Method for Rapid Determination of Chemical Vapor Deposition Parameters

Abstract

The present invention provides a method for quickly determining chemical vapor deposition parameters. When a chemical vapor deposition film is prepared using a main reactant source, a first doping source, and a second doping source, the flow rates of the first doping source and the second doping source are adjusted according to the target concentrations of the first doping element concentration and the second doping element concentration to obtain a process result close to the target concentration. The present invention can greatly improve R&D efficiency, shorten R&D cycle, and save R&D costs by designing several groups of first and second doping source flow rates and collecting their corresponding doping concentrations to quickly determine the first and second doping source flow rates for a specific doping concentration target value.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, and in particular to a method for quickly determining chemical vapor deposition parameters. Background Art

[0002] In the manufacturing process of semiconductor wafers, borophosphosilicate glass (BPSG) film is a widely used semiconductor dielectric layer, which loosens the original ordered network structure of silicon dioxide by introducing boron and phosphorus impurities. Under high temperature conditions, borophosphosilicate glass has a liquid-like reflow ability to a certain extent, thereby improving the hole filling ability of the borophosphosilicate glass dielectric layer and the flatness of the wafer. Borophosphosilicate glass dielectric layers can generally be used for pre-metal dielectrics (PMDs), reflow dielectric layers, passivation dielectric layers, and impurity gettering layers. For the above applications, boron concentration and phosphorus concentration are important film parameters, which have a decisive influence on film properties such as reflow temperature, etching rate, and impurity gettering effect.

[0003] At present, subatmospheric pressure chemical vapor deposition (SACVD) is one of the main processes for forming borophosphosilicate glass thin film structures. It deposits borophosphosilicate glass films under heating by using a mixed gas of triethyl borate (TEB), triethyl phosphate (TEPO), tetraethyl silicate (TEOS) and ozone (O3).

[0004] However, in the process of equipment and process research and development, it is necessary to prepare borophosphosilicate glass films that meet the requirements of boron concentration and phosphorus concentration according to different specific equipment conditions. The same process parameters may produce different process results for different equipment due to equipment differences. For unfamiliar equipment, in order to obtain the same process results, it is necessary to design experiments to re-determine new process parameters. The experimental design and experimental cycle are relatively long, which will consume additional manpower and material costs.

[0005] Therefore, how to quickly determine the process parameter settings such as the doping source flow rate that meet the target boron concentration and phosphorus concentration in the borophosphosilicate glass film under different equipment conditions is an important issue to improve R&D efficiency, shorten the R&D cycle, and save R&D costs.

[0006] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the present invention. Summary of the invention

[0007] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method for quickly determining chemical vapor deposition parameters, so as to solve the problem that the experimental cycle for determining the process parameters corresponding to specific boron and phosphorus concentrations in borophosphosilicate glass in the prior art is long.

[0008] To achieve the above-mentioned object and other related objects, the present invention provides a method for quickly determining chemical vapor deposition parameters, wherein when a chemical vapor deposition film is prepared using a main reactant source, a first doping source, and a second doping source, the flow rates of the first doping source and the second doping source are adjusted according to the target concentrations of the first doping element concentration and the second doping element concentration, comprising the following steps:

[0009] Setting the flow rates of N groups of the first doping sources, where N is a natural number greater than 2, wherein there is no linear relationship between the flow rates of at least n groups of the first doping sources, and n is a natural number less than or equal to N and greater than 2;

[0010] Fixing the flow rates of the main reactant source and the second doping source to obtain the first doping element concentration of the chemical vapor deposition film prepared at the flow rate of the first doping source in each group;

[0011] Marking N groups of coordinate points of the first doping element concentration corresponding to the first doping source flow rate in a plane rectangular coordinate system, and connecting the coordinate points in pairs to form a plurality of first-type connecting lines;

[0012] defining a horizontal line where a target concentration of the first doping element concentration is located as a first-type horizontal line, defining intersections of each of the first-type connecting lines and the first-type horizontal line as first-type intersections, and each of the first-type intersections divides the first-type horizontal line into a plurality of first-type line segments;

[0013] Setting the horizontal coordinate of the midpoint of the shortest first-type line segment among the plurality of first-type line segments as the set flow rate of the first doping source;

[0014] Setting the flow rates of the second doping sources in groups M, where M is a natural number greater than 2, wherein there is no linear relationship between the flow rates of at least m groups of the second doping sources, and m is a natural number less than or equal to M and greater than 2;

[0015] Fixing the flow rates of the main reactant source and the first doping source to obtain the second doping element concentration of the chemical vapor deposition film prepared at each group of the second doping source flow rates;

[0016] Marking M groups of coordinate points of the second doping element concentration corresponding to the flow rate of the second doping source in a plane rectangular coordinate system, and connecting the coordinate points in pairs to form a plurality of second-type connecting lines;

[0017] defining a horizontal line where a target concentration of the second doping element concentration is located as a second-type horizontal line, defining intersections of each of the second-type connecting lines and the second-type horizontal line as a second-type intersection, and each of the second-type intersections divides the second-type horizontal line into a plurality of second-type line segments;

[0018] The horizontal coordinate of the midpoint of the second type line segment with the shortest length among the plurality of the second type line segments is set as the set flow rate of the second doping source.

[0019] Optionally, the method for rapidly determining chemical vapor deposition parameters comprises sub-atmospheric pressure chemical vapor deposition.

[0020] Optionally, the chemical vapor deposition film includes a borophosphosilicate glass film, the first doping element includes boron, and the second doping element includes phosphorus.

[0021] Optionally, the main reactant source includes tetraethyl silicate and ozone.

[0022] Optionally, the first doping source includes triethyl borate, and the second doping source includes triethyl phosphate.

[0023] Optionally, the method for determining the first doping element concentration or the second doping element concentration of the chemical vapor deposition film prepared under the first doping source flow rate or the second doping source flow rate in each group includes: secondary ion mass spectrometry, X-ray fluorescence spectroscopy or Fourier infrared spectroscopy.

[0024] Optionally, three groups of flow rates of the first doping sources are set, wherein there is no linear relationship between the flow rates of the first doping sources; and three groups of flow rates of the second doping sources are set, wherein there is no linear relationship between the flow rates of the second doping sources.

[0025] Optionally, four groups of flow rates of the first doping sources are set, wherein there is no linear relationship between the flow rates of at least three groups of the first doping sources; and four groups of flow rates of the second doping sources are set, wherein there is no linear relationship between the flow rates of at least three groups of the second doping sources.

[0026] Optionally, when the length of the shortest first-type line segment among multiple first-type line segments differs from the length of the first-type line segment on its adjacent side by less than 5%, the horizontal coordinate of the first-type intersection on the adjacent side is set to the set flow rate of the first doping source.

[0027] Optionally, when the length of the shortest second-type line segment among multiple second-type line segments differs from the length of the second-type line segment on its adjacent side by less than 5%, the horizontal coordinate of the second-type intersection on the adjacent side is set to the set flow rate of the second doping source.

[0028] As described above, the method provided by the present invention can quickly determine the chemical vapor deposition parameters. By designing several groups of first and second doping source flow rates and collecting their corresponding doping concentrations, the first and second doping source flow rates for a specific doping concentration target value can be quickly determined, which can greatly improve R&D efficiency, shorten the R&D cycle, and save R&D costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 Shown is a flow chart of a method for quickly determining chemical vapor deposition parameters provided in Embodiment 1 of the present invention.

[0030] Figure 2 Shown is a schematic diagram of a plane rectangular coordinate system for determining the flow rate of triethyl borate provided in Example 1 of the present invention.

[0031] Figure 3 Shown is a schematic diagram of a plane rectangular coordinate system for determining the flow rate of triethyl phosphate provided in Example 1 of the present invention.

[0032] Figure 4 It shows a schematic diagram of a plane rectangular coordinate system for determining the flow rate of triethyl borate provided in Example 2 of the present invention.

[0033] Figure 5 It shows a schematic diagram of a plane rectangular coordinate system for determining the flow rate of triethyl phosphate provided in Example 2 of the present invention. DETAILED DESCRIPTION

[0034] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0035] For ease of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0036] In the context of the present invention, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0037] See also Figures 1 to 5 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the form, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0038] Embodiment 1

[0039] See also Figures 1 to 3 This embodiment provides a method for quickly determining chemical vapor deposition parameters. When a chemical vapor deposition film is prepared using a main reactant source, a first doping source, and a second doping source, the flow rates of the first doping source and the second doping source are adjusted according to target concentrations of the first doping element concentration and the second doping element concentration, comprising the following steps:

[0040] Setting the flow rates of N groups of the first doping sources, where N is a natural number greater than 2, wherein there is no linear relationship between the flow rates of at least n groups of the first doping sources, and n is a natural number less than or equal to N and greater than 2;

[0041] Fixing the flow rates of the main reactant source and the second doping source to obtain the first doping element concentration of the chemical vapor deposition film prepared at the flow rate of the first doping source in each group;

[0042] Marking N groups of coordinate points of the first doping element concentration corresponding to the first doping source flow rate in a plane rectangular coordinate system, and connecting the coordinate points in pairs to form a plurality of first-type connecting lines;

[0043] defining a horizontal line where a target concentration of the first doping element concentration is located as a first-type horizontal line, defining intersections of each of the first-type connecting lines and the first-type horizontal line as first-type intersections, and each of the first-type intersections divides the first-type horizontal line into a plurality of first-type line segments;

[0044] Setting the horizontal coordinate of the midpoint of the shortest first-type line segment among the plurality of first-type line segments as the set flow rate of the first doping source;

[0045] Setting the flow rates of the second doping sources in groups M, where M is a natural number greater than 2, wherein there is no linear relationship between the flow rates of at least m groups of the second doping sources, and m is a natural number less than or equal to M and greater than 2;

[0046] Fixing the flow rates of the main reactant source and the first doping source to obtain the second doping element concentration of the chemical vapor deposition film prepared at each group of the second doping source flow rates;

[0047] Marking M groups of coordinate points of the second doping element concentration corresponding to the flow rate of the second doping source in a plane rectangular coordinate system, and connecting the coordinate points in pairs to form a plurality of second-type connecting lines;

[0048] defining a horizontal line where a target concentration of the second doping element concentration is located as a second-type horizontal line, defining intersections of each of the second-type connecting lines and the second-type horizontal line as a second-type intersection, and each of the second-type intersections divides the second-type horizontal line into a plurality of second-type line segments;

[0049] The horizontal coordinate of the midpoint of the second type line segment with the shortest length among the plurality of the second type line segments is set as the set flow rate of the second doping source.

[0050] In some examples, in this embodiment, during the chemical vapor deposition process, a main reactant source, a first doping source, and a second doping source are used to prepare a chemical vapor deposition film, and the flow rates of the first doping source and the second doping source are adjusted according to the target concentrations of the first doping element concentration and the second doping element concentration. Optionally, in this embodiment, the method for quickly determining chemical vapor deposition parameters includes sub-atmospheric pressure chemical vapor deposition (SACVD). In other implementation cases of the present invention, the method for quickly determining chemical vapor deposition parameters may also include other methods for quickly determining chemical vapor deposition parameters such as atmospheric pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, and low pressure chemical vapor deposition. It should be noted that the present invention is mainly to determine the reaction gas flow rate required to achieve the target concentration value of the corresponding doping element on an unfamiliar device (i.e., a device used for the first time), while other deposition parameters, such as deposition temperature, refer to existing parameters. In other words, when the present invention applies existing deposition process parameters to unfamiliar deposition equipment, the existing deposition parameters are adjusted at the lowest cost to obtain new parameters that are more suitable for unfamiliar equipment, and finally the desired film is prepared. Therefore, other parameters that are not involved in the adjustment are not described in this embodiment. In the present invention, since the adjusted parameters are limited to the reaction gas flow rate (the gas flow rate is usually adjusted outside the device), there is basically no hardware operation adjustment involved on the device, which can effectively reduce damage to the device.

[0051] In some examples, the chemical vapor deposition film includes a borophosphosilicate glass (BPSG) film, the first doping element includes boron, and the second doping element includes phosphorus. Optionally, the main reactant source includes tetraethyl silicate (TEOS) and ozone (O3); the first doping source includes triethyl borate (TEB), and the second doping source includes triethyl phosphate (TEPO). In other embodiments of the present invention, the prepared chemical vapor deposition film can also be other dielectric layer or conductive layer films, and two different doping sources are added to participate in the reaction to achieve doping of two different doping elements.

[0052] When preparing thin film materials with two doping elements such as borophosphosilicate glass (BPSG) films, two corresponding doping sources are usually used to introduce appropriate amounts of doping elements to achieve the target doping concentration. For borophosphosilicate glass films, the flow rates of triethyl borate (TEB) and triethyl phosphate (TEPO) determine the boron and phosphorus concentrations in the resulting borophosphosilicate glass, respectively. For different chemical vapor deposition equipment, for example, if an existing borophosphosilicate glass deposition process is established on a new SACVD device, even if the existing process parameters on other existing machines are completely copied to the new machine, the process results may deviate due to slight differences between different equipment. For different new machines, new target values ​​for boron concentration and phosphorus concentration may also be introduced due to different process requirements. In addition, since the boron concentration and phosphorus concentration in the borophosphosilicate glass film will also affect each other, changes in the flow rates of triethyl borate and triethyl phosphate will affect the deposition rate of the borophosphosilicate glass film, thereby partially offsetting their effects on changes in boron concentration and phosphorus concentration. Therefore, in the existing doping concentration debugging process, it is often necessary to constantly try different flow ratios of triethyl borate and triethyl phosphate, which has a long experimental cycle and consumes huge R&D costs.

[0053] In step 1), refer to Figure 1 The S1 step and Figure 2 , setting the flow rates of N groups of the first doping sources, where N is a natural number greater than 2, wherein there is no linear relationship between the flow rates of at least n groups of the first doping sources, and n is a natural number less than or equal to N and greater than 2.

[0054] In some examples, in this embodiment, three groups of flow rates of the first doping sources are set, wherein there is no linear relationship between the flow rates of the first doping sources, or the flow rates are not on the same straight line. Optionally, in this embodiment, N=n=3 is set, that is, three groups of flow rates of the first doping sources are set that have no linear relationship with each other.

[0055] In step 2), refer to Figure 1 The S2 step and Figure 2, fixing the flow rates of the main reactant source and the second doping source, and obtaining the first doping element concentration of the chemical vapor deposition film prepared at the flow rate of the first doping source in each group.

[0056] In some examples, the method for determining the concentration of the first doping element of the chemical vapor deposition film prepared under each group of the first doping source flow rate includes: secondary ion mass spectrometry (SIMS), X-ray fluorescence spectroscopy (XRF) or Fourier transform infrared spectroscopy (FTIR), etc. The first doping source includes triethyl borate (TEB), and the second doping source includes triethyl phosphate (TEPO). From Table 1, it can be seen that the three groups of triethyl borate flow rates set in this embodiment and the corresponding boron concentration in the borophosphosilicate glass film obtained after the growth is completed, as well as the three groups of triethyl phosphate flow rates set in the embodiment and the corresponding phosphorus concentration in the borophosphosilicate glass film obtained after the growth is completed.

[0057] Table 1

[0058] TEB (g / min) TEPO (g / min) Boron concentration Phosphorus concentration 0.609 0.171 4.494% 4.377% 0.786 0.220 6.227% 4.560% 0.880 0.255 6.419% 5.608%

[0059] In step 3), refer to Figure 1 The S3 step and Figure 2 , mark N groups of coordinate points of the first doping element concentration corresponding to the first doping source flow rate in a plane rectangular coordinate system, and connect each of the coordinate points in pairs to form a plurality of first-type connecting lines. Figure 2 As shown, in a plane rectangular coordinate system, according to the data in Table 1, three coordinate points A, B and C are marked respectively, which respectively represent the first doping element concentration of the chemical vapor deposition film prepared at different first doping source flow rates obtained by measuring the concentration in Table 1. By connecting the three coordinate points A, B and C in pairs, three first-type connecting lines AB, AC and BC are obtained. The first-type connecting line is a straight line that can be extended infinitely.

[0060] In step 4), refer to Figure 1 The S4 step and Figure 2 , the horizontal line where the target concentration of the first doping element concentration is located is defined as a first-type horizontal line, the intersection points of each first-type connecting line and the first-type horizontal line are defined as first-type intersection points, and each first-type intersection point separates the first-type horizontal line into multiple first-type line segments. Figure 2 As shown, the target boron concentration is 5.5%, the first-class horizontal line is represented by L1, and three first-class connecting lines AB, AC and BC intersect the first-class horizontal line L1 at first-class intersection points D, E and F. The first-class intersection points D, E and F form two first-class line segments DE and EF respectively.

[0061] In step 5), refer to Figure 1The S5 step and Figure 2 , the horizontal coordinate of the midpoint of the shortest first-type line segment among the plurality of first-type line segments is set as the set flow rate of the first doping source. Figure 2 As shown in FIG. 1 , of the two first-type line segments DE and EF, the length of the first-type line segment EF is the shortest, so the horizontal coordinate of the midpoint G of EF is set as the set flow rate of the first doping source. Figure 2 It can be seen that the horizontal coordinate of G is about 0.730g / min.

[0062] In step 6), refer to Figure 1 The S6 steps and Figure 3 , set the flow rate of the second doping source in M ​​groups, where M is a natural number greater than 2, wherein there is no linear relationship between the flow rates of at least m groups of the second doping source, and m is a natural number less than or equal to M and greater than 2.

[0063] In some examples, in this embodiment, three groups of flow rates of the second doping source are set, wherein there is no linear relationship between the flow rates of the second doping sources. Optionally, in this embodiment, M=m=3 is set, that is, three groups of flow rates of the second doping source are set that have no linear relationship with each other.

[0064] In step 7), refer to Figure 1 The S7 steps and Figure 3 , fixing the flow rates of the main reactant source and the first doping source, and obtaining the second doping element concentration of the chemical vapor deposition film prepared at each group of the second doping source flow rates.

[0065] In some examples, the method for determining the concentration of the second doping element of the chemical vapor deposition film prepared under each group of the second doping source flow rate includes: secondary ion mass spectrometry (SIMS), X-ray fluorescence spectroscopy (XRF) or Fourier transform infrared spectroscopy (FTIR), etc. The first doping source includes triethyl borate (TEB), and the second doping source includes triethyl phosphate (TEPO). From Table 1, it can be seen that the three groups of triethyl borate flow rates set in this embodiment and the corresponding boron concentration in the borophosphosilicate glass film obtained after the growth is completed, as well as the three groups of triethyl phosphate flow rates set in the embodiment and the corresponding phosphorus concentration in the borophosphosilicate glass film obtained after the growth is completed.

[0066] In step 8), refer to Figure 1 The S8 steps and Figure 3 , mark M groups of coordinate points of the second doping element concentration corresponding to the second doping source flow rate in a plane rectangular coordinate system, and connect each of the coordinate points in pairs to form a plurality of second-type lines. Figure 3As shown, in the plane rectangular coordinate system, according to the data in Table 1, three coordinate points H, I and J are marked respectively, which respectively represent the second doping element concentration of the chemical vapor deposition film prepared at different second doping source flow rates obtained by measuring the concentration in Table 1. By connecting the three coordinate points H, I and J in pairs, three second-type connecting lines HI, IJ and HJ are obtained. The second-type connecting line is a straight line that can be infinitely extended.

[0067] In step 9), refer to Figure 1 The S9 steps and Figure 3 , the horizontal line where the target concentration of the second doping element concentration is located is defined as a second-type horizontal line, the intersection of each second-type connecting line and the second-type horizontal line is defined as a second-type intersection point, and each second-type intersection point separates the second-type horizontal line into a plurality of second-type line segments. Figure 3 As shown, the target phosphorus concentration is 3.5%, the second type horizontal line is represented by L2, and three second type lines HI, IJ and HJ intersect with the second type horizontal line L2 at the first type intersection points K, L and M. The second type intersection points K, L and M form two first type line segments KL and LM respectively.

[0068] In step 10), refer to Figure 1 The S10 steps and Figure 3 , the horizontal coordinate of the midpoint of the shortest second-type line segment among the plurality of second-type line segments is set as the set flow rate of the second doping source. Figure 3 As shown, of the two first-type line segments KL and LM, the second-type line segment LM is the shortest, so the horizontal coordinate of the midpoint N of LM is set as the set flow rate of the second doping source. Figure 2 It can be obtained that the horizontal coordinate of N is about 0.148g / min.

[0069] In some examples, the above steps show that when the target boron concentration is 5.5% and the phosphorus concentration is 3.5%, the estimated set flow rate of triethyl borate is 0.730 g / min, and the estimated set flow rate of triethyl phosphate is 0.148 g / min. In the borophosphosilicate glass film actually grown, the boron concentration is 5.560% and the phosphorus concentration is 3.458%, which are basically close to the target values ​​of the boron concentration and phosphorus concentration required by the process. Compared with the prior art, which requires repeated attempts at different flow ratios of triethyl borate and triethyl phosphate, this embodiment greatly reduces the number of experimental designs and improves R&D efficiency.

[0070] In some examples, when the length of the shortest first-type line segment among the plurality of first-type line segments differs from the length of the first-type line segment on its adjacent side by less than 5%, the horizontal coordinate of the first-type intersection point on the adjacent side is set to the set flow rate of the first doping source; when the length of the shortest second-type line segment among the plurality of second-type line segments differs from the length of the second-type line segment on its adjacent side by less than 5%, the horizontal coordinate of the second-type intersection point on the adjacent side is set to the set flow rate of the second doping source. Figure 2 and Figure 3 For example, if Figure 2 In the example, the length difference between line segments DE and EF is less than 5%. At this time, the horizontal coordinate of the intersection point E shared by line segments DE and EF can be set as the set flow rate of the first doping source, that is, triethyl borate; if Figure 3 In the figure, the length difference between the line segments KL and LM is less than 5%. At this time, the horizontal coordinate of the intersection L shared by the line segments KL and LM can be set as the set flow rate of the second doping source, ie, triethyl phosphate.

[0071] The method for quickly determining chemical vapor deposition parameters provided in this embodiment can quickly determine the first and second doping source flow rates for a specific doping concentration target value by designing several groups of first and second doping source flow rates and collecting their corresponding doping concentrations, thereby improving R&D efficiency, shortening the R&D cycle, and saving R&D costs.

[0072] Embodiment 2

[0073] See also Figure 4 and 5 , this embodiment provides a method for quickly determining chemical vapor deposition parameters, which is different from the first embodiment in that in this embodiment, four groups of flow rates of the first doping source and the second doping source are set, and there is no linear relationship between the four groups of flow rates of the first doping source and the second doping source. In this embodiment, the first doping source includes triethyl borate (TEB), and the second doping source includes triethyl phosphate (TEPO). The boron concentration and phosphorus concentration in the borophosphosilicate glass film grown by four groups of triethyl borate flow rates and triethyl phosphate flow rates are measured respectively.

[0074] In some examples, such as Figure 4 As shown, in the plane rectangular coordinate system, according to each group of flow and its corresponding measured concentration data, four coordinate points A, B, C and D are marked respectively, and by connecting the four coordinate points A, B, C and D in pairs, four first-class connecting lines AB, BC, CD and AD are obtained. The first-class connecting line is a straight line that can be extended infinitely.

[0075] In some examples, such as Figure 4As shown, the target boron concentration is 6.0%, the first-class horizontal line is represented by L1, and four first-class connecting lines AB, BC, CD and AD intersect the first-class horizontal line L1 at first-class intersection points E, F, G, H, I and J. The first-class intersection points E, F, G, H, I and J form five first-class line segments EF, FG, GH, HI and IJ respectively.

[0076] In some examples, such as Figure 4 As shown, among the five first-type line segments EF, FG, GH, HI and IJ, the length of the first-type line segment HI is the shortest, so the horizontal coordinate of the midpoint K of HI is set as the set flow rate of the first doping source.

[0077] In some examples, such as Figure 5 As shown, in the plane rectangular coordinate system, according to each group of flow and its corresponding measured concentration data, four coordinate points L, M, N and O are marked respectively, and by connecting the four coordinate points L, M, N and O in pairs, four second-class connecting lines LM, MN, NO and LO are obtained. The second-class connecting line is a straight line that can be infinitely extended.

[0078] In some examples, such as Figure 5 As shown, the target boron concentration is 3.0%, the second-type horizontal line is represented as L2, and four second-type connecting lines, LM, MN, NO and LO, intersect with the second-type horizontal line L2 at second-type intersection points P, Q, R, S, T and U. The second-type intersection points P, Q, R, S, T and U form five second-type line segments PQ, QR, RS, ST and TU, respectively.

[0079] In some examples, such as Figure 5 As shown, among the five second-type line segments PQ, QR, RS, ST and TU, the length of the second-type line segment QR is the shortest, so the horizontal coordinate of the midpoint V of QR is set as the set flow rate of the second doping source. According to the set flow rates of the first doping source and the second doping source obtained above, chemical vapor deposition of boron phosphorus silicon glass film can be performed, and a boron concentration and phosphorus concentration close to those required by the process can be obtained. Since a larger number of groups of flow rates and corresponding concentration data of the first doping source and the second doping source are introduced, the results of this embodiment will be more accurate than those of embodiment one. In some other examples, the number of groups can be more, and the number of experiments can be more than one. When the experiment is multiple times, the set flow value obtained from the previous experiment can be used as one of the sets of values ​​for the next experiment, which can not only effectively verify the results of the previous experiment, but also obtain flow data closer to the ideal target value through further experiments.

[0080] Other implementation methods of the method for quickly determining chemical vapor deposition parameters in this embodiment are the same as those in Embodiment 1. Please refer to the description in Embodiment 1 for details, which will not be repeated for the purpose of brevity.

[0081] In summary, the present invention provides a method for quickly determining chemical vapor deposition parameters. When a chemical vapor deposition film is prepared using a main reactant source, a first doping source, and a second doping source, the flow rates of the first doping source and the second doping source are adjusted according to the target concentrations of the first doping element concentration and the second doping element concentration, comprising the following steps: setting the flow rates of N groups of the first doping source, N being a natural number greater than 2, wherein there is no linear relationship between the flow rates of at least n groups of the first doping source, and n being a natural number less than or equal to N and greater than 2; fixing the flow rates of the main reactant source and the second doping source to obtain the first doping element concentration of the chemical vapor deposition film prepared under the flow rates of each group of the first doping source; marking the coordinate points of the first doping element concentration corresponding to the flow rates of the N groups of the first doping source in a plane rectangular coordinate system, and connecting each of the coordinate points in pairs to form a plurality of first-class connecting lines; defining the horizontal line where the target concentration of the first doping element concentration is located as a first-class horizontal line, defining the intersection of each of the first-class connecting lines and the first-class horizontal line as a first-class intersection, and each of the first-class intersections as the first-class water The horizontal line is divided into a plurality of first-class line segments; the horizontal coordinate of the midpoint of the shortest first-class line segment among the plurality of first-class line segments is set as the set flow rate of the first doping source; the flow rates of the second doping sources of the M groups are set, M is a natural number greater than 2, wherein there is no linear relationship between the flow rates of at least m groups of the second doping sources, and m is a natural number less than or equal to M and greater than 2; the flow rates of the main reactant source and the first doping source are fixed to obtain the second doping element concentration of the chemical vapor deposition film prepared under the flow rates of the second doping sources of each group; the coordinate points of the second doping element concentration corresponding to the flow rates of the second doping sources of the M groups are marked in the plane rectangular coordinate system, and each of the coordinate points is connected in pairs to form a plurality of second-class connecting lines; the horizontal line where the target concentration of the second doping element concentration is located is defined as a second-class horizontal line, and the intersection points of each second-class connecting line and the second-class horizontal line are defined as second-class intersection points, and each second-class intersection point divides the second-class horizontal line into a plurality of second-class line segments; the horizontal coordinate of the midpoint of the shortest second-class line segment among the plurality of second-class line segments is set as the set flow rate of the second doping source. The present invention designs several groups of first and second doping source flow rates and collects their corresponding doping concentrations to quickly determine the first and second doping source flow rates for a specific doping concentration target value, which can greatly improve R&D efficiency, shorten the R&D cycle, and save R&D costs.

[0082] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for quickly determining chemical vapor deposition parameters, characterized in that: When a chemical vapor deposition film is prepared using a main reactant source, a first doping source, and a second doping source, adjusting the flow rates of the first doping source and the second doping source according to target concentrations of the first doping element concentration and the second doping element concentration comprises the following steps: Setting the flow rates of N groups of the first doping sources, where N is a natural number greater than 2, wherein there is no linear relationship between the flow rates of at least n groups of the first doping sources, and n is a natural number less than or equal to N and greater than 2; Fixing the flow rates of the main reactant source and the second doping source to obtain the first doping element concentration of the chemical vapor deposition film prepared at the flow rate of the first doping source in each group; Marking N groups of coordinate points of the first doping element concentration corresponding to the first doping source flow rate in a plane rectangular coordinate system, and connecting the coordinate points in pairs to form a plurality of first-type connecting lines; defining a horizontal line where a target concentration of the first doping element concentration is located as a first-type horizontal line, defining intersections of each of the first-type connecting lines and the first-type horizontal line as first-type intersections, and each of the first-type intersections divides the first-type horizontal line into a plurality of first-type line segments; Determine the horizontal coordinate of the midpoint of the shortest first-type line segment among the plurality of first-type line segments as the set flow rate of the first doping source corresponding to the target doping concentration; Setting the flow rates of the second doping sources in groups M, where M is a natural number greater than 2, wherein there is no linear relationship between the flow rates of at least m groups of the second doping sources, and m is a natural number less than or equal to M and greater than 2; Fixing the flow rates of the main reactant source and the first doping source to obtain the second doping element concentration of the chemical vapor deposition film prepared at each group of the second doping source flow rates; Marking M groups of coordinate points of the second doping element concentration corresponding to the flow rate of the second doping source in a plane rectangular coordinate system, and connecting the coordinate points in pairs to form a plurality of second-type connecting lines; defining a horizontal line where a target concentration of the second doping element concentration is located as a second-type horizontal line, defining intersections of each of the second-type connecting lines and the second-type horizontal line as a second-type intersection, and each of the second-type intersections divides the second-type horizontal line into a plurality of second-type line segments; The horizontal coordinate of the midpoint of the shortest second-type line segment among the plurality of second-type line segments is determined as the set flow rate of the second doping source corresponding to the target doping concentration.

2. The method for rapidly determining chemical vapor deposition parameters according to claim 1, characterized in that: The chemical vapor deposition includes subatmospheric pressure chemical vapor deposition.

3. The method for rapidly determining chemical vapor deposition parameters according to claim 1, characterized in that: The chemical vapor deposition film includes a borophosphosilicate glass film, the first doping element includes boron, and the second doping element includes phosphorus.

4. The method for rapidly determining chemical vapor deposition parameters according to claim 3, characterized in that: The main reactant sources include tetraethyl silicate and ozone.

5. The method for rapidly determining chemical vapor deposition parameters according to claim 3, characterized in that: The first doping source includes triethyl borate, and the second doping source includes triethyl phosphate.

6. The method for rapidly determining chemical vapor deposition parameters according to claim 1, characterized in that: The method for determining the first doping element concentration or the second doping element concentration of the chemical vapor deposition film prepared under the first doping source flow rate or the second doping source flow rate of each group includes: secondary ion mass spectrometry, X-ray fluorescence spectroscopy or Fourier transform infrared spectroscopy.

7. The method for rapidly determining chemical vapor deposition parameters according to claim 1, characterized in that: The flow rates of three groups of the first doping sources are set, wherein there is no linear relationship between the flow rates of the first doping sources; and the flow rates of three groups of the second doping sources are set, wherein there is no linear relationship between the flow rates of the second doping sources.

8. The method for rapidly determining chemical vapor deposition parameters according to claim 1, characterized in that: The flow rates of four groups of the first doping sources are set, wherein there is no linear relationship between the flow rates of at least three groups of the first doping sources; the flow rates of four groups of the second doping sources are set, wherein there is no linear relationship between the flow rates of at least three groups of the second doping sources.

9. The method for rapidly determining chemical vapor deposition parameters according to claim 1, characterized in that: When the length difference between the shortest first-type line segment among multiple first-type line segments and the first-type line segment on its adjacent side is less than 5%, the horizontal coordinate of the first-type intersection on the adjacent side is determined as the set flow rate of the first doping source corresponding to the target doping concentration.

10. The method for rapidly determining chemical vapor deposition parameters according to claim 1, characterized in that: When the length of the shortest second-type line segment among multiple second-type line segments differs from the length of the second-type line segment on its adjacent side by less than 5%, the horizontal coordinate of the second-type intersection on the adjacent side is determined as the set flow rate of the second doping source corresponding to the target doping concentration.

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