Preparation method of perovskite solar cell and perovskite solar cell

Abstract

The invention discloses a preparation method of a perovskite solar cell and the perovskite solar cell. The preparation method comprises the following steps: preparing an electron transport layer on a transparent conductive substrate; coating the electron transport layer with a perovskite wet film layer; the perovskite wet film layer is coated with a hole transport layer solution, annealing treatment is carried out, a hole transport layer is obtained, and the hole transport layer solution comprises an anti-solvent and an organic polymer material used for providing holes. According to the preparation method, single anti-solvent treatment on the perovskite wet film layer and single high-temperature annealing on the perovskite wet film layer are omitted, the preparation process of the perovskite solar cell is effectively simplified, and the preparation process has good repeatability.

Description

Technical Field

[0001] The invention relates to a preparation method of a perovskite solar cell and a perovskite solar cell. Background Art

[0002] For the perovskite solar cell with the formal structure nip, the preparation process is generally to first treat the perovskite wet film layer with an anti-solvent, then anneal it at high temperature to form a perovskite absorption layer, and prepare a hole transport layer on the basis of the formed perovskite absorption layer. In the current conventional means, the hole transport layer is generally obtained by coating and annealing 2,2',7,7'-tetrabromo-9,9'-spirodi, tris(4-iodophenyl)amine (Spiro OMeTAD) doped with Li salt. The current preparation process of the perovskite solar cell with the formal structure nip has problems such as cumbersome procedures, time-consuming and labor-intensive, and poor repeatability. Summary of the invention

[0003] In view of this, the present invention provides a method for preparing a perovskite solar cell and a perovskite solar cell. The preparation method combines the two steps of anti-solvent treatment and separate preparation of a hole transport layer into one step, omitting the separate anti-solvent treatment of the perovskite wet film layer and the separate high-temperature annealing of the perovskite wet film layer, effectively simplifying the preparation process of the perovskite solar cell and making the preparation process have better repeatability.

[0004] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0005] In a first aspect, the present invention provides a method for preparing a perovskite solar cell, comprising:

[0006] Step 1: preparing an electron transport layer on a transparent conductive substrate;

[0007] Step 2, coating a perovskite wet film layer on the electron transport layer;

[0008] Step 3: coating a hole transport layer solution on the perovskite wet film layer and performing annealing treatment, wherein the hole transport layer solution comprises an anti-solvent and an organic polymer material for providing holes.

[0009] In a second aspect, an embodiment of the present invention provides a perovskite solar cell, which is prepared by the preparation method of the perovskite solar cell provided by the embodiment of the first aspect above.

[0010] The technical solution of the first aspect of the above invention has the following advantages or beneficial effects:

[0011] The technical solution provided in the embodiment of the present invention provides a preparation method for a perovskite solar cell with a formal structure NIP, which includes an anti-solvent and a hole transport layer solution of an organic polymer material for providing holes, which is directly coated on the perovskite wet film layer, and annealed to obtain a perovskite film layer and a hole transport layer stacked on the perovskite film layer. Compared with the existing preparation process of a perovskite solar cell with a formal structure NIP, the technical solution omits the process of separately performing anti-solvent treatment on the perovskite wet film layer and separately performing high-temperature annealing on the perovskite wet film layer, but directly coats the hole transport layer solution after forming the perovskite wet film layer, and simultaneously forms the hole transport layer and the perovskite absorption layer through one annealing, which effectively simplifies the preparation process of the perovskite solar cell, and makes the entire preparation process controllable with relatively good repeatability. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is an image of the film formed by directly coating the existing hole transport material Spiro OMeTAD on the perovskite wet film layer and annealing it;

[0013] Figure 2 It is a schematic diagram of the main process of the method for preparing a perovskite solar cell provided by an embodiment of the present invention;

[0014] Figure 3 is a schematic diagram of structural changes corresponding to the preparation method provided in an embodiment of the present invention;

[0015] Figure 4 is an image of the film layer formed after being processed in step S203 provided by an embodiment of the present invention;

[0016] Figure 5 It is a distribution comparison diagram of the cell conversion efficiency of the perovskite solar cell prepared multiple times by the prior art and the technical solution provided by the embodiment of the present invention;

[0017] Figure 6 It is a schematic diagram of the cross-sectional structure of a perovskite solar cell provided in an embodiment of the present invention.

[0018] The reference numerals are as follows:

[0019] 10-transparent conductive substrate; 20-electron transport layer; 30'-perovskite wet film layer; 30-perovskite absorption layer 40'-hole transport wet film layer; 40-hole transport layer; 50-metal electrode. DETAILED DESCRIPTION

[0020] At present, the photoelectric conversion efficiency of small-area perovskite solar cells prepared in the laboratory has reached 26.7%, which is close to the photoelectric conversion efficiency of crystalline silicon cells, but the theoretical limit efficiency of perovskite cells can reach 33.7%, which is higher than the theoretical limit efficiency of crystalline silicon cells of 29.4%. Due to its excellent photoelectric conversion efficiency, perovskite cells are expected to revolutionize traditional photovoltaic technology and become the most promising third-generation new solar cells. Perovskite cells are mainly divided into formal structures (NIP) and trans structures (PIN), among which there are certain differences in the materials selected for each functional film layer of the formal structure and the trans structure. The embodiments of the present invention are mainly aimed at perovskite cells with formal structures (NIP).

[0021] The hole transport layer of the perovskite cell with a formal structure (nip) is located between the perovskite absorption layer and the electrode. Its function is to guide the holes generated by the perovskite absorption layer to the electrode to form a current. Therefore, both the hole transport layer and the perovskite absorption layer play a decisive role in the performance of the perovskite cell. In the prior art, the perovskite solar cell with a formal structure nip generally uses Li salt-doped 2,2',7,7'tetrabromo-9,9'-spirodi, tri(4-iodophenyl)amine (Spiro OMeTAD) to prepare the hole transport layer. In addition, the process of preparing perovskite solar cells in the prior art is: preparing an electron transport layer on a conductive substrate (such as conductive glass), spin coating a perovskite precursor solution on the electron transport layer, forming a perovskite absorption layer by anti-solvent treatment and high-temperature annealing of the perovskite precursor solution, spin coating SpiroOMeTAD on the perovskite absorption layer, and annealing to obtain a hole transport layer. For the currently used Spiro OMeTAD, if the anti-solvent treatment and high-temperature annealing treatment are omitted, the film structure obtained by directly spin-coating the perovskite precursor solution and then spin-coating SpiroOMeTAD dissolved in the anti-solvent and then annealing has Figure 1 The cracks shown in the figure cause the perovskite absorption layer and the hole transport layer to be unable to form uniformly, affecting the performance of the perovskite solar cell. This may be because the anti-solvent coated with Spiro OMeTAD cannot contact the perovskite precursor solution well, causing the perovskite precursor solution to be unable to crystallize uniformly, and the residual solvent cannot be removed, thereby causing the perovskite absorption layer to crack. Therefore, in the prior art, before spin coating the solution to form the hole transport layer, during the formation of the perovskite absorption layer, it is necessary to perform an anti-solvent treatment separately to remove excess precursor molecules and excess residual solvent in the perovskite film, so as to convert the perovskite solution into perovskite crystals. Then annealing treatment is performed to form the perovskite absorption layer. However, the existing perovskite solar cell preparation process is relatively cumbersome, not only time-consuming and labor-intensive, but also each process requires relatively good regulation and coordination, resulting in poor process repeatability and process stability, which is not conducive to industrial production.

[0022] In order to solve the above-mentioned problems existing in the prior art of preparing perovskite solar cells with a formal structure of NIP, the embodiments of the present invention improve the preparation process of perovskite solar cells with a formal structure of NIP, and provide a perovskite solar cell with a new structure of a formal structure of NIP.

[0023] in, Figure 2 A schematic diagram showing the main process of a method for preparing a perovskite solar cell provided by an embodiment of the present invention; Figure 3 A schematic diagram of the structural changes corresponding to the preparation method is shown.

[0024] Specifically, Figure 2 As shown, the method for preparing a perovskite solar cell provided by an embodiment of the present invention may include the following steps:

[0025] Step S201: preparing an electron transport layer on a transparent conductive substrate;

[0026] The structural changes corresponding to this step are as follows: Figure 3 As shown, an electron transport layer 20 is prepared by stacking on a transparent conductive substrate 10, wherein the transparent conductive substrate 10 can directly select a conductive substrate material commonly used in current perovskite solar cells, such as transparent glass with a FTO conductive film layer, transparent glass with an ITO conductive film layer, etc.

[0027] The electron transport layer prepared in this step can be prepared directly using existing preparation processes, such as spraying or spin coating the electron transport layer precursor solution and high temperature annealing to obtain the electron transport layer; the electron transport layer can also be prepared by dry methods such as electroplating, chemical deposition and other processes. The electron transport layer prepared in this step includes one or more of the following materials: zinc oxide, titanium oxide, nickel oxide and tin oxide.

[0028] It is worth noting that the transparent conductive substrate 10 may be cleaned before this step. Specifically, it may be cleaned sequentially with distilled water and organic solvent by ultrasonic cleaning, dried with nitrogen, and then further disinfected and sterilized by ultraviolet ozone.

[0029] Step S202: coating a perovskite wet film layer on the electron transport layer;

[0030] The structural changes corresponding to this step are as follows: Figure 3 As shown, a perovskite wet film layer 30 ′ is formed on the electron transport layer 20 .

[0031] In this step, the perovskite precursor solution can be coated on the electron transport layer by spin coating to obtain the perovskite wet film layer 30'. The perovskite precursor solution generally includes ABX3 type perovskite materials, wherein A is a mixture of one or more of methylamine (MA), formamidine (FA), cesium (Cs), rubidium (Rb), and methylenediamine (MDA), B is a mixture of one or more of lead (Pb) and tin (Stannum, Sn), and X is a mixture of one or more of iodine (I), bromine (Br), and chlorine (Cl). In addition, in addition to the ABX3 type perovskite material, the perovskite precursor solution can also include other solvents such as dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) mixed in a certain proportion, as well as additives. The perovskite precursor solution used in this step can be directly selected from the perovskite precursor solution used in the existing process. In addition, the process of coating the perovskite wet film layer 30' can also directly use the process of spin coating the perovskite precursor solution in the existing perovskite cell production process.

[0032] Step S203: coating a hole transport layer solution on the perovskite wet film layer and performing annealing treatment, wherein the hole transport layer solution includes an anti-solvent and an organic polymer material for providing holes.

[0033] For step S203, the structure changes corresponding to coating the hole transport layer solution on the perovskite wet film layer 30' are as follows: Figure 3 As shown in FIG. 1 , a hole transport wet film layer 40 ′ is stacked on the perovskite wet film layer 30 ′. After subsequent annealing treatment, the corresponding structural changes are as follows: Figure 3 As shown, the perovskite wet film layer 30 ′ becomes the perovskite absorption layer 30 , and the hole transport wet film layer 40 ′ becomes the hole transport layer 40 .

[0034] In particular, the step S203 of coating the hole transport layer solution is performed 10s to 20s before the step S202 of coating the perovskite wet film layer 30' is completed, so that the hole transport layer solution and the perovskite wet film layer 30' have better contact at the interface, so that the anti-solvent contained in the coated hole transport layer solution can be better in contact with the perovskite wet film layer 30', which is beneficial to the transformation of the perovskite wet film layer 30' into crystals and to the removal of residual solvents in the perovskite wet film layer 30'. For example, the step S203 of coating the hole transport layer solution can be performed 10s, 12s, 15s, 18s, 20s, etc. before the step S202 of coating the perovskite wet film layer 30' is completed.

[0035] Further, the anti-solvent included in the hole transport layer solution used in step S203 may be a halide solvent or an aromatic solvent. Specifically, the hole transport layer solution is made by dissolving an organic polymer material in an anti-solvent. In general, the concentration of the hole transport layer solution may be 0.5 to 10 mg / mL, wherein the concentration of the hole transport layer solution generally refers to the concentration of the organic polymer material in the hole transport layer solution. Exemplarily, the concentration of the hole transport layer solution may be 0.5 mg / mL, 0.6 mg / mL, 1 mg / mL, 3 mg / mL, 5 mg / mL, 6 mg / mL, 8 mg / mL or 10 mg / mL, etc. The control of the concentration of the hole transport layer solution may ensure the crystallization of the perovskite wet film layer 30', and facilitate the removal of residual solvent in the perovskite wet film layer 30', thereby avoiding excessive residual solvent in the perovskite absorption layer 30.

[0036] Illustratively, in this step, the anti-solvent included in the hole transport layer solution may be one or more of the following solvents.

[0037]

[0038] Furthermore, the hole transport layer solution used in step S203 includes an organic polymer material for providing holes, and generally an organic polymer material with an energy level in the range of -5.70 eV to -3.8 eV is selected. By selecting an organic polymer material with an energy level in the range of -5.70 eV to -3.8 eV, a relatively good energy level match can be formed with the perovskite absorption layer, and the organic polymer material has a relatively good film-forming effect, and will not affect the crystallization of the perovskite wet film layer. After omitting the anti-solvent treatment and high-temperature annealing treatment of the perovskite wet film layer separately, the perovskite wet film layer 30' and the hole transport wet film layer 40' are subjected to a one-step annealing treatment, so that the perovskite wet film layer 30' can form a complete perovskite absorption layer 30. For example, as Figure 4 The image of the film layer formed after the above step S203 is shown. Figure 4It can be seen that the hole transport layer 40 and the perovskite absorption layer 30 formed in step S203 can maintain integrity and no Figure 1 Cracks or fissures shown.

[0039] In addition, the organic polymer material forms a film relatively well, cooperates with the anti-solvent, is conducive to the crystallization of the perovskite wet film layer 30', and removes the residual solvent in the perovskite wet film layer 30', and the process does not destroy the integrity of the perovskite wet film layer 30', so that the perovskite wet film layer 30' and the hole transport wet film layer 40' are annealed in one step, and a complete perovskite absorption layer 30 can also be formed. Exemplarily, the organic polymer material can be one or more combinations of the following solvents:

[0040]

[0041] The degree of polymerization of the various organic polymer materials mentioned above can be any value, as long as the organic polymer material is soluble in the anti-solvent.

[0042] Furthermore, the annealing temperature used in this step is generally 90°C~150°C. For example, the annealing temperature of this step can be 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, 125°C, 130°C, 135°C, 140°C, 145°C or 150°C, etc.

[0043] In addition, in this step, the annealing time can be controlled within 10 min to 30 min. For example, the annealing time in this step can be 10 min, 12 min, 15 min, 18 min, 20 min, 24 min, 25 min, 28 min or 30 min.

[0044] Further, the thickness of the hole transport layer formed after annealing in this step can be 10nm~100nm, for example, the thickness of the hole transport layer can be 10nm, 20nm, 30nm, 35nm, 40nm, 45nm, 50nm, 60nm, 65nm, 70nm, 80nm, 90nm or 100nm, etc. Since the organic polymer material has a relatively good film-forming property, the thickness of the hole transport layer is within 10nm~100nm, so that the hole transport layer can form a complete film layer, and the perovskite absorption layer 30 can be avoided from contacting the electrode. In addition, the thickness of the hole transport layer is within 10nm~100nm, which is also conducive to sunlight reaching the perovskite absorption layer 30, improving the utilization rate of sunlight, and helping to improve the photoelectric conversion capacity of the perovskite solar cell.

[0045] Furthermore, if Figure 2As shown, after the above step S203, the following further includes: step S204: preparing a metal electrode on the hole transport layer by evaporation. The structural changes corresponding to step S204 are as follows Figure 3 As shown, a metal electrode 50 is formed on the hole transport layer 40. The metal electrode can be one of copper, nickel, titanium, manganese, gold, silver, aluminum, platinum, calcium, barium, magnesium, molybdenum or liquid metal, preferably gold, silver or aluminum.

[0046] Furthermore, the above technical solution provided in the embodiment of the present invention (omitting the anti-solvent treatment and high-temperature annealing treatment of the perovskite wet film layer separately) is used to prepare perovskite solar cells multiple times, and the prior art (first anti-solvent treatment and high-temperature annealing treatment after the perovskite wet film layer is formed, and then Spiro OMeTAD is used to prepare the hole transport layer) is used to prepare perovskite solar cells multiple times. The conversion efficiency of the perovskite solar cells prepared multiple times is tested, and the comparison diagram obtained is as follows: Figure 5 As shown. Figure 5 It can be seen that the conversion efficiency of the perovskite solar cells prepared multiple times using the prior art is relatively scattered, indicating that the process stability of the perovskite solar cells prepared by the prior art is poor. Compared with the prior art, the conversion efficiency of the perovskite solar cells prepared multiple times using the technical solution provided by the embodiment of the present invention is relatively concentrated, indicating that the process stability of the perovskite solar cells prepared by the prior art is good and has relatively high repeatability. And compared with the perovskite solar cells prepared by the prior art, the perovskite solar cells prepared using the technical solution provided by the embodiment of the present invention have better conversion efficiency.

[0047] In summary, the above-mentioned embodiment provides a method for preparing a perovskite solar cell with a formal structure NIP, which includes an anti-solvent and a hole transport layer solution of an organic polymer material for providing holes, which is directly coated on the perovskite wet film layer, and annealed to obtain a perovskite film layer and a hole transport layer stacked on the perovskite film layer. Compared with the existing preparation process of perovskite solar cells with a formal structure NIP, the present technical solution omits the process of separately performing anti-solvent treatment on the perovskite wet film layer and separately performing high-temperature annealing on the perovskite wet film layer. Instead, the hole transport layer solution is directly coated after the perovskite wet film layer is formed, and the hole transport layer and the perovskite absorption layer are simultaneously formed by one annealing, which effectively simplifies the preparation process of the perovskite solar cell, and makes the entire preparation process controllable with relatively good repeatability.

[0048] In addition, the preparation process of the perovskite solar cell provided by the embodiment of the present invention omits the separate anti-solvent treatment and separate annealing process of the perovskite wet film layer compared to the existing preparation process. Therefore, the preparation process of the perovskite solar cell provided by the embodiment of the present invention can still use the equipment used in the existing preparation process without increasing the equipment cost, and even reducing the processing steps can effectively reduce the process cost.

[0049] Furthermore, an embodiment of the present invention also provides a perovskite solar cell. The perovskite solar cell is prepared by the perovskite solar cell provided by the above embodiment.

[0050] Specifically, Figure 6 As shown, the perovskite solar cell may include: a transparent conductive substrate 10, an electron transport layer 20, a perovskite absorption layer 30, a hole transport layer 40 and a metal electrode 50, wherein the hole transport layer 40 includes an organic polymer material for providing holes.

[0051] Specifically, the energy level of the organic polymer material for providing holes included in the hole transport layer 40 is in the range of -5.70 eV to -3.8 eV. More specifically, the organic polymer material for providing holes included in the hole transport layer 40 can be one or more combinations of the following organic polymers:

[0052]

[0053] Further, the thickness of the hole transport layer 40 can be 10nm ~ 100nm. For example, the thickness of the hole transport layer can be 10nm, 20nm, 30nm, 35nm, 40nm, 45nm, 50nm, 60nm, 65nm, 70nm, 80nm, 90nm or 100nm. Since the organic polymer material has a relatively good film-forming property, the thickness of the hole transport layer is within 10nm ~ 100nm, so that the hole transport layer can form a complete film layer, and the perovskite absorption layer 30 can be avoided from contacting the electrode. In addition, the thickness of the hole transport layer is within 10nm ~ 100nm, which is also conducive to sunlight reaching the perovskite absorption layer 30, improving the utilization rate of sunlight, and helping to improve the photoelectric conversion capacity of the perovskite solar cell.

[0054] The perovskite solar cell provided by the embodiment of the present invention not only has a relatively simple preparation process and relatively good repeatability, but can also effectively improve the photoelectric conversion performance.

[0055] The following describes in detail the preparation process provided by the embodiments of the present invention and the performance comparison of the perovskite solar cells prepared in the embodiments and the comparative examples with several specific embodiments and corresponding comparative examples.

[0056] Embodiment 1:

[0057] Step A1: dissolve PM6 in chlorobenzene solvent to form a PM6 solution with a concentration of 8 mg / mL, and dissolve it at room temperature for 2 hours;

[0058] Step A2: Spin-coat the PM6 solution 15 seconds before the end of spin coating of the perovskite wet film layer, with a rotation speed of 6000 rpm. After the PM6 solution is spin-coated, annealing is performed at a temperature of 100° C. for 20 minutes.

[0059] Comparative Example 1 corresponding to Example 1:

[0060] Step A1': 15 seconds before the end of the spin coating of the perovskite wet film layer, spin coating the anti-solvent chlorobenzene, the rotation speed used is 6000 rpm, and annealing is performed at a temperature of 100° C. for 20 minutes to form a perovskite absorption layer;

[0061] Step A2': spin-coat the PM6 hole transport layer on the perovskite absorption layer at a rotation speed of 6000 rpm. After the spin coating, annealing is performed at a temperature of 100° C. for 20 min.

[0062] It is worth noting that the transparent conductive substrate used in Example 1 and Comparative Example 1 is the same, the electron transport layer and the electrode are prepared using existing processes, and the process parameters used to prepare the electron transport layer and the electrode are also the same.

[0063] The performance test results of the perovskite solar cells formed in Example 1 and Comparative Example 1 are shown in Table 1 below.

[0064]

[0065] Embodiment 2:

[0066] In this embodiment 2, PTQ10 is dissolved in chlorobenzene solvent to prepare a PTQ10 solution, and the PTQ10 solution is used as the hole transport layer solution. The other processing procedures are the same as those in the embodiment 1.

[0067] Comparative Example 2 corresponding to Example 2:

[0068] The processing procedure is the same as that of Comparative Example 1, except that the PM6 hole transport layer used in step A2' is replaced by PTQ10.

[0069] It is worth noting that the transparent conductive substrate used in Example 2 and Comparative Example 2 is the same, the electron transport layer and the electrode are prepared using existing processes, and the process parameters used to prepare the electron transport layer and the electrode are also the same.

[0070] The performance test results of the perovskite solar cells formed in Example 2 and Comparative Example 2 are shown in Table 2 below.

[0071]

[0072] Embodiment 3:

[0073] In this embodiment 3, PDCBT is dissolved in chlorobenzene solvent to prepare a PDCBT solution, and the PDCBT solution is used as the hole transport layer solution. The other processing procedures are the same as those in embodiment 1.

[0074] Comparative Example 3 corresponding to Example 3:

[0075] The processing procedure is the same as that of Comparative Example 1, except that the PM6 hole transport layer used in step A2' is replaced by PDCBT.

[0076] It is worth noting that the transparent conductive substrate used in Example 3 and Comparative Example 3 is the same, the electron transport layer and the electrode are prepared using existing processes, and the process parameters used to prepare the electron transport layer and the electrode are also the same.

[0077] The performance test results of the perovskite solar cells formed in Example 3 and Comparative Example 3 are shown in Table 3 below.

[0078]

[0079] The current density Jsc (mA / cm 2 ), open circuit voltage Voc (V), fill factor FF (%) and conversion efficiency Eff (%) It can be found that compared with the existing anti-solvent treatment and annealing process of the perovskite wet film layer in the perovskite solar cell preparation process (Comparative Example 1, Comparative Example 2 and Comparative Example 3), the anti-solvent treatment and annealing process of the perovskite wet film layer provided in the embodiment of the present invention is omitted, and the current density Jsc (mA / cm 2 ), open circuit voltage Voc(V), fill factor FF(%) and conversion efficiency Eff(%) are basically the same as those of the perovskite solar cells prepared in the existing perovskite solar cell preparation process. Therefore, the process of omitting the anti-solvent treatment and annealing of the perovskite wet film layer provided in the embodiment of the present invention can enable the perovskite solar cell to maintain relatively good performance.

[0080] The introduction provided in the above steps is only used to help understand the method, structure and core idea of ​​the present invention. For ordinary technicians in this technical field, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also belong to the scope of protection of the claims of the present invention.

Claims

1. A method for preparing a perovskite solar cell, characterized in that: include: Step 1: preparing an electron transport layer on a transparent conductive substrate; Step 2, coating a perovskite wet film layer on the electron transport layer; Step 3: coating a hole transport layer solution on the perovskite wet film layer and performing annealing treatment, wherein the hole transport layer solution comprises an anti-solvent and an organic polymer material for providing holes.

2. The method for preparing a perovskite solar cell according to claim 1, characterized in that: 10s to 20s before the end of coating the perovskite wet film layer in step 2, step 3 is performed.

3. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The energy level of the organic polymer material is in the range of -5.70 eV to -3.8 eV.

4. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The organic polymer material is one or more combinations of the following organic polymers: 。 5. The method for preparing a perovskite solar cell according to any one of claims 1 to 4, characterized in that: The anti-solvent is a halide solvent or an aromatic solvent; and / or, The hole transport layer solution is prepared by dissolving the organic polymer material in the anti-solvent; and / or, The concentration of the hole transport layer solution is 0.5 mg / mL to 10 mg / mL.

6. The method for preparing a perovskite solar cell according to any one of claims 1 to 4, characterized in that: The thickness of the hole transport layer is 10nm to 100nm.

7. The method for preparing a perovskite solar cell according to any one of claims 1 to 4, characterized in that: The annealing temperature of step 3 is 90°C to 150°C; and / or, The annealing time of step 3 is 10min~30min.

8. The method for preparing a perovskite solar cell according to claim 1, characterized in that: Also includes: Step 4: preparing a metal electrode on the hole transport layer by evaporation.

9. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The electron transport layer prepared in step 1 comprises one or more of the following materials: Zinc oxide, titanium oxide, nickel oxide and tin oxide.

10. A perovskite solar cell, characterized in that: The perovskite solar cell is prepared by the preparation method of any one of claims 1 to 9.

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