Wafer edge defect repairing device and repairing method

Abstract

The invention provides a wafer edge defect repairing device and method, the wafer edge defect repairing device comprises a protective shell, a bearing table, a polishing head, a grinding liquid nozzle and a cleaning nozzle, the bearing table is rotatably connected in the protective shell, a grinding ring pad is arranged on the top surface of the bearing table and is close to the peripheral edge of the bearing table, and a rotary driving part is arranged at the bottom of the protective shell; the grinding liquid nozzle is arranged on the inner circumferential wall of the protective shell and used for spraying grinding liquid to the bearing table, and the cleaning nozzle is embedded in the top face of the bearing table and used for cleaning the bottom face of the wafer. According to the wafer edge defect repairing device provided by the invention, the grinding ring pad on the bearing table is used for repairing and grinding the edge position of the wafer, and the bottom surface of the wafer can be effectively cleaned by virtue of the cleaning nozzle, so that double functions of wafer edge repairing and wafer flushing are met, edge residues at the edge position of the wafer can be ground, and the wafer edge defect repairing efficiency is improved. And grinding residues and chemical residues on the surface of the wafer can be cleaned in time, and the product yield can be improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of wafer repair, and more specifically, relates to a wafer edge defect repairing device and a repairing method. Background Art

[0002] With the rapid development of the semiconductor industry, the feature size of integrated circuits is becoming increasingly miniaturized. The high flatness of the surface of semiconductor films has an important impact on the high performance, low cost and high yield of devices. Chemical Mechanical Polishing (CMP) is a method of flattening silicon wafers using chemical corrosion and mechanical force.

[0003] The operating principle of CMP is as follows: first, the workpiece surface material reacts chemically with the oxidant, catalyst, etc. in the polishing liquid to form a relatively easy-to-remove soft layer. Then, the soft layer is removed by the mechanical action of the abrasive and polishing pad in the polishing liquid to expose the workpiece surface again, and then chemical reaction and mechanical polishing are carried out until the surface polishing of the workpiece is completed.

[0004] During the operation, the wafer to be ground is grabbed by the robotic arm and placed on the wafer carrier, and positioned on the carrier. After the polishing head absorbs the wafer, it enters the first carrier for grinding, and then enters the second and third carriers for grinding. After all grinding is completed, the wafer returns to the top of the wafer carrier. The polishing head unloads the ground finished wafer onto the carrier, and the robotic arm grabs it and transfers it to the cleaning area. After all cleaning is completed, it enters the spin-drying unit, and finally the robotic arm transfers it to the crystal box.

[0005] During the above operation, since the surface of the wafer carrier will be in contact with the wafer to be ground and the finished wafer after grinding, various grinding residues on the surface of the carrier will adhere to the surface of the wafer. Therefore, the residues will adhere to the surface of the finished wafer, which will increase the difficulty of cleaning. In severe cases, the residues will be embedded in the surface of the wafer during subsequent grinding, causing various defects on the wafer and reducing the product yield. Summary of the invention

[0006] The object of the present invention is to provide a wafer edge defect repair device and a repair method, which can effectively ensure the product quality of finished wafers and improve the product yield.

[0007] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: to provide a wafer edge defect repair device, including a protective shell, a supporting platform, a polishing head, a grinding liquid nozzle and a cleaning nozzle, the protective shell opening is arranged upward, the supporting platform is rotatably connected in the protective shell, a grinding ring pad is provided on the top surface of the supporting platform, the grinding ring pad is arranged close to the outer peripheral edge of the supporting platform and is used to grind the edge of the wafer, a rotating driving part for driving the supporting platform to rotate is provided under the protective shell, the grinding liquid nozzle is arranged on the inner peripheral wall of the protective shell and is used to spray the grinding liquid onto the supporting platform, and the cleaning nozzle is embedded in the top surface of the supporting platform and is used to clean the bottom surface of the wafer.

[0008] In a possible implementation, a plurality of grinding liquid nozzles are arranged at intervals along the circumference of the protective shell, and a plurality of cleaning nozzles are arranged at intervals on the supporting platform.

[0009] In some embodiments, a liquid supply branch pipe and a liquid supply main pipe are further provided in the protective shell. There are several liquid supply branches, which are connected one-to-one with the grinding liquid nozzles. The liquid supply main pipe is connected to the lower end of the liquid supply branch pipe and is used to supply grinding liquid to the liquid supply branch pipe. The liquid supply main pipe is arranged through the bottom wall of the protective shell.

[0010] In a possible implementation, a drain pipe is further provided at the bottom of the protective shell, and the drain pipe is communicated with the interior of the protective shell for discharging waste grinding liquid or waste cleaning liquid.

[0011] In a possible implementation, the difference between the outer diameter of the grinding ring pad and the outer diameter of the wafer is 1 mm-3 mm, and the difference between the inner diameter of the wafer and the inner diameter of the grinding ring pad is 1 mm-3 mm.

[0012] In some embodiments, the thickness of the grinding ring pad is 1.2 mm-2 mm, and the width of the grinding ring pad along the radial direction is 3 mm-5 mm.

[0013] In a possible implementation, an adhesive layer is provided on the bottom wall of the grinding ring pad, and the adhesive layer is used to bond the grinding ring pad to the top surface of the supporting platform.

[0014] In some embodiments, the grinding ring pad is a component made of polyurethane material, and the adhesive layer is a component made of PVA material.

[0015] Compared with the prior art, the solution shown in the embodiment of the present application is that the grinding ring pad on the carrier table can repair and grind the edge of the wafer, and can also effectively clean the bottom surface of the wafer with the help of a cleaning nozzle, thereby meeting the dual functions of wafer edge repair and wafer flushing. It can not only grind away the edge residues at the edge of the wafer to avoid quality defects of the wafer, but also can promptly clean the grinding residues and chemical residues on the surface of the wafer, which helps to improve product yield and meet the processing requirements of the wafer.

[0016] The present invention also provides a wafer edge defect repair method, which comprises the following steps: S100: The polishing head absorbs the wafer onto the carrier; S200: The polishing head drives the wafer to rotate, and the polishing liquid nozzle sprays the polishing liquid onto the polishing ring pad, and the bottom edge of the wafer is polished with the help of the polishing ring pad; S300: The wafer surface is polished and the polishing head absorbs the wafer and lifts it up; S400: The cleaning nozzle sprays deionized water onto the bottom surface of the wafer to clean the wafer; S500: After the wafer surface is cleaned, the robotic arm drives the wafer to be transferred to other areas.

[0017] In one possible implementation, in step S200, the rotation speed of the polishing head is 25-30 rpm / min, the rotation speed of the carrier is 35-40 rpm / min, the pressure of the polishing head on the wafer is 1-1.5 psi, the flow rate of the grinding liquid is 50-60 ml / min, and the grinding time of the wafer is 5-8 seconds.

[0018] The wafer edge defect repair method provided in the embodiment of the present application utilizes the grinding ring pad on the carrier to repair and grind the edge position of the wafer, and uses the cleaning nozzle to effectively clean the bottom surface of the wafer, thereby satisfying the dual functions of wafer edge repair and wafer rinsing. It can not only grind away the edge residues at the edge position of the wafer to avoid quality defects of the wafer, but also can timely clean the grinding residues and chemical residues on the surface of the wafer, which helps to improve the product yield and meet the processing requirements of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0020] Figure 1 A schematic structural diagram of a first embodiment of a wafer edge defect repairing device provided by an embodiment of the present invention; Figure 2 A schematic structural diagram of a second embodiment of a wafer edge defect repairing device provided by an embodiment of the present invention; Figure 3 A schematic flow chart of a wafer edge defect repair method provided in an embodiment of the present invention.

[0021] Among them, the reference numerals in the figure are: 1. Protective shell; 11. Drain pipe; 12. Limit sleeve; 2. Carrying platform; 3. Polishing head; 4. Grinding liquid nozzle; 41. Liquid supply branch pipe; 42. Liquid supply main pipe; 43. Small water tank; 44. Vertical channel; 45. Rotary joint; 5. Cleaning nozzle; 6. Grinding ring pad; 7. Rotating drive member; 71. Drive shaft; 8. Wafer. DETAILED DESCRIPTION

[0022] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0023] It should be noted that when an element is referred to as being "disposed on" another element, it may be directly on another element or indirectly on another element. It should be understood that the orientation or positional relationship indicated by the terms "length", "width", "upper", "lower", "front", "back", "top", "bottom", "inside", "outside", etc. is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. The terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "several" is two or more, unless otherwise clearly and specifically defined.

[0024] Please also read Figures 1 to 3 , the wafer edge defect repairing device and repairing method provided by the present invention are now described. The wafer edge defect repairing device comprises a protective shell 1, a carrier 2, a polishing head 3, a grinding liquid nozzle 4 and a cleaning nozzle 5. The protective shell 1 is opened upward, the carrier 2 is rotatably connected in the protective shell 1, a grinding ring pad 6 is provided on the top surface of the carrier 2, and the grinding ring pad 6 is arranged close to the outer peripheral edge of the carrier 2 and is used to grind the edge of the wafer 8. A rotating driving member 7 for driving the carrier 2 to rotate is provided below the protective shell 1. The grinding liquid nozzle 4 is arranged on the inner peripheral wall of the protective shell 1 and is used to spray the grinding liquid onto the carrier 2. The cleaning nozzle 5 is embedded in the top surface of the carrier 2 and is used to clean the bottom surface of the wafer 8.

[0025] Compared with the prior art, the wafer edge defect repairing device provided in the present embodiment has a grinding ring pad 6 on the carrier 2 to repair and grind the edge position of the wafer 8, and can also effectively clean the bottom surface of the wafer 8 with the help of the cleaning nozzle 5, thereby meeting the dual functions of wafer 8 edge repair and wafer 8 flushing. It can not only grind away the edge residues at the edge position of the wafer 8 to avoid quality defects of the wafer 8, but also can timely clean the grinding residues and chemical residues on the surface of the wafer 8, which helps to improve the product yield and meets the processing requirements of the wafer 8.

[0026] In this embodiment, the carrier 2 can support both the wafer 8 before grinding and the finished wafer 8 after multiple grinding. For the convenience of description, the process of grinding the wafer 8 multiple times is defined as main grinding. The wafer 8 is first positioned with the help of the carrier 2, and then the main grinding is performed on the polishing disk under the action of the polishing head 3. After the main grinding is completed, the wafer 8 is generally rinsed directly, and then the edge of the wafer 8 is repaired and polished. After the repair is completed, the wafer 8 can be rinsed again. Specifically, deionized water can be used as the cleaning liquid to ensure the cleanliness of the cleaning.

[0027] The protective shell 1 arranged outside the carrier 2 can block the grinding liquid during the edge repair grinding process of the wafer 8, preventing the grinding liquid, deionized water and other liquids from splashing onto the nearby grinding platform. It can also block the cleaning liquid during the rinsing process of the wafer 8, meeting the dual needs of wafer 8 edge repair grinding and wafer 8 cleaning.

[0028] During cleaning, the carrier 2 is suitable for cleaning after the main grinding of the wafer 8, and is also suitable for cleaning after the edge repair grinding of the wafer 8. During the edge repair grinding of the wafer 8, the rotary drive 7 drives the carrier 2 to rotate circumferentially, and the polishing head 3 drives the wafer 8 to rotate and press against the grinding ring pad 6 of the carrier 2. The bottom edge of the wafer 8 contacts the grinding ring pad 6 on the carrier 2. The grinding ring pad 6 can form a grinding effect on the wafer 8, realize the repair of the bottom edge position of the wafer 8, and effectively solve the defect problem of the edge of the wafer 8.

[0029] The above device is suitable for 6-inch / 8-inch / 12-inch CMP machines, and the diameter of the carrier 2 can be set to different sizes such as 150mm, 200mm, 300mm and 450mm according to the size of the wafer 8 to be repaired.

[0030] The surface of the grinding ring pad 6 has a certain number of groove structures for ensuring the grinding and repairing effect on the edge of the wafer 8. The number of the grooves is selected according to the size requirements of the wafer 8 to be repaired.

[0031] In addition, a limiting sleeve 12 is provided at the bottom of the protective shell 1 and is sleeved on the outer circumference of the driving shaft 71 . The limiting sleeve 12 has a good limiting effect and ensures that the driving shaft 71 of the rotating driving member 7 can be reliably installed.

[0032] In one possible implementation, see Figures 1 to 3 A plurality of grinding liquid nozzles 4 are arranged at intervals along the circumference of the protective shell 1 , and a plurality of cleaning nozzles 5 are arranged at intervals on the supporting platform 2 .

[0033] In this embodiment, a plurality of grinding liquid nozzles 4 arranged on the inner circumference of the protective shell 1 are used to spray the grinding liquid on the wafer 8 from different angles to ensure that the grinding ring pad 6 has a grinding and repairing effect on the edge of the wafer 8. Specifically, if two grinding liquid nozzles 4 are provided, the two grinding liquid nozzles 4 are symmetrically located on both sides of the carrier 2. If three, four or other numbers of grinding liquid nozzles 4 are provided, the plurality of grinding liquid nozzles 4 should be arranged at intervals along the circumference of the protective shell 1, and the angle between two adjacent grinding liquid nozzles 4 should be kept consistent, thereby improving the uniformity of the grinding liquid spraying at each circumferential position of the wafer 8.

[0034] On the basis of the above structure, a plurality of cleaning nozzles 5 are provided, and the plurality of cleaning nozzles 5 are evenly arranged on the top surface of the carrier 2. They can be arranged in a matrix or distributed at circumferential intervals, so as to spray the cleaning liquid relatively evenly onto the bottom surface of the wafer 8 to improve the cleanliness of the wafer 8.

[0035] As an embodiment, a small water tank 43 for containing deionized water may be provided at the bottom of the support platform 2 . The small water tank 43 can rotate synchronously with the support platform 2 . The small water tank 43 is connected to the cleaning nozzle 5 to supply deionized water to the cleaning nozzle 5 .

[0036] As a parallel embodiment, a vertical channel 44 is connected below the cleaning nozzle 5. The vertical channel 44 extends along the main axis direction of the driving shaft 71. The lower end of the vertical channel 44 is connected to the deionized water tank through a rotating joint 45. The rotating joint 45 is sleeved on the outer periphery of the driving shaft 71 and is connected to the vertical channel 44. The above method can realize the continuous supply of clean water to meet the cleaning requirements of the wafer 8.

[0037] For some examples, see Figures 1 to 3 A liquid supply branch pipe 41 and a liquid supply main pipe 42 are also provided in the protective shell 1. A plurality of liquid supply branch pipes 41 are provided and are connected to the grinding liquid nozzles 4 one by one. The liquid supply main pipe 42 is connected to the lower end of the liquid supply branch pipe 41 and is used to supply grinding liquid to the liquid supply branch pipe 41. The liquid supply main pipe 42 passes through the bottom wall of the protective shell 1.

[0038] In this embodiment, each grinding liquid nozzle 4 is connected to a liquid supply branch pipe 41, and multiple liquid supply branch pipes 41 are collected in the same liquid supply main pipe 42, which is connected to the grinding liquid supply box. A water pump and a flow valve are provided on the liquid supply main pipe 42 to facilitate the control of the supply flow rate of the grinding liquid and realize the synchronous liquid supply to the multiple liquid supply branch pipes 41. The liquid supply main pipe 42 is arranged to penetrate the bottom wall of the protective shell 1 downward to avoid being adjacent to the upper polishing head 3 and other components, and fully utilize the lower space of the protective shell 1.

[0039] In one possible implementation, see Figures 1 to 3 The bottom of the protective shell 1 is also provided with a drain pipe 11, which is connected to the inside of the protective shell 1 and is used to discharge waste grinding liquid or waste cleaning liquid. By providing a drain port at the bottom of the protective shell 1, the waste grinding liquid in the edge grinding process of the wafer 8 can be conveniently discharged in an orderly manner, and the cleaning waste liquid in the cleaning process of the wafer 8 can also be discharged, thereby avoiding the accumulation of waste grinding liquid and cleaning waste liquid in the protective shell 1.

[0040] In a possible implementation, the difference between the outer diameter of the grinding ring pad 6 and the outer diameter of the wafer 8 is 1mm-3mm, and the difference between the inner diameter of the wafer 8 and the inner diameter of the grinding ring pad 6 is 1mm-3mm. When the grinding ring pad 6 is used to grind the wafer 8, it should be ensured that the outer diameter of the grinding ring pad 6 is larger than the outer diameter of the wafer 8, and at the same time, the inner diameter of the grinding ring pad 6 is smaller than the inner diameter of the wafer 8, so that the edge position of the wafer 8 can correspond to the grinding ring pad 6 up and down, and the grinding and repairing effect on the edge of the wafer 8 is achieved.

[0041] Specifically, the outer diameter of the grinding ring pad 6 is 1mm-3mm larger than the outer diameter of the wafer 8, and the inner diameter of the grinding ring pad 6 is 1mm-3mm smaller than the inner diameter of the wafer 8. This size relationship can ensure that the edge of the wafer 8 falls stably into the area covered by the grinding ring pad 6, thereby ensuring effective repair of the edge of the wafer 8 and avoiding defects in the wafer 8.

[0042] In some embodiments, the thickness of the grinding ring pad 6 is 1.2 mm-2 mm, and the width of the grinding ring pad 6 in the radial direction is 3 mm-5 mm. The thickness of the grinding ring pad 6 should meet the size requirements, so as to be able to present the groove design on the top surface and avoid material loss caused by excessive thickness. In addition, the width of the grinding ring pad 6 is preferably 3 mm-5 mm, which can effectively cover the edge position of the wafer 8 and ensure effective grinding of the edge portion of the wafer 8.

[0043] In one possible implementation, see Figures 1 to 3 The bottom wall of the grinding ring pad 6 is provided with an adhesive layer, and the adhesive layer is used to connect with the bearing platform 2. The grinding ring pad 6 is adhered to the bearing platform 2 through the adhesive layer, which is convenient for installation, can reduce the time consumed for structural installation, and is also convenient for subsequent removal and replacement of the grinding ring pad 6.

[0044] In some embodiments, the grinding ring pad 6 is a component made of polyurethane material, and the adhesive layer is a component made of PVA material.

[0045] In this embodiment, the grinding ring pad 6 is made of polyurethane, which is a substance formed by polymerizing ethane organic unit chains. It is soft, elastic, and has good flexibility, and is suitable for laminating the wafer 8. The surface of the grinding ring pad 6 is provided with multiple ring-shaped grooves, which can improve the grinding effect and shorten the grinding time.

[0046] The bonding layer is made of polyvinyl alcohol (PVA for short). Polyvinyl alcohol is an organic compound, which is a white flake, flocculent or powdery solid. Polyvinyl alcohol is an important chemical raw material, used to make polyvinyl acetal, gasoline-resistant pipelines and vinylon synthetic fibers, fabric treatment agents, emulsifiers, paper coatings, adhesives, glue, etc. The bonding layer is made using the bonding properties of polyvinyl alcohol. The thickness of the bonding layer is 0.2mm-0.5mm, which reduces the material consumption while ensuring the bonding effect.

[0047] Based on the same inventive concept, the embodiment of the present application also provides a wafer edge defect repair method, which includes the following steps: S100: The polishing head 3 absorbs the wafer 8 onto the top of the carrier 2; S200: The polishing head 3 drives the wafer 8 to rotate, and the grinding liquid nozzle 4 sprays the grinding liquid onto the grinding ring pad 6, and grinds the bottom edge of the wafer 8 with the help of the grinding ring pad 6, wherein the rotation speed of the polishing head 3 is 25-30rpm / min, the rotation speed of the carrier 2 is 35-40rpm / min, the pressure of the polishing head 3 on the wafer 8 is 1-1.5psi, the flow rate of the grinding liquid is 50-60ml / min, and the grinding time of the wafer 8 is 5-8 seconds.

[0048] S300: The surface grinding of the wafer 8 is completed, and the polishing head 3 absorbs the wafer 8 and lifts it; S400: the cleaning nozzle 5 sprays deionized water onto the bottom surface of the wafer 8 to clean the wafer 8; S500: After the surface of the wafer 8 is cleaned, the robotic arm drives the wafer 8 to be transferred to other areas.

[0049] The wafer edge defect repair method provided in this embodiment utilizes the grinding ring pad 6 on the carrier 2 to repair and grind the edge position of the wafer 8, and can also use the cleaning nozzle 5 to effectively clean the bottom surface of the wafer 8, thereby satisfying the dual functions of wafer 8 edge repair and wafer 8 flushing. It can not only grind away the edge residues at the edge position of the wafer 8 to avoid quality defects of the wafer 8, but also can timely clean the grinding residues and chemical residues on the surface of the wafer 8, which helps to improve the product yield and meets the processing requirements of the wafer 8.

[0050] Embodiment 1: The wafer edge defect repair method includes the following steps: S100: Mounting a wafer 8 with a diameter of 200 mm on the carrier 2, and the polishing head 3 adsorbs the wafer 8 above the carrier 2; S200: Select a polishing ring pad with an outer diameter of 202 mm, an inner diameter of 198 mm, and a thickness of 2 mm, and the width of the polishing pad is 5 mm, and the polishing ring pad is adhered to the carrier 2 through an adhesive layer with a thickness of 0.5 mm. The polishing head 3 drives the wafer 8 to rotate, and the grinding liquid nozzle 4 sprays the grinding liquid onto the grinding ring pad 6, and the bottom edge of the wafer 8 is ground with the help of the grinding ring pad 6. The rotation speed of the polishing head 3 is 25 rpm / min, the rotation speed of the carrier 2 is 40 rpm / min, the pressure of the polishing head 3 on the wafer 8 is 1.2 psi, the flow rate of the grinding liquid is 55 ml / min, and the grinding time of the wafer 8 is 7 seconds; S300: The surface grinding of the wafer 8 is completed, and the polishing head 3 absorbs the wafer 8 and lifts it; S400: the cleaning nozzle 5 sprays deionized water onto the bottom surface of the wafer 8 to clean the wafer 8; S500: After the surface of the wafer 8 is cleaned, the robotic arm drives the wafer 8 to be transferred to other areas.

[0051] The wafer 8 processed by the above method realizes the unification of the two functions of wafer 8 edge grinding and repair and wafer 8 cleaning. The finished wafer 8 after grinding can enter the carrier 2 for cleaning to clean the grinding residues or chemical residues on the surface of the wafer 8, thereby reducing the surface defects of the wafer 8 and improving the product yield.

[0052] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A wafer edge defect repair device, characterized in that: The invention comprises a protective shell (1), a supporting platform (2), a polishing head (3), a grinding liquid nozzle (4) and a cleaning nozzle (5); the protective shell (1) is opened upward, the supporting platform (2) is rotatably connected in the protective shell (1), a grinding ring pad (6) is provided on the top surface of the supporting platform (2), the grinding ring pad (6) is arranged close to the outer peripheral edge of the supporting platform (2) and is used for grinding the edge of the wafer (8), a rotating driving part (7) for driving the supporting platform (2) to rotate is provided below the protective shell (1), the grinding liquid nozzle (4) is arranged on the inner peripheral wall of the protective shell (1) and is used for spraying grinding liquid onto the supporting platform (2), and the cleaning nozzle (5) is embedded in the top surface of the supporting platform (2) and is used for cleaning the bottom surface of the wafer (8).

2. The wafer edge defect repairing device according to claim 1, characterized in that: A plurality of the grinding liquid nozzles (4) are arranged at intervals along the circumference of the protective shell (1), and a plurality of the cleaning nozzles (5) are arranged at intervals on the supporting platform (2).

3. The wafer edge defect repairing device according to claim 2, characterized in that: The protective shell (1) is also provided with a liquid supply branch pipe (41) and a liquid supply main pipe (42). The liquid supply branch pipes (41) are provided in a plurality and are connected to the grinding liquid nozzles (4) one by one. The liquid supply main pipe (42) is connected to the lower end of the liquid supply branch pipe (41) and is used to supply grinding liquid to the liquid supply branch pipe (41). The liquid supply main pipe (42) is arranged to penetrate the bottom wall of the protective shell (1).

4. The wafer edge defect repairing device according to claim 1, characterized in that: The bottom of the protective shell (1) is also provided with a drain pipe (11), which is connected to the interior of the protective shell (1) and is used to discharge waste grinding liquid or waste cleaning liquid.

5. The wafer edge defect repairing device according to claim 1, characterized in that: The difference between the outer diameter of the grinding ring pad (6) and the outer diameter of the wafer (8) is 1 mm to 3 mm, and the difference between the inner diameter of the wafer (8) and the inner diameter of the grinding ring pad (6) is 1 mm to 3 mm.

6. The wafer edge defect repairing device according to claim 5, characterized in that: The thickness of the grinding ring pad (6) is 1.2 mm to 2 mm, and the width of the grinding ring pad (6) along the radial direction is 3 mm to 5 mm.

7. The wafer edge defect repairing device according to claim 1, characterized in that: An adhesive layer is provided on the bottom wall of the grinding ring pad (6), and the adhesive layer is used to bond the grinding ring pad (6) to the top surface of the supporting platform (2).

8. The wafer edge defect repairing device according to claim 7, characterized in that: The grinding ring pad (6) is a component made of polyurethane material, and the adhesive layer is a component made of PVA material.

9. A wafer edge defect repair method, characterized in that: The following steps are involved: S100: The polishing head (3) adsorbs the wafer (8) onto the top of the carrier platform (2); S200: the polishing head (3) drives the wafer (8) to rotate, and the grinding liquid nozzle (4) sprays the grinding liquid onto the grinding ring pad (6), and the bottom edge of the wafer (8) is ground with the help of the grinding ring pad (6); S3 00: The surface grinding of the wafer (8) is completed, and the polishing head (3) absorbs the wafer (8) and lifts it up; S400: The cleaning nozzle (5) sprays deionized water onto the bottom surface of the wafer (8) to clean the wafer (8); S5 00: The surface cleaning of the wafer (8) is completed, and the robotic arm drives the wafer (8) to be transferred to other areas.

10. The wafer edge defect repairing method according to claim 9, characterized in that: In step S200, the rotation speed of the polishing head (3) is 25-30 rpm / min, the rotation speed of the support platform (2) is 35-40 rpm / min, the pressure of the polishing head (3) on the wafer (8) is 1-1.5 psi, the flow rate of the grinding liquid is 50-60 ml / min, and the grinding time of the wafer (8) is 5-8 seconds.

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