Radio frequency front-end module

Abstract

The invention discloses a radio frequency front-end module. The radio frequency front-end module comprises a substrate, a signal filtering module, a signal shunting module, a signal detection module and a first chip arranged on the substrate, the first chip comprises a power amplification module; the signal filtering module is connected to the signal output end of the power amplification module; the signal shunting module comprises a first switch and a shunting unit; the signal detection module is configured to control the state of the first switch based on the signal parameter of the radio frequency signal of the power amplification module. For example, the signal detection module controls the first switch to be closed when the signal parameter is greater than a first specified value. As the signal parameter is greater than the first specified value, the power of the radio frequency signal is too large, and the signal filtering module is possibly damaged. The signal detection module timely controls the first switch to be closed, so that the radio frequency signal is shunted through the signal shunting module, the radio frequency signal input into the signal filtering module does not exceed the bearable maximum power value, and the working safety of the signal filtering module is ensured.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and more specifically, to a radio frequency front-end module. Background Art

[0002] Existing RF front-end modules have been widely used in wireless communications, Internet of Things, smart home and other fields. Among them, the RF power amplifier is the core unit of the RF front-end module, and its performance has a great impact on the signal output indicators of the RF front-end module.

[0003] However, when the RF front-end module is working, the signal power output by the RF power amplifier may exceed the power threshold, causing damage to the hardware modules (for example, duplexers, filters) connected to the output end of the RF power amplifier, thereby affecting the signal output capability of the entire RF front-end module. Summary of the invention

[0004] An embodiment of the present application provides a radio frequency front-end module.

[0005] According to the first aspect of the present application, an embodiment of the present application provides a radio frequency front-end module, which includes a substrate, a signal filtering module, a signal shunt module, a signal detection module, and a first chip arranged on the substrate. Among them, the first chip includes a power amplifier module; the signal filtering module is connected to the signal output end of the power amplifier module; the signal shunt module includes a first switch and a shunt unit; one end formed by the first switch and the shunt unit being connected in series is connected to the common end between the signal output end of the power amplifier module and the signal filtering module, and the other end is grounded; the signal detection module is configured to control the state of the first switch based on the signal parameters of the radio frequency signal of the power amplifier module.

[0006] The present application provides a radio frequency front-end module, which includes a substrate, a signal filtering module, a signal shunting module, a signal detection module and a first chip arranged on the substrate, wherein the first chip includes a power amplifier module. The signal detection module is configured to control the state of the first switch based on the signal parameter of the radio frequency signal of the power amplifier module. Exemplarily, the signal detection module can control the first switch in the signal shunting module to close when the signal parameter is greater than the first specified value. The first specified value can be the maximum power value that the signal filtering module can withstand. If the signal parameter of the radio frequency signal is greater than the first specified value, it means that the radio frequency signal power of the power amplifier module is too large at this time, which may damage the signal filtering module. In this case, the signal detection module promptly controls the closure of the first switch so that the excessive radio frequency signal can be shunted through the signal shunting module, thereby making the radio frequency signal of the input signal filtering module not exceed the maximum power value it can withstand, avoiding the situation where the signal filtering module is damaged when the radio frequency signal power is too large, and ensuring the safety of the signal filtering module.

[0007] In addition, the signal detection module can also control the first switch to disconnect when the signal parameter is less than or equal to the second specified value, thereby preventing the signal diversion module from diverting the RF signal when the RF signal of the power amplification module is at a normal value. This ensures that the signal filtering module can be in a normal working state while the RF front-end module can output the RF signal with maximum power. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0009] Figure 1 It is a structural diagram of the RF front-end module provided in an embodiment of the present application.

[0010] Figure 2 yes Figure 1 Another structural schematic diagram of the RF front-end module is shown.

[0011] Figure 3 yes Figure 2 Schematic diagram of the structure of the signal filtering module and the switch module.

[0012] Figure 4 yes Figure 1 Another structural schematic diagram of the RF front-end module is shown.

[0013] Figure 5 yes Figure 1 Another structural schematic diagram of the RF front-end module is shown.

[0014] Figure 6 yes Figure 1 A structural schematic diagram of the middle diversion unit.

[0015] Figure 7 yes Figure 1 Another structural schematic diagram of the middle diversion unit.

[0016] Figure 8 yes Figure 1 Another structural schematic diagram of the RF front-end module is shown.

[0017] Fig. 9 yes Figure 8 Schematic diagram of the structure of the signal detection unit.

[0018] Fig.10 yes Figure 8 Schematic diagram of the coupling unit.

[0019] Fig.11 yes Figure 8 A structural diagram of the coupling unit and the signal matching module.

[0020] Fig.12 yes Figure 8 Another structural schematic diagram of the coupling unit and the signal matching module.

[0021] Fig.13 yes Figure 8 Another structural schematic diagram of the coupling unit and the signal matching module. DETAILED DESCRIPTION

[0022] In order to enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0023] See also Figure 1, the embodiment of the present application provides a radio frequency front-end module 100, which is a component that integrates two or more discrete devices such as a radio frequency switch, a low noise amplifier, a filter, a duplexer, and a power amplifier into an independent module, thereby improving the integration and hardware performance, and miniaturizing the volume. Specifically, the radio frequency front-end module 100 can be applied to 4G and 5G communication devices such as smart phones, tablet computers, and smart watches. In this embodiment, the radio frequency front-end module 100 may include a substrate 10, a signal filtering module 20, a signal shunt module 30, a signal detection module 40, and a first chip 11 arranged on the substrate 10. Among them, the first chip 11 includes a power amplifier module 50. Among them, the signal filtering module 20 is connected to the signal output terminal 500 of the power amplifier module 50. The signal shunt module 30 includes a first switch 300 and a shunt unit 320, and one end formed by the first switch 300 and the shunt unit 320 connected in series is connected to the common end between the signal output terminal 500 of the power amplifier module 50 and the signal filtering module 20, and the other end is grounded. The signal detection module 40 is configured to control the state of the first switch 300 based on the signal parameters of the radio frequency signal of the power amplification module 50 .

[0024] The signal shunt module 30 is a module for shunting the RF signal of the power amplifier module 50, which may specifically include the current or voltage of the RF signal. The shunt unit 320 may be any combination of at least one of a resistor, a capacitor and an inductor. The shunt unit 320 has a certain impedance value, so that when the signal parameter of the RF signal of the power amplifier module 50 is greater than the first specified value, part of the RF signal can be shunted through the signal shunt module 30, so that the RF signal of the input signal filter module 20 will not exceed the maximum power value it can withstand, thereby avoiding the signal filter module 20 from being damaged when the RF signal power is too large, and ensuring the safety of the signal filter module 20.

[0025] Exemplarily, the signal detection module 40 can control the first switch 300 in the signal shunt module 30 to close when the signal parameter of the RF signal of the power amplification module 50 is greater than the first specified value. The first specified value may be the maximum power value that the signal filtering module 20 can withstand. If the signal parameter of the RF signal is greater than the first specified value, it means that the RF signal power of the power amplification module 50 is too large at this time, which may damage the signal filtering module 20. In this case, the signal detection module 40 promptly controls the first switch 300 to close, so that the excessive RF signal can be shunted through the signal shunt module 30, thereby making the RF signal input to the signal filtering module 20 not exceed the maximum power value it can withstand, thereby avoiding the situation where the signal filtering module 20 is damaged when the RF signal power is too large, and ensuring the safety of the signal filtering module 20.

[0026] In addition, the signal detection module 40 can also control the first switch 300 to disconnect when the signal parameter is less than or equal to the second specified value, thereby avoiding the signal diversion module 30 from diverting the RF signal when the RF signal of the power amplification module 50 is at a normal value. This ensures that the signal filtering module 20 can be in a normal working state while the RF front-end module can output the RF signal with maximum power.

[0027] It should be noted here that the "RF signal of the power amplifier module 50" can be the input signal of the power amplifier module 50, or the output signal of the power amplifier module 50. Since the amplification parameter of the power amplifier module 50 is a fixed value, when the signal parameter of the input signal of the power amplifier module 50 is known, the signal parameter of the output signal of the power amplifier module 50 can be calculated. By way of example, taking the amplification parameter of the power amplifier module 50 as the voltage amplification factor and the signal parameter as the voltage as an example, when the voltage amplification factor is 10 and the voltage of the input signal is 1V, it can be determined that the voltage of the output signal is 10V. In some other possible embodiments, the amplification parameter of the power amplifier module 50 can also be the current amplification factor, the power amplification factor, the voltage gain, the current gain, etc., which will not be described in detail in this embodiment.

[0028] The specific implementation of each module in the RF front-end module 100 is introduced below.

[0029] The substrate 10 is generally in the shape of a rectangular plate, and is used to fix and support the components (e.g., the signal filter module 20, the signal shunt module 30, the signal detection module 40, the first chip 11, etc.) in the RF front-end module 100. Specifically, the substrate 10 may be a copper-clad laminate, and a circuit may be printed on the surface of the substrate 10 by performing hole processing, chemical copper plating, electroplating, etching, etc. on the copper-clad laminate.

[0030] The power amplifier module 50 in this embodiment is arranged in the first chip 11, and the first chip 11 can be attached to the surface of the substrate 10, or welded to the surface of the substrate 10. The first chip 11 can be a heterojunction bipolar transistor chip (Heterojunction Bipolar Transistor, HBT chip), or a silicon on insulator chip (Silicon On Insulator, SOI chip), or a complementary metal oxide semiconductor chip (Complementary Metal Oxide Semiconductor, CMOS chip), which is not specifically limited in this embodiment.

[0031] It should be noted that this embodiment does not limit the specific configuration of the signal shunting module 30 and the signal detection module 40. For example, the signal shunting module 30 and the signal detection module 40 can be directly set on the substrate 10, or integrated into the same chip, or integrated into different chips respectively, and the R&D personnel can determine it according to the actual design requirements of the RF front-end module 100.

[0032] In some possible embodiments, the RF front-end module 100 may further include a second chip 12 disposed on the substrate 10. The second chip 12 may be attached to the surface of the substrate 10, or welded to the surface of the substrate 10. The signal shunt module 30 and the signal detection module 40 in this embodiment may be integrated in the second chip 12, thereby improving the overall integration of the RF front-end module 100, which is beneficial to the miniaturization design of the RF front-end module 100. Specifically, the second chip 12 may be a silicon on insulator chip (ie, SOI chip), or a complementary metal oxide semiconductor chip (ie, CMOS chip), which is not specifically limited in this embodiment. In some other possible embodiments, the signal shunt module 30 may be disposed on the substrate 10, and the signal detection module 40 may be integrated in the second chip 12, so that the RF front-end module 100 is more flexible in layout.

[0033] In some other possible embodiments, see Figure 2 , the RF front-end module 100 may further include a third chip 13 and a fourth chip 14 arranged on the substrate 10. Among them, the third chip 13 and the fourth chip 14 may be respectively attached to the surface of the substrate 10, or welded to the surface of the substrate 10. The signal shunt module 30 in this embodiment may be integrated in the third chip 13, and the signal detection module 40 may be integrated in the fourth chip 14. In this embodiment, by respectively encapsulating the power amplification module 50, the signal shunt module 30 and the signal detection module 40 in different chips, the signal interference between the modules can be reduced, thereby ensuring the anti-interference capability of the RF front-end module 100. Specifically, the third chip 13 may be a silicon on insulator chip (ie, an SOI chip), and the fourth chip 14 may be a complementary metal oxide semiconductor chip (ie, a CMOS chip).

[0034] The power amplifier module 50 is used to amplify the power of the radio frequency signal. In some possible embodiments, the power amplifier module 50 may include a single transistor, for example, a bipolar junction transistor (Bipolar Junction Transistor, BJT tube), a metal oxide semiconductor field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET tube), a heterojunction bipolar transistor (Heterojunction Bipolar Transistor, HBT tube), etc. Here, the transistor is an HBT tube as an example for explanation, wherein the base of the HBT tube is used to input the radio frequency signal, the collector (that is, the signal output end 500 of the power amplifier module 50) is used to output the radio frequency signal, and the emitter is grounded. In other possible embodiments, the power amplifier module 50 may also be a power amplifier circuit composed of multiple transistors, for example, a differential amplifier circuit, a push-pull amplifier circuit, etc. This embodiment does not limit the specific implementation method of the power amplifier module 50.

[0035] It should be noted here that the RF signal input to the power amplifier module 50 can be a RF signal of a different frequency band. For example, the RF signal can be a signal in the N77 band, a signal in the N78 band, or a signal in the N79 band. This embodiment does not specifically limit this.

[0036] The signal filtering module 20 is connected to the signal output terminal 500 of the power amplifier module 50, and is used to filter the RF signal output by the power amplifier module 50 to reduce noise interference in the RF signal. In this embodiment, the RF front-end module 100 may also include a switch module 60, which is connected between the signal output terminal 500 of the power amplifier module 50 and the signal filtering module 20, and is used to control whether the RF signal output by the power amplifier module 50 is input to the signal filtering module 20.

[0037] In some possible embodiments, the signal filtering module 20 may include a plurality of filtering units 200, and different filtering units 200 are configured to filter radio frequency signals of different frequency bands. Figure 3In the illustrated embodiment, the number of the filter units 200 is three, and the three filter units 200 may be a first filter unit 210, a second filter unit 220, and a third filter unit 230. Exemplarily, the first filter unit 210 is configured to filter the RF signal in the N77 frequency band, the second filter unit 220 is configured to filter the RF signal in the N78 frequency band, and the third filter unit 230 is configured to filter the RF signal in the N79 frequency band. Therefore, by setting a plurality of filter units 200, this embodiment can achieve filtering processing of RF signals of different frequencies, thereby enriching the application scenarios of the RF front-end module 100. Specifically, the filter unit 200 may be a duplexer or a filter.

[0038] The switch module 60 may include a plurality of third switches 600 corresponding to the plurality of filter units 200. The first ends 610 of the plurality of third switches 600 are connected to form a common node 630 connected to the signal output end 500 of the power amplifier module 50. The second ends 620 of the third switches 600 are connected to the corresponding filter units 200. Therefore, when a radio frequency signal of a specified frequency is output from the power amplifier module 50, the third switch 600 in the branch where the filter unit 200 corresponding to the specified frequency is located may be closed, and the other third switches 600 may be opened. Figure 3 Taking the embodiment shown as an example, when the frequency of the RF signal is in the N78 frequency band, the third switch 600 of the branch where the second filter unit 220 is located can be closed, and the third switch 600 of the branch where the first filter unit 210 and the third filter unit 230 are located can be opened. Specifically, the third switch 600 can be a transistor switch or a relay switch. In some possible embodiments, the switch module 60 can also be a single-pole multi-throw switch, and this embodiment does not limit the implementation method of the switch module 60.

[0039] In some possible embodiments, see Figure 4 , the RF front-end module 100 may further include a fifth chip 15 disposed on the substrate 10. Among them, the fifth chip 15 may be attached to the surface of the substrate 10, or welded to the surface of the substrate 10. The signal shunt module 30, the signal detection module 40 and the switch module 60 in this embodiment may all be integrated in the fifth chip 15, thereby improving the overall integration of the RF front-end module 100, which is beneficial to the miniaturization design of the RF front-end module 100. In this embodiment, the fifth chip 15 may be a silicon on insulator chip (ie, SOI chip).

[0040] In some other possible embodiments, see Figure 5, the RF front-end module 100 may also include a sixth chip 16 and a seventh chip 17 arranged on the substrate 10. Among them, the sixth chip 16 and the seventh chip 17 may be respectively attached to the surface of the substrate 10, or welded to the surface of the substrate 10. In this embodiment, the signal shunt module 30 and the switch module 60 may be integrated in the sixth chip 16, and the signal detection module 40 may be integrated in the seventh chip 17. In this embodiment, by separately encapsulating the signal detection module 40 in a chip, the signal interference caused by other modules to the signal detection module 40 can be reduced, thereby ensuring the normal operation of the signal detection module 40. In this embodiment, the sixth chip 16 may be a silicon on insulator chip (ie, an SOI chip), and the seventh chip 17 may be a complementary metal oxide semiconductor chip (ie, a CMOS chip).

[0041] In some other possible embodiments, the RF front-end module 100 may further include an eighth chip (not shown) disposed on the substrate 10. The eighth chip may be respectively attached to the surface of the substrate 10, or welded to the surface of the substrate 10. The first switch 300 and the switch module 60 in the signal shunt module 30 in this embodiment may be integrated in the eighth chip, and the shunt unit 320 in the signal shunt module 30 may be disposed on the substrate 10. For example, the inductor, capacitor, resistor and other components in the shunt unit 320 may be surface mounted devices (SMD) attached to the substrate 10, so that the signal shunt module 30 and the switch module 60 are more flexible in layout.

[0042] See also Figure 2 and Figure 3 The signal shunt module 30 may include a first switch 300 and a shunt unit 320. One end formed by the first switch 300 and the shunt unit 320 being connected in series is connected to the common end between the signal output end 500 of the power amplification module 50 and the signal filtering module 20, and the other end is grounded. Therefore, when the first switch 300 is in a closed state, the RF signal output by the power amplification module 50 can be shunted to the ground end through the signal shunt module 30. Specifically, the first switch 300 may be a transistor switch or a relay switch.

[0043] The shunt unit 320 may be a single resistor or a first resistor subunit 3200 composed of multiple resistors. The first resistor subunit 3200 may include M first resistors 3201 and M second switches 3202 corresponding to the M first resistors 3201, where M is an integer greater than 1. Specifically, the resistance values ​​of the M first resistors 3201 may be the same or different. The second switch 3202 may be a transistor switch or a relay switch.

[0044] In some possible embodiments, a first end 3203 formed by connecting the M first resistors 3201 in series is connected to the first switch 300, and a second end 3204 formed by connecting the M first resistors 3201 in series is grounded. Each second switch 3202 is connected in parallel to the corresponding first resistor 3201. Figure 6 , the number of the first resistor 3201 and the second switch 3202 is three.

[0045] In some other possible embodiments, a first end 3205 formed by connecting the M first resistors 3201 in parallel is connected to the first switch 300, and a second end 3206 formed by connecting the M first resistors 3201 in parallel is grounded. Each second switch 3202 is connected in series in the branch where the corresponding first resistor 3201 is located. Figure 7 , the number of the first resistor 3201 and the second switch 3202 is three.

[0046] Therefore, the RF front-end module 100 can adjust the number of resistors connected in series or in parallel in the shunt unit 320 by switching the switch state of the second switch 3202, thereby adjusting the equivalent resistance of the shunt unit 320, and thereby adjusting the signal power that can be shunted by the signal shunt module 30, thereby ensuring that the RF signal of the input signal filter module 20 does not exceed the maximum power value it can withstand, and the RF front-end module 100 can also output the RF signal with the maximum power. Specifically, the specific control process of the multiple second switches 3202 is described in the following embodiments.

[0047] In this example, please refer again to Figure 5 , the shunt unit 320 can also include a second resistor subunit 3210 and a capacitor subunit 3215, wherein the second resistor subunit 3210 and the capacitor subunit 3215 are connected in parallel. The second resistor subunit 3210 may include a plurality of resistors. Specifically, the circuit structure of the second resistor subunit 3210 may refer to the relevant introduction of the first resistor subunit 3200 in the above embodiment, which will not be repeated here. The capacitor subunit 3215 and the second resistor subunit 3210 are connected in parallel, which is used to adjust the impedance balance of the shunt unit 320. Specifically, the capacitor subunit 3215 may include one or more capacitors, and the R&D personnel may adjust the equivalent capacitance value of the capacitor subunit 3215 according to the specific impedance value of the shunt unit 320, which is not specifically limited here.

[0048] In this embodiment, the shunt unit 320 may also be a resonant circuit composed of a capacitor and an inductor. Figure 2, the shunt unit 320 may include a second capacitor 3220 and a first inductor 3230, wherein the second capacitor 3220 and the first inductor 3230 are connected in parallel. When the second capacitor 3220 and the first inductor 3230 form a parallel resonance, the impedance equivalent to the second capacitor 3220 and the first inductor 3230 is resistive, that is, the second capacitor 3220 and the first inductor 3230 can be equivalent to a resistor. Specifically, the specific parameters of the second capacitor 3220 and the first inductor 3230 can be determined according to the resistance value that the shunt unit 320 needs to be equivalent to, and are not specifically limited here.

[0049] In some possible embodiments, the RF front-end module 100 may include a switch module 60, and one end of the signal shunt module 30 may be connected to the common end between the third switch 600 module and the signal filter module 20, and the other end may be grounded. Alternatively, one end of the signal shunt module 30 may be connected to the common end between the third switch 600 module and the signal output end 500 of the power amplifier module 50, and the other end may be grounded, so that the connection position of the signal shunt module 30 in the RF front-end module 100 is more flexible.

[0050] In some possible embodiments, the switch module 60 may include a plurality of third switches 600, and one end of the signal shunt module 30 may be connected to a common end between the second end 620 of at least one third switch 600 and the filter unit 200 corresponding to the third switch 600, and the other end may be grounded. Alternatively, one end of the signal shunt module 30 may be connected to a common end between the first end 610 of at least one third switch 600 and a common node 630, and the other end may be grounded, so that the connection position of the signal shunt module 30 in the RF front-end module 100 is more flexible.

[0051] It should be noted here that, since multiple filter units 200 can be configured to filter RF signals of different frequency bands, the maximum power value that each filter unit 200 can withstand may be different. In some possible embodiments, the R&D personnel can determine the filter unit 200 that is most likely to be damaged due to excessive power among the multiple filter units 200 based on the actual working conditions of each filter unit 200, and then connect the signal shunting module 30 to the branch where the third switch 600 corresponding to the filter unit 200 is located.

[0052] In some other possible embodiments, there may be multiple signal shunt modules 30 , and the multiple signal shunt modules 30 may be arranged one-to-one in the branches where the multiple third switches 600 are located, thereby ensuring the safety of each filter unit 200 during operation.

[0053] The signal detection module 40 is configured to control the state of the first switch 300 based on the signal parameters of the radio frequency signal of the power amplification module 50. Figure 1 The signal detection module 40 can be connected between the signal output terminal 500 of the power amplifier module 50 and the first switch 300, and is used to obtain the RF signal output by the power amplifier module 50, and determine whether the RF signal has excessive power based on the signal parameters of the RF signal.

[0054] In some other possible embodiments, the signal detection module 40 may also be connected between the signal input end of the power amplifier module 50 and the first switch 300, and is used to obtain the radio frequency signal input by the power amplifier module 50. Since there is a linear mapping relationship between the radio frequency signal input by the power amplifier module 50 and the radio frequency signal output by the power amplifier module 50, the signal parameters of the radio frequency signal input by the power amplifier module 50 may also be used to determine whether the radio frequency signal has excessive power.

[0055] Specifically, the signal detection module 40 is configured to control the first switch 300 to close when the signal parameter of the RF signal is greater than the first specified value. When the signal parameter is less than or equal to the second specified value, the first switch 300 is controlled to be disconnected. Among them, the signal parameter can be a parameter such as voltage, current, power, etc., and the first specified value can be the maximum power value that the signal filter module can withstand. Specifically, the first specified value can be a default value in the RF front-end module 100, or it can be adjusted by the R&D personnel based on the actual working conditions of the RF front-end module 100. If the signal parameter of the RF signal is greater than the first specified value, it means that the RF signal power of the power amplifier module 50 is too large at this time, which may damage the signal filter module 20. In this case, the signal detection module 40 promptly controls the first switch 300 to close, so that the excessive RF signal can be shunted through the signal shunting module 30, so that the RF signal input to the signal filter module 20 will not exceed the maximum power value it can withstand, avoiding the situation where the signal filter module 20 is damaged when the RF signal power is too large, and ensuring the safety of the signal filter module 20.

[0056] In addition, the signal detection module 40 can also control the first switch 300 to disconnect when the signal parameter is less than or equal to the second specified value, thereby avoiding the signal diversion module 30 from diverting the RF signal when the RF signal of the power amplification module 50 is at a normal value. This ensures that the signal filtering module 20 can be in a normal working state while the RF front-end module can output the RF signal with maximum power.

[0057] It should be noted here that the first specified value in this embodiment can be greater than or equal to the second specified value. Wherein, under normal circumstances, the first switch 300 is in an open state. When the RF signal power of the power amplifier module 50 is too large, that is, when the signal parameter of the RF signal is greater than the first specified value, the signal detection module 40 will control the first switch 300 to close. At this time, the shunting effect of the signal shunting module 30 will cause the power value of the RF signal to continue to decrease. When the power value drops to less than the first specified value and greater than or equal to the second specified value, the first switch 300 will still be in a closed state until the power value is less than the second specified value, and the signal detection module 40 controls the first switch 300 to open. Therefore, the first switch 300 in this embodiment has a certain power interval between opening and closing, thereby avoiding the situation where the first switch 300 is disconnected once the power value is less than the first specified value, so that the first switch 300 will not switch back and forth between the open and closed states, ensuring the service life of the first switch 300 and the working stability of the RF front-end module 100. Specifically, the first specified value and the second specified value can be set by R&D personnel based on the actual use of the power amplification module 50, and this embodiment does not specifically limit this.

[0058] See also Figure 8 The signal detection module 40 may include a signal detection unit 410 and a signal comparison unit 430. The input end of the signal detection unit 410 is connected to the signal output end 500 of the power amplification module 50, and the output end of the signal detection unit 410 is connected to the signal comparison unit 430. The signal detection unit 410 is used to convert the RF signal output by the power amplification module 50 into a DC signal.

[0059] See also Fig. 9 The signal detection unit 410 may include a diode 4100, a second resistor 4110 and a first capacitor 4120. The anode 4101 of the diode 4100 is connected to the signal output terminal 500 of the power amplifier module 50, and the cathode 4103 of the diode 4100 is connected to the first terminal 4112 of the second resistor 4110. The diode 4100 is used to perform a detection operation on the RF signal output from the signal output terminal 500, that is, to separate the DC signal from the high-frequency RF signal.

[0060] The first end 4112 of the second resistor 4110 is also connected to the signal comparison unit 430, and the second end 4114 of the second resistor 4110 is grounded. Therefore, the signal input by the signal comparison unit 430 is the DC voltage across the second resistor 4110 (that is, the DC voltage corresponding to the DC signal). One end of the first capacitor 4120 is connected to the first end 4112 of the second resistor 4110, and the other end is grounded. The first capacitor 4120 can be used to further filter out the high-frequency components in the radio frequency signal so that the DC voltage input by the signal comparison unit 430 can be more stable. Specifically, the specific parameters of the second resistor 4110 and the first capacitor 4120 can be adjusted by the R&D personnel based on the actual working conditions of the signal detection unit 410, and are not specifically limited here.

[0061] The signal comparison unit 430 is connected between the signal detection unit 410 and the first switch 300, and the signal comparison unit 430 is configured to control the state of the first switch 300 based on the signal parameters of the DC signal. In some possible embodiments, the signal comparison unit 430 may be a voltage comparator 4300, and the voltage comparator 4300 is used to compare the magnitude relationship of the DC voltage. In some other possible embodiments, the signal comparison unit 430 may also be a current comparator, and the current comparator is used to compare the magnitude relationship of the DC current. The following is an example in which the signal comparison unit 430 is a voltage comparator 4300.

[0062] Please refer again Figure 8 , a first input terminal 4310 of the voltage comparator 4300 is connected to the signal detection unit 410, a second input terminal 4320 of the voltage comparator 4300 is used to input a specified voltage value, and an output terminal 4330 of the voltage comparator 4300 is connected to the first switch 300. The voltage comparator 4300 may be a single-limit comparator, which may be implemented by an integrated operational amplifier circuit, and the specific implementation method of the voltage comparator 4300 is not specifically limited in this embodiment.

[0063] The working process of the voltage comparator 4300 is explained here.

[0064] In this embodiment, the signal parameter of the DC signal includes a DC voltage corresponding to the DC signal, the specified value includes a voltage specified value, and the voltage comparator 4300 is configured to: when the DC voltage is greater than the voltage specified value, send a first level signal to the first switch 300 to indicate that the first switch 300 is closed; when the DC voltage is less than or equal to the voltage specified value, send a second level signal to the first switch 300 to indicate that the first switch 300 is disconnected, and the second level signal is different from the first level signal. In some possible embodiments, here, the first switch 300 is taken as a BJT tube as an example, the voltage corresponding to the first level signal can be the on-voltage of the BJT tube, and the voltage corresponding to the second level signal can be the off-voltage of the BJT tube. Specifically, the magnitude of the first level signal and the second level signal can be determined according to the specific implementation method of the first switch 300, and no specific limitation is made here.

[0065] In this embodiment, by judging the magnitude relationship between the DC voltage and the specified voltage value, it is determined whether the RF signal of the power amplifier module 50 has excessive power, and when the DC voltage is greater than or equal to the specified voltage value, the first switch 300 is promptly controlled to close, so that the excessive RF signal can be shunted through the signal shunt module 30, so that the RF signal input to the signal filter module 20 does not exceed the maximum power value it can withstand, thereby avoiding damage to the signal filter module 20 when the RF signal power is too large, thereby ensuring the safety of the signal filter module 20.

[0066] In some possible embodiments, the signal detection module 40 may further include a driving unit (not shown in the figure), which is connected between the signal comparison unit 430 and the first switch 300. The driving unit may be used to adjust the signal size output by the signal comparison unit 430 so that the signal comparison unit 430 can smoothly control the first switch 300.

[0067] Please refer again Figure 8 The signal detection module 40 may further include a coupling unit 450, which is connected between the signal output terminal 500 of the power amplification module 50 and the input terminal of the signal detection unit 410. The coupling unit 450 is used to improve the transmission efficiency of the radio frequency signal output from the signal output terminal 500 to the signal detection unit 410, so that part of the radio frequency signal output from the signal output terminal 500 can smoothly enter the input terminal of the signal detection unit 410.

[0068] It should be noted here that, when the signal detection module 40 includes a coupling unit 450, one end of the signal shunt module 30 can be connected to the common end between the coupling unit 450 and the signal filtering module 20, and the other end is grounded. Alternatively, one end of the signal shunt module 30 can be connected to the common end between the coupling unit 450 and the signal output end 500 of the power amplification module 50, and the other end is grounded, so that the connection position of the signal shunt module 30 in the RF front-end module 100 is more flexible.

[0069] See also Fig.10 , the signal output end 500 of the power amplifier module 50 and the signal filtering module 20 are connected via the first wiring 21. The coupling unit 450 may include a second wiring 4500 and a third resistor 4510, wherein the second wiring 4500 and the first wiring 21 are coupled and connected, one end of the second wiring 4500 is connected to the input end 412 of the signal detection unit 410, the other end of the second wiring 4500 is connected to one end of the third resistor 4510, and the other end of the third resistor 4510 is grounded. Therefore, the coupling unit 450 in this embodiment only needs to add a coupling line (that is, the second wiring 4500) to couple and connect with the first wiring 21, which reduces the components of the RF front-end module 100 and is conducive to the miniaturization design of the RF front-end module 100. Among them, "A and B coupling connection" refers to a connection method that can realize the energy transmission (or conversion) of the circuit where A is located to the circuit where B is located.

[0070] In this embodiment, the RF front-end module 100 may further include a signal matching module 70, which is connected between the signal output terminal 500 of the power amplification module 50 and the signal filtering module 20, and the signal matching module 70 may improve the transmission power of the RF signal. The signal matching module 70 may be an LC matching circuit composed of an inductor and a capacitor, which may include at least one matching inductor 700 and at least one matching capacitor 720.

[0071] The coupling unit 450 includes a third wiring 4520 and a third resistor 4530, wherein the third wiring 4520 is coupled to any matching inductor 700 in the signal matching module 70, one end of the third wiring 4520 is connected to the input end of the signal detection unit 410, the other end of the third wiring 4520 is connected to one end of the third resistor 4530, and the other end of the third resistor 4530 is grounded. Therefore, the coupling unit 450 in this embodiment only needs to add a coupling line (that is, the third wiring 4520) to couple with the matching inductor 700 in the signal matching module 70, which reduces the components of the RF front-end module 100 and is conducive to the miniaturization design of the RF front-end module 100.

[0072] In some possible embodiments, the signal matching module 70 and the switch module 60 may be connected via a wire (not shown in the figure), and the third trace 4520 in the coupling unit 450 may also be coupled to the above-mentioned wire, so that the connection position of the coupling unit 450 in the RF front-end module 100 is more flexible.

[0073] See also Fig.11 , the signal matching module 70 may include a first matching inductor 7010, a second matching inductor 7020, a third matching inductor 7030, a first matching capacitor 7210 and a second matching capacitor 7220. Among them, one end of the first matching inductor 7010 is connected to the signal output terminal 500 of the power amplifier module 50, and the other end is connected to one end of the first matching capacitor 7210, and the other end of the first matching capacitor 7210 is connected to the signal filtering module 20. One end of the second matching inductor 7020 is connected to the signal output terminal 500 of the power amplifier module 50, and the other end is connected to the power supply terminal VCC. One end of the second matching capacitor 7220 is connected to the common end of the first matching inductor 7010 and the first matching capacitor 7210, and the other end is grounded. One end of the third matching inductor 7030 is connected to the common end of the first matching capacitor 7210 and the signal filtering module 20, and the other end is grounded. The third routing 4520 is coupled to the first matching inductor 7010. Therefore, in this embodiment, the signal matching module 70 is an LCCL type matching circuit. Specifically, the specific parameters of the first matching inductor 7010, the second matching inductor 7020, the third matching inductor 7030, the first matching capacitor 7210 and the second matching capacitor 7220 can be determined by R&D personnel according to the actual working conditions of the RF front-end module 100, and no specific restrictions are made here.

[0074] In some other possible embodiments, the third trace 4520 may also be coupled and connected to the second matching inductor 7020. Alternatively, the third trace 4520 may also be coupled and connected to the third matching inductor 7030. This embodiment does not specifically limit the connection position of the third trace 4520, and the R&D personnel may flexibly adjust the position of the third trace 4520 according to the actual layout circuit of the RF front-end module 100.

[0075] See also Fig.12, the signal matching module 70 may include a fourth matching inductor 7040, a fifth matching inductor 7050, a sixth matching inductor 7060, a third matching capacitor 7230 and a fourth matching capacitor 7240. Among them, one end of the fourth matching inductor 7040 is connected to the signal output terminal 500 of the power amplifier module 50, and the other end is connected to one end of the fifth matching inductor 7050, and the other end of the fifth matching inductor 7050 is connected to the signal filtering module 20. One end of the sixth matching inductor 7060 is connected to the signal output terminal 500 of the power amplifier module 50, and the other end is connected to the power supply terminal VCC. One end of the third matching capacitor 7230 is connected to the common end of the fourth matching inductor 7040 and the fifth matching inductor 7050, and the other end is grounded. One end of the fourth matching capacitor 7240 is connected to the common end of the fifth matching inductor 7050 and the signal filtering module 20, and the other end is grounded. The third routing 4520 is coupled to the fourth matching inductor 7040. Therefore, in this embodiment, the signal matching module 70 is an LCLC type matching circuit. Specifically, the specific parameters of the fourth matching inductor 7040, the fifth matching inductor 7050, the sixth matching inductor 7060, the third matching capacitor 7230 and the fourth matching capacitor 7240 can be determined by R&D personnel according to the actual working conditions of the RF front-end module 100, and no specific restrictions are made here.

[0076] In some other possible embodiments, the third line 4520 may also be coupled and connected to the fifth matching inductor 7050. Alternatively, the third line 4520 may also be coupled and connected to the sixth matching inductor 7060. This embodiment does not specifically limit the connection position of the third line 4520, and the R&D personnel may flexibly adjust the position of the third line 4520 according to the actual layout circuit of the RF front-end module 100.

[0077] It should be noted here that Fig.12 In the illustrated embodiment, the third wiring 4520 and the fifth matching inductor 7050 are preferably coupled and connected. On the one hand, from the perspective of circuit layout, when the coupling unit 450 and the subsequent circuit (that is, the circuit close to the signal filtering module 20) are coupled, the circuit layout can be made more compact and easier to layout. On the other hand, the impedance value at both ends of the fifth matching inductor 7050 is greater than the inductance value of the fifth matching inductor 7050 itself. At this time, the voltage at the fifth matching inductor 7050 is a large voltage, and the current at the fifth matching inductor 7050 is a small current, so that the fifth matching inductor 7050 is easier to couple with the third wiring 4520, thereby improving the coupling degree between the third wiring 4520 and the fifth matching inductor 7050.

[0078] See also Fig.13, the signal matching module 70 may include a seventh matching inductor 7070, an eighth matching inductor 7080, a ninth matching inductor 7090, a fifth matching capacitor 7250 and a sixth matching capacitor 7260. Among them, one end of the fifth matching capacitor 7250 is connected to the signal output terminal 500 of the power amplifier module 50, and the other end is connected to one end of the seventh matching inductor 7070, and the other end of the seventh matching inductor 7070 is connected to the signal filtering module 20. One end of the eighth matching inductor 7080 is connected to the signal output terminal 500 of the power amplifier module 50, and the other end is connected to the power supply terminal VCC. One end of the ninth matching inductor 7090 is connected to the common end of the fifth matching capacitor 7250 and the seventh matching inductor 7070, and the other end is grounded. One end of the sixth matching capacitor 7260 is connected to the common end of the seventh matching inductor 7070 and the signal filtering module 20, and the other end is grounded. The third routing 4520 is coupled to the seventh matching inductor 7070. Therefore, in this embodiment, the signal matching module 70 is a CLLC type matching circuit. Specifically, the specific parameters of the seventh matching inductor 7070, the eighth matching inductor 7080, the ninth matching inductor 7090, the fifth matching capacitor 7250 and the sixth matching capacitor 7260 can be determined by R&D personnel according to the actual working conditions of the RF front-end module 100, and no specific restrictions are made here.

[0079] In some other possible embodiments, the third line 4520 may also be coupled and connected to the eighth matching inductor 7080. Alternatively, the third line 4520 may also be coupled and connected to the ninth matching inductor 7090. This embodiment does not specifically limit the connection position of the third line 4520, and the R&D personnel may flexibly adjust the position of the third line 4520 according to the actual layout circuit of the RF front-end module 100.

[0080] Please refer again Figure 8 , the RF front-end module 100 may also include a control module 80, and the control module 80 is connected to the second input terminal 4320 of the voltage comparator 4300. The control module 80 is configured to determine the voltage specified value based on the frequency band information of the RF signal input to the RF front-end module 100 and the preset first mapping relationship. The voltage comparator 4300 is controlled to work based on the voltage specified value. Among them, the first mapping relationship represents the correspondence between different frequency band information and different voltage specified values. Because the RF front-end module 100 transmits signals of different frequency bands, there may be a gap in the maximum signal power that the signal filtering module 20 can withstand. Therefore, the control module 80 in this embodiment can flexibly adjust the voltage comparison value according to the frequency band where the frequency band information is located, so that the signal detection module 40 can accurately determine whether the signal power is too large. Specifically, the control module 80 can be a control circuit composed of a control chip.

[0081] Specifically, the first mapping relationship may be a first mapping table stored in the control module 80, and the first mapping table stores voltage specified values ​​corresponding to different frequency bands, for example, the voltage specified value corresponding to the RF signal of the N79 frequency band is 10 V, and the voltage specified value corresponding to the RF signal of the N77 frequency band is 12 V. Specifically, the voltage specified values ​​corresponding to different frequency bands may be summarized and concluded by R&D personnel based on a large amount of test data.

[0082] Exemplarily, when the control module 80 determines that the frequency band where the RF signal is located is the N77 frequency band, it can determine that the corresponding voltage specified value of the N77 frequency band is 12V by querying the pre-stored first mapping table, and then inputs a voltage of 12V to the second input terminal 4320 of the voltage comparator 4300. In the subsequent process, when the DC voltage output by the signal detection unit 410 is greater than 12V, the voltage comparator 4300 generates a first level signal to indicate that the first switch 300 is closed.

[0083] The control module 80 in this embodiment can flexibly adjust the voltage comparison value according to the frequency band where the frequency band information is located, so that when the input RF signal is in different frequency bands, the signal detection module 40 can also accurately determine whether the signal power is too large, thereby ensuring that the signal filtering module 20 can be in normal working state.

[0084] In some possible embodiments, the shunt unit 320 may include M first resistors 3201 and M second switches 3202 corresponding to the M first resistors 3201, and the control module 80 may also be connected to the M second switches 3202. Specifically, the control module 80 is configured to: determine the voltage difference between the DC voltage and the specified voltage value when the DC voltage is greater than the specified voltage value; determine the on / off state of the M second switches 3202 based on the voltage difference and a preset second mapping relationship; and control the M second switches 3202 to work based on the on / off state of the M second switches. The second mapping relationship represents the correspondence between different voltage differences and the on / off states of the M second switches 3202. Therefore, the control module 80 in this embodiment can adjust the switch state of the M second switches 3202 according to the voltage difference between the DC voltage and the specified voltage value, and then adjust the equivalent resistance value of the shunt unit 320, so that the signal shunt module 30 can accurately shunt the signal that exceeds the specified voltage value, and the RF signal output from the signal filter module 20 can have the maximum power while ensuring that the signal filter module 20 can work normally. For example, when the signal filter module 20 can withstand a maximum RF signal of 30dB, if the RF signal output by the power amplifier module 50 is 32dB, the equivalent resistance of the shunt unit 320 can be adjusted to shunt a 2dB RF signal through the signal shunt module 30; if the RF signal output by the power amplifier module 50 is 35dB, the equivalent resistance of the shunt unit 320 can be adjusted to shunt a 5dB RF signal through the signal shunt module 30.

[0085] In some possible embodiments, the signal comparison unit 430 may be a voltage comparator 4300, and the control module 80 is connected to the first input terminal 4310 and the second input terminal 4320 of the voltage comparator 4300, and reads the DC voltage value through the first input terminal 4310, and reads the voltage specified value through the second input terminal 4320. Then, when the DC voltage is greater than the voltage specified value, the voltage difference between the DC voltage and the voltage specified value is determined. For example, when the DC voltage is 3V and the voltage specified value is 2V, the voltage difference is 1V.

[0086] The second mapping relationship may be a second mapping table stored in the control module 80, and the second mapping table stores the on-off states of the M second switches 3202 corresponding to different voltage differences. For example, when the voltage difference is 1V, the on-off states of the M second switches 3202 may be all in a closed state; when the voltage difference is 0.5V, the on-off states of the M second switches 3202 may be that one of the second switches 3202 is in a closed state, and the other second switches 3202 are in an open state. As an implementation, the on-off states of the M second switches 3202 may be represented by a string of M bits. For example, when the character in the string takes a value of 1, it indicates that the corresponding second switch 3202 is in a closed state, and when the character in the string takes a value of 0, it indicates that the corresponding second switch 3202 is in an open state. For example, taking M as 3 as an example, when the string is "111", it indicates that the three second switches 3202 are all in a closed state. Specifically, the on / off states of the M second switches 3202 corresponding to different voltage differences can be summarized and concluded by R&D personnel based on a large amount of test data.

[0087] In the subsequent process, the control module 80 can determine the on / off states of the M second switches 3202 according to the second mapping table. For example, when the voltage difference is 1V, it can be determined that the three second switches 3202 are all in the closed state, and then generate corresponding control signals to control the three second switches 3202 to close.

[0088] The control module 80 in this embodiment can adjust the switching states of the M second switches 3202 according to the voltage difference between the DC voltage and the specified voltage value, and then adjust the equivalent resistance value of the shunt unit 320. The signal shunt module 30 can accurately shunt the signal that exceeds the specified voltage value. While ensuring that the signal filter module 20 can work normally, the RF signal of the output signal filter module 20 can have maximum power.

[0089] The embodiment of the present application provides a radio frequency front-end module 100, which may include a substrate 10, a signal filtering module 20, a signal shunt module 30, a signal detection module 40, and a first chip 11 disposed on the substrate 10. The first chip 11 includes a power amplifier module 50. The signal filtering module 20 is connected to the signal output terminal 500 of the power amplifier module 50. The signal shunt module 30 includes a first switch 300 and a shunt unit 320, one end of the first switch 300 and the shunt unit 320 connected in series is connected to the common end between the signal output terminal 500 of the power amplifier module 50 and the signal filtering module 20, and the other end is grounded. The signal detection module 40 is configured to control the state of the first switch 300 based on the signal parameters of the radio frequency signal of the power amplifier module 50.

[0090] Exemplarily, the signal detection module 40 can control the first switch 300 in the signal shunt module 30 to close when the signal parameter of the RF signal of the power amplification module 50 is greater than the first specified value. The first specified value may be the maximum power value that the signal filtering module can withstand. Since the signal parameter of the RF signal is greater than the first specified value, it means that the RF signal power of the power amplification module 50 is too large at this time, which may damage the signal filtering module 20. In this case, the signal detection module 40 promptly controls the first switch 300 to close, so that the excessive RF signal can be shunted through the signal shunt module 30, and the RF signal input to the signal filtering module 20 does not exceed the maximum power value it can withstand, thereby avoiding the situation where the signal filtering module 20 is damaged when the RF signal power is too large, and ensuring the safety of the signal filtering module 20.

[0091] In addition, the signal detection module 40 can also control the first switch 300 to disconnect when the signal parameter is less than or equal to the second specified value, thereby avoiding the signal diversion module 30 from diverting the RF signal when the RF signal of the power amplification module 50 is at a normal value. This ensures that the signal filtering module 20 can be in a normal working state while the RF front-end module 100 can output the RF signal with maximum power.

[0092] In the specification of this application, certain words are used to refer to specific components in the specification and claims. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of the components as the criterion for distinction. For example, "including" mentioned throughout the specification and claims is an open term, so it should be interpreted as "including but not limited to"; "substantially" means that those skilled in the art can solve technical problems within a certain error range and basically achieve technical effects.

[0093] In the description of the present application, it should be understood that terms such as "upper", "lower", "front", "back", "left", "right", and "inside" indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are merely simplified descriptions for the convenience of describing the present application. They do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present application.

[0094] In this application, unless otherwise clearly specified or limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can be internal communication between two elements, or it can be only surface contact. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0095] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0096] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0097] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A radio frequency front-end module, It is characterized in that include: A substrate, a signal filtering module, a signal shunting module, a signal detection module, and a first chip disposed on the substrate; The first chip includes a power amplifier module; The signal filtering module is connected to the signal output end of the power amplification module; The signal shunting module comprises a first switch and a shunting unit; one end formed by the first switch and the shunting unit being connected in series is connected to the signal output end of the power amplifying module and the common end between the signal filtering module, and the other end is grounded; The signal detection module is configured to control the state of the first switch based on a signal parameter of the radio frequency signal of the power amplification module.

2. The RF front-end module according to claim 1, It is characterized in that The signal detection module is configured to control the first switch to close when the signal parameter is greater than a first specified value; and to control the first switch to open when the signal parameter is less than or equal to a second specified value, and the first specified value is greater than or equal to the second specified value.

3. The RF front-end module according to claim 1, It is characterized in that The signal detection module includes a signal detection unit and a signal comparison unit; The input end of the signal detection unit is connected to the signal output end of the power amplification module, the output end of the signal detection unit is connected to the signal comparison unit, and the signal detection unit is used to convert the radio frequency signal output by the power amplification module into a direct current signal; The signal comparison unit is connected between the signal detection unit and the first switch, and is configured to control a state of the first switch based on a signal parameter of the DC signal.

4. The RF front-end module according to claim 3, It is characterized in that The signal comparison unit comprises a voltage comparator, a first input terminal of the voltage comparator is connected to the signal detection unit, a second input terminal of the voltage comparator is used to input a specified voltage value, and an output terminal of the voltage comparator is connected to the first switch.

5. The RF front-end module according to claim 4, It is characterized in that The signal parameters of the DC signal include a DC voltage corresponding to the DC signal, and the voltage comparator is configured to: when the DC voltage is greater than the specified voltage value, send a first level signal to the first switch to indicate that the first switch is closed; when the DC voltage is less than or equal to the specified voltage value, send a second level signal to the first switch to indicate that the first switch is open, and the second level signal is different from the first level signal.

6. The RF front-end module according to claim 4, It is characterized in that The RF front-end module further includes a control module, which is connected to the voltage comparator, and is configured to: determine the voltage specified value based on the frequency band information of the RF signal input to the RF front-end module and a preset first mapping relationship; The first mapping relationship represents the correspondence between different frequency band information and different voltage specified values; The voltage comparator is controlled to operate based on the voltage specified value.

7. The RF front-end module according to claim 5, It is characterized in that The shunt unit includes a first resistance subunit; The first resistor subunit includes M first resistors and M second switches corresponding to the M first resistors, wherein M is an integer greater than 1; M first resistors are connected in series, and the second switches are connected in parallel with the corresponding first resistors; or The M first resistors are connected in parallel with each other, and the second switch is connected in series in the branch where the corresponding first resistor is located.

8. The RF front-end module according to claim 7, It is characterized in that The RF front-end module further includes a control module, the control module is connected to the voltage comparator and the M second switches, and the control module is configured to: determine a voltage difference between the DC voltage and the specified voltage value when the DC voltage is greater than the specified voltage value; determine the on / off states of the M second switches based on the voltage difference and a preset second mapping relationship, wherein the second mapping relationship represents a correspondence between different voltage differences and the on / off states of the M second switches; Based on the on / off states of the M second switches, the M second switches are controlled to operate.

9. The RF front-end module according to claim 1, It is characterized in that The shunt unit includes a second resistor subunit and a capacitor subunit, and the second resistor subunit and the capacitor subunit are connected in parallel.

10. The radio frequency front-end module according to claim 1, It is characterized in that The RF front-end module also includes a switch module, which is connected between the signal output end of the power amplifier module and the signal filtering module; One end of the signal shunting module is connected to the common end between the switch module and the signal filtering module, and the other end is grounded; or One end of the signal shunting module is connected to a common end between the switch module and the signal output end of the power amplifying module, and the other end is grounded.

11. The radio frequency front-end module according to claim 10, It is characterized in that The signal filtering module includes a plurality of filtering units, and different filtering units are configured to filter radio frequency signals of different frequency bands. The switch module includes a plurality of third switches corresponding to the plurality of filtering units one by one, and the first ends of the plurality of third switches are connected to form a common node connected to the signal output end of the power amplification module, and the second ends of the third switches are connected to the corresponding filtering units; One end of the signal shunting module is connected to a common end between the second end of at least one of the third switches and the filter unit corresponding to the third switch, and the other end is grounded; or One end of the signal shunting module is connected to a common end between the first end of at least one of the third switches and the common node, and the other end is grounded.

12. The radio frequency front-end module according to claim 1, It is characterized in that The RF front-end module further includes a second chip disposed on the substrate, wherein the second chip is a silicon-on-insulator chip or a complementary metal oxide semiconductor chip; The signal shunting module and the signal detection module are integrated in the second chip; or The signal shunting module is arranged on the substrate, and the signal detection module is integrated in the second chip.

13. The RF front-end module according to claim 1, It is characterized in that The RF front-end module further includes a third chip and a fourth chip arranged on the substrate, the third chip is a silicon-on-insulator chip, and the fourth chip is a complementary metal oxide semiconductor chip; The signal shunting module is integrated in the third chip, and the signal detection module is integrated in the fourth chip.

14. The radio frequency front-end module according to claim 10, It is characterized in that The RF front-end module further includes a fifth chip disposed on the substrate, wherein the fifth chip is a silicon-on-insulator chip; The signal shunting module, the signal detection module and the switch module are integrated in the fifth chip; or The RF front-end module further includes a sixth chip and a seventh chip arranged on the substrate, the sixth chip is a silicon-on-insulator chip, and the seventh chip is a complementary metal oxide semiconductor chip; The signal shunting module and the switch module are integrated in the sixth chip, and the signal detection module is integrated in the seventh chip.

15. The radio frequency front-end module according to claim 10, It is characterized in that The RF front-end module further includes an eighth chip disposed on the substrate, wherein the eighth chip is a silicon-on-insulator chip; The first switch in the signal shunt module and the switch module are integrated in the eighth chip, and the shunt unit in the signal shunt module is arranged on the substrate.

16. The radio frequency front-end module according to claim 3, It is characterized in that The signal detection unit includes a diode, a second resistor and a first capacitor, the anode of the diode is connected to the signal output end of the power amplification module, and the cathode of the diode is connected to the first end of the second resistor; The first end of the second resistor is also connected to the signal comparison unit, and the second end of the second resistor is grounded; one end of the first capacitor is connected to the first end of the second resistor, and the other end is grounded.

17. The RF front-end module according to claim 3, It is characterized in that The signal detection module further comprises a coupling unit, wherein the coupling unit is connected between the signal output end of the power amplification module and the input end of the signal detection unit; One end of the signal shunting module is connected to the common end between the coupling unit and the signal filtering module, and the other end is grounded; or One end of the signal shunting module is connected to a common end between the coupling unit and the signal output end of the power amplifying module, and the other end is grounded.

18. The radio frequency front-end module according to claim 17, It is characterized in that The signal output end of the power amplification module and the signal filtering module are connected via a first wiring; the coupling unit includes a second wiring and a third resistor; The second wiring is coupled to the first wiring, one end of the second wiring is connected to the input end of the signal detection unit, the other end of the second wiring is connected to one end of the third resistor, and the other end of the third resistor is grounded.

19. The radio frequency front-end module according to claim 17, It is characterized in that The RF front-end module also includes a signal matching module, which is connected between the signal output end of the power amplification module and the signal filtering module, and includes at least one matching inductor and at least one matching capacitor; the coupling unit includes a third wiring and a third resistor; The third line is inductively coupled to any one of the signal matching modules, one end of the third line is connected to the input end of the signal detection unit, the other end of the third line is connected to one end of the third resistor, and the other end of the third resistor is grounded.

20. The radio frequency front-end module according to claim 19, It is characterized in that The signal matching module includes a first matching inductor, a second matching inductor, a third matching inductor, a first matching capacitor and a second matching capacitor; One end of the first matching inductor is connected to the signal output end of the power amplification module, and the other end is connected to one end of the first matching capacitor, and the other end of the first matching capacitor is connected to the signal filtering module; One end of the second matching inductor is connected to the signal output end of the power amplifier module, and the other end is connected to the power supply end; One end of the second matching capacitor is connected to a common end of the first matching inductor and the first matching capacitor, and the other end is grounded; One end of the third matching inductor is connected to the common end of the first matching capacitor and the signal filtering module, and the other end is grounded; The third wiring is coupled to the first matching inductor, or the third wiring is coupled to the second matching inductor, or the third wiring is coupled to the third matching inductor; or, The signal matching module includes a fourth matching inductor, a fifth matching inductor, a sixth matching inductor, a third matching capacitor and a fourth matching capacitor; One end of the fourth matching inductor is connected to the signal output end of the power amplification module, and the other end is connected to one end of the fifth matching inductor, and the other end of the fifth matching inductor is connected to the signal filtering module; One end of the sixth matching inductor is connected to the signal output end of the power amplification module, and the other end is connected to the power supply end; One end of the third matching capacitor is connected to the common end of the fourth matching inductor and the fifth matching inductor, and the other end is grounded; One end of the fourth matching capacitor is connected to the common end of the fifth matching inductor and the signal filtering module, and the other end is grounded; The third line is inductively coupled to the fourth matching line, or the third line is inductively coupled to the fifth matching line, or, The signal matching module includes a seventh matching inductor, an eighth matching inductor, a ninth matching inductor, a fifth matching capacitor and a sixth matching capacitor; One end of the fifth matching capacitor is connected to the signal output end of the power amplification module, and the other end is connected to one end of the seventh matching inductor, and the other end of the seventh matching inductor is connected to the signal filtering module; One end of the eighth matching inductor is connected to the signal output end of the power amplification module, and the other end is connected to the power supply end; One end of the ninth matching inductor is connected to the common end of the fifth matching capacitor and the seventh matching inductor, and the other end is grounded; One end of the sixth matching capacitor is connected to the common end of the seventh matching inductor and the signal filtering module, and the other end is grounded; The third wiring is coupled to the seventh matching inductor, or the third wiring is coupled to the eighth matching inductor, or the third wiring is coupled to the ninth matching inductor.

21. The radio frequency front-end module according to claim 1, It is characterized in that The shunt unit includes a second capacitor and a first inductor, and the second capacitor and the first inductor are connected in parallel.

22. The radio frequency front-end module according to claim 9, It is characterized in that The filtering unit is a duplexer or a filter.

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