Deposition apparatus

Abstract

The invention discloses a deposition apparatus. The deposition apparatus includes a body and a heating assembly. The main body has a process cavity. The heating assemblies comprise the first heating assemblies and the second heating assemblies, the first heating assemblies are arranged on the two opposite sides of the main body in the first direction correspondingly, and the second heating assemblies are arranged on the two opposite sides of the main body in the second direction different from the first direction correspondingly. Wherein the heating power of the first heating assembly is uniformly distributed; in the first direction, the heating power of the middle of the second heating assembly is smaller than that of the two sides of the second heating assembly, and the heating power of the two sides of the second heating assembly is smaller than or equal to that of the first heating assembly. In this way, the deposition equipment can provide a uniform thermal field.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a deposition device. Background Art

[0002] In the field of semiconductor thin film deposition, substrates need to be transported into the process chamber via a wafer boat for heating and process coating. In order to increase production capacity, the volume of wafer boats and deposition equipment continues to increase. However, the increase in the volume of deposition equipment will lead to a decrease in the uniformity of the thermal field inside the equipment, which has become a technical problem that restricts the continued increase in production capacity. Summary of the invention

[0003] Embodiments of the present application provide a deposition apparatus capable of providing a uniform thermal field for a wafer boat.

[0004] The embodiment of the present application provides a deposition device. The deposition device includes a main body and a heating component. The main body has a process chamber. The heating component includes a first heating component and a second heating component, the first heating component is respectively arranged on two opposite sides of the main body in a first direction, and the second heating component is respectively arranged on two opposite sides of the main body in a second direction different from the first direction. The heating power of the first heating component is evenly distributed; in the first direction, the heating power of the middle part of the second heating component is less than the heating power of the two sides of the second heating component, and the heating power of the two sides of the second heating component is less than or equal to the heating power of the first heating component.

[0005] Optionally, the first direction is the direction of gravity, the main body has a top side and a bottom side relatively arranged in the first direction, and two side sides relatively arranged in the second direction, the second direction is perpendicular to the first direction, the first heating component is respectively arranged on the top side and the bottom side, and the second heating component is respectively arranged on the two side sides.

[0006] Optionally, the process chamber is used to accommodate a wafer boat, the wafer boat includes a plurality of boat pages arranged side by side and spaced apart, the boat pages are arranged along the second direction, a receiving space for accommodating the substrate is formed between the boat pages, and the plane where the boat pages are located is parallel to the first direction; the wafer boat also includes boat feet arranged at the bottom of the boat pages, and the boat feet are spaced apart in the second direction;

[0007] The main body includes an outer shell and a process tube. The process tube is arranged in the outer shell. The process tube has a process cavity. A heat-conducting space is formed between the process tube and the outer shell. The heating component is arranged in the heat-conducting space. The deposition equipment also includes an auxiliary heating component, which is arranged in the process tube.

[0008] Optionally, the first heating assembly includes a plurality of first heating elements, which extend along a third direction, the third direction is perpendicular to the first direction and the second direction, and the first heating elements are evenly spaced in the second direction; the second heating assembly includes a plurality of second heating elements, which are spaced in the first direction, and the second heating elements extend along the third direction; the spacing between the second heating elements located in the middle of the second heating assembly is greater than the spacing between the second heating elements located on both sides of the second heating assembly.

[0009] Optionally, the spacing between the first heating elements is 20-40 mm, the minimum spacing between the second heating elements is 20-40 mm, and the maximum spacing between the second heating elements is 40 mm-80 mm.

[0010] Optionally, the process chamber is used to accommodate the wafer boat, and the deposition equipment also includes an auxiliary heating component, the auxiliary heating component includes a first auxiliary heating component and a second auxiliary heating component arranged on both sides of the wafer boat in a first direction, the first auxiliary heating component includes at least two first auxiliary heating components arranged at intervals in the second direction, and the second auxiliary heating component includes at least two second auxiliary heating components arranged at intervals in the second direction.

[0011] Optionally, the bottom of the wafer boat further includes boat feet that are spaced apart, the second auxiliary heating component is disposed on one side of the bottom of the wafer boat, and the projection of the second auxiliary heating component on the wafer boat is located between the boat feet.

[0012] Optionally, the spacing between the first auxiliary heating elements is 50-70 mm, and the spacing between the second auxiliary heating elements is 20-30 mm.

[0013] Optionally, projections of at least two of the first auxiliary heating elements in the first direction coincide with projections of at least two of the second auxiliary heating elements in the first direction.

[0014] Optionally, the process chamber is used to accommodate the wafer boat, the process chamber has an accommodating area, and the wafer boat is placed in the accommodating area;

[0015] In the first direction, the accommodating area is centrally arranged, and the ratio of the length of the accommodating area in the first direction to the spacing distance between the first heating components is less than 3:4;

[0016] In the second direction, the accommodating area is centrally arranged, and the ratio of the length of the accommodating area in the second direction to the spacing distance between the second heating components is less than 4:5.

[0017] The beneficial effect of the present application is that the wafer boat is generally arranged in the process chamber by a plurality of boat pages arranged at intervals. In the direction where the gap between the boat pages is located, that is, in the first direction, due to the absence of obstruction, the heat conduction efficiency is high, while in the arrangement direction of the boat pages, due to the obstruction of the boat pages, the heat conduction efficiency is low. Based on the above reasons, by setting the first heating component that generates uniform heating power on the opposite sides of the height direction of the wafer boat, it is possible to conduct heat relatively evenly into the wafer boat. However, in the arrangement direction of the boat pages, that is, in the second direction, the heat generated in the wafer boat and the first heating component will increase in the middle of the wafer boat to the two sides in the first direction because it is getting closer and closer to the edge, and the heat dissipation rate will increase, which is manifested in the thermal field that the heat in the middle of the first direction is high and the heat on both sides is low. In the second direction, due to the obstruction of the boat pages, the heat loss of the wafer boat is relatively not too high, but in the first direction, there is no obstruction between the first heating component and the wafer boat, and the heat loss near the edge is relatively high. By setting the second heating component, the heat lost on both sides of the wafer boat can be compensated. Among them, the middle part of the second heating component with lower heating power can specifically compensate for the heat dissipated by the wafer boat along the second direction, and the part of the second heating component with higher heating power can compensate for the heat between the first heating component and the wafer boat, thereby increasing the uniformity of heat on both sides of the height direction of the wafer boat, thereby achieving the purpose of increasing the uniformity of the overall thermal field. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a schematic cross-sectional structure diagram of an embodiment of a deposition device of the present application;

[0019] Figure 2 yes Figure 1 A schematic structural diagram of the first heating component;

[0020] Figure 3 yes Figure 1 A schematic diagram of the structure of the second heating component;

[0021] Figure 4 This is a schematic diagram of the structure of the carrier embodiment of the present application.

[0022] Figure 5 yes Figure 1 A schematic diagram of the structure of the first auxiliary heating component;

[0023] Figure 6 yes Figure 1 A schematic diagram of the structure of the second auxiliary heating component;

[0024] Figure 7 This is a simulation diagram of the thermal field distribution of the deposition equipment embodiment of the present application.

[0025] Reference numerals:

[0026] Deposition equipment, 1; main body, 11; outer shell, 111; process tube, 112; process chamber, 1121; heat-conducting space, 113; first heating component, 12; first heating element, 121; second heating component, 13; second heating element, 131; first auxiliary heating component, 14; first auxiliary heating element, 141; second auxiliary heating component, 15; second auxiliary heating element, 151; wafer boat, 2; boat leaf, 21; boat foot, 22. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0028] In the related art, the coating of semiconductor substrates can be carried out using a tubular heating furnace. Due to the demand for capacity upgrade, the overall equipment stack is getting higher and higher, the floor space is getting larger and larger, and the larger the tube diameter, the greater the temperature difference between the upper, lower, left and right thermal fields of the carrier, resulting in the increase in tube diameter being not proportional to the increase in capacity, and the cost is increased instead. Therefore, the uniformity of the thermal field in the equipment has become a technical problem that restricts further improvement in capacity. In order to improve the above technical problems, the present application can provide the following embodiments.

[0029] Combination Figures 1 to 6 , the embodiment of the present application provides a deposition device 1. The deposition device 1 can be a PECVD device, a LECVD device or an ALD device, which is not specifically limited here. The deposition device 1 includes a main body 11 and a heating component. The main body 11 has a process chamber 1121, and the process chamber 1121 is used to accommodate a wafer boat 2.

[0030] In some embodiments, the main body 11 includes a shell 111 and a process tube 112, the process tube 112 is disposed in the shell 111, the process tube 112 has a process cavity 1121, a heat conduction space 113 is formed between the process tube 112 and the shell 111, and the heating assembly is disposed in the heat conduction space 113. Optionally, the cross-sections of the main body 11 and the process tube 112 can be arranged in a square shape, and the main body 11 and the process tube 112 arranged in a square shape can better adapt to the shape of the wafer boat 2, thereby increasing the uniformity of the thermal field.

[0031] In some embodiments, in combination Figure 4The wafer boat 2 includes a plurality of boat pages 21 arranged side by side and spaced apart, and a storage space for accommodating the substrate is formed between the boat pages 21. The plane where the boat pages 21 are located is parallel to the first direction. The first direction may be the direction of gravity. The wafer boat 2 also includes a boat foot 22 arranged at the bottom of the boat page 21, and the boat foot 22 is arranged at intervals in the arrangement direction of the boat page 21, that is, in the second direction different from the first direction. The thickness direction of the boat page 21 is in the second direction, and the plurality of boat pages 21 arranged in the second direction constitute the width of the wafer boat 2. The boat page 21 extends a certain length in the first direction, constituting a part of the height of the wafer boat 2. The boat page 23 may also extend a certain length in a third direction perpendicular to the first direction and the second direction, constituting a part of the length of the wafer boat 2. Optionally, the third direction is the length direction or the axial direction of the deposition device 1, and the inlet and outlet of the deposition device 1 are opened at both ends in the third direction. The boat foot 22 can be placed on a carrier in the process chamber 1121, or on an electrode feed assembly in the process chamber 1121, and can be selected according to the specific type of the deposition device 1, which is not specifically limited here. Optionally, the height of the wafer boat 2 in the gravity direction is less than the width of the wafer boat 2 in the arrangement direction of the boat pages 21.

[0032] It should be noted that the concepts of verticality or parallelism mentioned in the embodiments of the present application are positional relationships under ideal conditions in the design. In actual products, there are manufacturing errors in verticality or parallelism, and there will not be perfect parallelism or verticality. Among them, the verticality or parallelism mentioned in the embodiments of the present application can be measured with tolerances such as verticality or parallelism. The parallel or vertical solutions within a reasonable tolerance range are all included in the protection scope of the present application. The tolerance standards for verticality or parallelism can be combined with relevant technical manuals or textbooks, and are not specifically limited here.

[0033] In the embodiments of the present application, Figures 1 to 3 The heating assembly includes a first heating assembly 12 and a second heating assembly 13. The first heating assembly 12 is disposed in a first direction (eg Figures 1 to 3 The second heating components 13 are respectively arranged on the main body 11 in a second direction different from the first direction (for example Figures 1 to 3The first direction and the second direction intersect, and the angle between the first direction and the second direction may be an acute angle, an obtuse angle, or a right angle. The first direction may be the height direction of the deposition device 1, and the second direction may be the horizontal direction of the deposition device 1. Optionally, the first heating components 12 are respectively located on both sides of the height direction of the wafer boat 2, and the second heating components 13 are respectively located on both sides of the width direction of the wafer boat 2. In other words, the first heating components 12 correspond to the opposite sides of the extension direction of the boat pages 21 of the wafer boat 2 in the first direction, and the second heating components 13 correspond to the arrangement direction of the boat pages 21 of the wafer boat 2, that is, the opposite sides of the second direction.

[0034] In some embodiments, the first direction is the gravity direction, that is, the height direction. The main body 11 has a top side and a bottom side arranged opposite to each other in the first direction, and two sides arranged opposite to each other in a second direction, and the second direction is perpendicular to the first direction. The first heating components 12 are respectively arranged on the top side and the bottom side, and the second heating components 13 are respectively arranged on the two sides.

[0035] The heating power of the first heating component 12 is evenly distributed. In the first direction of the main body 11, the heating power of the middle of the second heating component 13 is less than the heating power of the two sides of the second heating component 13. The heating power of the two sides of the second heating component 13 is less than or equal to the heating power of the first heating component 12.

[0036] Specifically, the wafer boat 2 is generally arranged in the process chamber 1121 by a plurality of boat pages 21 arranged at intervals. In the direction where the gaps between the boat pages 21 are located, that is, in the first direction, the heat conduction efficiency is high because there is no obstruction, while in the arrangement direction of the boat pages 21, the heat conduction efficiency is low due to the obstruction of the boat pages 21. Based on the above reasons, by arranging the first heating component 12 that generates uniform heating power on the opposite sides of the height direction of the wafer boat 2, heat can be uniformly conducted into the wafer boat 2. In the arrangement direction of the boat pages 21, the heat in the wafer boat 2 and the first heating component 12 will gradually dissipate, which is manifested in the thermal field as high heat in the middle and low heat on both sides. Due to the obstruction of the boat pages 21, the heat loss of the wafer boat 2 is relatively not too high, that is, the boat pages 21 will have a certain insulation effect on the wafer boat 2. However, there is no obstruction between the first heating component 12 and the wafer boat 2, and the heat loss is relatively high. By arranging the second heating component 13, the heat lost on both sides of the wafer boat 2 can be compensated. Among them, the middle part of the second heating component 13 with lower heating power can specifically compensate for the relatively low heat dissipated by the wafer boat 2 along the arrangement direction of the boat pages 21, and the part of the second heating component 13 with higher heating power can compensate for the relatively high heat lost between the first heating component 12 and the wafer boat 2, thereby increasing the uniformity of heat on both sides of the height direction of the wafer boat 2.

[0037] It should be noted that the uniform heating power proposed in the embodiment of the present application can be achieved by using multiple heating elements with the same power at uniform intervals. The heating power of the middle part of the second heating component 13 proposed in the present application is less than the heating power on both sides, which means that the second heating component 13 generates relatively less heat in the middle part, and relatively more heat near the two sides. The gradual increase in the heating power of the second heating component 13 can be achieved in a variety of ways.

[0038] For example, the heating power may gradually increase from the middle of the second heating component 13 to both sides. Alternatively, the heating power may increase in stages from the middle of the second heating component 13 to both sides.

[0039] The heating power in the middle of the second heating assembly 13 is smaller than the heating power on the two sides by evenly arranging a plurality of heating elements, wherein the power of the heating element near the middle is lower, while the power of the heating element near the two sides is higher. Specifically, the difference in heating power can be achieved by setting the resistance of the heating element near the middle to be lower, while the resistance near the two sides to be higher. The difference in setting the resistance can be achieved by adjusting the diameter of the heating element to be different. For example, the diameter of the heating element near the middle can be set to be thicker, while the diameter of the heating element near the two sides can be set to be thinner, so as to achieve a low resistance of the heating element in the middle and a high resistance of the heating elements on both sides.

[0040] For another example, the heating power in the middle of the second heating component 13 is less than the heating power on both sides, which can be achieved by setting a plurality of heating elements at intervals, wherein the heating elements near the middle are relatively spaced apart, while the heating elements near the two sides are relatively spaced apart. The heat generated by the heating elements with a larger spacing is more dispersed, so the total heat is lower, while the heat generated by the heating elements with a smaller spacing is more concentrated, so the total heat is higher. Optionally, on the basis of different spacings, the resistance of the heating elements can also be set to be different, so as to further adjust the difference in heating power of different parts of the second heating component 13.

[0041] For another example, the heating power in the middle of the second heating assembly 13 is smaller than the heating power on both sides, which can be achieved by setting multiple heating elements at even intervals and with the same heating power, but setting a heat insulating element between the middle of the second heating assembly 13 and the wafer boat 2. The heating power in the middle of the second heating assembly 13 is smaller than the heating power on both sides, which can also be achieved by a combination of the above-mentioned methods, which is not specifically limited here.

[0042] The following is an exemplary introduction to a specific embodiment in which the heating power of the first heating component 12 is uniformly set and the heating power in the middle of the second heating component 13 is less than the heating power on both sides.

[0043] In some embodiments, in combination Figure 2The first heating assembly 12 includes a plurality of first heating elements 121, and the first heating elements 121 are arranged in a third direction (combined with Figure 2 The first heating element 121 is arranged evenly spaced in the second direction. The first heating element 121 can be a heating rod, the axial direction of the heating rod is the third direction, and the first direction and the second direction are two perpendicular radial directions of the heating rod. The first heating element 121 can also be a spiral heating wire, and the direction of the spiral axis can be the third direction.

[0044] Among them, the direction in which the first heating elements 121 are arranged at intervals can be the arrangement direction of the boat leaf 21, that is, the second direction. The direction in which the first heating elements 121 are arranged at intervals can also be the direction in which the second heating components 13 are relatively spaced apart. In the above manner, the heating power of the first heating component 12 can be evenly distributed. Optionally, the first heating component 12 may also include a connector, which can connect the multiple first heating elements 121 spaced apart end to end, thereby connecting the multiple first heating elements 121 in series. The connector itself can also produce a thermal effect under the action of electric current. In other words, the first heating component 12 can be a heating element arranged in a serpentine shape. In some embodiments, the first heating component 12 includes a carrier plate, and the first heating element 121 and the connector are armored on the carrier plate.

[0045] In some embodiments, the spacing between the first heating elements 121 is 20-40 mm, such as 23 mm, 28 mm, 32 mm or 37 mm. Optionally, six first heating elements 121 are provided, and the ratio of the spacing between two adjacent first heating elements 121 is 1:1:1:1:1.

[0046] In some embodiments, in combination Figure 3 The second heating assembly 13 includes a plurality of second heating elements 131, and the second heating elements 131 are arranged in a third direction (combined with Figure 3 The second heating element 131 is arranged at intervals in the first direction. The second heating element 131 can be a heating rod, the axial direction of the heating rod is the third direction, and the first direction and the second direction are two perpendicular radial directions of the heating rod. The second heating element 131 can also be a spiral heating wire, and the direction of the spiral axis can be the third direction.

[0047] Among them, the direction in which the second heating elements 131 are arranged at intervals can be the height direction of the boat leaf 21, that is, the first direction. The direction in which the second heating elements 131 are arranged at intervals can also be the direction in which the first heating assembly 12 is relatively spaced. The interval between two adjacent second heating elements 131 located in the middle of the second heating assembly 13 is greater than the interval between two adjacent second heating elements 131 located on both sides of the second heating assembly 13. In other words, the distribution of the second heating elements 131 is relatively loose in the middle of the second heating assembly 13, and relatively tight on both sides of the second heating assembly 13. By adjusting the intervals between the second heating elements 131, the distribution density of the second heating elements 131 can be adjusted, so that the heating power of the second heating assembly 13 is increased from the middle to both sides. The second heating assembly 13 can also include a connector, which can connect multiple second heating elements 131 arranged at intervals end to end, thereby connecting multiple second heating elements 131 in series. The connector itself can also produce a thermal effect under the action of an electric current. In other words, the second heating assembly 13 can be a heating element arranged in a serpentine shape.

[0048] In some embodiments, the second heating assembly 13 includes a carrier plate, and the second heating element 131 and the connecting element are armored on the carrier plate.

[0049] In some embodiments, the minimum spacing between adjacent second heating elements 131 is 20 to 40 mm. For example, 23 mm, 28 mm, 32 mm or 37 mm. The maximum spacing between adjacent second heating elements 131 is 40 to 80 mm, for example, 46 mm, 56 mm, 64 mm or 74 mm. Optionally, four first heating elements 121 are provided, and the ratio of the spacing between two adjacent second heating elements 122 is 1:1.3 to 3:1. For example, 1:1.5:1, 1:2:1 or 1:2.5:1.

[0050] In some embodiments, in combination Figure 1 , Figure 5 and Figure 6 , the deposition device 1 also includes an auxiliary heating component, which is arranged in the process tube 112. The auxiliary heating component includes a first auxiliary heating component 14 respectively arranged above the wafer boat 2 and a second auxiliary heating component 15 arranged below the wafer boat 2. The first auxiliary heating component 14 includes at least two first auxiliary heating parts 141 arranged at intervals, and the second auxiliary heating component 15 includes at least two second auxiliary heating parts 151 arranged at intervals. The auxiliary heating component can heat the temperature of the wafer boat 2 more directly in the process tube 112, and compensate for the heat dissipated during the heating process. Optionally, the spacing between the first auxiliary heating parts 141 is greater than the spacing between the second auxiliary heating parts 151. The first auxiliary heating component 14 and the second auxiliary heating component 15 can compensate for the unevenness of the thermal field during the heating process of the first heating component 12, thereby assisting the first heating component 12 to achieve a uniform thermal field.

[0051] In some embodiments, the heating power of the middle of the first auxiliary heating component 14 is less than the heating power of the two sides of the first auxiliary heating component 14. In other words, the first auxiliary heating component 14 performs auxiliary heating on both sides of the wafer boat 2. In the second direction, the heat from the middle to the two sides will gradually decrease as the heat dissipation effect becomes stronger due to getting closer to the edge. By setting the first auxiliary heating component 14 to correspond to the two sides of the wafer boat 2 respectively, the reduction of the heat on both sides can be compensated, thereby increasing the uniformity of the thermal field. Optionally, a plurality of first auxiliary heating elements 141 are arranged at intervals, and the spacing between the adjacent two first auxiliary heating elements 141 near the middle of the first auxiliary heating component 14 is greater than the spacing between the adjacent two first auxiliary heating elements 141 on both sides of the first auxiliary heating component 14. In other words, the spacing between the adjacent first auxiliary heating elements 141 near the middle of the wafer boat 2 is larger, and the spacing between the adjacent first auxiliary heating elements 141 near the two sides of the wafer boat 2 is smaller, thereby specifically compensating for the heat lost from the two sides of the wafer boat 2 in the second direction. .

[0052] In other embodiments, the number of the first auxiliary heating elements 141 may be an even number, so that when the first auxiliary heating elements 141 are symmetrically spaced, the middle of the wafer boat 2 will not face one of the first auxiliary heating elements 141, thereby achieving a relatively low heating efficiency in the middle.

[0053] Optionally, the spacing between the first auxiliary heating elements 141 may be between 50-70 mm, for example, 53 mm, 58 mm, 65 mm or 76 mm.

[0054] Specifically, in some embodiments, the wafer boat 2 also includes boat feet 22 that are spaced apart, and the projection of the second auxiliary heating element 151 on the wafer boat 2 is located between the boat feet 22. On the one hand, since the wafer boat 2 has boat feet 22, and the boat feet 22 need to be supported on the carrier or the electrode feed assembly, the second auxiliary heating element 151 can be disposed between the boat feet 22 in order to reduce interference with other components. On the other hand, due to the existence of the boat feet 22 structure, the heat dissipation efficiency of the part with the boat feet 22 structure is relatively low, that is, the thickness of the boat feet 22 itself can have a certain insulation effect on the temperature of the wafer boat 2. Therefore, the part between the boat feet 22 of the wafer boat 2 requires the second auxiliary heating element 151 to compensate for the heat. Optionally, the spacing between the second auxiliary heating elements 151 can be between 20-30 mm, for example, 23 mm, 25 mm or 28 mm.

[0055] In some embodiments, in combination Figure 7The process chamber 1121 has a receiving area, and the wafer boat 2 is placed in the receiving area. In the first direction, the receiving area is centrally arranged, and the ratio of the length of the receiving area in the first direction to the spacing distance between the first heating components 12 is less than 3:4. In the second direction, the receiving area is centrally arranged, and the ratio of the length of the receiving area in the second direction to the spacing distance between the second heating components 13 is less than 4:5.

[0056] Based on the first heating component 12, the second heating component 13, the first auxiliary heating component 14 and the second auxiliary heating component 15 in the above-mentioned embodiment, a relatively uniform thermal field can be formed inside the process chamber 1121. However, the thermal field inside the process chamber 1121 is not uniform everywhere, but there are, for example, Figure 7 A relatively uniform area is shown in the simulation schematic diagram. The inventor's research shows that, based on the above embodiment, a more uniform thermal field exists in the accommodation area described in this embodiment. By placing the wafer boat 2 in the accommodation area, the wafer boat 2 can be located in a position in the process chamber 1121 where the thermal field is more uniform, thereby optimizing the coating effect.

[0057] In some embodiments, in combination Figure 1 and Figure 7 , in the spacing direction of the first heating components 12 (first direction), that is, in the height direction of the wafer boat 2, the wafer boat 2 is centrally arranged in the process chamber 1121. Thereby, the wafer boat 2 can be in the central position where the thermal field is relatively uniform as much as possible. In other words, the upper and lower sides of the wafer boat 2 are at the same distance from the first heating components 12 on both sides. In some embodiments, the ratio of the height of the wafer boat 2 to the spacing distance between the first heating components 12 is less than 3:4, for example 2:4 or 1:4. If the height ratio of the wafer boat 2 is too high, it will exceed the part where the thermal field is relatively uniform, resulting in a decrease in the uniformity of the coating.

[0058] In some embodiments, in the spacing direction of the second heating components 13, that is, in the width direction of the wafer boat 2, the wafer boat 2 is centrally arranged in the process chamber 1121. This allows the wafer boat 2 to be in a central position where the thermal field is relatively uniform as much as possible. In other words, the two lateral sides of the wafer boat 2 are at the same distance from the second heating components 13 on both sides. In some embodiments, the ratio of the width of the wafer boat 2 to the spacing distance between the second heating components 13 is less than 4:5, such as 3:5 or 2:5. If the width of the wafer boat 2 accounts for too high a proportion, it will exceed the portion where the thermal field is relatively uniform, resulting in a decrease in the uniformity of the coating.

[0059] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A deposition device, characterized in that: include: A main body having a process cavity; A heating assembly, the heating assembly comprising a first heating assembly and a second heating assembly, the first heating assembly being respectively arranged on two opposite sides of the main body in a first direction, and the second heating assembly being respectively arranged on two opposite sides of the main body in a second direction different from the first direction; Among them, the heating power of the first heating component is uniformly distributed; in the first direction, the heating power of the middle part of the second heating component is less than the heating power on both sides of the second heating component, and the heating power on both sides of the second heating component is less than or equal to the heating power of the first heating component.

2. The deposition device according to claim 1, characterized in that: The first direction is the direction of gravity, the main body has a top side and a bottom side arranged opposite to each other in the first direction, and two side sides arranged opposite to each other in the second direction, the second direction is perpendicular to the first direction, the first heating component is respectively arranged on the top side and the bottom side, and the second heating component is respectively arranged on the two side sides.

3. The deposition device according to claim 1, characterized in that: The process chamber is used to accommodate a wafer boat, the wafer boat includes a plurality of boat pages arranged side by side and spaced apart, the boat pages are arranged along the second direction, a space for accommodating substrates is formed between the boat pages, and the plane where the boat pages are located is parallel to the first direction; the wafer boat also includes boat feet arranged at the bottom of the boat pages, the boat feet are spaced apart in the second direction; The main body includes an outer shell and a process tube, wherein the process tube is arranged in the outer shell, the process tube has the process cavity, a heat-conducting space is formed between the process tube and the outer shell, the heating component is arranged in the heat-conducting space, and the deposition equipment also includes an auxiliary heating component, which is arranged in the process tube.

4. The deposition device according to any one of claims 1 to 3, characterized in that: The first heating assembly includes a plurality of first heating elements, which extend along a third direction, which is perpendicular to the first direction and the second direction, and the first heating elements are evenly spaced in the second direction; the second heating assembly includes a plurality of second heating elements, which are spaced in the first direction, and extend along the third direction; the interval between the second heating elements located in the middle of the second heating assembly is greater than the interval between the second heating elements located on both sides of the second heating assembly.

5. The deposition device according to claim 4, characterized in that: The spacing between the first heating elements is 20-40 mm, the minimum spacing between the second heating elements is 20-40 mm, and the maximum spacing between the second heating elements is 40-80 mm.

6. The deposition device according to any one of claims 1 to 3, characterized in that: The process chamber is used to accommodate the wafer boat, and the deposition equipment also includes an auxiliary heating component, which includes a first auxiliary heating component and a second auxiliary heating component arranged on both sides of the wafer boat in the first direction, the first auxiliary heating component includes at least two first auxiliary heating components arranged at intervals in the second direction, and the second auxiliary heating component includes at least two second auxiliary heating components arranged at intervals in the second direction.

7. The deposition device according to claim 6, characterized in that: The bottom of the wafer boat further includes boat feet that are spaced apart. The second auxiliary heating component is disposed on one side of the bottom of the wafer boat. The projection of the second auxiliary heating component on the wafer boat is located between the boat feet.

8. The deposition device according to claim 6, characterized in that: The spacing between the first auxiliary heating elements is 50-70 mm, and the spacing between the second auxiliary heating elements is 20-30 mm.

9. The deposition device according to claim 6, characterized in that: The projections of at least two of the first auxiliary heating elements in the first direction coincide with the projections of at least two of the second auxiliary heating elements in the first direction.

10. The deposition device according to any one of claims 1 to 3, characterized in that: The process chamber is used to accommodate the wafer boat, and the process chamber has an accommodating area, and the wafer boat is placed in the accommodating area; In the first direction, the accommodating area is centrally arranged, and the ratio of the length of the accommodating area in the first direction to the spacing distance between the first heating components is less than 3:4; In the second direction, the accommodating area is centrally arranged, and the ratio of the length of the accommodating area in the second direction to the spacing distance between the second heating components is less than 4:5.

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