Winding sheet for sintering bonding

Abstract

A wound sheet for sintering bonding according to the present invention is provided with a first base material and a layer for sintering bonding laminated on the first base material, and is configured by winding a sheet for sintering bonding, which is formed in a strip shape, in the longitudinal direction. The layer for sintering bonding contains an organic binder and sinterable particles containing a conductive metal, and is directly laminated on the first base material or indirectly laminated on the first base material via a second base material. The dimension (L1) of the first substrate in the longitudinal direction is larger than both the dimension (LS) of the layer for sintering and bonding and the dimension (L2) of the second substrate in the longitudinal direction.

Description

[0001] Cross-references to related applications

[0002] This application claims the priority of Japanese Patent Application No. 2023-098780, which is incorporated herein by reference in the description of the present application. Technical Field

[0003] The present invention relates to a wound sheet for sintering bonding. Specifically, the present invention relates to a wound sheet for sintering bonding formed in a strip shape and wound in a longitudinal direction. Background Art

[0004] Conventionally, in the manufacture of semiconductor devices, it is known to mount a semiconductor element on a substrate having a semiconductor element mounting region using a sintered bonding layer (for example, see Patent Document 1 below).

[0005] In addition, Patent Document 1 listed below describes that the sintered bonding layer is constituted as a layer containing sinterable particles and an organic binder.

[0006] Furthermore, the production of a semiconductor device is carried out using, for example, a sintered bonding sheet in which a sintered bonding layer is laminated on a base material, and the sintered bonding sheet is generally formed in a strip shape having a longitudinal direction and a width direction.

[0007] The semiconductor device described above is manufactured, for example, according to the following steps.

[0008] (1) After a semiconductor wafer is mounted on the adhesive layer of a dicing tape having a substrate and an adhesive layer laminated on the substrate, the semiconductor wafer mounted on the adhesive layer is diced to separate into a plurality of semiconductor elements.

[0009] (2) After picking up a semiconductor element from the adhesive layer of the dicing tape using a clamp such as a clamp, the semiconductor element is pressed onto the sintered bonding layer of the sintered bonding sheet to divide a portion of the sintered bonding layer into a size corresponding to the size of the semiconductor element.

[0010] Then, the sintered bonding layer divided as described above is bonded to the one semiconductor element by using an organic adhesive present on the side of the contact surface with the one semiconductor element, so that the divided sintered bonding layer is transferred to the one semiconductor element.

[0011] (3) The one semiconductor element to which the divided sintered bonding layer is transferred is bonded to a semiconductor element mounting region of a substrate having a plurality of semiconductor element mounting regions by using an organic adhesive present on the surface opposite to the surface abutting against the one semiconductor element.

[0012] That is, the one semiconductor element is temporarily fixed to one semiconductor element mounting region of the substrate by using the organic adhesive.

[0013] (4) By implementing the above (2) and (3) multiple times, multiple semiconductor elements are temporarily fixed to each of the multiple semiconductor element mounting areas in the above substrate using the divided multiple sintered bonding layers, thereby obtaining an intermediate product of a semiconductor device.

[0014] (5) By heating the intermediate product of the semiconductor device at a temperature at which the sinterable particles in the sintered bonding layer can be sintered to each other, the sinterable particles are sintered to each other in the sintered bonding layer, and by causing at least a portion of the organic binder to disappear from the sintered bonding layer, the plurality of semiconductor elements are respectively bonded to respective regions of the mounting regions of the plurality of semiconductor elements in the substrate.

[0015] It should be noted that after this step, the plurality of semiconductor elements are fixed to each of the plurality of semiconductor element mounting regions in the substrate by sintering the sinterable particles contained in the plurality of divided sintered bonding layers.

[0016] That is, the plurality of semiconductor elements are fixed to each of the plurality of semiconductor element mounting regions in the substrate using a sintered body formed by sintering the sinterable particles.

[0017] In addition, it is known that a sheet for sintering bonding formed in a strip shape as described above is wound in the longitudinal direction to form a wound sheet (hereinafter referred to as a wound sheet for sintering bonding) (for example, Patent Document 2 listed below).

[0018] In the production of a semiconductor device using the above-mentioned roll sheet for sinter bonding, the above-mentioned step (2) may be performed using a roll-to-roll device including a delivery roll and a take-up roll.

[0019] Specifically, sometimes a sintering bonding winding sheet mounted on a withdrawal roller is drawn out along the length direction toward a winding roller, and a clamp such as a clamp is used to press the sintering bonding layer of the sintering bonding winding sheet, so that a part of the sintering bonding layer is divided in a manner corresponding to the size of the semiconductor element, and the divided sintering bonding layer is transferred to the semiconductor element.

[0020] Prior art literature

[0021] Patent Literature

[0022] Patent Document 1: Japanese Patent Application Publication No. 2020-150188

[0023] Patent Document 2: Japanese Patent Application Publication No. 2020-147706 Summary of the invention

[0024] Problem that the invention aims to solve

[0025] However, in the manufacture of semiconductor devices using the above-mentioned belt-shaped wound sheet for sinter bonding, there are cases where a sufficient effective area for transfer to a semiconductor element cannot be ensured for the sinter bonding layer provided on the wound sheet for sinter bonding.

[0026] As described above, if the effective region in the sintered bonding layer cannot be sufficiently ensured, the ratio of the entire sintered bonding layer that can be used for transfer will decrease.

[0027] As a result, the yield rate (specifically, the utilization rate of the sintered bonding layer) in the manufacture of the semiconductor device decreases.

[0028] However, it is difficult to say that sufficient research has been conducted on suppressing a decrease in yield in the manufacture of semiconductor devices using a wound sheet for sinter bonding.

[0029] Therefore, an object of the present invention is to provide a wound sheet for sinter bonding that can suppress a decrease in yield in manufacturing a semiconductor device.

[0030] Solutions for solving problems

[0031] The wound sheet for sintering bonding according to the present invention comprises

[0032] a first substrate and a sintered bonding layer laminated on the first substrate, wherein the wound sheet for sintered bonding is a strip-shaped sheet for sintered bonding wound along a longitudinal direction,

[0033] The sintered bonding layer contains an organic binder and sinterable particles containing a conductive metal, and the sintered bonding layer is directly laminated on the first substrate or indirectly laminated on the first substrate via a second substrate.

[0034] The length L1 of the first substrate is larger than the length L of the sintered bonding layer. S The length direction dimension L2 of the second substrate is larger than that of the second substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1A This is a side view showing the structure of a sintered bonded wound sheet according to one embodiment of the present invention.

[0036] Figure 1BIt is a perspective view showing the structure of a sinter-bonding sheet (a sinter-bonding sheet before winding) for obtaining a wound sinter-bonding sheet according to one embodiment of the present invention.

[0037] Figure 2 It is a cross-sectional view showing another structure of the sheet for sinter bonding.

[0038] Figure 3A It is a side view showing the structure of a wound sheet for sintering bonding according to another embodiment of the present invention.

[0039] Figure 3B It is a perspective view showing the structure of a sinter-bonding sheet (a sinter-bonding sheet before winding) for obtaining a wound sinter-bonding sheet according to another embodiment of the present invention.

[0040] Figure 4A It is a schematic cross-sectional view showing a state where a first semiconductor chip is lifted from a dicing tape by a clamper.

[0041] Figure 4B It is a schematic cross-sectional view showing a state where the second semiconductor chip is lifted from the dicing tape by a clamper.

[0042] Figure 5 It is a schematic diagram showing a state where the wound sheet for sintering bonding according to the present embodiment is conveyed by a roll-to-roll device.

[0043] Fig. 6A This is a schematic cross-sectional view showing a state in which a part of the sintered bonding layer of the sintered bonding sheet according to the present embodiment is transferred to the first semiconductor chip.

[0044] Figure 6B This is a schematic cross-sectional view showing a state in which a part of the sintered bonding layer of the sintered bonding sheet according to the present embodiment is transferred to the second semiconductor chip.

[0045] Fig. 7A It is a schematic cross-sectional view showing a state where the first semiconductor chip of the divided body with the sintered bonding layer is lifted up by a clamper.

[0046] Figure 7B It is a schematic cross-sectional view showing a state where the second semiconductor chip as a divided body with a sintered bonding layer is lifted up by a clamper.

[0047] Fig. 8A It is a schematic cross-sectional view showing a state where a first semiconductor chip which is a divided body with a sintered bonding layer is temporarily fixed to a first die pad of a lead frame substrate.

[0048] Figure 8BIt is a schematic cross-sectional view showing a state where the second semiconductor chip as a divided body with a sintered bonding layer is temporarily fixed to the second die pad of the lead frame substrate.

[0049] Fig.9A This is a schematic cross-sectional view showing an example of heating a lead frame substrate in which a first semiconductor chip is temporarily fixed to a first die pad and a second semiconductor chip is temporarily fixed to a second die pad via a divided body of a sintered bonding layer.

[0050] Fig. 9B This is a schematic cross-sectional view showing another example of heating a lead frame substrate in which a first semiconductor chip is temporarily fixed to a first die pad and a second semiconductor chip is temporarily fixed to a second die pad via a divided body of a sintered bonding layer.

[0051] Description of Reference Numerals

[0052] 1: first substrate, 2: second substrate, 3: third substrate, 4: fourth substrate,

[0053] 5: Sintered bonding layer,

[0054] 10A: wound sheet for sintering and bonding, 10B: sheet for sintering and bonding. DETAILED DESCRIPTION

[0055] Hereinafter, one embodiment of the present invention will be described. It should be noted that one embodiment of the present invention may be referred to as the present embodiment in some cases.

[0056] [Sintering bonding wound sheet]

[0057] like Figure 1A As shown in FIG. 1 , the wound sheet 10A for sintering bonding according to the present embodiment is Figure 1B The belt-shaped sintering bonding sheet 10B as shown is wound along the longitudinal direction L and is configured.

[0058] like Figure 1B As shown, the belt-shaped sintered bonding sheet 10B includes a first base material 1 and a sintered bonding layer 5 stacked on the first base material 1 .

[0059] In addition, the wound sheet 10A for sintering bonding according to the present embodiment also includes a first base material 1 and a sintering bonding layer 5 (see FIG. 5 ) laminated on the first base material 1, similarly to the sheet 10B for sintering bonding. Figure 1A ).

[0060] In the wound sheet 10A and the sheet 10B for sintering bonding according to the present embodiment, the sintering bonding layer 5 contains an organic binder and sinterable particles containing a conductive metal.

[0061] In addition, in this specification, the conductive metal refers to a metal having an electrical conductivity of 100 μS / cm or less as measured in accordance with JIS K 0130 (2008).

[0062] In the wound sheet 10A and the sheet 10B for sintering bonding according to the present embodiment, the sintering bonding layer 5 is indirectly laminated on the first base material 1 via the second base material 2 .

[0063] It should be noted that the sintered bonding layer 5 may be directly laminated on the first base material 1 .

[0064] In the wound sheet 10A and the sheet 10B for sintering bonding according to the present embodiment, Figure 1A and Figure 1B As shown, the third base material 3 is arranged on the side of the sintered bonding layer 5 opposite to the surface facing the first base material 1 .

[0065] It should be noted that the third base material 3 may not be provided on the opposite side of the sintered bonding layer 5 .

[0066] That is, the opposite surface of the sintered bonding layer 5 may be an exposed surface.

[0067] In the wound sheet 10A and the sheet 10B for sintering bonding according to the present embodiment, the dimension L1 of the first base material 1 in the longitudinal direction is larger than the dimension L1 of the sintering bonding layer 5 in the longitudinal direction. S The length L2 of the second substrate 2 is large (especially referring to Figure 1B ).

[0068] By providing the sintering bonding winding sheet 10A with the above-mentioned first substrate 1, when the sintering bonding winding sheet 10A is conveyed along the length direction by a roll-to-roll device 1000 while transferring a portion of the sintering bonding layer 5 to each of the plurality of semiconductor chips as described later, the two end portions in the length direction of the sintering bonding layer 5 can be fully utilized, compared to a sintering bonding winding sheet that does not have the above-mentioned first substrate 1.

[0069] That is, in the sintered bonding layer 5 , a sufficient effective area in the longitudinal direction for transferring each of the plurality of semiconductor chips can be ensured.

[0070] Thus, when a semiconductor device is manufactured using a roll-to-roll apparatus, a decrease in yield (specifically, the utilization rate of the sintered bonding layer in the longitudinal direction) can be suppressed.

[0071] The dimension L1 in the longitudinal direction of the first substrate 1 is preferably not less than 3000 mm (3 m) and not more than 120000 mm (120 m).

[0072] In addition, the length L2 of the second base material 2 and the length L of the sintered bonding layer 5 are S It is preferably 1000 mm (1 m) or more and 100000 (100 mm) or less.

[0073] The length L2 of the second base material 2 and the length L of the sintered bonding layer 5 are S They may be the same or different, but are preferably the same.

[0074] From the viewpoint of sufficiently ensuring the utilization ratio of the sintered bonding layer 5 in the longitudinal direction, L1 is preferably L S 1.1 times or more, more preferably 1.2 times or more, and even more preferably 1.3 times or more.

[0075] In addition, the inhibition caused by L1 being too long than L S From the viewpoint of delaying the timing of starting to transfer a portion of the sintered bonding layer 5 to the first semiconductor chip B1 in the roll-to-roll device 1000 described later, or preventing the time for winding the used sintered bonding sheet 10B onto the winding roll after the transfer of a portion of the sintered bonding layer 5 to each of the plurality of semiconductor chips is completed from becoming too long, L1 may be L S It can be less than 3.0 times, less than 2.0 times, less than 1.8 times, or less than 1.6 times.

[0076] L1 is preferably 1.1 times or more, more preferably 1.2 times or more, and further preferably 1.3 times or more of L2. L1 may be 3.0 times or less, 2.0 times or less, 1.8 times or less, or 1.6 times or less of L2.

[0077] As mentioned above, L S It may be the same as or different from L2, but is preferably the same.

[0078] L2 is preferably in L S The ratio of the carbonyl group to the carbonyl group is preferably in the range of 0.8 times to 1.2 times, more preferably in the range of 0.9 times to 1.1 times.

[0079] The distance ΔL1 between one end of the first substrate 1 in the longitudinal direction and one end of the sintered bonding layer 5 in the longitudinal direction may be 3000 mm (3 m) or more, 5000 mm (5 m) or more, or 10000 mm (10 m) or more.

[0080] The aforementioned ΔL1 may be less than 20000 mm (20 m), or less than 15000 mm (15 m).

[0081] Furthermore, the distance ΔL2 between the other end of the first base material 1 in the longitudinal direction and the other end of the sintered bonding layer 5 in the longitudinal direction may have the same relationship as the above-mentioned ΔL1.

[0082] ΔL1 and ΔL2 can be appropriately selected according to the roll-to-roll device used for the sintering-bonding wound sheet 10A according to the present embodiment.

[0083] For example, using Figure 5 In the case of a roll-to-roll device 1000 as shown, the aforementioned ΔL1 and the aforementioned ΔL2 can be appropriately set according to the distance ΔD1 between the shaft portion of the withdrawal roller 100 and one end of the transfer base G opposite to the shaft portion (closest to the shaft portion), and the distance ΔD2 between the shaft portion of the second winding roller 200b and the other end of the transfer base G opposite to the shaft portion (closest to the shaft portion).

[0084] In addition, use Figure 5 In the case of the roll-to-roll device 1000 shown in the figure, at least one of the ΔL1 and the ΔL2 is preferably equal to or longer than the conveying distance from the delivery end LE of the delivery roll 100 to the winding end WE of the second winding roll 200b.

[0085] Furthermore, it is more preferable that both the ΔL1 and the ΔL2 are equal to or larger than the transport distance.

[0086] By making ΔL1 equal to or greater than the aforementioned conveying distance, a sufficient length can be ensured when the sintering bonding roll sheet 10A is pulled out from the pull-out roll 100. This saves the time and effort of connecting another substrate to one end side in the longitudinal direction of the first substrate 1 to extend the length of the aforementioned one end side. As a result, the sintering bonding roll sheet 10A can be pulled out efficiently from the pull-out roll 100.

[0087] By making ΔL2 greater than the aforementioned conveying distance, a sufficient winding length can be ensured when winding the sintering bonding winding sheet 10A (used sintering bonding winding sheet 10A) after the sintering bonding layer 5 is transferred by the second winding roller 200b. Thus, the time and effort of connecting another substrate to the other end side in the longitudinal direction of the first substrate 1 to extend the length of the aforementioned other end side can be saved. As a result, the used sintering bonding winding sheet 10A can be efficiently wound up by the second winding roller 200b.

[0088] It should be noted that the aforementioned transport distance refers to the distance from the delivery end LE of the delivery roller 100 via the first transport roller 101, the second transport roller 102, the third transport roller 103, the transfer base G and the fourth transport roller 104 to the winding end WE of the second winding roller 200b.

[0089] The length L3 of the third base material 3 and the length L of the sintered bonding layer 5 areS They can be the same or different, preferably the same. L3 is preferably S The ratio of the carbonyl group to the carbonyl group is preferably in the range of 0.8 to 1.2 times, more preferably in the range of 0.9 to 1.1 times.

[0090] In the wound sheet 10A and the sheet 10B for sintering bonding according to the present embodiment, the sintering bonding layer 5 and the second base material 2 are continuously laminated on the first base material 1 along the longitudinal direction (see Figure 1A and Figure 1B ).

[0091] On the other hand, the sintered bonding layer 5 and the second base material 2 are Figure 2 As shown, the layers may be intermittently stacked on the first substrate 1 along the length direction.

[0092] like Figure 2 As shown, when the sintered bonding layer 5 and the second base material 2 are intermittently stacked on the first base material 1 along the longitudinal direction, the third base material 3 may also be intermittently stacked on the sintered bonding layer 5 .

[0093] Figure 2 When the sintered bonding sheet 10B shown is wound in the longitudinal direction to form a wound sintered bonding sheet 10A, it goes without saying that in the wound sintered bonding sheet 10A, the sintered bonding layer 5, the second base material 2 and the third base material 3 are also intermittently stacked on the first base material 1 in the longitudinal direction.

[0094] In the wound sheet 10A and the sheet 10B for sintering bonding according to the present embodiment, the surface area S1 of the first base material 1 when viewed from above is preferably larger than the surface area S2 of the sintering bonding layer 5 when viewed from above. S The surface area S2 when viewing the second substrate 2 from above is large.

[0095] By making the surface area S1 of the first base material 1 larger than the surface area S1 of the sintered bonding layer 5 when viewed from above S The surface area S2 when looking down at the second substrate 2 is large, so that the first substrate 1 can be arranged at a position further outside the sintered bonding layer 5 and the second substrate 2 in at least one of the length direction L and the width direction W of the sintered bonding wound sheet 10A and the sintered bonding sheet 10B.

[0096] When the first substrate 1 is arranged outside the sintered bonding layer 5 and the second substrate 2 in the longitudinal direction L, as described above, a sufficient effective area in the longitudinal direction L for transferring each of the plurality of semiconductor chips can be ensured in the sintered bonding layer 5 .

[0097] As described below, when a semiconductor device is manufactured using the roll-to-roll device 1000 , it is possible to suppress a decrease in yield (specifically, a utilization ratio of the sintered bonding layer 5 in the longitudinal direction L).

[0098] In addition, as described later, when the sintering bonding roll sheet 10A is transported along the length direction L using a roll-to-roll device 1000 while a portion of the sintering bonding layer 5 is transferred to each of multiple semiconductor chips, the two end portions of the pulled-out sintering bonding roll sheet 10A in the width direction W are held on the transfer base G using a clamp or the like.

[0099] Therefore, if the sintered bonding layer 5 is formed to both end portions in the width direction W of the drawn out wound sheet 10A for sintered bonding, more portions of the sintered bonding layer 5 are held by the jig.

[0100] However, when the first base material 1 is arranged outside the sintered bonding layer 5 and the second base material 2 in the width direction W, the portions held by the jig at both ends in the width direction W of the sintered bonding layer 5 can be reduced or eliminated.

[0101] Thus, in the sintered bonding layer 5 , a sufficient effective area in the width direction W for transferring each of the plurality of semiconductor chips can be ensured.

[0102] As a result, when the semiconductor device is manufactured using a roll-to-roll apparatus, a decrease in yield (specifically, a utilization ratio of the sintered bonding layer 5 in the width direction W) can be suppressed.

[0103] When the first substrate 1 is arranged outside the sintered bonding layer 5 and the second substrate 2 in both the length direction L and the width direction W, a decrease in the utilization ratio of the sintered bonding layer 5 in both the length direction L and the width direction W can be suppressed.

[0104] The surface area S1 is preferably the surface area S S 1.5 times or more, more preferably 1.8 times or more, and even more preferably 2.0 times or more.

[0105] Alternatively, the surface area S1 may be the surface area S S It can be less than 3.0 times, less than 2.5 times, or less than 2.2 times.

[0106] It should be noted that when the sintered bonding layer 5 is intermittently laminated on the first substrate 1, the surface area S S It refers to the total value of the surface area of ​​each intermittently stacked sintered bonding layer 5 .

[0107] When the second substrate 2 is intermittently laminated on the first substrate 1 , the surface area S2 refers to the total value of the surface areas of the intermittently laminated second substrates 2 .

[0108] In addition, the surface area S1 of the first base material 1 when viewed in plan is preferably larger than the surface area S3 of the third base material 3 when viewed in plan.

[0109] The surface area S1 is preferably 1.5 times or more, more preferably 1.8 times or more, and even more preferably 2.0 times or more of the surface area S3.

[0110] In addition, the surface area S1 may be 3.0 times or less, 2.5 times or less, or 2.2 times or less of the surface area S3.

[0111] It should be noted that, when the third base materials 3 are intermittently stacked on the sintered bonding layer 5 , the surface area S3 refers to the total value of the surface areas of the respective third base materials 3 that are intermittently stacked.

[0112] The width dimension W1 of the first base material 1 is preferably larger than the width dimension W1 of the sintered bonding layer 5. S The dimension W2 in the width direction of the second base material 2 is large.

[0113] As described below, when the semiconductor device is manufactured using the roll-to-roll device 1000 , it is possible to further suppress a decrease in the yield (specifically, the utilization ratio of the sintered bonding layer 5 in the width direction W).

[0114] The dimension W1 in the width direction of the first substrate 1 is preferably not less than 20 mm (2 cm) and not more than 1000 mm (100 cm).

[0115] The width dimension W2 of the second base material 2 and the width dimension W of the sintered bonding layer 5 are S It is preferably 10 mm (1 cm) or more and 500 (50 cm) or less.

[0116] The width dimension W2 of the second base material 2 and the width dimension W2 of the sintered bonding layer 5 are S Can be the same or different.

[0117] W1 is preferably W S 1.1 times or more, more preferably 1.2 times or more, and even more preferably 1.3 times or more.

[0118] W1 can be W S It can be less than 2.0 times, less than 1.8 times, or less than 1.6 times.

[0119] W1 is preferably 1.1 times or more, more preferably 1.2 times or more, and even more preferably 1.3 times or more of W2.

[0120] W1 may be 2.0 times or less, 1.8 times or less, or 1.6 times or less of W2.

[0121] W S and W2 may be the same or different, preferably the same.

[0122] W2 is preferred in W S The ratio of the carbonyl group to the carbonyl group is preferably in the range of 0.8 times to 1.2 times, more preferably in the range of 0.9 times to 1.1 times.

[0123] The distance ΔW1 between one end of the first substrate 1 in the width direction and one end of the sintered bonding layer 5 in the width direction may be 3 mm or more, 5 mm or more, 10 mm or more, or 20 mm or more.

[0124] The aforementioned ΔW1 may be less than 100 mm, may be less than 50 mm, or may be less than 30 mm.

[0125] Furthermore, the distance ΔW2 between the other end in the width direction of the first base material 1 and the other end in the width direction of the sintered bonding layer 5 may have the same relationship as the above-mentioned ΔW1.

[0126] ΔW1 and ΔW2 can be appropriately selected according to the size of the first base material 1 held by the jig at both ends in the width direction of the wound sheet 10A for sintering bonding according to the present embodiment.

[0127] For example, ΔW1 and ΔW2 may be set to a size larger than the aforementioned size held by the jig.

[0128] It is preferable that the dimension W1 of the first base material 1 in the width direction is larger than the dimension W3 of the third base material 3 in the width direction.

[0129] W1 is preferably 1.1 times or more, more preferably 1.2 times or more, and even more preferably 1.3 times or more of W3.

[0130] W1 may be 2.0 times or less, 1.8 times or less, or 1.6 times or less of W3.

[0131] W3 and W S They may be the same or different, preferably the same.

[0132] W3 is preferred in W S The ratio of the carbonyl group to the carbonyl group is preferably in the range of 0.8 times to 1.2 times, more preferably in the range of 0.9 times to 1.1 times.

[0133] The sintered bonding layer 5 of the sintered bonding wound sheet 10A and the sintered bonding sheet 10B is temporarily fixed to a substrate or transferred to a semiconductor chip by the organic binder contained in the sintered bonding layer 5 .

[0134] That is, when the sintered bonding layer 5 is temporarily fixed to the substrate or transferred to the semiconductor chip, the organic binder remains in the sintered bonding layer 5 .

[0135] On the other hand, the sintered bonding layer 5 bonds the semiconductor chip to the substrate by sintering sinterable particles contained in the sintered bonding layer 5 .

[0136] That is, in a state where the semiconductor chip is bonded to the substrate, at least a part of the organic binder disappears in the sintered bonding layer 5 .

[0137] Furthermore, as described above, considering that the semiconductor chip is bonded to the substrate by sintering the sinterable particles, the amount of the organic binder remaining in the sintered bonding layer 5 is preferably as small as possible.

[0138] That is, in the sintered bonding layer 5 , preferably, the organic binder hardly remains, and more preferably, does not remain at all.

[0139] Examples of the conductive metal include gold, silver, copper, palladium, tin, and nickel.

[0140] Furthermore, the conductive metal may be an alloy of two or more metals selected from the group consisting of gold, silver, copper, palladium, tin, and nickel.

[0141] Furthermore, the conductive metal may be a metal oxide such as silver oxide, copper oxide, palladium oxide, and tin oxide.

[0142] In the wound sheet 10A and the sheet 10B for sintering bonding according to the present embodiment, the sinterable particles preferably contain at least one selected from the group consisting of silver, copper, silver oxide, and copper oxide as the conductive metal.

[0143] The above-mentioned sintered particles contain at least one selected from the group consisting of silver, copper, silver oxide and copper oxide as the above-mentioned conductive metal, so that when the semiconductor element is bonded to the mounting area of ​​the semiconductor element in the substrate with the help of the divided sintered bonding layer 5 (the divided body 2' of the sintered bonding layer) as described later, the bonding brought by the divided sintered bonding layer 5 (the divided body 2' of the sintered bonding layer) can be fully improved.

[0144] In addition, from the viewpoint of providing the sintered bonding layer 5 with high electrical conductivity and high heat dissipation, the sinterable particles preferably contain silver or copper as the conductive metal.

[0145] Furthermore, in consideration of oxidation resistance, silver is preferably used as the conductive particles.

[0146] For example, by sintering the above-mentioned sinterable particles to each other in the divided sintered bonding layer 5 (the divided body 2' of the sintered bonding layer), when a semiconductor element such as a semiconductor chip is bonded to a chip pad of a lead frame substrate, if the above-mentioned conductive particles are copper, it is necessary to carry out the above-mentioned bonding in an inactive environment such as a nitrogen atmosphere, but if the above-mentioned conductive particles are silver, the above-mentioned bonding can be suitably carried out even in an air atmosphere.

[0147] In the wound sheet 10A and the sheet 10B for sintered bonding described in this embodiment, the sinterable particles may be particles of a core-shell structure having a core portion and a shell portion covering the core portion. The conductive metal constituting the core portion may include copper as a main component, and the conductive metal constituting the shell portion may include gold or silver as a main component.

[0148] As the shape of the sinterable particles, for example, particles in the form of flakes, needles, filaments, spheres, or flat shapes (including scales) can be used. Among these, spherical particles are preferred.

[0149] By using spherical particles as the sinterable particles, the dispersibility of the sinterable particles can be improved in the varnish for obtaining the sintered bonding layer 5 described later.

[0150] The sinterable particles can be sintered at a heating temperature of 400° C. or lower. Being sinterable at a heating temperature of 400° C. or lower means that necking is observed on the outer surfaces of the particles when heated at a temperature of 400° C. or lower.

[0151] The sintering temperature of the sinterable particles can be measured using a thermogravimetric differential thermal analyzer.

[0152] Specifically, by using a thermogravimetric differential thermal analyzer (e.g., differential thermal balance TG8120 manufactured by Rigaku Corporation), measurements are performed under the following conditions to obtain a Tg curve and a DTA curve, and the temperature of the maximum peak of the DTA curve confirmed near the drop of the Tg curve is obtained.

[0153] <Measurement Conditions>

[0154] Heating rate: 10℃ / min

[0155] ·Measurement atmosphere: Atmosphere

[0156] ·Measurement temperature range: room temperature (23±2℃)~500℃

[0157] The sinterable particles containing gold, silver, copper, palladium, tin, nickel, and alloys thereof as the conductive metal can be sintered at a heating temperature of 400° C. or lower, for example.

[0158] The average particle size of the sinterable particles is preferably 1 nm or more, more preferably 10 nm or more, and even more preferably 50 nm or more.

[0159] By setting the average particle size of the sinterable particles to be equal to or larger than the above lower limit, the dispersibility of the sinterable particles can be improved in the varnish for obtaining the sintered bonding layer 5 described later.

[0160] In this way, the sinterable particles are appropriately dispersed in the obtained sintered bonding layer 5 .

[0161] The average particle size of the sinterable particles is preferably 10,000 nm or less, more preferably 3,000 nm or less, further preferably 1,000 nm or less, and further preferably 500 nm or less.

[0162] By setting the average particle size of the sinterable particles to be equal to or smaller than the upper limit value, the surface of the sintered bonding layer 5 can be made relatively smooth.

[0163] The average particle size of the sinterable particles can be determined by observing a cross section of the sintered bonding layer 5 using a scanning electron microscope (SEM).

[0164] Specifically, it can be obtained by the following steps.

[0165] (1) A sintered bonding layer 5 having a plane size of 10 mm×10 mm and a thickness of 50 μm (0.05 mm) is prepared.

[0166] (2) A sintered bonding layer 5 and a chip (with a plane size of 10 mm×10 mm and a thickness of 0.2 mm) having a second electrode portion are sequentially arranged on a substrate (with a plane size of 10 mm×10 mm and a thickness of 3 mm) having a first electrode portion on a surface thereof to obtain a laminate, and then the laminate is subjected to a sintering treatment to obtain a sintered bonded body. The sintering treatment is carried out under the conditions of heating from 80°C to 300°C at a heating rate of 1.5°C / second under a pressure of 10 MPa and then maintaining the temperature at 300°C for 2.5 minutes.

[0167] It should be noted that the sintered bonding layer 5 is arranged on the substrate so as to abut against the first electrode portion, and the chip is arranged so as to abut against the exposed surface of the sintered bonding layer 5 .

[0168] (3) After the entire outer surface of the sintered bonded body is embedded with an embedding resin (for SEM), the outer surface of the embedded sintered bonded body is polished to perform surface conditioning.

[0169] (4) The surface-conditioned sintered bonded body is cut in the thickness direction using a grinding device to obtain a sample for SEM observation.

[0170] (5) The average particle size of the sinterable particles is determined by observing a cut surface of the sample for SEM observation using an SEM and acquiring an image of the cut surface, and then performing image analysis on the acquired image.

[0171] The image was acquired under the condition of an accelerating voltage of 3 kV, and the image analysis was performed using a SEM image magnified 10,000 times or 100,000 times according to the size of the sinterable particles.

[0172] It should be noted that the image analysis may be performed by binarizing the acquired image so that the sinterable particles included in the cut surface can be individually identified.

[0173] Furthermore, the average particle size of the sinterable particles can be obtained by calculating the equivalent circle diameter of each of the sinterable particles included in the cut surface and then taking the arithmetic average of the calculated values ​​of the equivalent circle diameter. In addition, the sinterable particles whose outer shapes are not fully exposed in the cut surface are excluded from the calculation of the equivalent circle diameter.

[0174] The circle-equivalent diameter refers to a diameter obtained by calculating the area of ​​the sinterable particles on the cut surface and then finding a perfect circle having an area equivalent to the area.

[0175] When the conductive metal is silver, that is, when the sinterable particles are silver particles, the silver particles may be silver particles composed of silver element and other elements (metal elements, etc.) contained as inevitable impurity elements, or may be silver particles subjected to surface treatment (such as silane coupling treatment). Examples of the surface treatment agent for the silver particles include fatty acid-based, amine-based, or epoxy-based covering agents.

[0176] In addition, below, silver particles surface-treated with a fatty acid-based, amine-based, epoxy-based or other coating agent may be referred to as coating agent-treated silver particles.

[0177] By treating silver particles with a coating agent as the sinterable particles, the affinity between the organic binder and the sinterable particles can be improved in the sintered bonding layer 5 before at least a portion of the organic binder disappears by a heat treatment in the manufacture of a semiconductor device described later.

[0178] Thereby, the sinterable metal particles can be dispersed more easily in the sintered bonding layer 5 before at least a part of the organic binder disappears.

[0179] It should be noted that, as will be described later in the production of a semiconductor device, the organic binder disappears at least partially from the sintered bonding layer 5 by heating the sintered bonding layer 5 at a temperature higher than a predetermined temperature.

[0180] In the winding sheet 10A for sintering bonding and the sheet 10B for sintering bonding described in this embodiment, the content ratio SC of the above-mentioned sinterable particles in the sintering bonding layer 5 is preferably greater than 60 mass % and less than 99 mass %, more preferably greater than 65 mass % and less than 98 mass %, further preferably greater than 70 mass % and less than 97 mass %, and further preferably greater than 85 mass % and less than 97 mass %.

[0181] By setting the content ratio SC of the sinterable particles within the above numerical range, the sinterable particles in the sintered bonding layer 5 are sintered to each other, and highly reliable bonding can be achieved when a semiconductor element such as a semiconductor chip is bonded to a die pad of a lead frame substrate.

[0182] The content ratio SC of the sinterable particles in the sintered bonding layer 5 can be obtained by determining the amount of ash remaining after burning the sintered bonding layer 5 .

[0183] The content ratio SC of the sinterable particles can be measured using, for example, a thermogravimetric analyzer (for example, TG209F1).

[0184] The measurement using the aforementioned thermogravimetric analyzer can be performed, for example, according to the following procedure.

[0185] (1) About 50 mg of the sintered bonding layer 5 is used as a measurement sample, and the temperature of the measurement sample is increased from room temperature (23±2° C.) to 650° C.

[0186] (2) The organic binder in the sintered bonding layer 5 is thermally decomposed by maintaining the temperature at 650° C. for 30 minutes.

[0187] (3) The ratio of the mass of the residual component (ash) to the mass of the measurement sample before heat treatment (about 50 mg) is determined.

[0188] It should be noted that the measurement using the aforementioned thermogravimetric analyzer may be performed under an atmospheric gas flow or a nitrogen gas flow.

[0189] Here, copper particles are easily affected by oxidation at the above-mentioned analysis temperature. Therefore, when the sintered bonding layer 5 includes copper particles as the sinterable particles, the measurement using the thermogravimetric analyzer is preferably performed under a nitrogen gas flow.

[0190] In the wound sheet 10A and the sheet 10B for sinter bonding, the sinter bonding layer 5 preferably contains, as the organic binder, a first organic binder and a second organic binder having a molecular weight smaller than that of the first organic binder.

[0191] The first organic binder is preferably a thermally decomposable polymer binder.

[0192] The thermally decomposable polymer binder is a binder that thermally decomposes during a high-temperature heating process for forming a sintered bond by sintering the sinterable particles.

[0193] The thermally decomposable polymer binder is an element that contributes to maintaining the sintered bonding layer 5 in a sheet shape until the high-temperature heating process.

[0194] From the viewpoint of ensuring the function of maintaining the sintered bonding layer 5 in a sheet shape, the thermally decomposable polymer binder is preferably a material that is solid at room temperature (23±2° C.).

[0195] Examples of such a thermally decomposable polymer binder include polycarbonate resins and acrylic resins.

[0196] That is, the sintered bonding layer 5 preferably contains at least one of the polycarbonate resin and the acrylic resin as the first organic binder.

[0197] Alternatively, the sintered bonding layer 5 may contain only the polycarbonate resin as the first organic binder.

[0198] Examples of the polycarbonate resin include aliphatic polycarbonates that do not contain aromatic compounds such as benzene rings between carbonates (-OCOO-) in the main chain and are composed of aliphatic chains, and aromatic polycarbonates that contain the aromatic compounds between carbonates (-OCOO-) in the main chain.

[0199] Examples of the aliphatic polycarbonate include polyethylene carbonate and polypropylene carbonate.

[0200] Examples of the aromatic polycarbonate include polycarbonates containing a bisphenol A structure in the main chain.

[0201] Examples of the acrylic resin include at least one of polymers of acrylic acid esters and methacrylic acid esters having a linear or branched alkyl group having 4 to 18 carbon atoms.

[0202] Hereinafter, “(meth)acrylic” means at least one of “acrylic” and “methacrylic”, and “(meth)acrylate” means at least one of “acrylate” and “methacrylate”.

[0203] Examples of the alkyl group of the (meth)acrylate constituting the acrylic resin as the thermally decomposable polymer binder include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, an isobutyl group, an amyl group, an isopentyl group, a hexyl group, a heptyl group, a cyclohexyl group, a 2-ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, and an octadecyl group.

[0204] The aforementioned acrylic resin may be a polymer including a monomer unit derived from a monomer other than the aforementioned (meth)acrylic acid ester.

[0205] Examples of the other monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, sulfonic acid group-containing monomers, and phosphoric acid group-containing monomers.

[0206] Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid.

[0207] Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride.

[0208] Examples of the hydroxyl-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and 4-(hydroxymethyl)cyclohexylmethyl (meth)acrylate.

[0209] Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamidepropanesulfonic acid, sulfopropyl (meth)acrylate, and (meth)acryloyloxynaphthalenesulfonic acid.

[0210] Examples of the phosphoric acid group-containing monomer include 2-hydroxyethyl acryloyl phosphate.

[0211] The mass average molecular weight of the first organic binder is preferably 10,000 or more.

[0212] The mass average molecular weight of the first organic binder is a value measured by gel permeation chromatography (GPC) and calculated in terms of polystyrene.

[0213] The second organic binder is preferably a low boiling point binder.

[0214] The low boiling point binder is a binder component having a boiling point lower than the thermal decomposition starting temperature of the thermally decomposable polymer binder.

[0215] In the present embodiment, the low boiling point binder refers to a binder having a viscosity at 23° C. measured using a dynamic viscoelasticity measuring apparatus (trade name “HAAKEMARS III”, manufactured by Thermo Fisher Scientific) of 1×10 5 Liquid or semi-liquid adhesive with a pressure below Pa·s.

[0216] In this viscosity measurement, a 20 mm φ parallel plate was used as a fixture, the gap between the plates was set to 100 μm, and the shear rate in the rotational shear was set to 1 s. -1 .

[0217] Examples of the low boiling point binder include terpene alcohols, alcohols other than terpene alcohols, alkylene glycol alkyl ethers, and ethers other than alkylene glycol alkyl ethers.

[0218] Examples of the terpene alcohols include isobornylcyclohexanol, citronellol, geraniol, nerol, carveol, and α-terpineol.

[0219] Examples of alcohols other than the above-mentioned terpene alcohols include pentanol, hexanol, heptanol, octanol, 1-decanol, ethylene glycol, diethylene glycol, propylene glycol, butanediol, and 2,4-diethyl-1,5-pentanediol.

[0220] Examples of the alkylene glycol alkyl ethers include ethylene glycol butyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, diethylene glycol isobutyl ether, diethylene glycol hexyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, diethylene glycol butyl methyl ether, diethylene glycol isopropyl methyl ether, triethylene glycol methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, propylene glycol propyl ether, dipropylene glycol methyl ether, dipropylene glycol ethyl methyl ether, dipropylene glycol propyl ether, dipropylene glycol butyl ether and tripropylene glycol dimethyl ether.

[0221] Examples of ethers other than the aforementioned alkylene glycol alkyl ethers include diethylene glycol ethyl ether acetate, ethylene glycol butyl ethyl acetate, diethylene glycol ethyl ether acetate, diethylene glycol butyl ethyl acetate, and dipropylene glycol methyl ether acetate.

[0222] The low boiling point binder may be used alone or in combination of two or more.

[0223] As the low-boiling point binder, the terpene alcohols are preferably used from the viewpoint of stability at room temperature, and among the terpene alcohols, the isobornylcyclohexanol is more preferably used.

[0224] The isobornylcyclohexanol is a compound represented by the following formula (1).

[0225] The aforementioned isobornyl cyclohexanol is an organic compound having a boiling point of 308 to 318°C, and has the following properties: when the temperature is raised from room temperature (23±2°C) to 600°C under a nitrogen gas flow of 200 mL / min and a temperature rise condition of 10°C / min, the mass begins to decrease significantly from 100°C or above, and evaporates and disappears at 245°C (no mass reduction above this degree is confirmed), and has the following properties: it exhibits an extremely high viscosity of 1,000,000 mPa·s at 25°C, but exhibits a relatively low viscosity of 1,000 mPa·s or less at 60°C. It should be noted that the mass reduction is a value when the mass reduction rate at the measurement start temperature (room temperature) is set to 0%.

[0226] As described above, isobornylcyclohexanol shows extremely high viscosity at 25°C, and thus can maintain the sheet shape at room temperature, but shows relatively low viscosity at 60°C, and thus has adhesiveness. That is, the sintered bonding sheet 10B having the sintered bonding layer 5 containing isobornylcyclohexanol tends to have excellent sheet shape maintenance at room temperature and has adhesiveness at a temperature of 60°C or higher.

[0227] Here, when a semiconductor element adhered to one surface of the sintered bonding layer 5 is fixed to a lead frame substrate, etc., the semiconductor element is usually temporarily bonded (temporarily fixed) to the adherend such as the lead frame substrate with the aid of the sintered bonding layer 5 at a temperature of 60 to 80°C, but isobornyl cyclohexanol has adhesion above 60°C as described above.

[0228] Therefore, in the sintered bonding sheet 10B according to the present embodiment, when the sintered bonding layer 5 contains isobornyl cyclohexanol as the second organic binder, the temporary fixation of the sintered bonding layer 5 to the adherend such as the lead frame substrate is further improved. That is, in the temporarily fixed state, the mounting position of the semiconductor element is suppressed from shifting or the sintered bonding layer 5 is suppressed from floating from the adherend.

[0229]

[0230] When the sintered bonding layer 5 includes the first organic binder and the second organic binder having a molecular weight smaller than that of the first organic binder as the organic binder, the content of the second organic binder may be higher than that of the first organic binder.

[0231] In this case, when the content ratio of the first organic binder is BC1 and the content ratio of the second organic binder is BC2, the BC1 and BC2 preferably satisfy the relationship of BC1:BC2=6:4 to 0.5:9.5.

[0232] The aforementioned BC1 and the aforementioned BC2 more preferably satisfy the relationship of BC1:BC2=5:5 to 1:9, and more preferably satisfy the relationship of BC1:BC2=4:6 to 2:8.

[0233] The content ratio BC1 of the first organic binder is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, further preferably 0.10% by mass or more, and further preferably 0.20% by mass or more.

[0234] The content ratio BC1 of the first organic binder is preferably 20% by mass or less, more preferably 10% by mass or less, further preferably 7.5% by mass or less, and further preferably 5.0% by mass or less.

[0235] The content ratio BC2 of the second organic binder is preferably 0.5% by mass or more, more preferably 1.0% by mass or more, further preferably 1.5% by mass or more, and further preferably 2.0% by mass or more.

[0236] The content ratio BC2 of the second organic binder is preferably 20% by mass or less, more preferably 15% by mass or less, and even more preferably 10% by mass or less.

[0237] In the wound sheet 10A and the sheet 10B for sintering bonding according to the present embodiment, the thickness of the sintering bonding layer 5 is preferably 5 μm or more, more preferably 10 μm or more.

[0238] In the wound sheet 10A and the sheet 10B for sintering bonding according to the present embodiment, the thickness of the sintering bonding layer 5 is preferably 300 μm or less, and more preferably 150 μm or less.

[0239] The thickness of the sintered bonding layer 5 can be determined by, for example, measuring the thickness of five randomly selected locations using a digital micrometer (manufactured by PEACOCK, model: R-205) and taking the arithmetic average of these thicknesses.

[0240] The sintered bonding layer 5 can be produced, for example, by dissolving / suspending the sinterable particles and the organic binder in an organic solvent to prepare a varnish, applying the varnish to a predetermined thickness on the first substrate 1 to form a coating film, and then drying the coating film.

[0241] As the organic solvent used for preparing the varnish, for example, alcohols such as ethanol or ketones such as methyl ethyl ketone (MEK) can be used.

[0242] The first substrate 1 is Figure 1A The wound sheet 10A for sintering and bonding Figure 1B The sintered bonding sheet 10B functions as a support.

[0243] The first substrate 1 is composed of, for example, a plastic substrate.

[0244] As the plastic substrate, a plastic film is preferably used.

[0245] Examples of the constituent material of the aforementioned plastic substrate include polyolefin resins, polyester resins, polyurethane resins, polycarbonate resins, polyetheretherketone resins, polyimide resins, polyetherimide resins, polytetrafluoroethylene resins, polyamide resins, wholly aromatic polyamide resins, polyvinyl chloride resins, polyvinylidene chloride resins, polyphenylene sulfide resins, aromatic polyamide resins, fluororesins, cellulose resins, and silicone resins.

[0246] Examples of the polyolefin resin include polyethylene resins, polypropylene resins, polybutene resins, polymethylpentene resins, ethylene-vinyl acetate copolymer resins, ionomer resins, ethylene-butene copolymer resins, and ethylene-hexene copolymer resins.

[0247] Examples of the polyethylene resin include low-density polyethylene resin, linear low-density polyethylene resin, medium-density polyethylene resin, high-density polyethylene resin, and ultra-low-density polyethylene resin.

[0248] Examples of the polypropylene resin include random copolymer polypropylene resins, block copolymer polypropylene resins, and homopolymer polypropylene resins.

[0249] Examples of the polyester resin include polyethylene terephthalate resin, polyethylene naphthalate resin, and polybutylene terephthalate resin.

[0250] The first base material 1 may be composed of one constituent material or may be composed of two or more constituent materials.

[0251] The first substrate 1 may have a single-layer structure or a multi-layer structure.

[0252] It should be noted that a single-layer structure refers to a structure composed of one type of constituent material. For example, a structure in which two or more layers composed of one type of constituent material are stacked is classified as a single-layer structure.

[0253] In contrast, a multilayer structure refers to a structure in which two or more layers composed of different constituent materials are stacked.

[0254] When the first substrate 1 is formed of a plastic film, the first substrate 1 may be composed of a non-stretched film or a stretched film.

[0255] In addition, the stretched film may be a uniaxially stretched film or a biaxially stretched film.

[0256] The plastic substrate is preferably composed of the polyolefin resin, the polyester resin, the polyimide resin, or the polytetrafluoroethylene resin.

[0257] In addition, the polyolefin resin is preferably the polyethylene resin. The polyester resin is preferably the polyethylene terephthalate resin.

[0258] Examples of commercially available plastic substrates made of the polyethylene resin include "E-MASK (registered trademark) R-100" and "E-MASK (registered trademark) R-200" manufactured by Nitto Denko Corporation and "SUNMAP LC-T5320T" manufactured by Nitto Denko Corporation.

[0259] It should be noted that “SUNMAP LC-T5320T” is a porous plastic substrate having a porosity of 30%.

[0260] Examples of commercially available plastic substrates made of the polyethylene terephthalate resin include "E-MASK (registered trademark) CP170" manufactured by Nitto Denko Corporation.

[0261] Examples of commercially available plastic substrates made of the polyimide resin include "TRM-6250L" manufactured by Nitto Denko Corporation.

[0262] Examples of commercially available plastic substrates made of the polytetrafluoroethylene resin include "NIFTRON (registered trademark) 9030UL" manufactured by Nitto Denko Corporation.

[0263] The first base material 1 preferably has a thickness of 30 μm or more and 150 μm or less.

[0264] The first substrate 1 more preferably has a thickness of 31 μm or more, and more preferably has a thickness of 35 μm or more.

[0265] The first substrate 1 more preferably has a thickness of 148 μm or less, and more preferably has a thickness of 145 μm or less.

[0266] The thickness of the first substrate 1 can be determined by, for example, measuring the thickness of five randomly selected locations using a digital micrometer (manufactured by PEACOCK, model: R-205) and calculating the arithmetic average of these thicknesses.

[0267] The first base material 1 has a contact surface with the sintered bonding layer 5 or the second base material 2 , and the Young's modulus at 23° C. measured by the nanoindentation method on the contact surface is preferably 0.5 GPa or more and 5.0 GPa or less.

[0268] By setting the Young's modulus to 5.0 GPa or less, when the first semiconductor chip B1 or the second semiconductor chip B2 is pressed against the sintered bonding layer 5 using the clamp A as described later, it is easy to apply pressing force to the entire portion of the sintered bonding layer 5 that contacts the first semiconductor chip B1 or the second semiconductor chip B2.

[0269] As a result, a part of the sintered bonding layer 5 is easily and sufficiently transferred to the first semiconductor chip B1 or the second semiconductor chip B2 .

[0270] As described later, when the first substrate 1 is placed on the buffer member CM and the first semiconductor chip B1 or the second semiconductor chip B2 is pressed against the sintered bonding layer 5 using the clamper A, the pressing can sufficiently suppress the repulsive force of the first substrate 1 .

[0271] As a result, a part of the sintered bonding layer 5 can be more fully transferred to the first semiconductor chip B1 or the second semiconductor chip B2 .

[0272] Furthermore, by setting the Young's modulus to 0.5 GPa or more, when the first semiconductor chip B1 or the second semiconductor chip B2 is pressed against the sintered bonding layer 5 using the clamp A as described later, sufficient pressing force can be easily applied in the direction of pressing the first semiconductor chip B1 or the second semiconductor chip B2.

[0273] That is, it is possible to sufficiently suppress the pressing force from being dispersed in directions other than the pressing direction, for example, in a direction orthogonal to the pressing direction.

[0274] As a result, a part of the sintered bonding layer 5 is easily and sufficiently transferred to the first semiconductor chip B1 or the second semiconductor chip B2 .

[0275] The Young's modulus is more preferably 0.7 GPa or more, and more preferably 0.9 GPa or more.

[0276] The Young's modulus is more preferably 4.0 GPa or less, and more preferably 3.5 GPa or less.

[0277] The Young's modulus can be determined by the nanoindentation method of ISO14577 (instrumented indentation test).

[0278] Specifically, the hardness can be measured using a microhardness tester (manufactured by Shimadzu Corporation, DUH-211) under the following conditions.

[0279] Indenter: Berkovich Indenter

[0280] Test mode: load-unload test

[0281] Test force: 0.98mN

[0282] Minimum test force: 0.002mN

[0283] Loading and unloading speed: 1.0mN / sec

[0284] Load holding time: 5.0 seconds

[0285] Unloading hold time: 5.0 seconds

[0286] With Cf-Ap correction

[0287] It should be noted that the nanoindentation method is a method of measuring various physical properties of a sample at the nanometer level.

[0288] In the aforementioned nanoindentation method, at least a process of pressing an indenter onto a sample set on a base (load application process) and a process of subsequently pulling the indenter out of the sample (unloading process) are implemented. In a series of processes, the load acting between the indenter and the sample and the relative displacement of the indenter relative to the sample are measured.

[0289] As a result, a load-displacement curve can be obtained. Based on the load-displacement curve, physical properties of the sample (hardness, elastic modulus, adhesive strength, etc.) can be obtained based on nanometer-level measurement.

[0290] The first substrate 1 preferably has a tensile elongation of 4% or more and 350% or less at 23°C.

[0291] By setting the tensile elongation of the first substrate 1 to 4% or more at 23°C, when the sinter-bonding sheet 10B is wound up to form a sinter-bonding rolled sheet 10A, the second substrate 2 can be prevented from peeling off from the first substrate 1 due to the difference in plane dimensions between the first substrate 1 and the second substrate 2.

[0292] Furthermore, by setting the tensile elongation of the first base material 1 to 350% or less at 23° C., when the sinter-bonding sheet 10B is wound up to form the wound sinter-bonding sheet 10A, it is possible to prevent the sinter-bonding sheet 10B from becoming difficult to wind up due to excessive elongation of the first base material 1 .

[0293] The first substrate 1 has a tensile elongation of more preferably 10% or more, further preferably 30% or more, and further preferably 50% or more at 23°C.

[0294] The first substrate 1 has a tensile elongation of more preferably 300% or less, further preferably 200% or less, and further preferably 150% or less at 23°C.

[0295] The tensile elongation of the first substrate 1 at 23° C. can be determined by performing a tensile test at a tensile speed of 300 mm / min using a tensile testing machine (manufactured by Shimadzu Corporation, trade name “Autograph AG-X”).

[0296] Specifically, in the tensile test, the elongation of the first base material 1 when the tensile strength reaches the breaking point is determined as the tensile elongation.

[0297] The tensile test is performed by cutting the first substrate 1 into a test piece having a planar size of 1 cm in width x 3 cm in length and stretching the test piece in the longitudinal direction (the longitudinal direction of the first substrate 1 ).

[0298] The porosity of the first substrate 1 is preferably 10% or less.

[0299] The porosity of the first substrate 1 is more preferably 5% or less, further preferably 3% or less, and further preferably 1% or less.

[0300] The porosity of the first substrate 1 may be 0%, 0.1%, 0.3%, or 0.5% or more.

[0301] The porosity P of the first substrate 1 can be expressed using the apparent density ρ of the first substrate 1. a and the true density ρ of the first substrate 1 t , and use the following formula to calculate.

[0302] P=(1-ρ a / ρ t )×100

[0303] It should be noted that the apparent density ρ a The density can be obtained by multiplying the surface density of the first base material 1 by the thickness of the first base material 1 .

[0304] In addition, the true density ρ t The density can be determined by pulverizing the first base material 1 to obtain a sample without pores and then measuring the density of the sample using the Archimedean principle.

[0305] The second base material 2 and the third base material 3 exist to protect the surface of the sintered bonding layer 5 that faces the first base material 1 and the surface opposite to the surface.

[0306] The second substrate 2 and the third substrate 3 are preferably made of a plastic substrate like the first substrate 1 .

[0307] As the aforementioned plastic substrate, the same substrate as described in the section of the first substrate 1 can be used.

[0308] As described later, the second base material 2 and the third base material 3 preferably function as release sheets that can easily release the separated sintered bonding layer 5 (sintered bonding layer separated bodies 2 ′) when a semiconductor device is manufactured using the sintered bonding roll sheet 10A.

[0309] When the second base material 2 and the third base material 3 function as release sheets, a release agent may be applied to each surface of the second base material 2 and the third base material 3 that contacts the sintered bonding layer 5 .

[0310] The second substrate 2 and the third substrate 3 preferably have a thickness of 5 μm or more, more preferably have a thickness of 10 μm or more, and further preferably have a thickness of 20 μm or more.

[0311] The second substrate 2 and the third substrate 3 preferably have a thickness of 1000 μm or less, more preferably have a thickness of 500 μm or less, and further preferably have a thickness of 200 μm or less.

[0312] The thickness of the second substrate 2 and the third substrate 3 can be determined by, for example, measuring the thickness of five randomly selected locations using a digital micrometer (manufactured by PEACOCK, model: R-205) and calculating the arithmetic average of these thicknesses.

[0313] It should be noted that the wound sheet 10A for sintering bonding and the sheet 10B for sintering bonding are not limited to Figure 1A and Figure 1B Constructed as shown.

[0314] Specifically, the wound sheet 10A for sintering bonding and the sheet 10B for sintering bonding are not limited to the structure in which the second base material 2 , the sintering bonding layer 5 , and the third base material 3 are sequentially arranged on the first base material 1 .

[0315] For example, Figure 3A and Figure 3B As shown, the wound sheet 10A for sintered bonding and the sheet 10B for sintered bonding may include the fourth base material 4 on the surface opposite to the surface of the third base material 3 facing the sintered bonding layer 5 .

[0316] The wound sheet 10A for sintering and the sheet 10B for sintering are as follows: Figure 3A and Figure 3B When the structure is as shown, the length L4 of the fourth base material 4 is preferably larger than the length L of the sintered bonding layer 5. S , a dimension L2 in the longitudinal direction of the second substrate 2 and a dimension L3 in the longitudinal direction of the third substrate 3 are both large.

[0317] By making the length L4 of the fourth base material 4 larger than the length L of the sintered bonding layer 5, S , so that the fourth substrate 4 can be wound up on the first winding roller 200 a together with the third substrate 3 .

[0318] Thus, compared with the case where the sinter-bonding roll sheet 10A includes only the third base material 3 , it is easier to wind up the third base material 3 with the first winding roller 200 a .

[0319] That is, one surface of the sintered bonding layer 5 (the surface on the side protected by the third base material 3 ) can be easily exposed.

[0320] It should be noted that the dimension L4 of the fourth substrate 4 in the longitudinal direction may be the same as or different from the dimension L1 of the first substrate 1 in the longitudinal direction.

[0321] In addition, the surface area S4 of the fourth base material 4 when viewed from above is preferably larger than the surface area S S , the surface area S2 when looking down on the second substrate 2 and the surface area S3 when looking down on the third substrate 3 are both large.

[0322] It should be noted that the surface area S4 of the fourth substrate 4 when viewed from above may be the same as or different from the surface area S1 of the first substrate 1 when viewed from above.

[0323] Furthermore, the width dimension W4 of the fourth base material 4 is preferably larger than the width dimension W S , the dimension W3 of the second base material 2 in the width direction and the dimension W2 of the third base material 3 in the width direction are both large.

[0324] It should be noted that the dimension W4 of the fourth substrate 4 in the width direction may be the same as or different from the dimension W1 of the first substrate 1 in the width direction.

[0325] (Method for manufacturing semiconductor device)

[0326] Next, refer to Figures 4A to 9B Next, an example of a method for manufacturing a semiconductor device using the wound sheet for sinter bonding 10A according to the present embodiment will be described.

[0327] Specifically, for the use Figure 1AAn example of a method for manufacturing a semiconductor device by using a wound sheet 10A for sinter bonding in which the first base material 1, the second base material 2, the sinter bonding layer 5, and the third base material 3 are arranged in this order as shown will be described.

[0328] The manufacturing method of the semiconductor device described in the present embodiment is implemented using the following components: a plurality of semiconductor chips; a substrate having a plurality of mounting areas for mounting the aforementioned plurality of semiconductor chips; a winding sheet 10A for sintering bonding described in the present embodiment; and a first pressing component that presses the aforementioned semiconductor chips toward the aforementioned substrate while clamping a portion of the sintering bonding layer 5 of the winding sheet 10A for sintering bonding, thereby bonding the aforementioned plurality of semiconductor chips to the aforementioned plurality of mounting areas.

[0329] In the method for manufacturing a semiconductor device according to the present embodiment, the plurality of semiconductor chips are sequentially pressed by the first pressing member and temporarily fixed to the plurality of mounting regions.

[0330] It should be noted that the following description is based on a case where the substrate is a lead frame substrate, the mounting region is a die pad, and the first pressing member is a clamper.

[0331] In addition, an example in which a part of the sintered bonding layer 5 included in the sintered bonding roll sheet 10A is transferred to each of a plurality of semiconductor chips using the roll-to-roll device 1000 will be described below.

[0332] First, a semiconductor wafer is cut on a dicing tape C to obtain a plurality of semiconductor chips (see Figure 4A ).

[0333] Then, if Figure 4A As shown, one semiconductor chip B1 (hereinafter also referred to as a first semiconductor chip B1 ) among a plurality of semiconductor chips is lifted from the dicing tape C by the gripper A. As shown in FIG.

[0334] It should be noted that the semiconductor chip is generally a flat rectangular shape. More specifically, the semiconductor chip is a flat square shape.

[0335] The thickness of the semiconductor chip is, for example, not less than 10 μm and not more than 500 μm. The thickness of the semiconductor chip is preferably not less than 20 μm and not more than 400 μm.

[0336] In addition, the area of ​​the semiconductor chip in a plan view is, for example, 0.01 mm 2 Above and 1000mm 2 The area of ​​the semiconductor chip when viewed from above is preferably 0.04 mm 2 Above and 500mm 2 the following.

[0337] Furthermore, the plane dimension of the clamper A on the side in contact with the semiconductor chip is a dimension corresponding to the chip size.

[0338] That is, the area S1a of the surface of the clamper A in contact with the semiconductor chip in plan view (hereinafter also referred to as clamper area S1a) is equivalent to the area S2a of the semiconductor chip in plan view (hereinafter also referred to as chip area S2a).

[0339] More specifically, the clamper area S1a is 0.9 times or more and 1.1 times or less of the chip area S2a.

[0340] Next, using the roll-to-roll device 1000 , a part of the sintered bonding layer 5 of the sintered bonding roll sheet 10A is transferred to the first semiconductor chip B1 .

[0341] like Figure 5 As shown, the roll-to-roll device 1000 includes a delivery roll 100 , a transfer base G disposed downstream of the delivery roll 100 , and a pair of first and second take-up rolls 200 a and 200 b disposed downstream of the transfer base G.

[0342] Here, if Figure 1A As shown, the wound sheet 10A for sinter bonding according to the present embodiment includes a first base material 1 , a second base material 2 stacked on the first base material 1 , a sinter bonding layer 5 stacked on the second base material 2 , and a third base material 3 stacked on the sinter bonding layer 5 .

[0343] That is, the wound sheet 10A for sinter bonding according to the present embodiment has a four-layer structure in which the first base material 1 , the second base material 2 , the sinter bonding layer 5 , and the third base material 3 are stacked in this order.

[0344] Then, the first winding roller 200 a winds up the third base material 3 peeled off from one surface of the sintered bonding layer 5 in order to form exposed surfaces on the sintered bonding layer 5 for the plurality of semiconductor chips to contact each other.

[0345] In addition, the second winding roller 200 b winds up the transferred sheet after transferring a part of the sintered bonding layer 5 to each of the plurality of semiconductor chips.

[0346] It should be noted that the sheet body after transfer refers to a sheet stack in which the first base material 1 , the second base material 2 , and the remainder of the sintered bonding layer 5 are stacked in this order.

[0347] In the roll-to-roll device 1000 , in order to convey the sintering-bonding roll sheet 10A delivered from the delivery roll 100 toward the transfer base G, a first conveying roll 101 , a second conveying roll 102 , and a third conveying roll 103 are provided in order from the upstream side to the downstream side between the delivery roll 100 and the transfer base G.

[0348] In addition, the roll-to-roll device 1000 includes a fourth conveying roller 104 between the transfer base G and the second winding roller 200 b for conveying the transferred sheet from the transfer base G toward the second winding roller 200 b .

[0349] Furthermore, in the roll-to-roll device 1000, a fifth conveying roller 105 and a sixth conveying roller 106 are provided in order from the upstream side to the downstream side between the second conveying roller 102 and the first winding roller 200a in order to convey the third substrate 3 by winding with the first winding roller 200a.

[0350] The first to sixth conveying rollers 101 to 106 apply tension to the sheet being conveyed.

[0351] The first and second conveying rollers 101 and 102 convey the strip-shaped sintering-bonding sheet 10B unwound from the sintering-bonding roll sheet 10A, and the third conveying roller 103 conveys the pre-transfer sheet body in which one surface of the sintering-bonding layer 5 is exposed by peeling off the third base material 3 .

[0352] As described above, the fourth conveying roller 104 conveys the transferred sheet, and the fifth conveying roller 105 and the sixth conveying roller 106 convey the third base material 3 .

[0353] When a part of the sintered bonding layer 5 is transferred to each of the plurality of semiconductor chips on the transfer base G, the first to sixth conveying rollers 101 to 106 are stopped.

[0354] That is, on the transfer base G, with the sintered bonding layer 5 left at rest, a portion of the sintered bonding layer 5 is transferred to each of the plurality of semiconductor chips.

[0355] Specifically, a portion of the sintered bonding layer 5 is transferred to the first semiconductor chip B1 as shown in FIG. Fig. 6A As shown, the first semiconductor chip B1 is pressed against the sintered bonding layer 5 by the clamper A while the sintered bonding layer 5 is left stationary. Thus, the first semiconductor chip B1 with the divided sintered bonding layer 5 (hereinafter also referred to as divided sintered bonding layer body 2') can be obtained.

[0356] like Fig. 6A As shown, the transfer of a portion of the sintered bonding layer 5 to the first semiconductor chip B1 is preferably performed with the buffer member CM sandwiched between the first substrate 1 and the transfer base G. That is, the transfer of a portion of the sintered bonding layer 5 to the first semiconductor chip B1 is preferably performed with the buffer member CM, the first substrate 1 and the sintered bonding layer 5 being placed on the transfer base G in sequence.

[0357] By placing the first base material 1 on the buffer member CM in this manner, when the first semiconductor chip B1 or the second semiconductor chip B2 is pressed against the sintered bonding layer 5 using the clamper A, the first base material 1 can be sufficiently suppressed from generating a repulsive force due to the pressing.

[0358] As a result, a part of the sintered bonding layer 5 can be more fully transferred to the first semiconductor chip B1 or the second semiconductor chip B2 .

[0359] As the cushioning member CM, for example, a film made of silicone rubber, fluororubber, fluororesin, or porous polyethylene can be used.

[0360] Examples of the fluororubber include binary fluororubber and ternary fluororubber.

[0361] Examples of the binary fluororubber include copolymers of vinylidene fluoride (VDF) and hexafluoropropylene (HFP), etc. Examples of the ternary fluororubber include copolymers of vinylidene fluoride (VDF), hexafluoropropylene (HFP) and tetrafluoroethylene (TFE), or copolymers of vinylidene fluoride (VDF), perfluoromethyl vinyl ether (PMVE) and tetrafluoroethylene (TFE).

[0362] In addition, examples of the fluororesin include polytetrafluoroethylene (PTFE) and the like.

[0363] The pressure at which the first semiconductor chip B1 is pressed against the sintered bonding layer 5 is preferably 0.01 MPa to 10 MPa, and more preferably 0.1 MPa to 5 MPa.

[0364] The temperature of the holder A or the transfer base G when pressing the first semiconductor chip B1 to the sintered bonding layer 5 is preferably 40° C. or higher and 150° C. or lower, and more preferably 50° C. or higher and 130° C. or lower.

[0365] By setting the temperature of the clamper A or the transfer base G within the above range, a part of the sintered bonding layer 5 can be pressed off, thereby enabling the divided bodies 2 ′ of the sintered bonding layer to be appropriately transferred to the first semiconductor chip B1 .

[0366] Then, if Fig. 7A As shown, the gripper A lifts up the first semiconductor chip B1 of the separated body 2 ′ with the sintered bonding layer.

[0367] Then, if Fig. 8A As shown in FIG. 1 , the lead frame substrate D is placed on the base H. As shown in FIG.

[0368] Next, while holding the clamp A at any temperature within the range of 25°C to 100°C, the clamp A is lowered vertically downward so that the split body 2' of the sintered bonding layer in the first semiconductor chip B1 is brought into contact with the first chip pad E1 of the lead frame substrate D.

[0369] Then, the first semiconductor chip B1 of the divided body 2 ′ with the sintered bonding layer is pressed by the clamper A (pressing).

[0370] Specifically, the first semiconductor chip B1 is pressed by the clamper A, and the divided body 2 ′ of the sintered bonding layer is mounted on the first die pad E1 of the lead frame substrate D.

[0371] Thus, the first semiconductor chip B1 is temporarily fixed to the first die pad E1 (see FIG. 1 ) of the lead frame substrate D via the divided body 2 ′ of the sintered bonding layer. Fig. 8A ).

[0372] When the first semiconductor chip B1 with the divided body 2 ′ having the sintered bonding layer is pressed from the divided body 2 ′ side of the sintered bonding layer toward the first die pad E1 of the lead frame substrate D, the pressure is preferably 0.01 MPa to 50 MPa, more preferably 0.1 MPa to 30 MPa.

[0373] As described above, after the first semiconductor chip B1 is temporarily fixed to the first die pad E1 of the lead frame substrate D, Figure 4B As shown in FIG. 1 , another semiconductor chip B2 (hereinafter also referred to as a second semiconductor chip B2 ) among the plurality of semiconductor chips is lifted up from the dicing tape C by the clamper A. FIG.

[0374] Then, if Figure 6B As shown, the second semiconductor chip B2 is pressed against the sintered bonding layer 5 of the sintered bonding roll sheet 10A (10B) by the clamper A, thereby transferring part of the sintered bonding layer 5 to the second semiconductor chip B2. Thus, the second semiconductor chip B2 with the divided body 2' having the sintered bonding layer can be obtained.

[0375] Then, if Figure 7B As shown, the second semiconductor chip B2 of the divided body 2 ′ with the sintered bonding layer is lifted up by means of the gripper A.

[0376] Next, while maintaining the clamp A at any temperature within the range of 25°C to 150°C, the second semiconductor chip B2 having the split body 2' with the sintered bonding layer is brought into contact with the other chip pad E2 (second chip pad E2) in the lead frame substrate D from the split body 2' side of the sintered bonding layer.

[0377] Then, the second semiconductor chip B2 of the divided body 2 ′ with the sintered bonding layer is pressed by the clamper A (pressing).

[0378] Thus, the second semiconductor chip B2 is temporarily fixed to the second die pad E2 (see FIG. 1 ) of the lead frame substrate D via the divided body 2 ′ of the sintered bonding layer. Figure 8B ).

[0379] The above steps are repeated until the semiconductor chips are temporarily fixed to all the die pads of the lead frame substrate D.

[0380] It should be noted that after the first semiconductor chip B1 is temporarily fixed to the first chip pad E1 of the lead frame substrate D or the second semiconductor chip B2 is temporarily fixed to the second chip pad E2 of the lead frame substrate D, the clamp A is heated to a temperature at which the sinterable particles (sinterable particles contained in the split body 2' of the sintered bonding layer) can be sintered, so that the aforementioned sinterable particles in the split body 2' of the sintered bonding layer can be sintered once with each other.

[0381] That is, when there are semiconductor chips other than the first semiconductor chip B1 and the second semiconductor chip B2 as semiconductor chips temporarily fixed to the chip pads of the lead frame substrate D, the aforementioned single sintering can also be performed on the sinterable particles respectively contained in the divided bodies 2' of the sintered bonding layer used to temporarily fix the other semiconductor chips to the respective chip pads.

[0382] When the sinterable particles contained in the divided bodies 2 ′ of the sintered bonding layer are sinterable particles that can be sintered at a heating temperature of 400° C. or lower, the holder A is preferably heated at a temperature of 200° C. or higher.

[0383] The holder A is heated at 200° C. or higher to more fully sinter the sinterable particles. Therefore, the semiconductor chips can be more firmly mounted on the die pads of the lead frame substrate D while holding the divided bodies 2 ′ of the sintered bonding layer.

[0384] That is, the connection reliability of semiconductor chips such as the first semiconductor chip B1 and the second semiconductor chip B2 to the substrate such as the lead frame substrate D can be improved.

[0385] When the primary sintering is performed, the holder A is preferably heated quickly (in about 5 seconds) to a temperature at which the sinterable particles can be sintered.

[0386] The holder A is preferably heated at 30° C. / sec or more to a temperature at which the sinterable particles can be sintered, and more preferably heated at 45° C. / sec or more.

[0387] It should be noted that the primary sintering can be performed by, in addition to heating the holder A, further heating the base H to a temperature at which the sinterable particles can be sintered or higher.

[0388] Thus, the split body 2' of the sintered bonding layer can be heated from both sides, so that the sinterable particles in the split body 2' of the sintered bonding layer can be more fully sintered. As a result, the semiconductor chips can be more firmly mounted on the chip pads of the lead frame substrate D while the split body 2' of the sintered bonding layer is held.

[0389] That is, the connection reliability of semiconductor chips such as the first semiconductor chip B1 and the second semiconductor chip B2 to the substrate such as the lead frame substrate D can be further improved.

[0390] In addition, the temperature at which the base H is heated is preferably lower than the temperature at which oxidation of the lead frame substrate D is suppressed. For example, when the lead frame substrate D is made of a Cu alloy (Cu-Cr-Zr, Cu-Cr-Sn-Zn, Cu-Ni-Si-Mg, etc.), the temperature at which the base H is heated is preferably lower than 150°C.

[0391] It should be noted that, as described above, when a sintering is performed on the split body 2' of the sintered bonding layer, it is preferred that: after the first sintering, the clamp A is lifted up to separate it from the semiconductor chip with the split body 2' of the sintered bonding layer, thereby lowering the temperature of the clamp A to a temperature at which the sinterable particles are difficult to sinter (for example, 50°C).

[0392] When semiconductor chips are mounted on all the die pads of the lead frame substrate D, by subjecting each of the divided bodies 2 ′ of the sintered bonding layer to the above-mentioned primary sintering, bonding wires can be bonded to necessary locations.

[0393] In the method for manufacturing a semiconductor device according to this embodiment, after the plurality of semiconductor chips are pressed sequentially and temporarily fixed to the plurality of mounting regions, a heating step of heating the substrate on which the plurality of semiconductor chips are mounted at a temperature at which the sinterable particles can be sintered may be performed.

[0394] Furthermore, in the heating step, the heating may be performed by pressing a part or all of the plurality of semiconductor chips toward the substrate.

[0395] Furthermore, in the heating step, the heating may be performed without pressing all of the plurality of semiconductor chips toward the substrate.

[0396] It should be noted that, as described above, when heating (primary heating) is performed for primary sintering of the sinterable particles contained in the divided bodies 2 ′ of the sintered bonding layer, the heating step becomes a secondary heating step.

[0397] More specifically, after all the chip pads of the lead frame substrate D are temporarily fixed with semiconductor chips, Fig.9A As shown, the base H can be heated to a temperature at which the sinterable particles contained in the split body 2' of the sintered bonding layer can be sintered (for example, any temperature in the range of not less than 200°C and not more than 400°C) while a part or all of the semiconductor chips mounted on all the chip pads of the lead frame substrate D are not pressed (a heating process can be performed).

[0398] It should be noted that Fig.9A 2 shows an example in which the semiconductor chips (first semiconductor chip B1 and second semiconductor chip B2) mounted on all the die pads (first die pad E1 and second die pad E2) of the lead frame substrate D are heated in a state where all of them are not pressed.

[0399] By performing such a heating step, the sinterable particles can be sintered together, so that the semiconductor chip can be firmly mounted on the substrate (lead frame substrate D) in a state where the divided body 2 ′ of the sintered bonding layer is sandwiched therebetween.

[0400] That is, the connection reliability between the semiconductor chip and the substrate can be improved.

[0401] Furthermore, the equipment used in the heating step can be made simple equipment without a pressing member for pressing a part or all of the plurality of semiconductor chips.

[0402] It should be noted that, when such a heating step is performed, the bonding wire may be bonded to a necessary position after the heating step.

[0403] In the method for manufacturing a semiconductor device according to this embodiment, in the heating step of heating at a temperature at which the sinterable particles can be sintered, the heating may be performed while a part or all of the plurality of semiconductor chips are pressed toward the substrate.

[0404] Furthermore, in the method for manufacturing a semiconductor device according to the present embodiment, in the heating step, all of the plurality of semiconductor chips may be pressed toward the substrate and heated.

[0405] More specifically, after semiconductor chips are temporarily fixed to all the die pads of the lead frame substrate D, Fig. 9BAs shown in FIG. 1 , a heating and pressing device F is used, which has two flat plates (parallel plates) arranged so as to sandwich a part or all of the semiconductor chips mounted on all the die pads of the lead frame substrate D from the upper and lower directions, and is configured so as to be able to heat. The heating and pressing device F can be used to press (press) a part or all of the semiconductor chips mounted on all the die pads of the lead frame substrate D while heating at a temperature that allows sintering.

[0406] It should be noted that Fig. 9B 2 shows an example in which all the semiconductor chips (first semiconductor chip B1 and second semiconductor chip B2) mounted on all the die pads (first die pad E1 and second die pad E2) of the lead frame substrate D are pressed and heated.

[0407] If this heating process is implemented, some or all of the multiple semiconductor chips can be pressed toward the substrate (lead frame substrate D) and heated, so that some or all of the multiple semiconductor chips can be firmly mounted on the substrate (lead frame substrate D) in a state where the split body 2' of the sintered bonding layer is clamped.

[0408] That is, the connection reliability between the semiconductor chip and the substrate can be improved.

[0409] It should be noted that, when such a heating step is performed, the bonding wire can be bonded to a necessary position after the heating step.

[0410] Various known lead frame substrates can be used as the lead frame substrate D. Examples of the various known lead frame substrates include a lead frame substrate obtained by silver plating a Cu lead frame substrate, or a lead frame substrate obtained by sequentially plating a Cu lead frame substrate with Ni, Pd, and Au (Palladium Pre Plated Lead Frame. Pd-PPF).

[0411] Matters disclosed in this specification include the following. (1)

[0413] A wound sheet for sintering bonding comprises a first substrate and a sintering bonding layer laminated on the first substrate, wherein the wound sheet for sintering bonding is a strip-shaped sheet for sintering bonding wound along a longitudinal direction.

[0414] The sintered bonding layer contains an organic binder and sinterable particles containing a conductive metal, and the sintered bonding layer is directly laminated on the first substrate or indirectly laminated on the first substrate via a second substrate.

[0415] The length L1 of the first substrate is larger than the length L of the sintered bonding layer. S The length direction dimension L2 of the second substrate is larger than that of the second substrate.

[0416] The wound sheet for sinter bonding having the above-described structure can suppress a decrease in yield when manufacturing semiconductor devices. (2)

[0418] The wound sheet for sinter bonding according to (1) above, wherein a third base material is provided on the surface of the sinter bonding layer opposite to the surface opposite to the first base material.

[0419] A dimension L1 of the first substrate in the longitudinal direction is greater than a dimension L3 of the third substrate in the longitudinal direction. (3)

[0421] The wound sheet for sintering bonding according to (1) or (2) above, wherein the sintering bonding layer and the second base material are laminated continuously or intermittently on the first base material along the longitudinal direction. (4)

[0423] The wound sheet for sintering bonding according to any one of (1) to (3) above, wherein the surface area S1 of the first substrate when viewed from above is larger than the surface area S S The surface area S2 when looking down at the second substrate is large. (5)

[0425] The wound sheet for sintering bonding according to any one of (2) to (4) above, wherein a surface area S1 of the first base material when viewed in plan is larger than a surface area S3 of the third base material when viewed in plan. (6)

[0427] The wound sheet for sintering bonding according to any one of (1) to (5), wherein a dimension W1 in the width direction of the first substrate is larger than a dimension W1 in the width direction of the sintering bonding layer. S The width dimension W2 is larger than that of the second substrate. (7)

[0429] The wound sheet for sintering bonding according to any one of (2) to (6) above, wherein a dimension W1 in the width direction of the first base material is larger than a dimension W3 in the width direction of the third base material. (8)

[0431] The wound sheet for sinter bonding according to (2) above, wherein a fourth base material is provided on the surface of the third base material opposite to the surface facing the sinter bonding layer.

[0432] The length L4 of the fourth base material is larger than the length L of the sintered bonding layer. S , the dimension L2 of the length direction of the second substrate and the dimension L3 of the length direction of the third substrate are both large. (9)

[0434] The wound sheet for sinter bonding according to the above (8), wherein the surface area S4 of the fourth base material when viewed from above is larger than the surface area S S , the surface area S2 when looking down on the second substrate and the surface area S3 when looking down on the third substrate are both large. (10)

[0436] The wound sheet for sinter bonding according to (8) or (9), wherein a dimension W4 in the width direction of the fourth base material is larger than a dimension W in the width direction of the sinter bonding layer. S , the dimension W2 of the width direction of the second substrate and the dimension W3 of the width direction of the third substrate are both large. (11)

[0438] The wound sheet for sintering bonding according to any one of (1) to (10), wherein the first base material has a thickness of 30 μm or more and 150 μm or less. (12)

[0440] The wound sheet for sintering bonding according to any one of (1) to (11) above, wherein the first substrate has a contact surface that contacts the sintering bonding layer or the second substrate.

[0441] The Young's modulus at 23° C. obtained by measuring the contact surface using a nanoindentation method is 0.5 GPa or more and 5.0 GPa or less. (13)

[0443] The wound sheet for sintering bonding according to any one of (1) to (12) above, wherein the first base material has a tensile elongation of 4% or more and 350% or less at 23°C. (14)

[0445] The wound sheet for sintering bonding according to any one of (1) to (13) above, wherein the first base material has a porosity of 10% or less.

[0446] It should be noted that the wound sheet for sintering bonding according to the present invention is not limited to the above-mentioned embodiment. The wound sheet for sintering bonding according to the present invention is not limited by the above-mentioned effects. The wound sheet for sintering bonding according to the present invention can be variously modified within the scope of the present invention.

[0447] Example

[0448] Next, the present invention will be described in more detail with reference to Examples and Comparative Examples. The following Examples are used to describe the present invention in more detail, but are not intended to limit the scope of the present invention.

[0449] [Example 1]

[0450] First silver particles (average particle size of 60 nm, manufactured by DOWA ELECTRONICS), second silver particles (average particle size of 1100 nm, manufactured by Mitsui Mining & Smelting Co., Ltd.), polycarbonate resin (trade name "QPAC40", manufactured by Empower Materials), and isobornyl cyclohexanol (trade name "Terusolve MTPH", manufactured by Nippon Terpene Chemical Industries, Ltd.) were dissolved / suspended in methyl ethyl ketone (MEK) at the blending ratio shown in Table 1 below (i.e., the blending ratio calculated in the sintered bonding layer) to prepare a varnish.

[0451] The above components were stirred and mixed for 3 minutes in a stirring mode using a mixer (model: "HM-500", manufactured by KEYENCE Corporation) to thereby dissolve and suspend the components in methyl ethyl ketone.

[0452] The varnish was applied to the release-treated surface of the second substrate (release-treated film, trade name "MRA38", manufactured by Mitsubishi Chemical Corporation) at a thickness of 200 μm to form a coating layer, and then the coating layer was heated at 110° C. for 3 minutes to form a sintered bonding layer on the second substrate. Thus, a release-treated film with a sintered bonding layer was obtained.

[0453] It should be noted that the planar dimensions of the second substrate are 80,000 mm (80 m) in length and 130 mm (13 cm) in width, and the coating layer is formed over the entire area of ​​the release-treated surface of the second substrate.

[0454] That is, the sintered bonding layer and the second base material have the same plane dimensions.

[0455] Next, a third substrate (a release film, trade name "MRA38", manufactured by Mitsubishi Chemical Corporation) is overlapped on the sintered bonding layer of the release film with the sintered bonding layer to obtain a stacked body in which the second substrate, the sintered bonding layer and the third substrate are stacked in sequence.

[0456] It should be noted that the planar dimensions of the third substrate are also the same as the planar dimensions of the second substrate and the sintered bonding layer.

[0457] Next, the laminated body was stacked on a PET substrate (trade name “E-MASK (registered trademark) CP170” manufactured by Nitto Denko Corporation) as a first substrate to obtain a belt-shaped sintering bonding sheet as described in Example 1.

[0458] That is, the sintered bonding sheet described in Example 1 is obtained by laminating four layers in this order: the first base material, the second base material, the sintered bonding layer, and the third base material.

[0459] It should be noted that the planar dimensions of the PET substrate serving as the first substrate are 100,000 mm (100 m) in length and 150 mm (15 cm) in width, which are larger than the planar dimensions of the aforementioned second substrate, the planar dimensions of the aforementioned sintered bonding layer, and the planar dimensions of the aforementioned third substrate.

[0460] Furthermore, the laminated body is laminated on the first base material so that the central portion of the laminated body and the central portion of the first base material overlap in the thickness direction.

[0461] Furthermore, the PET substrate as the first substrate has a pressure-sensitive adhesive layer containing an acrylic resin on one surface, and therefore the laminate is held on the PET substrate as the first substrate via the pressure-sensitive adhesive layer.

[0462] It should be noted that the first silver particles and the second silver particles are classified as sinterable particles, the polycarbonate resin is classified as a first organic binder (thermodegradable polymer binder), and the isobornylcyclohexanol is classified as a second organic binder (low boiling point binder).

[0463] In the following Table 1, the blending amount of the sinterable particles is indicated by the ash value, and the blending amounts of the first silver particles and the second silver particles are indicated by the amounts at the time of charging.

[0464] [Example 2]

[0465] The belt-shaped sintered bonding sheet described in Example 2 was obtained in the same manner as in Example 1 except that the first substrate was changed to a first PE substrate (trade name "E-MASK (registered trademark) R200" manufactured by Nitto Denko Corporation).

[0466] It should be noted that the first PE substrate as the first substrate has an adhesive layer containing an acrylic resin on one surface, and therefore the laminate described in Example 2 is held on the first PE substrate as the first substrate via the adhesive layer.

[0467] [Example 3]

[0468] The belt-shaped sintered bonding sheet described in Example 3 was obtained in the same manner as in Example 1 except that the first substrate was changed to a PI substrate (trade name "TRM-6250L" manufactured by Nitto Denko Corporation).

[0469] It should be noted that the PI substrate as the first substrate has an adhesive layer containing a silicone resin on one surface, and therefore the laminate described in Example 3 is held on the PI substrate as the first substrate via the adhesive layer.

[0470] [Example 4]

[0471] The belt-shaped sintered bonding sheet described in Example 4 was obtained in the same manner as in Example 1 except that the first substrate was replaced with a second PE substrate (trade name "SUNMAP LC-T5320T" manufactured by Nitto Denko Corporation).

[0472] It should be noted that, as described above, SUNMAP LC-T5320T is a porous plastic substrate having a porosity of 30%.

[0473] In addition, the second PE substrate as the first substrate has an adhesive layer containing an acrylic resin and a urethane resin on one surface. Therefore, the laminate described in Example 4 is held on the second PE substrate as the first substrate via the adhesive layer.

[0474] [Example 5]

[0475] The belt-shaped sintered bonding sheet described in Example 5 was obtained in the same manner as in Example 1 except that the first substrate was changed to a 230 μm-thick PTFE substrate (trade name “NIFTRON (registered trademark) 9030UL” manufactured by Nitto Denko Corporation).

[0476] It should be noted that the 230 μm thick PTFE substrate as the first substrate has an adhesive layer containing a silicone resin on one surface, so the laminate described in Example 5 is held on the 230 μm thick PTFE substrate as the first substrate by the adhesive layer.

[0477] [Example 6]

[0478] The belt-shaped sintered bonding sheet described in Example 6 was obtained in the same manner as in Example 1 except that the first substrate was changed to a PTFE substrate having a thickness of 80 μm (trade name “NIFTRON (registered trademark) 9030UL” manufactured by Nitto Denko Corporation).

[0479] It should be noted that the 80 μm thick PTFE substrate as the first substrate has an adhesive layer containing a silicone resin on one surface, so the laminate described in Example 6 is held on the 80 μm thick PTFE substrate as the first substrate via the adhesive layer.

[0480] [Comparative Example 1]

[0481] The belt-shaped sintered bonding sheet described in Comparative Example 1 was obtained in the same manner as in Example 1 except that the first base material was not used.

[0482] That is, the sintered bonding sheet described in Comparative Example 1 is obtained by stacking the aforementioned second substrate (release treatment film. Trade name "MRA38", manufactured by Mitsubishi Chemical Corporation), the aforementioned sintered bonding layer and the aforementioned third substrate (release treatment film. Trade name "MRA38", manufactured by Mitsubishi Chemical Corporation) in three layers in sequence.

[0483] Table 2 below shows the results of measuring the thickness of the first base material, the Young's modulus of the first base material at 23° C., and the tensile elongation of the first base material at 23° C. for the sinter bonding sheet described in each Example.

[0484] The thickness of the first substrate, the Young's modulus of the first substrate at 23° C., and the tensile elongation of the first substrate at 23° C. were measured according to the method described in the first embodiment.

[0485] [Table 1]

[0486]

[0487] <Yield of Sintered Bonding Layer>

[0488] The yield rate of the sintered bonding layer was evaluated for the sintered bonding sheet described in each example.

[0489] Specifically, using Figure 5 The roll-to-roll device 1000 shown in the figure calculates the ratio of the surface area of ​​the sintered bonding layer available on the transfer base G when conveying the wound sheet for sintering bonding obtained by winding the sintering bonding sheet described in each example from the delivery roll 100 to the second winding roll 200b.

[0490] That is, by calculating the surface area (S U ) relative to the total surface area of ​​the sintered bonding layer (S T ) ratio ([S U / S T ]×100) to implement.

[0491] This means that the higher the numerical value of the above ratio is, the more the reduction in yield is suppressed.

[0492] In addition, the above ratio ([S U / S T ]×100) is calculated based on the condition that the distance between the shaft of the delivery roller 100 and one end of the transfer base G facing the shaft (the closest end) in the length direction is set to 2m, and the distance between the shaft of the second winding roller 200b and the other end of the transfer base G facing the shaft (the closest end) in the length direction is set to 2m. In the transfer base G, assuming that the two end sides of the sintering bonding sheet in the width direction are held with a width of 5mm by a clamp, the above ratio ([S U / S T ]×100).

[0493] It should be noted that since the sintered bonding layer cannot ensure sufficient thickness at both ends in the length direction, even if the entire surface area of ​​the sintered bonding layer can be used on the transfer base G, the area of ​​the two end portions where the sufficient thickness cannot be ensured is excluded to calculate the above ratio.

[0494] The results are shown in Table 2 below.

[0495] <Evaluation of transferability>

[0496] Regarding the sintered bonding sheet described in each example, the transferability of the sintered bonding layer to the Si chip was evaluated.

[0497] The transferability of the sintered bonding layer to the Si chip was evaluated using a flip chip bonding apparatus (FC3000W manufactured by Toray Engineering Co., Ltd.).

[0498] The transferability was evaluated according to the following procedure.

[0499] (1) With respect to the sheet for sinter bonding described in each example, the release-treated film as the third base material was peeled off to obtain an adhesive surface.

[0500] (2) A cushioning member (product name "FF10N" manufactured by YAMUCHI CO., LTD.) was placed on the base provided in the flip chip bonding apparatus and brought into contact with the first substrate, and the sinter bonding sheet described in each example was placed on the cushioning member.

[0501] That is, the sheet for sintering bonding described in each example is placed on the cushioning member so that the bonding surface is exposed.

[0502] (3) Using a holder heated at 100°C, a Si chip (5 mm square, 200 μm thick) with one surface plated with silver was pressed against the bonding surface of the sintered bonding layer described in each example under a load of 12.5 N for 1 second. It should be noted that one silver-plated surface of the Si chip was pressed against the bonding surface.

[0503] (4) The holder was lifted at a speed of 0.3 mm / sec to transfer a portion of the sintered bonding layer of the sintered bonding sheet described in each example to one surface of the Si chip. The size of the sintered bonding layer transferred was visually observed and the transferability was evaluated according to the following criteria.

[0504] ○: Within the specified number of times, the sintered bonding layer was transferred to the same size as the aforementioned Si chip.

[0505] Δ: In any of the predetermined times, the sintered bonding layer was not transferred to the same size as the Si chip.

[0506] ×: In the case of any number of the predetermined numbers, the sintered bonding layer was often not transferred to the same size as the Si chip, which was problematic in practical use.

[0507] (5) Carry out the above steps (1) to (4) a prescribed number of times (10 times).

[0508] The evaluation results of transferability are shown in Table 2 below.

[0509] <Evaluation of burr generation>

[0510] The sheets for sintering bonding described in the respective examples were evaluated for the occurrence of burrs.

[0511] The generation of burrs was evaluated by observing the image obtained by photographing the aforementioned Si chip after the transfer sintering bonding layer using a digital microscope (manufactured by Keyence Corporation, trade name "VHX-2000"). The photographing using the digital microscope was implemented from the other side of the aforementioned Si chip (the side not plated with silver). It should be noted that the following conditions were adopted as the photographing conditions of the digital microscope.

[0512] Lens: Z20, set to 100x

[0513] Shutter speed: 1 / 60sec

[0514] Gain: 0db

[0515] Lighting: Turn on the light (about 90%), the base is turned on through the lighting (about 20%)

[0516] Frame rate: 15F / sec

[0517] Incidentally, the occurrence of burrs was determined based on the following criteria.

[0518] ○: The thickness of the sintered bonding layer exposed from the outer peripheral edge of the Si chip is less than 100 μm.

[0519] ×: The sintered bonding layer exposed from the outer peripheral edge of the Si chip is 100 μm or more.

[0520] The evaluation results of burr generation are shown in Table 2 below.

[0521] [Table 2]

[0522] Example 1 Example 2 Example 3 Example 4 First substrate PET substrate The first PE substrate PI substrate Second PE substrate Second substrate First PET release liner First PET release liner First PET release liner First PET release liner The third substrate First PET release liner First PET release liner First PET release liner First PET release liner First substrate thickness [μm] 145 65 31 220 Young's modulus of the first substrate [GPa] 3.4 0.9 3.5 0.3 Tensile elongation of the first substrate [%] 100 350 4 90 Yield of sintered bonding layer [%] More than 99 More than 99 More than 99 More than 99 Transferability ○ ○ △ × Burr Generation ○ ○ ○ ○ Example 5 Example 6 Comparative Example 1 First substrate PTFE substrate PTFE substrate none Second substrate First PET release liner First PET release liner First PET release liner The third substrate First PET release liner First PET release liner First PET release liner First substrate thickness [μm] 230 80 - Young's modulus of the first substrate [GPa] 0.5 0.5 - Tensile elongation of the first substrate [%] 220 180 - Yield of sintered bonding layer [%] More than 99 More than 99 48～82 Transferability × △ ○ Burr Generation × ○ ○

[0523] As can be understood from Table 2, in all the sintered bonding sheets described in the examples, the yield rate of the sintered bonding layer exceeded 99%, and almost all of the sintered bonding layer could be used.

[0524] On the other hand, in the sintered bonding sheet described in Comparative Example 1, the yield rate of the sintered bonding layer was within the range of 48 to 82%, and the sintered bonding layer could not be effectively utilized.

[0525] Therefore, when the sintered bonding sheet described in each example is used as a wound sheet and attached to a roll-to-roll device, a decrease in yield can be suppressed.

[0526] As can be understood from Table 2, the sinter-bonding sheets described in Examples 1 and 2 were excellent in both the evaluation of transferability and the evaluation of burr generation.

Claims

1. A wound sheet for sintering bonding, comprising a first substrate and a sintering bonding layer laminated on the first substrate, wherein the wound sheet for sintering bonding is a strip-shaped sheet for sintering bonding wound along a longitudinal direction, The sintered bonding layer includes an organic binder and sinterable particles containing a conductive metal, and the sintered bonding layer is directly laminated on the first substrate or indirectly laminated on the first substrate via a second substrate. The length L1 of the first substrate is larger than the length L2 of the sintered bonding layer. S The dimension L2 in the longitudinal direction of the second substrate is large.

2. The wound sheet for sinter bonding according to claim 1, wherein A third substrate is provided on the surface of the sintered bonding layer opposite to the surface facing the first substrate, A length L1 of the first substrate in the longitudinal direction is greater than a length L3 of the third substrate in the longitudinal direction.

3. The wound sheet for sintering bonding according to claim 1 or 2, wherein: The sintered bonding layer and the second base material are continuously or intermittently stacked on the first base material along the length direction.

4. The wound sheet for sintering bonding according to claim 1 or 2, wherein: The surface area S1 of the first substrate when viewed from above is larger than the surface area S S The surface area S2 when looking down at the second substrate is large.

5. The wound sheet for sinter bonding according to claim 2, wherein: The surface area S1 of the first substrate when viewed from above is greater than the surface area S3 of the third substrate when viewed from above.

6. The wound sheet for sinter bonding according to claim 1, wherein The width dimension W1 of the first substrate is larger than the width dimension W1 of the sintered bonding layer. S The dimension W2 in the width direction of the second substrate is large.

7. The wound sheet for sinter bonding according to claim 2, wherein: A dimension W1 of the first substrate in the width direction is greater than a dimension W3 of the third substrate in the width direction.

8. The wound sheet for sinter bonding according to claim 2, wherein: A fourth substrate is provided on the surface of the third substrate opposite to the surface facing the sintered bonding layer, The length L4 of the fourth base material is larger than the length L of the sintered bonding layer. S , a dimension L2 of the second substrate in the longitudinal direction and a dimension L3 of the third substrate in the longitudinal direction are both large.

9. The wound sheet for sinter bonding according to claim 8, wherein: The surface area S4 of the fourth substrate when viewed from above is larger than the surface area S S , the surface area S2 when looking down at the second substrate and the surface area S3 when looking down at the third substrate are both large.

10. The wound sheet for sinter bonding according to claim 8 or 9, wherein: The width dimension W4 of the fourth base material is larger than the width dimension W of the sintered bonding layer. S , a dimension W2 of the second substrate in the width direction and a dimension W3 of the third substrate in the width direction are both large.

11. The wound sheet for sintering bonding according to claim 1 or 2, wherein: The first substrate has a thickness of 30 μm or more and 150 μm or less.

12. The wound sheet for sintering bonding according to claim 1 or 2, wherein: The first substrate has a contact surface that contacts the sintered bonding layer or the second substrate, The Young's modulus at 23° C. obtained by measuring the contact surface using a nanoindentation method is 0.5 GPa or more and 5.0 GPa or less.

13. The wound sheet for sinter bonding according to claim 1 or 2, wherein: The first substrate has a tensile elongation of 4% or more and 350% or less at 23°C.

14. The wound sheet for sintering bonding according to claim 1 or 2, wherein: The porosity of the first substrate is 10% or less.

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