Uniform heating device suitable for curved surface atomic layer deposition equipment

Abstract

The invention discloses a uniform heating device suitable for curved surface atomic layer deposition equipment, and aims to solve the problems that a traditional atomic layer deposition technology is only suitable for a planar substrate, and the substrate is heated unevenly when atomic layer deposition is carried out on a curved surface. A heat conduction spherical shell in the uniform heating device is a hemispherical shell and is provided with a thermocouple, a heating wire is spirally wound on the shell surface of the heat conduction spherical shell to form a heating body, a heat preservation spherical shell is composed of a vertical pipe body and a hemispherical shell, the vertical pipe body is arranged at the center of the shell of the hemispherical shell to form an integrated structure, and the heating body is arranged in the heat preservation spherical shell in a sleeved mode. A through hole is formed in the hatch cover, the vertical pipe body of the heat preservation spherical shell is inserted into the through hole, and the vertical pipe body is clamped through the adjusting buckle. The uniform heating device is applied to curved surface atomic layer deposition equipment, a TiO2 film is prepared on a substrate, and the heating uniformity is verified. According to the uniform heating device, the temperature difference of all areas of the substrate is within 10 DEG C, and the uniformity of atomic layer deposition used for curved surface coating is guaranteed.

Description

Technical Field

[0001] The invention relates to a uniform heating device suitable for curved surface atomic layer deposition equipment. Background Art

[0002] As aerospace optical windows develop towards multifaceted differentiation, the demand for growing infrared electromagnetic shielding films on large curvature (hemispherical, arched) optical windows is becoming more and more urgent. However, it is very difficult to deposit thin films uniformly on large curvatures, and the available technologies are very limited. Atomic layer deposition is a conformal chemical deposition method that has natural technical advantages in depositing uniform films on curved surfaces. Therefore, the development of an atomic layer technology suitable for curved surface film formation is an urgent need for the development of aerospace.

[0003] The atomic layer deposition technology is to use an inert gas to replace the precursor A into the reaction chamber under a relatively low vacuum, stay for a certain time, so that the precursor A and the substrate are completely adsorbed, and the inert gas is introduced to remove the excess precursor. Another precursor B is introduced again, so that the precursor B and the precursor A adsorbed on the surface of the substrate react chemically, stay for a certain time to allow the reaction to be sufficient, and a layer of the required film is generated, and then the inert gas is introduced again to remove the excess precursor. Precursor A is generally an organic metal source, and precursor B is generally an oxygen source. Taking the above reaction process as a cycle, the thickness of the deposited film on the substrate can be controlled by controlling the number of cycles. The atomic layer deposition reaction requires a certain amount of energy, and the reaction has a temperature range. The growth rate of the film is certain within the temperature range. If the temperature is too low, the insufficient energy will cause the material to fail to grow. If the temperature is too high, the precursor material will decompose, which will also cause the material to fail to grow. Therefore, the key to the problem is how to heat the substrate evenly when the curvature and size of the substrate increase so that the substrate is within the temperature range. Therefore, equipment for uniform heating of surfaces with large curvature was developed, which solved the biggest technical challenge of atomic layer deposition on curved surfaces. Summary of the invention

[0004] The purpose of the present invention is to solve the problem that traditional atomic layer deposition technology is only applicable to planar substrates, and there is uneven substrate heating when performing atomic layer deposition on curved surfaces. A uniform heating device suitable for curved surface atomic layer deposition equipment and its application are provided, so that the atomic layer deposition process can be applied to curved substrates, thereby solving the problem of uniform coating of optical windows.

[0005] The uniform heating device for curved surface atomic layer deposition equipment of the present invention comprises a heat-conducting spherical shell, a thermocouple, a heating wire, a heat-insulating spherical shell and an adjusting buckle, wherein the heat-conducting spherical shell is a hemispherical shell, the thermocouple is arranged in the middle of the outer shell of the heat-conducting spherical shell, and the heating wire is spirally coiled on the outer shell surface of the heat-conducting spherical shell to form a heating body;

[0006] The heat-insulating spherical shell is composed of a vertical tube body and a hemispherical shell. The vertical tube body is arranged at the center of the outer shell of the hemispherical shell to form an integrated structure. The heating body is sleeved in the heat-insulating spherical shell. The free ends of the heating wire and the thermocouple extend from the top of the vertical tube body.

[0007] A through hole is opened on the hatch cover, and the vertical tube body of the insulation spherical shell is inserted into the through hole. The hemispherical shell of the insulation spherical shell is located in the cabin of the atomic layer deposition equipment. The vertical tube body is clamped by adjusting the buckle to fix the position of the insulation spherical shell.

[0008] The method for preparing TiO2 thin film by atomic layer deposition using a uniform heating device suitable for curved surface atomic layer deposition equipment is implemented according to the following steps:

[0009] 1. Placing the curved substrate sample in acetone, alcohol and deionized water for ultrasonic cleaning in turn to obtain a cleaned curved substrate;

[0010] 2. Place the cleaned curved substrate in the cabin of the curved atomic layer deposition equipment, close the cabin and evacuate it, use TDMAT (tetrakis(dimethylamino)titanium) as the titanium source, water as the oxygen source, heat the curved substrate by a uniform heating device, place the heat-conducting spherical shell cover on the curved substrate, and the gap between the heat-conducting spherical shell and the curved substrate is 3-5 mm, heat the curved substrate to 170-190° C. by a heating body, control the temperature of the titanium source metal bottle to 70-80° C., and evacuate the cabin to within 5 Pa;

[0011] 3. Control the N2 flow rate to 10-15sccm; set the DMAT pulse time to 3s, the reserved adsorption time to 15s, and the purge time to 10s; set the H2O pulse time to 1s, the reserved reaction time to 10s, and the purge time to 15s as one cycle. Control the film thickness by controlling the number of cycles, thereby preparing a TiO2 film with controllable thickness on the surface of the curved substrate.

[0012] The present invention is applicable to curved surface atomic layer deposition equipment. When the atomic layer deposition is used for curved surface coating, the heating device is combined with the air inlet and outlet device of the atomic layer deposition, and the stainless steel hatch is in sealed contact with the deposition chamber to ensure the vacuum degree of the deposition chamber. The position of the heating body is changed by controlling the upper end of the heat-insulating spherical shell to slide up and down, so that the copper spherical shell wraps the substrate (curved surface / hemispherical sample). Under the control of the thermocouple, the copper spherical shell is heated by a heating wire, and the heating temperature is adjusted so that the substrate temperature falls within the deposition temperature window. The uniform heating device of the present invention achieves a temperature difference of less than 10°C in various areas of the substrate, which is much smaller than the temperature window of most atomic layer deposition reactions, and effectively ensures the uniformity of the thin film when the atomic layer deposition is used for curved surface coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1It is a front view of the uniform heating device applicable to the curved surface atomic layer deposition equipment of the present invention;

[0014] Figure 2 It is a top view of the uniform heating device applicable to the curved surface atomic layer deposition equipment of the present invention;

[0015] Figure 3 It is a schematic diagram of the three-dimensional structure of the uniform heating device applicable to the curved surface atomic layer deposition equipment of the present invention;

[0016] Figure 4 is the front view of the heating body;

[0017] Figure 5 is a top view of the heating body;

[0018] Figure 6 It is a schematic diagram of the three-dimensional structure of the heating body;

[0019] Figure 7 is an exploded view of the dynamic sealing component described in the ninth embodiment;

[0020] Figure 8 is a cross-sectional view of the support ring described in the ninth embodiment;

[0021] Fig. 9 It is a schematic diagram of assembling the dynamic sealing component described in the ninth specific implementation mode;

[0022] Fig.10 Schematic diagram of the structure in which the disc-shaped heating wire directly heats the substrate in the embodiment;

[0023] Fig.11 This is an overall simulation test diagram of the disc-shaped heating wire directly heating the substrate in the embodiment;

[0024] Fig.12 This is a local simulation test diagram of the disc-shaped heating wire directly heating the substrate in the embodiment;

[0025] Fig.13 This is an isothermal test diagram of the substrate directly heated by the disc-shaped heating wire in the embodiment;

[0026] Fig.14 Schematic diagram of the structure of heating the substrate using a uniform heating device in the embodiment;

[0027] Fig.15 This is a local simulation test diagram of heating a substrate using a uniform heating device in an embodiment;

[0028] Fig.16 This is an isothermal test diagram of a substrate heated by a uniform heating device in an embodiment;

[0029] Fig.17 This is a photo of an uncoated hemispherical curved substrate in an application example;

[0030] Fig.18 This is a photo of a TiO2 film deposited on a hemispherical curved substrate by direct heating growth using a disk-shaped heating wire in an application example;

[0031] Fig.19 This is a photograph of a TiO2 film deposited on a hemispherical curved substrate using a uniform heating device in an application example. DETAILED DESCRIPTION

[0032] Specific implementation method 1: This implementation method is suitable for a uniform heating device for curved surface atomic layer deposition equipment, comprising a heat-conducting spherical shell 1, a thermocouple 2, a heating wire 3, a heat-insulating spherical shell 4 and an adjusting buckle 5. The heat-conducting spherical shell 1 is a hemispherical shell, the thermocouple 2 is arranged in the middle of the shell of the heat-conducting spherical shell 1, and the heating wire 3 is spirally coiled on the shell surface of the heat-conducting spherical shell 1 to form a heating body;

[0033] The heat-insulating spherical shell 4 is composed of a vertical tube body 4-1 and a hemispherical shell 4-2. The vertical tube body 4-1 is arranged at the center of the outer shell of the hemispherical shell 4-2 to form an integrated structure. The heating body is sleeved in the heat-insulating spherical shell 4. The free ends of the heating wire 3 and the thermocouple 2 extend from the top of the vertical tube body 4-1.

[0034] A through hole is opened on the hatch 7, and the vertical tube body 4-1 of the insulation spherical shell 4 is inserted into the through hole. The hemispherical shell 4-2 of the insulation spherical shell 4 is located in the cabin of the atomic layer deposition equipment. The vertical tube body 4-1 is clamped by adjusting the buckle 5 to fix the position of the insulation spherical shell 4.

[0035] The probe of the thermocouple 2 in this embodiment is located in the middle of the copper spherical shell 1 and is used to feed back the temperature on the copper spherical shell 1 to achieve the PID control output of the heating wire 3 .

[0036] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the material of the heat-conducting spherical shell 1 is copper.

[0037] Specific embodiment three: This embodiment is different from specific embodiment one or two in that the heating wire 3 is embedded in the outer shell surface of the heat-conducting spherical shell 1 .

[0038] Specific embodiment 4: This embodiment is different from any one of specific embodiments 1 to 3 in that the heating wire 3 is an armored heating cable (mineral insulated heating cable).

[0039] Specific embodiment 5: This embodiment is different from specific embodiments 1 to 4 in that the heat-insulating spherical shell 4 is made of stainless steel.

[0040] Specific embodiment 6: This embodiment is different from any one of specific embodiments 1 to 5 in that the heating body is connected to the heat-insulating spherical shell 4 by expansion screws or bolts.

[0041] Specific embodiment 7: This embodiment is different from any one of specific embodiments 1 to 6 in that the heat-conducting spherical shell 1 is covered on the curved substrate, and the gap between the heat-conducting spherical shell 1 and the curved substrate is controlled to be 3 to 5 mm.

[0042] Specific embodiment eight: The difference between this embodiment and specific embodiment seven is that the gap between the heating body and the inner wall of the heat-insulating spherical shell 4 is controlled to be 2 to 5 mm.

[0043] Specific embodiment 9: This embodiment is different from specific embodiments 1 to 8 in that two handles 6 are provided on the upper surface of the hatch 7 .

[0044] In this embodiment, the handle 6 is used for loading and unloading the heating device.

[0045] Specific embodiment ten: This embodiment is different from any one of specific embodiments one to nine in that a dynamic sealing component is provided at the through hole of the hatch cover 7, and the dynamic sealing component includes an upper cover 8, an intermediate pressure component 9 and a support ring 10. The support ring 10 is in the shape of a circular ring, and an annular boss 10-1 is provided on the inner wall of the support ring 10. The sealing ring is placed on the annular boss 10-1, and an external thread is provided on the outer wall of the support ring 10. The intermediate pressure component 9 is composed of a circular ring 9-1 and an annular ridge 9-2. An annular ridge 9-2 is provided in the middle of the outer wall of the circular ring 9-1. The intermediate pressure component 9 is provided on the sealing ring, and the lower surface of the circular ring 9-1 is in contact with the sealing ring. The lower edge of the annular ridge 9-2 is placed on the upper edge of the support ring 10. The inner wall of the upper cover 8 is provided with an internal thread. The upper cover 8 is connected to the support ring 10 by threads, and the intermediate pressure component 9 is pressed by the upper cover 8.

[0046] In this embodiment, the vertical tube 4-1 of the heat-insulating spherical shell 4 is sleeved in the annular hole of the dynamic sealing component. The intermediate pressure member 9 is located between the upper cover member 8 and the supporting ring member 10. The upper cover member 8 and the supporting ring member 10 are connected by threads. During the tightening process of the upper cover member 8 and the supporting ring member 10, the sealing ring is squeezed by the intermediate pressure member 9 to achieve a sealing effect.

[0047] Specific embodiment 11: In this embodiment, the method for preparing TiO2 thin film by atomic layer deposition using a uniform heating device suitable for curved surface atomic layer deposition equipment is implemented according to the following steps:

[0048] 1. Placing the curved substrate sample in acetone, alcohol and deionized water for ultrasonic cleaning in turn to obtain a cleaned curved substrate;

[0049] 2. Place the cleaned curved substrate in the cabin of the curved atomic layer deposition equipment, close the cabin and evacuate it, use TDMAT (tetrakis(dimethylamino)titanium) as the titanium source, water as the oxygen source, heat the curved substrate sample by a uniform heating device, cover the curved substrate with a heat-conducting spherical shell 1, and the gap between the heat-conducting spherical shell 1 and the curved substrate is 3-5 mm, heat the curved substrate to 170-190° C. by a heating body, control the temperature of the titanium source metal bottle to 70-80° C., and evacuate the cabin to within 5 Pa;

[0050] 3. Control the N2 flow rate to 10-15sccm; set the DMAT pulse time to 3s, the reserved adsorption time to 15s, and the purge time to 10s; set the H2O pulse time to 1s, the reserved reaction time to 10s, and the purge time to 15s as one cycle. Control the film thickness by controlling the number of cycles, thereby preparing a TiO2 film with controllable thickness on the surface of the curved substrate.

[0051] In step three of this embodiment, the preferred number of cycles is 500 to 700 times.

[0052] Embodiment: This embodiment is applicable to a uniform heating device for curved surface atomic layer deposition equipment, comprising a heat-conducting spherical shell 1, a thermocouple 2, a heating wire 3, a heat-insulating spherical shell 4 and an adjusting buckle 5. The heat-conducting spherical shell 1 is a hemispherical shell, the thermocouple 2 is arranged in the middle of the outer shell of the heat-conducting spherical shell 1, and the probe of the thermocouple 2 is located in the middle of the heat-conducting spherical shell 1, which is used to feedback the temperature on the copper spherical shell 1 and realize the PID control output of the heating wire 3. The heating wire 3 is spirally coiled on the outer shell surface of the heat-conducting spherical shell 1 to form a heating body;

[0053] The heat-insulating spherical shell 4 is composed of a vertical tube body 4-1 and a hemispherical shell 4-2. The heat-insulating spherical shell 4 is made of stainless steel with low thermal conductivity, which reduces the temperature diffusion outward and achieves a better heat-insulating effect. The vertical tube body 4-1 is arranged at the center of the outer shell of the hemispherical shell 4-2 and forms an integrated structure. The heating body is sleeved in the heat-insulating spherical shell 4 and connected by bolts. The free ends of the heating wire 3 and the thermocouple 2 extend from the top of the vertical tube body 4-1 and are sealed.

[0054] A through hole is opened on the hatch cover 7, and two handles 6 are arranged on the upper surface of the hatch cover 7. The vertical tube body 4-1 of the insulation ball shell 4 is inserted into the through hole. A dynamic sealing component is arranged between the vertical tube body 4-1 and the through hole. The dynamic sealing component includes an upper cover 8, a medium pressure component 9 and a support ring 10. The support ring 10 is annular, and an annular boss 10-1 is arranged on the inner wall of the support ring 10. The sealing ring is placed on the annular boss 10-1, and an external thread is arranged on the outer wall of the support ring 10. The medium pressure component 9 is composed of a circular ring 9-1 and an annular convex edge 9-2. An annular convex edge 9-2 is arranged in the middle of the outer wall, the intermediate pressure part 9 is arranged on the sealing ring, the lower surface of the circular ring part 9-1 is in contact with the sealing ring, the lower edge of the annular convex edge 9-2 is placed on the upper edge of the supporting ring part 10, and the inner wall of the upper cover part 8 is provided with an internal thread. The upper cover part 8 is connected with the supporting ring part 10 through threads, and the intermediate pressure part 9 is pressed by the upper cover part 8; the hemispherical shell 4-2 of the thermal insulation spherical shell 4 is located in the cabin of the atomic layer deposition equipment, and the vertical tube body 4-1 is clamped by adjusting the buckle 5 to fix the position of the thermal insulation spherical shell 4, and the heating body cover is arranged on the hemispherical curved substrate (sample).

[0055] The heat-insulating spherical shell 4 of this embodiment is made of stainless steel with low thermal conductivity, which reduces the temperature diffusion outward and achieves a better heat-insulating effect; at the same time, the heat-insulating spherical shell 4 also has the function of connecting the heating body with the stainless steel hatch 7; the contact between the heat-insulating spherical shell 4 and the hatch 7 requires a sealing design, and the heating wiring port and the thermocouple wiring port of the heating body both extend from the top of the spherical shell 4, which also require sealing treatment; the position change of the heating body is controlled by sliding the spherical shell 4 up and down, and when the heating body is in a suitable position, the locking position adjustment bayonet 5 can fix the position of the heating body; the handle 6 is used to load and unload the heating device.

[0056] The atomic layer deposition device for coating in this embodiment adopts the atomic layer deposition device with application number CN2024100932014 and patent name "Atomic layer deposition device for uniform coating on the inner surface of hemispherical curved surface", that is, the hemispherical heater in the atomic layer deposition device is replaced with the uniform heating device of this embodiment.

[0057] The heating device for curved surface coating atomic layer deposition in this embodiment includes two parts, which can be divided into a heating body and a hatch cover structure. Specifically, it can include a copper heat-conducting spherical shell 1, a thermocouple 2, an armored heating wire 3, a heat-insulating spherical shell 4, a position adjustment buckle 5, a handle 6 and a stainless steel hatch cover 7.

[0058] The whole piece of copper is processed into the shape of a hemispherical shell, which is slightly larger than the hemispherical fairing substrate. A groove is processed on the heat-conducting spherical shell 1, and the armored heating wire 3 is evenly coiled on the hemispherical shell 1, and then fixed to ensure that the heating wire does not fall off. The thermocouple probe is placed in the middle of the heating spherical shell 1 and is also fixed.

[0059] The bottom of the heat-conducting spherical shell 1 and the bottom of the heat-insulating spherical shell 4 are fixed by expansion screws, the thermocouple 2 and the heating wire 3 are passed through the heat-insulating spherical shell 4, and the top is sealed with a sealing ring.

[0060] The upper end of the heat-insulating spherical shell 4 and the hatch 7 are also sealed by a sealing ring, but can slide and need to be fixed in position with the buckle 5.

[0061] The uniform heating device of this embodiment is used to heat the substrate (curved sample) and the disc-shaped heating wire is used to directly heat the substrate. The schematic diagram of the uniform heating device of this embodiment is as shown in FIG. Figure 14-16 The schematic diagram of the disk-shaped heating wire directly heating the substrate is shown in Figure 10-13 shown.

[0062] The disc heating wire directly heats the substrate. The thickness of the hemispherical substrate is 3mm, and the gap between the heating body and the hemispherical substrate is 3mm. The heating condition of the heating body is simulated and analyzed by COMSOL software. When the average substrate temperature is about 100℃, the substrate error is more than 30℃, which is consistent with the experimental situation. The experiment also shows that when the average substrate temperature is 200℃, the substrate temperature difference is more than 50℃.

[0063] The uniform heating device of this embodiment is used to heat the substrate, using a heating wire for heating and copper for heat conduction on the inside. After fitting, when the average substrate temperature is about 80°C, the substrate error is within 5°C. Specific experiments show that when the average substrate temperature is between 100 and 500°C, the substrate temperature difference is within the range of 5 to 10°C.

[0064] Application Example: This embodiment uses a uniform heating device suitable for curved surface atomic layer deposition equipment to perform atomic layer deposition of TiO2 thin film according to the following steps:

[0065] 1. A hemispherical curved substrate sample with a diameter of 130 mm was ultrasonically cleaned in acetone, alcohol and deionized water in turn to obtain a cleaned curved substrate;

[0066] 2. Place the cleaned curved substrate in the cabin of the curved atomic layer deposition equipment, close the cabin and evacuate it, use TDMAT as the titanium source and water as the oxygen source, heat the curved substrate sample by a uniform heating device, and cover the curved substrate with a heat-conducting spherical shell 1. The gap between the heat-conducting spherical shell 1 and the curved substrate is 5 mm. Heat the curved substrate sample to 180°C by a heating body, control the temperature of TDMAT to 80°C, and the target temperature of the gas pipeline to 150°C to ensure that no condensation occurs when N2 carries the precursor into the cabin, and evacuate the cabin to less than 5Pa;

[0067] 3. Control the N2 flow rate to 10sccm; set the DMAT pulse time to 3s, the reserved adsorption time to 15s, and the purge time to 10s; set the H2O pulse time to 1s, the reserved reaction time to 10s, and the purge time to 15s as one cycle, perform 600 cycles of deposition, and obtain a TiO2 film with a thickness of 48nm on the curved substrate surface.

[0068] Figure 17-Figure 19 The diagram shows the effects of direct heating by the heating wire and coating a TiO2 film using the uniform heating device of this embodiment.

[0069] In the range of 150-200℃, the rate at which tetrakis(dimethylamino)titanium (TDMAT) reacts with saturated water vapor (H2O) to generate titanium dioxide (TiO2) is consistent. If the temperature difference of the curved substrate exceeds 50℃, the thickness will be uneven due to inconsistent growth rate, resulting in Newton ring effect. Fig.19 It can be seen that the uniform heating device of this embodiment is used to grow the TiO2 film, which ensures the uniformity of the film grown by the curved surface atomic layer deposition because of the uniform heating.

Claims

1. A uniform heating device suitable for curved surface atomic layer deposition equipment, characterized in that The uniform heating device suitable for curved surface atomic layer deposition equipment comprises a heat-conducting spherical shell (1), a thermocouple (2), a heating wire (3), a heat-insulating spherical shell (4) and an adjusting buckle (5); the heat-conducting spherical shell (1) is a hemispherical shell; the thermocouple (2) is arranged in the middle of the outer shell of the heat-conducting spherical shell (1); and the heating wire (3) is spirally coiled on the outer shell surface of the heat-conducting spherical shell (1) to form a heating body; The heat-insulating spherical shell (4) is composed of a vertical tube body (4-1) and a hemispherical shell (4-2); the vertical tube body (4-1) is arranged at the center of the outer shell of the hemispherical shell (4-2) to form an integrated structure; the heating body is sleeved in the heat-insulating spherical shell (4); and the free ends of the heating wire (3) and the thermocouple (2) extend from the top of the vertical tube body (4-1); A through hole is formed on the hatch cover (7), and a vertical tube body (4-1) of the heat-insulating spherical shell (4) is inserted into the through hole. A hemispherical shell (4-2) of the heat-insulating spherical shell (4) is located in the cabin of the atomic layer deposition device. The vertical tube body (4-1) is clamped by adjusting the buckle (5) to fix the position of the heat-insulating spherical shell (4).

2. The uniform heating device for curved surface atomic layer deposition equipment according to claim 1, characterized in that The heat-conducting spherical shell (1) is made of red copper.

3. The uniform heating device for curved surface atomic layer deposition equipment according to claim 1, characterized in that The heating wire (3) is embedded in the outer shell surface of the heat-conducting spherical shell (1).

4. The uniform heating device for curved surface atomic layer deposition equipment according to claim 1, characterized in that The heating wire (3) is an armored heating cable.

5. The uniform heating device for curved surface atomic layer deposition equipment according to claim 1, characterized in that The heat-insulating spherical shell (4) is made of stainless steel.

6. The uniform heating device for curved surface atomic layer deposition equipment according to claim 1, characterized in that The heating body is connected to the heat-insulating spherical shell (4) via expansion screws or bolts.

7. The uniform heating device for curved surface atomic layer deposition equipment according to claim 1, characterized in that The heat-conducting spherical shell (1) is covered on the curved substrate, and the gap between the heat-conducting spherical shell (1) and the curved substrate is controlled to be 3 to 5 mm.

8. The uniform heating device for curved surface atomic layer deposition equipment according to claim 7, characterized in that The gap between the heating body and the inner wall of the heat-insulating spherical shell (4) is controlled to be 2 to 5 mm.

9. The uniform heating device for curved surface atomic layer deposition equipment according to claim 1, characterized in that Two handles (6) are provided on the upper surface of the hatch cover (7).

10. The uniform heating device for curved surface atomic layer deposition equipment according to claim 1, characterized in that A dynamic sealing component is arranged at the through hole of the hatch cover (7), and the dynamic sealing component comprises an upper cover (8), a medium pressure component (9) and a support ring (10); the support ring (10) is annular, an annular boss (10-1) is arranged on the inner wall of the support ring (10), a sealing ring is placed on the annular boss (10-1), an external thread is arranged on the outer wall of the support ring (10), and the medium pressure component (9) is composed of a circular ring (9-1) and an annular convex edge (9-1). 2), an annular convex edge (9-2) is arranged in the middle of the outer wall of the circular ring member (9-1), the intermediate pressure member (9) is arranged on the sealing ring, the lower surface of the circular ring member (9-1) is in contact with the sealing ring, the lower edge of the annular convex edge (9-2) is placed on the upper edge of the supporting ring member (10), the inner wall of the upper cover member (8) is provided with an internal thread, the upper cover member (8) and the supporting ring member (10) are connected by threads, and the intermediate pressure member (9) is pressed by the upper cover member (8).

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