Radio frequency device and terminal equipment
By adding a fourth RF switch to the RF device or directly connecting the antenna group, the sensitivity reduction problem caused by the harmonic interference of the RF device in the multi-band is solved, and higher RF device performance and throughput are achieved.
Patent Information
- Application Number
- CN202310787572.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-29
- Publication Date
- 2024-12-31
AI Technical Summary
In the multi-band, the sensitivity of existing RF devices is reduced due to subharmonic interference, especially in carrier aggregation and dual-connection scenarios. Harmonic interference caused by frequency band overlap makes the received signal less sensitive.
By adding a fourth RF switch to the radio frequency device, the output path of the second power amplifier is controlled to ground, or the antenna group is directly connected through the second RF switch, to avoid harmonic components entering the second RF front-end module, reduce interference and improve sensitivity.
It effectively reduces harmonic interference, improves the sensitivity of RF devices in multi-band, especially in carrier aggregation and dual-connection scenarios, and improves the performance and throughput of RF devices.
Smart Images
Figure CN119232188A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to wireless communication technology, and in particular to a radio frequency device and a terminal device. Background Art
[0002] With the development of communication networks, from the initial 2G network that only supports voice calls to the current 5G network that supports high-speed data traffic, mobile communications are providing convenience for people's daily lives. However, the accompanying difficulty is that with the increase in communication network standards, terminal equipment must support communication requirements under various network standards such as 2G, 3G, 4G and 5G; limited by the size constraints of terminal equipment, the space of the printed circuit board (PCB) has not been greatly increased due to the increase in demand, which will lead to very tight space layout and wiring of the PCB board.
[0003] In order to cope with the increasing demand for various network standards and solve the problem of tight PCB layout and wiring, the high integration and miniaturization of devices have become a development trend. From the initial Phase 2 products that only support a single frequency band to the Phase 7 products that support the integration of various standards, the integration of devices is getting higher and higher, and the package size of devices is getting smaller and smaller.
[0004] The existing RF architecture has designed a highly integrated RF device (Power Amplifier Module+Duplexer+LNA, LPAMID), which integrates devices such as a power amplifier (PA), a duplexer and a low noise amplifier (LNA). The RF device supports the reception and transmission of RF signals in multiple frequency bands. Among them, the LPAMID of the low frequency band (Low Band, LB) (LB LPAMID for short) supports the reception and transmission of RF signals in the low frequency band, and the LPAMID of the middle high band (MHB) (MHB LPAMID for short) supports the reception and transmission of RF signals in the middle high frequency band. When the LB PA in the LB LPAMID device is working, it inevitably generates second, third and higher harmonics, which overlap with the frequency range of the receiving signal of the MHB LPAMID. For example, the frequency range of the Band8 doubled frequency transmission signal is 1760MHz to 1829.8MHz, and the frequency range of the Band3 receiving signal is 1805MHz to 1879.9MHz. When the isolation between devices or within the device is low, the LB LPAMID transmission signal will interfere with the MHB LPAMID receiving signal, making the sensitivity of the MHB LPAMID low. Summary of the invention
[0005] The embodiments of the present application are intended to provide a radio frequency device and a terminal equipment.
[0006] The technical solution of this application is implemented as follows:
[0007] In a first aspect, a radio frequency device is provided, including: a first radio frequency front-end module, a second radio frequency front-end module, a first radio frequency switch, a second radio frequency switch, a first antenna group, and a second antenna group;
[0008] The first RF front-end module includes a first power amplifier and a second power amplifier; the second RF front-end module includes a signal receiving device and a third RF switch;
[0009] The output end of the first power amplifier is connected to the first transceiver end of the first RF switch, and the antenna end of the first RF switch is connected to the first antenna group to form a first transmission path for transmitting RF signals of a first frequency band;
[0010] The output end of the second power amplifier is connected to the first transceiver end of the third RF switch, the antenna end of the third RF switch is connected to the first transceiver end of the second RF switch, and the antenna end of the second RF switch is connected to the second antenna group to form a second transmission path for transmitting RF signals of a second frequency band;
[0011] The input end of the signal receiving device is connected to the second transceiver end of the third RF switch, and the second antenna group is connected through the third RF switch and the second RF switch to form a receiving path for receiving RF signals in a third frequency band; wherein the second frequency band and the third frequency band at least partially overlap;
[0012] The radio frequency device further includes a fourth radio frequency switch, and the output end of the second power amplifier is grounded through the fourth radio frequency switch;
[0013] When the second power amplifier is working, the fourth radio frequency switch is controlled to be turned off; when the receiving signal processor is working, the fourth radio frequency switch is controlled to be turned on, so that the harmonic components leaked from the first power amplifier are conducted to the ground.
[0014] In a second aspect, a radio frequency device is provided, including: a first radio frequency front-end module, a second radio frequency front-end module, a first radio frequency switch, a second radio frequency switch, a first antenna group, and a second antenna group;
[0015] The first RF front-end module includes a first power amplifier and a second power amplifier; the second RF front-end module includes a signal receiving device and a third RF switch;
[0016] The output end of the first power amplifier is connected to the first transceiver end of the first RF switch, and the antenna end of the first RF switch is connected to the first antenna group to form a first transmission path for transmitting RF signals of a first frequency band;
[0017] The output end of the second power amplifier is connected to the second antenna group through the second radio frequency switch to form a second transmission path for transmitting radio frequency signals in a second frequency band;
[0018] The input end of the signal receiving device is connected to the second antenna group through the third RF switch and the second RF switch in sequence to form a receiving path for receiving RF signals in a third frequency band; wherein the second frequency band and the third frequency band at least partially overlap.
[0019] In a third aspect, a terminal device is provided, comprising any radio frequency device of the first aspect or the second aspect.
[0020] In an embodiment of the present application, a radio frequency device and a terminal device are provided, the radio frequency device comprising: a first radio frequency front-end module, a second radio frequency front-end module, a first antenna group, a second antenna group, a first radio frequency switch and a second radio frequency switch; the second power amplifier in the first radio frequency front-end module is connected to the third radio frequency switch inside the second radio frequency front-end module, and then connected to the second antenna module through the second radio frequency switch. When the first power amplifier and the signal receiving device are working at the same time, in order to reduce the interference of the harmonic components leaked from the first power amplifier to the received signal of the second radio frequency front-end module through the output path of the second power amplifier, a ground branch and a fourth radio frequency switch are added so that the harmonic components are conducted to the ground; or; the second power amplifier in the first radio frequency front-end module is directly connected to the second antenna group through the second radio frequency switch, that is, the harmonic components will not enter the second radio frequency front-end module, and the interference of the harmonic components to the received signal of the second radio frequency front-end module can also be reduced, thereby improving the sensitivity of the second radio frequency front-end module. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 A schematic diagram of a Phase 7 radio frequency architecture;
[0022] Figure 2 A schematic diagram of Phase7 lite radio frequency architecture;
[0023] Figure 3 It is a schematic diagram of fundamental wave component and harmonic wave component;
[0024] Figure 4 This is a schematic diagram of the first component structure of the radio frequency device in an embodiment of the present application;
[0025] Figure 5 This is a schematic diagram of the second component structure of the radio frequency device in an embodiment of the present application;
[0026] Figure 6 This is a schematic diagram of the third component structure of the radio frequency device in the embodiment of the present application;
[0027] Figure 7 This is a schematic diagram of a fourth component structure of the radio frequency device in an embodiment of the present application;
[0028] Figure 8 This is a schematic diagram of the fifth component structure of the radio frequency device in the embodiment of the present application;
[0029] Fig. 9 Schematic diagram of the sixth component structure of the radio frequency device in the embodiment of the present application. DETAILED DESCRIPTION
[0030] In order to enable a more detailed understanding of the features and technical contents of the embodiments of the present application, the implementation of the embodiments of the present application is described in detail below in conjunction with the accompanying drawings. The attached drawings are for reference only and are not used to limit the embodiments of the present application.
[0031] Figure 1 The diagram is a schematic diagram of a Phase 7 radio frequency architecture, which includes: a radio frequency transceiver, an external QLNA, a PAMiD device, and a discontinuous reception DRX device. The PAMiD device integrates PA, filters, switches, and other devices.
[0032] Figure 2 A schematic diagram of the Phase7 lite RF architecture. Phase7 lite is an upgraded product based on Phase7. Figure 1 and Figure 2 It can be seen that the main feature of Phase7 lite is that while keeping the original Phase7 device package size unchanged, the external QLNA part is integrated into the PA Mid device to become an L-PA Mid device with LNA, thereby achieving the purpose of highly integrated and miniaturized devices; through this operation, a certain amount of space can be freed up for other modules, which is convenient for performance improvement and cost reduction of other modules of the whole machine; at the same time, the L-PA Mid device is directly connected to the Transceiver device, which reduces the connection of the RF line and reduces the complexity of the motherboard layout and wiring.
[0033] CA_ENDC
[0034] Carrier Aggregation (CA), 3GPP defines the frequency range of the frequency band, but the spectrum resources are limited. The early communication protocol has planned the bandwidth requirements for its deployment. If the bandwidth is directly expanded, it will lead to incompatibility with downstream protocols, devices, terminals, etc. In order to obtain higher peak rates and throughput, two or more component carriers (CCs) are aggregated together through multiple continuous or non-continuous components to support a larger transmission bandwidth. Among them, Long Term Evolution (LTE) technology and New Radio (NR) technology both have CA.
[0035] 4G and 5G dual connectivity (E-UTRAN New Radio-Dual Connectivity, ENDC) refers to a dual connectivity technology under NSA networking. The interruption device can be connected to the 4G base station and the 5G base station at the same time. On the basis of dual connectivity, the 4G part and the 5G part can also perform carrier aggregation within them, which is equivalent to adding the 4G bandwidth, which can further enhance the downlink transmission rate.
[0036] In the CA or ENDC scenario, LB LPAMID+MHB LPAMID work in combination. For example, the frequency bands of carrier aggregation can be: LTE CA_8A-3A, NR CA_N8A-N3A, ENDC_28A-N41A, etc.
[0037] Harmonic interference:
[0038] From the Fourier series, we know that any periodic waveform can be decomposed into a fundamental frequency sine wave plus many harmonic frequency sine waves, such as Figure 3 As shown. The main reason for the generation of harmonics is that the sinusoidal voltage is applied to the nonlinear load, causing the fundamental current to be distorted. The frequency of the harmonic must be equal to an integer multiple of the fundamental frequency. The wave with 3 times the fundamental frequency is called the third harmonic, and the wave with 5 times the fundamental frequency is called the fifth harmonic, and so on. Generally, in the signal system, the second and third harmonic components have the greatest impact.
[0039] Table 1 Frequency range of some frequency bands
[0040]
[0041]
[0042] Table 1 shows the frequency range of some frequency bands. For example, signals below 1.4 GHz are low-frequency signals, signals between 1.4 GHz and 2.7 GHz are medium-frequency signals, and signals above 2.7 GHz are high-frequency signals. It can be seen that the double or triple frequency of the TX frequency of the Band 8\12\28\71 band will overlap with the RX frequency range of the Band 2\3\4\66 band. When the LB LPAMID+MHB LPAMID combination works, the LB PA in the LBLPAMID device will inevitably produce second, third and higher harmonics when working. For example, when the primary carrier component (PCC) is LB, the LB TX signal harmonics interfere with the MHB LPAMID receive signal, causing the sensitivity of the secondary carrier (SCC) RX signal to be significantly attenuated. Here are just some common combinations listed as examples, not all combinations or all combinations that need to be supported. In the ENDC state, the frequencies of 4G and 5G bands are the same, and the same problem will occur.
[0043] Sensitivity refers to the minimum input signal level that a receiver can receive while meeting a certain bit error rate (BER) performance. 3GPP stipulates that when testing sensitivity indicators, the BER must be less than 5%, that is, the throughput must be higher than 95%; under the above conditions, the minimum input level signal measured is the sensitivity of the receiver.
[0044] Sensitivity can be calculated by theoretical formula, which can be expressed as Sensitivity = -174 + 10lgBW + NF; where BW refers to the working frequency bandwidth of the receiver, in Hz; NF refers to the noise factor of the receiver, in dB. Therefore, by extracting BW and NF data, the sensitivity performance of the receiver can be calculated theoretically.
[0045] The specific attenuation value of sensitivity is related to the actual isolation of the LPAMID device and the difference loss of 2G HB TX in the transmission path, and is related to the PCC TX uplink resource block configuration. As long as the uplink resource block configuration makes the second and third harmonic components of the TX signal overlap with the RX signal receiving frequency range, there will be interference. The magnitude of the interference is determined by several factors.
[0046] To facilitate understanding of the technical solutions of the embodiments of the present application, the technical solutions of the present application are described in detail below through specific embodiments. The above related technologies can be combined arbitrarily with the technical solutions of the embodiments of the present application as optional solutions, and they all belong to the protection scope of the embodiments of the present application. The embodiments of the present application include at least part of the following contents.
[0047] Figure 4 Schematic diagram of the first structure of the radio frequency device in the embodiment of the present application. Figure 4 As shown, the radio frequency device includes: a first radio frequency front-end module 10, a second radio frequency front-end module 11, a first radio frequency switch 12, a second radio frequency switch 13, a first antenna group 14 and a second antenna group 15;
[0048] The first RF front-end module 10 includes a first power amplifier 101 and a second power amplifier 102; the second RF front-end module 11 includes a signal receiving device 111 and a third RF switch 112;
[0049] The output end of the first power amplifier 101 is connected to the first transceiver end of the first RF switch 12, and the antenna end of the first RF switch 12 is connected to the first antenna group 14 to form a first transmission path for transmitting RF signals of the first frequency band;
[0050] The output end of the second power amplifier 102 is connected to the first transceiver end of the third RF switch 112, the antenna end of the third RF switch 112 is connected to the first transceiver end of the second RF switch 13, and the antenna end of the second RF switch 13 is connected to the second antenna group 15 to form a second transmission path for transmitting RF signals of the second frequency band;
[0051] The input end of the signal receiving device 111 is connected to the second transceiver end of the third RF switch 112, and the second antenna group 15 is connected through the third RF switch 112 and the second RF switch 13 to form a receiving path for receiving RF signals in a third frequency band; wherein the second frequency band and the third frequency band at least partially overlap;
[0052] The radio frequency device further includes a fourth radio frequency switch 16, and the output end of the second power amplifier 102 is grounded through the fourth radio frequency switch 16;
[0053] When the second power amplifier 102 is working, the fourth RF switch 16 is controlled to be turned off; when the reception signal processor 111 is working, the fourth RF switch 16 is controlled to be turned on, so that the harmonic components leaked from the first power amplifier 101 are conducted to the ground.
[0054] It should be noted that when the RF signal output by the second power amplifier needs to be transmitted on the second antenna group through the third RF switch inside the second RF front-end module, in order to reduce the interference of the harmonic components leaked from the first power amplifier on the received signal of the second RF front-end module, a grounding branch is added to the transmission path between the second power amplifier and the third RF switch, and a controllable fourth RF switch is configured on the branch to control the disconnection and conduction of the fourth RF switch so that the branch can be in a ground-cut-off state or a ground-connected state. When the second power amplifier needs to work, the switch is disconnected from the ground, and the RF signal output by the second power amplifier is output according to the original normal path; when in the CA\ENDC scenario, when the second power amplifier does not need to work, the switch is turned on to the ground, which can conduct the harmonic components leaked from the first power amplifier to the ground, and will not interfere with the received signal entering the second RF front-end module.
[0055] In some embodiments, the fourth RF switch is located outside the first RF front-end module and the second RF front-end module, or the fourth RF switch is located inside the first RF front-end module, or the fourth RF switch is located inside the second RF front-end module. Exemplarily, the fourth RF switch can be a single-pole single-throw switch or a single-pole multi-throw switch.
[0056] It should be noted that the first antenna group is a transceiver antenna group for radio frequency signals of the first frequency band, and the first antenna group includes at least one antenna. The second antenna group is a transceiver antenna group for radio frequency signals of the third frequency band (including the second frequency band), and the second antenna group includes at least one antenna.
[0057] It should be noted that the end of the RF switch close to the antenna is called the antenna end, and the end away from the antenna is called the transceiver end. The transceiver end can be used as a transmitter to connect with other devices to transmit RF signals, and the transceiver end can be used as a receiver to connect with other devices to receive RF signals. The transceiver end can also switch between the transmitter and the receiver.
[0058] In some embodiments, the first frequency band includes a low frequency band of at least one communication standard. The second frequency band includes a medium frequency band and / or a high frequency band of at least one communication standard, and the third frequency band includes a medium frequency band and / or a high frequency band of at least one communication standard. Exemplarily, the first frequency band includes a low frequency band of 2G\3G\4G, the second frequency band includes a high frequency band of 2G, and the third frequency band includes a medium and high frequency band of 3G\4G\5G.
[0059] In some embodiments, the first RF front-end module and the second RF front-end module are LPAMID devices that integrate devices such as a power amplifier (PA), a duplexer, and a low noise amplifier (LNA). The first RF front-end module can specifically support the transmission and reception of low-frequency signals of 2G\3G\4G, and the second RF front-end module can specifically support the transmission and reception of medium and high frequency signals of 3G\4G\5G. The first RF front-end module may include 2G\3G\4G LB PA and 2G HB PA. The second RF front-end module may include 3G\4G\5G MHB PA. In some embodiments, the first RF front-end module and the second RF front-end module may also include devices such as LNA, filters, and duplexers.
[0060] In some embodiments, the first RF front-end module and the second RF front-end module are powered simultaneously by one power module, or are powered separately by two power modules.
[0061] In some embodiments, the RF device further includes: at least one third RF front-end module; the first transceiver end of the third RF front-end module is connected to the second transceiver end of the first RF switch, connected to the first antenna group through the first RF switch, and used to receive and / or transmit RF signals in the first frequency band; the second transceiver end of the third RF front-end module is connected to the first transceiver end of the second RF switch, connected to the second antenna group through the second RF switch, and used to receive and / or transmit RF signals in the third frequency band. The third RF front-end module, the first RF front-end module, and the second RF front-end module share a power supply, or do not share a power supply.
[0062] Exemplarily, the third RF front-end module is used to process a received signal, or the third RF front-end module is used to process a transmitted signal, or the third RF front-end module is used to process a transmitted signal and a received signal.
[0063] The radio frequency device also includes: a radio frequency transceiver; the radio frequency transceiver is connected to the first radio frequency front-end module, the radio frequency transceiver is connected to the second radio frequency front-end module, and the radio frequency transceiver is connected to the third radio frequency front-end module.
[0064] Figure 5 Schematic diagram of the second structure of the radio frequency device in the embodiment of the present application. Figure 5 As shown, the radio frequency device includes: a radio frequency transceiver, a power supply IC, a LB LPAMID, a MHB LPAMID, a DiFEM module and other radio frequency modules.
[0065] The LB LPAMID has 3\4\5G LB PA, 2G LB PA and 2G HB PA, and the MHB LPAMID has 3\4\5G MHB PA.
[0066] Antennas 0-5 correspond to: low-frequency main reception (LB PRX) antenna, low-frequency diversity reception (LB DRX) antenna, MHBPRX antenna, MHB MIMO1 antenna, MHB DRX antenna, and MHB MIMO2 antenna.
[0067] The 0\1 antenna is connected to the LB LPAMID and is an LB antenna. The first RF switch ① can be a double-pole double-throw (DPDT) switch. The 2\3\4 antenna is connected to the MHB LPAMID and is an MHB antenna. The actual specific one of PRX\DRX\MIMO1 can be flexibly changed because the second RF switch ② here can be a 3P3T switch to achieve three-way switching. The 3P3T switch includes 3 transceiver terminals and 3 antenna terminals.
[0068] The 2G HB PA in the LB PAMID outputs a 2G HB TX signal, which goes to the inside of the MHB LPAMID, and then exits the MHB LPAMID through the internal third RF switch ③, and then goes to the 3P3T of the second RF switch ②, and finally to the MHB antenna. The purpose of this design is to save costs, and use the switch inside the MHB PAMID to switch the TX signal to the front-end antenna, because the frequency range of the 2GHB TX signal determines that it should use the MHB antenna for transmission.
[0069] A grounding branch is added to the transmission path between the 2G HB PA and the third RF switch ③, and a controllable fourth RF switch ④ is configured on the branch to control the disconnection and conduction of the fourth RF switch ④, so that the branch can be in a disconnected state or a connected state with respect to the ground. When the 2G HB is used, the switch is disconnected from the ground, and the 2G HB TX is output according to the original normal path; in the CA\ENDC scenario, when the 2G HB is not used, the switch is turned on to the ground, so that the LB harmonic component leaked from the LB LPAMID can be conducted to the ground, and will not interfere with the received signal entering the MHB LPAMID.
[0070] The DiFEM module is a hierarchical receiving module that integrates RF switches and filters. It is connected to antennas 0\1 through the first RF switch ① and to antennas 2\3\4 through the second RF switch ②.
[0071] The other RF modules indicated by the dotted box may also include a diversity receiving module, which is connected to antenna 0 or antenna 2\3\4 and antenna 5 to realize the RX signal receiving function. The power IC supplies power to two LPAMIDs at the same time, which is only one possible situation. In fact, the two LPAMIDs may not share the same power supply.
[0072] In CA or ENDC scenarios, LB LPAMID+MHB LPAMID works in combination, for example: LTE CA_8A-3A, NRCA_N8A-N3A, ENDC_28A-N41A, etc. Analyze the signal flow:
[0073] 1) 2\3\4\5G LB PA in LB LPAMID generates LB TX signal;
[0074] 2) The LB TX signal is passed through the path to the first RF switch ①, and can be transmitted on antenna 0\1 through the switch;
[0075] 3) LB RX signal can be received by 2RX by 0\1, and 2*2 MIMO can be realized by communicating with the base station;
[0076] 4) The 2G HB PA in the LB LPAMID generates a 2G HB TX signal;
[0077] 5) The fourth RF switch ④ is disconnected from the ground, and the 2G HB TX signal is transmitted to the third RF switch ③ and then to the second RF switch ② through switching, and can be transmitted on antennas 2\3\4; when the 2G HB is not used in the CA\ENDC scenario, the fourth RF switch ④ is turned on to the ground, and the LB harmonic component leaked from the LB LPAMID can be conducted to the ground, which will not interfere with the received signal entering the MHB LPAMID;
[0078] 6) MHB TX signal is generated by MHB LPAMID and enters the third RF switch ③;
[0079] 7) The MHB TX signal outputs MHB LPAMID through the third RF switch ③, and then passes through the path to the second RF switch ②. After switching, it can be transmitted on antenna 2\3\4;
[0080] 8) Antenna 5 is an MHB MIMO2 antenna, which can realize RX signal reception;
[0081] 9) Antenna 2\3\4\5 can communicate with the base station to achieve 4*4 MIMO.
[0082] The embodiment of the present application provides a radio frequency device, which adds a ground branch and a switch on the 2G HB TX path connected to the LB LPAMID and the MHB LPAMID. The switch will switch in the LB LPAMID+MHB LPAMID combined working scenario and the 2G working scenario, so that the harmonic components are conducted to the ground in the LB LPAMID+MHB LPAMID combined working scenario, rather than entering the MHB LPAMID, which improves the MHB LPAMID sensitivity when the LB LPAMID+ and MHB LPAMID coexist in many CA\ENDC scenarios, and also improves the throughput inflection point under the MIMO antenna, thereby improving the performance of the radio frequency device. At the same time, it does not affect the 2G HB work and does not increase the insertion loss.
[0083] The present application also provides another radio frequency device, such as Figure 6 As shown, the radio frequency device includes:
[0084] The radio frequency device includes: a first radio frequency front-end module 10, a second radio frequency front-end module 11, a first radio frequency switch 12, a second radio frequency switch 13, a first antenna group 14 and a second antenna group 15;
[0085] The first RF front-end module 10 includes a first power amplifier 101 and a second power amplifier 102; the second RF front-end module 11 includes a signal receiving device 111 and a third RF switch 112;
[0086] The output end of the first power amplifier 101 is connected to the first transceiver end of the first RF switch 12, and the antenna end of the first RF switch 12 is connected to the first antenna group 14 to form a first transmission path for transmitting RF signals of the first frequency band;
[0087] The output end of the second power amplifier 102 is connected to the second antenna group 15 through the second RF switch 13 to form a second transmission path for transmitting RF signals of the second frequency band;
[0088] The input end of the signal receiving device 111 is connected to the second antenna group 15 through the third RF switch 112 and the second RF switch 13 to form a receiving path for receiving RF signals in a third frequency band; wherein the second frequency band and the third frequency band at least partially overlap.
[0089] It should be noted that when the RF signal output by the second power amplifier is directly connected to the second antenna group through the second RF switch, disconnecting the connection between the first RF front-end module and the second RF front-end module, the harmonic components leaked from the first power amplifier will not enter the second RF front-end module through the second transmitting path, and can also reduce the interference of the harmonic components on the received signal of the second RF front-end module, thereby improving the sensitivity of the second RF front-end module.
[0090] In some embodiments, the second RF switch can be directly used to implement the switching of the TX signal to the front-end antenna. Exemplarily, the second RF switch includes at least two transceiver terminals, the output terminal of the second power amplifier is connected to the first transceiver terminal of the second RF switch, the input terminal of the signal receiving device is connected to the second transceiver terminal of the second RF switch through the third RF switch, and the antenna terminal of the second RF switch is connected to the second antenna group. For example, the second RF switch is replaced from a 3P3T switch to a 3P4T switch.
[0091] In some embodiments, the RF device further includes: a fifth RF switch; the output end of the second power amplifier is connected to the first transceiver end of the fifth RF switch, the input end of the signal receiving device is connected to the second transceiver end of the fifth RF switch through the third RF switch, and the antenna end of the fifth RF switch is connected to the first transceiver end of the second RF switch. In other words, a fifth RF switch can be added to realize the switching of the TX signal to the front-end antenna through the fifth RF switch and the second RF switch.
[0092] In some embodiments, the fifth RF switch includes at least two transceiver terminals. Exemplarily, the fifth RF switch is a single-pole double-throw switch, the first transceiver terminal and the second transceiver terminal of the fifth RF switch are two active terminals of the single-pole double-throw switch, and the antenna terminal of the fifth RF switch is a fixed terminal of the single-pole double-throw switch.
[0093] It should be noted that the RF switch in the embodiment of the present application may be a discrete switch or a combination of multiple discrete switches to achieve the switching function of each RF switch.
[0094] In some embodiments, the RF device further includes: at least one third RF front-end module; the first transceiver end of the third RF front-end module is connected to the second transceiver end of the first RF switch, connected to the first antenna group through the first RF switch, and used to receive and / or transmit RF signals in the first frequency band; the second transceiver end of the third RF front-end module is connected to the first transceiver end of the second RF switch, connected to the second antenna group through the second RF switch, and used to receive and / or transmit RF signals in the third frequency band. The third RF front-end module, the first RF front-end module and the first RF front-end module share a power supply, or do not share a power supply.
[0095] Exemplarily, the third RF front-end module is used to process a received signal, or the third RF front-end module is used to process a transmitted signal, or the third RF front-end module is used to process a transmitted signal and a received signal.
[0096] The radio frequency device also includes: a radio frequency transceiver; the radio frequency transceiver is connected to the first radio frequency front-end module, the radio frequency transceiver is connected to the second radio frequency front-end module, and the radio frequency transceiver is connected to the third radio frequency front-end module.
[0097] Figure 7Schematic diagram of the fourth structure of the radio frequency device in the embodiment of the present application. Figure 7 As shown, the radio frequency device includes: a radio frequency transceiver, a power supply IC, a LB LPAMID, a MHB LPAMID, a DiFEM module and other radio frequency modules.
[0098] The second RF switch ② can realize four-cut for the 4P3T switch, which includes 4 transceiver terminals and 3 antenna terminals. This allows the 2G HB TX signal to be connected to the second antenna and switch paths without entering the MHB LPAMID. In this way, the 2G HB TX signal can be transmitted to the MHB antenna for transmission, while disconnecting the connection between the LB PAMID and the MHB PAMID, so that harmonics cannot enter the MHB LPAMID.
[0099] It should be noted that the second RF switch ② may also be replaced by a combination of other discrete switches, that is, the switching function of the second RF switch ② is realized by multiple discrete switches.
[0100] Figure 8 Schematic diagram of the fifth structure of the radio frequency device in the embodiment of the present application. Figure 8 As shown, the radio frequency device includes: a radio frequency transceiver, a power supply IC, a LB LPAMID, a MHB LPAMID, a DiFEM module and other radio frequency modules.
[0101] The second RF switch ② can realize three-cut for a 3P3T switch, and the 3P3T switch includes three transceiver ends and three antenna ends.
[0102] A fifth RF switch ⑤ is added to the 2G HB PA output and the MHB LPAMID output in the LB PAMID. When 2GHB is used, the fifth RF switch ⑤ is controlled to switch the path so that the 2G HB TX signal enters the second RF switch ② from the fifth RF switch ⑤ and is transmitted on the 2\3\4 antennas. When 2G HB is not used, or when MHB LPAMID is used, the fifth RF switch ⑤ is controlled to switch the path so that the MHB LPAMID is connected to the 2\3\4 antennas.
[0103] In some embodiments, the radio frequency device further includes a fourth radio frequency switch, and the output end of the second power amplifier is grounded through the fourth radio frequency switch;
[0104] When the second power amplifier is working, the fourth radio frequency switch is controlled to be disconnected; when the receiving signal processor is working, the fourth radio frequency switch is controlled to be turned on, so that the harmonic components leaked from the first power amplifier are conducted to the ground.
[0105] In some embodiments, the fourth RF switch is located outside the first RF front-end module and the second RF front-end module, or the fourth RF switch is located inside the first RF front-end module, or the fourth RF switch is located inside the second RF front-end module. Exemplarily, the fourth RF switch can be a single-pole single-throw switch or a single-pole multi-throw switch.
[0106] Fig. 9 : is a sixth structural diagram of the radio frequency device in the embodiment of the present application, such as Fig. 9 As shown, a grounding branch is added to the transmission path between the 2G HB PA and the second RF switch ②, and a controllable fourth RF switch ④ is configured on the branch to control the disconnection and conduction of the fourth RF switch ④, so that the branch can be in a ground-cut state or a ground-connected state. When 2G HB is used, the switch is disconnected from the ground, and the 2G HB TX is output through ②; when in the CA\ENDC scenario, when 2G HB is not used, the switch is turned on to the ground, and the LB harmonic component leaked from the LB LPAMID can be conducted to the ground, which will not interfere with the received signal input to the MHB LPAMID through the second RF switch ②.
[0107] In some embodiments, it is also possible to Figure 8 In the radio frequency device shown, a grounding branch is added to the transmission path between the 2G HB PA and the fifth radio frequency switch ⑤, and a controllable fourth radio frequency switch ④ is configured on the branch.
[0108] The embodiment of the present application provides a radio frequency device, which disconnects the connection between the LB PAMID and the MHB PAMID, and controls the switching between the LB LPAMID+MHB LPAMID combined working scenario and the 2G working scenario through an external switch, so that the harmonic components do not enter the MHB LPAMID. Furthermore, a ground branch and a switch can be added to the 2G HB TX path, and the switch will switch between the LB LPAMID+MHB LPAMID combined working scenario and the 2G working scenario, further allowing the harmonic components to be conducted to the ground in the LBLPAMID+MHB LPAMID combined working scenario.
[0109] An embodiment of the present application also provides a terminal device, on which the radio frequency device in any of the above embodiments is provided. By providing the radio frequency device on the terminal device, the wireless communication performance of the terminal device is improved.
[0110] It should be understood that the terms used in the present application are only for the purpose of describing specific embodiments, but are not intended to limit the present application. The singular forms of "a", "said" and "the" used in the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used in this article refers to and includes any or all possible combinations of one or more associated listed items. The expressions "having", "may have", "include" and "include", or "may include" and "may include" in this application can be used to indicate the presence of corresponding features (e.g., elements such as numerical values, functions, operations or components), but the presence of additional features is not excluded.
[0111] It should be understood that although the terms first, second, third, etc. may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other and are not necessarily used to describe a specific order or sequence. For example, without departing from the scope of the present invention, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information.
[0112] The technical solutions described in the embodiments of the present application can be combined arbitrarily without conflict.
[0113] In the several embodiments provided in the present application, it should be understood that the disclosed methods, devices and equipment can be implemented in other ways. The embodiments described above are only schematic. For example, the division of units is only a logical function division. There may be other division methods in actual implementation, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of devices or units can be electrical, mechanical or other forms.
[0114] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.
[0115] In addition, all functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may be a separate unit, or two or more units may be integrated into one unit; the above-mentioned integrated units may be implemented in the form of hardware or in the form of hardware plus software functional units.
[0116] The above description is only a specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application.
Claims
1. A radio frequency device, characterized in that: The radio frequency device comprises: a first radio frequency front-end module, a second radio frequency front-end module, a first radio frequency switch, a second radio frequency switch, a first antenna group and a second antenna group; The first RF front-end module includes a first power amplifier and a second power amplifier; the second RF front-end module includes a signal receiving device and a third RF switch; The output end of the first power amplifier is connected to the first transceiver end of the first RF switch, and the antenna end of the first RF switch is connected to the first antenna group to form a first transmission path for transmitting RF signals of a first frequency band; The output end of the second power amplifier is connected to the first transceiver end of the third RF switch, the antenna end of the third RF switch is connected to the first transceiver end of the second RF switch, and the antenna end of the second RF switch is connected to the second antenna group to form a second transmission path for transmitting RF signals of a second frequency band; The input end of the signal receiving device is connected to the second transceiver end of the third RF switch, and the second antenna group is connected through the third RF switch and the second RF switch to form a receiving path for receiving RF signals in a third frequency band; wherein the second frequency band and the third frequency band at least partially overlap; The radio frequency device further includes a fourth radio frequency switch, and the output end of the second power amplifier is grounded through the fourth radio frequency switch; When the second power amplifier is working, the fourth radio frequency switch is controlled to be turned off; when the receiving signal processor is working, the fourth radio frequency switch is controlled to be turned on, so that the harmonic components leaked from the first power amplifier are conducted to the ground.
2. The radio frequency device according to claim 1, characterized in that: The fourth RF switch is located outside the first RF front-end module and the second RF front-end module, or the fourth RF switch is located inside the first RF front-end module, or the fourth RF switch is located inside the second RF front-end module.
3. The radio frequency device according to claim 1, characterized in that: The radio frequency device further comprises: at least one third radio frequency front-end module; The first transceiver end of the third RF front-end module is connected to the second transceiver end of the first RF switch, and is connected to the first antenna group through the first RF switch, and is used to receive and / or transmit RF signals in the first frequency band; The second transceiver end of the third RF front-end module is connected to the first transceiver end of the second RF switch, and is connected to the second antenna group through the second RF switch, for receiving and / or transmitting RF signals in the third frequency band.
4. The radio frequency device according to claim 3, characterized in that: The radio frequency device further comprises: a radio frequency transceiver; The RF transceiver is connected to the first RF front-end module, the RF transceiver is connected to the second RF front-end module, and the RF transceiver is connected to the third RF front-end module.
5. A radio frequency device, characterized in that: The radio frequency device comprises: a first radio frequency front-end module, a second radio frequency front-end module, a first radio frequency switch, a second radio frequency switch, a first antenna group and a second antenna group; The first RF front-end module includes a first power amplifier and a second power amplifier; the second RF front-end module includes a signal receiving device and a third RF switch; The output end of the first power amplifier is connected to the first transceiver end of the first RF switch, and the antenna end of the first RF switch is connected to the first antenna group to form a first transmission path for transmitting RF signals of a first frequency band; The output end of the second power amplifier is connected to the second antenna group through the second radio frequency switch to form a second transmission path for transmitting radio frequency signals in a second frequency band; The input end of the signal receiving device is connected to the second antenna group through the third RF switch and the second RF switch in sequence to form a receiving path for receiving RF signals in a third frequency band; wherein the second frequency band and the third frequency band at least partially overlap.
6. The radio frequency device according to claim 5, characterized in that: The output end of the second power amplifier is connected to the first transceiver end of the second RF switch, the input end of the signal receiving device is connected to the second transceiver end of the second RF switch through the third RF switch, and the antenna end of the second RF switch is connected to the second antenna group.
7. The radio frequency device according to claim 5, characterized in that: The radio frequency device further includes: a fifth radio frequency switch; The output end of the second power amplifier is connected to the first transceiver end of the fifth RF switch, the input end of the signal receiving device is connected to the second transceiver end of the fifth RF switch through the third RF switch, and the antenna end of the fifth RF switch is connected to the first transceiver end of the second RF switch.
8. The radio frequency device according to claim 7, characterized in that: The fifth RF switch is a single-pole double-throw switch, the first transceiver end and the second transceiver end of the fifth RF switch are two active ends of the single-pole double-throw switch, and the antenna end of the fifth RF switch is a fixed end of the single-pole double-throw switch.
9. The radio frequency device according to any one of claims 5 to 8, characterized in that: The radio frequency device further includes a fourth radio frequency switch, and the output end of the second power amplifier is grounded through the fourth radio frequency switch; When the second power amplifier is working, the fourth radio frequency switch is controlled to be turned off; when the receiving signal processor is working, the fourth radio frequency switch is controlled to be turned on, so that the harmonic components leaked from the first power amplifier are conducted to the ground.
10. A terminal device, characterized in that: The terminal device comprises the radio frequency device according to any one of claims 1 to 9.