MEMS device modeling method based on controlled source

Abstract

The invention discloses an MEMS device modeling method based on a controlled source, and belongs to the field of device equivalent electrical modeling. Comprising R-L-C resonance modeling, input and output port impedance-frequency characteristic modeling and an impedance attenuation compensation amplifier. The R-L-C resonance part is used for modeling aiming at the frequency response characteristic of the MEMS device, an R-C passive network is mainly used for modeling the impedance-frequency characteristic of an input / output port, an extra amplifier is needed for attenuation compensation due to the fact that the passive network has attenuation, and a controlled source can well simulate the transduction characteristic and the coupling structure of the MEMS device. Compared with an existing R-L-C series model or a transformer-based MEMS device modeling method, the modeling method provided by the invention has the advantages that the S parameter is more consistent with a real object, the model parameter design is more convenient, the circuit simulation compatibility is stronger, and the design of a drive circuit required by the MEMS device is more facilitated.

Images