Wafer recovery control method and device and wafer recovery equipment

Abstract

The invention discloses a wafer recovery control method and device and wafer recovery equipment, the wafer recovery control method adopts a high-precision visual positioning and laser high-temperature melting mode, precious metal on pins can be accurately removed, and the reliability and consistency of ultrafast laser processing are good. The wafer and the pins on the wafer do not need to be contacted in the machining process, damage to the wafer in the operation process can be prevented, and the yield is improved. And through cooperation of visual positioning and a machining platform, continuous automatic production can be carried out according to requirements, and the efficiency is improved under the condition that the quality is guaranteed.

Description

Technical Field

[0001] The present application relates to the field of chip recycling technology, and in particular to a chip recycling control method, device and chip recycling equipment. Background Art

[0002] With the continuous advancement of technology, various electronic products have exploded in popularity. As an important component of electronic products, the number of chips is also increasing. Therefore, chip recycling is becoming more and more important. Recycling chips can not only reduce pollution to the environment, but also reuse the rare resources in the chips, which can save raw materials and create profits. There are two main ways to recycle chips. One is to extract the precious metals in the chips through replacement reaction; the other is to take out the chips, that is, first remove the gold wire residue on the pins of the chips, and then reprocess the chips. At present, the only way to remove the gold wire residue is to use pure manual work, that is, when the CCD magnifies the chip, use tools such as blades to scrape off the excess gold wire at the pin position. This method has a slow processing efficiency, and the chip product is very small, and there are tiny circuits all over the chip, and the blade is easy to scratch the product. Summary of the invention

[0003] The present application proposes a chip recovery control method, device and chip recovery equipment, which can improve the removal efficiency of precious metals on the chip.

[0004] The present application proposes a wafer recycling control method, comprising the following steps:

[0005] Obtain the image information of the chip;

[0006] Adjust the focal length of the laser processing device so that the focal point is at the height where the pins of the wafer are located;

[0007] Visually locate the wafer on the processing platform and obtain the position and angle information of the wafer;

[0008] Generate a processing program based on the position information, angle information and image information of the wafer;

[0009] The laser processing device is controlled to execute the processing program and remove the precious metal on the pins of the wafer.

[0010] In some embodiments, after removing the precious metal on the pins of the wafer, the method further includes the following steps:

[0011] Acquiring image information of the processed wafer;

[0012] Analyze and obtain processing quality information based on image information;

[0013] Based on the processing quality information, the drawing information is controlled.

[0014] In some embodiments, visually positioning the wafer on the processing platform and obtaining the position information and angle information of the wafer includes the following steps:

[0015] Grab the coordinates of the four right-angle points of the wafer and record them as (X1, Y1), (X2, Y2), (X3, Y3), (X4, Y4);

[0016] According to the formula θ=arctan[(Y2-Y1) / (X2-X1)], the value of the deflection angle θ is obtained;

[0017] According to the formula X0 = (X1 + X2 + X3 + X4) / 4, Y0 = (Y1 + Y2 + Y3 + Y4), obtain the coordinates of the center point O (X0, Y0).

[0018] In some embodiments, generating a processing program based on the position information, angle information, and image information of the wafer includes the following steps:

[0019] The marking image is positionally offset and angle-deflected according to the coordinate value of the center O and the deflection angle θ.

[0020] In some embodiments, the processing program includes laser processing parameters, and the laser processing parameters include:

[0021] Marking speed: 400~1000mm / s; Jump speed: 1000~2000mm / s; Q frequency: 500~1000KHz; Filling spacing: 0.005~0.02mm; Focus position: positive focus.

[0022] The present application also proposes a wafer recovery control device, comprising:

[0023] A graphics generation module, used to obtain graphics information of the wafer;

[0024] A focusing module is used to adjust the focal length of the laser beam so that the focal point is at the height of the pins of the wafer;

[0025] A visual positioning module is used to visually position the wafer on the processing platform and obtain the position information and angle information of the wafer;

[0026] A program generation module, used to generate a processing program based on the position information, angle information and image information of the wafer;

[0027] The processing control module is used to control the laser processing device to execute the processing program and remove the precious metal on the pins of the chip.

[0028] In some embodiments, the wafer recycling control device further comprises:

[0029] An image acquisition module, used to acquire image information of the processed wafer;

[0030] The quality analysis module is used to analyze and obtain processing quality information based on image information;

[0031] The control module is used to control the drawing information based on the processing quality information.

[0032] In some embodiments, the visual positioning module further includes:

[0033] A coordinate grabbing unit is used to grab the coordinates of the four right-angle points of the wafer and record them as (X1, Y1), (X2, Y2), (X3, Y3), (X4, Y4);

[0034] The coordinate calculation module is used to obtain the value of the deflection angle θ according to the formula θ=arctan[(Y2-Y1) / (X2-X1)]; it is also used to obtain the coordinates (X0, Y0) of the center point O according to the formula X0=(X1+X2+X3+X4) / 4, Y0=(Y1+Y2+Y3+Y4).

[0035] In some embodiments, the program generation module is further used to perform position offset and angle deflection on the marking image file according to the coordinate value of the center O and the deflection angle θ.

[0036] The present application also proposes a chip recycling device, comprising the above-mentioned chip recycling control device, and a laser processing device connected to the chip recycling control device.

[0037] In some embodiments, the wafer recycling apparatus further comprises:

[0038] A cleaning mechanism, used to clean the surface of the wafer and remove impurities on the wafer;

[0039] The collecting mechanism is used to remove the metal dust on the surface of the wafer and collect the metal dust generated by processing.

[0040] The beneficial effects of the embodiments of the chip recovery control method, device and chip recovery equipment in the present application are as follows: The chip recovery control method adopts high-precision visual positioning and laser high-temperature melting to accurately remove precious metals on the pins, and the reliability and consistency of ultrafast laser processing are good. The processing process does not need to contact the chip and the pins on the chip, which can prevent damage to the chip during operation and improve the yield rate. By cooperating with visual positioning and processing platforms, continuous automated production can also be carried out as needed, improving efficiency while ensuring quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 This is a flow chart of a wafer recycling control method in one embodiment of the present application;

[0042] Figure 2 Schematic diagram of the structure of a chip in one embodiment of the present application.

[0043] Description of labels:

[0044] 10. Chip; 11. Pin; 12. Gold wire.

[0045] The purpose, features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0046] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the scheme in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments in the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0047] It should be noted that when an element is referred to as being "fixed on" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element at the same time. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0048] In addition, the descriptions of "first", "second", etc. in this application are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in this field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0049] This application proposes a wafer recycling control method, referring to Figure 1 and Figure 2 , the wafer recycling control method comprises the following steps:

[0050] S20, obtain the image file information of the chip; in this step, the chip 10 can be installed on the processing platform, and the bottom of the processing platform is provided with a high-precision screw that can move horizontally, which can be moved with high precision. A fixture is provided on the processing platform, and a limiting cavity for placing the chip 10 is provided on the fixture. The chip 10 is placed in the limiting cavity and exposes the upper surface to be processed. The pins 11 of the chip 10 are located on the above-mentioned upper surface. In addition, a negative pressure air path connected to the limiting cavity can be provided in the fixture, and the chip 10 can be fixed by constructing a negative pressure in the limiting cavity.

[0051] After the wafer 10 is installed and fixed, its image file can automatically capture the outer contour line and the first contour line of the pin according to the image captured by the visual camera, or it can be captured through the drawing model of the wafer 10. Under a specific viewing angle, the outer contour line of the wafer 10 and the first contour line of the pin are captured under the top view viewing angle.

[0052] S30, adjust the focal length of the laser processing device so that the focus is at the height of the pin 11 of the wafer 10; in this step, the focus is adjusted by changing the position of some lenses in the laser light path. Of course, the laser head can also be driven to move by some lifting mechanism so that the focus falls on the height of the pin 11, so as to facilitate subsequent laser processing.

[0053] S40, visually locate the wafer on the processing platform and obtain the position information and angle information of the wafer; in this embodiment, after the wafer 10 is fixedly installed on the processing platform, the processing platform can move the wafer 10 as a whole, so that the wafer 10 to be processed is located directly above the visual camera, and obtain the position information (coordinates of the wafer 10 on the table) and angle information (angle offset of the edge of the wafer 10 relative to the four sides of the table) of the wafer 10 through the image captured by the visual camera and the movement parameters of the processing platform. The high-precision visual camera used in this step can achieve a positioning accuracy of + / -5um.

[0054] S50, based on the position information, angle information and image information of the wafer, generate a processing program; after obtaining the above information, the image information can be fitted with the image information of the wafer to be processed, and based on the position information and angle information, the coordinate information of the first contour line of the pin can be obtained, which is then converted into processing path information. Based on the processing path information, the movement parameters of the processing platform during the processing process, or the movement parameters of the upper laser head, can be obtained. Then the motor speed, steering and time-related parameters of the corresponding drive device can be obtained. In addition, the processing parameters of the laser are also part of the processing program, and the corresponding power and frequency can be set according to the characteristics such as the melting point of the gold wire 12 to be processed.

[0055] S60, control the laser processing device to execute the processing program, and remove the precious metal on the pin 11 of the chip. The above processing program is called and executed by the corresponding control board, which can specifically control the rotation of the parameters set by the above motor installation to control the laser head to produce relative movement relative to the chip 10 along the above processing path. At the same time, the laser is controlled to output a focused laser beam to the precious metal on the pin according to the set processing parameters. The laser beam can melt the above precious metal to form smaller metal dust, which can achieve the effect of contactless removal. In this step, a UV picosecond laser with a wavelength of 355nm is used, the maximum power of the laser is 8W, and the laser processing range is 50mm*50mm. The working principle of this process is that the laser acts on the gold layer, generating a thermal effect to vaporize the gold layer, thereby achieving the removal effect.

[0056] The method in the embodiment of the present application uses high-precision visual positioning and laser high-temperature melting to accurately remove precious metals on the pins, and the reliability and consistency of ultrafast laser processing are good. The processing process does not need to contact the wafer 10 and the pins 11 on the wafer 10, which can prevent damage to the wafer 10 during operation and improve the yield rate. By coordinating visual positioning and processing platforms, continuous automated production can also be carried out as needed, improving efficiency while ensuring quality.

[0057] After executing the above step S50, the wafer recycling control method further includes the following steps:

[0058] Obtain image information of the processed wafer 10; in this step, the image of the processed wafer 10 can be obtained by taking a visual camera, and the image information of the stitch area in the image, that is, the second contour line information, can be captured.

[0059] According to the image information, the processing quality information is analyzed and obtained; the processing quality information can be obtained by comparing the image information of the stitch area with the image file information. Specifically, the second contour line is compared with the first contour line, and the degree of fit between the two is calculated. If the degree of fit between the two is higher than the set value, such as 90%, it means that the processing quality is better. Of course, the above-mentioned set value is not limited to 90%, and higher or lower quality requirements can also be set according to processing requirements. The position information of the stitches with a degree of fit lower than the set value is marked.

[0060] Based on the processing quality information, the drawing information is controlled. Due to positioning errors or deflection errors of the galvanometer in the laser head, or errors in the drawing itself, the fit is low. Of course, in addition to analyzing the fit of the individual first contour lines and the second contour lines, the overall fit must also be considered. There may be certain errors in the scaling ratio, resulting in overall deviations. At this time, it is also necessary to control the scaling ratio of the drawing information to a certain extent. Specifically, the scaling ratio is adjusted, that is, the scaling ratio of the drawing information, the scaling ratio of the first contour line, or the relative position of the first contour line to the outer contour line is adjusted. Using the controlled drawing information can make the above-mentioned fit higher and further improve the processing accuracy.

[0061] In the above step S40, the coordinates of the four right-angle points of the wafer can also be captured and recorded as (X1, Y1), (X2, Y2), (X3, Y3), (X4, Y4); then according to the formula θ=arctan[(Y2-Y1) / (X2-X1)], the value of the deflection angle θ is obtained; according to the formula X0=(X1+X2+X3+X4) / 4, Y0=(Y1+Y2+Y3+Y4), the coordinates of the center point O (X0, Y0) are obtained. In the above step S50, the marking image can also be offset and deflected according to the coordinate value of the center O and the deflection angle θ.

[0062] In addition, the above processing procedure includes laser processing parameters, which include: marking speed: 400-1000mm / s; jump speed: 1000-2000mm / s; Q frequency: 500-1000KHz filling spacing: 0.005-0.02mm; focus position: positive focus. When the precious metal on the pin 11 is laser processed, the moving filling distance is set, and the focused laser spot can be applied to the area multiple times, and a large amount of energy can be concentratedly output in a short time, thereby accelerating the melting efficiency of the precious metal.

[0063] The present application also proposes a wafer recovery control device, referring to Figure 1 and Figure 2 The chip recovery control device includes: a file generation module for obtaining the file information of the chip 10; a focusing module for adjusting the focal length of the laser processing device so that the focus is at the height of the pin 11 of the chip 10; a visual positioning module for visually positioning the chip 10 on the processing platform and obtaining the position information and angle information of the chip 10; a program generation module for generating a processing program based on the position information, angle information and file information of the chip 10; and a processing control module for controlling the laser processing device to execute the processing program and remove the precious metal on the pin 11 of the chip 10.

[0064] In this embodiment, the processing platform of the wafer recovery control device is arranged on the machine platform, the wafer 10 can be mounted on the processing platform, and a high-precision screw rod that moves horizontally is arranged at the bottom of the processing platform, which can be moved with high precision. A jig is arranged on the processing platform, and a limit cavity for placing the wafer 10 is arranged on the jig. The wafer 10 is placed in the limit cavity and exposes the upper surface to be processed, and the pin 11 of the wafer 10 is located on the above-mentioned upper surface. In addition, a negative pressure gas path connected to the limit cavity can be arranged in the jig, and the wafer 10 can be fixed by constructing a negative pressure in the limit cavity. A mounting frame is arranged above the processing platform, and the mounting frame is used to install a visual camera. The visual camera can be used to obtain image information of the wafer 10 for visual positioning. The image generation module can automatically capture the outer contour line and the first contour line of the pin according to the image captured by the visual camera, and can also capture it through the drawing model of the wafer 10. Under a specific viewing angle, the outer contour line of the wafer 10 and the first contour line of the pin are captured under the top view viewing angle. The focusing module achieves the purpose of focusing by changing the position of some lenses in the laser light path. Of course, the laser head can also be driven to move by some lifting mechanisms so that the focus falls on the height of the pin 11, so as to facilitate subsequent laser processing. After the wafer 10 is fixedly mounted on the processing platform, the processing platform can move the wafer 10 as a whole so that the wafer 10 to be processed is located directly above the visual camera, and through the image captured by the visual camera and the movement parameters of the processing platform, the visual positioning module obtains the position information of the wafer 10 (the coordinates of the wafer 10 on the table) and the angle information (the angle offset of the edge of the wafer 10 relative to the four sides of the table) according to the above image information.

[0065] The program generation module can fit the image information of the image file with the image information of the wafer to be processed, and obtain the coordinate information of the first contour line of the pin based on the position information and angle information, thereby converting it into processing path information. Based on the processing path information, the movement parameters of the processing platform during the processing process, or the movement parameters of the upper laser head, can be obtained. Then the motor speed, steering and time-related parameters of the corresponding drive device can be obtained. In addition, the processing parameters of the laser are also part of the processing program. The corresponding power and frequency can be set according to the characteristics such as the melting point of the precious metal to be processed.

[0066] Compared with the traditional method of removing the gold wire 12 residue on the pin 11, the chip recovery device in the embodiment of the present application uses high-precision visual positioning and laser high-temperature melting to accurately remove the precious metal on the pin, and the reliability and consistency of ultrafast laser processing are better. The processing process does not need to contact the chip 10 and the pins 11 on the chip 10, which can prevent damage to the chip 10 during operation and improve the yield rate. By cooperating with visual positioning and processing platforms, continuous automated production can also be carried out as needed, improving efficiency while ensuring quality.

[0067] In some embodiments, reference Figure 1 and Figure 2 , the chip recovery control device also includes: an image acquisition module for acquiring image information of the processed chip 10; a quality analysis module for analyzing and acquiring processing quality information based on the image information; a management and control module for managing and controlling the image information based on the processing quality information. In this embodiment, the image acquisition module can be the above-mentioned visual camera. The quality analysis module can compare the image information of the above-mentioned stitch area with the image information. Specifically, the second contour information is compared with the first contour information, and the degree of fit of the two is calculated. If the degree of fit of the two is higher than the set value such as 90%, it means that the processing quality is better. Of course, the above-mentioned set value is not limited to 90%, and higher or lower quality requirements can also be set according to processing requirements. The position information of the stitches whose degree of fit is lower than the set value is marked.

[0068] Due to positioning errors or deflection errors of the galvanometer in the laser head, or errors in the image itself, the degree of fit is low. Of course, in addition to analyzing the degree of fit of the individual first contour lines and the second contour lines, the overall degree of fit must also be considered. There may be certain errors in the scaling ratio, resulting in overall deviations. At this time, it is also necessary to control the scaling ratio of the image information. The control module is used to adjust the scaling ratio, that is, to adjust the scaling ratio of the image information, the scaling ratio of the first contour line, or the relative position of the first contour line and the outer contour line. Using the controlled image information can make the above-mentioned degree of fit higher and further improve the processing accuracy.

[0069] In some embodiments, reference Figure 1 and Figure 2, the visual positioning module also includes: a coordinate capture unit for capturing the coordinates of the four right-angle points of the chip, recorded as (X1, Y1), (X2, Y2), (X3, Y3), (X4, Y4); a coordinate calculation module for obtaining the value of the deflection angle θ according to the formula θ=arctan[(Y2-Y1) / (X2-X1)]; and for obtaining the coordinates (X0, Y0) of the center point O according to the formula X0=(X1+X2+X3+X4) / 4, Y0=(Y1+Y2+Y3+Y4). The program generation module is also used to perform position offset and angle deflection on the marking image according to the coordinate value of the center O and the deflection angle θ, so that the image overlaps with the chip. Based on the coordinate information of the pins in the image, the processing sequence is set and the processing path information is generated. Based on the processing path information, the movement parameters of the processing platform during the processing process or the movement parameters of the upper laser head can be obtained. Then the motor speed, steering and time-related parameters of the corresponding drive device are obtained. In addition, the processing parameters of the laser are also part of the processing procedure. The corresponding power and frequency can be set according to the characteristics such as the melting point of the precious metal to be processed.

[0070] The present application also proposes a wafer recycling device, which includes the above-mentioned chip recycling control device and a laser processing device connected to the chip recycling control device. The chip recycling control device can control the laser processing device to perform laser processing on the wafer based on the processing program generated by it.

[0071] In some embodiments, the wafer recovery control device also includes: a cleaning mechanism for cleaning the wafer surface and removing impurities on the wafer; and a collecting mechanism for removing metal dust on the wafer surface and collecting metal dust generated by processing.

[0072] In this embodiment, the cleaning mechanism includes a first mesh box and a cleaning agent providing component. The first mesh box is used to hold the wafer 10. The cleaning agent providing component can provide an organic solvent to the first mesh box to rinse the wafer 10. The cleaning mechanism also includes a second mesh box and a deionized water providing component. The wafer 10 after the first cleaning is transferred to the second mesh box, and then the deionized water providing component rinses the wafer 10 for a second time. The first cleaning can use an organic solvent to dissolve the oil stains or residual plastic packaging on the chip surface to ensure that the surface of the wafer 10 remains clean and will not affect the subsequent visual positioning and quality analysis steps. Of course, after the first cleaning, deionized water can be used to clean the chip surface for a second time to further improve the cleanliness of the chip.

[0073] In this embodiment, the collection mechanism includes a blowing assembly and a collecting assembly. The air nozzle of the blowing assembly is arranged obliquely downward and can be used to blow away the metal dust on the wafer 10. The collecting assembly includes an air suction member arranged on the side of the machine table, and a filter assembly and a negative pressure generator connected to the air suction member in sequence. The filter assembly can be a filter. The filter is connected to the air suction member through a pipeline. The dust collected by the negative pressure is collected in the filter. The collected metal dust can be reused by removing the filter element in the filter later.

[0074] The wafer recovery equipment in the embodiment of the present application uses high-precision visual positioning and laser high-temperature melting to accurately remove precious metals on the pins, and the reliability and consistency of ultrafast laser processing are good. The processing process does not need to contact the wafer and the pins 11 on the wafer 10, which can prevent damage to the wafer 10 during operation and improve the yield rate. By cooperating with visual positioning and processing platforms, continuous automated production can also be carried out as needed, improving efficiency while ensuring quality.

[0075] The functional units in the embodiments of the present application may all be integrated into one processing unit, or each unit may be a separate unit, or two or more units may be integrated into one unit; the above-mentioned integrated units may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0076] Those skilled in the art can understand that all or part of the steps of the above method embodiments can be completed by hardware related to program instructions, and the aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps of the above method embodiments; and the aforementioned storage medium includes: mobile storage devices, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disks or optical disks and other media that can store program codes. Alternatively, if the above-mentioned integrated unit of the present application is implemented in the form of a software function module and sold or used as an independent product, it can also be stored in a computer-readable storage medium.

[0077] Based on the above, which are only partial or preferred embodiments of the present application, neither the text nor the drawings can limit the scope of protection of the present application. All equivalent structural changes made using the contents of the present application specification and drawings under the overall concept of the present application, or direct / indirect application in other related technical fields are included in the scope of protection of the present application.

Claims

1. A wafer recovery control method, characterized in that: The following steps are involved: Obtain the image information of the chip; Adjust the focal length of the laser processing device so that the focal point is at the height where the pins of the wafer are located; Visually locate the wafer on the processing platform and obtain the position and angle information of the wafer; Generate a processing program based on the position information, angle information and image information of the wafer; The laser processing device is controlled to execute the processing program and remove the precious metal on the pins of the wafer.

2. The wafer recovery control method according to claim 1, characterized in that: After removing the precious metal on the pins of the wafer, the method further comprises the following steps: Acquiring image information of the processed wafer; Analyze and obtain processing quality information based on image information; Based on the processing quality information, the drawing information is controlled.

3. The wafer recovery control method according to claim 2, characterized in that: The method of visually positioning the wafer on the processing platform and obtaining the position information and angle information of the wafer comprises the following steps: Grab the coordinates of the four right-angle points of the wafer and record them as (X1, Y1), (X2, Y2), (X3, Y3), (X4, Y4); According to the formula θ=arctan[(Y2-Y1) / (X2-X1)], the value of the deflection angle θ is obtained; According to the formula X0 = (X1 + X2 + X3 + X4) / 4, Y0 = (Y1 + Y2 + Y3 + Y4), obtain the coordinates of the center point O (X0, Y0).

4. The wafer recovery control method according to claim 3, characterized in that: The process of generating a processing program based on the position information, angle information and image information of the wafer includes the following steps: The marking image is positionally offset and angle-deflected according to the coordinate value of the center O and the deflection angle θ.

5. The wafer recovery control method according to claim 1, characterized in that: The processing program includes laser processing parameters, and the laser processing parameters include: Marking speed: 400~1000mm / s; Jump speed: 1000~2000mm / s; Q frequency: 500~1000KHz; Filling spacing: 0.005~0.02mm; Focus position: positive focus.

6. A wafer recovery control device, characterized in that: include: A graphics generation module, used to obtain graphics information of the wafer; A focusing module is used to adjust the focal length of the laser beam so that the focal point is at the height of the pins of the wafer; A visual positioning module is used to visually position the wafer on the processing platform and obtain the position information and angle information of the wafer; A program generation module, used to generate a processing program based on the position information, angle information and image information of the wafer; The processing control module is used to control the laser processing device to execute the processing program and remove the precious metal on the pins of the chip.

7. The wafer recovery control device according to claim 6, characterized in that: The wafer recovery control device also includes: An image acquisition module, used to acquire image information of the processed wafer; The quality analysis module is used to analyze and obtain processing quality information based on image information; The control module is used to control the drawing information based on the processing quality information.

8. The wafer recovery control device according to claim 7, characterized in that: The visual positioning module also includes: A coordinate grabbing unit is used to grab the coordinates of the four right-angle points of the wafer and record them as (X1, Y1), (X2, Y2), (X3, Y3), (X4, Y4); The coordinate calculation module is used to obtain the value of the deflection angle θ according to the formula θ=arctan[(Y2-Y1) / (X2-X1)]; it is also used to obtain the coordinates (X0, Y0) of the center point O according to the formula X0=(X1+X2+X3+X4) / 4, Y0=(Y1+Y2+Y3+Y4).

9. The wafer recovery control device according to claim 8, characterized in that: The program generation module is also used to perform position offset and angle deflection on the marking image file according to the coordinate value of the center O and the deflection angle θ.

10. A wafer recycling device, characterized in that: The invention comprises the chip recovery control device according to any one of claims 6 to 9, and a laser processing device connected to the chip recovery control device.

11. The wafer recycling device according to claim 10, characterized in that: The wafer recycling equipment also includes: A cleaning mechanism, used to clean the surface of the wafer and remove impurities on the wafer; The collecting mechanism is used to remove the metal dust on the surface of the wafer and collect the metal dust generated by processing.

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