Cleaning end point detection device and method for chemical deposition table and computer equipment

Abstract

The invention relates to the technical field of chemical vapor deposition, and discloses a cleaning end point detection device and method for a chemical deposition table and computer equipment, and the method comprises the following steps: introducing preset gas into a cavity of chemical vapor deposition equipment for cleaning to generate reaction gas; the first hand valve is opened, the second hand valve is closed, the reaction gas flows into the concentration meter, the concentration of SiF4 gas in the reaction gas in the concentration meter is obtained, and when the concentration of the SiF4 gas is lower than a preset value and lasts for preset time, a cleaning end point instruction is sent out. By detecting the concentration of the SiF4 gas in the reaction gas generated in the cleaning process, the precision of the cleaning process is ensured, the problems of not-in-place cleaning and over-etching cleaning are avoided, and the cleaning efficiency and the cleaning effect are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of chemical vapor deposition, and in particular to a cleaning endpoint detection device, method and computer equipment for a chemical deposition table. Background Art

[0002] In the existing CVD equipment (Chemical Vapor Deposition) operation and maintenance system, the cleaning process is a key link in maintaining equipment performance and ensuring production quality. Its execution effect directly affects the stability of subsequent processes and the yield of products. However, the currently widely used method of configuring cleaning menus and fixed cleaning times based on experience can meet daily cleaning needs to a certain extent, but it also exposes many limitations and potential problems.

[0003] First, the cleaning menu does not match, and the products generated in the chamber cannot be effectively cleaned. This is mainly due to the fact that during different CVD processes, a wide variety of deposits with different properties will be generated in the chamber. If the cleaning menu is not customized for the specific pollutants generated by a specific process, the cleaning effect may be greatly reduced; secondly, the cleaning time is set too short, resulting in incomplete cleaning of the chamber. If the cleaning time set based on experience is not enough to fully expose and dissolve or peel off all the deposits in the chamber, then the residues that are not effectively removed may affect the product quality in the subsequent process, and may even accelerate the aging of the equipment and shorten the service life of the equipment; finally, the traditional method also has the problem of too long cleaning time, which affects the life of the chamber spare parts. Excessive cleaning not only wastes resources, but may also cause unnecessary wear or corrosion to the precision parts inside the chamber, such as heating elements, nozzles, seals, etc. Long-term exposure to the cleaning medium will accelerate the aging of the materials of these spare parts, reduce their mechanical properties and sealing, and ultimately lead to reduced equipment performance, increased maintenance costs and downtime. Summary of the invention

[0004] In view of this, the present invention provides a cleaning endpoint detection device, method and computer equipment for a chemical deposition station to solve the problems of mismatching cleaning process menus, incomplete cleaning and over-cleaning in traditional chemical vapor deposition equipment.

[0005] In a first aspect, the present invention provides a cleaning endpoint detection device for a chemical deposition station, the device comprising:

[0006] A chemical vapor deposition device, wherein a concentration meter is arranged on the tail gas pipeline of the chemical vapor deposition device so that the reaction gas generated by the chemical vapor deposition device flows to the concentration meter;

[0007] A concentration meter, including a gas outlet and a gas inlet, connected to a host computer, for detecting the concentration of SiF4 gas in the reaction gas;

[0008] A first hand valve is connected to the gas inlet of the concentration meter, and the first hand valve is used to control whether the reaction gas flows to the concentration meter;

[0009] The second hand valve is connected to the gas outlet of the concentration meter and is used to discharge the reaction gas;

[0010] The control unit is used to issue a cleaning endpoint instruction when the concentration of SiF4 gas is lower than a preset value and lasts for a preset time.

[0011] The cleaning endpoint detection device of the chemical deposition table provided in the embodiment of the present invention can monitor the concentration of SiF4 (silicon tetrafluoride) gas in the reaction gas in real time by setting a concentration meter device on the tail gas pipeline of the chemical vapor deposition (CVD) equipment. By detecting the concentration change of SiF4, the endpoint of the cleaning process can be accurately determined, thereby avoiding unnecessary over-cleaning or under-cleaning, which can not only save time and resources, but also improve production efficiency and equipment utilization.

[0012] In an optional embodiment, the concentration meter is arranged on a branch of the tail gas pipeline of the chemical vapor deposition equipment.

[0013] The cleaning endpoint detection device of the chemical deposition station provided in the embodiment of the present invention can ensure the continuity and stability of the main process flow by installing the concentration meter on the branch of the exhaust pipeline. The branch design also makes the installation, commissioning and maintenance of the concentration meter more flexible and convenient. When the concentration meter needs to be calibrated, parts need to be replaced or other maintenance work needs to be performed, only the branch can be closed without affecting the operation of the entire CVD equipment.

[0014] In a second aspect, the present invention provides a cleaning endpoint detection method for a chemical deposition table, which is applied to the cleaning endpoint detection device of the above-mentioned chemical deposition table, and the method comprises:

[0015] Passing a preset gas into the chamber of the chemical vapor deposition equipment for cleaning to generate a reactive gas;

[0016] Open the first hand valve and close the second hand valve to allow the reaction gas to flow into the concentration meter;

[0017] Obtain the concentration of SiF4 gas in the reaction gas in the concentration meter;

[0018] When the concentration of SiF4 gas is lower than a preset value and lasts for a preset time, a cleaning endpoint instruction is issued.

[0019] The cleaning endpoint detection method for a chemical deposition table provided in an embodiment of the present invention controls a manual valve to allow the reaction gas to flow into a concentration meter to monitor the concentration of SiF4 gas in the reaction gas in real time. When the gas concentration is lower than a preset lower limit and remains for a preset time, it is determined as the endpoint of the cleaning process and a cleaning endpoint instruction is issued. This can not only reduce unnecessary cleaning time and improve production efficiency, but also avoid the problem of insufficient cleaning that may exist in traditional methods, thereby ensuring the cleaning effect and improving the cleaning efficiency.

[0020] In an optional implementation, obtaining the concentration of SiF4 gas in the reaction gas in the concentration meter includes:

[0021] The concentration of SiF4 gas is sampled at preset time intervals to obtain a number of sampling points;

[0022] A concentration response curve is formed based on a number of sampling points, and the concentration response curve is used to characterize the mapping relationship between the concentration of SiF4 gas and time.

[0023] The cleaning endpoint detection method for a chemical deposition table provided in an embodiment of the present invention can more accurately capture the changing trend of SiF4 gas concentration by continuous sampling and forming a concentration response curve. The concentration response curve can also display the dynamic changes of SiF4 gas concentration in real time, which is convenient for the automatic control system to perform real-time monitoring and analysis, timely adjust the cleaning process, ensure the cleaning effect, and also make it easier to realize automatic judgment of the cleaning endpoint.

[0024] In an optional implementation, when the concentration of SiF4 gas is lower than a preset value and lasts for a preset time, a cleaning endpoint instruction is issued, including:

[0025] Based on the concentration response curve, a sampling point at which the concentration of SiF4 gas is lower than a preset value for the first time is determined as a first sampling point;

[0026] Determine a preset number of sampling points immediately following the first sampling point as a number of observation sampling points;

[0027] When the concentrations of SiF4 gas corresponding to several observation sampling points are all lower than the preset value, a cleaning endpoint instruction is issued.

[0028] The cleaning endpoint detection method of the chemical deposition station provided by the embodiment of the present invention does not judge the cleaning endpoint based on the concentration data of a single sampling point alone, but is based on multiple sampling points on the concentration response curve. In this way, the changing trend of the SiF4 gas concentration can be evaluated more comprehensively, thereby improving the accuracy of judging the cleaning endpoint and avoiding misjudgment due to accidental fluctuations in data. At the same time, the present invention makes the control of the cleaning process more precise and accurate, so as to ensure the cleaning effect while minimizing unnecessary cleaning time, thereby improving production efficiency and equipment utilization.

[0029] In an optional implementation, determining a preset number of sampling points immediately following the first sampling point as a number of observation sampling points includes:

[0030] The three points immediately following the first sampling point are determined as observation sampling points.

[0031] The cleaning endpoint detection method for a chemical deposition table provided in an embodiment of the present invention determines the observation sampling points as three consecutive sampling points to avoid measurement errors or short-term concentration fluctuations. If the three consecutive sampling points are all lower than the preset value, it can better indicate that the concentration of SiF4 gas has steadily decreased. This can more effectively filter out accidental data fluctuations or noise, thereby improving the stability and reliability of the judgment. On the other hand, selecting three consecutive sampling points as the observation sampling points also avoids too many observation sampling points, which leads to unnecessary extension of cleaning time due to excessive conservatism.

[0032] In an optional embodiment, the method further includes:

[0033] When the cleaning endpoint instruction is received, the cleaning of the chemical vapor deposition equipment is stopped.

[0034] The cleaning endpoint detection method of the chemical deposition table provided in the embodiment of the present invention ensures that when the cleaning endpoint is accurately determined and an instruction is issued, the cleaning process of the chemical vapor deposition equipment can be stopped immediately. This instant response mechanism avoids unnecessary extension of the cleaning time and improves production efficiency and equipment utilization. By accurately controlling the cleaning time, the problem of impurity residue caused by insufficient cleaning and the problem of unnecessary wear or damage to certain parts of the chemical vapor deposition equipment caused by excessive cleaning can be avoided.

[0035] In a third aspect, the present invention provides a computer device, comprising: a memory and a processor, the memory and the processor being communicatively connected to each other, the memory storing computer instructions, and the processor executing the cleaning endpoint detection method for a chemical deposition table according to the second aspect or any corresponding embodiment thereof by executing the computer instructions.

[0036] In a fourth aspect, the present invention provides a computer-readable storage medium having computer instructions stored thereon, the computer instructions being used to enable a computer to execute the cleaning endpoint detection method for a chemical deposition station according to the second aspect or any corresponding embodiment thereof.

[0037] In a fifth aspect, the present invention provides a computer program product, comprising computer instructions for causing a computer to execute the cleaning endpoint detection method for a chemical deposition station according to the second aspect or any corresponding embodiment thereof. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0039] Figure 1 is a schematic diagram of a cleaning endpoint detection device of a chemical deposition station according to an embodiment of the present invention;

[0040] Figure 2 is a schematic diagram of a concentration response curve of a cleaning endpoint detection method of a chemical deposition station according to an embodiment of the present invention;

[0041] Figure 3 is a schematic flow chart of a cleaning endpoint detection method for a chemical deposition station according to an embodiment of the present invention;

[0042] Figure 4 It is a schematic diagram of the hardware structure of a computer device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0044] In the current CVD equipment (Chemical Vapor Deposition) operation and maintenance system, the cleaning process is the core link to maintain the efficient operation of the equipment and ensure production quality. Its execution efficiency is directly related to the stability of the subsequent production process and the guarantee of product yield. However, the traditional cleaning plan based on experience and the fixed cleaning time strategy can meet basic cleaning needs, but it also exposes many limitations and potential problems.

[0045] First, the cleaning solution is single and it is difficult to accurately deal with the diverse deposits in the chamber during different CVD processes; secondly, the unreasonable setting of the cleaning time has also become a significant problem. If the cleaning time is set too short, it may not be enough to completely remove the deposits in the chamber. The residual pollutants will become a quality risk in subsequent processes and even accelerate equipment wear and shorten the service life of the equipment. On the contrary, if the cleaning time is too long, it may cause unnecessary damage to precision components in the chamber such as heating elements, nozzles and seals, shorten the life of spare parts through wear and corrosion mechanisms, and thus affect the overall performance of the equipment, increase maintenance costs and downtime risks. Therefore, exploring more scientific and flexible cleaning strategies to optimize cleaning effects and maximize resource utilization has become an important issue that needs to be urgently addressed in the current field of CVD equipment operation and maintenance.

[0046] The embodiment of the present invention provides a cleaning endpoint detection device for a chemical deposition table. By setting a concentration meter device on the tail gas pipeline of a chemical vapor deposition (CVD) device, the concentration of SiF4 (silicon tetrafluoride) gas in the reaction gas can be monitored in real time. And by detecting the concentration change of SiF4, the endpoint of the cleaning process can be accurately determined, thereby ensuring the accuracy of the cleaning process and achieving the effect of avoiding the problems of inadequate cleaning and over-cleaning.

[0047] According to an embodiment of the present invention, a cleaning endpoint detection device embodiment of a chemical deposition table is provided, the device comprising:

[0048] A chemical vapor deposition device, wherein a concentration meter 1 is arranged on the tail gas pipeline of the chemical vapor deposition device so that the reaction gas generated by the chemical vapor deposition device flows to the concentration meter 1;

[0049] A concentration meter 1, comprising a gas outlet 2 and a gas inlet 3, the concentration meter 1 is connected to a host computer and is used to detect the concentration of SiF4 gas in the reaction gas;

[0050] A first manual valve 4 is connected to the gas inlet 3 of the concentration meter 1, and the first manual valve 4 is used to control whether the reaction gas flows to the concentration meter 1;

[0051] The second manual valve 5 is connected to the gas outlet 2 of the concentration meter 1 and is used for discharging the reaction gas.

[0052] The control unit is used to issue a cleaning endpoint instruction when the concentration of SiF4 gas is lower than a preset value and lasts for a preset time.

[0053] like Figure 1As shown, the concentrator 1 is arranged on the exhaust pipeline of the chemical vapor deposition equipment, the first hand valve 4 is connected to the air inlet 3 of the concentrator 1 through a pipeline, and the second hand valve 5 is connected to the air outlet 2 of the concentrator 1 through a pipeline. When the cleaning endpoint detection is required, the first hand valve is opened and the second hand valve 5 is closed to allow the reaction gas to flow to the concentrator 1; when the cleaning endpoint detection is not required, the first hand valve 4 is closed and the second hand valve 5 is opened.

[0054] The concentration meter 1 is connected to the host computer, and the concentration threshold of SiF4 gas is calculated based on the budget software test algorithm. When the concentration of SiF4 gas is continuously lower than the threshold, it is used to indicate that the cleaning of the chemical vapor deposition equipment has met the preset requirements. The concentration meter 1 samples the concentration of SiF4 gas in the reaction gas at a preset time interval to obtain a number of sampling points, and forms a concentration response curve based on the several sampling points. The concentration response curve is as follows: Figure 2 As shown, it is used to characterize the mapping relationship between the concentration of SiF4 gas and time. When cleaning just starts, the concentration curve will show a sharp climb until it reaches the peak point y1 and then slowly declines. When the SiF4 gas concentration corresponding to the sampling point drops below the threshold point and lasts for a preset time, the concentration meter 1 will send a cleaning endpoint signal to the software host computer. After the software receives the signal, the cleaning process ends automatically.

[0055] In some optional embodiments, the concentration meter 1 is arranged on a branch of the exhaust gas pipeline of the chemical vapor deposition equipment.

[0056] The concentration meter 1 is arranged on the branch of the tail gas pipeline of the chemical vapor deposition equipment to ensure the continuity and stability of the main process flow. The branch design also makes the installation, commissioning and maintenance of the concentration meter 1 more flexible and convenient.

[0057] The cleaning endpoint detection device of the chemical deposition station in this embodiment is presented in the form of a functional unit, where the unit refers to an ASIC (Application Specific Integrated Circuit) circuit, a processor and memory that executes one or more software or fixed programs, and / or other devices that can provide the above functions.

[0058] According to an embodiment of the present invention, an embodiment of a cleaning endpoint detection method for a chemical deposition table is provided. It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0059] In this embodiment, a cleaning endpoint detection method for a chemical deposition station is provided. Figure 3is a flow chart of a cleaning endpoint detection method of a chemical deposition station according to an embodiment of the present invention. Figure 3 As shown, the process includes the following steps:

[0060] Step S301 , introducing a preset gas into a chamber of a chemical vapor deposition device for cleaning to generate a reaction gas.

[0061] Specifically, a preset gas is prepared for cleaning based on the residue inside the CVD equipment, such as silicon oxide, silicon nitride or other similar chemical gases. The choice of gas depends on the type and nature of the pollutants that need to be removed from the CVD equipment. On this basis, according to the cleaning requirements of the CVD equipment and the characteristics of the preset gas, key parameters in the cleaning process, such as gas flow rate, temperature, etc., are set, and the supply valve of the preset gas is opened to pass the gas into the chamber of the CVD equipment.

[0062] Furthermore, during the cleaning process, the preset gas will chemically react with the residues in the chamber to generate reaction gases including SiF 4 , and these reaction gases will be discharged through the exhaust pipe of the CVD equipment.

[0063] Step S302, open the first manual valve and close the second manual valve to allow the reaction gas to flow into the concentration meter.

[0064] Specifically, the purpose of opening the first hand valve and closing the second hand valve connected to the gas outlet of the concentration meter is to prevent the reaction gas from being discharged directly from the concentration meter without being detected, thereby ensuring that all reaction gases can be detected by the concentration meter.

[0065] Step S303, obtaining the concentration of SiF4 gas in the reaction gas in the concentration meter.

[0066] Specifically, since SiF4 is a gas that will definitely be generated during the cleaning process of the CVD equipment, the concentration of SiF4 can be detected to characterize the degree of cleanliness. Specifically, first, at the beginning of each cleaning, the host computer will send a concentration reset instruction to the concentration meter, and the concentration meter will reset the concentration to zero, and then start to detect the SiF4 concentration in the post-reaction gas flowing in through its air inlet. The concentration meter sends the current SiF4 concentration to the host computer via 485 communication every 100ms, and the host computer generates a concentration curve based on the received concentration value.

[0067] Step S304: When the concentration of SiF4 gas is lower than a preset value and lasts for a preset time, a cleaning endpoint instruction is issued.

[0068] Specifically, the preset software of the host computer reads the concentration value of SiF4 from the concentration meter. Then, the read concentration value is compared with the preset value. This preset value is the concentration threshold of SiF4 gas calculated by the budget-based software test algorithm. The calculation process of this threshold is determined by combining factors such as cleaning requirements, equipment characteristics, and historical data to determine whether the cleaning effect meets the standard.

[0069] Furthermore, when the concentration value of SiF4 is lower than the preset value in a certain reading, the concentration of SiF4 gas will continue to be monitored in the subsequent preset time period to confirm whether this low concentration state lasts for the preset time. The preset time is set to ensure the stability and reliability of the cleaning effect and avoid misjudgment due to short-term concentration fluctuations.

[0070] Furthermore, if the concentration of SiF4 gas remains below the preset value within the preset time, the system determines that the cleaning process has reached the end point. At this time, the system will issue a cleaning end point instruction through the host computer or the control interface.

[0071] In summary, first prepare the preset gas for cleaning according to the internal residue of the CVD equipment, such as hydrogen fluoride (HF) or other similar chemical gases. Then, after connecting the concentration meter to the host computer, the purpose of opening the first hand valve and closing the second hand valve connected to the outlet of the concentration meter is to prevent the reaction gas from being discharged directly from the concentration meter without detection, thereby ensuring that all reaction gases can be detected by the concentration meter. The budget-based software test algorithm calculates the concentration threshold of SiF4 gas. When the concentration of SiF4 gas continues to be lower than the threshold and continues for a preset time, it indicates that the cleaning of the chemical vapor deposition equipment has met the preset requirements. The concentration meter will send a cleaning endpoint signal to the software host computer.

[0072] Preferably, the concentration threshold of SiF4 gas is set to 0.9.

[0073] In some optional implementations, obtaining the concentration of SiF4 gas in the reaction gas in the concentration meter includes:

[0074] The concentration of SiF4 gas is sampled at preset time intervals to obtain a number of sampling points;

[0075] A concentration response curve is formed based on a number of sampling points, and the concentration response curve is used to characterize the mapping relationship between the concentration of SiF4 gas and time.

[0076] First, set the sampling parameters, sample the concentration of SiF4 gas in the reaction gas at a preset time interval to obtain several sampling points. The time interval should be able to capture the details of the SiF4 concentration change and avoid too many data points due to too short an interval, which increases the difficulty of processing. Then, form a concentration response curve based on several sampling points. The concentration response curve is as follows: Figure 2 As shown in the figure, the horizontal axis of this response curve is time, and the vertical axis is the concentration of SiF4 gas, which is used to characterize the mapping relationship between the concentration of SiF4 gas and time, and intuitively shows the change of SiF4 concentration over time. When cleaning just starts, the concentration response curve will show a sharp climb until it reaches the peak point y1 and then slowly declines. When the SiF4 gas concentration corresponding to the sampling point drops below the threshold point and lasts for a preset time, it is judged that the cleaning end point has been reached.

[0077] In some optional implementations, when the concentration of SiF4 gas is lower than a preset value and lasts for a preset time, a cleaning endpoint instruction is issued, including:

[0078] Based on the concentration response curve, a sampling point at which the concentration of SiF4 gas is lower than a preset value for the first time is determined as a first sampling point;

[0079] Determine a preset number of sampling points immediately following the first sampling point as a number of observation sampling points;

[0080] When the concentrations of SiF4 gas corresponding to several observation sampling points are all lower than the preset value, a cleaning endpoint instruction is issued.

[0081] First, on the concentration response curve, find the sampling point where the SiF4 gas concentration is lower than the preset value for the first time, and determine it as the first sampling point. Then, according to the characteristics and requirements of the cleaning process, select a preset number of sampling points immediately following the first sampling point for subsequent observation and confirmation to further confirm whether the cleaning process has indeed reached the end point. By confirming in turn that the SiF4 gas concentration values ​​corresponding to each observation sampling point are lower than the preset value, it is considered that the cleaning process has reached a stable low-concentration state, which can be judged as the cleaning end point, and the cleaning end point instruction is immediately issued.

[0082] Preferably, three points immediately following the first sampling point are determined as observation sampling points.

[0083] When the values ​​of three subsequent points immediately following the first sampling point are all smaller than the threshold value and smaller than the first sampling point, a cleaning endpoint instruction is immediately issued.

[0084] In some optional embodiments, the method further comprises:

[0085] When the cleaning endpoint instruction is received, the cleaning of the chemical vapor deposition equipment is stopped.

[0086] After receiving the cleaning endpoint instruction, the cleaning of the chemical vapor deposition equipment is stopped immediately and the cleaning gas supply is turned off. This avoids unnecessary extension of the cleaning time, improves production efficiency and equipment utilization, and avoids the problem of unnecessary wear or damage to certain parts of the chemical vapor deposition equipment caused by excessive cleaning.

[0087] The embodiment of the present invention also provides a computer device, see Figure 4 , Figure 4 is a schematic diagram of the structure of a computer device provided by an optional embodiment of the present invention, such as Figure 4 As shown, the computer device includes: one or more processors 10, a memory 20, and interfaces for connecting various components, including high-speed interfaces and low-speed interfaces. Various components are connected to each other using different buses for communication, and can be installed on a common mainboard or installed in other ways as needed. The processor can process the instructions executed in the computer device, including instructions stored in or on the memory to display the graphical information of the GUI on an external input / output device (such as, a display device coupled to the interface). In some optional embodiments, if necessary, multiple processors and / or multiple buses can be used together with multiple memories and multiple memories. Similarly, multiple computer devices can be connected, and each device provides some necessary operations (for example, as a server array, a group of blade servers, or a multi-processor system). Figure 4 A processor 10 is taken as an example.

[0088] The processor 10 may be a central processing unit, a network processor or a combination thereof. The processor 10 may further include a hardware chip. The hardware chip may be a dedicated integrated circuit, a programmable logic device or a combination thereof. The programmable logic device may be a complex programmable logic device, a field programmable gate array, a general purpose array logic or any combination thereof.

[0089] The memory 20 stores instructions executable by at least one processor 10, so that the at least one processor 10 executes the method shown in the above embodiment.

[0090] The memory 20 may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application required for at least one function; the data storage area may store data created according to the use of the computer device, etc. In addition, the memory 20 may include a high-speed random access memory, and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage device. In some optional embodiments, the memory 20 may optionally include a memory remotely arranged relative to the processor 10, and these remote memories may be connected to the computer device via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0091] The memory 20 may include a volatile memory, such as a random access memory; the memory may also include a non-volatile memory, such as a flash memory, a hard disk or a solid state drive; the memory 20 may also include a combination of the above types of memory.

[0092] The computer device also includes an input device 30 and an output device 40. The processor 10, the memory 20, the input device 30 and the output device 40 may be connected via a bus or other means. Figure 4 The example of connecting through bus is taken in the following.

[0093] The input device 30 can receive input digital or character information, and generate key signal input related to the user settings and function control of the computer device, such as a touch screen, a keypad, a mouse, a track pad, a touch pad, an indicator bar, one or more mouse buttons, a trackball, a joystick, etc. The output device 40 may include a display device, an auxiliary lighting device (e.g., an LED) and a tactile feedback device (e.g., a vibration motor), etc. The above-mentioned display device includes but is not limited to a liquid crystal display, a light emitting diode, a display and a plasma display. In some optional embodiments, the display device can be a touch screen.

[0094] The embodiment of the present invention also provides a computer-readable storage medium. The method according to the embodiment of the present invention can be implemented in hardware, firmware, or can be implemented as a computer code that can be recorded in a storage medium, or can be implemented as a computer code that is originally stored in a remote storage medium or a non-temporary machine-readable storage medium and will be stored in a local storage medium through a network download, so that the method described herein can be stored in such software processing on a storage medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware. Among them, the storage medium can be a magnetic disk, an optical disk, a read-only storage memory, a random access memory, a flash memory, a hard disk or a solid-state hard disk, etc.; further, the storage medium can also include a combination of the above types of memories. It can be understood that a computer, a processor, a microprocessor controller, or programmable hardware includes a storage component that can store or receive software or computer code. When the software or computer code is accessed and executed by a computer, a processor, or hardware, the method shown in the above embodiment is implemented.

[0095] A part of the present invention may be applied as a computer program product, such as a computer program instruction, which, when executed by a computer, can call or provide the method and / or technical solution according to the present invention through the operation of the computer. Those skilled in the art should understand that the existence of the computer program instruction in a computer-readable medium includes, but is not limited to, a source file, an executable file, an installation package file, etc., and accordingly, the way in which the computer program instruction is executed by the computer includes, but is not limited to: the computer directly executes the instruction, or the computer compiles the instruction and then executes the corresponding compiled program, or the computer reads and executes the instruction, or the computer reads and installs the instruction and then executes the corresponding installed program. Here, the computer-readable medium may be any available computer-readable storage medium or communication medium accessible to the computer.

[0096] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations are all within the scope defined by the appended claims.

Claims

1. A cleaning endpoint detection device for a chemical deposition table, characterized in that: The device comprises: A chemical vapor deposition device, wherein a concentration meter is arranged on the tail gas pipeline of the chemical vapor deposition device so that the reaction gas generated by the chemical vapor deposition device flows to the concentration meter; The concentration meter comprises a gas outlet and a gas inlet, and the concentration meter is connected to a host computer and is used to detect the concentration of SiF4 gas in the reaction gas; a first manual valve connected to the gas inlet of the concentration meter, wherein the first manual valve is used to control whether the reaction gas flows to the concentration meter; A second hand valve, connected to the gas outlet of the concentration meter, for discharging the reaction gas; The control unit is used to issue a cleaning endpoint instruction when the concentration of the SiF4 gas is lower than a preset value and lasts for a preset time.

2. The device according to claim 1, characterized in that The concentration meter is arranged on a branch of the tail gas pipeline of the chemical vapor deposition equipment.

3. A method for detecting the cleaning endpoint of a chemical deposition station, characterized in that: Applied to the device of claim 1 or 2, the method comprises: Passing a preset gas into the chamber of the chemical vapor deposition equipment for cleaning to generate a reactive gas; Opening the first hand valve and closing the second hand valve to allow the reaction gas to flow into the concentration meter; Obtaining the concentration of SiF4 gas in the reaction gas in the concentration meter; When the concentration of the SiF4 gas is lower than a preset value and lasts for a preset time, a cleaning endpoint instruction is issued.

4. The method according to claim 3, characterized in that The obtaining of the concentration of SiF4 gas in the reaction gas in the concentration meter comprises: Sampling the concentration of the SiF4 gas at preset time intervals to obtain a plurality of sampling points; A concentration response curve is formed based on the plurality of sampling points, and the concentration response curve is used to characterize a mapping relationship between the concentration of the SiF 4 gas and time.

5. The method according to claim 4, characterized in that When the concentration of the SiF4 gas is lower than a preset value and lasts for a preset time, issuing a cleaning endpoint instruction includes: Based on the concentration response curve, determining a sampling point at which the concentration of the SiF4 gas is lower than a preset value for the first time as a first sampling point; Determining a preset number of sampling points immediately following the first sampling point as a plurality of observation sampling points; When the concentrations of the SiF4 gas corresponding to the plurality of observation sampling points are all lower than the preset value, a cleaning endpoint instruction is issued.

6. The method according to claim 5, characterized in that The step of determining a preset number of sampling points immediately following the first sampling point as a plurality of observation sampling points comprises: Three points immediately following the first sampling point are determined as the observation sampling points.

7. The method according to any one of claims 3 to 6, characterized in that The method further comprises: When the cleaning endpoint instruction is received, the cleaning of the chemical vapor deposition equipment is stopped.

8. A computer device, characterized in that: include: A memory and a processor, wherein the memory and the processor are communicatively connected to each other, the memory stores computer instructions, and the processor executes the cleaning endpoint detection method of the chemical deposition table according to any one of claims 3 to 7 by executing the computer instructions.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a computer to execute the cleaning endpoint detection method for a chemical deposition station according to any one of claims 3 to 7.

10. A computer program product, characterized in that The method comprises computer instructions for causing a computer to execute the cleaning endpoint detection method for a chemical deposition station according to any one of claims 3 to 7.

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