Electrostatic adsorption chuck, workpiece table and machine table
The electrostatic adsorption chuck with adjustable voltage control addresses the challenge of adsorbing wafers with contaminants by dynamically adjusting the electrostatic field strength, ensuring stable wafer adsorption and preventing slippage in semiconductor manufacturing.
Patent Information
- Application Number
- CN202411587244.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-08
- Publication Date
- 2024-12-10
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
Existing electrostatic adsorption chucks struggle to stably adsorb wafers with contaminants on the back due to the need for increased voltage, leading to inefficiencies and potential wafer slippage during semiconductor manufacturing processes.
An electrostatic adsorption chuck with adjustable voltage control through a voltage divider circuit and selectively coupled conductive connectors, allowing for dynamic adjustment of the electrostatic field strength based on wafer conditions.
Stable adsorption of wafers with contaminants is achieved by adjusting the electrostatic field strength, enhancing adsorption force and preventing wafer slippage, thereby improving positioning stability during semiconductor processing.
Smart Images

Figure CN119108330A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of semiconductor manufacturing technology, and in particular relates to an electrostatic adsorption chuck, a workpiece table and a machine table. Background Art
[0002] Electrostatic adsorption chucks are widely used in the manufacturing process of semiconductor devices. Their main function is to fix the wafer by electrostatic adsorption.
[0003] During the application of the electrostatic adsorption chuck, a voltage is applied to the electrostatic electrode in the electrostatic adsorption chuck so that the electrostatic electrode generates static electricity to adsorb the wafer. When there are contaminants on the back of the wafer, it is necessary to increase the voltage applied to the electrostatic electrode to increase the strength of the static electricity generated by the electrostatic electrode, otherwise the wafer cannot be stably adsorbed. Summary of the invention
[0004] The object of the present invention is to provide an electrostatic adsorption chuck, a workpiece table and a machine table, aiming to make the voltage applied to the electrostatic electrode of the electrostatic adsorption chuck adjustable so that the electrostatic adsorption chuck can stably adsorb wafers with contaminants on the back.
[0005] To achieve the above-mentioned objectives, the present invention provides an electrostatic adsorption chuck, comprising: a chuck body, an electrostatic electrode, a plurality of conductive connecting parts, and a power supply; the electrostatic electrode is arranged inside the chuck body; at least part of the conductive connecting parts are selectively coupled or decoupled with the electrostatic electrode; the power supply comprises a power supply body and a voltage divider circuit, the voltage divider circuit comprises at least two voltage divider resistors, and at least two of the voltage divider resistors are connected in series with each other; the power supply body is connected to all the conductive connecting parts through the voltage divider circuit, and each of the conductive connecting parts is connected to the same voltage divider resistor.
[0006] Optionally, one of the plurality of conductive connectors remains coupled to the electrostatic electrode, and the remaining conductive connectors are selectively coupled to or decoupled from the electrostatic electrode.
[0007] Optionally, the conductive connector includes a first conductive connector and a second conductive connector, and the conductive connector includes a first connection end and a second connection end; the first connection end and the second connection end of the first conductive connector are respectively electrically connected to the electrostatic electrode so that the first conductive connector remains coupled to the electrostatic electrode; the first connection end of the second conductive connector is electrically connected to the electrostatic electrode, and the second connection end of the second conductive connector is selectively electrically connected to or disconnected from the electrostatic electrode; when the second connection end of the second conductive connector is connected to the electrostatic electrode, the second conductive connector is coupled to the electrostatic electrode, and when the second connection end of the second conductive connector is disconnected from the electrostatic electrode, the second conductive connector is decoupled from the electrostatic electrode.
[0008] To achieve the above objectives, the present invention also provides a workpiece table, comprising a motion mechanism, a base and an electrostatic adsorption chuck as described in any of the preceding items; the electrostatic adsorption chuck is arranged on the base; the motion mechanism is connected to the base and is used to drive the base to move in a preset direction.
[0009] Optionally, the workpiece stage further includes a sensor, which is disposed on the base and / or the chuck body and is used to measure the distance between a wafer disposed on the chuck body and the chuck body.
[0010] To achieve the above-mentioned object, the present invention further provides a machine, comprising a chamber and an electrostatic adsorption chuck as described in any of the preceding items, wherein the electrostatic adsorption chuck is disposed in the chamber.
[0011] Optionally, the machine platform includes any one of vapor deposition equipment, etching equipment, photolithography equipment, and measurement equipment.
[0012] Compared with the prior art, the electrostatic adsorption chuck, workpiece table and machine table of the present invention have the following advantages: the aforementioned electrostatic adsorption chuck includes a chuck body, an electrostatic electrode, a plurality of conductive connectors and a power supply; the electrostatic electrode is arranged inside the chuck body; at least part of the conductive connectors are selectively coupled or decoupled with the electrostatic electrode; the power supply includes a power supply body and a voltage divider circuit, the voltage divider circuit includes at least two voltage divider resistors, and at least two of the voltage divider resistors are connected in series with each other; the power supply body is connected to all the conductive connectors through the voltage divider circuit, and each of the conductive connectors is connected to the same voltage divider resistor. When the electrostatic adsorption chuck is used to adsorb the wafer, the number of conductive connectors coupled to the electrostatic electrode is adjusted according to the state of the wafer, thereby adjusting the voltage transmitted to the electrostatic electrode so that the electrostatic electrode generates an electric field of sufficient strength to stably adsorb the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The accompanying drawings are used to better understand the present invention and shall not constitute improper limitations of the present invention.
[0014] Figure 1 It is a schematic structural diagram of an electrostatic adsorption chuck provided according to an embodiment of the present invention.
[0015] Figure 2 The figure is a schematic diagram of the circuit structure of the power supply of the electrostatic adsorption chuck provided according to one embodiment of the present invention.
[0016] [The illustration marks are explained as follows]: 100 - electrostatic adsorption chuck, 110 - chuck body, 120 - electrostatic electrode, 130 - conductive connector, 130a - first conductive connector, 130b - second conductive connector, 131 - first connection end, 132 - second connection end, 140 - power supply, 141 - power supply body, 142 - voltage divider circuit, 142a - first voltage divider resistor, 142b - second voltage divider resistor, 200 - wafer. DETAILED DESCRIPTION
[0017] The following is an explanation of the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the present embodiment only illustrate the basic concept of the present invention in a schematic manner, and only the components related to the present invention are shown in the figure instead of being drawn according to the number, shape and size of the components in the actual implementation. The type, quantity and proportion of each component in the actual implementation can be a random change, and the component layout type may also be more complicated.
[0018] In addition, each embodiment of the following description has one or more technical features, but this does not mean that the user of the present invention must implement all the technical features in any embodiment at the same time, or can only implement part or all of the technical features in different embodiments separately. In other words, under the premise of being possible to implement, those skilled in the art can selectively implement part or all of the technical features in any embodiment according to the disclosure of the present invention and according to the design specifications or implementation requirements, or selectively implement a combination of part or all of the technical features in multiple embodiments, thereby increasing the flexibility of the implementation of the present invention.
[0019] As used in this specification, the singular forms "one", "an" and "the" include plural objects, and the plural form "multiple" includes more than two objects, unless the content clearly indicates otherwise. As used in this specification, the term "or" is usually used in the sense of including "and / or", unless the content clearly indicates otherwise, and the terms "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection. It can be a mechanical connection or an electrical connection. It can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. Relational terms such as the terms "first", "second", etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor do they indicate or imply relative importance or implicitly indicate the number of technical features indicated. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0020] In order to make the purpose, advantages and features of the present invention more clear, the present invention is further described in detail below with reference to the accompanying drawings. It should be noted that the drawings are all in very simplified form and in non-precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. The same or similar reference numerals in the drawings represent the same or similar components.
[0021] Figure 1 FIG. 1 is a schematic diagram showing the structure of an electrostatic adsorption chuck 100 provided in an embodiment of the present invention. Figure 1 As shown, the electrostatic adsorption chuck 100 includes a chuck body 110, an electrostatic electrode 120 and a plurality of conductive connecting members 130. The electrostatic electrode 120 is disposed inside the chuck body 110 in any suitable manner. At least a portion of the plurality of conductive connecting members 130 is selectively coupled or decoupled with the electrostatic electrode 120.
[0022] The electrostatic adsorption chuck 100 can adsorb the wafer 200 during the semiconductor production process. When working, it can be connected to all the conductive connecting members 130 at the same time through a power supply 140, and the number of the conductive connecting members 130 coupled to the electrostatic electrode 120 can be adjusted according to the state of the wafer 200, so that the voltage applied to the electrostatic electrode 120 can be adjusted, thereby adjusting the strength of the electrostatic field generated by the electrostatic electrode 120, thereby adjusting the adsorption force of the electrostatic adsorption chuck 100. For example, when the wafer 200 is flat and there is no contaminant on the back of the wafer 200, a smaller adsorption force can make the electrostatic adsorption chuck 100 stably adsorb the wafer 200, so that fewer conductive connectors 130, such as one conductive connector 130, can be coupled with the electrostatic electrode 120 at this time, so that the voltage applied to the electrostatic electrode 120 is smaller, avoiding energy waste; when there are contaminants on the back of the wafer 200 or the wafer 200 is warped, a larger adsorption force is required to make the electrostatic adsorption chuck 100 stably adsorb the wafer 200. In this case, more conductive connectors 130, specifically at least two conductive connectors 130, can be coupled with the electrostatic electrode 120, so that the voltage applied to the electrostatic electrode 120 is larger, so that the electrostatic electrode 120 generates a sufficiently large electrostatic field, so that the electrostatic adsorption chuck 100 can stably adsorb the wafer 200. Here, the power supply 140 can be a power supply device with a constant output voltage.
[0023] In an optional embodiment, a portion of the conductive connectors 130 and the electrostatic electrode 120 are always kept in a coupled state, and another portion of the conductive connectors 130 are selectively coupled or decoupled from the electrostatic electrode 120. For example, one conductive connector 130 and the electrostatic electrode 120 are always kept in a coupled state, and the remaining conductive connectors 130 are selectively coupled or decoupled from the electrostatic electrode 120.
[0024] Herein, the conductive connection member 130 that is always coupled with the electrostatic electrode 120 is referred to as a first conductive connection member 130 a , and the conductive connection member 130 that is selectively coupled with the electrostatic electrode 120 and then decoupled is referred to as a second conductive connection member 130 b .
[0025] In an exemplary embodiment, the number of the first conductive connection member 130a is one, and the number of the second conductive connection member 130b is also one.
[0026] It can be understood that any of the conductive connecting members 130 includes a first connecting end 131 and a second connecting end 132. For the first conductive connecting member 130a, the first connecting end 131 and the second connecting end 132 thereof are respectively kept in an electrically connected state with the electrostatic electrode 120. For the second conductive connector 130b, at least one of its first connection end 131 and the second connection end 132 is selectively electrically connected to or disconnected from the electrostatic electrode 120. For example, the first connection end 131 of the second conductive connector 130b is maintained in an electrically connected state with the electrostatic electrode 120, and the second connection end 132 is selectively electrically connected to or disconnected from the electrostatic electrode 120. In this way, when the second connection end 132 of the second conductive connector 130b is electrically connected to the electrostatic electrode 120, the second conductive connector 130b is coupled to the electrostatic electrode 120, and when the second connection end 132 of the second conductive connector 130b is electrically disconnected from the electrostatic electrode 120, the second conductive connector 130b is decoupled from the electrostatic electrode 120.
[0027] Optionally, the electrostatic adsorption chuck 100 further includes the power supply 140 .
[0028] Optionally, the power supply 140 includes: Figure 2 Specifically, the power supply 140 includes a power supply body 141 and a voltage divider circuit 142 as shown. Figure 2 As shown in the voltage divider circuit 142 , the power source body 141 is electrically connected to all the conductive connecting members 130 via the voltage divider circuit 142 .
[0029] The voltage divider circuit 142 includes more than two voltage divider resistors, and the more than two voltage divider resistors are connected in series. Figure 2 The voltage-dividing circuit 142 is shown to include two voltage-dividing resistors. In other examples, the number of the voltage-dividing resistors may be more than two.
[0030] by Figure 2As shown in the example, the two voltage-dividing resistors are respectively the first voltage-dividing resistor 142a and the second voltage-dividing resistor 142b, and the first connection end 131 and the second connection end 132 of the conductive connector 130 are respectively connected to the opposite ends of the second voltage-dividing resistor 142b. The resistance value of the first voltage-dividing resistor 142a is recorded as R1, the resistance value of the second voltage-dividing resistor 142b is recorded as R2, and the voltage provided by the power supply body 141 is recorded as U0, then the output voltage U1 output by the voltage-dividing circuit 142 through each of the conductive connectors 130 is equal to U0×R2 / (R2+R1). In this way, the voltage transmitted to the electrostatic electrode 120 through each of the conductive connectors 130 coupled to the electrostatic electrode 120 is equal to U0×R2 / (R2+R1). In practice, the specific resistance values of the first voltage-dividing resistor 142a and the second voltage-dividing resistor 142b are determined according to actual needs. The power supply body 141 can be a municipal power supply system or a battery.
[0031] Furthermore, an embodiment of the present invention further provides a machine, which includes a chamber and the electrostatic adsorption chuck 100 as described above. The electrostatic adsorption chuck 100 is disposed in the chamber.
[0032] The machine may be equipment used in a semiconductor production process, such as a measuring device, more specifically a scanning electron microscope; a vapor deposition device, more specifically a physical vapor deposition device; an etching device; or a photolithography device.
[0033] The advantages of using the electrostatic adsorption chuck 100 are explained by taking the scanning electron microscope as an example. Specifically, when the electrostatic adsorption chuck 100 is set in the chamber of the scanning electron microscope to carry the wafer 200, even if the back of the wafer 200 is contaminated, the voltage applied to the electrostatic electrode 120 can be increased by increasing the number of the conductive connectors 130 coupled to the electrostatic electrode 120, thereby increasing the adsorption force of the electrostatic adsorption chuck 100, so that the electrostatic adsorption chuck 100 can effectively adsorb the wafer 200 and improve the positioning stability of the wafer 200. In this way, when the electrostatic adsorption chuck 100 is controlled to drive the wafer 200 to move in the chamber to find a measurement position point or a centering pattern, there will be no slip problem.
[0034] In addition, an embodiment of the present invention further provides a workpiece stage, which includes a motion mechanism, a base, and the electrostatic adsorption chuck 100 as described above. The electrostatic adsorption chuck 100 is arranged on the base. The motion mechanism is connected to the base and is configured to drive the base to move along a preset direction, so as to drive the electrostatic adsorption chuck 100 and the wafer 200 adsorbed thereon to move along the preset direction.
[0035] Furthermore, the workpiece stage may further include a sensor (not shown in the figure), which may be disposed on the chuck body 110 and / or the base, and is configured to measure the distance between the wafer 200 disposed on the chuck body 110 and the adsorption surface of the chuck body 110, and the distance may be used to determine the shape of the wafer 200. The shape of the wafer 200 is any one of a flat state, a convex state, and a concave state.
[0036] The embodiment of the present invention does not specifically limit the specific setting method of the sensor, and it can refer to the prior art, as long as the sensor is capable of measuring the distance between different positions of the wafer 200 and the chuck body 110, so that an operator or a control unit can judge the shape of the wafer 200 based on the distance from different positions of the wafer 200 to the chuck body 110.
[0037] For some processes of semiconductor manufacturing, it is required that the warpage of the wafer 200 entering the machine is less than a preset value. Therefore, by setting the sensor to detect the distance between different positions of the wafer 200 and the chuck body 110, and then judging the shape of the wafer 200, it is possible to timely find out whether the shape of the wafer 200 located on the electrostatic adsorption chuck 100 meets the requirements. It can be understood that when the shape of the wafer 200 does not meet the requirements, the operator can increase the number of the conductive connectors 130 coupled to the electrostatic electrode 120 to enhance the adsorption force of the electrostatic adsorption chuck 100, so as to adsorb the wafer 200 flat.
[0038] Although the present invention is disclosed as above, it is not limited thereto. Those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.
Claims
1. An electrostatic adsorption chuck, It is characterized in that include: Chuck body; An electrostatic electrode is disposed inside the chuck body; a plurality of conductive connections, at least some of which are selectively coupled to or decoupled from the electrostatic electrode; and, The power supply comprises a power supply body and a voltage divider circuit, wherein the voltage divider circuit comprises at least two voltage divider resistors, and at least two of the voltage divider resistors are connected in series with each other; the power supply body is connected to all the conductive connecting parts through the voltage divider circuit, and each of the conductive connecting parts is connected to the same voltage divider resistor.
2. The electrostatic adsorption chuck according to claim 1, It is characterized in that One of the plurality of conductive connections remains coupled to the electrostatic electrode, and the remaining conductive connections are selectively coupled to or decoupled from the electrostatic electrode.
3. The electrostatic adsorption chuck according to claim 1 or 2, It is characterized in that The conductive connection member includes a first conductive connection member and a second conductive connection member, and the conductive connection member includes a first connection end and a second connection end; The first connection end and the second connection end of the first conductive connection member are electrically connected to the electrostatic electrode respectively, so that the first conductive connection member and the electrostatic electrode remain coupled; The first connection end of the second conductive connector is electrically connected to the electrostatic electrode, and the second connection end of the second conductive connector is selectively electrically connected to or disconnected from the electrostatic electrode; when the second connection end of the second conductive connector is connected to the electrostatic electrode, the second conductive connector is coupled to the electrostatic electrode, and when the second connection end of the second conductive connector is disconnected from the electrostatic electrode, the second conductive connector is decoupled from the electrostatic electrode.
4. A workpiece table, It is characterized in that It comprises a motion mechanism, a base and an electrostatic adsorption chuck as described in any one of claims 1 to 3; the electrostatic adsorption chuck is arranged on the base; the motion mechanism is connected to the base and is used to drive the base to move along a preset direction.
5. The workpiece table according to claim 4, It is characterized in that The workpiece stage further includes a sensor, which is disposed on the base and / or the chuck body and is used to measure the distance between the wafer disposed on the chuck body and the chuck body.
6. A machine, It is characterized in that It comprises a chamber and an electrostatic adsorption chuck as claimed in any one of claims 1 to 3, wherein the electrostatic adsorption chuck is arranged in the chamber.
7. The machine according to claim 6, It is characterized in that The equipment includes any one of vapor deposition equipment, etching equipment, photolithography equipment, and measurement equipment.
Citation Information
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Method for processing a semiconductor wafer and semiconductor fabrication apparatus using the method
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Electrostatic chuck device and wafer electrostatic adsorption method
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