Ultra-clean control method and control system for wafer etching environment

Abstract

The invention provides an ultra-clean control method and system for a wafer etching environment, and relates to the technical field of semiconductor devices, and the method comprises the steps: obtaining the laminar flow distribution of an ultra-clean space, constructing a laminar flow distribution diagram, and fitting a streamline track; obtaining process space distribution of wafer etching, performing coordinate mapping, and establishing a mapping relationship between the wafer etching process and laminar flow distribution; reading process pollution discharge requirements and airflow control parameters of wafer etching, performing streamline fitting, and determining matched streamline data; and determining an airflow deviation value, and analyzing airflow control parameters to obtain adjustment control parameters for adjusting the airflow control parameters so as to meet the streamline data requirement of the process pollution discharge requirement. The technical problems that in the prior art, airflow control is mostly in a static state, airflow cannot be dynamically adjusted according to real-time process requirements and environment changes, personalized requirements of different areas for airflow cannot be met, and the airflow control accuracy is poor are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to an ultra-clean control method and control system for a wafer etching environment. Background Art

[0002] In the production process of integrated circuits, wafers need to go through multiple etching steps to accurately form circuit patterns. The etching process has extremely high requirements for environmental cleanliness to ensure that the tiny structures of the circuit can be accurately formed. However, the existing etching environment airflow control is mostly statically set, and it is impossible to dynamically adjust the airflow according to real-time process requirements and environmental changes. Since the etching process is complex and changeable, the generation of pollutants is uncertain. This static setting method cannot optimize the airflow in time according to the actual pollution discharge needs of the process area, resulting in accumulation of pollutants and affecting process stability. In addition, different process areas have different requirements for airflow. Existing technologies usually find it difficult to achieve refined management of airflow parameters in different areas. For example, some areas require higher airflow speeds to ensure effective discharge of particulate matter, while other areas require lower airflow intensities to avoid interfering with the etching process. Existing control methods find it difficult to flexibly respond to the airflow requirements of different areas in the same environment, which in turn leads to unstable cleanliness during the etching process. Summary of the invention

[0003] The present application provides an ultra-clean control method and control system for a wafer etching environment, aiming to solve the technical problems that the airflow control in the prior art is mostly statically set, cannot dynamically adjust the airflow according to real-time process requirements and environmental changes, and cannot meet the personalized requirements of different areas for airflow, resulting in poor accuracy of airflow control, which in turn leads to poor reliability of the etching process and poor product quality.

[0004] In a first aspect disclosed in the present application, a method for ultra-clean control of a wafer etching environment is provided, the method comprising: connecting a control module to obtain a laminar flow distribution of an ultra-clean space, constructing a laminar flow distribution map, and fitting streamline trajectories to the laminar flow distribution map, wherein streamlines are used to describe airflow speed, direction and distribution, the faster the airflow speed, the denser the streamlines, the boundary width of the streamline distribution represents the airflow distribution, and the arrow represents the airflow direction; obtaining a process space distribution of wafer etching, performing coordinate mapping with the laminar flow distribution map according to the position coordinates of the process space distribution, and establishing a mapping relationship between the wafer etching process and the laminar flow distribution; reading the process pollution discharge requirements and airflow control parameters of wafer etching through the control module, fitting the streamlines of each laminar flow in the laminar flow distribution map using the airflow control parameters, and determining matching streamline data of the wafer etching process area according to the mapping relationship; matching the matching streamline data with the process pollution discharge requirements, determining an airflow deviation value, parsing the airflow control parameters according to the airflow deviation value, and obtaining adjustment control parameters, the adjustment control parameters being used to adjust the airflow control parameters to meet the streamline data requirements of the process pollution discharge requirements.

[0005] The second aspect disclosed in the present application provides an ultra-clean control system for a wafer etching environment, the system being used for the above-mentioned ultra-clean control method for a wafer etching environment, the system comprising: a laminar flow distribution map construction unit, the laminar flow distribution map construction unit being used to connect to a control module to obtain the laminar flow distribution of an ultra-clean space, construct a laminar flow distribution map, and fit streamline trajectories to the laminar flow distribution map, wherein streamlines are used to describe airflow velocity, direction, and distribution, the faster the airflow velocity, the denser the streamlines, the boundary width of the streamline distribution represents the airflow distribution, and the arrow represents the airflow direction; a mapping relationship establishment unit, the mapping relationship establishment unit being used to obtain the process space distribution of wafer etching, perform coordinate mapping with the laminar flow distribution map according to the position coordinates of the process space distribution, and establish a wafer A mapping relationship between etching process and laminar flow distribution; a matching streamline data determination unit, the matching streamline data determination unit is used to read the process pollution removal requirements and airflow control parameters of wafer etching through the control module, use the airflow control parameters to perform streamline fitting of each laminar flow in the laminar flow distribution diagram, and determine the matching streamline data of the wafer etching process area according to the mapping relationship; an airflow control parameter parsing unit, the airflow control parameter parsing unit is used to match the matching streamline data with the process pollution removal requirements, determine the airflow deviation value, perform the airflow control parameter parsing according to the airflow deviation value, and obtain the adjustment control parameters, the adjustment control parameters are used to adjust the airflow control parameters to meet the streamline data requirements of the process pollution removal requirements.

[0006] One or more technical solutions provided in this application have at least the following technical effects or advantages: The laminar flow distribution of the ultra-clean space is obtained, a laminar flow distribution map is constructed, and the streamline trajectory is fitted. The streamline fitting not only describes the speed, direction and other parameters of the airflow, but also clearly indicates the boundary and flow direction of the airflow, which makes the airflow state of the entire ultra-clean space more controllable and avoids the formation of turbulence and dead corners. The process space distribution of wafer etching is mapped to the laminar flow distribution map of the airflow to establish a precise correspondence between the process area and the airflow. Since different etching process areas may have different requirements for the airflow, such as airflow speed, direction, etc., this mapping relationship ensures a high degree of fit between the process and the airflow, thereby ensuring that the airflow demand of each process area is specifically controlled and optimized, ensuring the effectiveness of pollutant emissions and airflow purification in these key areas, thereby improving the quality of the etching process. Read the process emission requirements and airflow control parameters, and through the process Based on the analysis of the pollution discharge requirements of the process area, the airflow parameters can be adjusted to make the airflow speed, direction, exhaust volume and other parameters meet the pollution discharge and cleanliness requirements; according to the real-time reading of the airflow control parameters, the streamline data can be dynamically adjusted to ensure that the airflow is always in the best state during the entire etching process, reducing the accumulation of pollutants and the problem of poor discharge; the streamline data is matched with the process pollution discharge requirements, the airflow deviation value is calculated, and the airflow control parameters are adjusted. By comparing the process pollution discharge requirements and the actual airflow status, the deviations in airflow speed, direction, pressure, etc. can be quickly identified, and the control parameters can be adjusted in real time to ensure that the airflow is in the best state at any time. By continuously optimizing the airflow control parameters, the cleanliness requirements of the airflow for the process area are ensured, any local accumulation of pollutants or airflow out of control is avoided, and the efficiency of the wafer etching process and product quality are significantly improved.

[0007] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 A schematic flow chart of an ultra-clean control method for a wafer etching environment provided in an embodiment of the present application; Figure 2 A schematic diagram of the structure of an ultra-clean control system for a wafer etching environment provided in an embodiment of the present application.

[0009] Description of reference numerals: laminar flow distribution map constructing unit 10 , mapping relationship establishing unit 20 , matching streamline data determining unit 30 , airflow control parameter parsing unit 40 . DETAILED DESCRIPTION

[0010] The embodiments of the present application provide an ultra-clean control method and control system for a wafer etching environment, thereby solving the problem that the airflow control in the prior art is mostly statically set, cannot dynamically adjust the airflow according to real-time process requirements and environmental changes, and cannot meet the personalized requirements of different areas for airflow, resulting in poor accuracy of airflow control, which in turn leads to poor reliability of the etching process and poor product quality.

[0011] After introducing the basic principles of the present application, various non-limiting implementation methods of the present application will be specifically introduced below in conjunction with the accompanying drawings of the specification. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0012] Embodiment 1, as Figure 1 As shown, an embodiment of the present application provides an ultra-clean control method for a wafer etching environment, the method comprising: The control module is connected to obtain the laminar flow distribution of the ultra-clean space, construct a laminar flow distribution map, and fit the streamline trajectory to the laminar flow distribution map, where the streamline is used to describe the airflow speed, direction and distribution. The faster the airflow speed, the denser the streamline, the boundary width of the streamline distribution represents the airflow distribution, and the arrow represents the airflow direction.

[0013] In high-cleanliness areas, laminar flow design is usually adopted. The airflow flows in a single direction and at a stable speed to remove particulate matter from the working area. Vertical laminar flow can quickly discharge pollutants to prevent them from being deposited on sensitive equipment or products. First, in the ultra-clean space, wind speed sensor monitoring equipment and other real-time airflow data are collected, including airflow speed, airflow direction, airflow distribution, etc. The airflow data is mapped in three-dimensional space according to its actual position to generate a laminar distribution model. Graphic tools are used to visualize the laminar distribution model and generate a three-dimensional airflow distribution map to observe the airflow distribution status in real time.

[0014] Streamlines describe the trajectory of airflow at a certain moment. In a laminar flow environment, streamlines represent the flow direction and path of gas molecules. The faster the airflow speed, the denser the streamlines, indicating that the airflow is active in the area. Specifically, the speed of the airflow is proportional to the density of the streamlines, that is, the denser the streamlines, the faster the airflow speed, and vice versa. The width of the distribution boundary of the streamlines represents the distribution range of the airflow in different areas, and the impact area of ​​the airflow can be analyzed through numerical calculation. The arrows on the streamlines indicate the flow direction of the airflow, that is, from which area the gas flows to which area.

[0015] Based on the existing laminar distribution data, the streamline trajectory is fitted through a mathematical model. For example, the finite element method is used to simulate the movement of airflow in three-dimensional space. By fitting the streamline trajectory, the specific flow conditions of the airflow in the entire space are obtained, and these streamlines are superimposed on the constructed laminar distribution map to obtain a complete airflow model.

[0016] The process space distribution of wafer etching is obtained, coordinate mapping is performed according to the position coordinates of the process space distribution and the laminar flow distribution map, and a mapping relationship between the wafer etching process and the laminar flow distribution is established.

[0017] Process space distribution refers to the distribution of various process steps, such as reaction area, deposition area, etching area, etc., in the actual physical space during wafer etching. Each process area has specific requirements for airflow, mainly to ensure the emission of pollutants, the purification effect of airflow, and the accuracy of the process. First, according to the specific process of wafer etching, the position of different process areas in physical space is determined, and the spatial positions of different process areas are marked. For example, a three-dimensional coordinate system, such as X, Y, and Z axes, is established to accurately locate these process areas. Relevant measuring equipment, such as laser depth meter, is used to determine the specific spatial boundaries of each process area, generate process space distribution, and ensure that the coordinates of each area can be accurately mapped to the overall space.

[0018] The coordinate information of the airflow distribution area is obtained according to the laminar distribution map, and the coordinates of the process space distribution are corresponded to the coordinates in the laminar distribution map to establish a mapping relationship between the wafer etching process and the laminar distribution. For example, if the etching area is located at a certain position in the space, it is necessary to obtain the airflow data of that position. Through this mapping, it can be ensured that the airflow can be controlled according to the process requirements in the actual etching area.

[0019] The control module reads the process pollution removal requirements and airflow control parameters of wafer etching, uses the airflow control parameters to perform streamline fitting of each laminar flow in the laminar flow distribution diagram, and determines matching streamline data of the wafer etching process area based on the mapping relationship.

[0020] The control module is used to read the process pollution emission requirements and airflow control parameters of wafer etching. The process pollution emission requirements refer to the need to effectively remove pollutants generated during the wafer etching process through the airflow system in order to maintain the cleanliness and stability of the process environment. Pollution emission requirements may include the emission of debris generated during the etching process, as well as the dust cleanliness requirements in the air; airflow control parameters refer to various indicators for controlling the airflow, such as airflow speed, direction, exhaust volume, pressure, etc. The airflow control parameters need to be adjusted according to the process pollution emission requirements to ensure that the airflow characteristics meet the process requirements. For example, particulate matter and chemical by-products will be generated during the etching process. The particle diameter ranges from 50nm to 100nm, and the corresponding airflow velocity needs to be at least 0.5m / s to ensure that the pollutants can be effectively carried away. Streamline fitting is performed. Specifically, an airflow simulation model is established using fluid mechanics simulation software. The model input parameters are airflow control parameters, including airflow speed, direction, exhaust volume, pressure, etc. The flow of airflow in the ultra-clean space is simulated by numerical calculation methods, such as the finite element method, and the streamlines generated in the simulation results are fitted and adjusted with the existing streamlines in the laminar distribution map to ensure that they meet the current etching process. After the fitting is completed, the coordinate mapping relationship between the process area and the laminar distribution map is used to project the streamline data into the three-dimensional space of the process area, and matching streamline data matching the wafer etching process area is generated, so that the actual movement trajectory of the airflow in each process area can be determined.

[0021] The matching streamline data is matched with the process pollution discharge requirement to determine the airflow deviation value, and the airflow control parameter is analyzed according to the airflow deviation value to obtain the adjustment control parameter, and the adjustment control parameter is used to adjust the airflow control parameter to meet the streamline data requirement of the process pollution discharge requirement.

[0022] The speed, direction, exhaust volume and pressure distribution of the airflow are extracted from the fitted matching streamline data. The extracted streamline data are compared with the process sewage discharge requirements one by one to determine whether the actual airflow characteristics meet the process requirements. For the parts that do not meet the requirements, the difference between the actual data and the required data is calculated to obtain the airflow deviation value, including airflow speed deviation, direction deviation, exhaust volume deviation and pressure deviation.

[0023] Each airflow deviation value is analyzed separately to determine its adjustment direction, such as increase or decrease, and the deviation of the airflow is associated with the parameters in the control system. For example, the airflow speed deviation can be adjusted by adjusting the speed of the fan or adjusting the opening of the valve; the airflow direction deviation can be corrected by adjusting the direction of the air outlet or changing the air duct design. According to the response relationship between the deviation value and the control system, the adjustment control parameters are generated, including fan speed, valve opening, air duct configuration, etc.

[0024] For example, the actual air velocity in a process area is 0.35m / s, while the air velocity requirement is 0.5m / s, so the deviation value is -0.15m / s; the actual exhaust volume is 40 cubic meters / hour, while the exhaust volume requirement is 50 cubic meters / hour, so the deviation value is -10 cubic meters / hour; the actual pressure is 8Pa, while the target pressure is 10Pa, so the deviation value is -2Pa. By calculating the deviation value, the airflow adjustment strategy is determined. For example, by increasing the fan speed, the airflow velocity is increased from 0.35m / s to 0.5m / s, and the opening is increased to ensure that the exhaust volume reaches 50 cubic meters / hour and the pressure reaches 10Pa, and finally the adjustment control parameters that meet the requirements are generated.

[0025] According to the analyzed adjustment control parameters, the relevant airflow control equipment is automatically adjusted so that the airflow system can meet the process pollution discharge requirements in the next working cycle, ultimately ensuring the quality of the wafer etching process.

[0026] Furthermore, the coordinate mapping of the position coordinates according to the process space distribution with the laminar flow distribution map to establish a mapping relationship between the wafer etching process and the laminar flow distribution includes: Acquire the three-dimensional coordinates of the laminar flow distribution map; determine multiple points in the area according to the process area of ​​wafer etching, establish mapping points, and the mapping points have spatial position coordinates; use the spatial position coordinates of the mapping points to project them into the three-dimensional coordinates of the laminar flow distribution map, determine the matching flow layer path, and establish a mapping relationship between the matching flow layer path and the process area.

[0027] The laminar flow distribution diagram is a three-dimensional graphic model that has been obtained to display the airflow distribution state. A three-dimensional coordinate system is established in the model, such as the X, Y, and Z axes, and the position, speed, and direction of the airflow in space are displayed through the three-dimensional coordinate system to indicate the position of the airflow in space.

[0028] Mapping points are key spatial points selected in the process area for matching with the airflow distribution diagram. First, the process area of ​​the entire wafer etching is divided to ensure that each area has a representative mapping point. Multiple key points are selected in each process area as mapping points. These points can be the center points or boundary points of the area. The specific selection depends on the sensitivity of the process. Each mapping point has its three-dimensional coordinates in the process space, and these coordinates are used to correspond to the laminar flow distribution diagram.

[0029] The coordinates of the mapping points in the process area are converted to the three-dimensional coordinate system of the laminar flow distribution map. This conversion can be completed through geometric mapping or numerical interpolation methods to ensure that the corresponding positions of the mapping points in the airflow distribution map are accurate. Through the projected coordinates, the streamline trajectory of the airflow at the mapping point, that is, the movement path of the airflow, is found. These streamlines represent the actual movement of the airflow in the process area.

[0030] The flow layer path is the path along which the airflow flows along a specific trajectory in the laminar flow distribution map. After the projection is completed, determine which flow layer paths match the mapping points of the process area. In some cases, the mapping point may correspond to a specific flow layer path, which means that the airflow at this position has a unique trajectory in the process area; in other cases, the mapping point may cover multiple flow layer paths, and the airflow may have multiple flow paths in the process area. It is necessary to determine the influence of each path by calculating the proportion weight; in some cases, there are multiple process areas where the mapping points correspond to the same flow layer path. In this case, it is necessary to balance the airflow requirements of different areas through process demand analysis. According to the correspondence between the mapping point and the flow layer path, the matching flow layer path is determined, and then the mapping relationship between the matching flow layer path and the process area is established.

[0031] Furthermore, the step of determining a plurality of points in a region according to a process region of wafer etching and establishing mapping points includes: Determine the process sensitivity of the process area, wherein the process sensitivity describes the degree of influence of the process flow on the wafer etching quality; configure the grid division unit according to the process sensitivity, wherein the higher the process sensitivity, the smaller the grid division unit; use the grid division unit to divide the process area, and set the center point of each grid unit as the mapping point.

[0032] Determine the process sensitivity of the process area. Process sensitivity is the sensitivity of a specific process area to airflow control and other parameters, that is, the sensitivity of certain areas of the process to how changes in airflow affect the etching quality. Different process areas may have different requirements for airflow, so it is necessary to determine their sensitivity based on the characteristics of these areas. For example, during the etching process, some areas may be very sensitive to changes in airflow speed, direction, pressure, etc. Any slight change will affect the etching quality of the wafer. For example, in a specific etching step, airflow speed fluctuations may cause uneven etching. By analyzing previous experimental data, the etching effects of different process areas can be calculated, the impact of airflow fluctuations on etching quality can be evaluated, and the process sensitivity of each process area can be generated.

[0033] The process area is divided into uniform grids according to the process sensitivity. Grids of different sizes are used according to the process sensitivity. Small grids are used in high-sensitivity areas to accurately monitor the airflow state of each tiny position; large grids are used in low-sensitivity areas to save computing resources.

[0034] According to the grid division results, the area is divided into multiple grid units, each unit represents a part of the area, and a mapping point is set at the geometric center of each grid unit. The three-dimensional coordinates of the mapping point are used to map with the three-dimensional coordinates in the laminar distribution map to monitor the changes in airflow.

[0035] Furthermore, configuring the grid division unit according to the process sensitivity includes: The process sensitivity is normalized so that the sensitivity of each process area is converted to between 0 and 1; according to the preset rules: , the grid division unit is obtained by calculating the normalized sensitivity value of the process area ,in is the preset maximum grid size, the maximum grid unit corresponding to the lowest sensitivity area, and S is the normalized sensitivity value of the process area.

[0036] The purpose of normalization is to standardize the sensitivity values ​​of different process areas so that a unified scale can be used for processing in subsequent calculations. After normalization, all process area sensitivity values ​​are converted to a fixed range, that is, between 0 and 1, where 1 represents the highest sensitivity of the process area to airflow, and 0 represents the lowest sensitivity of the process area to airflow. The minimum-maximum normalization method can be used, and the formula is as follows: ,in, is the sensitivity normalized value, is the original process sensitivity value, is the maximum sensitivity value in all process areas, It is the smallest sensitivity value among all process areas.

[0037] After normalization, the grid division unit is calculated according to the following formula : ,in, It is the preset maximum grid size, used in the area with the lowest sensitivity. It indicates the maximum grid unit size allowed in the area with the lowest sensitivity. The design of is to reflect the inverse relationship between process sensitivity and grid size, that is, the higher the sensitivity, the finer the grid division. Specifically, first determine the maximum grid division unit ,For example, It can be 10 mm, which means that in the low sensitivity area, the maximum grid unit can be 10 mm. After normalizing the sensitivity of each process area, a value is obtained. , and then substitute into the formula , calculate the grid division unit of each area.

[0038] Furthermore, the spatial position coordinates of the mapping points are projected into the three-dimensional coordinates of the laminar flow distribution map to determine the matching flow layer path, including: Obtain the projection ratio relationship between the spatial position coordinates and the flow layer path, determine the matching flow layer path according to the projection ratio relationship, and the matching flow layer path includes one-to-one, one-to-many, and many-to-one; when the matching flow layer path is one-to-one, establish a one-to-one mapping relationship; when the matching flow layer path is one-to-many or many-to-one, establish a one-to-many or many-to-one mapping relationship, and configure the ratio weight, the ratio weight corresponds to the projection ratio relationship.

[0039] The spatial position coordinates are the three-dimensional coordinates of the mapping point. The flow layer pathway is the flow path of the airflow through a certain area in the laminar flow distribution map. The projection ratio relationship refers to the degree of spatial overlap between the mapping point of the process area and the airflow flow layer pathway. The position coordinates of each mapping point are projected onto the flow layer distribution map to find its corresponding flow layer pathway. The projection ratio of each mapping point and the corresponding flow layer pathway is calculated through the area or volume of spatial overlap. For example, if the overlapping area between a mapping point and a flow layer pathway is large, then the influence of the pathway on the process area is relatively high. Matching flow layer pathways includes one-to-one, one-to-many, and many-to-one.

[0040] If the spatial position of a mapping point has the highest projection ratio with a flow layer path, and only this flow layer path has a significant impact on the point, it is determined to be a one-to-one mapping relationship. In this case, the association relationship between the mapping point and the flow layer path is directly established, which means that the airflow demand of the process area is completely provided by this flow layer path.

[0041] One-to-many mapping relationship means that a certain mapping point is affected by multiple flow layer paths, which means that in this area, the airflow may come from different flow layer paths, which may cause airflow mixing. In this case, first determine the influence ratio of each path on the area based on the projection ratio relationship between each flow layer path and the mapping point, and assign a weight value to each flow layer path according to the size of the projection ratio. The larger the weight value, the greater the influence of the flow layer path on the process area. According to the calculated weight value, establish the mapping relationship between the mapping point and multiple flow layer paths.

[0042] Many-to-one mapping relationship means that the mapping points of multiple process areas are affected by the same flow layer channel, which means that the flow layer channel plays the role of airflow supply for multiple process areas. In this case, according to the projection proportion of each mapping point, the airflow influence weight of the flow layer channel on each process area is allocated, and the mapping relationship between multiple mapping points and the flow layer channel is established according to the calculated weight value.

[0043] Furthermore, the matching streamline data is matched with the process blowdown requirement to determine the airflow deviation value, including: According to the process pollution discharge requirements, the airflow parameter requirements are determined, and the airflow parameters include airflow velocity, direction, exhaust volume, and target pressure; according to the matching streamline data, the airflow velocity, direction, exhaust volume and airflow distribution are obtained, and the pressure distribution is obtained according to the airflow velocity and airflow distribution; the airflow velocity, direction, exhaust volume, target pressure in the airflow parameter requirements are respectively used with the airflow velocity, direction, exhaust volume, and pressure distribution of the matching streamline data to calculate the difference values ​​and determine the airflow deviation value.

[0044] Process pollution removal requirements refer to the need to effectively remove pollutants generated during the wafer etching process through the airflow system in order to maintain the cleanliness and stability of the process environment. Pollution removal requirements can include the discharge of debris generated during the etching process and the cleanliness requirements of dust in the air. According to the process pollution removal requirements, the airflow parameter requirements are determined, including airflow speed, direction, exhaust volume, and target pressure. For airflow speed, it is necessary to ensure that the airflow speed is fast enough to take debris and dust out of the process area in time; for airflow direction, the airflow needs to flow in a specific direction to ensure that pollutants do not flow back into the process area; for exhaust volume, the exhaust volume of the airflow system needs to meet the pollution removal requirements of the entire process area to ensure sufficient air circulation; for target pressure, in order to ensure smooth airflow, the process area usually needs to maintain a certain pressure difference, and the target pressure is the pressure difference between the process area and the surrounding environment.

[0045] According to the matching streamline data, the airflow velocity, direction, exhaust volume and airflow distribution are obtained. The airflow velocity is the actual airflow velocity distribution in each process area; the direction is the actual flow direction of the airflow in each process area; the streamline data combined with the distribution of the flow layer path can calculate the actual exhaust volume of each area; the airflow distribution is the overall distribution of the airflow in space, including the changes in airflow velocity and direction. According to the airflow velocity and airflow distribution, the pressure distribution of each process area can be calculated using the principles of fluid mechanics such as the Bernoulli equation. The Bernoulli equation is: , where c is a constant, is the air density and v is the air velocity.

[0046] Compare the matching streamline data with the airflow parameter requirements to determine whether the following conditions are met: whether the airflow speed meets the sewage discharge requirements to ensure that the airflow is fast enough to carry away pollutants; whether the airflow direction is toward the exhaust port to avoid airflow backflow or pollutant retention; whether the airflow pressure meets the sewage discharge requirements to ensure that the airflow in the area will not be turbulent or retained. The difference value calculation formula is as follows: ; ; ,in, , , are respectively the difference in airflow velocity, direction, and pressure. , , They are the airflow velocity, direction, and target pressure in the airflow parameter requirements. , , They are respectively the airflow velocity, direction, and pressure of the matching streamline data. If the calculated airflow velocity difference value, direction difference value, and pressure difference value are within the preset threshold range, it is determined to be a match; otherwise, it is determined to be a mismatch.

[0047] Furthermore, the airflow control parameter is parsed according to the airflow deviation value to obtain the adjustment control parameter, including: The abnormal process area is located according to the airflow deviation value, and a streamline trajectory search is performed based on the laminar flow distribution map with the abnormal process area as the starting point to obtain a deviation streamline trajectory, which has a cross-flow layer mark; according to the cross-flow layer mark, the target airflow control parameter of the abnormal adjustment is matched, and at the same time, according to the cross-flow layer mark, the cross-impact process area is identified through the laminar flow distribution map, and the influence parameters and influence coefficients of the target airflow control parameters on the cross-impact process area are obtained; according to the deviation streamline trajectory and the mapping relationship between the wafer etching process and the laminar flow distribution, the neighboring process area is identified in the laminar flow distribution map, and the streamline trajectory of the neighboring process area is searched, which has an overlapping influence flow layer or an adjacent influence area mark; based on the overlapping influence flow layer or the adjacent influence area mark, the influence parameters of the abnormal process area and the neighboring process area are identified. number and its influence coefficient; establish the first objective function of the abnormal process area with the target airflow control parameter, establish the second objective function of the cross-impact process area and the third objective function of the neighborhood process area with the influence parameters of the cross-impact process area and the neighborhood process area and their influence coefficients respectively, and determine the adjustment allocation weight according to the process sensitivity of the abnormal process area, the cross-impact process area and the neighborhood process area, and use the adjustment allocation weight to fuse the first objective function, the second objective function and the third objective function to determine the fusion objective function; with the maximization of the adjustment of the airflow deviation value and the minimization of the influence of the neighborhood process area as the goal, perform global optimization through the fusion objective function to obtain the adjustment control parameter, and the adjustment control parameter is a control parameter adjustment strategy with the maximum calculation result of the fusion objective function.

[0048] The abnormal process area is located according to the airflow deviation value. Specifically, if the calculated airflow velocity difference value, direction difference value, and pressure difference value are all within the preset threshold range, it is determined to be a match; otherwise it is determined to be a mismatch. In this case, it is marked as an abnormal process area.

[0049] Starting from the abnormal process area, search for the flow trajectory of the airflow. According to the streamline data of the laminar distribution map, track the flow path of the airflow from the starting point, that is, the abnormal process area, to other areas. This can be done through numerical simulation or streamline fitting tools. By comparing with the normal streamline trajectory, determine which streamlines have deviated or are abnormal, and obtain the deviation streamline trajectory based on the comparison results.

[0050] During the streamline trajectory search, some cross-flow layer areas are obtained. Cross-flow layers refer to areas where airflows interfere and intersect with each other in space. This situation may cause changes in airflow speed and direction, and then cause anomalies. These cross-flow layer areas are marked through laminar distribution maps, so that the airflow interference phenomenon in these areas can be identified in subsequent analysis.

[0051] By analyzing the cross-flow layer area, the airflow problems in the abnormal process area can be identified, and then the corresponding airflow control parameters can be adjusted. For example, if the airflow velocity is low, the fan speed can be increased or the area of ​​the airflow inlet can be expanded. If the airflow direction is incorrect, the direction of the airflow guide device can be adjusted. The parameters that are most effective for airflow adjustment can be selected for optimization to ensure that the airflow in the abnormal area returns to normal.

[0052] When adjusting the airflow control parameters, the change in airflow will not only affect the abnormal area, but may also have a cross-impact on the adjacent process areas. Therefore, before adjusting the airflow, it is necessary to evaluate these cross-impacts. Specifically, the laminar flow distribution diagram is used to analyze the impact of airflow adjustments in the cross-flow layer area on the airflow distribution in other process areas, and these affected areas are identified as cross-impact process areas.

[0053] For each identified cross-impact process area, determine the degree of influence of the airflow adjustment on these areas, including influencing parameters and influence coefficients, which are used to quantitatively describe the influence of the airflow adjustment on other process areas. The influencing parameters include airflow velocity, direction, exhaust volume and pressure, etc. These parameters indicate how the airflow in the cross-impact area changes after the airflow adjustment. The influence coefficient is a quantitative value used to measure the impact of the airflow adjustment in a region. For example, the influence coefficient can reflect the degree of influence on the airflow velocity in the adjacent area after adjusting the fan speed. The larger the coefficient, the more significant the impact of the adjustment on the area.

[0054] According to the deviation streamline trajectory and the mapping relationship between the wafer etching process and the laminar flow distribution, it is possible to extend from the abnormal area to other neighboring process areas that may be affected. The neighboring process area refers to the area adjacent to the abnormal area or the area where the airflow affects each other. In these areas, the airflow adjustment or abnormality may affect the adjacent process area, thereby affecting the airflow balance of the entire system. The neighboring process area usually refers to the area adjacent to the abnormal process area in physical space. The spatial distance in the three-dimensional coordinate system can be used to determine which areas are located in the vicinity of the abnormal area; or, through streamline trajectory analysis, the flow path of the airflow between the abnormal area and other areas can be determined. If the airflow in the abnormal area overlaps with the airflow path of a neighboring area, then the area is regarded as a neighboring process area.

[0055] Search for the movement trajectory of the airflow in the neighborhood area, focusing on those streamlines that interact with the airflow trajectory of the abnormal area. Through these streamlines, it can be determined whether the airflow adjustment in the abnormal area will affect the neighborhood area. The overlapping influence flow layer and adjacent influence area are marked according to the search results. The overlapping influence flow layer is the flow layer where the airflow crosses or overlaps between different process areas. When the airflow changes in one area, it may affect the airflow distribution in other areas. Although the adjacent influence area does not have direct overlapping airflow, it is indirectly affected by the change of airflow in the adjacent area due to the proximity of the airflow.

[0056] By marking the overlapping influencing flow layers and adjacent influencing areas, the airflow states in these areas are further analyzed, and the specific impact of the airflow adjustment in the abnormal process area and the neighboring process area is quantified. Specifically, through numerical simulation or simulation calculation, based on the streamline trajectory analysis of the overlapping or adjacent areas, the specific impact of the airflow adjustment on each area is obtained, including calculating the specific numerical changes in the airflow velocity, direction, exhaust volume and pressure in different process areas to obtain the influencing parameters; using the streamline trajectory and laminar distribution diagram, the degree of influence of the airflow adjustment in the abnormal area on the neighboring area is calculated through the overlapping area or volume of the airflow, such as calculating the ratio of the pressure change in the field process area to the pressure change in the abnormal area, and calculating the influence coefficient.

[0057] The target airflow control parameters include airflow velocity, direction, exhaust volume and pressure. The first objective function is established based on these parameters to describe the optimization goal of airflow control in the abnormal area. It is usually in the form of minimizing airflow deviation or maximizing airflow control effect. The objective function is established based on the airflow control requirements of the abnormal area, such as reducing airflow deviation or improving airflow purification capacity. The goal of this objective function is to make the airflow state in the abnormal process area as close to the process requirements as possible by adjusting the airflow control parameters.

[0058] The second objective function of the cross-influence process area is established based on the influencing parameters and influence coefficients of the cross-influence process area. The objective function of the cross-influence area needs to minimize the adverse effects of the airflow adjustment in the abnormal area on these areas, while trying to maintain the airflow adjustment effect. The purpose of the established objective function is to minimize the negative impact on the cross-area while adjusting the airflow in the abnormal area.

[0059] The third objective function of the neighborhood process area is established with the influencing parameters and their influencing coefficients. The objective function of the neighborhood process area is similar to that of the intersection area, and the goal is to minimize the interference of airflow adjustment on these areas.

[0060] According to the process sensitivity of abnormal process areas, cross-affected process areas, and neighboring process areas, the adjustment allocation weights are determined. Among them, high-sensitivity areas require higher weights because airflow changes have a great impact on the process, and the airflow requirements of these areas must be guaranteed first; low-sensitivity areas can be given lower weights because these areas have a higher tolerance for airflow adjustments. According to the adjustment allocation weights, the first objective function, the second objective function, and the third objective function are fused in a weighted manner to form a comprehensive fusion objective function, so that the airflow status of abnormal areas and other affected areas can be considered simultaneously during the overall optimization.

[0061] The airflow deviation value reflects the difference between the actual airflow parameters and the process requirements. Maximizing the adjustment means minimizing these deviations by adjusting the airflow control parameters so that the airflow parameters are more in line with the process requirements. In addition to the abnormal process area, it is necessary to ensure that the impact of the airflow adjustment on the adjacent process area should be minimized, that is, the airflow state in the adjacent area should not deviate significantly due to the adjustment of the airflow in the abnormal area.

[0062] The two objectives of maximizing the adjustment of airflow deviation and minimizing the influence of the neighboring process area are combined. Based on the fusion objective function, a global optimization method is used to find an airflow control parameter adjustment strategy that meets the above two objectives and can maximize the fusion objective function. For example, the initial values ​​of the airflow control parameters are set, such as fan speed, valve opening, flow control, etc., and the airflow control parameters are updated through an iterative search in the parameter space through a global optimization algorithm to maximize the fusion objective function. After each iterative update, a new fusion objective function value is calculated. When the fusion objective function reaches the maximum value or meets the preset convergence conditions, the optimization is terminated. The airflow control parameters finally obtained are the optimal control parameter adjustment strategy.

[0063] In summary, the ultra-clean control method for a wafer etching environment provided in the embodiment of the present application has the following technical effects: The laminar flow distribution of the ultra-clean space is obtained, a laminar flow distribution map is constructed, and the streamline trajectory is fitted. The streamline fitting not only describes the speed, direction and other parameters of the airflow, but also clearly indicates the boundary and flow direction of the airflow, which makes the airflow state of the entire ultra-clean space more controllable and avoids the formation of turbulence and dead corners. The process space distribution of wafer etching is mapped to the laminar flow distribution map of the airflow to establish a precise correspondence between the process area and the airflow. Since different etching process areas may have different requirements for the airflow, such as airflow speed, direction, etc., this mapping relationship ensures a high degree of fit between the process and the airflow, thereby ensuring that the airflow demand of each process area is specifically controlled and optimized, ensuring the effectiveness of pollutant emissions and airflow purification in these key areas, thereby improving the quality of the etching process. Read the process emission requirements and airflow control parameters, and through the process Based on the analysis of the pollution discharge requirements of the process area, the airflow parameters can be adjusted to make the airflow speed, direction, exhaust volume and other parameters meet the pollution discharge and cleanliness requirements; according to the real-time reading of the airflow control parameters, the streamline data can be dynamically adjusted to ensure that the airflow is always in the best state during the entire etching process, reducing the accumulation of pollutants and the problem of poor discharge; the streamline data is matched with the process pollution discharge requirements, the airflow deviation value is calculated, and the airflow control parameters are adjusted. By comparing the process pollution discharge requirements and the actual airflow status, the deviations in airflow speed, direction, pressure, etc. can be quickly identified, and the control parameters can be adjusted in real time to ensure that the airflow is in the best state at any time. By continuously optimizing the airflow control parameters, the cleanliness requirements of the airflow for the process area are ensured, any local accumulation of pollutants or airflow out of control is avoided, and the efficiency of the wafer etching process and product quality are significantly improved.

[0064] Embodiment 2, based on the same inventive concept as the ultra-clean control method of a wafer etching environment in the above embodiment, Figure 2 As shown, an embodiment of the present application provides an ultra-clean control system for a wafer etching environment, the system comprising: A laminar flow distribution map construction unit 10, the laminar flow distribution map construction unit 10 is used to connect to the control module to obtain the laminar flow distribution of the ultra-clean space, construct a laminar flow distribution map, and fit streamline trajectories to the laminar flow distribution map, wherein streamlines are used to describe airflow speed, direction and distribution, the faster the airflow speed, the denser the streamlines, the boundary width of the streamline distribution represents the airflow distribution, and the arrow represents the airflow direction; a mapping relationship establishment unit 20, the mapping relationship establishment unit 20 is used to obtain the process space distribution of wafer etching, coordinate mapping is performed according to the position coordinates of the process space distribution and the laminar flow distribution map, and a mapping relationship between the wafer etching process and the laminar flow distribution is established; a matching streamline data determination unit 30, the matching streamline data determination unit 30 The flow line data determination unit 30 is used to read the process pollution removal requirements and airflow control parameters of wafer etching through the control module, and use the airflow control parameters to perform streamline fitting of each laminar flow in the laminar distribution diagram, and determine the matching streamline data of the wafer etching process area according to the mapping relationship; the airflow control parameter parsing unit 40, the airflow control parameter parsing unit 40 is used to use the matching streamline data to match the process pollution removal requirements, determine the airflow deviation value, and perform the airflow control parameter parsing according to the airflow deviation value to obtain the adjustment control parameters, and the adjustment control parameters are used to adjust the airflow control parameters to meet the streamline data requirements of the process pollution removal requirements.

[0065] Furthermore, the system further includes a mapping relationship acquisition unit to perform the following operation steps: Acquire the three-dimensional coordinates of the laminar flow distribution map; determine multiple points in the area according to the process area of ​​wafer etching, establish mapping points, and the mapping points have spatial position coordinates; use the spatial position coordinates of the mapping points to project them into the three-dimensional coordinates of the laminar flow distribution map, determine the matching flow layer path, and establish a mapping relationship between the matching flow layer path and the process area.

[0066] Furthermore, the system further comprises a mapping point acquisition unit to perform the following operation steps: Determine the process sensitivity of the process area, wherein the process sensitivity describes the degree of influence of the process flow on the wafer etching quality; configure the grid division unit according to the process sensitivity, wherein the higher the process sensitivity, the smaller the grid division unit; use the grid division unit to divide the process area, and set the center point of each grid unit as the mapping point.

[0067] Furthermore, the system further includes a normalization processing unit to perform the following operation steps: The process sensitivity is normalized so that the sensitivity of each process area is converted to between 0 and 1; according to the preset rules: , the grid division unit is obtained by calculating the normalized sensitivity value of the process area ,in is the preset maximum grid size, the maximum grid unit corresponding to the lowest sensitivity area, and S is the normalized sensitivity value of the process area.

[0068] Furthermore, the system further includes a weight configuration unit to perform the following operation steps: Obtain the projection ratio relationship between the spatial position coordinates and the flow layer path, determine the matching flow layer path according to the projection ratio relationship, and the matching flow layer path includes one-to-one, one-to-many, and many-to-one; when the matching flow layer path is one-to-one, establish a one-to-one mapping relationship; when the matching flow layer path is one-to-many or many-to-one, establish a one-to-many or many-to-one mapping relationship, and configure the ratio weight, the ratio weight corresponds to the projection ratio relationship.

[0069] Furthermore, the system further comprises an airflow deviation value determining unit to perform the following operation steps: According to the process pollution discharge requirements, the airflow parameter requirements are determined, and the airflow parameters include airflow velocity, direction, exhaust volume, and target pressure; according to the matching streamline data, the airflow velocity, direction, exhaust volume and airflow distribution are obtained, and the pressure distribution is obtained according to the airflow velocity and airflow distribution; the airflow velocity, direction, exhaust volume, target pressure in the airflow parameter requirements are respectively used with the airflow velocity, direction, exhaust volume, and pressure distribution of the matching streamline data to calculate the difference values ​​and determine the airflow deviation value.

[0070] Furthermore, the system further includes an adjustment control parameter acquisition unit to perform the following operation steps: The abnormal process area is located according to the airflow deviation value, and a streamline trajectory search is performed based on the laminar flow distribution map with the abnormal process area as the starting point to obtain a deviation streamline trajectory, which has a cross-flow layer mark; according to the cross-flow layer mark, the target airflow control parameter of the abnormal adjustment is matched, and at the same time, according to the cross-flow layer mark, the cross-impact process area is identified through the laminar flow distribution map, and the influence parameters and influence coefficients of the target airflow control parameters on the cross-impact process area are obtained; according to the deviation streamline trajectory and the mapping relationship between the wafer etching process and the laminar flow distribution, the neighboring process area is identified in the laminar flow distribution map, and the streamline trajectory of the neighboring process area is searched, which has an overlapping influence flow layer or an adjacent influence area mark; based on the overlapping influence flow layer or the adjacent influence area mark, the influence parameters of the abnormal process area and the neighboring process area are identified. number and its influence coefficient; establish the first objective function of the abnormal process area with the target airflow control parameter, establish the second objective function of the cross-impact process area and the third objective function of the neighborhood process area with the influence parameters of the cross-impact process area and the neighborhood process area and their influence coefficients respectively, and determine the adjustment allocation weight according to the process sensitivity of the abnormal process area, the cross-impact process area and the neighborhood process area, and use the adjustment allocation weight to fuse the first objective function, the second objective function and the third objective function to determine the fusion objective function; with the maximization of the adjustment of the airflow deviation value and the minimization of the influence of the neighborhood process area as the goal, perform global optimization through the fusion objective function to obtain the adjustment control parameter, and the adjustment control parameter is a control parameter adjustment strategy with the maximum calculation result of the fusion objective function.

[0071] Through the above-mentioned detailed description of the ultra-clean control method of a wafer etching environment in this specification, those skilled in the art can clearly understand the ultra-clean control system of a wafer etching environment in this embodiment. Since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description.

[0072] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for ultra-clean control of a wafer etching environment, characterized in that: The method comprises: Connecting the control module to obtain the laminar flow distribution of the ultra-clean space, constructing a laminar flow distribution map, and fitting streamline trajectories to the laminar flow distribution map, wherein streamlines are used to describe airflow speed, direction, and distribution. The faster the airflow speed, the denser the streamlines. The boundary width of the streamline distribution represents the airflow distribution, and the arrow represents the airflow direction. Obtaining the process space distribution of wafer etching, performing coordinate mapping with the laminar flow distribution map according to the position coordinates of the process space distribution, and establishing a mapping relationship between the wafer etching process and the laminar flow distribution; The control module reads the process exhaust requirements and airflow control parameters of wafer etching, uses the airflow control parameters to perform streamline fitting of each laminar flow in the laminar flow distribution diagram, and determines matching streamline data of the wafer etching process area according to the mapping relationship; The matching streamline data is matched with the process pollution discharge requirement to determine the airflow deviation value, and the airflow control parameter is analyzed according to the airflow deviation value to obtain the adjustment control parameter, and the adjustment control parameter is used to adjust the airflow control parameter to meet the streamline data requirement of the process pollution discharge requirement.

2. The ultra-clean control method for wafer etching environment according to claim 1, characterized in that: The coordinate mapping of the position coordinates according to the process space distribution with the laminar flow distribution map to establish a mapping relationship between the wafer etching process and the laminar flow distribution includes: Obtain the three-dimensional coordinates of the laminar flow distribution map; Determine multiple points in the region according to the process region of wafer etching, and establish mapping points, wherein the mapping points have spatial position coordinates; The spatial position coordinates of the mapping points are projected into the three-dimensional coordinates of the laminar flow distribution diagram to determine a matching flow layer path, and a mapping relationship between the matching flow layer path and the process area is established.

3. The ultra-clean control method for wafer etching environment according to claim 2, characterized in that: The step of determining a plurality of points in a region according to a process region of wafer etching and establishing mapping points comprises: Determine the process sensitivity of the process area, wherein the process sensitivity describes the degree of influence of the process flow on the wafer etching quality; configuring a grid division unit according to the process sensitivity, wherein the higher the process sensitivity, the smaller the grid division unit; The process area is divided using the grid division units, and the center point of each grid unit is set as a mapping point.

4. The ultra-clean control method for wafer etching environment according to claim 3, characterized in that: The meshing units are configured according to the process sensitivity, including: Normalizing the process sensitivity so that the sensitivity of each process area is converted to between 0 and 1; According to the preset rules: , the grid division unit is obtained by calculating the normalized sensitivity value of the process area ,in is the preset maximum grid size, the maximum grid unit corresponding to the lowest sensitivity area, and S is the normalized sensitivity value of the process area.

5. The ultra-clean control method for wafer etching environment according to claim 3, characterized in that: Projecting the spatial position coordinates of the mapping points into the three-dimensional coordinates of the laminar flow distribution map to determine a matching flow layer path includes: Obtaining a projection ratio relationship between the spatial position coordinates and a flow layer path, and determining the matching flow layer path according to the projection ratio relationship, wherein the matching flow layer path includes one-to-one, one-to-many, and many-to-one; When the matching flow layer path is one-to-one, a one-to-one mapping relationship is established; When the matching flow layer path is one-to-many or many-to-one, a one-to-many or many-to-one mapping relationship is established, and a proportion weight is configured, and the proportion weight corresponds to the projection proportion relationship.

6. The ultra-clean control method for wafer etching environment according to claim 3, characterized in that: The matching streamline data is matched with the process blowdown requirement to determine the airflow deviation value, including: According to the process sewage discharge requirements, determine the air flow parameter requirements, the air flow parameters include air flow speed, direction, exhaust volume, and target pressure; According to the matching streamline data, the airflow velocity, direction, exhaust volume and airflow distribution are obtained, and the pressure distribution is calculated according to the airflow velocity and airflow distribution; The airflow deviation value is determined by respectively calculating the difference between the airflow velocity, direction, exhaust volume, target pressure in the airflow parameter requirement and the airflow velocity, direction, exhaust volume, and pressure distribution of the matching streamline data.

7. The ultra-clean control method for wafer etching environment according to claim 6, characterized in that: The airflow control parameter is parsed according to the airflow deviation value to obtain an adjustment control parameter, including: Locate the abnormal process area according to the airflow deviation value, perform streamline trajectory search based on the laminar flow distribution map with the abnormal process area as the starting point, and obtain a deviation streamline trajectory with a cross-flow layer mark; According to the cross-flow layer mark, the abnormally adjusted target airflow control parameter is matched, and at the same time, according to the cross-flow layer mark, the cross-impact process area is identified through the laminar flow distribution map, and the influence parameter and influence coefficient of the target airflow control parameter on the cross-impact process area are obtained; According to the deviation streamline trajectory and the mapping relationship between the wafer etching process and the laminar flow distribution, a neighboring process area is identified in the laminar flow distribution map, and the streamline trajectory of the neighboring process area is searched for the streamline trajectory with overlapping influencing flow layers or adjacent influencing area marks; Based on the overlapping influencing flow layers or adjacent influencing region marks, identifying influencing parameters and influencing coefficients of abnormal process regions and neighboring process regions; Establishing a first objective function of the abnormal process area with the target airflow control parameter, establishing a second objective function of the cross-impact process area and a third objective function of the neighboring process area with the influencing parameters and influencing coefficients of the cross-impact process area and the neighboring process area respectively, and determining an adjustment allocation weight according to process sensitivities of the abnormal process area, the cross-impact process area and the neighboring process area, and fusing the first objective function, the second objective function and the third objective function by using the adjustment allocation weight to determine a fused objective function; With the goal of maximizing the adjustment of the airflow deviation value and minimizing the influence of the neighboring process area, the adjustment control parameter is obtained by performing global optimization through the fusion objective function. The adjustment control parameter is a control parameter adjustment strategy that maximizes the calculation result of the fusion objective function.

8. An ultra-clean control system for a wafer etching environment, characterized in that: A method for ultra-clean control of a wafer etching environment according to any one of claims 1 to 7, the system comprising: A laminar flow distribution map construction unit, the laminar flow distribution map construction unit is used to connect to the control module to obtain the laminar flow distribution of the ultra-clean space, construct a laminar flow distribution map, and fit streamline trajectories to the laminar flow distribution map, wherein the streamlines are used to describe the airflow speed, direction and distribution, the faster the airflow speed, the denser the streamlines, the boundary width of the streamline distribution represents the airflow distribution, and the arrow represents the airflow direction; A mapping relationship establishing unit, the mapping relationship establishing unit is used to obtain the process space distribution of wafer etching, perform coordinate mapping with the laminar flow distribution map according to the position coordinates of the process space distribution, and establish a mapping relationship between the wafer etching process and the laminar flow distribution; A matching streamline data determination unit, the matching streamline data determination unit is used to read the process pollution discharge requirements and airflow control parameters of wafer etching through the control module, use the airflow control parameters to perform streamline fitting of each laminar flow in the laminar flow distribution diagram, and determine the matching streamline data of the wafer etching process area according to the mapping relationship; An airflow control parameter parsing unit, wherein the airflow control parameter parsing unit is used to match the matching streamline data with the process pollution discharge requirement, determine the airflow deviation value, perform the airflow control parameter parsing according to the airflow deviation value, and obtain the adjustment control parameter, wherein the adjustment control parameter is used to adjust the airflow control parameter to meet the streamline data requirement of the process pollution discharge requirement.

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