Vertical liquid phase epitaxy system with high-temperature field uniformity

Abstract

The invention belongs to the technical field of single crystal thick film preparation, and particularly relates to a high temperature field uniformity vertical liquid phase epitaxy system which comprises a furnace body and a replacement assembly, the replacement assembly comprises a platform, and a two-way gear ring is rotationally installed in the platform and a one-way gear ring is fixedly installed in the platform; and a crucible I and a crucible II are mounted on the platform. When a single crystal substrate separates out a solution single crystal in a crucible I, the crucible I rotates to throw off a residual melt on the single crystal substrate, meanwhile, a crucible II moves along a replacement groove and rotates, so that the melt in the crucible II is continuously and uniformly mixed until the crucible I is replaced by the crucible II, and in the process, the crucible II and the crucible I are in the same temperature gradient; therefore, the rate of separating out single crystals from the single crystal substrate is ensured to be the same, the phenomenon of non-uniform thickness of a separated-out RIGs thick film is avoided, and the quality of the RIGs thick film is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of single crystal thick film preparation, and in particular relates to a vertical liquid phase epitaxial growth system with high temperature field uniformity. Background Art

[0002] As the core component of magneto-optical isolators, rare earth iron garnet (RIG) thick film determines the performance of passive optical devices, the combat effectiveness of laser weapons and the transmission effect of optical fiber communication. At present, liquid phase epitaxy (LPE) is the mainstream technology for growing RIG thick film. Liquid phase epitaxy is a single crystal growth technology that uses cooling to cause solid substances to precipitate on the substrate to form nuclei and then react to form films. Compared with molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) epitaxy technologies, liquid phase epitaxy technology has the advantages of low cost, fast growth rate, and flexible doping element types. It is suitable for the growth of compound semiconductor single crystal materials and rare earth garnet magnetic materials. At this stage, the Bi:RIG or Ce:RIG thick film materials suitable for mainstream magneto-optical isolation devices often require a thickness of 340μm-370μm. Considering the subsequent grinding and polishing process of the film, the thickness of the LPE grown film should be greater than 500μm.

[0003] However, the magneto-optical films that can be obtained by the current LPE device are mainly concentrated in the diameter of 2-3 inches and the film thickness is in the range of 1μm-100μm, which cannot meet the actual use requirements. The Chinese patent with publication number CN114752997A solves the above problem by continuously exchanging the crucibles inside the first furnace body and the second furnace body to achieve continuous growth of liquid phase epitaxial film. Due to the different temperature gradients of the first furnace body and the second furnace body, the temperature of the solution in the crucible will change accordingly during the process of exchanging the crucible from the second furnace body to the first furnace body, which will cause the precipitation rate of the solution in the first crucible and the second crucible to change, which is easy to cause the precipitated (RIG) thick film to be uneven in thickness, affecting the quality of the (RIG) thick film and increasing the difficulty of post-processing. Summary of the invention

[0004] The purpose of the present invention is to provide a vertical liquid phase epitaxial growth system with high temperature field uniformity to solve the technical problems in the prior art.

[0005] The object of the present invention can be achieved by the following technical scheme: A vertical liquid phase epitaxy system with uniform high temperature field, comprising a furnace body, an induction heater is installed inside the furnace body, an insulation layer is installed on the inner wall of the furnace body, a moving component and a gas cylinder are installed on the top of the furnace body, and a rotatable and liftable replacement component is installed inside the furnace body; The output end of the moving component is equipped with a single crystal substrate, and the replacement component includes a platform and a rotatable conveying pipe, and the conveying pipe is installed inside the platform, and a bidirectional gear ring is rotatably installed and a unidirectional gear ring is fixedly installed inside the platform, and the conveying pipe cooperates with the bidirectional gear ring in transmission; The platform is provided with a replacement slot and a storage slot, which are connected by a transition plate, on which a crucible one is rotatably mounted, a transmission gear two is mounted between the bidirectional gear ring and the unidirectional gear ring, and the transmission gear two is respectively meshed with the bidirectional gear ring and the unidirectional gear ring, and a crucible two is mounted on the transmission gear two, and the single crystal substrate faces the crucible one.

[0006] As a further optimization or improvement of the present solution, a driving tooth is coaxially installed on the conveying tube, and the driving tooth meshes with the internal teeth of the bidirectional gear ring through the driven tooth, and the transmission gear 2 meshes with the external teeth of the bidirectional gear ring and the internal teeth of the unidirectional gear ring respectively; when the conveying tube drives the driving tooth to rotate, the driving tooth will drive the bidirectional gear ring to rotate through the driven tooth, and at this time, the crucible 2 on the transmission gear 2 moves along the replacement groove and rotates under the action of the bidirectional gear ring.

[0007] As a further optimization or improvement of the present solution, a placing table 1 is installed on the transition plate, and a crucible 1 is placed on the placing table 1. A transmission gear 1 is coaxially installed on the bottom of the placing table 1, and the transmission gear 1 only engages with the external teeth of the bidirectional gear ring; when the conveying pipe drives the bidirectional gear ring to rotate, the bidirectional gear ring drives the crucible 1 to rotate.

[0008] As a further optimization or improvement of this solution, a pushing assembly is installed on the replacement assembly, and the pushing assembly includes a crucible inlet groove and a push rod moving along the crucible inlet groove, the crucible inlet groove is connected to the replacement groove, a crucible inlet port is provided on the crucible inlet groove, and the crucible inlet port is connected to the conveying pipe.

[0009] As a further optimization or improvement of this solution, a bracket is installed at the bottom of the furnace body, and a lifting assembly is installed on the bracket. The lifting assembly includes cylinder 2, a connecting plate and a motor. The output end of cylinder 2 is connected to the mounting platform, and the connecting plate and the motor are installed on the mounting platform. The motor cooperates with the conveying pipe in transmission, and the connecting plate connects the conveying pipe and the mounting platform.

[0010] As a further optimization or improvement of the present solution, a built-in cylinder is installed in the mounting platform, and an output end of the built-in cylinder is connected to a placement plate, and the placement plate is located directly below the conveying pipe.

[0011] As a further optimization or improvement of this solution, a pushing gear is installed in the crucible inlet groove, one end of the pushing gear is matched with the push rod for transmission, and the other end of the pushing gear is meshed with the driving tooth.

[0012] As a further optimization or improvement of the present solution, the moving component includes a cylinder 1, the output end of the cylinder 1 is connected to a working rod, and a single crystal substrate is mounted on the working rod.

[0013] Beneficial effects of the present invention: (1) The present invention drives the two-way gear ring to rotate through the conveying pipe, and the rotation of the two-way gear ring drives the crucible 2 to move and rotate along the replacement groove, and the two-way gear ring also drives the crucible 1 to rotate. When the single crystal substrate precipitates the single crystal dissolved in the crucible 1, the crucible 1 rotates to throw off the residual melt on the single crystal substrate, and at the same time, the crucible 2 moves along the replacement groove and rotates, so that the melt in the crucible 2 is continuously and evenly mixed until the crucible 2 replaces the crucible 1. In this process, the crucible 2 and the crucible 1 are both in the same temperature gradient, thereby ensuring that the single crystal substrate precipitates the single crystal at the same rate, avoiding the uneven thickness of the precipitated (RIG) thick film, and improving the quality of the (RIG) thick film.

[0014] (2) The present invention places the crucible containing raw material powder on the placement plate by installing a built-in cylinder and a placement plate at the bottom of the conveying pipe, and then starts the built-in cylinder. The built-in cylinder sends the crucible into the crucible inlet slot through the conveying pipe and the crucible inlet port. During this process, the raw material powder inside the crucible melts. As the conveying pipe drives the active gear to rotate, the active gear drives the push rod to push the crucible to the replacement slot through the push gear, so that the single crystal substrate can continue to grow a thin film. At the same time, it is convenient to replace the crucible. The position of the crucible in the furnace body is moved by the cylinder 2 to achieve the control of the crucible temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The present invention will be further described below in conjunction with the accompanying drawings.

[0016] Figure 1 It is a schematic diagram of the overall structure of the present invention.

[0017] Figure 2 Schematic diagram of the internal structure of the furnace.

[0018] Figure 3 This is a front view of the internal structure of the furnace.

[0019] Figure 4 Schematic diagram of the replacement component structure.

[0020] Figure 5 Exploded view of the replacement component structure.

[0021] Figure 6 It is a schematic diagram of connecting crucible one and crucible two to the bidirectional gear ring respectively.

[0022] Figure 7 This is a schematic diagram of the installation position of transmission gear one and transmission gear two.

[0023] Figure 8 Schematic diagram of the crucible moving path.

[0024] Fig. 9 This is a schematic diagram of the push component structure.

[0025] Fig.10 This is a schematic diagram of the installation position of the push gear.

[0026] Fig.11 Schematic diagram of the internal structure of the installation platform.

[0027] The following are marked in the figure: 1. furnace body; 2. moving assembly; 21. cylinder 1; 22. working rod; 3. gas cylinder; 4. bracket; 5. induction heater; 6. insulation layer; 8. lifting assembly; 81. cylinder 2; 82. mounting table; 83. built-in cylinder; 84. connecting plate; 85. motor; 86. placing plate; 9. single crystal substrate; 10. replacement assembly; 101. conveying pipe; 102. platform; 103. driving gear; 10 4. driven gear; 105. bidirectional gear ring; 106. unidirectional gear ring; 107. transition plate; 108. transmission gear 1; 109. placement table 1; 110. crucible 1; 111. transmission gear 2; 112. placement table 2; 113. crucible 2; 114. storage slot; 115. replacement slot; 11. pushing assembly; 1101. crucible inlet slot; 1102. push rod; 1103. pushing gear; 1104. crucible inlet. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] See also Figure 1-Figure 8 A vertical liquid phase epitaxy system with high temperature field uniformity includes a furnace body 1, an induction heater 5 is installed inside the furnace body 1, an insulation layer 6 is installed on the inner wall of the furnace body 1, a moving component 2 and a gas cylinder 3 are installed on the top of the furnace body 1, and a rotatable and liftable replacement component 10 is installed inside the furnace body 1; The output end of the moving component 2 is provided with a single crystal substrate 9. The replacement component 10 includes a platform 102 and a rotatable delivery tube 101, and the delivery tube 101 is installed inside the platform 102. A bidirectional gear ring 105 is rotatably installed inside the platform 102, and a unidirectional gear ring 106 is fixedly installed inside the platform 102. The delivery tube 101 is in transmission cooperation with the bidirectional gear ring 105. The platform 102 is provided with a replacement groove 115 and a storage groove 114, and the replacement groove 115 and the storage groove 114 are connected by a transition plate 107, and a crucible 110 is rotatably installed on the transition plate 107. A transmission gear 2 111 is installed between the bidirectional gear ring 105 and the unidirectional gear ring 106, and the transmission gear 2 111 is respectively meshed with the bidirectional gear ring 105 and the unidirectional gear ring 106, and a crucible 2 113 is installed on the transmission gear 2 111, and the single crystal substrate 9 is opposite to the crucible 110.

[0030] Specifically, the moving component 2 includes a cylinder 21 , the output end of the cylinder 21 is connected to a working rod 22 , and the single crystal substrate 9 is mounted on the working rod 22 .

[0031] It should be noted that the induction heaters 5 are arranged in multiple groups, and the multiple groups of induction heaters 5 are vertically installed in the furnace body 1. The power of each group of induction heaters 5 is different, so the temperature inside the furnace body 1 changes from top to bottom, so that a temperature gradient is formed inside the furnace body 1, thereby providing a temperature for (RIG) thick film growth.

[0032] It should be noted that the steps for using this solution are as follows; In the first step, the raw material powder is placed in equal parts into crucible 110 and crucible 2 113, and crucible 110 and crucible 2 113 are placed on table 109 and table 2 112 respectively, and then the induction heater 5 is started to increase the temperature of the furnace body 1 to melt the raw material powder inside crucible 110 and crucible 2 113.

[0033] The second step is to start the motor 85 to drive the conveying pipe 101 to rotate. The conveying pipe 101 drives the two-way gear ring 105 to rotate through the gear structure. The rotation of the two-way gear ring 105 drives the crucible 2 113 to move along the replacement groove 115 and rotate. At the same time, the two-way gear ring 105 also drives the crucible 1 110 to rotate, so that the melts in the crucible 1 110 and the crucible 2 113 are evenly mixed.

[0034] The third step is to start cylinder 1 21, so that it drives the single crystal substrate 9 to move downward through the working rod 22. The single crystal substrate 9 slowly descends and is immersed in the melt in the crucible 110 to epitaxially grow a thin film. Start cylinder 2 81, so that cylinder 2 81 drives the conveying pipe 101 to move downward, and the single crystal substrate 9 is slowly pulled out of the melt surface. In this process, the conveying pipe 101 drives the crucible 110 to rotate and throw off the residual melt on the single crystal substrate 9.

[0035] In the fourth step, as the crucible 2 113 moves along the replacement groove 115 , the crucible 2 113 will pass through the placement table 1 109 on the transition plate 107 and then replace the crucible 1 110 , so that the single crystal substrate 9 can continue to grow a thin film.

[0036] The fifth step is to place the crucible filled with raw material powder on the placing plate 86, and then start the built-in cylinder 83. The built-in cylinder 83 will send the crucible on the placing plate 86 into the crucible inlet slot 1101 through the conveying pipe 101 and the crucible inlet port 1104. During this process, the raw material powder inside the crucible melts. As the conveying pipe 101 drives the active gear 103 to rotate, the active gear 103 will drive the push rod 1102 to push the crucible to the replacement slot 115 through the pushing gear 1103.

[0037] Step 6. Repeat the above operation to replace multiple crucibles one by one to ensure the thickness of the growing film.

[0038] See also Figure 5-Figure 8 The driving tooth 103 is coaxially installed on the delivery tube 101, and the driving tooth 103 is meshed with the internal teeth of the bidirectional gear ring 105 through the driven tooth 104, and the transmission gear 2 111 is respectively meshed with the external teeth of the bidirectional gear ring 105 and the internal teeth of the unidirectional gear ring 106; when the delivery tube 101 drives the driving tooth 103 to rotate, the driving tooth 103 will drive the bidirectional gear ring 105 to rotate through the driven tooth 104, and at this time, the crucible 2 113 on the transmission gear 2 111 moves along the replacement groove 115 and rotates under the action of the bidirectional gear ring 105.

[0039] It should be noted that when the motor 85 is started, it drives the conveying tube 101 to rotate. At the same time, the conveying tube 101 drives the driven teeth 104 to rotate through the active teeth 103. The driven teeth 104 engage with the internal teeth of the two-way gear ring 105 and then drive the two-way gear ring 105 to rotate. Since the transmission gear 2 111 engages with the external teeth of the two-way gear ring 105 and the internal teeth of the unidirectional gear ring 106 respectively, the rotation of the two-way gear ring 105 drives the transmission gear 2 111 and the crucible 2 113 thereon to move along the replacement groove 115 and rotate, so that the crucible 2 113 moves along the replacement groove 115 and replaces the crucible 110, so that the single crystal substrate 9 can continue to grow a thin film.

[0040] See also Figure 6-Figure 7 A placing table 109 is installed on the transition plate 107, and a crucible 110 is placed on the placing table 109. A transmission gear 108 is coaxially installed at the bottom of the placing table 109, and the transmission gear 108 only meshes with the external teeth of the bidirectional gear ring 105; when the conveying pipe 101 drives the bidirectional gear ring 105 to rotate, the bidirectional gear ring 105 drives the crucible 110 to rotate.

[0041] It should be noted that the motor 85 starts to drive the conveying tube 101 to rotate, and at the same time, the conveying tube 101 drives the driven teeth 104 to rotate through the active teeth 103, and the driven teeth 104 engage with the internal teeth of the two-way gear ring 105 to drive the two-way gear ring 105 to rotate. Since the transmission gear 2 111 only engages with the external teeth of the two-way gear ring 105, the rotation of the two-way gear ring 105 drives the placement table 109 to rotate. During the process of growing thin film on the single crystal substrate 9, the placement table 109 and the crucible 110 thereon still rotate, thereby effectively throwing off the residual melt on the single crystal substrate 9.

[0042] When the crucible 110 is replaced by the crucible 113 , the crucible 110 replaced by the crucible 113 will enter the storage tank 114 along the transition plate 107 to prevent the replaced crucible 110 from interfering with the growth of the crystal film on the single crystal substrate 9 .

[0043] See also Figure 8-Figure 11 A pushing assembly 11 is installed on the replacement assembly 10, and the pushing assembly 11 includes a crucible inlet groove 1101 and a push rod 1102 moving along the crucible inlet groove 1101. The crucible inlet groove 1101 is connected to the replacement groove 115. A crucible inlet port 1104 is provided on the crucible inlet groove 1101, and the crucible inlet port 1104 is connected to the conveying pipe 101.

[0044] Specifically, a pushing gear 1103 is installed in the crucible inlet groove 1101 , one end of the pushing gear 1103 is in transmission cooperation with the push rod 1102 , and the other end of the pushing gear 1103 is meshed with the driving tooth 103 .

[0045] It should be noted that in the prior art, the LPE device grows thin films in the range of 1 μm-100 μm in thickness. When preparing a (RIG) thick film with a thickness greater than 500 μm, the crucible needs to be replaced repeatedly. In order to consider the convenience of replacing the crucible, it is avoided to repeatedly heat and cool the furnace body 1. The present invention places the crucible containing raw material powder on the placement plate 86 by installing a built-in cylinder 83 and a placement plate 86 at the bottom of the conveying tube 101, and then starts the built-in cylinder 83. The built-in cylinder 83 sends the crucible on the placement plate 86 into the crucible inlet groove 1101 through the conveying tube 101 and the crucible inlet port 1104. During this process, the raw material powder inside the crucible melts. As the conveying tube 101 drives the active gear 103 to rotate, the active gear 103 drives the push rod 1102 to push the crucible onto the bidirectional gear ring 105 through the push gear 1103, so that the single crystal substrate 9 can continue to grow a thin film. At the same time, it is convenient to replace the crucible. The position of the crucible in the furnace body 1 is moved by the cylinder 2 81 to achieve the regulation of the crucible temperature.

[0046] It should be noted that a heat insulating sleeve is provided inside the conveying pipe 101 , and when the crucible enters the crucible inlet groove 1101 through the conveying pipe 101 , the raw material powder in the crucible will be preheated and melted by the crucible inlet groove 1101 .

[0047] See also Figure 2 and Fig.11 A bracket 4 is installed at the bottom of the furnace body 1, and a lifting component 8 is installed on the bracket 4. The lifting component 8 includes a cylinder 81, a connecting plate 84 and a motor 85. The output end of the cylinder 81 is connected to a mounting platform 82. The connecting plate 84 and the motor 85 are installed on the mounting platform 82. The motor 85 cooperates with the conveying pipe 101 in transmission. The connecting plate 84 connects the conveying pipe 101 and the mounting platform 82.

[0048] Specifically, a built-in cylinder 83 is installed in the mounting platform 82 , and an output end of the built-in cylinder 83 is connected to a placement plate 86 , and the placement plate 86 is located directly below the delivery pipe 101 .

[0049] It should be noted that the motor 85 controls the rotation of the conveying pipe 101, and the cylinder 81 controls the lifting and lowering of the conveying pipe 101 and the platform 102.

[0050] The implementation principle of the present invention is: Put equal portions of raw material powder into crucible 110 and crucible 2 113, and place crucible 110 and crucible 2 113 on table 1 109 and table 2 112 respectively. Then start the induction heater 5, the temperature of the furnace body 1 rises, and the raw material powder inside crucible 110 and crucible 2 113 melts.

[0051] The motor 85 is started to drive the conveying pipe 101 to rotate. The conveying pipe 101 drives the two-way gear ring 105 to rotate through the gear structure. The rotation of the two-way gear ring 105 drives the crucible 2 113 to move along the replacement groove 115 and rotate. At the same time, the two-way gear ring 105 also drives the crucible 1 110 to rotate, so that the melt inside the crucible 1 110 and the crucible 2 113 are evenly mixed. The cylinder 1 21 is started to drive the single crystal substrate 9 to move downward through the working rod 22. The single crystal substrate 9 slowly descends and immerses in the melt in the crucible 1 110 to epitaxially grow a thin film. The cylinder 2 81 is started to drive the conveying pipe 101 to move downward, and the single crystal substrate 9 is slowly pulled out of the melt surface. In this process, the conveying pipe 101 drives the crucible 1 10 to rotate to throw off the residual melt on the single crystal substrate 9. As the crucible 2 113 moves along the replacement groove 115 , the crucible 2 113 will pass through the placement table 1 109 on the transition plate 107 and then replace the crucible 1 110 , so that the single crystal substrate 9 can continue to grow a thin film.

[0052] The crucible filled with raw material powder is placed on the placing plate 86, and then the built-in cylinder 83 is started. The built-in cylinder 83 delivers the crucible on the placing plate 86 into the crucible inlet slot 1101 through the conveying pipe 101 and the crucible inlet port 1104. During this process, the raw material powder inside the crucible melts, and as the conveying pipe 101 drives the active gear 103 to rotate, the active gear 103 drives the push rod 1102 to push the crucible to the replacement slot 115 through the pushing gear 1103. The above operation is repeated to replace multiple crucibles one by one to ensure the thickness of the growing film.

[0053] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements all fall within the scope of the present invention to be protected.

Claims

1. A vertical liquid phase epitaxy system with high temperature field uniformity, characterized in that: The furnace body (1) comprises an induction heater (5) installed inside the furnace body (1), an insulation layer (6) installed on the inner wall of the furnace body (1), a moving component (2) and a gas cylinder (3) installed on the top of the furnace body (1), and a rotatable and elevating replacement component (10) installed inside the furnace body (1); The output end of the moving component (2) is mounted with a single crystal substrate (9); the replacement component (10) comprises a platform (102) and a rotatable delivery tube (101); the delivery tube (101) is mounted inside the platform (102); a bidirectional gear ring (105) is rotatably mounted inside the platform (102) and a unidirectional gear ring (106) is fixedly mounted inside the platform (102); the delivery tube (101) and the bidirectional gear ring (105) are in transmission cooperation; The platform (102) is provided with a replacement groove (115) and a storage groove (114), the replacement groove (115) and the storage groove (114) are connected via a transition plate (107), a crucible 1 (110) is rotatably mounted on the transition plate (107), a transmission gear 2 (111) is mounted between the bidirectional gear ring (105) and the unidirectional gear ring (106), and the transmission gear 2 (111) is meshed with the bidirectional gear ring (105) and the unidirectional gear ring (106), a crucible 2 (113) is mounted on the transmission gear 2 (111), and the single crystal substrate (9) is directly opposite to the crucible 1 (110).

2. A vertical liquid phase epitaxy system with high temperature field uniformity according to claim 1, characterized in that: The driving tooth (103) is coaxially mounted on the delivery tube (101), the driving tooth (103) meshes with the internal teeth of the bidirectional toothed ring (105) through the driven tooth (104), and the second transmission gear (111) meshes with the external teeth of the bidirectional toothed ring (105) and the internal teeth of the unidirectional toothed ring (106) respectively; when the delivery tube (101) drives the driving tooth (103) to rotate, the driving tooth (103) drives the bidirectional toothed ring (105) to rotate through the driven tooth (104), and at this time, the second crucible (113) on the second transmission gear (111) moves along the replacement groove (115) and rotates under the action of the bidirectional toothed ring (105).

3. The high temperature field uniformity vertical liquid phase epitaxy system according to claim 1, characterized in that: A placing table (109) is installed on the transition plate (107), and a crucible (110) is placed on the placing table (109). A transmission gear (108) is coaxially installed at the bottom of the placing table (109), and the transmission gear (108) only meshes with the external teeth of the bidirectional gear ring (105); when the conveying pipe (101) drives the bidirectional gear ring (105) to rotate, the bidirectional gear ring (105) drives the crucible (110) to rotate.

4. The high temperature field uniformity vertical liquid phase epitaxy system according to claim 1, characterized in that: A pushing assembly (11) is installed on the replacement assembly (10), the pushing assembly (11) comprising a crucible inlet groove (1101) and a pushing rod (1102) moving along the crucible inlet groove (1101), the crucible inlet groove (1101) being connected to the replacement groove (115), a crucible inlet opening (1104) being provided on the crucible inlet groove (1101), and the crucible inlet opening (1104) being connected to the conveying pipe (101).

5. The high temperature field uniformity vertical liquid phase epitaxy system according to claim 1, characterized in that: A bracket (4) is installed at the bottom of the furnace body (1), and a lifting assembly (8) is installed on the bracket (4). The lifting assembly (8) comprises a second cylinder (81), a connecting plate (84) and a motor (85). The output end of the second cylinder (81) is connected to a mounting platform (82), and the connecting plate (84) and the motor (85) are installed on the mounting platform (82). The motor (85) is in transmission cooperation with the conveying pipe (101), and the connecting plate (84) connects the conveying pipe (101) and the mounting platform (82).

6. A vertical liquid phase epitaxy system with high temperature field uniformity according to claim 5, characterized in that: The mounting platform 82 is provided with a built-in cylinder 83 , the output end of which is connected to a placement plate 86 , and the placement plate 86 is located directly below the delivery pipe 101 .

7. The high temperature field uniformity vertical liquid phase epitaxy system according to claim 4, characterized in that: A pushing gear (1103) is installed in the crucible inlet groove (1101), one end of the pushing gear (1103) is in transmission cooperation with the push rod (1102), and the other end of the pushing gear (1103) is meshed with the driving tooth (103).

8. The high temperature field uniformity vertical liquid phase epitaxy system according to claim 1, characterized in that: The moving assembly (2) comprises a cylinder one (21), the output end of the cylinder one (21) being connected to a working rod (22), and a single crystal substrate (9) being mounted on the working rod (22).

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