Power supply control device of field effect transistor

Abstract

The invention discloses a power supply control device of a field effect transistor, and the power supply control device is characterized in that the input end of the power supply control device is connected with the grid electrode of the field effect transistor, and the output end of the power supply control device is connected with the input end of a drain electrode switch module; the drain electrode of the field effect transistor is connected with the output end of the drain electrode switch module; and the drain electrode switch module is set to be closed according to the alarm signal or opened according to the operation signal. According to the technical scheme, the problem that a field effect transistor device is damaged due to circuit faults or improper debugging in the prior art is solved.

Description

Technical Field

[0001] The present invention relates to the field of power supply control of field effect tubes, and in particular to a power supply control device of field effect tubes. Background Art

[0002] Field effect transistors have low static power consumption, high switching speed and high integration, and are suitable for various electronic devices and systems, with broad application prospects. Taking field effect transistors including GAN field effect transistors as an example, when using GAN field effect transistors, it is necessary to ensure that the gate voltage is negative, and load the drain voltage after the gate negative voltage is normal to avoid damaging the device. Therefore, during the power supply process of GAN field effect transistors, the power-on and power-off sequence of the gate voltage and the drain voltage needs to be strictly controlled to protect the device.

[0003] In the related art, the protection method for the GAN field effect transistor is to monitor the input voltage of the gate processing module, wherein the gate processing module is used to generate the gate voltage of the gate of the GAN field effect transistor. In actual applications, there may be a situation where the input voltage of the gate processing module is normal, but the gate voltage of the gate of the GAN field effect transistor is abnormal, which may cause damage to the GAN field effect transistor. Summary of the invention

[0004] The embodiment of the present invention provides a power supply control device for a field effect tube, so as to at least solve the problem of high damage rate of the field effect tube in the related art.

[0005] According to an embodiment of the present invention, a power supply control device for a field effect transistor is provided, comprising: an input end of the power supply control device is connected to a gate of the field effect transistor, and an output end of the power supply control device is connected to an input end of a drain switch module; the drain of the field effect transistor is connected to an output end of the drain switch module; wherein the power supply control device is used to generate and initiate an alarm signal to the drain switch module when a gate voltage of the gate of the field effect transistor is greater than or equal to a first voltage threshold, and to generate and initiate an operation signal to the drain switch module when the gate voltage is less than the first voltage threshold; the drain switch module is configured to be closed according to the alarm signal or opened according to the operation signal.

[0006] In an exemplary embodiment, the power supply control device also includes: a first switching device, a first resistor, a second resistor and a power supply, the second resistor being connected to the gate of the field effect transistor as an input end of the power supply control device, the first resistor and the second resistor being connected, the emitter of the first switching device being connected between the first resistor and the second resistor, the base of the first switching device being grounded, the collector of the first switching device being connected to the power supply, and the first resistor being grounded; the first switching device being used to disconnect the collector and the emitter when the gate voltage is greater than or equal to the first voltage threshold, and to connect and maintain the collector and the emitter when the gate voltage is less than the first voltage threshold.

[0007] In an exemplary embodiment, the power supply control device is used to determine the voltage of the emitter as a value obtained by performing a product operation on a target quotient value and the gate voltage during the power-on process of the field effect tube or during the power-off process of the field effect tube, wherein the target quotient value is equal to a value obtained by dividing a first resistance value by a target sum value, the first resistance value is the resistance value of the first resistor, the target sum value is equal to the sum of the first resistance value and a second resistance value, and the second resistance value is the resistance value of the second resistor; wherein, when the voltage of the emitter is greater than or equal to a second voltage threshold, the first switching device is set to be turned off, and when the voltage of the emitter is less than the second voltage threshold, the first switching device is set to be turned on.

[0008] In an exemplary embodiment, the power supply control device includes: a second switching device and a third resistor, the gate of the second switching device is connected to the third resistor and then connected to the power supply, the collector of the first switching device is connected to the gate of the second switching device, the drain of the second switching device is connected to the input end of the drain switch module as the output end of the power supply control device, and the source of the second switching device is connected to the power supply; the second switching device is used to disconnect the source and the drain when the gate voltage is greater than or equal to the first voltage threshold, and connect and maintain the source and the drain when the gate voltage is less than the first voltage threshold.

[0009] In an exemplary embodiment, the second switching device is used to, during the power-on process of the field effect tube or during the power-off process of the field effect tube, when the gate voltage is greater than or equal to the first voltage threshold and the first switching device is set to be turned off, the voltage of the gate of the second switching device is equal to the source voltage of the source, disconnecting the source and the drain; when the gate voltage is less than the first voltage threshold and the first switching device is set to be turned on, the voltage of the gate of the second switching device is less than the source voltage, connecting and maintaining the source and the drain.

[0010] In an exemplary embodiment, the power supply control device includes: a fourth resistor, the drain of the second switch device is connected to the fourth resistor and then grounded; the fourth resistor is used to set the alarm signal to a low level when the second switch device is disconnected.

[0011] In an exemplary embodiment, the power supply control device is used to generate and initiate the alarm signal to the drain switch module when the gate voltage of the gate of the field effect transistor is greater than or equal to the first voltage threshold and the first switch device and the second switch device are both turned off; and to generate and initiate the operation signal to the drain switch module when the gate voltage of the gate of the field effect transistor is less than the first voltage threshold and the first switch device and the second switch device are both turned on.

[0012] In an exemplary embodiment, the alarm signal is at a low level, and the operation signal is at a high level.

[0013] In an exemplary embodiment, the first voltage threshold is set to be less than a first voltage of the power supply control device and greater than a second voltage of the power supply control device, wherein the first voltage is greater than the second voltage, the first voltage is the maximum voltage allowed by the power supply control device, and the second voltage is the voltage when the power supply control device operates normally.

[0014] In an exemplary embodiment, the drain switch module is configured to disconnect the drain switch module when receiving the alarm signal of a high level; and to turn on the drain switch module when receiving the operation signal of a low level; wherein, when the drain switch module is turned on, the drain switch module is configured to allow the output of the drain voltage of the drain of the field effect transistor, and when the drain switch module is disconnected, the drain switch module is configured to not allow the output of the drain voltage of the drain of the field effect transistor.

[0015] In an embodiment of the present invention, the voltage of the gate of the field effect tube will dynamically change during the power-on and power-off process of the field effect tube. The voltage of the drain of the field effect tube must be loaded only after the voltage of the gate of the field effect tube is normal. The power supply control device can monitor in real time whether the voltage of the gate of the field effect tube is greater than the voltage threshold, and when it is detected that the voltage of the gate of the field effect tube is greater than the voltage threshold, the drain switch module is turned off in time, ensuring that the voltage of the drain of the field effect tube is loaded only when the voltage of the gate of the field effect is normal, solving the problem of high damage rate of the field effect tube in the related art and achieving the effect of reducing the damage rate of the field effect tube. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0017] Figure 1 Schematic diagram of a power supply control device of a field effect tube according to an embodiment of the present invention Figure 1 ;

[0018] Figure 2 Schematic diagram of a power supply control device of a field effect tube according to an embodiment of the present invention Figure 2 ;

[0019] Figure 3 is a schematic diagram of a change process of a gate voltage of a field effect transistor according to an optional embodiment of the present application;

[0020] Figure 4 Schematic diagram of a power supply control device of a field effect tube according to an embodiment of the present invention Figure 3 ;

[0021] Figure 5 Schematic diagram of a power supply control device of a field effect tube according to an embodiment of the present invention Figure 4 ;

[0022] Figure 6 Schematic diagram of a power supply control device of a field effect tube according to an embodiment of the present invention Figure 5 ;

[0023] Figure 7 It is a schematic diagram of a connection circuit between an optional power supply control device and a GAN power amplifier tube according to an embodiment of the present application. DETAILED DESCRIPTION

[0024] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0025] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0026] In this embodiment, a power supply control device for a field effect tube is provided. Figure 1 Schematic diagram of a power supply control device of a field effect tube according to an embodiment of the present invention Figure 1 ,like Figure 1 As shown, the input terminal 101-1 of the power supply control device 101 is connected to the gate 102-1 of the field effect tube 102, and the output terminal 101-2 of the power supply control device 101 is connected to the input terminal 103-1 of the drain switch module 103; the drain 102-2 of the field effect tube 102 is connected to the output terminal 103-2 of the drain switch module 103; wherein, the power supply control device 101 is used to generate and initiate an alarm signal to the drain switch module 103 when the gate voltage of the gate 102-1 of the field effect tube 102 is greater than or equal to the first voltage threshold, and to generate and initiate an operation signal to the drain switch module 103 when the gate voltage is less than the first voltage threshold; the drain switch module 103 is configured to be closed according to the alarm signal or opened according to the operation signal.

[0027] Through the embodiments of the present application, the voltage of the gate of the field effect tube will dynamically change during the power-on and power-off process of the field effect tube. The voltage of the drain of the field effect tube must be loaded only after the voltage of the gate of the field effect tube is normal. The power supply control device can monitor in real time whether the voltage of the gate of the field effect tube is greater than the voltage threshold, and when it is detected that the voltage of the gate of the field effect tube is greater than the voltage threshold, the drain switch module is turned off in time, ensuring that the voltage of the drain of the field effect tube is loaded only when the voltage of the gate of the field effect is normal, solving the problem of high damage rate of the field effect tube in the related art and achieving the effect of reducing the damage rate of the field effect tube.

[0028] Optionally, in the embodiment of the present application, the field effect tube may include, but is not limited to, a field effect tube that needs to load the voltage of the gate of the field effect tube normally, for example, N-channel MOSFET (N-channelMetal-Oxide-SemiconductorField-EffectTransistor), P-channel MOSFET (P-channelMOSFET), etc., or the field effect tube may include, but is not limited to, a field effect tube that needs to load the voltage of the gate of the field effect tube first, and then load the voltage of the drain of the field effect tube after the negative voltage of the gate is normal, etc., for example, it may include, but is not limited to, a GAN field effect transistor, etc., and the GAN field effect transistor is a field effect transistor based on gallium nitride and aluminum gallium nitride. Gallium nitride materials have good heat dissipation performance, high breakdown electric field, high saturation speed and other characteristics, so that the device is widely used in microwave and millimeter wave communications, radar and wireless communications.

[0029] In an exemplary embodiment, the power supply control device also includes: a first switching device, a first resistor, a second resistor and a power supply, the second resistor being connected to the gate of the field effect transistor as an input end of the power supply control device, the first resistor and the second resistor being connected, the emitter of the first switching device being connected between the first resistor and the second resistor, the base of the first switching device being grounded, the collector of the first switching device being connected to the power supply, and the first resistor being grounded; the first switching device being used to disconnect the collector and the emitter when the gate voltage is greater than or equal to the first voltage threshold, and to connect and maintain the collector and the emitter when the gate voltage is less than the first voltage threshold.

[0030] Figure 2 Schematic diagram of a power supply control device of a field effect tube according to an embodiment of the present invention Figure 2 ,like Figure 2As shown, the power supply control device further includes: a first switch device 201, a first resistor 202, a second resistor 203 and a power supply 204, the second resistor 203 is connected to the gate 102-1 of the field effect tube 102 as the input terminal 101-1 of the power supply control device 101, the first resistor 202 and the second resistor 203 are connected, the emitter 201-3 of the first switch device 201 is connected between the first resistor 202 and the second resistor 203, the base 201-1 of the first switch device 201 is grounded, the collector 201-2 of the first switch device 201 is connected to the power supply 204, and the first resistor 202 is grounded; the first switch device 201 is used to disconnect the collector 201-2 and the emitter 201-3 when the gate voltage is greater than or equal to the first voltage threshold, and connect and maintain the collector 201-2 and the emitter 201-3 when the gate voltage is less than the first voltage threshold.

[0031] In an exemplary embodiment, the power supply control device is used to determine the voltage of the emitter as a value obtained by performing a product operation on a target quotient value and the gate voltage during the power-on process of the field effect tube or during the power-off process of the field effect tube, wherein the target quotient value is equal to a value obtained by dividing a first resistance value by a target sum value, the first resistance value is the resistance value of the first resistor, the target sum value is equal to the sum of the first resistance value and a second resistance value, and the second resistance value is the resistance value of the second resistor; wherein, when the voltage of the emitter is greater than or equal to a second voltage threshold, the first switching device is set to be turned off, and when the voltage of the emitter is less than the second voltage threshold, the first switching device is set to be turned on.

[0032] Optionally, in this embodiment, the first resistance value and the second resistance value may include but are not limited to multiple combinations, and may be selected by but are not limited to the following formula (1):

[0033] R1 / (R1+R2)*V=-0.7V(1)

[0034] Among them, R1 is the first resistance value, R2 is the second resistance value, and V is the gate voltage of the field effect tube when it operates normally. For example, under normal loading, the gate voltage of the field effect tube can include but is not limited to -2V.

[0035] It should be noted that when determining R1 and R2, it is possible but not limited to first determining R1 and then determining R2 using the above formula (1), or first determining R2 and then determining R2 using the above formula (1), or determining R1 and R2 simultaneously when the above formula (1) is satisfied.

[0036] Optionally, in this embodiment, during the power-on and power-off process of the field effect tube, the gate voltage of the field effect tube changes dynamically. Figure 3 is a schematic diagram of a change process of a gate voltage of a field effect transistor according to an optional embodiment of the present application, such as Figure 3 As shown, during the power-on process of a device (e.g., a field effect transistor), the gate voltage (e.g., V3) of the field effect transistor starts to drop from 0V and approaches the threshold voltage (e.g., -2V), and then continues to drop to the normal operating voltage (e.g., -2.5V), wherein the maximum tolerable voltage of the field effect transistor is less than 0V and greater than the threshold voltage of the field effect transistor (e.g., -2V).

[0037] When a device (e.g., a field effect transistor) is powered off, the gate voltage (e.g., V3) of the field effect transistor starts to rise from a normal operating voltage (e.g., -2.5V) and approaches a threshold voltage (e.g., -2V), and the gate voltage (e.g., V3) of the field effect transistor rises from the threshold voltage (e.g., -2V) and reaches 0V.

[0038] In an exemplary embodiment, the power supply control device also includes a second switching device and a third resistor, the gate of the second switching device is connected to the third resistor and then connected to the power supply, the collector of the first switching device is connected to the gate of the second switching device, the drain of the second switching device is connected to the input end of the drain switch module as the output end of the power supply control device, and the source of the second switching device is connected to the power supply; the second switching device is used to disconnect the source and the drain when the gate voltage is greater than or equal to the first voltage threshold, and connect and maintain the source and the drain when the gate voltage is less than the first voltage threshold.

[0039] Figure 4 Schematic diagram of a power supply control device of a field effect tube according to an embodiment of the present invention Figure 3 ,like Figure 4As shown, the power supply control device also includes: a second switch device 402 and a third resistor 401, wherein a gate 402-1 of the second switch device 402 is connected to the third resistor 401 and then connected to the power supply 204, a collector 201-2 of the first switch device 201 is connected to the gate 402-1 of the second switch device 402, a drain 402-3 of the second switch device 402 is connected to the input end 103-1 of the drain switch module 103 as the output end 101-2 of the power supply control device 101, and a source 402-2 of the second switch device 402 is connected to the power supply 204; the second switch device 402 is used to disconnect the source 402-2 and the drain 402-3 when the gate voltage is greater than or equal to the first voltage threshold, and to connect and maintain the source 402-2 and the drain 402-3 when the gate voltage is less than the first voltage threshold.

[0040] In an exemplary embodiment, the second switching device is used to, during the power-on process of the field effect tube or during the power-off process of the field effect tube, when the gate voltage is greater than or equal to the first voltage threshold and the first switching device is set to be turned off, the voltage of the gate of the second switching device is equal to the source voltage of the source, disconnecting the source and the drain; when the gate voltage is less than the first voltage threshold and the first switching device is set to be turned on, the voltage of the gate of the second switching device is less than the source voltage, connecting and maintaining the source and the drain.

[0041] Optionally, in this embodiment, when the first switching device is turned on, the voltage of the gate of the second switching device is approximately equal to the voltage of the emitter of the first switching device.

[0042] Optionally, in this embodiment, during the power-on process of the field effect tube, for example, during the process of the gate voltage of the field effect tube dropping from 0V to the voltage threshold (or called the threshold voltage, for example, -2V), the first switch device and the second switch device remain turned off, and the drain switch module also remains turned off; during the process of the gate voltage of the field effect tube continuing to drop from the voltage threshold (or called the threshold voltage, for example, -2V) to less than the normal working voltage (for example, -2.5V) and greater than the normal working voltage, the first switch device and the second switch device remain turned on, and the drain switch module also remains turned on. Although the gate voltage of the field effect tube is greater than the normal working voltage, the field effect tube is in an abnormal working state at this time, but it will not cause damage to the device; when the gate voltage of the field effect tube drops to the normal working voltage (for example, -2.5V), the first switch device and the second switch device remain turned on, the drain switch module also remains turned on, and the field effect tube is in a normal working state.

[0043] Optionally, in the present embodiment, during the power-off process of the field effect tube, for example, during the process in which the voltage of the gate of the field effect tube rises from the normal operating voltage (for example, -2.5V) and approaches the voltage threshold (or referred to as the threshold voltage, for example, -2V), the first switch device and the second switch device remain turned on, and the drain switch module also remains turned on. In this case, although the field effect tube is in an abnormal working state, it will not cause damage to the field effect tube; during the process in which the voltage of the gate of the field effect tube continues to rise from the voltage threshold (or referred to as the threshold voltage, for example, -2V) to 0V, the first switch device and the second switch device remain turned off, the drain switch module also remains turned off, there is no voltage on the drain of the field effect tube, and the field effect tube will not be damaged.

[0044] In an exemplary embodiment, the power supply control device further includes a fourth resistor, and the drain of the second switch device is connected to the fourth resistor and then grounded; the fourth resistor is used to set the alarm signal to a low level when the second switch device is disconnected.

[0045] Figure 5 Schematic diagram of a power supply control device of a field effect tube according to an embodiment of the present invention Figure 4 ,like Figure 5 As shown, the power supply control device also includes: a fourth resistor 601, the drain 402-3 of the second switch device 402 is connected to the fourth resistor 601 and then grounded; the fourth resistor 601 is used to set the alarm signal to a low level when the second switch device 402 is disconnected.

[0046] In order to better understand the structure and working process of the power supply control device in the embodiment of the present application, the structure and working process of the power supply control device in the embodiment of the present application are explained and illustrated in combination with optional embodiments below, which can be applicable to but not limited to the embodiment of the present application.

[0047] Figure 6 Schematic diagram of a power supply control device of a field effect tube according to an embodiment of the present invention Figure 5 ,like Figure 6 As shown, the power supply control device may be but is not limited to being configured with a voltage divider and current limiting resistor R1 (equivalent to the first resistor), a voltage divider and current limiting resistor R2 (equivalent to the second resistor), Q1 (equivalent to the first switching device), a voltage divider and current limiting resistor R3 (equivalent to the third resistor), Q2 (equivalent to the second switching device), a voltage divider and current limiting resistor R4 (equivalent to the fourth resistor) and a power supply voltage VCC (equivalent to the power supply).

[0048] R2 is connected to the gate of the field effect tube as the input terminal of the power supply control device, R1 and R2 are connected, the emitter of Q1 is connected between R1 and R2, the base of Q1 is grounded, the collector of Q1 is connected to VCC, and R1 is grounded.

[0049] The gate of Q2 is connected to R3 and then to the power supply, the collector of Q1 is connected to the gate of Q2, the drain of Q2 is connected to the input of the drain switch module as the output of the power supply control device, the source of Q2 is connected to VCC, and the drain of Q2 is connected to R4 and then to ground.

[0050] The transistor Q1 may include but is not limited to an NPN transistor, and its main function is to turn on the transistor Q1 when Vbe>0.7V and to turn off the transistor Q1 when Vbe<0.7V.

[0051] The MOS tube Q2 may include, but is not limited to, a P-channel MOS tube, and its main function is to turn on the MOS tube when the G-pole voltage is less than a certain value of the S-pole voltage, otherwise the MOS tube is turned off.

[0052] The main function of R1 and R2 is to divide the gate voltage V3, and the value is mainly to ensure that when V3 is equal to the threshold voltage of U5, the voltage of V8 is -0.7V. The value can be, but is not limited to, based on R1 / (R1+R2)*V3=-0.7V.

[0053] The main function of R3 is to pull up the V9 voltage when Q1 is turned off and to limit the current of VCC when Q1 is turned on.

[0054] The main function of R4 is to pull down the third-level alarm signal V7 to ensure that V7 is in a low-frequency state when Q2 is turned off.

[0055] The workflow of the circuit can include but is not limited to the following:

[0056] It can be but not limited to taking the normal operating voltage of -2.5V, the maximum tolerable voltage of -1.5V, and the threshold voltage of the gate alarm module U5 as an example. The values ​​of R1 and R2 can be R1=7KΩ and R2=13KΩ respectively according to R1 / (R1+R2)*V3=-0.7V.

[0057] During the power-on process of a device (e.g., a GAN field effect transistor), the following may be included but are not limited to:

[0058] (1) The voltage of V3 (equivalent to the gate voltage of the GAN power amplifier tube) starts to drop from 0V and approaches the threshold voltage (equivalent to the first voltage threshold, for example, -2V), and the voltage of VCC rises from 0V to the normal working voltage; at this stage, since the voltage V8 of V3 after passing through R1 and R2 is greater than -0.7V, Q1 is in the off state, and the G pole voltage V9 of Q2 is pulled up by VCC through R3. The G pole voltage of Q2 is the same as the S pole voltage VCC, and Q2 is also in the off state. Then, the gate alarm signal V7 is low, U4 is turned off, and there is no voltage at the drain of the GAN power amplifier tube, so the device will not be damaged.

[0059] (2) When the voltage of V3 is less than the threshold voltage of -2V, the voltage of V8 is less than -0.7V, Q1 is turned on, and its C pole and E pole are connected. The voltage V9 of the G pole of Q2 is pulled down (close to the value of V8), and the value of V8 is less than the voltage of the S pole. Q2 is also turned on, and the gate alarm signal V7 value = VCC (the alarm signal is in a normal state). U4 is turned on, and the drain of the GAN power amplifier tube is powered on. At this time, the gate voltage of the power amplifier tube is greater than the normal working value. The power amplifier tube is in an abnormal working state, but it will not cause damage to the device;

[0060] It should be noted that V8 can be calculated according to, but not limited to, formula (2):

[0061] V8=R1 / (R1+R2)*V3(2)

[0062] Wherein, R1 is the first resistance value, R2 is the second resistance value, and V3 is the gate voltage of the gate of the field effect tube.

[0063] It should be noted that during the power-on and power-off process, the gate voltage of the gate of the field effect tube will change dynamically, that is, V8 also changes dynamically.

[0064] (3) When the V3 value continues to drop to the normal working voltage of -2.5V, Q1 and Q2 remain turned on, but at this time the gate voltage of the power amplifier tube is equal to the normal working value, and the power amplifier tube is in a normal working state.

[0065] The power-off process of the device may include but is not limited to the following:

[0066] (1) The voltage of V3 starts to rise from the normal working voltage of -2.5V and approaches the threshold voltage of -2V; the voltage of V8 is less than -0.7V, Q1 is turned on, and its C pole and E pole are connected. The voltage V9 of the G pole of Q2 is pulled down (close to the value of V8), and the value of V8 is less than the voltage of the S pole. Q2 is also turned on, and the gate alarm signal V7 value = VCC (the alarm signal is in a normal state). U4 is turned on, and the drain of the GAN power amplifier tube is powered on. At this time, the gate voltage of the power amplifier tube is greater than the normal working value. The power amplifier tube is in an abnormal working state, but it will not cause damage to the device;

[0067] (2) The voltage of V3 rises from -2V and reaches 0V. At this stage, since the voltage V8 of V3 after passing through R1 and R2 is greater than -0.7V, Q1 is in the off state, and the G pole voltage V9 of Q2 is pulled up by VCC through R3, which is the same as the S pole voltage VCC. Q2 is also in the off state, then the gate alarm signal V7 is low level, U4 is turned off, and there is no voltage on the drain of the GAN power amplifier tube, so the device will not be damaged.

[0068] In an exemplary embodiment, the power supply control device is used to generate and initiate the alarm signal to the drain switch module when the gate voltage of the gate of the field effect transistor is greater than or equal to the first voltage threshold and the first switch device and the second switch device are both turned off; and to generate and initiate the operation signal to the drain switch module when the gate voltage of the gate of the field effect transistor is less than the first voltage threshold and the first switch device and the second switch device are both turned on.

[0069] In an exemplary embodiment, the alarm signal is at a low level, and the operation signal is at a high level.

[0070] Optionally, in this embodiment, the low level and the high level may include but are not limited to logic levels. As an optional example, the low level may include but are not limited to a voltage less than a specific voltage value, and the high level may include but are not limited to a voltage greater than a specific voltage value. The high level may be identified by 1 and the low level may be identified by 0, but are not limited to.

[0071] In an exemplary embodiment, the first voltage threshold is set to be less than a first voltage of the power supply control device and greater than a second voltage of the power supply control device, wherein the first voltage is greater than the second voltage, the first voltage is the maximum voltage allowed by the power supply control device, and the second voltage is the voltage when the power supply control device operates normally.

[0072] Optionally, in this embodiment, the first voltage threshold may be set in the following manner but is not limited to: an average operation is performed on the first voltage and the second voltage to obtain the first voltage threshold.

[0073] Optionally, in this embodiment, the second voltage may be, but is not limited to, smaller than the first voltage.

[0074] In an exemplary embodiment, the drain switch module is configured to disconnect the drain switch module when receiving the alarm signal of a high level; and to turn on the drain switch module when receiving the operation signal of a low level; wherein, when the drain switch module is turned on, the drain switch module is configured to allow the output of the drain voltage of the drain of the field effect transistor, and when the drain switch module is disconnected, the drain switch module is configured to not allow the output of the drain voltage of the drain of the field effect transistor.

[0075] In order to better understand the application scenarios and workflows of the power supply control device in the embodiments of the present application, the application scenarios and workflows of the power supply control device in the embodiments of the present application are explained and illustrated below in combination with optional embodiments, which can be applicable to but not limited to the embodiments of the present application.

[0076] The explanation and description may be made by taking, but not limited to, taking a power supply control device including a gate alarm module and a field effect tube including a GAN power amplifier tube as an example, Figure 7 is a schematic diagram of a connection circuit between an optional power supply control device and a GAN power amplifier tube according to an embodiment of the present application, such as Figure 7 As shown, the connection circuit may include but is not limited to a negative pressure generating module U2, a gate processing module U3, a gate alarm module U5, a GAN power amplifier tube U1, and a drain switch module U4.

[0077] The output end of the negative pressure generating module U2 is connected to the input end of the gate processing module U3, the output end of the gate processing module U3 is connected to the gate of the GAN power amplifier tube U1, the gate of the GAN power amplifier tube U1 is also connected to the input end of the gate alarm module U5, the output end of the gate alarm module U5 is connected to the input end of the drain switch module U4, and the output end of the drain switch module U4 is connected to the drain of the GAN power amplifier tube U1.

[0078] The negative voltage generating module U2 is used to generate a negative voltage V1, which can be but is not limited to being used as an input of the gate processing module U3. The gate processing module U3 outputs a gate negative voltage V3 according to the negative voltage V1. The gate alarm module U5 can be but is not limited to outputting a gate alarm signal V7 to the drain switch module U4. When the voltage of the gate of the GAN power amplifier tube is normally loaded, the drain switch module U4 outputs a drain voltage V4 of the drain of the GAN power amplifier tube according to the input drain positive voltage V5. The gate alarm module U5 can be but is not limited to setting a threshold voltage (equivalent to the first voltage threshold) inside. Its main function is that when the value of V3 (equivalent to the voltage of the gate of the GAN power amplifier tube) is within the threshold voltage range (equivalent to the first voltage threshold), the gate alarm signal V7 output by the gate alarm module U5 is normal, and the drain switch module U4 is normally opened; when the V3 value exceeds the threshold voltage range, the gate alarm signal V7 output by the gate alarm module U5 is abnormal, and the drain switch module U4 is turned off; the threshold voltage can be but is not limited to being determined by the normal operating voltage and the maximum tolerable voltage of the GAN device, for example, set in the middle of the two.

[0079] The working process of the circuit in the embodiment of the present application may include but is not limited to the following contents: first, the normal operating voltage and the maximum tolerable voltage of the GAN power amplifier tube can be known from the device manual of the GAN power amplifier tube; the normal operating voltage is -2.5V, the maximum tolerable voltage is -1.5V, and the gate alarm module U5 threshold voltage is -2V as an example for explanation and description.

[0080] During the device power-on process, the following may be performed, but are not limited to:

[0081] (1) The voltage V3 (equivalent to the gate voltage of the GAN power amplifier tube) starts to drop from 0V and approaches the threshold voltage (equivalent to the first voltage threshold, for example, -2V); at this stage, since V3 is greater than the threshold voltage (for example, -2V), the gate alarm signal V7 output by the gate alarm module U5 is abnormal, the drain switch module U4 is turned off, and there is no voltage on the drain of the GAN power amplifier tube, and the device will not be damaged;

[0082] (2) When the voltage of V3 is less than -2V, the gate alarm signal V7 output by the gate alarm module U5 is a normal value, the drain switch module U4 is turned on, and the drain of the GAN power amplifier tube is powered on. At this time, the gate voltage of the power amplifier tube is greater than the normal working value, and the power amplifier tube is in an abnormal working state, but it will not cause damage to the device;

[0083] (3) When the V3 value continues to drop to a normal working voltage (for example, -2.5 V), the gate alarm signal V7 output by the gate alarm module U5 is a normal value, the drain switch module U4 is turned on, and the drain of the GAN power amplifier tube is powered on. At this time, the gate voltage of the power amplifier tube is equal to the normal working value, and the power amplifier tube is in a normal working state.

[0084] During the device power-off process, the following may be performed, but are not limited to:

[0085] (1) The voltage V3 starts to rise from the normal working voltage (for example, -2.5V) and approaches the threshold voltage -2V; the gate alarm signal V7 output by the gate alarm module U5 is a normal value, the drain switch module U4 is turned on, and the drain of the GAN power amplifier tube is powered on. At this time, the gate voltage of the power amplifier tube is greater than the normal working value, and the power amplifier tube is in an abnormal working state, but it will not cause damage to the device;

[0086] (2) The voltage of V3 starts to rise from -2.0V and reaches 0V. At this stage, since V3 is greater than the threshold voltage of -2V, the gate alarm signal V7 output by the gate alarm module U5 is abnormal, the drain switch module U4 is turned off, and there is no voltage on the drain of the GAN power amplifier tube, so the device will not be damaged.

[0087] It should be noted that when the negative voltage generating module U2 works abnormally, the output is overloaded, or the output is open or short-circuited, causing the V3 voltage to rise abnormally, the gate alarm module U5 can also determine whether to output an abnormal gate alarm signal V7 through the threshold voltage.

[0088] Compared with the related art, the negative pressure generating module U2 compares whether the negative pressure V1 output by it is normal, and outputs an alarm signal to the drain switch module when the negative pressure V1 is abnormal. In this way, on the one hand, the output load of the negative pressure generating module exceeds the range or is short-circuited, and the negative pressure alarm signal has a certain delay, which may cause damage to the GAN power amplifier tube; on the other hand, when the gate processing module U3 fails (for example, open circuit) and V3 cannot be correctly loaded into the GAN power amplifier, the GAN power amplifier tube will be damaged; and through the embodiment of the present application, when the gate processing module U3 fails (open circuit) and V3 cannot be correctly loaded into the GAN power amplifier tube, the power supply control device can promptly turn off the drain switch module to avoid damage to the GAN power amplifier tube.

[0089] It should be noted that in the embodiments of the present application, only the example in which Q1 includes an NPN transistor and Q2 includes a P-channel MOS tube is used for explanation. In fact, in actual applications, the first switching device and the second switching device can be selected according to actual application requirements, and the present application does not impose any restrictions on this.

[0090] Optionally, the specific examples in this embodiment may refer to the examples described in the above embodiments and optional implementation modes, and this embodiment will not be described in detail here.

[0091] Obviously, those skilled in the art should understand that the above modules or steps of the present invention can be implemented by a general computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, and optionally, they can be implemented by a program code executable by a computing device, so that they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be executed in a different order than here, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation. Thus, the present invention is not limited to any specific combination of hardware and software.

[0092] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A power supply control device for a field effect tube, characterized in that: include: The input end of the power supply control device is connected to the gate of the field effect tube, and the output end of the power supply control device is connected to the input end of the drain switch module; The drain of the field effect tube is connected to the output end of the drain switch module; The power supply control device is used to generate and initiate an alarm signal to the drain switch module when the gate voltage of the gate of the field effect tube is greater than or equal to the first voltage threshold, and to generate and initiate an operation signal to the drain switch module when the gate voltage is less than the first voltage threshold; The drain switch module is configured to be turned off according to the alarm signal or turned on according to the operation signal.

2. The power supply control device according to claim 1, characterized in that: include: A first switch device, a first resistor, a second resistor and a power supply, wherein the second resistor is connected to the gate of the field effect transistor as an input end of the power supply control device, the first resistor is connected to the second resistor, the emitter of the first switch device is connected between the first resistor and the second resistor, the base of the first switch device is grounded, the collector of the first switch device is connected to the power supply, and the first resistor is grounded; The first switching device is used to disconnect the collector and the emitter when the gate voltage is greater than or equal to the first voltage threshold, and to connect and maintain the collector and the emitter when the gate voltage is less than the first voltage threshold.

3. The power supply control device according to claim 2, characterized in that: include: The power supply control device is used to determine the voltage of the emitter as a value obtained by performing a product operation on a target quotient value and the gate voltage during a power-on process of the field effect tube or during a power-off process of the field effect tube, wherein the target quotient value is equal to a value obtained by dividing a first resistance value by a target sum value, the first resistance value is the resistance value of the first resistor, the target sum value is equal to the sum of the first resistance value and the second resistance value, and the second resistance value is the resistance value of the second resistor; Wherein, when the voltage of the emitter is greater than or equal to a second voltage threshold, the first switch device is set to be turned off, and when the voltage of the emitter is less than the second voltage threshold, the first switch device is set to be turned on.

4. The power supply control device according to claim 1, characterized in that: include: The power supply control device includes a second switch device and a third resistor, the gate of the second switch device is connected to the third resistor and then connected to the power supply, the collector of the first switch device is connected to the gate of the second switch device, the drain of the second switch device is connected to the input end of the drain switch module as the output end of the power supply control device, and the source of the second switch device is connected to the power supply; The second switching device is used to disconnect the source and the drain when the gate voltage is greater than or equal to the first voltage threshold, and to connect and maintain the source and the drain when the gate voltage is less than the first voltage threshold.

5. The power supply control device according to claim 4, characterized in that: include: The second switching device is used for, during the power-on process of the field effect tube or during the power-off process of the field effect tube, when the gate voltage is greater than or equal to the first voltage threshold and the first switching device is set to be turned off, the gate voltage of the second switching device is equal to the source voltage of the source, disconnecting the source and the drain; when the gate voltage is less than the first voltage threshold and the first switching device is set to be turned on, the gate voltage of the second switching device is less than the source voltage, connecting and maintaining the source and the drain.

6. The power supply control device according to claim 5, characterized in that: include: a fourth resistor, wherein the drain of the second switch device is connected to the fourth resistor and then grounded; The fourth resistor is used to set the alarm signal to a low level when the second switch device is disconnected.

7. The power supply control device according to claim 1, characterized in that: include: The power supply control device is used to generate and initiate the alarm signal to the drain switch module when the gate voltage of the gate of the field effect tube is greater than or equal to the first voltage threshold and the first switch device and the second switch device are both turned off; and to generate and initiate the operation signal to the drain switch module when the gate voltage of the gate of the field effect tube is less than the first voltage threshold and the first switch device and the second switch device are both turned on.

8. The power supply control device according to claim 7, characterized in that: include: The alarm signal is at a low level, and the operation signal is at a high level.

9. The power supply control device according to claim 1, characterized in that: include: The first voltage threshold is set to be less than a first voltage of the power supply control device and greater than a second voltage of the power supply control device, wherein the first voltage is greater than the second voltage, the first voltage is the maximum voltage allowed by the power supply control device, and the second voltage is the voltage when the power supply control device operates normally.

10. The power supply control device according to claim 1, characterized in that: The drain switch module is configured to disconnect the drain switch module when receiving the alarm signal of a high level; and to turn on the drain switch module when receiving the operation signal of a low level; Wherein, when the drain switch module is turned on, the drain switch module is configured to allow the output of the drain voltage of the drain of the field effect transistor, and when the drain switch module is turned off, the drain switch module is configured to not allow the output of the drain voltage of the drain of the field effect transistor.

Images