A method and device for protecting MOS tube energy accumulation

Abstract

The present invention relates to the field of power supply control technology, and discloses a method and device for MOS tube energy accumulation protection. The method comprises: determining a voltage anomaly protection threshold according to the system operating voltage and voltage changes under different states; determining a MOS tube protection mechanism according to different working states of the system; detecting the relationship between the actual voltage value of the current state and the voltage anomaly protection threshold, and triggering the MOS tube protection mechanism. The method of the present invention ensures that the system can identify potential voltage anomalies under different working states and take protective measures in a timely manner.

Description

Technical Field

[0001] The present invention relates to the technical field of power supply control, and in particular to a method and device for protecting energy accumulation of a MOS tube. Background Art

[0002] In the existing ABS (anti-lock braking system), MOS tubes (metal oxide semiconductor field effect transistors) are key power devices, and are usually protected from damage due to various electrical stresses during operation through measures such as overcurrent protection, overvoltage protection, overtemperature protection, reverse voltage protection, and ESD (electrostatic discharge) protection. These traditional protection methods mainly rely on monitoring and responding to a single parameter (such as current, temperature, or voltage). For example, when the current is too large, a circuit breaker or current limit is triggered, when the voltage is too high, the voltage is limited by a clamping element, or when the temperature is too high, the load is reduced or the circuit is cut off. However, these methods often only trigger protection actions after the parameters exceed the safety threshold, and lack comprehensive consideration of voltage fluctuations under different working conditions, making it difficult to cope with complex working environments.

[0003] Due to the complex and ever-changing working environment of the ABS system, the MOS tube may face the combined influence of multiple parameters in different states, and the existing protection strategy has limitations in dealing with such complex situations. Specific problems include response lag, single protection strategy and poor system stability, which result in the MOS tube not being protected in time when the voltage gradually approaches the critical value. Energy accumulation may occur, causing overheating or breakdown, affecting the overall reliability and safety of the ABS system. Therefore, a method of MOS tube energy accumulation protection is urgently needed to solve the above problems. Summary of the invention

[0004] In view of this, the present invention provides a method and device for protecting energy accumulation of a MOS tube, so as to ensure that abnormal voltage conditions can be identified under different working conditions and protective measures can be taken in a timely manner.

[0005] Specifically, the present application is implemented through the following technical solutions:

[0006] A first aspect of the present invention provides a method for protecting a MOS tube from energy accumulation, comprising:

[0007] Determine the voltage anomaly protection threshold according to the system operating voltage and voltage changes under different states;

[0008] Determine the MOS tube protection mechanism according to the different working states of the system;

[0009] Detect the relationship between the actual voltage value in the current state and the voltage abnormality protection threshold, and trigger the MOS tube protection mechanism.

[0010] According to an embodiment of the present invention, the MOS tube protection mechanism includes:

[0011] When the system is in the initialization state, the external power supply voltage is monitored in real time. If the power supply voltage is greater than or equal to the voltage abnormality protection threshold, the output voltage of the power chip is kept in the off state;

[0012] If the supply voltage is lower than the voltage abnormality protection threshold, the normal mode is entered and the output voltage of the power chip is turned on.

[0013] According to an embodiment of the present invention, the MOS tube protection mechanism includes:

[0014] When the system is in the ignition power-on state, the external power supply voltage is monitored in real time. If the power supply voltage is greater than or equal to the voltage abnormality protection threshold, the output voltage state of the power supply chip before the ignition power-on state is maintained unchanged.

[0015] According to an embodiment of the present invention, the MOS tube protection mechanism further includes:

[0016] When the system is in the ignition power-off state, the external power supply voltage is monitored in real time. If the power supply voltage is greater than or equal to the voltage abnormality protection threshold, the output voltage state of the power supply chip before the ignition power-off state is maintained unchanged.

[0017] According to an embodiment of the present invention, after the system is initialized, the system is cyclically detected to determine the external power supply voltage state, including:

[0018] After the system is initialized and before the system enters the low power mode, when the power supply voltage exceeds the voltage abnormality protection threshold, the output voltage state of the power chip is kept unchanged.

[0019] According to an embodiment of the present invention, the low power consumption mode includes a sleep mode and a standby mode.

[0020] According to an embodiment of the present invention, the method for determining the voltage anomaly protection threshold includes:

[0021] According to the system operation data, collect the real-time voltage and status data of the system, and annotate the fault events and normal voltage data as the annotated data set;

[0022] Train the support vector model of radial basis function kernel using labeled dataset;

[0023] Support vector models were evaluated using cross-validation and independent test sets;

[0024] The trained support vector model dynamically determines the voltage anomaly protection threshold according to the actual voltage conditions.

[0025] A second aspect of the present invention provides a device for protecting a MOS tube from energy accumulation, which is used to execute the method for protecting a MOS tube from energy accumulation of the first aspect, comprising:

[0026] Protection threshold determination module: determines the voltage abnormality protection threshold according to the system operating voltage and voltage changes under different states;

[0027] Protection mechanism determination module: determines the MOS tube protection mechanism according to different working states of the system;

[0028] Trigger protection module: detects the relationship between the actual voltage value in the current state and the voltage abnormality protection threshold, and triggers the MOS tube protection mechanism.

[0029] A third aspect of the present invention provides a non-transitory computer-readable storage medium storing a computer program, wherein the computer program implements a method for energy aggregation protection of a MOS tube when executed by a processor.

[0030] A fourth aspect of the present invention provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements a method for energy aggregation protection of a MOS tube when executing the computer program.

[0031] The technical solution of the present invention includes at least the following technical effects:

[0032] By adopting support vector model training and radial basis function kernel, it is possible to learn from system operation data and dynamically adjust the voltage anomaly protection threshold. The threshold can be optimized according to the actual working environment and system status changes, thereby enhancing the adaptability and responsiveness of the system.

[0033] Determine and trigger the protection mechanism according to different working states, which can ensure that the system can respond in time under any potential high-risk voltage conditions and prevent the damage of MOS tubes through the output voltage of the power chip;

[0034] Using machine learning models to dynamically adjust and optimize thresholds improves the intelligence of protection strategies, enabling the system to better adapt to changing environmental conditions and voltage fluctuations, and enhancing the stability of the entire system.

[0035] Accurate protection mechanisms can significantly reduce failures caused by voltage anomalies, reduce maintenance costs, and improve system availability and user satisfaction. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 is a flow chart of a method for protecting MOS tube energy accumulation provided by an embodiment of the present invention;

[0037] Figure 2 It is a schematic diagram of the structure of a device for protecting MOS tube energy accumulation provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0038] The present disclosure will now be discussed with reference to several exemplary embodiments. It should be understood that these embodiments are discussed only to enable those skilled in the art to better understand and thus implement the present disclosure, rather than implying any limitation on the scope of the present disclosure.

[0039] In automotive electronic systems, the anti-lock braking system (ABS) is a critical safety technology. The ABS system monitors the wheel speed and braking torque to prevent the wheels from locking during emergency braking, thereby maintaining the vehicle's directional stability and controllability and improving driving safety. With the advancement of automotive electronic technology, the complexity and performance requirements of the ABS system are also constantly increasing. Among them, power management and protection of key components (such as MOS tubes) are particularly important.

[0040] In ABS systems, MOS tubes are usually used to control motor drive and power management, responsible for key tasks such as switching high current paths and adjusting braking force distribution. However, the working environment of ABS systems is complex and often faces severe challenges such as voltage fluctuations and transient overvoltage. For example, when the vehicle starts or stops, emergency braking, and in poor road conditions, the power supply system may experience abnormal conditions such as voltage surges and transient voltage spikes. If these voltages are not handled in a timely manner, they may cause overload or breakdown of the MOS tube, thereby affecting the normal operation of the ABS system and even endangering vehicle safety.

[0041] Traditional ABS systems mostly rely on fixed voltage thresholds or simple overcurrent protection mechanisms to protect MOS tubes. This protection method is often limited in effect when facing complex voltage fluctuations and cannot fully cope with various sudden voltage anomalies. For example, during vehicle ignition or emergency braking, the supply voltage may instantly exceed the tolerance range of the MOS tube, resulting in energy accumulation, which can cause overheating or damage to the MOS tube. In addition, when the vehicle enters a low-power mode (such as entering standby or sleep mode after parking), voltage fluctuations may still occur, but traditional protection mechanisms often cannot respond in time under low-consumption conditions.

[0042] In order to solve these problems, this solution proposes an energy accumulation protection method and device for protecting MOS tubes in ABS systems. The method sets the voltage abnormality protection threshold according to the system operating voltage and the voltage changes under different states, and determines the protection mechanism of the MOS tube according to different working states (such as system initialization, ignition power-on, ignition power-off, etc.). When the system detects a voltage abnormality, the corresponding protection measures are immediately triggered to ensure that the MOS tube is still effectively protected under voltage fluctuations.

[0043] See also Figure 1 As shown, a method for protecting MOS tube energy accumulation provided by an embodiment of the present application includes:

[0044] Determine the voltage anomaly protection threshold according to the system operating voltage and voltage changes under different states;

[0045] Determine the MOS tube protection mechanism according to the different working states of the system;

[0046] Detect the relationship between the actual voltage value in the current state and the voltage abnormality protection threshold, and trigger the MOS tube protection mechanism.

[0047] The MOS tube energy accumulation protection method of the present invention is mainly applied to ABS system. The method aims to prevent the MOS tube from being broken down in a high voltage environment by real-time voltage monitoring and controlling the output of the power chip at a critical moment, thereby improving the reliability and hardware life of the entire ABS system.

[0048] Before carrying out the implementation of the present invention, a series of detailed preliminary preparations need to be carried out to ensure the comprehensiveness and practicality of the technical solution.

[0049] In terms of system and component selection, selecting appropriate hardware components is the key to realizing the present invention. This includes selecting appropriate power supply chips and high-precision ADC (analog-to-digital converter) modules to ensure the accuracy and reliability of voltage monitoring. In a specific embodiment of the present invention, the power supply chip selects a 1076 mode power supply chip, and the ADC module selects a 10-bit ADC.

[0050] After selecting the components, build a preliminary prototype of the hardware and software. Test the MOS protection mechanism in the prototype by simulating high voltage conditions to ensure accurate execution at critical moments. The test results will be used to verify the effectiveness of the system design and make necessary adjustments to the prototype.

[0051] According to one embodiment of the present invention, a method for determining a voltage anomaly protection threshold includes:

[0052] According to the system operation data, collect the real-time voltage and status data of the system, and annotate the fault events and normal voltage data as the annotated data set;

[0053] Train the support vector model of radial basis function kernel using labeled dataset;

[0054] Support vector models were evaluated using cross-validation and independent test sets;

[0055] The trained support vector model dynamically determines the voltage anomaly protection threshold according to the actual voltage conditions.

[0056] Specifically, the method for determining the voltage abnormality protection threshold includes:

[0057] Collect real-time voltage readings, system status, and historical fault records from the ABS system as raw data; extract key features from the raw data, such as voltage peak, average voltage, voltage fluctuation rate, and time interval; classify and annotate key feature data, and annotate high-voltage events and normal voltage events that cause MOS tube damage.

[0058] The support vector model (SVM) is selected as the core prediction model to handle the classification problem, and the radial basis function (RBF) is used as the kernel function of SVM to handle the nonlinear characteristics of voltage data. The SVM model is trained using the training data set, and the model parameters are optimized to obtain the best classification performance.

[0059] The model was verified and tested. The performance of the SVM model on different subsets was evaluated through cross-validation technology to ensure that the model had good generalization ability. In addition, independent test data sets were used to test indicators such as accuracy, recall rate, and F1 score to ensure the effectiveness of the model in practical applications.

[0060] The trained SVM model is integrated into the control unit of the ABS system to monitor the voltage status in real time and predict possible high voltage risks, and automatically adjust the voltage abnormality protection threshold of the power chip according to the prediction results to deal with the predicted high voltage risks.

[0061] According to an embodiment of the present invention, a corresponding MOS tube protection mechanism is set according to different working states of the system. In the method of the present invention, the MOS tube protection mechanism includes:

[0062] When the system is in the initialization state, the external power supply voltage is monitored in real time. If the power supply voltage is greater than or equal to the voltage abnormality protection threshold, the output voltage of the power chip is kept in the off state; if the power supply voltage is less than the voltage abnormality protection threshold, it enters the normal mode and the output voltage of the power chip is turned on.

[0063] When the system is in the ignition power-on state, the external power supply voltage is monitored in real time. If the power supply voltage is greater than or equal to the voltage abnormality protection threshold, the output voltage state of the power supply chip before the ignition power-on state is maintained unchanged.

[0064] When the system is in the ignition power-off state, the external power supply voltage is monitored in real time. If the power supply voltage is greater than or equal to the voltage abnormality protection threshold, the output voltage state of the power supply chip before the ignition power-off state is maintained unchanged.

[0065] After the system is initialized, the system is tested cyclically to determine the external power supply voltage status, including:

[0066] After the system is initialized and before the system enters a low power mode, such as a sleep mode or a standby mode, when the power supply voltage exceeds the voltage abnormality protection threshold, the output voltage state of the power chip is kept unchanged.

[0067] Finally, after determining the voltage anomaly protection threshold, the MOS tube protection mechanism is triggered based on the system's working status and the relationship between the actual voltage value and the voltage anomaly protection threshold.

[0068] Specifically, in combination with the ABS system in the embodiment of the present invention, in actual operation, when the system is in the initialization protection stage, that is, when the system is only connected to the normal 12V input, the system external power supply voltage is detected. If the power supply voltage is detected to be not less than the voltage abnormality protection threshold, the system is identified as a high voltage state. At this time, the 5V output of the 1076 mode power supply chip is kept in the off state to prevent high voltage from causing damage to the power supply and components; if the monitored power supply voltage is lower than the voltage abnormality protection threshold, the system is within the safe voltage range, allowing the 5V voltage of the 1076 mode power supply chip to output normally.

[0069] When the ABS system is in the ignition power-on state protection, that is, after the ABS system has been connected to the normal 12V input, when the ignition power is further turned on, the external power supply voltage of the system is detected again; if the power supply voltage is not less than the voltage abnormality protection threshold, the 5V output state of the 1076 mode power supply chip is kept consistent with the state before the ignition power is turned on, and no changes are made; if the power supply voltage is lower than the voltage abnormality protection threshold, the 5V voltage continues to be output normally or adjusted according to the actual situation.

[0070] When the ABS system is in the ignition power-off state protection, that is, when the system is powered off. After the power-off delay before power-off ends, the system external power supply voltage is tested again. If the power supply voltage is not less than the voltage abnormality protection threshold at this time, the 5V output state of the 1076 mode power supply chip is kept consistent with the state before power-off sleep to avoid damage caused by excessive voltage. If the power supply voltage is lower than the voltage abnormality protection threshold, that is, the external power supply voltage is normal, the 5V output is turned off or kept off as needed.

[0071] After the ABS system is initialized and before entering the sleep mode or standby mode, the system's external power supply voltage is cyclically detected. When the power supply voltage exceeds the voltage abnormality protection threshold, the current output voltage state of the 1076-mode power supply chip is kept consistent with that before the detection. If the current power supply voltage is lower than the voltage abnormality protection threshold, the 1076-mode power supply chip is controlled to open and close as needed.

[0072] The MOS tube energy aggregation protection method of the present invention can effectively prevent the breakdown and damage of the MOS tube caused by high voltage by implementing accurate voltage detection and control at the key voltage point, namely the voltage abnormality protection threshold. By real-time monitoring and responding to high voltage risks, the stable operation of the system during voltage fluctuations is ensured, and system failure caused by MOS tube damage is avoided. The durability and long-term performance of the entire system are significantly improved, and the maintenance cost and repair time of the system are reduced.

[0073] See also Figure 2 As shown, the present invention also provides a MOS tube energy accumulation protection device, comprising:

[0074] Protection threshold determination module: determines the voltage abnormality protection threshold according to the system operating voltage and voltage changes under different states;

[0075] Protection mechanism determination module: determines the MOS tube protection mechanism according to different working states of the system;

[0076] Trigger protection module: detects the relationship between the actual voltage value in the current state and the voltage abnormality protection threshold, and triggers the MOS tube protection mechanism.

[0077] The present invention also provides a non-transient computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, a method for implementing energy aggregation protection of a MOS tube is implemented.

[0078] The present invention also provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the method for energy aggregation protection of a MOS tube is implemented when the processor executes the computer program.

[0079] Those of ordinary skill in the art will appreciate that the modules and algorithm steps described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0080] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the above-described devices and equipment can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0081] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the modules is only a logical function division. There may be other division methods in actual implementation, such as multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or modules, which can be electrical, mechanical or other forms.

[0082] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical modules, that is, they may be located in one place or distributed on multiple network modules. Some or all of the modules may be selected according to actual needs to achieve the purpose of the embodiments of the present invention.

[0083] In addition, each functional module in the embodiment of the present invention may be integrated into one processing module, or each module may exist physically separately, or two or more modules may be integrated into one module.

[0084] If the functions are implemented in the form of software function modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the energy-saving signal sending / receiving method of each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a ROM, a RAM, a magnetic disk, or an optical disk.

[0085] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the above features are replaced with (but not limited to) technical features with similar functions disclosed in the present application.

[0086] It should be understood that the size of the sequence number of each step in the content of the invention and the embodiments of the present invention does not absolutely mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present invention. For the purpose of example and description, the foregoing description of the implementation of the present disclosure has been given. The foregoing description is not exhaustive and is not intended to limit the present disclosure to the exact form disclosed. Various deformations and modifications may exist according to the above teachings, or various deformations and modifications may be obtained from the practice of the present disclosure. These embodiments are selected and described to illustrate the principles of the present disclosure and its practical application, so that those skilled in the art can use the present disclosure in various embodiments and various modifications suitable for the specific purpose conceived.

Claims

1. A method for protecting MOS tube energy accumulation, characterized in that: include: Determine the voltage anomaly protection threshold according to the system operating voltage and voltage changes under different states; Determine the MOS tube protection mechanism according to the different working states of the system; Detect the relationship between the actual voltage value in the current state and the voltage abnormality protection threshold, and trigger the MOS tube protection mechanism; The MOS tube protection mechanism includes: When the system is in the initialization state, the external power supply voltage is monitored in real time. If the power supply voltage is greater than or equal to the voltage abnormality protection threshold, the output voltage of the power chip is kept in the off state; If the supply voltage is lower than the voltage abnormality protection threshold, it enters the normal mode and the output voltage of the power chip is turned on; When the system is in the ignition power-on state, the external power supply voltage is monitored in real time. If the power supply voltage is greater than or equal to the voltage abnormality protection threshold, the output voltage state of the power chip before the ignition power-on state is maintained unchanged; When the system is in the ignition power-off state, the external power supply voltage is monitored in real time. If the power supply voltage is greater than or equal to the voltage abnormality protection threshold, the output voltage state of the power supply chip before the ignition power-off state is maintained unchanged.

2. A method for protecting MOS tube energy accumulation as claimed in claim 1, characterized in that: After the system is initialized, the system is tested cyclically to determine the external power supply voltage status, including: After the system is initialized and before the system enters the low power mode, when the power supply voltage exceeds the voltage abnormality protection threshold, the output voltage state of the power chip is kept unchanged.

3. A method for protecting MOS tube energy accumulation as claimed in claim 2, characterized in that: The low power consumption mode includes a sleep mode and a standby mode.

4. A method for protecting MOS tube energy accumulation as claimed in claim 1, characterized in that: The method for determining the voltage abnormality protection threshold comprises: According to the system operation data, collect the real-time voltage and status data of the system, and annotate the fault events and normal voltage data as the annotated data set; Train the support vector model of radial basis function kernel using labeled dataset; Support vector models were evaluated using cross-validation and independent test sets; The trained support vector model dynamically determines the voltage anomaly protection threshold according to the actual voltage conditions.

5. A device for protecting MOS tube energy accumulation, characterized in that: The method for performing the MOS tube energy concentration protection according to any one of claims 1 to 4 comprises: Protection threshold determination module: determines the voltage abnormality protection threshold according to the system operating voltage and voltage changes under different states; Protection mechanism determination module: determines the MOS tube protection mechanism according to different working states of the system; Trigger protection module: detects the relationship between the actual voltage value in the current state and the voltage abnormality protection threshold, and triggers the MOS tube protection mechanism.

6. A non-transitory computer-readable storage medium, characterized in that: The non-transitory computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the method for protecting energy accumulation of a MOS tube according to any one of claims 1 to 4 is implemented.

7. An electronic device, characterized in that: The invention comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, a method for energy aggregation protection of a MOS tube as claimed in any one of claims 1 to 4 is implemented.

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