Substrate supporting device and preparation method thereof

Abstract

The invention relates to a substrate supporting device and a manufacturing method thereof.The substrate supporting device comprises a supporting body, a supporting concave part and a vacuum channel, the supporting concave part is formed in the upper surface of the supporting body, the supporting concave part is used for positioning a substrate to be machined to the supporting body, and the vacuum channel is formed in the upper surface of the supporting body; the supporting concave part is provided with a bottom surface which is sunken downwards relative to the upper surface of the supporting body, the bottom surface of the supporting concave part is provided with at least one vacuum channel which penetrates through the supporting body, and the vacuum channel is connected with a vacuumizing system and is used for fixing the substrate to be processed in the supporting concave part. According to the invention, the compatibility and universality of the processing equipment are improved, the substrate to be processed can be prevented from shifting in the processing process, and the processing precision is improved.

Description

Technical Field

[0001] The present application relates to the field of substrate processing, and in particular to a substrate supporting device and a preparation method thereof. Background Art

[0002] In the fields of semiconductors, microelectronics and MEMS (Micro-Electro-Mechanical Systems), both processing equipment such as lithography equipment and etching equipment, and transfer equipment require dedicated substrate carriers to carry substrates.

[0003] The substrate carrier provides stable support and fixation for the substrate, preventing it from moving or deforming during processing, thereby ensuring the accuracy and consistency of processing. In addition, in order to ensure that the pattern or device on the substrate can be accurately aligned with the corresponding part on the processing equipment, the substrate carrier is usually equipped with a precise positioning and alignment system. Since the positioning and alignment system can only position and align substrates of corresponding sizes, it is impossible to position and align a substrate of mismatched size when placed on the carrier, so the existing processing equipment cannot be used to process substrates of other sizes. Summary of the invention

[0004] In order to solve the above technical problems, an embodiment of the present application provides a substrate supporting device and a preparation method thereof.

[0005] In the first aspect, the substrate support device provided by the embodiment of the present application includes: a support body, a support recess and a vacuum channel, wherein the support recess is formed on the upper surface of the support body, and the support recess is used to position the substrate to be processed on the support body, and the support recess has a bottom surface that is recessed downward relative to the upper surface of the support body, and at least one vacuum channel that penetrates the support body is opened on the bottom surface of the support recess, and the vacuum channel is connected to a vacuum pumping system for fixing the substrate to be processed in the support recess.

[0006] In some embodiments, a plurality of support recesses arranged at intervals are formed on the support body, and the support recesses are arranged in one-to-one correspondence with the substrates to be processed, and each of the support recesses is used to position the corresponding substrate to be processed on the support body.

[0007] In some embodiments, a plurality of the vacuum channels are formed on the bottom surface of the supporting recess, and the plurality of the vacuum channels are arranged at intervals.

[0008] In some embodiments, a vacuum channel is provided on the bottom surface of the support recess, and a vacuum groove portion is also provided on the bottom surface of the support recess, wherein the vacuum groove portion includes at least one annular groove and a plurality of strip grooves, wherein the annular groove is coaxially arranged with the vacuum channel, and the plurality of strip grooves are radially distributed for connecting the annular groove and the vacuum channel.

[0009] In some embodiments, the vacuum groove has a depth of 10 μm-100 μm.

[0010] In some embodiments, the bottom surface of the supporting recess is a plane perpendicular to the axis of the supporting recess.

[0011] In a second aspect, a method for preparing a substrate support device provided in an embodiment of the present application comprises:

[0012] forming a first pattern portion on the upper surface of the support body so that the upper surface of the support body has a first area not shielded by the first pattern portion, and etching the first area to form a support recess;

[0013] A vacuum channel penetrating the support body is formed on the bottom surface of the support recess.

[0014] In some embodiments, after etching the first region to form a supporting recess, the method further includes:

[0015] A vacuum groove is formed on the bottom surface of the support recess, and the vacuum groove is communicated with the vacuum channel.

[0016] In some embodiments, forming a vacuum groove on the bottom surface of the supporting recess comprises:

[0017] The first pattern portion is removed, and a second pattern portion is formed on the upper surface of the support body and in the support recess, so that the support recess has a second area not shielded by the second pattern portion, and the second area is etched to form the vacuum groove portion.

[0018] In some embodiments, forming a vacuum channel penetrating the support body on the bottom surface of the support recess comprises:

[0019] A vacuum channel penetrating the support body is formed by etching or laser drilling on the bottom surface of the support recess.

[0020] Compared with the prior art, the beneficial features of the embodiments of the present application are: the substrate support device and the preparation method thereof, the substrate support device includes a support body, a support recess and a vacuum channel, the support recess is formed on the upper surface of the support body, the support recess is used to position the substrate to be processed on the support body, the support recess has a bottom surface that is recessed downward relative to the upper surface of the support body, the bottom surface of the support recess is provided with at least one vacuum channel that penetrates the support body, the vacuum channel is connected to the vacuum pumping system, and is used to fix the substrate to be processed in the support recess, the size of the support body is the same as the size of the substrate matched with the processing equipment, the substrate to be processed can be installed on the support body, and then the support body is placed on the substrate carrier of the processing equipment and positioned and aligned, there is no need to customize special processing equipment for the substrate to be processed, the substrate to be processed can be processed on the existing processing equipment, the production cost is saved, so that the processing equipment can process substrates of other sizes in addition to processing substrates of matching existing sizes, the compatibility and versatility of the processing equipment are improved, and the vacuum channel is connected to the vacuum pumping system to fix the substrate to be processed in the substrate support device, which can avoid the displacement of the substrate to be processed during the processing process, thereby improving the processing accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a schematic diagram of the use state of the substrate support device of the embodiment of the present application;

[0022] Figure 2 for Figure 1 AA section view;

[0023] Figure 3 This is a schematic diagram of the use state of the substrate support device of the embodiment of the present application;

[0024] Figure 4 for Figure 3 BB cross-sectional view;

[0025] Figure 5 This is a schematic diagram of the use state of the substrate support device of the embodiment of the present application;

[0026] Figure 6 This is a schematic diagram of the structure of an unprocessed support body in the method for preparing a substrate support device according to an embodiment of the present application;

[0027] Figure 7 for Figure 6 CC section view;

[0028] Figure 8 This is a schematic diagram of the structure of the intermediate obtained in step S113 in the method for preparing a substrate support device according to an embodiment of the present application;

[0029] Fig. 9 for Figure 8 DD cross-sectional view;

[0030] Fig.10 This is a schematic structural diagram of an intermediate obtained in step S114 in the method for preparing a substrate support device according to an embodiment of the present application;

[0031] Fig.11 for Fig.10 EE cross-sectional view;

[0032] Fig.12 This is a schematic diagram of the first structure of the substrate support device according to an embodiment of the present application;

[0033] Fig.13 This is a schematic structural diagram of the intermediate obtained in step S132 in the method for preparing a substrate support device according to an embodiment of the present application;

[0034] Fig.14 for Fig.13 FF cross-sectional view;

[0035] Fig.15 This is a schematic structural diagram of the intermediate obtained in step S133 in the method for preparing a substrate support device according to an embodiment of the present application;

[0036] Fig.16 for Fig.15 GG cross-sectional view;

[0037] Fig.17 This is a second structural schematic diagram of the substrate support device according to an embodiment of the present application;

[0038] Fig.18 for Fig.17 HH cross-sectional view;

[0039] Among them: 1-support body (101-upper surface, 102-side, 103-first area), 2-support recess (201-bottom surface, 202-side, 203-second area), 3-vacuum channel, 4-substrate to be processed, 5-vacuum groove part (501-annular groove, 502-strip groove), 6-first pattern part, 7-second pattern part. DETAILED DESCRIPTION

[0040] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive.

[0041] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0043] Please refer to Figures 1 to 4 The substrate support device of the embodiment of the present application comprises a support body 1, a support recess 2 and a vacuum channel 3. The support recess 2 is formed on the upper surface 101 of the support body 1, and the support recess 2 is used to position the substrate 4 to be processed on the support body 1. The support recess 2 has a bottom surface 201 that is recessed downward relative to the upper surface 101 of the support body 1, and the bottom surface 201 of the support recess 2 is provided with at least one vacuum channel 3 that penetrates the support body 1. The vacuum channel 3 is connected to the vacuum pumping system, and is used to fix the substrate 4 to be processed in the support recess 2.

[0044] In the embodiment of the present application, the size of the support body 1 is the same as the size of the matching substrate of the existing processing device, and the size of the substrate to be processed 4 is smaller than the size of the matching substrate of the existing processing device. That is to say, after the substrate support device loaded with the substrate to be processed 4 is placed on the substrate carrier of the existing processing device, the positioning and alignment system of the existing processing device can accurately align the pattern or device on the substrate to be processed 4 with the corresponding part on the processing equipment, so that the processing equipment can process substrates 4 of other sizes in addition to processing substrates of matching existing sizes, without the need to customize special processing equipment for the substrate to be processed 4, saving production costs and solving the problem that small-sized substrates cannot be processed on processing equipment for large-sized substrates with high precision and high process capabilities.

[0045] In some preferred embodiments, the support body 1 is made of a matching substrate of an existing processing device, which is not only convenient to obtain materials but also simple in structure. It can be directly prepared on a substrate production line and uses semiconductor process processing without mechanical reprocessing. It not only has high processing accuracy and can match the wafer reprinting requirements of high-precision devices, but also improves production efficiency.

[0046] Specifically, the thickness of the support body 1 may be 100 μm-1000 μm. The support body 1 is a standard substrate, which is convenient for obtaining materials and manufacturing substrate support devices, thereby reducing production costs.

[0047] As an optional embodiment, the support body 1 has a diameter of four inches and a thickness of 525 μm±25 μm.

[0048] As an optional embodiment, the support body 1 has a diameter of six inches and a thickness of 675 μm±25 μm.

[0049] As an optional embodiment, the support body 1 has a diameter of eight inches and a thickness of 725 μm±25 μm.

[0050] As an optional embodiment, the support body 1 has a diameter of twelve inches and a thickness of 775 μm±25 μm.

[0051] As an example, the existing processing equipment can be suitable for processing substrates with a diameter of eight inches, that is, the support body 1 is a substrate with a diameter of eight inches. The substrate 4 to be processed is a substrate with a diameter of two inches. A support recess 2 is provided on the support body 1, and the support recess 2 is arranged in a one-to-one correspondence with the substrate 4 to be processed. The substrate 4 to be processed is placed in the corresponding support recess 2 of the substrate support device, and then the substrate support device is placed on the carrier of the existing processing equipment. The positioning and alignment system of the existing processing equipment can be used to accurately align the pattern or device on the substrate 4 to be processed with the corresponding part on the processing equipment, so as to realize the processing of two-inch substrates on the processing equipment for processing eight-inch substrates. In other words, two-inch substrates can be processed on the production line for processing eight-inch substrates, without the need to customize special processing equipment for two-inch substrates, saving production costs, solving the problem that two-inch substrates cannot be prepared on high-precision, high-process capability eight-inch substrate processing equipment, and can also meet the wafer transfer requirements of high-precision devices. In addition, the substrate support device is directly made of an eight-inch substrate, which is not only easy to obtain but also simple in structure. It can be directly prepared on the eight-inch substrate production line and uses semiconductor process processing without mechanical reprocessing. It not only has high processing accuracy but also improves production efficiency.

[0052] As an example, the existing processing equipment may be a photolithography machine for eight-inch substrates with a 100 nm process. That is, the substrate supporting device can be used to process a two-inch substrate on a photolithography machine for eight-inch substrates with a 100 nm process.

[0053] It is understandable that the processing equipment in this application is prior art and will not be described in detail here. In other words, the substrate carrier and the positioning and alignment system of the processing equipment in this application are prior art and will not be described in detail here.

[0054] It should be noted that the size of the support 1 is larger than the size of the substrate 4 to be processed. The above examples are for illustration only, and the present application does not limit the specific sizes of the support 1 and the substrate 4 to be processed. As an example, the support 1 can also be a substrate with a diameter of six inches or a substrate with a diameter of more than eight inches, and the substrate 4 to be processed can also be a substrate with a diameter of four inches, etc. The processing equipment can also be other equipment, for example, the processing equipment can also be semiconductor and microelectronics field equipment such as a glue spreader, which is not limited here.

[0055] In some preferred embodiments, the support 1 is made of silicon. Specifically, the support 1 may be a silicon wafer substrate. In other embodiments, the support 1 may be made of other materials, such as a glass substrate, which will not be described in detail herein.

[0056] It is understandable that the vacuum pumping system may be a vacuum pumping system of an existing processing equipment, and the vacuum channel 3 is connected to the vacuum pumping system of the existing processing equipment through a vacuum pumping hole on a substrate carrier of the existing processing equipment, which will not be elaborated herein.

[0057] For some optional implementations, see Figure 1 and Figure 2 The embodiment shown and Fig.12 In the illustrated embodiment, a plurality of vacuum channels 3 are provided on the bottom surface 201 of the support recess 2. The plurality of vacuum channels 3 are arranged at intervals, which not only has a simple structure and is easy to process, but also can more securely adsorb and fix the substrate 4 to be processed to the support body 1.

[0058] For some optional implementations, see Figure 3 , Figure 4 , Fig.17 and Fig.18 As shown, a vacuum channel 3 is provided on the bottom surface 201 of the support recess 2, and a vacuum groove 5 is also provided on the bottom surface 201 of the support recess 2. The vacuum groove 5 includes at least one annular groove 501 and a plurality of strip grooves 502. The annular groove 501 is coaxially arranged with the vacuum channel 3, and the plurality of strip grooves 502 are radially distributed. The strip grooves 502 are used to connect the annular groove 501 and the vacuum channel 3. In this embodiment, the vacuum groove 5 connected with the vacuum channel 3 is provided on the bottom surface 201 of the support recess 2. When the substrate 4 to be processed is vacuumed and adsorbed, the force on the substrate 4 to be processed can be made more uniform, so that the substrate 4 to be processed can be fixed to the support body 1 more stably and effectively. Moreover, compared with the vacuum channel 3, the vacuum groove 5 does not need to penetrate the support body 1. The groove depth of the vacuum groove 5 is much smaller than the length of the vacuum channel 3, which can minimize the influence on the strength of the support body 1 and has higher processing accuracy.

[0059] As an example, please refer to Fig.17The vacuum groove portion 5 may include two coaxially arranged annular grooves 501 and two cross-shaped strip grooves 502. The intersection of the two strip grooves 502 is located exactly at the center point of the annular groove 501. Not only is the structure simple and easy to process, but also when vacuuming, the substrate 4 to be processed is subjected to more uniform force.

[0060] In some preferred embodiments, the depth of the vacuum groove 5 may be 10 μm-100 μm, and the thickness of the support body 1 may be 100 μm-1000 μm.

[0061] In one example, the depth of the vacuum groove 5 can be 10 μm, and the thickness of the support 1 can be 100 μm. In another example, the depth of the vacuum groove 5 can be 100 μm, and the thickness of the support 1 can be 1000 μm. In the above examples, the depth of the vacuum groove 5 is only one tenth of the thickness of the support 1, which can minimize the impact on the strength of the support 1, and the processing accuracy is higher, and the substrate 4 to be processed can be fixed to the support 1 more stably and effectively.

[0062] It is understandable that in other embodiments, the vacuum groove portion 5 may also be other structures, which will not be described in detail here.

[0063] In some preferred embodiments, please refer to Figure 2 and Figure 4 The bottom surface 201 of the supporting recess 2 is a plane perpendicular to the axis of the supporting recess 2, so that the substrate 4 to be processed can be adsorbed in the supporting recess 2 more stably and effectively, further avoiding the displacement of the substrate 4 to be processed, and further improving the processing accuracy of the substrate 4 to be processed.

[0064] In some preferred embodiments, a plurality of support recesses 2 are formed on the support body 1, all of the support recesses 2 are arranged at intervals, and the support recesses 2 are arranged one-to-one corresponding to the substrates 4 to be processed, and each support recess 2 is used to position the corresponding substrate 4 to be processed on the support body 1, so that batch processing of multiple substrates 4 to be processed can be achieved, further improving production efficiency.

[0065] As an optional implementation, please refer to Figure 1 and Figure 3 The shape of each supporting recess 2 is the same, and the size of each supporting recess 2 is equal, thereby realizing batch production of multiple identical substrates 4 to be processed, further improving production efficiency.

[0066] As an optional implementation, please refer to Figure 5The shapes of some supporting recesses 2 may be different, and the sizes of some supporting recesses 2 may also be different, so that substrates 4 to be processed of various sizes can be produced at the same time, further improving the compatibility and versatility of the equipment.

[0067] As an optional embodiment, the shape of each supporting recess 2 may be different. Alternatively, the shape of each supporting recess 2 may be the same, but the size of each supporting recess 2 may be different, thereby achieving the simultaneous production of multiple different substrates 4 to be processed, further improving the compatibility and versatility of the processing equipment.

[0068] In some preferred embodiments, please refer to Figure 1 and Figure 3 At least part of the supporting recesses 2 are evenly spaced around the axis of the supporting body 1, thereby making fuller and more effective use of the space, so that the substrate supporting device can hold more substrates 4 to be processed, further improving production efficiency.

[0069] In other embodiments, the supporting recesses 2 may also be distributed in other ways.

[0070] It should be noted that the number, shape, size and specific distribution of the supporting recesses 2 can be set according to actual conditions and will not be elaborated herein.

[0071] In some preferred embodiments, the shape of the side surface 102 of the support body 1 may be the same as the shape of the side surface 202 of the support recess 2. That is, the shape of the side surface 102 of the support body 1 may be the same as the shape of the side surface of the substrate 4 to be processed. As an example, the support body 1 may be a circular silicon wafer substrate with a diameter of six inches, wherein at least one support recess 2 may be a groove-shaped structure with a circular cross-sectional shape and a diameter of two inches, and the substrate 4 to be processed corresponding to the support recess 2 is a circular silicon wafer substrate with a diameter of two inches, so that a circular silicon wafer substrate with a diameter of two inches can be processed on a processing device for a circular silicon wafer substrate with a diameter of six inches.

[0072] In other preferred embodiments, the shape of the side surface 102 of the support body 1 may be different from the shape of the side surface 202 of the support recess 2. That is, the shape of the side surface 102 of the support body 1 may be different from the shape of the side surface of the substrate 4 to be processed. As an example, the support body 1 may be a circular silicon wafer substrate with a diameter of six inches, wherein at least one support recess 2 may be a groove-shaped structure with a square cross-sectional shape and a side length of four inches, and the substrate 4 to be processed corresponding to the support recess 2 may be a square glass substrate with a side length of four inches, so that the square glass substrate with a side length of four inches can be processed on a processing device for a circular silicon wafer substrate with a diameter of six inches.

[0073] It is understandable that the material of the substrate 4 to be processed can be the same as that of the support 1, or the material of the substrate 4 to be processed can be different from that of the support 1. The shape of the substrate 4 to be processed can be the same as that of the support 1, or the shape of the substrate 4 to be processed can be different from that of the support 1, which will not be elaborated here.

[0074] In some preferred embodiments, the cross-sectional shape of the support recess 2 matches the cross-sectional shape of the substrate 4 to be processed. Figure 2 and Figure 4 The height of the fourth surface can be greater than or equal to the height of the corresponding substrate 4 to be processed. In other words, the groove depth of the support recess 2 can be greater than or equal to the height of the corresponding substrate 4 to be processed, thereby more effectively confining the substrate 4 to be processed within the corresponding support recess 2 and better protecting the substrate 4 to be processed.

[0075] The method for preparing a substrate support device according to an embodiment of the present application can be applied to preparing any of the above-mentioned substrate support devices.

[0076] The method for preparing the substrate support device according to the embodiment of the present application comprises steps S11 to S12:

[0077] Step S11, please refer to Figure 8 and Fig. 9 , in such Figure 6 and Figure 7 The upper surface 101 of the support body 1 shown in the figure forms the first pattern portion 6, so that the upper surface 101 of the support body 1 has a first area 103 that is not shielded by the first pattern portion 6, and the first area 103 is etched to form the support recess 2, please refer to Fig.10 and Fig.11 .

[0078] Step S12, please refer to Fig.12 A vacuum channel 3 penetrating the support body 1 is formed on the bottom surface 201 of the support recess 2, one end of the vacuum channel 3 is connected to the support recess 2, and the other end of the vacuum channel 3 can be connected to the existing vacuum system of the processing equipment.

[0079] In the embodiment of the present application, the size of the support body 1 is the same as the size of the matching substrate of the existing processing device, and the size of the substrate 4 to be processed is smaller than the size of the matching substrate of the existing processing device. That is to say, after the substrate support device loaded with the substrate 4 to be processed is placed on the substrate carrier of the existing processing device, the positioning and alignment system of the existing processing device can accurately align the pattern or device on the substrate 4 to be processed with the corresponding part on the processing equipment, so that the processing equipment can process substrates 4 to be processed of other sizes in addition to processing substrates matching the existing size, without the need to customize special processing equipment for the substrate 4 to be processed, saving production costs and solving the problem that small-sized substrates cannot be prepared on large-sized substrate equipment with high precision and high process capability.

[0080] In some preferred embodiments, the support body 1 is made of a matching substrate of an existing processing device, which is not only convenient to obtain materials but also simple in structure. It can be directly prepared on a substrate production line and uses semiconductor process processing without mechanical reprocessing. It not only has high processing accuracy and can match the wafer reprinting requirements of high-precision devices, but also improves production efficiency.

[0081] In some preferred implementations, step S11 may specifically include steps S111 to S114:

[0082] Step S111, spin-coating photoresist on the upper surface 101 of the support 1. As an example, the thickness of the photoresist may be 1 μm-50 μm.

[0083] Step S112, exposing the photoresist. As an example, the exposure energy may be 10 mJ / cm 2 -200mJ / cm 2 .

[0084] Step S113, developing the photoresist, at this time, the exposed photoresist will be removed, and the unexposed photoresist will be left to form the first pattern portion 6, and the first pattern portion 6 only shields part of the upper surface of the support body 1. Therefore, the upper surface 101 of the support body 1 has a first area 103 that is not shielded by the first pattern portion 6. Please refer to Figure 8 and Fig. 9 .

[0085] Step S114, etching the first area 103 not covered by the first pattern portion 6 to form a supporting concave portion 2, please refer to Fig.10 and Fig.11 .

[0086] As an example, the cross-sectional shape of the supporting recess 2 may be circular or square. The depth of the supporting recess 2 may be 10 μm-1000 μm. Preferably, the depth of the supporting recess 2 is greater than the height of the substrate 4 to be processed.

[0087] In some preferred embodiments, the first area 103 not covered by the first pattern portion 6 can be etched by plasma etching. At this time, the upper surface 101 of the support body 1 shielded by the first pattern portion 6 will not be etched, thereby forming a support recess 2. The shape of the support recess 2 is determined by the first pattern portion 6.

[0088] As an example, the etching gas may include SF6 (sulfur hexafluoride), O2 (oxygen) and C4F8 (octafluorocyclobutane). SF6 can be used as the main etching gas, which has a higher etching rate and a better selectivity. O2 can be used as an auxiliary gas together with the main etching gas to increase the etching rate. In addition, O2 can also improve the quality of the etched surface and reduce the residue and pollution after etching. C4F8 can be used as a passivation gas. C4F8 decomposes in a plasma state to produce CF2 groups, thereby forming a layer of high molecular polymer film on the side wall of the groove, preventing further reaction of fluorine free radicals with silicon, protecting the side wall from excessive etching, thereby improving the accuracy and controllability of etching.

[0089] In this embodiment, semiconductor photolithography is used to process the support recess 2, and the formed support recess 2 has a micron level or even sub-micron level precision, which is very high. It can not only more effectively support the substrate 4 to be processed, but also better protect the substrate 4 to be processed, thereby further improving the processing precision of the substrate 4 to be processed.

[0090] In some preferred implementations, step S12 may specifically include:

[0091] The vacuum channel 3 penetrating the support body 1 is formed by etching the bottom surface 201 of the support recess 2. The etching can realize high-precision through-hole processing with higher controllability, and the formed vacuum channel 3 has higher precision.

[0092] In some other preferred implementations, step S12 may specifically include:

[0093] The vacuum channel 3 penetrating the support body 1 is formed by laser drilling on the bottom surface 201 of the support recess 2. This not only has high precision but also can form holes quickly, thereby improving the preparation speed.

[0094] As a preferred embodiment, the bottom surface 201 of the support recess 2 may also be formed with a vacuum groove 5. Accordingly, the preparation method may further include step S13:

[0095] A vacuum groove 5 is formed on the bottom surface 201 of the support recess 2 , and the vacuum groove 5 is communicated with the vacuum passage 3 .

[0096] As an example, step S13 may specifically include steps S131 to S133:

[0097] Step S131, removing the first pattern portion 6, and obtaining Fig.10 and Fig.11 The intermediate shown.

[0098] Step S132, forming a second pattern portion 7 on the upper surface 101 of the support body 1 and in the support recess 2, so that the support recess 2 has a second area 203 not covered by the second pattern portion 7, please refer to Fig.13 and Fig.14 .

[0099] Step S133, etching the second region 203 to form a vacuum groove 5, please refer to Fig.15 and Fig.16 .

[0100] It is understandable that after etching the second region 203 to form the vacuum groove portion 5, the second pattern portion 7 can be removed to obtain Fig.15 and Fig.16 The intermediate shown in FIG. Removing the second pattern portion 7 is a prior art and will not be described in detail here.

[0101] In an optional implementation, step S132 specifically includes steps S1321 to S1323:

[0102] Step S1321, spin-coating photoresist on the upper surface 101 of the support body 1 and the surface of the support recess 2. As an example, the thickness of the photoresist may be 1 μm-50 μm.

[0103] Step S1322: Expose the photoresist. As an example, the exposure energy may be 10 mJ / cm 2 -200mJ / cm 2 .

[0104] Step S1323, developing the photoresist, at this time, the exposed photoresist will be removed, and the unexposed photoresist will be left to form the second pattern portion 7, the second pattern portion 7 only shields the upper surface 101 of the support body 1 and part of the bottom surface of the support recess 2, therefore, the bottom surface 201 of the support recess 2 has a second area 203 not shielded by the second pattern portion 7, please refer to Fig.13 and Fig.14 .

[0105] In some preferred embodiments, the second region 203 not covered by the second pattern portion 7 may be etched by plasma etching to form the vacuum groove portion 5 . The shape of the vacuum groove portion 5 is determined by the second pattern portion 7 .

[0106] As an example, the etching gas may include SF6 (sulfur hexafluoride), O2 (oxygen gas), and C4F8 (octafluorocyclobutane).

[0107] In this embodiment, semiconductor photolithography is used to process the vacuum groove 5. The vacuum groove 5 formed has a micron level or even submicron level precision, which is very high and can more effectively fix the substrate 4 to be processed, further improving the processing precision of the substrate 4 to be processed.

[0108] In some preferred embodiments, step S13 may be performed after etching the first region 103 to form the supporting recess 2 and before step S12. Figures 13 to 18 .

[0109] As an example, please refer to Fig.15 and Fig.16 , a vacuum groove 5 can be formed on the bottom surface 201 of the support recess 2. Then a vacuum channel 3 penetrating the support body 1 is formed on the bottom surface 201 of the support recess 2. Please refer to Fig.17 and Fig.18 That is, step S12 specifically includes: forming a vacuum channel 3 on the bottom surface 201 of the support recess 2 , the vacuum channel 3 being connected to the vacuum groove 5 and penetrating the support body 1 .

[0110] In some more preferred embodiments, the vacuum channel 3 can be coaxially arranged with the annular groove 501 of the vacuum groove portion 5, please refer to Fig.17 That is to say, the vacuum channel 3 is located at the center of the annular groove 501, so that the vacuuming is more uniform, and the stability of the substrate 4 to be processed is further improved.

[0111] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0112] The above embodiments only express the preferred implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A substrate support device, characterized in that: include: A support body, a support recess and a vacuum channel, wherein the support recess is formed on the upper surface of the support body, and is used to position the substrate to be processed on the support body. The support recess has a bottom surface that is recessed downward relative to the upper surface of the support body, and at least one vacuum channel that penetrates the support body is opened on the bottom surface of the support recess. The vacuum channel is connected to a vacuum pumping system and is used to fix the substrate to be processed in the support recess.

2. The substrate support device according to claim 1, wherein: A plurality of support recesses arranged at intervals are formed on the support body, and the support recesses are arranged in one-to-one correspondence with the substrates to be processed, and each of the support recesses is used to position the corresponding substrate to be processed on the support body.

3. The substrate support device according to claim 1, wherein: A plurality of vacuum channels are provided on the bottom surface of the supporting recess, and the plurality of vacuum channels are arranged at intervals.

4. The substrate support device according to claim 1, wherein: A vacuum channel is provided on the bottom surface of the support recess, and a vacuum groove portion is also provided on the bottom surface of the support recess. The vacuum groove portion includes at least one annular groove and a plurality of strip grooves. The annular groove is coaxially arranged with the vacuum channel, and the plurality of strip grooves are radially distributed for connecting the annular groove and the vacuum channel.

5. The substrate support device according to claim 4, characterized in that The depth of the vacuum groove is 10 μm-100 μm.

6. The substrate support device according to claim 1, wherein: The bottom surface of the supporting recess is a plane perpendicular to the axis of the supporting recess.

7. A method for preparing a substrate support device, characterized in that: include: forming a first pattern portion on the upper surface of the support body so that the upper surface of the support body has a first area not shielded by the first pattern portion, and etching the first area to form a support recess; A vacuum channel penetrating the support body is formed on the bottom surface of the support recess.

8. The method for preparing a substrate support device according to claim 7, characterized in that: After etching the first region to form a supporting recess, the method further includes: A vacuum groove is formed on the bottom surface of the support recess, and the vacuum groove is communicated with the vacuum channel.

9. The method for preparing a substrate support device according to claim 8, characterized in that: The forming of a vacuum groove portion on the bottom surface of the supporting recessed portion comprises: The first pattern portion is removed, and a second pattern portion is formed on the upper surface of the support body and in the support recess, so that the support recess has a second area not shielded by the second pattern portion, and the second area is etched to form the vacuum groove portion.

10. The method for preparing a substrate support device according to claim 7, wherein: The vacuum channel penetrating the support body is formed on the bottom surface of the support recess, comprising: A vacuum channel penetrating the support body is formed by etching or laser drilling on the bottom surface of the support recess.

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