Wafer welding protection jig

Abstract

The wafer welding protection jig comprises a jig body and a fixed base, the fixed base is arranged on the jig body, a first air channel is formed in the fixed base, and the first air channel communicates with a fluid supply device; the adjusting disc is in a circular ring shape, and the adjusting disc is arranged in the fixed base and can rotate by taking a first preset central axis as a rotating center; a plurality of groups of air channel assemblies are arranged in the fixed disc, the plurality of groups of air channel assemblies are rotationally symmetrical about a first preset central axis, each group of air channel assembly comprises a plurality of third air channels which are uniformly distributed by taking the first preset central axis as a rotation center, and the detection assembly is arranged on the fixed disc and is used for detecting the temperature of fluid flowing through the wafer; and the control assembly is arranged on the jig body. According to the jig, the air supply flow of the fluid supply device and the rotating angle of the adjusting disc can be adjusted according to the temperature value detected by the detection assembly.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor production equipment, and in particular to a wafer welding protection jig. Background Art

[0002] Semiconductor advanced packaging, namely wafer-level advanced packaging, is a technology that cuts wafers into small chip units and then packages them one by one. Wafer-level packaging refers to packaging and testing on the entire wafer. Advanced packaging is an important track in the direction of surpassing Moore's Law. It can provide better compatibility and higher connection density, so that the improvement of system integration is no longer limited to the same chip. In the post-Moore era, chip manufacturing faces the dual challenges of physical limits and marginal improvement of economic benefits. Advanced packaging plays a more important role in improving chip integration, electrical connections and performance optimization. All links in the industrial chain benefit from this round of technological innovation.

[0003] In the advanced packaging process of wafers, wafers generally need to go through processes such as balling, ball bonding, baking, pressure welding and cleaning. During this process, the wafer needs to be firmly fixed in a specific position to prevent it from shifting or shaking during the welding process, thereby ensuring the welding quality. However, existing fixtures usually use a simple mechanical clamping method, which may damage the surface of the wafer and affect the performance and reliability of the wafer.

[0004] During the welding process, a large amount of heat will accumulate on the surface of the wafer. If it cannot be effectively dissipated, the accumulation of heat may cause damage to the wafer or reduce the welding quality. At the same time, the traditional fixture does not accurately control the flow rate and pressure of the fluid under the wafer, and cannot be flexibly adjusted according to the actual welding situation, which will also affect the fixing effect of the wafer and the stability of welding.

[0005] In order to overcome the above-mentioned defects, those skilled in the art have actively conducted innovative research in order to create a wafer welding protection fixture. Summary of the invention

[0006] In view of this, the embodiment of the present application provides a wafer welding protection fixture to solve at least one problem existing in the background technology, which is used to fix the wafer during the wafer welding process, including:

[0007] The fixture body,

[0008] A fixed base, the fixed base is arranged on the fixture body, a first flow channel for conveying high-pressure fluid is arranged in the fixed base, and the first flow channel is connected to a fluid supply device;

[0009] An adjusting disk, wherein the adjusting disk is annular, the adjusting disk is disposed in the fixed base and can rotate with the first preset central axis as the rotation center, a plurality of second flow channels are disposed in the adjusting disk, the plurality of second flow channels are rotationally symmetrical with the first preset central axis, one end of the second flow channel is connected to the first flow channel, the other end of the second flow channel is a first port, and the first port is located on the circumferential surface of the adjusting disk;

[0010] A fixed disk, wherein a plurality of flow channel assemblies are arranged in the fixed disk, the plurality of flow channel assemblies are rotationally symmetrical about a first preset central axis, each group of the flow channel assemblies includes a plurality of third flow channels uniformly distributed about the first preset central axis as the rotation center, each of the third flow channels has a second port and a third port, the cross section of the second port is consistent with the cross section of the first port, the third port is located on the upper surface of the fixed disk, the cross-sectional areas of the third ports of the plurality of flow channel assemblies are distributed in a series, the cross-sectional area of ​​the third port of the third flow channel connected to the second flow channel is changed by changing the rotation angle of the adjusting disk, a high-speed fluid is sprayed to the lower surface of the wafer through the third port, the flow velocity of the fluid between the wafer and the fixed disk is increased, a pressure difference is formed between the upper and lower surfaces of the wafer, and the wafer is fixed on the upper surface of the fixed disk;

[0011] A detection component is disposed on the fixed plate, and the detection component is used to detect the temperature of the fluid flowing through the wafer;

[0012] A control component is arranged on the fixture body, and is used to adjust the air supply flow of the fluid supply device and the rotation angle of the adjustment disk according to the temperature value detected by the detection component.

[0013] Specifically, the gas supply flow rate Q of the fluid supply device is:

[0014] Wherein, A is the sum of the cross-sectional areas of the third ports of each group of flow channel components, ρ is the density of the incoming fluid, P is the pressure difference between the upper and lower surfaces of the wafer, and Δ is the correction value of the fluid flow rate at the third port.

[0015] Furthermore, a flow guide component is provided at the edge of the fixed disk, and the flow field of the fluid on the surface of the fixed disk is controlled by the flow guide component, and the wafer is fixed at the center of the fixed disk by utilizing the fluid flow field.

[0016] Furthermore, the third flow channel is an arc-shaped structure, and the diameter of the third flow channel gradually decreases from the second port to the third port.

[0017] Furthermore, the cross-sectional area of ​​the third port is determined comprehensively according to the temperature of the fluid, the type of the wafer substrate, the thickness of the wafer, the diameter of the wafer, and the temperature value of the wafer during welding.

[0018] Furthermore, the detection component includes an air intake pipeline, a buffer cavity and a temperature measurement pipeline, and the temperature measurement pipeline is connected to the air intake pipeline through the buffer cavity.

[0019] Furthermore, the adjustment disk is driven in a non-contact manner.

[0020] Furthermore, a filter assembly is provided in the air intake pipeline.

[0021] Furthermore, a first annular groove is provided in the fixed base, the first flow channel is connected to the first annular groove, a second annular groove connected to the second flow channel is provided on the side wall of the adjusting disk, the first annular groove and the second annular groove together form an annular fourth flow channel, and the fluid in the first flow channel flows into the second flow channel through the fourth flow channel.

[0022] Furthermore, the detection component also includes a temperature sensor arranged on the surface of the fixed disk.

[0023] The beneficial effects of the present invention are:

[0024] In the first aspect, the fixture of the present invention reduces the atmospheric pressure between the lower surface of the wafer and the fixture by increasing the flow rate of the fluid between the wafer and the fixture, and fixes the wafer by using the atmospheric pressure difference between the upper and lower surfaces of the wafer, that is, fixes the wafer by a non-contact clamping method, thereby avoiding contamination of the wafer during the clamping process and preventing damage to the wafer due to uneven local force on the wafer during the clamping process;

[0025] In the second aspect, the fixture of the present invention uses a high-speed fluid to purge the surface of the wafer. The high-speed fluid reduces the atmospheric pressure on the lower surface of the wafer and increases the flow of the fluid in contact with the wafer. The purpose of wafer heat dissipation is achieved through the flow of the fluid. No additional heat dissipation structure is required, which simplifies the structure of the fixture. At the same time, by controlling the flow field of the fluid, not only the stability of the wafer fixed by the packaging fixture can be improved, but also the uniformity of wafer heat dissipation can be improved.

[0026] In a third aspect, the present invention establishes a mapping relationship between the cross-sectional area of ​​the third port and the input fluid flow rate. When the cross-sectional area of ​​the third port needs to be increased to increase the total amount of fluid flowing through the lower surface of the wafer, the flow rate of the input fluid is increased synchronously, thereby ensuring that the fluid flow rate at the third port remains unchanged, so that the adsorption force of the fixture on the wafer is a constant value;

[0027] Fourthly, the adjustment disk and the fixed base of the present invention are driven in a non-contact manner. During the rotation of the adjustment disk, contaminants will not be introduced into the entire fixture due to the rotation of the driving mechanism, thereby avoiding contamination of the wafer when the fluid flows through the wafer.

[0028] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0030] Figure 1 It is a schematic diagram of the structure of the present invention;

[0031] Figure 2 is a schematic diagram of the fluid flow direction when the wafer is fixed by the fixed plate in an embodiment of the present invention;

[0032] Figure 3 It is a schematic diagram of the structure of the fixed disk of the present invention;

[0033] Figure 4 is a horizontal cross-sectional view of the adjustment disk and the fixed base when they are installed in the embodiment of the present invention;

[0034] Figure 5 is a top view of a fixed plate in an embodiment of the present invention;

[0035] Figure 6 is a vertical cross-sectional view of the adjustment disk and the fixed base when they are installed in the embodiment of the present invention;

[0036] Figure 7 It is a schematic diagram of the structure of the detection component of the present invention;

[0037] The parts in the accompanying drawings are marked as follows:

[0038] 1. Fixture body; 2. Fixed base; 201. First flow channel; 202. First annular groove; 3. Adjustment plate; 301. Second flow channel; 302. First port; 303. Second annular groove; 4. Fixed plate; 401. Flow channel assembly; 40101. Third flow channel; 40102. Second port; 40103. Third port; 402. Flow guide assembly; 5. First preset central axis rotation; 6. Detection assembly; 601. Air intake pipeline; 602. Buffer chamber; 603. Temperature measurement pipeline; 604. Filter assembly; 605. Temperature sensor; 7. Permanent magnet; 8. Electromagnet; 9. Fourth flow channel;

[0039] W. Wafer. DETAILED DESCRIPTION

[0040] The exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the specific embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present application and to fully convey the scope disclosed in the present application to those skilled in the art.

[0041] In the following description, a large number of specific details are given to provide a more thorough understanding of the present application. However, it is obvious to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features known in the art are not described; that is, all features of the actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0042] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0043] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present application necessarily has the first element, component, region, layer or part.

[0044] Spatially relative terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0045] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0046] In order to thoroughly understand the present application, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0047] The present application embodiment provides a wafer welding protection fixture, such as Figures 1 to 5 As shown, it is used to fix the wafer during the process of wafer W welding, and is characterized by: comprising:

[0048] Fixture body 1,

[0049] A fixed base 2, the fixed base is arranged on the fixture body, a first flow channel for conveying high-pressure fluid is arranged in the fixed base, and the first flow channel 201 is connected to a fluid supply device (not shown, and can be arranged at any position of the body);

[0050] An adjusting disk 3, wherein the adjusting disk is annular, is disposed in the fixed base and can rotate with the first preset central axis as the rotation center, a plurality of second flow channels 301 are disposed in the adjusting disk, and the plurality of second flow channels are rotationally symmetrical with respect to the first preset central axis 5, one end of the second flow channel is connected to the first flow channel, and the other end of the second flow channel is a first port 302, and the first port is located on the circumferential surface of the adjusting disk;

[0051] A fixed disk 4, wherein a plurality of flow channel components are arranged in the fixed disk, wherein the plurality of flow channel components 401 are rotationally symmetrical about a first preset central axis, wherein each group of the flow channel components comprises a plurality of third flow channels 40101 uniformly distributed about the first preset central axis as a rotation center, wherein each of the third flow channels has a second port 40102 and a third port 40103, wherein the cross section of the second port is consistent with the cross section of the first port, wherein the third port is located on the upper surface of the fixed disk, and the cross-sectional areas of the third ports of the plurality of flow channel components are distributed in a series, wherein the cross-sectional areas of the third ports of the third flow channels connected to the second flow channels are changed by changing the rotation angle of the adjusting disk, and a high-speed fluid is sprayed toward the lower surface of the wafer through the third port, thereby increasing the flow rate of the fluid between the wafer and the fixed disk, thereby forming a pressure difference between the upper and lower surfaces of the wafer and fixing the wafer on the upper surface of the fixed disk;

[0052] A detection component 6, disposed on the fixed plate, and used for detecting the temperature of the fluid flowing through the wafer;

[0053] A control component (not shown, which can be arranged at any position of the main body) is arranged on the fixture body, and is used to adjust the air supply flow of the fluid supply device and the rotation angle of the adjustment disk according to the temperature value detected by the detection component.

[0054] In this embodiment, the fixed base is cylindrical, the central axis of the fixed base is the first preset central axis, the center line of the first flow channel coincides with the first preset central axis, the upper surface of the fixed base is provided with a protrusion, the protrusion is cylindrical, and the lower surface of the fixed disk is provided with a recessed portion, the protrusion and the recessed portion together form a closed chamber for placing the adjusting disk, the air outlet end of the first flow channel is located on the outer circumferential surface of the protrusion, the two ends of the second flow channel are respectively located on the inner surface of the adjusting disk and the outer surface of the adjusting disk, the second port of the third flow channel is located on the inner surface of the fixed disk, the adjusting disk is sleeved on the protrusion and the inner surface of the adjusting disk is in contact with the outer circumferential surface of the protrusion, and the outer surface of the adjusting disk is in contact with the inner surface of the fixed disk, so that the fluid in the first flow channel flows into the third flow channel through the second flow channel.

[0055] The temperature range of the fluid flowing through the wafer is set according to the number of flow channel components and the cross-sectional area of ​​the third port, and the appropriate flow channel component is matched according to the temperature value of the fluid flowing through the wafer detected by the detection component. The corresponding flow channel component through which the fluid passes is adjusted to flow out by rotating the component, and the air supply flow rate of the fluid supply device is controlled according to the mapping relationship between the air supply flow rate of the fluid supply device and the cross-sectional area of ​​the third port, so as to achieve the heat dissipation of the wafer while ensuring the stability of the fixture fixing the wafer.

[0056] On the one hand, in this embodiment, a high-speed fluid is introduced into the first flow channel, and the fluid is guided by the flow channel inside the fixture and then sprayed between the wafer and the fixed plate. By increasing the flow rate of the fluid in this area, a low-pressure area is formed between the wafer box and the fixed plate, so that the wafer is adsorbed on the surface of the fixed plate. Compared with the traditional suction cup adsorption method, when the fixed plate of the method of this embodiment adsorbs the wafer, there is a fluid layer composed of a high-speed flowing fluid between the wafer and the fixed plate. Due to the existence of the fluid layer, the wafer and the fixed plate are not in direct contact, thereby effectively avoiding the contamination of the wafer by the fixed plate. Furthermore, the device of the present invention uses atmospheric pressure to fix the wafer. Compared with other grasping methods, the force on the wafer is more uniform, so it is more able to avoid wafer damage caused by uneven force in local areas of the wafer. At the same time, due to the surface averaging effect of the fluid, even if the lower surface of the wafer is uneven (there are raised electronic components or process pits) due to factors such as processing technology or the installation of other electronic components, the force on the wafer surface is evenly distributed. Therefore, using this fixture to fix the wafer can ensure that the force on the wafer surface is uniform while effectively preventing the electronic components at the bottom of the wafer from being damaged due to squeezing during the clamping process.

[0057] On the other hand, when the high-speed fluid flows through the surface of the wafer, it will exchange heat with the wafer, thereby taking away the heat generated by welding on the surface of the wafer. The high-speed fluid at the bottom of the wafer can fix the wafer while dissipating the heat of the wafer. Therefore, there is no need to set up additional wafer heat dissipation components, simplifying the structure of the entire fixture.

[0058] It can be understood that in this embodiment, the temperature of the fluid flowing through the wafer is detected, and the cross-sectional area of ​​the third port is adjusted according to the detection result to control the total amount of fluid flowing through the wafer surface, thereby controlling the heat dissipation effect on the wafer surface. At the same time, a mapping relationship between the cross-sectional area of ​​the third port and the air supply flow rate of the fluid supply device is established, and the air supply flow rate of the fluid supply device is adjusted according to the cross-sectional area of ​​the third port. While changing the cross-sectional area of ​​the third port, the fluid flow rate at the third port is ensured to remain unchanged, thereby ensuring the constancy of the force of the fixed plate on the wafer and improving the stability of the fixture.

[0059] In the above embodiment, the number of the second flow channels is 10 groups, each group of flow channel components contains 10 third flow channels, and the second flow channels correspond to the third flow channels one by one. By rotating the adjustment disk, the second flow channels are connected to the flow channel components corresponding to the third ports with different cross-sectional areas, so as to achieve the purpose of changing the total amount of fluid flowing through the wafer surface.

[0060] In a specific embodiment, the regulating disk has three groups of flow channel components, and the cross-sectional areas of the third ports of the three groups of flow channel components are A, B, and C, respectively, and A, B, and C are distributed in an arithmetic progression from small to large. Correspondingly, the detection temperature range of the detection component is divided into three intervals, that is, when the detection temperature is less than 50°C, the corresponding flow channel component has a cross-sectional area of ​​A, when it is between 50°C and 80°C, the corresponding flow channel component has a cross-sectional area of ​​B, and when the detection temperature is greater than 80°C, the corresponding flow channel component has a cross-sectional area of ​​C. At the same time, the air supply flow rate of the air supply component when connected to the flow channel component with a cross-sectional area of ​​A is set to Q1, the air supply flow rate of the air supply component when connected to the flow channel component with a cross-sectional area of ​​B is set to Q2, and the air supply flow rate of the air supply component when connected to the flow channel component with a cross-sectional area of ​​C is set to Q3.

[0061] In the above embodiment, the areas corresponding to A, B, and C are 0.001 m 2 、0.0015m 2 、0.002m 2 .

[0062] In the above embodiment, the flow rates corresponding to Q1, Q2 and Q3 are 10 L / s, 15 L / s and 20 L / s respectively.

[0063] In an optional embodiment, the third flow channel is an arc-shaped structure, and the diameter of the third flow channel gradually decreases from the second port to the third port.

[0064] It is understandable that since one section of the third flow channel is arranged on the inner surface of the fixed disk and the other end is arranged on the upper surface of the fixed disk, the plane where the second port is located is perpendicular to the plane where the third port is located. By setting the third flow channel as an arc structure, the fluid resistance of the third flow channel can be effectively reduced, and the fluid in the third flow channel is prevented from being affected by the fluid resistance and reducing the flow rate of the fluid at the third port, thereby affecting the fixing effect of the fixed disk on the wafer. On the other hand, since the flow rate of the fluid at the third port determines the fixing effect of the fixed disk on the wafer, when the flow rate of the fluid at the third port is constant, the smaller the cross-sectional area of ​​the third port, the smaller the flow rate of the fluid required to be provided by the fluid supply device. The structure of gradually reducing the diameter of the third flow channel from the second port to the third port can reduce the demand of the entire fixture on the supply capacity of the fluid supply device while reducing the fluid resistance of the third flow channel, and also reduces the consumption of fluid required to fix the wafer, which is conducive to reducing the maintenance cost of the fixture and improving the market competitiveness of the fixture.

[0065] In an optional embodiment, the fixture includes several fixed plates, and the cross-sectional areas of the third ports corresponding to the third flow channels in different fixed plates are different. When welding the wafer, the user can choose a fixed plate with different third port cross-sectional area sizes.

[0066] In an optional embodiment, the cross-sectional area of ​​the third port is determined comprehensively according to the temperature of the fluid, the type of the wafer substrate, the thickness of the wafer, the diameter of the wafer, and the temperature value of the wafer during welding.

[0067] It is understandable that when the flow rate of the fluid at the third port is constant, the cross-sectional area of ​​the third port determines the total flow rate of the fluid flowing through the bottom of the wafer per unit time. When the external influencing factors remain unchanged, the larger the cross-sectional area of ​​the third port, the larger the total flow rate of the fluid flowing through the bottom of the wafer per unit time, and the better the heat dissipation effect of the wafer.

[0068] In this embodiment, the type of the wafer substrate, the thickness of the wafer, the diameter of the wafer and the temperature of the wafer during welding determine the maximum tolerable temperature of the surface of the wafer during welding. The higher the maximum tolerable temperature of the surface of the wafer during welding, the greater the temperature difference between the wafer surface and the fluid, the better the heat dissipation effect of the fluid, and the smaller the total flow rate of the fluid flowing through the bottom of the wafer per unit time required for wafer welding, that is, the smaller the cross-sectional area of ​​the third port.

[0069] By the same token, the lower the cross-sectional area of ​​the third port is, the lower the requirement for the cross-sectional area of ​​the third port is.

[0070] Therefore, the cross-sectional area of ​​the third port is determined by the temperature of the fluid, the type of the wafer substrate, the thickness of the wafer, the diameter of the wafer, and the temperature value of the wafer during welding.

[0071] In an optional embodiment, the high-speed fluid is gas or liquid.

[0072] The specific gas can be clean and dry compressed gas, namely CDA, and the liquid can be a coolant with good electrical insulation properties such as fluorinated liquid.

[0073] In an optional embodiment, the gas supply flow rate Q of the fluid supply device is:

[0074]

[0075] Wherein, A is the sum of the cross-sectional areas of the third ports of each group of flow channel components, ρ is the density of the incoming fluid, P is the pressure difference between the upper and lower surfaces of the wafer, and Δ is the correction value of the fluid flow rate at the third port.

[0076] It should be noted that in this embodiment, the pressure difference P between the upper and lower surfaces of the wafer is determined by the weight of the wafer body and the force required to fix the wafer. Therefore, when the wafer to be welded is determined, the pressure difference P between the upper and lower surfaces of the wafer is a constant. When the type of fluid introduced is determined, the influence of other factors on the density of the fluid can be ignored, and the density ρ of the introduced fluid is also a constant. Therefore, it can be understood that the air supply flow rate Q of the fluid supply device is linearly related to the cross-sectional area of ​​the third port. At the same time, due to the resistance inside the fixture, the flow rate of the fluid at the third port will be less than the theoretical value, and the flow rate of the fluid is corrected by Δ to improve the accuracy of the air supply flow rate.

[0077] In an optional embodiment, P is 60Pa and ρ is 1.2kg / m 3 .

[0078] In an optional embodiment, the adjustment disk is driven in a non-contact manner.

[0079] It is understandable that, since both ends of the adjustment disk are open structures, there is a risk of contaminants entering the flow channel at the connection between the adjustment disk and the fixed disk and the fixed base. Therefore, if a conventional contact drive is used, in the process of driving the adjustment disk to rotate, the contaminants generated by the drive mechanism are easy to enter the fluid and cause contamination of the wafer through the contact between the fluid and the wafer. This embodiment uses a non-contact drive method to prevent the contaminants introduced by the drive mechanism from entering the fluid.

[0080] In the above embodiment, the adjusting disk is driven to rotate by a magnetic field. Specifically, by arranging a permanent magnet 7 in the adjusting disk and setting an electromagnet in the fixed base, the rotation angle of the adjusting disk is controlled by the change of the magnetic field, so that the first port is connected to the specific second port. Those skilled in the art can determine the installation positions of the electromagnet and the permanent magnet according to actual conditions, as long as the above effect can be achieved, and the installation positions of the electromagnet and the permanent magnet are not specifically limited here.

[0081] like Figure 6 As shown, in an optional embodiment, a first annular groove 202 is provided in the fixed base, the first flow channel is connected to the first annular groove, a second annular groove 303 connected to the second flow channel is provided on the side wall of the adjusting disk, the first annular groove and the second annular groove together form an annular fourth flow channel 9, and the fluid in the first flow channel flows into the second flow channel through the fourth flow channel.

[0082] It is understandable that in order to ensure the airtightness when the first flow channel, the second flow channel and the third flow channel are connected and to reduce the resistance of the fluid in the flow channel, higher requirements are placed on the processing and assembly accuracy of the flow channel, which invisibly increases the manufacturing cost of the fixture.

[0083] In this embodiment, by providing an annular fourth flow channel between the first flow channel and the second flow channel, the fourth flow channel can play the role of fluid transfer between the first flow channel and the second flow channel. No matter to which angle the adjusting disk is rotated, the second flow channel can be connected with the fourth flow channel, thereby solving the above-mentioned high processing accuracy and installation accuracy requirements.

[0084] In a more preferred embodiment, a rubber piece is provided between the first annular groove and the second annular groove, and annular holes are provided on both sides of the rubber piece to ensure the connection between the first flow channel and the second flow channel, and the air tightness of the entire fixture can be improved by adding the rubber piece.

[0085] like Figure 3 As shown, in an optional embodiment, a flow guide component 402 is provided at the edge of the fixed disk, and the flow field of the fluid on the surface of the fixed disk is controlled by the flow guide component, and the wafer is fixed at the center of the fixed disk by utilizing the fluid flow field.

[0086] It is understandable that the fixed plate can only achieve the purpose of fixing the wafer on its surface, and during the wafer welding process, the wafer may be subjected to the force on the horizontal plane. If the limiter is used to limit the movement of the wafer, there will still be problems of wafer contamination and local force. This embodiment uses the fluid overflowing between the wafer and the fixed plate to perform secondary optimization of the flow field of the fluid through the guide component, so as to achieve the purpose of limiting the movement of the wafer on the horizontal plane by using the flow field, and achieving the purpose of limiting the position of the wafer.

[0087] It should be noted that those skilled in the art can select the structure of the guide assembly according to actual conditions, as long as the above-mentioned effects can be achieved, and the structure of the guide assembly is not specifically limited herein.

[0088] like Figure 7 As shown, in an optional embodiment, the detection component includes an air intake pipeline 601, a buffer cavity 602 and a temperature measurement pipeline 603, and the temperature measurement pipeline is connected to the air intake pipeline through the buffer cavity.

[0089] In this embodiment, the fluid flowing through the wafer is pumped into the air inlet pipeline through the pump body, and stays in the buffer cavity. After its state is relatively stable, it flows into the temperature measuring pipeline for detection, and the temperature of the fluid is obtained in the temperature measuring pipeline.

[0090] It should be noted that, since the temperature of the fluid may fluctuate greatly, a buffer cavity is provided so that the temperature of the fluid in the buffer cavity is evenly distributed, thereby improving the accuracy of detection.

[0091] In an optional embodiment, the air inlet pipeline is provided with a plurality of branches, and ports of the branches are evenly distributed around the wafer.

[0092] It is understandable that the temperature of the gas flowing through the lower surface of the wafer in various directions may vary greatly. By acquiring the temperature of the gas in multiple directions and thus obtaining the average value of the fluid temperature, the accuracy of detection can be improved.

[0093] In an optional embodiment, a filter assembly 604 is provided in the air intake line.

[0094] It is understandable that since new pollutants may be generated during the welding process, these pollutants may enter the air intake line and affect the accuracy of the detection. Therefore, providing a filter component in the air intake line can filter out the pollutants in the fluid, thereby improving the accuracy of the detection and increasing the life of the detection component, thereby reducing the maintenance cost of the fixture.

[0095] It should be noted that the heat resistance temperature of the chip is 200-260℃, and generally speaking, the temperature span of the detection component is generally between 20-50℃. The temperature difference between the fluid and the chip is much larger than the temperature difference between the fluid and the filter component. The temperature loss caused by the fluid flowing through the filter component can be ignored. Therefore, even if some temperature is lost due to the fluid flowing through the filter component, it will not have a significant impact on the selection of the final flow channel component.

[0096] like Figure 5 As shown, in an optional embodiment, the detection component also includes a temperature sensor 605 disposed on the surface of the fixed disk.

[0097] In this embodiment, the stability of the wafer surface during the welding process is monitored by a temperature sensor arranged on the surface of the fixed plate, thereby achieving double protection together with the detection pipeline and improving the reliability of the overall fixture.

[0098] It should be understood that the above embodiments are exemplary and are not intended to include all possible implementations included in the claims. Various modifications and changes may be made on the basis of the above embodiments without departing from the scope of the present disclosure. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form other embodiments of the present application that may not be explicitly described. Therefore, the above embodiments only express several implementations of the present application and do not limit the scope of protection of the patent of this application.

Claims

1. A wafer welding protection fixture, used to fix the wafer during wafer welding, characterized in that: include, The fixture body, A fixed base, the fixed base is arranged on the fixture body, a first flow channel for conveying high-pressure fluid is arranged in the fixed base, and the first flow channel is connected to a fluid supply device; An adjusting disk, wherein the adjusting disk is annular, the adjusting disk is disposed in the fixed base and can rotate with the first preset central axis as the rotation center, a plurality of second flow channels are disposed in the adjusting disk, the plurality of second flow channels are rotationally symmetrical with the first preset central axis, one end of the second flow channel is connected to the first flow channel, the other end of the second flow channel is a first port, and the first port is located on the circumferential surface of the adjusting disk; A fixed disk, wherein a plurality of flow channel assemblies are arranged in the fixed disk, the plurality of flow channel assemblies are rotationally symmetrical about a first preset central axis, each group of the flow channel assemblies includes a plurality of third flow channels uniformly distributed about the first preset central axis as the rotation center, each of the third flow channels has a second port and a third port, the cross section of the second port is consistent with the cross section of the first port, the third port is located on the upper surface of the fixed disk, the cross-sectional areas of the third ports of the plurality of flow channel assemblies are distributed in a series, the cross-sectional area of ​​the third port of the third flow channel connected to the second flow channel is changed by changing the rotation angle of the adjusting disk, a high-speed fluid is sprayed to the lower surface of the wafer through the third port, the flow velocity of the fluid between the wafer and the fixed disk is increased, a pressure difference is formed between the upper and lower surfaces of the wafer, and the wafer is fixed on the upper surface of the fixed disk; A detection component is disposed on the fixed plate, and the detection component is used to detect the temperature of the fluid flowing through the wafer; A control component is arranged on the fixture body, and is used to adjust the air supply flow of the fluid supply device and the rotation angle of the adjustment disk according to the temperature value detected by the detection component.

2. The wafer welding protection fixture according to claim 1, characterized in that: The gas supply flow rate Q of the fluid supply device is: Wherein, A is the sum of the cross-sectional areas of the third ports of each group of airway components, ρ is the density of the incoming fluid, P is the pressure difference between the upper and lower surfaces of the wafer, and Δ is the correction value of the fluid flow rate at the third port.

3. The wafer welding protection fixture according to claim 1, characterized in that: The edge of the fixed disk is provided with a flow guide component, through which the flow field of the fluid on the surface of the fixed disk is controlled, and the wafer is fixed at the center of the fixed disk by utilizing the fluid flow field.

4. The wafer welding protection fixture according to claim 1, characterized in that: The third air channel is an arc-shaped structure, and the diameter of the third air channel gradually decreases from the second port to the third port.

5. The wafer welding protection fixture according to claim 1, characterized in that: The cross-sectional area of ​​the third port is determined comprehensively according to the temperature of the fluid, the type of the wafer substrate, the thickness of the wafer, the diameter of the wafer, and the temperature value of the wafer during welding.

6. The wafer welding protection jig according to claim 1, characterized in that: The detection component comprises an air intake pipeline, a buffer cavity and a temperature measurement pipeline, and the temperature measurement pipeline is connected to the air intake pipeline through the buffer cavity.

7. The wafer welding protection jig according to claim 1, characterized in that: The adjusting disk is driven in a contactless manner.

8. The wafer welding protection jig according to claim 6, characterized in that: A filter assembly is arranged in the air intake pipeline.

9. The wafer welding protection jig according to claim 1, characterized in that: A first annular groove is provided in the fixed base, and the first flow channel is connected to the first annular groove. A second annular groove connected to the second flow channel is provided on the side wall of the adjusting disk. The first annular groove and the second annular groove together form an annular fourth flow channel. The fluid in the first flow channel flows into the second flow channel through the fourth flow channel.

10. The wafer welding protection jig according to claim 1, characterized in that: The detection component also includes a temperature sensor arranged on the surface of the fixed disk.

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