Mixed solution and preparation method thereof, thin film and preparation method thereof, and photoelectric device

Abstract

The invention discloses a mixed solution and a preparation method thereof, a thin film and a preparation method thereof, and a photoelectric device, and relates to the technical field of display. The mixed solution comprises a conductive organic matter, an oxidizing agent and a surfactant. According to the mixed solution provided by the invention, due to the existence of the surfactant, the conductive organic matter and the oxidizing agent cannot be crosslinked, so that the conductive organic matter and the oxidizing agent stably exist in the mixed solution.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a mixed liquid and a preparation method thereof, a thin film and a preparation method thereof, and a photoelectric device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLEDs have become the mainstream technology in the field of display technology due to their excellent display performance, such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLEDs have the advantages of saturated color and adjustable wavelength of emitted light, and high quantum yield of photoluminescence and electroluminescence, and have become a strong competitor to OLEDs in recent years.

[0003] Inkjet printing is a material-saving deposition technology that has the characteristics of simple process, low cost, low power consumption and large-scale production. It has been widely used in the preparation of multi-layer structures of optoelectronic devices. However, when the printing ink contains small molecules, it will cause at least a small part of the deposited layer to be dissolved or washed away by the solvent of the upper layer when another layer is deposited on the previously deposited layer. Summary of the invention

[0004] In view of this, the present application provides a mixed liquid and a preparation method thereof, a thin film and a preparation method thereof, and a photoelectric device.

[0005] The embodiment of the present application is implemented as follows: a mixed liquid includes a conductive organic matter, an oxidant and a surfactant.

[0006] Optionally, the present embodiment further provides a method for preparing a mixed solution, comprising:

[0007] Providing a conductive organic solution and an oxidant solution, wherein the conductive organic solution includes a conductive organic substance and a surfactant, and the oxidant solution includes an oxidant;

[0008] The conductive organic solution is mixed with the oxidant solution to obtain a mixed solution.

[0009] Optionally, the present application also provides a method for preparing a thin film, comprising:

[0010] Providing a mixed solution, wherein the mixed solution includes a conductive organic matter, an oxidant and a surfactant;

[0011] The mixed solution is treated to obtain a film.

[0012] Optionally, an embodiment of the present application further provides a film, which is prepared by the above-mentioned film preparation method.

[0013] Optionally, an embodiment of the present application further provides a photoelectric device, comprising an anode, a functional layer and a cathode stacked in sequence, wherein the functional layer is prepared by the above-mentioned thin film preparation method, or comprises the above-mentioned thin film.

[0014] The mixed solution provided in the present application can allow the conductive organic matter and the oxidant to be stably present in the mixed solution. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0016] Figure 1 is a flow chart of a method for preparing a mixed solution provided in an embodiment of the present application;

[0017] Figure 2 is a flow chart of a method for preparing a thin film provided in an embodiment of the present application;

[0018] Figure 3 is a schematic diagram of the structure of the optoelectronic device provided in an embodiment of the present application;

[0019] Figure 4 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0020] Figure 5 It is an ultraviolet micrograph of the film of Example 1 and Comparative Example 1 of the present application and a pure glass substrate.

[0021] Reference numerals:

[0022] Anode 10 ; functional layer 20 ; hole functional layer 21 ; light emitting layer 22 ; electron functional layer 23 ; cathode 30 . DETAILED DESCRIPTION

[0023] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0024] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0025] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0026] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or several", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0027] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0028] There are generally two ways to solve the problem of inter-layer solubility during inkjet printing: using orthogonal solvents and using cross-linkable polymers. There are relatively few materials to choose from in orthogonal solvents, and the compatibility between materials is poor. The use of cross-linkable materials can effectively solve the problem of inter-layer solubility during inkjet printing, but the use of cross-linkable polymers will also cause new problems. On the one hand, macromolecular polymers generally have better transmission performance, and a cross-linked polymer with a large molecular weight will result in weak resistance to solvent erosion. On the other hand, although conductive organic matter can form in-situ cross-linking with oxidants, direct mixing will have a risk of reaction and it is not easy to prepare a film.

[0029] The technical solution of this application is as follows:

[0030] In a first aspect, an embodiment of the present application provides a mixed liquid comprising a conductive organic matter, an oxidant and a surfactant.

[0031] It should be noted that the mixed liquid is a microemulsion, and the dispersion system of the microemulsion has a very high interface area and stable thermodynamic properties.

[0032] The mixed liquid provided in the present application has a surfactant, one end of which is pro-conductive organic matter and the other end of which is pro-oxidant, so that the conductive organic matter and the oxidant will not be cross-linked and can stably exist in the mixed liquid.

[0033] In some embodiments, the conductive organic matter includes hole-functional organic matter, electron-functional organic matter, or photoelectric material organic matter.

[0034] In some embodiments, the hole-functional organic compound includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)- Spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl- N-phenylamino) triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl) diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS doped with s-MoO 3One or more of the following: derivatives of poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, microcrystalline cellulose and tetracyanoquinodimethane.

[0035] In some embodiments, the electronic functional organic compound comprises 8-hydroxyquinoline aluminum (Alq 3 )、1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi), 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BALq), bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (PBD), 2,2'-(1, one or more of 1,3-bis(3,5-dipyridin-3-ylphenyl)benzene (BmPyPhB), bis(1,3-bis(3,5-dipyridin-3-ylphenyl)benzene (BmPyPhB), and n,n′-bis(naphthalene-1-yl)-n,n′-bis(phenyl)benzidine (NPD).

[0036] In some embodiments, the optoelectronic material type organic substance includes CBP:Ir(mppy) 3 (4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy)(4,4',4"-tri(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium]), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing BN covalent bonds, HLCT (hybridized localized charge transfer excited state) materials, Exciplex (exciplex) luminescent materials, one or more thereof.

[0037] In some embodiments, the oxidizing agent comprises phosphomolybdic acid (PMA).

[0038] In some embodiments, the surfactant includes one or more of organic sulfates and organic sulfonates.

[0039] Furthermore, the organic sulfate includes one or more of sodium dodecyl sulfate, ammonium lauroyl sulfate, sodium cocoyl sulfate, sodium lauroyl sulfate, potassium cocoyl sulfate, potassium lauryl sulfate, triethanolamine lauryl sulfate, triethanolamine lauryl sulfate, monoethanolamine cocoyl sulfate, and monoethanolamine lauryl sulfate.

[0040] The organic sulfonate includes one or more of sodium tridecylbenzene sulfonate and sodium dodecylbenzene sulfonate.

[0041] In some embodiments, in the mixed solution, the mass ratio of the conductive organic matter, the oxidant and the surfactant is (2-20):1:(1-10), for example, 5:1:5, 8:1:5, 10:1:5, 15:1:5, 18:1:5, etc. Within the mass ratio range, the mixed solution can exist stably, and the conductive organic matter and the oxidant will not cross-link.

[0042] In some embodiments, the mixed liquid further includes a solvent, and the solvent includes a first solvent and a second solvent.

[0043] In some embodiments, the polarity of the first solvent is different from the polarity of the second solvent, so as to further prevent the conductive organic matter and the oxidant from being miscible with each other.

[0044] Furthermore, the polarity of the first solvent is greater than the polarity of the second solvent.

[0045] In some embodiments, the first solvent includes one or more of acetonitrile, acetone, tetrahydrofuran, pyridine, methyl ethyl ketone, and methanol.

[0046] In some embodiments, the second solvent includes one or more of n-hexane, cyclohexane, cyclopentane, pentane, and heptane.

[0047] In some embodiments, the mixed solution further includes a co-surfactant.

[0048] Furthermore, the co-surfactant includes one or more of polyethylene glycol glyceryl fatty ester, alkyl glycoside, long-chain dialkyl sulfoxide, and long-chain tertiary amine oxide. It can be understood that the co-surfactant can promote the stable existence of the mixed solution.

[0049] Furthermore, the main chain carbon number of the long-chain tertiary amine oxide is 12-22.

[0050] In some embodiments, the long-chain tertiary amine oxide includes one or more of dimethyl octadecylamine oxide, oleyl di(methyl)amine oxide, dimethyl hexadecylamine oxide, and behenyl dimethylamine oxide.

[0051] In some embodiments, the main chain of the long-chain dialkyl sulfoxide has 12 to 20 carbon atoms.

[0052] In some embodiments, the mass ratio of the oxidant to the co-surfactant is (1-20):1, for example, it can be 2:1, 5:1, 8:1, 10:1, 12:1, 15:1, 18:1, etc.

[0053] In some embodiments, the mixed liquid consists of the conductive organic matter, the oxidant, the surfactant, the first solvent and the second solvent.

[0054] In some embodiments, the mixed liquid consists of the conductive organic matter, the oxidant, the surfactant and the co-surfactant, the first solvent, and the second solvent.

[0055] Second, see Figure 1 The present application also provides a method for preparing a mixed solution, comprising:

[0056] S11, providing a conductive organic solution and an oxidant solution, wherein the conductive organic solution includes a conductive organic substance and a surfactant, and the oxidant solution includes an oxidant;

[0057] S12, mixing the conductive organic solution and the oxidant solution to obtain a mixed solution.

[0058] In the S11:

[0059] In some embodiments, in the conductive organic solution, the mass concentration of the conductive organic matter is 1 mg / mL to 50 mg / mL, for example, 5 mg / mL, 10 mg / mL, 20 mg / mL, 25 mg / mL, 30 mg / mL, 40 mg / mL, etc.

[0060] In some embodiments, in the oxidant solution, the mass concentration of the oxidant is 1 mg / mL to 10 mg / mL, for example, 2 mg / mL, 5 mg / mL, 8 mg / mL, etc.

[0061] In some embodiments, the oxidant solution further includes a co-surfactant.

[0062] Furthermore, in the oxidant solution, the mass ratio of the oxidant to the co-surfactant is (1-20):1, for example, it can be 2:1, 5:1, 8:1, 10:1, 12:1, 15:1, 18:1, etc.

[0063] In some embodiments, the conductive organic solution includes a first solvent, and the oxidant solution includes a second solvent; the polarity of the first solvent is different from the polarity of the second solvent.

[0064] In some embodiments, the volume ratio of the conductive organic solution to the oxidant solution is (2-4):1, for example, 2.2:1, 2.4:1, 2.6:1, 2.8:1, 3:1, 3.2:1, 3.4:1, 3.6:1, 3.8:1, etc. Within the volume ratio range, it is beneficial to prepare a thin film with the mixed solution.

[0065] In S12:

[0066] In some embodiments, after the conductive organic solution and the oxidant solution are mixed, ultrasonic treatment is further included.

[0067] Furthermore, the frequency of the ultrasonic treatment is 40 Hz to 60 Hz, for example, 42 Hz, 45 Hz, 48 Hz, 50 Hz, 52 Hz, 55 Hz, 58 Hz, etc.; the time is 3 min to 8 min, for example, 4 min, 5 min, 6 min, 7 min, 8 min, etc.; the temperature is 20°C to 30°C, for example, 22°C, 25°C, 28°C, etc.

[0068] Thus, under the above-mentioned ultrasonic treatment conditions, it is beneficial for the oxidant solution and the conductive organic solution to be uniformly dispersed. It should be noted that at this time, the oxidant solution and the conductive organic solution are not miscible.

[0069] Third, see Figure 2 The present invention also provides a method for preparing a thin film, comprising:

[0070] S21, providing a mixed solution, wherein the mixed solution includes a conductive organic matter, an oxidant and a surfactant;

[0071] S22, treating the mixed solution to obtain a thin film.

[0072] In S22:

[0073] It should be noted that the method for obtaining the thin film can adopt conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. The physical method includes physical coating and solution method, among which the physical coating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, doctor blade coating, printing, dip-coating, immersion, spraying, roll coating, casting, slit coating, and strip coating, etc.

[0074] In at least one embodiment, the method for obtaining the thin film is inkjet printing.

[0075] In some embodiments, the voltage of the inkjet printing is 14V to 20V, for example, it can be 15V, 16V, 17V, 18V, etc.; the spacing is 3μm to 8μm, for example, it can be 4μm, 5μm, 6μm, 7μm, etc.; the diameter of the nozzle is 0.2μm to 0.3μm, for example, it can be 0.22μm, 0.24μm, 0.26μm, 0.28μm, etc.

[0076] In some embodiments, the mixed liquid further includes a solvent, and the solvent includes a first solvent and a second solvent; the polarity of the first solvent is different from the polarity of the second solvent.

[0077] In some embodiments, the method of treating the mixed solution includes annealing.

[0078] Furthermore, the annealing temperature is 120°C to 150°C, for example, 125°C, 130°C, 135°C, 140°C, 145°C, etc.; the annealing time is 1 min to 5 min, for example, 2 min, 3 min, 4 min, etc.

[0079] In this way, under the above annealing conditions, it is beneficial to remove the solvent, so that the conductive organic matter and the oxide are cross-linked to form a dense film, and the film can be prevented from being mutually dissolved with other film layers.

[0080] In a fourth aspect, an embodiment of the present application further provides a film prepared by the above-mentioned preparation method.

[0081] In some embodiments, the film includes a cross-linking polymer, and the cross-linking polymer is obtained by a cross-linking reaction between a conductive organic substance and an oxidant.

[0082] For example, when the conductive organic matter is PVK and the oxidant is PMA, the radical cations generated by PMA can serve as reaction intermediates to covalently cross-link the electron-rich aromatic compound PVK through the oxidant.

[0083] In some embodiments, the thickness of the film is 20 nm to 30 nm, for example, 22 nm, 25 nm, 25.9 nm, 28 nm, etc.

[0084] Fifth, please refer to Figure 3 The embodiment of the present application further provides a photoelectric device, comprising an anode 10, a functional layer 20 and a cathode 30 stacked in sequence, wherein the functional layer comprises a thin film obtained by the above-mentioned thin film preparation method.

[0085] In the optoelectronic device provided in the present application, the functional layer 20 includes a film prepared by the above-mentioned film preparation method. Due to the presence of surfactants in the mixed liquid, the conductive organic matter and oxides in the mixed liquid exist stably and will not cross-link. After being set on the base film, cross-linking occurs after annealing, which is beneficial to improve the density and film-forming properties of the film, and can effectively improve the solvent resistance of the film, prevent the mutual dissolution of the film and its adjacent film layers during the preparation process, promote the uniformity of each film layer, reduce the roughness of the film, and thus improve the performance of the optoelectronic device.

[0086] See also Figure 4 In some embodiments, the functional layer 20 includes one or more of a hole functional layer 21, a light-emitting layer 22, and an electronic functional layer 23; the hole functional layer 21 is arranged between the anode 10 and the light-emitting layer 22, and the electronic functional layer 23 is arranged between the light-emitting layer 22 and the cathode 30; one or more of the hole functional layer 21, the light-emitting layer 22, and the electronic functional layer 23 are prepared by the above-mentioned thin film preparation method.

[0087] Furthermore, the hole functional layer 21 includes one or more of a hole injection layer and a hole transport layer.

[0088] The electronic functional layer 23 includes one or more of an electron injection layer and an electron transport layer.

[0089] In some embodiments, the anode 10 and the cathode 30 each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is arranged between doped or undoped transparent metal oxides, and the material of the metal oxide electrode includes ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO 3 and one or more of AMO, the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2 One or more of the above. Wherein, “ / ” indicates a stacked structure, for example, AZO / Ag / AZO indicates a composite electrode including an AZO layer, an Ag layer and an AZO layer stacked in sequence.

[0090] In some embodiments, the material of the light-emitting layer 22 includes one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0091] The organic light emitting material may be selected from but not limited to CBP:Ir(mppy) 3 (4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy)(4,4',4"-tri(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium]), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing BN covalent bonds, HLCT (hybridized localized charge transfer excited state) materials, Exciplex (exciplex) luminescent materials, one or more thereof.

[0092] The quantum dot light-emitting material may be selected from, but not limited to, one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0093] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots can be respectively selected from but not limited to one or more of the group II-VI compounds, group IV-VI compounds, group III-V compounds and group I-III-VI compounds. The II-VI group compound can be selected from but not limited to one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compound can be selected from but not limited to one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound may be selected from, but not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb. The I-III-VI group compound may be selected from, but not limited to, CuInS 2 、CuInSe 2 and AgInS 2 One or more of the .

[0094] As an example, the quantum dots of the core-shell structure may be selected from, but not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS. The “ / ” in the above expressions such as CdSe / ZnS means that the substance after the “ / ” (as a shell layer) covers the substance before the “ / ” (as a core layer).

[0095] The perovskite semiconductor material may be selected from, but not limited to, doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The inorganic perovskite semiconductor has the general structural formula AMX 3 , where A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of the following, X is a halogen anion selected from Cl-, Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , wherein B is an organic amine cation selected from CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 ] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - , I-one or more.

[0096] It can be understood that when the hole functional layer 21 and / or the electron functional layer 23 are prepared by the above-mentioned thin film preparation method, the material of the light-emitting layer 22 can be either an organic light-emitting material or a quantum dot light-emitting material. When the light-emitting layer 22 is prepared by the above-mentioned thin film preparation method, the material of the light-emitting layer 22 includes an organic light-emitting material and an oxidant.

[0097] In some embodiments, the material of the hole functional layer 21 includes one or more of an organic hole functional material and an inorganic hole functional material, wherein the organic hole functional material includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'- diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5- (2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS doped with s-MoO 3The inorganic hole functional material comprises one or more of nano-polycrystalline diamond, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, and the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently comprises MoO 3 , WO 3 、NiO、CrO 3 , CuO, V 2 O 5 The doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V, and the metal sulfide includes CuS, MoS 3 , WS 3 One or more of the metal selenides, wherein the metal selenides include MoSe 3 ,WSe 3 One or more of the above, wherein the metal nitride comprises P-type gallium nitride.

[0098] It can be understood that when the light-emitting layer 22 and / or the electronic functional layer 23 are prepared by the above-mentioned thin film preparation method, the material of the hole functional layer 21 can be either an organic hole functional material or an inorganic hole functional material. When the hole functional layer 21 is prepared by the above-mentioned thin film preparation method, the material of the hole functional layer 21 includes an organic hole functional material and an oxidant.

[0099] In some embodiments, the material of the electronic functional layer 23 includes one or more of an organic electronic functional material and an inorganic electronic functional material; the organic electronic functional material includes 8-hydroxyquinoline aluminum (Alq 3), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi), 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), bis(2-methyl-8 -Hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BALq), bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (PBD), 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole] (OXD-7), tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl The inorganic electronic functional material comprises one or more of the following: 1,4-diphenyl-1,4-diphenyl-2-yl] ... 2 SnO 2 、ZrO 2 、 2 O 5 One or more of the following, the metal oxide in the first doped metal oxide particles includes ZnO, TiO 2 SnO 2 、ZrO 2 、 2 O 5 、Al 2 O 3 The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS.

[0100] It can be understood that when the light-emitting layer 22 and / or the hole functional layer 21 are prepared by the above-mentioned thin film preparation method, the material of the electronic functional layer 23 can be either an organic electronic functional material or an inorganic electronic functional material. When the electronic functional layer 23 is prepared by the above-mentioned thin film preparation method, the material of the electronic functional layer 23 includes an organic electronic functional material and an oxidant.

[0101] In a sixth aspect, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0102] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0103] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0104] Example 1

[0105] This embodiment provides a thin film, and the preparation method thereof is as follows:

[0106] PVK was dissolved in acetonitrile solvent at a concentration of 10 mg / mL, and a surfactant, sodium dodecyl sulfate, was added. PMA material was dissolved in n-hexane solvent at a concentration of 6 mg / mL, and a co-surfactant, polyethylene glycol glyceryl fatty ester, was added, and stirred at room temperature for 1 hour. After stirring evenly, the PMA solution was added to the PVK solution, and the volume ratio of the PMA solution to the PVK solution was 3:1. After ultrasonication for 30 minutes, a mixed solution was formed;

[0107] A glass substrate was provided, and the mixed solution was spin-coated on the glass substrate at a spin-coating speed of 1500 rpm for 30 seconds and solidified at 130° C. for 2 minutes to obtain a thin film.

[0108] Embodiment 2-3

[0109] Examples 2 to 3 are substantially the same as Example 1, except that the volume ratios of the PMA solution to the PVK solution are replaced with 4:1 and 2:1 in Examples 2 to 3, respectively.

[0110] Embodiment 4-5

[0111] Examples 4 to 5 are substantially the same as Example 1, except that PVK is replaced by Bphen and CBP:Ir(mppy) in Examples 4 to 5, respectively. 3 .

[0112] Embodiment 6-7

[0113] Examples 6 to 7 are substantially the same as Example 1, except that in Examples 6 to 7, sodium lauryl sulfate is replaced by potassium cocoyl sulfate; and polyethylene glycol glyceryl fatty ester is replaced by dimethyl octadecylamine oxide.

[0114] Embodiments 8 to 9

[0115] Examples 8 to 9 are substantially the same as Example 1, except that the film solidification temperatures in Examples 8 to 9 are 150° C. and 120° C., respectively.

[0116] Comparative Examples 1 to 3

[0117] Comparative Examples 1 to 3 are substantially the same as Example 1, except that the surfactant sodium lauryl sulfate and the co-surfactant polyethylene glycol glyceryl fatty ester are not used in Comparative Examples 1 to 3, and PVK is replaced by Bphen and CBP:Ir(mppy) in Comparative Examples 2 to 3, respectively. 3 .

[0118] Comparative Example 4

[0119] Comparative Example 4 is substantially the same as Example 1, except that the surfactant sodium dodecyl sulfate and the PMA solution are not used in Comparative Example 4.

[0120] The film of Example 1 and Comparative Example 1 was subjected to solvent resistance test: the film was spin-washed with xylene solvent at a rotation speed of 1500 rpm, spin-coated for 60 seconds, and then annealed at 140°C for 20 minutes. The pure glass substrate, Example 1 and Comparative Example 1 were photographed by ultraviolet microscope, and the results were obtained. Figure 5 In addition, a step profiler was used to test the thickness of the film before and after the solvent resistance test.

[0121] According to the thickness test, the thickness of the film of Example 1 before the solvent resistance test was 25.9 nm, and the thickness after the solvent resistance test was 25.7 nm, which was only reduced by 0.2 nm, while the thickness of the film of Comparative Example 1 before the solvent resistance test was 23.4 nm, and the thickness after the solvent resistance test was 22.4 nm, which was reduced by 1 nm. Figure 5It can be seen that the film surface of Example 1 is uniform and there is no obvious solvent erosion phenomenon, while the film of Comparative Example 1 has light and dark alternating patterns or holes, and is severely eroded by the solvent. This indicates that the oxidant and the conductive organic matter in the mixed solution provided by the present application are not cross-linked, and effective cross-linking is carried out when preparing the film, so that the film has good film-forming properties, high stability, and can effectively resist solvent erosion.

[0122] Device Example 1

[0123] This embodiment provides a photoelectric device, and the preparation method is as follows:

[0124] The ITO conductive glass was cleaned with a detergent to preliminarily remove the stains on the surface, and then ultrasonically cleaned in deionized water, acetone, anhydrous ethanol, and deionized water for 20 minutes to remove impurities on the surface, and finally dried with high-purity nitrogen to form an ITO anode;

[0125] Prepare the hole transport layer as in Example 1;

[0126] Configuring CBP:Ir(mppy) 3 The solution was spin-coated on the hole transport layer at a speed of 3000 rpm for 30 s and heated at 80 °C for 30 min to form a 40 nm light-emitting layer;

[0127] The Bphen solution was spin-coated on the light-emitting layer at a speed of 4000 rpm for 30 seconds, and then heated at 80°C for 30 minutes to form a 40 nm electron transport layer;

[0128] On the electron transport layer, Ag is deposited by thermal evaporation with a vacuum degree not higher than 3x10 -4 Pa, speed 1 Å / s, time 1000s, thickness 100nm, forming cathode;

[0129] Encapsulation is performed to obtain an optoelectronic device.

[0130] Device Examples 2-3, 6-9

[0131] Device Examples 2 to 3, 6 to 9 are substantially the same as Device Example 1, except that the hole transport layers in Device Examples 2 to 3, 6 to 9 are prepared according to Examples 2 to 3, 6 to 9, respectively.

[0132] Device Examples 4-5

[0133] Device Examples 4 to 5 are substantially the same as Device Example 1, except that the preparation method of the hole transport layer in Device Examples 4 to 5 is as follows: PVK is dissolved in chlorobenzene to a concentration of 8 mg / mL, and is spin-coated on an ITO anode at a spin-coating speed of 3000 rpm for 30 s, and heated at 150° C. for 30 min to form a 30 nm hole transport layer;

[0134] In device embodiments 4 to 5, the electron transport layer and the light-emitting layer are prepared according to embodiments 4 to 5, respectively.

[0135] Device Example 10

[0136] The device embodiment of this invention is substantially the same as the device embodiment 1, with the only difference being that the electron transport layer of this device embodiment is prepared with reference to the embodiment 4, and the light-emitting layer is prepared with reference to the embodiment 5.

[0137] Device Comparison Examples 1 to 4

[0138] Device Comparative Examples 1 to 4 are basically the same as Device Example 1, except that, in Device Comparative Examples 1 to 4, a hole transport layer, an electron transport layer, a light-emitting layer and a hole transport layer are prepared according to Comparative Examples 1 to 4, respectively, wherein the preparation method of the hole transport layer in Comparative Examples 2 to 3 is as follows: PVK is dissolved in chlorobenzene at a concentration of 8 mg / mL, and is spin-coated on an ITO anode at a spin coating speed of 3000 rpm for 30 s, and heated at 150°C for 30 min to form a 30 nm hole transport layer.

[0139] The brightness and current density of the optoelectronic devices of device embodiments 1 to 10 and device comparison examples 1 to 4 were tested at 10 mA cm -2 The voltage at (J10) is shown in Table 1.

[0140] The test method for brightness and voltage is as follows: the efficiency test system built by Keithley 2400 and Keithley 6485 measures the corresponding voltage, current and brightness.

[0141] Table 1

[0142]

[0143] From Table 1, we can see that:

[0144] It can be seen from device embodiments 1 to 3 and comparative examples 1 and 4 that within the range provided by the present application, when the volume ratio of the conductive organic solution to the oxidant solution is moderate, the brightness of device embodiment 1 is the brightest, and the voltage of device embodiments 1 to 3 under J10 does not change much, but is much lower than that of device comparative example 1. This is because the use of the mixed solution provided by the present application can effectively improve the film forming property and density of the film, thereby improving the conductive continuity, reducing the resistance, and thus reducing the voltage; the use of the oxidant can promote the cross-linking of the conductive organic matter into a film, and the device comparative example 4 contains only conductive organic matter, which is easy to cause solvent erosion, so its brightness is low and the voltage is high;

[0145] It can be seen from device examples 1, 4 to 5, 10 and device comparative examples 1 to 3 that whether the hole functional layer, the electron functional layer or the light-emitting layer is prepared by the mixed solution provided in the present application, the brightness of the photoelectric device can be improved and the voltage under J10 can be reduced. Among them, when the hole functional layer, the electron functional layer and the light-emitting layer are all prepared by the mixed solution provided in the present application, the effect is the best;

[0146] It can be seen from device examples 1, 6-7 and device comparative example 1 that the replacement of surfactants and co-surfactants has a certain influence on the performance of the mixed solution, thereby causing performance differences of the optoelectronic devices, but the brightness and voltage under J10 of the optoelectronic devices of device examples 1, 6-7 are significantly better than those of device comparative example 1;

[0147] It can be seen from device embodiments 1, 8 to 9 and device comparison example 1 that the annealing temperature will affect the cross-linking of the conductive organic matter and the oxidant. Within the annealing temperature range provided in the present application, the cross-linking of the conductive organic matter and the oxidant can be effectively promoted, the film-forming property of the thin film can be improved, and the brightness of the photoelectric device can be improved, while the voltage of the photoelectric device can be reduced.

[0148] The mixed liquid and its preparation method, thin film and its preparation method, and optoelectronic device provided in the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A mixed solution, characterized in that: Includes conductive organic matter, oxidants and surfactants.

2. The mixed solution according to claim 1, characterized in that In the mixed solution, the mass ratio of the conductive organic matter, the oxidant and the surfactant is (2-20):1:(1-10); and / or The oxidant comprises phosphomolybdic acid; and / or The surfactant includes one or more of organic sulfates and organic sulfonates; Optionally, the organic sulfate includes one or more of sodium lauryl sulfate, ammonium lauroyl sulfate, sodium cocoyl sulfate, sodium lauroyl sulfate, potassium cocoyl sulfate, potassium lauryl sulfate, triethanolamine lauryl sulfate, triethanolamine lauryl sulfate, monoethanolamine cocoyl sulfate, and monoethanolamine lauryl sulfate; Optionally, the organic sulfonate includes one or more of sodium tridecylbenzene sulfonate and sodium dodecylbenzene sulfonate.

3. The mixed solution according to claim 1, characterized in that The conductive organic matter includes hole-functional organic matter, electron-functional organic matter or photoelectric material organic matter; Optionally, the hole-functional organic compound includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N' -diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] , poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'- One or more of biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, microcrystalline cellulose and tetracyanoquinodimethane; Optionally, the electronic functional organic matter includes 8-hydroxyquinoline aluminum, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, One or more of benzene-4-hydroxy)aluminum, 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole], tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane, tetrakis[(m-pyridyl)-phenyl-3-yl]biphenyl, 3,3'-[5'-[3-(3-pyridyl)phenyl][1,1':3',1"-terphenyl]-3,3"-diyl]bipyridine, 1,3-bis(3,5-bipyridin-3-ylphenyl)benzene, n,n'-bis(naphthalene-1-yl)-n,n'-bis(phenyl)benzidine; Optionally, the optoelectronic material type organic matter includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4"-tri(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium], diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, and exciplex luminescent materials.

4. The mixed solution according to claim 1, characterized in that The mixed liquid further includes a solvent, and the solvent includes a first solvent and a second solvent; the polarity of the first solvent is different from the polarity of the second solvent; Optionally, the first solvent includes one or more of acetonitrile, acetone, tetrahydrofuran, pyridine, methyl ethyl ketone, and methanol; Optionally, the second solvent includes one or more of n-hexane, cyclohexane, cyclopentane, pentane, and heptane; And / or, the mixed solution further includes a co-surfactant; Optionally, the co-surfactant includes one or more of polyethylene glycol glyceryl fatty esters, alkyl glycosides, long-chain dialkyl sulfoxides, and long-chain tertiary amine oxides; Optionally, the mass ratio of the oxidant to the co-surfactant is (1-20):

1.

5. A method for preparing a mixed solution, characterized in that: include: Providing a conductive organic solution and an oxidant solution, wherein the conductive organic solution includes a conductive organic substance and a surfactant, and the oxidant solution includes an oxidant; The conductive organic solution is mixed with the oxidant solution to obtain a mixed solution.

6. The preparation method according to claim 5, characterized in that: The volume ratio of the conductive organic solution to the oxidant solution is (2-4):1; and / or In the conductive organic solution, the mass concentration of the conductive organic matter is 1 mg / mL to 50 mg / mL; and / or In the conductive organic solution, the mass ratio of the conductive organic substance to the surfactant is (2-20): (1-10); and / or In the oxidant solution, the mass concentration of the oxidant is 1 mg / mL to 10 mg / mL; and / or The conductive organic solution includes a first solvent, and the oxidant solution includes a second solvent; the polarity of the first solvent is different from the polarity of the second solvent.

7. The preparation method according to claim 6, characterized in that: The conductive organic matter includes hole-functional organic matter, electron-functional organic matter or photoelectric material organic matter; and / or The oxidant comprises phosphomolybdic acid; and / or The first solvent comprises one or more of acetonitrile, acetone, tetrahydrofuran, pyridine, methyl ethyl ketone, and methanol; and / or The second solvent includes one or more of n-hexane, cyclohexane, cyclopentane, pentane, and heptane, and the surfactant includes one or more of organic sulfates and organic sulfonates; Optionally, the organic sulfate includes one or more of sodium lauryl sulfate, ammonium lauroyl sulfate, sodium cocoyl sulfate, sodium lauroyl sulfate, potassium cocoyl sulfate, potassium lauryl sulfate, triethanolamine lauryl sulfate, triethanolamine lauryl sulfate, monoethanolamine cocoyl sulfate, and monoethanolamine lauryl sulfate; Optionally, the organic sulfonate includes one or more of sodium tridecylbenzene sulfonate and sodium dodecylbenzene sulfonate.

8. The preparation method according to claim 5, characterized in that: The oxidant solution also includes a co-surfactant; Optionally, the co-surfactant includes one or more of polyethylene glycol glyceryl fatty esters, alkyl glycosides, long-chain dialkyl sulfoxides, and long-chain tertiary amine oxides; Optionally, the mass ratio of the oxidant to the co-surfactant is (1-20):1; and / or, after the conductive organic solution and the oxidant solution are mixed, ultrasonic treatment is also included; Optionally, the frequency of the ultrasonic treatment is 40 Hz to 60 Hz, and the time is 3 min to 8 min.

9. A method for preparing a thin film, characterized in that: include: Providing a mixed solution, wherein the mixed solution includes a conductive organic matter, an oxidant and a surfactant; The mixed solution is treated to obtain a film.

10. The preparation method according to claim 9, characterized in that: The mass ratio of the conductive organic matter, the oxidant and the surfactant is (2-20):1:(1-10); And / or, the conductive organic matter includes hole-functional organic matter, electron-functional organic matter or photoelectric material organic matter; And / or, the method of treating the mixed solution includes annealing; Optionally, the annealing temperature is 120° C. to 150° C., and the time is 1 min to 5 min; And / or, the method for obtaining the film is inkjet printing; Optionally, the voltage of the inkjet printing is 14V to 20V, the spacing is 3μm to 8μm, and the diameter of the nozzle is 0.2μm to 0.3μm; And / or, the mixed liquid further includes a solvent, and the solvent includes a first solvent and a second solvent; the polarity of the first solvent is different from the polarity of the second solvent; Optionally, the first solvent includes one or more of acetonitrile, acetone, tetrahydrofuran, pyridine, methyl ethyl ketone, and methanol; Optionally, the second solvent includes one or more of n-hexane, cyclohexane, cyclopentane, pentane, and heptane; and the surfactant includes one or more of organic sulfates and organic sulfonates.

11. A film, characterized in that: Prepared by the method for preparing a thin film according to any one of claims 9 to 10; And / or, the film includes a cross-linking polymer, and the cross-linking polymer is obtained by a cross-linking reaction between a conductive organic substance and an oxidant.

12. The film according to claim 11, characterized in that The thickness of the film is 20nm to 30nm; and / or The mass ratio of the conductive organic matter to the oxidant is (2-20):1; and / or The conductive organic matter includes hole-functional organic matter, electron-functional organic matter or photoelectric material organic matter.

13. A photoelectric device, comprising an anode, a functional layer and a cathode stacked in sequence, characterized in that: The functional layer is prepared by the method for preparing a thin film according to any one of claims 9 to 10, or comprises the thin film according to any one of claims 11 to 12.

14. The optoelectronic device according to claim 13, wherein: The functional layer includes one or more of a hole functional layer, a light-emitting layer, and an electronic functional layer; the hole functional layer is arranged between the anode and the light-emitting layer, and the electronic functional layer is arranged between the light-emitting layer and the cathode; the hole functional layer, the light-emitting layer, and the electronic functional layer are prepared by the thin film preparation method according to any one of claims 9 to 10; When the hole functional layer and / or the electron functional layer are prepared by the method for preparing a thin film according to any one of claims 9 to 10, the material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material; when the light-emitting layer is prepared by the method for preparing a thin film according to any one of claims 9 to 10, the material of the light-emitting layer includes an organic light-emitting material and an oxidant; and / or When the light-emitting layer and / or the electronic functional layer are prepared by the method for preparing a thin film according to any one of claims 9 to 10, the material of the hole functional layer includes one or more of an organic hole functional material and an inorganic hole functional material; when the hole functional layer is prepared by the method for preparing a thin film according to any one of claims 9 to 10, the material of the hole functional layer includes an organic hole functional material and an oxidant; and / or When the light-emitting layer and / or the hole functional layer are prepared by the thin film preparation method described in any one of claims 9 to 10, the material of the electronic functional layer includes one or more of organic electronic functional materials and inorganic electronic functional materials; when the electronic functional layer is prepared by the thin film preparation method described in any one of claims 9 to 10, the material of the electronic functional layer includes organic electronic functional materials and an oxidant.

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