Semiconductor equipment modification method, device and equipment based on real-time filtering

Abstract

This invention discloses a method, apparatus, and device for retrofitting semiconductor equipment based on real-time filtering. The method includes adjusting the brightness of a light source to obtain a first sampling signal output from a first channel and a second sampling signal output from a second channel; obtaining a first numerical waveform corresponding to the first sampling signal and a second numerical waveform corresponding to the second sampling signal based on threshold adjustment; synchronously acquiring the first rising edge of the first numerical waveform and the second rising edge of the second numerical waveform within the same frame period; and performing real-time filtering on the first and second numerical waveforms based on the earlier rising edge of the first and second rising edges. This invention, through light source adjustment, threshold adjustment, and real-time filtering, filters the positioning sampling signal of a transparent wafer into waveform characteristics corresponding to those of a conventional wafer, enabling the equipment to be compatible with transparent wafer usage scenarios. The retrofitting scheme is simple, low-cost, and improves the equipment's usability and market value.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor detection technology, and in particular to a semiconductor equipment modification method, device and equipment based on real-time filtering. Background Art

[0002] With the rise of third-generation semiconductors, semiconductor equipment faces many new application scenarios, such as the inspection and production scenarios of transparent wafers such as silicon carbide and gallium nitride.

[0003] In the existing pre-positioning devices of semiconductor equipment, silicon optical sensors or image sensors are usually used to pre-position the center and notch of the wafer to meet the system requirements of wafer handling. When the optical path of the silicon optical sensor or image sensor is blocked by the wafer, the sensor outputs a high level, and when the optical path of the silicon optical sensor or image sensor is not blocked by the wafer, the sensor outputs a low level, thereby pre-positioning the wafer by reading the duty cycle change of the sensor detection signal.

[0004] Figure 1 A schematic diagram of a waveform of a silicon wafer detection signal of an existing pre-positioning device; Figure 2 The waveform diagram of the transparent wafer detection signal of an existing pre-positioning device is shown in FIG. Curve I represents the waveform curve of the detection signal of the silicon wafer output by the sensor, that is, the silicon wafer sampling signal; Curve II represents the waveform curve of the exposure trigger signal; Curve I' represents the waveform curve of the detection signal of the transparent wafer output by the sensor, that is, the transparent wafer sampling signal; Curve II' represents the numerical waveform corresponding to the sampling signal. The ordinates of Curve I, Curve II, Curve I' and Curve II' are voltage, and the abscissa is time.

[0005] See also Figure 1 and Figure 2 As shown, when the silicon wafer is pre-positioned and the silicon wafer does not block the light path, the sensor outputs a continuous low-level signal. Figure 1 After the t0' moment in the figure, the silicon wafer blocks the light path and continuously outputs a high-level signal. Since the transparent wafer is more transparent than the original silicon wafer, it cannot continuously block the light to form a continuous high level. At the t1' moment corresponding to the edge of the transparent wafer, total reflection is generated to form a spike waveform (i.e., black edge effect), which destroys the signal characteristics and timing relationship of the detection signal, resulting in the failure of positioning analysis. Therefore, it is necessary to adapt the existing semiconductor measurement equipment, especially the wafer pre-positioning system. Summary of the invention

[0006] The present invention provides a semiconductor equipment modification method, device and equipment based on real-time filtering to solve the problem that the existing transparent wafer light transmission destroys the positioning signal characteristics and timing of the semiconductor measurement machine, resulting in the failure of pre-positioning analysis, so that the semiconductor equipment can be compatible with the transparent wafer usage scenario.

[0007] According to one aspect of the present invention, a semiconductor device modification method based on real-time filtering is provided, wherein the semiconductor device comprises a light source and an image sensor arranged in a pixel array, the image sensor being used to collect an image of a wafer to be tested under the illumination of the light source, and sampling signals of two adjacent image sensors being outputted via a first channel and a second channel, respectively. The method comprises: performing a brightness reduction adjustment on the light source to obtain a first sampling signal outputted by the first channel and a second sampling signal outputted by the second channel; obtaining a first digitized waveform corresponding to the first sampling signal and a second digitized waveform corresponding to the second sampling signal based on a threshold adjustment; synchronously collecting a first rising edge of the first digitized waveform and a second rising edge of the second digitized waveform within the same frame period; and performing real-time filtering processing on the first digitized waveform and the second digitized waveform according to the first rising edge and the second rising edge.

[0008] Optionally, the real-time filtering processing of the first digitized waveform and the second digitized waveform according to the prior rising edge of the first rising edge and the second rising edge includes: when the first rising edge is the prior rising edge, the first digitized waveform in the current frame period is set to a high level based on the first rising edge, and after a preset delay time, the second digitized waveform in the current frame period is set to a high level; when the second rising edge is the prior rising edge, the second digitized waveform in the current frame period is set to a high level based on the second rising edge, and after the preset delay time, the first digitized waveform in the current frame period is set to a high level.

[0009] Optionally, the preset delay time is established based on a shift clock period within a single frame period.

[0010] Optionally, the synchronous acquisition of the first rising edge of the first digitized waveform and the second rising edge of the second digitized waveform within the same frame period includes: responding to the first rising edge based on a first edge interrupt; responding to the second rising edge based on a second edge interrupt; wherein the first edge interrupt and the second edge interrupt are processed in parallel.

[0011] Optionally, a response time of the first edge interrupt is less than 1 microsecond, and a response time of the second edge interrupt is less than 1 microsecond.

[0012] Optionally, within the same frame period, the first edge interrupt and the second edge interrupt only execute one interrupt response.

[0013] Optionally, the method of obtaining a first digitized waveform corresponding to the first sampling signal and a second digitized waveform corresponding to the second sampling signal based on threshold adjustment includes: determining a first threshold based on a wafer edge waveform in the first sampling signal, and digitizing the first sampling signal based on the first threshold to obtain a first digitized waveform; determining a second threshold based on the wafer edge waveform in the second sampling signal, and digitizing the second sampling signal based on the second threshold to obtain a second digitized waveform.

[0014] Optionally, after performing real-time filtering on the first digitized waveform and the second digitized waveform according to the prior rising edge of the first rising edge and the second rising edge, the method further includes: clearing the filtered waveform based on an exposure trigger signal; and / or, starting rising edge acquisition of the next frame period based on the exposure trigger signal.

[0015] According to another aspect of the present invention, there is provided a semiconductor equipment modification device based on real-time filtering, wherein the semiconductor equipment comprises a light source and an image sensor arranged in a pixel array, the image sensor being used to collect an image of a wafer to be tested under the illumination of the light source, and sampling signals of two adjacent image sensors being outputted via a first channel and a second channel, respectively. The device comprises: an optical path adjustment module, for performing brightness adjustment on the light source to obtain a first sampling signal outputted by the first channel and a second sampling signal outputted by the second channel; a circuit adjustment module, for obtaining a first digitized waveform corresponding to the first sampling signal and a second digitized waveform corresponding to the second sampling signal based on threshold adjustment; an edge acquisition module, for synchronously acquiring a first rising edge of the first digitized waveform and a second rising edge of the second digitized waveform within the same frame period; and a filtering processing module, for performing real-time filtering processing on the first digitized waveform and the second digitized waveform according to the first rising edge and the second rising edge.

[0016] According to another aspect of the present invention, an electronic device is provided, comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the above-mentioned semiconductor device modification method based on real-time filtering.

[0017] The technical solution of the embodiment of the present invention obtains a first sampling signal output by a first channel and a second sampling signal output by a second channel by dimming the light source; obtains a first digitized waveform corresponding to the first sampling signal and a second digitized waveform corresponding to the second sampling signal based on a sampling threshold adjustment; synchronously collects a first rising edge of the first digitized waveform and a second rising edge of the second digitized waveform within the same frame period; performs real-time filtering processing on the first digitized waveform and the second digitized waveform according to the first rising edge of the second rising edge, and filters the positioning signal of the transparent wafer into a waveform feature corresponding to a conventional wafer, thereby solving the problem that the existing transparent wafer light transmission destroys the positioning signal feature and timing of the semiconductor measurement machine, resulting in the failure of pre-positioning analysis, and enables semiconductor equipment to be compatible with transparent wafer usage scenarios. The transformation plan is simple and low-cost, and can improve the use value and market value of semiconductor equipment.

[0018] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0020] Figure 1 The figure is a waveform diagram of a silicon wafer detection signal of an existing pre-positioning device.

[0021] Figure 2 The figure is a waveform diagram of a transparent wafer detection signal of an existing pre-positioning device.

[0022] Figure 3 A flowchart of a semiconductor device modification method based on real-time filtering provided in Embodiment 1 of the present invention.

[0023] Figure 4 A waveform diagram of a real-time filtering process provided in the first embodiment of the present invention.

[0024] Figure 5 A waveform diagram of another real-time filtering process provided in the first embodiment of the present invention.

[0025] Figure 6 A flow chart of another semiconductor device modification method based on real-time filtering provided in Embodiment 1 of the present invention.

[0026] Figure 7 A flowchart of another semiconductor device modification method based on real-time filtering provided in the first embodiment of the present invention.

[0027] Figure 8 A schematic diagram of a filtering method based on threshold adjustment provided in Embodiment 1 of the present invention.

[0028] Fig. 9 A schematic structural diagram of a semiconductor device modification device based on real-time filtering provided in Embodiment 2 of the present invention.

[0029] Fig.10 It is a structural schematic diagram of an electronic device for implementing a semiconductor device transformation method based on real-time filtering according to an embodiment of the present invention. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0031] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0032] Embodiment 1

[0033] Figure 3 A flowchart of a semiconductor device modification method based on real-time filtering is provided in Embodiment 1 of the present invention. This embodiment is applicable to the application scenario of modifying a non-transparent wafer pre-positioning detection device into a transparent wafer pre-positioning detection device.

[0034] In the present application, the semiconductor device includes a light source and an image sensor (charge-coupled device, abbreviated as CCD) arranged in a pixel array. The light source is used to emit light of a specific color and a specific wavelength to the wafer to be tested; the image sensor is used to collect image data of the light source passing through the wafer to be tested, and output a corresponding sampling signal based on the light intensity. When the wafer to be tested blocks the light source, the sampling signal output by the image sensor is a high-level signal; when the wafer to be tested does not block the light source, the sampling signal output by the image sensor is a low-level signal.

[0035] In the present application, the image sensor structure is arranged in a sampling pixel array, and two adjacent image sensors belong to odd and even groups, and the sampling signals of the two adjacent image sensors are output through the first channel and the second channel respectively. The image sensors are linearly shifted and output in sequence. In a real light distribution environment, the luminous flux itself is an analog quantity with increases and decreases, is not monotonous, and has a certain amount of noise. Therefore, from a macroscopic point of view, the image sensor outputs a frame of photographic acquisition data to reflect the spatial light distribution; from a microscopic point of view, the sampling signals of the two adjacent image sensors are cross-entangled, and there are different situations such as the sampling signal of the first channel is output first, or the sampling signal of the second channel is output first.

[0036] See also Figure 3 As shown, the semiconductor device modification method based on real-time filtering of the present application specifically includes the following steps:

[0037] S1: dimming the light source to obtain a first sampling signal output by the first channel and a second sampling signal output by the second channel.

[0038] In this embodiment, the light source is dimmed based on the response amplitude of the sampling signal output by the image sensor, so that the first sampling signal and the second sampling signal can have a higher voltage amplitude (for example, the voltage amplitude reaches 1.5V).

[0039] Specifically, the waveform of the first sampling signal of the present application includes at least a peak waveform (i.e., a black edge effect) formed by total reflection at the edge or notch of the wafer, a clutter signal generated by light interference (e.g., diffraction caused by insufficient light), and a high-level signal generated after the wafer shields the light source. The waveform of the second sampling signal of the present application includes at least a peak waveform (i.e., a black edge effect) generated at the edge or notch of the wafer, a clutter signal generated by light interference, and a high-level signal generated after the wafer shields the light source.

[0040] S2: Acquire a first digitized waveform corresponding to the first sampling signal and a second digitized waveform corresponding to the second sampling signal based on the threshold adjustment.

[0041] The threshold is a reference voltage value used to digitize the sampled signal.

[0042] In this embodiment, the threshold of the comparator is adjusted by a hardware circuit, and the threshold is sufficient to set at least a portion of the signal of the peak waveform at the edge or notch of the wafer to a high level signal.

[0043] The semiconductor device of the present application is also provided with a signal processing module, which is provided with a comparator, and the comparator is used to compare the sampling signal output by the image sensor with the threshold of the comparator, and set the sampling signal with a voltage amplitude less than the threshold to a low-level signal, and set the sampling signal with a voltage amplitude greater than the threshold to a high-level signal.

[0044] Specifically, after the image sensors of the odd and even groups are output through the first channel and the second channel respectively, the comparison thresholds of the two channels are sampled respectively. After the threshold is adjusted, the signal whose voltage amplitude is lower than the threshold in the first sampling signal is set to a low level, and the signal whose voltage amplitude is higher than the threshold in the first sampling signal is set to a high level, so as to form a first digitized waveform; the signal whose voltage amplitude is lower than the threshold in the second sampling signal is set to a low level, and the signal whose voltage amplitude is higher than the threshold in the second sampling signal is set to a high level, so as to form a second digitized waveform.

[0045] S3: synchronously collect the first rising edge of the first digitized waveform and the second rising edge of the second digitized waveform in the same frame period.

[0046] The frame period represents the sampling period of the image sensor. Typically, the frame period can be set to 500us, that is, the sampling frequency of the image sensor is set to 2kHz.

[0047] In this embodiment, the first rising edge of the first digitized waveform and the second rising edge of the second digitized waveform correspond to the wafer edge or the notch position respectively.

[0048] Optionally, synchronously collecting the first rising edge of the first digitized waveform and the second rising edge of the second digitized waveform in the same frame period includes: responding to the first rising edge of the first channel based on the first edge interrupt, and responding to the second rising edge of the second channel based on the second edge interrupt; wherein the first edge interrupt and the second edge interrupt are processed in parallel. Preferably, in the same frame period, the first edge interrupt and the second edge interrupt only execute an interrupt response once.

[0049] Specifically, the first edge interrupt and the second edge interrupt can be implemented by the soft interrupt of the same single-chip microcomputer, and the first edge interrupt and the second edge interrupt have the same priority. After obtaining the first digitized waveform and the second digitized waveform, the first edge interrupt and the second edge interrupt capture and respond to the rising edge in the first digitized waveform and the second digitized waveform in real time. If either the first edge interrupt or the second edge interrupt detects a rising edge, then in the current frame period, the first edge interrupt and the second edge interrupt simultaneously stop capturing the rising edge until the next frame period arrives.

[0050] Preferably, the response time of the first edge interrupt is less than 1 microsecond, and the response time of the second edge interrupt is less than 1 microsecond.

[0051] S4: Perform real-time filtering processing on the first digitized waveform and the second digitized waveform according to the first rising edge and the second rising edge.

[0052] Specifically, after capturing the previous rising edge, the previous rising edge is quickly responded to, and the digital waveform corresponding to the channel where the previous rising edge is located is filtered and outputted with a continuous high level, and after a delay period, the digital waveform corresponding to the other channel is filtered and outputted with a continuous high level. Thus, the sampling signals of the first channel and the second channel are monitored in real time through parallel interruption, and each other is backed up, and the edge signal corresponding to the edge or notch of the wafer is redundantly captured, and the sampled output waveform is filtered based on the edge signal, so that the semiconductor device filters the positioning sampling signal of the transparent wafer into the waveform characteristics corresponding to the conventional wafer (i.e., non-transparent wafer, such as silicon wafer), realizes the pre-positioning detection of the transparent wafer, solves the problem that the existing transparent wafer light transmission destroys the positioning signal characteristics and timing of the semiconductor measurement machine, resulting in the failure of the pre-positioning analysis, and makes the semiconductor device compatible with the transparent wafer usage scenario. The transformation plan is simple and low-cost, which can improve the use value and market value of the semiconductor device.

[0053] It should be noted that in the pre-positioning detection equipment, positioning detection is performed by changing the duty cycle of the waveform corresponding to the edge or notch of the wafer, and no specific requirements are made on the absolute value of the waveform duty cycle.

[0054] Figure 4 A waveform diagram of a real-time filtering process provided by the first embodiment of the present invention. In this embodiment, the sampling signal S1 of the first channel is output first; Figure 5 This is a waveform diagram of another real-time filtering process provided by the first embodiment of the present invention. In this embodiment, the sampling signal S2 of the second channel is output first.

[0055] See also Figure 4As shown, the four waveforms from top to bottom are as follows: the first waveform CH1 represents the filtered output signal Aout' of the first channel, the second waveform CH2 represents the first digitized waveform Aout of the first channel, the third waveform CH3 represents the first sampling signal S1 of the first channel, and the fourth waveform CH4 represents the exposure trigger signal FX. In this embodiment, the above step S4 includes: when the first rising edge is the previous rising edge, the first digitized waveform Aout in the current frame period is set to a high level based on the first rising edge, and after a preset delay time, the second digitized waveform in the current frame period is set to a high level. Optionally, the preset delay time is established based on the shift clock cycle in a single frame period. Preferably, the preset delay time can be set to adjust the subsequent waveform to a position of half a shift clock cycle interval.

[0056] See also Figure 5 As shown, the four waveforms from top to bottom are as follows: the first waveform CH1 represents the filtered output signal Aout' of the first channel, the second waveform CH2 represents the first digitized waveform Bout of the second channel, the third waveform CH3 represents the second sampling signal S2 of the second channel, and the fourth waveform CH4 represents the filtered output signal Bout' of the second channel. In this embodiment, the above step S4 includes: when the second rising edge is the previous rising edge, the second digitized waveform Bout in the current frame period is set to a high level based on the second rising edge, and after a preset delay time Δt, the first digitized waveform in the current frame period is set to a high level. Optionally, the preset delay time Δt is established based on the shift clock cycle in a single frame period. Preferably, the preset delay time Δt can be set to adjust the subsequent waveform to a position of half a cycle interval of the shift clock.

[0057] Specifically, see Figure 4 and Figure 5As shown, the first edge interrupt responds to the filtering process of the sampling signal S1 of the first channel, and outputs the result Aout' within the response time (for example, 1us), and the code is high-speed and time-constant. Similarly, the second edge interrupt responds to the filtering process of the sampling signal S2 of the second channel, and outputs the result Bout' within the response time (for example, 1us). The first edge interrupt is implemented by the same single-chip microcomputer, using the "AB linkage, first trigger first output" mechanism. In other words, the priority of the first edge interrupt is the same as that of the second edge interrupt. In the first edge interrupt program triggered by the first channel, it responds immediately after the rising edge is identified, and the signal of the first channel is filtered and output Aout'=1, and then after a preset delay time Δt (for example, adjusting the subsequent waveform to the position of half a cycle interval of the shift clock), the signal of the second channel is filtered and output Bout'=1. In the second edge interrupt program triggered by the second channel, it responds immediately after the rising edge is identified, and the signal of the second channel is filtered and output Bout'=1, and then after a preset delay time Δt (for example, the subsequent waveform is adjusted to the position of half a cycle interval of the shift clock), the signal of the first channel is filtered and output Aout'=1. In this way, the real-time problem caused by interrupt blocking is avoided; and after the interrupt blocking and when responding again, the signal that has been set to 1 is repeatedly set to 1, which does not affect the filtering result. The sampling signals of the first channel and the second channel are monitored in real time through parallel interrupts, which serve as backups for each other, redundantly capture the edge signals corresponding to the edge or notch of the wafer, and filter the sampled output waveform based on the edge signal, so that the semiconductor device filters the positioning sampling signal of the transparent wafer into the waveform characteristics corresponding to the conventional wafer (that is, the non-transparent wafer, such as the silicon wafer), so that the modified semiconductor device can realize the pre-positioning detection of the transparent wafer.

[0058] Optionally, Figure 6 A flowchart of another semiconductor device modification method based on real-time filtering provided in Embodiment 1 of the present invention, Figure 3 Based on the illustrated embodiment, a periodic real-time filtering strategy is provided.

[0059] See also Figures 4 to 6 As shown, the semiconductor device modification method based on real-time filtering of the present application specifically includes the following steps:

[0060] S601: dimming the light source to obtain a first sampling signal output by a first channel and a second sampling signal output by a second channel.

[0061] S602: Acquire a first digitized waveform corresponding to the first sampling signal and a second digitized waveform corresponding to the second sampling signal based on threshold adjustment.

[0062] S603: synchronously collecting the first rising edge of the first digitized waveform and the second rising edge of the second digitized waveform in the same frame period.

[0063] S604: Perform real-time filtering processing on the first digitized waveform and the second digitized waveform according to the first rising edge and the second rising edge.

[0064] S605: Clearing the filtered waveform based on the exposure trigger signal, and starting rising edge acquisition of the next frame period based on the exposure trigger signal.

[0065] The exposure trigger signal is a signal that controls the image sensor to start collecting light distribution information.

[0066] Specifically, see Figure 4 and Figure 5 As shown, the exposure trigger signal can be set to be sent every 500 microseconds. After the signal of the first channel is filtered and output Aout'=1, and the signal of the second channel is filtered and output Bout'=1, if the exposure trigger signal is received, the INT0 interrupt program is triggered, and the filtered output Aout' and Bout' are set to low-level signals, and Aout'=0 and Bout'=0 are output synchronously, and the first edge interrupt program and the second edge interrupt program start the rising edge acquisition of the next frame period to realize periodic filtering processing.

[0067] Figure 7 A flowchart of another semiconductor device modification method based on real-time filtering provided in Embodiment 1 of the present invention is provided. Figure 3 Based on the illustrated embodiment, a specific implementation of a threshold adjustment method is illustrated; Figure 8 A schematic diagram of a filtering method based on threshold adjustment provided in Embodiment 1 of the present invention, wherein the first waveform CH1 represents a first digitized waveform or a second digitized waveform; the second waveform CH2 represents a first sampling signal S1 or a second sampling signal S2.

[0068] See also Figure 7 and Figure 8 As shown, the above step S2 includes:

[0069] S201: determining a first threshold based on a wafer edge waveform in a first sampling signal, and performing digitization processing on the first sampling signal based on the first threshold to obtain a first digitized waveform.

[0070] S202: Determine a second threshold based on the wafer edge waveform in the second sampling signal, and perform digitization processing on the second sampling signal based on the second threshold to obtain a second digitized waveform.

[0071] Specifically, see Figure 8As shown, the comparison thresholds of different channels are generated based on the first sampling signal S1 and the second sampling signal S2. For example, the first threshold V can be set based on the fact that the light source is completely blacked out in the frame period, the first sampling signal S1 is in the full amplitude state, and one third of the peak waveform (i.e., black edge effect) formed by total reflection at the edge or notch of the wafer is used as the standard. ref1 , that is, after the first threshold V ref1 After processing, one third of the peak waveform of the first sampling signal S1 generated at the edge or notch of the wafer can be set as a high-level signal; based on the fact that the light source is completely blacked out within the frame period, the second sampling signal S2 is in the full amplitude state, and one third of the peak waveform (i.e., black edge effect) generated by total reflection at the edge or notch of the wafer is used as the basis, the second threshold V ref2 , that is, after the second threshold V ref2 After processing, one third of the peak waveform of the second sampling signal S2 generated at the edge or notch of the wafer can be set to a high-level signal, thereby forming an effective and accurate edge signal.

[0072] Embodiment 2

[0073] Based on the same inventive concept, a second embodiment of the present invention provides a semiconductor device modification device based on real-time filtering, which can be applicable to application scenarios of pre-positioning detection of transparent or non-transparent wafers.

[0074] Fig. 9 A schematic structural diagram of a semiconductor device modification device based on real-time filtering provided in Embodiment 2 of the present invention.

[0075] See also Fig. 9 As shown, the semiconductor device includes a light source 1 and an image sensor 2 arranged in a pixel array. The image sensor 2 is used to collect an image of the wafer to be tested under the illumination of the light source 1. The sampling signals of two adjacent image sensors 2 are output through the first channel 3 and the second channel 4 respectively.

[0076] like Fig. 9 As shown, the semiconductor equipment modification device based on real-time filtering of the present application includes: an optical path adjustment module 101, which is used to adjust the brightness of the light source to obtain a first sampling signal output by the first channel and a second sampling signal output by the second channel; a circuit adjustment module 102, which is used to obtain a first digitized waveform corresponding to the first sampling signal and a second digitized waveform corresponding to the second sampling signal based on a threshold adjustment; an edge acquisition module 103, which is used to synchronously acquire a first rising edge of the first digitized waveform and a second rising edge of the second digitized waveform in the same frame period; and a filtering processing module 104, which is used to perform real-time filtering processing on the first digitized waveform and the second digitized waveform according to the prior rising edge of the first rising edge and the second rising edge.

[0077] Optionally, the filtering processing module 104 is specifically configured as follows: when the first rising edge is the prior rising edge, the first digitized waveform in the current frame period is set to a high level based on the first rising edge, and after a preset delay time, the second digitized waveform in the current frame period is set to a high level; and when the second rising edge is the prior rising edge, the second digitized waveform in the current frame period is set to a high level based on the second rising edge, and after a preset delay time, the first digitized waveform in the current frame period is set to a high level.

[0078] Optionally, the preset delay time is established based on a shift clock period within a single frame period.

[0079] Optionally, the edge acquisition module 103 is specifically configured to: respond to the first rising edge based on the first edge interrupt; respond to the second rising edge based on the second edge interrupt; wherein the first edge interrupt and the second edge interrupt are processed in parallel.

[0080] Optionally, the response time of the first edge interrupt is less than 1 microsecond, and the response time of the second edge interrupt is less than 1 microsecond.

[0081] Optionally, within the same frame period, the first edge interrupt and the second edge interrupt only execute one interrupt response.

[0082] Optionally, the circuit adjustment module 102 is specifically configured to: determine a first threshold based on a wafer edge waveform in a first sampling signal, and digitize the first sampling signal based on the first threshold to obtain a first digitized waveform; and determine a second threshold based on a wafer edge waveform in a second sampling signal, and digitize the second sampling signal based on the second threshold to obtain a second digitized waveform.

[0083] Optionally, the filtering processing module 104 of the present application is further configured to: perform zeroing processing on the filtered waveform based on the exposure trigger signal.

[0084] Optionally, the edge acquisition module 103 is further configured to start rising edge acquisition of the next frame period based on the exposure trigger signal.

[0085] The conductor equipment modification device provided in the embodiment of the present invention can execute the semiconductor equipment modification method provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method, and the same parts will not be repeated.

[0086] Embodiment 3

[0087] Based on the same inventive concept, embodiment three of the present invention provides an electronic device, which includes: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the above-mentioned semiconductor device transformation method based on real-time filtering.

[0088] Fig.10 A schematic diagram of the structure of an electronic device 10 that can be used to implement an embodiment of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0089] like Fig.10 As shown, the electronic device 10 includes at least one processor 11, and a memory connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 to the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 10 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other through a bus 14. The input / output (I / O) interface 15 is also connected to the bus 14.

[0090] A number of components in the electronic device 10 are connected to the I / O interface 15, including: an input unit 16, such as a keyboard, a mouse, etc.; an output unit 17, such as various types of displays, speakers, etc.; a storage unit 18, such as a disk, an optical disk, etc.; and a communication unit 19, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 19 allows the electronic device 10 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0091] The processor 11 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 11 executes the various methods and processes described above, such as the semiconductor device modification method based on real-time filtering.

[0092] In some embodiments, the semiconductor device modification method based on real-time filtering described above may be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 18. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 10 via the ROM 12 and / or the communication unit 19. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of the semiconductor device modification method based on real-time filtering described above may be performed. Alternatively, in other embodiments, the processor 11 may be configured to perform the semiconductor device modification method based on real-time filtering described above in any other appropriate manner (e.g., by means of firmware).

[0093] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0094] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0095] In the context of the present invention, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, device, or equipment. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices, or equipment, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0096] To provide interaction with a user, the systems and techniques described herein may be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or trackball) through which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0097] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0098] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0099] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0100] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor device modification method based on real-time filtering, wherein the semiconductor device comprises a light source and an image sensor arranged in a pixel array, wherein the image sensor is used to collect an image of a wafer to be tested under the illumination of the light source, and sampling signals of two adjacent image sensors are outputted through a first channel and a second channel respectively, wherein: The method comprises: Performing dimming adjustment on the light source to obtain a first sampling signal output by the first channel and a second sampling signal output by the second channel; Acquire a first digitized waveform corresponding to the first sampling signal and a second digitized waveform corresponding to the second sampling signal based on threshold adjustment; Synchronously collecting a first rising edge of the first digitized waveform and a second rising edge of the second digitized waveform within the same frame period; Performing real-time filtering processing on the first digitized waveform and the second digitized waveform according to the first rising edge and the second rising edge; The real-time filtering processing of the first digitized waveform and the second digitized waveform according to the first rising edge of the first rising edge and the second rising edge comprises: after capturing the first rising edge, quickly responding to the first rising edge, filtering the digitized waveform corresponding to the channel where the first rising edge is located and outputting a continuous high level, and filtering the digitized waveform corresponding to another channel and outputting a continuous high level after a preset delay time; The step of obtaining a first digitized waveform corresponding to the first sampling signal and a second digitized waveform corresponding to the second sampling signal based on threshold adjustment includes: Determine a first threshold value based on a wafer edge waveform in the first sampling signal, and perform digitization processing on the first sampling signal based on the first threshold value to obtain a first digitized waveform; A second threshold is determined based on the wafer edge waveform in the second sampling signal, and the second sampling signal is digitized based on the second threshold to obtain a second digitized waveform.

2. The semiconductor device modification method based on real-time filtering according to claim 1, characterized in that: The preset delay time is established based on a shift clock period within a single frame period.

3. The semiconductor device modification method based on real-time filtering according to claim 1, characterized in that: The synchronously collecting the first rising edge of the first digitized waveform and the second rising edge of the second digitized waveform in the same frame period includes: responding to the first rising edge based on a first edge interrupt; responding to the second rising edge based on a second edge interrupt; The first edge interrupt and the second edge interrupt are processed in parallel.

4. The semiconductor device modification method based on real-time filtering according to claim 3 is characterized in that: The response time of the first edge interrupt is less than 1 microsecond, and the response time of the second edge interrupt is less than 1 microsecond.

5. The semiconductor device modification method based on real-time filtering according to claim 3 is characterized in that: In the same frame period, the first edge interrupt and the second edge interrupt only execute one interrupt response.

6. The semiconductor device modification method based on real-time filtering according to claim 1, characterized in that: After performing real-time filtering on the first digitized waveform and the second digitized waveform according to the first rising edge and the second rising edge, the method further includes: Clearing the filtered waveform based on the exposure trigger signal; and / or, The rising edge acquisition of the next frame period is started based on the exposure trigger signal.

7. A semiconductor device modification device based on real-time filtering, wherein the semiconductor device comprises a light source and an image sensor arranged in a pixel array, wherein the image sensor is used to collect an image of a wafer to be tested under the illumination of the light source, and sampling signals of two adjacent image sensors are outputted through a first channel and a second channel respectively, characterized in that: The device comprises: An optical path adjustment module, used for dimming the light source to obtain a first sampling signal output by the first channel and a second sampling signal output by the second channel; A circuit adjustment module, configured to obtain a first digitized waveform corresponding to the first sampling signal and a second digitized waveform corresponding to the second sampling signal based on threshold adjustment; An edge acquisition module, used for synchronously acquiring a first rising edge of the first digitized waveform and a second rising edge of the second digitized waveform in the same frame period; A filtering processing module, configured to perform real-time filtering processing on the first digitized waveform and the second digitized waveform according to a first rising edge of the first rising edge and the second rising edge; The real-time filtering processing of the first digitized waveform and the second digitized waveform according to the first rising edge of the first rising edge and the second rising edge comprises: after capturing the first rising edge, quickly responding to the first rising edge, filtering the digitized waveform corresponding to the channel where the first rising edge is located and outputting a continuous high level, and filtering the digitized waveform corresponding to another channel and outputting a continuous high level after a preset delay time; The circuit adjustment module is configured to: determine a first threshold based on the wafer edge waveform in the first sampling signal, and digitize the first sampling signal based on the first threshold to obtain a first digitized waveform; and determine a second threshold based on the wafer edge waveform in the second sampling signal, and digitize the second sampling signal based on the second threshold to obtain a second digitized waveform.

8. An electronic device, characterized in that: The electronic device comprises: at least one processor; and a memory communicatively connected to the at least one processor; wherein, The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can perform the semiconductor device modification method based on real-time filtering according to any one of claims 1 to 6.

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