Equipment for circulating in-situ deposition of Parylene and ALD (Atomic Layer Deposition)

By designing the in-situ deposition of Parylene and ALD equipment, using magnetic rods to control the cyclic rotation and temperature partitioning of the pallets, combined with the vacuum interconnection system, the problems of low equipment utilization, temperature incompatibility and air interference are solved, and efficient and uniform Film deposition improves film quality and performance.

CN119307889APending Publication Date: 2025-01-14上海派拉纶新材料股份有限公司
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Patent Information

Application Number
CN202411253197.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-09
Publication Date
2025-01-14

AI Technical Summary

Technical Problem

When the prior art combines the Parylene film deposition process and the ALD process, the equipment utilization rate is low, the time cost is high, the temperature requirements are incompatible, and air interference leads to poor film quality.

Method used

A device for cyclic deposition of Parylene and ALD in situ is designed to control the cyclic rotation of the pallet through magnetic rods to realize cyclic deposition of Parylene and ALD on the sample surface, using a temperature partitioning and vacuum interconnection system to ensure optimal deposition conditions.

Benefits of technology

It improves equipment utilization, simplifies process flow, shortens the total process time, ensures film uniformity and high purity, minimizes side reactions, and improves film quality and performance.

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Abstract

Equipment for circulating in-situ deposition of Parylene and ALD comprises a vacuum breaking valve, a vacuum pump, a cold trap, an ALD air inlet, a Parylene air inlet, a valve, a circular tray, a Parylene deposition chamber and an ALD chamber, the Parylene deposition chamber and the ALD chamber are connected through a vacuum cavity, the valve is arranged at the joint of the chambers, a sample is placed on the circular tray, and the tray is controlled by a magnetic rod to rotate circularly in the chambers. According to the Parylene and ALD circulating deposition equipment, automatic equipment is used for control, the equipment utilization rate is high, continuous manual switching between two deposition processes is not needed, and the total process time is greatly shortened. And meanwhile, temperature partition setting is adopted, the temperatures of different deposition processes are allowed to be independently set, Parylene deposition and ALD can be ensured to be carried out under the optimal temperature condition, and uniform growth of the thin film on the surface of the sample is achieved.
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Description

Technical Field

[0001] The invention relates to a Parylene film deposition process and an ALD process. The invention realizes cyclic deposition and coating of Parylene and ALD on a sample surface by controlling the rotation of a magnetic rod, and provides a device for cyclic in-situ deposition of Parylene and ALD. Background Art

[0002] Parylene thin film deposition is a technology that deposits Parylene polymer on the surface of a substrate through a chemical vapor deposition (CVD) process to form a uniform and continuous thin film. The deposited film has excellent electrical insulation, chemical inertness, and moisture and water resistance. ALD is a thin film deposition technology based on self-limiting surface reactions. It can accurately control the film thickness and composition at the atomic level. The deposited film has a high degree of uniformity and repeatability. Combining the Parylene thin film deposition process with the ALD technology can comprehensively utilize the advantages of the two processes to obtain a composite film that has the advantages of both, improve the performance of the film, and meet the needs of different applications. For example, a layer of metal oxide or nitride film, such as Al, is first deposited on the surface of an electronic device through ALD. 2 O 3 Or TiN, and then deposit a layer of Parylene film, can provide double protection, improve the wear resistance and corrosion resistance of the device; on environmental sensors and other sensitive electronic devices, the combination of Parylene film and ALD film can provide excellent water barrier properties, ensuring the stable operation of the sensor in a humid environment. This technology can further improve the performance of the film.

[0003] When the existing technology combines the Parylene thin film deposition process and the ALD process, it is necessary to continuously switch between the two deposition processes and to continuously clean and test the equipment, resulting in low equipment utilization and high time cost of the existing technology.

[0004] In addition, the temperature required for Parylene deposition is usually around room temperature, while the ALD process is used to deposit common oxides such as Al 2 O 3 The deposition temperature of is between about 150°C and 300°C. The two different temperature requirements make it difficult for the existing technology to find a compatible temperature when combining the two processes.

[0005] At the same time, Parylene monomers and ALD precursors are very sensitive to air. Dust and particles in the air enter the reaction chamber during the deposition process, which will cause defects or uneven areas on the film surface, affecting the quality of the film. In order to avoid air interference, Parylene and ALD deposition processes usually need to be carried out under high vacuum conditions, which places higher requirements on the sealing of the system combining the two processes. Summary of the invention

[0006] Based on the above problems in the prior art, the present invention provides a device for cyclic in-situ deposition of Parylene and ALD, in which a magnetic rod controls a tray to repeatedly pass through a Parylene deposition chamber-vacuum chamber-ALD deposition chamber-vacuum chamber in sequence, thereby realizing cyclic deposition of Parylene and ALD on the sample surface and coating. The present invention solves the efficiency problems of low equipment utilization and high time cost in the process of combining the Parylene deposition process and the ALD process, as well as the temperature compatibility problem caused by different deposition temperature requirements and the problem of air interference.

[0007] The technical solution adopted by the present invention is: A device for cyclic in-situ deposition of Parylene and ALD comprises a breaker valve, a vacuum pump, a cold trap, an ALD air inlet, a Parylene air inlet, a valve, a circular tray, a Parylene deposition chamber, and an ALD chamber, wherein a sample is placed on the circular tray, and the tray is controlled by a magnetic rod to cyclically rotate in the chamber to achieve film coating on the sample surface.

[0008] Furthermore, the Parylene deposition chamber and the ALD chamber are provided with air-breaking valves.

[0009] Furthermore, different deposition chambers are interconnected through vacuum chambers, and valves are provided at the chamber connections.

[0010] Furthermore, the Parylene deposition chamber is connected to a vacuum pump via a cold trap, thereby collecting the remaining Parylene monomers and protecting the vacuum pump.

[0011] The present invention achieves the following technical effects: The present invention is a device for cyclically depositing Parylene and ALD, which is controlled by automated equipment, has high equipment utilization, does not need to constantly switch between the two deposition processes, simplifies the process flow, reduces manual intervention, and greatly shortens the total process time.

[0012] The present invention adopts temperature zoning setting, allowing the temperature of different deposition processes to be set independently, which can ensure that Parylene deposition and ALD are carried out under optimal temperature conditions, achieve uniform growth of the film on the sample surface, minimize the occurrence of side reactions, and improve the quality and performance of the film. In addition, the temperature setting can be flexibly adjusted according to the needs of different materials and applications, and the process parameters can be optimized to achieve more precise process control.

[0013] The present invention adopts a vacuum interconnection system, and the interior of the chamber is kept in a high vacuum state, which can effectively prevent dust and other impurities in the outside air from entering the reaction chamber to interfere with the deposition process. The deposited film has a smooth surface, few defects, and higher purity, which can significantly improve the surface quality and performance of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is the structure of the cyclic in-situ deposition of Parylene and the ALD equipment of the present invention.

[0015] In the figure: A, Parylene deposition module; B, ALD module; 1, air-breaking valve; 2, vacuum pump; 3, cold trap; 4, ALD air inlet; 5, Parylene air inlet; 6, valve; 7, round tray; 8, Parylene deposition chamber; 9, ALD chamber. DETAILED DESCRIPTION

[0016] The technical solution of the present invention is further described below in conjunction with the accompanying drawings.

[0017] The present invention provides a device for cyclic in-situ deposition of Parylene and ALD. Figure 1 As shown, it includes a piercing valve, a vacuum pump, a cold trap, an ALD air inlet, a Parylene air inlet, a valve, a circular tray, a Parylene deposition chamber, and an ALD chamber. The equipment consists of two modules, an ALD module and a Parylene deposition module. The Parylene deposition chamber and the ALD chamber are interconnected through a vacuum chamber, and a valve is provided at the connection between the chambers. The sample is placed on a circular tray, and the tray is controlled by a magnetic rod to circulate in the chamber. The Parylene deposition module and the ALD module are respectively provided with an air inlet, a vacuum pump, and a piercing valve. In addition, the Parylene deposition chamber is connected to the vacuum pump through a cold trap, so as to collect the remaining Parylene monomers and protect the vacuum pump.

[0018] The principle of the invention is: Parylene thin film vapor deposition is a technology for vapor deposition of high molecular polymer thin films. The specific steps can be divided into evaporation-high temperature cracking-polymer low temperature deposition polymerization. By repeating the above steps again, a new layer of thin film can be formed on the sample. ALD (atomic layer deposition) is a technology that can accurately control the growth of thin films by depositing atoms or molecules on the surface of the material layer by layer. The whole process includes four main steps: first, precursor A is adsorbed onto the surface of the material; then, the excess precursor A and reaction by-products are purged with a carrier gas; then, precursor B reacts with the surface of the material; finally, the excess precursor B and reaction by-products are purged again with a carrier gas. By repeating these steps, layer after layer of thin films can be formed.

[0019] The essence of the present invention is Parylene deposition technology and ALD deposition technology. The Parylene deposition module and the ALD module respectively control the deposition temperature through the temperature control system. During operation, the sample is placed on a circular tray and rotated by a magnetic rod. The Parylene air inlet releases the Parylene monomer cracked by high temperature to purge the sample, and the ALD air inlet releases the precursor A-carrier gas-precursor B-carrier gas to purge the sample in sequence. The sample is controlled by the magnetic rod to pass through the Parylene deposition chamber-vacuum chamber-ALD deposition chamber-vacuum chamber in sequence, and then the above cycle is repeated, thereby realizing the cyclic deposition of Parylene and ALD on the sample surface and achieving film coating.

[0020] It can be seen from the above embodiments of the present invention that the present invention solves the efficiency problems of low equipment utilization and high time cost in the process of combining the Parylene deposition process and the ALD process, the temperature compatibility problem caused by different deposition temperature requirements, and the problem of air interference through the setting of magnetic rod control cyclic deposition, temperature zoning, and vacuum interconnection. The equipment consists of two modules, the Parylene deposition module and the ALD module. The Parylene deposition chamber and the ALD chamber are interconnected through a vacuum chamber, and the cyclic deposition is controlled by a magnetic rod to achieve the purpose of automatic control and maximize the utilization of the equipment, thereby greatly shortening the total process time. At the same time, the application of the vacuum interconnection system effectively prevents the entry of dust and other impurities in the outside air, keeps the interior of the chamber in a high vacuum state, and realizes the deposition of a higher purity film. The characteristics of the above technical concept of the present invention are also reflected in the temperature zoning setting of different deposition modules, which can realize the independent setting of the temperature of different deposition processes, ensure that the Parylene deposition and ALD are carried out under the optimal temperature conditions, realize the uniform growth of the film on the sample surface, minimize the occurrence of side reactions, and improve the quality and performance of the film. In the above technical concept of the present invention, the shape of the sample tray, the relative positions of different modules, and the structural positions of various components are not particularly limited by the present invention, and any reasonable adjustment can be made to any structure or feature that can achieve the purpose of the present invention.

[0021] It should be further explained that the above embodiments of the present invention are merely illustrative of the technical concept of the present invention and are used to understand the technical solution of the present invention, and are not intended to limit the scope of protection of the present invention. Any obvious changes made to the embodiments of the present invention that fall within the technical concept of the present invention shall fall within the scope of protection of the present invention.

Claims

1. A device for cyclic in-situ deposition of Parylene and ALD, characterized by: It includes 1. air-breaking valve; 2. vacuum pump; 3. cold trap; 4. ALD air inlet; 5. Parylene air inlet; 6. valve; 7. round tray; 8. Parylene deposition chamber; 9. ALD chamber. The sample is placed on the round tray, which is controlled by a magnetic rod to rotate in a cycle in the chamber to achieve film coating on the sample surface.

2. The device for cyclic in-situ deposition of Parylene and ALD according to claim 1, characterized in that: Parylene deposition chamber and ALD chamber are equipped with air-breaking valves.

3. The device for cyclic in-situ deposition of Parylene and ALD according to claim 1, characterized in that: Different deposition chambers are interconnected through vacuum chambers, and valves are provided at the chamber connections.

4. The device for cyclic in-situ deposition of Parylene and ALD according to claim 1, characterized in that: The Parylene deposition chamber is connected to the vacuum pump through a cold trap, thereby collecting the remaining Parylene monomer and protecting the vacuum pump.

Citation Information

Patent Citations

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    CN116005136A