Deposition apparatus and passivation method of substrate

Abstract

The invention discloses a deposition apparatus and a passivation method of a substrate. The deposition equipment comprises an equipment main body, a slide glass boat and an infrared heater. The equipment body is provided with a process cavity. The slide glass boat is arranged in the process cavity, the slide glass boat is provided with an accommodating cavity for accommodating a substrate, and at least one surface of the substrate is covered by the slide glass boat; the infrared heater is opposite to one surface of the slide glass boat and is arranged at an interval, a process channel for process gas to flow through is arranged between the infrared heater and the slide glass boat, and the infrared heater is used for heating the uncovered side surface of the substrate. In this way, the side face, needing to be coated, of the substrate can be heated in a targeted mode.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a deposition device and a substrate passivation method. Background Art

[0002] In the semiconductor field, a whole substrate can be cut into half or multiple small substrates. The surface after cutting has serious surface defects, and surface treatment is required to reduce the charge recombination of the cut surface. In the related art, the surface defects after cutting are improved by heating the stacked substrates and then coating them for passivation. However, the related equipment heats the entire substrate. If the cut surface needs to be heated to the process temperature, a long preheating and heat conduction process is required. Summary of the invention

[0003] The embodiments of the present application provide a deposition device and a substrate passivation method, which can achieve targeted heating of the side of the substrate that needs to be coated.

[0004] In a first aspect, an embodiment of the present application provides a deposition device. The deposition device includes a device body, a wafer carrier boat, and an infrared heater. The device body has a process chamber. The wafer carrier boat is disposed in the process chamber, and the wafer carrier boat has a receiving cavity for receiving a substrate, and the wafer carrier boat covers at least one side of the substrate. The infrared heater is opposite to one side of the wafer carrier boat and is spaced apart, and a process channel for process gas to flow through is provided between the infrared heater and the wafer carrier boat, and the infrared heater is used to heat the side of the substrate that is not covered.

[0005] Optionally, the deposition device further includes a carrier having an installation cavity, the carrier can be detachably installed in the process chamber, the wafer boat is arranged in the installation cavity, and the infrared heater is installed on the carrier.

[0006] Optionally, the substrates in the wafer boat are stacked, and the side surfaces of the stacked substrates to be coated are exposed to the process channel, and the other sides of the stacked substrates are covered by the wafer boat.

[0007] Optionally, a plurality of carriers are arranged in the process chamber, and the process channels are connected in parallel or in series;

[0008] Alternatively, a plurality of wafer boats are arranged in the installation cavity, and the infrared heaters respectively form process channels with the wafer boats, and the process channels are connected in parallel or in series.

[0009] Optionally, the wafer boat is detachably installed in the process chamber, and the infrared heater is installed in the process chamber.

[0010] Optionally, a plurality of wafer boats are disposed in the mounting cavity, and the plurality of infrared heaters respectively form process channels with the wafer boats, and the process channels are connected in parallel or in series.

[0011] Optionally, a plurality of infrared heaters are arranged at intervals in the process chamber, and a mounting cavity for mounting a wafer boat is formed between the infrared heaters; the wafer boat can be detachably mounted in the mounting cavity.

[0012] Optionally, the deposition equipment further includes a shower plate and a negative pressure pump, and the shower plate and the negative pressure pump are respectively connected to the process channel.

[0013] Optionally, the deposition device further comprises a door body, the spray plate is arranged on the door body and when the door body is closed, the spray plate is arranged corresponding to the process channel.

[0014] Optionally, the deposition device further comprises a chamber heater, which is installed on the device body and is used to heat the process chamber.

[0015] In a second aspect, an embodiment of the present application provides a substrate passivation method. The method comprises:

[0016] Extraction: extract the gas in the process chamber to maintain a sufficient vacuum degree in the process chamber;

[0017] Purge: introduce inert protective gas to purge impurities in the process chamber;

[0018] Preheating: turn on the infrared heater to preheat the substrate;

[0019] Passivation, introducing process gas into the process channel to coat the unmasked side of the substrate; at the same time, maintaining the temperature of the infrared heater at a preset temperature;

[0020] Annealing, increase the power of the infrared heater, maintain the temperature of the infrared heater at 600-1700°C, heat the substrate to the annealing temperature and then turn off the infrared heater;

[0021] Break the air, introduce inert protective gas into the process chamber, and restore the air pressure in the process chamber;

[0022] Transfer, transfer and cool the substrate.

[0023] Optionally, in the preheating step, the temperature of the infrared heater is at 280-650°C;

[0024] During the passivation step, the temperature of the infrared heater is maintained at 280-650°C 。

[0025] Optionally, the deposition device further comprises a chamber heater, which is mounted on the device body and is used to heat the process chamber;

[0026] During the preheating step, the method further includes turning on a cavity heating element;

[0027] During the annealing step, the method further includes reducing the temperature of the chamber heater or turning off the chamber heater;

[0028] In the transfer step, the method further comprises, after taking out the substrate, turning on the chamber heating element.

[0029] The beneficial effect of the present application is that, different from the prior art, by setting the infrared heater opposite to one side of the wafer carrier boat, the surface of the substrate that needs to be coated can be heated by the infrared heater. The process channel formed by the infrared heater and the wafer carrier boat can allow the process gas to flow through the part of the substrate that needs to be coated directly, and reduce the process gas flowing through other positions, thereby reducing the consumption of process gas. Furthermore, the infrared heater heats by infrared rays, and the area directly irradiated by infrared rays has a higher heating rate, while the area that cannot be irradiated by infrared rays has a lower heating rate, so that the deposition equipment can well meet the annealing requirements and reduce the adhesion caused by heating on the surface of the substrate that does not need to be coated. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a schematic diagram of the structure of the deposition device of the present application;

[0031] Figure 2 is a structural schematic diagram of a specific embodiment of the deposition device of the present application;

[0032] Figure 3 yes Figure 2 Schematic diagram of the exploded structure of the vehicle shown in;

[0033] Figure 4 yes Figure 2 A schematic diagram of the cross-sectional structure of a deposition device;

[0034] Figure 5 is a structural schematic diagram of another specific embodiment of the deposition device of the present application;

[0035] Figure 6 yes Figure 5 A schematic cross-sectional structure diagram of the deposition device shown;

[0036] Figure 7 It is a schematic diagram of the process of the substrate passivation method of the present application.

[0037] Reference numerals:

[0038] Deposition equipment, 1; equipment body, 11; door body, 12; spray plate, 121; carrier, 13; installation cavity, 14; wafer boat, 15; infrared heater, 16; process channel, 17; negative pressure pump, 18; cavity heating element, 19. DETAILED DESCRIPTION

[0039] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0040] In the semiconductor field, a whole substrate can be cut into half or multiple small substrates. There are serious surface defects on the surface after cutting, and surface treatment is required to reduce the charge recombination of the cut surface. In the related art, the surface of the substrate after cutting can be passivated to improve the performance of the substrate. The requirement for passivation is to coat a passivation film on the cut surface or edge. This film needs to be annealed at a higher temperature, and it cannot be heated for a long time to avoid the center temperature of the substrate from rising too high and causing the substrate to stick. Ordinary heating annealing heats up slowly and cannot meet the requirements of high temperature at the edge and low temperature at the center. When using an infrared heater, the surface of the infrared heater is coated during the coating process, resulting in a problem of reduced efficiency of the infrared heater. The related art adopts a solution of separating the coating chamber and the annealing chamber. This solution is complex in structure, high in cost, and has the possibility of pollution. In addition, it is necessary to increase the annealing chamber and the handling mechanism, and it is difficult to ensure that the coating annealing is carried out under vacuum, which will increase the possibility of substrate contamination during the handling process. In order to improve the above technical problems, the present application can provide the following embodiments.

[0041] Combination Figure 1 The embodiment of the present application provides a deposition device 1. The deposition device 1 includes a device body 11, a wafer boat 15 and an infrared heater 16. The device body 11 has a process chamber. The process chamber can be used to place the wafer boat 15 and the infrared heater 16. The process chamber can isolate the internal components from the air, thereby reducing the contamination of the air to the coating.

[0042] The wafer boat 15 is disposed in the process chamber, and the wafer boat 15 has a holding cavity for holding the substrate. On the one hand, the wafer boat 15 allows at least one side of the substrate that needs to be coated to be exposed. On the other hand, the wafer boat 15 covers at least one side of the substrate. In addition to carrying the substrate, the wafer boat 15 can also selectively expose the surface of the substrate that needs to be coated, and cover the surface of the substrate that does not need to be coated, so that the surface that needs to be coated can contact with the process gas, and the surface that needs to be coated can be heated to a sufficient temperature by the infrared heater 16. At the same time, it can also reduce the contact between the surface that does not need to be coated and the process gas, and reduce the part of the substrate that does not need to be coated from being heated to a higher temperature by the infrared heater 16.

[0043] The infrared heater 16 is arranged opposite to at least one side of the wafer carrier boat 15 and spaced apart. The infrared heater 16 is used to heat the side of the substrate that is not covered. Since the infrared heater 16 heats the substrate by infrared rays, it has a higher heating efficiency for the surface that can be directly irradiated by the infrared rays, and has a relatively lower heating efficiency for the surface that cannot be directly irradiated by the infrared rays. By using the infrared heater 16 to be arranged opposite to the wafer carrier boat 15, the surface of the substrate opposite to the infrared heater 16 can be quickly heated up to meet the process requirements, and the heating rate of the surface of the substrate covered by the wafer carrier boat 15 or due to stacking is reduced, thereby reducing the adhesion of the substrate caused by high temperature while satisfying the condition of passivation of the cut surface of the substrate. On the other hand, since the infrared heater 16 has the aforementioned good local heating performance, the infrared heater 16 can be arranged to conveniently anneal the coated substrate.

[0044] The deposition device 1 proposed in the embodiment of the present application, by providing an infrared heater 16, can, on the one hand, coat the cut surface of the substrate, and on the other hand, anneal the coated substrate. That is, the deposition device 1 of the present application has the functions of coating and annealing the substrate at the same time, which can reduce the complex structure required for the transfer of the substrate from the coating chamber to the annealing chamber in the related art and the various pollutions that may be caused. The problem of the infrared heater 16 surface being coated, resulting in a decrease in the efficiency of the infrared heater 16, can be improved by the passivation method described later, by continuously heating the infrared heater 16 to a certain temperature to promote the decomposition of the surface source, and the details can be seen in the following description.

[0045] A process channel 17 for process gas to flow through is provided between the infrared heater 16 and the wafer carrier boat 15. The process gas can flow directly through the surface of the substrate to be coated through the process channel 17, and the flow of the process gas in other directions can be blocked by the infrared heater 16 or the wafer carrier boat 15. In this way, the consumption of process gas can be reduced, and the turbulent flow of process gas can be reduced.

[0046] Combination Figures 2 to 4 In some embodiments, the deposition device 1 further includes a carrier 13, the carrier 13 has an installation cavity 14, the carrier 13 is detachably installed in the process chamber, the wafer boat 15 is arranged in the installation cavity 14, and the infrared heater 16 is installed on the carrier 13. In this embodiment, the wafer boat 15 is indirectly placed in the process chamber through the carrier 13. The carrier 13 can be disassembled from the deposition device 1 separately. Then the wafer boat 15 can be disassembled outside the deposition device 1, and the above method can facilitate the placement and removal of the wafer boat 15. In some embodiments, an electrode feeding assembly is provided in the process chamber, and an electrode feeding portion electrically connected to the infrared heater 16 is provided on the carrier 13. When the carrier 13 is installed in the process chamber, the electrode feeding assembly can feed current into the infrared heater 16.

[0047] In some embodiments, the substrates in the wafer boat 15 are stacked, and the side surfaces of the stacked substrates to be coated are exposed to the process channel 17, and the other surfaces of the stacked substrates are covered by the wafer boat 15. The cut surfaces of the stacked substrates need to be passivated, while the other surfaces of the substrates do not need to be coated. In the case where process gases may flow through the other surfaces, it is easy to produce unwanted coatings, such as wrap-around coating or conversion of atomic layer deposition coating to chemical vapor deposition coating. By providing the wafer boat 15, on the one hand, the cut surfaces of the substrates that need to be coated can be exposed. On the other hand, the surfaces of the substrates that do not need to be coated can be covered, thereby reducing the process gas flowing through the surfaces of the substrates that do not need to be coated, and improving the technical problems that may cause wrap-around coating.

[0048] In some embodiments, a plurality of carriers 13 are arranged in the process chamber, and the process channels 17 are connected in parallel or in series. A plurality of carriers 13 may be arranged in the same deposition device 1, so that a plurality of wafer boats 15 and a plurality of groups of stacked substrates can be passivated at the same time. The process channels 17 in the carrier 13 may be connected in series. The process gas may pass through the process channels 17 in sequence from the direction in which the carriers 13 are arranged. The process channels 17 in the carrier 13 may be connected in parallel. The process gas may enter the carriers 13 separately at the same time. Optionally, the process channels 17 of the carrier 13 are partially connected in series and partially connected in parallel.

[0049] Alternatively, a plurality of wafer boats 15 are provided in the mounting cavity 14, and the infrared heaters 16 respectively form process channels 17 with the wafer boats 15, and the process channels 17 are connected in parallel or in series. A plurality of wafer boats 15 may be provided in the same carrier 13, so that a plurality of stacked substrates may be passivated simultaneously through the same carrier 13. The process channels 17 formed by the wafer boats 15 and the infrared heaters 16 may be connected in series. For example, the process gas may pass through the process channels 17 in sequence from the direction in which the wafer boats 15 are arranged. For example, a plurality of infrared heaters 16 and a plurality of wafer boats 15 correspond one by one to form a plurality of process channels 17, and the process gas passes through the process channels 17 in sequence. For another example, the same infrared heater 16 may be provided corresponding to a plurality of wafer boats 15, and the wafer boats 15 may be provided on the same side of the infrared heater 16, and the infrared heater 16 and the wafer boat 15 may form a plurality of process channels 17 naturally connected in series, and the process gas may pass through the process channels 17 in sequence.

[0050] The process channels 17 of the wafer carrier boat 15 and the infrared heater 16 may be connected in parallel. The process gases may enter the process channels 17 respectively. For example, a plurality of infrared heaters 16 and a plurality of wafer carrier boats 15 may correspond to each other to form a plurality of process channels 17, and the process channels 17 formed by the plurality of wafer carrier boats 15 and the infrared heaters 16 may be connected to a gas source at the same time, and the process gases may enter different process channels 17 at the same time. For another example, the same infrared heater 16 may be provided corresponding to a plurality of wafer carrier boats 15, and the wafer carrier boats 15 may be provided with two sides of the infrared heater 16 respectively. The wafer carrier boat 15 naturally forms two process channels 17 on both sides of the infrared heater 16, and the coating may be performed by simultaneously introducing the process gases into the two process channels 17.

[0051] Optionally, the process channels 17 formed by the wafer boat 15 and the infrared heater 16 are partially connected in series and partially in parallel, and the process gas can enter different parallel process channels 17 simultaneously and then enter other process channels 17 connected in series in turn.

[0052] Combination Figure 5 and Figure 6 In other embodiments, the wafer boat 15 is detachably mounted in the process chamber, and the infrared heater 16 is mounted in the process chamber. In this embodiment, the wafer boat 15 is directly placed in the process chamber.

[0053] In some embodiments, a plurality of wafer boats 15 are provided in the mounting cavity 14, and a plurality of infrared heaters 16 respectively form process channels 17 with the wafer boats 15, and the process channels 17 are connected in parallel or in series. The arrangement of the wafer boats 15 can be in various ways. The process channels 17 formed by adjacent wafer boats 15 and infrared heaters 16 can be arranged in series. The process gas can flow through the process channels 17 in the arrangement direction of the wafer boats 15 in sequence. The process channels 17 formed by adjacent wafer boats 15 and infrared heaters 16 can be arranged in parallel, and the process gas can enter the plurality of process channels 17 at the same time. Optionally, the process channels 17 can also be connected in parallel and then in series.

[0054] Specifically, the process channel 17 formed by the wafer boat 15 and the infrared heater 16 can be connected in series, for example, in the following manner. For example, the process gas can pass through the process channel 17 in sequence from the direction in which the wafer boats 15 are arranged. For example, a plurality of infrared heaters 16 and a plurality of wafer boats 15 correspond to each other to form a plurality of process channels 17, and the process gas passes through the process channels 17 in sequence. For another example, the same infrared heater 16 can be provided corresponding to a plurality of wafer boats 15, and the wafer boats 15 can be provided on the same side of the infrared heater 16. The infrared heater 16 and the wafer boat 15 can form a plurality of process channels 17 naturally connected in series, and the process gas can pass through the process channels 17 in sequence.

[0055] The process channels 17 of the wafer carrier boat 15 and the infrared heater 16 can be connected in parallel, for example, in the following manner. For example, a plurality of infrared heaters 16 and a plurality of wafer carrier boats 15 correspond to each other to form a plurality of process channels 17, and the process channels 17 formed by the plurality of wafer carrier boats 15 and the infrared heaters 16 are simultaneously connected to a gas source, and the process gas can enter different process channels 17 at the same time. For another example, the same infrared heater 16 can be provided corresponding to a plurality of wafer carrier boats 15, and the wafer carrier boats 15 can be provided with two sides of the infrared heater 16 respectively. The wafer carrier boat 15 naturally forms two process channels 17 on both sides of the infrared heater 16, and the coating can be performed by simultaneously introducing the process gas into the two process channels 17.

[0056] Optionally, the process channels 17 formed by the wafer boat 15 and the infrared heater 16 are partially connected in series and partially in parallel, and the process gas can enter different parallel process channels 17 simultaneously and then enter other process channels 17 connected in series in turn.

[0057] In some embodiments, a plurality of infrared heaters 16 are arranged at intervals in the process chamber, and an installation cavity 14 for installing a wafer boat 15 is formed between the infrared heaters 16. The wafer boat 15 is detachably installed in the installation cavity 14. For example, the number of infrared heaters 16 may be two, three or more, and the infrared heaters 16 are arranged at intervals in the process chamber. Taking three infrared heaters arranged at intervals as an example, three infrared heaters 16 can form two installation cavities 14. Among them, two installation cavities 14 can install two wafer boats 15, and the infrared heaters 16 can heat the two sides of the wafer boat 15 respectively. The two installation cavities 14 can also install multiple wafer boats 15, and the multiple wafer boats 15 can be arranged in sequence along the spacing direction of the infrared heaters 16.

[0058] Among them, when two mounting cavities 14 are equipped with two wafer boats 15, the process channel 17 formed by the infrared heater 16 and the wafer boat 15 is in a parallel relationship, and the process gas can enter the process channel 17 at the same time. When multiple wafer boats 15 are installed in two mounting cavities 14, the process channels 17 are both in series and in parallel. For example, the wafer boats 15 of the same mounting cavity 14 are arranged along the length direction of the infrared heater 16, and the same infrared heater 16 corresponds to multiple wafer boats 15. In this case, the process channels 17 in the same mounting cavity 14 are in a series relationship, while the process channels 17 of the two adjacent mounting cavities 14 are in a parallel relationship. The two wafer boats 15 in the same mounting cavity 14 can also be arranged back to back, and the two wafer boats 15 face the infrared heaters 16 on both sides respectively. In this case, the process channels 17 in the same mounting cavity 14 can also be in a parallel relationship. The series and parallel connection of the process channels 17 are not limited to the above-mentioned distance description.

[0059] Combination Figure 1 In some embodiments, the deposition device 1 further includes a shower plate 121 and a negative pressure pump 18, and the shower plate 121 and the negative pressure pump 18 are respectively connected to the process channel 17. The shower plate 121 is arranged corresponding to the process channel 17. The shower plate 121 can uniformly introduce the process gas into the process channel 17, thereby meeting the process conditions required for the coating. The negative pressure pump 18 can remove the gas from the process channel 17 through the outlet channel, thereby playing the role of vacuuming or promoting the uniform flow of the process gas.

[0060] In some embodiments, the deposition device 1 further includes a door body 12, a spray plate 121 is disposed on the door body 12, and when the door body 12 is closed, the spray plate 121 is disposed corresponding to the process channel 17. The door body 12 is used to close the process chamber. The spray plate 121 is disposed on the side of the door body 12 facing the process chamber, and when the door body 12 closes the process chamber, the spray plate 121 can introduce the process gas into the process channel 17 respectively. The spray plate 121 can be arranged protruding from the door body 12, so that the spray plate 121 is closer to the process channel 17. The spray plate 121 is embedded in the process channel 17 to introduce the process gas more directly into the process channel 17, so that the heating plate and the wafer carrier boat 15 can seal the gas introduction of the spray plate 121, thereby reducing the gap of the heating plate or the gap of the wafer carrier boat 15 through which the process gas flows, and the occurrence of the plating bypass phenomenon can be reduced.

[0061] In some embodiments, the deposition device 1 further includes a chamber heater 19, which is mounted on the device body 11 and is used to heat the process chamber. The chamber heater 19 can be used to preheat or maintain the temperature of the process chamber during the coating process, thereby reducing the time required for the process chamber to heat up, thereby achieving the technical effect of increasing production capacity.

[0062] Combination Figure 7 , the present application embodiment provides a substrate passivation method. The method comprises:

[0063] S10: Extraction: extracting the gas in the process chamber to maintain a sufficient vacuum degree in the process chamber.

[0064] In order to prevent the air or particles in the process chamber from interfering with the coating process and causing contamination of the substrate, the gas in the process chamber can be evacuated by a negative pressure pump 18 and a certain vacuum degree can be maintained to meet the process conditions required for coating.

[0065] S20: Purge, introduce inert protective gas to purge impurities in the process chamber.

[0066] After the process gas is evacuated to a sufficient vacuum, in order to reduce the interference of residual impurities on the coating process, an inert protective gas such as nitrogen can be introduced into the process chamber to purge the impurities in the process chamber and ensure the cleanliness of the process chamber.

[0067] S30: Preheating, turning on the infrared heater 16 to preheat the substrate.

[0068] The coating of the substrate requires that the surface of the substrate has a sufficient temperature. Turning on the infrared heater 16 can preheat the substrate, thereby raising its temperature to the process conditions required for coating. During the preheating process, the process chamber needs to have a sufficient vacuum degree, or only the aforementioned purged inert protective gas. No process gas needs to be introduced during the preheating step.

[0069] In some embodiments, the deposition device 1 further has a cavity heater 19. In the case of having a cavity heater 19, in the preheating step, the cavity heater 19 can also be turned on to preheat the substrate, for example, the temperature of the cavity heater 19 is maintained at 150-320°C. Optionally, the temperature of the cavity heater 19 is lower than the temperature of the infrared heater 16. The cavity heater 19 can assist in the preheating of the infrared heater 16, but if the temperature of the cavity heater 19 is too high, the surface of the substrate that does not need to be coated will be heated, which may cause technical problems of substrate adhesion. By setting the cavity heater 19, the heat loss of the infrared heater 16 when heating the coated surface can be reduced, so that the temperature of the coated surface can be heated to the temperature required by the process as soon as possible, but the temperature set by the cavity heater 19 is lower than the temperature of the infrared heater 16 to reduce the temperature of the part of the substrate that does not need to be heated, thereby reducing the technical problem of adhesion.

[0070] In some embodiments, during the preheating step, the temperature of the infrared heater 16 is between 280°C and 650°C, such as 300°C, 350°C, 380°C, 450°C, 490°C, 530°C or 620°C.

[0071] S40: Passivation, introducing process gas into the process channel 17 to coat the unmasked side of the substrate. At the same time, the temperature of the infrared heater 16 is maintained at a preset temperature.

[0072] By introducing process gas into the process channel 17, the process gas can flow through the substrate surface heated to the process temperature, thereby performing coating passivation on the unmasked substrate side. In the process of coating passivation, the temperature of the infrared heater 16 is maintained at a preset temperature. By maintaining the temperature of the infrared heater 16 at the preheating temperature, the process gas falling on the surface of the infrared heater 16 can be decomposed in time to avoid the formation of a coating on the surface of the infrared heater 16. In this way, the surface of the infrared heater 16 can be prevented from being blocked by the coating, which affects the emission of infrared rays, reduces the decrease in the heating efficiency of the infrared heater 16, and enables the infrared heater 16 to continue to have the aforementioned ability to heat the local area in a targeted manner.

[0073] In some embodiments, during the passivation step, the temperature of the infrared heater 16 is maintained at 280-650°C. 。 For example, 300°C, 350°C, 380°C, 450°C, 490°C, 530°C or 620°C.

[0074] S50: Annealing, increasing the power of the infrared heater 16, maintaining the temperature of the infrared heater at 600-1700° C., such as 600° C., 700° C., 800° C., 900° C., 1000° C., 1100° C., 1200° C., 1300° C., 1400° C., 1500° C., 1600° C. or 1700° C. The substrate is heated to the annealing temperature and then the infrared heater 16 is turned off.

[0075] The deposition device 1 of the present application can also anneal the substrate after coating. Annealing requires that the coated surface be heated to a sufficient temperature, but in order to avoid adhesion of the substrate, the temperature of the uncoated surface cannot be too high. The present application can effectively avoid the deposition of a thin film on the surface of the infrared heater 16 during the passivation process through the aforementioned method. The infrared heater 16 has a higher heating efficiency for the surface that can be directly irradiated by infrared rays, and a relatively lower heating efficiency for the surface that cannot be directly irradiated by infrared rays. By using the infrared heater 16 for annealing, the surface of the substrate opposite to the infrared heater 16 (that is, the surface after coating) can be quickly heated up to meet the process requirements, and the heating rate of other surfaces of the substrate can be reduced, reducing the phenomenon of substrate adhesion.

[0076] During the annealing process, process gas is no longer introduced, and the process channel 17 can be evacuated to a sufficient vacuum degree by the negative pressure pump 18 , or an inert protective gas can be introduced through the spray plate 121 .

[0077] In the case of a cavity heater 19, in the annealing step, the passivation method further includes lowering the temperature of the cavity heater 19 or turning off the cavity heater 19. Since annealing requires heating to a sufficient temperature and then naturally cooling in the cavity, if the heat of the cavity heater 19 is too high, it will affect the annealing process, so the cavity heater 19 needs to be turned off or its temperature needs to be lowered during the annealing process to meet the annealing process requirements.

[0078] S60: Breaking the air, introducing inert protective gas into the process chamber, and restoring the air pressure in the process chamber;

[0079] After the substrate is annealed, an inert protector may be introduced into the process chamber to break the internal vacuum environment and restore the air pressure in the process chamber, thereby facilitating the opening of the door 12 and the removal of the wafer boat 15 .

[0080] S70: Transferring, transferring and cooling the substrate.

[0081] After breaching, the substrate can be transferred out of the process chamber for cooling.

[0082] In the case where the deposition device 1 has a chamber heater 19, in the transfer step, the passivation method further includes, after taking out the substrate, turning on the chamber heater 19. After taking out the substrate, the chamber heater 19 can be turned on to maintain a certain temperature in the process chamber, thereby reducing the preheating time required for the next process, thereby achieving the purpose of improving production capacity.

[0083] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A deposition device, characterized in that: include: An equipment body, wherein the equipment body has a process cavity; A wafer boat is disposed in the process chamber, the wafer boat has a receiving cavity for receiving the substrate, and the wafer boat covers at least one side of the substrate; The infrared heater is opposite to and spaced from at least one side of the substrate not covered by the wafer carrier boat. A process channel for process gas to flow through is provided between the infrared heater and the wafer carrier boat. The infrared heater is used to heat the side of the substrate not covered.

2. The deposition device according to claim 1, characterized in that: The deposition device further comprises a carrier having an installation cavity. The carrier is detachably installed in the process chamber. The wafer boat is arranged in the installation cavity. The infrared heater is installed on the carrier.

3. The deposition device according to claim 2, characterized in that: The substrates in the wafer boat are stacked, and the side surfaces of the stacked substrates to be coated are exposed to the process channel, while the other sides of the stacked substrates are covered by the wafer boat.

4. The deposition device according to any one of claims 2 to 3, characterized in that: A plurality of carriers are arranged in the process chamber, and the process channels are connected in parallel or in series; Alternatively, a plurality of wafer boats are arranged in the installation cavity, and the infrared heaters respectively form the process channels with the wafer boats, and the process channels are connected in parallel or in series.

5. The deposition device according to claim 1, characterized in that: The wafer boat is detachably installed in the process chamber, and the infrared heater is installed in the process chamber.

6. The deposition device according to claim 5, characterized in that: A plurality of wafer boats are arranged in the process chamber, and a plurality of infrared heaters respectively form the process channels with the wafer boats, and the process channels are connected in parallel or in series.

7. The deposition device according to claim 6, characterized in that: A plurality of the infrared heaters are arranged in the process chamber at intervals, and a mounting cavity for mounting the wafer boat is formed between the infrared heaters; the wafer boat can be detachably mounted in the mounting cavity.

8. The deposition device according to claim 1, characterized in that: The deposition equipment further includes a shower plate and a negative pressure pump, and the shower plate and the negative pressure pump are respectively connected to the process channel.

9. The deposition device according to claim 8, characterized in that: The deposition device further includes a door body, the shower plate is arranged on the door body, and when the door body is closed, the shower plate is arranged corresponding to the process channel.

10. The deposition device according to claim 1, characterized in that: The deposition device further comprises a chamber heater, which is installed on the device body and is used to heat the process chamber.

11. A substrate passivation method, applied to the deposition device according to any one of claims 1 to 10, characterized in that: include: Extraction: extracting the gas in the process chamber to maintain a sufficient vacuum degree in the process chamber; Purging, introducing an inert protective gas to purge impurities in the process chamber; Preheating, turning on the infrared heater to preheat the substrate; Passivation, introducing process gas into the process channel to coat the unmasked side of the substrate; at the same time, maintaining the temperature of the infrared heater at a preset temperature; Break the air, introduce inert protective gas into the process chamber, and restore the air pressure in the process chamber; Transfer, transfer and cool the substrate.

12. The method according to claim 11, characterized in that: In the preheating step, the temperature of the infrared heater is between 280°C and 650°C; During the passivation step, the temperature of the infrared heater is maintained at 280-650°C. 。 13. The method according to claim 11, characterized in that: After the passivation step, the method further comprises: Annealing, increase the power of the infrared heater, maintain the temperature of the infrared heater at 600-1700° C., heat the substrate to the annealing temperature and then turn off the infrared heater.

14. The method according to claim 13, characterized in that: The deposition device further comprises a chamber heater, which is installed on the device body and is used to heat the process chamber; In the preheating step, the method further comprises turning on the cavity heating element; In the annealing step, the method further comprises lowering the temperature of the cavity heating element or turning off the cavity heating element; In the transfer step, the method further comprises, after taking out the substrate, turning on the chamber heating element.

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