PECVD (Plasma Enhanced Chemical Vapor Deposition) regional double-sided coating carrier plate and

Abstract

The invention discloses a PECVD (Plasma Enhanced Chemical Vapor Deposition) regional double-sided coating carrier plate and a using method, the PECVD regional double-sided coating carrier plate comprises at least one placing unit, the placing unit is of a tungsten filament crisscross structure, the tungsten filament crisscross structure comprises crisscross tungsten filaments which are embedded and tensioned in an outer frame and are arranged in an array, the tungsten filaments are used for placing a bearing part, and the tungsten filaments are arranged in a crisscross manner; the tungsten filament is fastened to the outer frame through a tensioning device, and a hole type carrier plate recognizer is further arranged on the edge of the containing unit. The invention has the following advantages: the cross design can effectively prevent the fringe effect generated by double-sided coating, solves the problem of chromatic aberration caused by the fringe effect, and improves the production yield and the cell conversion efficiency; accurate positioning is facilitated, automatic and accurate wafer placement is achieved, and the overall reliability of the sub-carrier plate is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of HJT batteries, and in particular to a PECVD zoned double-sided coating carrier and a use method thereof. Background Art

[0002] With the development of science and technology, energy depletion and other issues have promoted the development of solar cell technology, especially the development and application of high-efficiency cells have received more and more attention. High-efficiency cells usually use silicon-based heterojunction solar cells (HJT cells) passivated with intrinsic amorphous silicon layer a-Si:H(i). Silicon-based heterojunction solar cells not only have the characteristics of high performance conversion efficiency and open circuit voltage, but also have application advantages such as low temperature coefficient, no light-induced degradation (LID), no electrical degradation (PID), and low preparation process temperature. For HJT cells, amorphous silicon plays a key role in passivation and forming pn junctions, which plays a decisive role in the conversion efficiency of HJT cells. Therefore, the preparation of amorphous silicon films with excellent performance is the key technology to obtain high-efficiency HJT cells.

[0003] The amorphous silicon thin film of HJT battery in the prior art is mainly made by PECVD equipment. PECVD (Plasma Enhanced Chemical Vapor Deposition) refers to plasma enhanced chemical vapor deposition. Since the performance of heterojunction battery has extremely high requirements on the cleanliness and friction of silicon wafer surface, the PECVD carrier has a vital impact on heterojunction battery. The traditional PECVD carrier is a flat plate structure, and groove or point-type limiters are used inside the frame around the flat plate carrier. The contact area between the silicon wafer and the carrier is large, which is easy to damage the surface of the silicon wafer by friction, and the quality is unstable, affecting the battery conversion efficiency. Specifically, there are the following disadvantages: 1) The structural design of PECVD double-sided coating is unreasonable, the overall wafer layout is not compact, the utilization rate of the effective wafer area is low, and the production capacity is low; 2) When performing double-sided coating, the step-type design adopted in the prior art has sputtering dark Area, easy to form virtual coating phenomenon; 3) The overlap distance design for PECVD double-sided coating is not the optimal value. If the overlap distance is too large, it will directly affect the battery efficiency. If the overlap distance is too small, it will affect the production yield of broken pieces, fallen pieces, and collapsed edges, and it is easy to cause edge plating problems, which directly affects the battery efficiency; 4) The 304 stainless steel material used for the carrier board for PECVD double-sided coating is easy to be etched after a period of corrosion maintenance, and the material is easy to be brittle, resulting in a short service life of the carrier board; 5) The attached identification and transmission ID of the carrier board for PECVD double-sided coating is through laser coding, RFID recognition, and ID transmission, but the QR code cannot be recognized after coating, resulting in ID transmission failure. Summary of the invention

[0004] The present invention proposes a PECVD zoned double-sided coating carrier and a use method thereof, which solve the technical problems existing in the above-mentioned prior art.

[0005] According to one aspect of the present invention, there is provided a PECVD zoned double-sided coated carrier, characterized in that it comprises: at least one placement unit, the placement unit is a tungsten wire cross structure, the tungsten wire cross structure comprises tungsten wires embedded and stretched between outer frames to form a cross-shaped array arrangement, which is used to place a carrier, the tungsten wires are fastened to the outer frame by a tensioning device, and a hole-type carrier identifier is also provided on the edge of the placement unit.

[0006] Furthermore, the diameter of the tungsten wire is 0.2 mm.

[0007] Furthermore, the tensioning device positions the tungsten wire through a positioning hole provided on the outer frame.

[0008] Furthermore, the carrier board of the tungsten filament structure is divided into four areas.

[0009] Furthermore, the hole-type carrier identifier includes: 12 circular holes, the first two bits of the forward direction are identification codes, and the 3rd and 4th bits of the forward direction are anti-mistake bits, which correspond to 4 bits of binary respectively.

[0010] Furthermore, the outer frame is made of 316L stainless steel.

[0011] According to another aspect of the present invention, there is also provided a method for using a PECVD region-divided double-sided coating carrier, characterized in that it comprises:

[0012] Provide at least one placement unit, the placement unit is a tungsten wire cross structure, the tungsten wire cross structure includes tungsten wires that are inserted and stretched between the outer frames to form a cross-shaped array, used to place the carrier, the tungsten wires are fastened to the outer frame through a tensioning device, and a hole-type carrier identifier is also provided on the edge of the placement unit;

[0013] The carriers are placed on the upper and lower sides of the placement unit, and the upper and lower coatings are performed simultaneously.

[0014] It can be seen from the technical solution provided by the present invention that, by adopting the present invention, the battery cell is placed in a carrier plate with a tungsten wire structure. Since the crossing mode of the tungsten wire is a cross, no displacement will occur during the transmission of the carrier plate; the cross design can effectively prevent the edge effect caused by double-sided coating and solve the color difference problem caused by the edge effect; the optimal overlap distance design (the diameter of the tungsten wire is 0.2 mm) controls the edge support surface to the most ideal width to meet the placement requirements of the battery cell, effectively solves the problems of falling and breaking pieces in production, improves the production yield, solves the problem of edge plating, and improves the battery conversion efficiency; uses one circular hole for positioning and multiple elliptical holes for fixing, which is conducive to precise positioning and realizes automatic and precise placement of the cell; uses a more corrosion-resistant 316L stainless steel material to solve the problem of the sub-carrier plate being easily corroded during maintenance in the prior art, improves the overall reliability of the sub-carrier plate, and effectively reduces the defects caused by carrier plate problems during the PECVD production process. The hole-type binary code is used to adapt to more complex process environments. There are 12 circular holes. The first two bits in the forward direction are identification codes, which can identify the arrival of the carrier and start reading the ID. The 3rd and 4th bits in the forward direction are anti-dummy bits to prevent the hole plugging piece from falling abnormally. They correspond to 4 bits of binary, with odd numbers and even numbers. It is divided into four areas, 1, 2, 3, and 4 areas are relatively independent process chambers corresponding to electrodes and spray cathodes, which can achieve simultaneous coating of a larger area.

[0015] The above description is only an overview of the technology of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0017] Figure 1 It is a schematic structural diagram of the PECVD zoned double-sided coating carrier of the present invention.

[0018] Reference numerals

[0019] 11-outer frame 12-carrier with tungsten wire structure 13-tungsten wire 14-cell 15-hole carrier identifier 16-positioning hole DETAILED DESCRIPTION

[0020] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present invention and to enable the scope of the present invention to be fully communicated to those skilled in the art.

[0021] The following is a detailed description of a PECVD double-sided coating carrier provided by the present invention. The contents not described in detail in the embodiments of the present invention belong to the prior art known to professionals in the field. If no specific conditions are specified in the embodiments of the present invention, the conventional conditions in the field or the conditions recommended by the manufacturer shall be followed.

[0022] See also Figure 1 A PECVD regional double-sided coating carrier of the present invention comprises: at least one placement unit, the placement unit is a tungsten wire cross structure, the tungsten wire cross structure comprises tungsten wires 13 embedded and stretched between outer frames 11 to form a cross-shaped array arrangement, which are used to place the carrier, the tungsten wires 13 are fastened to the outer frame 11 by a tensioning device, and a hole-type carrier identifier 15 is also arranged on the edge of the placement unit.

[0023] Specifically, the diameter of the tungsten wire 13 is 0.2 mm.

[0024] Specifically, the tensioning device positions the tungsten wire 13 via a positioning hole 16 provided on the outer frame 11 , and the positioning hole is a circular hole and / or an elliptical hole.

[0025] Specifically, the carrier board 12 of the tungsten wire structure is divided into four areas.

[0026] Specifically, each of the regions includes a relatively independent electrode and a process chamber corresponding to the spray cathode.

[0027] Specifically, the outer frame 11 is made of 316L stainless steel.

[0028] The present invention adopts a carrier plate with a tungsten wire structure, so that the carrier plate is not only suitable for single-upper-side coating or single-lower-side coating, but also can be used for upper and lower coating at the same time without the need for flipping and switching.

[0029] Compared with the graphite solid structure, the tungsten wire structure of the present invention has low maintenance cost. Daily maintenance only requires replacing or adjusting the tungsten wire. The installation is simple and convenient, and there is no installation accuracy requirement for the graphite carrier plate.

[0030] The carrier of the present invention is divided into four areas, which can meet the strength requirements of large-size carriers, and cooperate with the cavity to achieve independent coating of the four blocks, improve the uniformity of the coating, and achieve simultaneous coating of a larger area.

[0031] The tungsten wire structure carrier of the present invention reduces the vibration of the silicon chip during the movement.

[0032] The present invention is provided with a hole-type carrier identifier, which adopts a hole-type binary code and is adapted to a more complex process environment. The 12-bit circular holes, the first two bits in the forward direction are identification codes, which can identify the arrival of the carrier and start reading the ID. The 3rd and 4th bits in the forward direction are anti-dizzy bits to prevent the hole plugging piece from falling abnormally, corresponding to 4 bits of binary respectively, with odd numbers having and even numbers not having.

[0033] Specifically, four adjacent cross-shaped tungsten wires form a square sub-unit, and the size of the carrier carried by the opening wall of the sub-unit is slightly larger, so as to place more carriers on the tungsten wire carrier plate, thereby improving production efficiency.

[0034] Specifically, the four top corners of the subunit are also designed to be chamfered to assist the adaptability of the supporting component in the placement unit.

[0035] Specifically, the chamfer may be configured as a square chamfer or an arc chamfer, as long as the carrier sheet can be smoothly dropped into or moved out of the sub-unit.

[0036] Specifically, the placement units are distributed in an array and can also be adaptively adjusted according to the size of the equipment cavity.

[0037] Specifically, the present invention also provides a chemical vapor deposition device, including multiple chambers, the above-mentioned PECVD regional double-sided coating carrier is transmitted in the chamber, and the multiple chambers are separated by vacuum gate valves.

[0038] It includes: at least one placement unit, the placement unit is a tungsten wire cross structure, the tungsten wire cross structure includes tungsten wires 13 embedded and stretched between the outer frames 11 to form a cross-shaped array arrangement, which is used to place the carrier, and the tungsten wires 13 are fastened to the outer frame 11 through a tensioning device. A hole-type carrier identifier 15 is also provided on the edge of the placement unit.

[0039] Specifically, the diameter of the tungsten wire 13 is 0.2 mm.

[0040] Specifically, the tensioning device positions the tungsten wire 13 via a positioning hole 16 provided on the outer frame 11 , and the positioning hole is a circular hole and / or an elliptical hole.

[0041] Specifically, the carrier board 12 of the tungsten wire structure is divided into four areas.

[0042] Specifically, each of the regions includes a relatively independent electrode and a process chamber corresponding to the spray cathode.

[0043] Specifically, the outer frame 11 is made of 316L stainless steel.

[0044] The present invention adopts a carrier plate with a tungsten wire structure, so that the carrier plate is not only suitable for single-upper-side coating or single-lower-side coating, but also can be used for upper and lower coating at the same time without the need for flipping and switching.

[0045] Compared with the graphite solid structure, the tungsten wire structure of the present invention has low maintenance cost. Daily maintenance only requires replacing or adjusting the tungsten wire. The installation is simple and convenient, and there is no installation accuracy requirement for the graphite carrier plate.

[0046] The carrier of the present invention is divided into four areas, which can meet the strength requirements of large-size carriers, and cooperate with the cavity to achieve independent coating of the four blocks, improve the uniformity of the coating, and achieve simultaneous coating of a larger area.

[0047] The tungsten wire structure carrier of the present invention reduces the vibration of the silicon chip during the movement.

[0048] The present invention is provided with a hole-type carrier identifier, which adopts a hole-type binary code and is adapted to a more complex process environment. The 12-bit circular holes, the first two bits in the forward direction are identification codes, which can identify the arrival of the carrier and start reading the ID. The 3rd and 4th bits in the forward direction are anti-dizzy bits to prevent the hole plugging piece from falling abnormally, corresponding to 4 bits of binary respectively, with odd numbers having and even numbers not having.

[0049] Specifically, four adjacent cross-shaped tungsten wires form a square sub-unit, and the size of the carrier carried by the opening wall of the sub-unit is slightly larger, so as to place more carriers on the tungsten wire carrier plate, thereby improving production efficiency.

[0050] Specifically, the four top corners of the subunit are also designed to be chamfered to assist the adaptability of the supporting component in the placement unit.

[0051] Specifically, the chamfer may be configured as a square chamfer or an arc chamfer, as long as the carrier sheet can be smoothly dropped into or moved out of the sub-unit.

[0052] Specifically, the placement units are distributed in an array and can also be adaptively adjusted according to the size of the equipment cavity.

[0053] The present invention also provides a method for using a PECVD zoned double-sided coating carrier, comprising:

[0054] Provide at least one placement unit, the placement unit is a tungsten wire cross structure, the tungsten wire cross structure includes tungsten wires that are inserted and stretched between the outer frames to form a cross-shaped array, used to place the carrier, the tungsten wires are fastened to the outer frame through a tensioning device, and a hole-type carrier identifier is also provided on the edge of the placement unit;

[0055] The carriers are placed on the upper and lower sides of the placement unit, and the upper and lower coatings are performed simultaneously.

[0056] The present invention adopts a carrier plate with a tungsten wire structure, so that the carrier plate is not only suitable for single-upper-side coating or single-lower-side coating, but also can be used for upper and lower coating at the same time without the need for flipping and switching.

[0057] Compared with the graphite solid structure, the tungsten wire structure of the present invention has low maintenance cost. Daily maintenance only requires replacing or adjusting the tungsten wire. The installation is simple and convenient, and there is no installation accuracy requirement for the graphite carrier plate.

[0058] The carrier of the present invention is divided into four areas, which can meet the strength requirements of large-size carriers, and cooperate with the cavity to achieve independent coating of the four blocks, improve the uniformity of the coating, and achieve simultaneous coating of a larger area.

[0059] The tungsten wire structure carrier of the present invention reduces the vibration of the silicon chip during the movement.

[0060] The present invention is provided with a hole-type carrier identifier, which adopts a hole-type binary code and is adapted to a more complex process environment. The 12-bit circular holes, the first two bits in the forward direction are identification codes, which can identify the arrival of the carrier and start reading the ID. The 3rd and 4th bits in the forward direction are anti-dizzy bits to prevent the hole plugging piece from falling abnormally, corresponding to 4 bits of binary respectively, with odd numbers having and even numbers not having.

[0061] Specifically, four adjacent cross-shaped tungsten wires form a square sub-unit, and the size of the carrier carried by the opening wall of the sub-unit is slightly larger, so as to place more carriers on the tungsten wire carrier plate, thereby improving production efficiency.

[0062] Specifically, the four top corners of the subunit are also designed to be chamfered to assist the adaptability of the supporting component in the placement unit.

[0063] Specifically, the chamfer may be configured as a square chamfer or an arc chamfer, as long as the carrier sheet can be smoothly dropped into or moved out of the sub-unit.

[0064] Specifically, the placement units are distributed in an array and can also be adaptively adjusted according to the size of the equipment cavity.

[0065] Specifically, the present invention also provides a chemical vapor deposition device, including multiple chambers, the above-mentioned PECVD regional double-sided coating carrier is transmitted in the chamber, and the multiple chambers are separated by vacuum gate valves.

[0066] It can be seen from the technical solution provided by the present invention that, by adopting the present invention, the battery cell is placed in a carrier plate with a tungsten wire structure. Since the crossing mode of the tungsten wire is a cross, no displacement will occur during the transmission of the carrier plate; the cross design can effectively prevent the edge effect caused by double-sided coating and solve the color difference problem caused by the edge effect; the optimal overlap distance design (the diameter of the tungsten wire is 0.2 mm) controls the edge support surface to the most ideal width to meet the placement requirements of the battery cell, effectively solves the problems of falling and breaking pieces in production, improves the production yield, solves the problem of edge plating, and improves the battery conversion efficiency; uses one circular hole for positioning and multiple elliptical holes for fixing, which is conducive to precise positioning and realizes automatic and precise placement of the cell; uses a more corrosion-resistant 316L stainless steel material to solve the problem of the sub-carrier plate being easily corroded during maintenance in the prior art, improves the overall reliability of the sub-carrier plate, and effectively reduces the defects caused by carrier plate problems during the PECVD production process. The hole-type binary code is used to adapt to more complex process environments. There are 12 circular holes. The first two bits in the forward direction are identification codes, which can identify the arrival of the carrier and start reading the ID. The 3rd and 4th bits in the forward direction are anti-dummy bits to prevent the hole plugging piece from falling abnormally. They correspond to 4 bits of binary, with odd numbers and even numbers. It is divided into four areas, 1, 2, 3, and 4 areas are relatively independent process chambers corresponding to electrodes and spray cathodes, which can achieve simultaneous coating of a larger area.

[0067] The carrier of the present invention is placed in a carrier plate of a tungsten wire structure. Since the crossing mode of the tungsten wire is a cross, no displacement will occur during the transmission of the carrier plate. The cross design can effectively prevent the edge effect caused by double-sided coating and solve the color difference problem caused by the edge effect. The optimal overlap distance design (the diameter of the tungsten wire is 0.2 mm) controls the edge support surface to the most ideal width to meet the placement requirements of the battery cells, effectively solve the problems of falling and breaking pieces in production, improve the production yield, solve the problem of edge plating, and improve the battery conversion efficiency. The method of fastening by using one circular hole for positioning and multiple elliptical holes for fixing is conducive to precise positioning and realizes automatic and precise placement of the pieces. The more corrosion-resistant 316L stainless steel material is selected to solve the problem that the sub-carrier plate of the prior art is easily corroded during maintenance, improve the overall reliability of the sub-carrier plate, and effectively reduce the defects caused by carrier plate problems during the PECVD production process. The hole-type binary code is used to adapt to more complex process environments. There are 12 circular holes. The first two bits in the forward direction are identification codes, which can identify the arrival of the carrier and start reading the ID. The 3rd and 4th bits in the forward direction are anti-dummy bits to prevent the hole plugging piece from falling abnormally. They correspond to 4 bits of binary, with odd numbers and even numbers. It is divided into four areas, 1, 2, 3, and 4 areas are relatively independent process chambers corresponding to electrodes and spray cathodes, which can achieve simultaneous coating of a larger area.

[0068] It should be clear that the present invention is not limited to the specific configuration and processing described above and shown in the figures. For the sake of simplicity, a detailed description of the known method is omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of the present invention is not limited to the specific steps described and shown, and those skilled in the art can make various changes, modifications and additions, or change the order between the steps after understanding the spirit of the present invention.

Claims

1. A PECVD double-sided coating carrier with different regions, characterized in that: include: At least one placement unit, the placement unit is a tungsten wire cross structure, the tungsten wire cross structure includes tungsten wires embedded and stretched between outer frames to form a cross-shaped array arrangement, which is used to place the carrier, and four adjacent cross-shaped tungsten wires form a square sub-unit, the tungsten wire is fastened to the outer frame by a tensioning device, and a hole-type carrier identifier is also arranged on the edge of the placement unit, and the tensioning device positions the tungsten wire through a positioning hole set on the outer frame.

2. The PECVD double-sided coating carrier according to claim 1, characterized in that: The diameter of the tungsten wire is 0.2 mm.

3. The PECVD double-sided coating carrier according to claim 1, characterized in that: The tensioning device comprises a circular hole or an elliptical hole arranged on the side of the outer frame.

4. The PECVD double-sided coating carrier according to claim 1, characterized in that: The placement unit is divided into four areas.

5. The PECVD double-sided coating carrier according to claim 1, characterized in that: The hole-type carrier plate identifier comprises: 12 circular holes, the first two bits of the forward direction are identification codes, and the 3rd and 4th bits of the forward direction are anti-mistake bits, which correspond to 4 bits of binary respectively.

6. The PECVD double-sided coating carrier with different regions according to claim 1, characterized in that: The outer frame is made of 316L stainless steel.

7. The PECVD double-sided coating carrier with different regions according to claim 1, characterized in that: The size of the bearing member carried by the opening wall of the subunit is slightly larger than that of the bearing member carried by the subunit.

8. The PECVD double-sided coating carrier with different regions according to claim 7, characterized in that: The four apex corners of the subunit are also designed to be chamfered.

9. A method for using a PECVD zoned double-sided coating carrier, characterized in that: include: Provide at least one placement unit, the placement unit is a tungsten wire cross structure, the tungsten wire cross structure includes tungsten wires that are inserted and stretched between the outer frames to form a cross-shaped array, used to place the carrier, the tungsten wires are fastened to the outer frame through a tensioning device, and a hole-type carrier identifier is also provided on the edge of the placement unit; The carriers are placed on the upper and lower sides of the placement unit, and the upper and lower coatings are performed simultaneously.

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