A real-time detection device for the thickness of thin film on the surface of semiconductor wafer

Abstract

The invention relates to a semiconductor wafer surface film thickness real-time detection device in the field of detection devices, comprising a vapor deposition device, the vapor deposition device comprising an upper reaction chamber and a lower device chamber, an electrode plate is installed on the top of the upper reaction chamber, an air inlet pipe is installed in the middle of the electrode plate, an exhaust pipe is installed on the lower side of the side end of the vapor deposition device, a loading disk is rotatably connected in the vapor deposition device, the loading disk comprises a main disk body, an inner rotating shaft is rotatably connected in the middle of the main disk body, the outer end of the bottom of the inner rotating shaft is connected to a transmission gear ring through a bearing, a plurality of circumferentially distributed mounting grooves are opened on the main disk body; a sub-turntable is installed in the mounting groove, a power structure matching the loading disk is installed in the lower device chamber, real-time monitoring and precise control of the semiconductor film deposition process are realized, the uniformity and quality of the film deposition are ensured by precisely controlling the deposition parameters and real-time monitoring of the film quality, and it is convenient to realize automatic detection of the film thickness and quality.

Description

Technical Field

[0001] The present invention relates to a semiconductor wafer surface film thickness real-time detection device, in particular to a semiconductor wafer surface film thickness real-time detection device applied in the detection device field. Background Art

[0002] With the rapid development of the semiconductor industry, the feature size of integrated circuits is becoming increasingly miniaturized, and semiconductor chips are constantly developing towards small size, high circuit density, high speed, and low power consumption. Integrated circuits have now entered the ULSI submicron technology stage. With the gradual increase in the diameter of silicon wafers, the width of the lines in the components is gradually reduced, and the number of metal layers increases, the high polishing of the semiconductor film surface has an important impact on the high performance, low cost, and high yield of the device. Therefore, the requirements for the film on the surface of silicon wafers will become increasingly stringent.

[0003] In order to solve the problem of rapid detection of thin film thickness on semiconductor wafers, a certain detection equipment on the market adopts a reflection spectroscopy detection design and has a certain market share.

[0004] The specification of Chinese invention patent CN116766042B discloses an online thickness detection method and device for wafer film grinding. The method includes obtaining a measured spectral curve of the relationship between the reflectivity and wavelength of the wafer film during the grinding process of the wafer film; selecting a first band and a second band in the measured spectral curve according to two preset wavelength ranges respectively; calculating the measured integrated area ratio of the first band and the second band; determining the current thickness of the wafer film according to a corresponding relationship curve between the measured integrated area ratio and the reference integrated area ratio and the thickness, wherein the corresponding relationship curve is based on the reference spectrum under wafer films of different thicknesses.

[0005] Most of the existing detection equipment is used to detect the thickness of formed films, while the equipment that can detect the thickness during the thin film vapor deposition process mostly uses non-contact monitoring, such as optical detection. However, during optical detection, the light is easily disturbed by the gas phase in the equipment, which in turn affects the detection results. The current vapor deposition equipment is not convenient for automatic and accurate detection and real-time monitoring of the thin film on the surface of the semiconductor wafer during operation. Summary of the invention

[0006] In view of the above-mentioned prior art, the technical problem to be solved by the present invention is that most of the existing detection equipment detects the thickness of the formed film, and most of the equipment that can detect the thickness during the thin film vapor deposition process uses non-contact monitoring, such as optical detection. However, during optical detection, the light is easily disturbed by the gas phase in the equipment. The current vapor deposition equipment is not convenient for automatic and accurate detection and real-time monitoring of the thin film on the surface of the semiconductor wafer during operation.

[0007] In order to solve the above problems, the present invention provides a real-time detection device for the thickness of a thin film on a semiconductor wafer surface, comprising a vapor deposition device, the vapor deposition device comprising an upper reaction chamber and a lower device chamber, an electrode plate is installed on the top of the upper reaction chamber, an air inlet pipe is installed in the middle of the electrode plate, an exhaust pipe is installed on the lower side of the side end of the vapor deposition device, a loading disk is rotatably connected inside the vapor deposition device, the loading disk comprises a main disk body, an inner rotating shaft is rotatably connected in the middle of the main disk body, the outer end of the bottom of the inner rotating shaft is connected to a transmission gear ring through a bearing, and the transmission gear ring is fixedly connected to the main disk body, and a plurality of circumferentially distributed mounting grooves are opened on the main disk body;

[0008] A butt joint is installed in the middle of the main disc body, a ventilation pipe rotatably connected to the butt joint is passed through the air intake pipe, a guide channel is opened between the installation groove and the input end of the transmission gear ring, and an air guide ring matching the guide channel is installed in the installation groove;

[0009] A secondary turntable is installed in the installation groove, and the secondary turntable includes a lifting platform rotatably connected to the installation groove, a transmission belt is connected between the lifting platform and the inner rotating shaft, a heat conducting plate is installed on the power telescopic end of the lifting platform, and a heater is installed at the bottom end of the heat conducting plate;

[0010] A power structure matching the loading tray is installed in the lower equipment room, the power structure includes a first motor and a second motor, a transmission gear matching the transmission gear ring is installed at the power output end of the first motor, and the power output end of the second motor is fixedly connected to the inner rotating shaft;

[0011] A detection structure matching the auxiliary turntable is installed in the vapor deposition equipment. The detection structure includes a movable table. A lifting rod is connected between the movable table and the upper reaction chamber. A spectral detector is installed on the movable table. A through hole is opened on the movable table. A laser detector fixedly connected to the vapor deposition equipment is inserted into the through hole.

[0012] In the above-mentioned semiconductor wafer surface film thickness real-time detection device, real-time rough detection is achieved during the thin film vapor deposition process, and it is convenient to close the semiconductor wafer for accurate detection.

[0013] As a further improvement of the present application, the spectral detector is used for accurate detection of the semiconductor wafer film on the heat transfer disk. When the spectral detector is working, the detection structure descends to the mounting groove, and the heat transfer disk descends to the set position, and at the same time, the power output end of the first motor is separated from the transmission gear ring.

[0014] As a further improvement of the present application, a sealing docking ring covering the mounting groove is installed at the bottom end of the movable platform. After the movable platform is lowered to the mounting groove, the opening of the mounting groove is closed by the sealing docking ring.

[0015] As a further improvement of the present application, the inner rotating shaft includes a transmission shaft cylinder rotatably connected to the main disk body, and the bottom end of the transmission shaft cylinder is equipped with a docking shaft fixed to the inner ring of the bearing, and the docking shaft is clamped with the power output end of the second motor.

[0016] As another improvement of the present application, the installation position of the air guide ring is located on the upper side of the set position after the heat conduction plate is lowered, an air inlet pipe and an air outlet pipe are arranged in the guide channel, and two layers of annular channels communicating with the air inlet pipe and the air outlet pipe are opened in the air guide ring, the air inlet pipe and the air outlet pipe are communicated with the two annular channels respectively, and two groups of air holes communicating with the two annular channels are respectively opened at the upper end and the side end of the air guide ring.

[0017] As another improvement of the present application, electric guide rails are installed at the bottom ends of the first motor and the second motor. The electric guide rails are used to adjust the distance between the second motor and the first motor, thereby adjusting the separation of the transmission gear ring and the transmission gear and the detected position of the semiconductor wafer. The electric guide rails can be started to work when the sub-turntable at the set position rotates to match the position of the detection structure.

[0018] As another improvement of the present application, a sliding hole matching the power structure is opened between the upper reaction chamber and the lower equipment chamber, a sealing groove matching the main disk body is opened on the inner wall of the upper reaction chamber, the sealing groove covers the movable range of the main disk body, and a sealing gasket is laid at the bottom end of the main disk body.

[0019] As another improvement of the present application, an auxiliary detection system is also included, the auxiliary detection system includes a processor installed on the vapor deposition device, and the processor is connected to a control module, a detection module, a data processing module and an image recognition module;

[0020] The control module is provided with a power control unit and an airflow control unit. The power control unit is used to control the rotation of the main plate and the auxiliary turntable; the airflow control unit is used to control the air intake and exhaust of the vapor deposition equipment and the air exchange of the air exchange pipe; the auxiliary turntable and the power structure are both connected to the control module signal;

[0021] The data processing module is used to collect and process data from the spectrum detector and the laser detector, convert the detection results into readable numerical values ​​and image information, and store them;

[0022] The detection module is used to analyze the film thickness data on the semiconductor wafer according to the data processing results, and the detection module is connected to a data analysis unit and a spectrometer;

[0023] The image recognition module is used to calibrate the rotation angle of the main plate body and identify the position of the loading plate and the auxiliary turntable. A graphic acquisition device connected to the image recognition module signal is installed in the upper reaction chamber.

[0024] In summary, this solution realizes real-time monitoring and precise control of the semiconductor thin film deposition process. By precisely controlling deposition parameters and real-time monitoring of film quality, it ensures the uniformity and quality of thin film deposition, easily improves production efficiency, and facilitates automatic detection of film thickness and quality, which saves manpower. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a stereogram of the first and second embodiments of the present application;

[0026] Figure 2 It is a cross-sectional view of the first and second embodiments of the present application;

[0027] Figure 3 for Figure 2 The structural diagram at A in the middle;

[0028] Figure 4 It is a partial structural schematic diagram of the movable platform and the mounting groove when they are connected in the first and second embodiments of the present application;

[0029] Figure 5 It is a three-dimensional diagram of the loading plate and the power structure part of the first and second embodiments of the present application;

[0030] Figure 6 It is a cross-sectional view of the loading plate of the first and second embodiments of the present application;

[0031] Figure 7 This is a system block diagram of the second implementation mode of this application.

[0032] Description of the numbers in the figure:

[0033] 1 Vapor deposition equipment, 2 loading plate, 21 main plate body, 22 inner rotating shaft, 23 transmission gear ring, 24 docking joint, 25 air guide ring, 3 auxiliary turntable, 31 lifting platform, 32 heat transfer plate, 33 heater, 4 power structure, 41 first motor, 42 second motor, 5 detection structure, 51 movable table, 52 spectrum detector, 53 laser detector, 6 ventilation pipe. DETAILED DESCRIPTION

[0034] The following describes two implementation modes of the present application in detail with reference to the accompanying drawings.

[0035] The first implementation method:

[0036] Figure 1 - Figure 6A device for real-time detection of the thickness of a semiconductor wafer surface film is shown, comprising a vapor deposition device 1, the vapor deposition device 1 comprising an upper reaction chamber and a lower equipment chamber, an electrode plate is installed on the top of the upper reaction chamber, an air inlet pipe is installed in the middle of the electrode plate, an exhaust pipe is installed on the lower side of the side end of the upper reaction chamber, the air inlet pipe is connected to an external air path system, and the exhaust pipe is connected to an external exhaust system;

[0037] A loading plate 2 is rotatably connected inside the vapor deposition device 1. The loading plate 2 includes a main plate body 21. An inner rotating shaft 22 is rotatably connected to the middle of the main plate body 21. The outer end of the bottom of the inner rotating shaft 22 is connected to a transmission gear ring 23 through a bearing. The transmission gear ring 23 is fixedly connected to the main plate body 21. A plurality of mounting grooves distributed in a circumference are opened on the main plate body 21.

[0038] A secondary turntable 3 is installed in the installation groove, and the secondary turntable 3 includes a lifting platform 31 rotatably connected to the installation groove, a transmission belt is connected between the lifting platform 31 and the inner rotating shaft 22, a main gear is installed at the top of the inner rotating shaft 22, and a plurality of rollers matching the lifting platform 31 are arranged on the outer side of the inner rotating shaft 22, and the transmission belt is installed between the roller and the fixed end of the lifting platform 31, and a secondary gear meshing with the main gear is installed on the top of the roller, and the roller is rotatably connected to the inside of the main disk body 21, and a heat conducting plate 32 is installed on the power telescopic end of the lifting platform 31, and a heater 33 is installed at the bottom of the heat conducting plate 32;

[0039] A power structure 4 matching the loading tray 2 is installed in the lower equipment room, and the power structure 4 includes a first motor 41 and a second motor 42. A transmission gear matching the transmission gear ring 23 is installed at the power output end of the first motor 41, and the power output end of the second motor 42 is fixedly connected to the inner rotating shaft 22;

[0040] A detection structure 5 matching the auxiliary turntable 3 is installed in the vapor deposition device 1. The detection structure 5 includes a movable table 51. A lifting rod is connected between the movable table 51 and the upper reaction chamber. A spectrum detector 52 is installed on the movable table 51. A through hole is opened on the movable table 51. A laser detector 53 fixedly connected to the vapor deposition device 1 is inserted into the through hole. The laser detector 53 is used for rough detection of the thickness of the deposited film on the semiconductor crystal; when the loading plate 2 rotates, the laser detector 53 intermittently performs single-point detection on multiple semiconductor wafers at the auxiliary turntables 3; the laser detector 53 of this scheme adopts the laser triangulation method of the prior art for detection; the laser detector 53 is integrated with a laser transmitter and a receiving device;

[0041] The spectrum detector 52 is used for accurate detection of the semiconductor wafer film on the heat-conducting disk 32. When the spectrum detector 52 is working, the detection structure 5 descends to the installation groove, and the heat-conducting disk 32 descends to the set position. At the same time, the power output end of the first motor 41 is separated from the transmission gear ring 23; the spectrum detector 52 adopts the reflection spectroscopy method for detection, and the movable platform 51 is equipped with a fiber optic probe, a light source generating device, a lens and a reflector.

[0042] A sealing butt ring covering the installation groove is installed at the bottom end of the movable platform 51. After the movable platform 51 is lowered to the installation groove, the opening of the installation groove is closed by the sealing butt ring.

[0043] The inner rotating shaft 22 includes a transmission shaft cylinder rotatably connected to the main disk body 21 , and a docking shaft fixed to the inner ring of the bearing is installed at the bottom end of the transmission shaft cylinder, and the docking shaft is clamped with the power output end of the second motor 42 .

[0044] A docking joint 24 is installed in the middle of the main disk body 21, and a ventilation pipe 6 rotatably connected to the docking joint 24 is passed through the air intake pipe. The ventilation pipe 6 is connected to an external air pump. A guide channel is opened between the installation groove and the input end of the transmission gear ring 23, and an air guide ring 25 matching the guide channel is installed in the installation groove.

[0045] The installation position of the air guide ring 25 is located on the upper side of the set position after the heat conduction plate 32 is lowered. An air inlet pipe and an air outlet pipe are arranged in the guide channel. Two layers of annular channels communicating with the air inlet pipe and the air outlet pipe are opened in the air guide ring 25. The air inlet pipe and the air outlet pipe are respectively communicated with the two annular channels. Two groups of air holes communicating with the two annular channels are respectively opened at the upper end and the side end of the air guide ring 25.

[0046] An electric guide rail is installed at the bottom end of the second motor 42, and the electric guide rail is used to adjust the position of the second motor 42, thereby adjusting the transmission gear ring 23 to separate from the transmission gear. The electric guide rail can be turned on and operated when the auxiliary turntable 3 at the set position rotates to match the position of the detection structure 5.

[0047] A sliding hole matching the power structure 4 is provided between the upper reaction chamber and the lower equipment chamber, a sealing groove matching the main disk body 21 is provided on the inner wall of the upper reaction chamber, the sealing groove covers the movable range of the main disk body 21, and a sealing pad is laid at the bottom end of the main disk body 21.

[0048] When the vapor deposition device 1 of the present embodiment is working, the semiconductor wafer on the heat-conducting plate 32 rotates with the main plate body 21, and the heater 33 is turned on to heat the heat-conducting plate 32;

[0049] During the rotation of the main plate 21, each auxiliary turntable 3 is periodically matched with the detection structure 5 in turn and stopped for 1-3 seconds, so that the laser detector 53 performs single-point detection on the semiconductor wafer; after all the semiconductor wafers placed on the auxiliary turntables 3 are detected;

[0050] Furthermore, by controlling the second motor 42 to work, the auxiliary turntable 3 is rotated to adjust the rotation angle of the semiconductor crystal, thereby adjusting the detection point of the semiconductor wafer by the laser detector 53 or the spectrum detector 52;

[0051] Optionally, two electric guide rails may be driven to work simultaneously, so that the power structure 4 drives the loading plate 2 to move as a whole, thereby adjusting the position of the semiconductor crystal and adjusting the horizontal position of the detection point of the semiconductor wafer by the laser detector 53 or the spectrum detector 52;

[0052] When it is detected that the film thickness on the semiconductor wafer reaches the set value or other set events are detected, the upper reaction chamber is stopped from being inlet, the heater 33 is stopped from working, and then the movable platform 51 is driven to descend to the installation slot, so that the opening of the installation slot is closed, and then the lifting platform 31 is controlled to descend so that the heat conducting plate 32 descends to the set position, and at the same time, the power output end of the first motor 41 is separated from the transmission gear ring 23 by controlling the electric guide rail;

[0053] Then, the air pump connected to the ventilation pipe 6 is turned on to allow the gas phase in the installation tank to be ventilated, so as to reduce the influence of the gas phase on the light beam emitted by the spectrum detector 52;

[0054] Then, the second motor 42 is independently controlled to work, so that the inner shaft 22 drives the auxiliary turntable 3 to rotate. At this time, the rotation of the semiconductor crystal is detected by the spectrum detector 52. During the detection process, the second motor 42 and the position of the loading plate 2 are driven by the electric guide rail to achieve horizontal adjustment of the position of the semiconductor crystal, so that the spectrum detector 52 can fully detect the semiconductor wafer.

[0055] After the detection, the movable table 51 and the heat conducting plate 32 are reset, and the gas supply is restored to continue the thin film vapor deposition operation.

[0056] This embodiment realizes real-time rough detection during thin film vapor deposition process and facilitates accurate detection of closed semiconductor wafers.

[0057] Second implementation method:

[0058] Figure 7 As shown, it also includes an auxiliary detection system, which includes a processor installed on the vapor deposition device 1, and the processor is connected to a control module, a detection module, a data processing module and an image recognition module;

[0059] The control module is provided with a power control unit and an airflow control unit. The power control unit is used to control the rotation of the main plate body 21 and the auxiliary turntable 3; specifically, the rotation speed and direction of the main plate body 21 and the auxiliary turntable 3 are controlled to ensure the correct position of the semiconductor wafer and the accuracy of detection.

[0060] The airflow control unit is used to control the air intake and exhaust of the vapor deposition device 1 and the ventilation of the ventilation pipe 6 to ensure the stability of the detection environment and the detection accuracy; the auxiliary turntable 3 and the power structure 4 are both connected to the control module signal;

[0061] The image recognition module is used to calibrate the rotation angle of the main plate body 21 and identify the position of the loading plate 2 and the auxiliary turntable 3;

[0062] The data processing module is used to collect and process data from the spectrum detector and the laser detector, convert the detection results into readable numerical values ​​and image information, and store them.

[0063] The detection module is used to analyze the film thickness data on the semiconductor wafer according to the data processing results, and the detection module is connected to a data analysis unit and a spectrometer;

[0064] Spectral detector 52: used to accurately detect the thickness and quality of the semiconductor wafer film on the heat conducting plate 32, and evaluate the film characteristics by analyzing the reflected or transmitted spectral information;

[0065] Laser detector 53: performs single-point detection on semiconductor wafers for rapid positioning and preliminary evaluation of film thickness on the wafer;

[0066] The image recognition module is used to calibrate the rotation angle of the main positioning plate body 21 to ensure the accuracy of detection, identify the position of the loading plate 2 and the auxiliary turntable 3, provide accurate coordinate information for detection, and assist in determining the accuracy of position adjustment.

[0067] During the normal operation of the vapor deposition device 1, the processor receives data from the control module, the detection module, the data processing module and the image recognition module in real time, and performs comprehensive analysis based on the data to ensure the stability of the entire deposition process and the uniformity of the film quality.

[0068] When the semiconductor wafer rotates on the main plate body 21 , the image recognition module monitors the rotation angle of the main plate body 21 in real time, and compares it with the rotation angle fed back by the second motor 42 or the first motor 41 to detect whether the wafer rotates normally.

[0069] When the semiconductor wafer rotates to the predetermined detection position, the processor controls the laser detector 53 to detect. The laser detector 53 performs single-point detection on the film, quickly locates and preliminarily evaluates the film thickness, and the detection results are fed back to the data processing module;

[0070] The data processing module will collect the data of the laser detector for analysis, convert the test results into readable numerical values ​​or image information, and store and process them. The test will determine whether the film meets the predetermined quality standards based on these data. If it does not meet the standards or the film thickness is deposited to the set value, the control module will control the lifting rod to work, and the loading plate 2 will stop rotating as a whole, so that the movable table 51 corresponds to the position of the corresponding semiconductor wafer, and drive the movable table 51 to descend to cover the upper side of the semiconductor wafer, and the semiconductor wafer will descend into the installation groove, so that the installation groove can independently close the semiconductor wafer, so that the spectrum detector 52 on the movable table 51 can perform accurate detection;

[0071] When the spectrum detector 52 detects, the semiconductor wafer rotates under the driving action of the inner shaft 22, thereby realizing multi-point detection. During the rotation, the auxiliary electric guide rail drives the loading plate 2 to move as a whole, thereby realizing the spectrum detector 52 to fully detect the thin film on the semiconductor wafer;

[0072] The data processing module will collect the data of the spectrum detector 52 for analysis and convert the detection results into readable numerical values ​​or image information;

[0073] Then, the detection module determines whether the film reaches the predetermined quality standard based on these data. If not, the control module adjusts the operation of the vapor deposition equipment 1 and the deposition parameters, such as airflow, temperature, etc., to optimize the deposition process.

[0074] After the deposition process is completed, the processor will generate a detailed report based on the final inspection results, including key parameters such as film thickness, uniformity, and defects. These data can be used for subsequent process optimization and quality control.

[0075] Through the auxiliary detection system of this embodiment, it is possible to fully monitor and accurately detect the thickness of thin film deposition on the semiconductor surface in the vapor deposition device 1, thereby improving the quality and production efficiency of thin film deposition.

[0076] In summary, this solution realizes real-time monitoring and precise control of the semiconductor thin film deposition process. By precisely controlling deposition parameters and real-time monitoring of film quality, it ensures the uniformity and quality of thin film deposition, easily improves production efficiency, and facilitates automatic detection of film thickness and quality, which saves manpower.

[0077] In view of current practical needs, the above-mentioned implementation mode adopted in this application is not limited to the scope of protection. Various changes made within the knowledge scope of technical personnel in this field without departing from the concept of this application still fall within the scope of protection of the present invention.

Claims

1. A device for real-time detection of the thickness of a thin film on a semiconductor wafer surface, comprising a vapor deposition device (1), the vapor deposition device (1) comprising an upper reaction chamber and a lower equipment chamber, an electrode plate being installed on the top of the upper reaction chamber, an air inlet pipe being installed in the middle of the electrode plate, and an exhaust pipe being installed on the lower side of the side end of the upper reaction chamber, characterized in that: The vapor deposition device (1) is rotatably connected to a loading disk (2), the loading disk (2) comprising a main disk body (21), the middle of the main disk body (21) being rotatably connected to an inner rotating shaft (22), the outer end of the bottom of the inner rotating shaft (22) being connected to a transmission gear ring (23) via a bearing, and the transmission gear ring (23) being fixedly connected to the main disk body (21), and the main disk body (21) being provided with a plurality of mounting grooves distributed in a circumference; A butt joint (24) is installed in the middle of the main disk body (21), a ventilation pipe (6) rotatably connected to the butt joint (24) is inserted into the air intake pipe, a flow guide channel is opened between the installation groove and the input end of the transmission gear ring (23), and an air guide ring (25) matching the flow guide channel is installed in the installation groove; A secondary turntable (3) is installed in the installation groove, and the secondary turntable (3) comprises a lifting platform (31) rotatably connected to the installation groove, a transmission belt is connected between the lifting platform (31) and the inner rotating shaft (22), a heat conducting plate (32) is installed on the power telescopic end of the lifting platform (31), and a heater (33) is installed at the bottom end of the heat conducting plate (32); A power structure (4) matching the loading tray (2) is installed in the lower equipment room, the power structure (4) comprising a first motor (41) and a second motor (42), a transmission gear matching the transmission gear ring (23) being installed at the power output end of the first motor (41), and a power output end of the second motor (42) being fixedly connected to the inner rotating shaft (22); The vapor deposition device (1) is provided with a detection structure (5) matching the auxiliary turntable (3), the detection structure (5) comprising a movable table (51), a lifting rod being connected between the movable table (51) and the upper reaction chamber, a spectrum detector (52) being installed on the movable table (51), a through hole being provided on the movable table (51), and a laser detector (53) fixedly connected to the vapor deposition device (1) being inserted into the through hole.

2. A device for real-time detection of semiconductor wafer surface film thickness according to claim 1, characterized in that: The spectrum detector (52) is used for accurate detection of the semiconductor wafer film on the heat conducting plate (32). When the spectrum detector (52) is in operation, the detection structure (5) descends to the mounting groove, and the heat conducting plate (32) descends to a set position, and at the same time, the power output end of the first motor (41) is separated from the transmission gear ring (23).

3. A device for real-time detection of semiconductor wafer surface film thickness according to claim 2, characterized in that: A sealing docking ring covering the installation groove is installed at the bottom end of the movable platform (51); after the movable platform (51) is lowered to the installation groove, the opening of the installation groove is sealed by the sealing docking ring.

4. A device for real-time detection of semiconductor wafer surface film thickness according to claim 3, characterized in that: The inner rotating shaft (22) comprises a transmission shaft cylinder rotatably connected to the main disk body (21), a docking shaft fixed to the inner ring of the bearing is installed at the bottom end of the transmission shaft cylinder, and the docking shaft is clamped with the power output end of the second motor (42).

5. A device for real-time detection of semiconductor wafer surface film thickness according to claim 4, characterized in that: The installation position of the air guide ring (25) is located above the set position after the heat conducting plate (32) is lowered. An air inlet pipe and an air outlet pipe are arranged in the air guide channel. Two layers of annular channels communicating with the air inlet pipe and the air outlet pipe are opened in the air guide ring (25). The air inlet pipe and the air outlet pipe are respectively communicated with the two annular channels. The upper end and the side end of the air guide ring (25) are respectively provided with two groups of air holes communicating with the two annular channels.

6. A device for real-time detection of semiconductor wafer surface film thickness according to claim 5, characterized in that: The bottom ends of the first motor (41) and the second motor (42) are both equipped with electric guide rails, the electric guide rails being used to adjust the distance between the second motor (42) and the first motor (41), thereby adjusting the separation of the transmission gear ring (23) from the transmission gear and the detected position of the semiconductor wafer, and the electric guide rails can be turned on and operated when the auxiliary turntable (3) at the set position rotates to match the position of the detection structure (5).

7. A device for real-time detection of semiconductor wafer surface film thickness according to claim 6, characterized in that: A sliding hole matching the power structure (4) is provided between the upper reaction chamber and the lower equipment chamber, a sealing groove matching the main disk body (21) is provided on the inner wall of the upper reaction chamber, the sealing groove covers the movable range of the main disk body (21), and a sealing pad is laid at the bottom end of the main disk body (21).

8. A device for real-time detection of semiconductor wafer surface film thickness according to claim 7, characterized in that: It also includes an auxiliary detection system, the auxiliary detection system includes a processor installed on the vapor deposition device (1), and the processor is connected to a control module, a detection module, a data processing module and an image recognition module; The control module is provided with a power control unit and an air flow control unit, the power control unit is used to control the rotation of the main plate (21) and the auxiliary turntable (3); the air flow control unit is used to control the air intake and exhaust of the vapor deposition device (1) and the air exchange of the air exchange pipe (6); the auxiliary turntable (3) and the power structure (4) are both connected to the control module signal; The data processing module is used to collect and process data from the spectrum detector and the laser detector, convert the detection results into readable numerical values ​​and image information, and store them; The detection module is used to analyze the film thickness data on the semiconductor wafer according to the data processing result, and the detection module is connected to a data analysis unit and a spectrometer; The image recognition module is used to calibrate the rotation angle of the main disk body (21) and to identify the position of the loading disk (2) and the auxiliary turntable (3). A graphics acquisition device connected to the image recognition module signal is installed in the upper reaction chamber.

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