Bismuth scandate-lead zirconate titanate piezoelectric ceramic, preparation method thereof and piezoelectric device

Abstract

The invention relates to bismuth scandate-lead zirconate titanate piezoelectric ceramic, a preparation method thereof and a piezoelectric device. The chemical general formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic is t (0.36 BS-0. 64PT)-(1-t) (0.52 PZ-0. 48PT), t is larger than or equal to 0.05 and smaller than or equal to 0.3, and t is a molar ratio. The novel ternary system t (0.36 BS-0. 64 PT)-(1-t) (0.52 PZ-0. 48 PT) piezoelectric ceramic is obtained by adding BS as a third component into a PZT system, the series of ceramics are simple to prepare and stable in formula, the Curie temperature is higher than 480 DEG C, and the problem of poor temperature stability of commercial piezoelectric ceramics is well solved. In addition, the invention also relates to a preparation method of the bismuth scandate-lead zirconate titanate piezoelectric ceramic, and a piezoelectric device comprising the bismuth scandate-lead zirconate titanate piezoelectric ceramic.

Description

Technical Field

[0001] The invention relates to the technical field of piezoelectric ceramics, and in particular to a bismuth scandate-lead zirconate titanate piezoelectric ceramic, a preparation method thereof, and a piezoelectric device. Background Art

[0002] With the development of modern science and technology, drivers and sensors are developing towards miniaturization. In practical applications, the performance requirements for these sensors and electronic devices are also constantly increasing, especially for materials used in aerospace, weapons and equipment, information communication, detection and some high-end equipment. They are required to have high sensitivity and reliability in high temperature environments, which poses new challenges to these materials. In recent years, high-temperature piezoelectric ceramic materials have become one of the research hotspots at home and abroad due to their novelty, broad application prospects and importance in industrial production. In practical applications, when the temperature rises, the piezoelectric material will be depolarized, resulting in the deterioration or even disappearance of its piezoelectricity, and the sensitivity of the piezoelectric device will be reduced or fail, which will bring troubles or unnecessary losses to actual production and life. Therefore, the safe use temperature of general piezoelectric ceramic devices is generally limited to less than half of its Curie temperature (Tc). In order to overcome these limitations, the research on high-temperature piezoelectric ceramics is committed to the development of new piezoelectric materials to meet the needs of high-temperature applications. These new materials usually need to have a higher piezoelectric constant and a high Curie temperature, and can maintain stable performance under high temperature conditions. Summary of the invention

[0003] Based on this, it is necessary to provide a bismuth scandate-lead zirconate titanate piezoelectric ceramic and a preparation method and a piezoelectric device thereof in order to solve the problem of how to maintain temperature stability.

[0004] A bismuth scandate-lead zirconate titanate piezoelectric ceramic, the general chemical formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic is: t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT), wherein 0.05≤t≤0.3, and t is a molar ratio.

[0005] The present invention adds a BS as the third component into the PZT system to obtain a new ternary system t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT) piezoelectric ceramic. This series of ceramics is simple to prepare and has a stable formula. The Curie temperature is higher than 480°C, which effectively solves the problem of poor temperature stability of commercial piezoelectric ceramics.

[0006] In a feasible implementation, the general chemical formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic is: t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT), wherein t is 0.05, 0.1, 0.2 or 0.3.

[0007] A method for preparing bismuth scandate-lead zirconate titanate piezoelectric ceramics comprises the following steps:

[0008] Based on the stoichiometric ratio of the chemical formula t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT), where 0.05≤t≤0.3, and t is a molar ratio, PbO powder, ZrO2 powder, TiO2 powder, Bi2O3 powder, and Sc2O3 powder are uniformly mixed, dried, and pre-sintered to obtain pre-sintered powder after sufficient reaction;

[0009] Granulating the pre-calcined powder, and then pressing and molding to obtain a ceramic green sheet; and

[0010] The ceramic green sheet is subjected to a debinding process and a sintering process to obtain a bismuth scandate-lead zirconate titanate piezoelectric ceramic.

[0011] The preparation method of the bismuth scandate-lead zirconate titanate piezoelectric ceramics of the technical solution of the present invention is simple in process, and the Curie temperature of the bismuth scandate-lead zirconate titanate piezoelectric ceramics prepared by the above preparation method is higher than 480°C, which well solves the problem of poor temperature stability of commercial piezoelectric ceramics.

[0012] In a feasible implementation, during the process of uniformly mixing PbO powder, ZrO2 powder, TiO2 powder, Bi2O3 powder and Sc2O3 powder, 0.5 wt.% excess Bi2O3 powder and PbO powder are added.

[0013] In a feasible implementation, the temperature of the pre-sintering treatment is 800° C. to 900° C., the time of the pre-sintering treatment is 2 h to 3 h, and the heating rate of the pre-sintering treatment is 5° C. / min to 10° C. / min.

[0014] In a feasible implementation, before the pre-calcined powder is granulated, the following step is further included: the pre-calcined powder is ball-milled at a rotation speed of 250 r / min to 300 r / min for 16 h to 20 h.

[0015] In a feasible implementation, the granulation operation is: mixing the pre-burned powder and the binder evenly, and then passing through a 100-mesh sieve; wherein the mass percentage of the binder is 5% to 8%.

[0016] In a feasible implementation, the temperature of the debonding treatment is 600°C to 700°C, the holding time of the debonding treatment is 4h to 5h, and the heating rate is 1°C / min to 3°C / min;

[0017] The temperature of the sintering treatment is 1100° C. to 1150° C., the heat preservation time of the sintering treatment is 2 h to 3 h, and the heating rate is 5° C. / min to 8° C. / min.

[0018] In a feasible implementation, the process further includes silver coating and polarization steps.

[0019] A piezoelectric device comprises the above-mentioned bismuth scandate-lead zirconate titanate piezoelectric ceramic or the bismuth scandate-lead zirconate titanate piezoelectric ceramic prepared by any of the above-mentioned preparation methods of the bismuth scandate-lead zirconate titanate piezoelectric ceramic.

[0020] The piezoelectric device of the technical solution of the present invention includes the above-mentioned bismuth scandate-lead zirconate titanate piezoelectric ceramics. This series of ceramics are simple to prepare and have a stable formula. The Curie temperature is higher than 480°C, which effectively solves the problem of poor temperature stability of commercial piezoelectric ceramics. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a flow chart of a method for preparing bismuth scandate-lead zirconate titanate piezoelectric ceramics according to one embodiment of the present invention;

[0022] Figure 2 The XRD diagram of the ceramic sample obtained in step (7) of Examples 1 to 4 of the present invention;

[0023] Figure 3 The dielectric temperature spectra of the piezoelectric ceramics obtained in Examples 1 to 4 of the present invention are shown. DETAILED DESCRIPTION

[0024] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0026] The chemical formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic of one embodiment is: t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT) (abbreviated as tBS-PZT), wherein 0.05≤t≤0.3, t is a molar ratio, and t can be any value between 0.05 and 3.

[0027] In the chemical formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic of the above-mentioned embodiment, BS represents BiScO3, and its Chinese name is bismuth scandate; PT represents PbTiO3, and its Chinese name is lead titanate; PZ represents PbZrO3, and its Chinese name is lead zirconate.

[0028] Based on the above-mentioned implementation mode, the general chemical formula of bismuth scandate-lead zirconate titanate piezoelectric ceramic is: t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT), wherein t is 0.05, 0.1, 0.2 or 0.3. When t is 0.05, the chemical formula of bismuth scandate-lead zirconate titanate piezoelectric ceramics is 0.018BS-0.494PZ-0.488PT; when t is 0.1, the chemical formula of bismuth scandate-lead zirconate titanate piezoelectric ceramics is 0.036BS-0.468PZ-0.496PT; when t is 0.2, the chemical formula of bismuth scandate-lead zirconate titanate piezoelectric ceramics is 0.072BS-0.416PZ-0.512PT; when t is 0.3, the chemical formula of bismuth scandate-lead zirconate titanate piezoelectric ceramics is 0.108BS-0.364PZ-0.528PT. The Curie temperatures of these new materials are all higher than 480°C, which solves the problem of poor temperature stability of commercial piezoelectric ceramics. And when t=0.1, the piezoelectric constant of bismuth scandate-lead zirconate titanate piezoelectric ceramic is as high as 336pC / N, which is conducive to maintaining stable piezoelectric properties at higher temperatures and providing reliable sensing, control and driving functions.

[0029] The present invention adds a BS as the third component to the PZT system to obtain a new ternary system t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT) piezoelectric ceramic. This series of ceramics is simple to prepare and has a stable formula. The Curie temperature is higher than 480°C, which solves the problem of poor temperature stability of commercial piezoelectric ceramics. The bismuth scandate-lead zirconate titanate piezoelectric ceramics of the technical solution of the present invention are not prone to thermal runaway problems when facing high power and high temperature environments, and can maintain good performance and reliability; they also have a wide operating temperature range and can adapt to different temperature environments, improving the flexibility and applicability of applications.

[0030] See also Figure 1 A method for preparing a bismuth scandate-lead zirconate titanate piezoelectric ceramic according to an embodiment of the present invention comprises the following steps:

[0031] S10. Based on the stoichiometric ratio of the general chemical formula t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT), wherein 0.05≤t≤0.3 and t is the molar ratio, PbO powder, ZrO2 powder, TiO2 powder, Bi2O3 powder and Sc2O3 powder are uniformly mixed, dried and pre-sintered to obtain pre-sintered powder after sufficient reaction.

[0032] In step S10, the purity of PbO powder is >99.9%, the purity of ZrO2 powder is >99.99%, the purity of TiO2 powder is >99.0%, the purity of Bi2O3 powder is >99.99%, and the purity of Sc2O3 powder is >99.99%, so as to avoid the generation of impurities.

[0033] In a feasible implementation, 0.5 wt.% excess Bi2O3 powder and PbO powder are added during the process of uniformly mixing PbO powder, ZrO2 powder, TiO2 powder, Bi2O3 powder and Sc2O3 powder, so as to compensate for the volatilization of bismuth and lead during the pre-sintering and sintering process.

[0034] The operation of mixing the raw materials uniformly is as follows: using anhydrous ethanol as the ball milling medium, ball milling for 12 hours to 20 hours on a planetary ball mill (speed of 250 r / min to 300 r / min) to fully crush and mix the raw materials. The mixed slurry is dried in an oven.

[0035] In a feasible implementation, the temperature of the pre-sintering treatment is 800° C. to 900° C., the time of the pre-sintering treatment is 2 h to 3 h, and the heating rate of the pre-sintering treatment is 5° C. / min to 10° C. / min.

[0036] S20, granulating the pre-calcined powder obtained in step S10, and then pressing and molding to obtain a ceramic green sheet.

[0037] In a feasible implementation, before granulating the pre-burned powder, the following steps are also included: ball milling the pre-burned powder at a speed of 250 r / min to 300 r / min for 16 h to 20 h. Specifically, the pre-burned powder is placed in an agate grinding mortar and ground manually with an agate rod, and then placed in a ball mill containing an alcohol medium for secondary ball milling, and then dried after ball milling.

[0038] In a feasible implementation, the granulation operation is: the pre-calcined powder is mixed with the binder evenly, and then passed through a 100-mesh screen; wherein the binder has a mass percentage of 5% to 8%. The binder can be, but is not limited to, a 5wt.% polyvinyl alcohol (PVA) solution.

[0039] Furthermore, the operation of compression molding may be, but is not limited to, pressing the embryo into a disc-shaped embryo with a diameter of 13 mm and a thickness of 1 mm at a pressure of 200 MPa.

[0040] S30, performing a debinding process and a sintering process on the ceramic green sheet obtained in step S20 to obtain a bismuth scandate-lead zirconate titanate piezoelectric ceramic.

[0041] In a feasible implementation, the temperature of the debinding treatment is 600°C to 700°C, the holding time of the debinding treatment is 4h to 5h, and the heating rate is 1°C / min to 3°C / min, so as to remove the binder added during granulation.

[0042] In a feasible implementation, the sintering temperature is 1100° C. to 1150° C., the sintering holding time is 2 h to 3 h, and the heating rate is 5° C. / min to 8° C. / min. During sintering, the powders of the same components are buried and sintered in an alumina crucible.

[0043] In a feasible implementation, it also includes the steps of silver coating and polarization. The silver coating operation is as follows: grind and polish the surface of the sintered ceramic sheet, apply silver paste on the upper and lower surfaces, place it in a muffle furnace, heat it to 700℃~750℃ at a heating rate of 510℃ / min and keep it warm for 20min~30min, and naturally cool it to room temperature. The polarization operation is as follows: place the silvered sample in silicone oil, apply an electric field of 30kV / cm~35kV / cm, and polarize for 20min~30min.

[0044] The preparation method of the bismuth scandate-lead zirconate titanate piezoelectric ceramics of the technical solution of the present invention is simple in process, and the Curie temperature of the bismuth scandate-lead zirconate titanate piezoelectric ceramics prepared by the above preparation method is higher than 480°C, which well solves the problem of poor temperature stability of commercial piezoelectric ceramics.

[0045] A piezoelectric device according to one embodiment includes the above-mentioned bismuth scandate-lead zirconate titanate piezoelectric ceramic or a bismuth scandate-lead zirconate titanate piezoelectric ceramic prepared by any of the above-mentioned methods for preparing bismuth scandate-lead zirconate titanate piezoelectric ceramics.

[0046] The piezoelectric device of the technical solution of the present invention includes the above-mentioned bismuth scandate-lead zirconate titanate piezoelectric ceramics. This series of ceramics are simple to prepare and have a stable formula. The Curie temperature is higher than 480°C, which effectively solves the problem of poor temperature stability of commercial piezoelectric ceramics.

[0047] With reference to the above implementation contents, in order to make the technical solution of the present invention more specific, clear and easy to understand, the technical solution of the present invention is now exemplified. However, it should be noted that the contents to be protected by the present invention are not limited to the following embodiments.

[0048] Example 1 (t=0.05)

[0049] Embodiment 1 provides a bismuth scandate-lead zirconate titanate piezoelectric ceramic and a preparation method thereof. The chemical formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic is 0.018BS-0.494PZ-0.488PT. The preparation method comprises the following steps:

[0050] (1) Ingredients: PbO powder (purity of 99.9% or more), ZrO2 (purity of 99.99% or more), TiO2 (purity of 99.0% or more), Bi2O3 (purity of 99.99% or more) and Sc2O3 (purity of 99.99% or more) are used as raw materials, and the materials are weighed and proportioned based on the chemical formula 0.018BS-0.494PZ-0.488PT, and 0.5wt.% excess Bi2O3 and PbO are added to compensate for the volatilization of bismuth and lead during pre-sintering and sintering. Specifically, 14.5157g of PbO powder, 2.6477g of ZrO2 powder, 2.5708g of TiO2 powder, 0.2777g of Bi2O3 powder and 0.0817g of Sc2O3 powder are weighed.

[0051] (2) Ball milling: The mixture is milled in a planetary ball mill for 12 h (at a speed of 250 r / min) using anhydrous ethanol as the ball milling medium to fully crush and mix the raw materials. The mixed slurry is dried in an oven.

[0052] (3) Pre-sintering: The ground powder is placed in a metal mold with a diameter of 30 mm and pressed into blocks using a press. The pre-sintering temperature is set to 850 °C, the heating rate is 5 °C per minute, and the pre-sintering time is 2 h to obtain a pre-sintered powder.

[0053] (4) Secondary ball milling: The pre-calcined powder is placed in an agate grinding mortar and ground manually with an agate rod, and then placed in a ball mill containing an alcohol medium for secondary ball milling. The rotation speed is still maintained at 250 r / min, and the secondary ball milling time is changed to 16 h.

[0054] (5) Granulation and tableting: The pre-calcined powder obtained in step (4) is ball-milled and dried for a second time, and 5 wt% polyvinyl alcohol solution is added and ground evenly, and then granulated, passed through a 100-mesh sieve, and pressed at a pressure of 200 MPa into a disc-shaped embryo with a diameter of 13 mm and a thickness of 1 mm.

[0055] (6) Debinding: Heating the temperature to 600°C at a rate of 1°C / min and keeping the temperature for 5 h.

[0056] (7) Sintering: The temperature is raised to 1100°C at a rate of 5°C / min. After two hours of holding, the temperature is lowered to 800°C at a rate of 5°C / min. The mixture is then cooled to room temperature in the furnace. During sintering, the powder of the same component is buried in an alumina crucible and fired.

[0057] (8) Silver coating: The surface of the sintered ceramic sheet was polished, and silver paste was applied on the upper and lower surfaces. The sheet was placed in a muffle furnace and heated to 700°C at a rate of 5°C / min, kept at this temperature for 20 min, and then cooled naturally to room temperature.

[0058] (9) Polarization: The silvered sample was placed in silicone oil and an electric field of 30 kV / cm was applied for polarization for 20 min.

[0059] Example 2 (t=0.1)

[0060] Example 2 provides a bismuth scandate-lead zirconate titanate piezoelectric ceramic and a preparation method thereof. The general chemical formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic is 0.036BS-0.468PZ-0.496PT. The preparation method differs from the preparation method of Example 1 only in that the raw material ratio is different. In step (1), 14.2524g PbO powder, 2.5089g ZrO2 powder, 2.6135g TiO2 powder, 0.5556g Bi2O3 powder and 0.1635g Sc2O3 powder are weighed.

[0061] Example 3 (t=0.2)

[0062] Example 3 provides a bismuth scandate-lead zirconate titanate piezoelectric ceramic and a preparation method thereof. The general chemical formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic is 0.072BS-0.416PZ-0.512PT. The preparation method differs from the preparation method of Example 1 only in that the raw material ratio is different. In step (1), 13.7256 g PbO powder, 2.2310 g ZrO2 powder, 2.6989 g TiO2 powder, 1.1171 g Bi2O3 powder and 0.3271 g Sc2O3 powder are weighed.

[0063] Example 4 (t=0.3)

[0064] Example 4 provides a bismuth scandate-lead zirconate titanate piezoelectric ceramic and a preparation method thereof. The general chemical formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic is 0.108BS-0.364PZ-0.528PT. The preparation method differs from the preparation method of Example 1 only in that the raw material ratio is different. In step (1), 13.1984g PbO powder, 1.9529g ZrO2 powder, 2.7843g TiO2 powder, 1.6763g Bi2O3 powder and 0.4908g Sc2O3 powder are weighed.

[0065] Performance Test:

[0066] (1) The ceramic samples obtained in step (7) of Examples 1 to 4 were subjected to XRD test. Figure 2 As shown. Figure 2It can be seen that there are no impurity peaks other than the main peak showing a pure perovskite structure.

[0067] (2) The piezoelectric ceramic samples obtained in Examples 1 to 4 were left to stand at room temperature for 24 hours and then their electrical properties were tested. The test method was as follows. The test results are shown in Tables 1 and Figure 3 shown.

[0068] Test method: through quasi-static d 33 The tester tests the piezoelectric constant d 33 , the electromechanical coupling coefficient k is obtained by impedance analyzer 4294 p , dielectric constant ε r and Curie temperature T c .

[0069] Table 1 Performance data of piezoelectric ceramics of Examples 1 to 4

[0070] Components <![CDATA[d 33 (pC / N)]]> <![CDATA[k p ]]> <![CDATA[T c (℃)]]> εr Example 1 (x=0.05) 262 0.48 487 1124 Example 2 (x=0.1) 336 0.54 488 1350 Example 3 (x=0.2) 288 0.46 500 926 Example 4 (x=0.3) 241 0.42 516 563

[0071] Combining Table 1 and Figure 3 It can be seen that the Curie temperatures of the piezoelectric ceramics of Examples 1 to 4 are all higher than 480° C., which well solves the problem of poor temperature stability of commercial piezoelectric ceramics. The highest peak corresponding temperature of the piezoelectric ceramic of Example 4 is the Curie temperature (T c ) exceeds 500℃, greatly improving the operating temperature range.

[0072] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0073] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A bismuth scandate-lead zirconate titanate piezoelectric ceramic, characterized in that: The general chemical formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic is: t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT), wherein 0.05≤t≤0.3, and t is the molar ratio.

2. The bismuth scandate-lead zirconate titanate piezoelectric ceramic according to claim 1, characterized in that: The general chemical formula of the bismuth scandate-lead zirconate titanate piezoelectric ceramic is: t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT), wherein t is 0.05, 0.1, 0.2 or 0.

3.

3. A method for preparing bismuth scandate-lead zirconate titanate piezoelectric ceramics, characterized in that: The steps include: Based on the stoichiometric ratio of the chemical formula t(0.36BS-0.64PT)-(1-t)(0.52PZ-0.48PT), where 0.05≤t≤0.3, and t is a molar ratio, PbO powder, ZrO2 powder, TiO2 powder, Bi2O3 powder, and Sc2O3 powder are uniformly mixed, dried, and pre-sintered to obtain pre-sintered powder after sufficient reaction; Granulating the pre-calcined powder, and then pressing and molding to obtain a ceramic green sheet; as well as The ceramic green sheet is subjected to a debinding process and a sintering process to obtain a bismuth scandate-lead zirconate titanate piezoelectric ceramic.

4. The method for preparing the bismuth scandate-lead zirconate titanate piezoelectric ceramic according to claim 3, characterized in that: During the process of uniformly mixing PbO powder, ZrO2 powder, TiO2 powder, Bi2O3 powder and Sc2O3 powder, 0.5 wt.% excess Bi2O3 powder and PbO powder are added.

5. The method for preparing the bismuth scandate-lead zirconate titanate piezoelectric ceramic according to claim 3, characterized in that: The temperature of the pre-sintering treatment is 800° C. to 900° C., the time of the pre-sintering treatment is 2 h to 3 h, and the heating rate of the pre-sintering treatment is 5° C. / min to 10° C. / min.

6. The method for preparing the bismuth scandate-lead zirconate titanate piezoelectric ceramic according to claim 3, characterized in that: Before the pre-burned powder is granulated, the method further comprises the following steps: ball milling the pre-burned powder at a rotation speed of 250 r / min to 300 r / min for 16 h to 20 h.

7. The method for preparing bismuth scandate-lead zirconate titanate piezoelectric ceramic according to claim 3, characterized in that: The granulation operation is: the pre-burned powder is mixed with the binder evenly, and then passed through a 100-mesh screen; wherein the mass percentage of the binder is 5% to 8%.

8. The method for preparing bismuth scandate-lead zirconate titanate piezoelectric ceramic according to claim 3, characterized in that: The temperature of the debonding treatment is 600°C to 700°C, the holding time of the debonding treatment is 4h to 5h, and the heating rate is 1°C / min to 3°C / min; The temperature of the sintering treatment is 1100° C. to 1150° C., the heat preservation time of the sintering treatment is 2 h to 3 h, and the heating rate is 5° C. / min to 8° C. / min.

9. The method for preparing bismuth scandate-lead zirconate titanate piezoelectric ceramic according to claim 3, characterized in that: Silver coating and polarization steps are also included.

10. A piezoelectric device, characterized in that: The invention relates to a bismuth scandate-lead zirconate titanate piezoelectric ceramic according to claim 1 or 2, or a bismuth scandate-lead zirconate titanate piezoelectric ceramic prepared by the preparation method of the bismuth scandate-lead zirconate titanate piezoelectric ceramic according to any one of claims 3 to 9.

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