Light-emitting assembly, preparation method thereof and display panel

Abstract

The invention discloses a light-emitting assembly, a preparation method thereof and a display panel, and relates to the technical field of display. The laminating directions of film layers in a first light-emitting diode and a second light-emitting diode included in a light-emitting unit in the light-emitting assembly are opposite, so that the first light-emitting diode and the second light-emitting diode are conveniently connected in series through a first connecting electrode. Moreover, the two light-emitting diodes of the light-emitting unit are connected in series, so that the voltage of the light-emitting unit can be improved, the driving current provided for the light-emitting unit can be further reduced, and the power consumption of the display panel is prevented from being too high. Moreover, the power consumption of the display panel is low, so that the temperature in the display panel is not too high, and the reliability of the display panel can be ensured.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting component and a preparation method thereof, and a display panel. Background Art

[0002] Compared with liquid crystal display (LCD) display technology and organic light-emitting diode (OLED) display technology, light-emitting diode (LED) display technology has the characteristics of high brightness, low voltage requirement, long service life, high color reproduction and strong resistance to external interference, and is widely used in many fields.

[0003] In related technologies, as the pixel density of display products increases, the size of LED chips also gradually decreases (referred to as Micro LED display technology). Since the size of LED chips in Micro LED display products is small, their luminous efficiency is also low. In order to ensure the normal display of Micro LED display products, it is necessary to increase the brightness by increasing the driving current of the LED chips.

[0004] However, the higher the driving current of the LED chip, the higher the power consumption of the display product, which in turn leads to higher temperature of the display product and lower reliability of the display product. Summary of the invention

[0005] The present application provides a light-emitting component and a method for preparing the same, and a display panel, which can solve the problem of low reliability of display products in related technologies. The technical solution is as follows:

[0006] In one aspect, a light emitting assembly is provided, comprising a substrate and a light emitting unit located on the substrate, wherein the light emitting unit comprises a first light emitting diode and a second light emitting diode;

[0007] The first light-emitting diode comprises a first doped layer, a first light-emitting layer and a second doped layer sequentially stacked in a direction away from the substrate, and the second light-emitting diode comprises a third doped layer, a second light-emitting layer and a fourth doped layer sequentially stacked in a direction away from the substrate;

[0008] The first doping layer and the fourth doping layer have the same doping type, the second doping layer and the third doping layer have the same doping type, and the first light-emitting layer and the second light-emitting layer have the same luminescent color;

[0009] The light emitting unit further includes a first connecting electrode, and the second doping layer and the fourth doping layer are electrically connected via the first connecting electrode.

[0010] Optionally, the light emitting assembly includes a first filling portion located on the substrate and arranged on the same side as the light emitting unit, and the first filling portion is at least located in a gap between the first light emitting diode and the second light emitting diode;

[0011] Wherein, the distance between the surface of the first filling portion away from the substrate and the substrate is greater than the maximum value of the distance between the surface of the second doping layer close to the substrate and the substrate, and the distance between the surface of the fourth doping layer close to the substrate and the substrate;

[0012] The first connecting electrode is located at a side of the first filling portion away from the substrate.

[0013] Optionally, a distance from a surface of the first filling portion away from the substrate to the substrate is greater than a distance from a surface of the first light-emitting diode away from the substrate to the substrate, the first filling portion includes a first via hole, an orthographic projection of the first via hole on the substrate overlaps with an orthographic projection of the first light-emitting diode on the substrate, and the first connecting electrode is electrically connected to the light-emitting diode through the first via hole; and / or,

[0014] The distance between the surface of the first filling portion on the side away from the substrate and the substrate is greater than the distance between the surface of the second light-emitting diode on the side away from the substrate and the substrate. The first filling portion includes a second via hole, and the orthographic projection of the second via hole on the substrate overlaps with the orthographic projection of the second light-emitting diode on the substrate. The first connecting electrode is electrically connected to the light-emitting diode through the second via hole.

[0015] Optionally, the thickness of the first filling portion is equal to the distance between a surface of the first filling portion on a side away from the substrate and the substrate.

[0016] Optionally, the fourth doping layer is located on a side of the first light-emitting diode away from the substrate;

[0017] The fourth doped layer includes a first target area and a second target area, the orthographic projection of the first light-emitting diode on the substrate overlaps with the orthographic projection of the first target area on the substrate, and the second light-emitting layer and the third doped layer are both stacked with the fourth doped layer in the second target area;

[0018] The first connection electrode is located between the fourth doping layer and the second doping layer, and is electrically connected to the first target region and the second doping layer respectively.

[0019] Optionally, the light-emitting unit further includes an insulating layer located between the second light-emitting unit and the substrate, and the insulating layer is bonded to the second light-emitting unit;

[0020] The insulating layer includes a third via hole, an orthographic projection of the third via hole on the substrate overlaps with an orthographic projection of the fourth doped layer on the substrate, and the fourth doped layer is electrically connected to the second doped layer via the first connecting electrode passing through the third via hole;

[0021] The insulating layer includes a fourth via hole, the orthographic projection of the fourth via hole on the substrate overlaps with the orthographic projection of the third doped layer on the substrate, the substrate includes a driving circuit, and the third doped layer is electrically connected to the driving circuit through a second connecting electrode passing through the fourth via hole.

[0022] Optionally, the third doped layer includes a first surface facing the substrate, a second surface away from the substrate, and a first side surface located between the first surface and the second surface; the second light-emitting layer includes a third surface facing the substrate, a fourth surface away from the substrate, and a second side surface located between the third surface and the fourth surface; the fourth doped layer includes a fifth surface facing the substrate, a sixth surface away from the substrate, and a third side surface located between the fifth surface and the sixth surface;

[0023] The fifth surface includes a first partial surface located in the first target area and a second partial surface located in the second target area, the first partial surface is close to the sixth surface relative to the second partial surface, the third side surface includes a first sub-side surface and a second sub-side surface, the first sub-side surface is farther away from the first light-emitting diode relative to the second sub-side surface, the second sub-side surface includes a third partial surface connecting the first partial surface and the second partial surface, and a fourth partial surface connecting the first partial surface and the sixth surface, the first side surface includes a third sub-side surface and a fourth sub-side surface, the third sub-side surface is farther away from the first light-emitting diode relative to the fourth sub-side surface, the second side surface also includes a fifth sub-side surface and a sixth sub-side surface, the fifth sub-side surface is farther away from the first light-emitting diode relative to the sixth sub-side surface;

[0024] The insulating layer at least covers the first surface, the fourth sub-side surface, the sixth sub-side surface, the third partial surface, and the first partial surface.

[0025] Optionally, the insulating layer also covers the third sub-side surface, the fifth sub-side surface, the first sub-side surface and the fourth partial surface.

[0026] Optionally, the sixth surface is a rough surface; or, the sixth surface has a two-dimensional photonic crystal structure, and the material of the two-dimensional photonic crystal structure is the same as that of the fourth doping layer.

[0027] Optionally, the first light-emitting diode includes a first electrode located between the first doping layer and the substrate, and the first electrode is electrically connected to a driving circuit on the substrate; and / or,

[0028] The second light emitting diode includes a second electrode located between the third doping layer and the substrate, and the second electrode is electrically connected to a driving circuit on the substrate.

[0029] Optionally, the light emitting component includes n light emitting diodes;

[0030] The first light-emitting diode is one of n light-emitting diodes, the first light-emitting diode comprises a first electrode located between the first doping layer and the substrate, the first electrode is electrically connected to a driving circuit on the substrate; and / or,

[0031] The second light emitting diode is another one of the n light emitting diodes. The second light emitting diode includes a second electrode located between the third doping layer and the substrate. The second electrode is electrically connected to a driving circuit on the substrate.

[0032] Optionally, the driving circuit has a first signal electrode and a second signal electrode;

[0033] The first signal electrode is electrically connected to the first electrode, and the second signal electrode is electrically connected to the second electrode.

[0034] Optionally, the first doping layer and the fourth doping layer are made of the same material, and the second doping layer and the third doping layer are made of the same material;

[0035] The first light-emitting layer and the second light-emitting layer are made of the same material.

[0036] Optionally, the light-emitting component includes a light-emitting unit group, the light-emitting unit group includes a first light-emitting unit and a second light-emitting unit, and the light-emitting color of the first light-emitting unit is different from the light-emitting color of the second light-emitting unit.

[0037] Optionally, the light-emitting component includes a light-emitting unit group, the light-emitting unit group includes a first light-emitting unit and a second light-emitting unit, and the light-emitting color of the first light-emitting unit is the same as the light-emitting color of the second light-emitting unit;

[0038] The light-emitting component includes a first color conversion portion, which is located on a side of the first light-emitting unit away from the substrate, and an orthographic projection of the first color conversion portion on the substrate overlaps with an orthographic projection of the first light-emitting unit on the substrate.

[0039] Optionally, the light emitting assembly further comprises a retaining wall structure surrounding the light emitting unit in a direction parallel to the extension surface of the substrate;

[0040] The distance from the side of the retaining wall structure away from the substrate to the substrate is greater than or equal to the distance from the side of the first color conversion portion away from the substrate to the substrate.

[0041] Optionally, the retaining wall structure includes a first sub-retaining wall and a second sub-retaining wall which are stacked, the first sub-retaining wall being closer to the base than the second sub-retaining wall, and the distance from the side of the second sub-retaining wall away from the base to the base being greater than or equal to the distance from the side of the first color conversion portion away from the base to the base.

[0042] Optionally, the light emitting assembly includes a first filling portion located on the substrate and arranged on the same side as the light emitting unit, and the first filling portion is at least located in a gap between the first light emitting diode and the second light emitting diode;

[0043] The distance between the side of the first filling portion away from the base and the base is greater than the distance between the side of the first sub-retaining wall away from the base and the base, so that part of the first filling portion is located on the side of the first sub-retaining wall away from the base, and part of the first filling portion is located between the first sub-retaining wall and the second sub-retaining wall;

[0044] The first filling portion and the second sub-blocking wall form a receiving space, and the first color conversion portion is located in the receiving space.

[0045] Optionally, the light-emitting component includes a first filling portion located on the substrate and arranged on the same side as the light-emitting unit, the first filling portion is at least located in a gap between the first light-emitting diode and the second light-emitting diode, and the first color conversion portion is located on a side of the first filling portion away from the substrate;

[0046] The material of the first filling part is one of a transparent material, a reflective material and a color conversion material, wherein the reflective material is used to reflect or scatter the light emitted by the light emitting unit, and the color conversion material converts the first wavelength light emitted by the light emitting unit into a second wavelength light.

[0047] Optionally, the first filling portion is used to convert light into a first color, and the first color conversion portion is used to convert light into a second color;

[0048] The first color is the same as the second color, or the wavelength of light of the first color is smaller than the wavelength of light of the second color.

[0049] Optionally, the light-emitting component further includes: an encapsulation layer;

[0050] The encapsulation layer is located on a side of the first color conversion portion away from the first light-emitting unit.

[0051] Optionally, the light-emitting component further includes a retaining wall structure surrounding the light-emitting unit in a direction parallel to the extension surface of the base; the retaining wall structure and the base form a receiving space for receiving the light-emitting unit, and the first filling portion fills the receiving space;

[0052] The material of the first filling part is one of a transparent material, a reflective material and a color conversion material, wherein the reflective material is used to reflect or scatter the light emitted by the light emitting unit, and the color conversion material converts the first wavelength light emitted by the light emitting unit into the second wavelength light.

[0053] On the other hand, a method for preparing a light-emitting component is provided, characterized in that the method comprises:

[0054] Obtaining a substrate;

[0055] Transferring a first light-emitting diode included in the light-emitting unit onto the substrate, wherein the first light-emitting diode includes a first doping layer, a first light-emitting layer, and a second doping layer stacked in sequence in a direction away from the substrate;

[0056] The second light-emitting diode included in the light-emitting unit is transferred onto the substrate, and the second light-emitting diode includes a third doping layer, a second light-emitting layer and a fourth doping layer which are sequentially stacked in a direction away from the substrate; wherein the first doping layer and the fourth doping layer have the same doping type, the second doping layer and the third doping layer have the same doping type, and the first light-emitting layer and the second light-emitting layer have the same luminous color;

[0057] The second doping layer and the fourth doping layer are electrically connected via a first connecting electrode.

[0058] Optionally, before electrically connecting the second doped layer and the fourth doped layer through the first connecting electrode, the method further includes:

[0059] forming a first filling portion, wherein the first filling portion is at least located in a gap between the first light-emitting diode and the second light-emitting diode, and the first filling portion exposes the second doping layer and the fourth doping layer;

[0060] The second doping layer and the fourth doping layer are electrically connected via a first connecting electrode, comprising:

[0061] A first connecting electrode is formed on a side of the first filling portion away from the substrate, and the first connecting electrode is electrically connected to the second doping layer and the fourth doping layer.

[0062] Optionally, obtaining the first light emitting diode includes:

[0063] forming a first doping layer, a first light-emitting layer and a second doping layer in sequence on the first substrate;

[0064] Transferring the first doped layer, the first light-emitting layer and the second doped layer from the first substrate to the second substrate, so that the second doped layer, the first light-emitting layer and the first doped layer are stacked in sequence in a direction away from the second substrate;

[0065] forming a first electrode on a side of the first doped layer away from the second substrate;

[0066] Transferring the first electrode, the first doped layer, the first light-emitting layer and the second doped layer from the second substrate to a third substrate, so that the first electrode, the first doped layer, the first light-emitting layer and the second doped layer are stacked in sequence in a direction away from the third substrate;

[0067] A third electrode is formed on a side of the second doping layer away from the third substrate.

[0068] Optionally, obtaining a second light emitting diode includes:

[0069] forming a fourth doping layer, a second light-emitting layer and a third doping layer in sequence on the first substrate;

[0070] Transferring the fourth doped layer, the second light-emitting layer and the third doped layer from the first substrate to the second substrate, so that the third doped layer, the second light-emitting layer and the fourth doped layer are stacked in sequence in a direction away from the second substrate;

[0071] forming a fourth electrode on a side of the fourth doped layer away from the second substrate;

[0072] Transferring the fourth electrode, the fourth doped layer, the second light-emitting layer and the third doped layer from the second substrate to the third substrate, so that the fourth electrode, the fourth doped layer, the second light-emitting layer and the third doped layer are stacked in sequence in a direction away from the third substrate;

[0073] A second electrode is formed on a side of the third doping layer away from the third substrate.

[0074] Optionally, obtaining the second light-emitting diode and the first connecting electrode includes:

[0075] A fourth doping layer, a second light-emitting layer and a third doping layer are sequentially formed on the first substrate, wherein the fourth doping layer includes a first target region and a second target region, and the second light-emitting layer and the third doping layer are both stacked with the fourth doping layer in the second target region;

[0076] forming an insulating layer on a side of the fourth doped layer away from the first substrate, the insulating layer comprising a third via hole, and an orthographic projection of the third via hole on the substrate overlaps with an orthographic projection of the fourth doped layer on the substrate;

[0077] A first connecting electrode is formed on a side of the insulating layer away from the first substrate, and the first connecting electrode is electrically connected to the fourth doping layer through the third via hole.

[0078] In yet another aspect, a display panel is provided, the display panel comprising a display backplane, and a plurality of light-emitting components as described in the above aspects located on one side of the display backplane;

[0079] Wherein, the display backplane is used to drive the light-emitting units in the light-emitting components to emit light.

[0080] The beneficial effects of the technical solution provided by this application include at least:

[0081] The present application provides a light-emitting component and a method for preparing the same, and a display panel. The stacking directions of the film layers in the first light-emitting diode and the second light-emitting diode included in the light-emitting unit of the light-emitting component are opposite, so it is convenient to connect the first light-emitting diode and the second light-emitting diode in series through the first connecting electrode. In addition, since the two light-emitting diodes of the light-emitting unit are connected in series, the voltage of the light-emitting unit can be increased, and then the driving current provided to the light-emitting unit can be reduced, thereby avoiding excessive power consumption of the display panel. In addition, since the power consumption of the display panel is low, it will not cause the temperature in the display panel to be too high, and the reliability of the display panel can be guaranteed. BRIEF DESCRIPTION OF THE DRAWINGS

[0082] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0083] Figure 1 is a structural schematic diagram of a light-emitting unit in the related art;

[0084] Figure 2 It is a structural schematic diagram of a light-emitting component provided in an embodiment of the present application;

[0085] Figure 3 is a schematic structural diagram of another light-emitting component provided in an embodiment of the present application;

[0086] Figure 4 is a partial structural schematic diagram of a second light emitting diode provided in an embodiment of the present application;

[0087] Figure 5 is a structural schematic diagram of another light-emitting component provided in an embodiment of the present application;

[0088] Figure 6 is a structural schematic diagram of another light-emitting component provided in an embodiment of the present application;

[0089] Figure 7 is a structural schematic diagram of another light-emitting component provided in an embodiment of the present application;

[0090] Figure 8 is a schematic structural diagram of another light-emitting component provided in an embodiment of the present application;

[0091] Fig. 9 is a structural schematic diagram of another light-emitting component provided in an embodiment of the present application;

[0092] Fig.10 is a structural schematic diagram of another light-emitting component provided in an embodiment of the present application;

[0093] Fig.11 is a schematic structural diagram of another light-emitting component provided in an embodiment of the present application;

[0094] Fig.12 is a schematic structural diagram of another light-emitting component provided in an embodiment of the present application;

[0095] Fig.13 is a structural schematic diagram of another light-emitting component provided in an embodiment of the present application;

[0096] Fig.14 is a structural schematic diagram of another light-emitting component provided in an embodiment of the present application;

[0097] Fig.15 is a schematic structural diagram of another light-emitting component provided in an embodiment of the present application;

[0098] Fig.16 is a schematic structural diagram of another light-emitting component provided in an embodiment of the present application;

[0099] Fig.17 is a flow chart of a method for preparing a light-emitting component provided in an embodiment of the present application;

[0100] Fig.18 is a flow chart of a method for preparing a first light-emitting diode and a second light-emitting diode provided in an embodiment of the present application;

[0101] Fig.19 It is a schematic diagram of forming a first doped film, a first light-emitting film and a second doped film provided in an embodiment of the present application;

[0102] Fig. 20 It is a schematic diagram of forming a first doping layer, a first light-emitting layer and a second doping layer, and forming a third doping layer, a second light-emitting layer and a fourth doping layer provided in an embodiment of the present application;

[0103] Fig.21 is a schematic diagram of a transfer to a second substrate provided in an embodiment of the present application;

[0104] Fig. 22 is a schematic diagram of peeling off a first substrate provided in an embodiment of the present application;

[0105] Fig.23 is a schematic diagram of forming a first electrode and a fourth electrode provided in an embodiment of the present application;

[0106] Fig.24 is a schematic diagram of a transfer to a third substrate provided in an embodiment of the present application;

[0107] Fig.25 is a schematic diagram of removing the second substrate provided in an embodiment of the present application;

[0108] Fig.26 is a schematic diagram of forming a second electrode and a third electrode provided in an embodiment of the present application;

[0109] Fig. 27 is a schematic diagram of transferring a first light-emitting diode and a second light-emitting diode onto a substrate provided by an embodiment of the present application;

[0110] Fig.28 is a flow chart of another method for preparing a light-emitting component provided in an embodiment of the present application;

[0111] Fig.29 is a schematic diagram of forming a first filling portion provided in an embodiment of the present application;

[0112] Fig.30 is another schematic diagram of forming a first filling portion provided in an embodiment of the present application;

[0113] Fig.31 is a schematic diagram of forming a retaining wall structure and a first filling part provided in an embodiment of the present application;

[0114] Fig.32 is a schematic diagram of forming a first connecting electrode provided by an embodiment of the present application;

[0115] Fig.33 is another schematic diagram of forming a first connecting electrode provided in an embodiment of the present application;

[0116] Fig.34 is another schematic diagram of forming a first connecting electrode provided by an embodiment of the present application;

[0117] Fig.35 is a schematic diagram of forming a first color conversion portion provided by an embodiment of the present application;

[0118] Fig.36 is another schematic diagram of forming a first color conversion portion provided by an embodiment of the present application;

[0119] Fig.37 is another schematic diagram of forming a first color conversion portion provided by an embodiment of the present application;

[0120] Fig.38 is a flow chart of a preparation method for forming a second light-emitting diode provided in an embodiment of the present application;

[0121] Fig.39 It is a schematic diagram of forming a third doped film, a second light-emitting film and a fourth doped film provided in an embodiment of the present application;

[0122] Fig.40 This is a schematic diagram of forming a fourth doping layer, a second light-emitting layer and a third doping layer provided in an embodiment of the present application;

[0123] Fig.41 is a schematic diagram of forming an insulating layer provided in an embodiment of the present application;

[0124] Fig.42 is a schematic diagram of forming a first connecting electrode and a second connecting electrode provided in an embodiment of the present application;

[0125] Fig.43 It is a schematic diagram of a display panel provided in an embodiment of the present application. DETAILED DESCRIPTION

[0126] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below with reference to the accompanying drawings.

[0127] In the related art, in order to reduce the driving current of LED chips, it is considered to use LED chips connected in series to realize a high-voltage structure light-emitting unit. The high-voltage structure light-emitting unit may refer to a light-emitting unit formed by combining multiple LED chips in series. By introducing a high-voltage structure light-emitting unit, the driving current can be greatly reduced, thereby reducing the power consumption of the display product.

[0128] refer to Figure 1 In the related art, the light-emitting unit of the high-voltage structure realizes the series connection of LED chips by means of bridge electrodes. However, due to the small size of the Micro LED chip, the substrate needs to be removed when transferring it to the substrate (the substrate includes the driving circuit). Therefore, there is no supporting structure to support the bridge electrode, and the bridge electrode is easy to break. In other words, currently there is only the idea of ​​connecting LED chips in series to reduce the driving current, but there is no specific method to truly realize this idea.

[0129] in, Figure 1 In the embodiment, the substrate is a sapphire substrate, the buffer layer is u-type gallium nitride (u-GaN) (i.e., undoped GaN), the first doped layer is N-type gallium nitride (N-GaN), and the second doped layer is P-type gallium nitride (P-GaN). The first electrode is connected to the first doped layer of the LED chip on the right, and the first electrode is an N-type electrode; the second electrode is connected to the second doped layer of the LED chip on the left, and the second electrode is a P-type electrode. The second doped layer of the LED chip on the right and the first doped layer of the chip on the left are connected by a bridging electrode passing through a via in the insulating structure (two LED chips are connected in series). The insulating structure can be a passivation layer (PVX).

[0130] Figure 2 Schematic diagram of a light emitting component structure provided by an embodiment of the present application. Figure 2 It can be seen that the light emitting assembly 10 includes a substrate 101 and a light emitting unit 102 located on the substrate 101. The light emitting unit 102 includes a first light emitting diode 1021 and a second light emitting diode 1022.

[0131] refer to Figure 2 The first light-emitting diode 1021 includes a first doped layer 10211, a first light-emitting layer 10212, and a second doped layer 10213, which are located on the substrate 101 and stacked in sequence in a direction away from the substrate 101. The second light-emitting diode 1022 includes a third doped layer 10221, a second light-emitting layer 10222, and a fourth doped layer 10223, which are located on the substrate 101 and stacked in sequence in a direction away from the substrate 101.

[0132] The first doping layer 10211 and the fourth doping layer 10223 have the same doping type, and the second doping layer 10213 and the third doping layer 10221 have the same doping type. Specifically, the first doping layer 10211 and the fourth doping layer 10223 may both be N-type doped, and the second doping layer 10213 and the third doping layer 10221 may both be P-type doped. Alternatively, the first doping layer 10211 and the fourth doping layer 10223 may both be P-type doped, and the second doping layer 10213 and the third doping layer 10221 may both be N-type doped.

[0133] Continue to refer Figure 2 The first light-emitting layer 10212 and the second light-emitting layer 10222 emit the same light-emitting color, that is, the first light-emitting diode 1021 and the second light-emitting diode 1022 can be two light-emitting diodes with opposite stacking directions and the same light-emitting color.

[0134] Continue to refer Figure 2 The light emitting unit 102 further includes a first connecting electrode 1023 , and the second doping layer 10213 and the fourth doping layer 10223 are electrically connected via the first connecting electrode 1023 .

[0135] It should be noted that the electrical connection between the two structures (or between the devices) described in the embodiments of the present application does not include the case where other light-emitting diodes are connected in series between the two structures (or between the devices). Therefore, the light-emitting unit 102 also includes a first connecting electrode 1023, and the second doping layer 10213 and the fourth doping layer 10223 are electrically connected through the first connecting electrode 1023, indicating that the first light-emitting diode 1021 and the second light-emitting diode 1022 are two light-emitting diodes directly connected in series through the first connecting electrode 1023. Specifically, in the embodiments of the present application, the first light-emitting diode 1021 and the second light-emitting diode 1022 are connected through the first connecting electrode 1023, which may mean that the related structure in the first light-emitting diode 1021 and the second light-emitting diode 1022 are directly connected through the first connecting electrode 1023. That is, the first light-emitting diode 1021 and the second light-emitting diode 1022 are not indirectly connected by connecting multiple connecting electrodes through other light-emitting diodes.

[0136] Since the first doping layer 10211 in the first light-emitting diode 1021 and the fourth doping layer 10223 in the second light-emitting diode 1022 have the same doping type, and the second doping layer 10213 and the third doping layer 10221 in the first light-emitting diode 1021 have the same doping type, it can be seen from the stacking relationship of each film layer in the first light-emitting diode 1021 and the second light-emitting diode 1022 that the stacking directions in the first light-emitting diode 1021 and the second light-emitting diode 1022 are opposite. Therefore, the distance between the second doping layer 10213 and the fourth doping layer 10223 in the direction perpendicular to the bearing surface of the substrate 101 can be made closer, and it is convenient to realize the series connection of the first light-emitting diode 1021 and the second light-emitting diode 1022 by designing the first connecting electrode 1023 to connect the second doping layer 10213 and the fourth doping layer 10223.

[0137] In the embodiment of the present application, the solution in which the first light emitting diode 1021 and the second light emitting diode 1022 are connected in series, compared with the solution in which the light emitting unit 102 includes one light emitting diode, can reduce the driving current provided to the light emitting unit 102 while ensuring the normal display of the display panel, thereby reducing the power consumption of the display panel. In addition, since the power consumption of the display panel is reduced, the temperature in the display panel will not be too high, and the reliability of the display panel can be guaranteed.

[0138] In summary, the embodiment of the present application provides a light-emitting component, in which the stacking directions of the film layers in the first light-emitting diode and the second light-emitting diode included in the light-emitting unit of the light-emitting component are opposite, so it is convenient to connect the first light-emitting diode and the second light-emitting diode in series through the first connecting electrode. In addition, since the two light-emitting diodes of the light-emitting unit are connected in series, the voltage of the light-emitting unit can be increased, and then the driving current provided to the light-emitting unit can be reduced, thereby avoiding excessive power consumption of the display panel. In addition, since the power consumption of the display panel is low, it will not cause the temperature in the display panel to be too high, and the reliability of the display panel can be guaranteed.

[0139] As an optional implementation, refer to Figure 2 The light emitting assembly 10 includes a first filling portion 103 disposed on the substrate 101 and on the same side as the light emitting unit 102. The first filling portion 103 is at least located in the gap between the first light emitting diode 1021 and the second light emitting diode 1022. Figure 2 The light emitting assembly in FIG. 1 shows a light emitting unit 102 , and the first filling portion 103 is located in the gap between the first light emitting diode 1021 and the second light emitting diode 1022 in the light emitting unit 102 .

[0140] The first filling portion 103 located in the gap between the first light-emitting diode 1021 and the second light-emitting diode 1022 at least covers the first light-emitting layer 10212 and the second light-emitting layer 10222. That is, the distance h3 from the surface of the first filling portion 103 located in the gap between the first light-emitting diode 1021 and the second light-emitting diode 1022 on the side away from the substrate 101 to the substrate 101 is greater than the maximum distance between the first distance h1 and the second distance h2, that is, h3>max(h1, h2). The first distance h1 refers to the distance from the surface of the second doping layer 10213 on the side close to the substrate 101 to the substrate 101, or may refer to the distance from the surface of the first light-emitting layer 10212 on the side away from the substrate 101 to the substrate 101. The second distance h2 refers to the distance from the surface of the fourth doping layer 10223 on the side close to the substrate 101 to the substrate 101, or may refer to the distance from the surface of the second light-emitting layer 10222 on the side away from the substrate 101 to the substrate 101.

[0141] refer to Figure 2 The first connecting electrode 1023 is located on a side of the first filling portion 103 away from the substrate 101, so that the first filling portion 103 provides support for the first connecting electrode 1023 to prevent the first connecting electrode 1023 from breaking, thereby ensuring the reliability of the series connection of the first light-emitting diode 1021 and the second light-emitting diode 1022.

[0142] In the examples of this application, refer to Figure 2 , the distance between the surface of the first filling portion 103 away from the substrate 101 and the substrate 101 is greater than the distance between the surface of the first light emitting diode 1021 away from the substrate 101 and the substrate 101. In order to achieve the connection between the first connection electrode 1023 and the first light emitting diode 1021, refer to Figure 2 The first filling portion 103 includes a first via hole k1. The orthographic projection of the first via hole k1 on the substrate 101 overlaps with the orthographic projection of the first light emitting diode 1021 on the substrate 101, so that the first connection electrode 1023 is electrically connected to the first light emitting diode 1021 through the first via hole k1.

[0143] And, reference Figure 2 , the distance between the surface of the first filling portion 103 away from the substrate 101 and the substrate 101 is greater than the distance between the surface of the second light emitting diode 1022 away from the substrate 101 and the substrate 101. In order to achieve the connection between the first connection electrode 1023 and the second light emitting diode 1022, refer to Figure 2 The first filling portion 103 includes a second via hole k2. The orthographic projection of the second via hole k2 on the substrate 101 overlaps with the orthographic projection of the second light emitting diode 1022 on the substrate 101, so that the first connection electrode 1023 is electrically connected to the second light emitting diode 1022 through the second via hole k2.

[0144] It should be noted that the distance between the surface of the first filling portion 103 away from the substrate 101 and the substrate 101 may be only greater than the distance between the surface of the first light-emitting diode 1021 away from the substrate 101 and the substrate 101, and not greater than the distance between the surface of the second light-emitting diode 1022 away from the substrate 101 and the substrate 101. In this case, the first filling portion 103 may be designed with only the first via k1 for connecting the first light-emitting diode 1021 and the first connection electrode 1023, the second light-emitting diode 1022 may be exposed by the first filling portion 103, and the first connection electrode 1023 may be directly connected to the exposed second light-emitting diode 1022.

[0145] Alternatively, the distance from the surface of the first filling portion 103 away from the substrate 101 to the substrate 101 may be only greater than the distance from the surface of the second light-emitting diode 1022 away from the substrate 101 to the substrate 101, and not greater than the distance from the surface of the first light-emitting diode 1021 away from the substrate 101 to the substrate 101. In this case, the first filling portion 103 may be designed with only the second via k2 for connecting the second light-emitting diode 1022 and the first connection electrode 1023, the first light-emitting diode 1021 may be exposed to the outside by the first filling portion 103, and the first connection electrode 1023 may be directly connected to the exposed first light-emitting diode 1021.

[0146] refer to Figure 2 It can be seen that the thickness of the first filling portion 103 is equal to the distance h3 between the surface of the first filling portion 103 away from the substrate 101 and the substrate 101. That is, the first filling portion 103 can be filled directly from the upper surface of the substrate 101, thereby ensuring that the gap between the first light-emitting diode 1021 and the second light-emitting diode 1022 in the light-emitting unit 102 is completely filled, ensuring the performance of the two light-emitting diodes.

[0147] As another optional implementation, refer to Figure 3, the fourth doping layer 10223 is located on the side of the first light-emitting diode 1021 away from the substrate 101. The fourth doping layer 10223 includes a first target area a1 and a second target area a2. The orthographic projection of the first light-emitting diode 1021 on the substrate 101 overlaps with the orthographic projection of the first target area a1 on the substrate 101. The first target area a1 may be a setting area where the second light-emitting diode 1022 is reserved for the first light-emitting diode 1021. The second light-emitting layer 10222 and the third doping layer 10221 are both stacked with the fourth doping layer 10223 in the second target area a2. The second target area a2 may be a stacking area where the second light-emitting diode 1022 is the third doping layer 10221, the second light-emitting layer 10222, and the fourth doping layer 10223. That is, the second light-emitting diode 1022 may be similar to an inverted stepped structure.

[0148] refer to Figure 3 The first connection electrode 1023 is located between the fourth doping layer 10223 and the second doping layer 10213, and is electrically connected to the second target area a2 of the fourth doping layer 10223 and the second doping layer 10213 respectively.

[0149] refer to Figure 3 The light emitting unit 102 further includes an insulating layer 104 between the second light emitting diode 1022 and the substrate 101, and the insulating layer 104 is arranged in close contact with the second light emitting diode 1022. The close contact may refer to that one side of the insulating layer 104 is in direct contact with the relevant structure in the second light emitting diode 1022.

[0150] Optionally, the material of the insulating layer 104 may include silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), titanium oxide (TiO 2 ) and aluminum oxide (Al 2 O 3 ). For example, the material of the insulating layer 104 can be one of the above four materials, or a combination of any two of the above four materials, or a combination of any three of the above four materials, or a combination of the above four materials.

[0151] The insulating layer 104 includes a third via hole k3. The orthographic projection of the third via hole k3 on the substrate 101 overlaps with the orthographic projection of the fourth doped layer 10223 on the substrate 101. The fourth doped layer 10223 is connected to the first connection electrode 1023 passing through the third via hole k3, and the first connection electrode 1023 can be directly contacted and connected with the second doped layer 10213 of the first light-emitting diode 1021. That is, the fourth doped layer 10223 is electrically connected to the second doped layer 10213 through the first connection electrode 1023 passing through the third via hole k3.

[0152] In addition, the insulating layer 104 further includes a fourth via hole k4. The orthographic projection of the fourth via hole k4 on the substrate 101 overlaps with the orthographic projection of the third doped layer 10221 on the substrate 101. The substrate 101 includes a driving circuit, and the third doped layer 10221 is connected to the second connecting electrode 1024 passing through the fourth via hole k4, and the second connecting electrode 1024 and the driving circuit are directly contacted and connected. That is, the third doped layer 10221 is electrically connected to the driving circuit through the second connecting electrode 1024 passing through the fourth via hole k4.

[0153] Figure 4 Schematic diagram of a partial structure of a second light emitting diode provided in an embodiment of the present application. Figure 4 The third doped layer 10221 includes a first surface m1 facing the substrate 101, a second surface m2 away from the substrate 101, and a first side surface n1 located between the first surface m1 and the second surface m2. The second light-emitting layer 10222 includes a third surface m3 facing the substrate 101, a fourth surface m4 away from the substrate 101, and a second side surface n2 located between the third surface m3 and the fourth surface m4. The fourth doped layer 10223 includes a fifth surface m5 facing the substrate 101, a sixth surface m6 away from the substrate 101, and a third side surface n3 located between the fifth surface m5 and the sixth surface m6.

[0154] Among them, reference Figure 4, the first partial surface m51 located in the first target area a1 and the second partial surface m52 located in the second target area a2 of the fifth surface m5 are not coplanar, and the first partial surface m51 is closer to the sixth surface m6 than the second partial surface m52. The third side surface n3 includes a first sub-side surface n31 and a second sub-side surface n32, wherein the first sub-side surface n31 is farther away from the first light-emitting diode 1021 than the second sub-side surface n32. The first sub-side surface n31 can be a flat side surface, and the second sub-side surface n32 includes a third partial surface n321 connecting the first partial surface m51 and the second partial surface m52, and a fourth partial surface n322 connecting the first partial surface m51 and the sixth surface m6. In addition, the third partial surface n321 can form a flat side surface with the fourth sub-side surface n12 in the first side surface n1 and the sixth sub-side surface n22 in the second side surface n2. In addition, the first side surface n1 also includes a third sub-side surface n11, and the second side surface n2 also includes a fifth sub-side surface n21.

[0155] Combination Figure 3 and Figure 4 It can be seen that the insulating layer 104 can at least cover the first surface m1, the fourth sub-side surface n12, the sixth sub-side surface n22, the third partial surface n321 and the first partial surface m51. That is, the insulating layer 104 can cover the surface of the second light-emitting diode 1022 between the first light-emitting diode 1021 and the second light-emitting diode 1022. Thus, the insulating layer 104 can insulate the film layer of the second light-emitting diode 1022 from the film layer of the first light-emitting diode 1021, and prevent the film layers of the second light-emitting diode 1022 and the first light-emitting diode 1021 from being short-circuited.

[0156] For further reference, Figure 4 The exposed surface of the second light emitting diode 1022 includes: the first surface m1, the first side surface n1, the second side surface n2, the third side surface n3, the first partial surface m51 and the sixth surface m6. Figure 5 The insulating layer 104 may cover all the surfaces exposed to the outside except the sixth surface m6 to ensure the film insulation effect of the second light-emitting diode 1022 and the first light-emitting diode 1021. Figure 5 In addition to covering the first surface m1, the fourth sub-side surface n12, the sixth sub-side surface n22, the third partial surface n321 and the first partial surface m51, the insulating layer 104 also covers the third sub-side surface n11, the fifth sub-side surface n21, the first sub-side surface n31 and the fourth partial surface n322.

[0157] In the embodiment of the present application, since the light of the light emitting unit 102 is emitted from the sixth surface m6, in order to improve the optical effect of the light emitting unit 102, some special processing may be performed on the sixth surface m6.

[0158] Solution 1 (roughening solution) is to perform etching or dry etching on the surface of the fourth doping layer 10223 away from the substrate 101, so as to change the flat surface into an irregular rough surface. Figure 6 , the sixth surface m6 of the fourth doping layer 10223 is a rough surface.

[0159] Solution 2 (photonic crystal solution) is to perform nanoimprinting on the surface of the fourth doped layer 10223 away from the substrate 101 to form a periodic two-dimensional photonic crystal structure. Figure 7 , the sixth surface m6 of the fourth doping layer 10223 has a two-dimensional photonic crystal structure. Moreover, since the two-dimensional photonic crystal structure is obtained by processing the fourth doping layer 10223, the material of the two-dimensional photonic crystal structure is the same as the material of the fourth doping layer 10223. Among them, the two-dimensional photonic crystal structure can improve the light extraction efficiency on the one hand, and on the other hand, it can also improve the light emission ratio in the vertical direction, converge the beam angle, and improve the display effect on the front side.

[0160] In the examples of this application, refer to Figure 8 The first light emitting diode 1021 includes a first electrode 10214 located between the first doping layer 10211 and the substrate 101. The first electrode 10214 is electrically connected to the driving circuit on the substrate 101. And / or, the second light emitting diode 1022 includes a second electrode 10224 located between the third doping layer 10221 and the substrate 101. The second electrode 10224 is electrically connected to the driving circuit on the substrate 101.

[0161] In the case where the light emitting unit 102 includes only the first light emitting diode 1021 and the second light emitting diode 1022, and does not include other light emitting diodes, the first light emitting diode 1021 and the second light emitting diode 1022 may be electrically connected via a first connecting electrode 1023. In addition, the first electrode 10214 included in the first light emitting diode 1021 and the second electrode 10224 included in the second light emitting diode 1022 are both connected to the second electrode 10224.

[0162] Alternatively, the light-emitting unit 102 includes n light-emitting diodes connected in series, and the first light-emitting diode 1021 is one of the n light-emitting diodes, and the second light-emitting diode 1022 is another of the n light-emitting diodes. That is, the first light-emitting diode 1021 and the second light-emitting diode 1022 are two different light-emitting diodes among the n light-emitting diodes, and the first light-emitting diode 1021 and the second light-emitting diode 1022 are electrically connected through the first connecting electrode 1023. In this case, one of the first light-emitting diode 1021 and the second light-emitting diode 1022 can be electrically connected to the driving circuit.

[0163] Optionally, if the remaining n-2 light-emitting diodes except the first light-emitting diode 1021 and the second light-emitting diode 1022 among the n light-emitting diodes are directly or indirectly connected to the first light-emitting diode 1021, the second light-emitting diode 1022 is electrically connected to the driving circuit. If the remaining n-2 light-emitting diodes except the first light-emitting diode 1021 and the second light-emitting diode 1022 among the n light-emitting diodes are directly or indirectly connected to the second light-emitting diode 1022, the first light-emitting diode 1021 is electrically connected to the driving circuit.

[0164] Optional, reference Figure 8 and Fig. 9 The driving circuit (not shown in the figure) has a first signal electrode G1 and a second signal electrode G2, the first signal electrode G1 is electrically connected to the first electrode 10214, and the second signal electrode G2 is electrically connected to the second electrode 10224. Thus, the driving circuit can provide a first signal to the first electrode 10214 through the first signal electrode G1, and provide a second signal to the second electrode 10224 through the second signal electrode G2.

[0165] refer to Figure 8 , the orthographic projection of the first electrode 10214 on the substrate 101 is located within the orthographic projection of the first doped layer 10211 on the substrate 101, and the area of ​​the orthographic projection of the first electrode 10214 on the substrate 101 is smaller than the area of ​​the orthographic projection of the first doped layer 10211 on the substrate 101. The orthographic projection of the second electrode 10224 on the substrate 101 is located within the orthographic projection of the third doped layer 10221 on the substrate 101, and the area of ​​the orthographic projection of the second electrode 10224 on the substrate 101 is smaller than the area of ​​the orthographic projection of the third doped layer 10221 on the substrate 101. That is, the distance between the first electrode 10214 and the second electrode 10224 in the direction parallel to the bearing surface of the substrate 101 can be made greater than the distance between the first doped layer 10211 and the third doped layer 10221 in the direction parallel to the bearing surface of the substrate 101. In this way, the first electrode 10214 and the second electrode 10224 can be prevented from being too close to each other or short-circuited.

[0166] For the first optional implementation method mentioned above, Figure 8In the light-emitting unit 102 shown, the first light-emitting diode 1021 further includes a third electrode 10215 located on the side of the second doping layer 10213 away from the substrate 101, and the second light-emitting diode 1022 further includes a fourth electrode 10225 located on the side of the fourth doping layer 10223 away from the substrate 101. The third electrode 10215 is directly in contact with the second doping layer 10213, and the fourth electrode 10225 is directly in contact with the fourth doping layer 10223. The second doping layer 10213 and the fourth doping layer 10223 are electrically connected through the first connection electrode 1023, which may mean that the third electrode 10215 directly in contact with the second doping layer 10213 and the fourth electrode 10225 directly in contact with the fourth doping layer 10223 are directly electrically connected through the first connection electrode 1023.

[0167] refer to Figure 8 , the orthographic projection of the third electrode 10215 on the substrate 101 is located within the orthographic projection of the second doped layer 10213 on the substrate 101, and the area of ​​the orthographic projection of the third electrode 10215 on the substrate 101 is smaller than the area of ​​the orthographic projection of the second doped layer 10213 on the substrate 101. The orthographic projection of the fourth electrode 10225 on the substrate 101 is located within the orthographic projection of the fourth doped layer 10223 on the substrate 101, and the area of ​​the orthographic projection of the second electrode 10224 on the substrate 101 is smaller than the area of ​​the orthographic projection of the fourth doped layer 10223 on the substrate 101. That is, the distance between the third electrode 10215 and the fourth electrode 10225 in the direction parallel to the bearing surface of the substrate 101 can be made greater than the distance between the second doped layer 10213 and the fourth doped layer 10223 in the direction parallel to the bearing surface of the substrate 101.

[0168] In the embodiment of the present application, for the first light-emitting diode 1021, the first electrode 10214 and the third electrode 10215 are respectively located on both sides of the stacked first doping layer 10211, the first light-emitting layer 10212 and the second doping layer 10213. The first light-emitting diode 1021 of this structure can be called a vertical structure light-emitting diode (referred to as a vertical LED). For the second light-emitting diode 1022, the second electrode 10224 and the fourth electrode 10225 are respectively located on both sides of the stacked third doping layer 10221, the second light-emitting layer 10222 and the fourth doping layer 10223. The second light-emitting diode 1022 of this structure can also be called a vertical structure light-emitting diode (referred to as a vertical LED). That is, in Fig. 9 The solution described is a design solution of two vertical LEDs.

[0169] For the second optional implementation method mentioned above, Fig. 9In the light-emitting unit 102 shown, the second connection electrode 1024 and the second electrode 10224 can be the same electrode. Or it can be interpreted that the second connection electrode 1024 can be another name for the second electrode 10224. Of course, the second connection electrode 1024 and the second electrode 10224 can also be two different electrodes. In this case, the second connection electrode 1024 can be stacked with the second electrode 10224 between the third doping layer 10221 and the substrate 101, and the second connection electrode 1024 and the second electrode 10224 are directly in contact and connected. Similarly, the first connection electrode 1023 and the third electrode 10215 can be the same electrode. Or it can be interpreted that the third electrode 10215 is another name for the first connection electrode 1023. Of course, the first connecting electrode 1024 and the third electrode 10215 can also be two different electrodes. In this case, the first connecting electrode 1023 and the third electrode 10215 can be stacked between the second doping layer 10213 and the fourth doping layer 10223, and the first connecting electrode 1023 and the third electrode 10215 are directly contacted and connected.

[0170] In the embodiment of the present application, for the first light-emitting diode 1021, the first electrode 10214 and the third electrode 10215 are respectively located on both sides of the stacked first doping layer 10211, the first light-emitting layer 10212 and the second doping layer 10213. The first light-emitting diode 1021 of this structure can be called a vertical structure light-emitting diode (referred to as a vertical LED). For the second light-emitting diode 1022, the fourth doping layer 10223 has a first target area a1 and a second target area a2 (referred to as a flip-chip LED). That is, in Fig.10 The solution described is a design solution of vertical LED+flip-chip LED.

[0171] In the embodiment of the present application, by introducing vertical LEDs, the current transmission uniformity of the chip is improved, the series resistance is reduced, and the light-emitting area is effectively increased. In addition, a more symmetrical light pattern can be obtained, which improves the display effect under different viewing angles. Under the condition of the same light-emitting area, the size of the vertical LED is only about half of that of the flip-chip LED, and the thickness of the vertical LED is also significantly reduced compared to the thickness of the flip-chip LED, so the cost of the LED can be effectively reduced, thereby reducing the cost of the overall product.

[0172] In the embodiment of the present application, the first doping layer 10211 and the fourth doping layer 10223 are made of the same material, and the second doping layer 10213 and the third doping layer 10221 are made of the same material.

[0173] Optionally, the material of the first doping layer 10211 and the fourth doping layer 10223 may be N-type gallium nitride (GaN), denoted as N-GaN. The material of the second doping layer 10213 and the third doping layer 10221 may be P-type gallium nitride (GaN), denoted as P-GaN.

[0174] In addition, the materials of the first light-emitting layer 10212 and the second light-emitting layer 10222 are the same, so that the light-emitting color of the first light-emitting diode 1021 and the light-emitting color of the second light-emitting diode 1022 included in the light-emitting unit 102 are the same.

[0175] In the embodiment of the present application, as a possible situation, refer to Fig.10 , the light-emitting component 10 includes a light-emitting unit group Z. The light-emitting unit group Z includes at least a first light-emitting unit 102a and a second light-emitting unit 102b. The light-emitting color of the first light-emitting unit 102a is different from the light-emitting color of the second light-emitting unit 102b. Further, the light-emitting unit group Z also includes a third light-emitting unit 102c, and the light-emitting color of the third light-emitting unit 102c is different from the light-emitting color of the first light-emitting unit 102a and the light-emitting color of the second light-emitting unit 102b. That is, the light-emitting unit group Z can be displayed in multiple colors by making the light-emitting colors of the multiple light-emitting units 102 in the light-emitting unit group Z different.

[0176] Optionally, the light color of the first light emitting unit 102a may be red (red, R), that is, the light colors of the first light emitting diode 1021 and the second light emitting diode 1022 included in the first light emitting unit 102a are both red. The light color of the second light emitting unit 102b may be blue (blue, B), that is, the light colors of the first light emitting diode 1021 and the second light emitting diode 1022 included in the second light emitting unit 102b are both blue. The light color of the third light emitting unit 102c may be green (green, G), that is, the light colors of the first light emitting diode 1021 and the second light emitting diode 1022 included in the third light emitting unit 102c are both green.

[0177] As another possible situation, the light emitting assembly 10 includes a light emitting unit group Z. The light emitting unit group Z includes at least a first light emitting unit 102a and a second light emitting unit 102b. The light emitting color of the first light emitting unit 102a is the same as the light emitting color of the second light emitting unit 102b. That is, the light emitting colors of the two light emitting units 102 in the light emitting unit group Z are the same.

[0178] Optionally, the luminous color of the first light-emitting unit 102a and the luminous color of the second light-emitting unit 102b are both blue, that is, the luminous color of the first light-emitting diode 1021 and the second light-emitting diode 1022 included in the first light-emitting unit 102a and the luminous color of the first light-emitting diode 1021 and the second light-emitting diode 1022 included in the second light-emitting unit 102b are both blue.

[0179] In this case, refer to Fig.11 In order to realize the multi-color display of the light-emitting unit group Z, the light-emitting component 10 may include a first color conversion unit 105. The first color conversion unit 105 is located on the side of the first light-emitting unit 102a away from the substrate 101, and the orthographic projection of the first color conversion unit 105 on the substrate 101 overlaps with the orthographic projection of the first light-emitting unit 102a on the substrate 101. The first color conversion unit 105 can be used to convert the blue light emitted by the first light-emitting unit 102a into red light.

[0180] For further reference, Fig.11 , the light-emitting unit group Z also includes a third light-emitting unit 102c, and the light-emitting color of the third light-emitting unit 102c is the same as the light-emitting color of the first light-emitting unit 102a and the light-emitting color of the second light-emitting unit 102b. That is, the light-emitting colors of the first light-emitting diode 1021 and the second light-emitting diode 1022 included in the third light-emitting unit 102c are both blue. Further, the light-emitting component 10 may include a second color conversion unit 106. The second color conversion unit 106 is located on a side of the third light-emitting unit 102c away from the substrate 101, and the orthographic projection of the second color conversion unit 106 on the substrate 101 overlaps with the orthographic projection of the third light-emitting unit 102c on the substrate 101. The second color conversion unit 106 can be used to convert the blue light emitted by the third light-emitting unit 102c into green light.

[0181] The light-emitting component 10 may further include a light-transmitting portion 107, which is located on a side of the second light-emitting unit 102b away from the substrate 101. The orthographic projection of the light-transmitting portion 107 on the substrate 101 overlaps with the orthographic projection of the second light-emitting unit 102b on the substrate 101. The light-transmitting portion 107 may be used to transmit the blue light emitted by the second light-emitting unit 102b.

[0182] Optionally, the thicknesses of the first color conversion portion 105, the second color conversion portion 106 and the light-transmitting portion 107 may be the same. Of course, the thicknesses of the first color conversion portion 105, the second color conversion portion 106 and the light-transmitting portion 107 may be slightly different due to process reasons.

[0183] In addition, the first color conversion unit 105 and the second color conversion unit 106 both include quantum dots, which can convert the color of light. Optionally, the quantum dots included in the first color conversion unit 105 can be red quantum dots, and the quantum dots included in the second color conversion unit 106 can be green quantum dots.

[0184] refer to Fig.12 , the light-emitting component 10 also includes a retaining wall structure 108 surrounding the light-emitting unit 102 in a direction parallel to the extension surface (bearing surface) of the substrate 101. The distance d1 from the side of the retaining wall structure 108 away from the substrate 101 to the substrate 101 is greater than or equal to the distance d2 from the side of the first color conversion portion 105 away from the substrate 101 to the substrate 101. In this way, the retaining wall structure 108 can completely separate adjacent light-emitting units 102 to avoid mutual influence between adjacent light-emitting units 102. For the sake of convenience, Fig.12 Only the first light emitting unit 102a and the second light emitting unit 102b are illustrated.

[0185] Generally, due to the thickness of the retaining wall structure 108, it is difficult to complete the preparation in one process. Fig.13 , the retaining wall structure 108 includes a first sub-retaining wall 1081 and a second sub-retaining wall 1082 which are stacked. That is, the retaining wall structure 108 can form two stacked sub-retaining walls through two processes. The first sub-retaining wall 1081 is closer to the substrate 101 than the second sub-retaining wall 1082. Among them, the side of the retaining wall structure 108 away from the substrate 101 can refer to the side of the second sub-retaining wall 1082 away from the substrate 101. Further, the distance d1 from the side of the retaining wall structure 108 away from the substrate 101 to the substrate 101 is greater than or equal to the distance from the side of the first color conversion part 105 away from the substrate 101 to the substrate 101, which can mean: the distance from the side of the second sub-retaining wall 1082 away from the substrate 101 to the substrate 101 is greater than or equal to the distance from the side of the first color conversion part 105 away from the substrate 101 to the substrate 101.

[0186] refer to Fig.13 , the distance d3 from the side of the first filling part 103 away from the substrate 101 to the substrate 101 is greater than the distance d4 from the side of the first sub-retaining wall 1081 away from the substrate 101 to the substrate 101. Thus, part of the first filling part 103 can be located on the side of the first sub-retaining wall 1081 away from the substrate 101, and part of the first filling part 103 can be located between the first sub-retaining wall 1081 and the second sub-retaining wall 1082. With this design, the first filling part 103 can act as a flat layer, providing a flat condition for the preparation of the second sub-retaining wall 1082.

[0187] refer to Fig.13, the first filling portion 103 and the second sub-blocking wall 1082 form a receiving space. For example, the first color conversion portion 105 can be located in the receiving space formed by the first filling portion 103 and the second sub-blocking wall 1082 filling the gap between the first light-emitting diode 1021 and the second light-emitting diode 1022 in the first light-emitting unit 102a. The second color conversion portion 106 can be located in the receiving space formed by the first filling portion 103 and the second sub-blocking wall 1082 filling the gap between the first light-emitting diode 1021 and the second light-emitting diode 1022 in the third light-emitting unit 102c. The light-transmitting portion 107 can be located in the receiving space formed by the first filling portion 103 and the second sub-blocking wall 1082 filling the gap between the first light-emitting diode 1021 and the second light-emitting diode 1022 in the second light-emitting unit 102b.

[0188] Optionally, the material of the first filling part 103 can be one of a transparent material, a reflective material and a color conversion material. Among them, the transparent material is used to transmit the light emitted by the light-emitting unit 102. For example, there may be scattering particles in the transparent material for scattering the light. The scattering particles can be, for example, inorganic micro-nano scale particles (such as titanium dioxide particles, etc.). The reflective material is used to reflect or scatter the light emitted by the light-emitting unit 102. Specifically, the reflective material can be used to reflect or scatter the light emitted by the light-emitting unit 102 to the side of the light-emitting unit 102 away from the substrate 101 (i.e., the light-emitting side). Optionally, the reflective material can be a white material.

[0189] When the material of the first filling part 103 is a color conversion material, the first filling part 103 is used to convert light into a first color. The first color conversion part 105 is used to convert the first wavelength light emitted by the light emitting unit 102 into a second wavelength light. The first wavelength and the second wavelength are different.

[0190] Optionally, the first filling part 103 is used to convert light into a first color. The first color conversion part 105 is used to convert light into a second color.

[0191] As a possible scenario, refer to Fig.14 , the first color after the color conversion material of the first filling part 103 filled in the first light-emitting diode 1021 and the second light-emitting diode 1022 in the first light-emitting unit 102a converts the light to the same color as the second color after the color conversion material of the first color conversion part 105 of the first light-emitting unit 102a on the side away from the substrate 101 converts the light. For example, both can be red. In addition, the first color after the color conversion material of the first filling part 103 filled in the first light-emitting diode 1021 and the second light-emitting diode 1022 in the third light-emitting unit 102c converts the light to the same color as the third color after the color conversion material of the second color conversion part 106 of the third light-emitting unit 102c on the side away from the substrate 101 converts the light. For example, both can be green. Fig.14 For the sake of convenience, only the first light emitting unit 102a and the third light emitting unit 102c are shown. The same filling pattern of the first color conversion part 105 or the second color conversion part 106 and the first filling part 103 indicates that the color conversion materials of the two are the same.

[0192] Optionally, when the material of the first filling portion 103 is a color conversion material, the color conversion material of the first filling portion 103 filled in the first light-emitting diode 1021 and the second light-emitting diode 1022 in the first light-emitting unit 102a, and the color conversion material of the first color conversion portion 105 on the side of the first light-emitting unit 102a away from the substrate 101 can be the same material. For example, the color conversion material of the first filling portion 103 and the color conversion material of the first color conversion portion 105 are both red color conversion materials. The red color conversion material can be used to convert the blue light emitted by the first light-emitting unit 102a into red light.

[0193] Furthermore, the color conversion material of the first filling portion 103 filled with the first light emitting diode 1021 and the second light emitting diode 1022 in the third light emitting unit 102c and the color conversion material of the second color conversion portion 106 of the third light emitting unit 102c on the side away from the substrate 101 can be the same material. For example, the color conversion material of the first filling portion 103 and the color conversion material of the second color conversion portion 106 are both green color conversion materials. The green color conversion material can be used to convert the blue light emitted by the third light emitting unit 102c into green light.

[0194] As another possible scenario, refer to Fig.15 and Fig.16 The wavelength of the first color light converted by the color conversion material of the first filling part 103 filled in the first light emitting diode 1021 and the second light emitting diode 1022 in the first light emitting unit 102a can be smaller than the wavelength of the second color light converted by the color conversion material of the first color conversion part 105 on the side of the first light emitting unit 102a away from the substrate 101. Fig.15 and Fig.16 For the sake of convenience, only the first light emitting unit 102a and the third light emitting unit 102c are shown. The same filling pattern of the first color conversion part 105 (or the second color conversion part 106) and the first filling part 103 indicates that the color conversion materials of the two are the same, and different filling patterns indicate that the color conversion materials of the two are different.

[0195] For example, the first color is green, and the second color is red. The first filling part 103 can convert the blue light emitted by the first light emitting unit 102a into green light, and the first color conversion part 105 is used to convert the green light into red light.

[0196] refer to Figures 11 to 16It can be seen that the light emitting component 10 further includes: an encapsulation layer 109. The encapsulation layer 109 is located on a side of the first color conversion portion 105 away from the first light emitting unit 102a. Correspondingly, the encapsulation layer 109 is located on a side of the second color conversion portion 106 away from the third light emitting unit 102c, and on a side of the light transmitting portion 107 away from the second light emitting unit 102b.

[0197] Since the color conversion material is usually easily affected by the external environment, the encapsulation layer 109 can be designed to protect the first color conversion part 105 and the second color conversion part 106 to prevent the first color conversion part 105 and the second color conversion part 106 from being disturbed by other factors.

[0198] In summary, the embodiment of the present application provides a light-emitting component, in which the stacking directions of the film layers in the first light-emitting diode and the second light-emitting diode included in the light-emitting unit of the light-emitting component are opposite, so it is convenient to connect the first light-emitting diode and the second light-emitting diode in series through the first connecting electrode. In addition, since the two light-emitting diodes of the light-emitting unit are connected in series, the voltage of the light-emitting unit can be increased, and then the driving current provided to the light-emitting unit can be reduced, thereby avoiding excessive power consumption of the display panel. In addition, since the power consumption of the display panel is low, it will not cause the temperature in the display panel to be too high, and the reliability of the display panel can be guaranteed.

[0199] Fig.17 1 is a flow chart of a method for preparing a light-emitting component provided in an embodiment of the present application. Fig.17 , the method comprising:

[0200] Step S101, obtaining a substrate.

[0201] Step S102: transferring the first light emitting diode included in the light emitting unit to the substrate.

[0202] In the embodiment of the present application, after the first light-emitting diode 1021 is transferred to the substrate 101, the first doping layer 10211, the first light-emitting layer 10212 and the second doping layer 10213 included in the first light-emitting diode 1021 are all located on the substrate 101 and are stacked sequentially in a direction away from the substrate 101.

[0203] Step S103: transferring the second light emitting diode included in the light emitting unit to the substrate.

[0204] In the embodiment of the present application, after the second light-emitting diode 1022 is transferred to the substrate 101, the third doping layer 10221, the second light-emitting layer 10222 and the fourth doping layer 10223 included in the second light-emitting diode 1022 are all located on the substrate 101 and are stacked sequentially in a direction away from the substrate 101.

[0205] The first doping layer 10211 and the fourth doping layer 10223 have the same doping type, and the second doping layer 10213 and the third doping layer 10221 have the same doping type. The first light-emitting layer 10212 and the second light-emitting layer 10222 have the same luminescent color.

[0206] Step S104: electrically connecting the second doping layer and the fourth doping layer via a first connecting electrode.

[0207] In the embodiment of the present application, since the first doping layer 10211 in the first light-emitting diode 1021 and the fourth doping layer 10223 in the second light-emitting diode 1022 have the same doping type, and the second doping layer 10213 in the first light-emitting diode 1021 and the third doping layer 10221 have the same doping type, it can be seen based on the stacking relationship of each film layer in the first light-emitting diode 1021 and the second light-emitting diode 1022 that the stacking directions in the first light-emitting diode 1021 and the second light-emitting diode 1022 are opposite. As a result, the distance between the second doping layer 10213 and the fourth doping layer 10223 in the direction perpendicular to the bearing surface of the substrate 101 can be made closer, and it is convenient to connect the second doping layer 10213 and the fourth doping layer 10223 by designing the first connecting electrode 1023 to realize the series connection of the first light-emitting diode 1021 and the second light-emitting diode 1022.

[0208] Compared with the solution that the light emitting unit 102 includes one light emitting diode, the solution that the first light emitting diode 1021 and the second light emitting diode 1022 are connected in series can reduce the driving current provided to the light emitting unit 102, thereby reducing the power consumption of the display panel, while ensuring the normal display of the display panel. In addition, since the power consumption of the display panel is reduced, the temperature of the display panel will not be too high, and the reliability of the display panel can be guaranteed.

[0209] In summary, the embodiment of the present application provides a method for preparing a light-emitting component, wherein the stacking directions of the film layers in the first light-emitting diode and the second light-emitting diode included in the light-emitting unit of the light-emitting component prepared by the method are opposite, so it is convenient to connect the first light-emitting diode and the second light-emitting diode in series through the first connecting electrode. In addition, since the two light-emitting diodes of the light-emitting unit are connected in series, the voltage of the light-emitting unit can be increased, and then the driving current provided to the light-emitting unit can be reduced, thereby avoiding excessive power consumption of the display panel. In addition, since the power consumption of the display panel is low, it will not cause the temperature in the display panel to be too high, and the reliability of the display panel can be guaranteed.

[0210] As an optional implementation, taking the solution in which the light emitting component includes two vertical LEDs as an example, refer to Fig.18The preparation process of the first light emitting diode 1021 in step S102 and the second light emitting diode 1022 in step S103 includes:

[0211] Step 201: forming a first doped thin film, a first light-emitting thin film and a second doped thin film in sequence on a first substrate.

[0212] In the examples of this application, refer to Fig.19 , the first doped film b1, the first light-emitting film b2 and the second doped film b3 are stacked in sequence in a direction away from the first substrate. Optionally, the material of the first substrate is sapphire, and the material of the first doped film b1 and the second doped film b3 can be gallium nitride (GaN), then the light-emitting color of the light-emitting diode prepared by the following method is green or blue. The material of the first substrate is gallium arsenide (GaAs), the first doped film b1 and the second doped film b3 are gallium phosphide (GaP), then the light-emitting color of the light-emitting diode prepared by the following method is red. The following embodiments of the present application are mainly described by taking the light-emitting color of the light-emitting diode as green or blue as an example.

[0213] Step S202, etching the first doped film, the first light-emitting film and the second doped film to obtain a first doped layer, a first light-emitting layer and a second doped layer stacked in sequence, and a fourth doped layer, a second light-emitting layer and a third doped layer stacked in sequence.

[0214] refer to Fig. 20 , the etching process is used to etch the area between the light-emitting diodes in the first doped film b1, the first light-emitting film b2 and the second doped film b3. Among them, since the first doped layer 10211 and the fourth doped layer 10223 are obtained by etching the first doped film b1, the materials of the first doped layer 10211 and the fourth doped layer 10223 are the same as the material of the first doped film b1, for example, N-type gallium nitride (GaN). Since the first light-emitting layer 10212 and the second light-emitting layer 10222 are obtained by etching the first light-emitting film b2, the light-emitting colors of the first light-emitting layer 10212 and the second light-emitting layer 10222 are the same. Since the second doped layer 10213 and the third doped layer 10221 are obtained by etching the second doped film b3, the materials of the second doped layer 10213 and the third doped layer 10221 are the same as the material of the second doped film b3, for example, P-type gallium nitride (GaN).

[0215] Step S203, transferring the first doped layer, the first light-emitting layer and the second doped layer stacked in sequence, and the fourth doped layer, the second light-emitting layer and the third doped layer stacked in sequence from the first substrate to the second substrate.

[0216] In the examples of this application, refer to Fig.21 , the first doped layer 10211, the first light-emitting layer 10212 and the second doped layer 10213 stacked in sequence, and the fourth doped layer 10223, the second light-emitting layer 10222 and the third doped layer 10221 stacked in sequence can be temporarily bonded to the second substrate by means of temporary bonding. The material of the second substrate can be a transparent hard sheet such as a sapphire substrate and glass. Moreover, after these film layers are transferred to the second substrate, the second doped layer 10213, the first light-emitting layer 10212 and the first doped layer 10211 are stacked in sequence in a direction away from the second substrate, and the third doped layer 10221, the second light-emitting layer 10222 and the fourth doped layer 10223 are stacked in sequence in a direction away from the second substrate.

[0217] Temporary bonding may refer to bonding the second doping layer 10213 and the third doping layer 10221 to the second substrate through adhesive. The adhesive type and thickness are not particularly limited, and adhesives that can be used for the next step of transfer are usually selected, such as UV (ultraviolet) debonding adhesives, PDMS (organic silicon material) adhesives, laser foaming adhesives, etc.

[0218] In addition, reference Fig. 22 After the temporary bonding is completed, the first substrate needs to be peeled off from the first doping layer 10211 and the fourth doping layer 10223 by a peeling process. That is, the structure finally obtained in step S203 is as follows: Fig. 22 As shown in the figure where the arrow points.

[0219] Step S204 , forming a first electrode on a side of the first doped layer away from the second substrate, and forming a fourth electrode on a side of the fourth doped layer away from the second substrate.

[0220] In the examples of this application, refer to Fig.23 , the first electrode 10214 and the fourth electrode 10225 can be formed by evaporation process. The materials of the first electrode 10214 and the fourth electrode 10225 can be transparent electrodes to ensure the light extraction effect of the light emitting diode. The material of the transparent electrode can be nano silver wire, indium tin oxide (Indium Tin Oxide, ITO) and aluminum zinc oxide (Aluminum Zinc Oxide, AZO) AZO and other materials. The structure finally obtained in step S204 is as follows Fig.23 shown.

[0221] Step S205: transferring the first electrode, the first doped layer, the first light-emitting layer and the second doped layer, and the fourth electrode, the fourth doped layer, the second light-emitting layer and the third doped layer from the second substrate to the third substrate.

[0222] In the examples of this application, refer to Fig.24, the first electrode 10214, the first doping layer 10211, the first light-emitting layer 10212 and the second doping layer 10213 stacked in sequence, and the fourth electrode 10225, the fourth doping layer 10223, the second light-emitting layer 10222 and the third doping layer 10221 stacked in sequence are temporarily bonded to the third substrate by means of temporary bonding. The adhesive on the third substrate can be the same as the adhesive on the second substrate, or the adhesive on the third substrate can be selected from other adhesives that can be used for subsequent mass transfer.

[0223] Furthermore, after transferring these film layers to the third substrate, the first electrode 10214, the first doping layer 10211, the first light-emitting layer 10212 and the second doping layer 10213 are stacked sequentially in a direction away from the second substrate, and the fourth electrode 10225, the fourth doping layer 10223, the second light-emitting layer 10222 and the third doping layer 10221 are stacked sequentially in a direction away from the second substrate.

[0224] In addition, reference Fig.25 After the temporary bonding is completed, the second substrate needs to be removed from the second doping layer 10213 and the third doping layer 10221 by debonding. That is, the structure finally obtained in step S205 is as follows: Fig.25 shown.

[0225] Step S206 , forming a third electrode on a side of the second doped layer away from the third substrate, and forming a second electrode on a side of the third doped layer away from the third substrate.

[0226] In the examples of this application, refer to Fig.26 The third electrode 10215 and the second electrode 10224 can be formed by evaporation deposition. The third electrode 10215 and the second electrode 10224 can be made of transparent electrodes to ensure the light extraction effect of the light emitting diode. The transparent electrode can be made of nano silver wire, ITO, AZO and other materials. The structure finally obtained in step S206 is as follows: Fig.26 shown.

[0227] For the first optional implementation, if the first light emitting unit 102a, the second light emitting unit 102b and the third light emitting unit 102c of the light emitting unit group Z in the finally prepared light emitting component 10 have different light emitting colors, for example, the light emitting color of the first light emitting unit 102a is red, the light emitting color of the second light emitting unit 102b is blue, and the light emitting color of the third light emitting unit 102c is green.

[0228] In this case, the above steps S201 to S206 need to be used to prepare the first light-emitting unit 102a, the second light-emitting unit 102b and the third light-emitting unit 102c respectively.

[0229] Transferring the first light-emitting diode 1021 included in the light-emitting unit 102 to the substrate 101 in step S102 includes three transfer processes: 1. Transferring the first light-emitting diode 1021 in the first light-emitting unit 102a to the substrate 101; 2. Transferring the first light-emitting diode 1021 in the second light-emitting unit 102b to the substrate 101; 3. Transferring the first light-emitting diode 1021 in the third light-emitting unit 102c to the substrate 101.

[0230] Transferring the second light-emitting diode 1022 included in the light-emitting unit 102 to the substrate 101 in step S103 includes three transfer processes: 1. Transferring the second light-emitting diode 1022 in the first light-emitting unit 102a to the substrate 101; 2. Transferring the second light-emitting diode 1022 in the second light-emitting unit 102b to the substrate 101; 3. Transferring the second light-emitting diode 1022 in the third light-emitting unit 102c to the substrate 101.

[0231] That is, when the light-emitting colors of the first light-emitting unit 102 a , the second light-emitting unit 102 b and the third light-emitting unit 102 c of the light-emitting unit group Z are different from each other, a total of six transfer processes are required.

[0232] Taking the transfer process of the first light-emitting diode 1021 and the second light-emitting diode 1022 of the first light-emitting unit 102a as an example, since in the structure obtained in the above step S206, all light-emitting diodes are N-type gallium nitride, light-emitting layer and P-type gallium nitride stacked in the direction away from the third substrate, when the light-emitting diode obtained in step S206 is directly transferred from the third substrate to the substrate 101, P-type gallium nitride, light-emitting layer and N-type gallium nitride stacked in sequence in the direction away from the substrate 101 can be obtained. That is, the light-emitting diode directly transferred to the substrate 101 can be the second light-emitting diode 1022. The second electrode 10224, the third doped layer 10221 (P-type gallium nitride), the second light-emitting layer 10222, the fourth doped layer 10223 (N-type gallium nitride) and the fourth electrode 10225 in the second light-emitting diode 1022 are stacked in sequence in the direction away from the substrate 101.

[0233] Furthermore, the structure of the light-emitting diode on the third substrate can be transferred to the fourth substrate again, so that the P-type gallium nitride, the light-emitting layer and the N-type gallium nitride are stacked in sequence in a direction away from the fourth substrate. Afterwards, the light-emitting diode is transferred to the substrate 101, so that the N-type gallium nitride, the light-emitting layer and the P-type gallium nitride are stacked in sequence in a direction away from the substrate 101. That is, the light-emitting diode transferred to the substrate 101 after another intermediate transfer after step S206 can be the first light-emitting diode 1021. The first electrode 10214, the first doped layer 10211 (N-type gallium nitride), the first light-emitting layer 10212, the second doped layer 10213 (P-type gallium nitride) and the third electrode 10215 in the first light-emitting diode 1021 are stacked in sequence in a direction away from the substrate 101.

[0234] The first light-emitting diode 1021 and the second light-emitting diode 1022 in the second light-emitting unit 102b, and the first light-emitting diode 1021 and the second light-emitting diode 1022 in the third light-emitting unit 102c are transferred by the above method. Moreover, there is no special requirement for the sequence of the six transfer processes, and the transfer processes in any order can be realized. In addition, the connection between the light-emitting unit 102 and the substrate 101 can be unrestricted, and can be connected by anisotropic conductive film (ACF), metal electrode connection, and solder paste welding connection. The structure obtained after the final transfer is completed is referenced Fig. 27 , Fig. 27 Only four light emitting diodes in total included in two light emitting units are illustrated.

[0235] For the first optional implementation, if the luminous colors of the first luminous unit 102a, the second luminous unit 102b and the third luminous unit 102c of the luminous unit group Z in the finally prepared luminous component 10 are the same, and the color conversion unit is used to realize the display of multiple colors. For example, the luminous color of the first luminous unit 102a, the luminous color of the second luminous unit 102b and the luminous color of the third luminous unit 102c are all blue. In order to realize the display of multiple colors, the light-emitting side of the first luminous unit 102a has a first color conversion unit 105 (the first color conversion unit 105 is used to convert the blue light emitted by the first luminous unit 102a into red light) which is green, the light-emitting side of the second luminous unit 102b has a light-transmitting portion 107 (the light-transmitting portion 107 is used to transmit the blue light emitted by the second luminous unit 102b), and the light-emitting side of the third luminous unit 102c has a second color conversion unit 106 (the second color conversion unit 106 is used to convert the blue light emitted by the third luminous unit 102c into green light).

[0236] In this case, since the first light-emitting unit 102a, the second light-emitting unit 102b and the third light-emitting unit 102c emit the same light-emitting color, it is only necessary to use the above steps S201 to S206 to prepare the light-emitting unit 102 once.

[0237] In step S102, transferring the first light emitting diode 1021 included in the light emitting unit 102 onto the substrate 101 includes a transfer process: transferring the first light emitting diode 1021 in the first light emitting unit 102a, the second light emitting unit 102b and the third light emitting unit 102c onto the substrate 101. In step S103, transferring the second light emitting diode 1022 included in the light emitting unit 102 onto the substrate 101 includes a transfer process: transferring the second light emitting diode 1022 in the first light emitting unit 102a, the second light emitting unit 102b and the third light emitting unit 102c onto the substrate 101.

[0238] That is, when the light-emitting colors of the first light-emitting unit 102a, the second light-emitting unit 102b, and the third light-emitting unit 102c of the light-emitting unit group Z are the same, a total of two transfer processes are required. The number of transfer processes is relatively small, and the preparation rate is high. Among them, the transfer process of the first light-emitting diode 1021 and the second light-emitting diode 1022 in the light-emitting unit 102 can refer to the relevant description of the transfer process of the first light-emitting diode 1021 and the second light-emitting diode 1022 of the first light-emitting unit 102a, and the embodiments of the present application will not be repeated here.

[0239] In the embodiment of the present application, in order to realize the supporting function for the first connection electrode 1023 formed subsequently, reference is made to Fig.28 , before step S104, the method further includes:

[0240] Step S105 , forming a first filling portion, wherein the first filling portion is at least located in a gap between the first light emitting diode and the second light emitting diode of the light emitting unit.

[0241] refer to Fig.29 and Fig.30 In addition to filling the gap between the first light emitting diode 1021 and the second light emitting diode 1022 of the light emitting unit 102, the first filling portion 103 can also fill the gap between adjacent light emitting units 102. The first filling portion 103 exposes the third electrode 10215 and the fourth electrode 10225.

[0242] Optionally, the material of the first filling part 103 can be selected from silicon dioxide (SiO2), silicon nitride (Si3N4) and non-conductive glue (such as OC glue). The present embodiment of the application does not limit the filling scheme of the first filling part 103. The film material can be grown by photolithography, evaporation or sputtering, and the glue can be filled by spin coating, spray coating and scraping. The filling material can be selected from transparent materials according to product requirements.

[0243] refer to Fig.31 The first filling portion 103 may only fill the gap between the first light emitting diode 1021 and the second light emitting diode 1022 of the light emitting unit 102, and the gap between adjacent light emitting units 102 may be a retaining wall structure 108. The first filling portion 103 exposes the third electrode 10215 and the fourth electrode 10225.

[0244] in Fig.31 The material of the first filling part 103 can be a transparent material, a reflective material or a color conversion material. For example, the reflective material can be a white material, which has a certain reflective property and can reflect the light emitted from the side wall and the bottom of the light-emitting diode to the front for light emission, thereby improving the overall brightness of the display product. The material of the retaining wall structure 108 can be a black material to ensure the improvement of contrast and prevent crosstalk between different colors.

[0245] This solution requires first forming a retaining wall structure 108 , and then using a reflective material or a color conversion material to fill the gaps between adjacent light-emitting diodes to obtain a first filling portion 103 .

[0246] Accordingly, reference Fig.28 , step S104 may be: forming a first connecting electrode on a side of the first filling portion away from the substrate, and electrically connecting the first connecting electrode to the third electrode and the fourth electrode.

[0247] refer to Figure 32 to Figure 34 In the embodiment of the present application, the first connection electrode 1023 can be evaporated between the first light-emitting diode 1021 and the second light-emitting diode 1022 of the light-emitting unit 102 by photolithography, evaporation or sputtering, and the first light-emitting diode 1021 and the second light-emitting diode 1022 are connected in series. The first connection electrode 1023 can be a transparent electrode, and there is no restriction on its material. For example, materials such as nano silver wire, ITO, AZO, etc. can be selected, and conductive adhesive materials such as conductive photoresist and silver paste can also be selected.

[0248] For the solution that the first light emitting unit 102a, the second light emitting unit 102b and the third light emitting unit 102c emit the same color, after step S104, refer to Figure 35 to Figure 37, color conversion materials such as quantum dots or phosphors can also be filled into the area above the light-emitting unit 102 by spraying and dispensing, and then the quantum dots are encapsulated (encapsulation layer 109) by a layer of glue or dielectric material. Among them, for RGB full-color display products, red and green are both realized by color conversion schemes. Among them, the color conversion material constitutes the color conversion part, and there are the following two schemes.

[0249] Option 1, reference Fig.29 , except for the area where the third electrode 10215 and the fourth electrode 10225 are exposed, the other areas of the surface of the first filling portion 103 away from the substrate 101 are coplanar, the first color conversion portion 105 of the first light-emitting unit 102a away from the substrate 101, the light-transmitting portion 107 of the second light-emitting unit 102b away from the substrate 101, and the second color conversion portion 106 of the third light-emitting unit 102c away from the substrate 101 all protrude from the surface of the first filling portion 103 away from the substrate 101.

[0250] Option 2, reference Fig.30 , a space (groove) is reserved in the first filling portion 103 for the first color conversion portion 105, the light-transmitting portion 107 and the second color conversion portion 106, so that the first color conversion portion 105 is as far away from the surface of the substrate 101 as possible, the surface of the light-transmitting portion 107 is as far away from the substrate 101 as the surface of the second color conversion portion 106 is as far away from the substrate 101 as possible, and the surface of the first filling portion 103 other than the groove is coplanar with the surface of the first filling portion 103 other than the groove that is away from the substrate 101. The groove may be formed by an etching process, and the depth of the groove may be greater than or equal to the maximum distance from the surface of the first connection electrode 1023 away from the substrate 101 to the surface of the first filling portion 103 away from the substrate 101.

[0251] It should be noted that if the material of the first filling part 103 is a color conversion material, and the color conversion material of the first filling part 103 is the same as the color conversion material of the corresponding color conversion part, then the first light-emitting diode 1021 and the second light-emitting diode 1022 included in the light-emitting unit 102 are wrapped as a whole by the same color conversion material, thereby solving the problem of blue light leakage from the side and improving color purity.

[0252] As a second optional implementation, taking the light emitting component including a vertical LED and a flip-chip LED as an example, refer to Fig.38 The preparation process of the first light emitting diode 1021 in the above step S102 can refer to the preparation process of the first light emitting diode 1021 in the above steps S201 to S206. The preparation process of the second light emitting diode 1022 in the above step S103 includes:

[0253] Step S301: forming a third doped thin film, a second light-emitting thin film and a fourth doped thin film in sequence on a first substrate.

[0254] In the examples of this application, refer to Fig.39 The third doped film c1, the second light emitting film c2 and the fourth doped film c3 are stacked in sequence in a direction away from the first substrate. The third doped film c1 is made of N-type gallium nitride (GaN), and the fourth doped film c3 is made of P-type gallium nitride (GaN).

[0255] Step S302: etching the third doped film, the second light-emitting film and the fourth doped film to obtain a fourth doped layer, a second light-emitting layer and a third doped layer stacked in sequence.

[0256] refer to Fig.40 The fourth doping layer 10223 obtained by etching has a first target area a1 and a second target area a2. The second light emitting layer 10222 and the third doping layer 10221 are stacked in the second target area a2 and the fourth doping layer 10223. The first target area a1 is a region for electrical connection with the first light emitting diode 1021.

[0257] The height of the etched mesa of the fourth doping layer 10223 needs to be substantially equal to the total thickness of the first light emitting diode 1021 , the subsequent thickness of the insulating layer 104 on the first target area a1 , and the thickness of the first connecting electrode 1023 .

[0258] Step S303: forming an insulating layer on a side of the fourth doped layer away from the first substrate.

[0259] refer to Fig.41 , the insulating layer 104 includes a third via hole k3 and a fourth via hole k4. The orthographic projection of the third via hole k3 on the substrate 101 overlaps with the orthographic projection of the fourth doped layer 10223 on the substrate 101, and the third via hole k3 exposes a portion of the fourth doped layer 10223. The orthographic projection of the fourth via hole k4 on the substrate 101 overlaps with the orthographic projection of the third doped layer 10221 on the substrate 101, and the fourth via hole k4 exposes a portion of the third doped layer 10221.

[0260] Step S304 , forming a first connecting electrode and a second connecting electrode on a side of the insulating layer away from the first substrate.

[0261] refer to Fig.42 The first connection electrode 1023 is located in the first target area a1 and is connected to the fourth doping layer 10223 through the third via hole k3. The second connection electrode 1024 is located in the second target area a2 and is connected to the third doping layer 10221 through the fourth via hole k4.

[0262] For the second optional implementation, if the first light emitting unit 102a, the second light emitting unit 102b and the third light emitting unit 102c of the light emitting unit group Z in the finally prepared light emitting component 10 have different light emitting colors, for example, the light emitting color of the first light emitting unit 102a is green, the light emitting color of the second light emitting unit 102b is blue, and the light emitting color of the third light emitting unit 102c is red.

[0263] In this case, it is necessary to use the above-mentioned steps S201 to step 206 to respectively prepare the first light-emitting diode 1021 of the first light-emitting unit 102a, the first light-emitting diode 1021 of the second light-emitting unit 102b, and the first light-emitting diode 1021 of the third light-emitting unit 102c, and use the above-mentioned steps S301 to step S304 to prepare the second light-emitting diode 1022 of the first light-emitting unit 102a, the second light-emitting diode 1022 of the second light-emitting unit 102b, and the second light-emitting diode 1022 of the third light-emitting unit 102c.

[0264] Transferring the first light-emitting diode 1021 included in the light-emitting unit 102 to the substrate 101 in step S102 includes three transfer processes: 1. Transferring the first light-emitting diode 1021 in the first light-emitting unit 102a to the substrate 101; 2. Transferring the first light-emitting diode 1021 in the second light-emitting unit 102b to the substrate 101; 3. Transferring the first light-emitting diode 1021 in the third light-emitting unit 102c to the substrate 101.

[0265] Transferring the second light-emitting diode included in the light-emitting unit 102 to the substrate 101 in step S103 includes three transfer processes: 1. Transferring the second light-emitting diode 1022 in the first light-emitting unit 102a to the substrate 101; 2. Transferring the second light-emitting diode 1022 in the second light-emitting unit 102b to the substrate 101; 3. Transferring the second light-emitting diode 1022 in the third light-emitting unit 102c to the substrate 101.

[0266] That is, when the light-emitting colors of the first light-emitting unit 102 a , the second light-emitting unit 102 b and the third light-emitting unit 102 c of the light-emitting unit group Z are different from each other, a total of six transfer processes are required.

[0267] Taking the transfer process of the first light emitting diode 1021 and the second light emitting diode 1022 of the first light emitting unit 102a as an example, the first light emitting diode 1021 is transferred first, and then the second light emitting diode 1022 is transferred.

[0268] Since in the structure obtained in the above step S206, all light-emitting diodes are N-type gallium nitride, the light-emitting layer and P-type gallium nitride stacked in a direction away from the third substrate, the structure of the light-emitting diodes on the third substrate is transferred to the fourth substrate again, so that the P-type gallium nitride, the light-emitting layer and the N-type gallium nitride are stacked in sequence in a direction away from the fourth substrate.

[0269] Afterwards, the light-emitting diode is transferred to the substrate 101 so that the N-type gallium nitride, the light-emitting layer and the P-type gallium nitride are stacked in sequence in a direction away from the substrate 101. That is, the light-emitting diode transferred to the substrate 101 after another intermediate transfer after step S206 can be the first light-emitting diode 1021. The first electrode 10214, the first doped layer 10211 (N-type gallium nitride), the first light-emitting layer 10212, the second doped layer 10213 (P-type gallium nitride) and the third electrode 10215 in the first light-emitting diode 1021 are stacked in sequence in a direction away from the substrate 101.

[0270] Afterwards, the light-emitting diode obtained from step S301 to step S304 is transferred to the substrate 101, and the first light-emitting diode 1021 is located in the first target area a1, and the first connection electrode 1023 is connected to the third electrode 10215 (the first connection electrode 1023 and), and the second connection electrode 1024 (the second connection electrode 1024 can also be called the second electrode 10224) is connected to the driving circuit. Alternatively, in order to save the preparation process, for the first light-emitting diode 1021 in this solution, it is not necessary to prepare the third electrode 10215, and the first connection electrode 1023 and the second doping layer 10213 can be directly connected, that is, the preparation of the third electrode 10215 can be omitted, or the first connection electrode 1023 can be considered to be the third electrode 10215.

[0271] Compared with the first solution (two vertical LEDs), the second solution (vertical LED + inverted LED) has lower requirements on electrode transparency. Compared with traditional metal electrodes, transparent electrodes have higher resistivity, so when the transmission distance is long, it will cause an increase in voltage. Compared with the first solution, the second solution only needs to design the first connecting electrode 1023 on the upper side of the vertical LED as a transparent electrode. At the same time, the current transmission distance is shorter, so its voltage is lower than that of the first solution, and it is expected to achieve lower power consumption.

[0272] Among them, the second solution is more complicated than the first solution, and the overall cost will increase to a certain extent, but it can improve the brightness of the overall display product while ensuring high contrast, thereby reducing the power consumption of the overall module, thereby further improving the performance of the display product.

[0273] In the embodiment of the present application, in order to improve the optical effect of the light-emitting unit 102, a special treatment may be performed on the surface of the fourth doping layer 10223 in the second light-emitting diode 1022 away from the third doping layer 10221. The treatment process may be performed during the transfer process of forming the second light-emitting diode 1022, or may be performed after being transferred to the substrate 101.

[0274] The special treatment during the transfer process of forming the second light emitting diode 1022 may refer to: Fig.42 The structure shown is transferred to a first temporary substrate, and the first substrate is peeled off from the fourth doping layer 10223; the surface of the fourth doping layer 10223 away from the third doping layer 10221 is specially treated; the structure after the special treatment is transferred to a second temporary substrate, and the first temporary substrate is peeled off from the third doping layer 10221. Finally, the entire structure is transferred to the base 101. Before the second light-emitting diode 1022 is transferred to the base 101, two more transfers are required.

[0275] Optionally, the special treatment may include two treatment methods. Solution 1 (roughening solution) is to perform corrosion or dry etching on the surface of the fourth doping layer 10223 away from the substrate 101 to change the flat surface into an irregular rough surface. In this case, refer to Figure 6 , the surface of the fourth doped layer 10223 away from the third doped layer 10221 is a rough surface. Solution 2 (photonic crystal solution), the surface of the fourth doped layer 10223 away from the substrate 101 is nano-imprinted to form a periodic two-dimensional photonic crystal structure. In this case, refer to Figure 7 , the surface of the fourth doping layer 10223 away from the third doping layer 10221 has a two-dimensional photonic crystal structure. In addition, since the two-dimensional photonic crystal structure is obtained by processing the fourth doping layer 10223, the material of the two-dimensional photonic crystal structure is the same as the material of the fourth doping layer 10223. Among them, the two-dimensional photonic crystal structure can improve the light extraction efficiency on the one hand, and on the other hand, it can also improve the light emission ratio in the vertical direction, converge the beam angle, and improve the display effect on the front side.

[0276] In summary, the embodiment of the present application provides a method for preparing a light-emitting component, wherein the stacking directions of the film layers in the first light-emitting diode and the second light-emitting diode included in the light-emitting unit of the light-emitting component prepared by the method are opposite, so it is convenient to connect the first light-emitting diode and the second light-emitting diode in series through the first connecting electrode. In addition, since the two light-emitting diodes of the light-emitting unit are connected in series, the voltage of the light-emitting unit can be increased, and then the driving current provided to the light-emitting unit can be reduced, thereby avoiding excessive power consumption of the display panel. In addition, since the power consumption of the display panel is low, it will not cause the temperature in the display panel to be too high, and the reliability of the display panel can be guaranteed.

[0277] Fig.43 is a schematic diagram of the structure of a display panel provided in an embodiment of the present application. Fig.43 The display panel 00 includes a display back panel 20 and a plurality of light-emitting components 10 .

[0278] refer to Fig.43 The plurality of light emitting components 10 are located in the display area 00a of the display panel 00, and the plurality of light emitting components 10 are arranged in an array. The display backplane 20 is used to provide a driving signal to the light emitting unit in the light emitting component 10, so as to drive the light emitting unit 101 to emit light.

[0279] Since the display panel can have substantially the same technical effects as the light-emitting components described in the previous embodiments, the technical effects of the display panel will not be repeatedly described here for the purpose of brevity.

[0280] The terms used in the embodiments of this application are only used to explain the embodiments of this application, and are not intended to limit this application. Unless otherwise defined, the technical terms or scientific terms used in the embodiments of this application should be the common meanings understood by people with general skills in the field to which this application belongs.

[0281] The terms used in the implementation mode of the present application are only used to explain the embodiments of the present application, and are not intended to limit the present application. Unless otherwise defined, the technical terms or scientific terms used in the implementation mode of the present application should be the common meanings understood by people with ordinary skills in the field to which the present application belongs. The words "first", "second", "third" and similar words used in the patent application specification and claims of the present application do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantity limit, but indicate that there is at least one. Words such as "include" or "include" and similar words mean that the elements or objects appearing in front of "include" or "include" include the elements or objects listed after "include" or "include" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0282] The above description is only an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A light-emitting component, comprising a substrate and a light-emitting unit located on the substrate, characterized in that: The light emitting unit comprises a first light emitting diode and a second light emitting diode; The first light-emitting diode comprises a first doped layer, a first light-emitting layer and a second doped layer sequentially stacked in a direction away from the substrate, and the second light-emitting diode comprises a third doped layer, a second light-emitting layer and a fourth doped layer sequentially stacked in a direction away from the substrate; The first doping layer and the fourth doping layer have the same doping type, the second doping layer and the third doping layer have the same doping type, and the first light-emitting layer and the second light-emitting layer have the same luminescent color; The light emitting unit further includes a first connecting electrode, and the second doping layer and the fourth doping layer are electrically connected via the first connecting electrode.

2. The light emitting assembly according to claim 1, characterized in that: The light emitting assembly comprises a first filling portion located on the substrate and arranged on the same side as the light emitting unit, wherein the first filling portion is at least located in a gap between the first light emitting diode and the second light emitting diode; Wherein, the distance between the surface of the first filling portion away from the substrate and the substrate is greater than the maximum value of the distance between the surface of the second doping layer close to the substrate and the substrate, and the distance between the surface of the fourth doping layer close to the substrate and the substrate; The first connecting electrode is located at a side of the first filling portion away from the substrate.

3. The light emitting assembly according to claim 2, characterized in that: The distance between the surface of the first filling portion away from the substrate and the substrate is greater than the distance between the surface of the first light-emitting diode away from the substrate and the substrate, the first filling portion includes a first via hole, the orthographic projection of the first via hole on the substrate overlaps with the orthographic projection of the first light-emitting diode on the substrate, and the first connecting electrode is electrically connected to the light-emitting diode through the first via hole; and / or, The distance between the surface of the first filling portion on the side away from the substrate and the substrate is greater than the distance between the surface of the second light-emitting diode on the side away from the substrate and the substrate. The first filling portion includes a second via hole, and the orthographic projection of the second via hole on the substrate overlaps with the orthographic projection of the second light-emitting diode on the substrate. The first connecting electrode is electrically connected to the light-emitting diode through the second via hole.

4. The light emitting assembly according to claim 2, characterized in that: The thickness of the first filling portion is equal to the distance between a surface of the first filling portion on a side away from the substrate and the substrate.

5. The light emitting assembly according to claim 1, characterized in that: The fourth doping layer is located on a side of the first light emitting diode away from the substrate; The fourth doped layer includes a first target area and a second target area, the orthographic projection of the first light-emitting diode on the substrate overlaps with the orthographic projection of the first target area on the substrate, and the second light-emitting layer and the third doped layer are both stacked with the fourth doped layer in the second target area; The first connection electrode is located between the fourth doping layer and the second doping layer, and is electrically connected to the first target region and the second doping layer respectively.

6. The light emitting assembly according to claim 5, characterized in that: The light-emitting unit further comprises an insulating layer located between the second light-emitting diode and the substrate, and the insulating layer is arranged in close contact with the second light-emitting diode; The insulating layer includes a third via hole, an orthographic projection of the third via hole on the substrate overlaps with an orthographic projection of the fourth doped layer on the substrate, and the fourth doped layer is electrically connected to the second doped layer via the first connecting electrode passing through the third via hole; The insulating layer includes a fourth via hole, the orthographic projection of the fourth via hole on the substrate overlaps with the orthographic projection of the third doped layer on the substrate, the substrate includes a driving circuit, and the third doped layer is electrically connected to the driving circuit through a second connecting electrode passing through the fourth via hole.

7. The light emitting assembly according to claim 6, characterized in that: The third doped layer includes a first surface facing the substrate, a second surface away from the substrate, and a first side surface located between the first surface and the second surface; the second light-emitting layer includes a third surface facing the substrate, a fourth surface away from the substrate, and a second side surface located between the third surface and the fourth surface; the fourth doped layer includes a fifth surface facing the substrate, a sixth surface away from the substrate, and a third side surface located between the fifth surface and the sixth surface; The fifth surface includes a first partial surface located in the first target area and a second partial surface located in the second target area, the first partial surface is close to the sixth surface relative to the second partial surface, the third side surface includes a first sub-side surface and a second sub-side surface, the first sub-side surface is farther away from the first light-emitting diode relative to the second sub-side surface, the second sub-side surface includes a third partial surface connecting the first partial surface and the second partial surface, and a fourth partial surface connecting the first partial surface and the sixth surface, the first side surface includes a third sub-side surface and a fourth sub-side surface, the third sub-side surface is farther away from the first light-emitting diode relative to the fourth sub-side surface, the second side surface also includes a fifth sub-side surface and a sixth sub-side surface, the fifth sub-side surface is farther away from the first light-emitting diode relative to the sixth sub-side surface; The insulating layer at least covers the first surface, the fourth sub-side surface, the sixth sub-side surface, the third partial surface, and the first partial surface.

8. The light emitting assembly according to claim 7, characterized in that: The insulating layer further covers the third sub-side surface, the fifth sub-side surface, the first sub-side surface, and the fourth partial surface.

9. The light emitting assembly according to claim 7, characterized in that: The sixth surface is a rough surface; or, the sixth surface has a two-dimensional photonic crystal structure, and the material of the two-dimensional photonic crystal structure is the same as that of the fourth doping layer.

10. The light emitting assembly according to any one of claims 1 to 9, characterized in that: The first light emitting diode comprises a first electrode located between the first doping layer and the substrate, the first electrode being electrically connected to a driving circuit on the substrate; and / or, The second light emitting diode includes a second electrode located between the third doping layer and the substrate, and the second electrode is electrically connected to a driving circuit on the substrate.

11. The light emitting assembly according to any one of claims 1 to 9, characterized in that: The light emitting assembly includes n light emitting diodes; The first light-emitting diode is one of n light-emitting diodes, the first light-emitting diode comprises a first electrode located between the first doping layer and the substrate, the first electrode is electrically connected to a driving circuit on the substrate; and / or, The second light emitting diode is another one of the n light emitting diodes. The second light emitting diode includes a second electrode located between the third doping layer and the substrate. The second electrode is electrically connected to a driving circuit on the substrate.

12. The light emitting assembly according to claim 11, characterized in that: The driving circuit has a first signal electrode and a second signal electrode; The first signal electrode is electrically connected to the first electrode, and the second signal electrode is electrically connected to the second electrode.

13. The light emitting assembly according to any one of claims 1 to 9, characterized in that: The first doping layer and the fourth doping layer are made of the same material, and the second doping layer and the third doping layer are made of the same material; The first light-emitting layer and the second light-emitting layer are made of the same material.

14. The light emitting assembly according to any one of claims 1 to 9, characterized in that: The light emitting assembly includes a light emitting unit group, the light emitting unit group includes a first light emitting unit and a second light emitting unit, and the light emitting color of the first light emitting unit is different from the light emitting color of the second light emitting unit.

15. The light emitting assembly according to any one of claims 1 to 9, characterized in that: The light-emitting assembly includes a light-emitting unit group, the light-emitting unit group includes a first light-emitting unit and a second light-emitting unit, and the light-emitting color of the first light-emitting unit is the same as the light-emitting color of the second light-emitting unit; The light-emitting component includes a first color conversion portion, which is located on a side of the first light-emitting unit away from the substrate, and an orthographic projection of the first color conversion portion on the substrate overlaps with an orthographic projection of the first light-emitting unit on the substrate.

16. The light emitting assembly according to claim 15, characterized in that: The light emitting assembly further comprises a retaining wall structure surrounding the light emitting unit in a direction parallel to the extension surface of the base; The distance from the side of the retaining wall structure away from the substrate to the substrate is greater than or equal to the distance from the side of the first color conversion portion away from the substrate to the substrate.

17. The light emitting assembly according to claim 16, characterized in that: The retaining wall structure includes a first sub-retaining wall and a second sub-retaining wall which are stacked, the first sub-retaining wall being closer to the base than the second sub-retaining wall, and the distance from the side of the second sub-retaining wall away from the base to the base being greater than or equal to the distance from the side of the first color conversion portion away from the base to the base.

18. The light emitting assembly according to claim 17, characterized in that: The light emitting assembly comprises a first filling portion located on the substrate and arranged on the same side as the light emitting unit, wherein the first filling portion is at least located in a gap between the first light emitting diode and the second light emitting diode; The distance between the side of the first filling portion away from the base and the base is greater than the distance between the side of the first sub-retaining wall away from the base and the base, so that part of the first filling portion is located on the side of the first sub-retaining wall away from the base, and part of the first filling portion is located between the first sub-retaining wall and the second sub-retaining wall; The first filling portion and the second sub-blocking wall form a receiving space, and the first color conversion portion is located in the receiving space.

19. The light emitting assembly according to claim 15, characterized in that: The light-emitting component comprises a first filling portion located on the substrate and arranged on the same side as the light-emitting unit, the first filling portion is at least located in a gap between the first light-emitting diode and the second light-emitting diode, and the first color conversion portion is located on a side of the first filling portion away from the substrate; The material of the first filling part is one of a transparent material, a reflective material and a color conversion material, wherein the reflective material is used to reflect or scatter the light emitted by the light emitting unit, and the color conversion material converts the first wavelength light emitted by the light emitting unit into a second wavelength light.

20. The light emitting assembly according to claim 19, characterized in that: The first filling portion is used to convert light into a first color, and the first color conversion portion is used to convert light into a second color; The first color is the same as the second color, or the wavelength of light of the first color is smaller than the wavelength of light of the second color.

21. The light emitting assembly according to claim 15, characterized in that: The light emitting component further comprises: an encapsulation layer; The encapsulation layer is located on a side of the first color conversion portion away from the first light-emitting unit.

22. The light emitting assembly according to any one of claims 1 to 9, characterized in that: The light-emitting assembly further includes a retaining wall structure surrounding the light-emitting unit in a direction parallel to the extension surface of the base; the retaining wall structure and the base form a receiving space for receiving the light-emitting unit, and the first filling portion fills the receiving space; The material of the first filling part is one of a transparent material, a reflective material and a color conversion material, wherein the reflective material is used to reflect or scatter the light emitted by the light emitting unit, and the color conversion material converts the first wavelength light emitted by the light emitting unit into a second wavelength light.

23. A method for preparing a light-emitting component, characterized in that: The method comprises: Obtaining a substrate; Transferring a first light-emitting diode included in the light-emitting unit onto the substrate, wherein the first light-emitting diode includes a first doping layer, a first light-emitting layer, and a second doping layer stacked in sequence in a direction away from the substrate; The second light-emitting diode included in the light-emitting unit is transferred onto the substrate, and the second light-emitting diode includes a third doping layer, a second light-emitting layer and a fourth doping layer which are sequentially stacked in a direction away from the substrate; wherein the first doping layer and the fourth doping layer have the same doping type, the second doping layer and the third doping layer have the same doping type, and the first light-emitting layer and the second light-emitting layer have the same luminous color; The second doping layer and the fourth doping layer are electrically connected via a first connecting electrode.

24. The method according to claim 23, characterized in that Before electrically connecting the second doped layer and the fourth doped layer through the first connecting electrode, the method further includes: forming a first filling portion, wherein the first filling portion is at least located in a gap between the first light-emitting diode and the second light-emitting diode, and the first filling portion exposes the second doping layer and the fourth doping layer; The second doping layer and the fourth doping layer are electrically connected via a first connecting electrode, comprising: A first connecting electrode is formed on a side of the first filling portion away from the substrate, and the first connecting electrode is electrically connected to the second doping layer and the fourth doping layer.

25. The method according to claim 24, characterized in that The step of obtaining a first light emitting diode comprises: forming a first doping layer, a first light-emitting layer and a second doping layer in sequence on the first substrate; Transferring the first doped layer, the first light-emitting layer and the second doped layer from the first substrate to the second substrate, so that the second doped layer, the first light-emitting layer and the first doped layer are stacked in sequence in a direction away from the second substrate; forming a first electrode on a side of the first doped layer away from the second substrate; Transferring the first electrode, the first doped layer, the first light-emitting layer and the second doped layer from the second substrate to a third substrate, so that the first electrode, the first doped layer, the first light-emitting layer and the second doped layer are stacked in sequence in a direction away from the third substrate; A third electrode is formed on a side of the second doping layer away from the third substrate.

26. The method according to claim 25, characterized in that The step of obtaining a second light emitting diode comprises: forming a fourth doping layer, a second light-emitting layer and a third doping layer in sequence on the first substrate; Transferring the fourth doped layer, the second light-emitting layer and the third doped layer from the first substrate to the second substrate, so that the third doped layer, the second light-emitting layer and the fourth doped layer are stacked in sequence in a direction away from the second substrate; forming a fourth electrode on a side of the fourth doped layer away from the second substrate; Transferring the fourth electrode, the fourth doped layer, the second light-emitting layer and the third doped layer from the second substrate to the third substrate, so that the fourth electrode, the fourth doped layer, the second light-emitting layer and the third doped layer are stacked in sequence in a direction away from the third substrate; A second electrode is formed on a side of the third doping layer away from the third substrate.

27. The method according to claim 23, characterized in that Acquiring the second light emitting diode and the first connecting electrode comprises: A fourth doping layer, a second light-emitting layer and a third doping layer are sequentially formed on the first substrate, wherein the fourth doping layer includes a first target region and a second target region, and the second light-emitting layer and the third doping layer are both stacked with the fourth doping layer in the second target region; forming an insulating layer on a side of the fourth doped layer away from the first substrate, the insulating layer comprising a third via hole, and an orthographic projection of the third via hole on the substrate overlaps with an orthographic projection of the fourth doped layer on the substrate; A first connecting electrode is formed on a side of the insulating layer away from the first substrate, and the first connecting electrode is electrically connected to the fourth doping layer through the third via hole.

28. A display panel, characterized in that: The display panel comprises a display backplane, and a plurality of light-emitting components according to any one of claims 1 to 22 located on one side of the display backplane; Wherein, the display backplane is used to drive the light-emitting units in the light-emitting components to emit light.

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