Transistor and manufacturing method thereof
By forming a processing layer between the channel layer and the source and drain of the transistor, including specific elements, the problem of insufficient oxygen in the channel layer is solved and the stability and performance of the element are improved.
Patent Information
- Application Number
- CN202380040448.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-05-19
- Filing Date
- 2023-05-16
- Publication Date
- 2024-12-27
AI Technical Summary
During the manufacturing process, the channel layer of the transistor is easily damaged when exposed to etching gas, resulting in insufficient oxygen, increasing electrical conductivity, short-circuiting the component, and unable to drive stably.
The treatment layer is formed between the channel layer and the source and drain, including elements such as indium, gallium, zinc, tin, nickel, etc., and is formed at high temperature by selective or non-selective deposition method, and the second treatment layer is further added to Improve charge mobility and reduce contact resistance.
Effectively prevent insufficient oxygen in the channel layer, improve switching characteristics, reduce contact resistance, and improve component characteristics and reliability.
Smart Images
Figure CN119213570A_ABST