Method and system for testing two-dimensional material through vacuum interconnection

Abstract

The invention discloses a method and a system for testing a two-dimensional material through vacuum interconnection. The method comprises the following steps: providing a sample to be detected; screening test sites by utilizing Auger electron spectroscopy and X-ray photoelectron spectroscopy; based on the position of the test site, cutting the two-dimensional material by using a focused ion beam to obtain a corresponding transmission sample, and observing the transmission sample by using a transmission microscope; the transfer process of the sample to be detected is in a vacuum environment. According to the method for testing the two-dimensional material, the vacuum interconnection technology is utilized, multiple testing means are combined for application, a sample does not make contact with air in the whole process, pollution is avoided, and first screening targets are formed from morphology and components through Auger electron spectroscopy; the X-ray photoelectron spectroscopy is used for screening again from the aspects of chemical states and bonding and confirming test sites, and finally the focused ion beam-transmission microscope is used for further characterization testing, so that a large amount of sample searching work is reduced for the focused ion beam and the transmission microscope which are complex and high in cost, and the method is convenient, rapid and efficient.

Description

Technical Field

[0001] The present invention relates to the technical field of material characterization testing, and in particular to a method and system for vacuum interconnect testing of two-dimensional materials. Background Art

[0002] Two-dimensional materials have many excellent properties and have broad application prospects in the fields of electronic devices. For the better development of two-dimensional materials, the exploration of their preparation and testing methods has always attracted much attention. On the one hand, the special structural properties of two-dimensional materials have certain limitations in both composition and structural testing. On the other hand, two-dimensional materials are easily contaminated and corroded by gas molecules in their environment. If you want to obtain a stable structure for a long time, you must be in a clean vacuum environment. The vacuum interconnection of multiple devices can achieve a local ultra-clean environment, which is of great significance for the characterization and testing of low-dimensional materials.

[0003] Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) are both commonly used surface analysis tools. AES has high surface sensitivity and nanoscale spatial resolution. However, AES testing of surface elements is only a qualitative and semi-quantitative description, and cannot accurately analyze the valence state of elements and material structure. XPS is characterized by high surface sensitivity and can analyze the valence state of elements and bonding conditions, but the spatial resolution is poor. Therefore, the combination of AES and XPS can provide accurate information for the testing and analysis of two-dimensional materials. Focused ion beam microscope (FIB) can prepare transmission electron microscope (TEM) samples at fixed points, but the observable target area is about 10um, or even smaller, and one sample usually takes 2-4h. If the composition and structure of two-dimensional materials are tested only by FIB-TEM, it will take a long time and cost a lot. Summary of the invention

[0004] In view of the deficiencies in the prior art, an object of the present invention is to provide a method and system for vacuum interconnect testing of two-dimensional materials.

[0005] In order to achieve the above-mentioned invention object, the technical solution adopted by the present invention includes:

[0006] In a first aspect, the present invention provides a method for vacuum interconnect testing of two-dimensional materials, comprising:

[0007] Providing a sample to be tested, wherein the sample to be tested includes a substrate and a two-dimensional material disposed on a surface of the substrate;

[0008] Using Auger electron spectroscopy and X-ray photoelectron spectroscopy to jointly screen the test sites of the two-dimensional material;

[0009] Based on the position of the test site, using a focused ion beam to cut the two-dimensional material to obtain a corresponding transmission sample and using a transmission microscope to observe the transmission sample;

[0010] The transfer process of the sample to be tested between the Auger electron spectroscopy, the X-ray photoelectron spectroscopy, the focused ion beam and the transmission microscope is all in a vacuum environment.

[0011] In a second aspect, the present invention further provides a system for vacuum interconnected testing of two-dimensional materials, which is used to test a sample to be tested, wherein the sample to be tested includes a substrate and a two-dimensional material disposed on a surface of the substrate;

[0012] The system comprises:

[0013] A site screening module, used for jointly screening the test sites of the two-dimensional material by using Auger electron spectroscopy and X-ray photoelectron spectroscopy;

[0014] A characterization test module, used for cutting the two-dimensional material by a focused ion beam to obtain a transmission sample based on the position of the test site and observing the transmission sample by a transmission microscope;

[0015] The transfer process of the sample to be tested between the Auger electron spectroscopy, the X-ray photoelectron spectroscopy, the focused ion beam and the transmission microscope is all in a vacuum environment.

[0016] Based on the above technical solution, compared with the prior art, the beneficial effects of the present invention at least include:

[0017] The method for testing two-dimensional materials provided by the present invention utilizes vacuum interconnection technology and combines multiple testing methods. During the entire process of testing and transferring samples, the samples do not come into contact with air, thereby avoiding contamination. First, the Auger electron spectroscopy is used to screen the targets for the first time from the perspective of morphology and composition, and then the X-ray photoelectron spectroscopy is used to screen and confirm the test sites from the perspectives of chemical state and bonding. Finally, focused ion beam-transmission microscopy is used for further characterization testing, thereby reducing a large amount of sample search work for complex and high-cost focused ion beam and transmission microscopy, and the sample characterization test is convenient, fast and efficient.

[0018] The above description is only an overview of the technical solution of the present invention. In order to enable those skilled in the art to more clearly understand the technical means of the present application and implement them according to the contents of the specification, the following is a description of the preferred embodiments of the present invention in conjunction with detailed drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1aIt is a schematic diagram of the surface state of a sample to be tested provided by a typical implementation case of the present invention;

[0020] Figure 1b is a schematic diagram of the surface state of another sample to be tested provided by a typical implementation case of the present invention;

[0021] Figure 2a It is a surface secondary electron morphology photograph of a sample to be tested provided in a typical embodiment of the present invention;

[0022] Figure 2b It is an Auger electron spectrum diagram of different positions on the surface of the sample to be tested provided by a typical embodiment of the present invention;

[0023] Figure 3 This is a surface secondary electron morphology photograph of another position of the sample to be tested provided in a typical implementation case of the present invention. DETAILED DESCRIPTION

[0024] In view of the deficiencies in the prior art, the inventor of this case has proposed the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows.

[0025] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.

[0026] Moreover, relational terms such as “first” and “second” are merely used to distinguish one component or method step from another with the same name, but do not necessarily require or imply any such actual relationship or order between these components or method steps.

[0027] Among the existing surface analysis methods, AES has a higher spatial resolution, up to several nanometers, but the data obtained are qualitative and semi-quantitative analysis, and cannot accurately analyze the valence state of elements and the structure of materials. XPS can analyze the valence state of elements and bonding conditions, but the spatial resolution is poor. In the present invention, the two can be used together to complement each other to obtain more surface information. In addition, FIB fixed-point preparation of TEM samples, combined with TEM atomic resolution testing, is a common method for two-dimensional material structure testing, but the FIB sample preparation area is small and the cost is high. In addition, due to the transfer and sample in and out operations between multiple devices, two-dimensional materials are easily contaminated and lose their essential properties. The present invention comprehensively utilizes different test equipment under vacuum interconnection conditions, first accurately locates the sample position through AES and XPS, and then performs higher-resolution testing and structural characterization through FIB-TEM, which can easily, accurately and efficiently test the position, composition and structural information of two-dimensional materials.

[0028] The present invention first analyzes and confirms the position and composition of the two-dimensional material through AES and XPS, and then performs FIB-TEM in a specific area for atomic scale characterization, which can provide a simple, accurate and efficient method for testing and determining the two-dimensional material.

[0029] In a specific implementation, the purpose of the embodiment of the present invention is to provide a test method for characterizing two-dimensional materials using vacuum interconnected AES, XPS, FIB and TEM. Specifically, a method for testing two-dimensional materials using vacuum interconnection is provided, which includes the following steps:

[0030] A sample to be tested is provided, wherein the sample to be tested includes a substrate and a two-dimensional material arranged on a surface of the substrate.

[0031] Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to jointly screen the test sites of the two-dimensional material.

[0032] Based on the position of the test site, the two-dimensional material is cut with a focused ion beam to obtain a corresponding transmission sample, and the transmission sample is observed with a transmission microscope.

[0033] The transfer process of the sample to be tested between the Auger electron spectroscopy, the X-ray photoelectron spectroscopy, the focused ion beam and the transmission microscope is all in a vacuum environment.

[0034] In some embodiments, the substrate is electrically conductive, non-volatile, and non-magnetic.

[0035] In some embodiments, the two-dimensional material includes a continuous thin film and / or independently distributed bulk membrane layers.

[0036] In some embodiments, the shape of the block film layer includes any one of a triangle, a quadrilateral, a hexagon, a circle, and an ellipse, or a combination of two or more thereof.

[0037] As some typical application examples of the above technical solutions, such two-dimensional materials are distributed on a substrate, and the substrate material should meet the test requirements, such as good conductivity, non-volatile, non-magnetic, etc. The two-dimensional material can have a certain shape (such as but not limited to triangles, quadrilaterals, hexagons, circles or ellipses, etc., and can appear intermittently or cover the entire layer). Figure 1a and Figure 1b As shown, the light color is the two-dimensional material and the dark color is the substrate material.

[0038] In some embodiments, the method further comprises the steps of:

[0039] A coordinate system is established on the surface of the substrate to obtain coordinates corresponding to the test sites, where the coordinates are used to indicate the positions of the test sites.

[0040] In some embodiments, the process of searching the test site in the coordinate system may specifically include:

[0041] A first coordinate system is established on the surface of the substrate, where the first coordinate system is used to indicate the position of the characteristic contour of the two-dimensional material.

[0042] A second coordinate system is established at the characteristic contour, and the second coordinate system is used to indicate the relative position of the test site with respect to the characteristic contour.

[0043] When searching for the position of the test site, the characteristic contour is first searched based on the first coordinate system, and then the test site is searched based on the relative position indicated by the second coordinate system.

[0044] In some embodiments, the above process further includes: scanning the surface of the substrate, identifying all feature contours and forming a contour base map, wherein the contour base map is used to highlight the distribution of feature contours on the surface of the substrate.

[0045] In some embodiments, the method for vacuum interconnect testing of two-dimensional materials may specifically include the following sub-steps:

[0046] Secondary electron imaging in Auger electron spectroscopy is used to search for two-dimensional materials on the surface of the substrate.

[0047] Auger electron analysis is performed on the two-dimensional material to obtain the elemental composition of the two-dimensional material.

[0048] A first set of sites that meet sample requirements is screened based on the elemental composition, and the first set of sites is used to further screen out the test sites.

[0049] In some embodiments, the method for vacuum interconnect testing of two-dimensional materials further includes the following process:

[0050] When the C and O signals on the surface of the two-dimensional material exceed a preset threshold, an argon ion gun is used to clean the surface of the two-dimensional material.

[0051] In some embodiments, the incident electron energy of the Auger electron spectroscopy is 3-15 kV.

[0052] As some typical application examples of the above technical solutions, the two-dimensional materials to be measured can be transferred to the AES equipment sampling chamber through a vacuum pipe or transfer chamber without contacting the atmosphere. After the sampling chamber is vacuumed, the sample is transferred to the AES analysis chamber for testing. The spatial resolution of AES can reach several nanometers, the test incident electron energy is 3kV to 15kV, and it is equipped with an argon ion gun. If the C and O signals adsorbed on the surface of the test sample are strong, the argon ion gun can be used for simple cleaning (0 to 30S).

[0053] In the AES test, secondary electron imaging is first used to find possible samples from the morphology (such as triangles, circles, hexagons... The size can range from a few nanometers to a few centimeters, or even larger). The Auger electron spectroscopy tests the composition of samples of different shapes. If the samples of shapes a and b meet the composition requirements of the target samples (for example, they contain elements E1E2...E n ...), record and find appropriate reference points to mark the positions of a and b, and provide reference for subsequent XPS and FIB tests.

[0054] In some embodiments, the method for vacuum interconnect testing of two-dimensional materials may further include the following sub-steps:

[0055] Based on the first site set, an X-ray photoelectron spectroscopy test is performed on the two-dimensional material at the corresponding position to obtain the element valence state and bonding situation corresponding to the corresponding position.

[0056] Based on the valence state and bonding conditions of the elements, a second site set that meets the sample requirements is selected from the first site set as the test site.

[0057] As some typical application examples of the above technical solution, the samples to be tested can be transferred from AES to XPS test chamber through a vacuum pipe or a transfer chamber. The a and b marked in the above example are subjected to XPS test to select samples that meet both alloy elements and valence states, such as a.

[0058] In some embodiments, the method for vacuum interconnect testing of two-dimensional materials may further include:

[0059] The test site is found by electron beam imaging in a focused ion beam, a transmission electron microscope sample is cut and extracted at the corresponding position, and a transmission electron microscope test and analysis is performed.

[0060] In some embodiments, the method for vacuum interconnect testing of two-dimensional materials may further include:

[0061] Before focused ion beam cutting, a step of coating the surface of the two-dimensional material with a protective layer is provided.

[0062] In some embodiments, the protective layer includes C and / or Pt.

[0063] As some typical application examples of the above technical solutions, the sample can be transferred to the FIB through a vacuum pipe or a transfer chamber, and a can be found by electron beam imaging in the FIB, and the TEM sample can be extracted at this position, and subsequent TEM high-resolution testing and analysis can be performed.

[0064] Based on the above exemplary technical solutions, the advantages of the technical solutions provided by the embodiments of the present invention are: multiple devices are vacuum-connected to avoid contact of samples with atmospheric pollution and maintain the essential characteristics of the samples; AES and XPS are first used together to accurately find the target sample in terms of morphology, elements and valence state, and then FIB and TEM are combined to complete the atomic-scale characterization, which greatly saves the workload of FIB and TEM and is simpler and more efficient.

[0065] Corresponding to the above-mentioned method of vacuum interconnection testing two-dimensional materials, an embodiment of the present invention also provides a system for vacuum interconnection testing two-dimensional materials, which is used to test a sample to be tested, wherein the sample to be tested includes a substrate and a two-dimensional material arranged on the surface of the substrate.

[0066] The system comprises:

[0067] A site screening module is used to jointly screen the test sites of the two-dimensional material using Auger electron spectroscopy and X-ray photoelectron spectroscopy.

[0068] The characterization test module is used to cut the two-dimensional material with a focused ion beam based on the position of the test site to obtain a corresponding transmission sample and observe the transmission sample with a transmission microscope.

[0069] The transfer process of the sample to be tested between the Auger electron spectroscopy, the X-ray photoelectron spectroscopy, the focused ion beam and the transmission microscope is all in a vacuum environment.

[0070] In some embodiments, the testing system may specifically include an Auger electron spectroscopy unit, an X-ray photoelectron spectroscopy unit, a focused ion beam unit, and a transmission microscope unit.

[0071] The Auger electron spectrum unit, the X-ray photoelectron spectrum unit, the focused ion beam unit and the transmission microscope unit are all vacuum interconnected through a vacuum interconnection unit.

[0072] The technical solution of the present invention is further described in detail below through several embodiments and in conjunction with the accompanying drawings. However, the selected embodiments are only used to illustrate the present invention, and do not limit the scope of the present invention.

[0073] Example 1

[0074] This embodiment illustrates a testing process of a two-dimensional material, which is tested in a vacuum interconnected system, as shown below:

[0075] The two-dimensional material GaN has an irregular shape, as observed under AES secondary electron imaging. Figure 2a As shown in the figure, three points in different regions were selected for starvation electron spectroscopy element analysis, and it was found that positions P1 and P3 had target element signals N, and Ga and N coexisted, while position P2 had no target element signal N ( Figure 2b ). Find the reference point or sample positioning edge and record the coordinates of P1 and P3. Figure 3 If the element information of the film-like area shown does not match, it will be directly excluded.

[0076] The sample was vacuum transferred to XPS to test the elemental valence and bonding conditions of P1 and P3. The XPS results showed that both P1 and P3 positions met the chemical state requirements (Ga-N bonding).

[0077] The sample was vacuum transferred to the FIB, and the appropriate position and orientation were selected at P1 and P3 to prepare the TEM sample. Before ion beam scanning, in order to protect the target sample, C and Pt should be deposited by electron beam first, and then ion beam deposition and cutting should be performed to prepare the TEM sample.

[0078] The TEM samples prepared by FIB are sent to the TEM equipment for high-resolution characterization to further determine the composition and structural information of the material and complete the high-resolution characterization test of the two-dimensional material.

[0079] Example 2

[0080] This embodiment illustrates another two-dimensional material testing process, which is carried out in a vacuum interconnected system, which is substantially the same as that of embodiment 1, except that the type of two-dimensional material to be tested is different:

[0081] The two-dimensional material targeted by this embodiment is AlN on a Si wafer. Therefore, it is necessary to find similar samples that meet the coexistence of Al and N under AES and determine the position.

[0082] Then, we selected samples with chemical valences satisfying A1N under XPS, and accurately located the samples by combining AES elements with XPS valence states. Combined with FIB-TEM, we finally achieved accurate characterization of the high-resolution structural image of the two-dimensional material.

[0083] Both Example 1 and Example 2 completed the AES and XPS tests in a very short time (30 minutes), found the precise location of the sample, and then accurately prepared the sample with FIB, and saw the target sample under TEM, with an accuracy rate of almost 100%. However, using traditional testing methods, only looking for samples through FIB observation may very likely result in misjudgment. Figure 3 The thin film material in the microscope is used as the sample, and FIB sample preparation and TEM testing are performed, which wastes FIB and TEM work in the non-sample area.

[0084] Example 3

[0085] This embodiment illustrates a testing process of a two-dimensional material with more accurate positioning. The test is performed in a vacuum interconnection system, which is substantially the same as that in Embodiment 1. The main difference is that the positioning is more accurate and efficient through image recognition technology:

[0086] When acquiring an image in AES, the entire surface is quickly scanned, and the edges of different image blocks are extracted based on the grayscale gradient threshold method to form a contour base map. The edges of suspected two-dimensional material blocks are highlighted in red in the base map, and an overall wafer surface distribution map is drawn. The operator can move the viewing angle to the corresponding position of the substrate by clicking on the corresponding position of the contour base map.

[0087] And, a first coordinate system is established on the substrate, and when P1-P3 is selected, the characteristic edge of the closest two-dimensional material is identified, the first coordinate value of the characteristic edge is recorded, and a second coordinate system is established at the center of the characteristic edge to identify the second coordinate value of P1-P3.

[0088] When transferred to other test units, the characteristic edge is first found based on the first coordinate value, and then the second coordinate system is reproduced according to the characteristic edge, and the accurate positions of P1-P3 are respectively found again in the second coordinate system based on the second coordinate value.

[0089] This positioning method combines the positioning of the edge of a two-dimensional material with a specific shape distribution in the sample. The relative position positioning method can avoid the error caused by positioning simply through substrate coordinates, and achieve more accurate positioning and analysis of the previous and next processes.

[0090] Based on the above test results, it can be clearly seen that the method for testing two-dimensional materials provided in the embodiment of the present invention utilizes vacuum interconnection technology to jointly apply multiple testing methods. During the entire process of testing and transferring samples, the samples do not come into contact with the air, thus avoiding contamination. First, the Auger electron spectroscopy is used to screen the targets for the first time from the morphology and composition, and then the X-ray photoelectron spectroscopy is used to screen and confirm the test sites from the aspects of chemical state and bonding. Finally, the focused ion beam-transmission microscope is used for further characterization testing, which reduces a large amount of sample search work for complex and high-cost focused ion beam and transmission microscopes, and the characterization test of the samples is convenient, fast and efficient.

[0091] Specifically, the present invention uses vacuum interconnection technology to combine multiple test equipment. During the entire process of testing and transferring samples, the samples do not come into contact with air, thus avoiding contamination. First, AES is used to screen the target sample from the perspective of morphology and composition, and then XPS is used to confirm the sample from the perspective of chemical state and bonding. Finally, FIB-TEM is used for further characterization, which reduces the workload of complex and high-cost FIB and TEM, making it convenient, fast and efficient.

[0092] It should be understood that the above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for vacuum interconnect testing of two-dimensional materials, characterized in that: include: Providing a sample to be tested, wherein the sample to be tested includes a substrate and a two-dimensional material disposed on a surface of the substrate; Using Auger electron spectroscopy and X-ray photoelectron spectroscopy to jointly screen the test sites of the two-dimensional material; Based on the position of the test site, using a focused ion beam to cut the two-dimensional material to obtain a corresponding transmission sample and using a transmission microscope to observe the transmission sample; The transfer process of the sample to be tested between the Auger electron spectroscopy, the X-ray photoelectron spectroscopy, the focused ion beam and the transmission microscope is all in a vacuum environment.

2. The method for vacuum interconnect testing of two-dimensional materials according to claim 1, characterized in that: The substrate is conductive, non-volatile, and non-magnetic; and / or, the two-dimensional material comprises a continuous thin film and / or independently distributed bulk film layers; Preferably, the shape of the block film layer includes any one of a triangle, a quadrilateral, a hexagon, a circle, and an ellipse, or a combination of two or more thereof.

3. The method for vacuum interconnection testing of two-dimensional materials according to claim 2, characterized in that: Also includes: Establishing a coordinate system on the surface of the substrate to obtain coordinates corresponding to the test site, wherein the coordinates are used to indicate the position of the test site; Preferably, specifically including: Establishing a first coordinate system on the surface of the substrate, wherein the first coordinate system is used to indicate the position of the characteristic contour of the two-dimensional material; Establishing a second coordinate system at the characteristic contour, the second coordinate system being used to indicate a relative position of the test site relative to the characteristic contour; When searching for the position of the test site, first search for the characteristic contour based on the first coordinate system, and then search for the test site based on the relative position indicated by the second coordinate system; Preferably, the method further comprises: scanning the surface of the substrate, identifying all characteristic contours and forming a contour base map, wherein the contour base map is used to highlight the characteristic contour distribution on the surface of the substrate.

4. The method for vacuum interconnection testing of two-dimensional materials according to claim 1, characterized in that: Specifically include: Using secondary electron imaging in Auger electron spectroscopy to search for two-dimensional materials on the surface of the substrate; Performing Auger electron analysis on the two-dimensional material to obtain the elemental composition of the two-dimensional material; A first set of sites that meet sample requirements is screened based on the elemental composition, and the first set of sites is used to further screen out the test sites.

5. The method for vacuum interconnection testing of two-dimensional materials according to claim 4, characterized in that: Also includes: When the C and O signals on the surface of the two-dimensional material exceed a preset threshold, using an argon ion gun to clean the surface of the two-dimensional material; Preferably, the incident electron energy of the Auger electron spectroscopy is 3-15 kV.

6. The method for vacuum interconnection testing of two-dimensional materials according to claim 4, characterized in that: Also includes: Based on the first site set, performing an X-ray photoelectron spectroscopy test on the two-dimensional material at the corresponding position to obtain the element valence state and bonding condition corresponding to the corresponding position; Based on the valence state and bonding conditions of the elements, a second site set that meets the sample requirements is selected from the first site set as the test site.

7. The method for vacuum interconnection testing of two-dimensional materials according to claim 1, characterized in that: Also includes: The test site is found by electron beam imaging in a focused ion beam, a transmission electron microscope sample is cut and extracted at the corresponding position, and a transmission electron microscope test and analysis is performed.

8. The method for vacuum interconnect testing of two-dimensional materials according to claim 1, characterized in that: Also includes: Before focused ion beam cutting, a step of coating the surface of the two-dimensional material with a protective layer; Preferably, the protective layer comprises C and / or Pt.

9. A vacuum interconnected system for testing two-dimensional materials, used for testing a sample to be tested, wherein the sample to be tested comprises a substrate and a two-dimensional material disposed on a surface of the substrate; It is characterized in that The system comprises: A site screening module, used for jointly screening the test sites of the two-dimensional material by using Auger electron spectroscopy and X-ray photoelectron spectroscopy; A characterization test module, used for cutting the two-dimensional material with a focused ion beam to obtain a corresponding transmission sample based on the position of the test site and observing the transmission sample with a transmission microscope; The transfer process of the sample to be tested between the Auger electron spectroscopy, the X-ray photoelectron spectroscopy, the focused ion beam and the transmission microscope is all in a vacuum environment.

10. The system according to claim 9, characterized in that Specifically include Auger electron spectroscopy unit, X-ray photoelectron spectroscopy unit, focused ion beam unit and transmission microscope unit; The Auger electron spectrum unit, the X-ray photoelectron spectrum unit, the focused ion beam unit and the transmission microscope unit are all vacuum interconnected through a vacuum interconnection unit.

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