Wafer drying device

Abstract

The invention provides a wafer drying device. The wafer drying device comprises a bearing platform used for bearing a wafer; the metal heating element is positioned in the bearing platform; the magnet platform and the bearing platform are arranged at intervals in the height direction, a plurality of permanent magnets are arranged in the magnet platform, and the magnetic poles of every two adjacent permanent magnets are opposite; and the first rotating shaft is used for driving the bearing platform or the magnet platform to rotate. According to the invention, the first rotating shaft drives the bearing platform or the magnet platform to rotate, so that the metal heating element generates heat energy, and the heat energy is transmitted to the wafer on the bearing platform, thereby accelerating the drying and hardening of the protective liquid on the wafer, improving the productivity, and avoiding the abnormal residual of the protective liquid.

Description

Technical Field

[0001] The invention relates to the technical field of wafer preparation, in particular to a wafer drying device. Background Art

[0002] Before laser processing the wafer, a layer of protective liquid needs to be applied on the wafer for protection, and laser processing can be performed after the protective liquid dries. However, the protective liquid of some wafer products requires a long coating and drying time, and liquid residue may appear if the protective liquid is not evenly coated.

[0003] In view of this, it is necessary to provide a wafer drying device to solve the above technical problems. Summary of the invention

[0004] In order to achieve the above-mentioned purpose, the present invention provides a wafer drying device, which includes a carrying platform for carrying wafers; a metal heating element located in the carrying platform; a magnet platform, the magnet platform and the carrying platform are arranged at intervals along the height direction, a plurality of permanent magnets are arranged in the magnet platform, and the magnetic poles of two adjacent permanent magnets are opposite; and a first rotating shaft for driving the carrying platform or the magnet platform to rotate.

[0005] As a further improvement of the present invention, the bearing platform is circular, the metal heating element is annular, and a plurality of the metal heating elements are arranged at intervals along the radial direction of the bearing platform.

[0006] As a further improvement of the present invention, the distance between two adjacent metal heating elements is the same; or, the distance between two adjacent metal heating elements gradually decreases in the direction from the center of the supporting platform to the outside.

[0007] As a further improvement of the present invention, the distances between the metal heating element and the magnet platform are different.

[0008] As a further improvement of the present invention, the number of magnetic flux lines passing through any of the metal heating elements is the same; or, the number of magnetic flux lines passing through the metal heating elements gradually increases in a direction outward from the center of the carrying platform;

[0009] As a further improvement of the present invention, the magnet platform and the permanent magnet are circular, a plurality of the permanent magnets are arranged at equal intervals along the circumference of the magnet platform, and the centers of all the permanent magnets are in the same circle.

[0010] As a further improvement of the present invention, the first rotating shaft is used to drive the bearing platform to rotate, and the distance between the center of the magnet platform and the center of the permanent magnet is greater than half of the radius of the magnet platform.

[0011] As a further improvement of the present invention, the distance between the bearing platform and the magnet platform is equal to the radius of the permanent magnet.

[0012] As a further improvement of the present invention, the first rotating shaft is used to drive the carrying platform to rotate, a through hole for the first rotating shaft to pass through is set at the center of the magnet platform, and the wafer drying device also includes a lifting member for driving the magnet platform to move axially along the first rotating shaft.

[0013] As a further improvement of the present invention, it also includes a second rotating shaft for driving the magnet platform to rotate, and the first rotating shaft is sleeved in the second rotating shaft.

[0014] Beneficial effects of the present invention: The present invention drives the supporting platform or the magnet platform to rotate through the first rotating shaft, so that the metal heating element generates heat energy and transfers the heat to the wafer on the supporting platform, thereby accelerating the drying of the protective liquid on the wafer, improving production capacity, and avoiding abnormal residue of protective liquid. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0016] Figure 1 It is a schematic diagram of the overall structure of an embodiment of a wafer drying device of the present invention;

[0017] Figure 2 for Figure 1 A cross-sectional view of the wafer drying apparatus shown;

[0018] Figure 3 It is a schematic diagram of the overall structure of another embodiment of the wafer drying device of the present invention;

[0019] Figure 4 It is a schematic diagram of the arrangement of metal heating elements along the radial direction of the bearing platform;

[0020] Figure 5 It is another schematic diagram of the arrangement of the metal heating elements along the radial direction of the bearing platform;

[0021] Figure 6 It is another schematic diagram of the arrangement of the metal heating elements along the radial direction of the bearing platform;

[0022] Figure 7 A schematic diagram of the arrangement of permanent magnets in the magnet platform;

[0023] Figure 8 is another schematic diagram of the arrangement of permanent magnets in the magnet platform;

[0024] Fig. 9It is a schematic diagram of the arrangement of metal heating elements along the height direction;

[0025] Fig.10 Another schematic diagram of the arrangement of metal heating elements along the height direction;

[0026] Fig.11 Another schematic diagram of the arrangement of metal heating elements along the height direction. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0028] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0029] In the description of the present invention, it is necessary to understand that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0030] In the description of the present invention, unless otherwise specified and limited, it should be noted that the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a mechanical connection or an electrical connection, or it can be the internal connection between two components. It can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to the specific circumstances.

[0031] like Figures 1 to 11 As shown, the wafer drying device provided by the present invention includes a carrying platform 100, a metal heating element 200, a magnet platform 300 and a first rotating shaft 400.

[0032] The carrying platform 100 is used to carry the wafer A coated with the protective liquid. The metal heating element 200 is located inside the carrying platform 100. The magnet platform 300 is spaced apart from the carrying platform 100 in the height direction, and the magnet platform 300 generates a magnetic field. The carrying platform 100 or the magnet platform 300 is driven to rotate by the first rotating shaft 400, so that the metal heating element 200 generates heat energy and transfers the heat to the wafer A on the carrying platform 100, thereby accelerating the drying of the protective liquid on the wafer A, improving the production capacity, and avoiding abnormal residue of the protective liquid.

[0033] Specifically, the carrying platform 100 is circular to match the shape of the wafer A. The carrying platform 100 is a vacuum platform with a vacuum adsorption port on the top to adsorb and fix the wafer A placed on the carrying platform 100. The carrying platform 100 also has good thermal conductivity, so that the heat energy generated by the metal heating element 200 can be transferred to the wafer A.

[0034] The outer edge of the carrying platform 100 is provided with a baffle 101. It is understandable that if the first rotating shaft 400 drives the carrying platform 100 to rotate, the protective liquid on the wafer A may be thrown away under the action of centrifugal force. By providing the baffle 101 on the outer edge of the carrying platform 100, the protective liquid can be effectively prevented from flowing to the bottom of the carrying platform 100, thereby preventing the protective liquid from contaminating the carrying platform 100.

[0035] It should be noted that, when the magnet platform 300 is located below the carrier platform 100, the baffle 101 is vertically arranged, extending from the carrier platform 100 to the magnet platform 300, and the height of the baffle 101 is greater than the distance between the carrier platform 100 and the magnet platform 300. In this way, the baffle 101 can also effectively prevent the protective liquid from flowing onto the magnet platform 300, thereby preventing the protective liquid from contaminating the magnet platform 300.

[0036] The carrying platform 100 is also provided with a temperature sensor for monitoring the temperature of the carrying platform 100. The rotation speed of the first rotating shaft 400 can be adjusted according to the temperature of the carrying platform 100 to keep the temperature of the carrying platform 100 within a preset range. The faster / slower the rotation speed of the first rotating shaft 400, the greater / smaller the heat energy generated by the metal heating element 200.

[0037] The metal heating element 200 is in a circular shape to match the shape of the carrying platform 100 and the wafer A. By setting the metal heating element 200 in a circular shape, on the one hand, the amount of heat energy generated by the metal heating element 200 can be increased, and on the other hand, the contact area between the metal heating element 200 and the carrying platform 100 can be increased, and at the same time, the temperature balance in the annular area corresponding to the carrying platform 100 and the metal heating element 200 can be ensured.

[0038] Several metal heating elements 200 are arranged at intervals along the radial direction of the carrier platform 100. Several metal heating elements 200 are arranged concentrically and coincide with the center of the circle of the carrier platform 100. By means of several metal heating elements 200 arranged at intervals along the radial direction of the carrier platform 100, the entire wafer A can be heated, thereby accelerating the drying of the protective liquid on the wafer A, improving the production capacity, and avoiding abnormal residual protective liquid due to low local temperature of the wafer A.

[0039] In this embodiment, the cross-sectional diameter of the metal heating element 200 is 2 cm. Different numbers of the metal heating elements 200 are adapted for wafers of different sizes. Taking an 8-inch wafer product as an example, the number of the metal heating elements 200 is 3; taking a 12-inch wafer product as an example, the number of the metal heating elements 200 is 5. The metal heating element 200 is made of copper, which is cheap and has good heat generation. Of course, in other embodiments, the metal heating element 200 may also be made of other metals.

[0040] The temperature sensors can be arranged one-to-one corresponding to the plurality of metal heating elements 200 , that is, the temperature of different positions of the carrier platform 100 along the radial direction can be monitored by multiple groups of temperature sensors to maintain the temperature balance of the carrier platform 100 or increase / decrease the local temperature of the carrier platform 100 .

[0041] The magnet platform 300 is circular to match the shape of the carrying platform 100. A plurality of permanent magnets 301 are arranged in the magnet platform 300, and the magnetic poles of two adjacent permanent magnets 301 are opposite. The number of the permanent magnets 301 is an even number, and a magnetic field is formed by the permanent magnets 301 in the magnet platform 300.

[0042] When the first rotating shaft 400 drives the carrying platform 100 or the magnet platform 300 to rotate, the metal heating element 200 in the carrying platform 100 rotates relative to the permanent magnet 301 in the magnet platform 300, and the metal heating element 200 cuts the magnetic lines of force in the magnetic field to generate eddy currents, thereby causing the metal heating element 200 to generate heat energy under the action of the eddy currents. The heat generated by the metal heating element 200 is transferred to the wafer A through the carrying platform 100, thereby accelerating the drying of the protective liquid on the wafer A.

[0043] The permanent magnets 301 are circular in shape, and a plurality of the permanent magnets 301 are arranged at equal intervals along the circumference of the magnet platform 300 , and the centers of all the permanent magnets 301 are in the same circle.

[0044] The magnetic poles of two adjacent permanent magnets 301 are opposite, and the center angles between two adjacent permanent magnets 301 are equal, that is, the permanent magnets 301 are arranged at equal intervals, and the centers of all the permanent magnets 301 are in the same circle. In this way, the magnetic flux lines in the formed magnetic field can evenly pass through the annular metal heating element 200, thereby ensuring the temperature balance of the metal heating element 200, and then ensuring the temperature balance in the annular area corresponding to the carrier platform 100 and the metal heating element 200, avoiding abnormal residual protective liquid due to low local temperature of wafer A.

[0045] In this embodiment, the diameter of the permanent magnet 301 is 5 cm, and the height of the permanent magnet 301 is 1.8 cm. Different numbers of the permanent magnets 301 are adapted for wafers of different sizes. Taking an 8-inch wafer product as an example, the number of the permanent magnets 301 is 6; taking a 12-inch wafer product as an example, the number of the permanent magnets 301 is 8.

[0046] The magnet platform 300 is located below the carrier platform 100. The wafer drying device further includes a lifting member 500 for driving the magnet platform 300 to move in a height direction. The lifting member 500 can be used to adjust the distance between the carrier platform 100 and the magnet platform 300.

[0047] When it is not necessary to dry-cure the wafer A on the carrying platform 100, the magnet platform 300 is moved away from the carrying platform 100 by the lifting member 500, that is, the magnet platform 300 is moved downward, so that the metal heating element 200 in the carrying platform 100 leaves the magnetic field formed by the permanent magnet 301. At this time, the carrying platform 100 or the magnet platform 300 rotates, and the metal heating element 200 does not generate heat energy.

[0048] When the wafer A on the carrying platform 100 needs to be dried, the magnet platform 300 is moved toward the carrying platform 100 by the lifting member 500, that is, the magnet platform 300 is moved upward, so that the metal heating element 200 in the carrying platform 100 enters the magnetic field formed by the permanent magnet 301. At this time, the carrying platform 100 or the magnet platform 300 rotates, and the metal heating element 200 generates heat energy.

[0049] By adjusting the distance between the carrying platform 100 and the magnet platform 300 through the lifting member 500, on the one hand, the metal heating element 200 can be allowed to leave or enter the magnetic field formed by the permanent magnet 301; on the other hand, the number of magnetic lines of force in the magnetic field passing through the metal heating element 200 can be adjusted, thereby adjusting the heat energy generated by the metal heating element 200, and further controlling the temperature of the carrying platform 100.

[0050] In the process of moving the magnet platform 300 toward the carrier platform 100, the number of magnetic flux lines in the magnetic field formed by the permanent magnet 301 passing through the metal heating element 200 first gradually increases and then gradually decreases. When the distance between the carrier platform 100 and the magnet platform 300 is equal to the radius of the permanent magnet 301, the number of magnetic flux lines passing through the metal heating element 200 is the largest.

[0051] It is understandable that the heat energy generated by the metal heating element 200 and the temperature of the carrying platform 100 can be controlled by controlling the rotation speed of the first rotating shaft 400 or by adjusting the distance between the carrying platform 100 and the magnet platform 300 .

[0052] It should be particularly noted that, for the solution where the distance between the carrying platform 100 and the magnet platform 300 is not adjustable, in order to ensure that the number of magnetic lines of force in the magnetic field passing through the metal heating element 200 is the largest, thereby maximizing the amount of heat energy generated by the metal heating element 200, the distance between the carrying platform 100 and the magnet platform 300 is equal to the radius of the permanent magnet 301.

[0053] The wafer drying device further includes a coating member 700 for coating the protective liquid onto the wafer A. In this embodiment, the wafer drying device is located in a box, and the coating member 700 is located on the side wall of the box. The coating member 700 rotates to gently spit the protective liquid onto the wafer A. The coating member 700 may be a robotic arm.

[0054] In one embodiment, the first rotating shaft 400 is used to drive the carrying platform 100 to rotate.

[0055] In this embodiment, the top of the first rotating shaft 400 is connected to the bottom of the carrying platform 100, and the carrying platform 100 can rotate relative to the magnet platform 300 under the drive of the first rotating shaft 400. The magnet platform 300 is non-rotatable, and a through hole 302 is provided at the center of the magnet platform 300 for the first rotating shaft 400 to pass through, that is, the first rotating shaft 400 is connected to the carrying platform 100 through the through hole 302. The lifting member 500 drives the magnet platform 300 to move along the axial direction of the first rotating shaft 400.

[0056] It is understandable that, by driving the carrying platform 100 and the wafer A thereon to rotate through the first rotating shaft 400, under the action of centrifugal force, the thickness of the protective liquid at the outer edge of the wafer A will be greater than the thickness of the protective liquid at the center of the wafer A. In view of this, it is necessary to keep the temperature at the outer edge of the wafer A greater than the temperature at the center of the wafer A, so as to improve the drying efficiency of the protective liquid and avoid abnormal residual protective liquid.

[0057] Reference Figure 5 In a specific embodiment, the distance between two adjacent metal heating elements 200 gradually decreases from the center of the carrying platform 100 to the outside.

[0058] In this embodiment, three metal heating elements 200 are arranged at intervals along the radial direction of the carrying platform 100, which are the first metal heating element, the second metal heating element, and the third metal heating element from the inside to the outside. The distance between the first metal heating element and the second metal heating element is L1, and the distance between the second metal heating element and the third metal heating element is L2, and L1>L2.

[0059] In this way, the metal heating elements 200 located at the outer edge of the carrying platform 100 are more densely packed, so that the temperature at the outer edge of the carrying platform 100 is higher, thereby ensuring that the protective liquids of different thicknesses on the wafer A can dry at the same time.

[0060] Reference Figure 7 and Figure 8 In another specific embodiment, the distance between the center of the magnet platform 300 and the center of the permanent magnet 301 is greater than half of the radius of the magnet platform 300.

[0061] In this embodiment, the distance between the center of the magnet platform 300 and the center of the permanent magnet 301 is R1, the radius of the magnet platform 300 is R2, and R1>R2 / 2. The permanent magnet 301 is arranged close to the outer edge of the magnet platform 300, so that the density of the magnetic flux lines at the outer edge of the carrying platform 100 is greater than the density of the magnetic flux lines at the center of the carrying platform 100, that is, more magnetic flux lines pass through the metal heating element 200 located outside the carrying platform 100.

[0062] In this way, the metal heating element 200 located at the outer edge of the carrying platform 100 generates more heat energy, thereby making the temperature at the outer edge of the carrying platform 100 higher, thereby ensuring that protective liquids of different thicknesses on the wafer A can dry at the same time.

[0063] In this embodiment, the distance between two adjacent metal heating elements 200 can be equal, or can refer to Figure 5 The metal heating element 200 is set.

[0064] Reference Fig.10 and Fig.11 In another specific embodiment, the distance between the metal heating element 200 and the magnet platform 300 is different.

[0065] In this embodiment, by arranging the metal heating element 200 at different heights within the carrying platform 100, the metal heating element 200 located at the outer edge of the carrying platform 100 is penetrated by more magnetic lines of flux than the metal heating element 200 located at the center of the carrying platform 100.

[0066] In this way, the metal heating element 200 located at the outer edge of the carrying platform 100 generates more heat energy, thereby making the temperature at the outer edge of the carrying platform 100 higher, thereby ensuring that protective liquids of different thicknesses on the wafer A can dry at the same time.

[0067] Specifically, refer to Fig.10 , from the center of the carrying platform 100 to the outside, the distance between the metal heating element 200 and the magnet platform 300 gradually increases. Fig.11 , from the center of the carrying platform 100 to the outside, the distance between the metal heating element 200 and the magnet platform 300 gradually decreases.

[0068] In another embodiment, the first rotating shaft 400 is used to drive the magnet platform 300 to rotate.

[0069] In this embodiment, the top of the first rotating shaft 400 is connected to the bottom of the magnet platform 300, and the magnet platform 300 can rotate relative to the carrying platform 100 driven by the first rotating shaft 400. The carrying platform 100 is non-rotatable.

[0070] By keeping the carrying platform 100 stationary, splashing of the protective liquid on the wafer A due to the centrifugal force caused by the rotation of the carrying platform 100 can be avoided, and at the same time, the protective liquid on the wafer A can be prevented from having a large thickness difference at different positions.

[0071] In this embodiment, it is necessary to maintain the overall temperature balance of wafer A. The distance between the carrier platform 100 and the magnet platform 300 can be adjusted to keep the number of magnetic flux lines generated by the permanent magnet 301 passing through each of the metal heating elements 200 the same as much as possible, thereby ensuring the temperature balance of the carrier platform 100 and wafer A.

[0072] It should be noted that, since the distance between the carrier platform 100 and the magnet platform 300 will affect the number of magnetic lines of force passing through the metal heating element 200, the number of magnetic lines of force passing through the metal heating element 200 described in this application is based on the situation where the distance between the carrier platform 100 and the magnet platform 300 is the radius of the permanent magnet 301.

[0073] In another embodiment, the first rotating shaft 400 is used to drive the carrying platform 100 to rotate, and the wafer drying device further includes a second rotating shaft 600 for driving the magnet platform 300 to rotate.

[0074] In this embodiment, the first rotating shaft 400 drives the carrying platform 100 to rotate, and the second rotating shaft 600 drives the magnet platform 300 to rotate. The first rotating shaft 400 is sleeved in the second rotating shaft 600. The second rotating shaft 600 is a hollow rotating shaft, and a through hole 302 is provided at the center of the magnet platform 300. The first rotating shaft 400 passes through the second rotating shaft 600 and the through hole 302 to connect to the carrying platform 100.

[0075] The supporting platform 100 and the magnet platform 300 are driven to rotate respectively by two rotating shafts. Thus, when the protective liquid on the drying crystal circle A, the first rotating shaft 400 and the second rotating shaft 600 rotate in opposite directions, thereby speeding up the drying efficiency of the protective liquid and avoiding splashing of the protective liquid caused by the excessive rotation speed of the supporting platform 100.

[0076] As for the configuration of the metal heating element 200, specific reference may be made to the two aforementioned embodiments, which will not be described in detail here.

[0077] To summarize, the present invention drives the supporting platform 100 or the magnet platform 300 to rotate through the first rotating shaft 400, so that the metal heating element 200 generates heat energy and transfers the heat to the wafer A on the supporting platform 100, thereby accelerating the drying of the protective liquid on the wafer A, improving the production capacity, and avoiding abnormal residue of the protective liquid.

[0078] It should be understood that although the present specification is described according to embodiments, not every embodiment contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0079] The series of detailed descriptions listed above are only specific descriptions of feasible embodiments of the present invention and are not intended to limit the scope of protection of the present invention. All equivalent embodiments or changes that do not deviate from the technical spirit of the present invention should be included in the scope of protection of the present invention.

Claims

1. A wafer drying device, characterized in that: include: A carrying platform (100) for carrying a wafer; A metal heating element (200) located inside the carrying platform (100); A magnet platform (300), wherein the magnet platform (300) and the carrying platform (100) are arranged at intervals in the height direction, and a plurality of permanent magnets (301) are arranged in the magnet platform (300), and the magnetic poles of two adjacent permanent magnets (301) are opposite; A first rotating shaft (400) is used for driving the carrying platform (100) or the magnet platform (300) to rotate.

2. The wafer drying device according to claim 1, characterized in that: The carrying platform (100) is circular, the metal heating element (200) is annular, and a plurality of the metal heating elements (200) are arranged at intervals in the radial direction of the carrying platform (100).

3. The wafer drying device according to claim 2, characterized in that: The distance between two adjacent metal heating elements (200) is the same; Alternatively, the distance between two adjacent metal heating elements (200) gradually decreases in a direction outward from the center of the carrying platform (100).

4. The wafer drying device according to claim 2, characterized in that: The distances between a plurality of the metal heating elements (200) and the magnet platform (300) are different.

5. The wafer drying device according to claim 4, characterized in that: The number of magnetic flux lines passing through any of the metal heating elements (200) is the same; Alternatively, the number of magnetic flux lines passing through the metal heating element (200) gradually increases in a direction outward from the center of the supporting platform (100).

6. The wafer drying device according to any one of claims 1 to 5, characterized in that: The magnet platform (300) and the permanent magnet (301) are circular, a plurality of the permanent magnets (301) are arranged at equal intervals along the circumference of the magnet platform (300), and the centers of all the permanent magnets (301) are in the same circle.

7. The wafer drying device according to claim 6, characterized in that: The first rotating shaft (400) is used to drive the carrying platform (100) to rotate, and the distance between the center of the magnet platform (300) and the center of the permanent magnet (301) is greater than half the radius of the magnet platform (300).

8. The wafer drying device according to claim 6, characterized in that: The distance between the carrying platform (100) and the magnet platform (300) is equal to the radius of the permanent magnet (301).

9. The wafer drying device according to claim 1, characterized in that: The first rotating shaft (400) is used to drive the supporting platform (100) to rotate, and a through hole (302) for the first rotating shaft (400) to pass through is arranged at the center of the magnet platform (300). The wafer drying device also includes a lifting member (500) for driving the magnet platform (300) to move axially along the first rotating shaft (400).

10. The wafer drying device according to claim 9, characterized in that: It also includes a second rotating shaft (600) for driving the magnet platform (300) to rotate, and the first rotating shaft (400) is sleeved inside the second rotating shaft (600).

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