Wafer gluing method and wafer gluing device

Abstract

The invention discloses a wafer gluing method and a wafer gluing device. The method comprises the following steps: providing a wafer to be processed; dividing the surface of the to-be-processed wafer into at least two areas along the radius direction of the to-be-processed wafer; corresponding glue outlets are formed in all the areas, and the glue outlet amounts of the photoresist corresponding to all the glue outlets are different; and driving the to-be-processed wafer to rotate, and spin-coating the photoresist with different glue outlet amounts to the surfaces of the corresponding areas through the corresponding glue outlets. According to different linear speeds of rotation of the wafer to be processed, the surface of the wafer to be processed is divided into at least two areas, and subsequently, rotary gluing can be performed according to the characteristic that the linear speeds of different areas are different, so that the thickness uniformity of photoresist on different areas is ensured; and different glue outlets are formed in different areas, and the glue outlets in different areas correspond to different glue outlet amounts, so that the influence of the rotating linear speed on the thickness of the photoresist is effectively reduced, and the thickness uniformity of the photoresist on the surface of the wafer is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process technology, and in particular to a wafer gluing method and a wafer gluing device. Background Art

[0002] With the continuous development of semiconductor processes and technologies, people have higher and higher requirements for chip size. In the design of chips towards smaller sizes, the improvement of photolithography process is a particularly important step in the entire chip manufacturing. The photolithography process is to replicate the required various structures and graphics on the chip, and then form the required structures and graphics through other processes. In the photolithography process, the main material for coating is photoresist, and the coating method directly affects the quality of the photolithography process. Therefore, the coating method is crucial in the chip process.

[0003] Currently, the coating method can be simplified into three stages: first, spray the photoresist on the wafer surface; second, accelerate the rotation of the wafer until the required rotation speed is reached; finally, shake off the excess photoresist.

[0004] However, the current coating method results in uneven photoresist thickness on the wafer, which affects subsequent manufacturing processes. Summary of the invention

[0005] The technical problem solved by the invention is to improve the uniformity of the thickness of the photoresist on the surface of the wafer.

[0006] To solve the above technical problems, an embodiment of the present invention provides a wafer coating method, comprising: providing a wafer to be processed; dividing the surface of the wafer to be processed into at least two areas along the radial direction of the wafer to be processed; setting a corresponding glue outlet on each area, wherein the glue outlet corresponds to a different amount of photoresist; driving the wafer to be processed to rotate, and spin-coating photoresists with different glue output amounts onto the surface of the corresponding area through the corresponding glue outlet.

[0007] Optionally, the step of driving the wafer to be processed to rotate and spin-coating photoresist with different glue output amounts onto the surface of the corresponding area through the corresponding glue outlet includes: setting a preset rotation speed corresponding to each area; driving the wafer to be processed to rotate at the preset rotation speed corresponding to each area, and spin-coating photoresist with different glue output amounts onto the surface of the corresponding area through the corresponding glue outlet.

[0008] Optionally, along the radial direction of the wafer to be processed, the surface of the wafer to be processed includes a first area and a second area; the wafer coating method also includes: setting a first glue outlet on the first area, and setting a second glue outlet on the second area; setting a first glue output amount of the photoresist corresponding to the first glue outlet; setting a first preset rotation speed corresponding to the first area; driving the wafer to be processed to rotate at the first preset rotation speed to spin-coat the photoresist corresponding to the first glue output amount onto the surface of the first area; setting a second glue output amount of the photoresist corresponding to the second glue outlet; setting a second preset rotation speed corresponding to the second area; driving the wafer to be processed to rotate at the second preset rotation speed to spin-coat the photoresist corresponding to the second glue output amount onto the surface of the second area.

[0009] Optionally, the steps of setting a first glue outlet on the first area and setting a second glue outlet on the second area include: setting the first glue outlet at the center of the first area; and setting a plurality of the second glue outlets on the second area to divide the second area into a plurality of equal parts.

[0010] Optionally, the number of the second glue outlets ranges from 4 to 6.

[0011] Optionally, the first glue output amount is greater than the second glue output amount, and the second glue output amount is the sum of glue output amounts of several second glue outlets.

[0012] Optionally, the first glue output volume ranges from 0.8 mL to 1.1 mL, and the second glue output volume ranges from 0.7 mL to 0.9 mL.

[0013] Optionally, the first preset rotational speed is greater than the second preset rotational speed.

[0014] Optionally, the first preset rotation speed is 3000 revolutions per minute, and the second preset rotation speed is 2000 revolutions per minute.

[0015] Optionally, the surface of the wafer to be processed includes a first area, a second area and a third area along the radial direction of the wafer to be processed; the wafer coating method also includes: setting a first glue outlet on the first area, setting a second glue outlet on the second area, and setting a third glue outlet on the third area; setting a first glue output amount of the photoresist corresponding to the first glue outlet; setting a first preset rotation speed corresponding to the first area; driving the wafer to be processed to rotate at the first preset rotation speed to spin-coat the photoresist corresponding to the first glue output amount onto the surface of the first area; setting a second glue output amount of the photoresist corresponding to the second glue outlet; setting a second preset rotation speed corresponding to the second area; driving the wafer to be processed to rotate at the second preset rotation speed to spin-coat the photoresist corresponding to the second glue output amount onto the surface of the second area; setting a third glue output amount of the photoresist corresponding to the third glue outlet; setting a third preset rotation speed corresponding to the third area; driving the wafer to be processed to rotate at the third preset rotation speed to spin-coat the photoresist corresponding to the third glue output amount onto the surface of the third area.

[0016] Optionally, the steps of setting the first glue outlet, the second glue outlet and the third glue outlet include: setting the first glue outlet at the center of the first area; setting a plurality of the second glue outlets on the second area to divide the second area into a plurality of equal parts; setting a plurality of the third glue outlets on the third area to divide the third area into a plurality of equal parts.

[0017] Optionally, the number of the second glue outlets ranges from 4 to 6, the number of the third glue outlets ranges from 4 to 6, the first glue output amount ranges from 0.7mL to 0.9mL, the second glue output amount ranges from 0.5mL to 0.7mL, the third glue output amount ranges from 0.3mL to 0.5mL, the first preset speed is 3000 revolutions per minute, the second preset speed is 2000 revolutions per minute, and the third preset speed is 3000 revolutions per minute.

[0018] Optionally, the wafer coating method further includes: removing the photoresist accumulated on the edge of the wafer to be processed and the back side of the wafer to be processed.

[0019] Correspondingly, the present invention also provides a wafer coating device, comprising: a providing unit, used to provide a wafer to be processed; a dividing unit, used to divide the surface of the wafer to be processed into at least two areas along the radial direction of the wafer to be processed; a setting unit, used to set corresponding glue outlets on each area, wherein the glue output amount of the photoresist corresponding to each glue outlet is different; and a driving unit, used to drive the wafer to be processed to rotate, and spin-coat photoresists with different glue output amounts onto the surface of the corresponding area through the corresponding glue outlets.

[0020] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0021] The present invention divides the surface of the wafer to be processed into at least two areas along the radial direction of the wafer to be processed, so that the surface of the wafer to be processed is divided into different areas according to different linear speeds of rotation, and subsequently, according to the different linear speeds of different areas, spin coating is performed to ensure the uniformity of the photoresist thickness in different areas; and according to the different linear speeds of the wafer to be processed when rotating, the present invention sets different glue outlets in different areas, and the glue outlets in different areas correspond to different glue output amounts, which effectively reduces the influence of the linear speed of rotation on the thickness of the photoresist and improves the uniformity of the photoresist thickness on the wafer surface.

[0022] Furthermore, the present invention sets different preset rotation speeds in different areas, that is, sets different rotation linear speeds in different areas, thereby further reducing the impact of the linear speed when the wafer to be processed rotates and improving the uniformity of the photoresist thickness on the wafer surface.

[0023] Furthermore, when the wafer to be processed is divided into a first area, a second area, and a third area, the preset rotational speed of the first area and the third area is set to be greater than the preset rotational speed of the second area. Since the first area is an area close to the center of a circle, the photoresist tends to thicken under the influence of the linear speed. By increasing the rotational speed, the photoresist can be evenly applied to the first area, and the third area is located at the edge of the wafer to be processed. Due to the effect of the surface tension of the wafer, the photoresist will accumulate at the edge. By increasing the rotational speed, the photoresist can be evenly applied to the third area, thereby achieving the goal of improving the uniformity of the photoresist thickness on the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a schematic structural diagram of a wafer to be processed in one embodiment;

[0025] Figure 2 It is a schematic flow chart of a wafer adhesive coating method in one embodiment of the present invention;

[0026] Figures 3 to 7 is a schematic structural diagram of a wafer to be processed during a wafer adhesive coating process in one embodiment of the present invention;

[0027] Figures 8 to 14 is a schematic structural diagram of a wafer to be processed during a wafer adhesive coating process in another embodiment of the present invention;

[0028] Fig.15 It is a schematic structural diagram of a wafer gluing device in one embodiment of the present invention. DETAILED DESCRIPTION

[0029] It should be noted that the terms “surface” and “on” in this specification are used to describe relative positional relationships in space and are not limited to direct contact.

[0030] Currently, please refer to the structure of the wafer to be processed Figure 1 The wafer 100 to be processed includes a glue outlet 101 , and the glue outlet 101 is located at the center of the wafer 100 to be processed.

[0031] It can be seen that the current wafer coating process discharges glue through the glue outlet 101 and drives the wafer to be processed 100 to start rotating until the required rotation speed is reached, so as to spin-coat the photoresist onto the surface of the wafer to be processed. However, since the linear speed of the wafer to be processed 100 is slower than that of the outer circle as it rotates closer to the center point, the thickness of the photoresist in the center is likely to be greater than the thickness of the outer circle. In addition, due to the effect of surface tension on the edge of the wafer to be processed 100, the photoresist will accumulate at the edge. When the viscosity of the photoresist is relatively high, the thickness of the photoresist may eventually present an uneven morphology as a whole, that is, the center area is thick, gradually becomes thinner toward the outside, and the edge is also thick. The uneven coating thickness will subsequently affect a series of processes such as exposure, development, and etching, for example, causing deviations from ideal conditions during subsequent exposure, affecting key parameters such as CD (critical dimension) and LWR (line width roughness) after lithography, and reducing the quality of lithography.

[0032] In order to solve the above technical problems, the technical solution of the present invention provides a wafer coating method, according to the different linear speeds of the wafer to be processed, the surface of the wafer to be processed is divided into at least two areas, and then the spin coating can be carried out according to the different linear speeds of the different areas, thereby ensuring the uniformity of the photoresist thickness in different areas; and according to the different linear speeds of the wafer to be processed when it rotates, the present invention sets different glue outlets in different areas, and the glue outlets in different areas correspond to different glue outputs, which effectively reduces the influence of the linear speed of rotation on the thickness of the photoresist and improves the uniformity of the photoresist thickness on the wafer surface.

[0033] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0034] Please refer to Figure 2 , the wafer gluing method comprises:

[0035] S1: Provide wafers to be processed.

[0036] S2: Dividing the surface of the wafer to be processed into at least two areas along the radial direction of the wafer to be processed.

[0037] S3: setting a corresponding glue outlet on each area, wherein the glue outlets correspond to different amounts of photoresist.

[0038] S4: driving the wafer to be processed to rotate, and spin-coating photoresist with different glue output amounts onto the surface of the corresponding area through the corresponding glue output port.

[0039] Wherein, the surface of the wafer to be processed includes a circular area and at least one annular area.

[0040] In one embodiment, the wafer to be processed is divided into two areas.

[0041] In another embodiment, the wafer to be processed is divided into three areas.

[0042] In other embodiments, the wafer to be processed is divided into four areas.

[0043] It should be noted that the more areas the wafer to be processed is divided into, the more uniform the spin coating of the photoresist on the wafer to be processed will be. When the wafer to be processed is divided into three or four areas, each area on the wafer to be processed can be spin coated separately subsequently, further ensuring the uniformity of the photoresist thickness on the wafer surface.

[0044] In a specific embodiment, one glue outlet is arranged on the circular area, a plurality of glue outlets are arranged on the annular area, and the annular area is divided into a plurality of equal parts by the plurality of glue outlets.

[0045] In one embodiment, when there are two glue outlets on the annular area, the annular area is divided into two equal parts by the two glue outlets.

[0046] In another embodiment, when the number of the glue outlets on the annular area is three, the annular area is divided into three equal parts by the three glue outlets.

[0047] In other embodiments, when the number of the glue outlets on the annular area is four, the annular area is divided into four equal parts by the four glue outlets.

[0048] In the above scheme, the present invention divides the surface of the wafer to be processed into at least two areas along the radial direction of the wafer to be processed, so that the surface of the wafer to be processed is divided into different areas according to the different linear speeds of rotation, and then spin coating can be performed according to the different linear speeds of different areas, thereby ensuring the uniformity of the photoresist thickness in different areas; and according to the different linear speeds of the wafer to be processed when rotating, the present invention sets different glue outlets in different areas, and the glue outlets in different areas correspond to different glue outputs, which effectively reduces the influence of the linear speed of rotation on the thickness of the photoresist and improves the uniformity of the photoresist thickness on the wafer surface.

[0049] In some embodiments of the present invention, the step of driving the wafer to be processed to rotate in step S4, and spin-coating photoresists with different glue output amounts onto the surface of corresponding regions through corresponding glue output ports includes:

[0050] S41: Setting the preset rotation speed corresponding to each area.

[0051] S42: driving the wafer to be processed to rotate at a preset rotation speed corresponding to each area, and spin-coating photoresist with different glue output amounts onto the surface of the corresponding area through the corresponding glue outlet.

[0052] In a specific embodiment, the preset rotation speed of the area close to the center of the circle and the preset rotation speed of the area far from the center of the circle are set to high speed.

[0053] In the above scheme, since the linear speed of the area closer to the center of the circle of the wafer to be processed is slower than the linear speed of the area farther from the center of the circle when rotating, the thickness of the photoresist on the area close to the center of the circle is easily greater than the thickness of the photoresist on the area farther from the center of the circle. The present invention sets the preset rotation speed to a higher rotation speed when spin-coating the photoresist on the area close to the center of the circle, so that the photoresist on the area close to the center of the circle can be quickly thrown away at a high rotation speed, thereby reducing the thickness of the photoresist on the area close to the center of the circle, thereby ensuring the uniformity of the photoresist thickness on the wafer surface.

[0054] In addition, since the area far from the center of the circle is located at the edge of the wafer, the effect of surface tension will cause the photoresist to accumulate at the edge of the wafer, thereby increasing the thickness of the photoresist on the area far from the center of the circle. The present invention sets the preset rotation speed to a higher rotation speed when spin-coating the photoresist on the area far from the center of the circle, so that the photoresist on the area far from the center of the circle can be quickly thrown away at a high rotation speed, thereby reducing the thickness of the photoresist on the area far from the center of the circle, thereby ensuring the uniformity of the photoresist thickness on the wafer surface.

[0055] Accordingly, please refer to the above embodiments. Fig.15 The present invention also provides a wafer glue coating device 400, comprising:

[0056] A providing unit 401 is used to provide a wafer to be processed;

[0057] A dividing unit 402 is used to divide the surface of the wafer to be processed into at least two areas along the radial direction of the wafer to be processed;

[0058] A setting unit 403 is used to set a corresponding glue outlet on each area, wherein the glue outlets correspond to different amounts of photoresist;

[0059] The driving unit 404 is used to drive the wafer to be processed to rotate, and to spin-coat photoresist with different glue output amounts onto the surface of the corresponding area through the corresponding glue output port.

[0060] Combine the following Figures 3 to 7 The wafer adhesive coating method of the present invention is described in detail.

[0061] Figure 3 Schematic diagram of the structure of the wafer 200 to be processed according to an embodiment of the present invention.

[0062] refer to Figure 3 , along the radial direction of the wafer 200 to be processed, the surface of the wafer 200 to be processed includes: a first area 201 and a second area 202 .

[0063] In some embodiments of the present invention, the first area 201 is circular, and the second area 202 is annular.

[0064] In some embodiments of the present invention, the size of the wafer 200 to be processed is 6 inches, 8 inches, or 12 inches.

[0065] Taking the 8-inch size of the wafer 200 to be processed as an example, the size range of the first area 201 is 0 mm to 50 mm, and the size range of the second area 202 is 51 mm to 100 mm.

[0066] In some embodiments of the present invention, the area of ​​the wafer 200 to be processed is divided into equal parts.

[0067] The division of wafers of other sizes to be processed is the same as the above-mentioned scheme of equally dividing the wafers to be processed, the difference being that the sizes corresponding to the divided areas are different, which will not be described in detail here.

[0068] Please Figure 3 Based on reference Figure 4 , Figure 3 is a top view of the wafer 200 to be processed, Figure 4 yes Figure 3 The cross-sectional view of the wafer coating method further includes: setting a first glue outlet 2011 on the first area 201; setting a first glue output amount 2012 of the photoresist corresponding to the first glue outlet 2011; and setting a first preset rotation speed corresponding to the first area 201.

[0069] In some embodiments of the present invention, the aperture of the first glue outlet 2011 ranges from 0.8 mm to 1.0 mm.

[0070] In some embodiments of the present invention, the number of the first glue outlets 2011 ranges from 1 to 6.

[0071] In some embodiments of the present invention, when there is one first glue outlet 2011 , the step of setting the first glue outlet 2011 on the first area 201 includes: setting the first glue outlet 2011 at the center of the first area 201 .

[0072] In other embodiments, when there are multiple first glue outlets, the first glue outlets are evenly distributed on the surface of the first area.

[0073] In other embodiments, when there are several first glue outlets, the shapes and apertures of the several first glue outlets are the same, or the shapes and apertures of the several first glue outlets are different.

[0074] In some embodiments of the present invention, the first glue outlet 2011 is a conical glue outlet, and there is a glue outlet at the bottom of the conical glue outlet to provide photoresist.

[0075] In some embodiments of the present invention, the first glue outlet is a conical glue outlet, and there are a plurality of glue outlets at the bottom of the conical glue outlet, and the plurality of glue outlets are evenly distributed on the bottom surface of the conical glue outlet to form a shower shape to provide photoresist.

[0076] Please Figure 4 Based on reference Figure 5 , Figure 5 The viewing direction and Figure 4 Consistently, the wafer to be processed 200 is driven to rotate at a first preset speed to spin-coat the photoresist corresponding to the first glue output 2012 onto the surface of the first region 201 .

[0077] In some embodiments of the present invention, the photoresist of the first glue output amount 2012 is also spin-coated onto a part of or the entire surface of the second region 202 as the wafer 200 to be processed rotates.

[0078] In this embodiment, after the photoresist with the first output amount 2012 is spin-spun, an initial photoresist layer 2051 covering the first area 201 and a portion of the second area 202 is obtained.

[0079] In some embodiments of the present invention, the wafer 200 to be processed is located on an operating table 203, and the bottom of the operating table 203 is connected to an operating rod 204. The operating rod 204 is driven to rotate to drive the operating table 203 and the wafer 200 to be processed located on the operating table 203 to start rotating at a first preset speed.

[0080] Please Figure 5 Based on reference Figure 6 , Figure 6 The viewing direction and Figure 5Consistently, a second glue outlet 2021 is set on the second area 202; a second glue output amount 2022 of the photoresist corresponding to the second glue outlet 2021 is set; and a second preset rotation speed corresponding to the second area 202 is set.

[0081] In some embodiments of the present invention, the step of providing a second glue outlet 2021 on the second area 202 includes: providing a plurality of second glue outlets 2021 on the second area 202 to divide the second area 202 into a plurality of equal parts.

[0082] In some embodiments of the present invention, the number of the second glue outlets 2021 ranges from 4 to 6.

[0083] In this embodiment, the number of the second glue outlets 2021 is four.

[0084] In some embodiments of the present invention, the first glue output volume 2012 ranges from 0.8 mL to 1.1 mL, and the second glue output volume 2022 ranges from 0.7 mL to 0.9 mL.

[0085] In some embodiments of the present invention, the first glue output amount 2012 is greater than the second glue output amount 2022 , the first glue output amount 2012 is the sum of glue output amounts of the first glue outlets 2011 , and the second glue output amount 2022 is the sum of glue output amounts of several second glue outlets 2021 .

[0086] In this embodiment, the first glue output amount 2012 is 1.1 times to 1.4 times the second glue output amount 2022 .

[0087] In some embodiments of the present invention, the shape and aperture of the second glue outlet 2021 are the same as those of the first glue outlet 2011 .

[0088] In other embodiments, the shapes and apertures of the plurality of second glue outlets are the same, or the shapes and apertures of the plurality of second glue outlets are different.

[0089] Since when the wafer 200 to be processed is rotated, the first amount of photoresist on the first area 201 will be spin-coated to the surface of the first area and the surface of the second area as the wafer 200 to be processed rotates, in order to ensure the thickness of the photoresist on the surface of the first area and the surface of the second area, the first amount of photoresist 2012 is set to 1.1 times to 1.4 times the second amount of photoresist 2022, so that the photoresist of the first amount of photoresist 2012 is removed from the amount of photoresist thrown out of the area during rotation, and the thickness of the photoresist on the first area can still be guaranteed, and the excess photoresist on the second amount of photoresist 2022 will also be thrown away from the surface of the second area as the wafer 200 to be processed rotates, thereby ensuring the thickness of the photoresist on the second area.

[0090] Please Figure 6 Based on reference Figure 7 , Figure 7 The viewing direction and Figure 6 Consistently, the wafer to be processed 200 is driven to rotate at a second preset rotation speed to spin-coat the photoresist corresponding to the second glue output 2022 onto the surface of the second area 202 .

[0091] In some embodiments of the present invention, the first preset rotation speed ranges from 2500 to 3500 revolutions per minute, and the second preset rotation speed ranges from 1500 to 2500 revolutions per minute.

[0092] In some embodiments of the present invention, the first preset rotation speed is greater than the second preset rotation speed.

[0093] Since the first area is an area close to the center of the wafer 200 to be processed, the linear speed of the first area is slow during the rotation of the wafer 200 to be processed, so that the photoresist corresponding to the first glue output of the first area cannot be evenly coated on the surface of the first area. The present invention sets the first preset rotation speed to be greater than the second preset rotation speed, and increases the linear speed when spin-coating the photoresist on the surface of the first area to ensure the uniformity of the photoresist thickness on the first area.

[0094] In this embodiment, the first preset rotation speed is 3000 revolutions per minute, and the second preset rotation speed is 2000 revolutions per minute.

[0095] In this embodiment, the photoresist of the second output amount 2022 is spin-spun to obtain a photoresist layer 205 covering the surface of the wafer 200 to be processed.

[0096] In some embodiments of the present invention, the wafer 200 to be processed is located on an operating table 203, and the bottom of the operating table 203 is connected to an operating rod 204. The operating rod 204 is driven to rotate to drive the operating table 203 and the wafer 200 to be processed located on the operating table 203 to start rotating at a second preset speed.

[0097] Correspondingly, with respect to the above embodiment in which the wafer to be processed is divided into two areas, the present invention further provides a wafer glue coating device, comprising: a providing unit, a dividing unit, a first setting unit, a first driving unit, a second setting unit and a second driving unit.

[0098] In a specific embodiment, the providing unit is used to provide a wafer to be processed; the dividing unit is used to divide the surface of the wafer to be processed into a first area and a second area along the radial direction of the wafer to be processed; the first setting unit is used to set the corresponding glue discharge parameters on the first area, specifically, to set a first glue discharge port on the first area, set a first glue discharge amount of the photoresist corresponding to the first glue discharge port, and set a first preset rotation speed corresponding to the first area; the first driving unit is used to spin-coat the photoresist onto the surface of the first area according to the glue discharge parameters set in the first setting unit, specifically, to drive the wafer to be processed to rotate at a first preset rotation speed. The first setting unit is used to set the corresponding glue output parameters on the second area, specifically, a second glue outlet is set on the second area, a second glue output amount of the photoresist corresponding to the second glue outlet is set, and a second preset speed corresponding to the second area is set; the second driving unit is used to spin-coat the photoresist onto the surface of the second area according to the glue output parameters set in the second setting unit, specifically, the wafer to be processed is driven to rotate at the second preset speed, so as to spin-coat the photoresist corresponding to the second glue output amount onto the surface of the second area.

[0099] Combine the following Figures 8 to 12 The wafer adhesive coating method of the present invention is described in detail.

[0100] Figure 8 Schematic diagram of the structure of a wafer 300 to be processed according to another embodiment of the present invention.

[0101] refer to Fig. 9 Along the radial direction of the wafer 300 to be processed, the surface of the wafer 300 to be processed includes: a first area 301, a second area 302 and a third area 303.

[0102] In some embodiments of the present invention, the first area 301 is circular, and the second area 302 and the third area 303 are annular.

[0103] In some embodiments of the present invention, the size of the wafer 300 to be processed is 6 inches, 8 inches, or 12 inches.

[0104] Taking the size of the wafer 300 to be processed as 12 inches as an example, the size range of the first area 301 is 0 mm to 75 mm, the size range of the second area 302 is 76 mm to 130 mm, and the size range of the third area 303 is 131 mm to 150 mm.

[0105] In some embodiments of the present invention, the area of ​​the wafer 300 to be processed is divided into equal parts.

[0106] The division of wafers of other sizes to be processed is the same as the above-mentioned scheme of equally dividing the wafers to be processed, the difference being that the sizes corresponding to the divided areas are different, which will not be described in detail here.

[0107] Please Figure 8 Based on reference Fig. 9 , Figure 8 is a top view of the wafer 300 to be processed, Fig. 9 yes Figure 3 The cross-sectional view of the wafer coating method further includes: setting a first glue outlet 3011 on the first area 301; setting a first glue output amount 3012 of the photoresist corresponding to the first glue outlet 3011; and setting a first preset rotation speed corresponding to the first area 301.

[0108] In some embodiments of the present invention, the aperture of the first glue outlet 3011 ranges from 0.8 mm to 1 mm.

[0109] In some embodiments of the present invention, the number of the first glue outlets 3011 ranges from 1 to 6.

[0110] In some embodiments of the present invention, when there is one first glue outlet 3011 , the step of setting the first glue outlet 3011 on the first area 301 includes: setting the first glue outlet 3011 at the center of the first area 301 .

[0111] In other embodiments, when there are multiple first glue outlets, the first glue outlets are evenly distributed on the surface of the first area.

[0112] In other embodiments, when there are several first glue outlets, the shapes and apertures of the several first glue outlets are the same, or the shapes and apertures of the several first glue outlets are different.

[0113] In some embodiments of the present invention, the first glue outlet 3011 is a conical glue outlet, and there is a glue outlet at the bottom of the conical glue outlet to provide photoresist.

[0114] In some embodiments of the present invention, the first glue outlet is a conical glue outlet, and there are a plurality of glue outlets at the bottom of the conical glue outlet, and the plurality of glue outlets are evenly distributed on the bottom surface of the conical glue outlet to form a shower shape to provide photoresist.

[0115] Please Fig. 9 Based on reference Fig.10 , Fig.10 The viewing direction and Fig. 9 Consistently, the wafer to be processed 300 is driven to rotate at a first preset speed to spin-coat the photoresist corresponding to the first glue output 3012 onto the surface of the first area 301 .

[0116] In some embodiments of the present invention, the photoresist of the first glue output amount 3012 is also spin-coated onto a part or all of the surface of the second area 302 and the third area 303 as the wafer 300 to be processed rotates.

[0117] In this embodiment, the photoresist with the first output amount 3012 is spin-coated onto the first region 301 and a portion of the second region 302 .

[0118] In this embodiment, after the photoresist with the first output amount 3012 is spin-spun, a first initial photoresist layer 3061 covering the first area 301 and a portion of the second area 302 is obtained.

[0119] In some embodiments of the present invention, the wafer 300 to be processed is located on an operating table 304, and the bottom of the operating table 304 is connected to an operating rod 305. The operating rod 305 is driven to rotate to drive the operating table 304 and the wafer 300 to be processed located on the operating table 304 to start rotating at a first preset speed.

[0120] Please Fig.10 Based on reference Fig.11 , Fig.11 The viewing direction and Fig.10 Consistently, a second glue outlet 3021 is set on the second area 302; a second glue output amount 3022 of the photoresist corresponding to the second glue outlet 3021 is set; and a second preset rotation speed corresponding to the second area 302 is set.

[0121] In some embodiments of the present invention, the step of providing a second glue outlet 3021 on the second area 302 includes: providing a plurality of second glue outlets 3021 on the second area 302 to divide the second area 302 into a plurality of equal parts.

[0122] In some embodiments of the present invention, the number of the second glue outlets 3021 ranges from 4 to 6.

[0123] In this embodiment, the number of the second glue outlets 3021 is four.

[0124] In some embodiments of the present invention, the first glue output volume 3012 ranges from 0.7 mL to 0.9 mL, and the second glue output volume 3022 ranges from 0.5 mL to 0.7 mL.

[0125] In some embodiments of the present invention, the first glue output amount 3012 is greater than the second glue output amount 3022 , the first glue output amount 3012 is the sum of glue output amounts of the first glue outlets 3011 , and the second glue output amount 3022 is the sum of glue output amounts of several second glue outlets 3021 .

[0126] In this embodiment, the first glue output amount 3012 is 1.1 to 1.4 times the second glue output amount 3022 .

[0127] In some embodiments of the present invention, the shape and aperture of the second glue outlet 3021 are the same as those of the first glue outlet 3011 .

[0128] In other embodiments, the shapes and apertures of the plurality of second glue outlets are the same, or the shapes and apertures of the plurality of second glue outlets are different.

[0129] Since when the wafer 300 to be processed is rotated, the first amount of photoresist on the first area 301 will be spin-coated to the surface of the first area and the surface of the second area as the wafer 300 to be processed rotates, in order to ensure the thickness of the photoresist on the surface of the first area and the surface of the second area, the first amount of photoresist 3012 is set to 1.2 times of the second amount of photoresist 3022, so that the photoresist of the first amount of photoresist 3012 is removed from the amount of photoresist thrown out of the area during rotation, and the thickness of the photoresist on the first area can still be guaranteed, and the excess photoresist on the second amount of photoresist 3022 will also be thrown away from the surface of the second area as the wafer 300 to be processed rotates, thereby ensuring the thickness of the photoresist on the second area.

[0130] Please Fig.11 Based on reference Fig.12 , Fig.12 The viewing direction and Fig.11 Consistently, the wafer to be processed 300 is driven to rotate at a second preset speed to spin-coat the photoresist corresponding to the second glue output 3022 onto the surface of the second area 302 .

[0131] In some embodiments of the present invention, the first preset rotation speed ranges from 2500 to 3500 revolutions per minute, and the second preset rotation speed ranges from 1500 to 2500 revolutions per minute.

[0132] In some embodiments of the present invention, the first preset rotation speed is greater than the second preset rotation speed.

[0133] Since the first area is an area close to the center of the wafer 300 to be processed, the linear speed of the first area is slow during the rotation of the wafer 300 to be processed, so that the photoresist corresponding to the first glue output of the first area cannot be evenly coated on the surface of the first area. The present invention sets the first preset rotation speed to be greater than the second preset rotation speed, and increases the linear speed when spin-coating the photoresist on the surface of the first area to ensure the uniformity of the photoresist thickness on the first area.

[0134] In this embodiment, the first preset rotation speed is 3000 revolutions per minute, and the second preset rotation speed is 2000 revolutions per minute.

[0135] In some embodiments of the present invention, the photoresist of the second glue output amount 3022 is also spin-coated onto a part of or the entire surface of the third area 303 as the wafer 300 to be processed rotates.

[0136] In this embodiment, after the second photoresist output 3022 is spin-spun, a second initial photoresist layer 3062 covering the first area 301 , the second area 302 and a portion of the third area 303 is obtained.

[0137] In some embodiments of the present invention, the wafer 300 to be processed is located on an operating table 304, and the bottom of the operating table 304 is connected to an operating rod 305. The operating rod 305 is driven to rotate to drive the operating table 304 and the wafer 300 to be processed located on the operating table 304 to start rotating at a second preset speed.

[0138] Please Fig.12 Based on reference Fig.13 , Fig.13 The viewing direction and Fig.12 Consistently, a plurality of the third glue outlets 3031 are provided on the third area 303 to divide the third area 303 into a plurality of equal parts.

[0139] In some embodiments of the present invention, the number of the third glue outlets 3031 ranges from 4 to 6.

[0140] In this embodiment, the number of the third glue outlets 3031 is 4.

[0141] In some embodiments of the present invention, the third glue output volume 3032 ranges from 0.3 mL to 0.5 mL.

[0142] In some embodiments of the present invention, the third glue output amount 3032 is 0.8 times the second glue output amount 3022 .

[0143] In some embodiments of the present invention, the third glue output amount 3032 is 0.8 times the second glue output amount 3022 .

[0144] In some embodiments of the present invention, the shape and aperture of the third glue outlet 3021 are the same as those of the first glue outlet 3011 and the second glue outlet 3012 .

[0145] In other embodiments, the shapes and apertures of the plurality of third glue outlets are the same, or the shapes and apertures of the plurality of third glue outlets are different.

[0146] In some embodiments of the present invention, the third preset rotation speed ranges from 2500 revolutions per minute to 3500 revolutions per minute.

[0147] In some embodiments of the present invention, the third preset rotation speed is 3000 revolutions per minute.

[0148] In this embodiment, the photoresist with the third output amount 3032 is subjected to spin spinning to obtain a photoresist layer 305 covering the surface of the wafer 300 to be processed.

[0149] The third region is a region far away from the center of the wafer 300 to be processed, that is, the third region is located at the edge of the wafer to be processed. Due to the effect of surface tension on the edge of the wafer to be processed, the photoresist will accumulate on the edge, and when the viscosity of the photoresist is large, the thickness of the photoresist on the third region will present an uneven morphology. The present invention reduces the third glue output amount 3032 by setting the third glue output amount 3032 to 0.8 times the second glue output amount 3022, thereby effectively reducing the amount of photoresist accumulated at the edge (that is, on the third region) and ensuring the uniformity of the photoresist thickness on the third region.

[0150] Please Fig.13 Based on reference Fig.14 , Fig.14 The viewing direction and Fig.13 Consistently, the wafer to be processed 300 is driven to rotate at a third preset speed to spin-coat the photoresist corresponding to the third glue output 3032 onto the surface of the third area 303 .

[0151] In some embodiments of the present invention, the wafer 300 to be processed is located on an operating table 304, and the bottom of the operating table 304 is connected to an operating rod 305. The operating rod 305 is driven to rotate to drive the operating table 304 and the wafer 300 to be processed located on the operating table 304 to start rotating at a third preset speed.

[0152] In other embodiments, the wafer coating method further includes: removing the photoresist accumulated on the edge of the wafer 300 to be processed and the back side of the wafer 300 to be processed.

[0153] Correspondingly, with respect to the above embodiment in which the wafer to be processed is divided into three areas, the present invention also provides a wafer coating device, including: a providing unit, a dividing unit, a first setting unit, a first driving unit, a second setting unit, a second driving unit, a third setting unit and a third driving unit.

[0154] In a specific embodiment, the providing unit is used to provide a wafer to be processed; the dividing unit is used to divide the surface of the wafer to be processed into a first area and a second area along the radial direction of the wafer to be processed; the first setting unit is used to set the corresponding glue discharge parameters in the first area, specifically, a first glue outlet is set in the first area, a first glue discharge amount of the photoresist corresponding to the first glue outlet is set, and a first preset rotation speed corresponding to the first area is set; the first driving unit is used to spin-coat the photoresist onto the surface of the first area according to the glue discharge parameters set in the first setting unit, specifically, the wafer to be processed is driven to rotate at the first preset rotation speed, so that the photoresist corresponding to the first glue discharge amount is spin-coated onto the surface of the first area; the second setting unit is used to set the corresponding glue discharge parameters in the second area, specifically, a second glue outlet is set in the second area, and a first glue discharge amount of the photoresist corresponding to the second glue outlet is set The second output amount of the corresponding photoresist is set, and the second preset rotation speed corresponding to the second area is set; the second driving unit is used to spin-coat the photoresist onto the surface of the second area according to the output parameters set in the second setting unit, specifically, drive the wafer to be processed to rotate at the second preset rotation speed to spin-coat the photoresist corresponding to the second output amount onto the surface of the second area; the third setting unit is used to set the output parameters corresponding to the third area, specifically, set a third output port on the third area, set the third output amount of the photoresist corresponding to the third output port, and set the third preset rotation speed corresponding to the third area; the third driving unit is used to spin-coat the photoresist onto the surface of the third area according to the output parameters set in the third setting unit, specifically, drive the wafer to be processed to rotate at the third preset rotation speed to spin-coat the photoresist corresponding to the third output amount onto the surface of the third area.

[0155] In the above scheme, when the wafer 300 to be processed is divided into a first area 301, a second area 302 and a third area 303, the preset rotation speeds of the first area 301 and the third area 303 are set to be greater than the preset rotation speed of the second area 302. Since the first area 301 is an area close to the center of the circle, the photoresist is likely to thicken under the influence of the linear velocity. By increasing the rotation speed, the photoresist can be evenly applied to the first area 301, and the third area 303 is located at the edge of the wafer 300 to be processed. Due to the surface tension of the wafer, the photoresist will accumulate at the edge. By increasing the rotation speed, the photoresist can be evenly applied to the third area 303, thereby achieving the improvement of the uniformity of the photoresist thickness on the wafer surface.

[0156] In other embodiments, along the radial direction of the wafer to be processed, the surface of the wafer to be processed includes: a first area, a second area, a third area and a fourth area.

[0157] In the above scheme, the wafer gluing method of the first area, the second area and the third area is the same as Figures 8 to 12 The embodiment is the same as that of the present invention and will not be described again herein, the difference being that the wafer coating method of the present embodiment further includes: setting a fourth glue outlet on the fourth area; setting a fourth glue output amount of the photoresist corresponding to the fourth glue outlet; setting a fourth preset rotation speed corresponding to the fourth area; driving the wafer to be processed to rotate at the fourth preset rotation speed so as to spin-coat the photoresist corresponding to the fourth glue output amount onto the surface of the fourth area.

[0158] In some embodiments of the present invention, the method for removing the edge of the wafer 300 to be processed and the photoresist accumulated on the back side of the wafer 300 to be processed is edge bevel removal (EBR).

[0159] The cleaning solution for removing the edge of the wafer 300 to be processed and the photoresist accumulated on the back side of the wafer 300 to be processed includes one or more components of a surfactant, a bactericide, and a polishing agent.

[0160] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A wafer gluing method, characterized in that: include: Providing wafers to be processed; Dividing the surface of the wafer to be processed into at least two areas along the radial direction of the wafer to be processed; A corresponding glue outlet is arranged on each area, wherein the glue outlets correspond to different amounts of photoresist; The wafer to be processed is driven to rotate, and photoresist with different glue output amounts is spin-coated onto the surface of the corresponding area through the corresponding glue output port.

2. The wafer gluing method according to claim 1, characterized in that: The steps of driving the wafer to be processed to rotate and spin coating photoresist with different glue output amounts onto the surface of the corresponding area through the corresponding glue outlet include: Set the preset speed corresponding to each area; The wafer to be processed is driven to rotate at a preset rotation speed corresponding to each area, and photoresist with different glue output amounts is spin-coated onto the surface of the corresponding area through the corresponding glue outlet.

3. The wafer gluing method according to claim 2, characterized in that: Along the radial direction of the wafer to be processed, the surface of the wafer to be processed includes a first area and a second area; The wafer gluing method further comprises: A first glue outlet is provided on the first area, and a second glue outlet is provided on the second area; Setting a first glue output amount of the photoresist corresponding to the first glue output port; Setting a first preset speed corresponding to the first area; Driving the wafer to be processed to rotate at a first preset rotation speed to spin-coat the photoresist corresponding to the first glue output amount onto the surface of the first area; Setting a second glue output amount of the photoresist corresponding to the second glue output port; Setting a second preset speed corresponding to the second area; The wafer to be processed is driven to rotate at a second preset rotation speed so as to spin-coat the photoresist corresponding to the second glue output amount onto the surface of the second area.

4. The wafer gluing method according to claim 3, characterized in that: The steps of setting a first glue outlet on the first area and setting a second glue outlet on the second area include: The first glue outlet is arranged at the center of the first area; A plurality of the second glue outlets are arranged on the second area to divide the second area into a plurality of equal parts.

5. The wafer gluing method according to claim 4, characterized in that: The number of the second glue outlets ranges from 4 to 6.

6. The wafer gluing method according to claim 4, characterized in that: The first glue output amount is greater than the second glue output amount, and the second glue output amount is the sum of glue output amounts of a plurality of the second glue output ports.

7. The wafer adhesive coating method according to claim 6, characterized in that: The first glue output amount ranges from 0.8 mL to 1.1 mL, and the second glue output amount ranges from 0.7 mL to 0.9 mL.

8. The wafer gluing method according to claim 3, characterized in that: The first preset rotation speed is greater than the second preset rotation speed.

9. The wafer gluing method according to claim 8, characterized in that: The first preset rotation speed is 3000 revolutions per minute, and the second preset rotation speed is 2000 revolutions per minute.

10. The wafer adhesive coating method according to claim 2, characterized in that: The surface of the wafer to be processed includes a first area, a second area and a third area along the radial direction of the wafer to be processed; The wafer gluing method further comprises: A first glue outlet is provided on the first area, a second glue outlet is provided on the second area, and a third glue outlet is provided on the third area; Setting a first glue output amount of the photoresist corresponding to the first glue output port; Setting a first preset speed corresponding to the first area; Driving the wafer to be processed to rotate at a first preset rotation speed to spin-coat the photoresist corresponding to the first glue output amount onto the surface of the first area; Setting a second glue output amount of the photoresist corresponding to the second glue output port; Setting a second preset speed corresponding to the second area; Driving the wafer to be processed to rotate at a second preset rotation speed to spin-coat the photoresist corresponding to the second glue output amount onto the surface of the second area; Setting a third glue output amount of the photoresist corresponding to the third glue output port; Setting a third preset speed corresponding to the third area; The wafer to be processed is driven to rotate at a third preset rotation speed so as to spin-coat the photoresist corresponding to the third glue output amount onto the surface of the third area.

11. The wafer adhesive coating method according to claim 10, characterized in that: The steps of setting the first glue outlet, the second glue outlet and the third glue outlet include: The first glue outlet is arranged at the center of the first area; Arranging a plurality of the second glue outlets on the second area to divide the second area into a plurality of equal parts; A plurality of the third glue outlets are arranged on the third area to divide the third area into a plurality of equal parts.

12. The wafer adhesive coating method according to claim 11, characterized in that: The number of the second glue outlets ranges from 4 to 6, the number of the third glue outlets ranges from 4 to 6, the first glue output amount ranges from 0.7mL to 0.9mL, the second glue output amount ranges from 0.5mL to 0.7mL, the third glue output amount ranges from 0.3mL to 0.5mL, the first preset speed is 3000 revolutions per minute, the second preset speed is 2000 revolutions per minute, and the third preset speed is 3000 revolutions per minute.

13. The wafer adhesive coating method according to claim 2, characterized in that: Also includes: The photoresist accumulated on the edge of the wafer to be processed and the back side of the wafer to be processed is removed.

14. A wafer glue coating device, characterized in that: include: A providing unit, used for providing wafers to be processed; A dividing unit, used for dividing the surface of the wafer to be processed into at least two areas along the radial direction of the wafer to be processed; A setting unit is used to set a corresponding glue outlet on each area, wherein the glue outlets correspond to different amounts of photoresist; The driving unit is used to drive the wafer to be processed to rotate, and to spin-coat photoresist with different glue output amounts onto the surface of the corresponding area through the corresponding glue output port.

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