Power amplifier and electronic equipment

Abstract

The invention discloses a power amplifier and electronic equipment, and relates to the technical field of semiconductor devices, the power amplifier comprises a main transistor, an auxiliary transistor, a bias circuit, an input matching circuit and an output matching circuit; the gate end of the main transistor is connected with the input matching circuit, the drain end of the main transistor is connected with the output matching circuit, and the gate end and the drain end of the main transistor are respectively connected with corresponding bias circuits; the source end of the main transistor is connected with the drain end of the auxiliary transistor; the source end of the auxiliary transistor is grounded, and the grid end of the auxiliary transistor is set to enable the auxiliary transistor to be normally open; the voltage drop after the auxiliary transistor is turned on is not less than 50% of the voltage drop of the main transistor. An additional auxiliary transistor is cascaded to a main transistor to form a cascode-like structure, so that the adjustment of an impedance point is realized. The voltage of the main transistor is divided through the auxiliary transistor, so that the voltage leakage of the main transistor can be reduced, the power density is reduced, and the power matching difficulty of the device is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a power amplifier and an electronic device. Background Art

[0002] As a key microwave component in communication and radar transceiver systems, the performance of the entire system is closely related to the output power, efficiency, and reliability of the power amplifier. Therefore, how to improve the power, efficiency, and other performance of the amplifier has become a major design challenge.

[0003] Compared with devices made with other types of processes, GaN HEMT (High electron mobility transistor) devices have higher electron saturation velocity, better breakdown voltage, and larger bandgap width. GaN HEMT devices can withstand high power density, have strong anti-interference ability, and are more resistant to high temperatures. They have significant advantages in the design of large bandwidth and high efficiency amplifiers. They are widely used in radar, communications and other fields.

[0004] However, when the GaN HEMT device is at low power, the load impedance will be biased towards the high reflection area, which greatly increases the difficulty of matching the output matching circuit, resulting in its power, efficiency, and bandwidth performance indicators failing to reach ideal values. Therefore, how to provide a technical solution that can ensure the high frequency and high efficiency characteristics of the device while keeping the device impedance point away from the high reflection area of ​​the Smith chart is an urgent problem to be solved by those skilled in the art. Summary of the invention

[0005] An object of the present invention is to provide a power amplifier which can keep the device impedance point away from the high reflection area of ​​the Smith chart while ensuring the characteristics of high frequency and high efficiency; another object of the present invention is to provide an electronic device which can keep the device impedance point away from the high reflection area of ​​the Smith chart while ensuring the characteristics of high frequency and high efficiency.

[0006] In order to solve the above technical problems, the present invention provides a power amplifier, comprising a main transistor, an auxiliary transistor, a bias circuit, an input matching circuit and an output matching circuit;

[0007] The gate terminal of the main transistor is connected to the input matching circuit, the drain terminal of the main transistor is connected to the output matching circuit, and the gate terminal of the main transistor and the drain terminal of the main transistor are respectively connected to corresponding bias circuits; the source terminal of the main transistor is connected to the drain terminal of the auxiliary transistor; the source terminal of the auxiliary transistor is grounded, and the gate terminal of the auxiliary transistor is set so that the auxiliary transistor is normally open;

[0008] The voltage drop of the auxiliary transistor after being turned on is not less than 50% of the voltage drop of the main transistor.

[0009] Optionally, a voltage drop of the auxiliary transistor after being turned on is not less than a voltage drop of the main transistor.

[0010] Optionally, the main transistor is a GaN HEMT device, and the auxiliary transistor is a GaN HEMT device.

[0011] Optionally, the main transistor and the auxiliary transistor are integrated on the same substrate.

[0012] Optionally, the gate width of the auxiliary transistor is not less than the gate width of the main transistor.

[0013] Optionally, the gate terminal of the auxiliary transistor is grounded.

[0014] Optionally, the gate terminal of the auxiliary transistor is connected to one end of a resistor, and the other end of the resistor is grounded.

[0015] Optionally, the output matching circuit includes a capacitor having one end connected to the drain end of the main transistor, the other end of the capacitor serving as the output end, the other end of the capacitor connected to one end of an inductor, and the other end of the inductor grounded.

[0016] Optionally, the gate terminal of the auxiliary transistor is vacant.

[0017] Optionally, comprising a plurality of the main transistors, a plurality of the input matching circuits and a plurality of the output matching circuits;

[0018] The gate terminal of each main transistor is connected to the corresponding input matching circuit, the drain terminal of each main transistor is connected to the corresponding output matching circuit, and the gate terminal and drain terminal of each main transistor are respectively connected to the corresponding bias circuit;

[0019] The source terminals of the plurality of main transistors are connected to the drain terminal of the same auxiliary transistor.

[0020] An electronic device comprises the power amplifier as described in any one of the above items.

[0021] A power amplifier provided by the present invention comprises a main transistor, an auxiliary transistor, a bias circuit, an input matching circuit and an output matching circuit; the gate end of the main transistor is connected to the input matching circuit, the drain end of the main transistor is connected to the output matching circuit, the gate end of the main transistor and the drain end of the main transistor are respectively connected to corresponding bias circuits; the source end of the main transistor is connected to the drain end of the auxiliary transistor; the source end of the auxiliary transistor is grounded, and the gate end of the auxiliary transistor is set so that the auxiliary transistor is normally open; the voltage drop of the auxiliary transistor after turning on is not less than 50% of the voltage drop of the main transistor.

[0022] By cascading additional auxiliary transistors to the main transistor to form a cascode-like structure, the impedance point can be adjusted. By connecting auxiliary transistors in series and dividing the voltage of the main transistor through the auxiliary transistor, the leakage voltage of the main transistor can be reduced, thereby reducing the power density, thereby reducing the power matching difficulty of the device, making the impedance of the main transistor close to 50 ohms, which is easy to match. At the same time, since the auxiliary transistor connected in series with the source of the main transistor is in a normally open state, it will not affect the efficiency and gain of the main transistor power amplifier, which can not only ensure that the output load impedance reflection coefficient is reduced, but also reduce the difficulty of designing the output matching circuit.

[0023] This embodiment also provides an electronic device, which also has the above-mentioned beneficial effects, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] FIG1 is a schematic diagram of the structure of a power amplifier in the prior art;

[0026] FIG2 is a diagram showing the position of load impedance points corresponding to the power amplifier in FIG1 ;

[0027] FIG3 is a circuit diagram of a first power amplifier provided by an embodiment of the present invention;

[0028] Figure 4 is a load impedance point position diagram corresponding to the power amplifier in FIG3;

[0029] Figure 5 A circuit diagram of a second power amplifier provided by an embodiment of the present invention;

[0030] Figure 6 A circuit diagram of a third power amplifier provided by an embodiment of the present invention;

[0031] Figure 7 for Figure 6 The load impedance point location diagram corresponding to the medium power amplifier;

[0032] Figure 8 A circuit diagram of a fourth power amplifier provided by an embodiment of the present invention;

[0033] Fig. 9 This is a circuit diagram of a fifth power amplifier provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0034] The core of the present invention is to provide a power amplifier. In the prior art, GaN HEMT has the characteristics of low-power, high-efficiency PA, but the impedance of the low-power device is very large, often located in the high-reflection area of ​​the Smith chart, and the impedance is extremely sensitive, which makes the input and output matching network design of the power amplifier extremely difficult, and there is a problem of difficulty in matching design.

[0035] Please refer to Figures 1 and 2. Figure 1 is a schematic diagram of the structure of a power amplifier in the prior art; Figure 2 is a diagram of the load impedance point position corresponding to the power amplifier in Figure 1. Referring to Figures 1 and 2, the bias circuit provides a DC short circuit and an RF open circuit working environment for the transistor, and the input matching circuit and the output matching circuit match the transistor impedance point to 50Ω. The main defects of the prior art are: when designing a high-voltage, low-power power amplifier, due to the very high load impedance at the output end, it gradually moves from the 50Ω easy-to-match area to the open circuit point of the Smitch circle, making the imaginary part value of the output impedance point much larger than the real part value, which will increase the Q value of the output matching network, and at the same time make the impedance point extremely sensitive to power and efficiency, resulting in greater difficulty in designing the output matching network, narrowing the bandwidth, and other problems. As can be seen from Figure 2, when the output power of the prior art is 30dBm, the load impedance deviates from the Smitch open circuit point and deviates from the center point of 50Ω, which will increase the difficulty of matching, and the real part of the maximum power point is only 1.15 to the imaginary part.

[0036] The power amplifier provided by the present invention includes a main transistor, an auxiliary transistor, a bias circuit, an input matching circuit and an output matching circuit; the gate terminal of the main transistor is connected to the input matching circuit, the drain terminal of the main transistor is connected to the output matching circuit, and the gate terminal of the main transistor and the drain terminal of the main transistor are respectively connected to corresponding bias circuits; the source terminal of the main transistor is connected to the drain terminal of the auxiliary transistor; the source terminal of the auxiliary transistor is grounded, and the gate terminal of the auxiliary transistor is set so that the auxiliary transistor is normally open; the voltage drop of the auxiliary transistor after turning on is not less than 50% of the voltage drop of the main transistor.

[0037] By cascading additional auxiliary transistors to the main transistor to form a cascode-like structure, the impedance point can be adjusted. By connecting auxiliary transistors in series and dividing the voltage of the main transistor through the auxiliary transistor, the leakage voltage of the main transistor can be reduced, thereby reducing the power density, thereby reducing the power matching difficulty of the device, making the impedance of the main transistor close to 50 ohms, which is easy to match. At the same time, since the auxiliary transistor connected in series with the source of the main transistor is in a normally open state, it will not affect the efficiency and gain of the main transistor power amplifier, which can not only ensure that the output load impedance reflection coefficient is reduced, but also reduce the difficulty of designing the output matching circuit.

[0038] In order to enable those skilled in the art to better understand the scheme of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0039] Embodiment 1

[0040] Please refer to FIG. 3 , which is a circuit diagram of a first power amplifier provided by an embodiment of the present invention.

[0041] Referring to FIG3 , in an embodiment of the present invention, the power amplifier includes a main transistor, an auxiliary transistor, a bias circuit, an input matching circuit and an output matching circuit; the gate terminal of the main transistor is connected to the input matching circuit, the drain terminal of the main transistor is connected to the output matching circuit, the gate terminal of the main transistor and the drain terminal of the main transistor are respectively connected to corresponding bias circuits; the source terminal of the main transistor is connected to the drain terminal of the auxiliary transistor; the source terminal of the auxiliary transistor is grounded, and the gate terminal of the auxiliary transistor is set so that the auxiliary transistor is normally open; the voltage drop of the auxiliary transistor after turning on is not less than 50% of the voltage drop of the main transistor.

[0042] The main transistor is the main working transistor, so the gate end of the main transistor is specifically the control end of the entire semiconductor device, which needs to be connected to the input matching circuit; the drain end of the main transistor is usually the output end of the semiconductor device, which needs to be connected to the output matching circuit. The source end of the main transistor needs to be connected to the drain end of the auxiliary transistor, thereby forming a cascode-like structure, and the impedance point is adjusted by the auxiliary transistor. Unlike the cascode structure, the input and output in this embodiment are connected to the gate and drain of the same transistor. For the auxiliary transistor, its drain end needs to be connected to the source end of the main transistor, and the source end of the auxiliary transistor needs to be grounded. The auxiliary transistor needs to be in a normally open state. Specifically, when the auxiliary transistor is a depletion-type transistor, the gate end of the auxiliary transistor needs to be vacant or grounded, so that the auxiliary transistor is in a normally open state, and the auxiliary transistor avoids the auxiliary transistor from affecting the efficiency and generation of the power amplifier PA. When the auxiliary transistor is an enhancement-type transistor, its gate-source voltage difference is greater than the threshold voltage.

[0043] In this embodiment, the main transistor may be a GaN HEMT device, and the corresponding auxiliary transistor may also be a GaN HEMT device. Of course, in this embodiment, the main transistor and the auxiliary transistor may also be low-power devices of other structures, and the specific structures of the main transistor and the auxiliary transistor are not specifically limited in this embodiment.

[0044] Furthermore, in this embodiment, when both the main transistor and the auxiliary transistor are GaN HEMT devices, the main transistor and the auxiliary transistor can be integrated on the same substrate, which can effectively increase the integration between the main transistor and the auxiliary transistor and reduce the volume occupied by the power amplifier. Of course, in this embodiment, the main transistor and the auxiliary transistor can also be separated to reduce costs.

[0045] In this embodiment, the voltage drop of the auxiliary transistor after it is turned on is not less than 50% of the voltage drop of the main transistor. The purpose is to ensure that the main transistor has a suitable operating voltage and output power after the voltage of the series main transistor is divided by the setting of the auxiliary transistor. In this embodiment, in the case where the voltage applied to the main transistor is too large, the voltage is divided by a series structure to reduce the leakage voltage of the main transistor, thereby reducing the power density, thereby reducing the power matching difficulty of the device, making the impedance of the main transistor close to 50 ohms, and easy to match. The reason for using a series auxiliary transistor for voltage division instead of a series resistor is that the series resistor will have a large consumption, and the consumption can be effectively reduced by using a series auxiliary transistor.

[0046] Taking the normally-off (depletion-type) transistor as the above-mentioned main transistor and auxiliary transistor as an example, the auxiliary transistor will divide the voltage of the main transistor in series, so after the auxiliary transistor is turned on, both the main transistor and the auxiliary transistor have a voltage drop. In this embodiment, the voltage drop after the auxiliary transistor is turned on needs to be no less than 50% of the voltage drop of the main transistor, so that the auxiliary transistor has sufficient voltage division so that the voltage of the main transistor drops to a preset range, ensuring that the main transistor has a suitable output power. By reducing the power density of the main transistor, the power matching difficulty of the device is reduced.

[0047] Normally, the larger the voltage division of the auxiliary transistor, the better. It is best that the voltage drop of the auxiliary transistor after it is turned on is not less than the voltage drop of the main transistor, so as to ensure that the main transistor has a reasonable power matching difficulty. There are many ways to adjust the voltage division size of the auxiliary transistor. When the main transistor and the auxiliary transistor are integrated on the same substrate, that is, they are prepared by the same substrate material process, the gate width of the auxiliary transistor is usually not less than the gate width of the main transistor. For transistors with the same substrate material, a large gate width means a large current and a large resistance, so the voltage drop is large. Therefore, in this embodiment, the gate width of the auxiliary transistor can be adjusted so that the gate width of the auxiliary transistor is not less than the gate width of the main transistor, thereby ensuring that the main transistor has a reasonable power matching difficulty.

[0048] Under the same preparation process, when the gate width of the auxiliary transistor is not less than the gate width of the main transistor, the equivalent resistance of the auxiliary transistor is usually not less than the equivalent resistance of the main transistor, so that the leakage voltage of the main transistor after voltage division can be within a reasonable range, that is, the output power of the main transistor is guaranteed to be within a reasonable range. When the preparation process of the main transistor is different from that of the auxiliary transistor, its specific gate width needs to be determined according to the actual simulation results, and it is usually necessary to ensure that the gate width of the auxiliary transistor is not less than the gate width of the main transistor. In this embodiment, the specific ratio of the gate width of the main transistor to the gate width of the auxiliary transistor needs to be set according to the actual position of the impedance point, and the impedance point is adjusted by adjusting the ratio of the gate widths of the two.

[0049] Of course, in this embodiment, the voltage division of the auxiliary transistor can also be adjusted by other methods, such as using different preparation processes, auxiliary transistors with different structures, or using different substrate materials to prepare the auxiliary transistor, etc., which are not specifically limited here.

[0050] A power amplifier provided in this embodiment realizes the adjustment of impedance points by forming a cascode-like structure by cascading additional auxiliary transistors in the main transistor. By connecting the auxiliary transistors in series and dividing the voltage of the main transistor by the auxiliary transistors, the leakage voltage of the main transistor can be reduced, thereby reducing the power density, thereby reducing the power matching difficulty of the device, and making the impedance of the main transistor close to 50 ohms, which is easy to match. At the same time, since the auxiliary transistor connected in series with the source of the main transistor is in a normally open state, it will not affect the efficiency and gain of the main transistor power amplifier, which can not only ensure that the output load impedance reflection coefficient is reduced, but also reduce the design difficulty of the output matching circuit.

[0051] The specific structure of a power amplifier provided by the present invention will be described in detail in the following embodiments of the invention.

[0052] Embodiment 2

[0053] Please refer to Figures 4 to 9 , Figure 4 is a load impedance point position diagram corresponding to the power amplifier in FIG3; Figure 5 A circuit diagram of a second power amplifier provided by an embodiment of the present invention; Figure 6 A circuit diagram of a third power amplifier provided by an embodiment of the present invention; Figure 7 for Figure 6 The load impedance point location diagram corresponding to the medium power amplifier; Figure 8 A circuit diagram of a fourth power amplifier provided by an embodiment of the present invention; Fig. 9 This is a circuit diagram of a fifth power amplifier provided by an embodiment of the present invention.

[0054] Different from the above-mentioned invention embodiment, the embodiment of the present invention further defines the specific structure of the power amplifier on the basis of the above-mentioned invention embodiment. The rest of the contents have been described in detail in the above-mentioned invention embodiment and will not be repeated here.

[0055] This embodiment will provide five specific power amplifiers, all of which can ensure that the output load impedance reflection coefficient is reduced and reduce the design difficulty of the output matching circuit. In this embodiment, the auxiliary transistor is specifically a depletion-type transistor. Correspondingly, in order to achieve the purpose of the auxiliary transistor being normally open, in this embodiment, the gate of the auxiliary transistor is specifically set to be grounded, or the gate of the auxiliary transistor is set to be empty.

[0056] The first one, see FIG3 , in this structure, the gate terminal of the auxiliary transistor is grounded. In this structure, the gate terminal of the auxiliary transistor is directly grounded, so that the auxiliary transistor is normally open. Figure 4 ,Will Figure 4 Compared with FIG2 , it can be seen that, under the same 30 dBm output power, the load impedance point of the power amplifier corresponding to the present structure moves toward the 50Ω impedance point compared with the single transistor in the prior art, and the ratio of the real part value of the maximum power point to the imaginary part value is 1.63, which is higher than 1.154 in the prior art.

[0057] The second one, see Figure 5 In this structure, the gate terminal of the auxiliary transistor is connected to one end of the resistor, and the other end of the resistor is grounded. That is, in this structure, the gate terminal of the auxiliary transistor is grounded through a resistor rather than directly grounded. In order to achieve impedance matching in this structure, impedance matching can be achieved mainly by adjusting the ratio of the gate width of the main transistor to the gate width of the auxiliary transistor, assisted by adjusting the resistance value of the above resistor, and playing the same function as the first structure in this embodiment. The added resistor mainly plays the role of providing a bias to the gate terminal of the auxiliary transistor, providing a high-resistance state to the above gate terminal.

[0058] The third one, see Figure 6 In this structure, the output matching circuit includes a capacitor having one end connected to the drain end of the main transistor, the other end of the capacitor is used as the output end, the other end of the capacitor is connected to one end of the inductor, and the other end of the inductor is grounded. In this structure, the gate end of the auxiliary transistor is grounded through a resistor, and the output matching circuit includes a capacitor and an inductor, wherein the drain end of the main transistor is connected to a capacitor, the capacitor is connected to an inductor, the inductor is grounded, and the output ends of the capacitor and the inductor serve as the output end of the main transistor.

[0059] See also Figure 7In this structure, the load can be moved to the 50Ω region mainly by adjusting the gate width ratio of the main transistor and the auxiliary transistor, and the resistance value of the resistor can be adjusted. The grounded inductor is used to move the impedance offset in the inductive area to the capacitive area, so that the load is closer to 50Ω. By adjusting the gate width ratio of the main transistor and the auxiliary transistor, the value of the inductance and resistance to ground can directly achieve a 50Ω load in certain power ranges. In this structure, the value of the capacitor is very large and usually does not participate in matching. This structure mainly uses the inductor to achieve the corresponding matching.

[0060] For the fourth type, see Figure 8 In this structure, the gate terminal of the auxiliary transistor is vacant. The vacant gate terminal of the auxiliary transistor is equivalent to connecting a resistor with infinite resistance to the gate terminal of the auxiliary transistor, providing a high-resistance state to the gate terminal. In this structure, in order to achieve impedance matching, impedance matching can be achieved by adjusting the ratio of the gate width of the main transistor to the gate width of the auxiliary transistor, which plays the same function as the first structure in this embodiment.

[0061] Fifth, see Fig. 9 In this structure, it includes multiple main transistors, multiple input matching circuits and multiple output matching circuits; the gate terminal of each main transistor is connected to the corresponding input matching circuit, the drain terminal of each main transistor is connected to the corresponding output matching circuit, and the gate terminal and drain terminal of each main transistor are respectively connected to the corresponding bias circuit; the source terminals of the multiple main transistors are connected to the drain terminal of the same auxiliary transistor. In this structure, the gate width of the auxiliary transistor usually needs to be no less than the gate width of any main transistor.

[0062] In this structure, an auxiliary transistor can be connected to multiple main transistors through the above connection relationship. In this case, multiple main transistors in this structure are independent of each other and share the same auxiliary transistor. In order to achieve impedance matching in this structure, impedance matching can be achieved by adjusting the ratio of the gate width of each main transistor to the gate width of the auxiliary transistor. When a resistor is connected to the gate end of the auxiliary transistor, the resistance value of the resistor can also be adjusted for impedance matching, which plays the same function as the first structure in this embodiment.

[0063] Specifically, when only two main transistors are provided to be connected to an auxiliary transistor through the above-mentioned connection relationship, in the present structure, the power amplifier may include a first main transistor and a second main transistor; the gate terminal of the first main transistor and the gate terminal of the second main transistor are connected to the corresponding input matching circuit, the drain terminal of the first main transistor and the drain terminal of the second main transistor are connected to the corresponding output matching circuit, the gate terminal of the first main transistor, the drain terminal of the first main transistor, the gate terminal of the second main transistor, and the drain terminal of the second main transistor are respectively connected to corresponding bias circuits; the source terminal of the first main transistor and the source terminal of the second main transistor are connected to the drain terminal of the same auxiliary transistor.

[0064] This embodiment provides five different power amplifiers, all of which form a cascode-like structure by cascading additional auxiliary transistors in the main transistor to achieve impedance point adjustment. By connecting auxiliary transistors in series and dividing the voltage of the main transistor by the auxiliary transistor, it is possible to reduce the leakage voltage of the main transistor, thereby reducing the power density, thereby reducing the power matching difficulty of the device, and making the impedance of the main transistor close to 50 ohms, which is easy to match. At the same time, since the auxiliary transistor connected in series with the source of the main transistor is in a normally open state, it will not affect the efficiency and gain of the main transistor power amplifier, which can not only ensure that the output load impedance reflection coefficient is reduced, but also reduce the design difficulty of the output matching circuit.

[0065] Embodiment 3

[0066] An electronic device provided by an embodiment of the present invention is introduced below. The electronic device described below and the power amplifier described above can refer to each other.

[0067] In this embodiment, the electronic device includes a power amplifier provided by any of the above invention embodiments, and the specific structure of the power amplifier has been described in detail in the above invention embodiments, and will not be described in detail here. The remaining structures of the electronic device, such as the processor, can refer to the prior art, and will not be described in detail here.

[0068] Since the electronic device provided in this embodiment specifically uses the power amplifier provided in the above embodiment, the impedance in the electronic device is easier to match, so that the quality of the signal transmitted in the electronic device is higher, and correspondingly the electronic device has higher performance.

[0069] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0070] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0071] The above is a detailed introduction to a power amplifier and an electronic device provided by the present invention. This article uses specific examples to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method and core ideas of the present invention. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present invention, the present invention can also be improved and modified, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A power amplifier, characterized in that: It includes a main transistor, an auxiliary transistor, a bias circuit, an input matching circuit and an output matching circuit; The gate terminal of the main transistor is connected to the input matching circuit, the drain terminal of the main transistor is connected to the output matching circuit, and the gate terminal of the main transistor and the drain terminal of the main transistor are respectively connected to corresponding bias circuits; the source terminal of the main transistor is connected to the drain terminal of the auxiliary transistor; the source terminal of the auxiliary transistor is grounded, and the gate terminal of the auxiliary transistor is set so that the auxiliary transistor is normally open; The voltage drop of the auxiliary transistor after being turned on is not less than 50% of the voltage drop of the main transistor.

2. The power amplifier according to claim 1, characterized in that: The voltage drop of the auxiliary transistor after being turned on is not less than the voltage drop of the main transistor.

3. The power amplifier according to claim 1, characterized in that: The main transistor is a GaN HEMT device, and the auxiliary transistor is a GaN HEMT device.

4. The power amplifier according to claim 3, characterized in that: The main transistor and the auxiliary transistor are integrated on the same substrate.

5. The power amplifier according to claim 4, characterized in that: The gate width of the auxiliary transistor is not less than the gate width of the main transistor.

6. The power amplifier according to claim 1, characterized in that: The gate terminal of the auxiliary transistor is grounded.

7. The power amplifier according to claim 6, characterized in that: A gate terminal of the auxiliary transistor is connected to one end of a resistor, and the other end of the resistor is grounded.

8. The power amplifier according to claim 7, characterized in that: The output matching circuit includes a capacitor having one end connected to the drain end of the main transistor, the other end of the capacitor serving as an output end, the other end of the capacitor connected to one end of an inductor, and the other end of the inductor grounded.

9. The power amplifier according to claim 1, characterized in that: The gate terminal of the auxiliary transistor is left vacant.

10. The power amplifier according to claim 1, characterized in that: comprising a plurality of the main transistors, a plurality of the input matching circuits and a plurality of the output matching circuits; The gate terminal of each main transistor is connected to the corresponding input matching circuit, the drain terminal of each main transistor is connected to the corresponding output matching circuit, and the gate terminal and drain terminal of each main transistor are respectively connected to the corresponding bias circuit; The source terminals of the plurality of main transistors are connected to the drain terminal of the same auxiliary transistor.

11. An electronic device, characterized in that: The method comprises a power amplifier as claimed in any one of claims 1 to 10.

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