Lateral amorphous silicon photonic crystal laser, laser array and preparation method

Abstract

The present invention provides a lateral amorphous silicon photonic crystal laser, a laser array and a preparation method, and relates to the technical field of semiconductor lasers. The lateral amorphous silicon photonic crystal laser comprises: a P-type waveguide structure; an active layer, arranged on the first surface of the P-type waveguide structure; and a first electrode and a second electrode, arranged on the second surface of the P-type waveguide structure, and the first electrode and the second electrode are not in contact with each other, and are used to control the concentration of carriers in the active layer by injecting currents of different magnitudes to achieve regulation of the laser wavelength, and the first surface is opposite to the second surface.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor lasers, and more specifically, to a lateral amorphous silicon photonic crystal laser, a laser array and a preparation method thereof. Background Art

[0002] With the rapid development of technologies such as cloud computing, artificial intelligence, and the Internet of Things, the data transmission rate and capacity requirements of data centers are showing an exponential growth trend. In order to meet this growing demand, photonic integrated circuit technology, especially wavelength division multiplexing (WDM) and dense wavelength division multiplexing (DWDM) systems, has become a key technology for realizing high-bandwidth density optical input / output (I / O) links. These systems greatly improve the capacity and efficiency of communication systems by transmitting multiple optical signals of different wavelengths simultaneously in a single optical fiber.

[0003] As a core component of optical I / O technology, multi-wavelength laser array (MLA) chips can generate multiple independent laser outputs of different wavelengths on a single chip. This technology can not only significantly improve the performance and efficiency of the system, but also provide good bandwidth scalability. DFB (distributed feedback) semiconductor laser arrays have become one of the ideal light sources for MLA due to their compact structure, good mode stability, high output power at each wavelength, and easy monolithic integration.

[0004] Although DFB semiconductor laser arrays have many advantages, they still face challenges such as complex manufacturing processes, high production costs, and difficulty in accurately controlling wavelength spacing. Summary of the invention

[0005] In view of this, the present invention provides a lateral amorphous silicon photonic crystal laser, a laser array and a preparation method.

[0006] The first aspect of the present invention provides a lateral amorphous silicon photonic crystal laser, comprising: a P-type waveguide structure; an active layer, arranged on a first surface of the P-type waveguide structure; and a first electrode and a second electrode, arranged on a second surface of the P-type waveguide structure and the first electrode and the second electrode are not in contact with each other, and are used to control the concentration of carriers in the active layer by injecting currents of different sizes to achieve regulation of the laser wavelength, and the first surface is opposite to the second surface.

[0007] According to an embodiment of the present invention, a P-type waveguide structure includes a P-type waveguide and a ridge waveguide, the ridge waveguide is arranged on the P-type waveguide; the active layer is arranged on the surface of the P-type waveguide away from the ridge waveguide; the first electrode and the second electrode are arranged on the surface of the ridge waveguide away from the P-type waveguide.

[0008] According to an embodiment of the present invention, the lateral amorphous silicon photonic crystal laser further includes: an amorphous silicon photonic crystal, which is arranged on the surface of the P-type waveguide and is used to couple with the evanescent field of the ridge waveguide to output laser light.

[0009] According to an embodiment of the present invention, the lateral amorphous silicon photonic crystal laser further includes: a silicon oxide layer, which is arranged between the ridge waveguide and the first electrode and the second electrode, and covers the ridge waveguide, the area on the second surface of the P-type waveguide where the ridge waveguide is not arranged, and the amorphous silicon photonic crystal; wherein the first area of ​​the silicon oxide layer between the ridge waveguide and the first electrode is etched to form a first injection current window, and the second area of ​​the silicon oxide layer between the ridge waveguide and the second electrode is etched to form a second injection current window.

[0010] According to an embodiment of the present invention, the lateral amorphous silicon photonic crystal laser further includes: an N-type waveguide, an N-type substrate and an N-side electrode which are sequentially stacked with an active layer away from the surface of the P-type waveguide.

[0011] According to an embodiment of the present invention, the sampling grating period of the amorphous silicon photonic crystal is:

[0012] , where λ is the lasing wavelength of the photonic crystal laser, n eff is the effective refractive index, and Λ0 is the period of the seed grating.

[0013] The second aspect of the present invention provides a lateral amorphous silicon photonic crystal laser array, including: a plurality of lateral amorphous silicon photonic crystal lasers, the plurality of lateral amorphous silicon photonic crystal lasers are arranged in a parallel array; wherein each lateral amorphous silicon photonic crystal laser outputs a different laser wavelength according to different preset sampling grating periods; and by injecting different current ratios into the first electrode and the second electrode in each lateral amorphous silicon photonic crystal laser, the laser wavelength output by the lateral amorphous silicon photonic crystal laser array meets the preset standard wavelength interval.

[0014] The third aspect of the present invention provides a method for preparing a lateral amorphous silicon photonic crystal laser, comprising: preparing a first electrode and a second electrode on a P-type waveguide structure; wherein an active layer is arranged on a first surface of the P-type waveguide; and the first electrode and the second electrode are arranged on a second surface of the P-type waveguide structure and the first electrode and the second electrode are not in contact with each other, and are used to control the concentration of carriers in the active layer by injecting currents of different sizes to achieve regulation of the laser wavelength.

[0015] According to an embodiment of the present invention, a method for preparing a lateral amorphous silicon photonic crystal laser includes: photolithographically etching two electrical isolation structures on the second surface of a P-type waveguide structure; photolithographically etching a P-type waveguide and a ridge waveguide on the P-type waveguide structure, and locating the two electrical isolation structures on the ridge waveguide; growing a metal electrode material on the surface of the ridge waveguide away from the P-type waveguide, and obtaining a first electrode and a second electrode through a patterning process and a photolithographic process, and isolating them through the electrical isolation structure.

[0016] According to an embodiment of the present invention, a metal electrode material is grown on the surface of a ridge waveguide away from a P-type waveguide, and after patterning, photolithography and etching, a first electrode and a second electrode are obtained and isolated by an electrical isolation structure. The method also includes: growing a layer of amorphous silicon dielectric film on the surface of the P-type waveguide, and preparing an amorphous silicon photonic crystal according to a preset sampling grating period; growing a layer of silicon oxide on the second surface of the P-type waveguide structure having the amorphous silicon photonic crystal, and covering the area on the second surface of the P-type waveguide where no ridge waveguide is set, the ridge waveguide and the amorphous silicon photonic crystal; etching is performed at the window of the first electrode preset on the ridge waveguide to obtain a first injection current window; etching is performed at the window of the second electrode preset on the ridge waveguide to obtain a second injection current window; a metal electrode material is grown on the surface of the ridge waveguide away from the P-type waveguide, and after patterning, photolithography and etching, a first electrode and a second electrode are obtained and isolated by an electrical isolation structure, wherein the first electrode covers the first injection current window, and the second electrode covers the second injection current window.

[0017] According to an embodiment of the present invention, a first electrode and a second electrode are provided on a P-type waveguide structure, so that the wavelength of the laser can be controlled. In a laser array, by injecting different current ratios into the first electrode and the second electrode in each laser, the output wavelength of the laser array meets the standard wavelength interval.

[0018] According to the embodiment of the present invention, by providing longitudinally distributed amorphous silicon photonic crystals on both sides of the ridge waveguide, the evanescent field of the ridge waveguide can be coupled to achieve stable single longitudinal mode laser output.

[0019] According to the embodiments of the present invention, the designed lateral amorphous silicon photonic crystal laser array has high mode stability, precise wavelength spacing and low loss and is suitable for monolithic integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and other objects, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0021] Figure 1 A schematic diagram of the structure of a lateral amorphous silicon photonic crystal laser according to an embodiment of the present invention is shown;

[0022] Figure 2 A partial cross-sectional view of a lateral amorphous silicon photonic crystal laser according to an embodiment of the present invention is schematically shown;

[0023] Figure 3 A schematic diagram of an equivalent π phase-shift photonic crystal structure according to an embodiment of the present invention is shown;

[0024] Figure 4 The structure diagram of the lateral amorphous silicon photonic crystal laser array according to an embodiment of the present invention is schematically shown;

[0025] Figure 5 A schematic diagram of a spectrum of a 16-channel lateral amorphous silicon photonic crystal laser array according to an embodiment of the present invention is shown;

[0026] Figure 6 A graph schematically shows the output power of a 16-channel lateral amorphous silicon photonic crystal laser array according to an embodiment of the present invention as a function of the injected current;

[0027] Explanation of the accompanying drawings: 1. N-side electrode; 2. N-type substrate; 3. N-type waveguide; 4. Active layer; 5. P-type waveguide structure; 51. P-type waveguide; 52. Ridge waveguide; 6. Silicon oxide layer; 7. Amorphous silicon photonic crystal; 8. First electrode; 81. First electrode I; 82. First electrode II; 9. Electrical isolation structure I; 10. Second electrode; 11 Electrical isolation structure II. DETAILED DESCRIPTION

[0028] Below, embodiments of the present invention will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present invention. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of embodiments of the present invention. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of concepts of the present invention.

[0029] The terms used herein are only for describing specific embodiments and are not intended to limit the present invention. The terms "comprise", "include", etc. used herein indicate the existence of features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0030] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0031] When using expressions such as "at least one of A, B, and C, etc.", they should generally be interpreted according to the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0032] Figure 1 The structure diagram of a lateral amorphous silicon photonic crystal laser according to an embodiment of the present invention is schematically shown.

[0033] Figure 2 A partial cross-sectional view of a lateral amorphous silicon photonic crystal laser according to an embodiment of the present invention is schematically shown.

[0034] like Figure 1 As shown, the first aspect of the present invention provides a lateral amorphous silicon photonic crystal laser, comprising: a P-type waveguide structure 5; an active layer 4, arranged on the first surface of the P-type waveguide structure 5; and a first electrode 8 and a second electrode 10, arranged on the second surface of the P-type waveguide structure 5 and the first electrode and the second electrode are not in contact with each other, and are used to control the concentration of carriers in the active layer 4 by injecting currents of different sizes to achieve regulation of the laser wavelength, and the first surface is opposite to the second surface.

[0035] In the embodiment of the present invention, the first electrode and the second electrode are designed on the P-type waveguide structure, and currents of different magnitudes are injected into the first electrode and the second electrode to act on the active layer, thereby achieving fine tuning of the laser wavelength.

[0036] According to an embodiment of the present invention, the first electrode 8 includes a first electrode I 81 and a first electrode II 82 , and the length ratio of the first electrode I 81 to the first electrode II 82 is 2:1.

[0037] According to an embodiment of the present invention, a P-type waveguide structure 5 includes: a P-type waveguide 51 and a ridge waveguide 52, wherein the ridge waveguide 52 is arranged on the P-type waveguide 51; an active layer is arranged on a surface of the P-type waveguide away from the ridge waveguide; and a first electrode 8 and a second electrode 10 are arranged on a surface of the ridge waveguide 52 away from the P-type waveguide.

[0038] like Figure 2 As shown, according to an embodiment of the present invention, the lateral amorphous silicon photonic crystal laser further includes: an amorphous silicon photonic crystal 7, which is arranged on the surface of the P-type waveguide 51 and is used to couple with the evanescent field of the ridge waveguide 52 to output laser.

[0039] In an embodiment of the present invention, based on the coupled mode perturbation theory, a longitudinally distributed passive amorphous silicon (α-Si) photonic crystal coupling structure is designed on the side wall of the ridge waveguide. The longitudinal mode is regulated by the perturbation effect of the passive amorphous silicon photonic crystal on the evanescent field of the guided mode, thereby achieving stable single longitudinal mode laser output.

[0040] According to an embodiment of the present invention, the lateral amorphous silicon photonic crystal laser also includes: a silicon oxide layer 6, which is arranged between the ridge waveguide 52 and the first electrode 8 and the second electrode 10, and covers the ridge waveguide 52, the area on the second surface of the P-type waveguide 51 where the ridge waveguide 52 is not arranged, and the amorphous silicon photonic crystal 7; wherein the first area of ​​the silicon oxide layer 6 between the ridge waveguide 52 and the first electrode 8 is etched to form a first injection current window, and the second area of ​​the silicon oxide layer 6 between the ridge waveguide 52 and the second electrode 10 is etched to form a second injection current window.

[0041] According to an embodiment of the present invention, the lateral amorphous silicon photonic crystal laser further includes: on the other side of the active layer 4, an N-type waveguide 3, an N-type substrate 2 and an N-side electrode 1 are sequentially stacked and arranged with the active layer away from the P-type waveguide surface.

[0042] According to the embodiment of the present invention, the lateral amorphous silicon photonic crystal laser is applicable to all semiconductor laser epitaxial structures, including large optical cavity epitaxy and photonic crystal epitaxy.

[0043] According to an embodiment of the present invention, the N-type substrate, the N-type waveguide, the active layer and the P-type waveguide structure are all made of semiconductor materials, such as a II-VI group system, a III-V group system and the like.

[0044] Figure 3 The schematic diagram of the equivalent π phase-shift photonic crystal structure according to an embodiment of the present invention is shown schematically.

[0045] According to an embodiment of the present invention, the sampling grating period of the amorphous silicon photonic crystal is:

[0046] ,

[0047] Where λ is the lasing wavelength of the photonic crystal laser, n eff is the effective refractive index of the mode and Λ0 is the period of the seed grating.

[0048] In the embodiment of the present invention, by adjusting the sampling grating period of the lateral amorphous silicon photonic crystal, a stable single longitudinal mode laser near the corresponding wavelength can be obtained.

[0049] like Figure 3As shown in the figure, it is a schematic diagram of the equivalent π phase-shift photonic crystal structure, where the Z direction is along the longitudinal direction of the laser; P is the sampling grating period, different sampling grating periods correspond to different lasing wavelengths, Λ0 is the period of the seed grating, ∆Z is the equivalent π phase shift, and an equivalent π phase shift is added in the middle of the photonic crystal structure. The length of the phase shift region is half of the sampling grating period. The introduction of the phase shift region causes a change in phase, resulting in a transmission peak between the original two degenerate modes, with a relatively lower threshold and easier lasing, and has good single-mode characteristics.

[0050] The second aspect of the present invention provides a lateral amorphous silicon photonic crystal laser array, including: a plurality of lateral amorphous silicon photonic crystal lasers, the plurality of lateral amorphous silicon photonic crystal lasers are arranged in a parallel array; wherein each lateral amorphous silicon photonic crystal laser outputs a different laser wavelength according to different preset sampling grating periods; and by injecting different current ratios into the first electrode and the second electrode in each lateral amorphous silicon photonic crystal laser, the laser wavelength output by the lateral amorphous silicon photonic crystal laser array meets the preset standard wavelength interval.

[0051] In the embodiment of the present invention, amorphous silicon (α-Si) material with low optical loss is used as the photonic crystal structure, which can effectively suppress the diffusion of lateral carriers, improve the injection efficiency of carriers, and effectively reduce the threshold current of the laser array.

[0052] At the same time, by adjusting the sampling grating period of the photonic crystal in each laser, a stable single longitudinal mode laser near the corresponding wavelength can be obtained, thereby achieving full coverage of the communication band wavelength (1260nm-1675nm, including O-band, E-band, S-band, C-band, L-band and U-band), and the laser wavelength output by each laser is different.

[0053] A first electrode and a second electrode structure are designed. By injecting different current ratios into the electrode structure of each laser in the laser array and fine-tuning the laser emission wavelength, a multi-wavelength laser array with more precise wavelength spacing and better single longitudinal mode performance can be obtained.

[0054] According to an embodiment of the present invention, the output wavelengths of two adjacent lasers in a lateral amorphous silicon photonic crystal laser array meet the standard wavelength interval of the International Telecommunication Union Telecommunication Standardization Sector (ITU-T), such as 0.4nm, 0.8nm or 1.6nm, etc. The wavelength interval is uniform and the wavelength deviation is within ±0.16nm.

[0055] According to an embodiment of the present invention, a lateral amorphous silicon photonic crystal laser array can obtain high mode stability and precise wavelength spacing, and can be widely used in the fields of optical communications, lidar, co-packaged optical interconnection, emerging artificial intelligence, machine learning systems, and high-performance optical computing.

[0056] The third aspect of the present invention provides a method for preparing a lateral amorphous silicon photonic crystal laser, comprising: preparing a first electrode and a second electrode on a P-type waveguide structure; wherein an active layer is arranged on a first surface of the P-type waveguide; and the first electrode and the second electrode are arranged on a second surface of the P-type waveguide structure and the first electrode and the second electrode are not in contact with each other, and are used to control the concentration of carriers in the active layer by injecting currents of different sizes to achieve regulation of the laser wavelength, and the first surface is opposite to the second surface.

[0057] According to an embodiment of the present invention, a method for preparing a lateral amorphous silicon photonic crystal laser includes: photolithographically etching two electrical isolation structures (including electrical isolation grooves 9 and electrical isolation grooves 11) on the second surface of a P-type waveguide structure; photolithographically etching a P-type waveguide and a ridge waveguide on the P-type waveguide structure, and locating the two electrical isolation structures on the ridge waveguide; growing a metal electrode material on the surface of the ridge waveguide away from the P-type waveguide, and obtaining a first electrode and a second electrode through patterning and photolithography and etching, and isolating them through the electrical isolation structure.

[0058] According to an embodiment of the present invention, a metal electrode material is grown on the surface of a ridge waveguide away from a P-type waveguide, and after patterning, photolithography and etching, a first electrode and a second electrode are obtained and isolated by an electrical isolation structure. The method also includes: growing a layer of amorphous silicon dielectric film on the surface of the P-type waveguide, and preparing an amorphous silicon photonic crystal according to a preset sampling grating period; growing a layer of silicon oxide on the second surface of the P-type waveguide structure having the amorphous silicon photonic crystal, and covering the area on the second surface of the P-type waveguide where no ridge waveguide is set, the ridge waveguide and the amorphous silicon photonic crystal; etching is performed at the window of the first electrode preset on the ridge waveguide to obtain a first injection current window; etching is performed at the window of the second electrode preset on the ridge waveguide to obtain a second injection current window; a metal electrode material is grown on the surface of the ridge waveguide away from the P-type waveguide, and after patterning, photolithography and etching, a first electrode and a second electrode are obtained and isolated by an electrical isolation structure, wherein the first electrode covers the first injection current window, and the second electrode covers the second injection current window.

[0059] One embodiment of the present invention provides a method for preparing a lateral amorphous silicon photonic crystal laser, comprising:

[0060] Step 1: Epitaxial growth is performed on an N-type InP substrate to sequentially grow a 0.93μm thick N-type InP waveguide, a 0.2μm thick multiple quantum well (MQWs) AlGaInAs active layer, and a 1.98μm thick P-type InP waveguide structure.

[0061] Step 2: Etching is performed on the P-type InP waveguide structure to prepare two electrical isolation structures, wherein the spacing between the two electrical isolation structures is 333 μm, and the length×width×depth of the electrical isolation structure is 10 μm×3 μm×(400nm-600nm).

[0062] Step 3: Photolithographically etching a P-type InP waveguide and a P-type InP ridge waveguide with a width × height of 3 μm × 1.7 μm on the P-type InP waveguide structure, and locating two electrical isolation structures on the P-type InP ridge waveguide;

[0063] Step 4: Grow a 200nm thick amorphous silicon dielectric film on the surface of the P-type InP waveguide, and prepare amorphous silicon photonic crystals using electron beam lithography (EBL) and inductively coupled plasma (ICP) etching technology according to the preset sampling grating period.

[0064] Step 5: Use plasma enhanced chemical vapor deposition (PECVD) equipment to grow a layer of silicon oxide with a thickness of 200nm-300nm as an electrical isolation layer on the P-type InP waveguide structure with amorphous silicon photonic crystal, and cover the second surface of the P-type InP waveguide structure and the amorphous silicon photonic crystal.

[0065] Step six: Open three injection current windows through photolithography and etching on the two P-side first electrode windows and the P-side second electrode window preset on the P-type InP ridge waveguide to inject current into the active layer, wherein the width of the injection current window is smaller than the width of the P-type InP ridge waveguide, and the injection current window exposes the P-type InP ridge waveguide underneath.

[0066] Step seven: grow the metal electrode material Ti / Au on the surface of the ridge waveguide away from the P-type waveguide, and after patterning, photolithography and etching away the metal electrode material at the two electrical isolation structures to obtain two P-side first electrodes with a length × width × height of 667μm × 3μm × 0.4μm and a P-side second electrode with a length × width × height of 333μm × 3μm × 0.4μm, wherein the P-side second electrode is located between the two P-side first electrodes and is isolated from the two P-side first electrodes by two electrical isolation structures, and the P-side second electrode and the two P-side first electrodes respectively cover an injection current window.

[0067] Step 8: The N-type InP substrate is polished and thinned to 130 μm, and a 0.4 μm N-side electrode metal AuGeNi / Au is grown on the other side of the N-type InP substrate as a negative electrode.

[0068] Step 9: The product prepared in step 7 is subjected to a rapid thermal annealing (RTA) process to rapidly raise the temperature to 395°C, the melting point of the InP alloy, and maintain the temperature for about 50 seconds, and then rapidly cool down to form an alloy phase at the interface between the semiconductor material and the metal, and to form good ohmic contacts between the N-side metal electrode and the P-side metal electrode, respectively, to reduce the series resistance of the device.

[0069] Step 10: The two cavity surfaces of the lateral amorphous silicon photonic crystal laser are coated by ion beam assisted enhanced electron beam evaporation, one cavity surface is an anti-reflection film (reflectivity <1%) and the other cavity surface is a high reflectivity film (reflectivity >99%).

[0070] Step 11: Package the prepared lateral amorphous silicon photonic crystal laser on a heat sink (C-mount) with the P-side metal electrode facing upward.

[0071] In an embodiment of the present invention, in step 2, photolithography and etching are performed to obtain two electrically isolated grooves, mainly etching away a 200 nm high-doped layer on the surface of the P-type waveguide structure; in step 6, silicon oxide is photolithographically etched away to form an electrode window, so that the injected current is concentrated in the active layer below the waveguide and ensures that there is no current leakage elsewhere; in step 7, the metal electrode material is Ti / Au, wherein Ti is a metal that forms an ohmic contact with the InGaAs surface and can also increase the adhesion between the metal and the semiconductor material, and Au is the electrode metal with the best conductivity; in step 10, ion beam assisted enhanced electron beam evaporation is used for coating in order to further improve the output power and slope efficiency of the semiconductor laser, and to dissociate the multi-wavelength semiconductor laser wafer into bars with different cavity lengths.

[0072] Figure 4 The structure diagram of a lateral amorphous silicon photonic crystal laser array according to an embodiment of the present invention is schematically shown.

[0073] Figure 5 The diagram schematically shows a spectrum diagram of a 16-channel lateral amorphous silicon photonic crystal laser array according to an embodiment of the present invention.

[0074] One embodiment of the present invention provides a lateral amorphous silicon photonic crystal laser array, wherein 16 lasers prepared by the preparation method of the lateral amorphous silicon photonic crystal laser in the above embodiment are arranged in an array in parallel, such as Figure 3 shown.

[0075] Through the provided electrode window, current is injected into the first electrode and the second electrode to form a double-electrode structure, wherein the currents injected into the two first electrodes are of the same magnitude.

[0076] In an embodiment of the present invention, compared with the traditional technical solution of constructing a grating near the active area using electron beam exposure and then performing secondary epitaxy, the preparation method of the present invention is relatively simple, low-cost and solves the problem of inaccurate control of wavelength spacing.

[0077] like Figure 5 As shown, the output wavelength is L band, and there are 16 wavelengths with a wavelength interval of 0.8nm. By changing the current ratio injected into the first electrode and the second electrode, the lasing wavelength of each channel laser in the laser array meets the wavelength interval of 0.8nm, and a multi-wavelength laser array with more precise wavelength interval and better single longitudinal mode performance is obtained. The emission wavelengths of the 16 channels are: 1566.18nm, 1566.98nm, 1567.77nm, 1568.51nm, 1569.37nm, 1570.18nm, 1570.97nm, 1571.78nm, 1572.64nm, 1573.37nm, 1574.18nm, 1574.97nm, 1575.77nm, 1576.56nm, 1577.57nm, 1578.16nm, and the corresponding sampling periods are 11522nm, 11806nm, 12104nm, 12417nm, 12746nm, 13093nm, 13459nm, 13845nm, 14254nm, 14687nm, 15147nm, 15637nm , 16158nm, 16715nm, 17310nm, 17950nm; for this laser array, when the total current is 180mA, the specific 16 current ratios of the first electrode and the second electrode are: 150mA:30mA, 10mA:170mA, 176mA:4mA, 179mA:1mA, 151mA:29mA, 177mA:3mA, 179mA:1mA, 154mA:26mA, 124mA:56mA, 56mA:124mA, 31mA:149mA, 178mA:2mA, 36mA:144mA, 84mA:96mA, 91mA:89mA, 135mA:45mA, and all side-mode suppression ratios (Side-ModeSuppression Ratio, SMSR) are all greater than 40dB.

[0078] Figure 6 The graph schematically shows the output power of a 16-channel lateral amorphous silicon photonic crystal laser array according to an embodiment of the present invention as a function of the injected current.

[0079] like Figure 6 As shown, when the threshold current is around 20mA, the output power at 200mA is greater than 35mW.

[0080] The embodiments of the present invention are described above. However, these embodiments are only for the purpose of illustration, and are not intended to limit the scope of the present invention. Although each embodiment is described above, it does not mean that the measures in each embodiment cannot be used in combination. The scope of the present invention is defined by the attached claims and their equivalents. Without departing from the scope of the present invention, those skilled in the art may make various substitutions and modifications, which should all fall within the scope of the present invention.

Claims

1. A lateral amorphous silicon photonic crystal laser, characterized in that: include: P-type waveguide structure; An active layer, arranged on the first surface of the P-type waveguide structure; as well as A first electrode and a second electrode are arranged on the second surface of the P-type waveguide structure and the first electrode and the second electrode do not contact each other, and are used to control the concentration of carriers in the active layer by injecting currents of different magnitudes to achieve regulation of the laser wavelength, and the first surface is opposite to the second surface; Wherein, the P-type waveguide structure comprises: a P-type waveguide and a ridge waveguide, wherein the ridge waveguide is arranged on the P-type waveguide; An amorphous silicon photonic crystal, arranged on the surface of the P-type waveguide, and used for coupling with the evanescent field of the ridge waveguide to output the laser; The first electrode and the second electrode are arranged on the surface of the ridge waveguide away from the P-type waveguide; wherein the number of the first electrodes is two, the second electrode is located between the two first electrodes, the currents injected into the two first electrodes are the same, the injected current is concentrated in the active layer below the waveguide and ensures that there is no current leakage in other places; The method further comprises: sequentially stacking an N-type waveguide, an N-type substrate and an N-surface electrode, which are arranged so that the active layer is away from the surface of the P-type waveguide.

2. The lateral amorphous silicon photonic crystal laser according to claim 1, characterized in that: The active layer is disposed on a surface of the P-type waveguide away from the ridge waveguide.

3. The lateral amorphous silicon photonic crystal laser according to claim 1, characterized in that: Also includes: a silicon oxide layer, disposed between the ridge waveguide and the first electrode, the second electrode, and covering the ridge waveguide, a region on the second surface of the P-type waveguide where the ridge waveguide is not disposed, and the amorphous silicon photonic crystal; The first region of the silicon oxide layer between the ridge waveguide and the first electrode is etched to form a first injection current window, and the second region of the silicon oxide layer between the ridge waveguide and the second electrode is etched to form a second injection current window.

4. The lateral amorphous silicon photonic crystal laser according to claim 1, characterized in that: The sampling grating period of the amorphous silicon photonic crystal is: ， Where λ is the lasing wavelength of the photonic crystal laser, n eff is the effective refractive index, and Λ0 is the period of the seed grating.

5. A lateral amorphous silicon photonic crystal laser array, characterized in that: include: A plurality of lateral amorphous silicon photonic crystal lasers as claimed in any one of claims 1 to 4, wherein the plurality of lateral amorphous silicon photonic crystal lasers are arranged in an array in a parallel manner; Wherein, each of the lateral amorphous silicon photonic crystal lasers outputs different laser wavelengths according to different preset sampling grating periods; And by injecting different current ratios into the first electrode and the second electrode in each of the lateral amorphous silicon photonic crystal lasers, the laser wavelength output by the lateral amorphous silicon photonic crystal laser array meets the preset standard wavelength interval.

6. A method for preparing a lateral amorphous silicon photonic crystal laser, characterized in that: include: preparing a first electrode and a second electrode on the P-type waveguide structure; Wherein, the active layer is arranged on the first surface of the P-type waveguide; and A first electrode and a second electrode are arranged on the second surface of the P-type waveguide structure and the first electrode and the second electrode do not contact each other, and are used to control the concentration of carriers in the active layer by injecting currents of different magnitudes to achieve regulation of the laser wavelength, and the first surface is opposite to the second surface; Wherein, the P-type waveguide structure comprises: a P-type waveguide and a ridge waveguide, wherein the ridge waveguide is arranged on the P-type waveguide; An amorphous silicon photonic crystal, arranged on the surface of the P-type waveguide, and used for coupling with the evanescent field of the ridge waveguide to output the laser; The first electrode and the second electrode are arranged on a surface of the ridge waveguide away from the P-type waveguide; There are two first electrodes, the second electrode is located between the two first electrodes, the currents injected into the two first electrodes are equal in magnitude, the injected current is concentrated in the active layer below the waveguide and ensures that there is no current leakage in other places; The method further comprises: sequentially stacking an N-type waveguide, an N-type substrate and an N-surface electrode, which are arranged so that the active layer is away from the surface of the P-type waveguide.

7. The method for preparing a lateral amorphous silicon photonic crystal laser according to claim 6, characterized in that: include: Photolithographically etching two electrical isolation structures on the second surface of the P-type waveguide structure; Photolithographically etching a P-type waveguide and a ridge waveguide on the P-type waveguide structure, and locating the two electrical isolation structures on the ridge waveguide; A metal electrode material is grown on the surface of the ridge waveguide away from the P-type waveguide, and after patterning, photolithography and etching, the first electrode and the second electrode are obtained and isolated by the electrical isolation structure.

8. The method for preparing a lateral amorphous silicon photonic crystal laser according to claim 7, characterized in that: A metal electrode material is grown on the surface of the ridge waveguide away from the P-type waveguide, and the first electrode and the second electrode are obtained through patterning, photolithography and etching, and isolated through the electrical isolation structure, further comprising: Growing a layer of amorphous silicon dielectric film on the surface of the P-type waveguide, and preparing an amorphous silicon photonic crystal according to a preset sampling grating period; Growing a layer of silicon oxide on the second surface of the P-type waveguide structure having the amorphous silicon photonic crystal, and covering the area on the second surface of the P-type waveguide where the ridge waveguide is not provided, the ridge waveguide and the amorphous silicon photonic crystal; Performing etching processing at a window of the first electrode preset on the ridge waveguide to obtain a first injection current window; Performing etching processing at a window of the second electrode preset on the ridge waveguide to obtain a second injection current window; The metal electrode material is grown on the surface of the ridge waveguide away from the P-type waveguide, and is patterned, photolithographically and etched to obtain the first electrode and the second electrode, which are isolated by the electrical isolation structure, wherein the first electrode covers the first injection current window, and the second electrode covers the second injection current window.

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