Electro-optical modulation components and high-energy microwave transmission systems used in microwave systems

Abstract

The present specification discloses an electro-optical modulation component and a high-energy microwave emission system applied to a microwave system, and relates to the field of microwave technology. Among them, the first surface, the second surface, the first proximal end face, and the first distal end face of the first modulation crystal are respectively opposite. The second modulation crystal is similar, and the third surface of the second modulation crystal is perpendicular to the first surface. A microwave signal generator, a microwave connector, a traveling wave electrode plated on the first surface and the second surface, a microwave connector, a connecting line, a microwave connector, a traveling wave electrode plated on the third surface and the third surface, a microwave connector, and a matching resistor are arranged in sequence along the microwave path. The first distal end face is opposite to the second proximal end face, so that the high-energy pulse laser can pass through the first modulation crystal and the second modulation crystal, and is modulated into a modulated pulse cluster laser in the process. It can be seen that the electro-optical modulation component can directly modulate the high-energy pulse laser, and the laser can be amplified before modulation.

Description

Technical Field

[0001] The present invention relates to the field of microwave technology, and in particular to an electro-optical modulation component and a high-energy microwave transmission system applied to a microwave system. Background Art

[0002] In microwave systems, lasers are usually required to provide light sources for photoconductive switches. The laser output by the laser often needs to be a pulse cluster laser with adjustable timing, and each sub-pulse in the pulse cluster has a certain power, so that when the laser irradiates other components of the photoconductive switch, each sub-pulse has enough energy to trigger a certain scale of photoelectric effect.

[0003] In the prior art, it is usually preferred to output pulsed laser through a laser, and then modulate the pulsed laser into a pulse cluster laser through electro-optical modulation technology, and make the timing of the pulse cluster laser adjustable, and finally amplify the pulse cluster laser through an optical fiber amplifier so that each sub-pulse has a certain power. The patent application document named High Energy Pulse Cluster Laser as Signal Source of Photoconductive Device for Microwave System and Publication No. 110265855A discloses the relevant technology.

[0004] However, this type of microwave system has a complex structure, is huge in size, and is difficult to implement. In addition, when tunable pulse cluster lasers are amplified through optical fiber amplifiers, they not only face severe distortion of the pulse envelope caused by the gain saturation effect, which easily causes distortion, but are also subject to nonlinear effects including self-phase modulation, stimulated Brillouin scattering, stimulated Raman scattering, etc. The line width of the laser wavelength is easily broadened, which limits the amplification of the laser energy and cannot complete the modulation of higher-power and higher-energy lasers.

[0005] In response to the above problems, this specification provides an electro-optical modulation component applied to a microwave system and a high-energy microwave transmission system, wherein the electro-optical modulation component applied to the microwave system can directly electro-optically modulate a high-energy pulse laser with relatively high power. Summary of the invention

[0006] The present specification provides an electro-optical modulation component and a high-energy microwave transmission system applied to a microwave system, so as to at least partially solve the above-mentioned problems existing in the prior art.

[0007] This manual adopts the following technical solutions:

[0008] This specification provides an electro-optical modulation component for a microwave system, including a first modulation crystal, a second modulation crystal, a microwave signal generator, a traveling wave electrode, a connecting line, a matching resistor, and a plurality of microwave connectors:

[0009] The first modulating crystal is configured with a first surface, a second surface, a first proximal end face and a first distal end face which are arranged oppositely; the second modulating crystal is configured with a third surface, a fourth surface, a second proximal end face and a second distal end face which are arranged oppositely; and the first surface and the third surface are perpendicular to each other;

[0010] The first distal end surface is arranged opposite to the second proximal end surface, so that the high-energy pulse laser can sequentially pass through the first proximal end surface, the first distal end surface, the second proximal end surface and the second distal end surface;

[0011] The traveling wave electrode is plated on the outside of the first surface, the second surface, the third surface and the fourth surface; the proximal end of the traveling wave electrode plated on the outside of the first surface is connected to the microwave signal generator through the microwave connector, and the distal end is connected to the proximal end of the traveling wave electrode plated on the outside of the third surface through the microwave connector, the connecting line and the microwave connector, and the distal end of the traveling wave electrode plated on the outside of the third surface is connected to the matching resistor through the microwave connector; the microwave signal generator is used to output target timing microwaves, so that the high-energy pulse laser is modulated into a modulated pulse cluster laser in the process of passing through the first modulation crystal and the second modulation crystal.

[0012] Preferably, the electro-optic modulation component applied to the microwave system further comprises at least one transition electrode;

[0013] The transition electrode is arranged between the microwave connector and the traveling wave electrode, and only one transition electrode is arranged between any group of microwave connectors and the traveling wave electrode;

[0014] The at least one transition electrode is used to adjust the phase of the target time-sequence microwave transmitted to the traveling wave electrode.

[0015] Preferably, the traveling wave electrode comprises a first coating layer and a second coating layer which are closely attached to each other;

[0016] The first plating layer is metal gold, and the first plating layer is in close contact with the microwave connector;

[0017] The second coating layer is made of metal titanium, and the second coating layer is in close contact with the traveling wave electrode.

[0018] Preferably, the outer surface of the connecting wire is covered with a shielding material.

[0019] On the other hand, the present specification provides a photoconductive switch laser source applied to a microwave system, comprising the electro-optic modulation component applied to a microwave system provided in the above aspect, and a laser component.

[0020] Preferably, the laser assembly comprises a pulse seed source, a laser amplifier and a frequency multiplier which are sequentially arranged along the optical path;

[0021] The pulse seed source includes a seed source, a Q-switching component and a temperature control unit, and is used to output laser pulses;

[0022] The laser amplifier is used to amplify the laser pulse into the high-energy pulse laser, and the power of the high-energy pulse laser is greater than a preset power threshold;

[0023] The frequency doubler can double the frequency of the high-energy pulse laser, and the frequency doubler is adapted to the structure of the Q-switching component, so that the wavelength of the high-energy pulse laser that has completed the frequency double is within a preset green light wavelength range.

[0024] Preferably, the laser amplifier is a slab amplifier.

[0025] On the other hand, the present specification provides a microwave transmitter, including a photoconductive switch laser source applied to a microwave system provided by any one of the above aspects, as well as a photoconductive switch excited component and a microwave transmitting component.

[0026] On the other hand, this specification provides a high-energy microwave emission system, including a controller and a microwave emitter provided by any one of the above aspects;

[0027] The microwave transmitter also includes a power supply component, which is used to supply power to other components of the microwave transmitter;

[0028] The controller is respectively connected to the power supply components and / or microwave signal generators and / or microwave transmitting components of the multiple microwave transmitters, and can simultaneously start or stop the multiple microwave transmitters and / or synchronize the timing of the multiple microwave transmitters and / or adjust the directions of the multiple microwave transmitting components.

[0029] On the other hand, the present specification provides an electro-optical modulation method applied to a high-energy pulsed laser, using the electro-optical modulation component applied to a microwave system, the photoconductive switch laser source applied to a microwave system, the microwave transmitter or the high-energy microwave transmission system provided by any one of the above aspects;

[0030] Turning on the microwave signal generator, and outputting target time-sequence microwaves to the traveling wave electrode through the microwave signal generator;

[0031] Receiving the high-energy pulse laser through the first modulation crystal;

[0032] In response to a user's operation, adjusting the distance between the first modulation crystal and the second modulation crystal and / or the length of the connecting line so that the target timing microwave matches the rate of the high-energy pulse laser;

[0033] The timing of the high-energy pulse laser is adjusted by the target-timed microwaves oscillating between the first surface and the second surface, and the target-timed microwaves oscillating between the third surface and the fourth surface.

[0034] Preferably, a transition electrode is further arranged between the microwave connector and the traveling wave electrode, and before adjusting the timing of the high-energy pulse laser, the method further comprises:

[0035] In response to the user's operation, the phase of the target time-sequence microwave is adjusted by adjusting the length of any one of the transition electrodes. The above-mentioned at least one technical solution adopted in this specification can achieve the following

[0036] Beneficial effects:

[0037] In the electro-optical modulation component applied to the microwave system provided in this specification, the first surface and the second surface of the first modulation crystal are arranged oppositely, and the first proximal end face is arranged oppositely to the first distal end face. The third surface and the fourth surface of the second modulation crystal are arranged oppositely, the second proximal end face is arranged oppositely to the second distal end face, and the third surface is perpendicular to the first surface. A microwave signal generator, a microwave connector, a traveling wave electrode plated on the outside of the first surface and the second surface, a microwave connector, a connecting line, a microwave connector, a traveling wave electrode plated on the outside of the third surface and the third surface, a microwave connector, and a matching resistor are arranged in sequence along the microwave path. In addition, the first distal end face is opposite to the second proximal end face, so that the high-energy pulse laser can sequentially modulate the first modulation crystal and the second modulation crystal, and in the process, it is affected by the target timing microwave emitted by the microwave signal generator and modulated into a modulated pulse cluster laser.

[0038] It can be seen from the above content that the electro-optical modulation component can directly modulate the high-energy pulse laser, which simplifies the structure of the electro-optical modulation component and improves the stability of the modulated pulse cluster laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The drawings described herein are used to provide a further understanding of this specification and constitute a part of this specification. The illustrative embodiments and descriptions of this specification are used to explain this specification and do not constitute an improper limitation on this specification. In the drawings:

[0040] Figure 1 This is a schematic diagram of the structure of an electro-optical modulation component used in a microwave system in this specification;

[0041] Figure 2 A schematic diagram of the structure of a first modulation crystal provided in one embodiment of this specification;

[0042] Figure 3A partial structural schematic diagram of an electro-optical modulation component applied to a microwave system provided in one embodiment of the present specification;

[0043] Figure 4 A partial structural schematic diagram of an electro-optical modulation component applied to a microwave system provided in one embodiment of the present specification;

[0044] Figure 5 A schematic diagram of the structure of an electro-optical modulation component applied to a microwave system provided in one embodiment of this specification;

[0045] Figure 6 A waveform modulation diagram of electro-optical modulation provided for one embodiment of this specification;

[0046] Figure 7 A schematic diagram of the working principle of a slat amplifier adopted as an embodiment of the present specification;

[0047] Figure 8 A schematic diagram of the structure of a photoconductive switch laser source applied to a microwave system provided in one embodiment of the present specification;

[0048] Fig. 9 A schematic flow chart of an electro-optical modulation method applied to a high-energy pulsed laser provided for one embodiment of the present specification.

[0049] Explanation of the reference numerals: first modulation crystal 11; second modulation crystal 12; microwave signal generator 13; traveling wave electrode 14; connecting line 15; matching resistor 16; microwave connector 17; first surface 111; second surface 112; first proximal end face 113; first distal end face 114; third surface 121; fourth surface 122; high energy pulse laser 21; modulated pulse cluster laser 22; second proximal end face 123; second distal end face 124; transition electrode 18; target timing microwave 23; laser pulse 24; reflector 31; laser crystal 32; pump light 33; laser diode 41; volume grating 42; collimating and focusing element 43; polarizer 44; quarter wave plate 45; Pockels cell 46; semi-transparent and semi-reflective mirror 47; pressurization module 48; temperature control module 49; power supply 51; slat amplifier 52; frequency multiplier 53; polarizer 54; controller 55; analyzer 56. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical solutions and advantages of this specification more clear, the technical solutions of this specification will be clearly and completely described below in combination with the specific embodiments of this specification and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of this specification, not all of the embodiments. Based on the embodiments in this specification, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0051] In the description of the present invention, it should be noted that the term "or" is generally used in a meaning including "and / or", unless the content clearly indicates otherwise.

[0052] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. In addition, in the description of the present application, the terms "first", "second" and the like are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0053] Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0054] The technical solutions provided by the embodiments of this specification are described in detail below in conjunction with the accompanying drawings.

[0055] Figure 1 FIG. 1 is a schematic diagram of the structure of an electro-optical modulation component used in a microwave system in this specification. Figure 1 As shown, the electro-optical modulation component applied to the microwave system includes a first modulation crystal 11, a second modulation crystal 12, a microwave signal generator 13, a traveling wave electrode 14, a connecting line 15, a matching resistor 16 and a plurality of microwave connectors 17. During the modulation process, the high-energy pulse laser 21 input to the first modulation crystal 11 can be modulated into a modulated pulse cluster laser 22.

[0056] Preferably, the first modulation crystal 11 is configured with a first surface 111 and a second surface 112 which are arranged opposite to each other.

[0057] Preferably, the first surface 111 is parallel to the second surface 112 .

[0058] Preferably, the first surface 111 and the second surface 112 are completely consistent in shape and size.

[0059] Preferably, the first modulation crystal 11 is configured with a first proximal end face 113 and a first distal end face 114 which are arranged opposite to each other.

[0060] Figure 2 FIG. 1 is a schematic diagram of the structure of a first modulation crystal 11 provided in an embodiment of the present specification. Figure 2 As shown, the first surface 111 is disposed opposite to the second surface 112 , and the first proximal end surface 113 is disposed opposite to the first distal end surface 114 .

[0061] Preferably, the first modulation crystal 11 and the second modulation crystal 12 are both rectangular parallelepiped, such as Figure 2 shown.

[0062] In one or more preferred embodiments provided in the present specification, the proximal end and the distal end of each component are determined based on the propagation direction of the laser. Specifically, the end where the laser is incident is the proximal end of each component in the present specification, and the end where the laser is emitted is the distal end of each component in the present specification.

[0063] Preferably, the second modulation crystal 12 is configured with a third surface 121 and a fourth surface 122 which are arranged opposite to each other.

[0064] Preferably, the third surface 121 is parallel to the fourth surface 122 .

[0065] Preferably, the third surface 121 and the fourth surface 122 are completely consistent in shape and size.

[0066] Preferably, the second modulation crystal 12 is configured with a second proximal end face 123 and a second distal end face 124 which are arranged opposite to each other.

[0067] Preferably, the first surface 111 of the first modulation crystal 11 and the third surface 121 of the second modulation crystal 12 are perpendicular to each other.

[0068] Figure 3 A partial structural diagram of an electro-optical modulation component applied to a microwave system provided in one embodiment of the present specification. Figure 3 As shown, the positions and / or postures of the first modulation crystal 11 and the second modulation crystal 12 are adapted to each other, so that the first surface 111 and the third surface 121 are perpendicular to each other. The high energy pulse laser 21 traverses the first modulation crystal 11 and the second modulation crystal 12.

[0069] Preferably, the first distal end face 114 is arranged opposite to the second proximal end face 123 so that the high-energy pulse laser 21 can pass through the first proximal end face 113, the first distal end face 114, the second proximal end face 123 and the second distal end face 124 in sequence.

[0070] Figure 4 A partial structural diagram of an electro-optical modulation component applied to a microwave system provided in one embodiment of this specification. Figure 4 As shown, the high-energy pulse laser 21 passes through the first proximal end face 113 , the first distal end face 114 , the second proximal end face 123 and the second distal end face 124 in sequence, and is modulated into a modulated pulse cluster laser 22 in the process and passes out from the second distal end face 124 .

[0071] Preferably, the traveling wave electrode 14 is plated on the outside of the first surface 111 , the second surface 112 , the third surface 121 , and the fourth surface 122 .

[0072] Preferably, the proximal end of the traveling wave electrode 14 plated on the outer side of the first surface 111 is connected to the microwave signal generator 13 through the microwave connector 17 .

[0073] Preferably, the distal end of the traveling wave electrode 14 plated on the outer side of the first surface 111 is connected to the proximal end of the traveling wave electrode 14 plated on the outer side of the third surface 121 via a microwave connector 17 , a connecting line 15 , and a microwave connector 17 in sequence.

[0074] Preferably, the distal end of the traveling wave electrode 14 plated on the outer side of the third surface 121 is connected to the matching resistor 16 in turn through the microwave connector 17 .

[0075] Preferably, the microwave signal generator 13 is used to output target time-sequence microwaves 23 .

[0076] Preferably, the microwave signal generator 13 is a high-power microwave signal generator.

[0077] Preferably, the high-energy pulse laser 21 can be modulated into a modulated pulse cluster laser 22 by the electro-optical modulation component applied to the microwave system during the process of passing through the first modulation crystal 11 and the second modulation crystal 12 .

[0078] Preferably, the timing of the modulated pulse cluster laser 22 is the same as the target timing microwave 23 .

[0079] In the electro-optic modulation component applied to the microwave system provided in the above embodiment, the first surface 111 and the second surface 112 of the first modulation crystal 11 are arranged opposite to each other, and the first proximal end surface 113 is arranged opposite to the first distal end surface 114. The third surface 121 and the fourth surface 122 of the second modulation crystal 12 are arranged opposite to each other, the second proximal end surface 123 is arranged opposite to the second distal end surface 124, and the third surface 121 is perpendicular to the first surface 111. A microwave signal generator 13, a microwave connector 17, a traveling wave electrode 14 plated on the outside of the first surface 111 and the second surface 112, a microwave connector 17, a connecting line 15, a microwave connector 17, a traveling wave electrode 14 plated on the outside of the third surface 121 and the third surface 121, a microwave connector 17, and a matching resistor 16 are sequentially arranged along the microwave path, and the first distal end face 114 is opposite to the second proximal end face 123, so that the high-energy pulse laser 21 can sequentially modulate the first crystal 11 and the second crystal 12, and in the process is affected by the target timing microwave 23 emitted by the microwave signal generator 13, and is modulated into a modulated pulse cluster laser 22.

[0080] It can be seen from the above embodiments that the electro-optical modulation component can directly modulate the high-energy pulse laser 21 , which simplifies the structure of the electro-optical modulation component and improves the stability of the modulated pulse cluster laser 22 .

[0081] Preferably, the electro-optic modulation component applied to the microwave system further includes at least one transition electrode 18 .

[0082] Preferably, the transition electrode 18 is disposed between the microwave connector 17 and the traveling wave electrode 14 .

[0083] Preferably, only one transition electrode 18 is disposed between any group of microwave connectors 17 and the traveling wave electrode 14 .

[0084] Preferably, the at least one transition electrode 18 is used to adjust the phase of the target timing microwave 23 transmitted to the traveling wave electrode 14 .

[0085] Figure 5 The structure diagram of the electro-optic modulation component applied to the microwave system provided by one embodiment of the present specification is as follows. Figure 5 As shown, a transition electrode 18 is arranged between the microwave connector 17 and the traveling wave electrode 14 .

[0086] Preferably, the constituent material of the transition electrode 18 includes at least any one of transition metal oxide, transition metal sulfide, transition metal nitride or transition metal phosphide.

[0087] Preferably, the traveling wave electrode 14 includes a first coating layer and a second coating layer which are closely attached to each other.

[0088] Preferably, the first plating layer is in close contact with the second plating layer.

[0089] Preferably, the first coating layer and the second coating layer are doped with each other.

[0090] Preferably, the first plating layer is metal gold, and the first plating layer is in close contact with the microwave connector 17 .

[0091] Preferably, the second coating is titanium, chromium, nickel or other metals, and the second coating is in close contact with the traveling wave electrode 14, so that the target timing microwave 23 can smoothly enter the traveling wave electrode 14 after passing through the first coating, and oscillate between the traveling wave electrode 14 between the first surface 111 and the second surface 112, or oscillate between the traveling wave electrode 14 between the third surface 121 and the fourth surface 122, thereby achieving modulation of the high-energy pulse laser 21. It should be emphasized that the second coating can reduce the reflectivity of the traveling wave electrode 14 to the target timing microwave 23, reduce the microwave loss in the electro-optical modulation process, and improve the efficiency of electro-optical modulation.

[0092] Preferably, the outer surface of the connecting line 15 is covered with a shielding material.

[0093] Preferably, the connecting wire 15 is a shielded wire.

[0094] Preferably, the shield is a metal mesh braided layer, and at least a portion of the structure of the shield is grounded.

[0095] Preferably, the shielding covering the outer surface of the connecting line 15 can isolate external signals from the target timing microwave 23 transmitted in the connecting line 15, reduce the interference of external signals on the target timing microwave 23, and improve the accuracy and stability of electro-optical modulation of the high-energy pulse laser 21.

[0096] Preferably, the timing waveform of the target timing microwave 23 is a pulse cluster wave.

[0097] Preferably, the timing waveform of the high energy pulse laser 21 is a pulse wave.

[0098] Preferably, the high energy pulse laser 21 is a square wave.

[0099] Preferably, in the target time-series microwave 23, the pulse cluster is a square wave, and the sub-pulses in any pulse cluster are sinusoidal waves.

[0100] Those skilled in the art can understand that, generally, the waveform of the signal can be a square wave, a sine wave, a rectangular wave, a triangle wave, a sawtooth wave, etc., and this specification does not limit the specific waveforms of the high-energy pulse laser 21, the pulse cluster of the target timed microwave 23, and the sub-pulses of the pulse cluster of the target timed microwave 23.

[0101] Preferably, the pulse cluster frequency of the target time-sequential microwave 23 is equal to the frequency of the high-energy pulse laser 21. For example, the target time-sequential microwave 23 outputs 10,000 pulse clusters per second, and the high-energy pulse laser 21 outputs 10,000 pulses per second.

[0102] Those skilled in the art can understand that the target timing microwave 23 is output by the microwave signal generator 13, and the microwave signal generator 13 can output the corresponding target timing microwave 23 in response to the user's operation. Therefore, in one or more preferred embodiments provided in this specification, the user can give the frequency of the high-energy pulse laser 21 and adjust the parameters of the microwave signal generator 13 so that the pulse cluster frequency of the target timing microwave 23 output by the microwave signal generator 13 is equal to the frequency of the high-energy pulse laser 21.

[0103] Figure 6 The waveform modulation diagram of electro-optical modulation provided in one embodiment of this specification. Figure 6As shown, the pulse cluster frequency of the target timing microwave 23 transmitted in the traveling wave electrode 14 is equal to the frequency of the high energy pulse laser 21 transmitted in the first electro-optical crystal, and one pulse cluster contains multiple sub-pulses.

[0104] Preferably, the single pulse energy of the high energy pulse laser 21 is at the mJ level or 10 mJ level.

[0105] Preferably, the single pulse energy of the high energy pulse laser 21 is 1 mJ-99 mJ.

[0106] Preferably, the pulse width of the high energy pulse laser 21 is 5ns-50ns.

[0107] Preferably, the repetition rate of the high energy pulse laser 21 is 50 Hz-20 KHz.

[0108] Preferably, the wavelength of the high energy pulse laser 21 is 492nm-577nm.

[0109] It should be noted that in one or more preferred embodiments provided in this specification, in order to reduce the half-wave voltage, improve the stability of modulation, and reduce costs, this specification implements electro-optical modulation through adjacent first modulation crystals 11 and second modulation crystals 12.

[0110] Those skilled in the art can understand that there is an electric field between two mutually parallel traveling wave electrodes 14, and the direction of the electric field is related to the direction of the traveling wave electrode 14. Therefore, in one or more embodiments of the present specification, there is an electric field between the first surface 111 and the second surface 112 of the first modulation crystal 11, and there is also an electric field between the third surface 121 and the fourth surface 122 of the second modulation crystal 12. Moreover, since the first surface 111 is perpendicular to the third surface 121, the electric field in the first modulation crystal 11 is perpendicular to the electric field in the second modulation crystal 12. In other words, the electric field in the first modulation crystal 11 is orthogonal to the electric field in the second modulation crystal 12.

[0111] Preferably, the traveling wave electrodes 14 respectively plated on the first modulation crystal 11 and the second modulation crystal 12 are electrically connected in series, and the first modulation crystal 11 and the second modulation crystal 12 are optically orthogonal, so that the first modulation crystal 11 and the second modulation crystal 12 can achieve temperature self-compensation, which reduces the occurrence of temperature drift to a certain extent, reduces the phase delay caused by natural birefringence, and reduces the half-wave voltage.

[0112] Preferably, the electro-optical modulation component is a high-speed traveling wave electro-optical modulator.

[0113] Preferably, the microwave equivalent refractive index of the traveling wave electrode 14 is equal to the light wave refractive index of the first electro-optical crystal and the second electro-optical crystal.

[0114] Preferably, the resistance of the matching resistor 16 is 50.

[0115] Preferably, the characteristic impedance of the electro-optical modulation component is 50.

[0116] Preferably, the output impedance of the electro-optical modulation component is a value between 45-55.

[0117] Preferably, the first modulation crystal 11 and the second modulation crystal 12 have exactly the same shape, size and constituent material.

[0118] Preferably, the materials of the first modulation crystal 11 and the second modulation crystal 12 are potassium titanyl phosphate (KTiOPO4, KTP) crystal or lithium niobate (LiNbO3, LN) crystal, etc., and this specification does not impose any limitation on this.

[0119] It can be understood by those skilled in the art that the traveling wave electrode 14 and the matching resistor 16 constitute the transmission link of the target timing microwave 23. If the characteristic impedance of the traveling wave electrode 14 matches the impedance of the matching resistor 16, the matching resistor 16 will absorb all microwave power. Otherwise, a certain amount of microwave power will be reflected back along the line, weakening the transmission signal of the traveling wave electrode 14 and affecting the modulation performance and effect.

[0120] Preferably, the resistance of the matching resistor 16 matches the characteristic impedance.

[0121] Preferably, the resistance of the matching resistor 16 is equal to the characteristic impedance.

[0122] Preferably, the user can determine the characteristic impedance of the electro-optical modulation component by the following formula, and based on the characteristic impedance, determine the resistance value of the matching resistor 16 and select the corresponding matching resistor 16:

[0123]

[0124] Where Z0 is the characteristic impedance of the electro-optical modulation component, U i (z) is the voltage of the target timing microwave 23 at z, I i (z) The current of the target timing microwave 23 at z, R, L, G and C are the distributed matching resistance 16, distributed inductance, distributed conductance and distributed capacitance at z respectively.

[0125] Preferably, the operating bandwidth of the electro-optical modulation component is greater than or equal to a preset bandwidth threshold.

[0126] Preferably, the bandwidth threshold is preset and may be 3 GHz, 2 GHz, 4 GHz, etc., and this specification does not impose any limitation thereto.

[0127] Preferably, the operating bandwidth of the electro-optical modulation component can be calculated by the following formula:

[0128]

[0129] Wherein, Δf is the working bandwidth of the electro-optical modulation component, C is the capacitance, L is the length of the traveling wave electrode 14, N m is the microwave refractive index of the traveling wave electrode 14 , and N0 is the light wave refractive index of the first modulation crystal 11 and the second modulation crystal 12 .

[0130] Preferably, after the modulation is completed, the waveform of the modulated pulse cluster laser 22 is completely consistent with the target time-sequence microwave 23 .

[0131] Preferably, the microwave signal generator 13 may be a voltage-controlled frequency-variable oscillator, a frequency synthesizer, a microwave signal generator, an arbitrary waveform generator, or a function generator, etc. Furthermore, the microwave signal generator 13 may be a combination of a voltage-controlled frequency-variable oscillator, a frequency synthesizer, a microwave signal generator, an arbitrary waveform generator, or a function generator, etc., and a power amplifier, and this specification does not impose any limitation on this.

[0132] Preferably, the output voltage of the microwave signal generator 13 is 500V-1500V.

[0133] Preferably, the output voltage of the microwave signal generator 13 is adjustable.

[0134] Preferably, the output bandwidth of the microwave signal generator 13 is greater than a preset output bandwidth threshold.

[0135] Preferably, the output bandwidth threshold is preset, and may be 3 GHz, 4 GHz, or 5 GHz, etc.

[0136] Preferably, the electro-optic modulation component further includes a polarizer 54 .

[0137] Preferably, the polarizer 54 is capable of allowing light with a wavelength in a preset wavelength range to pass through.

[0138] Preferably, the polarizer 54 is adjacent to the first proximal end face 113 of the first modulation crystal 11 , and can be penetrated by the high-energy pulse laser 21 irradiated to the first proximal end face 113 of the first modulation crystal 11 .

[0139] Preferably, the preset wavelength range is 492nm-577nm, 500nm-550nm, etc., and this specification does not limit this.

[0140] Preferably, the polarizer 54 can be a dichroic filter, a Glan prism, etc., which is not limited in this specification.

[0141] Preferably, the electro-optic modulation component further includes a polarizer 54 .

[0142] Preferably, the polarizer 54 is adjacent to the first proximal end face 113 of the first modulation crystal 11 , and can be penetrated by the high-energy pulse laser 21 irradiated to the first proximal end face 113 of the first modulation crystal 11 .

[0143] Preferably, the polarizer 54 is used to convert the polarization state of the high-energy pulse laser 21 into linear polarization, wherein the polarization direction of the polarizer 54 is the same as the polarization direction of the high-energy pulse laser 21 .

[0144] Preferably, the polarizer 54 can be a polarizing plate, a Glan prism, etc., which is not limited in this specification.

[0145] Preferably, the electro-optic modulation component also includes a quarter wave plate 45 and a polarizer 56 .

[0146] Preferably, the quarter wave plate 45 and the analyzer 56 are both adjacent to the second distal end face 124 of the second modulation crystal, and can be passed through by the modulated pulse cluster laser 22 emitted from the distal end face of the second modulation crystal 12 .

[0147] Preferably, the quarter wave plate 45 can convert light in an elliptically polarized state into light in a linearly polarized state.

[0148] Preferably, the analyzer 56 includes at least one polarizer 44 .

[0149] Preferably, at least one polarizer 44 of the analyzer 56 can rotate with the optical path of the modulated pulse cluster laser 22 as the center line in response to user operation, and change the transmittance of light with different polarization states and / or polarization angles during the rotation.

[0150] Preferably, the quarter wave plate 45 is located between the second modulation crystal 12 and the analyzer 56 .

[0151] Preferably, the electro-optical modulation component applied to the microwave system further includes a power supply 51, and the power supply 51 is used to supply power to other components of the electro-optical modulation component applied to the microwave system.

[0152] Preferably, the electro-optical modulation component applied to the microwave system further includes a controller 55, and the controller 55 is used to turn on or off any component of the electro-optical modulation component applied to the microwave system.

[0153] Preferably, the controller 55 is also connected to the microwave signal generator 13 , and can adjust the parameters of the microwave signal generator 13 in response to the user's operation, thereby adjusting the parameters of the target time-sequence microwave 23 .

[0154] It can be seen from the above content that the electro-optical modulation component has a simple structure, low cost, small size, and high integration.

[0155] The above is an electro-optical modulation component applied to a microwave system provided by one or more embodiments of this specification. Based on the same idea, this specification also provides a corresponding photoconductive switch laser source applied to a microwave system.

[0156] Preferably, the photoconductive switch laser source applied to a microwave system comprises the electro-optical modulation component applied to a microwave system provided by any one of the above embodiments, and a laser component.

[0157] Preferably, the laser assembly includes a pulse seed source, a laser amplifier and a frequency multiplier 53 which are sequentially arranged along the optical path.

[0158] Preferably, the pulse seed source includes a seed source, a Q-switching component and a temperature control unit.

[0159] Preferably, the pulse seed source is used to output laser pulses 24 .

[0160] Preferably, the laser amplifier is used to amplify the laser pulse 24 into the high-energy pulse laser 21 .

[0161] Preferably, the power of the high-energy pulse laser 21 is greater than a preset power threshold.

[0162] Preferably, the power is the average power of the high-energy pulse laser 21 .

[0163] Preferably, the power is the instantaneous power of the high-energy pulse laser 21 .

[0164] Preferably, the frequency doubler 53 is capable of frequency doubling the high-energy pulse laser 21 .

[0165] It is understood by those skilled in the art that the laser pulse 24 is outputted through the Q-switching component, and the frequency doubler 53 then frequency doubles the laser pulse 24. Therefore, in one or more preferred embodiments provided in this specification, the frequency doubler 53 is adapted to the structure of the Q-switching component, so that the wavelength of the high-energy pulsed laser 21 that has completed the frequency double is within the preset green light wavelength range.

[0166] Preferably, the green light wavelength range is 492nm-577nm, 500nm-550nm, etc., and this specification does not limit this.

[0167] Preferably, the laser amplifier is a slab amplifier 52, a traveling wave amplifier, etc., and this specification does not impose any limitation thereto.

[0168] Preferably, the laser amplifier is a slab amplifier 52 .

[0169] Figure 7 FIG. 5 is a schematic diagram of the working principle of the slat amplifier 52 according to an embodiment of the present specification. Figure 7 As shown, the laser pulse 24 is irradiated to the reflector 31 via the laser crystal 32, and is reflected to another reflector 31, thereby reflecting back and forth between the two reflectors 31, and penetrates the laser crystal 32 multiple times during the reflection process. In the process of penetrating the laser crystal 32, it absorbs energy from the pump light 33 irradiated to the laser crystal 32, is amplified, becomes a high-energy pulse laser 21, and is emitted from the laser crystal 32.

[0170] It should be noted that the laser crystal 32 in the slab amplifier 52 may be the same as or different from the laser crystal 32 in the Q-switching component. For the convenience of explanation, this specification uses the figure mark 32 to identify the laser crystal 32 in the slab amplifier 52 and the laser crystal 32 in the Q-switching component.

[0171] Preferably, the seed source includes a laser diode 41 and a volume grating 42 .

[0172] Preferably, the Q-switching component is of active Q-switching type.

[0173] Preferably, the Q-switching component is of passive Q-switching type.

[0174] Preferably, the Q-switching component includes a laser crystal 32 , a polarizer 44 , a quarter-wave plate 45 , a Pockels cell 46 , a semi-transparent and semi-reflective mirror 47 and a pressurizing module 48 .

[0175] Preferably, the pressurizing module 48 can apply voltage to the Pockels cell 46 in response to a user's operation, thereby completing Q-switching.

[0176] Those skilled in the art will appreciate that the technologies related to the seed source, the Q-switching component and the temperature control module 49 have been relatively mature, and this specification does not limit the specific structure of the seed source, the Q-switching component or the temperature control module 49. The seed source, the Q-switching component or the temperature control module 49 may adopt any related structure commonly used in the art.

[0177] Preferably, a collimating and focusing component 43 is further provided between the seed source and the Q-switching component.

[0178] Preferably, the collimating and focusing component 43 includes a focusing mirror and a collimator.

[0179] Preferably, the temperature control module 49 is respectively adjacent to the seed source and the Q-switching component, and is used to control the temperature of the seed source and the Q-switching component.

[0180] Preferably, the temperature control module 49 is respectively adjacent to the laser diode 41 and the laser crystal 32 , and is used to control the temperature of the laser diode 41 and the laser crystal 32 .

[0181] Preferably, the photoconductive switching laser source applied to the microwave system further comprises a power supply 51, and the power supply 51 is used to supply power to other components of the photoconductive switching laser source applied to the microwave system.

[0182] Preferably, the photoconductive switch laser source applied to the microwave system further includes a controller 55, and the controller 55 is used to turn on or off any component of the photoconductive switch laser source applied to the microwave system.

[0183] It should be emphasized that the photoconductive switching laser source applied to the microwave system may include one or more power supplies 51 but may only include one controller 55 .

[0184] Figure 8 The structure diagram of a photoconductive switch laser source applied to a microwave system is provided as a schematic diagram of an embodiment of the present specification. Figure 8 As shown, the controller 55 is connected to the power supply 51, the pressurizing module 48, the temperature control module 49, and the microwave signal generator 13 to control the switches of each component. The laser diode 41, the volume grating 42, the collimating and focusing component 43, the laser crystal 32, the polarizer 44, the quarter-wave plate 45, the Pockels cell 46, the semi-transparent and semi-reflective mirror 47, and the slab amplifier 52 can amplify the laser pulse 24 and amplify it into a high-energy pulse laser 21, and then output it to the first modulation crystal 11, and output the modulated pulse cluster laser 22 through modulation of the electro-optical modulation component.

[0185] The above are electro-optic modulation components applied to microwave systems and photoconductive switch laser sources applied to microwave systems provided in one or more embodiments of this specification. Based on the same idea, this specification also provides a corresponding microwave transmitter.

[0186] Preferably, the microwave transmitter comprises a photoconductive switch laser source applied to a microwave system or an electro-optical modulation component applied to a microwave system provided by any one of the above embodiments, as well as a photoconductive switch excited component and a microwave transmitting component.

[0187] It is understandable to those skilled in the art that the development of devices such as photoconductive switch excited components and microwave transmitting components has been relatively mature. Therefore, this specification does not provide a detailed description of the structure of photoconductive switch excited components and microwave transmitting components, nor does it limit the structure of photoconductive switch excited components and microwave transmitting components.

[0188] The above are electro-optical modulation components applied to microwave systems, photoconductive switch laser sources applied to microwave systems, and microwave transmitters provided in one or more embodiments of this specification. Based on the same idea, this specification also provides a corresponding high-energy microwave transmission system.

[0189] Preferably, the high-energy microwave emission system comprises a controller 55 and a plurality of microwave emitters, wherein the microwave emitters are those provided in the above-mentioned embodiment.

[0190] Preferably, the microwave transmitter also includes a power supply 51 component.

[0191] Preferably, the power supply 51 component is used to power other components of the microwave transmitter.

[0192] Preferably, the microwave launcher is only equipped with one controller 55 .

[0193] Preferably, the controller 55 is respectively connected to the power supply 51 components and / or the microwave signal generator 13 and / or the microwave transmitting components of the multiple microwave transmitters, and can simultaneously start or stop the multiple microwave transmitters and / or synchronize the timing of the multiple microwave transmitters and / or adjust the directions of the multiple microwave transmitting components.

[0194] The above are the electro-optical modulation components applied to microwave systems, the photoconductive switch laser sources applied to microwave systems, the microwave transmitters and the high-energy microwave transmission systems provided in one or more embodiments of this specification. Based on the same idea, this specification also provides the corresponding electro-optical modulation methods applied to high-energy pulse lasers 21.

[0195] Fig. 9 The following is a flow chart of an electro-optical modulation method for high-energy pulsed laser provided in one embodiment of the present specification. Fig. 9 As shown, the method specifically comprises the following steps:

[0196] S900: Turn on the microwave signal generator, and output target time-sequence microwaves to the traveling wave electrode through the microwave signal generator.

[0197] Preferably, the method can be performed by the electro-optical modulation component applied to the microwave system, the photoconductive switch laser source applied to the microwave system, the microwave transmitter or the high-energy microwave transmission system provided by any of the above embodiments. For the sake of convenience, this specification takes the microwave transmitter performing the method as an example for description. It should be emphasized that the electro-optical modulation component applied to the microwave system, the photoconductive switch laser source applied to the microwave system, the microwave transmitter and the high-energy microwave transmission system provided by the above embodiments have been described relatively clearly. For the sake of brevity, the contents of the method related to the above embodiments will not be repeated here. Please refer to the electro-optical modulation component applied to the microwave system, the photoconductive switch laser source applied to the microwave system, the microwave transmitter and the high-energy microwave transmission system provided by the above embodiments.

[0198] Preferably, the microwave transmitter can turn on the microwave signal generator in response to the user's operation, and output the target time-sequence microwave to the traveling wave electrode through the microwave signal generator.

[0199] It should be noted that the method can also be performed by a high-energy microwave transmitting system, and the high-energy microwave transmitting system includes multiple microwave signal generators. Therefore, in one or more preferred embodiments provided in this specification, the microwave transmitter can respond to the user's operation, turn on all the microwave signal generators it includes, and output the target time-sequence microwaves to the traveling wave electrodes corresponding to each signal board through all the microwave signal generators. It should be noted that the target time-sequence microwaves output by each microwave signal generator are exactly the same.

[0200] S902: Receive the high-energy pulse laser through the first modulation crystal.

[0201] Preferably, the microwave transmitter can receive the high-energy pulse laser through the first modulation crystal.

[0202] S904: In response to the user's operation, adjust the distance between the first modulation crystal and the second modulation crystal and / or the length of the connecting line so that the target timing microwave matches the rate of the high-energy pulse laser.

[0203] Preferably, the microwave transmitter can adjust the distance between the first modulation crystal and the second modulation crystal and / or the length of the connecting line in response to the user's operation, so that the target timing microwave matches the rate of the high-energy pulse laser.

[0204] In one or more preferred embodiments provided in this specification, the distance between the first modulation crystal and the second modulation crystal can affect the transmission rate of the high-energy pulse laser pulse.

[0205] In one or more preferred embodiments provided in this specification, the length of the connecting line can affect the transmission rate of the target time-sequence microwave.

[0206] Therefore, by adjusting the distance between the first modulation crystal and the second modulation crystal and / or the length of the connecting line, the transmission rate of the high-energy pulse laser pulse or the target timing microwave can be adjusted.

[0207] S906: adjusting the timing of the high-energy pulse laser by oscillating the target timing microwaves between the first surface and the second surface, and the target timing microwaves between the third surface and the fourth surface.

[0208] Preferably, the microwave transmitter can adjust the timing of the high-energy pulse laser by oscillating the target timing microwaves between the first surface and the second surface, and the target timing microwaves between the third surface and the fourth surface, thereby completing the electro-optical modulation of the high-energy pulse laser.

[0209] According to the above embodiments, during operation, the distance between the first modulation crystal and the second modulation crystal and / or the length of the connecting line can be adjusted in response to the user's operation, so that the target timing microwave matches the rate of the high-energy pulse laser, thereby improving the efficiency and accuracy of electro-optical modulation and reducing microwave losses.

[0210] In addition, in one or more preferred embodiments provided in this specification, the microwave transmitter can also adjust the phase of the target time-series microwave by adjusting the length of any one of the transition electrodes in response to the user's operation.

[0211] It should be noted that all actions of acquiring signals, information or data in this application are carried out in compliance with the relevant data protection laws and policies of the country where they are located, and with the authorization given by the owner of the corresponding device.

[0212] In the 1990s, improvements to a technology could be clearly distinguished as hardware improvements (for example, improvements to the circuit structure of diodes, transistors, switches, etc.) or software improvements (improvements to the method flow). However, with the development of technology, many improvements to the method flow today can be regarded as direct improvements to the hardware circuit structure. Designers almost always obtain the corresponding hardware circuit structure by programming the improved method flow into the hardware circuit. Therefore, it cannot be said that an improvement in a method flow cannot be implemented using a hardware entity module. For example, a programmable logic device (PLD) (such as a field programmable gate array (FPGA)) is such an integrated circuit whose logical function is determined by the user's programming of the device. Designers can "integrate" a digital system on a PLD by programming it themselves, without having to ask a chip manufacturer to design and produce a dedicated integrated circuit chip. Moreover, nowadays, instead of manually making integrated circuit chips, this kind of programming is mostly implemented by "logic compiler" software, which is similar to the software compiler used when developing and writing programs, and the original code before compilation must also be written in a specific programming language, which is called hardware description language (HDL). There is not only one HDL, but many kinds, such as ABEL (Advanced Boolean Expression Language), AHDL (Altera Hardware Description Language), Confluence, CUPL (Cornell University Programming Language), HDCal, JHDL (Java Hardware Description Language), Lava, Lola, MyHDL, PALASM, RHDL (Ruby Hardware Description Language), etc. The most commonly used ones are VHDL (Very-High-Speed ​​Integrated Circuit Hardware Description Language) and Verilog. Those skilled in the art should also be aware that it is only necessary to program the method flow slightly in the above-mentioned hardware description languages ​​and program it into the integrated circuit, and then it is easy to obtain the hardware circuit that implements the logic method flow.

[0213] The controller can be implemented in any appropriate manner. For example, the controller can take the form of a microprocessor or processor and a computer-readable medium storing a computer-readable program code (such as software or firmware) that can be executed by the (micro)processor, a logic gate, a switch, an application-specific integrated circuit (ASIC), a programmable logic controller, and an embedded microcontroller. Examples of controllers include, but are not limited to, the following microcontrollers: ARC625D, AtmelAT91SAM, MicrochipPIC18F26K20, and Silicone Labs C8051F320. The memory controller can also be implemented as part of the control logic of the memory. Those skilled in the art also know that in addition to implementing the controller in a purely computer-readable program code manner, the controller can be implemented in the form of a logic gate, a switch, an application-specific integrated circuit, a programmable logic controller, and an embedded microcontroller by logically programming the method steps. Therefore, this controller can be considered as a hardware component, and the devices included therein for implementing various functions can also be considered as structures within the hardware component. Or even, the devices for implementing various functions can be considered as both software modules for implementing the method and structures within the hardware component.

[0214] The systems, devices, modules or units described in the above embodiments may be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, the computer may be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0215] For the convenience of description, the above device is described in various units according to their functions. Of course, when implementing this specification, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0216] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0217] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0218] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0219] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0220] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0221] The memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0222] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0223] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0224] Those skilled in the art will appreciate that the embodiments of this specification may be provided as methods, systems or computer program products. Therefore, this specification may take the form of a complete hardware embodiment, a complete software embodiment or an embodiment combining software and hardware. Moreover, this specification may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0225] This specification may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. This specification may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communication network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0226] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0227] The above description is only an embodiment of this specification and is not intended to limit this specification. For those skilled in the art, this specification may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this specification should be included in the scope of the claims of this application.

Claims

1. An electro-optical modulation component for use in a microwave system, characterized in that: It includes a first modulation crystal, a second modulation crystal, a microwave signal generator, a traveling wave electrode, a connecting line, a matching resistor and a plurality of microwave connecting parts: The first modulating crystal is configured with a first surface, a second surface, a first proximal end face and a first distal end face which are arranged oppositely; the second modulating crystal is configured with a third surface, a fourth surface, a second proximal end face and a second distal end face which are arranged oppositely; and the first surface and the third surface are perpendicular to each other; The first distal end surface is arranged opposite to the second proximal end surface, so that the high-energy pulse laser can sequentially pass through the first proximal end surface, the first distal end surface, the second proximal end surface and the second distal end surface; The traveling wave electrode is plated on the outside of the first surface, the second surface, the third surface and the fourth surface; the proximal end of the traveling wave electrode plated on the outside of the first surface is connected to the microwave signal generator through the microwave connector, and the distal end is connected to the proximal end of the traveling wave electrode plated on the outside of the third surface through the microwave connector, the connecting line and the microwave connector, and the distal end of the traveling wave electrode plated on the outside of the third surface is connected to the matching resistor through the microwave connector; the microwave signal generator is used to output target timing microwaves, and the target timing microwaves can oscillate between the first surface and the second surface, and between the third surface and the fourth surface, and the timing of the high-energy pulse laser can be adjusted during the oscillation process, so that the high-energy pulse laser is modulated into a modulated pulse cluster laser in the process of passing through the first modulation crystal and the second modulation crystal; The distance between the first modulation crystal and the second modulation crystal and / or the length of the connecting line can be adjusted, and during the adjustment process, the target timing microwave can be matched with the rate of the high-energy pulse laser.

2. The electro-optical modulation component for microwave system according to claim 1, characterized in that: The electro-optic modulation component applied to the microwave system further comprises at least one transition electrode; The transition electrode is arranged between the microwave connector and the traveling wave electrode, and only one transition electrode is arranged between any group of microwave connectors and the traveling wave electrode; The at least one transition electrode is used to adjust the phase of the target time-sequence microwave transmitted to the traveling wave electrode.

3. The electro-optical modulation component for microwave system according to claim 1 or 2, characterized in that: The traveling wave electrode comprises a first coating layer and a second coating layer which are closely attached to each other; The first plating layer is metal gold, and the first plating layer is in close contact with the microwave connector; The second coating layer is made of metal titanium, and the second coating layer is in close contact with the traveling wave electrode.

4. The electro-optical modulation component for microwave system according to claim 1 or 2, characterized in that: The outer surface of the connecting wire is covered with a shielding material.

5. A photoconductive switch laser source for use in a microwave system, characterized in that: It comprises the electro-optical modulation component applied to a microwave system as described in any one of claims 1 to 4, and a laser component.

6. The photoconductive switch laser source for microwave system according to claim 5, characterized in that: The laser assembly includes a pulse seed source, a laser amplifier and a frequency multiplier arranged in sequence along the optical path; The pulse seed source includes a seed source, a Q-switching component and a temperature control unit, and is used to output laser pulses; The laser amplifier is used to amplify the laser pulse into the high-energy pulse laser, and the power of the high-energy pulse laser is greater than a preset power threshold; The frequency doubler can double the frequency of the high-energy pulse laser, and the frequency doubler is adapted to the structure of the Q-switching component, so that the wavelength of the high-energy pulse laser that has completed the frequency double is within a preset green light wavelength range.

7. The photoconductive switch laser source for microwave system according to claim 6, characterized in that: The laser amplifier is a slab amplifier.

8. A microwave transmitter, characterized in that: It comprises a photoconductive switch laser source applied to a microwave system as described in any one of claims 5 to 7, as well as a photoconductive switch excited component and a microwave emitting component.

9. A high energy microwave transmission system, characterized in that: comprising a controller and a plurality of microwave launchers according to claim 8; The microwave transmitter also includes a power supply component, which is used to supply power to other components of the microwave transmitter; The controller is respectively connected to the power supply components and / or microwave signal generators and / or microwave transmitting components of multiple microwave transmitters, and can simultaneously start or stop the multiple microwave transmitters and / or synchronize the timing of the multiple microwave transmitters and / or adjust the directions of the multiple microwave transmitting components.

10. An electro-optical modulation method applied to high-energy pulsed laser, characterized in that: Utilizing the electro-optical modulation component for microwave systems as described in any one of claims 1 to 4, the photoconductive switch laser source for microwave systems as described in any one of claims 5 to 7, the microwave transmitter as described in claim 8, or the high-energy microwave transmitting system as described in claim 9; Turning on the microwave signal generator, and outputting target time-sequence microwaves to the traveling wave electrode through the microwave signal generator; Receiving the high-energy pulse laser through the first modulation crystal; In response to a user's operation, adjusting the distance between the first modulation crystal and the second modulation crystal and / or the length of the connecting line so that the target timing microwave matches the rate of the high-energy pulse laser; The timing of the high-energy pulse laser is adjusted by the target-timed microwaves oscillating between the first surface and the second surface, and the target-timed microwaves oscillating between the third surface and the fourth surface.

11. The electro-optical modulation method for high-energy pulse laser according to claim 10, characterized in that: A transition electrode is also arranged between the microwave connector and the traveling wave electrode. Before adjusting the timing of the high-energy pulse laser, the method further comprises: In response to the user's operation, the phase of the target time-sequence microwave is adjusted by adjusting the length of any one of the transition electrodes.

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