Semiconductor device and power conversion device

Abstract

The invention relates to a semiconductor device and a power converter. The technique disclosed in the present specification is a technique for effectively reducing resistance even when the electrode shape has irregularities. A semiconductor device according to the technology disclosed in the specification includes: a semiconductor chip; a case in which the semiconductor chip is housed; a main electrode which is electrically connected to the semiconductor chip via a lead wire, and which is partially exposed to the outside from the case; and a conductive material coated on the surface of the main electrode exposed from the case, the surface of the main electrode being a surface connected to the bus bar.

Description

Technical Field

[0001] The technology disclosed in this specification relates to semiconductor technology. Background Art

[0002] As a method for reducing the contact resistance between the bus bar and the main electrode of a semiconductor device, for example, a method disclosed in Patent Document 1 is known.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2006-294849

[0004] However, in the method disclosed in Patent Document 1, when the surface of the main electrode has irregularities, the contact area becomes small, and the contact resistance or the contact thermal resistance may not be reduced. Summary of the invention

[0005] The technology disclosed in this specification of the present invention has been proposed in view of the above-described problems, and is a technology for effectively reducing the resistance even when the electrode shape has irregularities.

[0006] The first scheme of the technology disclosed in the specification of the present invention, namely, a semiconductor device comprises: a semiconductor chip; a shell, which accommodates the semiconductor chip inside; a main electrode, which is electrically connected to the semiconductor chip via a wire, and a part of the main electrode is exposed to the outside from the shell; and a conductive material, which is applied to the surface of the main electrode exposed from the shell, and the surface of the main electrode is the surface connected to the bus bar.

[0007] Effects of the Invention

[0008] According to at least the first scheme of the technology disclosed in the specification of the present invention, since the main electrode is in contact with the bus bar via a conductive material, the contact area between the main electrode and the bus bar is not reduced even when the main electrode or the bus bar has bumps, etc., and the contact resistance or contact thermal resistance between the main electrode and the bus bar can be reduced.

[0009] In addition, the objectives, features, aspects, and advantages of the technology disclosed in this specification will become more apparent from the following detailed description and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 A diagram showing an example of the structure of a semiconductor device according to an embodiment.

[0011] Figure 2 Yes means Figure 1 A cross-sectional view of an example of the A-A' section.

[0012] Figure 3This is a diagram showing an example of a structure in which a bus bar is connected to a main electrode from the outside.

[0013] Figure 4 Yes means Figure 3 The illustrated embodiment is a cross-sectional view of an example of a structure in which a bus bar is connected to a main electrode.

[0014] Figure 5 It is a diagram showing an example of a structure in which a bus bar is connected to a main electrode of a semiconductor device according to an embodiment from the outside.

[0015] Figure 6 Yes means Figure 5 The illustrated embodiment is a cross-sectional view of an example of a structure in which a bus bar is connected to a main electrode.

[0016] Figure 7 A diagram showing an example of the structure of a semiconductor device according to an embodiment.

[0017] Figure 8 A diagram showing an example of the structure of a semiconductor device according to an embodiment.

[0018] Fig. 9 It is a diagram conceptually showing an example of the configuration of a power conversion system including the power conversion device according to the embodiment. DETAILED DESCRIPTION

[0019] Below, while referring to the attached Figure 1 In the following embodiments, detailed features and the like are shown for the purpose of explaining the technology, but these are examples and not all of them are essential features in order to implement the embodiments.

[0020] In addition, the drawings are only schematically shown, and for the convenience of explanation, the structures are appropriately omitted or simplified in the drawings. In addition, the size and position of the structures shown in different drawings are not necessarily accurately recorded, and may be appropriately changed. In addition, in drawings such as top views that are not sectional views, shadows are sometimes added to facilitate understanding of the contents of the embodiments.

[0021] In the following description, the same components are denoted by the same reference numerals and are illustrated, and their names and functions are also the same, so their detailed description may be omitted to avoid duplication.

[0022] In addition, when the description described in the specification of the present invention states that a certain component is “equipped with,” “includes,” or “has” a certain component, this does not mean an exclusive expression that excludes the existence of other components unless otherwise specified.

[0023] In addition, in the descriptions recorded in the specification of the present invention, even when ordinal numbers such as "1st" or "2nd" are used, these terms are used only for convenience in order to facilitate the understanding of the contents of the implementation method, and the contents of the implementation method are not limited to the order that can be generated by these ordinal numbers.

[0024] In addition, in the descriptions recorded in the specification of the present invention, even when terms such as "up", "down", "left", "right", "side", "bottom", "front" or "back" are used to indicate specific positions or directions, these terms are only used for convenience to facilitate understanding of the contents of the implementation method and have nothing to do with the position or direction when the implementation method is actually implemented.

[0025] In addition, in the description described in the specification of the present invention, when it is described as "the upper surface of..." or "the lower surface of...", etc., in addition to the upper surface or the lower surface of the target structural element itself, it also includes the state where other structural elements are formed on the upper surface or the lower surface of the target structural element. That is, for example, when it is described as "B is provided on the upper surface of A", it does not prevent other structural element "C" from being interposed between A and B.

[0026] <First Embodiment>

[0027] Next, a semiconductor device according to this embodiment will be described.

[0028] <Structure of semiconductor device>

[0029] Figure 1 FIG. 1 is a diagram showing an example of the structure of a semiconductor device according to the present embodiment. Figure 1 As shown in the example, the semiconductor device is a structure in which the semiconductor chip is surrounded by the housing 18, but a part of the main electrode 14 and the conductive material 12 provided (applied) on the upper surface of the main electrode 14 are exposed from the upper surface of the housing 18. In addition, an opening 20 is formed on the upper surface of the main electrode 14, and a nut 16 is formed inside the opening 20. In addition, the conductive material 12 is provided so as to surround the opening 20 when viewed from above.

[0030] The conductive material 12 is made of, for example, PC-TIM (Phase Change-Thermal Interface Material) and may have the property of being solid at a temperature less than or equal to 45°C and softening or liquefying at a temperature exceeding 45°C. If such a property is present, since it is solid at room temperature, the peeling of the conductive material 12 from the semiconductor device during transportation is suppressed. In addition, when the semiconductor device is in operation, the conductive material 12 softens and the degree of adhesion with the busbar becomes good, thereby improving thermal conduction or electrical conductivity. In addition, for example, it may be a material with a thermal conductivity greater than or equal to 3 [W / m·K] and high heat dissipation. If such a property is present, the thermal conductivity of the conductive material 12 is high, so the heat generated inside the module can be efficiently conducted to the busbar 36. Therefore, the temperature rise of the main electrode 14 or the inside of the module can be suppressed.

[0031] Figure 2 Yes means Figure 1 The sectional view of the example of the A-A' section in FIG. Figure 2 As shown in the example, the semiconductor device includes: a base plate 22; an insulating layer 26 provided on the upper surface of the base plate 22 via a bonding material 24A; a copper pattern 28 provided on a portion of the upper surface of the insulating layer 26 via a bonding material 24B; a semiconductor chip 30 provided on a portion of the upper surface of the copper pattern 28 via a bonding material 24C; and a lead 34 provided on the upper surface of the semiconductor chip 30, the upper surface of the copper pattern 28 (the upper surface of the copper pattern 28 separated from the copper pattern 28 on which the semiconductor chip 30 is provided), and a main electrode 18 exposed from the side surface of the housing 18 to the inside of the housing 18. 4; a shell 18, which is arranged on the upper surface of the base plate 22 and accommodates the insulating layer 26, the copper pattern 28, the semiconductor chip 30 and the wire 34; the main electrode 14, which is arranged so that each end is exposed from the upper surface and the inner surface of the shell 18; the conductive material 12, which is arranged (coated) on the upper surface of the main electrode 14 exposed to the outside of the shell 18; the nut 16, which is arranged inside the opening 20 of the main electrode 14; and the packaging resin 32, which is filled in the inside of the shell 18 in a manner covering the base plate 22, the insulating layer 26, the copper pattern 28, the semiconductor chip 30 and the wire 34.

[0032] The semiconductor chip 30 may also be a RC-IGBT in which the switch element and the freewheeling element are integrated into a single chip, or a device using a wide bandgap semiconductor other than silicon, such as SiC or GaN. Here, a wide bandgap semiconductor generally refers to a semiconductor having a bandgap width of approximately greater than or equal to 2 eV, and known examples include Group 3 nitrides such as gallium nitride (GaN), Group 2 oxides such as zinc oxide (ZnO), Group 2 chalcogenides such as zinc selenide (ZnSe), diamond, and silicon carbide (SiC).

[0033] According to the semiconductor device of this embodiment, by providing the conductive material 12 on the upper surface of the main electrode 14 , the contact resistance or contact thermal resistance with the bus bar attached to the main electrode 14 can be reduced, thereby suppressing the temperature rise in the electrode or the inside of the module.

[0034] Figure 3 1 is a diagram showing an example of a structure in which a bus bar is connected to the main electrode 14 from the outside. Figure 4 Yes means Figure 3 1 is a cross-sectional view of an example of a structure in which a bus bar is connected to the main electrode 14. Figure 3 and Figure 4 As shown in the example, the bus bar 36 is mounted on the upper surface of the main electrode 14 of the semiconductor device. In addition, the screw 38 is inserted so as to penetrate the opening 37 provided in the bus bar 36 and the opening 20 provided in the main electrode 14, and the screw 38 and the nut 16 are screwed (fitted) together, thereby fixing the screw 38 and the nut 16.

[0035] In this case, the main electrode 14 and the bus bar 36 are in contact by fixing the screw 38 and the nut 16 as described above, but when the surface of the main electrode 14 has unevenness (including the case where the main electrode 14 is warped), or when the surface of the bus bar 36 has unevenness (including the case where the bus bar 36 is warped), an area where the main electrode 14 is not in contact with the bus bar 36 is generated (that is, the contact area is reduced).

[0036] Figure 5 1 is a diagram showing an example of a structure in which a bus bar is connected to the main electrode 14 of the semiconductor device according to the present embodiment from the outside. Figure 6 Yes means Figure 5 1 is a cross-sectional view of an example of a structure in which a bus bar is connected to the main electrode 14. Figure 5 and Figure 6 As shown in the example, the bus bar 36 is mounted on the upper surface of the main electrode 14 of the semiconductor device via the conductive material 12. In addition, the screw 38 is inserted so as to penetrate the opening 37 provided in the bus bar 36 and the opening 20 provided in the main electrode 14, and the screw 38 and the nut 16 are screwed (fitted) together, thereby fixing the screw 38 and the nut 16.

[0037] In this case, by fixing the screw 38 and the nut 16 as described above, the main electrode 14 and the bus bar 36 are in contact via the conductive material 12. Therefore, even if the surface of the main electrode 14 has unevenness (including the case where the main electrode 14 is warped), or the surface of the bus bar 36 has unevenness (including the case where the bus bar 36 is warped), the conductive material 12 will enter the area where the main electrode 14 and the bus bar 36 are not in direct contact, and the main electrode 14 and the bus bar 36 can be indirectly in contact. Therefore, the contact area between the main electrode 14 and the bus bar 36 is not reduced, and the contact resistance or contact thermal resistance between the main electrode 14 and the bus bar 36 can be reduced. By reducing the contact resistance of this part, the heat generation at the contact part can be suppressed. In addition, by reducing the contact thermal resistance, the heat generated inside the module can be efficiently moved to the bus bar 36, so the temperature rise inside the electrode or the module can be suppressed.

[0038] <Second Embodiment>

[0039] In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals and are illustrated, and their detailed description is appropriately omitted.

[0040] <Structure of semiconductor device>

[0041] Figure 7 FIG. 1 is a diagram showing an example of the structure of a semiconductor device according to the present embodiment. Figure 7 As shown in the example, the semiconductor device is a structure in which the semiconductor chip is surrounded by the housing 18A, but a part of the main electrode 14 and the conductive material 12 provided (applied) on the upper surface of the main electrode 14 are exposed from the upper surface of the housing 18A. In addition, an opening 20 is formed on the upper surface of the main electrode 14, and a nut 16 is formed inside the opening 20. In addition, the conductive material 12 is provided so as to surround the opening 20 when viewed from above. In addition, the structure inside the housing 18A is similar to Figure 2 The structures shown are the same.

[0042] In addition, a convex receiving portion 180 is formed on the upper surface of the housing 18A in which the main electrode 14 is provided so as to surround the main electrode 14 exposed from the housing 18A when viewed from above. The receiving portion 180 is formed, for example, in a circumferential manner at the end of the upper surface of the housing 18A. In addition, the receiving portion 180 is not limited to the case where it is continuously provided so as to surround the main electrode 14 when viewed from above, and for example, it may be formed intermittently in the circumferential direction.

[0043] By providing the receiving portion 180, it is possible to prevent the conductive material 12 that has melted from leaking from the upper surface of the main electrode 14 toward the case 18A (or even the housing 18A) when the bus bar is screwed to the main electrode 14 or when the conductive material 12 melts. Figure 2 Thus, the insulation performance between the main electrode 14 and the base plate 22 can be ensured.

[0044] <Third Embodiment>

[0045] In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals and are illustrated, and their detailed description is appropriately omitted.

[0046] <Structure of semiconductor device>

[0047] Figure 8 FIG. 1 is a diagram showing an example of the structure of a semiconductor device according to the present embodiment. Figure 8 As shown in the example, the semiconductor device is a structure in which the semiconductor chip is surrounded by the housing 18, but a part of the main electrode 14 and the conductive material 12 provided (coated) on the upper surface of the main electrode 14 are exposed from the upper surface of the housing 18. In addition, an opening 20 is formed on the upper surface of the main electrode 14, and a nut 16 is formed inside the opening 20. In addition, the conductive material 12 is provided so as to surround the opening 20 when viewed from above. In addition, the structure inside the housing 18 is similar to Figure 2 The structures shown are the same.

[0048] In addition, a barrier layer 140 is provided on the upper surface of the main electrode 14 exposed from the housing 18 so as to surround the conductive material 12 when viewed from above. The barrier layer 140 is formed, for example, in a manner surrounding the end of the upper surface of the main electrode 14. In addition, the barrier layer 140 is not limited to the case where it is continuously provided so as to surround the conductive material 12 when viewed from above, and for example, it may be formed intermittently in the circumferential direction.

[0049] By providing the barrier layer 140, it is possible to prevent the conductive material 12 that has melted from leaking from the upper surface of the main electrode 14 to the case 18 (or even the case 18) when the bus bar is screwed to the main electrode 14 or when the conductive material 12 melts. Figure 2 Thus, the insulation performance between the main electrode 14 and the base plate 22 can be ensured.

[0050] In addition, the barrier layer 140 can also be applied to Figure 7 The structure of the receiving unit 180 is shown.

[0051] <Fourth Implementation Method>

[0052] In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals and their detailed description is omitted as appropriate.

[0053] <About the structure of the power conversion device>

[0054] In this embodiment, the semiconductor device according to the above-described embodiment is applied to a power conversion device. The power conversion device to which it is applied is not limited to a specific use, but the case of applying it to a three-phase inverter will be described below.

[0055] Fig. 9 It is a diagram conceptually showing an example of the configuration of a power conversion system including the power conversion device according to the present embodiment.

[0056] like Fig. 9 As illustrated, the power conversion system includes a power supply 2100, a power conversion device 2200, and a load 2300. The power supply 2100 is a DC power supply, and supplies DC power to the power conversion device 2200. The power supply 2100 can be composed of various power supplies, for example, it can be composed of a DC system, a solar cell, or a storage battery. In addition, the power supply 2100 can be composed of a rectifier circuit or an AC-DC converter connected to an AC system. In addition, the power supply 2100 can be composed of a DC-DC converter that converts the DC power output from the DC system into a predetermined power.

[0057] The power conversion device 2200 is a three-phase inverter connected between the power source 2100 and the load 2300 . The power conversion device 2200 converts the DC power supplied from the power source 2100 into AC power, and further supplies the AC power to the load 2300 .

[0058] In addition, if Fig. 9 As illustrated, the power conversion device 2200 includes a conversion circuit 2201 that converts DC power into AC power and outputs the AC power, and a control circuit 2203 that outputs a control signal for controlling the conversion circuit 2201 to the conversion circuit 2201 .

[0059] Load 2300 is a three-phase motor driven by AC power supplied from power converter 2200. Load 2300 is not limited to a specific use, and is a motor mounted on various electrical devices, for example, a motor for hybrid vehicles, electric vehicles, railway vehicles, elevators, or air conditioners.

[0060] The following describes the details of the power conversion device 2200. The conversion circuit 2201 includes a switching element and a freewheeling diode (not shown). The DC power supplied from the power supply 2100 is converted into AC power by the on-off operation of the switching element, and is further supplied to the load 2300.

[0061] There are various specific circuit structures of the conversion circuit 2201 , but the conversion circuit 2201 involved in this embodiment is a two-level three-phase full-bridge circuit and has 6 switching elements and 6 freewheeling diodes connected in reverse parallel to the switching elements.

[0062] The semiconductor device in any of the above-described embodiments is applied to at least one of the switching elements and the freewheeling diodes in the conversion circuit 2201. The six switching elements are connected in series two by two to form upper and lower bridge arms, and each upper and lower bridge arm constitutes each phase (i.e., U phase, V phase, and W phase) of the full bridge circuit. Moreover, the output terminals of each upper and lower bridge arm (i.e., the three output terminals of the conversion circuit 2201) are connected to the load 2300.

[0063] In addition, the conversion circuit 2201 has a driving circuit (not shown here) for driving each switching element, but the driving circuit may be built into the semiconductor module, that is, the semiconductor device, or may be a structure having the driving circuit separately from the semiconductor module. The driving circuit generates a driving signal for driving the switching element of the conversion circuit 2201, and further supplies the driving signal to the control electrode of the switching element of the conversion circuit 2201. Specifically, based on the control signal output from the control circuit 2203 described later, the driving signal for turning the switching element on and the driving signal for turning the switching element off are output to the control electrode of each switching element.

[0064] When the switching element is maintained in an on state, the driving signal is a voltage signal greater than or equal to the threshold voltage of the switching element (i.e., an on signal); when the switching element is maintained in an off state, the driving signal is a voltage signal less than or equal to the threshold voltage of the switching element (i.e., an off signal).

[0065] The control circuit 2203 controls the switching elements of the conversion circuit 2201 so as to supply the desired power to the load 2300. Specifically, the time (i.e., the on-time) at which each switching element of the conversion circuit 2201 should be turned on is calculated based on the power to be supplied to the load 2300. For example, the conversion circuit 2201 can be controlled by PWM control that modulates the on-time of the switching element corresponding to the voltage to be output.

[0066] Furthermore, the control circuit 2203 outputs a control instruction (i.e., a control signal) to the drive circuit in such a manner that an on signal is output to a switch element that should be in an on state and an off signal is output to a switch element that should be in an off state at each time. Based on the control signal, the drive circuit outputs the on signal or the off signal as a drive signal to the control electrode of each switch element.

[0067] In the power conversion device 2200 according to the present embodiment, since the semiconductor device of any of the above-described embodiments is used as a switching element of the conversion circuit 2201, the on-resistance after the energization cycle can be stabilized.

[0068] In addition, in this embodiment, an example of applying the semiconductor device of any of the above-described embodiments to a 2-level three-phase inverter is described, but the application example is not limited to this, and the semiconductor device of any of the above-described embodiments can be applied to various power conversion devices.

[0069] In addition, in this embodiment, a 2-level power conversion device is described, but the semiconductor device of any of the above-described embodiments can also be applied to a 3-level or multi-level power conversion device. In addition, when power is supplied to a single-phase load, the semiconductor device of any of the above-described embodiments can also be applied to a single-phase inverter.

[0070] Furthermore, when power is supplied to a DC load or the like, the semiconductor device according to any of the above-described embodiments can also be applied to a DC-DC converter or an AC-DC converter.

[0071] In addition, the power conversion device using the semiconductor device of any of the above-described embodiments is not limited to the case where the load is a motor, and can be used as a power supply device for, for example, an electric discharge machine, a laser processing machine, an induction heating cooker, or a contactless power supply system. In addition, the power conversion device using the semiconductor device of any of the above-described embodiments can also be used as a power conditioner in a solar power generation system or a power storage system.

[0072] <About the Manufacturing Method of Power Converter>

[0073] Next, a method for manufacturing the power conversion device according to the present embodiment will be described.

[0074] First, a semiconductor device is manufactured by the manufacturing method described in the above embodiment. Then, a conversion circuit 2201 including the semiconductor device is provided as a structure of a power conversion device. The conversion circuit 2201 is a circuit for converting input power and outputting the converted power.

[0075] As a configuration of the power conversion device, a control circuit 2203 is provided. The control circuit 2203 is a circuit for outputting a control signal to the conversion circuit 2201, and the control signal is used to control the conversion circuit 2201.

[0076] The semiconductor switch element used in the above-described embodiments is not limited to a switch element composed of a silicon (Si) semiconductor. For example, the semiconductor switch element may be composed of a non-Si semiconductor material having a wider band gap than a Si semiconductor.

[0077] Examples of non-Si semiconductor materials, namely wide bandgap semiconductors, include silicon carbide, gallium nitride-based materials, and diamond.

[0078] Switching elements made of wide-bandgap semiconductors can be used even in high-voltage regions where unipolar operation is difficult for Si semiconductors, and can significantly reduce switching losses generated during switching operations. Therefore, power loss can be significantly reduced.

[0079] In addition, the switching element formed of a wide bandgap semiconductor has low power loss and high heat resistance. Therefore, when a power module having a cooling unit is configured, the heat dissipation fins of the heat sink can be miniaturized, thereby further miniaturizing the semiconductor module.

[0080] In addition, a switching element made of a wide bandgap semiconductor is suitable for high-frequency switching operations. Therefore, when applied to a converter circuit requiring high frequency, the reactor or capacitor connected to the converter circuit can be miniaturized by increasing the switching frequency.

[0081] Therefore, even when the semiconductor switch element in the above-described embodiment is a switch element composed of a wide-gap semiconductor such as silicon carbide, the same effect can be obtained.

[0082] <Effects Produced by the Multiple Embodiments Described Above>

[0083] Next, examples of the effects produced by the multiple embodiments described above are shown. In addition, in the following description, the effects are recorded based on the specific structures exemplified in the multiple embodiments described above, but within the scope of producing the same effect, they can also be replaced with other specific structures exemplified in the present invention specification. That is, below, for convenience, sometimes only any one of the related specific structures is recorded as a representative, but the specific structure recorded as a representative can also be replaced with other related specific structures.

[0084] In addition, this substitution may be performed across a plurality of embodiments. That is, it is also possible to combine the respective structures illustrated in different embodiments to produce the same effect.

[0085] According to the above-described embodiment, the semiconductor device includes a semiconductor chip 30, a housing 18 (or housing 18A) housing the semiconductor chip 30, a main electrode 14, and a conductive material 12. The main electrode 14 is electrically connected to the semiconductor chip 30 via a wire 34. In addition, a portion of the main electrode 14 is exposed to the outside from the housing 18 (or housing 18A). The conductive material 12 is applied to the surface of the main electrode 14 exposed from the housing 18 (or housing 18A). Moreover, the surface of the main electrode 14 is the surface connected to the bus bar 36.

[0086] According to such a structure, the main electrode 14 and the bus bar 36 are in contact with each other via the conductive material 12. Therefore, even when the surface of the main electrode 14 has unevenness (including the case where the main electrode 14 is warped), or when the surface of the bus bar 36 has unevenness (including the case where the bus bar 36 is warped), the conductive material 12 can enter the area where the main electrode 14 and the bus bar 36 are not in direct contact, and the main electrode 14 and the bus bar 36 are in indirect contact. Therefore, the contact area between the main electrode 14 and the bus bar 36 is not reduced, and the contact resistance or contact thermal resistance between the main electrode 14 and the bus bar 36 can be reduced.

[0087] Furthermore, when other structures exemplified in the present invention specification are appropriately added to the above-mentioned structures, that is, when other structures not mentioned as the above-mentioned structures in the present invention specification are appropriately added, the same effects can be produced.

[0088] According to the above-described embodiment, the housing 18A has a convex receiving portion 180 formed on the surface of the housing 18A so as to surround the main electrode 14 exposed from the housing 18A in a plan view. With such a structure, the conductive material 12 which has been melted or the like can be prevented from leaking from the upper surface of the main electrode 14 to the housing 18A (or even the housing 18A). Figure 2 Thus, the insulation performance between the main electrode 14 and the base plate 22 can be ensured.

[0089] In addition, according to the above-described embodiment, the semiconductor device includes the barrier layer 140, which surrounds the conductive material 12 when viewed from above and is provided on the surface of the main electrode 14 exposed from the housing 18 (or housing 18A). With such a structure, it is possible to prevent the conductive material 12 that has been melted from leaking from the upper surface of the main electrode 14 to the housing 18A (or even the housing 18A). Figure 2Thus, the insulation performance between the main electrode 14 and the base plate 22 can be ensured.

[0090] In addition, according to the above-described embodiment, the conductive material 12 has a thermal conductivity greater than or equal to 3 [W / m·K]. According to such a structure, the conductive material 12 has a high thermal conductivity, so that the heat generated inside the module can be efficiently conducted to the bus bar 36. Therefore, the temperature rise of the main electrode 14 or the inside of the module can be suppressed.

[0091] In addition, according to the above-described embodiment, the conductive material 12 has the property of being in a solid state at a temperature of 45° C. or less and softening or liquefying at a temperature exceeding 45° C. According to such a structure, since the conductive material 12 is solid at room temperature, it is suppressed that the conductive material 12 is peeled off from the semiconductor device during transportation. In addition, when the semiconductor device is operating, the conductive material 12 softens and the degree of close contact with the bus bar 36 becomes good, so that the heat conduction or electrical conductivity can be improved.

[0092] In addition, according to the above-described embodiment, the semiconductor chip 30 is formed of a wide bandgap semiconductor. According to such a structure, the accuracy of overcurrent protection can be improved and the size of the module can be reduced.

[0093] In addition, according to the above-described embodiment, the power conversion device includes: a conversion circuit 2201 that includes the above-described semiconductor device and converts input power and outputs it; and a control circuit 2203 that outputs a control signal for controlling the conversion circuit 2201 to the conversion circuit 2201. According to such a structure, the contact area between the main electrode 14 and the bus bar 36 is not reduced, and the contact resistance or contact thermal resistance between the main electrode 14 and the bus bar 36 can be reduced.

[0094] <Regarding Modifications of the Multiple Embodiments Described Above>

[0095] In the multiple embodiments described above, the material, size, shape, relative configuration relationship or implementation conditions of each structural element are sometimes described, but these are just examples in all aspects and are not restrictive.

[0096] Therefore, numerous variations and equivalents that are not shown in the examples can be envisioned within the scope of the technology disclosed in the present specification, including the case where at least one structural element is deformed, added, or omitted, and the case where at least one structural element in at least one embodiment is extracted and combined with structural elements in other embodiments.

[0097] In at least one embodiment described above, when a material name or the like is not particularly specified, the material includes other additives such as alloys, as long as no contradiction occurs.

[0098] Furthermore, when the above-described embodiment states that “one” component is included, the component may be included “one or more” unless a contradiction occurs.

[0099] Moreover, each structural element in the embodiments described above is a conceptual unit, and within the scope of the technology disclosed in the present invention specification, it includes a situation where one structural element is composed of multiple structures, a situation where one structural element corresponds to a part of a certain structure, and even a situation where multiple structural elements are equipped in one structure.

[0100] In addition, each component in the above-described embodiment may include a structure having another structure or shape as long as it exhibits the same function.

[0101] In addition, the descriptions in the present specification are referenced for all purposes related to the present technology, and none of them is admitted to be prior art.

[0102] The aspects of the present invention are summarized below as supplementary notes.

[0103] (Note 1)

[0104] A semiconductor device comprising:

[0105] Semiconductor chips;

[0106] A housing that contains the semiconductor chip;

[0107] a main electrode electrically connected to the semiconductor chip via a wire, and a portion of the main electrode is exposed to the outside from the housing; and

[0108] a conductive material applied to the surface of the main electrode exposed from the housing,

[0109] The surface of the main electrode is a surface connected to a bus bar.

[0110] (Note 2)

[0111] The semiconductor device according to Supplementary Note 1, wherein:

[0112] A convex receiving portion is formed on the surface of the case so as to surround the main electrode exposed from the case in a plan view.

[0113] (Note 3)

[0114] The semiconductor device according to Supplement 1 or 2, wherein:

[0115] A barrier layer is further provided, the barrier layer surrounding the conductive material in a plan view and being provided on a surface of the main electrode exposed from the case.

[0116] (Note 4)

[0117] A semiconductor device according to any one of Supplementary Notes 1 to 3, wherein:

[0118] The conductive material has a thermal conductivity greater than or equal to 3 [W / m·K].

[0119] (Note 5)

[0120] A semiconductor device according to any one of Supplementary Notes 1 to 4, wherein:

[0121] The conductive material has the property of being in a solid state at a temperature of 45° C. or less and softening or liquefying at a temperature exceeding 45° C.

[0122] (Note 6)

[0123] A semiconductor device according to any one of Supplementary Notes 1 to 5, wherein:

[0124] The semiconductor chip is composed of a wide bandgap semiconductor.

[0125] (Note 7)

[0126] A power conversion device, comprising:

[0127] A conversion circuit comprising at least one semiconductor device according to any one of Supplementary Notes 1 to 6, wherein the conversion circuit converts input power and outputs the converted power; and

[0128] A control circuit outputs a control signal for controlling the conversion circuit to the conversion circuit.

[0129] Description of the label

[0130] 12 conductive material, 14 main electrode, 16 nut, 18 shell, 18A shell, 20 opening, 22 base plate, 24A bonding material, 24B bonding material, 24C bonding material, 26 insulating layer, 28 copper pattern, 30 semiconductor chip, 32 packaging resin, 34 wire, 36 bus bar, 37 opening, 38 screw, 140 barrier layer, 180 receiving part, 2100 power supply, 2200 power conversion device, 2201 conversion circuit, 2203 control circuit, 2300 load.

Claims

1. A semiconductor device comprising: Semiconductor chips; A housing that contains the semiconductor chip; a main electrode electrically connected to the semiconductor chip via a wire, and a portion of the main electrode is exposed to the outside from the housing; and a conductive material applied to the surface of the main electrode exposed from the housing, The surface of the main electrode is a surface connected to a bus bar.

2. The semiconductor device according to claim 1, wherein A convex receiving portion is formed on the surface of the case so as to surround the main electrode exposed from the case in a plan view.

3. The semiconductor device according to claim 1 or 2, wherein: A barrier layer is further provided, the barrier layer surrounding the conductive material in a plan view and being provided on a surface of the main electrode exposed from the case.

4. The semiconductor device according to any one of claims 1 to 3, wherein: The conductive material has a thermal conductivity greater than or equal to 3 [W / m·K].

5. The semiconductor device according to any one of claims 1 to 4, wherein: The conductive material has the property of being in a solid state at a temperature of 45° C. or less and softening or liquefying at a temperature exceeding 45° C.

6. The semiconductor device according to any one of claims 1 to 5, wherein: The semiconductor chip is composed of a wide bandgap semiconductor.

7. A power conversion device, comprising: A conversion circuit comprising at least one semiconductor device according to any one of claims 1 to 6, wherein the conversion circuit converts input power and outputs the converted power; and A control circuit outputs a control signal for controlling the conversion circuit to the conversion circuit.

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