be improved; achieve precise control of the magnetic field: by measuring the first magnetic field data and the second magnetic field data, the magnetic field distribution can be more accurately grasped, which is conducive to achieving higher quality thin film deposition; improve the uniformity of the thin film: research results show that by optimizing the relative magnetic permeability of the magnetic yoke and the lower ferrite material in the magnetron, and adding a magnetic conductive sheet between the inner and outer magnetic poles, the magnetic field on the target surface can be effectively uniformized and the uniformity of the thin film can be improved.

[0078] Furthermore, the magnetic field strength and uniformity of the target surface area are measured using a magnetic field measuring instrument to obtain first magnetic field data, including:

[0079] Adjusting the position of the detection plane of the magnetic field measuring instrument relative to the target surface area so that the distance from the detection plane of the magnetic field measuring instrument to the target surface area is equal to the distance between the target surface area and the first magnet;

[0080] Acquire a first magnetic field strength of a first sub-region included in the detected target surface region and a second magnetic field strength of a second sub-region included in the target surface region; wherein the first sub-region and the second sub-region are any two different regions included in the target surface region;

[0081] When the difference between the first magnetic field strength and the second magnetic field strength is greater than a first preset difference threshold, adjusting the distance from the detection plane of the magnetic field measuring instrument to the target surface area, so that after the distance is adjusted, the difference between the first magnetic field strength and the second magnetic field strength is less than the first preset difference threshold;

[0082] After adjusting the distance, obtaining the magnetic field intensity data of each sub-area on the detected target surface area;

[0083] Calculate the uniformity of the magnetic field on the target surface area according to the detected magnetic field strength of each sub-area on the target surface area;

[0084] in, is the uniformity of the magnetic field on the target surface area; is half the number of sub-areas on the target surface area; , All of them are the numbers of the sub-areas included in the target surface area; and Indicates the magnetic field intensity at a symmetrical position at a preset distance from the center position of the target surface area, where the preset distance may be half the distance from the edge of the target surface area to the center position;

[0085] The first magnetic field data is determined according to the magnetic field intensity data of each sub-region of the target material surface region and the uniformity of the magnetic field on the target material surface region.

[0086] Based on the embodiments provided in this application, the following beneficial effects are achieved: Accurate simulation of the actual sputtering environment: By adjusting the position of the magnetic field measuring instrument to make it consistent with the distance relationship between the target material and the magnet, the magnetic field environment in the actual sputtering process can be more accurately simulated.

[0087] Evaluate and ensure magnetic field uniformity: By comparing the magnetic field strength of the first sub-area and the second sub-area, the uniformity of the magnetic field can be evaluated, and possible non-uniform areas in the magnetic field can be discovered and adjusted in a timely manner; realize dynamic adjustment: when the difference in magnetic field strength exceeds the preset threshold, the difference is reduced by adjusting the position of the measuring instrument to achieve dynamic optimization of magnetic field uniformity; comprehensive data collection: after adjustment, the magnetic field strength data of all sub-areas on the target surface area are collected, providing comprehensive magnetic field distribution information for further analysis; optimize the sputtering process: based on the evaluation results of the magnetic field uniformity, the sputtering process can be optimized to obtain higher quality films.

[0088] Furthermore, the magnetic field strength and uniformity of the substrate area are measured using a magnetic field measuring instrument to obtain second magnetic field data, including:

[0089] Acquire the detected third magnetic field strength of the third sub-region included in the substrate region and the fourth magnetic field strength of the fourth sub-region included in the substrate region; wherein the third sub-region and the fourth sub-region are any two different regions included in the substrate region;

[0090] When the difference between the third magnetic field strength and the fourth magnetic field strength is greater than the second preset difference threshold, adjusting the distance between the detection plane of the magnetic field measuring instrument and the substrate area so that after the distance is adjusted, the difference between the third magnetic field strength and the fourth magnetic field strength is less than the second preset difference threshold;

[0091] After adjusting the distance, obtaining the magnetic field intensity data of each sub-area on the detected substrate area;

[0092] Calculating the uniformity of the magnetic field on the substrate area according to the detected magnetic field strength of each sub-area on the substrate area;

[0093] in, is the uniformity of the magnetic field on the substrate area; is half the number of sub-regions on the substrate area; , are the numbers of the sub-regions included in the substrate region; and Indicates the magnetic field intensity at a symmetrical position at a preset distance from the center position of the substrate area, where the preset distance may be half the distance from the edge of the target surface area to the center position;

[0094] The second magnetic field data is determined according to the magnetic field intensity data of each sub-region of the substrate region and the uniformity of the magnetic field on the substrate region.

[0095] Furthermore, the parameters of the magnetic field include the position of the first magnet, the magnetic field strength of the first magnet, the position of the second magnet, and the magnetic field strength of the second magnet.

[0096] Furthermore, the target material is a copper target material or an aluminum target material; the material of the base film is polyethylene terephthalate, polypropylene or polyimide; the first metal layer is a copper metal layer or an aluminum metal layer; the second metal layer is a copper metal layer or an aluminum metal layer; the third metal layer is a copper metal layer or an aluminum metal layer; the fourth metal layer is a copper metal layer or an aluminum metal layer; the process of plating the second metal layer adopts vacuum evaporation coating technology or chemical electroplating technology; the process of plating the fourth metal layer adopts vacuum evaporation coating technology or chemical electroplating technology; the magnetic field measuring instrument includes at least one of the following: a torque magnetometer, a fluxmeter, an impact galvanometer and a rotating coil magnetometer.

[0097] It should be noted that the embodiments implemented by the magnetic field measurement system side for magnetron sputtering coated composite current collectors provided in the present application can refer to the embodiments implemented by the magnetic field measurement method side for magnetron sputtering coated composite current collectors, and the present application will not repeat them one by one.

[0098] The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A method for measuring the magnetic field of a composite current collector for magnetron sputtering coating, comprising: S201, coating a first metal layer on one side of the base film by magnetron sputtering coating technology, and then coating a second metal layer; coating a third metal layer on the other side of the base film by the magnetron sputtering coating technology, and then coating a fourth metal layer; the first metal layer, the second metal layer, the base film, the third metal layer and the fourth metal layer form a composite current collector; S202, during the magnetron sputtering process of the first metal layer or the third metal layer, generating plasma by applying a high-frequency electric field in a plasma reaction chamber, so that the plasma bombards a target material; in, A first magnet is installed at a first preset position below the target; a second magnet is installed at a second preset position below the target; the first magnet and the second magnet are used to bind the plasma around the target; the plasma interacts with the surface of the target, causing the atoms and molecules on the surface of the target to recombine and dissociate; S203, before measuring, determining whether the magnetron sputtering device is in a first state; wherein, in the first state, the sputtering power, vacuum degree, argon purity, distance between the target and the substrate, and temperature of the substrate of the magnetron sputtering device meet a first condition; S204, when the magnetron sputtering device is in the first state, measuring the magnetic field distribution of a preset area based on a magnetic field measuring instrument to obtain magnetic field distribution data; wherein the magnetic field distribution includes magnetic field intensity and uniformity; S205, evaluating the influence of the magnetic field on the sputtering efficiency and the film quality according to the measured magnetic field distribution data, and obtaining an evaluation result; The magnetic field distribution of the preset area includes the magnetic field strength and uniformity of the target surface area and the magnetic field strength and uniformity of the substrate area; when the magnetron sputtering device is in the first state, the magnetic field distribution of the preset area is measured based on the magnetic field measuring instrument to obtain the magnetic field distribution data, including: Using the magnetic field measuring instrument to measure the magnetic field strength and uniformity of the target surface area to obtain first magnetic field data; Using the magnetic field measuring instrument to measure the magnetic field strength and uniformity of the substrate area to obtain second magnetic field data; Obtaining the magnetic field distribution data according to the first magnetic field data and the second magnetic field data; The method of measuring the magnetic field strength and uniformity of the target surface area by using the magnetic field measuring instrument to obtain first magnetic field data includes: Adjusting the position of the detection plane of the magnetic field measuring instrument relative to the target surface area so that the distance from the detection plane of the magnetic field measuring instrument to the target surface area is equal to the distance between the target surface area and the first magnet; Acquire a first magnetic field strength of a first sub-region included in the target surface region and a second magnetic field strength of a second sub-region included in the target surface region; wherein the first sub-region and the second sub-region are any two different regions included in the target surface region; When the difference between the first magnetic field strength and the second magnetic field strength is greater than a first preset difference threshold, adjusting the distance from the detection plane of the magnetic field measuring instrument to the surface area of ​​the target material so that after the distance is adjusted, the difference between the first magnetic field strength and the second magnetic field strength is less than the first preset difference threshold; After adjusting the distance, obtaining the magnetic field intensity data of each sub-area on the surface area of ​​the target material detected; Calculating the uniformity of the magnetic field on the target surface area according to the detected magnetic field strength of each sub-area on the target surface area; Wherein, EVENNESS1 is the uniformity of the magnetic field on the target surface area; n is half of the number of sub-areas on the target surface area; i and j are the numbers of the sub-areas included in the target surface area; B i With B j Indicates the magnetic field intensity at a symmetrical position at a preset distance from the center position of the target surface area; Determining the first magnetic field data according to the magnetic field intensity data of each sub-region of the target material surface region and the uniformity of the magnetic field on the target material surface region; The method of measuring the magnetic field strength and uniformity of the substrate region by using the magnetic field measuring instrument to obtain second magnetic field data includes: Acquire the detected third magnetic field strength of the third sub-region included in the substrate region and the fourth magnetic field strength of the fourth sub-region included in the substrate region; wherein the third sub-region and the fourth sub-region are any two different regions included in the substrate region; When the difference between the third magnetic field strength and the fourth magnetic field strength is greater than a second preset difference threshold, adjusting the distance between the detection plane of the magnetic field measuring instrument and the substrate area, so that after the distance is adjusted, the difference between the third magnetic field strength and the fourth magnetic field strength is less than the second preset difference threshold; After adjusting the distance, obtaining the magnetic field intensity data of each sub-area detected on the substrate area; Calculating the uniformity of the magnetic field on the substrate area according to the detected magnetic field strength of each sub-area on the substrate area; Wherein, EVENNESS2 is the uniformity of the magnetic field on the substrate area; m is half of the number of sub-areas on the substrate area; k and s are the numbers of the sub-areas included in the substrate area; B k With B s Indicates the magnetic field intensity at a symmetrical position at a preset distance from the center position of the substrate area; The second magnetic field data is determined according to the magnetic field intensity data of each sub-region of the substrate region and the uniformity of the magnetic field on the substrate region.

2. The magnetic field measurement method for a magnetron sputtering composite current collector according to claim 1, characterized in that: After evaluating the influence of the magnetic field on the sputtering efficiency and the film quality according to the measured magnetic field distribution data and obtaining the evaluation result, the method further includes: adjusting parameters of the magnetic field according to the evaluation results; After adjusting the parameters of the magnetic field, the step of measuring the magnetic field distribution in the preset area is repeated until a preset magnetic field distribution effect and a preset sputtering effect are achieved.

3. The magnetic field measurement method for a composite current collector for magnetron sputtering coating according to claim 2, characterized in that: The parameters of the magnetic field include the position of the first magnet, the magnetic field strength of the first magnet, the position of the second magnet, and the magnetic field strength of the second magnet.

4. The magnetic field measurement method for a composite current collector for magnetron sputtering coating according to claim 3, characterized in that: The target material is a copper target material or an aluminum target material; the material of the base film is polyethylene terephthalate, polypropylene or polyimide; The first metal layer is a copper metal layer or an aluminum metal layer; the second metal layer is a copper metal layer or an aluminum metal layer; the third metal layer is a copper metal layer or an aluminum metal layer; the fourth metal layer is a copper metal layer or an aluminum metal layer; The process of plating the second metal layer adopts vacuum evaporation coating technology or chemical electroplating technology; the process of plating the fourth metal layer adopts the vacuum evaporation coating technology or the chemical electroplating technology; The magnetic field measuring instrument comprises at least one of the following: a torque magnetometer, a fluxmeter, an impact galvanometer and a rotating coil magnetometer; The first condition includes: the sputtering power is in the range of 0.3 kilowatts to 30 kilowatts, the vacuum degree is higher than 0.002 Pa; the purity of argon gas is greater than 99.9%; the distance between the target and the substrate is in the range of 8 to 12 centimeters; the temperature of the substrate is in the range of 80 to 200 degrees Celsius.

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