Display panel and display device

Abstract

The invention provides a display panel and a display device.The display panel comprises a light-emitting layer on a back plate and a light conversion layer stacked on the light-emitting layer, a plurality of light-emitting units are arranged in the light-emitting layer, each light-emitting unit comprises a light-emitting area and a non-light-emitting area, and the light conversion layer comprises quantum dot filling structures directly facing the light-emitting units respectively. The multiple light-emitting units are provided with target units, the quantum dot filling structures right opposite to the target units serve as target filling structures, and the target filling structures comprise first quantum dot filling structures right opposite to non-light-emitting areas of the target units and second quantum dot filling structures right opposite to light-emitting areas of the target units. The number of the quantum dots in the columnar structure corresponding to the unit area of the first quantum dot filling structure is larger than the number of the quantum dots in the columnar structure corresponding to the unit area of the second quantum dot filling structure, the larger the number of the quantum dots is, the higher the light conversion efficiency is, and the intensity of the converted light in the non-light-emitting area is enhanced. And the display uniformity of the display panel is improved.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] Micro LED technology has attracted attention in the display industry due to its advantages such as high contrast, low power consumption, long life, wide color gamut, high dynamic range and fast response. Quantum dots are nano-scale materials that can emit light. When excited by blue Micro LED or ultraviolet Micro LED, they emit pure light of different colors to meet the needs of full-color display.

[0003] The full-color display technology of Micro LED and quantum dots can not only reduce the number of mass transfers, but also solve the problem of low luminous efficiency of red light Micro LED chips. However, due to the uneven light emission of the light-emitting LED itself, the display panel after color conversion has the problem of uneven display. Summary of the invention

[0004] In view of this, the purpose of the present application is to provide a display panel and a display device to enhance the conversion efficiency of light in the non-luminous area, increase the intensity of light emitted from the non-luminous area, and improve the display uniformity of the display panel.

[0005] In a first aspect, the present application provides a display panel, comprising:

[0006] A light-emitting layer on the back plate, wherein the light-emitting layer is provided with a plurality of light-emitting units, and the light-emitting units include a light-emitting area and a non-light-emitting area;

[0007] A light conversion layer stacked with the light emitting layer, the light conversion layer comprising quantum dot filling structures respectively facing the plurality of light emitting units; the plurality of light emitting units have a target unit, and the quantum dot filling structure facing the target unit serves as a target filling structure;

[0008] The target filling structure includes a first quantum dot filling structure that is opposite to the non-luminescent area of ​​the target unit, and a second quantum dot filling structure that is opposite to the luminescent area of ​​the target unit, the number of quantum dots in the columnar structure corresponding to the unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to the unit area of ​​the second quantum dot filling structure, and the unit area is parallel to the extension plane of the light conversion layer.

[0009] Optionally, the quantum dot concentration of the first quantum dot filling structure is greater than the quantum dot concentration of the second quantum dot filling structure.

[0010] Optionally, the second quantum dot filling structure includes a central structure and an edge structure, and the quantum dot concentration of the central structure is greater than the quantum dot concentration of the edge structure.

[0011] Optionally, a ratio of a quantum dot concentration of the first quantum dot filling structure to a quantum dot concentration of the second quantum dot filling structure is less than 2.

[0012] Optionally, the thickness of the first quantum dot filling structure is greater than the thickness of the second quantum dot filling structure.

[0013] Optionally, the second quantum dot filling structure includes a central structure and an edge structure, and a thickness of the central structure is greater than a thickness of the edge structure.

[0014] Optionally, the surfaces of the first quantum dot filling structure and the second quantum dot filling structure on a side away from the light-emitting unit are flush, and the surfaces on a side facing the light-emitting unit are stepped.

[0015] Optionally, a ratio of a thickness of the first quantum dot filling structure to a thickness of the second quantum dot filling structure is less than 2.

[0016] Optionally, the sum of the projected areas of the light-emitting area and the non-light-emitting area of ​​the target unit in a plane parallel to the extended plane of the light conversion layer is smaller than the sum of the projected areas of the first quantum dot filling structure and the second quantum dot filling structure in a plane parallel to the extended plane of the light conversion layer.

[0017] Optionally, the light-emitting unit includes a first semiconductor layer, a first electrode located in the non-light-emitting area and on a first side of the first semiconductor layer, and a quantum well layer, a second semiconductor layer and a second electrode located in the light-emitting area and on a first side of the first semiconductor layer, the first electrode is connected to the first semiconductor layer, the quantum well layer is connected to the first semiconductor layer, the second semiconductor layer is connected to the quantum well layer and to the second electrode.

[0018] Optionally, the light conversion layer includes a quantum dot substrate, the quantum dot substrate has a groove away from the light-emitting layer, and the quantum dot filling structure is arranged in the groove.

[0019] In a second aspect, an embodiment of the present application further provides a display device, comprising the display panel.

[0020] The embodiment of the present application provides a display panel and a display device, wherein the display panel includes a light-emitting layer on a back panel and a light conversion layer stacked with the light-emitting layer, wherein a plurality of light-emitting units are arranged in the light-emitting layer, wherein the light-emitting unit includes a light-emitting area and a non-light-emitting area, and the light conversion layer includes a plurality of quantum dot filling structures facing the light-emitting units respectively, wherein the plurality of light-emitting units include a target unit, wherein the quantum dot filling structure facing the target unit is used as a target filling structure, wherein the target filling structure includes a first quantum dot filling structure facing the non-light-emitting area of ​​the target unit, and a second quantum dot filling structure facing the light-emitting area of ​​the target unit, and the unit area of ​​the first quantum dot filling structure corresponds to The number of quantum dots in the columnar structure is greater than the number of quantum dots in the columnar structure corresponding to the unit area of ​​the second quantum dot filling structure. The aforementioned unit area is parallel to the extension plane of the light conversion layer. The more quantum dots there are, the higher the light conversion efficiency is. That is to say, the light intensity in the non-luminous area is weaker than that in the luminous area. The light conversion layer is set so that the light in the non-luminous area passes through more quantum dots to achieve more efficient light conversion. The intensity of the converted light is enhanced to a certain extent, thereby reducing the difference in the converted light intensity corresponding to the non-luminous area and the luminous area, and improving the uniformity of the light emitted from the light conversion layer, that is, improving the display uniformity of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0022] Figure 1 A schematic diagram of the structure of a display panel provided in an embodiment of the present application;

[0023] Figure 2 A schematic diagram of the structure of a light-emitting unit provided in an embodiment of the present application;

[0024] Figure 3 A schematic top view of a display panel provided in an embodiment of the present application;

[0025] Figure 4 A schematic diagram of the structure of another display panel provided in an embodiment of the present application;

[0026] Figure 5 A schematic top view of another display panel provided in an embodiment of the present application;

[0027] Figure 6 A schematic diagram of the structure of another display panel provided in an embodiment of the present application;

[0028] Figure 7 A schematic diagram of the structure of another display panel provided in an embodiment of the present application;

[0029] Figure 8 A schematic diagram of the structure of a display device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0030] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

[0031] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0032] Secondly, the present application is described in detail with reference to the schematic diagram. When describing the embodiments of the present application in detail, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present application. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0033] In order to better understand the technical solution and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.

[0034] refer to Figure 1 , which is a structural diagram of a display panel provided in an embodiment of the present application, the display panel includes a light-emitting layer on a back panel 100 and a light conversion layer stacked with the light-emitting layer.

[0035] The backplane 100 may be a driving backplane, which may be provided with a driving circuit. A plurality of light-emitting units 11 / 12 / 13 are provided in the light-emitting layer on the backplane 100. The driving circuit may be connected to the electrodes of the light-emitting units, thereby providing control signals for the light-emitting units. Specifically, the light-emitting unit 11 may be connected to the driving circuit through the contact electrodes 101 / 102 on the backplane 100. The light-emitting unit may emit blue light or ultraviolet light, and the light-emitting unit may be a Micro-LED, that is, the light-emitting unit may be a blue LED or an ultraviolet LED.

[0036] The light-emitting unit may include a light-emitting area and a non-light-emitting area, the light-emitting area is provided with a light-emitting core layer for emitting light, the light-emitting core layer may be a quantum well layer, and electrons and holes may be aggregated in the light-emitting core layer to emit light. One side of the light-emitting core layer may be connected to the first electrode through the first semiconductor layer, and the other side may be connected to the second electrode through the second semiconductor layer. The first electrode and the second electrode may be located on the same side of the light-emitting unit, so that the light-emitting unit is electrically connected to the backplane through the first electrode and the second electrode.

[0037] refer to Figure 2 FIG. 1 is a schematic diagram of a structure of a light-emitting unit provided in an embodiment of the present application. Taking the light-emitting unit 11 as an example, the light-emitting unit includes a first electrode 111 and a second electrode 115, which are connected to the contact electrodes 101 / 102, respectively. The direction of the line connecting the center points of the first electrode 111 and the second electrode 115 of the light-emitting unit is recorded as the first direction, and the light-emitting area (i.e. Figure 2 The size of the right part in the first direction is represented by W6, and the non-luminous area of ​​the luminous unit (i.e. Figure 2 The size of the left part in the first direction is expressed as W7, and the total size of the light emitting unit is expressed as W8=W6+W7.

[0038] The light-emitting unit may include a first semiconductor layer 112, a first electrode 111 located in a non-light-emitting region and located on a first side of the first semiconductor layer 112, and a quantum well layer 113, a second semiconductor layer 114, and a second electrode 115 located in a light-emitting region and located on a first side of the first semiconductor layer 112, wherein the first electrode 111 is connected to the first semiconductor layer 112, the quantum well layer 113 is connected to the first semiconductor layer 112, the second semiconductor layer 114 is connected to the quantum well layer 113, and is connected to the second electrode 115, and there is a certain gap between the quantum well layer 113 and the first electrode 111. One of the first semiconductor layer 112 and the second semiconductor layer 114 is a P-type semiconductor layer for transmitting holes, and the other is an N-type semiconductor layer for transmitting electrons.

[0039] The light conversion layer may include a plurality of quantum dot filling structures that are directly opposite to the light emitting units. Taking the target unit among the plurality of light emitting units as an example, the quantum dot filling structure directly opposite to the target unit is used as the target filling structure. The positive projection of the target unit on the light conversion layer may fall within the region where the target filling structure is located, or may have an overlapping region with the region where the target filling structure is located. The light emitted from the target filling structure is red light, green light or blue light.

[0040] refer to Figure 1As shown, the plurality of light emitting units may include a first light emitting unit 11, a second light emitting unit 12 and a third light emitting unit 13, the first light emitting unit 11, the second light emitting unit 12 and the third light emitting unit 13 may emit the same light, and the target unit may be at least one of the first light emitting unit 11, the second light emitting unit 12 and the third light emitting unit 13. Figure 1 and Figure 3 As shown, Figure 3 A schematic top view of a display panel provided in an embodiment of the present application, in which the quantum dot filling structure facing the first light-emitting unit 11 in the light conversion layer is recorded as the first filling structure 21, the quantum dot filling structure facing the second light-emitting unit 12 is recorded as the second filling structure 23, and the quantum dot filling structure facing the third light-emitting unit 13 is recorded as the third filling structure 25. The light emitted by the first light-emitting unit 11 is emitted as red light after passing through the first filling structure 21, the light emitted by the second light-emitting unit 12 is emitted as green light after passing through the second filling structure 23, and the light emitted by the third light-emitting unit 13 is emitted as blue light after passing through the third filling structure 25. In this way, full-color display of the display panel is achieved.

[0041] Specifically, the first filling structure 21 may include red quantum dots, so that the blue light or ultraviolet light emitted by the first light-emitting unit 11 is converted into red light by the red quantum dots; the second filling structure 23 may include green quantum dots, so that the blue light or ultraviolet light emitted by the second light-emitting unit 12 is converted into green light by the green quantum dots; when the light emitted by the third light-emitting unit 13 is blue light, the third filling structure 25 may be a transparent material, which may include scattering particles or may not include scattering particles, so that the blue light emitted by the third light-emitting unit 13 can still be emitted as blue light after passing through the third filling structure 25; when the light emitted by the third light-emitting unit 13 is ultraviolet light, the third filling structure 25 may include blue quantum dots, so that the ultraviolet light emitted by the third light-emitting unit 13 is converted into blue light by the blue quantum dots.

[0042] Quantum dots are tiny particles that can achieve photoluminescence. When they are hit by energy, they emit a specific light corresponding to the size of the quantum dots. The size of quantum dots can be nanometers, and the quantum dots can be quantum dot nanoparticles. The color converted by the light conversion layer including quantum dots is purer than the light that passes through the traditional color filter, making the color saturation of the display panel stronger, and the conversion efficiency is high, which is conducive to energy saving. Quantum dots of different sizes can convert different colors of light.

[0043] In actual operation, the light conversion layer may include a quantum dot substrate 200, the quantum dot substrate 200 has a groove away from the light-emitting layer, the quantum dot filling structure is arranged in the groove, the quantum dot filling structure is filled in the groove, and its shape is determined by the shape of the groove. The quantum dot substrate 200 may be a transparent structure, and its material may be an inorganic material, such as silicon oxide, silicon nitride or aluminum oxide.

[0044] Among them, the first filling structure 21 can be set in the first groove, the second filling structure 23 can be set in the second groove, the third filling structure 25 can be set in the third groove, or the third filling structure 25 can be a partial structure of the quantum dot substrate 200, that is, the third groove is not set in the quantum dot substrate 200, and the transparent material of the third filling structure 25 is the quantum dot substrate 522 itself. At this time, the third filling structure 25 does not contain scattering particles.

[0045] The first filling structure 21 and the second filling structure 23 may also include quantum dot photoresist or organic material. When the quantum dot substrate 200 is provided with a third groove for accommodating the third filling structure 25, the third filling structure 25 may include quantum dot photoresist or organic material, so that the transparent material of the third filling structure 25 has the same optical properties as the first filling structure 21 and the second filling structure 23, for example, the same absorption, reflection and scattering effects, etc. That is, quantum dots (including red quantum dots, green quantum dots and blue quantum dots) may be distributed in quantum dot photoresist or organic material.

[0046] The quantum dot photoresist can be formed by spin coating, and the excess quantum dot photoresist is removed by photolithography, so that the quantum dot photoresist remains in a specific area, and then cured. The organic material surrounding the quantum dots can be printed to a specific area by inkjet printing technology, and then cured.

[0047] Since the light-emitting unit itself has a light-emitting area and a non-light-emitting area, its light emission is uneven, so the light converted by the light conversion layer is also uneven, resulting in the problem of poor display uniformity of the display panel.

[0048] In the embodiment of the present application, the target unit and the target filling structure facing it are taken as examples, the target filling structure includes a first quantum dot filling structure facing the non-luminous area of ​​the target unit, and a second quantum dot filling structure facing the luminous area of ​​the target unit, the number of quantum dots in the columnar structure corresponding to the unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to the unit area of ​​the second quantum dot filling structure, and the aforementioned unit area is parallel to the extension plane of the light conversion layer. The more quantum dots there are, the higher the conversion efficiency of light, that is, the light intensity of the non-luminous area is weaker than that of the luminous area, and the light conversion layer is set so that the light in the non-luminous area passes through more quantum dots to achieve more efficient light conversion, and the intensity of the converted light is enhanced to a certain extent, thereby reducing the difference in the converted light intensity corresponding to the non-luminous area and the luminous area, and improving the uniformity of the light emitted from the light conversion layer, that is, improving the display uniformity of the display panel.

[0049] refer to Figure 1 , Figure 2 and Figure 3 As shown, the first filling structure 21, the second filling structure 23 and the third filling structure 25 can all be used as target filling structures. When the first light-emitting unit is used as the target unit and the first filling structure is used as the target filling structure, the target filling structure includes a first quantum dot filling structure 210 and a second quantum dot filling structure 220. The following description takes the first filling structure 21 as an example of the target filling structure. The settings of the second filling structure 23 and the third filling structure 25 can refer to the settings of the first filling structure 21. The size of the first quantum dot filling structure 210 in the first direction is recorded as W2, the size of the second quantum dot filling structure 220 in the first direction is recorded as W3, and the total size of the target filling structure in the first direction is recorded as W1=W2+W3.

[0050] In the embodiment of the present application, the sum of the projected areas of the light-emitting area and the non-light-emitting area of ​​the target unit in the plane of the extended plane of the parallel light conversion layer is less than the sum of the projected areas of the first quantum dot filling structure and the second quantum dot filling structure in the plane of the extended plane of the parallel light conversion layer. Specifically, the projected area of ​​the light-emitting area of ​​the target unit in the plane of the extended plane of the parallel light conversion layer may be less than the projected area of ​​the first quantum dot filling structure in the plane of the extended plane of the parallel light conversion layer, and the projected area of ​​the non-light-emitting area of ​​the target unit in the plane of the extended plane of the parallel light conversion layer may be less than or equal to the projected area of ​​the second quantum dot filling structure in the plane of the extended plane of the parallel light conversion layer. In this way, the coverage of the light emitted by the light-emitting unit by the quantum dot filling structure can be ensured, good light conversion coverage can be ensured, and light leakage from the periphery of the quantum dot filling structure to the light output side can be avoided.

[0051] In actual operation, the size W8 of the target unit in the first direction can be smaller than the size W1 of the target filling structure in the first direction, the size W6 of the light-emitting area in the first direction can be smaller than the size W3 of the second quantum dot filling structure in the first direction, and the size W7 of the non-light-emitting area in the first direction can be smaller than or equal to the size W2 of the first quantum dot filling structure in the first direction.

[0052] As an implementation method, the quantum dot concentration of the first quantum dot filling structure can be set greater than the quantum dot concentration of the second quantum dot filling structure, that is, there is a concentration gradient in the target filling structure, so that when the first quantum dot filling structure and the second quantum dot filling structure have the same thickness, the number of quantum dots in the columnar structure corresponding to the unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to the unit area of ​​the second quantum dot filling structure, thereby making the first quantum dot filling structure have a higher light conversion efficiency.

[0053] The ratio of the quantum dot concentration of the first quantum dot filling structure to the quantum dot concentration of the second quantum dot filling structure is less than 2. The quantum dot concentration of the first quantum dot filling structure is recorded as C1, and the quantum dot concentration of the second quantum dot filling structure is recorded as C2, that is, C1>C2, and C1 / C2<2, specifically, 1.05<C1 / C2<1.1.

[0054] In actual operation, since the luminous intensity in the luminous area may be uneven, for example, due to the reflection of light by the sidewalls in the luminous area, the edge area of ​​the luminous area has a higher luminous brightness than the central area, the second quantum dot filling structure may be set to have a concentration gradient. Specifically, the second quantum dot filling structure may include a central structure and an edge structure, and the edge structure may be a region that completely surrounds the central structure or a region that half surrounds the central structure.

[0055] refer to Figure 4 FIG. 1 is a schematic diagram of another display panel structure provided in an embodiment of the present application, referring to FIG. Figure 5 As shown, it is a top view schematic diagram of another display panel provided by an embodiment of the present application. The first filling structure 21 is used as a target filling structure, and may include a first quantum dot filling structure 210 and a second quantum dot filling structure 220. The second quantum dot filling structure 220 may include a central structure 221 and an edge structure 222. The edge structure 222 is arranged to surround the central structure 221. The dimension of the central structure 221 in the first direction is denoted as W5, and the width of the edge structure 222 is denoted as W4. Then, the dimension of the second quantum dot filling structure 220 in the first direction is W3=W4+W5.

[0056] The quantum dot concentration of the central structure can be greater than that of the edge structure, so that the central structure has a higher conversion efficiency. The quantum dot concentration of the central structure is recorded as C2, and the quantum dot concentration of the edge structure is recorded as C3, C2>C3, and C2 / C3<2, specifically, 1.05<C2 / C3<1.1.

[0057] As another implementation method, the thickness of the first quantum dot filling structure can be set to be greater than the thickness of the second quantum dot filling structure, that is, the target filling structure has a thickness gradient, so that when the first quantum dot filling structure and the second quantum dot filling structure have the same quantum dot concentration, the number of quantum dots in the columnar structure corresponding to the unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to the unit area of ​​the second quantum dot filling structure, thereby making the first quantum dot filling structure have a higher light conversion efficiency.

[0058] refer to Figure 6 FIG. 1 is a schematic diagram of the structure of another display panel provided in an embodiment of the present application, and its corresponding top view is referenced to FIG. Figure 3As shown, taking the first filling structure 21 as the target filling structure as an example, the first quantum dot filling structure 210 and the second quantum dot filling structure 220 have different thicknesses. The ratio of the thickness of the first quantum dot filling structure to the thickness of the second quantum dot filling structure is less than 2, the thickness of the first quantum dot filling structure is recorded as H1, and the thickness of the second quantum dot filling structure is recorded as H2, that is, H1>H2, and H1 / H2<2, specifically, 1.05

[0059] In actual operation, since the luminous intensity in the luminous area may be uneven, the second quantum dot filling structure may be set to have a thickness gradient. Specifically, the second quantum dot filling structure may include a central structure and an edge structure, and the edge structure may be a region that completely surrounds the central structure or a region that half surrounds the central structure.

[0060] refer to Figure 7 FIG. 1 is a schematic diagram of the structure of another display panel provided in an embodiment of the present application, and its corresponding top view is referenced to FIG. Figure 5 As shown, the thickness of the central structure can be greater than the thickness of the edge structure, so that the central structure has a higher conversion efficiency. The thickness of the central structure is recorded as H3, and the thickness of the edge structure is recorded as H4, H3>H4, and H3 / H4<2, specifically, 1.05<H3 / H4<1.1. At this time, H3 can be equal to the aforementioned H2.

[0061] In the case where the target filling structure has a thickness gradient, the first quantum dot filling structure and the second quantum dot filling structure can be set to have a surface on one side away from the light-emitting unit flush, and a surface on the side facing the light-emitting unit in a stepped shape, that is, the surface on the side of the first quantum dot filling structure facing the light-emitting unit can protrude from the surface on the side of the second quantum dot filling structure facing the light-emitting unit, refer to Figure 6 and Figure 7 When the second quantum dot filling structure has a thickness gradient, the surfaces of the central structure and the edge structure on the side away from the light-emitting unit can be set to be flush, and the surface on the side facing the light-emitting unit can be stepped, that is, the surface of the central structure on the side facing the light-emitting unit can protrude from the surface of the edge structure on the side facing the light-emitting unit. This stepped surface can be achieved by the stepped groove.

[0062] ​As another implementation method, the thickness of the first quantum dot filling structure can be set to be greater than the thickness of the second quantum dot filling structure, and the quantum dot concentration of the first quantum dot filling structure can be greater than the quantum dot concentration of the second quantum dot filling structure, that is, the first quantum dot filling structure and the second quantum dot filling structure can have a thickness gradient and a concentration gradient, so that the number of quantum dots in the columnar structure corresponding to the unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to the unit area of ​​the second quantum dot filling structure, thereby making the first quantum dot filling structure have a higher light conversion efficiency.

[0063] The second quantum dot filling structure may include a central structure and an edge structure, and the edge structure may be a region that completely surrounds the central structure or a region that half surrounds the central structure. The thickness of the central structure may be greater than that of the edge structure, and the quantum dot concentration of the central structure may be greater than that of the edge structure, so that the central structure has a higher conversion efficiency.

[0064] The embodiment of the present application provides a display panel, including a light-emitting layer on a backplane and a light conversion layer stacked with the light-emitting layer, wherein a plurality of light-emitting units are arranged in the light-emitting layer, wherein the light-emitting unit includes a light-emitting area and a non-light-emitting area, and the light conversion layer includes a plurality of quantum dot filling structures facing the light-emitting units respectively, wherein the plurality of light-emitting units include a target unit, and the quantum dot filling structure facing the target unit is used as a target filling structure, wherein the target filling structure includes a first quantum dot filling structure facing the non-light-emitting area of ​​the target unit, and a second quantum dot filling structure facing the light-emitting area of ​​the target unit, wherein the columnar structure corresponding to the unit area of ​​the first quantum dot filling structure The number of quantum dots is greater than the number of quantum dots in the columnar structure corresponding to the unit area of ​​the second quantum dot filling structure. The aforementioned unit area is parallel to the extension plane of the light conversion layer. The more quantum dots there are, the higher the light conversion efficiency is. That is to say, the light intensity in the non-luminous area is weaker than that in the luminous area. The light conversion layer is set to allow the light in the non-luminous area to pass through more quantum dots to achieve more efficient light conversion. The intensity of the converted light is enhanced to a certain extent, thereby reducing the difference in the converted light intensity corresponding to the non-luminous area and the luminous area, and improving the uniformity of the light emitted from the light conversion layer, that is, improving the display uniformity of the display panel.

[0065] An embodiment of the present application also provides a display device, comprising the display panel described in the above embodiment.

[0066] refer to Figure 8, which is a schematic diagram of the planar structure of a display device provided in an embodiment of the present application. As can be seen from the figure, the display device 1000 includes a display panel 10, and the display panel 10 is the display panel 10 described in any of the above embodiments. The display device 1000 provided in the embodiment of the present application can be a display device with a display function such as a mobile phone, a computer, a television, a car display device, etc., and the embodiment of the present application does not make specific limitations. The display device 1000 provided in the embodiment of the present application has the beneficial effects of the display panel 10 provided in the embodiment of the present application. For details, please refer to the specific description of the display panel in the above embodiment, and the embodiment of the present application will not be repeated here.

[0067] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the display device embodiment, since it is basically similar to the display panel embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the display panel embodiment.

[0068] The above is only a preferred implementation of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still falls within the scope of protection of the technical solution of the present application.

Claims

1. A display panel, characterized in that: include: A light-emitting layer on the back plate, wherein the light-emitting layer is provided with a plurality of light-emitting units, and the light-emitting units include a light-emitting area and a non-light-emitting area; A light conversion layer stacked with the light emitting layer, the light conversion layer comprising quantum dot filling structures respectively facing the plurality of light emitting units; the plurality of light emitting units have a target unit, and the quantum dot filling structure facing the target unit serves as a target filling structure; The target filling structure includes a first quantum dot filling structure that is opposite to the non-luminescent area of ​​the target unit, and a second quantum dot filling structure that is opposite to the luminescent area of ​​the target unit, the number of quantum dots in the columnar structure corresponding to the unit area of ​​the first quantum dot filling structure is greater than the number of quantum dots in the columnar structure corresponding to the unit area of ​​the second quantum dot filling structure, and the unit area is parallel to the extension plane of the light conversion layer.

2. The display panel according to claim 1, characterized in that: The quantum dot concentration of the first quantum dot filling structure is greater than the quantum dot concentration of the second quantum dot filling structure.

3. The display panel according to claim 2, characterized in that: The second quantum dot filling structure includes a central structure and an edge structure, and the quantum dot concentration of the central structure is greater than the quantum dot concentration of the edge structure.

4. The display panel according to claim 2, characterized in that: The ratio of the quantum dot concentration of the first quantum dot filling structure to the quantum dot concentration of the second quantum dot filling structure is less than 2.

5. The display panel according to claim 1, characterized in that: The thickness of the first quantum dot filling structure is greater than the thickness of the second quantum dot filling structure.

6. The display panel according to claim 5, characterized in that: The second quantum dot filling structure includes a central structure and an edge structure, and the thickness of the central structure is greater than the thickness of the edge structure.

7. The display panel according to claim 5, characterized in that: The surfaces of the first quantum dot filling structure and the second quantum dot filling structure on one side away from the light emitting unit are flush, and the surfaces on one side facing the light emitting unit are stepped.

8. The display panel according to claim 5, characterized in that: The ratio of the thickness of the first quantum dot filling structure to the thickness of the second quantum dot filling structure is less than 2.

9. The display panel according to any one of claims 1 to 8, characterized in that: The sum of the projected areas of the luminous area and the non-luminous area of ​​the target unit in a plane parallel to the extension plane of the light conversion layer is smaller than the sum of the projected areas of the first quantum dot filling structure and the second quantum dot filling structure in a plane parallel to the extension plane of the light conversion layer.

10. The display panel according to any one of claims 1 to 8, characterized in that: The light-emitting unit includes a first semiconductor layer, a first electrode located in the non-light-emitting area and on a first side of the first semiconductor layer, and a quantum well layer, a second semiconductor layer, and a second electrode located in the light-emitting area and on a first side of the first semiconductor layer, the first electrode is connected to the first semiconductor layer, the quantum well layer is connected to the first semiconductor layer, the second semiconductor layer is connected to the quantum well layer, and is connected to the second electrode.

11. The display panel according to any one of claims 1 to 8, characterized in that: The light conversion layer includes a quantum dot substrate, the quantum dot substrate has a groove away from the light emitting layer, and the quantum dot filling structure is arranged in the groove.

12. A display device, characterized in that: A display panel comprising any one of claims 1-11.

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