Ceramic packaging tube shell in 3D stacking form

Abstract

According to the technical scheme, the ceramic packaging tube shell in the 3D stacking form comprises an upper substrate, a middle substrate and a lower substrate which are sequentially arranged from top to bottom, and the upper substrate and the middle substrate are connected through a first copper assembly and form a first containing cavity; the middle substrate and the lower substrate are connected through a second copper assembly and form a second containing cavity, T and R of a transceiving assembly are placed in the first containing cavity and the second containing cavity respectively, and one end of the first copper assembly and one end of the second copper assembly are in electroplating connection with the upper substrate and the lower substrate through the DPC technology respectively. The T assembly and the R assembly are connected on the z axis in a copper electroplating box dam mode, the space on the plane and the cost are greatly saved, meanwhile, copper column electroplating is conducted in a DPC copper electroplating mode, the position of the copper column electroplating is limited through the dry film, the copper column can only be electroplated in a specified area, mold positioning is not needed, and the precision is very high.

Description

Technical Field

[0001] The invention relates to the technical field of ceramic-based microsystem integrated housings, in particular to a 3D stacked ceramic package tube shell. Background Art

[0002] Ceramic-based microsystem integrated housings can integrate different electronic components, such as digital integrated circuits, RF integrated circuits, passive components, sensor antennas, etc. into a complete system, and can include commonly used unit modules. Microsystem integration technology has the advantages of high packaging integration, good process compatibility, good electrical performance, low cost and high reliability, and is widely used in aerospace and military electronics fields.

[0003] However, currently, basically, individual HTCC tube shells are connected through transmission lines. Individual HTCC tube shells cannot put TR transceiver components together, and they must be placed in two tube shells. As a result, when packaging the TR transceiver components, two ceramics are used to respectively package the T and R components, and they are connected with adapter cables on the assembly plane. Such products will not only increase the cost of the adapter cables, but will also occupy a large area of ​​space on the plane, causing the overall assembly components to become larger. Summary of the invention

[0004] In view of the shortcomings of the prior art, the present invention aims to provide a 3D stacked ceramic packaging tube shell.

[0005] In order to achieve the above object, the technical solution of the present invention is as follows:

[0006] A 3D stacked ceramic packaging tube shell includes an upper substrate, a middle substrate and a lower substrate arranged in sequence from top to bottom, the upper substrate and the middle substrate are connected by a copper component one to form a receiving cavity one, the middle substrate and the lower substrate are connected by a copper component two to form a receiving cavity two, the receiving cavity one and the receiving cavity two respectively contain T and R of a transceiver component, one end of the copper component one and the copper component two are respectively connected to the upper substrate and the lower substrate by DPC process electroplating, and the other ends of the copper component one and the copper component two are respectively welded to both sides of the middle substrate.

[0007] Preferably, the copper component 1 and the copper component 2 both include a copper dam for sealing welding and a copper column for signal connection.

[0008] Preferably, the precision deviation of electroplating the copper dam is no more than 60um.

[0009] Preferably, the copper component 1 and the copper component 2 are both welded to the middle substrate by gold-tin solder.

[0010] Preferably, the upper substrate and the lower substrate are both configured to be substrates manufactured using a DPC thin film process.

[0011] Preferably, the upper substrate is configured as a DPC aluminum nitride ceramic substrate.

[0012] Preferably, the lower substrate is configured as a DPC alumina ceramic substrate.

[0013] Preferably, the middle substrate is configured as a HTCC alumina ceramic substrate.

[0014] Compared with the prior art, the present invention has the following beneficial effects:

[0015] 1. The present invention connects T and R components on the z-axis by electroplating copper dams, which greatly saves space and cost on the plane. At the same time, copper pillars are electroplated by DPC copper plating, and the positions of the electroplated copper pillars are limited by dry film, so that the copper pillars can only be electroplated in a specified area, without mold positioning and with high precision;

[0016] 2. The present invention uses DPC aluminum nitride ceramic substrate, HTCC alumina ceramic substrate and DPC alumina ceramic substrate as upper, middle and lower circuit substrates respectively, applies thick film printing technology, includes a variety of microwave transmission structures, and utilizes electroplated copper to achieve isolation, airtightness and heat dissipation functions. It is used for microwave multi-chip modules, components and subsystems, which is in line with the current trend of miniaturization and integration of electronic equipment. The integrated technology of substrate integration and the three-dimensional packaging structure can meet the packaging requirements of the system and subsystem, with a compact structure and high integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The disclosure of the present invention is described with reference to the accompanying drawings. It should be understood that the drawings are only for illustrative purposes and are not intended to limit the scope of protection of the present invention. In the drawings, the same reference numerals are used to refer to the same components. Among them:

[0018] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0019] Figure 2 is a schematic structural diagram of the upper substrate of the present invention;

[0020] Figure 3 The structure of the substrate in the present invention is shown in FIG. Figure 1 ;

[0021] Figure 4 The structure of the substrate in the present invention is shown in FIG. Figure 2 ;

[0022] Figure 5 It is a structural schematic diagram of the lower substrate of the present invention.

[0023] Notes in the figure: 1. Upper substrate; 2. Copper component one; 3. Middle substrate; 4. Copper component two; 5. Lower substrate. DETAILED DESCRIPTION

[0024] It is easy to understand that according to the technical solution of the present invention, without changing the essential spirit of the present invention, a person skilled in the art can propose a variety of interchangeable structural modes and implementation modes. Therefore, the following specific implementation modes and drawings are only exemplary descriptions of the technical solution of the present invention, and should not be regarded as the whole of the present invention or as a limitation or restriction to the technical solution of the present invention.

[0025] like Figure 1 As shown, as a 3D stacked ceramic package tube shell of the present invention, it includes an upper substrate 1, a middle substrate 3 and a lower substrate 5, and the upper substrate 1, the middle substrate 3 and the lower substrate 5 are arranged in sequence from top to bottom. The upper substrate 1 is set as a DPC aluminum nitride ceramic substrate, the middle substrate 3 is set as a HTCC alumina ceramic substrate, and the lower substrate 5 is set as a DPC alumina ceramic substrate. The upper substrate 1 and the lower substrate 5 are both made by DPC thin film technology, and the accuracy can reach 0.05mm, which is higher than the 0.1mm accuracy of the ordinary HTCC thick film process. The range of choices during design is larger, more high-frequency routing can be selected, and the performance is more stable. At the same time, multi-layer wiring can be performed through the HTCC alumina multilayer ceramic substrate of the middle substrate 3, and the pad positions on the front and back sides can be flexibly adjusted, so that the positions of chips and various devices can be adjusted more flexibly. The lower substrate 5 uses an alumina ceramic substrate to save costs.

[0026] like Figure 1 As shown, the upper substrate 1 and the middle substrate 3 are connected by a copper component 1 2, and the middle substrate 3 and the lower substrate 5 are connected by a copper component 2 4. Figure 2-5As shown, one end of the copper component 1 2 and the copper component 2 4 are respectively connected to the upper substrate 1 and the lower substrate 5 by DPC process electroplating, and the other ends of the copper component 1 2 and the copper component 2 4 are respectively welded to the two sides of the middle substrate 3 by gold-tin solder. The copper component 1 2 and the copper component 2 4 both include a copper dam for sealing welding and a copper column for signal connection, and the precision deviation of the electroplated copper dam is 50um, which is generally smaller than the welding tolerance of the mold positioning, which greatly guarantees the overall performance. The transceiver component T and the R component are connected on the z-axis by electroplating the copper dam, and T and R are respectively placed between the upper substrate 1 and the middle substrate 3 and the middle substrate. Between the board 3 and the lower substrate 5, not only is TR effectively isolated, but also signals can be connected through copper pillars, which greatly saves space and cost on the plane. The copper pillars are plated by DPC copper plating, and the position of the plated copper pillars is limited by dry film, so that the copper pillars can only be plated in the specified area. No mold positioning is required and the accuracy is very high. The heat dissipation effect of copper is greater than that of the conventionally used kovar metal, and it can better dissipate heat when combined with the aluminum nitride substrate. The electroplated copper of this product has a certain height, leaving a certain space for chip installation, and there are separate copper pillars and other ceramic tube shells for signal transmission.

[0027] When in use, the copper component 1 2 is electroplated layer by layer on the bottom surface of the upper substrate 1 through the DPC process, and the copper component 1 2 is then welded to the front surface of the middle substrate 3 through gold-tin welding, and the copper component 2 4 is electroplated layer by layer on the top surface of the lower substrate 5 through the DPC process, and finally the back of the middle substrate 3 is welded to the copper component 2 4 through gold-tin welding;

[0028] DPC aluminum nitride ceramic substrate, HTCC alumina ceramic substrate and DPC alumina ceramic substrate are used as upper, middle and lower circuit substrates respectively, and thick film printing technology is adopted. Electroplated copper is used to achieve isolation, airtightness and heat dissipation functions. The integrated technology of substrate integration and three-dimensional packaging structure can meet the packaging requirements of systems and subsystems, with compact structure and high integration.

[0029] The technical scope of the present invention is not limited to the contents in the above description. Those skilled in the art can make various deformations and modifications to the above embodiments without departing from the technical idea of ​​the present invention, and these deformations and modifications should all fall within the protection scope of the present invention.

Claims

1. A 3D stacked ceramic package tube shell, characterized in that: The invention comprises an upper substrate (1), a middle substrate (3) and a lower substrate (5) which are arranged in sequence from top to bottom. The upper substrate (1) and the middle substrate (3) are connected via a copper component one (2) to form a first accommodating cavity. The middle substrate (3) and the lower substrate (5) are connected via a copper component two (4) to form a second accommodating cavity. Transceiver components T and R are respectively placed in the first accommodating cavity and the second accommodating cavity. One end of the copper component one (2) and the copper component two (4) are respectively connected to the upper substrate (1) and the lower substrate (5) by electroplating through a DPC process. The other ends of the copper component one (2) and the copper component two (4) are respectively welded to two sides of the middle substrate (3).

2. The 3D stacked ceramic package tube shell according to claim 1, characterized in that: The copper component one (2) and the copper component two (4) both include a copper dam for sealing welding and a copper column for signal connection.

3. The 3D stacked ceramic package tube shell according to claim 2, characterized in that: The precision deviation of the electroplated copper dam is no more than 60um.

4. The 3D stacked ceramic package tube shell according to claim 3, characterized in that: The copper component one (2) and the copper component two (4) are both welded to the middle substrate (3) by means of gold-tin solder.

5. The 3D stacked ceramic package tube shell according to claim 1, characterized in that: The upper substrate (1) and the lower substrate (5) are both substrates manufactured using a DPC thin film process.

6. The 3D stacked ceramic package tube shell according to claim 5, characterized in that: The upper substrate (1) is configured as a DPC aluminum nitride ceramic substrate.

7. The 3D stacked ceramic package tube shell according to claim 6, characterized in that: The lower substrate (5) is configured as a DPC alumina ceramic substrate.

8. The 3D stacked ceramic package tube shell according to claim 7, characterized in that: The middle substrate (3) is configured as a HTCC alumina ceramic substrate.

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